Power overlay package for semiconductor devices

Abstract

To provide a semiconductor device having a power overlay package.SOLUTION: A semiconductor assembly includes a semiconductor device and a POL-RDL package coupled to the device. The device includes a top surface, a gate pad, and at least one source pad disposed on the top surface. The POL-RDL package includes a dielectric layer having at least one source pad electrically coupled to the at least one source pad of the device and at least one contact pad disposed thereon. At least one trace connection having a resistivity value electrically couples the at least one source pad of the POL-RDL package to the at least one contact pad.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates generally to semiconductor devices, and more particularly to semiconductor devices having power overlay packages. [Background technology]

[0002] Power semiconductor assemblies include devices used as switches or rectifiers in power electronic circuits, such as switched mode power supplies. Power semiconductor devices are used in high voltage power applications to carry large amounts of current and support large voltages. In use, high voltage power semiconductor devices are connected to an external circuit by a power overlay ("POL") package and interconnect system.

[0003] In at least some known assemblies, a point-on-line package is layered over a semiconductor device. The semiconductor device includes at least one source pad and one gate pad disposed on a top surface of the semiconductor device. The point-on-line package includes at least one point-on-line interconnect layer configured as a routing layer. The at least one point-on-line interconnect layer is stacked with at least one dielectric layer (also referred to as an isolation film) deposited over the semiconductor device and metallization vias extending through the dielectric layer. The metallization vias electrically couple at least one source pad of the semiconductor device to the source pad disposed on the top surface of the dielectric layer, while the gate pad disposed on the top surface of the dielectric layer is coupled to the gate pad of the semiconductor device. Contact pads (e.g., Kelvin contacts) disposed on the top surface of the dielectric layer are electrically coupled to the source pads of the dielectric layer.

[0004] POL packages typically utilize connections to electrically couple source, contact, and gate pads on a dielectric layer to deliver power to the semiconductor device through metallization vias. To establish proper electrical connection, the source, contact, and gate pads on the dielectric layer require sufficient surface area to solder, sinter, copper bond, copper clip, or otherwise connect the source, contact, and gate pads to the connections. However, the surface area of ​​the source, contact, and gate pads is typically limited by the overall surface area of ​​the semiconductor device. Furthermore, without the POL package, direct soldering, sintering, copper bonding, and copper clipping to the source and gate pads on the semiconductor device introduces bonding stress onto the semiconductor device. The introduction of the source, contact, and gate pads on the dielectric layer of the POL package provides stress buffering and reduces stress on the semiconductor device.

[0005] Therefore, there is a need to improve the available surface of a POL package and reduce the bonding stress of the bond connections to the semiconductor device surface so that larger source, contact, and gate pads can be utilized without reducing the available active area of ​​the semiconductor device. Summary of the Invention [Means for solving the problem]

[0006] In one aspect, a semiconductor assembly is disclosed that includes a semiconductor device and a point-on-chip (POL) package coupled to the semiconductor device. The device includes an upper surface, a gate pad disposed on the upper surface, and at least one source pad disposed on the upper surface. The POL package includes a dielectric layer having an upper surface, at least one source pad disposed on the upper surface of the dielectric layer and electrically coupled to at least one of the source pads of the semiconductor device, at least one contact pad disposed on the upper surface of the dielectric layer, and at least one trace connection having a predetermined resistivity value and electrically coupling the at least one source pad of the POL package to the at least one contact pad.

[0007] In another aspect, a method of manufacturing a semiconductor assembly is disclosed, the method including coupling a dielectric layer of a POL-RDL package to an upper surface of a semiconductor device, the semiconductor device including at least one source pad and a gate pad disposed on the upper surface, forming the at least one source pad of the POL-RDL package on the upper surface of the dielectric layer, electrically coupling the at least one source pad of the POL-RDL package to the at least one source pad of the semiconductor device, forming a gate pad of the POL-RDL package on the upper surface of the dielectric layer, electrically coupling the gate pad of the POL-RDL package to the gate pad of the semiconductor device, forming at least one contact pad on the upper surface of the dielectric layer, and electrically coupling the at least one source pad of the POL-RDL package to the at least one contact pad using at least one trace connection having a predetermined resistivity value.

