Method and apparatus for transferring this element

Abstract

This invention provides an element transfer method that enables the separation of an element from an adhesive layer, even when the element has a relatively small thickness and low weight. [Solution] This semiconductor chip transfer method (device transfer method) comprises a placement step of stacking and arranging an adhesive layer 2, a resist layer 3, and a semiconductor chip 1 on a transfer substrate 10 so that they adhere to each other in that order, and a transfer step of irradiating the transfer substrate 10 with laser light L from the side opposite to the side on which the semiconductor chip 1 is placed toward the transfer substrate 10, thereby deforming the adhesive layer 2 and transferring the semiconductor chip 1 to the substrate to be transferred 20. In the transfer step, the resist layer 3 is destroyed due to the deformation of the adhesive layer 2, thereby separating the adhesive layer 2 and the semiconductor chip 1.

Description

Technical Field

[0005]

[0001] The present invention relates to an element transfer method and an element transfer apparatus, and more particularly to an element transfer method and an element transfer apparatus for transferring an element by irradiating a laser beam.

Background Art

[0002] Conventionally, an element transfer method for transferring an element by irradiating a laser beam has been known (see, for example, Patent Document 1).

[0003] Patent Document 1 discloses a laser transfer method for transferring an article attached to a substrate to another substrate. In Patent Document 1, a release layer including a blistering layer that is deformed by irradiating a laser beam and an adhesive layer laminated on the blistering layer is provided between the substrate and the article, and the article is held by the adhesive layer. Then, in Patent Document 1, a laser beam is irradiated from the upper surface side of the substrate toward the blistering layer laminated on the adhesive layer, and the blistering layer is deformed, so that the adhesive layer is deformed convexly downward. As a result, the article is separated from the release layer and transferred to another substrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In conventional element transfer methods, such as those described in Patent Document 1 above, when the thickness of the article (element) is relatively small, the relatively small weight of the article (element) can cause the deformed portion of the release layer (adhesive layer) during transfer to remain attached to the element without separating, resulting in the element not being transferred to another substrate. For this reason, there is a need for an element transfer method and apparatus that can separate the element from the adhesive layer even when the thickness of the element is relatively small.

[0006] This invention was made to solve the above-mentioned problems, and one of its objectives is to provide an element transfer method and an element transfer apparatus that can separate an element from an adhesive layer even when the element has a relatively small thickness and low self-weight. [Means for solving the problem]

[0007] To achieve the above objective, the first aspect of the present invention provides an element transfer method comprising: an arrangement step of stacking and arranging an adhesive layer, a destructive layer, and an element on a first substrate so that they adhere to each other in that order; and a transfer step of irradiating the first substrate with laser light from the side opposite to the surface on which the element is arranged toward the first substrate to deform the adhesive layer and transfer the element to the second substrate, wherein in the transfer step, the destructive layer is destroyed due to the deformation of the adhesive layer, thereby separating the adhesive layer and the element.

[0008] In this first phase of the element transfer method, as described above, the destructive layer is destroyed during the transfer process due to deformation of the adhesive layer, thereby separating the adhesive layer from the element. As a result, the area of ​​the adhesion region between the destructive layer and the element during transfer is reduced due to the destruction of the destructive layer. Therefore, the adhesion force between the destructive layer attached to the adhesive layer during transfer and the element can be reduced, providing an element transfer method that can separate the element from the adhesive layer even when the element has a relatively small thickness and low self-weight.

[0009] In the element transfer method according to the first aspect described above, preferably, the fracture layer has a ductility less than that of the adhesive layer. With this configuration, during transfer, the fracture layer cannot follow the deformation of the adhesive layer and is fractured, so the fracture layer can be easily fractured.

[0010] In the device transfer method according to the first aspect described above, preferably, the breakdown layer includes a resist layer. With this configuration, the resist layer formed as a protective film (mask) when processing (patterning) the substrate in the device manufacturing process can also be used as the breakdown layer, thus eliminating the need for the step of forming a new breakdown layer. This simplifies the device transfer process.

[0011] An element transfer apparatus according to a second aspect of this invention comprises a first substrate holding unit that holds a first substrate on which an adhesive layer, a destructive layer, and an element are stacked and arranged so as to adhere to each other in that order, and a laser beam irradiation unit that irradiates the first substrate with laser light from the side of the first substrate opposite to the surface on which the element is placed, thereby deforming the adhesive layer and transferring the element to the second substrate, wherein the laser beam irradiation unit is configured to separate the adhesive layer and the element by irradiating with laser light in such a way that the destructive layer is destroyed due to the deformation of the adhesive layer.

