Method and apparatus

Abstract

To provide a method and a device for correcting a positional deviation component between substrates in a laminated substrate.SOLUTION: The operation procedure of the manufacturing device includes a step S11 of processing at least one of a plurality of substrates, a step S13 of laminating the plurality of substrates to form a laminated substrate, and a step S16 of calculating a correction amount based on a positional deviation amount between the plurality of substrates of each of the plurality of laminated substrates, and at least one of the step of processing the substrate and the step of forming the laminated substrate includes a correction step of correcting at least one of the plurality of substrates to be laminated after the determination step with the correction amount.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a method and apparatus.

[0002] There is a technique for forming a laminated substrate by stacking a plurality of substrates. Patent Document 1: JP 2014-216496 A

[0003] Misalignment between substrates in a laminated substrate occurs due to various causes, and therefore, in order to achieve a predetermined alignment accuracy, it is necessary to correct various misalignment components. Summary of the Invention

[0004] A first aspect of the present invention provides a manufacturing method including a processing step of processing at least one of a plurality of substrates, a stacking step of stacking the plurality of substrates to manufacture a laminated substrate, and a determination step of determining a correction amount based on the amount of misalignment between each of the plurality of substrates in the laminated substrate, wherein at least one of the processing step and the stacking step includes a correction step of correcting at least one of the plurality of substrates to be stacked with the correction amount after the determination step.

[0005] A second aspect of the present invention provides a manufacturing method including a processing step of processing at least one of a plurality of substrates, the processing step including a correction step of correcting at least one of the plurality of substrates to be stacked after the determination by a correction amount determined based on the amount of misalignment between a plurality of substrates in each of a plurality of laminated substrates, each of which has a plurality of stacked substrates.

[0006] A third aspect of the present invention provides a manufacturing method including a lamination step of manufacturing a laminated substrate by laminating a plurality of substrates, the lamination step including a correction step of correcting at least one of the plurality of substrates to be laminated after the determination by a correction amount determined based on the amount of misalignment between each of the plurality of substrates in the laminated substrate.

[0007] A fourth aspect of the present invention provides a manufacturing apparatus comprising a processing unit that processes at least one of a plurality of substrates, and a stacking unit that stacks the plurality of substrates to manufacture a laminated substrate, wherein at least one of the processing unit and the stacking unit corrects at least one of the plurality of substrates to be stacked after determination by a correction amount determined based on the amount of positional deviation between each of the plurality of substrates in the laminated substrate.

[0008] A fifth aspect of the present invention provides a manufacturing apparatus comprising a processing unit that processes at least one of a plurality of substrates, the processing unit correcting at least one of the plurality of substrates to be stacked after determination by a correction amount determined based on the amount of misalignment between a plurality of substrates in each of a plurality of laminated substrates, each of which has a plurality of substrates stacked on top of each other.

[0009] A sixth aspect of the present invention provides a manufacturing apparatus including a lamination unit that manufactures a laminated substrate by stacking a plurality of substrates, wherein the lamination unit corrects at least one of the plurality of substrates to be stacked after determination by a correction amount determined based on the amount of misalignment between each of the plurality of substrates in the laminated substrate.

[0010] The above summary of the invention does not list all of the features of the present invention, and subcombinations of these features may also constitute inventions. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a block diagram showing the overall configuration of a manufacturing apparatus 10. FIG. [Figure 2] 3 is a flowchart showing the overall operation procedure of the manufacturing apparatus 10. [Figure 3] 4 is a flowchart showing the operation procedure of the processing unit 11. [Figure 4] 1 is a schematic diagram of a film forming apparatus 100. FIG. [Figure 5] FIG. 2 is a schematic diagram of a circuit forming device 200. [Figure 6] 4 is a flowchart showing the operation procedure of the stacking unit 13. [Figure 7] 5 is a schematic diagram of substrates 510 and 520. FIG. [Figure 8] 5 is a schematic diagram of a substrate holder 530 that holds a substrate 510. FIG. [Figure 9] 5 is a schematic diagram of a substrate holder 540 that holds a substrate 520. FIG. [Figure 10] FIG. 2 is a schematic cross-sectional view of a bonding device 300. [Figure 11] 10 is a flowchart showing the operation procedure of the joining device 300. [Figure 12] 10A to 10C are diagrams illustrating the operation of the joining device 300. [Figure 13] 10A to 10C are diagrams illustrating the operation of the joining device 300. [Figure 14] 10A to 10C are diagrams illustrating the operation of the joining device 300. [Figure 15] 10A to 10C are diagrams illustrating the operation of the joining device 300. [Figure 16] FIG. 2 is a schematic diagram illustrating a stacking process. [Figure 17] FIG. 10 is a schematic diagram illustrating a positional deviation component that occurs during the stacking process. [Figure 18] FIG. 10 is a schematic diagram illustrating a positional deviation component that occurs during the stacking process. [Figure 19] FIG. 10 is a schematic diagram illustrating a positional deviation component that occurs during the stacking process. [Figure 20] FIG. 10 is a schematic diagram showing the distribution of positional deviations. [Figure 21] FIG. 6 is a schematic cross-sectional view of a correction device 601. [Figure 22] FIG. 6 is a schematic plan view of a correction device 601. [Figure 23] FIG. 6 is a schematic diagram illustrating the operation of the correction device 601. DETAILED DESCRIPTION OF THE INVENTION

[0012] The present invention will be described below through embodiments of the invention. The following embodiments do not limit the scope of the invention. Not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0013] 1 is a block diagram showing the overall configuration of a laminated substrate manufacturing apparatus 10. The manufacturing apparatus 10 includes a processing unit 11, a second measuring unit 12, a laminating unit 13, a first measuring unit 14, and a control device 130.

[0014] The processing unit 11 includes a film-forming apparatus 100 and a circuit-forming apparatus 200. The film-forming apparatus 100 forms a functional layer or a sacrificial layer on a substrate using techniques such as CVD (Chemical Vapor Deposition). The circuit-forming apparatus 200 uses patterning techniques such as photolithography to pattern the functional layer or the sacrificial layer formed on the substrate to form elements, wiring, and the like. By repeating this operation, the processing unit 11 processes the substrate, which was initially in the form of a bare wafer, to form structures such as circuits, and repeatedly produces multiple substrates that become part of a laminated substrate. Note that in the following description, "processing" a substrate refers to forming structures such as wiring, circuits, and protective films on a substrate by performing processes such as film formation and patterning on the substrate. The term "substrate" as used herein includes not only single-crystal wafers of silicon, compound semiconductors, etc., but also substrates on which structures such as wiring, circuits, and protective films have already been formed.

[0015] An exposure device, an electron beam lithography device, a nanoimprint device, or the like can be used as the circuit forming device 200. The processing unit 11 may further include other equipment used when processing a substrate that is part of a laminated substrate using photolithography technology. Examples of such other equipment include a coater that applies resist to the substrate, and a wet or dry etching device that removes part of a structure on the substrate.

[0016] The film formation apparatus 100 can change the characteristics of the thin film to be formed by changing the film formation conditions, such as the substrate temperature, applied voltage, and the composition of the source gas. The circuit formation apparatus 200 can also change the shape and size of the pattern formed by patterning through optical or mechanical adjustments. Therefore, the film formation apparatus 100 and the circuit formation apparatus 200 can also be used as correction apparatuses for correcting substrates.

[0017] The film forming apparatus 100 and the circuit forming apparatus 200 have manufacturing errors in film formation and circuit formation. Furthermore, when an exposure apparatus is used as the circuit forming apparatus 200, a large area is patterned by repeatedly exposing with a single reticle. In such a case, even if the same reticle is used for exposure, different distortions may occur in the pattern formed for each shot. Therefore, even if the processing unit 11 processes substrates using the same recipe, individual differences may occur in the processed substrates. Such individual differences may also cause misalignment of the substrates in the laminated substrate.

[0018] The second measuring unit 12 measures the distortion of the substrate being carried into the lamination unit 13. The distortion of the substrate affects the amount of misalignment in the laminated substrate formed by laminating substrates. The second measuring unit 12 may be provided independently from the lamination unit 13, or may also serve as the measuring device used by the bonding apparatus 300 for alignment.

[0019] Here, substrate distortion appears as a displacement of the elements, wiring, and other structures on the substrate from their design coordinates, i.e., their design positions. Distortion occurring in the substrate includes planar distortion and three-dimensional distortion. Positional misalignment caused by distortion cannot be eliminated by moving the bonding surface in the planar direction (XY direction) or adjusting the rotation angle (θ) within the bonding surface.

[0020] Plane distortion is the displacement of a structure that occurs along the bonding surface of one substrate to another. Plane distortion includes linear distortion, in which the displacement relative to the design position can be expressed by a linear transformation, and nonlinear distortion, which is other distortion. An example of linear distortion is a magnification distortion in which the amount of displacement increases at a constant rate in a constant direction, for example, from the center toward the radial direction.

[0021] The magnification is a value expressed in ppm, obtained by dividing the deviation from the design value at the distance X from the center of the substrate by the distance X. Magnification includes isotropic magnification, in which the displacement vector from the design position has the same X and Y components, and anisotropic magnification, in which the displacement vector from the design position has components of different amounts. When manufacturing a laminated substrate by bonding substrates, the difference in the magnification of each of the two substrates with respect to their design positions is the amount of misalignment between the two substrates in the laminated substrate.

[0022] Furthermore, changes in the magnification of a substrate caused by distortion can be classified into initial magnification, planarization magnification, and bonding process magnification depending on the cause. The initial magnification is caused by stress generated in the process of forming elements, wiring, and other structures on a wafer, anisotropy due to the crystal orientation of the substrate, differences in rigidity of structures formed on the substrate, etc., and can be known before the substrates are bonded to form a laminated substrate.

[0023] On the other hand, the planarization magnification is caused by a change in magnification that occurs when a warped or distorted substrate is bonded to another substrate, causing a change in the warpage state. The planarization magnification is also caused by a change in the warpage state that occurs when a substrate is attached to a flat holding member for bonding. Furthermore, the bonding process magnification is a change in magnification that occurs when the state of the substrates changes during the bonding process. Therefore, the bonding process magnification may include at least a portion of the planarization magnification.

[0024] The changes in the planarization magnification and the bonding process magnification occur after the start of bonding the substrates and are fixed when the laminated substrate is formed. The planarization magnification and the bonding process magnification can be calculated from the state of distortion of the substrates, including the amount and shape of warpage, by investigating in advance the correlation between the state of the substrates before bonding, including information about deformation such as warpage, and the change in magnification when the substrates are flattened or bonded.

