Vapor phase growth apparatus and film deposition method

Abstract

The objective is to provide a vapor phase growth apparatus and a film deposition method that can suppress a decrease in the film deposition accuracy of films formed on the surface of a wafer. [Solution] The vapor phase growth apparatus of the embodiment includes a susceptor that supports a wafer and an annular wafer guide that surrounds the wafer. The susceptor has a wafer support portion that supports the wafer from below, a guide support portion that supports the wafer guide from below, and an inner portion located radially inward from the wafer support portion. The upper surface of the inner portion is located below the wafer contact surface of the wafer support portion. The wafer contact surface is located above the guide contact surface of the guide support portion. In the film deposition process, the control unit measures the temperature of the portion of the wafer that overlaps with the wafer support portion using a first temperature sensor, measures the temperature of the portion of the wafer that overlaps with the inner portion using a second temperature sensor, and controls the first heating unit and the second heating unit based on the measurement results of the first temperature sensor and the second temperature sensor.

Description

Technical Field

[0005] ,

[0001] Embodiments of the present invention relate to a vapor deposition apparatus and a film forming method.

Background Art

[0002] A vapor deposition apparatus for forming a film on the surface of a wafer is known. In such a vapor deposition apparatus, in a film forming process for forming a film on the surface of a wafer, a susceptor on which the wafer is placed is rotated while being heated. In such a film forming process, for example, due to problems such as the wafer shifting and the outer edge of the wafer entering between an annular wafer guide surrounding the outer edge of the wafer and the susceptor, or the temperature variation of the heated wafer becoming large, the thickness variation of the film formed on the wafer becomes large, and the carrier concentration variation of the film formed on the wafer becomes large, etc., there is a risk that the film forming accuracy of the film formed on the wafer may decrease.

Prior Art Documents

[0006] [Figure 1] A cross-sectional view showing a vapor phase growth apparatus according to the first embodiment. [Figure 2] A cross-sectional view showing a part of the vapor phase growth apparatus of the first embodiment. [Figure 3] A view from above of a part of the vapor phase growth apparatus of the first embodiment. [Figure 4] A cross-sectional view showing a part of the vapor phase growth apparatus of the first embodiment when wafers are being transported. [Figure 5] This is a block diagram showing a part of the vapor phase growth apparatus of the first embodiment. [Figure 6] A flowchart showing an example of a procedure for forming a film on the surface of a wafer using a vapor phase growth apparatus according to the first embodiment. [Figure 7] A cross-sectional view showing a part of the vapor phase growth apparatus of the second embodiment. [Figure 8] A cross-sectional view showing a part of the vapor phase growth apparatus of the third embodiment. [Figure 9] A cross-sectional view showing the deformed state of the wafer during the film deposition process using the vapor phase growth apparatus of the third embodiment. [Modes for carrying out the invention]

[0007] The vapor phase growth apparatus and film deposition method of the embodiment will be described below with reference to the drawings. The drawings show the Z-axis, which indicates the vertical direction, as appropriate. The side in which the arrow of the Z-axis points (+Z side) is the upper side in the vertical direction, and the side opposite to the side in which the arrow of the Z-axis points (-Z side) is the lower side in the vertical direction. In the following description, the vertical direction will be referred to as "vertical direction Z," the upper side of vertical direction Z will simply be referred to as "upper side," and the lower side of vertical direction Z will simply be referred to as "lower side." The drawings also show a rotation axis R extending in the vertical direction Z as appropriate. The rotation axis R is a virtual line. In the following description, unless otherwise specified, the radial direction centered on the rotation axis R will simply be referred to as the "radial direction," and the circumferential direction around the rotation axis R will simply be referred to as the "circumferential direction."

[0008] (First Embodiment) Figure 1 is a cross-sectional view showing a vapor phase growth apparatus 10 of the first embodiment. Figure 2 is a cross-sectional view showing a part of the vapor phase growth apparatus 10 of the first embodiment. Figure 3 is a view of a part of the vapor phase growth apparatus 10 of the first embodiment from above. In Figure 3, the outline of the wafer W is shown by a dashed line. The vapor phase growth apparatus 10 shown in Figures 1 to 3 is an apparatus for forming a film on the surface of a wafer W. In the vapor phase growth apparatus 10, an epitaxial film is formed on the surface of the wafer W by, for example, the CVD (Chemical Vapor Deposition) method. The film formed on the surface of the wafer W is, for example, a film composed of silicon carbide (SiC), i.e., a SiC film. The film formed on the surface of the wafer W may be a film composed of other materials such as Si. The wafer W is formed of, for example, silicon carbide (SiC). The wafer W may be formed of other materials such as silicon (Si). As shown in Figure 3, the wafer W is substantially disc-shaped. A portion of the outer edge of the wafer W is a linearly extending orientation flat portion Wd. The orientation flat portion Wd indicates, for example, the crystal orientation of the material constituting the wafer W. The rest of the outer edge of the wafer W is arc-shaped. The wafer W is placed in the vapor phase growth apparatus 10 with the surface Wa on which the film is formed facing upwards and the back surface Wb opposite to surface Wa facing downwards.

[0009] As shown in Figure 1, the vapor phase growth apparatus 10 includes a chamber 20, a supply pipe 24, a susceptor 30, a wafer guide 40, a first heating unit 51, a second heating unit 52, a third heating unit 53, a drive unit 60, a first temperature sensor 71, and a second temperature sensor 72.

[0010] Chamber 20 houses a supply pipe 24, a susceptor 30, a wafer guide 40, a first heating section 51, a second heating section 52, a third heating section 53, and a drive section 60. Chamber 20 is made of a metal, such as stainless steel (SUS). Chamber 20 is cylindrical and extends in the vertical direction Z. A supply port 21 is formed on the top plate of Chamber 20. An outlet port 22 is formed on the bottom of Chamber 20. Gas G containing raw material gas for forming a film on a wafer W is supplied into Chamber 20 from the supply port 21. A window section 23 is formed on the top plate of Chamber 20. The window section 23 is a portion through which infrared rays can pass. The window section 23 is located outside the supply port 21 in the radial direction centered on the rotation axis R, that is, at a position radially further from the rotation axis R than the supply port 21.

[0011] The supply pipe 24 is cylindrical and extends vertically in the Z direction. The supply pipe 24 opens on both the top and bottom. The gas G supplied into the chamber 20 from the supply port 21 flows downward through the inside of the supply pipe 24. The gas G flowing downward through the inside of the supply pipe 24 is supplied to the wafer W placed on the susceptor 30. Any excess gas G supplied into the chamber 20 is discharged to the outside of the chamber 20 from the outlet 22.

[0012] An epitaxial film is formed on the surface of wafer W by a reaction between the raw material gas contained in gas G and the surface of wafer W. The raw material gas is, for example, a gas containing a Si-based gas and a C-based gas. Examples of Si-based gases include silane (SiH4), dichlorosilane (SiH2Cl2), trichlorosilane (SiHCl3), and tetrachlorosilane (SiCl4). Examples of C-based gases include propane (C3H8). In the first embodiment, the raw material gas is, for example, a gas containing silane (SiH4) and propane (C3H8).

[0013] In the first embodiment, other gases used in addition to the raw material gas are also supplied into the chamber 20 from the supply port 21. Examples of these gases include impurity gas, carrier gas, and hydrogen chloride (HCl) gas. Examples of impurity gases include N-type impurity gases such as nitrogen and P-type impurity gases such as TMA (trimethylaluminum). The carrier gas is, for example, argon gas or hydrogen gas. More specifically, the carrier gas when the wafer W is brought into the vapor phase growth apparatus 10 and placed on the susceptor 30, and when the wafer W after film formation is removed from the susceptor 30 and transported out of the vapor phase growth apparatus 10, is argon gas. The carrier gas during film formation is hydrogen gas.

[0014] The susceptor 30 is a support member that supports the wafer W from below. The susceptor 30 is supported from below by the drive unit 60. As shown in Figure 2, the susceptor 30 has a susceptor body 31 and a movable part 32. The susceptor body 31 supports the wafer W from below. In the first embodiment, the susceptor body 31 is an annular shape surrounding the rotation axis R. The susceptor body 31 has an inner annular portion 33, a wafer support portion 34, and a guide support portion 35. As shown in Figure 3, the inner annular portion 33 is an annular shape surrounding the rotation axis R. In the first embodiment, the radial inner edge of the inner annular portion 33 is the radial inner edge of the susceptor body 31.

