Vapor deposition apparatus and vapor deposition head

Abstract

To form a desired thin film without applying a fine mask.SOLUTION: According to an embodiment, a vapor deposition method includes preparing a processing substrate in which a lower electrode, a rib having an opening overlapping the lower electrode, and a partition wall including a lower portion disposed on the rib and an upper portion disposed on the lower portion and protruding from a side surface of the lower portion are formed on a substrate, setting a spread angle of vapor of a first material ejected from a first vapor deposition head to a first angle, depositing the first material on the processing substrate, and setting a spread angle of vapor of a second material ejected from a second vapor deposition head to a second angle larger than the first angle, the second material is deposited on the process substrate on which the first material is deposited.SELECTED DRAWING: Figure 12

Description

[Technical Field]

[0001] FIELD OF THE INVENTION An embodiment of the present invention relates to a vapor deposition apparatus and a vapor deposition method. [Background technology]

[0002] In recent years, display devices using organic light-emitting diodes (OLEDs) as display elements have been put to practical use. These display elements include a pixel circuit including a thin-film transistor, a lower electrode connected to the pixel circuit, an organic layer covering the lower electrode, and an upper electrode covering the organic layer. In addition to the light-emitting layer, the organic layer includes functional layers such as a hole transport layer and an electron transport layer.

[0003] For example, when an organic layer is vapor-deposited using a mask, a fine mask having openings corresponding to each pixel is used. However, the precision of the fine mask processing and deformation of the opening shape may reduce the precision of the thin film formed by vapor deposition. Therefore, a technology for forming a thin film in a desired region without using a fine mask is needed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-195677 [Patent Document 2] Japanese Patent Application Laid-Open No. 2004-207217 [Patent Document 3] Japanese Patent Application Laid-Open No. 2008-135325 [Patent Document 4] Japanese Patent Application Laid-Open No. 2009-32673 [Patent Document 5] Japanese Patent Application Laid-Open No. 2010-118191 [Patent Document 6] International Publication No. 2018 / 179308 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a deposition apparatus and a deposition method that are capable of forming a desired thin film without using a fine mask. [Means for solving the problem]

[0006] According to one embodiment, the deposition method comprises: A processing substrate is prepared on which a lower electrode, a rib having an opening overlapping the lower electrode, and a partition wall including a lower portion disposed on the rib and an upper portion disposed on the lower portion and protruding from a side surface of the lower portion are formed; the spread angle of vapor of a first material ejected from a first deposition head is set to a first angle, and the first material is deposited on the processing substrate; the spread angle of vapor of a second material ejected from a second deposition head is set to a second angle greater than the first angle, and the second material is deposited on the processing substrate on which the first material has been deposited.

[0007] According to one embodiment, the deposition method comprises: a processing substrate on which a lower electrode, a rib having an opening overlapping the lower electrode, and a partition wall including a lower portion disposed on the rib and an upper portion disposed on the lower portion and protruding from a side surface of the lower portion are formed; the processing substrate is placed on a first stage; an angle formed between an extension direction of a nozzle of a first deposition head and a normal to the first stage is set to a first angle; vapor of a first material is ejected from the nozzle of the first deposition head to deposit the first material onto the processing substrate; the processing substrate on which the first material has been deposited is placed on a second stage; an angle formed between an extension direction of a nozzle of a second deposition head and a normal to the second stage is set to a second angle greater than the first angle; vapor of a second material is ejected from the nozzle of the second deposition head to deposit the second material onto the processing substrate;

[0008] According to one embodiment, the deposition apparatus comprises: The vapor deposition apparatus comprises a first stage, a first deposition head configured to deposit a first material onto a processing substrate placed on the first stage, a second stage, and a second deposition head placed on the second stage and configured to deposit a second material onto the processing substrate on which the first material has been deposited, wherein each of the first deposition head and the second deposition head comprises a deposition source that heats a material to generate vapor, and a nozzle connected to the deposition source that ejects the vapor generated by the deposition source, wherein the spread angle of the vapor of the first material ejected from the first deposition head is set to a first angle, and the spread angle of the vapor of the second material ejected from the second deposition head is set to a second angle different from the first angle. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a display device DSP. [Figure 2] FIG. 2 is a diagram showing an example of the layout of the subpixels SP1, SP2, and SP3. [Figure 3] FIG. 3 is a schematic cross-sectional view of the display device DSP taken along the line III-III in FIG. [Figure 4] FIG. 4 is a diagram showing an example of the configuration of the display element 20. As shown in FIG. [Figure 5] FIG. 5 is a diagram for explaining an example of a method for manufacturing the display device DSP. [Figure 6] FIG. 6 is a diagram illustrating the vapor deposition process of the first thin film shown in FIG. [Figure 7] FIG. 7 is a diagram showing an example of a vapor deposition apparatus 100 according to this embodiment. [Figure 8] FIG. 8 is another cross-sectional view of the deposition head 120 shown in FIG. [Figure 9] FIG. 9 is another cross-sectional view of the deposition head 120 shown in FIG. [Figure 10] FIG. 10 is a plan view showing an example of a sleeve 123 connected to a vapor deposition source 121. As shown in FIG. [Figure 11] FIG. 11 is a plan view showing another example of the sleeve 123 connected to the vapor deposition source 121. As shown in FIG. [Figure 12] FIG. 12 is a diagram showing an example of a vapor deposition apparatus and a vapor deposition method according to this embodiment. [Figure 13] FIG. 13 is a diagram for explaining the deposition angle when the first thin film is deposited. [Figure 14] FIG. 14 is a diagram showing another example of the vapor deposition apparatus and vapor deposition method according to this embodiment. [Figure 15] FIG. 15 is a diagram for explaining the deposition angle when the first thin film is deposited. DETAILED DESCRIPTION OF THE INVENTION

[0010] An embodiment will be described with reference to the drawings. The disclosure is merely an example, and appropriate modifications that a person skilled in the art can easily make while maintaining the gist of the invention are naturally included within the scope of the present invention. Furthermore, the drawings may be schematic in terms of the width, thickness, shape, etc. of each part compared to the actual embodiment for the sake of clarity, but these are merely examples and are not intended to limit the interpretation of the present invention. Furthermore, in this specification and each drawing, components that perform the same or similar functions as those described above with reference to the previous drawings are designated by the same reference numerals, and redundant detailed descriptions may be omitted as appropriate.

[0011] In the drawings, mutually orthogonal X-, Y-, and Z-axes are shown as necessary to facilitate understanding. The direction along the X-axis is referred to as the first direction, the direction along the Y-axis is referred to as the second direction, and the direction along the Z-axis is referred to as the third direction. Viewing various elements parallel to the third direction Z is referred to as a planar view.

[0012] The display device according to this embodiment is an organic electroluminescence display device having organic light-emitting diodes (OLEDs) as display elements, and can be installed in televisions, personal computers, in-vehicle devices, tablet terminals, smartphones, mobile phone terminals, and the like.

[0013] FIG. 1 is a diagram showing an example of the configuration of a display device DSP. The display device DSP has a display area DA for displaying an image and a peripheral area SA around the display area DA, both of which are disposed on an insulating substrate 10. The substrate 10 may be made of glass or a flexible resin film.

[0014] In this embodiment, the shape of the substrate 10 in plan view is rectangular. However, the shape of the substrate 10 in plan view is not limited to rectangular, and may be other shapes such as square, circle, or ellipse.

[0015] The display area DA includes a plurality of pixels PX arranged in a matrix in the first direction X and the second direction Y. Each pixel PX includes a plurality of subpixels SP. In one example, the pixel PX includes a red subpixel SP1, a green subpixel SP2, and a blue subpixel SP3. The pixel PX may include subpixels SP of other colors, such as white, in addition to or instead of the subpixels SP1, SP2, and SP3.