[0008] The subject matter of the present disclosure will be explained in more detail in the following text with reference to exemplary embodiments illustrated in the accompanying drawings. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a perspective view of a semiconductor assembly including a POL package disposed over a semiconductor device in accordance with one or more embodiments of the present disclosure. [Figure 2] FIG. 2 is an enlarged view of detail A of the semiconductor assembly of FIG. 1. [Figure 3] FIG. 2 is an exploded view of the semiconductor assembly of FIG. 1. [Figure 4] 2 is a cross-sectional view of the semiconductor assembly of FIG. 1 taken along line BB'. [Figure 5] FIG. 2 is a top view of the semiconductor assembly of FIG. 1. [Figure 6] FIG. 2 is a top view of one embodiment of the semiconductor assembly of FIG. 1. [Figure 7] 1 illustrates one embodiment of a method for manufacturing a semiconductor assembly. [Figure 8] FIG. 1 is a perspective view of an alternative embodiment of a semiconductor assembly. [Figure 9] 9 is a top view of the semiconductor assembly shown in FIG. 8, with the semiconductor device shown in dashed lines. [Figure 10] FIG. 1 is a perspective view of an alternative embodiment of a semiconductor assembly. [Figure 11] FIG. 1 is a perspective view of an alternative embodiment of a semiconductor assembly. DETAILED DESCRIPTION OF THE INVENTION

[0010] The reference signs used in the drawings and their meanings are listed in summary form in the list of reference signs. As a rule, identical parts are provided with the same reference signs in the figures.

[0011] In the following specification and claims, reference will be made to a number of terms that shall be defined to have the following meanings.

[0012] As used herein, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. The terms "comprising," "including," and "having" are intended to be inclusive, meaning that there may be additional elements other than the listed elements. The term "optional" or "optionally" means that the subsequently described event or circumstance may or may not occur, and that the description includes instances in which the event occurs and instances in which the event does not occur.

[0013] Unless otherwise indicated, approximation language (e.g., as used herein, "generally," "substantially," and "about," etc.) indicates that the term so modified may apply only to an approximate degree, as would be recognized by one of ordinary skill in the art, and not to an absolute or complete degree. Thus, a value modified by one or more terms (e.g., "about," "approximately," and "substantially," etc.) should not be limited to the exact value specified. In at least some instances, approximation language may correspond to the precision of an instrument for measuring the value. Here, and throughout the specification and claims, range limitations may be identified. Such ranges may be combined and / or interchangeable, and may include all subranges contained therein, unless the context or language indicates otherwise.

[0014] Additionally, unless otherwise indicated, terms such as "first," "second," etc. are used herein merely as labels and are not intended to impose any sequential, positional, or hierarchical requirements on the items to which they refer. Moreover, a reference to, for example, a "second" item does not require or preclude the presence of, for example, a "first" or lower-numbered item, or a "third" or higher-numbered item.

[0015] Embodiments of the present disclosure generally relate to structures and methods for packaging semiconductor devices, and more particularly, to semiconductor devices including overhanging point-of-load (POL) structures. The methods, systems, and apparatus described herein overcome at least some disadvantages of at least some known power semiconductor devices having POL packages. More specifically, the systems and apparatus described herein provide POL packages configured as a redistribution layer (RDL) positioned directly over the power semiconductor device. Accordingly, POL packages are also referred to herein as POL-RDL packages. POL-RDL packages include a larger surface area than is typically sized for semiconductor devices, which improves the available surface area for placement of source, gate, and contact pads on the top surface of the POL-RDL package. The improved available surface area enables the use of larger source, contact, and gate pads, which reduces bonding stress on the semiconductor device. Moreover, the improved available surface area enables the use of various trace configurations for the POL-RDL package.

[0016] A semiconductor assembly is disclosed that includes a semiconductor device and a POL-RDL package configured as a redistribution layer for the semiconductor device. The semiconductor device includes at least one source pad and one gate pad disposed on a die having a surface area and an outer peripheral edge. The POL-RDL package includes a dielectric layer and an adhesive layer in contact with the semiconductor device. At least one source pad, a gate pad, and at least one contact pad of the POL-RDL package are positioned on an upper surface of the dielectric layer. At least one source via path and a gate via path extend through the dielectric layer and the adhesive layer, and metallization vias are formed in the via paths, connecting the gate pad and the at least one source pad of the semiconductor device to the gate pad and the at least one source pad of the POL-RDL package, respectively. The POL-RDL package (and particularly the dielectric layer of the POL-RDL package) has an outer peripheral edge and a surface area that is larger than the surface area of ​​the semiconductor device, such that the outer peripheral edge of the dielectric layer extends beyond the outer peripheral edge of the semiconductor device to define an overhang region. The larger surface area of ​​the POL-RDL package increases the available surface area for the size and location of the gate pad, at least one source pad, and at least one contact pad of the POL-RDL package, which allows greater flexibility in the use of traces connecting the at least one source pad to the at least one contact pad of the POL-RDL package, as described herein.

[0017] Figure 1 illustrates a perspective view of an exemplary semiconductor assembly 100 in accordance with one or more embodiments of the present disclosure. Figure 2 illustrates an enlarged view of detail A of semiconductor assembly 100, Figure 3 illustrates an exploded view of semiconductor assembly 100, and Figure 4 illustrates a cross-sectional view of semiconductor assembly 100 taken along line B-B'.