[0015] The wafer support portion 34 is located radially outward from the inner annular portion 33. The wafer support portion 34 is the part that supports the wafer W from below. The wafer support portion 34 is an annular shape surrounding the axis of rotation R. The radial inner edge of the wafer support portion 34 connects to the radial outer edge of the inner annular portion 33. In the first embodiment, the wafer support portion 34 has an arc portion 34a and a straight portion 34b. The arc portion 34a is the part of the wafer support portion 34 that extends in an arc shape centered on the axis of rotation R when viewed in the vertical direction Z. The central angle of the arc portion 34a is, for example, about 320°. The central angle of the arc portion 34a is not particularly limited. The straight portion 34b is the part of the wafer support portion 34 that extends in a straight line when viewed in the vertical direction Z. The straight portion 34b connects one end and the other end of the arc portion 34a. The straight portion 34b supports from below the portion of the wafer W located radially inward of the radial outer edge, specifically the portion located radially inward of the orientation flat portion Wd. The arc portion 34a supports from below the portion of the wafer W located radially inward of the radial outer edge, excluding the portion located radially inward of the orientation flat portion Wd.

[0016] The wafer support portion 34 has a plurality of first recesses 34c that are recessed downward from the upper surface of the wafer support portion 34. The plurality of first recesses 34c are spaced apart in the circumferential direction around the rotation axis R when viewed in the vertical direction Z. The plurality of first recesses 34c extend radially. In the first embodiment, the plurality of first recesses 34c penetrate the wafer support portion 34 radially. The upper surface of the wafer support portion 34 is divided by the plurality of first recesses 34c in the direction in which the wafer support portion 34 extends when viewed in the vertical direction Z. As shown in Figure 2, in the first embodiment, the bottom surface of the first recess 34c is located above the upper surface of the guide support portion 35, i.e., the guide contact surface 35s described later.

[0017] The wafer support portion 34 has a wafer contact surface 34s that contacts the wafer W. The wafer contact surface 34s is an upward-facing surface. The wafer contact surface 34s is the upper surface of the wafer support portion 34. The wafer contact surface 34s is located above the upper surface of the inner annular portion 33. As shown in FIG. 3, in the first embodiment, a plurality of wafer contact surfaces 34s are arranged at intervals in the circumferential direction around the rotation axis R as viewed in the vertical direction Z. The plurality of wafer contact surfaces 34s are each the upper surface of the wafer support portion 34 divided into a plurality by a plurality of first recesses 34c. In the first embodiment, each wafer contact surface 34s is a flat surface orthogonal to the vertical direction Z. In the first embodiment, the circumferential dimension of each wafer contact surface 34s decreases as it goes radially inward. Note that when the plurality of first recesses 34c are not formed, the wafer support portion 34 may have one annular wafer contact surface 34s surrounding the rotation axis R.

[0018] The guide support portion 35 is located radially outside the wafer support portion 34. In the first embodiment, the guide support portion 35 is annular and surrounds the rotation axis R. More specifically, the guide support portion 35 is substantially annular with the rotation axis R at its center. The guide support portion 35 is a portion that supports the wafer guide 40 from below. As shown in FIG. 2, in the first embodiment, the radially inner edge portion of the guide support portion 35 is connected to the radially outer edge portion of the wafer support portion 34. The guide support portion 35 has a guide contact surface 35s that contacts the wafer guide 40. The guide contact surface 35s is the portion of the upper surface of the wafer support portion 34 that contacts the wafer guide 40. In the first embodiment, the guide contact surface 35s is a plane orthogonal to the vertical direction Z. The guide contact surface 35s is located below each wafer contact surface 34s. In other words, each wafer contact surface 34s is located above the guide contact surface 35s. The guide contact surface 35s is located above the upper surface of the inner annular portion 33. As shown in FIG. 3, in the first embodiment, the guide contact surface 35s is annular and surrounds the rotation axis R. More specifically, the guide contact surface 35s is substantially annular with the rotation axis R at its center.

[0019] The movable part 32 is separate from the susceptor main body 31. The movable part 32 is disposed radially inward of the inner annular part 33 of the susceptor main body 31. The movable part 32 is fitted radially inward of the inner annular part 33 of the susceptor main body 31. In the first embodiment, the movable part 32 and the inner annular part 33 form an inner part 36 located radially inward of the wafer support part 34. The upper surface 36s of the inner part 36 is formed by the upper surface of the movable part 32 and the upper surface of the inner annular part 33. The upper surface 36s of the inner part 36 is located below the wafer contact surface 34s. The upper surface 36s of the inner part 36 is located below the guide contact surface 35s. When the wafer W is placed on the susceptor 30, the back surface Wb of the wafer W is disposed away from the upper side of the upper surface 36s of the inner part 36. A gap is provided in the vertical direction Z between the wafer W and the upper surface 36s of the inner part 36.

[0020] The movable part 32 is movable in the vertical direction Z. FIG. 4 is a cross-sectional view showing a part of the vapor phase growth apparatus 10 when the wafer W is being transported. As shown in FIG. 4, when the wafer W is being transported, the movable part 32 is moved above the inner annular part 33. In the first embodiment, the movable part 32 is moved in the vertical direction Z by the elevating part 80. The elevating part 80 has a plurality of movable pins 81 located below the movable part 32. The elevating part 80 moves the plurality of movable pins 81 upward and pushes up the movable part 32 from below by the plurality of movable pins 81 to move the movable part 32 upward. The plurality of movable pins 81 move above the second heating part 52 through the gaps provided in the second heating part 52 and push up the movable part 32.

[0021] When the wafer W is transported onto the susceptor 30, the wafer W transported by the transport unit 100 is placed on the movable unit 32 located above the inner annular unit 33. In this state, when the movable unit 32 is moved downward by the lifting unit 80, the radially outer portion of the wafer W is supported from below by the wafer support unit 34, and the wafer W is placed on the susceptor 30. When the wafer W is transported off the susceptor 30, the movable unit 32 rises, and the wafer W is lifted above the wafer support unit 34 and the wafer guide 40 by the movable unit 32. In this state, the wafer W is transported off the movable unit 32 by the transport unit 100.

[0022] The wafer guide 40 is supported from below by the susceptor 30. The wafer guide 40 is annular in shape, surrounding the axis of rotation R. More specifically, as shown in Figure 3, the wafer guide 40 is annular in shape, centered on the axis of rotation R. The wafer guide 40 surrounds the outer edge of the wafer W. The wafer guide 40 is, for example, plate-shaped with its surface facing the vertical direction Z. The wafer guide 40 is made of, for example, poly-SiC. The wafer guide 40 may also be made of graphite. In this case, a coating layer made of SiC may be provided on the surface of the wafer guide 40.

[0023] As shown in Figure 2, the wafer guide 40 is supported from below by the guide support portion 35. The lower surface of the wafer guide 40 is in contact with the guide contact surface 35s. In the first embodiment, the radial inner edge of the wafer guide 40 is located radially outward from the radial inner edge of the upper surface of the guide support portion 35. The lower surface of the wafer guide 40 is located below the wafer contact surface 34s. The upper surface of the wafer guide 40 is located above the upper surface of the wafer W placed on the wafer support portion 34, i.e., the surface Wa. The upper end of the radial inner surface of the wafer guide 40 is located above the wafer contact surface 34s. In other words, the wafer contact surface 34s is located below the upper end of the inner circumferential surface of the wafer guide 40.

[0024] Furthermore, one of the wafer guide 40 and the guide support portion 35 may have a recess that is recessed in the vertical direction Z, and the other of the wafer guide 40 and the guide support portion 35 may have a protrusion that is projected in the vertical direction Z and fits into the recess. This configuration suppresses radial displacement of the wafer guide 40 relative to the guide support portion 35.