[0016] The subpixel SP includes a pixel circuit 1 and a display element 20 driven by the pixel circuit 1. The pixel circuit 1 includes a pixel switch 2, a drive transistor 3, and a capacitor 4. The pixel switch 2 and the drive transistor 3 are switching elements formed of, for example, thin film transistors.

[0017] The gate electrode of the pixel switch 2 is connected to the scanning line GL. One of the source electrode and drain electrode of the pixel switch 2 is connected to the signal line SL, and the other is connected to the gate electrode of the drive transistor 3 and the capacitor 4. In the drive transistor 3, one of the source electrode and drain electrode is connected to the power line PL and the capacitor 4, and the other is connected to the anode of the display element 20.

[0018] The configuration of the pixel circuit 1 is not limited to the example shown in the drawing. For example, the pixel circuit 1 may include more thin film transistors and capacitors.

[0019] The display elements 20 are organic light-emitting diodes (OLEDs) that function as light-emitting elements and may be referred to as organic EL elements. For example, the subpixel SP1 includes a display element 20 that emits light in the red wavelength range, the subpixel SP2 includes a display element 20 that emits light in the green wavelength range, and the subpixel SP3 includes a display element 20 that emits light in the blue wavelength range.

[0020] FIG. 2 is a diagram showing an example of the layout of the subpixels SP1, SP2, and SP3. 2, the subpixels SP1 and SP2 are aligned in the second direction Y. Furthermore, the subpixels SP1 and SP2 are aligned in the first direction X with the subpixel SP3.

[0021] When the subpixels SP1, SP2, and SP3 are laid out in this manner, the display area DA is formed with columns in which the subpixels SP1 and SP2 are alternately arranged in the second direction Y, and columns in which multiple subpixels SP3 are repeatedly arranged in the second direction Y. These columns are arranged alternately in the first direction X.

[0022] The layout of the subpixels SP1, SP2, and SP3 is not limited to the example in Fig. 2. As another example, the subpixels SP1, SP2, and SP3 in each pixel PX may be arranged in order in the first direction X.

[0023] In the display area DA, ribs 5 and partition walls 6 are arranged. The ribs 5 have openings AP1, AP2, and AP3 in the subpixels SP1, SP2, and SP3, respectively. In the example of Fig. 2, opening AP2 is larger than opening AP1, and opening AP3 is larger than opening AP2.

[0024] The partitions 6 overlap the ribs 5 in a plan view. The partitions 6 have a plurality of first partitions 6x extending in the first direction X and a plurality of second partitions 6y extending in the second direction Y. The plurality of first partitions 6x are respectively arranged between the openings AP1 and AP2 adjacent to each other in the second direction Y and between two openings AP3 adjacent to each other in the second direction Y. The second partitions 6y are respectively arranged between the openings AP1 and AP3 adjacent to each other in the first direction X and between the openings AP2 and AP3 adjacent to each other in the first direction X.

[0025] 2, the first partition 6x and the second partition 6y are connected to each other. As a result, the partition 6 as a whole is formed in a lattice shape surrounding the openings AP1, AP2, and AP3. It can also be said that the partition 6 has openings in the subpixels SP1, SP2, and SP3, similar to the rib 5.

[0026] Subpixel SP1 includes a lower electrode LE1, an upper electrode UE1, and an organic layer OR1 that overlap with aperture AP1. Subpixel SP2 includes a lower electrode LE2, an upper electrode UE2, and an organic layer OR2 that overlap with aperture AP2. Subpixel SP3 includes a lower electrode LE3, an upper electrode UE3, and an organic layer OR3 that overlap with aperture AP3.

[0027] In the example of FIG. 2, the outlines of the lower electrodes LE1, LE2, and LE3 are indicated by dotted lines, and the outlines of the organic layers OR1, OR2, and OR3 and the upper electrodes UE1, UE2, and UE3 are indicated by dashed-dotted lines. The peripheral edges of the lower electrodes LE1, LE2, and LE3 overlap the ribs 5. The outline of the upper electrode UE1 roughly matches the outline of the organic layer OR1, and the peripheral edges of the upper electrode UE1 and the organic layer OR1 overlap the partition walls 6. The outline of the upper electrode UE2 roughly matches the outline of the organic layer OR2, and the peripheral edges of the upper electrode UE2 and the organic layer OR2 overlap the partition walls 6. The outline of the upper electrode UE3 roughly matches the outline of the organic layer OR3, and the peripheral edges of the upper electrode UE3 and the organic layer OR3 overlap the partition walls 6.

[0028] The lower electrode LE1, the upper electrode UE1, and the organic layer OR1 constitute the display element 20 of the subpixel SP1. The lower electrode LE2, the upper electrode UE2, and the organic layer OR2 constitute the display element 20 of the subpixel SP2. The lower electrode LE3, the upper electrode UE3, and the organic layer OR3 constitute the display element 20 of the subpixel SP3. The lower electrodes LE1, LE2, and LE3 correspond to, for example, the anode of the display element 20. The upper electrodes UE1, UE2, and UE3 correspond to, for example, the cathode of the display element 20, or a common electrode.

[0029] The lower electrode LE1 is connected to the pixel circuit 1 of the subpixel SP1 (see FIG. 1) through a contact hole CH1. The lower electrode LE2 is connected to the pixel circuit 1 of the subpixel SP2 through a contact hole CH2. The lower electrode LE3 is connected to the pixel circuit 1 of the subpixel SP3 through a contact hole CH3.

[0030] FIG. 3 is a schematic cross-sectional view of the display device DSP taken along the line III-III in FIG. A circuit layer 11 is disposed on the substrate 10. The circuit layer 11 includes various circuits and wirings such as the pixel circuits 1, scanning lines GL, signal lines SL, and power supply lines PL shown in FIG. 1. The circuit layer 11 is covered with an insulating layer 12. The insulating layer 12 functions as a planarizing film that flattens unevenness caused by the circuit layer 11.

[0031] The lower electrodes LE1, LE2, and LE3 are disposed on the insulating layer 12. The rib 5 is disposed on the insulating layer 12 and the lower electrodes LE1, LE2, and LE3. The ends of the lower electrodes LE1, LE2, and LE3 are covered by the rib 5.

[0032] The partition wall 6 includes a lower portion 61 disposed on the rib 5 and an upper portion 62 covering the upper surface of the lower portion 61. The upper portion 62 has a width greater than that of the lower portion 61. As a result, both ends of the upper portion 62 protrude beyond the side surfaces of the lower portion 61 in FIG. 3. Such a shape of the partition wall 6 can also be said to be an overhanging shape.

[0033] The organic layer OR1 shown in FIG. 2 includes a first organic layer OR1a and a second organic layer OR1b spaced apart from each other. The upper electrode UE1 shown in FIG. 2 also includes a first upper electrode UE1a and a second upper electrode UE1b spaced apart from each other. As shown in FIG. 3, the first organic layer OR1a contacts the lower electrode LE1 through the opening AP1, covers the lower electrode LE1, and also covers a portion of the rib 5. The second organic layer OR1b is located on the upper portion 62. The first upper electrode UE1a faces the lower electrode LE1 and covers the first organic layer OR1a. Furthermore, the first upper electrode UE1a contacts the side surface of the lower portion 61. The second upper electrode UE1b is located above the partition wall 6 and covers the second organic layer OR1b.