[0025] Linear distortion also includes orthogonal distortion. Orthogonal distortion is distortion in which, when the center of the substrate is the origin and the X-axis and Y-axis are set perpendicular to each other, the structure is displaced parallel to the X-axis from its design position, with the amount increasing the further the structure is from the origin along the Y-axis. The amount of displacement is equal in each of multiple regions parallel to the X-axis and crossing the Y-axis, and the absolute value of the displacement increases with distance from the X-axis. Furthermore, orthogonal distortion is such that the direction of displacement on the positive side of the Y-axis is opposite to the direction of displacement on the negative side of the Y-axis.

[0026] The three-dimensional distortion of a substrate is a displacement in a direction other than the direction along the bonding surface of the substrate, i.e., a direction intersecting the bonding surface. The three-dimensional distortion includes curvature that occurs in the entire or part of the substrate due to the entire or partial bending of the substrate. Here, "bending of the substrate" means that the substrate changes to a shape in which the surface of the substrate includes a point that does not lie on a plane specified by three points on the substrate.

[0027] Curvature refers to distortion of the substrate surface that forms a curved surface, and includes, for example, warpage of the substrate. In this embodiment, warpage refers to distortion that remains in the substrate when the influence of gravity is eliminated. Distortion of the substrate resulting from adding the influence of gravity to warpage is called deflection. Note that substrate warpage includes global warpage, in which the entire substrate bends with a generally uniform curvature, and local warpage, in which a local change in curvature occurs in a part of the substrate.

[0028] The lamination unit 13 has a bonding device 300 and a thinning device 400. The bonding device 300 has a function of aligning substrates based on alignment marks formed on the substrates, and a function of bonding the aligned substrates to form a laminated substrate.

[0029] The term "bonding" as used herein means permanently integrating two overlapping substrates so that a bonding strength exceeding a predetermined value is obtained. Furthermore, when the substrates to be bonded have electrical connection terminals, "bonding" also includes electrically connecting the connection terminals of the two substrates to each other and ensuring electrical continuity between the substrates.

[0030] Furthermore, when the substrates are bonded using a bonding method in which the bonding strength of the substrates is increased to a predetermined value by annealing or the like, or when the substrates are electrically connected to each other by annealing or the like, the state in which the two substrates are temporarily bonded before the annealing, i.e., the state of temporary bonding, may also be referred to as a bonded state. In this case, the temporarily bonded substrates may be separated and reused without being damaged.

[0031] The thinning apparatus 400 thins one surface of the laminated substrate formed by the bonding apparatus 300 or the substrates to be laminated by the bonding apparatus 300 by chemical mechanical polishing or the like. This allows a portion of the wiring, elements, etc. that was originally located inside the laminated substrate or single substrate to be positioned near the surface of the laminated substrate or substrate, or to be exposed on the surface.

[0032] This allows the circuitry inside the laminated substrate to be connected to a lead frame or the like. Light can also be incident on a light-receiving element formed in the substrate. Furthermore, by stacking substrates on top of a laminated substrate formed by stacking substrates, another substrate can be stacked on top of the laminated substrate to produce a laminated substrate with three or more layers. Note that thinning using the thinning device 400 may not be necessary in some cases.

[0033] The first measuring unit 14 measures the misalignment between the substrates that occurs in the laminated substrate formed by the laminating unit 13. The first measuring unit 14 may be provided to exclusively measure the misalignment of the laminated substrate, or may also serve as a measuring unit used by the bonding device 300 for alignment.

[0034] 1, the manufacturing apparatus 10 includes a control device 130. The control device 130 includes a common correction control unit 131, an individual correction control unit 132, and a determination unit 133.

[0035] The common correction control unit 131 instructs at least one of the processing unit 11 and the stacking unit 13 of correction conditions to perform correction on the substrate with the correction amount determined by the determination unit 133, which will be described later. That is, the common correction control unit 131 cooperates with at least one of the processing unit 11 and the stacking unit 13 to form a correction unit that performs steady correction with a fixed correction amount until the determination unit 133 determines a new correction amount.

[0036] In the correction performed under the control of the common correction control unit 131, certain correction conditions are repeatedly applied when processing multiple substrates or forming multiple laminated substrates. Therefore, the positional deviation in the finally formed laminated substrate is not necessarily reduced to below a predetermined threshold value only by the correction under the control of the common correction control unit 131.

[0037] Here, the correction conditions that the common correction control unit 131 instructs to at least one of the processing unit 11 and the stacking unit 13 include information specifying which of the processing unit 11 and the stacking unit 13 is to perform correction, and information regarding the amount of correction to be performed. The correction conditions also include information regarding the amount of correction, and the information regarding the amount of correction includes at least a portion of the amount of misalignment that has occurred in the already formed laminated substrate. Such a correction amount is determined by the determination unit 133.

[0038] Meanwhile, the individual correction control unit 132 determines correction conditions for reducing misalignment occurring in the laminated substrate formed in the lamination unit 13, and instructs the determined correction conditions to at least one of the processing unit 11 and the lamination unit 13. As a result, at least one of the processing unit 11 and the lamination unit 13 performs individual correction for each substrate under the control of the individual correction control unit 132. That is, the individual correction control unit 132 cooperates with at least one of the processing unit 11 and the lamination unit 13 to form a correction unit that reduces individual misalignment in each of the laminated substrates to a predetermined threshold or less.

[0039] Furthermore, the correction conditions that the individual correction control unit 132 instructs to at least one of the processing unit 11 and the lamination unit 13 are determined each time a substrate is processed or each time a laminated substrate is formed, based on the measurement results obtained from the second measurement unit. The individual correction control unit 132 may correct individual distortions caused by processing errors in the processing unit 11, individual differences in the lamination unit 13, etc., in addition to individual differences in the substrates themselves.

[0040] The correction performed by the individual correction control unit 132 corresponds to the difference between the misalignment that occurs individually in a specific pair of substrates that form one laminated substrate and the correction performed by the common correction control unit 131 with a predetermined correction amount. The amount of correction performed by the individual correction control unit 132 has a limit. Therefore, if there is room to increase or decrease the amount of correction performed by the common correction control unit 131, the amount of correction performed by the common correction control unit 131 may be determined so that the amount of correction remaining after the correction performed by the common correction control unit 131 falls within a range that allows the individual correction control unit 132 to completely correct the substrate.

[0041] Furthermore, if it is found after the correction performed by the common correction control unit 131 that a positional deviation occurs that is too large to be corrected by the correction performed by the individual correction control unit 132, a completely different measure may be considered, such as changing the combination of substrates to be joined. Furthermore, in addition to determining the amount of correction for each substrate, the individual correction control unit 132 may be provided with a determination unit 134 that determines whether or not individual correction is necessary for the distortion in each substrate, and may determine the necessity of individual correction for each substrate.

[0042] The determination unit 134 determines whether correction is necessary based on whether the measurement result acquired from the second measurement unit 12 is lower than a predetermined threshold. If it is predicted that the amount of misalignment in the laminated substrate formed by correction with the amount of correction executed by the common correction control unit 131 will not exceed the predetermined threshold, the individual correction executed by the individual correction control unit 132 may be omitted. Furthermore, if the measurement result acquired from the second measurement unit 12 is larger than the predetermined threshold, the individual correction control unit 132 may determine a correction method and amount of correction such that the amount of misalignment occurring in the laminated substrate becomes smaller than the threshold.

[0043] Here, the misalignment threshold for determining whether correction is necessary may be, for example, a predetermined allowable misalignment amount for the laminated substrate as a product. Alternatively, the threshold may be a misalignment amount within a range in which electrical continuity is established between the substrates in the formed laminated substrate. This is, for example, the amount of misalignment when all of the connection terminals between the substrates are in at least partial contact, and when sufficient bonding strength is obtained to maintain contact between the connection terminals.

[0044] Furthermore, in the manufacturing apparatus 10, for example, a plurality of film forming apparatuses 100, a plurality of circuit forming apparatuses 200, etc. may be provided in the processing section 11 to process substrates in parallel. Furthermore, a plurality of bonding apparatuses 300 and a plurality of thinning apparatuses 400 may be provided in the lamination section 13 of the manufacturing apparatus 10 to process lamination and thinning of substrates in parallel. Furthermore, by adjusting the number of apparatuses to be arranged, the processing speed can be made uniform throughout the entire manufacturing apparatus 10, thereby improving the manufacturing efficiency of laminated substrates.

[0045] Furthermore, since the film forming apparatus 100, the circuit forming apparatus 200, the bonding apparatus 300, and the thinning apparatus 400 can each operate independently, it is not necessary to locate all of the film forming apparatus 100, the circuit forming apparatus 200, the bonding apparatus 300, and the thinning apparatus 400 in the same location. For example, the processing unit 11 and the lamination unit 13 may be located in different facilities, and a substrate processed in the processing unit 11 may be transported to the lamination unit 13 to manufacture a laminated substrate.

[0046] However, the control device 130 controls both the processing unit 11 and the stacking unit 13 in an integrated manner. For this reason, for example, information detected in the stacking unit 13 may be used to control the processing unit 11. Therefore, it is preferable that the control device 130 be able to communicate with both the processing unit 11 and the stacking unit 13. Communication between the control device 130 and other devices may be via a public line or a dedicated line. Furthermore, information to be transmitted when processing a substrate in the processing unit 11 may be written onto the substrate, and information read from the substrate in the stacking unit 13 may be transmitted to the control device 130.

[0047] 2 is a flow chart outlining the procedure for manufacturing a laminated substrate using the manufacturing apparatus 10. In the manufacturing apparatus 10, first, the processing unit 11 processes a plurality of substrates (step S11). The number of substrates to be processed is sufficient to manufacture a plurality of laminated substrates each of which is processed by bonding at least two substrates together.

[0048] Next, under the control of the individual correction control unit 132, the substrates are individually corrected before being carried into the stacking unit 13 (step S12). The correction to be performed here is determined for each substrate by the individual correction control unit 132 with reference to the measurement results of the second measurement unit 12.

[0049] Next, the lamination unit 13 bonds the substrates using the bonding device 300 to form a laminated substrate (step S13). Furthermore, before the laminated substrate is carried out from the manufacturing apparatus 10, the first measurement unit 14 measures the amount of misalignment between the substrates in the formed laminated substrate (step S14).

