Power module and method for manufacturing the same

Abstract

The present invention provides a power module that efficiently dissipates heat generated from semiconductor elements and a method for manufacturing the same. [Solution] The power module 100 comprises a base material 110, semiconductor elements 120a to 120c mounted in a semiconductor element mounting area R, and metal members 130a to 130c disposed between the base material 110 and each of the semiconductor elements. When viewed from a direction perpendicular to the semiconductor element mounting area R, the metal member 130a has an extended portion 132a that extends from the position of semiconductor element 120a between semiconductor elements 120a and semiconductor elements 120b, and an extended portion 134a that extends from the position of semiconductor element 120a toward the outside of the semiconductor element mounting area R. The longest line segment L12 that extends within the extended portion and connects the semiconductor element 120a and each position on the outer circumference of the extended portion by the shortest distance is longer than the longest line segment L11 that extends within the extended portion 132a and connects the semiconductor element 120a and each position on the outer circumference of the extended portion 132a by the shortest distance.

Description

Technical Field

[0001] The present disclosure relates to a power module, a method for manufacturing the same, and the like.

Background Art

[0002] Power modules are used in various fields such as automobiles, railways, power supply equipment, and industrial equipment. For example, in addition to a base material and semiconductor elements mounted on the base material, a power module includes various members. Various configurations have been considered for the configuration of the power module (see, for example, Patent Document 1 below).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] From the viewpoint of maintaining normal operation, it is required to efficiently dissipate heat generated from semiconductor elements in a power module.

[0005] One aspect of the present disclosure aims to provide a power module capable of efficiently dissipating heat generated from semiconductor elements. Another aspect of the present disclosure aims to provide a method for manufacturing a power module capable of obtaining such a power module.

Means for Solving the Problems

[0006] The present disclosure relates to the following [1] to [9] and the like. [1] A power module comprising: a substrate having a semiconductor element mounting area; a first semiconductor element and a second semiconductor element mounted on the semiconductor element mounting area; and a metal member disposed between the substrate and the first semiconductor element, wherein, when viewed from a direction perpendicular to the semiconductor element mounting area, the metal member has, as an extension portion extending from the position of the first semiconductor element, a first extension portion located between the first semiconductor element and the second semiconductor element, and a second extension portion extending from the position of the first semiconductor element toward the outside of the semiconductor element mounting area, wherein the length of the longest line segment extending within the second extension portion and connecting the first semiconductor element and each position on the outer circumference of the second extension portion by the shortest distance is longer than the length of the longest line segment extending within the first extension portion and connecting the first semiconductor element and each position on the outer circumference of the first extension portion by the shortest distance. [2] A power module comprising: a substrate having a semiconductor element mounting area; a semiconductor element mounted on the semiconductor element mounting area; and a metal member disposed between the substrate and the semiconductor element, wherein, when viewed from a direction perpendicular to the semiconductor element mounting area, the metal member has an extended portion extending from the position of the semiconductor element, and the length of a line segment extending within the extended portion and connecting the semiconductor element and a position on the outer periphery of the extended portion, on a straight line connecting the position furthest from the semiconductor element among the positions on the outer periphery of the semiconductor element mounting area and the semiconductor element by the shortest distance, is longer than the length of a line segment extending within the extended portion and connecting the semiconductor element and a position on the outer periphery of the extended portion, on a straight line connecting the position closest to the semiconductor element among the positions on the outer periphery of the semiconductor element mounting area and the semiconductor element by the shortest distance. [3] The power module according to [2], wherein a single semiconductor element is mounted in the semiconductor element mounting area. [4] The power module according to [2], wherein a plurality of semiconductor elements are mounted in the semiconductor element mounting area. [5] The power module according to any one of [1] to [4], wherein the metal member contains at least one selected from the group consisting of copper and silver. [6] A method for manufacturing a power module comprising a substrate having a semiconductor element mounting region, a semiconductor element mounted on the semiconductor element mounting region, and a metal member disposed between the substrate and the semiconductor element, the method comprising a forming step of forming the metal member on the semiconductor element mounting region, wherein in the forming step, based on the position of the semiconductor element, at least one of the direction and length of the metal member extending from the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting region is adjusted. [7] A method for manufacturing a power module according to [6], wherein a plurality of semiconductor elements are mounted in the semiconductor element mounting region, and in the forming step, at least one of the direction and length of the metal member extending from the position of the semiconductor elements when viewed from a direction perpendicular to the semiconductor element mounting region is adjusted based on the relative positions of the plurality of semiconductor elements. [8] The method for manufacturing a power module according to [6], wherein in the forming step, the direction and length of the metal member extending from the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting area are adjusted based on the relative position of the semiconductor element and the outer periphery of the semiconductor element mounting area. [9] A method for manufacturing a power module according to any one of [6] to [8], wherein the metal member contains at least one selected from the group consisting of copper and silver. [Effects of the Invention]

[0007] According to one aspect of this disclosure, it is possible to provide a power module capable of efficiently dissipating heat generated from semiconductor elements. According to another aspect of this disclosure, it is possible to provide a method for manufacturing such a power module. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a schematic plan view showing an example of a power module. [Figure 2] Figure 2 is a schematic cross-sectional view along the line II-II in Figure 1. [Figure 3] Figure 3 is a schematic plan view showing another example of a power module. [Figure 4] Figure 4 is a schematic plan view showing another example of a power module. [Figure 5] Figure 5 is a schematic cross-sectional view along the VV line in Figure 4. [Figure 6] Figure 6 is a schematic plan view showing another example of a power module. [Modes for carrying out the invention]

[0009] The embodiments of this disclosure will be described below. However, this disclosure is not limited to the embodiments described below and can be implemented in various ways within the scope of its gist.

[0010] Unless otherwise specified, the materials exemplified herein may be used individually or in combination of two or more. The term "layer" includes not only structures that form a shape across the entire surface when viewed in a plan view, but also structures that form a shape on only a part of the surface. The term "process" includes not only independent processes, but also processes that are not clearly distinguishable from other processes, as long as their intended function is achieved.

[0011] The power module according to the first embodiment comprises a substrate having a semiconductor element mounting area, a first semiconductor element and a second semiconductor element mounted on the semiconductor element mounting area, and a metal member (hereinafter optionally referred to as "metal member M11") disposed between the substrate and the first semiconductor element. When viewed from a direction perpendicular to the semiconductor element mounting area, the metal member M11 has an extension portion extending from the position of the first semiconductor element, which is located between the first semiconductor element and the second semiconductor element, and a second extension portion extending from the position of the first semiconductor element toward the outside of the semiconductor element mounting area. The length of the longest line segment extending within the second extension portion and connecting the first semiconductor element and each position on the outer circumference of the second extension portion by the shortest distance is longer than the length of the longest line segment extending within the first extension portion and connecting the first semiconductor element and each position on the outer circumference of the first extension portion by the shortest distance. In the power module according to the first embodiment, it is sufficient that at least a part of the power module has such a configuration.

