In-situ angle measurement using channeling

Abstract

Systems and methods are disclosed that can measure the angle of incidence of ion beams, particularly ion beams comprising heavier ions.SOLUTION: In one embodiment, X-rays rather than ions are used to identify the channeling direction. In another embodiment, the workpiece is at least partially constructed of a material having a high molecular weight such that heavier ion beams can be measured. Further, in another embodiment, parameters of the ion beam are measured across the beam, allowing components of the ion implantation system to be further adjusted to produce a more uniform beam.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate to systems and methods for determining the angle of incidence of an ion beam, and in particular to determining the angle of incidence using channeling. [Background technology]

[0002] Ion beams are used to implant dopants into workpieces, such as silicon substrates. These ion beams may be generated using an ion source that produces ions of the desired species. These ions are extracted and manipulated by multiple components that select the desired species and direct the ions toward the workpiece.

[0003] The resulting ion beam impacts the workpiece at one or more angles of incidence, depending on the shape of the ion beam. In certain embodiments, it may be advantageous to precisely measure the angle of incidence of the ions on the workpiece. For example, in certain embodiments, there are implantation processes that require tight control of the angle of incidence.

[0004] One way to determine the angular distribution of an ion beam is through the use of Rutherford Backscattering. When ions strike a workpiece, some of the ions are scattered. The amount of scattered ions decreases as the ions become aligned with channels in the workpiece's crystalline structure. For example, if the angle of incidence of the ions is exactly parallel to the channels in the workpiece, backscattering will be minimized.

[0005] However, Rutherford backscattering is limited to embodiments where the molecular weight of the implanted ions is less than the molecular weight of the workpiece. Thus, Rutherford backscattering is not feasible with a phosphorus or arsenic ion beam and a silicon workpiece.

[0006] Therefore, it would be beneficial to have a system and method for accurately measuring the angle of incidence of an ion beam. Additionally, it would be advantageous to be able to measure beams containing heavier ions, such as arsenic and phosphorus. Finally, it would be beneficial to be able to use this system and method to improve the accuracy with which the angular distribution of an ion beam meets process requirements. Summary of the Invention

[0007] Systems and methods are disclosed that can measure the angle of incidence of ion beams, particularly ion beams containing heavier ions. In one embodiment, x-rays, rather than backscattered ions, are used to determine channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material with a high molecular weight that allows for heavier ion beams to be measured. Furthermore, in another embodiment, ion beam parameters are measured throughout the beam, allowing for further adjustments of ion implantation system components to produce a more uniform beam.

[0008] According to one embodiment, an incidence angle measurement system is disclosed. The incidence angle measurement system includes an ion implantation system generating an ion beam, a movable workpiece holder for holding a workpiece, a detector for capturing radiation from the workpiece, the detector including multiple sensors positioned along a width of the ion beam referred to as the X direction, and a controller. The controller rotates the movable workpiece to change the X angle and receives output from the detector at each of multiple X angles. The incidence angle of the ion beam in the X direction at each of multiple positions along the X direction is identified as the X angle at which the output received from the corresponding sensor is minimized. In one embodiment, the multiple sensors include Faraday sensors, each capturing backscattered ions from a portion of the ion beam. In some embodiments, the multiple sensors include X-ray detectors, each capturing X-rays emitted from a portion of the workpiece. In certain embodiments, the controller calculates a spread of the incidence angle in the X direction from the outputs received from the multiple sensors. In some embodiments, the ion implantation system includes extraction optics positioned proximate to the ion source, and the controller adjusts the position of the extraction optics to correct the spread of the incidence angle. In certain embodiments, the ion implantation system includes a quadrupole lens disposed downstream from the ion source, and the controller adjusts the focusing effect of the quadrupole lens to modify the spread of the incidence angle. In some embodiments, the ion implantation system includes a collimator disposed downstream from the ion source, and the controller adjusts a current supplied to the collimator to modify the spread of the incidence angle. In some embodiments, the controller rotates a movable workpiece holder to change the Y angle and receives outputs from a detector at each of a plurality of Y angles, and the incidence angle of the ion beam in the Y direction at each of a plurality of positions along the X direction is identified as the Y angle at which the output received from the corresponding sensor is minimized. In certain embodiments, the controller calculates the spread of the incidence angle in the Y direction from the outputs received from the plurality of sensors.