[0018] As shown in FIGS. 1-4 , the semiconductor assembly 100 includes a POL-RDL package 150 disposed over a semiconductor device 102. As best shown in FIGS. 3 and 4 , the semiconductor device 102 includes a dielectric material 106 defining an upper surface 104. An outer peripheral edge 108 of the dielectric material 106 defines the surface area of ​​the semiconductor device 102. The semiconductor device 102 further includes at least one source pad 110 and a gate pad 120 disposed over the dielectric material 106. The at least one source pad 110 includes a top contact surface 112, and the gate pad 120 includes a top contact surface 122. The gate pad 120 and the at least one source pad 110 are spaced apart from one another over the dielectric material 106. As best shown in FIG. 3 , the gate pad 120 and the at least one source pad 110 are spaced apart from the outer peripheral edge 108 of the semiconductor device 102. In some embodiments, at least a portion of the gate pad 120 and the at least one source pad 110 extend below the upper surface 104. Furthermore, in some embodiments, the top contact surface 112 of the at least one source pad 110 and the top contact surface 122 of the gate pad 120 are coplanar. The at least one source pad 110 is electrically isolated from adjacent source pads 110 on the semiconductor device 102.

[0019] At least one source pad 110 of the semiconductor device 102 is used for electrical control and conversion. By way of example, the at least one source pad 110 can be configured to turn on and off power received from the gate pad 120 thousands of times per second. In embodiments including multiple source pads 110, the POL-RDL package 150 can provide bridging connections between the source pads 110. Unlike the semiconductor assemblies of the present disclosure, at least some known semiconductor devices include connections to external components on the surface of the semiconductor device or on the surface of the source pads, as well as bridging connections between the source pads. Such connections limit the available active surface area of ​​the semiconductor device and can induce greater bonding stress. As best shown in FIGS. 1-3 , the POL-RDL package 150 includes a dielectric layer 160 and an adhesive layer 162 positioned below the dielectric layer 160. The adhesive layer 162 includes a layer of dielectric material that adheres to the dielectric layer 160 and the semiconductor device 102. That is, adhesive layer 162 is positioned between dielectric layer 160 and semiconductor device 102. In some embodiments, dielectric layer 160 includes an adhesive material for directly adhering to semiconductor device 102 without the use of adhesive layer 162.

[0020] The POL-RDL package 150 is positioned above the semiconductor device 102, and the dielectric layer 160 is adhered to the semiconductor device 102 by an adhesive layer 162. In some embodiments, the dielectric layer 160 is in the form of a lamination or a film and can be formed from one of a number of dielectric materials (e.g., Kapton® polyimide, Ultem® polyetherimide, polytetrafluoroethylene (PTFE), Upilex®, polysulfone materials (e.g., Udel® polysulfone, Radel® polyphenolsulfone), silica (SiO2), hafnium silicate (HfSiO4), zirconium silicate (ZrSiO4), and barium titanate (BaTiO3), etc.) or another polymer film (e.g., a liquid crystal polymer (LCP) or a polyimide material, etc.). In one embodiment, the POL-RDL package 150 has a total thickness in the range of 25 microns to 300 microns.

[0021] At least one source pad 170, at least one contact pad 180, and a gate pad 190 are formed on the upper surface 161 of the dielectric layer 160. In this embodiment, the at least one contact pad 180 is electrically coupled to the at least one source pad 170 by a trace connection 172 extending between the at least one contact pad 180 and the at least one source pad 170. The trace connection 172 has a resistance value different from the resistance value of the at least one contact pad 180. In some embodiments, the trace connection 172 is made of a different material than the at least one contact pad 180 to achieve the different resistivity values. Additionally or alternatively, in some embodiments, the trace connection 172 has a width smaller than the width of the at least one contact pad 180 to achieve the different resistivity values. In some embodiments, the at least one contact pad 180 is a Kelvin gate contact.

[0022] At least one source via path 164 and one gate via path 166 extend through the dielectric layer 160 and the adhesive layer 162. As best shown in FIG. 4 , the POL-RDL package 150 also includes a metal interconnect structure 167, which extends through the at least one source via path 164 and one gate via path 166. The metal interconnect structure 167 electrically couples the top contact surface 112 of the at least one source pad 110 of the semiconductor device 102 to the at least one source pad 170 of the POL-RDL package 150, and similarly, electrically couples the top contact surface 122 of the gate pad 120 of the semiconductor device 102 to the gate pad 190 of the POL-RDL package 150.

[0023] In some embodiments, the metal interconnect structure 167 is formed by filling at least one of the source via path 164 and the gate via path 166 with a conductive material (i.e., conductive epoxy, paste, solder, etc.). In some embodiments, the metal interconnect structure 167 is formed during the deposition of at least one of the source pad 170 and the gate pad 190. As an example, when the at least one of the source pad 170 and the gate pad 190 is deposited, the at least one of the source via path 164 and the gate via path 166 is also filled. Thereafter, the at least one of the source pad 170 and the gate pad 190 is electroplated to a desired thickness.

