Wafer for temperature measurement, and substrate processing system using the same

Abstract

The present invention provides a temperature-measuring wafer that can be used under higher temperature conditions while improving operational efficiency, and a substrate processing system using the same. [Solution] The temperature measuring wafer 1 comprises a temperature sensor 3, a transmitter 8, and a battery board 7. The transmitter 8 wirelessly transmits the temperature data of the object to be measured by the temperature sensor 3 to the temperature measuring wafer 1. In other words, the temperature measuring wafer 1 communicates information to the outside wirelessly, thus avoiding a decrease in operating efficiency caused by communication wires. The battery board 7 supplies power to the temperature sensor 3 and the transmitter 8 using an all-solid-state secondary battery 21. By using the all-solid-state secondary battery 21, the temperature measuring wafer 1 can be operated without performance degradation even under higher temperature conditions. Therefore, the operating efficiency of the temperature measuring wafer 1 can be improved, and the temperature measuring wafer 1 can be used under higher temperature conditions.

Description

Technical Field

[0001] The present invention relates to a wafer for temperature measurement that measures the temperature of a heating plate, and a substrate processing system using the same.

Background Art

[0002] Conventional substrate processing apparatuses include a plurality of heat treatment units, and each of the plurality of heat treatment units includes a heating plate on which a substrate is placed for heat treatment. For the heating plate, strict in-plane temperature uniformity is required. Therefore, in order to individually adjust the individual differences of the heating plates, it is necessary to measure the temperature characteristics of each heating plate and appropriately control the temperature of the heating plate, particularly at the time of startup of the apparatus and during regular maintenance.

[0003] As a method for measuring the temperature characteristics of a heating plate, a method is used in which a wafer for temperature measurement provided with a temperature sensor is placed on the heating plate, and the temperature of the heating plate is measured at predetermined time intervals. Examples of the conventionally used wafer for temperature measurement include a wired wafer for temperature measurement using a wire and a wireless wafer for temperature measurement not using a wire.

[0004] The wired wafer for temperature measurement includes a sensor substrate provided with a temperature sensor and a wireless communication substrate connected to the sensor substrate via a communication wire (see, for example, Patent Document 1). The wireless communication substrate includes a battery and a wireless communication circuit. When using the wired wafer for temperature measurement, the sensor substrate is transported so as to be separated from the wireless communication substrate, and the sensor substrate is placed on the heating plate. Then, the temperature characteristics of the heating plate are measured by the temperature sensor mounted on the sensor substrate. The measurement data is transmitted from the sensor substrate to the wireless communication substrate, and further transmitted to the outside of the wafer for temperature measurement by the wireless communication circuit.

[0005] A wireless temperature measuring wafer comprises a wireless wafer equipped with a temperature sensor, battery, memory, and controller (see, for example, Patent Document 2). When using a wireless temperature measuring wafer, the wireless wafer is placed on a heating plate, and the temperature characteristics of the heating plate are measured by the temperature sensor. The measurement data obtained from this measurement is stored in the memory. After measuring the temperature characteristics and storing the measurement data for multiple heating plates, the wireless wafer is transported from the heating plate into a predetermined carrier. After the wireless wafer has been transported to the carrier, the controller reads each of the measurement data from the memory and transmits the measurement data to the outside of the wireless wafer. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2021-081264 [Patent Document 2] Japanese Patent Publication No. 2006-080489 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] However, conventional examples with such configurations have the following problems. First, conventional wired temperature measuring wafers require manual operations such as loading and placing the temperature measuring wafer into the substrate processing apparatus, or connecting the communication wire. Therefore, when using conventional wired temperature measuring wafers, it is difficult to fully automate the temperature measuring operation for the substrate processing apparatus, making it difficult to improve the efficiency of the process of measuring the temperature of the heating plate.