[0025] As shown in Figure 1, the drive unit 60 rotates the susceptor 30 around a rotation axis R extending in the vertical direction Z. The drive unit 60 includes a susceptor holder 61 and a power unit 62. The susceptor holder 61 is cylindrical with an opening on the upper side. The susceptor 30 is held at the upper end of the susceptor holder 61. The susceptor holder 61 is located inside the chamber 20. The lower end of the susceptor holder 61 is located outside the chamber 20 through a hole formed in the bottom of the chamber 20. The power unit 62 rotates the susceptor holder 61 around the rotation axis R. The power unit 62 is, for example, a motor. The power unit 62 is connected to the lower end of the susceptor holder 61. The power unit 62 may also include a motor and a reduction mechanism connected to the motor. In this case, the rotation of the motor is transmitted to the susceptor holder 61 via the reduction mechanism. The power unit 62 is located, for example, outside the chamber 20.

[0026] The first heating section 51 and the second heating section 52 are capable of heating the susceptor 30. The heating of the susceptor 30 by the first heating section 51 and the second heating section 52 heats the wafer W and wafer guide 40 that are in contact with the susceptor 30. As shown in Figure 2, in the first embodiment, the first heating section 51 and the second heating section 52 are located below the susceptor 30. The first heating section 51 and the second heating section 52 heat the susceptor 30 by applying heat H to the susceptor 30 from below. The first heating section 51 and the second heating section 52 are located inside the susceptor holding section 61 in the drive section 60. The first heating section 51 and the second heating section 52 are resistance heating heaters. The first heating section 51 and the second heating section 52 are, for example, composed of electric heating wires extending along a plane perpendicular to the vertical direction Z. The first heating section 51 and the second heating section 52 may have any structure as long as they are capable of heating the target object.

[0027] The first heating section 51 is located radially outward from the second heating section 52. The first heating section 51 surrounds the second heating section 52 from the radially outward direction. The first heating section 51 is located below the wafer support section 34 and the guide support section 35. At least a portion of the first heating section 51 overlaps with the wafer support section 34 when viewed in the vertical direction Z. In the first embodiment, the radial inner edge of the first heating section 51 overlaps with the radially outer portion of the wafer support section 34 when viewed in the vertical direction Z. The portion of the first heating section 51 located radially outward from the wafer support section 34 overlaps with the guide support section 35 when viewed in the vertical direction Z. The radially outer portion of the first heating section 51 overlaps with the wafer guide 40 when viewed in the vertical direction Z.

[0028] The second heating section 52 is located radially inward from the first heating section 51. The second heating section 52 is located below the inner section 36. At least a portion of the second heating section 52 overlaps with the inner section 36 when viewed in the vertical direction Z. In the first embodiment, almost the entire second heating section 52 overlaps with the inner section 36 when viewed in the vertical direction Z. The radial outer edge of the second heating section 52 is located below the inner annular section 33. The portion of the second heating section 52 excluding the radial outer edge is located below the movable section 32.

[0029] As shown in Figure 1, the third heating section 53 is annular in shape surrounding the supply pipe 24. In the first embodiment, the vapor phase growth apparatus 10 includes three third heating sections 53. The three third heating sections 53 are spaced apart in the vertical direction Z. Each third heating section 53 heats the gas G passing through the inside of the supply pipe 24. This increases the temperature of the gas G when it reaches the wafer W. Therefore, the deposition rate of the SiC film formed on the surface of the wafer W can be increased. The number of third heating sections 53 in the vapor phase growth apparatus 10 may be two or fewer, or four or more. The third heating section 53 is, for example, a resistance heating type heater composed of an electric heating wire. The third heating section 53 may have any structure as long as it can heat the target.

[0030] The first temperature sensor 71 and the second temperature sensor 72 are temperature sensors capable of measuring the temperature of the wafer W. In the first embodiment, the first temperature sensor 71 and the second temperature sensor 72 are radiation thermometers. The first temperature sensor 71 and the second temperature sensor 72 are located outside the chamber 20. The first temperature sensor 71 and the second temperature sensor 72 are located above the window portion 23. The first temperature sensor 71 and the second temperature sensor 72 measure the temperature of the wafer W by receiving infrared radiation emitted from the wafer W through the window portion 23. The first temperature sensor 71 and the second temperature sensor 72 are, for example, adjustable in the radial direction.

[0031] As shown in Figure 2, the first temperature sensor 71 can measure the temperature of the portion of the wafer W that overlaps with the wafer support portion 34 when viewed in the vertical direction Z. The second temperature sensor 72 can measure the temperature of the portion of the wafer W that overlaps with the inner portion 36 when viewed in the vertical direction Z. In the first embodiment, the second temperature sensor 72 can measure the temperature of the portion of the wafer W that is located radially inside the radial outer edge of the movable portion 32 and radially outside the rotation axis R. The second temperature sensor 72 can measure the temperature of the portion of the wafer W that is located radially inside the radial center between the radial inner edge of the wafer support portion 34 and the rotation axis R.

[0032] In this specification, "a temperature sensor is capable of measuring the temperature of a certain portion of a wafer" means that the temperature sensor can be positioned in a location where it can measure the temperature of a certain portion of the wafer. In the first embodiment, the first temperature sensor 71 is movable to a position where it can measure the temperature of the portion of the wafer W that overlaps with the wafer support portion 34 when viewed in the vertical direction Z. The second temperature sensor 72 is movable to a position where it can measure the temperature of the portion of the wafer W that overlaps with the inner portion 36 when viewed in the vertical direction Z.

[0033] Figure 5 is a block diagram showing a part of the vapor phase growth apparatus 10. As shown in Figure 5, the vapor phase growth apparatus 10 includes a control unit 90. The control unit 90 controls each part of the vapor phase growth apparatus 10. The control unit 90 controls the first heating unit 51, the second heating unit 52, the third heating unit 53, the drive unit 60, the lifting unit 80, and the transport unit 100.

[0034] Figure 6 is a flowchart showing an example of a procedure for a film deposition method using a vapor phase growth apparatus 10 to form a film on the surface of a wafer W. As shown in Figure 6, the control unit 90 places the wafer W on the susceptor 30 (step S110). In step S110, the control unit 90 transports the wafer W using the transport unit 100 and places the wafer W on the movable unit 32, which has been moved to the upper side as shown in Figure 4. The control unit 90 controls the lifting unit 80 to move the movable unit 32 downward and places the wafer W on the movable unit 32 onto the wafer support unit 34. Thus, the wafer W is placed on the susceptor 30.

[0035] After the wafer W is placed on the susceptor 30, the control unit 90 performs a film deposition process to form a film on the surface of the wafer W (step S120). In other words, the film deposition method in the first embodiment includes a film deposition process to form a film on the surface of the wafer W. During the film deposition process, the control unit 90 rotates the wafer W around the rotation axis R (step S121) and heats the wafer W (step S122). During the film deposition process, the control unit 90 rotates the wafer W around the rotation axis R by rotating the susceptor 30 around the rotation axis R using the drive unit 60. During the film deposition process, the control unit 90 heats the wafer W by heating the susceptor 30 with the first heating unit 51 and the second heating unit 52. The rotation and heating of the wafer W are performed until the film deposition process is completed.

[0036] In the film deposition process, the control unit 90 controls the temperature of the wafer W (step S123). In step S123, as shown in Figure 2, the control unit 90 uses the first temperature sensor 71 to measure the temperature of the portion of the wafer W that overlaps with the wafer support portion 34 when viewed in the vertical direction Z. In step S123, the control unit 90 uses the second temperature sensor 72 to measure the temperature of the portion of the wafer W that overlaps with the inner portion 36 when viewed in the vertical direction Z. In the first embodiment, in step S123, the control unit 90 uses the second temperature sensor 72 to measure the temperature of the portion of the wafer W that is radially inside the radial outer edge of the movable portion 32 and radially outside the rotation axis R. In step S123, the control unit 90 uses the second temperature sensor 72 to measure the temperature of the portion of the wafer W that is radially inside the radial center between the radial inner edge of the wafer support portion 34 and the rotation axis R.

[0037] In step S123, the control unit 90 controls the first heating unit 51 and the second heating unit 52 based on the measurement results of the first temperature sensor 71 and the second temperature sensor 72. In other words, the film formation process in the film formation method of the first embodiment includes controlling the first heating unit 51 and the second heating unit 52 based on the measurement results of the first temperature sensor 71 and the second temperature sensor 72.