[0012] In this second phase of the element transfer apparatus, as described above, the laser irradiation section is configured to irradiate the element with laser light in such a way that the destructive layer is destroyed due to deformation of the adhesive layer, thereby separating the adhesive layer from the element. As a result, the area of ​​the adhesion region between the destructive layer and the element during transfer is reduced. Therefore, the adhesion force between the destructive layer attached to the adhesive layer and the element during transfer can be reduced, making it possible to provide an element transfer apparatus that can separate the element from the adhesive layer even when the element has a relatively small thickness and low self-weight. [Effects of the Invention]

[0013] As described above, the element transfer method and element transfer apparatus of the present invention can separate the element from the adhesive layer even when the element has a relatively small thickness and low self-weight. [Brief explanation of the drawing]

[0014] [Figure 1] This is a schematic diagram showing the overall configuration of a semiconductor chip transfer apparatus according to one embodiment of the present invention. [Figure 2] This is a plan view showing a semiconductor chip according to one embodiment of the present invention placed on a transfer substrate. [Figure 3] This is a cross-sectional view of a semiconductor chip transfer apparatus during transfer according to one embodiment of the present invention. [Figure 4] This is a diagram illustrating the spot region of a laser beam according to one embodiment of the present invention. [Figure 5] This is a flowchart illustrating the process of a semiconductor chip transfer method according to one embodiment of the present invention. [Figure 6] This is a schematic diagram illustrating the process of a semiconductor chip transfer method according to one embodiment of the present invention. [Figure 7] This figure shows the state of the semiconductor chip during transfer according to one embodiment of the present invention. [Modes for carrying out the invention]

[0015] Hereinafter, an embodiment of the present invention will be described based on the drawings.

[0016] (Configuration of semiconductor chip transfer equipment) The configuration of the semiconductor chip transfer apparatus 100 according to this embodiment will be described with reference to Figures 1 to 4. Note that the semiconductor chip transfer apparatus 100 is an example of the "device transfer apparatus" in the claims.

[0017] As shown in FIG. 1, the semiconductor chip transfer device 100 is configured to transfer the semiconductor chip 1 disposed on the transfer substrate 10 to the substrate to be transferred 20 by the laser lift-off method. Note that the transfer substrate 10 is an example of the "first substrate" in the claims. Also, the substrate to be transferred 20 is an example of the "second substrate" in the claims.

[0018] The semiconductor chip transfer device 100 includes a transfer substrate holding unit 30, a substrate to be transferred holding unit 40, a moving mechanism 50, a control unit 60, and a laser light irradiation unit 70. In the drawings, the left-right direction (one direction in the horizontal plane) of the semiconductor chip transfer device 100 is defined as the X direction. Also, the up-down direction (vertical direction) of the semiconductor chip transfer device 100 is defined as the Z direction. Also, the upward direction is defined as the Z1 direction, and the downward direction is defined as the Z2 direction. Also, the direction orthogonal to the X direction and the Z direction of the semiconductor chip transfer device 100 (the other direction in the horizontal plane) is defined as the Y direction. Note that the transfer substrate holding unit 30 is an example of the "first substrate holding unit" in the claims.

[0019] [[ID=D7]] As shown in FIG. 2, a plurality of semiconductor chips 1 are arranged in a matrix (row and column) at a predetermined interval on the transfer substrate 10. The transfer substrate 10 has, for example, a circular shape. As the semiconductor chip 1, for example, a thin element having a rectangular shape with a side length of several tens of μm to several mm and a thickness of 200 nm to 800 nm, such as an InP chip, is used.

[0020] As shown in FIG. 3, the semiconductor chip 1 is disposed on the transfer substrate 10 via an adhesive layer 2 and a resist layer 3. The transfer substrate 10 is formed of a material that transmits the laser light L, such as a SiO2 (silicon dioxide) substrate or a sapphire substrate. Note that the resist layer 3 is an example of the "destruction layer" in the claims. The semiconductor chip 1 is an example of the "element" in the claims. The adhesive layer 2 is also called a transfer material and a release material.

