Substrate support and plasma processing apparatus

Abstract

To provide a technique capable of efficiently coupling high frequency power to plasma.SOLUTION: The disclosed substrate support includes a base, an electrostatic chuck, and at least one terminal. The base is configured to receive radio-frequency power. The base is formed of a metal and provides at least one closed space therein. The electrostatic chuck has an electrode therein and is disposed on the base. The at least one terminal extends downward from the electrode of the electrostatic chuck and terminates within the at least one space of the base. The at least one terminal is spaced apart from the base to form a capacitor between the at least one terminal and the base.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a substrate support and a plasma processing apparatus. [Background technology]

[0002] A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support is disposed in the chamber. The substrate support includes a base and an electrostatic chuck. The electrostatic chuck is disposed on the base. The base receives high-frequency power from a high-frequency power supply. Patent Document 1 discloses such a plasma processing apparatus. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-72397 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that enables high frequency power input to a base of a substrate support to be efficiently coupled to plasma. [Means for solving the problem]

[0005] In one exemplary embodiment, a substrate support is provided. The substrate support includes a base, an electrostatic chuck, and at least one terminal. The base is configured to receive radio frequency power. The base is formed of metal and provides at least one enclosed space therein. The electrostatic chuck has an electrode therein and is disposed on the base. The at least one terminal extends downward from the electrode of the electrostatic chuck and terminates within the at least one space of the base. The at least one terminal is spaced from the base so as to form a capacitor between the at least one terminal and the base. [Effects of the Invention]

[0006] According to one exemplary embodiment, radio frequency power can be efficiently coupled into the plasma. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 2] FIG. 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. [Figure 3] 2 is an enlarged partial cross-sectional view of a substrate support according to an exemplary embodiment. [Figure 4] FIG. 10 is a plan view illustrating a layout of multiple terminals on a substrate support according to an exemplary embodiment. [Figure 5] FIG. 10 is an enlarged partial cross-sectional view of a substrate support according to another exemplary embodiment. [Figure 6] FIG. 10 is an enlarged partial cross-sectional view of a substrate support according to yet another exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] A substrate support according to an exemplary embodiment will be described below with reference to Figures 3 and 4. Figure 3 is a partially enlarged cross-sectional view of the substrate support according to an exemplary embodiment. Figure 4 is a plan view showing the layout of multiple terminals in the substrate support according to an exemplary embodiment. The substrate support 11 shown in Figures 3 and 4 can be used as the substrate support 11 of the plasma processing apparatus 1.

[0027] The substrate support 11 includes a base 1110 and an electrostatic chuck 1111. The base 1110 receives high-frequency power and is made of a metal such as aluminum. The high-frequency power is source high-frequency power (source RF signal) for plasma generation supplied from a high-frequency power supply and / or bias high-frequency power (bias RF signal) for ion attraction supplied from a bias power supply. At least one high-frequency power supply, such as a first RF generator 31a and / or a second RF generator 31b, is electrically connected to the base 1110. The first RF generator 31a is electrically connected to the base 1110 via a matcher 31am. The second RF generator 31b is electrically connected to the base 1110 via a matcher 31bm. A first DC generator 32a may be electrically connected to the base 1110.

[0028] The base 1110 provides therein at least one space 14. The at least one space 14 is a closed space. That is, the at least one space 14 does not open downward from the base 1110.

[0029] The electrostatic chuck 1111 is disposed on a base 1110. The electrostatic chuck 1111 includes an electrode 1111e disposed therein. The electrode 1111e may be an electrostatic electrode 1111b to which a DC voltage is applied for electrostatic attraction of the substrate W. In the example of FIG. 3, the electrode 1111e is the electrostatic electrode 1111b, and a DC power supply 51 for applying a DC voltage to the electrode 1111e is electrically connected to the electrode 1111e via a switch 51s.

[0030] Alternatively, the electrode 1111e may be a bias electrode to which an electric bias is applied. The electric bias may be the above-mentioned bias high-frequency power or a voltage pulse periodically applied to the bias electrode from the first DC generator 32a. Note that the electrode 1111e may be used as both the electrostatic electrode 1111b and the bias electrode.