[0038] In the first embodiment, in step S123, the control unit 90 controls the first heating unit 51 and the second heating unit 52 so that the difference between the temperature measured by the first temperature sensor 71 and the temperature measured by the second temperature sensor 72 is less than or equal to a predetermined value. In other words, the film formation process in the film formation method of the first embodiment includes controlling the first heating unit 51 and the second heating unit 52 so that the difference between the temperature measured by the first temperature sensor 71 and the temperature measured by the second temperature sensor 72 is less than or equal to a predetermined value. This predetermined value is, for example, 10°C. This predetermined value may be lower than 10°C or higher than 10°C. The control unit 90 controls the first heating unit 51 and the second heating unit 52 so that the temperature of the wafer W measured by the first temperature sensor 71 and the temperature of the wafer W measured by the second temperature sensor 72 are, for example, 1500°C or more and 1650°C or less. The first target temperature, set as the target value for the temperature of the wafer W measured by the first temperature sensor 71, and the second target temperature, set as the target value for the temperature of the wafer W measured by the second temperature sensor 72, are set within a temperature range of, for example, 1500°C or higher and 1650°C or lower. The first target temperature is, for example, 1600°C. The second target temperature is, for example, 1610°C.

[0039] In the film deposition process, the control unit 90 introduces gas G containing the raw material gas into the chamber 20 from the supply port 21 and supplies gas G to the wafer W (step S124). In the film deposition process, the control unit 90 performs gas flow rate control to control the flow rate of gas G and pressure control to control the pressure inside the chamber 20. By supplying the raw material gas to the heated surface Wa of the wafer W, a SiC film is formed on the surface Wa of the wafer W. By continuing to supply the raw material gas to the wafer W for a predetermined time, a SiC film of the desired thickness is formed on the surface Wa of the wafer W. By rotating the wafer W around the rotation axis R by the drive unit 60 while supplying the raw material gas to the surface Wa of the wafer W, the amount of raw material gas supplied and variations in the raw material gas within the plane of the surface Wa of the wafer W can be reduced. Therefore, the uniformity of the thickness of the film formed on the wafer W can be improved. In the film deposition process, the control unit 90 heats the gas G in the supply pipe 24 with the third heating unit 53. When the film deposition process is complete, the control unit 90 stops the drive unit 60 and each heating unit, and also stops the supply of gas G into the chamber 20.

[0040] The step S123 described above, which controls the temperature of the wafer W, is performed continuously, for example, during the film deposition process. Step S123 may be performed at predetermined intervals. Step S121, which rotates the wafer W, may be started after the wafer W has been heated to a predetermined temperature and before the gas G is supplied.

[0041] After the film deposition process is completed, the control unit 90 removes the wafer W from the vapor phase growth apparatus 10 (step S130). In step S130, the control unit 90 raises the movable part 32 using the lifting unit 80 to lift the wafer W. The control unit 90 then transports the lifted wafer W using the transport unit 100.

[0042] In conventional vapor deposition apparatuses, the wafer W could shift during the film deposition process, causing its outer edge to become trapped between the wafer guide and the susceptor. In this case, film formation would not occur on the outer edge of the wafer W trapped between the wafer guide and the susceptor, resulting in variations in the thickness of the film formed on the wafer W and a decrease in the film deposition accuracy. Additionally, during wafer transport, the wafer W could get caught in the wafer guide, causing problems with wafer transport. The film deposition accuracy of the film formed on the wafer W includes the uniformity of the film thickness and the uniformity of the carrier concentration in the film formed on the wafer W.

[0043] To address the above-mentioned problems, according to the first embodiment, the vapor phase growth apparatus 10 is a vapor phase growth apparatus for forming a film on the surface of a wafer W. The vapor phase growth apparatus 10 includes a susceptor 30 that supports the wafer W from below, a drive unit 60 that rotates the susceptor 30 about a rotation axis R extending in the vertical direction Z, an annular wafer guide 40 supported from below by the susceptor 30 and surrounding the outer edge of the wafer W, a first temperature sensor 71 and a second temperature sensor 72 capable of measuring the temperature of the wafer W, a first heating unit 51 and a second heating unit 52 capable of heating the susceptor 30, and a control unit 90 that controls the first heating unit 51 and the second heating unit 52. The susceptor 30 includes a wafer support portion 34 that supports the wafer W from below, a guide support portion 35 located radially outside the wafer support portion 34 in the radial direction centered on the rotation axis R and supporting the wafer guide 40 from below, and an inner portion 36 located radially inside the wafer support portion 34. The wafer support portion 34 has a wafer contact surface 34s that contacts the wafer W. The upper surface 36s of the inner portion 36 is located below the wafer contact surface 34s. The guide support portion 35 has a guide contact surface 35s that contacts the wafer guide 40. The wafer contact surface 34s is located above the guide contact surface 35s. Therefore, when the wafer W is supported from below by the susceptor 30, the back surface Wb of the wafer W is positioned above the guide contact surface 35s and the lower surface of the wafer guide 40. Therefore, even if the wafer W moves radially outward during the film deposition process, it is possible to prevent the wafer W from getting stuck between the susceptor 30 and the wafer guide 40. This prevents the formation of a film on the outer edge of the wafer W from failing. Therefore, it prevents a decrease in the accuracy of film formation on the surface of the wafer W. In addition, it prevents the outer edge of the wafer W from getting caught on the wafer guide 40 when the wafer W is transported. Therefore, it prevents problems from occurring during the transport of the wafer W.

[0044] Since the wafer contact surface 34s is located above the guide contact surface 35s, if the position of the upper surface 36s in the vertical Z direction remains unchanged, the distance between the wafer contact surface 34s and the upper surface 36s of the inner portion 36 in the vertical Z direction will be greater than if the wafer contact surface 34s and the guide contact surface 35s were positioned at the same location in the vertical Z direction. As a result, the distance between the wafer W and the upper surface 36s of the inner portion 36 increases, making it more difficult for heat to be transferred from the susceptor 30 to the portion of the wafer W located above the inner portion 36. On the other hand, the portion of the wafer W that is in contact with the wafer contact surface 34s is in contact with the susceptor 30, and therefore heat is easily transferred from the susceptor 30. Consequently, the temperature difference between the radially inner portion of the wafer W and the radially outer portion of the wafer W tends to increase. A large temperature difference within the wafer W surface may lead to increased variations in the thickness of the film formed on the surface of the wafer W, and variations in the carrier concentration of the film. Furthermore, if etching is performed on the surface Wa of the wafer W before the film deposition process, a large temperature difference within the wafer W surface may lead to greater variation in the amount of etching during the etching process. In this case, the thickness of the film formed on the surface Wa of the wafer W may vary even further. Therefore, even if the wafer W is prevented from entering between the wafer guide 40 and the susceptor 30, the accuracy of film deposition on the wafer may decrease. In addition, a large temperature difference within the wafer W surface may cause crystal defects, i.e., dislocations, to occur in the wafer W.