[0024] At least one contact pad 180 is electrically coupled to at least one source pad 170, such that the gate pad 190 establishes an input-output (I / O) connection with the source pad 170 and / or the at least one contact pad 180. The input-output (I / O) connection enables connection of the semiconductor device 102 to an external circuit (e.g., a printed circuit board (PCB) or the like). In some embodiments, the electrical connection includes one or more of soldering, sintering, copper bonding, copper clipping, and the like. By way of example, as shown in FIG. 5 , an electrical lead 101 can be attached to the gate pad 190, the source pad 170, and the at least one contact pad 180. In such a configuration, the at least one contact pad 180 is a Kelvin contact. In some embodiments, a solder mask layer is applied over the at least one source pad 170 to provide a protective coating and define an interconnect pad 171 for attaching the electrical lead 101 to the at least one source pad 170. In alternative embodiments, the interconnect pads may have a metallic finish to aid solderability, such as Ni, Cu, Ni / Au, Cu / Ni / Au, Cu / Ni / Pd / Au, and the like.

[0025] To establish a proper connection, the at least one contact pad 180, the source pad 170, and the gate pad 190 must have a surface area sufficient to make the electrical connection. However, the surface area of ​​the at least one contact pad 180, the source pad 170, and the gate pad 190 is ultimately limited by the overall surface area of ​​the dielectric layer 160. By way of example, each of the at least one source pad 170, the at least one contact pad 180, and the gate pad 190 disposed on the dielectric layer 160 is positioned a predetermined distance from the outer peripheral edge 168 of the dielectric layer 160. Moreover, each of the at least one source pad 170, the at least one contact pad 180, and the gate pad 190 disposed on the dielectric layer 160 should be spaced sufficiently apart from one another to isolate the components and prevent electrical leakage.

[0026] 2, 4, and 5, the dielectric layer 160 has a surface area that is greater than the surface area of ​​the semiconductor device 102 such that an outer peripheral edge 168 of the dielectric layer 160 extends beyond the outer peripheral edge 108 of the semiconductor device 102 to define an overhang region 174. In some embodiments, the adhesive layer 162 extends to the outer peripheral edge 108 of the semiconductor device 102. In some embodiments, the adhesive layer 162 extends to the outer peripheral edge 168 of the dielectric layer 160. In some embodiments, the adhesive layer 162 extends partially to the outer peripheral edge 168 of the dielectric layer 160.

[0027] The overhang region 174 allows at least one of the contact pads 180, the source pad 170, and the gate pad 190 to have a larger surface area. Notably, in some embodiments, at least one of the contact pads 180, the source pad 170, and the gate pad 190 extends to the outer peripheral edge 108 of the semiconductor device 102, as shown in FIG. 4 . In some embodiments, at least one of the contact pads 180, the source pad 170, and the gate pad 190 extends into the overhang region 174, and thus at least one of the contact pads 180, the source pad 170, and the gate pad 190 extends beyond the outer peripheral edge 108 of the semiconductor device 102. As with the at least one contact pad 180, the overhang region 174 allows the source pad 170 and the gate pad 190 to have a larger surface area.

[0028] The POL-RDL package 150 described herein allows for redistribution of the at least one contact pad 180 and the gate pad 190 on the dielectric layer 160, allowing the at least one contact pad 180 and the gate pad 190 to have a larger surface area, facilitating easier and more robust connection to external circuitry. The POL-RDL package 150 also allows for an improved elastic modulus (Young's modulus) of the dielectric layer 160, which reduces bonding stress on the semiconductor device 102. The dielectric layer 160 of the POL-RDL package 150 can be polyimide, which has an elastic modulus of approximately 2.5 GPa, and the semiconductor device 102 (which can be SiO2) can have an elastic modulus of approximately 70 GPa. The lower elastic modulus can absorb bonding stress, thereby reducing bonding stress on the semiconductor device 102.

[0029] In at least some known semiconductor assemblies, the contact pads and gate pads in the POL package may be up to 0.6 mm apart without the benefit of overhang region 174. 2 Without the benefit of the additional surface area provided by the overhang region 174, a larger gate pad would necessarily reduce the area available for placement of source and contact pads within the semiconductor device 102, resulting in a lower current rating for the semiconductor device 102.

[0030] In contrast, in at least some of the embodiments described herein, the at least one contact pad 180 may be 0.5 mm thick, while still maintaining the current rating of the semiconductor device 102, given the benefit of the overhang region 174. 2 from 1.5 mm 2 In some embodiments, the surface area of ​​the contact pad 180 is in the range of 0.6 mm 2 Thus, the overhang region 174 of the POL-RDL package 150 allows for redistribution of the at least one contact pad 180 and the gate pad 190 while still maintaining the current rating of the semiconductor device 102. The source pad 170 and the gate pad 190, as well as the at least one contact pad 180, can have a larger surface area.