[0009] According to another embodiment, an incident angle measurement system is disclosed. The incident angle measurement system includes an ion implantation system that generates an ion beam, a movable workpiece holder for holding a workpiece, a detector including one or more X-ray detectors, and a controller, wherein the controller rotates the movable workpiece holder to change the X-angle and receives output from the detector at each of a plurality of X-angles, and the incident angle of the ion beam is identified as the X-angle that produces a minimum output from the detector. In certain embodiments, the ion beam includes ions having a higher atomic mass than the workpiece. In certain embodiments, the ion beam includes phosphorus or arsenic ions, and the workpiece includes a silicon workpiece.

[0010] According to another embodiment, an incident angle measurement system is disclosed. The incident angle measurement system includes an ion implantation system that generates an ion beam, a movable workpiece holder for holding a workpiece, a detector, a single-crystal target material disposed on the movable workpiece holder, and a controller. The controller rotates the movable workpiece holder to change the X angle and receives an output from the detector at each of a plurality of X angles. The incident angle of the ion beam is identified as the X angle at which the output from the detector is minimized. In certain embodiments, the single-crystal target material may be disposed on the movable workpiece holder at a position beyond the edge of the workpiece, thereby implanting the single-crystal target material with the ion beam when the workpiece is disposed on the movable workpiece holder. In certain embodiments, the single-crystal target material includes an element having a higher atomic mass than the workpiece. In some embodiments, the single-crystal target material is selected from the group consisting of tungsten, molybdenum, tantalum, germanium, gallium arsenide, gallium nitride, and indium phosphide. In certain embodiments, a controller rotates the movable workpiece holder to change the Y angle, and the incident angle of the ion beam is specified to be the Y angle that produces the minimum output from the detector. In certain embodiments, a single crystal target material is placed on the movable workpiece holder in place of the workpiece. In some embodiments, the single crystal target material has the shape and size of the workpiece.

[0011] For a better understanding of the present disclosure, reference is made to the accompanying drawings, which are incorporated herein by reference. [Brief explanation of the drawings]

[0012] [Figure 1] 1 illustrates an ion implantation system according to one embodiment. [Figure 2] 1 is an incident angle measurement system according to one embodiment. [Figure 3A] FIG. 10 is a side view of an incident angle measurement system according to another embodiment. [Figure 3B]FIG. 3B is a top view of the incident angle measurement system of FIG. [Figure 4] 1 shows a single crystal target material mounted on a movable workpiece holder. DETAILED DESCRIPTION OF THE INVENTION

[0013] As mentioned above, the system may be used to perform channeling implants or to measure and adjust an ion beam in an ion implantation system. In certain embodiments, the ion beam may be a scanned ribbon beam generated using a spot beam ion implantation system.

[0014] As shown in FIG. 1 , the ion implantation system includes an ion source 100 comprising a plurality of chamber walls defining an ion source chamber in which a plasma is generated. In certain embodiments, the ion source 100 may be an RF ion source. In this embodiment, an RF antenna may be disposed against a dielectric window. The dielectric window may comprise part or all of one of the chamber walls. The RF antenna may comprise a conductive material, such as copper. An RF power source is in electrical communication with the RF antenna. The RF power source may provide an RF voltage to the RF antenna. The power provided by the RF power source may be between 0.1 and 10 kW and may be at any suitable frequency, such as between 1 and 100 MHz. Furthermore, the power provided by the RF power source may be pulsed.

[0015] In another embodiment, a cathode is positioned within the ion source chamber. A filament is positioned behind the cathode and is energized to emit electrons. These electrons are attracted to the cathode, which in turn emits electrons into the ion source chamber. This cathode may be referred to as an indirectly heated cathode (IHC) because it is indirectly heated by the electrons emitted from the filament.

[0016] Other embodiments are possible, for example, the plasma may be generated in different ways, such as by a Bernas ion source, a capacitively coupled plasma (CCP) source, a microwave, or an electron-cyclotron-resonance (ECR) ion source, etc. The manner in which the plasma is generated is not limited by this disclosure.

[0017] One chamber wall, referred to as the extraction plate, includes an extraction aperture. The extraction aperture may be an opening through which ions 1 generated in the ion source chamber are extracted and directed through the mass analyzer 120 toward the workpiece 10. The extraction aperture may be any suitable shape. In certain embodiments, the extraction aperture may be oval or rectangular with one dimension, referred to as the width (x-dimension), which may be much larger than a second dimension, referred to as the height (y-dimension).