[0045] In response to the above problem, according to the first embodiment, the first heating unit 51 is located radially outward from the second heating unit 52. In a film deposition process in which a film is formed on the surface of a wafer W, the control unit 90 measures the temperature of the portion of the wafer W that overlaps with the wafer support unit 34 when viewed in the vertical direction Z using the first temperature sensor 71, measures the temperature of the portion of the wafer W that overlaps with the inner portion 36 when viewed in the vertical direction Z using the second temperature sensor 72, and controls the first heating unit 51 and the second heating unit 52 based on the measurement results of the first temperature sensor 71 and the second temperature sensor 72. In other words, the film formation process in the film formation method using the vapor phase growth apparatus 10 to form a film on the surface of a wafer W includes measuring the temperature of the portion of the wafer W that overlaps with the wafer support portion 34 when viewed in the vertical direction Z using a first temperature sensor 71, measuring the temperature of the portion of the wafer W that overlaps with the inner portion 36 when viewed in the vertical direction Z using a second temperature sensor 72, and controlling the first heating unit 51 and the second heating unit 52 based on the measurement results of the first temperature sensor 71 and the second temperature sensor 72. Therefore, the control unit 90 can measure the temperature of the portion of the wafer W that tends to get hot, i.e., the portion that overlaps with the wafer support portion 34 in the vertical direction Z, and the temperature of the portion of the wafer W that tends to get cold, i.e., the portion that overlaps with the inner portion 36 in the vertical direction Z, respectively, using the first temperature sensor 71 and the second temperature sensor 72. As a result, the control unit 90 can adjust the output of the first heating unit 51 and the output of the second heating unit 52 so that the temperature difference within the wafer W surface does not become large. Specifically, the control unit 90 controls the output of the first heating unit 51 and the second heating unit 52 so that, for example, the temperature of the portion of the wafer W that overlaps with the wafer support portion 34 in the vertical direction Z becomes 1600°C, and the temperature of the portion of the wafer W that overlaps with the inner portion 36 in the vertical direction Z becomes 1610°C. This makes it easier to raise the temperature of the portion of the wafer W that overlaps with the inner portion 36 in the vertical direction Z, while suppressing the temperature of the portion of the wafer W that overlaps with the wafer support portion 34 in the vertical direction Z from becoming too high. Therefore, it is possible to suppress large temperature differences within the wafer W surface. As a result, it is possible to suppress variations in the thickness of the film formed on the surface Wa of the wafer W and the carrier concentration of the film.Therefore, even if a structure is adopted in which the wafer contact surface 34s is located above the guide contact surface 35s, it is possible to suppress a decrease in the film deposition accuracy of the film formed on the surface of the wafer W. In addition, since it is possible to suppress large temperature differences within the wafer W surface, it is possible to suppress the occurrence of crystal defects in the wafer W.

[0046] As described above, according to the first embodiment, it is possible to suppress the wafer W from getting stuck between the susceptor 30 and the wafer guide 40, while also suppressing a large temperature difference within the wafer W surface. Therefore, it is possible to suitably suppress a decrease in the film deposition accuracy of the film formed on the surface of the wafer W. Furthermore, it is possible to suppress malfunctions in the transport of the wafer W and the occurrence of crystal defects in the wafer W.

[0047] Furthermore, since the wafer contact surface 34s is located above the guide contact surface 35s, even if reaction products (deposits) accumulate on the portion of the guide contact surface 35s located radially inward from the radial inner edge of the wafer guide 40 during the film deposition process, it is possible to suppress contact between these reaction products and the back surface Wb of the wafer W supported by the wafer contact surface 34s. This prevents the reaction products from adhering to the back surface Wb of the wafer W.

[0048] According to the first embodiment, in the film deposition process, the control unit 90 controls the first heating unit 51 and the second heating unit 52 so that the difference between the temperature measured by the first temperature sensor 71 and the temperature measured by the second temperature sensor 72 is less than or equal to a predetermined value. In other words, the film deposition process includes controlling the first heating unit 51 and the second heating unit 52 so that the difference between the temperature measured by the first temperature sensor 71 and the temperature measured by the second temperature sensor 72 is less than or equal to a predetermined value. Therefore, it is easier to keep the temperature difference within the wafer W surface below a predetermined value, and it is more effectively possible to suppress an increase in the temperature difference within the wafer W surface. Consequently, it is possible to further suppress a decrease in the film deposition accuracy of the film formed on the surface of the wafer W.

[0049] According to the first embodiment, the wafer contact surface 34s is located below the upper end of the inner circumferential surface of the wafer guide 40. Therefore, it is possible to prevent the back surface Wb of the wafer W that contacts the wafer contact surface 34s from being located above the upper end of the inner circumferential surface of the wafer guide 40. As a result, even if the wafer W moves radially outward during the film deposition process, it is possible to prevent the wafer W from riding up onto the wafer guide 40 and to prevent the wafer W from flying radially outward from the wafer support portion 34.

[0050] According to the first embodiment, the upper surface 36s of the inner portion 36 is located below the guide contact surface 35s. Therefore, even if the wafer W bends downward, contact between the back surface Wb of the wafer W and the upper surface 36s of the inner portion 36 can be suppressed, and the portion of the wafer W supported by the wafer support portion 34 can be suppressed from lifting. In this case, the distance between the wafer W and the upper surface 36s of the inner portion 36 becomes larger, and the temperature of the portion of the wafer W located above the inner portion 36 tends to be lower. However, by controlling the temperature with the control unit 90 as described above, it is possible to suppress a large temperature difference within the wafer W surface. In other words, the effect of suppressing a large temperature difference within the wafer W surface is more usefully obtained in a configuration where the upper surface 36s of the inner portion 36 is located below the guide contact surface 35s.

[0051] According to the first embodiment, the inner portion 36 has a movable portion 32 that can move in the vertical direction Z. In the film deposition process, the control unit 90 measures the temperature of the portion of the wafer W located radially inside the radial outer edge of the movable portion 32 and radially outside the rotation axis R using the second temperature sensor 72. In other words, the film deposition process includes measuring the temperature of the portion of the wafer W located radially inside the radial outer edge of the movable portion 32 and radially outside the rotation axis R using the second temperature sensor 72. Therefore, compared to measuring the temperature of the portion of the wafer W located radially outside the movable portion 32 using the second temperature sensor 72, the temperature of the portion of the wafer W that is further radially inward from the wafer support portion 34 can be measured by the second temperature sensor 72. The temperature of the wafer W tends to decrease as it moves radially inward from the wafer support portion 34. Therefore, the control unit 90 can more effectively suppress large temperature differences within the wafer W surface by measuring the temperature of the portion of the wafer W that is further radially inward from the wafer support portion 34 using the second temperature sensor 72 and controlling the first heating unit 51 and the second heating unit 52. Furthermore, by measuring the temperature of the portion of the wafer W located radially outward from the rotation axis R using the second temperature sensor 72, the temperature can be measured over the entire circumference of the radially inward portion of the wafer W. This makes it easier to measure the temperature of the wafer W and more effectively suppress large temperature differences within the wafer W surface compared to measuring the temperature only at the center of the wafer W through which the rotation axis R passes using the second temperature sensor 72.

[0052] According to the first embodiment, at least a portion of the first heating unit 51 overlaps with the wafer support unit 34 when viewed in the vertical direction Z. Therefore, the temperature in the wafer support unit 34 can be easily adjusted by changing the output of the first heating unit 51. This makes it easier to adjust the temperature of the portion of the wafer W supported by the wafer support unit 34.

[0053] According to the first embodiment, at least a portion of the second heating unit 52 overlaps with the inner portion 36 when viewed in the vertical direction Z. Therefore, the temperature in the inner portion 36 can be easily adjusted by changing the output of the second heating unit 52. This makes it easier to adjust the temperature of the portion of the wafer W located above the inner portion 36.

[0054] According to the first embodiment, the wafer support portion 34 has a plurality of first recesses 34c that are recessed downward from the upper surface of the wafer support portion 34, and is annular in shape surrounding the rotation axis R. The plurality of first recesses 34c are spaced apart in the circumferential direction around the rotation axis R when viewed in the vertical direction Z. Because the wafer support portion 34 is annular, it is easier for the wafer W to be supported more stably from below by the wafer support portion 34. In addition, the formation of a plurality of first recesses 34c reduces the contact area between the wafer support portion 34 and the wafer W. This makes it difficult for heat to be transferred from the wafer support portion 34 to the wafer W, and further suppresses the temperature of the portion of the wafer W supported by the wafer support portion 34 from becoming too high. Furthermore, when placing the wafer W on the wafer support portion 34, the gas in the space between the wafer W and the inner portion 36 can be easily released to the outside through the plurality of first recesses 34c. This makes it easier to place the wafer W on the annular wafer support portion 34, and also suppresses displacement of the wafer W in the radial and rotational directions when the wafer W is placed on it.

[0055] The following describes embodiments that differ from those described above. In the following descriptions of each embodiment, components similar to those described in the section above may be omitted from the description by using the same reference numerals as appropriate. Also, for parts corresponding to the components described in the section above each embodiment, the same name and different reference numerals will be used to explain the differences from the above-described configuration, while the explanation of similar components may be omitted. Note that, within the scope of consistency, components similar to those described in the section above each embodiment may be adopted as components whose description is omitted.

[0056] (Second embodiment) Figure 7 is a cross-sectional view showing a part of the vapor phase growth apparatus 110 of the second embodiment. As shown in Figure 7, in the second embodiment, the susceptor body 131 is formed by two members, a first member 131a and a second member 131b. The shape of the susceptor body 131 formed by the two members, the first member 131a and the second member 131b, is the same as the shape of the integrally molded susceptor body 31 of the first embodiment.