[0050] By repeating the operations from step S11 to step S14 described above until a plurality of laminated substrates, for example, about two to ten laminated substrates, are formed (step S15: NO), the first measurement unit 14 can measure the amount of misalignment that has occurred for the plurality of laminated substrates formed by the lamination unit 13. When the amount of misalignment has been measured for a predetermined number of laminated substrates in this manner (step S15: YES), the determination unit 133 refers to the measurement results by the first measurement unit 14 and calculates and determines the amount of correction that the common correction control unit 131 will perform in at least one of the processing unit 11, the lamination unit 13, etc., in order to reduce the amount of misalignment in the laminated substrates (step S16).

[0051] In this embodiment, an example will be described in which the substrate is corrected both during processing of the substrate in the processing unit 11 and during bonding of the substrate in the lamination unit 13. In this case, the determination unit 133 determines the correction to be assigned to the processing unit 11 and the correction to be assigned to the lamination unit 13 from the common corrections determined in step S16, and outputs the corrections to the processing unit 11 and the lamination unit 13. The allocation of the correction in the processing unit 11 and the correction in the lamination unit 13 is based on predetermined allocation conditions, which are determined based on the type of correction, for example, whether to correct linear distortion or nonlinear distortion, and the amount of correction. The allocation conditions are set in advance based on experiments and simulations, and are stored in the memory of the determination unit 133.

[0052] Here, the correction amount that the determination unit 133 assigns to the common correction control unit 131 becomes the correction amount that is commonly applied to the formation of a plurality of laminated substrates when the laminated substrates are manufactured from this point onward. Therefore, first, the processing unit 11 starts processing the substrate, taking into account the correction executed by the common correction control unit 131 (step S17).

[0053] Next, the lamination unit 13 sets correction conditions for lamination, taking into account the correction executed by the common correction control unit 131 (step S18), and the substrates corrected based on the correction conditions are laminated (step S21). Steps S17 to S21 will be described in detail later.

[0054] The correction that the common correction control unit 131 executes in common on the multiple substrates may include correction of misalignment that occurs in the process of bonding the substrates in the stacking unit 13, and therefore may include correction of misalignment that has not yet occurred at this stage. Also, the correction that the common correction control unit 131 executes in common on the multiple substrates may include correction of misalignment that occurs when one of the substrates in the stacked substrates is thinned, and therefore may also include correction of misalignment that has not yet occurred at the bonding stage.

[0055] However, if the common correction control unit 131 executes a correction including an amount of misalignment that has not yet occurred, the individual correction control unit 132, which determines the amount of correction before the lamination unit 13, may execute a correction that cancels the correction executed by the common correction control unit 131. Therefore, when it is determined that misalignment that occurs in the bonding process is to be corrected before the substrates are carried into the lamination unit 13, it is desirable that the determination unit 133 also notify the individual correction control unit 132 of the amount of correction determined for the common correction control unit 131, so that the amount of correction is excluded from the target of correction that the individual correction control unit 132 executes.

[0056] Furthermore, since misalignment in a laminated substrate is a difference in the relative positions of the substrates, it is sufficient to correct one of the two substrates to be joined. However, if the amount of correction is large, both substrates to be joined may be corrected. Furthermore, before the determination unit 133 determines the amount of correction to be performed by the common correction control unit 131, an initial value determined by experiment, analysis, or the like may be set in the common correction control unit 131.

[0057] As described above, in the manufacturing apparatus 10, the determination unit 133 assigns to the common correction control unit 131 control of correction to be performed with a common correction amount for the manufacture of multiple laminated substrates. Therefore, the correction assigned to the common correction control unit 131 is preferably correction of distortion that causes misalignment that occurs stably or steadily in common for the multiple laminated substrates. In other words, it is desirable that the correction performed by the common correction control unit 131 is correction of distortion that includes at least a portion of the misalignment that occurs in the multiple laminated substrates and is highly reproducible for the manufacture of multiple laminated substrates.

[0058] Next, the operation of each unit of the manufacturing apparatus 10 will be described individually. FIG. 3 is a flow chart showing the operation procedure of the processing unit 11, and is also an example of step S17 in FIG. 2. The processing unit 11 first sets correction conditions to execute correction that should be executed when processing a substrate. The set correction conditions include the correction method to be executed in the processing unit and the correction amount when the correction method is executed (step S101). The correction conditions set here may be acquired from either the common correction control unit 131 or the individual correction control unit 132 of the control device 130, but in this embodiment, they are acquired from the common correction control unit 131.

[0059] Next, a wafer that will be the material for the substrate is loaded into the processing unit 11 for which the correction conditions have been set (step S102). The loaded wafer may be an unprocessed bare wafer, or a substrate in the process of being formed with a structure already formed thereon. Next, the processing unit 11 processes the substrate by forming structures such as elements and wiring on the wafer through film formation by the film formation device 100 and patterning by the circuit formation device 200, while executing the correction set by the control device 130 (step S103).

[0060] Next, the control device 130 checks whether there are other elements or wirings to be formed on the substrate on which the elements or wirings have been formed (step S104). If there are patterns to be formed (step S104: NO), the processing unit 11 repeats film formation by the film formation device 100 and patterning using the circuit formation device 200 or the like to form elements or wirings on the substrate.

[0061] If there are no more patterns to be formed on the substrate (step S104: YES), the control device 130 ends the processing of the substrate by the processing unit 11 and checks, for example, whether there are any more wafers remaining that belong to the same lot and on which the next circuit will be formed (step S105). If there are any more wafers remaining on which the next circuit will be formed (step S105: NO), the control device 130 loads the wafers into the processing unit 11 (step S102) and repeats the above steps S103 to S105.

[0062] In step S105, if it is determined that there are no wafers remaining on which to form circuits (step S105: YES), the control device 130 terminates the substrate processing process by the processing unit 11. In this manner, in the processing unit 11, a plurality of substrates are processed under the correction conditions set in step S101.

[0063] 4 is a schematic diagram showing an example of a film forming apparatus 100 in the processing section 11. The film forming apparatus 100 has a chamber 110 and high-frequency electrodes 122 and 124 arranged in the chamber 110.

[0064] The chamber 110 has a supply hole 112 through which the source gas flows in and an exhaust hole 114 through which the source gas is discharged. Of the pair of high-frequency electrodes 122, 124, the high-frequency electrode 124 arranged on the upper side in the figure also serves as a substrate holder. Thus, the film formation apparatus 100 forms a plasma CVD apparatus that can expose a substrate 510 to plasma of the source gas by supplying high-frequency power to the high-frequency electrodes 122, 124 while supplying the source gas into the chamber 110, thereby depositing a composition derived from the source gas on the surface of the substrate 510.

[0065] Here, by changing the flow rate of the source gas supplied to the film formation apparatus 100, the amount of high frequency power applied to the high frequency electrodes 122 and 124, the substrate temperature, etc., the distortion occurring in the substrate 510 also changes. Therefore, by appropriately setting the film formation conditions for the film formation apparatus 100, it is possible to correct the substrate at the film formation stage in the processing unit 11.

[0066] 5 is a schematic diagram showing an example of a circuit forming apparatus 200 of the processing unit 11. The circuit forming apparatus 200 has a light source 210, a reticle 220, a reduction optical system 230, and a moving stage 240. In the circuit forming apparatus 200, a substrate 510 is mounted on the moving stage 240.

[0067] In the circuit forming apparatus 200, irradiation light emitted from the light source 210 is irradiated onto the substrate 510 on the moving stage 240 through the reticle 220 and the reduction optical system. The reticle 220 has a light-shielding film or transparent holes corresponding to the pattern to be formed on the substrate, and converts the light emitted from the light source 210 into a light beam shaped to the shape of the pattern.

[0068] The reduction optical system 230 converges the light beam and irradiates it onto a portion of the substrate 510. As a result, the resist applied to the substrate 510 is exposed to light, and a resist mask having a shape corresponding to the pattern of the reticle 220 is formed on the surface of the substrate 510. Furthermore, by repeating the movement of the moving stage 240 and the exposure, it is possible to transfer many patterns of the reticle 220 onto the entire surface of the substrate 510. Note that a sacrificial layer such as a resist mask may be formed before or after the functional layer, depending on the characteristics of the structure to be formed on the substrate.

[0069] Using the resist mask thus formed, a functional layer can be formed on the surface of the substrate 510 by techniques such as lift-off and etching. Furthermore, by repeating film formation and patterning, a circuit region in which elements and wiring are mixed is formed on the substrate 510. Here, by changing the reduction magnification of the reduction optical system 230, the magnification of the circuit region formed on the substrate 510 can be adjusted.

[0070] Furthermore, by changing the amount of movement of the moving stage 240, it is possible to change the position where the circuit region is formed on the substrate 510. Furthermore, by tilting or deforming the reticle 220, it is possible to deform the pattern formed on the substrate 510. In this way, the correction conditions in the processing unit 11 can also be changed in the circuit forming apparatus 200.

[0071] However, it may be difficult to change the correction conditions for each wafer in detail in the circuit forming apparatus 200. Therefore, the amount of correction in the circuit forming apparatus 200 is often suitable for correction common to a plurality of substrates, which is instructed by the determination unit 133 to the common correction control unit 131.

[0072] In addition to the circuit forming device 200 including the electron beam lithography device, a dry etching device or the like can also be used in the patterning step in the processing unit 11. Furthermore, the processing unit 11 may also be provided with a coater for applying a resist material or the like, an ashing device for removing the resist material, or the like.

[0073] 6 is a flow chart showing the procedure for stacking substrates in stacking unit 13 of manufacturing apparatus 10, and is also an example of a stacking procedure including steps S18 and S21 of FIG. 2. First, a substrate processed in processing unit 11 is loaded into stacking unit 13 (step S201). Here, control device 130 checks whether the loaded substrate is the second substrate (step S202), and if the loaded substrate is not the second substrate (step S202: NO), control returns to step S201 to load another substrate.

[0074] If it is determined in step S202 that the loaded substrate is the second substrate (step S202: YES), when stacking the two loaded substrates, the control device 130 performs a common correction on at least one of the substrates (step S203). The correction conditions set in step S203 are the common correction in the stacking unit 13 determined in step S16 of Fig. 2, and may include information on both the correction method and the correction amount for the substrates.

[0075] Furthermore, the individual correction control unit 132 determines whether or not individual correction is required for each of the substrates processed by the processing unit 11, with reference to the measurement results of the second measurement unit 12 (step S207). Here, if the distortion generated in each of the substrates is lower than a predetermined threshold value (step S207: NO), the individual correction under the control of the individual correction control unit 132 is omitted, and the process proceeds to step S204.

[0076] In step S19, if it is determined that individual correction is required for the substrate (step S207: YES), the individual correction control unit 132 corrects the substrate individually (step S208), and then proceeds to step S204.