[0018] The extraction optics 110 are positioned outside and near the extraction aperture of the ion source 100. In certain embodiments, the extraction optics 110 include one or more electrodes. Each electrode may be a single conductive component with an aperture disposed therein. Alternatively, each electrode may include two conductive components spaced apart to create an aperture between them. The electrodes may be a metal, such as tungsten, molybdenum, or titanium. One or more of the electrodes may be electrically connected to ground. In certain embodiments, one or more of the electrodes may be biased using an electrode power supply. The electrode power supply may be used to bias one or more of the electrodes relative to the ion source to attract ions through the extraction aperture. The extraction aperture and the aperture in the extraction optics 110 are aligned so that ions pass through both apertures.

[0019] Downstream of the extraction optics 110 is a mass analyzer 120. The mass analyzer 120 uses a magnetic field to guide the path of the extracted ions 1. The magnetic field influences the flight path of the ions according to their mass and charge. A mass resolving device 130 having a resolving aperture 131 is located at the output (i.e., distal end) of the mass analyzer 120. By appropriately selecting the magnetic field, only ions 1 having a selected mass and charge will be guided through the resolving aperture 131. Other ions will collide with the walls of the mass resolving device 130 or the mass analyzer 120 and will not be able to travel further within the system.

[0020] In some embodiments, ions passing through the mass resolving device 130 may form a spot beam.

[0021] The spot beam may then enter a scanner 140 located downstream from the mass resolving device 130. The scanner 140 fans out the spot beam into multiple diverging beamlets. The scanner 140 may be electrostatic or magnetic.

[0022] In other embodiments, ions passing through the mass resolving device 130 may form a ribbon ion beam, where a broad beam is transported throughout the ion implantation system. For example, a ribbon beam may be extracted from the ion source 100. In this embodiment, the scanner 140 is not required.

[0023] In certain embodiments, a collimator 150 then converts these diverging beamlets into multiple parallel beamlets that are directed toward the workpiece 10. The collimator 150 may be a magnet. In this embodiment, a current is applied to the collimator magnet to steer the beamlets passing therethrough.

[0024] In other embodiments, a system of electrostatic lenses can act as collimator 150 to bend a diverging beam into multiple parallel beamlets.

[0025] The workpiece 10 is positioned on a movable workpiece holder 160 downstream from the collimator 150 .

[0026] In certain embodiments, one or more quadrupole lenses 190 may be positioned along the path of the ions. For example, the quadrupole lenses 190 may be positioned before the mass analyzer 120, after the mass analyzer 120, after the mass resolver 130, or at other locations.

[0027] In certain embodiments, the direction of the ion beam may be referred to as the Z direction, the direction perpendicular and horizontal to this direction may be referred to as the X direction, and the direction perpendicular and vertical to the Z direction may be referred to as the Y direction. In this example, it is assumed that the scanner 140 scans the spot beam in the X direction, while the movable workpiece holder 160 translates in the Y direction.

[0028] The detector 170 may be positioned proximate to a region of the workpiece 10. The detector 170 may be used to measure certain parameters associated with the ion beam 1. In certain embodiments, the detector 170 may include one or more Faraday devices arranged in a linear fashion. In another embodiment, the detector 170 may include multiple X-ray detectors. The operation of the detector 170 is described in more detail below.

[0029] A controller 180 is also used to control the system. Controller 180 has a processing unit 181 and an associated memory device 182. This memory device 182 contains instructions 183 that, when executed by the processing unit, enable the system to perform the functions described herein. This memory device 182 may be any non-transitory storage medium, including non-volatile memory, such as flash ROM, electrically erasable ROM, or other suitable device. In other embodiments, memory device 182 may be volatile memory, such as RAM or DRAM. In particular embodiments, controller 180 may be a general-purpose computer, an embedded processor, or a specially designed microcontroller. The actual implementation of controller 180 is not limited by this disclosure.

[0030] The controller 180 may be in communication with the detector 170, the scanner 140, and the movable workpiece holder 160, as described in more detail below. The controller 180, the detector 170, and the movable workpiece holder 160 may be part of an incidence angle measurement system.