[0057] The first member 131a and the second member 131b are annular in shape, surrounding the axis of rotation R. More specifically, the first member 131a and the second member 131b are substantially annular in shape, centered on the axis of rotation R. The second member 131b is located above the first member 131a. The lower surface of the second member 131b is in contact with the upper surface of the first member 131a. The second member 131b is fixed to the first member 131a. The inner diameter of the second member 131b is larger than the inner diameter of the first member 131a. The radial inner edge of the first member 131a is located radially inward from the radial inner edge of the second member 131b. The portion of the first member 131a located radially inward from the radial inner edge of the second member 131b is the inner annular portion 33. The second member 131b includes a wafer support portion 134 having a wafer contact surface 34s and a guide support portion 135 having a guide contact surface 35s. The other configurations of the vapor phase growth apparatus 110 are the same as the other configurations of the vapor phase growth apparatus 10 in the first embodiment.

[0058] (Third embodiment) Figure 8 is a cross-sectional view showing a part of the vapor phase growth apparatus 210 of the third embodiment. As shown in Figure 8, in the susceptor body 231 of the third embodiment, the wafer contact surface 234s of the wafer support portion 234 has a flat surface 234d and an inclined surface 234e. The flat surface 234d is the radially outer portion of the wafer contact surface 234s. The flat surface 234d is a flat surface perpendicular to the vertical direction Z. The inclined surface 234e is the radially inner portion of the wafer contact surface 234s. The inclined surface 234e is located on the lower side as it moves radially inward. The radially outer end of the inclined surface 234e connects to the radially inner end of the flat surface 234d. In a cross-section perpendicular to the circumferential direction, the inclined surface 234e extends diagonally radially inward and downward from the radially inner end of the flat surface 234d. The inclined surface 234e connects to the radially inner surface of the wafer support portion 234. More specifically, the radially inner end of the inclined surface 234e connects to the upper end of the radially inner surface of the wafer support portion 234. The radial dimension of the inclined surface 234e is greater than the radial dimension of the plane 234d. Note that the radial dimension of the inclined surface 234e may be the same as the radial dimension of the plane 234d, or it may be smaller than the radial dimension of the plane 234d. Although not shown in the figures, multiple wafer contact surfaces 234s are provided spaced apart in the circumferential direction, similar to the first embodiment.

[0059] Figure 9 is a cross-sectional view showing a deformed wafer W during a film deposition process using the vapor phase growth apparatus 210 of the third embodiment. As shown in Figure 9, during the film deposition process, the wafer W may bend due to its own weight, causing it to curve into a shape that is convex downwards in a cross-section along the rotation axis R. In this case, the radially outer portion of the wafer W supported from below by the wafer support portion 234 becomes positioned higher as it extends radially outward. When the wafer W deforms into the shape shown in Figure 9, the portion of the back surface Wb of the wafer W that contacts the wafer support portion 234 comes into contact with the inclined surface 234e.

[0060] The susceptor 230 has a connecting portion 238 located radially between the wafer support portion 234 and the guide support portion 235. The connecting portion 238 is annular, surrounding the axis of rotation R. More specifically, the connecting portion 238 is annular, centered on the axis of rotation R. The connecting portion 238 connects the radial outer edge of the wafer support portion 234 and the radial inner edge of the guide support portion 235. The upper surface of the connecting portion 238 is located below the wafer contact surface 234s of the wafer support portion 234 and the guide contact surface 235s of the guide support portion 235. As a result, the susceptor 230 has a second recess 239 that is recessed downwards, located radially between the wafer support portion 234 and the guide support portion 235. The second recess 239 is annular, surrounding the axis of rotation R. More specifically, the second recess 239 is annular, centered on the axis of rotation R. The bottom surface 239s of the second recess 239 is located below the wafer contact surface 234s and the guide contact surface 235s. The bottom surface 239s of the second recess 239 is located below the bottom surface of the first recess 34c. The bottom surface 239s of the second recess 239 is the upper surface of the connection portion 238.

[0061] The radial width of the wafer support portion 234 is greater than the radial width of the second recess 239. In other words, the radial distance between the radial inner end of the wafer support portion 234 and the radial outer end of the wafer support portion 234 is greater than the radial distance between the radial inner end of the second recess 239 and the radial outer end of the second recess 239.

[0062] In the third embodiment, the radial inner edge of the guide support portion 235 is located radially outward from the radial inner edge of the wafer guide 240. The radial inner edge of the guide contact surface 235s is located radially outward from the radial inner edge of the wafer guide 240. The other configurations of the susceptor 230 are the same as those of the susceptor 30 in the first embodiment. The susceptor 230 may be composed of two members, as in the second embodiment.

[0063] In the third embodiment, the upper surface of the wafer guide 240 has a wafer guide inclined surface 241. The wafer guide inclined surface 241 is the radially inner portion of the upper surface of the wafer guide 240. The radial inner edge of the wafer guide inclined surface 241 is the radial inner edge of the upper surface of the wafer guide 240. The radial inner edge of the wafer guide inclined surface 241 connects to the upper end of the radially inner surface of the wafer guide 240. The wafer guide inclined surface 241 is positioned higher as it moves radially outward. The wafer guide inclined surface 241 is an annular shape surrounding the axis of rotation R. More specifically, the wafer guide inclined surface 241 is an annular shape centered on the axis of rotation R when viewed in the vertical direction Z. By providing the wafer guide inclined surface 241, the gas G that is blown onto the surface Wa of the wafer W from above and then flows radially outward can be easily guided radially outward by the wafer guide inclined surface 241. This makes it possible to regulate the flow of gas G in the film deposition process. The radially inner end of the wafer guide 240 faces the radially outer portion of the bottom surface 239s of the second recess 239 with a gap in the vertical Z direction. The other configurations of the wafer guide 240 are the same as those of the wafer guide 40 in the first embodiment.

[0064] In the film deposition process of the third embodiment, the control unit 90 measures the temperature of the portion of the wafer W that overlaps with the inclined surface 234e when viewed in the vertical direction Z using the first temperature sensor 71. In other words, in the film deposition method of the third embodiment, the film deposition process includes measuring the temperature of the portion of the wafer W that overlaps with the inclined surface 234e when viewed in the vertical direction Z using the first temperature sensor 71. Other controls of the control unit 90 are the same as other controls in the first embodiment. Other configurations of the vapor phase growth apparatus 210 are the same as other configurations of the vapor phase growth apparatus 10 in the first embodiment.

[0065] According to the third embodiment, the wafer contact surface 234s has an inclined surface 234e that is located on the lower side as it moves radially inward. Therefore, when the wafer W is deformed as shown in Figure 9, the back surface Wb of the wafer W can be brought into contact with the inclined surface 234e. This makes it easier to increase the contact area between the wafer W and the wafer support portion 234 when the wafer W is deformed as shown in Figure 9, and makes it easier to stably support the wafer W from below with the wafer support portion 234. Furthermore, according to the third embodiment, in the film deposition process, the control unit 90 measures the temperature of the portion of the wafer W that overlaps with the inclined surface 234e when viewed in the vertical direction Z using the first temperature sensor 71. In other words, the film deposition process includes measuring the temperature of the portion of the wafer W that overlaps with the inclined surface 234e when viewed in the vertical direction Z using the first temperature sensor 71. Therefore, when the wafer W deforms as shown in Figure 9 and the back surface Wb of the wafer W comes into contact with the inclined surface 234e, the temperature of the portion of the wafer W that is in contact with the inclined surface 234e, which is most likely to become hot, can be measured by the first temperature sensor 71. As a result, by controlling each heating section based on the measurement results of the first temperature sensor 71, it is possible to further suppress the increase in temperature differences within the wafer W surface. Consequently, it is possible to further suppress the decrease in the film deposition accuracy of the film formed on the surface of the wafer W.