[0034] The organic layer OR2 shown in FIG. 2 includes a first organic layer OR2a and a second organic layer OR2b that are spaced apart from each other. The upper electrode UE2 shown in FIG. 2 also includes a first upper electrode UE2a and a second upper electrode UE2b that are spaced apart from each other. As shown in FIG. 3, the first organic layer OR2a contacts the lower electrode LE2 through the opening AP2, covers the lower electrode LE2, and also covers a portion of the rib 5. The second organic layer OR2b is located on the upper portion 62. The first upper electrode UE2a faces the lower electrode LE2 and covers the first organic layer OR2a. Furthermore, the first upper electrode UE2a contacts the side surface of the lower portion 61. The second upper electrode UE2b is located above the partition wall 6 and covers the second organic layer OR2b.

[0035] The organic layer OR3 shown in FIG. 2 includes a first organic layer OR3a and a second organic layer OR3b that are spaced apart from each other. The upper electrode UE3 shown in FIG. 2 also includes a first upper electrode UE3a and a second upper electrode UE3b that are spaced apart from each other. As shown in FIG. 3, the first organic layer OR3a contacts the lower electrode LE3 through the opening AP3, covers the lower electrode LE3, and also covers a portion of the rib 5. The second organic layer OR3b is located on the upper portion 62. The first upper electrode UE3a faces the lower electrode LE3 and covers the first organic layer OR3a. Furthermore, the first upper electrode UE3a contacts the side surface of the lower portion 61. The second upper electrode UE3b is located above the partition wall 6 and covers the second organic layer OR3b.

[0036] Sealing layers 71, 72, and 73 are disposed in the subpixels SP1, SP2, and SP3, respectively. The sealing layer 71 continuously covers the first upper electrode UE1a, the side surfaces of the lower portion 61, and the second upper electrode UE1b. The sealing layer 72 continuously covers the first upper electrode UE2a, the side surfaces of the lower portion 61, and the second upper electrode UE2b. The sealing layer 73 continuously covers the first upper electrode UE3a, the side surfaces of the lower portion 61, and the second upper electrode UE3b.

[0037] 3, the second organic layer OR1b, the second upper electrode UE1b, and the sealing layer 71 on the partition wall 6 between the subpixels SP1 and SP3 are spaced apart from the second organic layer OR3b, the second upper electrode UE3b, and the sealing layer 73 on the partition wall 6. In addition, the second organic layer OR2b, the second upper electrode UE2b, and the sealing layer 72 on the partition wall 6 between the subpixels SP2 and SP3 are spaced apart from the second organic layer OR3b, the second upper electrode UE3b, and the sealing layer 73 on the partition wall 6.

[0038] The sealing layers 71, 72, and 73 are covered with a resin layer 13. The resin layer 13 is covered with a sealing layer 14. Furthermore, the sealing layer 14 is covered with a resin layer 15.

[0039] The insulating layer 12 is made of an organic material. The rib 5 and the sealing layers 14, 71, 72, and 73 are made of an inorganic material such as silicon nitride (SiNx). The thickness of the rib 5 made of an inorganic material is sufficiently smaller than the thickness of the partition wall 6 and the insulating layer 12. In one example, the thickness of the rib 5 is 200 nm or more and 400 nm or less.

[0040] The lower portion 61 of the partition wall 6 is electrically conductive. The upper portion 62 of the partition wall 6 may also be electrically conductive.

[0041] The lower electrodes LE1, LE2, and LE3 may be formed of a transparent conductive material such as ITO, or may have a laminated structure of a metal material such as silver (Ag) and a transparent conductive material. The upper electrodes UE1, UE2, and UE3 are formed of a metal material such as an alloy of magnesium and silver (MgAg). The upper electrodes UE1, UE2, and UE3 may be formed of a transparent conductive material such as ITO.

[0042] When the potential of the lower electrodes LE1, LE2, LE3 is relatively higher than the potential of the upper electrodes UE1, UE2, UE3, the lower electrodes LE1, LE2, LE3 correspond to anodes and the upper electrodes UE1, UE2, UE3 correspond to cathodes. Also, when the potential of the upper electrodes UE1, UE2, UE3 is relatively higher than the potential of the lower electrodes LE1, LE2, LE3, the upper electrodes UE1, UE2, UE3 correspond to anodes and the lower electrodes LE1, LE2, LE3 correspond to cathodes.

[0043] The organic layers OR1, OR2, and OR3 each include a plurality of functional layers and a light-emitting layer.

[0044] The subpixels SP1, SP2, and SP3 may further include capping layers for adjusting the optical properties of the light emitted from the light-emitting layers of the organic layers OR1, OR2, and OR3. Such capping layers may be provided between the upper electrode UE1 and the sealing layer 71, between the upper electrode UE2 and the sealing layer 72, and between the upper electrode UE3 and the sealing layer 73, respectively.

[0045] A common voltage is supplied to the partition 6. This common voltage is supplied to each of the first upper electrodes UE1a, UE2a, and UE3a in contact with the side surfaces of the lower portion 61. A pixel voltage is supplied to each of the lower electrodes LE1, LE2, and LE3 through the pixel circuits 1 included in the subpixels SP1, SP2, and SP3, respectively.

[0046] When a potential difference is created between the lower electrode LE1 and the upper electrode UE1, the light-emitting layer of the first organic layer OR1a emits light in the red wavelength range. When a potential difference is created between the lower electrode LE2 and the upper electrode UE2, the light-emitting layer of the first organic layer OR2a emits light in the green wavelength range. When a potential difference is created between the lower electrode LE3 and the upper electrode UE3, the light-emitting layer of the first organic layer OR3a emits light in the blue wavelength range.

[0047] As another example, the light-emitting layers of the organic layers OR1, OR2, and OR3 may emit light of the same color (e.g., white). In this case, the display device DSP may include color filters that convert the light emitted by the light-emitting layers into light of the colors corresponding to the subpixels SP1, SP2, and SP3. The display device DSP may also include a layer containing quantum dots that are excited by the light emitted by the light-emitting layers to generate light of the colors corresponding to the subpixels SP1, SP2, and SP3.

[0048] FIG. 4 is a diagram showing an example of the configuration of the display element 20. As shown in FIG. The lower electrode LE shown in Fig. 4 corresponds to each of the lower electrodes LE1, LE2, and LE3 in Fig. 3. The organic layer OR shown in Fig. 4 corresponds to each of the organic layers OR1, OR2, and OR3 in Fig. 3. The upper electrode UE shown in Fig. 4 corresponds to each of the upper electrodes UE1, UE2, and UE3 in Fig. 3.

[0049] The organic layer OR includes a carrier adjustment layer CA1, an emitting layer EM, and a carrier adjustment layer CA2. The carrier adjustment layer CA1 is located between the lower electrode LE and the emitting layer EM, and the carrier adjustment layer CA2 is located between the emitting layer EM and the upper electrode UE. The carrier adjustment layers CA1 and CA2 each include multiple functional layers. The following description will be given taking as an example a case where the lower electrode LE corresponds to the anode and the upper electrode UE corresponds to the cathode.

[0050] The carrier adjustment layer CA1 includes, as functional layers, a hole injection layer F11, a hole transport layer F12, an electron blocking layer F13, etc. The hole injection layer F11 is disposed on the lower electrode LE, the hole transport layer F12 is disposed on the hole injection layer F11, the electron blocking layer F13 is disposed on the hole transport layer F12, and the light-emitting layer EM is disposed on the electron blocking layer F13.