[0077] The correction method among the correction conditions to be set includes information on a method of deforming a pattern to be formed on a substrate, such as enlarging or reducing the magnification, narrowing or widening in a specific direction, and skewing, etc. The correction amount among the correction conditions includes a value indicating the degree of the magnification and the amount of deformation, etc.

[0078] The correction conditions set here are determined, for example, by measuring the positions of alignment marks on the substrates in the lamination unit 13. Therefore, the correction conditions set in the lamination unit 13 include correction conditions for correcting distortions specific to each substrate. Furthermore, the correction conditions set in the lamination unit 13 may include correction conditions acquired from the outside via the control device 130.

[0079] Next, the control device 130 aligns and bonds the substrates under the set correction conditions to form a laminated substrate (step S204). Furthermore, the control device 130 measures the misalignment between the substrates in the formed laminated substrate (step S205). Information regarding the misalignment obtained by this measurement is referenced by the processing unit 11 via the control device 130 and is used in setting the correction conditions in the processing unit 11 (step S101).

[0080] The laminated substrate thus formed is carried out from the lamination unit 13, and the control device 130 checks whether, for example, there are any substrates remaining that belong to the same lot but have not yet been laminated (step S206). If there are any substrates remaining that have not been laminated (step S205: NO), the control device 130 repeats the procedures from step S201 to step S206. If it is determined in step S205 that there are no substrates remaining that have not been laminated (step S205: YES), the control device 130 ends control of the lamination unit 13.

[0081] As a result, the amount of correction executed by the individual correction control unit 132 is reduced by the amount of correction executed by the common correction control unit 131. Note that the common correction in step S203 and the individual correction in step S208 may be executed simultaneously.

[0082] 7 is a schematic diagram of substrates 510, 520 processed in processing unit 11. Each of substrates 510, 520 has notches 514, 524, a plurality of circuit regions 516, 526, and a plurality of alignment marks 518, 528.

[0083] The circuit regions 516, 526 are periodically arranged on the surfaces of the substrates 510, 520 in the planar direction of the substrates 510, 520. Structures such as wiring, elements, and protective films are provided in each of the circuit regions 516, 526. Furthermore, connecting portions such as pads and bumps that serve as electrical connection terminals when one substrate 510 is stacked on the other substrate 520 are also arranged in the circuit regions 516, 526. These connecting portions are also structures formed on the surfaces of the substrates 510, 520.

[0084] The alignment marks 518, 528 are also an example of structures formed on the surfaces of the substrates 510, 520, and are arranged at predetermined relative positions with respect to the connection portions and the like in the circuit regions 516, 526. This allows the circuit regions 516, 526 to be aligned using the alignment marks 518, 528 as indicators.

[0085] In the substrates 510 and 520, scribe lines 512 and 522 exist between the multiple circuit regions 516 and 526. The scribe lines 512 and 522 are not structures but virtual cutting lines along which the laminated substrate is cut when dicing it into a laminated semiconductor device. The scribe lines 512 and 522 are also regions that disappear from the laminated substrate as saw margins during dicing. Therefore, alignment marks 518 and 528, which are used in the process of stacking the substrates 510 and 520 and are no longer needed after the laminated semiconductor device is completed, may be located on the scribe lines 512 and 522.

[0086] The laminated substrate formed by stacking the substrates 510 and 520 with other substrates is cut along scribe lines to separate the substrates into individual laminated semiconductor devices. The laminated substrate may also be formed by stacking a laminated substrate already formed by stacking the substrates 510 and 520 on another substrate.

[0087] 8 is a schematic cross-sectional view of a substrate holder 530 that holds the substrate 510 and is transported together with the substrate 510 when the substrate 510 is handled in the stacking unit 13. The substrate holder 530 has a thickness and diameter greater than those of the substrate 510, and has a flat chucking surface 532. The chucking surface 532 chucking the substrate 510 by an electrostatic chuck, a vacuum chuck, or the like, thereby integrating the substrate 510 and the substrate holder 530 and maintaining the substrate 510 in a flat state.

[0088] 9 is a schematic cross-sectional view of a substrate holder 540 that holds the substrate 520 and is transported together with the substrate 520 when the substrate 520 is handled in the stacking unit 13. The substrate holder 540 has a thickness and diameter greater than those of the substrate 520. The attraction surface 542 attracts the substrate 520 by an electrostatic chuck, a vacuum chuck, or the like, and integrates the substrate 520 and the substrate holder 540.

[0089] Furthermore, the shape of the adsorption surface 542 of the substrate holder 540 that adsorbs the substrate 520 is convex, with the center raised. The substrate 520 held by such a substrate holder 540 also has a protruding center. Therefore, above the dashed line A in the figure, the surface of the substrate 520 is enlarged, resulting in an increased magnification. Also, below the dashed line A in the figure, the surface of the substrate 520 is reduced, resulting in a relatively decreased magnification.

[0090] Therefore, when bonding the substrate 520 to another substrate, the increase in magnification of the bonding surface by the substrate holder 540 may also be a subject of correction. The increase in magnification of the bonding surface by the substrate holder 540 can also be used as a method of correcting the substrate 520. In this case, a plurality of substrate holders 540 with different curvatures of the suction surfaces 542 may be prepared, and the magnification of the bonding surface of the substrate 520 may be individually adjusted. Furthermore, a substrate holder 540 with a fixed curvature may be used as a device that performs common correction under the control of the common correction control unit 131.

[0091] Furthermore, in the above example, the suction surface 542 of the substrate holder 540 has a shape that rises in the center. However, by preparing a substrate holder 540 whose center is recessed relative to the peripheral edge of the suction surface 542 and holding the substrate 520 using this substrate holder 540, it is possible to reduce the magnification on the surface of the substrate 520.

[0092] 10 is a schematic cross-sectional view of the bonding apparatus 300. The bonding apparatus 300 includes a frame 310, an upper stage 322, and a lower stage 332.

[0093] The frame 310 has a horizontal bottom plate 312 and a horizontal top plate 316. The top plate 316 of the frame 310 supports an upper stage 322 that is fixed facing downward. The upper stage 322 is equipped with a vacuum chuck, an electrostatic chuck, or the like, and adsorbs and holds the substrate holder 530 that is brought in while holding the substrate 510.

[0094] Additionally, a microscope 324 and an activation device 326 are fixed to the side of the upper stage 322 on the top board 316. The microscope 324 observes the upper surface of the substrate 520 mounted on the lower stage 332. The activation device 326 generates plasma to activate the upper surface of the substrate 520 held on the lower stage 332.

[0095] An X-direction drive unit 331, a Y-direction drive unit 333, an elevation drive unit 338, and a rotation drive unit 339 are sequentially stacked on the bottom plate 312. The X-direction drive unit 331 moves parallel to the bottom plate 312, as indicated by an arrow X in the figure.

[0096] As indicated by the arrow Y in the figure, the Y-direction driving unit 333 moves on the X-direction driving unit 331 in parallel with the bottom plate 312 and in a direction different from that of the X-direction driving unit 331. By combining the operations of the X-direction driving unit 331 and the Y-direction driving unit 333, the lower stage 332 moves two-dimensionally in parallel with the bottom plate 312.

[0097] As indicated by arrow Z in the figure, the lifting / lowering driver 338 displaces the rotation driver 339 perpendicular to the bottom plate 312. The rotation driver 339 also rotates the lower stage 332 around an axis perpendicular to the bottom plate 312. The amount of movement of the lower stage 332 caused by the individual operations of the X-direction driver 331, the Y-direction driver 333, the lifting / lowering driver 338, and the rotation driver 339 is measured with high precision using an interferometer or the like (not shown).

[0098] The Y-direction drive unit 333, together with the elevation drive unit 338, rotation drive unit 339, and lower stage 332, supports the microscope 334 and activation device 336 located to the side of the lower stage 332. The microscope 334 and activation device 336 move together with the lower stage 332 in a direction parallel to the bottom plate 312 in accordance with the operations of the X-direction drive unit 331 and the Y-direction drive unit 333. Note that a swing drive unit that swings the lower stage 332 around a rotation axis parallel to the bottom plate 312 may be further provided between the lower stage 332 and the rotation drive unit 339.

[0099] In this way, microscope 334 observes the lower surface of substrate 510 held on upper stage 322. Activation device 336 generates plasma to activate the lower surface of substrate 510 held on upper stage 322.

[0100] 10, a substrate holder 530 having a flat suction surface 532 that holds a substrate 510 is held by the upper stage 322. A substrate holder 540 having a convex suction surface 542 that holds a substrate 520 is held by the lower stage 332. Furthermore, the microscopes 324 and 334 are focused on each other, and the control device 130 calibrates the relative positions of the microscopes 324 and 334.

[0101] 11 is a flow chart showing the procedure of the stacking operation in the bonding apparatus 300. First, the control device 130 uses the microscopes 324 and 334 to detect the positions of the multiple alignment marks 518 and 528 on the pair of substrates 510 and 520 that have been carried into the bonding apparatus 300 (step S301).

[0102] 12 is a schematic cross-sectional view showing the state of the bonding device 300 in step S301. As shown in the figure, the control device 130 operates the X-direction driving unit 331 and the Y-direction driving unit 333 to move the lower stage 332 and the microscope 334.

[0103] This enables the microscope 324 to observe the alignment mark 528 on the substrate 520. The control device 130 can accurately detect the position of the alignment mark 528 based on the amount of movement of the lower stage 332 until the alignment mark 528 to be observed reaches a predetermined position in the field of view of the microscope 324. Similarly, by observing the alignment mark 518 on the substrate 510 held on the upper stage 322 with the microscope 334, the control device 130 can accurately detect the position of the alignment mark 518 on the substrate 510.

[0104] The microscopes 324, 334 as described above can observe the alignment marks 518, 528 through the substrates 510, 520 even after the substrates 510, 520 are stacked to form a laminated substrate. Therefore, the microscopes 324, 334 may be used as the first measurement unit 14 in the manufacturing apparatus 10. In that case, after the substrates 510, 520 are stacked by the bonding apparatus 300, the positional deviation in the laminated substrate can be measured directly within the bonding apparatus 300.

[0105] Next, the control device 130 calculates the relative positions of the substrates 510 and 520 based on the positions of the alignment marks 518 and 528 detected in step S301 (step S302). That is, the control device 130 calculates the relative positions of the substrates 510 and 520 by detecting the positions of the alignment marks 518 and 528 of the substrates 510 and 520 using the microscopes 324 and 334, whose initial relative positions are known.