[0066] According to the third embodiment, the susceptor 230 has a second recess 239 that is recessed downwards between the wafer support portion 234 and the guide support portion 235 in the radial direction. The bottom surface 239s of the second recess 239 is located below the guide contact surface 235s. Therefore, the portion of the upper surface of the susceptor 230 located radially outward from the wafer support portion 234 can be positioned further downward from the wafer W compared to the case where the second recess 239 is not provided. This suppresses the temperature of the radial outer edge of the wafer W from rising. Consequently, it is possible to further suppress the increase in temperature differences within the wafer W surface. Furthermore, when reaction products (deposits) are deposited between the wafer contact surface 234s and the guide contact surface 235s in the radial direction on the upper surface of the susceptor 230 during the film deposition process, the reaction products are deposited on the bottom surface 239s, which is located below the guide contact surface 235s. This further suppresses the reaction products deposited on the bottom surface 239s from contacting the back surface Wb of the wafer W. This further suppresses the adhesion of reaction products to the back surface Wb of the wafer W.

[0067] According to the third embodiment, the radial distance between the radial inner end of the wafer support portion 234 and the radial outer end of the wafer support portion 234 is greater than the radial distance between the radial inner end of the second recess 239 and the radial outer end of the second recess 239. Therefore, the radial width of the wafer support portion 234 can be easily increased, and the wafer W can be stably supported by the wafer support portion 234. In addition, since the radial width of the region in which the wafer W overlaps with the wafer support portion 234 when viewed in the vertical direction Z can be increased, the temperature of the portion of the wafer W that overlaps with the wafer support portion 234 in the vertical direction Z can be easily measured by the first temperature sensor 71.

[0068] According to at least one embodiment described above, the vapor phase growth apparatus is a vapor phase growth apparatus for forming a film on the surface of a wafer. The vapor phase growth apparatus of the embodiment includes a susceptor that supports the wafer from below, a drive unit that rotates the susceptor about a rotation axis extending in the vertical direction, an annular wafer guide supported from below by the susceptor and surrounding the outer edge of the wafer, a first temperature sensor and a second temperature sensor capable of measuring the temperature of the wafer, a first heating unit and a second heating unit capable of heating the susceptor, and a control unit that controls the first heating unit and the second heating unit. The susceptor has a wafer support unit that supports the wafer from below, a guide support unit located outside the wafer support unit in the radial direction centered on the rotation axis and supporting the wafer guide from below, and an inner unit located radially inside the wafer support unit. The wafer support unit has a wafer contact surface that contacts the wafer. The upper surface of the inner unit is located below the wafer contact surface. The guide support unit has a guide contact surface that contacts the wafer guide. The wafer contact surface is located above the guide contact surface. The first heating section is located radially outward from the second heating section. In the film deposition process for forming a film on the wafer surface, the control unit measures the temperature of the portion of the wafer that overlaps with the wafer support section when viewed vertically using a first temperature sensor, and measures the temperature of the portion of the wafer that overlaps with the inner portion when viewed vertically using a second temperature sensor. The control unit then controls the first and second heating sections based on the measurement results of the first and second temperature sensors. As a result, as described above, it is possible to suppress the wafer from getting stuck between the susceptor and the wafer guide while suppressing large temperature differences within the wafer, thereby effectively suppressing a decrease in the film deposition accuracy of the film formed on the wafer surface.

[0069] In the film deposition process, the control unit may control the first heating unit and the second heating unit in any way, as long as it controls them based on the measurement results of the first temperature sensor and the second temperature sensor. The wafer contact surface may be located above the guide contact surface, at the same vertical position as the upper end of the radially inner end of the wafer guide, or it may be located above the upper end of the radially inner end of the wafer guide. The upper surface of the inner part located radially inside the wafer support may be located below the wafer contact surface, at the same vertical position as the guide contact surface, or it may be located above the guide contact surface. Multiple wafer support parts may be provided at intervals in the circumferential direction around the rotation axis. The first temperature sensor and the second temperature sensor may be of any type as long as they can measure the temperature of the wafer. The first heating unit and the second heating unit may be arranged in any way as long as the first heating unit is located radially outside the second heating unit. The inner part of the susceptor does not necessarily have to have a movable part that can move in the vertical direction.

[0070] The vapor phase growth apparatus and film formation method of the embodiment include the following appended aspects. (Note 1) A vapor phase growth apparatus for forming a film on the surface of a wafer, A susceptor that supports the wafer from below, A drive unit that rotates the susceptor around a rotation axis extending in the vertical direction, Supported from below by the susceptor, an annular wafer guide surrounds the outer edge of the wafer, A first temperature sensor and a second temperature sensor capable of measuring the temperature of the wafer, The susceptor is heated by a first heating section and a second heating section, A control unit that controls the first heating unit and the second heating unit, Equipped with, The susceptor is, A wafer support portion that supports the wafer from below, A guide support portion located outside the wafer support portion in the radial direction centered on the rotation axis, and supporting the wafer guide from below, An inner portion located radially inward from the wafer support portion, It has, The wafer support portion has a wafer contact surface that contacts the wafer, The upper surface of the inner portion is located below the wafer contact surface. The guide support portion has a guide contact surface that contacts the wafer guide, The wafer contact surface is located above the guide contact surface. The first heating section is located radially outward from the second heating section. In the film deposition process in which a film is formed on the surface of the wafer, the control unit, The first temperature sensor measures the temperature of the portion of the wafer that overlaps with the wafer support portion when viewed in the vertical direction. The second temperature sensor measures the temperature of the portion of the wafer that overlaps with the inner portion when viewed in the vertical direction, and, A vapor phase growth apparatus that controls the first heating section and the second heating section based on the measurement results of the first temperature sensor and the measurement results of the second temperature sensor. (Note 2) The vapor phase growth apparatus according to Appendix 1, wherein the control unit controls the first heating unit and the second heating unit so that the difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor is less than or equal to a predetermined value during the film formation process. (Note 3) The vapor phase growth apparatus according to Appendix 1 or Appendix 2, wherein the wafer contact surface is located below the upper end of the inner circumferential surface of the wafer guide. (Note 4) The vapor phase growth apparatus according to any one of Appendix 1 to Appendix 3, wherein the upper surface of the inner portion is located below the guide contact surface. (Note 5) The inner portion has a movable part that can move in the vertical direction. The vapor phase growth apparatus according to any one of the appendices 1 to 4, wherein in the film formation process, the control unit measures the temperature of the portion of the wafer located radially inside the radial outer edge of the movable part and radially outside the rotation axis, using the second temperature sensor. (Note 6) A vapor phase growth apparatus according to any one of the appendices 1 to 5, wherein at least a portion of the first heating section overlaps with the wafer support section when viewed in the vertical direction. (Note 7) A vapor phase growth apparatus according to any one of the appendices 1 to 6, wherein at least a portion of the second heating section overlaps with the inner section when viewed in the vertical direction. (Note 8) The wafer contact surface has an inclined surface that is located on the lower side as it moves inward in the radial direction. In the film deposition process, the control unit measures the temperature of the portion of the wafer that overlaps with the inclined surface when viewed vertically, using the first temperature sensor, according to any one of the appendices 1 to 7 of the vapor phase growth apparatus. (Note 9) The wafer support portion has a plurality of first recesses that are recessed downward from the upper surface of the wafer support portion, and is annular in shape surrounding the axis of rotation. The vapor phase growth apparatus according to any one of the appendices 1 to 8, wherein the plurality of first recesses are arranged at intervals in the circumferential direction around the rotation axis when viewed in the vertical direction. (Note 10) The susceptor has a second recess that is recessed downwards between the wafer support portion and the guide support portion in the radial direction, The vapor phase growth apparatus according to any one of the appendices 1 to 9, wherein the bottom surface of the second recess is located below the guide contact surface. (Note 11) The vapor phase growth apparatus according to Appendix 10, wherein the radial distance between the radial inner end of the wafer support portion and the radial outer end of the wafer support portion is greater than the radial distance between the radial inner end of the second recess and the radial outer end of the second recess. (Note 12) A method for forming a film on the surface of a wafer using a vapor phase growth apparatus, This includes a film deposition process that forms a film on the surface of the wafer, The aforementioned vapor phase growth apparatus is A susceptor that supports the wafer from below, A drive unit that rotates the susceptor around a rotation axis extending in the vertical direction, Supported from below by the susceptor, an annular wafer guide surrounds the outer edge of the wafer, A first temperature sensor and a second temperature sensor capable of measuring the temperature of the wafer, The susceptor is heated by a first heating section and a second heating section, Equipped with, The susceptor is, A wafer support portion that supports the wafer from below, A guide support portion located outside the wafer support portion in the radial direction centered on the rotation axis, and supporting the wafer guide from below, An inner portion located radially inward from the wafer support portion, It has, The wafer support portion has a wafer contact surface that contacts the wafer, The upper surface of the inner portion is located below the wafer contact surface. The guide support portion has a guide contact surface that contacts the wafer guide, The wafer contact surface is located above the guide contact surface. The first heating section is located radially outward from the second heating section. The aforementioned film formation process is The first temperature sensor measures the temperature of the portion of the wafer that overlaps with the wafer support portion when viewed in the vertical direction, The second temperature sensor measures the temperature of the portion of the wafer that overlaps with the inner portion when viewed in the vertical direction, The first heating unit and the second heating unit are controlled based on the measurement results of the first temperature sensor and the measurement results of the second temperature sensor. A film deposition method including the above. (Note 13) The film formation method according to Appendix 12, wherein the film formation process includes controlling the first heating unit and the second heating unit so that the difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor is less than or equal to a predetermined value. (Note 14) The inner portion has a movable part that can move in the vertical direction. The film deposition method according to Appendix 12 or Appendix 13, wherein the film deposition process includes measuring the temperature of a portion of the wafer located radially inside the radial outer edge of the movable portion and radially outside the rotation axis, using the second temperature sensor. (Note 15) The wafer contact surface has an inclined surface that is located on the lower side as it moves inward in the radial direction. The film deposition method according to any one of Appendix 12 to Appendix 14, wherein the film deposition process includes measuring the temperature of the portion of the wafer that overlaps with the inclined surface when viewed in the vertical direction using the first temperature sensor.