[0031] FIG. 2 shows a simplified diagram illustrating the operation of the incidence angle measurement system 200. As described above, the controller 180 communicates with the movable workpiece holder 160 and the detector 170. The ion beam 1 is directed toward the workpiece 10 mounted on the movable workpiece holder 160. The detector 170 is positioned proximate to the workpiece 10 to receive radiation from the workpiece 10 as it is being implanted by the ion beam 1. For example, the radiation may be backscattered ions or X-rays. The controller 180 rotates the movable workpiece holder 160 about either the Y-axis or the X-axis. At each rotation angle, the detector 170 detects the radiation and transmits this information to the controller 180. The controller 180 may record this information as a function of the rotation angle. After this process is complete, the result may be a set of data indicating a minimum value, as shown in graph 210. It should be noted that the controller 180 is not required to generate the graph 210; rather, the graph 210 is shown to illustrate the expected output from the detector 170 as the movable workpiece holder 160 rotates.

[0032] When the controller 180 repeats this process by rotating about both the X and Y axes, it can determine with high precision the X angle (X') and Y angle (Y') corresponding to the orientation of the movable workpiece holder 160 that channels the beam into the workpiece 10. Rotating about the X axis changes the Y angle, while rotating about the Y axis changes the X angle.

[0033] Additionally, the system may also include the ability to modify the beam angle based on the results of the incidence angle measurement system 200. For example, based on the obtained results, the controller 180 may manipulate the current to the collimator 150 or another component within the ion implantation system. Thus, in certain embodiments, an incidence angle measurement and control system is disclosed.

[0034] For example, if the ion beam at the workpiece is found to be diverging in the X direction, this can be compensated for by increasing the current to the collimating magnet. Such an increase in current does two things: it increases the average bend angle and it increases the amount of convergence. Once the correct current is achieved to achieve perfect parallelism (neither divergence nor convergence) and the average angle is measured, the workpiece 10 can be rotated to the desired orientation relative to the ion beam. Because the ion beam is now parallel, the desired beam incidence angle will be exactly the same across the width of the flat workpiece.

[0035] In another example, if the beam at the workpiece is found to have an upward orientation on one side and a more downward orientation on the other side, it may be possible to move the ion beam longitudinally by adjusting the position of the electrodes in the extraction optics 110, thus bringing the ion beam 1 closer to the mid-plane of the collimating magnet and achieving a more uniform longitudinal (y') angle across the sweep (x). Once a uniform angle is achieved, the workpiece may be tilted to the desired orientation relative to this uniform angle.

[0036] The system may also detect angular variations that cannot be corrected by manipulating the beam, but may require manual maintenance intervention such as part alignment or replacement.

[0037] The present disclosure describes several embodiments that allow for improved measurement and optional control of the angle of incidence of an ion beam.

[0038] In a first example, Rutherford backscattering is used to determine the angle of incidence of the ion beam at multiple positions. FIG. 3A shows a side view of the workpiece holder 160, while FIG. 3B shows a top view of the workpiece holder 160. The workpiece 10 is positioned on the movable workpiece holder 160. In certain embodiments, the workpiece 10 may be a silicon substrate. In this embodiment, the detector 170 includes one or more Faraday sensors 171 spaced apart in the X direction. In some embodiments, the one or more Faraday sensors 171 may also be spaced apart in the Y direction. In the case of a spot beam, as the ion beam 1 is scanned in the X direction (i.e., vertically in FIG. 3B), each of the Faraday sensors 171 sequentially receives radiation from the workpiece 10. In the case of a ribbon ion beam, all of the Faraday sensors 171 simultaneously receive radiation. The controller 180 is in communication with each of these Faraday sensors 171 and can generate a graph similar to graph 210 for each of the Faraday sensors 171. After all data is collected from the Faraday sensors 171, the controller 180 can rotate the movable workpiece holder 160 about the X and / or Y axes. In this manner, the controller 180 can determine the angles of incidence (X angle (X') and / or Y angle (Y')) for multiple positions along the length of the ion beam 1.

[0039] As mentioned above, implantation systems produce wide beams, either as ribbon beams or scanning spot beams. In many beam alignment tasks, it is useful to verify that the angles (i.e., X' and Y') are uniform across the width of the beam. If there is an overall divergence or convergence (in the sense that X'(x)=∫J(x,y)·(x')(x,y)dy / ∫J(x,y)dy or Y'(x)=∫J(x,y)·(y')(x,y)dy / ∫J(x,y)dy indicates an overall upward or downward slope), this can be corrected by adjusting the current to the collimator 150.