[0106] As a result, when aligning the substrates 510 and 520, the relative movement amount of the substrates 510 and 520 can be calculated so that the positional misalignment between corresponding alignment marks 518 and 528 on the substrates 510 and 520 is below a threshold, or so that the positional misalignment between corresponding circuit areas 516 and 528 or connection parts between the substrates 510 and 520 is below a threshold.

[0107] Next, the control device 130 causes the activation devices 326 and 336 to scan the surfaces of the substrates 510 and 520 (step S303). FIG. 13 is a schematic cross-sectional view showing the state of the bonding device 300 in step S303. As shown in the figure, the control device 130 operates the activation devices 326 and 336 to generate plasma, while moving the lower stage 332 to expose the surfaces of the substrates 510 and 520 to the plasma. This highly cleans the bonding surfaces of the substrates 510 and 520, increasing their chemical activity.

[0108] In addition to plasma exposure, the bonding surfaces of the substrates 510 and 520 can also be activated by sputter etching using an inert gas, an ion beam, or a fast atom beam. When using an ion beam or fast atom beam, the entire bonding apparatus 300 is placed under reduced pressure. The substrates 510 and 520 can also be activated by ultraviolet irradiation, an ozone asher, or the like. Furthermore, the surfaces of the substrates 510 and 520 may be activated by chemically cleaning them using, for example, a liquid or gas etchant. After activating the surfaces of the substrates 510 and 520, the surfaces of the substrates 510 and 520 may be hydrophilized using a hydrophilization device.

[0109] In this embodiment, the activation devices 326 and 336 are provided inside the bonding apparatus 300, but they may be disposed in a location separate from the bonding apparatus 300, and the activated substrates 510 and 520 may be carried into the bonding apparatus 300. Furthermore, there may be cases where the substrates 510 and 520 can be bonded by activating one of the bonding surfaces of the substrates 510 and 520 without activating the other.

[0110] Next, the control device 130 aligns the substrates 510, 520 (step S304). FIG. 14 is a schematic cross-sectional view showing the state of the bonding device 300 in step S304. As shown in the figure, the alignment of the substrates 510, 520 is performed by moving the lower stage 332 by an amount based on the relative positions of the substrates 510, 520 detected in step S301, so that the amount of misalignment of the alignment marks 518, 528 on the substrates 510, 520 is kept below a threshold. At this stage, misalignment components that could not be eliminated by the movement (XY) and rotation (θ) of the lower stage 332 are subject to correction.

[0111] Once the substrates 510 and 520 are aligned, the control device 130 brings portions of the substrates 510 and 520 into contact with each other to form a starting point for bonding (step S305). Figure 15 is a schematic cross-sectional view showing the state of the bonding device 300 in step S305. As shown in the figure, the control device 130 operates the lifting / lowering drive unit 338 to bring portions of the bonding surfaces of the substrates 510 and 520 into contact with each other, thereby forming a starting point for bonding.

[0112] 16 is a diagram schematically illustrating the formation of starting point C on substrates 510 and 520 to be joined. As described with reference to FIG. 9, when substrate 520, which has a protruding center due to the shape of substrate holder 540, is brought close to and into contact with flat substrate 510 held by flat substrate holder 530, substrates 510 and 520 first come into contact at a portion near the center, forming starting point C.

[0113] Thereafter, when one of the substrate holders 530, 540, for example, the substrate holder 530, releases the suction of the substrate 510, the contact area between the substrates 510, 520 expands from the initial central contact area toward the periphery, and eventually the entire substrates 510, 520 come into contact. In this way, by first bringing the substrates 510, 520 into contact at their respective portions and then expanding the contact area toward the periphery, it is possible to prevent air bubbles and the like from remaining between the substrates 510, 520 during the process of stacking the substrates 510, 520.

[0114] As described above, the surfaces of the substrates 510 and 520 are activated, so that the substrates 510 and 520 are bonded together by intermolecular forces in the contacting regions. Thus, starting points for bonding are formed in parts of the substrates 510 and 520.

[0115] Next, the control device 130 releases one of the substrates 510, 520, for example, the substrate 510 held by the upper stage 322, from the substrate holder 530 (step S306). This generates a bonding wave in which the bonding regions of the substrates 510, 520 gradually expand toward the edges of the substrates 510, 520, and eventually the entire substrates 510, 520 are bonded.

[0116] After releasing the substrate 510 in step S306, the control device 130 monitors the expansion of the bonding area. As a result, for example, when the expanding bonding area reaches the edge of the substrates 510, 520, it is detected that the bonding of the substrates 510, 520 is complete (step S307: YES). In other words, the control device 130 fixes the lower stage 332 and continues expanding the bonding area until the bonding of the substrates 510, 520 is complete (step S307: NO).

[0117] As described above, in the process of expanding the contact area between the substrates 510 and 520, the control device 130 may partially or gradually release the substrate 510 from the substrate holder 530. Alternatively, the bonding of the substrates 510 and 520 may proceed by releasing the substrate 520 on the lower stage 332 without releasing the substrate 510 on the upper stage 322.

[0118] Furthermore, it is also possible to release both of the two substrates 510, 520. Furthermore, it is also possible to bond the substrates 510, 520 by bringing the upper stage 322 and the lower stage 332 closer to each other while the substrates 510, 520 are held by both the upper stage 322 and the lower stage 332.

[0119] A new misalignment may occur during the bonding process of the substrates 510 and 520, which involves the generation of the bonding wave as described above. The process of generating such a misalignment will be described below with reference to FIGS.

[0120] 17 shows an enlarged view of a region Q near a boundary K between a contact region where the substrates 510 and 520 have already come into contact and a non-contact region where the substrates 510 and 520 are not yet in contact and will come into contact during the bonding process in the bonding apparatus 300. As shown in the figure, as the contact region of the two overlapping substrates 510 and 520 expands in area from the center toward the periphery, the boundary K moves from the center toward the periphery of the substrates 510 and 520. Near the boundary K, the substrate 510, which has been released from the hold by the substrate holder 530, elongates. Specifically, at the boundary K, the substrate 510 expands on the lower surface side of the substrate 510 in the figure relative to the central surface in the thickness direction of the substrate 510, and the substrate 510 contracts on the upper surface side of the substrate 510 in the figure.

[0121] As a result, as shown by the dotted line in the figure, the outer edge of the region of substrate 510 bonded to substrate 520 is distorted as if the magnification of circuit region 516 on the surface of substrate 510 with respect to the design specifications has been enlarged relative to substrate 520. As a result, as shown by the deviation of the dotted line in the figure, a positional deviation occurs between lower substrate 520 held by substrate holder 540 and upper substrate 510 released from substrate holder 530 due to the difference in the amount of expansion of substrate 510, i.e., the magnification.

[0122] 18, when the substrates 510 and 520 come into contact and are bonded together while the deformation amounts are different, the enlarged magnification of the substrate 510 is fixed. Furthermore, as shown in Fig. 19, the amount of elongation of the substrate 510 fixed by bonding accumulates and increases as the boundary K moves to the outer periphery of the substrates 510 and 520.

[0123] 20 is a diagram showing the distribution of positional misalignment components due to the difference in magnification between the two substrates 510 and 520 that make up the laminated substrate 550. The misalignment shown in the figure has a misalignment amount that gradually increases radially in the planar direction from the center point of the laminated substrate 550. Therefore, the difference in magnification across the substrates 510 and 520 becomes apparent.

[0124] The magnitude of misalignment that occurs during the bonding process as described above can be predicted based on physical quantities such as the rigidity of the substrates 510 and 520 to be bonded and the viscosity of the atmosphere sandwiched between the substrates 510 and 520. Furthermore, misalignment caused by such factors will steadily occur when multiple laminated substrates 550 are bonded, provided that the specifications of the substrates 510 and 520 to be bonded and the bonding conditions of the bonding device 300 are constant. Therefore, when multiple laminated substrates 550 are bonded, all of the laminated substrates 550 can be effectively corrected using common correction conditions instructed by the common correction control unit 131.

[0125] 20 also occurs when there is a difference in magnification between the substrates 510 and 520 due to an error in the optical system during patterning using the circuit forming apparatus 200. In other words, when the first measurement unit 14 constantly measures the misalignment caused by the difference in magnification in the laminated substrate 550, the circuit forming apparatus 200 optically changes the magnification of the pattern formed by, for example, an exposure device under control according to the correction conditions instructed by the common correction control unit 131. This allows multiple laminated substrates 550 to be corrected with a common correction amount.

[0126] Furthermore, exposure tools may require multiple exposures to form a single layer. In such cases, adjusting the spacing between exposure shots or chips on the wafer allows structures to be positioned to offset the initial magnification or distortion of the substrates that occurs during bonding. Furthermore, if the position of a structure on the substrate 510, which is released from the substrate holder during bonding, is displaced due to distortion during bonding, exposure conditions are set so that the structure is formed on the substrate 520, which is not released from the substrate holder during bonding, at a position corresponding to the position of the structure on the substrate 510 after the displacement. This allows the amount of misalignment due to the difference in distortion between the wafers to be reduced below a predetermined threshold. When an exposure tool is used as the circuit formation tool 200, the magnification component, orthogonal component, and nonlinear component of the distortion can be individually corrected. Thus, correction by the exposure tool includes adjusting the exposure position on at least one of the substrates so that the amount of misalignment when the two substrates 510 and 520 are bonded is below a threshold.

[0127] The amount of deformation of the substrate 510, which causes the misalignment described with reference to Figures 17 to 20, depends on the rigidity of the substrate 510. Therefore, if rigidity distribution occurs in the substrate 510 due to the crystalline anisotropy of the wafer, the crystalline anisotropy is also reflected in the change in magnification shown in Figure 20. Therefore, correction cannot be made by simply correcting the magnification. Furthermore, when bonding substrates using wafers with crystalline anisotropy, alignment may be required during bonding, even for bare wafers with no structures, in order to suppress the influence of the rigidity distribution.

[0128] 17 to 20, one of the substrates 510, 520 to be joined, i.e., the upper substrate 510 in the above example, is released from the hold by the substrate holder 530 during the joining process. Therefore, when correcting the magnification of the substrate 520 based on the shape of the chucking surface 542 of the substrate holder 540, the correction is performed on the substrate that is not released from the hold.

[0129] In the series of steps described above for manufacturing the laminated substrate 550, the misalignment that occurs in the laminated substrate 550 includes a component caused by the initial strain of each of the substrates 510 and 520 and a component caused by the strain that occurs during the bonding process. Here, the initial strain that occurs in the individual substrates 510 and 520 can be detected individually using the microscopes 324 and 334 in the bonding device 300. Therefore, by subtracting the initial strain of each of the substrates 510 and 520 from the misalignment measured by the first measuring unit 14 from the laminated substrate 550, the strain component that occurs during the bonding process can be calculated.