[0071] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0072] 10, 110, 210…Vapor phase growth apparatus, 30, 230…Susceptor, 32…Movable part, 34, 134, 234…Wafer support part, 34c…First recess, 34s, 234s…Wafer contact surface, 35, 135, 235…Guide support part, 35s, 235s…Guide contact surface, 36…Inner part, 36s…Top surface, 40, 240…Wafer guide, 51…First heating part, 52…Second heating part, 60…Drive unit, 71…First temperature sensor, 72…Second temperature sensor, 90…Control unit, 234e…Inclined surface, 239…Second recess, 239s…Bottom surface, R…Rotation axis, W…Wafer, Z…Vertical direction

Claims

1. A vapor phase growth apparatus for forming a film on the surface of a wafer, A susceptor that supports the wafer from below, A drive unit that rotates the susceptor around a rotation axis extending in the vertical direction, Supported from below by the susceptor, an annular wafer guide surrounds the outer edge of the wafer, A first temperature sensor and a second temperature sensor capable of measuring the temperature of the wafer, The susceptor is heated by a first heating section and a second heating section, A control unit that controls the first heating unit and the second heating unit, Equipped with, The susceptor is, A wafer support portion that supports the wafer from below, A guide support portion located outside the wafer support portion in the radial direction centered on the rotation axis, and supporting the wafer guide from below, An inner portion located radially inward from the wafer support portion, It has, The wafer support portion has a wafer contact surface that contacts the wafer, The upper surface of the inner portion is located below the wafer contact surface. The guide support portion has a guide contact surface that contacts the wafer guide, The wafer contact surface is located above the guide contact surface. The first heating section is located radially outward from the second heating section. In the film deposition process in which a film is formed on the surface of the wafer, the control unit, The first temperature sensor measures the temperature of the portion of the wafer that overlaps with the wafer support portion when viewed in the vertical direction. The second temperature sensor measures the temperature of the portion of the wafer that overlaps with the inner portion when viewed in the vertical direction, and, A vapor phase growth apparatus that controls the first heating section and the second heating section based on the measurement results of the first temperature sensor and the measurement results of the second temperature sensor.

2. The vapor phase growth apparatus according to claim 1, wherein in the film formation process, the control unit controls the first heating unit and the second heating unit so that the difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor is less than or equal to a predetermined value.

3. The vapor phase growth apparatus according to claim 1, wherein the wafer contact surface is located below the upper end of the inner circumferential surface of the wafer guide.

4. The vapor phase growth apparatus according to claim 1, wherein the upper surface of the inner portion is located below the guide contact surface.

5. The inner portion has a movable part that can move in the vertical direction. The vapor phase growth apparatus according to claim 1, wherein in the film formation process, the control unit measures the temperature of the portion of the wafer located radially inside the radial outer edge of the movable part and radially outside the rotation axis using the second temperature sensor.

6. The vapor phase growth apparatus according to any one of claims 1 to 5, wherein at least a portion of the first heating section overlaps with the wafer support section when viewed in the vertical direction.

7. The vapor phase growth apparatus according to any one of claims 1 to 5, wherein at least a portion of the second heating section overlaps with the inner section when viewed in the vertical direction.

8. The wafer contact surface has an inclined surface that is located on the lower side as it moves inward in the radial direction. The vapor phase growth apparatus according to any one of claims 1 to 5, wherein in the film formation process, the control unit measures the temperature of the portion of the wafer that overlaps with the inclined surface when viewed in the vertical direction using the first temperature sensor.

9. The wafer support portion has a plurality of first recesses that are recessed downward from the upper surface of the wafer support portion, and is annular in shape surrounding the axis of rotation. The vapor phase growth apparatus according to any one of claims 1 to 5, wherein the plurality of first recesses are arranged at intervals in the circumferential direction around the rotation axis when viewed in the vertical direction.

10. The susceptor has a second recess that is recessed downwards between the wafer support portion and the guide support portion in the radial direction, The vapor phase growth apparatus according to any one of claims 1 to 5, wherein the bottom surface of the second recess is located below the guide contact surface.

11. The vapor phase growth apparatus according to claim 10, wherein the radial distance between the radial inner end of the wafer support portion and the radial outer end of the wafer support portion is greater than the radial distance between the radial inner end of the second recess and the radial outer end of the second recess.

12. A method for forming a film on the surface of a wafer using a vapor phase growth apparatus, This includes a film deposition process that forms a film on the surface of the wafer, The aforementioned vapor phase growth apparatus is A susceptor that supports the wafer from below, A drive unit that rotates the susceptor around a rotation axis extending in the vertical direction, Supported from below by the susceptor, an annular wafer guide surrounds the outer edge of the wafer, A first temperature sensor and a second temperature sensor capable of measuring the temperature of the wafer, The susceptor is heated by a first heating section and a second heating section, Equipped with, The susceptor is, A wafer support portion that supports the wafer from below, A guide support portion located outside the wafer support portion in the radial direction centered on the rotation axis, and supporting the wafer guide from below, An inner portion located radially inward from the wafer support portion, It has, The wafer support portion has a wafer contact surface that contacts the wafer, The upper surface of the inner portion is located below the wafer contact surface. The guide support portion has a guide contact surface that contacts the wafer guide, The wafer contact surface is located above the guide contact surface. The first heating section is located radially outward from the second heating section. The aforementioned film formation process is The first temperature sensor measures the temperature of the portion of the wafer that overlaps with the wafer support portion when viewed in the vertical direction, The second temperature sensor measures the temperature of the portion of the wafer that overlaps with the inner portion when viewed in the vertical direction, The first heating unit and the second heating unit are controlled based on the measurement results of the first temperature sensor and the measurement results of the second temperature sensor. A film deposition method including the above.

13. The film formation method according to claim 12, wherein the film formation process includes controlling the first heating unit and the second heating unit so that the difference between the temperature measured by the first temperature sensor and the temperature measured by the second temperature sensor is less than or equal to a predetermined value.

14. The inner portion has a movable part that can move in the vertical direction. The film deposition method according to claim 12 or 13, wherein the film deposition process includes measuring the temperature of a portion of the wafer located radially inside the radial outer edge of the movable portion and radially outside the rotation axis, using the second temperature sensor.

15. The wafer contact surface has an inclined surface that is located on the lower side as it moves inward in the radial direction. The film deposition method according to claim 12 or 13, wherein the film deposition process includes measuring the temperature of the portion of the wafer that overlaps with the inclined surface when viewed in the vertical direction using the first temperature sensor.

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