[0021] The adhesive layer 2 is located on the surface 10a of the transfer substrate 10 opposite to the side (Z2 side) to which the laser beam L is irradiated. The adhesive layer 2 is made of a material that decomposes and generates gas components when irradiated with laser beam L from the laser beam irradiation section 70. As a result of generating gas components, the adhesive layer 2 deforms into a convex shape (see Figure 7) that protrudes on the side (Z2 side) opposite to the side to which the laser beam L is irradiated. The adhesive layer 2 is made of, for example, polyimide or silicon.

[0022] The resist layer 3 is located on the side 2a of the adhesive layer 2 opposite to the transfer substrate 10 (Z2 side). The resist layer 3 is formed as a protective film (mask) when processing (patterning) the substrate in the manufacturing process of the semiconductor chip 1. In this embodiment, the resist layer 3 has less ductility than the adhesive layer 2. Furthermore, the resist layer 3 has the property of being destroyed when deformed beyond a predetermined degree. For example, "MICROPOSIT S1813 PHOTO RESIST" is used as the resist layer 3. The semiconductor chip 1 is located on the side 3a of the resist layer 3 opposite to the adhesive layer 2 (Z2 side).

[0023] As shown in Figures 1 and 3, the transfer substrate holder 30 holds the transfer substrate 10 on which the semiconductor chip 1 is placed via the adhesive layer 2 and the resist layer 3. The transfer substrate holder 30 holds the transfer substrate 10 with the semiconductor chip 1 placed on it, with the side on which the semiconductor chip 1 is placed facing downwards (Z2 direction). The transfer substrate holder 30 has an opening 31. Laser light L is irradiated onto the transfer substrate 10 held by the transfer substrate holder 30 from the laser light irradiation unit 70 through the opening 31. The transfer substrate holder 30 is configured to be able to move relative to the transfer substrate holder 40 in at least the X and Y directions by a moving mechanism 50.

[0024] The transfer substrate 20 is a substrate onto which a large number of semiconductor chips 1, which are placed on a transfer substrate 10, are transferred, for example, in order to manufacture a semiconductor product. The transfer substrate 20 has an adhesive layer 21 for adhering the transferred semiconductor chips 1. The adhesive layer 21 is also called a catch layer. The transfer substrate 20 may also have wiring formed on it that can be electrically connected to the transferred semiconductor chips 1. The transfer substrate 20 has, for example, a rectangular shape.

[0025] The substrate to be transferred, holding portion 40, holds the substrate to be transferred, the substrate 20 onto which the semiconductor chip 1 placed on the transfer substrate 10 is transferred, from below (Z2 side). The substrate to be transferred, holding portion 40, is configured to be movable relative to the transfer substrate holding portion 30 in at least the X and Y directions by the moving mechanism 50. By moving the transfer substrate holding portion 30 and / or the transfer substrate holding portion 40 by the moving mechanism 50, the relative position of the semiconductor chip 1 placed on the transfer substrate 10 with respect to the transfer substrate 20 can be adjusted.

[0026] As shown in Figure 1, the control unit 60 is composed of a processor such as a CPU (Central Processing Unit) and performs various controls by executing a program (software). The control unit 60 arbitrarily selects a semiconductor chip 1 within the transfer area and controls the transfer of the selected semiconductor chip 1 to the transfer substrate 20 by irradiating the laser beam irradiation unit 70 with laser light L. The control unit 60 controls the operation of the moving mechanism 50 and the operation of the laser beam irradiation unit 70.

[0027] The laser light irradiation unit 70 is configured to irradiate the transfer substrate 10 with laser light L. The laser light irradiation unit 70 includes a laser light source 71, a galvanometer mirror 72, an fθ lens 73, and a slit 74. The laser light source 71 is a light source that emits laser light L. The galvanometer mirror 72 is composed of two mirrors, each of which can rotate independently around two intersecting axes as its axis of rotation, and reflects the laser light L at any angle. The fθ lens 73 focuses the laser light L reflected by the galvanometer mirror 72 onto the transfer area of ​​the transfer substrate 10.

[0028] Furthermore, a slit 74 is provided between the laser light source 71 and the galvanometer mirror 72. By adjusting the size of the opening of the slit 74, the area of ​​the spot region LS (see Figure 4) of the laser light L is adjusted. The spot region LS refers to the irradiation area on the adhesive layer 2 of the laser light L that has passed through the transfer substrate 10 and irradiated onto the adhesive layer 2.