[0008] Furthermore, when using conventional wired temperature measurement wafers, there are concerns that the communication wires may bend and break, or that twisting of the communication wires may cause transport errors in the sensor substrate. For example, when transporting the sensor substrate away from the wireless communication substrate, if the direction in which the communication wires extend from the wireless communication substrate differs from the direction in which the sensor substrate is transported, significant twisting of the communication wires will occur. Thus, it is difficult to improve the operational efficiency of conventional wired temperature measurement wafers.

[0009] Next, a concern arises with conventional wireless temperature measurement wafers: they have a low upper limit to their operating temperature. Specifically, because the wireless wafer, which contains the battery, memory, and controller, is placed on a heating plate, the electronic components such as the memory and controller, as well as the battery, tend to become overheated. Therefore, conventional wireless temperature measurement wafers have a lower upper limit to their operating temperature compared to conventional wired temperature measurement wafers.

[0010] Furthermore, conventional wireless temperature measurement wafers generally use lithium-ion rechargeable batteries. However, lithium-ion rechargeable batteries suffer significant performance degradation at high temperatures. This leads to a decrease in the operating temperature limit of wireless temperature measurement wafers.

[0011] Specifically, conventional wired temperature measurement wafers can be used under conditions where the heating plate is heated to a high temperature of approximately 250°C. On the other hand, the operating temperature range of conventional wireless temperature measurement wafers is limited to approximately 150°C. Therefore, when heat treatment of a substrate is performed by controlling the heating plate temperature to between 150°C and 250°C, it is not possible to measure the temperature characteristics using a wireless temperature measurement wafer. Thus, conventional wireless temperature measurement wafers have the problem of having a narrow usable temperature range and low versatility.

[0012] This invention has been made in view of these circumstances, and aims to provide a temperature measuring wafer that can be used under higher temperature conditions while improving operational efficiency, and a substrate processing system using the same. [Means for solving the problem]

[0013] To achieve this objective, the present invention has the following configuration. In other words, the temperature measuring wafer according to the present invention comprises a wafer body that can be placed on a temperature to be measured, Multiple temperature sensors are disposed on the wafer body, With the wafer body placed on the object to be measured for temperature, a transmitting unit capable of wirelessly transmitting temperature data detected by the temperature sensor, A battery unit having an all-solid-state secondary battery disposed in the wafer body and supplying power to the temperature sensor and the transmitting unit, respectively, It is characterized by having the following features.

[0014] [Function and Effects] According to the temperature measuring wafer of the present invention, the wafer body comprises a temperature sensor, a transmitting unit, and a battery unit. The transmitting unit wirelessly transmits the temperature data of the object to be measured by the temperature sensor to the outside of the temperature measuring wafer. In other words, by providing the transmitting unit in the wafer body, communication wires are not required, and the temperature measuring wafer can be operated wirelessly. In other words, by operating the temperature measuring wafer wirelessly, the decrease in operating efficiency caused by communication wires can be avoided, and the operating efficiency of the temperature measuring wafer can be improved.

[0015] Furthermore, the battery unit uses an all-solid-state rechargeable battery to supply power to both the temperature sensor and the transmitter. By incorporating an all-solid-state rechargeable battery, the temperature measurement wafer can be operated without performance degradation even under higher temperature conditions compared to conventional configurations that used alkaline-ion batteries. Therefore, it is possible to improve the operating efficiency of the temperature measurement wafer and use the temperature measurement wafer under higher temperature conditions.

[0016] The transmitting unit wirelessly transmits temperature data while the wafer body is placed on the object to be measured. In other words, it can transmit temperature data of the object measured by the temperature sensor in real time. Therefore, with the temperature measurement wafer placed on the object to be measured, the following steps can be performed: measuring the temperature of the object, acquiring the temperature data of the object, adjusting the temperature of the object based on the temperature data, and measuring the temperature of the object again. As a result, the operation of adjusting the temperature of the object using the temperature measurement wafer can be performed more quickly and with higher accuracy.