[0031] The overhang region 174 and larger surface area of ​​the POL-RDL package 150 also facilitate the use of a wide range of trace connections 172 having various resistivity values ​​(as shown in FIGS. 8-11 ). Using different types of trace configurations 172 allows for selectively adjusting the resistivity value between the source pad 110 and the at least one contact pad 180. In particular, the additional resistance between the at least one source pad 110 and the at least one contact pad 180 reduces crosstalk and therefore improves the efficiency of the semiconductor device 102. According to embodiments described herein, the resistance value between the at least one source pad 110 and the at least one contact pad 180 can be selectively adjusted for a particular application without modifying the semiconductor device 102 during fabrication and assembly. This allows for simplified fabrication of the base semiconductor device 102 with post-fabrication customization of the trace connections 172 according to specific customer and application needs.

[0032] For example, the resistivity value of the trace connection 172 can be changed by depositing the trace connection 172 with a material having a different resistivity, by modifying the width of the trace connection 172, and / or by modifying the deposition thickness of the trace connection 172. An exemplary trace connection 172 having a length of 2 mm, a width of 35 mm, and a thickness of 10 mm has a resistance of approximately 0.1 Ω. In some embodiments, the trace connection 172 has a thickness ranging from 5 to 25 mm and a trace width of approximately 25 mm. In some embodiments, the deposition depth of the trace connection 172 ranges from 50 nm to 50 μm. In some embodiments, the resistivity value of the trace connection 172 is adjusted or changed by changing the volume of the trace connection 172, by changing the cross-sectional area of ​​the trace connection 172, and / or by changing the material of the trace connection 172. In some embodiments, trace connection 172 is made from a combination of a first material having a first resistivity value and a second material having a second resistivity value, where the second material is laminated or otherwise layered on top of the first material. The resistivity value of trace connection 172 may be selectively adjustable within a range of 10 mΩ (microohms) to 100 mΩ. In some embodiments, trace connection 172 is a resistor. Further, in some embodiments, trace connection 172 is a surface-mount resistor.

[0033] 6, in some embodiments, at least one contact pad 180 and at least one source pad 170 include mounting pads 178. In such embodiments, the trace connections 172 are implemented as surface-mount resistors 176 coupled between the mounting pads 178. The resistors 176 can be connected to the semiconductor assembly 100 after fabrication.

[0034] FIG. 7 illustrates a method 200 for manufacturing a semiconductor assembly, such as semiconductor assembly 100 (shown in FIGS. 1-6 ). Method 200 includes step 202 of adhering a dielectric layer of a POL-RDL package to an upper surface of a semiconductor device in a panel format; step 204 of filling at least one source via path defined in the dielectric layer with at least one metallization via; and step 206 of depositing at least one source pad and at least one contact pad on the upper surface of the dielectric layer. In some embodiments, method 200 further includes depositing a trace connection having a predetermined resistivity value between the at least one source pad and the at least one contact pad. In some embodiments, method 200 further includes forming solder pads on the at least one source pad and at least one contact pad of the dielectric layer and soldering a resistor onto the solder pad.

[0035] In some embodiments, the trace connections are formed by sputtering or depositing a resistive material, such as tantalum nitride (TaN), between the at least one source pad and the at least one contact pad. In some embodiments, method 200 further includes step 208 of forming a copper connection to the top surface of the at least one contact pad to connect the semiconductor assembly to external circuitry. In some embodiments, the metallization vias are formed by a laser ablation or laser drilling process, plasma etching, photo-definition, and / or mechanical drilling or punching process. Additionally, a combination of pre- and post-drilled vias can be used.

[0036] In some embodiments, the metallization layer is formed through a combination of sputtering and electroplating applications, although it is recognized that other electroless methods of metal deposition can also be used. For example, a titanium adhesion layer and a copper seed layer can first be applied via a sputtering process, followed by an electroplating process that builds up the copper thickness to a desired level. The applied metal material is then subsequently patterned into metal interconnects, which have the desired shape and function as vertical feedthroughs formed through the dielectric and adhesive layers.

[0037] 8 and 9, additional alternative embodiments of configurations of at least one source pad, gate pad, and at least one contact pad on a POL-RDL package are illustrated. The semiconductor assembly shown in Figures 8 and 9 includes multiple components similar to those shown in semiconductor assembly 100 of Figure 1.