[0012] Although heat generated from a semiconductor element is dissipated by diffusing it to various components of the power module via the material in contact with the semiconductor element, when multiple semiconductor elements, such as a first semiconductor element and a second semiconductor element, are mounted in the semiconductor element mounting area, even if the heat generated from the first semiconductor element diffuses toward the second semiconductor element, it may not be sufficiently dissipated due to interference from the heat generated by the second semiconductor element. On the other hand, in the power module according to the first embodiment, the length of the longest line segment extending within the second extension and connecting the first semiconductor element and each position on the outer circumference of the second extension by the shortest distance is longer than the length of the longest line segment extending within the first extension and connecting the first semiconductor element and each position on the outer circumference of the first extension by the shortest distance. In this case, the heat generated from the first semiconductor element diffuses into the second extension, thereby suppressing interference from the heat generated from the second semiconductor element. Furthermore, because the length of the longest line segment extending within the second extension is longer than the length of the longest line segment extending within the first extension, heat can be dissipated to a position far from the first semiconductor element. As described above, the power module according to the first embodiment can efficiently dissipate heat generated from the semiconductor element.

[0013] The power module according to the second embodiment comprises a substrate having a semiconductor element mounting area, a semiconductor element mounted in the semiconductor element mounting area, and a metal member (hereinafter optionally referred to as "metal member M21") disposed between the substrate and the semiconductor element. When viewed from a direction perpendicular to the semiconductor element mounting area, the metal member M21 has an extended portion that extends from the position of the semiconductor element, and the length of the line segment extending within the extended portion and connecting the semiconductor element to a position on the outer periphery of the extended portion, on a straight line connecting the position furthest from the semiconductor element among the positions on the outer periphery of the semiconductor element mounting area with the semiconductor element by the shortest distance, is longer than the length of the line segment extending within the extended portion and connecting the semiconductor element to a position on the outer periphery of the extended portion, on a straight line connecting the position closest to the semiconductor element among the positions on the outer periphery of the semiconductor element mounting area with the semiconductor element by the shortest distance. In the power module according to the second embodiment, it is sufficient if at least a part of the power module has such a configuration.

[0014] Areas within the semiconductor device mounting region that do not contain semiconductor devices can be utilized to dissipate heat generated by those semiconductor devices. In the power module according to the second embodiment, the length of the line segment extending within the extended portion and connecting the semiconductor element to the position on the outer perimeter of the extended portion, along the shortest distance line connecting the position furthest from the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area and the semiconductor element, is longer than the length of the line segment extending within the extended portion and connecting the semiconductor element to the position on the outer perimeter of the extended portion, along the shortest distance line connecting the position closest to the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area and the semiconductor element. In this case, the region between the position furthest from the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area and the semiconductor element (the region where the semiconductor element is not mounted) can be utilized to dissipate the heat generated from the semiconductor element. As a result, the power module according to the second embodiment can efficiently dissipate the heat generated from the semiconductor element.

[0015] In order to dissipate the heat generated from the semiconductor element, it is conceivable to thicken the member located between the base material and the semiconductor element, but this increases the thickness of the power module. Further, when the member located between the base material and the semiconductor element is thickened, damage to the member, peeling between members, etc. may occur due to the temperature difference between the portion on the base material side and the portion on the semiconductor element side of the member located between the base material and the semiconductor element. On the other hand, in the power module according to the present embodiment (the power module according to the first embodiment and the power module according to the second embodiment: the same shall apply hereinafter), with the above-described configuration, it is possible to efficiently dissipate the heat generated from the semiconductor element while suppressing thickening of the member located between the base material and the semiconductor element.

[0016] The power module according to the present embodiment may have the configurations of both the power module according to the first embodiment and the power module according to the second embodiment.

[0017] The power module according to the present embodiment includes a base material having a semiconductor element mounting region (semiconductor element support region). The base material can support the semiconductor element. The semiconductor element mounting region is a region for mounting (supporting) the semiconductor element, and for example, is a region of a continuous same plane (semiconductor element mounting surface: for example, a plane continuous at the same height position). In the power module according to the first embodiment, the first semiconductor element is mounted in the semiconductor element mounting region with at least the metal member M11 positioned between the base material and the first semiconductor element, and the second semiconductor element may be mounted in the semiconductor element mounting region with at least the metal member M12 described later positioned between the base material and the second semiconductor element. In the power module according to the second embodiment, the semiconductor element is mounted in the semiconductor element mounting region with at least the metal member M21 positioned between the base material and the semiconductor element. The direction perpendicular to the semiconductor element mounting region is the direction perpendicular to the plane of the semiconductor element mounting region, and may be the same direction as the thickness direction of the metal members M11 and M21, and may be the same direction as the stacking direction of the base material and the semiconductor element.

[0018] The base material may consist of a single component or multiple components. The base material may include an insulating component (e.g., an insulating layer) and a metal component (e.g., a metal layer) M31 disposed between the insulating component and metal components M11 and M21. In this case, the insulating component and the metal component M31 may be in contact with each other, or they may not be in contact with each other if another component is interposed between them. The base material may include an insulating component, a metal component (e.g., a metal layer) M31 disposed between the insulating component and metal components M11 and M21, and a metal component (e.g., a metal layer) M32 disposed on the opposite side of the insulating component from the metal component M31. In this case, the insulating member and at least one selected from the group consisting of metal member M31 and metal member M32 may be in contact with each other, but the insulating member and metal member M31 may not be in contact with each other if another member is interposed between them, and the insulating member and metal member M32 may not be in contact with each other if another member is interposed between them. Metal member M31 and metal members M11, M21 may be in contact with each other, but the metal member M31 and metal members M11, M21 may not be in contact with each other if another member is interposed between them. In the power module according to the first embodiment, the surface of metal member M31 on the side of the first semiconductor element may be the semiconductor element mounting area. In the power module according to the second embodiment, the surface of metal member M31 on the side of the semiconductor element may be the semiconductor element mounting area.

[0019] When viewed from a direction perpendicular to the semiconductor element mounting area, the area of ​​the insulating member may be larger than the area of ​​at least one selected from the group consisting of the first semiconductor element and the second semiconductor element in the power module according to the first embodiment, may be larger than the area of ​​the semiconductor element in the power module according to the second embodiment, may be larger than the area of ​​at least one selected from the group consisting of the metal member M11 and the metal member M12 described later in the power module according to the first embodiment, may be larger than the area of ​​the metal member M21 in the power module according to the second embodiment, and may be larger than the area of ​​at least one selected from the group consisting of the metal member M31 and the metal member M32.

[0020] As the constituent material of the insulating member in the base material, ceramics can be used. Examples of constituent materials for the insulating member include aluminum oxide, aluminum nitride, and silicon nitride. Examples of metallic elements that constitute at least one selected from the group consisting of metal member M31 and metal member M32 include copper and aluminum. At least one selected from the group consisting of metal member M31 and metal member M32 may contain at least one selected from the group consisting of copper and aluminum.