[0029] The laser beam irradiation unit 70 irradiates the surface 10b (see Figure 3) of the transfer substrate 10 held in the transfer substrate holding unit 30 with laser beam L via the galvanometer mirror 72 and the fθ lens 73, on the surface 10a on which the semiconductor chip 1 is placed. The laser beam L is irradiated towards the selected semiconductor chip 1 by the galvanometer mirror 72 and the fθ lens 73.

[0030] As shown in Figure 4, the laser beam irradiation unit 70 intermittently irradiates the semiconductor chip 1 with laser beam L. The control unit 60 controls the irradiation position of the laser beam L so that the spot areas LS of the laser beam L do not overlap with each other. The area of ​​the spot area LS of the laser beam L is smaller than the total area of ​​the semiconductor chip 1. The semiconductor chip 1 has, for example, a rectangular shape, and the length of one side of the semiconductor chip 1 is between several tens of micrometers and several millimeters. The spot area also has, for example, a rectangular shape, and the length of one side of the spot area is between several micrometers and several tens of micrometers.

[0031] (Semiconductor chip transfer method) Next, the semiconductor chip transfer method of this embodiment will be described with reference to Figures 5 and 6.

[0032] As shown in the placement steps in Figures 6(a) and 6(b), the semiconductor chip 1 is placed on the transfer substrate 10 by an apparatus (not shown) or by a user. In the placement step, as shown in Figure 6(a), the manufacturing substrate 80, on which the semiconductor chip 1 and the resist layer 3 are arranged in that order, is pressed against the transfer substrate 10 on which the adhesive layer 2 is placed, so that the resist layer 3 and the adhesive layer 2 are in contact. Then, as shown in Figure 6(b), the semiconductor chip 1 is placed on the transfer substrate 10 by removing only the manufacturing substrate 80. Here, the manufacturing substrate 80 is a substrate for manufacturing the semiconductor chip 1, and the semiconductor chip 1 is manufactured on the manufacturing substrate 80. The manufacturing substrate 80 and the semiconductor chip 1 are fixed together by the tether portion 3b of the resist layer 3. A space 4 is also formed between the manufacturing substrate 80 and the semiconductor chip 1. The space 4 is formed by chemically removing a removal layer (not shown) that was formed in the manufacturing process of the semiconductor chip 1. Then, as shown in Figure 6(b), when the manufacturing substrate 80 is removed, the tether portion 3b of the resist layer 3 breaks, separating the manufacturing substrate 80 from the semiconductor chip 1 and the resist layer 3, thus completing the placement process. In other words, in this embodiment, during the placement process, the adhesive layer 2, the resist layer 3, and the semiconductor chip 1 are stacked and placed on the transfer substrate 10 so that they adhere to each other in this order. The manufacturing substrate 80 is formed of, for example, InP.

[0033] After the step of placing the semiconductor chip 1 on the transfer substrate 10, the semiconductor chip transfer method is performed as shown in Figure 5. As shown in Figures 3, 5, and 6, in step S1, the control unit 60 (see Figure 1) irradiates the transfer substrate 10 on which the semiconductor chip 1 is placed, via the adhesive layer 2 and the resist layer 3, with laser light L from the side of the transfer substrate 10 opposite to the surface 10a on which the semiconductor chip 1 is placed (Z1 side). The laser light L then penetrates the transfer substrate 10 and irradiates the adhesive layer 2, causing the semiconductor chip 1 to peel off from the transfer substrate 10 and transfer the semiconductor chip 1 from the transfer substrate 10 to the substrate to be transferred 20. In other words, the transfer is performed by the laser lift-off method. That is, in this embodiment, in the transfer process, the semiconductor chip 1 is transferred to the substrate to be transferred 20 by irradiating the transfer substrate 10 with laser light L from the side of the transfer substrate 10 opposite to the surface on which the semiconductor chip 1 is placed, thereby deforming the adhesive layer 2.

[0034] The outline of step S1 is shown in the transfer process in Figure 6(c). In this embodiment, during the transfer process, the resist layer 3 is destroyed due to deformation of the adhesive layer 2, thereby separating the adhesive layer 2 from the semiconductor chip 1. The situation during the transfer of the semiconductor chip 1 will be described later. Note that in Figure 6, for the sake of simplification, the semiconductor chip 1 is shown as being transferred by a single laser beam L, but in reality, as shown in Figure 4, the semiconductor chip 1 is separated and transferred as a whole by intermittently irradiating it multiple times with a laser beam L having a spot area smaller than the area of ​​the semiconductor chip 1.