[0130] For each of the calculated distortion components, the determining unit 133 assigns distortions that commonly appear on a plurality of substrates to the common correction control unit 131, thereby reducing the load of corrections executed under the control of the individual correction control unit 132. Since the corrections executed by the individual correction control unit 132 are executed, for example, in the stacking unit 13, reducing the load on the individual correction control unit 132 can speed up processing in the stacking unit 13.

[0131] Therefore, the determination unit 133 may calculate the variation in distortion between the individual substrates 510, 520 as, for example, 3σ (σ is standard deviation) for each of the distortion components occurring during the bonding process and the initial distortion components of the respective substrates 510, 520. This allows the degree of distortion reproducibility to be evaluated, and the determination unit 133 can then use a predetermined threshold to determine items to be assigned to the common correction control unit 131 and corrected in common in the manufacture of multiple laminated substrates 550.

[0132] For example, misalignment components resulting from differences in magnification of the substrates often include components that appear in common for substrates 510 and 520 of the same lot processed by the same processing unit 11, or for laminated substrates 550 of the same lot laminated using the same lamination unit 13. Therefore, common components of distortion that manifest as misalignment can be efficiently corrected by the control of the common correction control unit 131.

[0133] That is, the correction that the common correction control unit 131 executes commonly on the multiple substrates is executed with the correction amount determined by the determination unit 133 based on the positional deviation measured for some of the initially manufactured laminated substrates 550 among the multiple laminated substrates 550 to be manufactured. Therefore, for the common correction executed by the common correction control unit 131, it is possible to omit measurements on the individual substrates 510, 520 or laminated substrate 550, thereby reducing the number of steps required for executing the correction. Furthermore, the individual correction control unit 132 only needs to correct the difference between the correction executed by the common correction control unit 131 and the individual distortions of the substrates 510, 520, and therefore the load required for the correction by the individual correction control unit 132 can be reduced.

[0134] The determination of the correction amount provided to the common correction control unit 131 by the determination unit 133 is not limited to one time. Even after the determination unit 133 has once determined the correction amount, the determination unit 133 may continue measurements by the common correction control unit 131 and periodically update the correction amount. This can further improve the efficiency of the common correction executed by the common correction control unit 131. In addition, by storing the correction conditions and their effects instructed by the common correction control unit 131 in the control device 130, the accuracy of the correction by the common correction control unit 131 can be improved as the operation of the manufacturing apparatus 10 increases.

[0135] Furthermore, it goes without saying that the misalignment that occurs in the laminated substrate 550 is not limited to that caused by the difference in magnification, but also includes misalignment components caused by many factors, such as the quality of the wafers that will become the substrates 510 and 520, crystalline anisotropy and initial distortion, the thermal history and pressure history when processing the substrates 510 and 520, the shapes of the substrate holders 530 and 540 used in the lamination unit 13, and the characteristics of the bonding device 300 and thinning device 400 in the lamination unit 13.

[0136] Therefore, the determination unit 133 may refer not only to the measurement unit of the first measurement unit 14 but also to the manufacturing conditions in the processing unit 11 and the bonding conditions in the lamination unit 13, and determine the equipment to perform the correction and the correction amount in accordance with the instructions of the common correction control unit 131. Furthermore, the determination unit 133 may acquire information on the distortion of the substrates 510 and 520 from an external database or the like, and determine the correction amount taking this information into consideration.

[0137] Furthermore, if the manufacturing apparatus 10 is provided with a plurality of processing units 11 and stacking units 13 and a plurality of manufacturing apparatuses 10 are operating, the accuracy and efficiency of the decision can be improved by mutually referencing the measurement results of the first measuring unit 14 and the second measuring unit 14 and storing the measurement results in a common database. In this case, for example, even if the processing units 11, stacking units 13, control devices 130, etc. that form the manufacturing apparatus 10, or the plurality of manufacturing apparatuses 10, are not operating in the same location, if information can be shared via a communication line, the decision units 133 of the plurality of manufacturing apparatuses 10 can share information with each other and improve the accuracy of the decision.

[0138] Furthermore, by feeding back to the processing unit 11 information about the distortion components of the substrates 510, 520 detected by the lamination unit 13 in relation to the alignment of the substrates, it is possible to correct the individual tendencies of the film forming apparatus 100 and the circuit forming apparatus 200. Furthermore, by storing information about distortions and the like that occur in the individual processing units 11 in a common database, the determination unit 133 can determine correction conditions that reflect the tendencies of the processing unit 11 in addition to the measurement results acquired from the first measurement unit 14, the second measurement unit 12, etc.

[0139] Furthermore, when a plurality of manufacturing apparatuses 10 are provided, or when a plurality of processing units 11 and stacking units 13 are provided within the manufacturing apparatus 10, the determination unit 133 may determine the correction amount for a distortion component that occurs in common among the plurality of devices. In this case, it is sufficient to provide one determination unit 133 for the plurality of devices.

[0140] When laminated substrate 550 is produced by bonding substrates in lamination unit 13, distortions to be corrected to suppress misalignment between substrates 510 and 520 in laminated substrate 550 include the following three types. (A) Distortion occurring during the bonding process in the laminated part 13. (B) Distortion caused in the substrate 510 by processing before bonding. (C) Distortion caused in the substrate 520 by processing before bonding.

[0141] Of the above distortions (A), (B), and (C), substrate distortions (B) and (C) can be detected individually during the alignment process in bonding apparatus 300. The sum of distortions (A), (B), and (C) can be detected by measuring the misalignment of substrates 510 and 520 in fabricated laminated substrate 550. Therefore, distortions (A), (B), and (C) can be detected individually.

[0142] When a plurality of laminated substrates 550 are fabricated, the determination unit 133 in the manufacturing apparatus detects components that steadily appear among the distortions (A), (B), and (C) and determines the amount of correction to correct the components. By setting at least one of the parameters for processing the substrates 510 and 520 in the processing unit 11 and the initial setting values ​​for bonding the substrates 510 and 520 by the lamination unit 13 so that the determined amount of correction can be used as a common amount of correction, the amount of correction for each individual laminated substrate 550 in the bonding apparatus 300 can be reduced.

[0143] Here, if all of the above correction amounts are allocated to one substrate 510 and correction is performed during a processing stage such as exposure in an exposure apparatus, misalignment between the substrates 510 and 520 in the laminated substrate 550 formed by lamination is suppressed. However, the distortion (C) in the other substrate 520, which was not corrected, remains as is, and a distortion of a magnitude corresponding to the distortion (C) remains in the substrate 510. For this reason, when the substrate 510 side of the fabricated laminated substrate 550 is thinned and another substrate is further laminated thereon, or when some kind of structure is formed on the surface of the laminated substrate 550, a correction is required to cause a distortion corresponding to the remaining distortion (C) in the other substrate and structure.

[0144] All of the above correction amounts may be allocated to the other substrate 520 and corrected at the processing stage, and another substrate may be stacked on substrate 510 in the fabricated laminated substrate 550, or some structure may be formed on the surface of laminated substrate 550. In this case, distortions (A) and (B) remain in substrate 510. Therefore, when another substrate is stacked on substrate 510, the other substrate may be bonded without correction, provided that a distortion occurs in the other substrate such that the difference between the distortion and the sum of distortions (A) and (B) is equal to or less than the threshold value.

[0145] Furthermore, for example, if the distortion (C) in the substrate 520 is sufficiently small, the distortions (A) and (B) of the substrate 510, which has a larger distortion (B), may be corrected in the processing stage before the substrates 510 and 520 are bonded together. In this case, the distortion (C) is not corrected, but the distortion of the entire laminated substrate 550 coincides with the relatively small distortion (C). Therefore, when thinning the laminated substrate 550 thus fabricated, it is preferable to thin the substrate 510 side that was corrected in the processing stage.

[0146] Furthermore, by correcting the distortion (B) of one substrate 510 and the distortion (C) of the other substrate 520 in the processing stage, the substrates 510 and 520 can be bonded together without considering misalignment due to the distortions (B) and (C) of the individual substrates 510 and 520, thereby producing a laminated substrate 550 with little misalignment. In this case, the distortions (B) and (C) components that occur in the film formation stage after patterning in the processing stage of the substrates 510 and 520 may be corrected individually for each substrate in the bonding apparatus 300. Furthermore, the correction of distortion (A) may be assigned to the correction in the processing stage of either the substrates 510 or 520, or may be corrected in the bonding stage.

[0147] In either case, variations in distortion occurring in each of the substrates 510 and 520, i.e., variations from a common correction amount, may be individually corrected by a correction mechanism in the bonding apparatus 300. Furthermore, the positional deviations of the substrates 510 and 520 in the fabricated laminated substrate 550 may be measured and reflected in the correction amounts in the subsequent processing of the substrates 510 and 520 and fabrication of the laminated substrate 550.

[0148] If a specific distortion component with little variation is detected, the pattern itself of a reticle or the like used in the circuit forming device 200 in the processing unit 11 may be corrected. This allows the load on each part of the manufacturing apparatus 10 to be further reduced.

[0149] Furthermore, since the distortion components generated during the bonding process may depend on the characteristics of the manufacturing apparatus 10 itself, the measurement results by the first measuring unit 14 may be accumulated and referred to when manufacturing other types of laminated substrates 550. Furthermore, if the measurement results measured by the first measuring unit 14 for multiple laminated substrates 550 contain extremely different values, the determining unit 133 may determine the correction items by excluding the abnormal values.

[0150] Furthermore, the determination unit 133 may determine the average value, median value, mode value, or minimum value of the misalignment amounts measured by the first measurement unit 14 as the common correction amount of the correction to be performed through the common correction control unit 131. Common Correction Control Unit In this case, the determination unit 133 calculates the average value, median value, mode value, or minimum value from the different misalignment amounts when multiple sets of substrates 510, 520 are bonded to manufacture multiple laminated substrates 550 as the correction amount to be corrected by the common correction control unit 131. On the other hand, the correction to be individually performed by the individual correction control unit 132 for each manufactured laminated substrate 550 is the difference between the correction amount of the correction commonly performed by the common correction control unit 131 and the misalignment amount of each individual laminated substrate 550.