[0021] The power module according to the first embodiment comprises a first semiconductor element and a second semiconductor element mounted in a semiconductor element mounting area. The first semiconductor element and the second semiconductor element may be supported by an integral insulating member (an insulating member of the base material), or by an integral metal member M31 (a metal member M31 of the base material). The power module according to the first embodiment may comprise only the first semiconductor element and the second semiconductor element as semiconductor elements mounted in the semiconductor element mounting area, or it may comprise other semiconductor elements in addition to the first semiconductor element and the second semiconductor element.

[0022] The power module according to the second embodiment includes semiconductor elements mounted in a semiconductor element mounting area. In the power module according to the second embodiment, a single semiconductor element may be mounted in the semiconductor element mounting area, or multiple semiconductor elements may be mounted in the semiconductor element mounting area.

[0023] In the power module according to this embodiment, the shape, dimensions, and arrangement of the semiconductor elements are not particularly limited.

[0024] The power module according to the first embodiment includes a metal member (e.g., a metal layer) M11 disposed between a substrate and a first semiconductor element. When viewed from a direction perpendicular to the semiconductor element mounting area, the metal member M11 has an extended portion (an extended portion that does not overlap with the first semiconductor element) that extends from the position of the first semiconductor element (a position that overlaps with the first semiconductor element; the same applies hereinafter), which is located between the first semiconductor element and the second semiconductor element, and a second extended portion that extends from the position of the first semiconductor element toward the outside of the semiconductor element mounting area. The first extended portion is located between the first semiconductor element and the second semiconductor element without reaching the position of the second semiconductor element (a position that overlaps with the second semiconductor element; the same applies hereinafter). The first extended portion is located between the first semiconductor element and the second semiconductor element without contacting the metal member M12 described later. The second extended portion extends in a direction in which there are no semiconductor elements mounted in the semiconductor element mounting area. The second extension may or may not reach the outer periphery of the semiconductor element mounting area. When viewed from a direction perpendicular to the semiconductor element mounting area, the metal member M11 may have a central part (e.g., a main section) located at the position of the first semiconductor element, in addition to the extension.

[0025] In the power module according to the first embodiment, when viewed from a direction perpendicular to the semiconductor element mounting area, the first extended portion and the second extended portion are continuous, so that the entire perimeter of the first semiconductor element is surrounded by the first extended portion and the second extended portion, a part of the perimeter of the first semiconductor element is not surrounded by the first extended portion and the second extended portion, and in a part of the perimeter of the first semiconductor element, the first extended portion and the second extended portion do not extend from the position of the first semiconductor element. The shapes of the first extended portion and the second extended portion are not particularly limited. The first extended portion and the second extended portion may each consist of a single part or multiple parts.

[0026] The power module according to the first embodiment may include a metal member (e.g., a metal layer) M12 disposed between the substrate and the second semiconductor element, from the viewpoint of efficiently dissipating heat generated from the semiconductor element. From the viewpoint of efficiently dissipating heat generated from the semiconductor element, similar to the metal member M11, when viewed from a direction perpendicular to the semiconductor element mounting area, the metal member M12 may have an extending portion A located between the first and second semiconductor elements, which extends from the position of the second semiconductor element (an extending portion that does not overlap with the second semiconductor element), and an extending portion B extending from the position of the second semiconductor element toward the outside of the semiconductor element mounting area. The extending portion A is located between the first and second semiconductor elements without reaching the position of the first semiconductor element. The extending portion A is located between the first and second semiconductor elements without contacting the metal member M11. The extending portion B extends in a direction in which there are no semiconductor elements mounted in the semiconductor element mounting area. The extended portion B may or may not reach the outer periphery of the semiconductor element mounting area. When viewed from a direction perpendicular to the semiconductor element mounting area, the metal member M12 may have a central part (e.g., a trunk) located at the position of the second semiconductor element, in addition to the extended portion.

[0027] In the power module according to the first embodiment, when viewed from a direction perpendicular to the semiconductor element mounting area, the extension portion A and the extension portion B are continuous, so that the entire perimeter of the second semiconductor element is surrounded by the extension portion A and the extension portion B, a part of the perimeter of the second semiconductor element is not surrounded by the extension portion A and the extension portion B, and in a part of the perimeter of the second semiconductor element, the extension portion A and the extension portion B do not extend from the position of the second semiconductor element. The shapes of the extension portion A and the extension portion B are not particularly limited. Each of the extension portion A and the extension portion B may consist of a single part or multiple parts.

[0028] The power module according to the second embodiment includes a metal member (e.g., a metal layer) M21 disposed between a substrate and a semiconductor element, and when viewed from a direction perpendicular to the semiconductor element mounting area, the metal member M21 has an extended portion (an extended portion that does not overlap with the semiconductor element) that extends from the position of the semiconductor element (a position that overlaps with the semiconductor element; the same applies hereinafter). The extended portion extends in a direction in which there are no semiconductor elements mounted in the semiconductor element mounting area. The extended portion may or may not reach the outer periphery of the semiconductor element mounting area. When viewed from a direction perpendicular to the semiconductor element mounting area, the metal member M21 may have a central part (e.g., a main body) located at the position of the semiconductor element, in addition to the extended portion.

[0029] In the power module according to the second embodiment, when viewed from a direction perpendicular to the semiconductor element mounting area, the extended portion may be continuous, so that the entire perimeter of the semiconductor element is surrounded by the extended portion, a part of the perimeter of the semiconductor element may not be surrounded by the extended portion, and in a part of the perimeter of the semiconductor element, the extended portion may not extend from the position of the semiconductor element. The shape of the extended portion is not particularly limited. The extended portion may consist of a single part or may consist of multiple parts.

[0030] In the power module according to the first embodiment, at least one selected from the group consisting of metal member M11 and metal member M12 can be placed in the semiconductor element mounting area. When viewed from a direction perpendicular to the semiconductor element mounting area, the entirety of at least one selected from the group consisting of metal member M11 and metal member M12 may be located within the semiconductor element mounting area. In the power module according to the second embodiment, metal member M21 can be placed in the semiconductor element mounting area. When viewed from a direction perpendicular to the semiconductor element mounting area, the entirety of metal member M21 may be located within the semiconductor element mounting area.

[0031] Regarding the constituent materials of metal members M11, M12, and M21, metal members M11, M12, and M21 may satisfy the following characteristics, and similarly, the constituent materials of the extended portion and the central part constituting metal members M11, M12, and M21 may satisfy the following characteristics. Metal members M11, M12, and M21 are capable of diffusing heat generated from semiconductor elements and can be used as heat conductors. At least one selected from the group consisting of metal members M11, M12, and M21 may be a porous metal member. The at least one metallic material selected from the group consisting of metal members M11, M12, and M21 may be a single metal, a metal alloy, or a metal compound. Examples of metal elements that make up at least one selected from the group consisting of metal member M11, metal member M12, and metal member M21 include copper, silver, gold, titanium, nickel, silicon, palladium, and aluminum. A sintered body containing a metal (metal element) may be used as at least one selected from the group consisting of metal member M11, metal member M12, and metal member M21. Examples of metal (metal element) in such a sintered body include copper and silver. The sintered body may be a porous metal member. At least one selected from the group consisting of metal member M11, metal member M12, and metal member M21 may contain at least one selected from the group consisting of copper and silver as a metal element, from the viewpoint of efficiently dissipating heat generated from the semiconductor device (metal member M11 may contain at least one selected from the group consisting of copper and silver, and metal member M21 may contain at least one selected from the group consisting of copper and silver). The porosity of at least one metal component selected from the group consisting of metal components M11, M12, and M21 may be greater than the porosity of metal component M31. The density of at least one metal component selected from the group consisting of metal components M11, M12, and M21 may be lower than the density of metal component M31.