[0051] The carrier adjustment layer CA2 includes, as functional layers, a hole blocking layer F21, an electron transport layer F22, an electron injection layer F23, etc. The hole blocking layer F21 is disposed on the light-emitting layer EM, the electron transport layer F22 is disposed on the hole blocking layer F21, the electron injection layer F23 is disposed on the electron transport layer F22, and the upper electrode UE is disposed on the electron injection layer F23.

[0052] In addition to the above-mentioned functional layers, the carrier adjustment layers CA1 and CA2 may include other functional layers such as a carrier generation layer as necessary, or at least one of the above-mentioned functional layers may be omitted.

[0053] FIG. 5 is a diagram for explaining an example of a method for manufacturing the display device DSP. The manufacturing method shown here roughly includes a step of preparing a processing substrate that serves as a base for each of the subpixels SP1, SP2, and SP3 (step ST1), and a step of forming a first subpixel (step ST2). Note that the first subpixel here is any of the subpixels SP1, SP2, and SP3.

[0054] First, in step ST1, a processing substrate SUB is prepared on a substrate 10, which has formed thereon a lower electrode LE, a rib 5 having an opening AP overlapping with the lower electrode LE, and a partition wall 6 including a lower portion 61 arranged on the rib 5 and an upper portion 62 arranged on the lower portion 61 and protruding from the side of the lower portion 61.

[0055] Next, in step ST2, first, a first thin film is vapor-deposited on the processing substrate SUB (step ST21). The vapor deposition process of the first thin film will be described later. Then, a resist patterned into a predetermined shape is formed on the first thin film (step ST22). Then, the first thin film is etched using the resist as a mask (step ST23). Then, the resist is removed (step ST24). As a result, a first sub-pixel having a first thin film of a predetermined shape is formed.

[0056] Fig. 6 is a diagram for explaining the vapor deposition process of the first thin film shown in Fig. 5. The first thin film described here has an organic layer OR, an upper electrode UE, and a sealing layer 7. The organic layer OR also has multiple functional layers shown in Fig. 4.

[0057] First, a material for forming the hole injection layer F11 is evaporated onto the processing substrate SUB (step ST211). This forms the hole injection layer F11 in contact with the lower electrode LE. The lower electrode LE here corresponds to any one of the lower electrodes LE1, LE2, and LE3.

[0058] Thereafter, a material for forming the hole transport layer F12 is evaporated on the hole injection layer F11 (step ST212), thereby forming the hole transport layer F12 in contact with the hole injection layer F11.

[0059] Thereafter, a material for forming the electron blocking layer F13 is evaporated on the hole transport layer F12 (step ST213), thereby forming the electron blocking layer F13 in contact with the hole transport layer F12.

[0060] Thereafter, a material for forming the emitting layer EM is vapor-deposited on the electron-blocking layer F13 (step ST214), thereby forming the emitting layer EM in contact with the electron-blocking layer F13.

[0061] Thereafter, a material for forming the hole-blocking layer F21 is vapor-deposited on the light-emitting layer EM (step ST215), thereby forming the hole-blocking layer F21 in contact with the light-emitting layer EM.

[0062] Thereafter, a material for forming the electron transport layer F22 is evaporated on the hole blocking layer F21 (step ST216), thereby forming the electron transport layer F22 in contact with the hole blocking layer F21.

[0063] Thereafter, a material for forming the electron injection layer F23 is vapor-deposited on the electron transport layer F22 (step ST217). This forms the electron injection layer F23 in contact with the electron transport layer F22. The organic layer OR is formed by a series of steps from step ST211 to step ST217. The organic layer OR here corresponds to any one of the organic layers OR1, OR2, and OR3 described above.

[0064] Thereafter, a material for forming the upper electrode UE is vapor-deposited on the electron injection layer F23 (step ST218). As a result, the upper electrode UE is formed in contact with the electron injection layer F23 and the lower portion 61 of the partition wall 6, and covering the organic layer OR. The upper electrode UE here corresponds to any one of the upper electrodes UE1, UE2, and UE3 described above.

[0065] Thereafter, the sealing layer 7 is formed to cover the upper electrode UE and the partition wall 6 (step ST219). The sealing layer 7 here corresponds to any one of the sealing layers 71, 72, and 73 described above. A transparent cap layer (optical adjustment layer) may be deposited before forming the sealing layer 7. At least one of steps ST211 to ST213 and at least one of steps ST215 to ST217 may be omitted. In addition to steps ST211 to ST217, a step for forming a functional layer constituting an organic layer may be added.

[0066] Next, an example of a vapor deposition apparatus 100 that can be used in the above vapor deposition process will be described.

[0067] FIG. 7 is a diagram showing an example of a vapor deposition apparatus 100 according to this embodiment. The deposition apparatus 100 includes a stage 110 for placing the substrate to be processed SUB, a deposition head 120 facing the stage 110, a driving mechanism 130 for driving the deposition head 120, and a chamber 140. The chamber 140 is configured to accommodate the stage 110, the deposition head 120, the driving mechanism 130, etc., and to enable the interior to be evacuated.

[0068] 2, the deposition head 120 faces the stage 110 in the third direction Z. The drive mechanism 130 includes a scanning mechanism that moves the deposition head 120, which is ejecting vapor, along the second direction Y, and a moving mechanism that moves the deposition head 120 in the first direction X.

[0069] The deposition head 120 includes a deposition source 121, a plurality of nozzles 122, a plurality of sleeves 123, and a tilting mechanism .

[0070] The vapor deposition source 121 is configured to heat a material to generate vapor. The vapor deposition source 121 has a bottom surface 121A on the side facing the stage 110 in the third direction Z. The material to be heated is a material for forming an organic layer or a material for forming an upper electrode.

[0071] The multiple nozzles 122 are aligned in the first direction X and connected to the bottom surface 121A of the vapor deposition source 121. In the illustrated example, each of the nozzles 122 extends from the bottom surface 121A toward the stage 110 in the third direction Z. The multiple nozzles 122 are configured to eject vapor generated in the vapor deposition source 121 toward the stage 110 (or the processing substrate SUB on the stage 110).

[0072] The multiple sleeves 123 are formed to correspond to the multiple nozzles 122, are aligned in the first direction X, and are connected to the bottom surface 121A of the vapor deposition source 121. In the illustrated example, each of the sleeves 123 extends from the bottom surface 121A toward the stage 110 in the third direction Z. Each of the sleeves 123 is disposed so as to surround the nozzle 122. The sleeves 123 are detachable from the vapor deposition source 121.

[0073] Such a sleeve 123 regulates the vapor ejected toward the processing substrate SUB from the deposition head 120. The spread angle of the vapor ejected toward the processing substrate SUB from the deposition head 120 via the sleeve 123 is hereinafter referred to as the deposition angle.

[0074] The tilting mechanism 124 is configured to tilt the extension direction 122A of the nozzle 122 with respect to a normal 110A of the stage 110. In the drawing, the extension direction 122A is indicated by a dashed line, and the normal 110A is indicated by a dashed line.

[0075] In this embodiment, for example, in a first mode (narrow deposition angle mode) in which the deposition angle of the vapor ejected from the deposition head 120 is a first angle, a long sleeve 123 is connected to the deposition source 121. In a second mode (wide deposition angle mode) in which the deposition angle of the vapor ejected from the deposition head 120 is a second angle larger than the first angle, a short sleeve 123 is connected to the deposition source 121.

[0076] The part of the nozzle 122 that is closest to the stage 110 is referred to as the tip 122T of the nozzle 122, and the part of the sleeve 123 that is closest to the stage 110 is referred to as the tip 123T of the sleeve 123. In this case, with regard to the distance D along the third direction Z from the tip 122T of the nozzle 122 to the tip 123T of the sleeve 123, the distance Da in the first mode is greater than the distance Db in the second mode.