[0151] For example, if the correction amount is an average value, the value obtained by subtracting the average value from the amount of misalignment predicted to occur between the two substrates 510 and 530 when they are bonded together is set as the correction amount to be executed by the individual correction control unit 132. The difference from the average value differs for each pair of substrates 510 and 530 to be bonded, and since there is variation from the average value, the correction amount executed by the individual correction control unit 132 differs for each substrate 510, 530. The same applies when the correction amount is set to the median, mode, or minimum value.

[0152] Furthermore, for multiple types of misalignment components obtained by measuring the misalignment of the substrates 510, 520 in multiple laminated substrates 550, the variation between the substrates is calculated as, for example, 3σ, and depending on whether the calculated value is lower than a predetermined threshold, it can be evaluated whether the misalignment component is a component common to the multiple laminated substrates 550. Here, the component determined to be common is determined by the common correction control unit 131 as a component to be commonly corrected.

[0153] In this case, the threshold value can be determined, for example, based on whether the magnitude of misalignment that may occur in the laminated substrate 550 achieves a predetermined target accuracy. In this way, misalignment components that are determined to be correctable in common for multiple laminated substrates 550 can be corrected according to one correction condition, for example, at the stage when the substrates 510 and 520 are processed in the processing unit 11.

[0154] When calculating the correction amount, the positional misalignment in each of the multiple laminated substrates 550 may be decomposed into a magnification component and a nonlinear distortion component. In this case, the average, median, mode, or minimum value of the magnification components of each of the multiple laminated substrates 550 may be used as a common correction amount, and the difference between the common correction amount and the magnification resulting from bonding a substrate corrected using this common correction amount to another substrate may be used as an individual correction amount. On the other hand, with regard to the nonlinear components, the nonlinear components may be calculated at each of multiple common positions on each of the multiple laminated substrates 550, and the average, median, mode, or minimum value of the nonlinear distortion components at each position may be used as a common correction amount for each position, and the difference between the common correction amount and the nonlinear distortion resulting from bonding a substrate corrected using this common correction amount to another substrate may be used as an individual correction amount.

[0155] As described with reference to Fig. 6, the bonding device 300 of the lamination unit 13 detects the alignment marks 518, 528 for each of the substrates 510, 520 to detect deformation or distortion of the substrates 510, 520. Therefore, the lamination unit 13 can correct the individual misalignment components that occur for each of the individual substrates 510, 520. Therefore, by correcting the misalignment components that occur in common among the multiple laminated substrates 550 at the processing stage in the processing unit 11, the correction conditions for the correction in the lamination unit 13 can be specialized to the misalignment that occurs individually for each of the individual substrates 510, 520, allowing for more efficient correction.

[0156] Furthermore, by correcting in advance in the processing unit 11 the misalignment component that occurs in the lamination unit 13 and therefore has not yet occurred in the processing unit 11, the amount of correction that can ultimately be made in the entire manufacturing apparatus 10 is the sum of the range that can be corrected in the processing unit 11 and the range that can be corrected in the lamination unit 13. Therefore, the amount of correction that can be made in the entire manufacturing apparatus 10 is increased. From this perspective, the common correction that is made by the common correction control unit 131 may also be made in the lamination unit 13.

[0157] In manufacturing apparatus 10, at least a part of the positional deviation occurring in stacking unit 13 may be corrected in processing unit 11. For this reason, the positional deviation from the design value in the substrate processed in processing unit 11 may temporarily become larger compared to the case where only the positional deviation occurring in processing unit 11 is corrected.

[0158] Furthermore, the common correction control unit 131 may distribute the common correction amount provided by the determination unit 133 to multiple devices that perform multiple processes in the manufacturing apparatus 10. For example, the initial distortion in the substrates 510 and 520 may be divided into components that can be predicted in advance, such as the mean value, median value, mode value, and minimum value, and minute individual differences that cannot be predicted, which are variations as deviations from the mean value, median value, mode value, or minimum value, and the former may be corrected by the circuit forming apparatus 200 and the latter may be corrected by the bonding apparatus 300.

[0159] Furthermore, if the substrates 510, 520 have already been partially processed at the time the determination unit 133 determines the amount of correction, the substrates 510, 520 cannot be corrected by the processing unit 11. Therefore, in such a case, even if the distortion component is suitable for correction using the processing unit 11, it may be determined that the correction should be performed by another device such as the lamination unit 13.

[0160] Furthermore, additional correction devices may be used in combination, such as a substrate holder 540 having a convex suction surface 542 and an actuator, such as a table device having a mini-jack or mini-balloon, which will be described later with reference to Figures 21 to 23. In this case, correction is performed by the substrate holder 540 using a common correction amount, such as the average, median, mode, or minimum value, and the difference between this correction amount and the actual amount of positional deviation to be corrected is corrected using the correction device. That is, in this case, the selection of the substrate holder 540 is controlled by the common correction control unit 131, and the correction device is controlled by the individual correction control unit 132.

[0161] 21 is a schematic cross-sectional view of a correction device 601 that can be used when correcting each substrate 520 individually in the stacking unit 13. The correction device 601 is incorporated into the lower stage 332 of the bonding device 300, and corrects one of the substrates 520 carried into the bonding device 300.

[0162] The correction device 601 has a base 611, a plurality of actuators 612, and an adsorption unit 613. The base 611 supports the adsorption unit 613 via the actuators 612. The adsorption unit 613 has an adsorption mechanism such as a vacuum chuck or an electrostatic chuck, and forms the upper surface of the lower stage 332. The adsorption unit 613 adsorbs and holds the loaded substrate holder 540.

[0163] A plurality of actuators 612 are arranged below the suction portion 613 along the lower surface of the suction portion 613. The plurality of actuators 612 are individually driven by a working fluid supplied from the outside via a pump 615 and a valve 616 under the control of the control device 130. As a result, the plurality of actuators 612 expand and contract by different amounts in the thickness direction of the lower stage 332, i.e., the overlapping direction of the substrates 510, 520, thereby raising or lowering the coupled region of the suction portion 613.

[0164] Furthermore, each of the multiple actuators 612 is coupled to an adsorption unit 613 via a link. The center of the adsorption unit 613 is coupled to the base 611 by a support 614. When the actuators 612 operate in the correction device 601, the surface of the adsorption unit 613 is displaced in the thickness direction for each region to which the actuator 612 is coupled.

[0165] 22 is a schematic plan view of the correction device 601, showing the layout of the actuators 612 in the correction device 601. In the correction device 601, the actuators 612 are arranged radially around the support 614. The arrangement of the actuators 612 can also be considered as concentric circles around the support 614. The arrangement of the actuators 612 is not limited to that shown in the figure, and they may be arranged in a lattice pattern, a spiral pattern, or the like. This allows the substrate 520 to be corrected by changing its shape into a concentric, radial, spiral, or other pattern.

[0166] 23 is a diagram illustrating the operation of correction device 601. As shown in the figure, actuators 612 can be expanded or contracted by individually opening and closing valves 616, thereby changing the shape of suction portion 613. Therefore, if suction portion 613 is adsorbing substrate holder 540 and substrate holder 540 is holding substrate 520, the shapes of substrate holder 540 and substrate 520 can be changed and curved by changing the shape of suction portion 613.

[0167] 22, the actuators 612 can be considered to be arranged concentrically, that is, in the circumferential direction of the lower stage 332. Therefore, as shown by the dotted line M in Fig. 23, by grouping the actuators 612 for each circumference and increasing the amount of drive as they approach the periphery, the center of the surface of the suction part 613 can be raised, and the shape can be changed to a spherical, parabolic, cylindrical, or other shape.

[0168] As a result, the substrate 520 can be curved by changing its shape to imitate a spherical surface, a parabolic surface, etc., just as in the case where the substrate 520 is held by the curved substrate holder 540. Therefore, in the correction device 601, compared to the center B in the thickness direction of the substrate 520 indicated by the dashed dotted line in the figure, the shape of the upper surface of the substrate 520 in the figure is changed so that the surface of the substrate 520 expands in the planar direction.

[0169] Also, the shape of the lower surface of the substrate 520 in the figure is changed so that the surface of the substrate 520 shrinks in the planar direction. Furthermore, by individually controlling the amounts of expansion and contraction of the multiple actuators 612, the shape of the substrate 520 can be changed and curved into other shapes such as a cylindrical surface, as well as a nonlinear shape including multiple concave and convex portions.

[0170] 22, the suction portion 613 has a shape that protrudes in the center. However, by increasing the amount of movement of the actuator 612 at the periphery of the suction portion 613 and causing the center portion of the suction portion 613 to sink in relative to the periphery, it is possible to reduce the magnification of the circuit region 516 on the surface of the substrate 520.

[0171] Furthermore, in the above example, the correction device 601 is incorporated into the lower stage 332 of the bonding apparatus 300, but the correction device 601 may be incorporated into the upper stage 322, and the substrate 510 may be corrected on the upper stage 322. Furthermore, the correction device 601 may be incorporated into both the upper stage 322 and the lower stage 332. Furthermore, the correction may be shared between the upper stage 322 and the lower stage 332. Correction of the magnification of the substrates 510 and 520 is not limited to the above method, and other correction methods such as thermal expansion or thermal contraction by temperature control may also be introduced. In this case, temperature control may be performed by a device external to the bonding apparatus 300.

[0172] Furthermore, when the temperature-controlled substrates 510, 520 are transported to the bonding apparatus 300, the transport path may be in a heat-insulating environment. Also, the temperature distribution of the hands holding the substrates 510, 530 in the transport section that transports the substrates 510, 530 may be made equal to the temperature distribution of the temperature-controlled substrates 510, 530. Furthermore, the temperature during temperature control may be set in consideration of the heat released from the substrates 510, 530 during transport. Also, the temperature distribution of the upper stage 322 and lower stage 332 into which the substrates 510, 530 are transported may be made equal to the temperature distribution of the temperature-controlled substrates 510, 530.

[0173] In this way, the correction device 601 can instantly respond to various corrections by controlling the actuators 612 to change the shape of the chucking surface. Therefore, it can be suitably used when correcting multiple substrates 520 under individual conditions. In addition, by individually operating the actuators 612 of the correction device 601 through the control device 130, nonlinear distortion in the substrates 520 can also be corrected.

[0174] In addition, when one of the substrates 520 is deformed and bonded to the other substrate 510, stress due to deformation is also generated in the fixed side substrate 520, which is not released from the hold, in accordance with the stress generated in the release side substrate 510, which is released from the hold by the substrate holder 530 upon bonding. Therefore, the difference in stress between the substrates is small in the state of the laminated substrate 550 after bonding.