[0017] Furthermore, in the invention described above, it is preferable that the battery section has a plurality of all-solid-state secondary batteries, and that the plurality of all-solid-state secondary batteries are electrically connected in series and arranged along the surface of the wafer body.

[0018] [Function / Effect] In the temperature measuring wafer according to the present invention, multiple all-solid-state secondary batteries are electrically connected in series in the battery section. By electrically connecting multiple all-solid-state secondary batteries in series, the voltage of the power supplied from the battery section can be further improved. In addition, by connecting low-power thin-film all-solid-state secondary batteries in series, the required power can be secured while keeping the height of the battery section low.

[0019] Furthermore, in the invention described above, it is preferable to have a power supply unit that supplies power to the battery unit, and the power supply unit has a wireless power receiving unit that can receive power supplied from outside the temperature measuring wafer by electromagnetic induction.

[0020] [Function / Effect] The temperature measuring wafer according to the present invention has a wireless power receiving unit that can receive power supplied from outside the temperature measuring wafer by electromagnetic induction. With this configuration, wireless charging of the battery unit becomes possible, so the operating time of the temperature measuring wafer can be extended while operating the temperature measuring wafer wirelessly.

[0021] Further, in the above-described invention, the battery unit includes a first heat insulating sheet disposed on the wafer main body portion, and a housing portion that is disposed on the first heat insulating sheet and houses the all-solid-state secondary battery having a flat shape. It is preferable that the housing portion is laminated in order from the side closer to the first heat insulating sheet with a lower surface housing portion, a second heat insulating sheet, the all-solid-state secondary battery having a flat shape, a third heat insulating sheet, and an upper surface housing portion.

[0022] [Function and Effect] According to the wafer for temperature measurement according to the present invention, the battery unit includes a first heat insulating sheet and a housing portion. Since the first heat insulating sheet is disposed between the housing portion and the wafer main body portion, it is possible to avoid an increase in the temperature of the housing portion even when the temperature of the wafer for temperature measurement rises.

[0023] Further, the housing portion is laminated in order from the side closer to the first heat insulating sheet with a lower surface housing portion, a second heat insulating sheet, the all-solid-state secondary battery having a flat shape, a third heat insulating sheet, and an upper surface housing portion. That is, the all-solid-state secondary battery having a flat shape is sandwiched and laminated between the second heat insulating sheet and the third heat insulating sheet. Therefore, it is possible to more suitably prevent the all-solid-state secondary battery from becoming high temperature while reducing the thickness of the housing portion.

[0024] Further, in the above-described invention, it is preferable that the total thickness of the battery unit and the wafer main body portion is 4 mm or less.

[0025] [Function and Effect] According to the wafer for temperature measurement according to the present invention, the total thickness of the battery unit and the wafer main body portion is 4 mm or less. As a result, the thickness of the wafer for temperature measurement can be made smaller than the thickness of the transfer port of the apparatus where the temperature measurement target is disposed. As a result, with the wafer for temperature measurement held by a transfer arm or the like, the wafer for temperature measurement can be automatically transferred to the temperature measurement target via the transfer port. Therefore, it becomes easier to fully automate the operation of measuring the temperature of the temperature measurement target with the wafer for temperature measurement.

[0026] Furthermore, in the invention described above, it is preferable that the transmitting unit is disposed on the outer periphery of the wafer body.

[0027] [Function and Effects] According to the temperature measuring wafer of the present invention, since the transmitting unit is disposed on the outer periphery of the wafer body, the distance between the transmitting unit and the target to which temperature data is transmitted can be shortened when transmitting temperature data wirelessly from the transmitting unit. In addition, the presence of obstacles to wireless communication between the transmitting unit and the target can be avoided. Therefore, the accuracy of wireless communication by the transmitting unit can be further improved.