[0031] The substrate support 11 includes at least one terminal 15. The at least one terminal 15 is formed from a conductive material such as metal. The at least one terminal 15 may be rod-shaped. The at least one terminal 15 is connected to the electrode 1111e, extends downward from the electrode 1111e, and terminates in the at least one space 14. The at least one terminal 15 is spaced apart from the base 1110 so as to form a capacitor (capacitive coupling) between the at least one terminal 15 and the base 1110. In one embodiment, the substrate support 11 may further include a dielectric member 16. The dielectric member 16 is disposed in the at least one space 14. The dielectric member 16 is interposed between the at least one terminal 15 and the base 1110. A gap between the at least one terminal 15 and a surface of the base 1110 that defines the at least one space 14 may be filled with the dielectric member 16.

[0032] As described above, at least one terminal 15 and the base 1110 form a capacitor (capacitive coupling). The capacitor is electrically connected between the base 1110 and the electrode 1111e. This capacitor reduces the impedance between the base 1110 and the electrode 1111e, making it possible to efficiently transmit the high-frequency power supplied to the base 1110 to the plasma above the substrate support 11. Furthermore, since the capacitor is formed within the base 1110, no extra space is required around the substrate support 11 for the capacitor.

[0033] As shown in FIG. 4 , at least one terminal 15 may extend on the axis AX, which is the central axis of the substrate support 11. In one embodiment, the at least one space 14 may include multiple spaces 14, and the at least one terminal 15 may include multiple terminals 15. Each of the multiple terminals 15 extends downward from the electrode 1111e, terminates in one of the multiple spaces 14, and is spaced apart from the base 1110. The multiple terminals 15 and the multiple spaces 14 may be arranged at equal intervals along the circumferential direction around the axis AX. Furthermore, one of the multiple terminals 15 and one of the multiple spaces 14 may extend on the axis AX. According to the example shown in FIG. 4 , multiple capacitors electrically connected between the electrode 1111e and the base 1110 can be distributed in the in-plane direction. This allows the impedance distribution in the in-plane direction to be adjusted. For example, it is possible to uniformize the impedance distribution in the in-plane direction within the substrate support 11. As a result, it is possible to uniformize the density distribution of the plasma generated above the substrate support 11.

[0034] It should be noted that a plurality of dielectric members 16 may be disposed in each of the plurality of spaces 14. Furthermore, a dielectric member 16 may not be disposed in one or more of the plurality of spaces 14. That is, one or more of the plurality of spaces 14 may be hollow. Furthermore, the dielectric material of each of the plurality of dielectric members 16 may be the same as each other. Furthermore, the dielectric material of each of the plurality of dielectric members 16 may be different from the dielectric material of at least one other dielectric member 16 among the plurality of dielectric members 16. The dielectric materials of each of the plurality of dielectric members 16 may be different from each other.

[0035] Reference will now be made to FIG. 5, which is a partially enlarged cross-sectional view of a substrate support according to another exemplary embodiment. The substrate support 11 shown in FIG. 5 can be used as the substrate support 11 of the plasma processing apparatus 1. The substrate support 11 shown in FIG. 5 will be described below in terms of differences from the substrate support 11 shown in each of FIGS. 3 and 4.

[0036] 5, at least one terminal 15 may include a common line 15c and multiple branch lines 15b. The common line 15c extends from the electrode 1111e. The multiple branch lines 15b branch off from the common line 15c and extend downward. Each of the multiple branch lines 15b may have a rod shape. Both the common line 15c and the multiple branch lines 15b are spaced apart from the base 1110.

[0037] At least one space 14 may include a common space 14c and multiple branch spaces 14b. The common line 15c extends within the common space 14c. The multiple branch lines 15b extend within the multiple branch spaces 14b, respectively. Each of the multiple branch lines 15b terminates within a corresponding branch space 14b.

[0038] 5, the plurality of branch lines 15b provide a plurality of capacitors (capacitive coupling) connected in parallel between the electrode 1111e and the base 1110. This further reduces the impedance between the electrode 1111e and the base 1110. This allows the high-frequency power supplied to the base 1110 to be transmitted to the plasma above the substrate support 11 more efficiently.

[0039] Reference will now be made to Figure 6. Figure 6 is a partially enlarged cross-sectional view of a substrate support according to yet another exemplary embodiment. The substrate support 11 shown in Figure 6 can be used as the substrate support 11 of the plasma processing apparatus 1. Below, the substrate support 11 shown in Figure 6 will be described from the perspective of differences from the substrate support 11 shown in each of Figures 3 to 5.