[0040] As described above, the X angle along the ion beam 1 (i.e., X'(x)) can be determined by using multiple detectors 170, each directed over a limited range of x across the width of the ion beam 1. As described above, the X tilt angle can be varied and a minimum for each of the multiple Faraday sensors 171 can be determined. In this manner, multiple points on the X'(x) curve can be obtained to modify the convergence or divergence in the X direction. Similarly, the Y tilt angle can be varied and a minimum for each of the multiple Faraday sensors 171 can be determined. In this manner, multiple points on the Y'(x) curve can be obtained to detect longitudinal shear distortion of the beam.

[0041] Additionally, if there is a fixed offset in the X or Y angles, the movable workpiece holder 160 may be tilted to ensure that the ion beam 1 strikes the workpiece 10 at a perpendicular angle. In other words, rather than adjusting the ion beam 1 to remove any fixed angular offset, the movable workpiece holder 160 may be adjusted to compensate for this offset.

[0042] Furthermore, this embodiment also provides a function of x: σ x’ (x) and σ y’ The angular spread in both the x and y directions can also be measured as (x). It can be advantageous to minimize these angular spreads to achieve the maximum amount of channeling. The magnitude of the angular spread is typically set by the details of the beam optics and can be manipulated by variables such as the exact position of the extraction electrodes or the focusing effect of various quadrupole lenses 190 that may be included in the beamline for this purpose. Spot beams are often tuned for minimum size at the workpiece 10 because this provides the most efficient dosing. However, tuning for minimum angular spread may produce larger spot sizes and less efficient scanning, but may produce more effective channeling and therefore better process results.

[0043] Thus, in one embodiment, an incidence angle measurement and control system is disclosed that captures incidence angle information for multiple positions along the width of the ion beam. This is accomplished using multiple detectors 170 spaced apart in the X direction. In yet another embodiment, a single detector 170 may be utilized, where the detector 170 is moved to various positions in the X direction to collect data across the width of the ion beam.

[0044] In another embodiment, the present application enables the use of ion beams containing heavier species using Rutherford backscattering. In one embodiment, a target workpiece made of a heavier crystalline material, such as tungsten, can be used. Specifically, as described above, the use of a silicon substrate limits the possible species for the ion beam to those with atomic weights smaller than that of silicon. Therefore, a different single-crystalline material, such as tungsten or some other higher atomic number metal or compound, may be used as the target workpiece. This target workpiece may be in the form of a silicon wafer and may be clamped to the movable workpiece holder 160 by an electrostatic clamp. In this embodiment, measurements are performed in the same manner as described above.

[0045] In another embodiment, target material may be added to the movable workpiece holder. In certain embodiments, the target material may be placed on the movable workpiece holder 160 at a location beyond the edge of the workpiece 10. One possible configuration is shown in FIG. 4, which shows a movable workpiece holder 260. In this case, a strip of single crystal target material 270 is mounted below the silicon workpiece 10 but is attached to the movable workpiece holder 260 so that it is articulated by a tilt mechanism that controls the workpiece 10. The single crystal target material 270 may be attached to the movable workpiece holder 260 so that the relationship between the channeling direction of the single crystal target material 270 and the position of the movable workpiece holder 260 is well-defined. The single crystal target material 270 may be at least as wide as the workpiece 10 to provide data across the entire width of the ion beam 1. Therefore, the width of the single crystal target material 270 may be greater than the width of the workpiece 10. The height of the single crystal target material 270 may be similar to or greater than the height of the ion beam. The height of the ion beam may vary from about 5 mm to 50 mm. The thickness of the single crystal target material 270 may be at least thick enough to stop the ion beam 1. A typical range for high energy ions is between 1 and 20 microns.

[0046] High atomic mass crystalline targets are advantageous for Rutherford backscattering measurements because ions with higher atomic masses than silicon will be backscattered. Using a metal as a target has the advantage that crystalline damage accumulates much more slowly in the target than in covalent structures. Furthermore, using an aluminum target and detecting X-rays instead of backscattered ions would have an advantage over tungsten in that it avoids the risk of harmful contamination of most semiconductors.