[0175] On the other hand, in a laminated substrate 550 in which substrates whose magnification or nonlinear distortion has been corrected by patterning using the circuit forming apparatus 200 are bonded, stress due to distortion generated during the bonding process remains in the release-side substrate 510, but stress due to this deformation does not occur in the fixed-side substrate 520 because it is not deformed for distortion correction. Therefore, when the substrate 520 is released from the substrate holder 540 after bonding, the stress is distributed between both substrates. As a result, the stress received from the substrate 510 causes the substrate 520 to shrink and deform together with the substrate 510. In this state, the positions of the patterns formed on the substrates 510 and 520 are significantly deviated from the designed positions.

[0176] Thereafter, by thinning the substrate 510, stress is again concentrated on the substrate 510. As a result, the substrates 510 and 520 are each expanded and deformed, and the positions of the patterns on the substrates 510 and 520 become almost identical to the design positions. This allows subsequent processes to be performed using the design positions as target positions when exposing the rewiring layer after thinning the substrate 510 or stacking the third and subsequent substrates. Therefore, if it is known in advance which substrate will be thinned in the laminated substrate 550 after bonding, it is preferable to correct the distortion occurring in the substrate to be thinned in the processing unit 11.

[0177] In the above example, the actuator 612 is configured to deform the lower stage 332, thereby deforming at least one of the substrates 510 and 520 for correction, but, for example, as shown in Fig. 9, a plurality of substrate holders 540 having curved suction surfaces 542 with different curvatures may be prepared, and the substrate 520 may be deformed, i.e., corrected, by holding the substrate 520 with the substrate holder 540 having a curvature according to the correction conditions for the substrate 520. When the positional misalignment between the substrates is reduced to a threshold value or less by deforming at least one of the two substrates 510 and 520, the amount of deformation becomes the amount of correction.

[0178] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the claims that such modifications and improvements can also be included within the technical scope of the present invention.

[0179] It should be noted that the order of execution of each process, such as operations, procedures, steps, and stages, in the devices, systems, programs, and methods shown in the claims, specifications, and drawings is not specifically stated as "before," "prior to," etc., and that the processes can be performed in any order unless the output of a previous process is used in a subsequent process. Even if the operational flow in the claims, specifications, and drawings is described using "first," "next," etc. for convenience, this does not mean that the processes must be performed in this order. [Explanation of symbols]

[0180] 10 Manufacturing equipment, 11 Processing unit, 12 Second measurement unit, 13 Stacking unit, 14 Measurement unit, 100 Film forming device, 110 Chamber, 112 Supply hole, 114 Exhaust hole, 122, 124 High frequency electrode, 130 Control device, 131 Common correction control unit, 132 Individual correction control unit, 133 Decision unit, 134 Judgment unit, 200 Circuit forming device, 210 Light source, 220 Reticle, 230 Reduction optical system, 240 Moving stage, 300 Bonding device, 310 Frame, 312 Bottom plate, 316 Top plate, 322 Upper stage, 324, 334 Microscope, 326, 336 Activation device, 331 X-direction driving unit, 332 Lower stage, 333 Y-direction driving unit, 338 Lifting driving unit, 339 Rotation driving unit, 400 Thinning device, 510, 520 Substrate, 512, 522 Scribe line, 514, 524 Notch, 516, 526 Circuit area, 518, 528 Alignment mark, 530, 540 Substrate holder, 532, 542 Adsorption surface, 550 Laminated substrate, 601 Correction device, 611 Base, 612 Actuator, 613 Adsorption part, 614 Support, 615 Pump, 616 Valve

Claims

1. Observing a first structure included in the first substrate and a second structure included in the second substrate in a first stacked body in which a first substrate and a second substrate are stacked; Observing a third structure included in the third substrate and a fourth structure included in the fourth substrate in a second stack different from the first stack in which a third substrate and a fourth substrate are stacked; outputting information based on the observation results of the first structure and the second structure and the observation results of the third structure and the fourth structure as setting information for setting processing conditions for a first target substrate to be processed by a processing apparatus; method.

2. the processing device is an exposure device, the processing conditions are exposure conditions, the setting information is setting information for setting the exposure conditions of the first target substrate to be exposed by the exposure apparatus; The method of claim 1.

3. the observation results of the first structure and the second structure include information on the positions of the first structure and the second structure, or information on a positional deviation between the first structure and the second structure. The method according to claim 1 or 2.

4. Observing a first structure included in the first substrate and a second structure included in the second substrate in a first stacked body in which a first substrate and a second substrate are stacked; and outputting information based on the observation results of the first structure and the second structure as setting information for setting processing conditions for a plurality of target substrates to be processed by a processing apparatus. method.

5. the processing device is an exposure device, the processing conditions are exposure conditions, the setting information is setting information for setting the exposure conditions for the plurality of target substrates to be exposed by the exposure apparatus; The method of claim 4.

6. the observation results of the first structure and the second structure include information on the positions of the first structure and the second structure, or information on a positional deviation between the first structure and the second structure. The method according to claim 4 or 5.

7. processing a first target substrate based on setting information based on positional information of a first structure included in a first substrate and a second structure included in a second substrate in a first stack in which a first substrate and a second substrate are stacked, and positional information of a third structure included in a third substrate and a fourth structure included in a fourth substrate in a second stack different from the first stack in which a third substrate and a fourth substrate are stacked, method.

8. processing the first target substrate includes exposing the first target substrate based on the setting information; The method of claim 7.

9. the position information of the first structure and the second structure includes information on a position of the first structure and a position of the second structure, or information on a positional deviation between the first structure and the second structure; 9. The method according to claim 7 or 8.

10. processing a first target substrate based on setting information based on positional information of a first structure included in a first substrate and a second structure included in a second substrate in a first stack in which the first substrate and the second substrate are stacked; processing a second target substrate different from the first target substrate based on the setting information; method.

11. processing the first target substrate includes exposing the first target substrate based on the setting information; processing the second target substrate includes exposing the second target substrate based on the setting information; The method of claim 10.

12. the position information of the first structure and the second structure includes information on a position of the first structure and a position of the second structure, or information on a positional deviation between the first structure and the second structure; 12. The method according to claim 10 or 11.

13. observing the first structure and the second structure includes observing the first structure and the second structure through the first substrate and the second substrate. The method according to any one of claims 1 to 6.

14. The exposing step includes adjusting at least one of a shape and a size of a pattern of light to be irradiated onto the resist of the first target substrate based on the setting information, and irradiating the resist with the adjusted light.

12. The method of claim 8 or 11.

15. the exposing includes adjusting a projection magnification of light to be irradiated onto the resist of the first target substrate based on the setting information, and irradiating the resist with the adjusted light.

12. The method of claim 8 or 11.

16. the exposing includes irradiating light onto a resist of the first target substrate while controlling movement of a stage on which the first target substrate is mounted based on the setting information; 12. The method of claim 8 or 11.

17. the setting information includes information regarding a positional deviation that occurs commonly in the first stack and the second stack, The method according to any one of claims 1 to 3 and 7 to 9.

18. the first laminate and the second laminate are laminates from the same lot; The method according to any one of claims 1 to 3 and 7 to 9.

19. the setting information includes information on an average value, a median, a mode, a minimum value, or a standard deviation of the positional misalignment between a structure of one substrate and a structure of another substrate of each of a plurality of stacks, including the positional misalignment between the first structure and the second structure and the positional misalignment between the third structure and the fourth structure; 10. The method of claim 3 or 9.

20. the outputting includes outputting the information based on the observation results of the first structure and the second structure and the observation results of the third structure and the fourth structure as setting information for setting processing conditions for the first target substrate and a second target substrate different from the first target substrate, which are processed by the processing apparatus. The method according to any one of claims 1 to 3.

21. processing a second target substrate different from the first target substrate based on the setting information; The method according to any one of claims 7 to 9.

22. the position of the first structure and the position of the second structure are positions in a direction intersecting a direction in which the first substrate and the second substrate are stacked, the misalignment between the first structure and the second structure is a misalignment in a direction intersecting a direction in which the first substrate and the second substrate are stacked; 13. The method according to any one of claims 3, 6, 9 and 12.

23. observing the first structure and the second structure includes moving an observation device in a direction intersecting a direction in which the first substrate and the second substrate are stacked so that the first structure and the second structure are positioned within a field of view of the observation device that observes the first structure and the second structure.

23. The method of claim 22.

24. the structure includes at least one of a wiring, a circuit, a protective film, an element, and a connection terminal; The method according to any one of claims 1 to 23.

25. the first laminate is a laminate thinned by a polishing device; The method according to any one of claims 1 to 23.

26. an observation device for observing a first structure included in a first substrate and a second structure included in a second substrate in a first stack in which a first substrate and a second substrate are stacked, and a third structure included in the third substrate and a fourth structure included in the fourth substrate in a second stack different from the first stack in which a third substrate and a fourth substrate are stacked, the observation device outputs information based on the observation results of the first structure and the second structure and the observation results of the third structure and the fourth structure as setting information for setting processing conditions for a first target substrate to be processed by a processing device. Device.

27. a measurement device configured to observe a first structure included in a first substrate and a second structure included in a second substrate in a first stack in which a first substrate and a second substrate are stacked, the measuring device outputs information based on the observation results of the first structure and the second structure as setting information for setting processing conditions for a plurality of target substrates to be processed by a processing device. Device.

28. the observation device is movable so that the first structure and the second structure are positioned within a field of view of the observation device; 28. Apparatus according to claim 26 or 27.

29. the observation device is capable of observing the first structure and the second structure through the first substrate and the second substrate, 28. Apparatus according to claim 26 or 27.

30. The stage and an optical system; irradiating light via the optical system onto a resist of a first target substrate mounted on the stage based on setting information that is based on positional information of a first structure included in a first substrate and a second structure included in a second substrate in a first stack in which a first substrate and a second substrate are stacked, and positional information of a third structure included in a third substrate and a fourth structure included in a fourth substrate in a second stack different from the first stack in which a third substrate and a fourth substrate are stacked; Device.

31. The stage and an optical system; irradiating light via the optical system onto a resist of a first target substrate mounted on the stage based on setting information based on a positional deviation between a first structure included in the first substrate and a second structure included in the second substrate in a first stack in which a first substrate and a second substrate are stacked; irradiating a resist of a second target substrate, which is different from the first target substrate and which is mounted on the stage, with light via the optical system based on setting information; Device.

32. irradiating the resist of the first target substrate with light includes performing nonlinear correction based on the setting information, and irradiating the resist of the first target substrate mounted on the stage with light via the optical system.

32. Apparatus according to claim 30 or 31.

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