[0032] In the power module according to the first embodiment, the length of the longest line segment L12 that extends within the second extension and connects the first semiconductor element (the position of the first semiconductor element) and each position on the outer periphery of the second extension by the shortest distance is longer than the length of the longest line segment L11 that extends within the first extension and connects the first semiconductor element (the position of the first semiconductor element) and each position on the outer periphery of the first extension by the shortest distance. In the power module according to the first embodiment, the length of line segment L12 is longer than the length of line segment L11 when viewed from a direction perpendicular to the semiconductor element mounting area. The "outer periphery of the first extension" and the "outer periphery of the second extension" are outer peripheries that do not share a boundary with the first semiconductor element. Line segment L12 extends in a straight line and extends continuously within the second extension (the portion in which the second extension exists). Line segment L11 extends in a straight line and continuously within the first extension (the portion where the first extension exists). If the extension (either the first or second extension) meanders, and a region A1 of the extension extending from the position of the first semiconductor element and a region A2 of the extension adjacent to region A1, separated by a region where no extension is located, exist on a straight line from the position of the first semiconductor element to the outside of the semiconductor element mounting area, then line segments L11 and L12 are line segments extending within the extension from the position of the first semiconductor element, and therefore the line segments extending within region A1 are the ones in question.

[0033] In the power module according to the first embodiment, if the metal member M12 has the extended portion A and extended portion B described above, from the viewpoint of efficiently dissipating heat generated from the semiconductor element, the length of the longest line segment extending within the extended portion B and connecting the second semiconductor element (position of the second semiconductor element) and each position on the outer circumference of the extended portion B by the shortest distance may be longer than the length of the longest line segment extending within the extended portion A and connecting the second semiconductor element (position of the second semiconductor element) and each position on the outer circumference of the extended portion A by the shortest distance.

[0034] In the power module according to the second embodiment, the length of line segment L21, which extends within the extended portion and connects the semiconductor element (position of the semiconductor element) to position P213 on the outer periphery of the extended portion, is longer than the length of line segment L22, which extends within the extended portion and connects the semiconductor element (position of the semiconductor element) to position P223 on the outer periphery of the extended portion, on the straight line La that connects the position P221 closest to the semiconductor element (position of the semiconductor element) to the semiconductor element (position of the semiconductor element) to position P222 on the outer periphery of the semiconductor element, is longer than the length of line segment L22, which extends within the extended portion and connects the semiconductor element (position of the semiconductor element) to position P223 on the outer periphery of the extended portion, on the straight line Lb that connects the position P221 closest to the semiconductor element (position of the semiconductor element) to the semiconductor element (position of the semiconductor element) to position P222 on the outer periphery of the semiconductor element. In the power module according to the second embodiment, the length of line segment L21 is longer than the length of line segment L22 when viewed from a direction perpendicular to the semiconductor element mounting region. Line segments L21 and L22 extend in a straight line and continuously within the extended portion (the area where the extended portion exists). "Position P211, which is the furthest from the semiconductor element among all the positions on the outer perimeter of the semiconductor element mounting area," is the position (on the outer perimeter of the semiconductor element mounting area) that has the longest distance when comparing the shortest distance between each position on the outer perimeter of the semiconductor element mounting area and the semiconductor element. "Position P221, which is the closest to the semiconductor element among all the positions on the outer perimeter of the semiconductor element mounting area," is the position (on the outer perimeter of the semiconductor element mounting area) that has the shortest distance when comparing the shortest distance between each position on the outer perimeter of the semiconductor element mounting area and the semiconductor element. If the extended portion meanders, and a straight line (straight line La or straight line Lb) connecting position P211 or position P221 and the semiconductor element by the shortest distance exists on the same line, then if there is a region B1 of the extended portion extending from the position of the semiconductor element and a region B2 of the extended portion adjacent to region B1, separated by a region where the extended portion is not located, then line segments L21 and L22 are line segments extending within the extended portion from the position of the semiconductor element, and therefore the line segments extending within region B1 are the ones in question.

[0035] The power module according to this embodiment may include components other than the base material, semiconductor elements, and metal members M11, M12, and M21.

[0036] The power module according to this embodiment may include a metal member (e.g., a metal layer) C1 which is disposed between a first semiconductor element and a metal member M11, which is a metal member that contacts the first semiconductor element and the metal member M11 between the first semiconductor element and the metal member M11, which is a metal member disposed between a second semiconductor element and a metal member M12, which is a metal member that contacts the second semiconductor element and the metal member M12 between the second semiconductor element and the metal member M12, which is a metal member disposed between a semiconductor element and a metal member M21, which is a metal member that contacts the semiconductor element and the metal member M21 between the semiconductor element and the metal member M21. The porosity of the metal member C1 may be smaller than the porosity of at least one selected from the group consisting of metal member M11, metal member M12, and metal member M21. The density of metal member C1 may be higher than the density of at least one selected from the group consisting of metal members M11, M12, and M21.

[0037] The power module according to this embodiment may include a metal member (e.g., a metal layer) C2 which is located on the opposite side of the first semiconductor element from the metal member M11, a metal member which is in contact with the first semiconductor element on the opposite side of the first semiconductor element from the metal member M11, a metal member which is located on the opposite side of the second semiconductor element from the metal member M12, a metal member which is in contact with the second semiconductor element on the opposite side of the second semiconductor element from the metal member M12, a metal member which is located on the opposite side of the semiconductor element from the metal member M21, and a metal member which is in contact with the semiconductor element on the opposite side of the semiconductor element from the metal member M21.

[0038] Examples of metallic elements that make up at least one selected from the group consisting of metal member C1 and metal member C2 include copper, silver, gold, titanium, nickel, silicon, palladium, aluminum, lead, and tin. At least one selected from the group consisting of metal member C1 and metal member C2 may be a plating layer. At least one selected from the group consisting of metal member C1 and metal member C2 may contain at least one selected from the group consisting of copper and silver, and may contain solder, from the viewpoint of easily obtaining good adhesion.

[0039] The power module according to the first embodiment may be provided with a heat dissipation member on the side opposite to the metal member M11 (on the side opposite to the first semiconductor element relative to the base material). The power module according to the second embodiment may be provided with a heat dissipation member on the side opposite to the metal member M21 (on the side opposite to the semiconductor element relative to the base material). Examples of heat dissipation members include heat sinks. In other words, the heat dissipation member may include a heat sink.

[0040] Figure 1 is a schematic plan view showing an example of a power module, illustrating an example of a power module according to the first embodiment. Figure 2 is a schematic cross-sectional view along the line II-II in Figure 1.