[0047] Thus, in this embodiment, the system utilizes a target material that is a single crystal material having an atomic mass higher than silicon, such as tungsten, molybdenum, tantalum, germanium, gallium arsenide, gallium nitride, indium phosphide, or any other material that can be sourced as a single crystal or epitaxially deposited on some other single crystal substrate. This single crystal target material 270 may be used to measure the angle of incidence at a specific location, such as the center of the ion beam. In another embodiment, this single crystal target material 270 may be utilized in conjunction with detector 170 of FIGS. 3A-3B such that the angle of incidence is measured at multiple locations along the width of the ion beam.

[0048] The single crystal target material 270 may be positioned at other locations on the movable workpiece holder 260. For example, in one embodiment, the single crystal target material 270 is positioned where the workpiece 10 would typically be positioned. In one embodiment, the single crystal target material 270 may be the same size and shape as a typical workpiece. In another embodiment, the single crystal target material 270 may have a different shape and size, but may be dimensioned to be at least as wide as the workpiece and at least as tall as the ion beam 1.

[0049] According to another embodiment, detector 170 does not use Rutherford backscatter. Rather, detector 170 includes one or more X-ray detectors. Using X-ray detectors instead of Faraday sensors avoids limitations on the relative mass of ions and targets.

[0050] The charged particle induced x-ray emission (PIXE) process occurs when energetic ions collide with molecules and excite their inner shell electrons. When the electrons return to their ground state, they emit x-rays whose wavelength is determined by their binding energy and is therefore characteristic of the material within the target workpiece. When energetic ions are channeled within a crystal, this interaction with tightly bound electrons is greatly reduced. Because it is these inner shell electrons that produce the highest energy (K-ray) x-rays, x-ray yield can be very sensitive to channeling conditions. In other words, as the ion beam 1 enters channels within the workpiece, the amount of x-rays produced decreases.

[0051] In other words, similar to Rutherford backscattering, there is minimal emission of X-rays when ions are implanted into the channels of the crystal structure. Therefore, in certain embodiments, detector 170 may include one or more X-ray detectors. Recent developments in X-ray detectors have resulted in compact units that do not require liquid nitrogen and have sufficient energy resolution to eliminate background from other sources.

[0052] Interestingly, x-ray radiation occurs regardless of the relative masses of the ions and the workpiece. In other words, an ion beam containing heavier ions such as phosphorus or arsenic may be implanted into a silicon workpiece and x-rays may still be produced. Thus, the use of charged particle induced x-ray analysis (PIXE) allows silicon workpieces to be used regardless of the species implanted.

[0053] It should be noted that an X-ray detector may be used as detector 170 in any of the embodiments disclosed herein. In other words, an X-ray detector may be used in the embodiment of Figure 3. Furthermore, an X-ray detector may be used with heavier or lighter targets, as desired.

[0054] The embodiments described above in this application can have many advantages. High energy implants benefit from using intentionally channeled incidence angles for at least two reasons. First, ions penetrate deeper into the workpiece at a given energy. Second, channeled incidence angles cause less crystal damage.

[0055] However, intentionally channeled implants utilize extremely precise angular control (<0.05 degrees or approximately 1 mrad) of both the average beam angle and the angular spread within the ion beam. Existing metrology methods based on high aspect ratio apertures and Faradays to measure ion current cannot achieve this precision. Furthermore, current systems are limited by constraints on the relative mass of the ions and silicon workpiece in Rutherford backscattering applications.

[0056] As shown in Figure 3, by using multiple detectors in the X direction, it is possible to identify and control the beam angle and beam divergence throughout the ion beam. Specifically, the current to the collimator 150 may be adjusted to meet the constraints of the channeled implant. Alternatively or additionally, the precise positioning of the extraction optics and the focusing effect of the quadrupole lens may be adjusted to meet these constraints. Thus, the system allows for channeled implants to be performed throughout the workpiece.

[0057] Furthermore, the use of an X-ray detector allows the same measurement and control system to be used regardless of the desired ion species, so measurements can be performed using heavier ions and silicon workpieces, if desired.

[0058] The scope of the present disclosure is not limited to the specific embodiments described herein. Various embodiments of the present disclosure and modifications of the present disclosure other than those described above will be apparent to those skilled in the art from the above description and the accompanying drawings, as well as those described herein. Therefore, such other embodiments and modifications are intended to be included within the scope of the present disclosure. Furthermore, while the present disclosure has been described herein in the context of particular implementations in particular environments for particular purposes, those skilled in the art will recognize that its usefulness is not limited thereto, and that the present disclosure may be beneficially implemented in any number of environments for any number of purposes. Accordingly, the claims set forth below should be construed in light of the full breadth and spirit of the disclosure as described herein.