[0038] More specifically, FIG. 8 illustrates a perspective view of one embodiment of a semiconductor assembly 300 including a source pad 370, a contact pad 380, and a gate pad 390 positioned on a dielectric layer 360. FIG. 9 illustrates a top view of the semiconductor assembly 300, with the components of the semiconductor device 102 indicated by dashed lines. As shown in FIG. 8, the source pad 370 and the contact pad 380 are integral with one another, and there are no discrete trace connections extending between the source pad 370 and the contact pad 380. The gate pad 390 has a surface area that is larger than the surface area of ​​the gate pad 190 of FIG. 1. Moreover, in the illustrated embodiment, there is only one contact pad 380. As shown in FIG. 9, the gate pad 120 of the semiconductor device 102 is vertically aligned with a portion of the gate pad 390, and the source pad 110 of the semiconductor device 102 is vertically aligned with a portion of the source pad 370, facilitating connection between these components. In some embodiments, the source pad 370 , the contact pad 380 , and the gate pad 390 extend into the overhang region 174 .

[0039] 10 shows another embodiment of a semiconductor assembly 400 including a source pad 470, two contact pads 480, and a gate pad 490 positioned on a dielectric layer 460. The source pad 470 and the two contact pads 480 are integral, with no discrete trace connections extending between the source pad 470 and the two contact pads 480.

[0040] 11 illustrates another embodiment of a semiconductor assembly 500 including a source pad 570, a contact pad 580, and a gate pad 590 positioned on a dielectric layer 560. The source pad 570 and the contact pad 580 are integral, with no discrete trace connection extending between the source pad 570 and the contact pad 580. In this embodiment, a metallization via connects the gate pad of the semiconductor device to a gate contact 594 on the dielectric layer 560. The gate contact 594 is vertically aligned with the underlying gate pad. Additionally, a trace connection 592 connects the gate contact 594 to the gate pad 590. In some embodiments, the trace connection 592 has a resistivity value different from that of the gate pad 590. In some embodiments, the trace connection 592 is made of a different material than the gate pad 590. In some embodiments, the trace connection 592 has a width that is smaller than the width of the gate pad 590. Additionally, in these embodiments, any of the contact pads (380, 480, 580) can have a different surface finish than that of the source pads (370, 470, 570). By way of example, the configurations of the embodiments of Figures 8-11 are optimized for GENERAL ELECTRIC® semiconductor devices, however, the configurations may also be optimized for other semiconductor devices.

[0041] The above-described embodiments overcome at least some of the disadvantages of semiconductor devices. Specifically, the embodiments described herein facilitate redistribution of contact pads and gate pads above the dielectric layer, allowing the contact pads and gate pads to have a larger surface area for easier and more robust connection to external circuitry. Additionally, the POL-RDL packages described herein provide an improved elastic modulus of the dielectric layer, which reduces bonding stress on the semiconductor device. Additionally, the larger-than-normal size of the POL-RDL packages allows for redistribution of contact pads and gate pads while still maintaining the current rating of the semiconductor device.

[0042] Additionally, the larger surface area of ​​the POL-RDL packages described herein facilitates the use of various trace connections having different resistivity values. The resistivity values ​​of the trace configurations can be selectively adjusted to control the resistivity value between the source pad and the contact pad. The added resistance generally reduces crosstalk and therefore improves the efficiency of the semiconductor device.

[0043] The methods, systems, and compositions disclosed herein are not limited to the specific embodiments described herein; rather, method steps, system elements, and / or composition elements can be utilized independently and separately from other steps and / or elements described herein.

[0044] Although specific features of various embodiments may be shown in some drawings and not in others, this is for convenience only. Moreover, references to "one embodiment" in the above description are not intended to be interpreted as excluding the existence of additional embodiments that also incorporate the recited features. In accordance with the principles of the present disclosure, any feature of a drawing may be referenced and / or claimed in combination with any feature of any other drawing.

[0045] This written description uses examples, including the best mode, to enable any person skilled in the art to practice the present disclosure, including making and using any device or system, and performing any incorporated methods. The patentable scope of the disclosure is defined by the claims, and may include other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they contain equivalent structural elements that involve insubstantial differences from the literal language of the claims.

[0046] Further aspects of the present disclosure are provided by the subject matter of the following clauses.

[0047] 1. A semiconductor assembly comprising: a semiconductor device; and a POL-RDL package coupled to the semiconductor device, wherein the semiconductor device comprises an upper surface, a gate pad disposed on the upper surface, and at least one source pad disposed on the upper surface; and the POL-RDL package comprises: a dielectric layer including an upper surface; at least one source pad disposed on the upper surface of the dielectric layer and electrically coupled to at least one of the source pads of the semiconductor device; at least one contact pad disposed on the upper surface of the dielectric layer; and at least one trace connection having a predetermined resistivity value and electrically coupling at least one of the source pads of the POL-RDL package to at least one of the contact pads.

[0048] 10. The semiconductor assembly of any one of the preceding clauses, further comprising a gate pad disposed on the upper surface of the dielectric layer and electrically coupled to the gate pad of the semiconductor device.