[0041] The power module 100 in Figures 1 and 2 comprises a base material 110, semiconductor elements 120a, 120b, and 120c (semiconductor elements 120a and 120b correspond to the first and second semiconductor elements described above), and metal members 130a, 130b, and 130c (metal members 130a and 130b correspond to the metal members M11 and M12 described above).

[0042] The base material 110 includes an insulating member 112, a metal member 114 (the aforementioned metal member M31) positioned on one side of the insulating member 112 (the side facing the semiconductor elements 120a, 120b, and 120c), and a metal member 116 (the aforementioned metal member M32: a member positioned on the opposite side of the insulating member 112 from the metal member 114). The base material 110 supports the semiconductor elements 120a, 120b, and 120c, and has a semiconductor element mounting region R on one side of the metal member 114 (the side facing the semiconductor elements 120a, 120b, and 120c) on which the semiconductor elements 120a, 120b, and 120c are mounted. The semiconductor element mounting region R on one side of the metal member 114 is a continuous, coplanar region. When viewed from a direction perpendicular to the semiconductor element mounting region R, the insulating member 112, metal member 114, metal member 116, and the semiconductor element mounting region R have a rectangular shape. When viewed from a direction perpendicular to the semiconductor element mounting region R, the area of ​​the insulating member 112 is larger than that of the metal member 114, metal member 116, semiconductor elements 120a, 120b, 120c, and metal members 130a, 130b, 130c.

[0043] The semiconductor elements 120a, 120b, and 120c are arranged in a line within the semiconductor element mounting region R of the substrate 110, with semiconductor element 120b positioned between semiconductor elements 120a and 120c. When viewed from a direction perpendicular to the semiconductor element mounting region R, the semiconductor elements 120a, 120b, and 120c have a rectangular shape, and the edges of the semiconductor elements 120a, 120b, and 120c that face the outer perimeter of the semiconductor element mounting region R extend parallel to the edges that demarcate the semiconductor element mounting region R. The semiconductor elements 120a, 120b, and 120c are adjacent to each other such that the edges of the semiconductor elements 120a, 120b, and 120c face each other parallel to one another.

[0044] The metal members 130a, 130b, and 130c have a rectangular shape when viewed from a direction perpendicular to the semiconductor element mounting area R. The metal members 130a, 130b, and 130c are positioned between the base material 110 and the semiconductor elements 120a, 120b, and 120c, and are in contact with the base material 110 (metal member 114 of the base material 110) and the semiconductor elements 120a, 120b, and 120c. The metal members 130a, 130b, and 130c are positioned in the semiconductor element mounting area R. When viewed from a direction perpendicular to the semiconductor element mounting area R, the semiconductor elements 120a, 120b, and 120c are located in the center of the metal members 130a, 130b, and 130c.

[0045] When viewed from a direction perpendicular to the semiconductor element mounting area R, the metal member 130a has a rectangular extension portion 132a (the first extension portion described above) located between semiconductor elements 120a and 120b, and an extension portion 134a (the second extension portion described above) extending outward from the position of semiconductor element 120a. The extension portions 132a and 134a are continuous, so that the entire periphery of semiconductor element 120a is surrounded by the extension portions 132a and 134a. When viewed from a direction perpendicular to the semiconductor element mounting area R, the metal member 130a has a central part (main section) 136a located at the position of semiconductor element 120a, in addition to the extension portions 132a and 134a.

[0046] When viewed from a direction perpendicular to the semiconductor element mounting area R, the metal member 130b has, as an extending portion extending from the position of the semiconductor element 120b, a rectangular extending portion 132b (extending portion A described above) located between semiconductor elements 120a and 120b, an extending portion 134b (extending portion B described above) extending from the position of semiconductor element 120b toward the outside of the semiconductor element mounting area R, and a rectangular extending portion 136b located between semiconductor elements 120b and 120c. The extension portions 132b, 134b, and 136b are continuous, so that the entire perimeter of the semiconductor element 120b is surrounded by the extension portions 132b, 134b, and 136b. When viewed from a direction perpendicular to the semiconductor element mounting region R, the metal member 130b has an extended portion 132b, 134b, 136b, as well as a central portion (main body) 138b located at the position of the semiconductor element 120b.

[0047] In the metal member 130a of the power module 100, the longest line segment L11, which extends within the extended portion 132a and connects the semiconductor element 120a and each position on the outer circumference of the extended portion 132a by the shortest distance, connects position P111 on one side constituting the semiconductor element 120a and position P112 on one side constituting the extended portion 132a (the line segment L11 extends in the direction of the arrangement of semiconductor elements 120a and 120b). The longest line segment L12, which extends within the extended portion 134a and connects the semiconductor element 120a and each position on the outer circumference of the extended portion 134a by the shortest distance, connects position P121 at the vertex of the semiconductor element 120a and position P122 at the vertex of the extended portion 134a. In the power module 100, the length of line segment L12 is longer than the length of line segment L11. In this case, while suppressing thermal interference from the semiconductor element 120b, the heat generated from the semiconductor element 120a can be dissipated to position P122, which is far from the semiconductor element 120a, thus enabling efficient heat dissipation from the semiconductor element 120a.

[0048] In the metal member 130b of the power module 100, the longest line segment L13, which extends within the extended portion 132b and connects the semiconductor element 120b and each position on the outer circumference of the extended portion 132b by the shortest distance, connects position P131 on one side constituting the semiconductor element 120b and position P132 on one side constituting the extended portion 132b (the line segment L13 extends in the direction of the arrangement of semiconductor elements 120a and 120b). The longest line segment L14, which extends within the extended portion 134b and connects the semiconductor element 120b and each position on the outer circumference of the extended portion 134b by the shortest distance, connects position P141 at the vertex of the semiconductor element 120b and position P142 at the vertex of the extended portion 134b. In the power module 100, the length of line segment L14 is longer than the length of line segment L13. In this case, while suppressing thermal interference from the semiconductor element 120a, the heat generated from the semiconductor element 120b can be dissipated to position P142, which is far from the semiconductor element 120b, thus enabling efficient heat dissipation from the semiconductor element 120b.

[0049] In the power module 100, the relative relationship between the semiconductor element 120c and the metal member 130c is the same as the relative relationship between the semiconductor element 120a and the metal member 130a. This allows heat generated from the semiconductor element 120c to be dissipated to a position away from the semiconductor element 120c while suppressing interference from heat generated from the semiconductor element 120b, thus enabling efficient heat dissipation from the semiconductor element 120c.

[0050] Figure 3 is a schematic plan view showing another example of a power module, illustrating another example of a power module according to the first embodiment.

[0051] The power modules 100A, 100B, and 100C in Figures 3(a) to 3(c) have the same configuration as the power module 100 in Figures 1 and 2, except that the shape of the extended portion of the metal members corresponding to the metal members 130a, 130b, and 130c is different. Power module 100A in Figure 3(a) is equipped with metal members 130d, 130e, and 130f, which correspond to the metal members 130a, 130b, and 130c of power module 100. Power module 100B in Figure 3(b) is equipped with metal members 130g, 130h, and 130i, which correspond to the metal members 130a, 130b, and 130c of power module 100. Power module 100C in Figure 3(c) is equipped with metal members 130j and 130k, which correspond to the metal members 130a and 130c of power module 100. Hereinafter, the arrangement direction of semiconductor elements 120a and 120b will simply be referred to as the "arrangement direction of semiconductor elements."