[0028] To achieve this objective, the present invention may have the following configuration. In other words, the present invention relates to a substrate processing system comprising a substrate processing apparatus that performs at least heat treatment on a substrate, and a temperature measuring wafer according to any one of claims 1 to 5, The substrate processing apparatus is The aforementioned temperature measurement target, comprising a heat treatment unit having a heating plate that performs heat treatment on the mounted substrate, A standby unit comprising a holding section for holding the temperature measuring wafer, and for keeping the temperature measuring wafer held by the holding section in standby inside the substrate processing apparatus, A transport unit for transporting the temperature measuring wafer between the heat treatment unit and the standby unit, A power supply unit that supplies power to the battery section of the temperature measuring wafer being transported to the standby unit, It is characterized by having the following features.

[0029] [Function and Effects] According to the substrate processing system of the present invention, a substrate processing unit comprising a temperature-measuring wafer and a substrate processing apparatus comprises a heat treatment unit, a standby unit, a transport unit, and a power supply unit. The transport unit transports the temperature-measuring wafer between the heat treatment unit and the standby unit. The heat treatment unit is equipped with a heating plate and performs heat treatment on the substrate mounted on the heating plate. The temperature-measuring wafer measures the temperature characteristics using the heating plate as the temperature measurement target.

[0030] As described above, the temperature-measuring wafer comprises a wafer body, a temperature sensor, a transmitter, and a battery. Therefore, the temperature-measuring wafer can be operated wirelessly, improving its operational efficiency. Furthermore, the battery unit is equipped with an all-solid-state rechargeable battery, enabling the temperature-measuring wafer to be used under higher temperature conditions. The transmitter wirelessly transmits temperature data while the wafer body is placed on the heating plate. As a result, the temperature data of the heating plate measured by the temperature sensor can be transmitted wirelessly in real time. Consequently, the operation of adjusting the temperature of the heating plate using the temperature-measuring wafer can be performed more quickly and with higher accuracy.

[0031] Furthermore, the substrate processing unit includes a standby unit and a power supply unit. The standby unit is, The system includes a holding unit for holding a temperature-measuring wafer, and the temperature-measuring wafer held by the holding unit is kept in standby mode inside the substrate processing apparatus. The power supply unit supplies power to the battery unit being transported to the standby unit. With this configuration, there is no need to transport the temperature-measuring wafer outside the substrate processing apparatus for the purpose of charging the battery unit. In other words, even if the power of the battery unit decreases while the temperature of the heating plate is being measured, the temperature-measuring wafer can be transported from the heat treatment unit to the standby unit, the power supply unit will charge the battery unit, and the temperature-measuring wafer can be transported back to the heat treatment unit to perform temperature measurement again. Therefore, the time during which the temperature-measuring wafer can be operated continuously inside the substrate processing apparatus can be extended, further improving the operating efficiency of the temperature-measuring wafer.

[0032] Furthermore, in the invention described above, it is preferable to include a receiving unit which is disposed outside the heat treatment unit and receives the temperature data transmitted wirelessly from the transmitting unit.

[0033] [Function / Effect] According to the substrate processing system of the present invention, the receiving unit receives temperature data wirelessly transmitted from the transmitting unit of the temperature measuring wafer. By equipping the substrate processing apparatus with a receiving unit, real-time wireless communication of temperature data can be performed inside the substrate processing apparatus while the temperature measuring wafer is mounted on the heating plate. As a result, wireless communication of the heating plate's temperature data can be performed even more quickly and accurately.

[0034] Furthermore, in the invention described above, a rotation mechanism is provided to rotate the temperature measuring wafer being transported to the standby unit so that when the temperature measuring wafer is mounted on the heating plate, the transmitting unit faces the direction of the receiving unit, It is preferable to include the following.