Claims

1. 1. An incidence angle measurement system comprising: an ion implantation system for generating an ion beam; a movable workpiece holder for holding the workpiece; a detector for capturing radiation from the workpiece, the detector including a plurality of sensors arranged along the width of the ion beam, referred to as the X direction; a controller configured to rotate the movable workpiece holder to vary an X angle and receive an output from the detector at each of a plurality of X angles, wherein an incident angle of the ion beam in the X direction at each of a plurality of positions along the X direction is identified as the X angle at which the output received from a corresponding sensor is minimum.

2. The incidence angle measurement system of claim 1 , wherein the plurality of sensors includes Faraday sensors, each Faraday sensor capturing backscattered ions from a portion of the ion beam.

3. The incidence angle measurement system of claim 1 , wherein the plurality of sensors include X-ray detectors, each X-ray detector capturing X-rays emitted from a portion of the workpiece.

4. The incident angle measurement system of claim 1 , wherein the controller calculates the spread of incident angles in the X direction from outputs received from the plurality of sensors.

5. 5. The incidence angle measurement system of claim 4, wherein the ion implantation system includes an extraction optic positioned proximate to an ion source, and the controller adjusts a position of the extraction optic to modify the incidence angle spread.

6. 5. The incidence angle measurement system of claim 4, wherein the ion implantation system includes a quadrupole lens disposed downstream from an ion source, and the controller adjusts a focusing effect of the quadrupole lens to correct for the spread of the incidence angle.

7. 5. The incidence angle measurement system of claim 4, wherein the ion implantation system includes a collimator disposed downstream from an ion source, and the controller adjusts current supplied to the collimator to modify the incidence angle spread.

8. 2. The incident angle measurement system of claim 1, wherein the controller rotates the movable workpiece holder to change the Y angle and receives an output from the detector at each of a plurality of Y angles, and the incident angle of the ion beam in the Y direction at each of a plurality of positions along the X direction is identified as the Y angle at which the output received from the corresponding sensor is minimum.

9. The incident angle measurement system of claim 8 , wherein the controller calculates the spread of incident angles in the Y direction from outputs received from the plurality of sensors.

10. 1. An incidence angle measurement system comprising: an ion implantation system for generating an ion beam; a movable workpiece holder for holding the workpiece; a detector including one or more X-ray detectors; and a controller configured to rotate the movable workpiece holder to vary an X angle and receive an output from the detector at each of a plurality of X angles, wherein the incident angle of the ion beam is identified as the X angle at which the output from the detector is minimum.

11. The incidence angle measurement system of claim 10 , wherein the ion beam includes ions having a higher atomic mass than the workpiece.

12. The incidence angle measurement system of claim 11 , wherein the ion beam comprises phosphorus ions or arsenic ions and the workpiece comprises a silicon workpiece.

13. 1. An incidence angle measurement system comprising: an ion implantation system for generating an ion beam; a movable workpiece holder for holding the workpiece; detector, a single crystal target material, different from the workpiece, disposed on the movable workpiece holder; and a controller configured to rotate the movable workpiece holder to vary an X angle and receive an output from the detector at each of a plurality of X angles, wherein the incident angle of the ion beam is identified as the X angle at which the output from the detector is minimum.

14. 14. The incidence angle measurement system of claim 13, wherein the single crystal target material is positioned on the movable workpiece holder at a position beyond an edge of the workpiece such that the single crystal target material can be implanted by the ion beam when the workpiece is positioned on the movable workpiece holder.

15. 14. The incidence angle measurement system of claim 13, wherein the single crystal target material includes elements having higher atomic masses than the workpiece.

16. 14. The incident angle measurement system of claim 13, wherein the single crystal target material is selected from the group consisting of tungsten, molybdenum, tantalum, germanium, gallium arsenide, gallium nitride, and indium phosphide.

17. 14. The incident angle measurement system of claim 13, wherein the controller rotates the movable workpiece holder to change a Y angle, and the incident angle of the ion beam is identified as the Y angle at which the output from the detector is minimum.

18. 14. The incidence angle measurement system of claim 13, wherein the single crystal target material is placed on the movable workpiece holder in place of the workpiece.

19. 20. The incidence angle measurement system of claim 18, wherein the single crystal target material has the shape and size of the workpiece.

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