[0052] In the power module 100A shown in Figure 3(a), each of the metal members 130d, 130e, and 130f, when viewed from a direction perpendicular to the semiconductor element mounting region R, has an extended portion that extends from the position of the semiconductor elements 120a, 120b, and 120c, and includes a rectangular annular first portion that surrounds the entire perimeter of each of the semiconductor elements 120a, 120b, and 120c, and six rectangular second portions that extend from the first portion in a direction perpendicular to the arrangement direction of the semiconductor elements. The second portion includes a pair of portions that extend from the first portion in opposite directions, straddling the center of the semiconductor elements 120a, 120b, and 120c, and two pairs of portions that extend from the first portion in opposite directions, straddling the first portion at both ends in the arrangement direction of the semiconductor elements within the first portion. The second portion extends from the first portion without reaching the outer perimeter of the semiconductor element mounting region R. In the metal member 130d, a portion of the first part constitutes a rectangular first extension located between semiconductor elements 120a and 120b, and the remainder of the first part and the second part constitute a second extension extending from the position of semiconductor element 120a toward the outside of the semiconductor element mounting region R.

[0053] In the metal member 130d of the power module 100A, the longest line segment L11, which extends within the first extension and connects the semiconductor element 120a and each position on the outer periphery of the first extension by the shortest distance, connects position P111 on one side constituting the semiconductor element 120a and position P112 on one side constituting the first extension (the line segment L11 extends in the direction of the arrangement of the semiconductor elements). The longest line segment L12, which extends within the second extension and connects the semiconductor element 120a and each position on the outer periphery of the second extension by the shortest distance, connects position P121 on the vertex of the semiconductor element 120a and position P122 on the vertex of the second part of the metal member 130d that is closest to the vertex on the outer periphery of the semiconductor element mounting region R. In the power module 100A, the length of line segment L12 is longer than the length of line segment L11. In this case, while suppressing thermal interference from semiconductor element 120b, the heat generated from semiconductor element 120a can be dissipated to position P122, which is away from semiconductor element 120a, thus enabling efficient heat dissipation from semiconductor element 120a. Similar to metal members 130b and 130c in power module 100 in Figures 1 and 2, metal members 130e and 130f of power module 100A enable efficient heat dissipation from semiconductor elements 120b and 120c.

[0054] In the power module 100B shown in Figure 3(b), each of the metal members 130g, 130h, and 130i extends from the positions of the semiconductor elements 120a, 120b, and 120c as an extended portion when viewed from a direction perpendicular to the semiconductor element mounting region R. This extended portion surrounds the entire periphery of each of the semiconductor elements 120a, 120b, and 120c and has an elongated elliptical outer circumference perpendicular to the semiconductor element arrangement direction. The extended portions of the metal members 130g, 130h, and 130i are not continuous with each other and extend in the direction of the semiconductor element arrangement (the minor axis direction of the elliptical shape of the extended portion). They extend to a position between the semiconductor elements 120a, 120b, and 120c and the outer circumference of the semiconductor element mounting region R in a direction perpendicular to the semiconductor element arrangement direction (the major axis direction of the elliptical shape of the extended portion). In the metal member 130g, a portion of the extended portion constitutes a first extended portion located between semiconductor elements 120a and 120b, and the remaining portion of the extended portion constitutes a second extended portion extending from the position of semiconductor element 120a toward the outside of the semiconductor element mounting area R.

[0055] In the metal member 130g of the power module 100B, the longest line segment L11, which extends within the first extension and connects the semiconductor element 120a and each position on the outer circumference of the first extension by the shortest distance, connects position P111 on one side constituting the semiconductor element 120a and position P112 on the minor axis of the elliptical shape of the extension on the outer circumference of the first extension (line segment L11 extends in the direction of the arrangement of the semiconductor elements). The longest line segment L12, which extends within the second extension and connects the semiconductor element 120a and each position on the outer circumference of the second extension by the shortest distance, connects position P121 on one side constituting the semiconductor element 120a and position P122 on the major axis of the elliptical shape of the extension on the outer circumference of the second extension (line segment L12 extends in a direction perpendicular to the direction of the arrangement of the semiconductor elements). In power module 100B, the length of line segment L12 is longer than the length of line segment L11. In this case, while suppressing thermal interference from semiconductor element 120b, the heat generated from semiconductor element 120a can be dissipated to position P122, which is far from semiconductor element 120a, thus efficiently dissipating the heat generated from semiconductor element 120a. Similar to metal members 130b and 130c in power module 100 in Figures 1 and 2, metal members 130h and 130i in power module 100B allow for efficient dissipation of heat generated from semiconductor elements 120b and 120c.

[0056] In the power module 100C shown in Figure 3(c), the metal member 130j, when viewed from a direction perpendicular to the semiconductor element mounting area R, has a rectangular first extension portion that extends from the position of semiconductor element 120a toward the position of semiconductor element 120b in the direction of the semiconductor element arrangement, and a rectangular second extension portion that extends from the position of semiconductor element 120a toward the outer periphery of the semiconductor element mounting area R in the direction of the semiconductor element arrangement. The first extension portion of the metal member 130j extends from the position of semiconductor element 120a between semiconductor element 120a and semiconductor element 120b without reaching the position of semiconductor element 120b. The metal member 130k in the power module 100C has, when viewed from a direction perpendicular to the semiconductor element mounting area R, an extended portion that extends from the position of the semiconductor element 120c, and has a rectangular first extended portion that extends from the position of the semiconductor element 120c toward the position of the semiconductor element 120b in the direction of the semiconductor element arrangement, and a rectangular second extended portion that extends from the position of the semiconductor element 120c toward the outer periphery of the semiconductor element mounting area R in the direction of the semiconductor element arrangement. The first extended portion of the metal member 130k extends from the position of the semiconductor element 120a between the semiconductor element 120b and the semiconductor element 120c without reaching the position of the semiconductor element 120b. The power module 100C has a metal member (not shown) between the base material 110 and the semiconductor element 120b without an extended portion that extends from the position of the semiconductor element 120b when viewed from a direction perpendicular to the semiconductor element mounting area R.

[0057] In the metal member 130j of the power module 100C, the longest line segment L11, which extends within the first extension and connects the semiconductor element 120a and each position on the outer periphery of the first extension by the shortest distance, connects position P111 on one side constituting the semiconductor element 120a and position P112 on one side constituting the first extension (line segment L11 extends in the direction of the arrangement of the semiconductor elements). The longest line segment L12, which extends within the second extension and connects the semiconductor element 120a and each position on the outer periphery of the second extension by the shortest distance, connects position P121 on one side constituting the semiconductor element 120a and position P122 on the outer periphery of the semiconductor element mounting area R (line segment L12 extends in the direction of the arrangement of the semiconductor elements). In the power module 100C, the length of line segment L12 is longer than the length of line segment L11. In this case, while suppressing thermal interference from the semiconductor element 120b, the heat generated from the semiconductor element 120a can be dissipated to a position P122 away from the semiconductor element 120a, thus efficiently dissipating the heat generated from the semiconductor element 120a. Similar to the metal member 130c in the power module 100 in Figures 1 and 2, the metal member 130k of the power module 100C allows for efficient dissipation of heat generated from the semiconductor element 120c.