[0035] Returning to Figure 5, in step S2, the control unit 60 (see Figure 1) determines whether all of the multiple semiconductor chips 1 placed on the transfer substrate 10 have been transferred. If the result in step S2 is No (all of the multiple semiconductor chips 1 placed on the transfer substrate 10 have not been transferred), the process returns to step S1 and continues. If the result in step S2 is Yes (all of the multiple semiconductor chips 1 placed on the transfer substrate 10 have been transferred), the semiconductor chip transfer method process ends.

[0036] (Conditions during semiconductor chip transfer) Next, with reference to Figure 7, the transfer process of the semiconductor chip 1 in this embodiment will be described.

[0037] As shown in Figure 7, when the adhesive layer 2 is irradiated with laser light L, the adhesive layer 2 deforms into a convex shape that protrudes on the side opposite to the side irradiated with laser light L (Z2 side). The resist layer 3 is then deformed by the deformed adhesive layer 2. Here, as mentioned above, the resist layer 3 has less ductility than the adhesive layer 2, so the entire portion of the resist layer 3 corresponding to the deformed adhesive layer 2 is destroyed because it cannot follow the deformation of the adhesive layer 2. As a result of the destruction of the resist layer 3, the area of ​​adhesion between the resist layer 3 and the semiconductor chip 1 is almost eliminated, and the semiconductor chip 1 separates from the resist layer 3 (adhesive layer 2) by its own weight. In addition, fragments 3c of the resist layer 3 are attached to the portion of the semiconductor chip 1 corresponding to the destroyed portion of the resist layer 3 after transfer. In other words, in this embodiment, during the transfer process, the resist layer 3 is destroyed (cracking) due to the deformation of the adhesive layer 2 when it separates from the semiconductor chip 1, and is divided into a portion that adheres to the adhesive layer 2 and a portion that adheres to the semiconductor chip 1. In this embodiment, if even one crack occurs in the resist layer 3, the resist layer 3 is considered to be destroyed.

[0038] Furthermore, in this embodiment, the resist layer 3 is configured such that it does not have any adhesive force to the semiconductor chip 1 after being separated from it.

[0039] (Effects of the embodiment) Next, the effects of this embodiment will be described.

[0040] In this embodiment, as described above, during the transfer process, the resist layer 3 is destroyed due to deformation of the adhesive layer 2, thereby separating the adhesive layer 2 from the semiconductor chip 1. As a result of the destruction of the resist layer 3, the area of ​​adhesion between the resist layer 3 and the semiconductor chip 1 during transfer is almost eliminated. Therefore, since the adhesive force between the resist layer 3 attached to the adhesive layer 2 and the semiconductor chip 1 during transfer is almost eliminated, it is possible to provide an element transfer method that can separate the semiconductor chip 1 from the adhesive layer 2 even when the semiconductor chip 1 has a relatively small thickness and low self-weight.

[0041] Furthermore, in this embodiment, as described above, the resist layer 3 has less ductility than the adhesive layer 2. As a result, during transfer, the resist layer 3 cannot follow the deformation of the adhesive layer 2 and is destroyed, making it easy to destroy the resist layer 3.

[0042] Furthermore, in this embodiment, as described above, the resist layer 3 is applied as the breakdown layer. This allows the resist layer 3, which is formed as a protective film (mask) when processing (patterning) the substrate in the semiconductor chip 1 manufacturing process, to also be used as the breakdown layer, thus reducing the step of forming a new layer to be applied as the breakdown layer. This simplifies the device transfer process.

[0043] [Differentiation] It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. The scope of the present invention is defined by the claims rather than by the description of the embodiments above, and further includes all modifications (exceptions) within the meaning and scope equivalent to the claims.

[0044] For example, the above embodiment shows an example in which a resist layer is applied as the breakdown layer of the present invention, but the present invention is not limited thereto. For example, the breakdown layer may be formed from a material other than a resist layer.

[0045] Furthermore, although the above embodiment shows an example in which the laser beam L is irradiated onto the semiconductor chip 1 such that the spot regions LS of the laser beam L do not overlap with each other, the present invention is not limited to this. For example, the laser beam L may be irradiated onto the semiconductor chip 1 such that the spot regions LS of the laser beam L overlap with each other.