[0077] With respect to the length L along the third direction Z from the bottom surface 121A of the deposition source 121 to the tip 123T of the sleeve 123, the length La of the sleeve 123 applied in the first mode is longer than the length Lb of the sleeve 123 applied in the second mode.

[0078] The distance D can be freely set by adjusting the length L of the sleeve 123. As the distance D increases, the vapor ejected from the nozzle 122 is more restricted by the sleeve 123, improving the linearity of the vapor and decreasing the deposition angle. As the distance D decreases, the vapor ejected from the nozzle 122 is less restricted by the sleeve 123, improving the vapor's dissipation and increasing the deposition angle. In this way, by adjusting the length L of the sleeve 123, the deposition angle of the vapor ejected from the deposition head 120 toward the processing substrate SUB can be freely controlled.

[0079] 8 and 9 are other cross-sectional views of the deposition head 120 shown in FIG. 8 and 9 show a cross section of the deposition head 120 in a YZ plane defined by the second direction Y and the third direction Z. Although the sleeve 123 is not shown in FIGS. 8 and 9, the sleeve 123 may be provided in the deposition head 120.

[0080] The tilting mechanism 124 is configured to rotate, for example, the deposition source 121 integrated with the nozzle 122 within the YZ plane, and can tilt the extension direction 122A of the nozzle 122 with respect to the normal 110A of the stage 110. Note that the tilting mechanism 124 may be configured to rotate only the nozzle 122 within the YZ plane with respect to the fixed deposition source 121.

[0081] 8, an extension direction 122A of the nozzle 122 is substantially parallel to a normal line 110A of the stage 110. In other words, the angle formed between the extension direction 122A and the normal line 110A is 0°. 9, an extension direction 122A of the nozzle 122 is inclined with respect to a normal 110A of the stage 110. That is, the angle θA formed between the extension direction 122A and the normal 110A is an acute angle greater than 0°. In this case, the nozzle 122 is inclined so that its tip 122T faces in the opposite direction to the moving direction YA of the deposition head 120. The angle θA can be freely set by the tilting mechanism 124. That is, the angle θA can be freely set to an angle greater than or equal to 0°.

[0082] When the angle between extension direction 122A and normal line 110A in the example shown in FIG. 8 is defined as a first angle, and the angle between extension direction 122A and normal line 110A in the example shown in FIG. 9 is defined as a second angle, the second angle is greater than the first angle.

[0083] However, the spreading angle (deposition angle) θB of the vapor of the material M ejected from the deposition head 120 toward the processing substrate SUB is the same in the example shown in FIG. 8 and the example shown in FIG.

[0084] In this manner, with the nozzle 122 facing the processing substrate SUB on the stage 110, the deposition head 120 moves while ejecting vapor of the material M, and deposits the material M onto the processing substrate SUB. The movement direction YA of the deposition head 120 is parallel to the second direction Y, for example.

[0085] FIG. 10 is a plan view showing an example of a sleeve 123 connected to a vapor deposition source 121. As shown in FIG. The nozzle 122 is formed in a cylindrical shape extending in the third direction Z. The plurality of nozzles 122 are arranged in the first direction X at equal pitches. The sleeve 123 is formed in a cylindrical shape extending in the third direction Z. The sleeve 123 is arranged concentrically with the nozzle 122. The inner diameter of the sleeve 123 is larger than the outer diameter of the nozzle 122. The multiple sleeves 123 are arranged at equal pitches in the first direction X. The arrangement pitch of the sleeves 123 is equal to the arrangement pitch of the nozzles 122.

[0086] FIG. 11 is a plan view showing another example of the sleeve 123 connected to the vapor deposition source 121. As shown in FIG. The example shown in Fig. 11 differs from the example shown in Fig. 10 in that the sleeve 123 is formed in a lattice pattern. In other words, one nozzle 122 is surrounded by flat sleeves 123 arranged on all four sides.

[0087] 10 and 11, the deposition head 120 includes the nozzles 122 arranged in a row in the first direction X, but the deposition head 120 may include the nozzles 122 arranged in multiple rows. The shape of the sleeve 123 is not limited to the example shown in FIGS.

[0088] 12 is a diagram showing an example of a vapor deposition apparatus and a vapor deposition method according to this embodiment. The multiple chambers and elements housed in the chambers shown here can be considered as a single vapor deposition apparatus 100. First, the processing substrate SUB is prepared. The processing substrate SUB is obtained by forming the lower electrodes LE, the ribs 5, and the partition walls 6 on the substrate 10, as described above.

[0089] Subsequently, the substrate SUB to be processed is introduced into the chamber 1401 and placed on the stage 1101. The deposition head 1201 housed in the chamber 1401 is configured to deposit a material M1 onto the substrate SUB to be processed. In the deposition head 1201, a nozzle 1221 is surrounded by a sleeve 1231 having a length L1, and this sleeve 1231 is connected to the deposition source 1211. This sets the distance D1 between the tip of the nozzle 1221 and the tip of the sleeve 1231. The deposition head 1201 then ejects the vapor of the material M1 toward the processing substrate SUB while moving in the second direction Y. At this time, part of the vapor ejected from the nozzle 1221 is blocked by the sleeve 1231. The deposition head 1201 ejects the vapor of the material M1 at a deposition angle θ1. As a result, the material M1 is deposited on the processing substrate SUB.

[0090] Subsequently, the processing substrate SUB is introduced into the chamber 1402 and placed on the stage 1102. The deposition head 1202 housed in the chamber 1402 is configured to deposit material M2 on the processing substrate SUB on which material M1 has been deposited. In the deposition head 1202, a sleeve 1232 having a length L2 surrounds the nozzle 1222, and this sleeve 1232 is connected to the deposition source 1212. The length L2 is shorter than the length L1. This sets a distance D2 between the tip of the nozzle 1222 and the tip of the sleeve 1232. The distance D2 is shorter than the distance D1. The deposition head 1202 then ejects the vapor of material M2 toward the processing substrate SUB while moving in the second direction Y. At this time, part of the vapor ejected from the nozzle 1222 is blocked by the sleeve 1232. The deposition head 1202 ejects the vapor of material M2 at a deposition angle θ2. The deposition angle θ2 is different from the deposition angle θ1 and is greater than the deposition angle θ1 in this case. As a result, material M2 is deposited on the processing substrate SUB. Material M2 is deposited over a wider area than material M1, which was deposited earlier, and covers material M1.

[0091] Subsequently, the processing substrate SUB is introduced into the chamber 1403 and placed on the stage 1103. The deposition head 1203 housed in the chamber 1403 is configured to deposit the material M3 onto the processing substrate SUB on which the material M2 has been deposited. The deposition head 1203 does not have a sleeve. The deposition head 1203 then ejects the vapor of material M3 toward the processing substrate SUB while moving in the second direction Y. At this time, the deposition head 1203 ejects the vapor of material M3 at a deposition angle θ3. The deposition angle θ3 is different from the deposition angles θ1 and θ2. The deposition head 1203 does not have a sleeve to restrict the vapor ejected from the nozzle 1223, so the vapor spreads widely. For this reason, the deposition angle θ3 is greater than the deposition angle θ2. As a result, the material M3 is deposited on the processing substrate SUB. The material M3 is deposited over a wider area than the previously deposited material M2, covering the material M2.

[0092] In the example shown in FIG. 12, the extension direction of nozzle 1221 is parallel to the normal to stage 1101 , the extension direction of nozzle 1222 is parallel to the normal to stage 1102 , and the extension direction of nozzle 1223 is parallel to the normal to stage 1103 . Furthermore, the distance along the third direction Z from the stage 1101 to the nozzle 1221, the distance along the third direction Z from the stage 1102 to the nozzle 1222, and the distance along the third direction Z from the stage 1103 to the nozzle 1223 are all equal to each other, but may be different from each other.