[0058] Figure 4 is a schematic plan view showing another example of a power module, illustrating an example of a power module according to the second embodiment. Figure 5 is a schematic cross-sectional view along the VV line in Figure 4.

[0059] The power module 200 in Figures 4 and 5 comprises a base material 210, a semiconductor element 220, and a metal member 230 (the aforementioned metal member M21).

[0060] The base material 210 includes an insulating member 212, a metal member 214 (the aforementioned metal member M31) disposed on one side of the insulating member 212 (the side facing the semiconductor element 220), and a metal member 216 (the aforementioned metal member M32: a member disposed on the opposite side of the insulating member 212 from the metal member 214) disposed on the other side of the insulating member 212 (the side opposite to the semiconductor element 220). The base material 210 supports the semiconductor element 220 and has a semiconductor element mounting region R on one side of the metal member 214 (the side facing the semiconductor element 220) on which the semiconductor element 220 is mounted. The semiconductor element mounting region R on one side of the metal member 214 is a continuous, coplanar region. When viewed from a direction perpendicular to the semiconductor element mounting region R, the insulating member 212, metal member 214, metal member 216, and semiconductor element mounting region R have a rectangular shape. When viewed from a direction perpendicular to the semiconductor element mounting region R, the area of ​​the insulating member 212 is larger than the area of ​​the metal member 214, the metal member 216, the semiconductor element 220, and the metal member 230.

[0061] The power module 200 includes a semiconductor element 220 as a single semiconductor element. The semiconductor element 220 is positioned in the center of the semiconductor element mounting region R of the substrate 210. When viewed from a direction perpendicular to the semiconductor element mounting region R, the semiconductor element 220 has a rectangular shape, and the edges constituting the semiconductor element 220 that face the outer periphery of the semiconductor element mounting region R extend parallel to the edges that demarcate the semiconductor element mounting region R.

[0062] The metal member 230 has a rectangular shape when viewed from a direction perpendicular to the semiconductor element mounting area R. The metal member 230 is positioned between the base material 210 and the semiconductor element 220, and is in contact with the base material 210 (metal member 214 of the base material 210) and the semiconductor element 220. The metal member 230 is positioned in the semiconductor element mounting area R. When viewed from a direction perpendicular to the semiconductor element mounting area R, the semiconductor element 220 is located in the center of the metal member 230.

[0063] The metal member 230, when viewed from a direction perpendicular to the semiconductor element mounting region R, has an extended portion 232 that extends from the position of the semiconductor element 220, and a central portion (main body) 234 located at the position of the semiconductor element 220. The continuous extension portion 232 surrounds the entire perimeter of the semiconductor element 220.

[0064] In the power module 200, position P211 is the position furthest from the semiconductor element 220 among all the positions on the outer perimeter of the semiconductor element mounting region R. Line La is the straight line that connects position P211 and the semiconductor element 220 (position P212 of the semiconductor element 220) by the shortest distance. Line segment L21 is a line segment that extends within the extension portion 232 on line La and connects the semiconductor element 220 (position P212 of the semiconductor element 220) and position P213 on the outer perimeter of the extension portion 232. Position P221 is the position closest to the semiconductor element 220 among all the positions on the outer perimeter of the semiconductor element mounting region R. Line Lb is the straight line that connects position P221 and the semiconductor element 220 (position P222 of the semiconductor element 220) by the shortest distance. The line segment L22 extends along the straight line Lb within the extension portion 232 and connects the semiconductor element 220 (position P222 of the semiconductor element 220) to position P223 on the outer circumference of the extension portion 232. In the power module 200, the length of line segment L21 is longer than the length of line segment L22. In this case, in order to dissipate the heat generated from the semiconductor element 220, the region between the semiconductor element 220 and the position P211, which is the position furthest from the semiconductor element 220 among the positions on the outer circumference of the semiconductor element mounting region R (the region where the semiconductor element is not mounted) can be utilized. As a result, the power module 200 can efficiently dissipate the heat generated from the semiconductor element 220.

[0065] Figure 6 is a schematic plan view showing another example of a power module, illustrating another example of a power module according to the second embodiment.

[0066] The power modules 200A and 200B in Figures 6(a) and 6(b) have the same configuration as the power module 200 in Figures 4 and 5, except that the shape of the extended portion of the metal member corresponding to the metal member 230 is different. Power module 200A in Figure 6(a) includes a metal member 230a corresponding to the metal member 230 of power module 200. Power module 200B in Figure 6(b) includes a metal member 230b corresponding to the metal member 230 of power module 200.

[0067] The metal member 230a in the power module 200A shown in Figure 6(a) has, when viewed from a direction perpendicular to the semiconductor element mounting area R, an extended portion that extends from the position of the semiconductor element 220, and a first rectangular annular portion that surrounds the entire periphery of the semiconductor element 220, and six rectangular second portions that extend from the first portion in the direction of the extension of a pair of opposing sides among the sides that constitute the rectangular semiconductor element 220. The second portion includes a pair of portions that extend from the first portion in opposite directions across the center of the semiconductor element 220, and two pairs of portions that extend from both ends of the first portion in opposite directions across the region between the semiconductor element 220 and the outer periphery of the semiconductor element mounting area R. The second portion extends from the first portion without reaching the outer periphery of the semiconductor element mounting area R.

[0068] In the power module 200B shown in Figure 6(b), the metal member 230b, when viewed from a direction perpendicular to the semiconductor element mounting region R, has a first rectangular annular portion that surrounds the entire periphery of the semiconductor element 220, and four second portions that extend from the first portion in each of the diagonal directions of the rectangular semiconductor element 220. The second portions extend from the first portion without reaching the outer periphery of the semiconductor element mounting region R.

[0069] In power modules 200A and 200B, position P211 is the position furthest from the semiconductor element 220 among all positions on the outer perimeter of the semiconductor element mounting region R. Line La is the straight line connecting position P211 and the semiconductor element 220 (position P212 of the semiconductor element 220) by the shortest distance. Line segment L21 is a line segment that extends within the extended portion of the metal members 230a and 230b along line La and connects the semiconductor element 220 (position P212 of the semiconductor element 220) and position P213 on the outer perimeter of the extended portion. Position P221 is the position closest to the semiconductor element 220 among all positions on the outer perimeter of the semiconductor element mounting region R. Line Lb is the straight line connecting position P221 and the semiconductor element 220 (position P222 of the semiconductor element 220) by the shortest distance. The line segment L22 extends along the straight line Lb through the extended portions of the metal members 230a and 230b, connecting the semiconductor element 220 (position P222 of the semiconductor element 220) with position P223 on the outer periphery of the extended portion. In power modules 200A and 200B, the length of line segment L21 is longer than the length of line segment L22. In this case, to dissipate the heat generated from the semiconductor element 220, the region between the semiconductor element 220 and the position P211, which is the furthest point from the semiconductor element 220 among the positions on the outer periphery of the semiconductor element mounting region R (the region where the semiconductor element is not mounted) can be utilized. As a result, power modules 200A and 200B can efficiently dissipate the heat generated from the semiconductor element 220.