[0040] As shown in FIG. 6 , the base 1110 may include a base body 1110m and at least one lid 1110d. The base body 1110m provides at least one space 14 therein. The at least one lid 1110d is detachably attached to the base body 1110m so as to close the at least one space 14 from below. The at least one lid 1110d may be fixed to the base body 1110m using screws or bolts. A dielectric member 16 may be disposed in the at least one space 14. The dielectric member 16 may be removable from the base 1110 by removing the at least one lid 1110d.

[0041] Furthermore, the substrate support 11 may provide multiple spaces 14 within the base body 1110m, as in the example shown in FIG. 4 . In this case, the multiple spaces 14 are closed from below by multiple lids 1110d. Multiple dielectric members 16 may be disposed within the multiple spaces 14 so as to be removable from the base 1110. In this case, it is possible to not dispose a dielectric member 16 within at least one of the multiple spaces 14. Furthermore, by selecting the material of the dielectric members 16 disposed within each of the multiple spaces 14, it is possible to adjust the in-plane impedance distribution within the substrate support 11. For example, it is possible to uniformize the in-plane impedance distribution within the substrate support 11. As a result, it is possible to uniformize the density distribution of the plasma generated above the substrate support 11.

[0042] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0043] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E14] below.

[0044] [E1] a base for receiving high frequency power, the base being made of metal and providing at least one enclosed space therein; an electrostatic chuck having an electrode therein and disposed on the base; at least one terminal extending downward from the electrode and terminating within the at least one space, the at least one terminal being spaced apart from the base so as to form a capacitor between the at least one terminal and the base; A substrate support comprising:

[0045] [E2] The substrate support of E1, wherein the at least one space and the at least one terminal extend on a central axis of the substrate support.

[0046] [E3] the at least one space includes a plurality of spaces, the at least one terminal includes a plurality of terminals; the plurality of terminals extend from the electrode and terminate in the plurality of spaces, respectively, and are spaced apart from the base; the plurality of terminals and the plurality of spaces are arranged at equal intervals along a circumferential direction around a central axis of the substrate support; A substrate support according to E1 or E2.

[0047] [E4] The at least one terminal is a common line extending from the electrode; a plurality of branch lines branching from the common line; Including, The at least one space is a common space in which the common line is disposed; a plurality of branch spaces branching from the common space and in which the plurality of branch lines are respectively disposed; Including, A substrate support according to any one of E1 to E3.

[0048] [E5] The substrate support according to any one of E1 to E4, further comprising a dielectric member disposed in the at least one space.

[0049] [E6] the at least one space includes a plurality of enclosed spaces; the at least one terminal includes a plurality of terminals; The base is a base body that provides the plurality of spaces; At least one lid body that closes the plurality of spaces from below and is configured to be detachable from the base body; Including, the substrate support further includes a plurality of dielectric members removably disposed within the plurality of spaces. A substrate support according to E1.

[0050] [E7] a chamber; a substrate support disposed within the chamber; Equipped with The substrate support includes: a base for receiving high frequency power, the base being made of metal and providing at least one enclosed space therein; an electrostatic chuck having an electrode therein and disposed on the base; at least one terminal extending downward from the electrode and terminating within the at least one space, the at least one terminal being spaced apart from the base so as to form a capacitor between the at least one terminal and the base; Including, Plasma processing equipment.

[0051] [E8] The plasma processing apparatus of E7, wherein the at least one space and the at least one terminal extend on a central axis of the substrate support.

[0052] [E9] the at least one space includes a plurality of spaces, the at least one terminal includes a plurality of terminals; the plurality of terminals extend from the electrode and terminate in the plurality of spaces, respectively, and are spaced apart from the base; the plurality of terminals and the plurality of spaces are arranged at equal intervals along a circumferential direction around a central axis of the substrate support; The plasma processing apparatus according to E7 or E8.

[0053] [E10] The at least one terminal is a common line extending from the electrode; a plurality of branch lines branching from the common line; Including, The at least one space is a common space in which the common line is disposed; a plurality of branch spaces branching from the common space and in which the plurality of branch lines are respectively disposed; Including, The plasma processing apparatus according to any one of E7 to E9.

[0054] [E11] The plasma processing apparatus according to any one of E7 to E10, wherein the substrate support further includes a dielectric member disposed in the at least one space.

[0055] [E12] the at least one space includes a plurality of enclosed spaces; the at least one terminal includes a plurality of terminals; The base is a base body that provides the plurality of spaces; At least one lid body that closes the plurality of spaces from below and is configured to be detachable from the base body; Including, the substrate support further includes a plurality of dielectric members removably disposed within the plurality of spaces. The plasma processing apparatus according to E7.