[0093] FIG. 13 is a diagram for explaining the deposition angle when the first thin film is deposited. Here, the organic layer OR includes multiple functional layers and light-emitting layers, and includes a lower layer ORA adjacent to the lower electrode LE and an upper layer ORB adjacent to the upper electrode UE. The lower layer ORA is, for example, the hole injection layer, hole transport layer, light-emitting layer, etc. The upper layer ORB is, for example, the electron injection layer, electron transport layer, hole blocking layer, etc.

[0094] The vapor deposition process by the vapor deposition head 1201 corresponds to, for example, at least one of steps ST211 to ST214 in the vapor deposition process of the first thin film shown in FIG. The vapor of the material M1 is ejected while the deposition head 1201 moves in the second direction Y, thereby forming the lower layer ORA. At this time, part of the vapor heading toward the partition 6 at a deposition angle θ1 is blocked by the upper part 62. Therefore, the lower layer ORA adjacent to each other in the second direction Y across the partition 6 is separated by the partition 6 and is spaced apart from the lower part 61. The material M1 for forming the lower layer ORA is deposited on the upper part 62 of the partition 6. The deposition angle θ1 indicated by the solid line in the drawing is, for example, 55° to 65°.

[0095] The deposition process by the deposition head 1202 corresponds to, for example, at least one of steps ST215 to ST217 in the deposition process of the first thin film shown in FIG. The vapor of material M2 is ejected by the deposition head 1202 while moving in the second direction Y, thereby forming the upper layer ORBs. At this time, a portion of the vapor directed toward the partition wall 6 at a deposition angle θ2 is blocked by the upper portion 62. Therefore, the upper layer ORBs adjacent to each other in the second direction Y across the partition wall 6 are separated by the partition wall 6 and are spaced apart from the lower portion 61. Furthermore, material M2 for forming the upper layer ORBs is deposited on the upper portion 62 of the partition wall 6. Because the deposition angle θ2 is greater than the deposition angle θ1, material M2 is deposited over a wider area than material M1. Therefore, material M2 is also deposited in an area closer to the partition wall 6 than material M1. Therefore, the lower layer ORA is covered by the upper layer ORBs. The deposition angle θ2 indicated by the dotted line in the figure is, for example, 95° to 105°.

[0096] The vapor deposition process by the vapor deposition head 1203 corresponds to, for example, step ST218 in the vapor deposition process of the first thin film shown in FIG. The vapor of material M3 is ejected by the deposition head 1203 while moving in the second direction Y, thereby forming the upper electrode UE. At this time, the vapor toward the partition wall 6 at a deposition angle θ3 larger than the deposition angle θ2 is blocked by the upper portion 62, but some of the vapor reaches the lower portion 61. Therefore, the upper electrode UE adjacent to the partition wall 6 in the second direction Y is separated by the partition wall 6 and is in contact with the lower portion 61. In addition, material M3 for forming the upper electrode UE is deposited on the upper portion 62 of the partition wall 6. Since material M3 is deposited in an area closer to the partition wall 6 than material M2, the upper layer ORB is covered by the upper electrode UE. The deposition angle θ3 indicated by the dashed line in the figure is, for example, 115° to 125°.

[0097] On the rib 5, the lower layer ORA, the upper layer ORB, and the upper electrode UE each have a portion A, a portion B, and a portion C that are shaded by the partition wall 6 during deposition. These portions A, B, and C tend to be thinner than the portions that overlap the lower electrode LE, but because they are separated from the lower electrode LE, they do not contribute to light emission. From the viewpoint of contact between the upper electrode UE and the partition wall 6 and preventing undesired contact between portion A and portion C, it is desirable to set the deposition angles θ1 to θ3 so that portion A, portion B, and portion C are formed on the rib 5, respectively.

[0098] Regarding the widths of the portions A, B, and C in the second direction Y, the portion B is larger than the portion A, and the portion C is larger than the portion B. The portion B covers the portion A, and the portion C covers the portion B. The portions A and B are spaced apart from the partition wall 6, and the portion C is in contact with the partition wall 6.

[0099] As described above, according to this embodiment, the deposition head 120 can adjust the deposition angle. Therefore, each layer can be deposited at an optimal deposition angle. Furthermore, by controlling the deposition angle, the position of the edge of each layer can be shifted. Therefore, a thin film of a desired shape can be formed at a desired position without using a fine mask.

[0100] In the example described here, if the deposition head 1201 corresponds to the first deposition head, the length L1 corresponds to the first length, the material M1 corresponds to the first material, and the deposition angle θ1 corresponds to the first angle, then the deposition head 1202 or the deposition head 1203 corresponds to the second deposition head, the length L2 corresponds to the second length, the material M2 or the material M3 corresponds to the second material, and the deposition angle θ2 or the deposition angle θ3 corresponds to the second angle. Alternatively, if deposition head 1203 corresponds to the second deposition head, material M3 corresponds to the second material, and deposition angle θ3 corresponds to the second angle, deposition head 1201 or deposition head 1202 corresponds to the first deposition head, material M1 or material M2 corresponds to the first material, and deposition angle θ1 or deposition angle θ2 corresponds to the first angle. Alternatively, the deposition head 1201 may correspond to the first deposition head, the length L1 may correspond to the first length, the material M1 may correspond to the first material, and the deposition angle θ1 may correspond to the first angle, the deposition head 1202 may correspond to the second deposition head, the length L2 may correspond to the second length, the material M2 may correspond to the second material, and the deposition angle θ2 may correspond to the second angle, the deposition head 1203 may correspond to the third deposition head, the material M3 may correspond to the third material, and the deposition angle θ3 may correspond to the third angle.

[0101] For example, material M1 is a material for forming a lower layer ORA of the organic layer OR, material M2 is a material for forming an upper layer ORB of the organic layer OR, and material M3 is a material for forming an upper electrode UE.

[0102] Next, another manufacturing method will be described.

[0103] 14 is a diagram showing another example of a vapor deposition apparatus and a vapor deposition method according to this embodiment. The multiple chambers and elements housed in the chambers shown here can be considered as a single vapor deposition apparatus 100. First, the processing substrate SUB is prepared. The processing substrate SUB is obtained by forming the lower electrodes LE, the ribs 5, and the partition walls 6 on the substrate 10, as described above.

[0104] Next, the substrate SUB to be processed is introduced into the chamber 1401 and placed on the stage 1101. The deposition head 1201 housed in the chamber 1401 is configured to deposit a material M1 onto the substrate SUB to be processed. In the deposition head 1201, a nozzle 1221 is surrounded by a sleeve 1231 having a length L1, and the sleeve 1231 is connected to the deposition source 1211. This sets a distance D1 between the tip of the nozzle 1221 and the tip of the sleeve 1231. An extension direction 1221A of the nozzle 1221 is parallel to a normal 1101A of the stage 1101. In other words, the angle between the extension direction 1221A and the normal 1101A is 0°. The deposition head 1201 then ejects the vapor of the material M1 toward the processing substrate SUB while moving in the second direction Y. At this time, part of the vapor ejected from the nozzle 1221 is blocked by the sleeve 1231. The deposition head 1201 ejects the vapor of the material M1 at a deposition angle θ1. As a result, the material M1 is deposited on the processing substrate SUB.