[0070] The method for manufacturing a power module according to this embodiment (the method for manufacturing a power module according to the first embodiment and the method for manufacturing a power module according to the second embodiment; the same applies hereinafter) is a method for manufacturing a power module comprising a substrate having a semiconductor element mounting area, a semiconductor element mounted on the semiconductor element mounting area, and a metal member disposed between the substrate and the semiconductor element. The method for manufacturing a power module according to this embodiment includes a forming step of forming a metal member in the semiconductor element mounting area, and in the forming step, based on the position of the semiconductor element (the position where the semiconductor element is to be placed), at least one of the direction and length of the metal member extending from the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting area is adjusted.

[0071] In the power module manufacturing method according to this embodiment, by adjusting at least one of the direction and length of the metal member extending from the semiconductor element's position based on the position of the semiconductor element (the relative position of multiple semiconductor elements, the relative position of the semiconductor element with respect to the outer periphery of the semiconductor element mounting area, etc.), the metal member can be formed in a manner that efficiently dissipates heat generated from the semiconductor element, thereby enabling the creation of a power module capable of efficiently dissipating heat generated from the semiconductor element. In other words, according to the power module manufacturing method according to this embodiment, the configuration of the metal member (the direction and length of the metal member extending from the semiconductor element's position) can be designed according to the position of the semiconductor element. The power module according to this embodiment can be obtained according to the power module manufacturing method according to this embodiment.

[0072] In the manufacturing method of the power module according to the first embodiment, a plurality of semiconductor elements are mounted in the semiconductor element mounting area, and in the formation process, based on the relative positions of the plurality of semiconductor elements (the relative relationship of the positions where the plurality of semiconductor elements are to be placed), at least one of the direction and length of the metal member extending from the position of the semiconductor elements when viewed from a direction perpendicular to the semiconductor element mounting area is adjusted. In this case, the metal member can be adjusted in the formation process so that the metal member of the power module according to the first embodiment is obtained.

[0073] In the manufacturing method of the power module according to the second embodiment, in the forming step, at least one of the direction and length of the metal member extending from the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting area is adjusted based on the relative position between the semiconductor element and the outer periphery of the semiconductor element mounting area (the relative position between the position where the semiconductor element is to be placed and the outer periphery of the semiconductor element mounting area). In this case, the metal member can be adjusted in the forming step so that the metal member of the power module according to the second embodiment is obtained. In the manufacturing method of the power module according to the second embodiment, a single semiconductor element may be mounted in the semiconductor element mounting area, or multiple semiconductor elements may be mounted in the semiconductor element mounting area.

[0074] The manufacturing method for the power module according to this embodiment may include a step, prior to the forming step, of determining at least one of the direction and length of the metal member extending from the position of the semiconductor element (the position where the semiconductor element is to be placed), based on the position of the semiconductor element.

[0075] The manufacturing method of the power module according to this embodiment may include a step of arranging semiconductor elements on a metal member after the forming step. [Explanation of Symbols]

[0076] 100, 100A, 100B, 100C, 200, 200A, 200B… Power modules, 110, 210… Base materials, 112, 212… Insulating materials, 114, 116, 130a, 130b, 130c, 130d, 130e, 130f, 130g, 130h, 130i, 130j, 130k, 214, 216, 230, 230a, 230b… Metal materials, 120a, 120b, 120c, 220… Semi-metallic Conductor element, 132a, 132b, 134a, 134b, 136b, 232...extension part, 136a, 138b, 234...center part, L11,L12,L13,L14,L21,L22...line segment, La,Lb …straight line, P111,P112,P121,P122,P131,P132,P141,P142,P211,P212,P213,P221,P222,P223…position, R…semiconductor element mounting area.

Claims

1. The invention comprises a substrate having a semiconductor element mounting region, a first semiconductor element and a second semiconductor element mounted on the semiconductor element mounting region, and a metal member disposed between the substrate and the first semiconductor element. When viewed from a direction perpendicular to the semiconductor element mounting area, the metal member has, as an extension portion extending from the position of the first semiconductor element, a first extension portion located between the first semiconductor element and the second semiconductor element, and a second extension portion extending from the position of the first semiconductor element toward the outside of the semiconductor element mounting area. A power module in which the length of the longest line segment extending within the second extension and connecting the first semiconductor element and each position on the outer circumference of the second extension by the shortest distance is longer than the length of the longest line segment extending within the first extension and connecting the first semiconductor element and each position on the outer circumference of the first extension by the shortest distance.

2. The invention comprises a substrate having a semiconductor element mounting region, a semiconductor element mounted in the semiconductor element mounting region, and a metal member disposed between the substrate and the semiconductor element. When viewed from a direction perpendicular to the semiconductor element mounting region, the metal member has an extended portion that extends from the position of the semiconductor element. A power module in which the length of a line segment extending within the extended portion and connecting the semiconductor element and a position on the outer perimeter of the extended portion, on a straight line connecting the position furthest from the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area with the semiconductor element by the shortest distance, is longer than the length of a line segment extending within the extended portion and connecting the semiconductor element and a position on the outer perimeter of the extended portion, on a straight line connecting the position closest to the semiconductor element among the positions on the outer perimeter of the semiconductor element mounting area with the semiconductor element by the shortest distance,

3. The power module according to claim 2, wherein a single semiconductor element is mounted in the semiconductor element mounting region.

4. The power module according to claim 2, wherein a plurality of the semiconductor elements are mounted in the semiconductor element mounting region.

5. The power module according to any one of claims 1 to 4, wherein the metal member contains at least one selected from the group consisting of copper and silver.

6. A method for manufacturing a power module comprising a substrate having a semiconductor element mounting region, a semiconductor element mounted on the semiconductor element mounting region, and a metal member disposed between the substrate and the semiconductor element, The process includes forming the metal member in the semiconductor element mounting region, A method for manufacturing a power module, comprising the forming step of adjusting, based on the position of the semiconductor element, at least one of the direction and length of the metal member extending from the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting area.

7. Multiple semiconductor elements are mounted in the aforementioned semiconductor element mounting region. The method for manufacturing a power module according to claim 6, wherein in the forming step, at least one of the direction and length of the metal member extending from the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting area is adjusted based on the relative positions of the plurality of semiconductor elements.

8. The method for manufacturing a power module according to claim 6, wherein in the forming step, at least one of the direction and length of the metal member extending from the position of the semiconductor element when viewed from a direction perpendicular to the semiconductor element mounting area is adjusted based on the relative position between the semiconductor element and the outer periphery of the semiconductor element mounting area.

9. The method for manufacturing a power module according to any one of claims 6 to 8, wherein the metal member contains at least one selected from the group consisting of copper and silver.

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