[0035] [Function and Effects] The substrate processing system according to the present invention is equipped with a rotation mechanism for rotating the temperature-measuring wafer being transported to the standby unit. The rotation mechanism rotates the temperature-measuring wafer so that the transmitting unit faces the receiving unit when the temperature-measuring wafer is mounted on the heating plate. By rotating the temperature-measuring wafer with the rotation mechanism, the distance between the transmitting unit and the receiving unit can be shortened when transmitting temperature data wirelessly while the temperature-measuring wafer is mounted on the heating plate. Furthermore, the presence of obstacles between the transmitting unit and the receiving unit can be avoided. Therefore, the accuracy of wireless communication using the temperature-measuring wafer can be further improved.

[0036] Furthermore, in the invention described above, the temperature measuring wafer is equipped with a battery temperature detection unit that detects the temperature of the battery section. The transmitting unit is configured to wirelessly transmit the temperature data of the battery unit detected by the battery temperature detection unit. The substrate processing apparatus is A wafer cooling control unit that performs control to cool the temperature measuring wafer when the temperature data of the battery unit exceeds a predetermined operating threshold, A notification unit that notifies that the temperature of the battery unit is above the operating threshold, It is preferable to include the following.

[0037] [Function / Effect] According to the substrate processing system of the present invention, the temperature data of the battery unit detected by the battery temperature detection unit is transmitted to the outside of the temperature measurement wafer by the transmission unit. The substrate processing apparatus is equipped with a wafer cooling control unit and a notification unit. When the temperature data of the battery unit exceeds a predetermined operating threshold, the wafer cooling control unit controls the cooling of the temperature measurement wafer, and the notification unit notifies that the temperature of the battery unit has exceeded the operating threshold.

[0038] The wafer cooling control unit controls the cooling of the temperature-measuring wafer, which quickly and reliably prevents a decrease in the performance of the temperature-measuring wafer due to an excessive rise in the battery unit temperature. Furthermore, the notification unit notifies when the battery unit temperature exceeds the operating threshold, allowing operators using the substrate processing system to quickly understand that the battery unit temperature has exceeded the operating threshold. As a result, operators can quickly perform operations to prevent the temperature-measuring wafer from overheating. Consequently, a decrease in the performance of the temperature-measuring wafer due to an excessive rise in the battery unit temperature can be more reliably avoided.

[0039] Furthermore, in the above-described invention, the substrate processing apparatus is preferably equipped with a temperature control unit that adjusts the temperature of the heating plate based on the temperature data of the heating plate transmitted from the transmitting unit, and the temperature control unit adjusts the temperature of the heating plate based on the temperature data of the heating plate while the temperature measuring wafer is placed on the heating plate.

[0040] [Function / Effect] According to the substrate processing system of the present invention, the substrate processing apparatus includes a temperature control unit. The temperature control unit adjusts the temperature of the heating plate based on the temperature data of the heating plate transmitted from the temperature measurement wafer transmission unit. The temperature control unit adjusts the temperature of the heating plate based on the temperature data of the heating plate while the temperature measurement wafer is placed on the heating plate.

[0041] In this case, with the temperature measurement wafer placed on the heating plate, three steps can be performed in sequence: measuring the temperature data of the heating plate; transmitting the temperature data of the heating plate from the temperature measurement wafer to the substrate processing apparatus; and the temperature control unit adjusting the temperature of the heating plate on which the temperature measurement wafer is placed based on the temperature data.

[0042] Since these processes are performed continuously while the temperature measurement wafer is placed on the heating plate, the temperature control unit can quickly adjust the temperature of the heating plate and then quickly measure the temperature data of the heating plate again using the temperature measurement wafer that remains on the heating plate. In other words, the temperature control unit can quickly confirm whether the temperature of the heating plate has been accurately adjusted. As a result, by configuring the system to repeatedly perform these processes while the temperature measurement wafer is placed on the heating plate, the temperature of the heating plate can be adjusted quickly and accurately.