[0105] Next, the processing substrate SUB is introduced into the chamber 1402 and placed on the stage 1102. The deposition head 1202 housed in the chamber 1402 is configured to deposit material M2 on the processing substrate SUB on which material M1 has been deposited. In the deposition head 1202, a sleeve 1232 having a length L2 surrounds the nozzle 1222, and this sleeve 1232 is connected to the deposition source 1212. The length L2 is shorter than the length L1. This sets a distance D2 between the tip of the nozzle 1222 and the tip of the sleeve 1232. The distance D2 is shorter than the distance D1. The extension direction 1222A of the nozzle 1222 is parallel to the normal 1102A of the stage 1102. In other words, the angle between the extension direction 1222A and the normal 1102A is equal to the angle between the extension direction 1221A and the normal 1101A, i.e., 0°. The deposition head 1202 then ejects the vapor of material M2 toward the processing substrate SUB while moving in the second direction Y. At this time, part of the vapor ejected from the nozzle 1222 is blocked by the sleeve 1232. The deposition head 1202 ejects the vapor of material M2 at a deposition angle θ2. The deposition angle θ2 is different from the deposition angle θ1 and is greater than the deposition angle θ1 in this case. As a result, material M2 is deposited on the processing substrate SUB. Material M2 is deposited over a wider area than material M1, which was deposited earlier, and covers material M1.

[0106] Subsequently, the processing substrate SUB is introduced into the chamber 1403 and placed on the stage 1103. The deposition head 1203 housed in the chamber 1403 is configured to deposit a material M3 on the processing substrate SUB on which the material M2 has been deposited. The deposition head 1203 does not have a sleeve, but may have a sleeve 1231 similar to that of the deposition head 1201. The tilting mechanism 1243 tilts the deposition head 1203 or the nozzle 1223. The extension direction 1223A of the nozzle 1223 is tilted with respect to the normal 1103A of the stage 1103. In other words, the angle between the extension direction 1223A and the normal 1103A is larger than the angle between the extension direction 1222A and the normal 1102A and the angle between the extension direction 1221A and the normal 1101A, and is an acute angle greater than 0°. The deposition head 1203 then ejects the vapor of material M3 toward the processing substrate SUB while moving in the second direction Y. At this time, the deposition head 1203 ejects the vapor of material M3 at a deposition angle θ3. The deposition angle θ3 is different from the deposition angles θ1 and θ2. In one example, the deposition angle θ3 is greater than the deposition angle θ1 and less than the deposition angle θ2. As a result, material M3 is deposited on the processing substrate SUB. Material M3 is deposited over a wider area than material M2, which was deposited earlier, and covers material M2.

[0107] FIG. 15 is a diagram for explaining the deposition angle when the first thin film is deposited. Here, the organic layer OR includes multiple functional layers and light-emitting layers, and includes a lower layer ORA adjacent to the lower electrode LE and an upper layer ORB adjacent to the upper electrode UE. The lower layer ORA is, for example, the hole injection layer, hole transport layer, light-emitting layer, etc. The upper layer ORB is, for example, the electron injection layer, electron transport layer, hole blocking layer, etc.

[0108] The vapor deposition process by the vapor deposition head 1201 corresponds to, for example, at least one of steps ST211 to ST214 in the vapor deposition process of the first thin film shown in FIG. The vapor of the material M1 is ejected while the deposition head 1201 moves in the second direction Y, thereby forming the lower layer ORA. At this time, part of the vapor heading toward the partition 6 at a deposition angle θ1 is blocked by the upper part 62. Therefore, the lower layer ORA adjacent to each other in the second direction Y across the partition 6 is separated by the partition 6 and is spaced apart from the lower part 61. The material M1 for forming the lower layer ORA is deposited on the upper part 62 of the partition 6. The deposition angle θ1 indicated by the solid line in the drawing is, for example, 55° to 65°.

[0109] The deposition process by the deposition head 1202 corresponds to, for example, at least one of steps ST215 to ST217 in the deposition process of the first thin film shown in FIG. The vapor of material M2 is ejected by the deposition head 1202 while moving in the second direction Y, thereby forming the upper layer ORBs. At this time, a portion of the vapor directed toward the partition wall 6 at a deposition angle θ2 is blocked by the upper portion 62. Therefore, the upper layer ORBs adjacent to each other in the second direction Y across the partition wall 6 are separated by the partition wall 6 and are spaced apart from the lower portion 61. Furthermore, material M2 for forming the upper layer ORBs is deposited on the upper portion 62 of the partition wall 6. Because the deposition angle θ2 is greater than the deposition angle θ1, material M2 is deposited over a wider area than material M1. Therefore, material M2 is also deposited in an area closer to the partition wall 6 than material M1. Therefore, the lower layer ORA is covered by the upper layer ORBs. The deposition angle θ2 indicated by the dotted line in the figure is, for example, 95° to 105°.

[0110] The vapor deposition process by the vapor deposition head 1203 corresponds to, for example, step ST218 in the vapor deposition process of the first thin film shown in FIG. The vapor of material M3 is ejected from the deposition head 1203 while moving in the second direction Y, thereby forming the upper electrode UE. Because the nozzle extension direction 1223A is inclined with respect to the normal 1103A of the stage (i.e., the deposition head 1203 is inclined), the vapor ejected from the deposition head 1203 is blocked by the upper portion 62, but some of the vapor reaches the lower portion 61. Therefore, the upper electrode UE adjacent to the partition wall 6 in the second direction Y is separated by the partition wall 6 and is in contact with the lower portion 61. Furthermore, material M3 for forming the upper electrode UE is vapor-deposited on the upper portion 62 of the partition wall 6. Because material M3 is vapor-deposited in an area closer to the partition wall 6 than material M2, the upper layer ORB is covered by the upper electrode UE. For example, the angle θA between the extension direction 1223A and the normal 1103A is 15° to 25°. Moreover, the deposition angle θ3 indicated by the dashed line in the figure is smaller than the deposition angle θ2, and is, for example, 75° to 85°.

[0111] Here, attention is focused on the downstream side (right side of the figure) of the movement direction YA of the deposition heads 1201 to 1203 relative to the partition wall 6. Above the rib 5, the lower layer ORA, the upper layer ORB, and the upper electrode UE have portions A, B, and C', respectively, which are shaded by the partition wall 6 during deposition.

[0112] Regarding the widths of the portions A, B, and C' in the second direction Y, the portion B is larger than the portion A, and the portion C' is smaller than the portion B. The portion B covers the portion A, and the portion C' covers the portion B. The portions A and B are spaced apart from the partition wall 6, and the portion C' is in contact with the partition wall 6.

[0113] On the other hand, let us focus on the upstream side (left side of the figure) of the movement direction YA of the deposition heads 1201 to 1203 relative to the partition wall 6. Above the rib 5, the lower layer ORA, upper layer ORB, and upper electrode UE each have part A, part B, and part C that are shaded by the partition wall 6 during deposition. Part A of the lower layer ORA, which sandwiches the partition wall 6, is formed almost symmetrically. Part B of the upper layer ORB, which sandwiches the partition wall 6, is formed almost symmetrically. Parts C and C' of the upper electrode UE, which sandwich the partition wall, are formed asymmetrically. Part C' is smaller than part C.

[0114] Regarding the widths of the portions A, B, and C in the second direction Y, the portion B is larger than the portion A, and the portion C is smaller than the portion B. The portion B covers the portion A, and the portion C exposes a part of the portion B. The portions A, B, and C are all spaced apart from the partition wall 6.