[0056] [E13] The plasma processing apparatus according to any one of E7 to E12, further comprising a high frequency power supply electrically connected to the base.

[0057] [E14] The plasma processing apparatus according to any one of E7 to E13, further comprising a DC power supply electrically connected to the electrode to apply a voltage to the electrode to generate an electrostatic attraction force between the substrate on the electrostatic chuck and the electrostatic chuck.

[0058] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0059] 1...plasma processing apparatus, 10...plasma processing chamber, 11...substrate support, 1110...base, 1111...electrostatic chuck, 1111e...electrode, 14...space, 15...terminal, 16...dielectric member

Claims

1. a base for receiving high frequency power, the base being made of metal and providing at least one enclosed space therein; an electrostatic chuck having an electrode therein and disposed on the base; at least one terminal extending downward from the electrode and terminating within the at least one space, the at least one terminal being spaced apart from the base so as to form a capacitor between the at least one terminal and the base; A substrate support comprising:

2. The substrate support of claim 1 , wherein the at least one space and the at least one terminal extend on a central axis of the substrate support.

3. the at least one space includes a plurality of spaces, the at least one terminal includes a plurality of terminals; the plurality of terminals extend from the electrode and terminate in the plurality of spaces, respectively, and are spaced apart from the base; the plurality of terminals and the plurality of spaces are arranged at equal intervals along a circumferential direction around a central axis of the substrate support; The substrate support of claim 1 .

4. The at least one terminal is a common line extending from the electrode; a plurality of branch lines branching from the common line; Including, The at least one space is a common space in which the common line is disposed; a plurality of branch spaces branching from the common space and in which the plurality of branch lines are respectively disposed; Including, The substrate support according to any one of claims 1 to 3.

5. The substrate support according to any one of claims 1 to 3, further comprising a dielectric member disposed within the at least one space.

6. the at least one space includes a plurality of enclosed spaces; the at least one terminal includes a plurality of terminals; The base is a base body that provides the plurality of spaces; At least one lid body that closes the plurality of spaces from below and is configured to be detachable from the base body; Including, the substrate support further includes a plurality of dielectric members removably disposed within the plurality of spaces. The substrate support of claim 1 .

7. a chamber; a substrate support disposed within the chamber; Equipped with The substrate support includes: a base for receiving high frequency power, the base being made of metal and providing at least one enclosed space therein; an electrostatic chuck having an electrode therein and disposed on the base; at least one terminal extending downward from the electrode and terminating within the at least one space, the at least one terminal being spaced apart from the base so as to form a capacitor between the at least one terminal and the base; Including, Plasma processing equipment.

8. The plasma processing apparatus of claim 7 , wherein the at least one space and the at least one terminal extend on a central axis of the substrate support.

9. the at least one space includes a plurality of spaces, the at least one terminal includes a plurality of terminals; the plurality of terminals extend from the electrode and terminate in the plurality of spaces, respectively, and are spaced apart from the base; the plurality of terminals and the plurality of spaces are arranged at equal intervals along a circumferential direction around a central axis of the substrate support; The plasma processing apparatus according to claim 7 .

10. The at least one terminal is a common line extending from the electrode; a plurality of branch lines branching from the common line; Including, The at least one space is a common space in which the common line is disposed; a plurality of branch spaces branching from the common space and in which the plurality of branch lines are respectively disposed; Including, The plasma processing apparatus according to any one of claims 7 to 9.

11. 10. The plasma processing apparatus according to claim 7, wherein the substrate support further includes a dielectric member disposed in the at least one space.

12. the at least one space includes a plurality of enclosed spaces; the at least one terminal includes a plurality of terminals; The base is a base body that provides the plurality of spaces; At least one lid body that closes the plurality of spaces from below and is configured to be detachable from the base body; Including, the substrate support further includes a plurality of dielectric members removably disposed within the plurality of spaces. The plasma processing apparatus according to claim 7 .

13. 10. The plasma processing apparatus according to claim 7, further comprising a high frequency power source electrically connected to the base.

14. 10. The plasma processing apparatus according to claim 7, further comprising: a DC power supply electrically connected to the electrode for applying a voltage to the electrode to generate an electrostatic attraction force between the substrate on the electrostatic chuck and the electrostatic chuck.

Images