[0046] Furthermore, in the above embodiment, an example was shown in which fragments 3c of the resist layer 3 are attached to the portion of the semiconductor chip 1 corresponding to the portion where the resist layer 3 is destroyed after transfer. However, the present invention is not limited to this. For example, the semiconductor chip 1 after transfer does not need to have fragments 3c of the resist layer 3 attached to it.

[0047] Furthermore, although the above embodiment shows an example where the area of ​​the spot region LS of the laser beam L is smaller than the area of ​​the semiconductor chip 1, the present invention is not limited to this. For example, the area of ​​the spot region LS of the laser beam L may be greater than or equal to the area of ​​the semiconductor chip 1.

[0048] Furthermore, although the above embodiment shows an example where the transfer substrate 10 is circular and the substrate to be transferred 20 is rectangular, the present invention is not limited to this. For example, the shapes of both the transfer substrate 10 and the substrate to be transferred 20 may be circular or polygonal.

[0049] Furthermore, although the above embodiment shows an example in which the manufacturing substrate 80 and the semiconductor chip 1 are fixed by the tether portion 3b of the resist layer 3, the present invention is not limited to this. For example, the manufacturing substrate 80 and the semiconductor chip 1 may be fixed by an adhesive or the like instead of the tether portion 3b of the resist layer 3.

[0050] Furthermore, although the above embodiment shows an example where the spot area LS of the laser beam L is rectangular in shape, the present invention is not limited to this. For example, the spot area LS of the laser beam L may be circular in shape.

[0051] Furthermore, although the above embodiment shows an example in which a device with a small thickness, such as an InP chip, is used as the semiconductor chip 1, the present invention is not limited thereto. For example, various semiconductor devices other than InP chips may be used as the semiconductor chip 1.

[0052] Furthermore, in the above embodiment, an example was shown in which the moving mechanism 50 is configured to be movable for both the transfer substrate holding portion 30 and the substrate to be transferred holding portion 40, but the present invention is not limited to this. For example, the moving mechanism 50 may be provided separately for the transfer substrate holding portion 30 and the substrate to be transferred holding portion 40.

[0053] Furthermore, while the above embodiment shows an example where the area of ​​the adhesion region between the resist layer 3 and the semiconductor chip 1 is almost eliminated due to the destruction of the resist layer 3, the present invention is not limited to this. For example, the area of ​​the adhesion region between the resist layer 3 and the semiconductor chip 1 due to the destruction of the resist layer 3 only needs to be small enough that the semiconductor chip 1 can be separated from the resist layer 3 (adhesive layer 2) by its own weight. [Explanation of Symbols]

[0054] 1. Semiconductor chip (device) 2 Adhesive layer 3. Resist layer (destruction layer) 10 Transfer substrate (first substrate) 10a. Surface (the surface on which the elements are placed, the surface on which the elements are arranged) 20 Transfer substrate (second substrate) 30 Transfer substrate holding section (first substrate holding section) 70 Laser beam irradiation area 100 Semiconductor chip transfer equipment (device transfer equipment) L Laser light

Claims

1. The process involves a placement step of stacking and arranging an adhesive layer, a fracture layer, and an element on a first substrate so that they adhere to each other in that order, The method includes a transfer step of transferring the element to a second substrate by irradiating the first substrate with laser light from the side opposite to the surface on which the element is placed toward the first substrate, thereby deforming the adhesive layer. An element transfer method wherein, in the transfer step, the destructible layer is destroyed due to deformation of the adhesive layer, thereby separating the adhesive layer and the element.

2. The method for transferring an element according to claim 1, wherein the fractured layer has a ductility less than that of the adhesive layer.

3. The device transfer method according to claim 1, wherein the destruction layer includes a resist layer.

4. A first substrate holding section holds a first substrate in which an adhesive layer, a fracture layer, and an element are stacked and arranged so as to adhere to each other in that order, The device includes a laser beam irradiation unit that irradiates the first substrate with laser light from the side opposite to the surface on which the element is placed, toward the first substrate, thereby deforming the adhesive layer and transferring the element to the second substrate, An element transfer apparatus wherein the laser light irradiation unit is configured to irradiate the element with laser light in such a way that it destroys the destructive layer due to deformation of the adhesive layer, thereby separating the adhesive layer from the element.

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