[0049] 10. The semiconductor assembly of claim 1, wherein at least one of the trace connections has a width that is smaller than a width of at least one of the contact pads, and the width of the trace connection controls a resistivity value of the trace connection.

[0050] 10. The semiconductor assembly of claim 1, wherein at least one of the trace connections is made from a first material having a first resistivity value and at least one of the contact pads is made from a material having a second resistivity value, the first resistivity value being greater than the second resistivity value.

[0051] 10. The semiconductor assembly of any one of the preceding clauses, wherein the second material is layered over the first material.

[0052] 10. The semiconductor assembly of any one of the preceding clauses, further comprising at least one interconnect pad for attaching an electrical lead to said at least one source pad.

[0053] 10. The semiconductor assembly of any one of the preceding clauses, wherein at least one of the source pads and at least one of the contact pads of the POL-RDL package each comprises a mounting pad.

[0054] 10. The semiconductor assembly of any one of the preceding clauses, wherein at least one of the trace connections includes a resistor attached to the mounting pad by solder.

[0055] 10. The semiconductor assembly of claim 1, wherein the semiconductor device includes a first outer peripheral edge defining a first surface area, and the dielectric layer of the POL-RDL package includes a second outer peripheral edge defining a second surface area, the second surface area being greater than the first surface area, and the second outer peripheral edge extending beyond the first outer peripheral edge to define an overhang region.

[0056] 10. The semiconductor assembly of any one of the preceding clauses, wherein at least one of the contact pads extends to the first outer peripheral edge.

[0057] 10. The semiconductor assembly of any one of the preceding clauses, wherein at least one of the contact pads is at least partially disposed within the overhang region.

[0058] 10. The semiconductor assembly of any one of the preceding clauses, wherein the source pad of at least one of the POL-RDL packages extends to the first outer peripheral edge.

[0059] 10. The semiconductor assembly of any one of the preceding clauses, wherein the source pad of at least one of the POL-RDL packages is at least partially disposed within an overhang region.

[0060] 10. The semiconductor assembly of claim 1, wherein the POL-RDL package further includes a gate contact disposed on the dielectric layer and an additional trace connection electrically coupling the gate contact to the gate pad of the semiconductor device.

[0061] 1. A method for manufacturing a semiconductor assembly, the method comprising: coupling a dielectric layer of a POL-RDL package to an upper surface of a semiconductor device, the semiconductor device including at least one source pad and a gate pad disposed on the upper surface; forming at least one source pad of the POL-RDL package on the upper surface of the dielectric layer; electrically coupling the at least one source pad of the POL-RDL package to the at least one source pad of the semiconductor device; forming a gate pad of the POL-RDL package on the upper surface of the dielectric layer; electrically coupling the gate pad of the POL-RDL package to the gate pad of the semiconductor device; forming at least one contact pad on the upper surface of the dielectric layer; and electrically coupling the at least one source pad of the POL-RDL package to the at least one contact pad using at least one trace connection having a predetermined resistivity value.

[0062] 10. The method of any one of the preceding clauses, wherein the semiconductor device includes a first outer peripheral edge defining a first surface area, and the dielectric layer of the POL-RDL package includes a second outer peripheral edge defining a second surface area, the second surface area being greater than the first surface area, and the second outer peripheral edge extending beyond the first outer peripheral edge to form an overhang region.

[0063] 10. The method of any one of the preceding clauses, further comprising forming a mounting pad on the at least one source pad of the POL-RDL package and on the at least one contact pad of the dielectric layer.

[0064] 10. The method of any one of the preceding clauses, wherein electrically coupling at least one source pad of the POL-RDL package to at least one contact pad comprises soldering a resistor onto the mounting pad.

[0065] 10. The method of any one of the preceding clauses, wherein the resistor has a resistivity value in the range of 10 mΩ to 100 mΩ.

[0066] 10. The method of any one of the preceding clauses, wherein at least one trace connection has a width that is less than a width of the at least one contact pad, and the width of the trace connection controls a resistivity value of the trace connection. [Explanation of symbols]

[0067] 100 Semiconductor Assembly 101 Electrical leads 102 Semiconductor Devices 104 Upper surface 106 Dielectric Materials 108 outer peripheral edge 110 Sauce Pad 112 Upper contact surface 120 Gate Pad 122 Upper contact surface 150 POL-RDL Package 160 dielectric layer 161 upper surface 162 Adhesive layer 164 Source Via Path 166 Gate Via Path 167 Metallic Interconnect Structures 168 outer peripheral edge 170 Sauce Pad 171 interconnect pads 172 trace connections 174 Overhang Area 176 Resistor 178 Mounting Pad 180 contact pads 190 Gate Pad 300 Semiconductor Assembly 360 dielectric layer 370 Sauce Pad 380 contact pad 390 Gate Pad 400 Semiconductor Assembly 460 Dielectric Layer 470 Saucepad 480 contact pads 490 Gate Pad 500 Semiconductor Assembly 560 Dielectric Layer 570 Sauce Pad 580 Contact Pad 590 Gate Pad 592 trace connections 594 Gate Contact