[0115] These portions A, B, C, and C' tend to be thinner than the portions overlapping the lower electrode LE, but because they are separated from the lower electrode LE, they do not contribute to light emission. The upper electrode UE contacts and is electrically connected to the partition wall 6 on the right side of the figure. Furthermore, because portion A is covered by portion B on the left and right sides of the figure, undesired contact between portion A and portion C is suppressed.

[0116] As described above, according to this embodiment, the deposition head 120 can adjust the deposition angle. Therefore, each layer can be deposited at an optimal deposition angle. Furthermore, by controlling the deposition angle, the position of the edge of each layer can be shifted. Therefore, a thin film of a desired shape can be formed at a desired position without using a fine mask.

[0117] Furthermore, the widths of the portions C and C' of the upper electrode UE are reduced, thereby reducing the width of the rib 5. This makes it possible to improve the aperture ratio or pixel resolution that contributes to display in the display element 20.

[0118] In the example described here, deposition head 1201 or deposition head 1202 corresponds to the first deposition head, stage 1101 or stage 1102 corresponds to the first stage, material M1 or material M2 corresponds to the first material, the angle between extension direction 1221A and normal 1101A or the angle between extension direction 1222A and normal 1102A corresponds to the first angle, deposition head 1203 corresponds to the second deposition head, stage 1103 corresponds to the second stage, material M3 corresponds to the second material, and the angle between extension direction 1223A and normal 1103A corresponds to the second angle. For example, material M1 is a material for forming a lower layer ORA of the organic layer OR, material M2 is a material for forming an upper layer ORB of the organic layer OR, and material M3 is a material for forming an upper electrode UE.

[0119] As described above, according to this embodiment, it is possible to provide a vapor deposition apparatus and a vapor deposition method that are capable of forming a desired thin film without using a fine mask.

[0120] All vapor deposition apparatuses and vapor deposition methods that can be implemented by a person skilled in the art by appropriately modifying the design based on the vapor deposition apparatus and vapor deposition method described above as embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0121] Within the scope of the concept of the present invention, a person skilled in the art may conceive of various modifications, and these modifications are also understood to fall within the scope of the present invention. For example, even if a person skilled in the art appropriately adds or deletes components or modifies the design of the above-described embodiment, or adds or omits steps or modifies conditions, these modifications are also included within the scope of the present invention as long as they maintain the gist of the present invention.

[0122] Furthermore, with regard to other effects brought about by the aspects described in the above embodiments, those that are clear from the description in this specification or that can be appropriately thought of by a person skilled in the art are naturally understood to be brought about by the present invention. [Explanation of symbols]

[0123] DSP…display device SP1, SP2, SP3... Sub-pixels 20... Display element (organic EL element) LE, LE1, LE2, LE3...lower electrode (anode) UE, UE1, UE2, UE3...Upper electrode (cathode) OR,OR1,OR2,OR3…Organic layer 10...Base plate 5...Rib 6...Bulkhead 61...Lower portion 62...Upper portion 7, 71, 72, 73...Sealing layers 100: deposition device 110: stage 130: driving mechanism 140: chamber 120... deposition head 121... deposition source 122... nozzle 123... sleeve 124... tilt mechanism SUB... processing substrate

Claims

1. a processing substrate is prepared on which a lower electrode, a rib having an opening overlapping with the lower electrode, and a partition wall including a lower portion disposed on the rib and an upper portion disposed on the lower portion and protruding from a side surface of the lower portion are formed; setting a spreading angle of vapor of a first material ejected from a first deposition head to a first angle, and depositing the first material on the processing substrate; setting a spreading angle of the vapor of the second material ejected from the second deposition head to a second angle greater than the first angle, and depositing the second material on the processing substrate on which the first material has been deposited; In the step of depositing the first material, a nozzle is surrounded by a sleeve of a first length in the first deposition head; In the step of depositing the second material, a nozzle in the second deposition head is surrounded by a sleeve having a second length shorter than the first length.

2. The vapor deposition method according to claim 1 , wherein a distance from a tip of the nozzle to a tip of the sleeve in the second vapor deposition head is shorter than a distance from a tip of the nozzle to a tip of the sleeve in the first vapor deposition head.

3. the first material forms a lower layer of an organic layer constituting an organic EL element, is vapor-deposited on the lower electrode, the rib, and the upper portion, and is spaced apart from the lower portion; The vapor deposition method according to claim 1 , wherein the second material forms an upper layer of an organic layer constituting an organic EL element, covers the first material, and is spaced apart from the lower layer.

4. a processing substrate is prepared on which a lower electrode, a rib having an opening overlapping with the lower electrode, and a partition wall including a lower portion disposed on the rib and an upper portion disposed on the lower portion and protruding from a side surface of the lower portion are formed; placing the processing substrate on a first stage; setting an angle between an extension direction of a nozzle of a first deposition head and a normal to the first stage to a first angle; ejecting vapor of a first material from the nozzle of the first deposition head to deposit the first material on the processing substrate; the processing substrate on which the first material has been deposited is placed on a second stage; an angle formed between an extension direction of a nozzle of a second deposition head and a normal to the second stage is set to a second angle larger than the first angle; and vapor of the second material is ejected from the nozzle of the second deposition head to deposit the second material on the processing substrate.

5. an extension direction of the nozzle of the first deposition head is parallel to a normal to the first stage; The vapor deposition method according to claim 4 , wherein an extension direction of the nozzle of the second vapor deposition head is inclined with respect to a normal to the second stage.

6. the first material forms an organic layer constituting an organic EL element, and is deposited on the lower electrode, the rib, and the upper portion, and is spaced apart from the lower portion; The vapor deposition method according to claim 4 , wherein the second material forms an upper electrode constituting an organic EL element, covers the first material, and is in contact with the lower portion.

7. The vapor deposition method according to claim 4 , wherein a spread angle of the vapor of the second material ejected from the second vapor deposition head is smaller than a spread angle of the vapor of the first material ejected from the first vapor deposition head.

8. The first stage and a first deposition head configured to deposit a first material onto a process substrate disposed on the first stage; The second stage and a second deposition head disposed on the second stage and configured to deposit a second material onto the processing substrate on which the first material has been deposited; Each of the first vapor deposition head and the second vapor deposition head includes: a vapor deposition source that heats a material to generate vapor; a nozzle connected to the evaporation source and configured to eject vapor generated in the evaporation source; a spreading angle of the vapor of the first material ejected from the first deposition head is set to a first angle; a spreading angle of the vapor of the second material ejected from the second deposition head is set to a second angle different from the first angle.

9. Each of the first vapor deposition head and the second vapor deposition head further includes: a sleeve surrounding the nozzle and extending beyond the tip of the nozzle toward the processing substrate; The vapor deposition apparatus according to claim 8 , wherein a length of the sleeve in the second vapor deposition head is shorter than a length of the sleeve in the first vapor deposition head.

10. The deposition apparatus of claim 9 , wherein the second angle is greater than the first angle.

11. The vapor deposition apparatus according to claim 8 , wherein the second vapor deposition head further includes a tilting mechanism that tilts the extension direction of the nozzle with respect to a normal to the second stage.

12. The vapor deposition apparatus according to claim 11 , wherein an extension direction of the nozzle of the first vapor deposition head is parallel to a normal to the first stage.

13. The deposition apparatus of claim 11 , wherein the first angle is greater than the second angle.

14. the first material is a material for forming a lower layer of an organic layer constituting an organic EL element, The vapor deposition apparatus according to claim 8 , wherein the second material is a material for forming an upper layer of an organic layer that constitutes an organic EL element.

15. the first material is a material for forming an organic layer that constitutes an organic EL element, The vapor deposition apparatus according to claim 8 , wherein the second material is a material for forming an upper electrode of an organic EL element.

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