Claims

1. A semiconductor assembly (100) comprising: a semiconductor device (102); a POL-RDL package (150) coupled to the semiconductor device (102); It is equipped with The semiconductor device (102) an upper surface (104); a gate pad (120) disposed on the upper surface (104); at least one source pad (110) disposed on the upper surface (104); Including, The POL-RDL package (150) a dielectric layer (160) including an upper surface (161); at least one source pad (170) disposed on the upper surface (161) of the dielectric layer (160) and electrically coupled to at least one source pad (110) of the semiconductor device (102); at least one contact pad (180) disposed on the upper surface (161) of the dielectric layer (160); at least one trace connection (172) having a predetermined resistivity value and electrically coupling at least one of the source pads (170) of the POL-RDL package (150) to at least one of the contact pads (180); Including, At least one of the trace connections (172) has a thickness that is less than a thickness of at least one of the contact pads (180).

2. 2. The semiconductor assembly of claim 1, further comprising a gate pad disposed on the upper surface of the dielectric layer and electrically coupled to the gate pad of the semiconductor device.

3. 2. The semiconductor assembly of claim 1, wherein at least one of the trace connections has a width that is less than a width of at least one of the contact pads, and wherein the width of the trace connection controls the resistivity value of the trace connection.

4. 10. The semiconductor assembly of claim 1, further comprising at least one interconnect pad (171) for attaching an electrical lead (101) to said at least one source pad (170).

5. 2. The semiconductor assembly of claim 1, wherein the at least one source pad (170) and the at least one contact pad (180) of the POL-RDL package (150) each include a mounting pad (178).

6. 2. The semiconductor assembly of claim 1, wherein at least one of the trace connections has a resistivity value in the range of 10 mΩ to 100 mΩ.

7. 2. The semiconductor assembly of claim 1, wherein the semiconductor device includes a first outer peripheral edge defining a first surface area, the dielectric layer of the POL-RDL package includes a second outer peripheral edge defining a second surface area, the second surface area being greater than the first surface area, and the second outer peripheral edge extending beyond the first outer peripheral edge and defining an overhang region.

8. 8. The semiconductor assembly of claim 7, wherein at least one of the contact pads (180) extends to the first outer peripheral edge (108).

9. 8. The semiconductor assembly of claim 7, wherein at least one of the contact pads (180) is at least partially disposed within the overhang region (174).

10. 10. The semiconductor assembly of claim 7, wherein at least one of the source pads (170) of the POL-RDL package (150) extends to the first outer peripheral edge (180).

11. 11. The semiconductor assembly of claim 7, wherein at least one of the source pads (170) of the POL-RDL package (150) is at least partially disposed within the overhang region (174).

12. The POL-RDL package (150) a gate contact (594) disposed on the dielectric layer (160); an additional trace connection (172) electrically coupling the gate contact (594) to the gate pad (120) of the semiconductor device (102); The semiconductor assembly of claim 1 further comprising:

13. A method for manufacturing a semiconductor assembly (100), comprising: coupling a dielectric layer (160) of a POL-RDL package (150) to an upper surface (104) of a semiconductor device (102), the semiconductor device (102) including at least one source pad (110) and gate pad (120) disposed on the upper surface (104); forming at least one source pad (170) of the POL-RDL package (150) on an upper surface (161) of the dielectric layer (160); electrically coupling at least one of the source pads (170) of the POL-RDL package (150) to at least one of the source pads (110) of the semiconductor device (102); forming a gate pad (190) of the POL-RDL package (150) on the upper surface (161) of the dielectric layer (160); electrically connecting the gate pad (190) of the POL-RDL package (150) to the gate pad (120) of the semiconductor device (102); forming at least one contact pad (180) on the upper surface (161) of the dielectric layer (160); electrically coupling at least one of the source pads (170) of the POL-RDL package (150) to at least one of the contact pads (180) using at least one trace connection (172) having a predetermined resistivity value; Including, The method, wherein at least one of the trace connections has a thickness that is less than a thickness of at least one of the contact pads.

14. 14. The method of claim 13, wherein the semiconductor device includes a first outer peripheral edge defining a first surface area, the dielectric layer of the POL-RDL package includes a second outer peripheral edge defining a second surface area, the second surface area being greater than the first surface area, and the second outer peripheral edge extending beyond the first outer peripheral edge to form an overhang region.

15. 15. The method of claim 14, further comprising forming a mounting pad (178) on at least one of the source pads (170) of the POL-RDL package (150) and on at least one of the contact pads (180) of the dielectric layer (160).

Images