[0043] To achieve this objective, the present invention may have the following configuration. In other words, the present invention relates to a substrate processing system comprising a substrate processing apparatus that performs at least heat treatment on a substrate, The substrate processing apparatus is The aforementioned temperature measurement target, comprising a heat treatment unit having a heating plate that performs heat treatment on the mounted substrate, A standby unit comprising a holding section for holding a temperature measuring wafer according to any one of claims 1 to 6, and for keeping the temperature measuring wafer held by the holding section on standby inside the substrate processing apparatus, A transport unit for transporting the temperature measuring wafer between the heat treatment unit and the standby unit, A power supply unit that supplies power to the battery section of the temperature measuring wafer being transported to the standby unit, It is characterized by having the following features.

[0044] [Function and Effects] According to the substrate processing system of the present invention, a substrate processing unit comprising a substrate processing apparatus comprises a heat processing unit, a standby unit, a transport unit, a power supply unit, and a holding unit. The transport unit transports a wafer for temperature measurement between the heat processing unit and the standby unit. The heat processing unit is equipped with a heating plate and performs heat processing on a substrate mounted on the heating plate. The wafer for temperature measurement measures the temperature characteristics using the heating plate as the temperature measurement target.

[0045] The holding unit holds the temperature-measuring wafer. As described above, the temperature-measuring wafer comprises a wafer body, a temperature sensor, a transmitting unit, and a battery unit. Therefore, the temperature-measuring wafer can be operated wirelessly, improving its operational efficiency. Furthermore, since the battery unit is equipped with an all-solid-state secondary battery, the temperature-measuring wafer can be used under higher temperature conditions. The transmitting unit wirelessly transmits temperature data while the wafer body is placed on the heating plate. Therefore, the temperature data of the heating plate measured by the temperature sensor can be transmitted wirelessly in real time. As a result, the operation of adjusting the temperature of the heating plate using the temperature-measuring wafer can be performed more quickly and with higher accuracy.

[0046] Furthermore, the substrate processing unit includes a standby unit and a power supply unit. The standby unit is, The system includes a holding unit for holding a temperature-measuring wafer, and the temperature-measuring wafer held by the holding unit is kept in standby mode inside the substrate processing apparatus. The power supply unit supplies power to the battery unit being transported to the standby unit. With this configuration, there is no need to transport the temperature-measuring wafer outside the substrate processing apparatus for the purpose of charging the battery unit. In other words, even if the power of the battery unit decreases while the temperature of the heating plate is being measured, the temperature-measuring wafer can be transported from the heat treatment unit to the standby unit, the power supply unit will charge the battery unit, and the temperature-measuring wafer can be transported back to the heat treatment unit to perform temperature measurement again. Therefore, the time during which the temperature-measuring wafer can be operated continuously inside the substrate processing apparatus can be extended, further improving the operating efficiency of the temperature-measuring wafer. [Effects of the Invention]

[0047] According to the temperature measuring wafer and substrate processing system using the same according to the present invention, it is possible to improve operating efficiency while enabling use under higher temperature conditions. [Brief explanation of the drawing]

[0048] [Figure 1] This figure illustrates the configuration of a temperature measuring wafer according to Example 1. (a) is a plan view of the temperature measuring wafer, and (b) is a front view of the temperature measuring wafer. [Figure 2] This is a longitudinal cross-sectional view of the battery substrate according to Example 1. [Figure 3] This is a functional block diagram of the substrate processing system according to Example 1. [Figure 4] This is a cross-sectional view of the substrate processing apparatus according to Example 1. [Figure 5] This is a longitudinal cross-sectional view of the substrate processing apparatus according to Example 1. [Figure 6] This diagram illustrates the configuration of the substrate transport mechanism according to Example 1. (a) is a front view of the substrate transport mechanism, and (b) is a top view of the substrate transport mechanism. [Figure 7]This is a longitudinal cross-sectional view of a substrate processing apparatus showing the arrangement of the heat treatment unit according to Example 1. [Figure 8] This is a longitudinal cross-sectional view of the heat treatment unit according to Example 1. [Figure 9] This is a cross-sectional view of the heat treatment unit according to Example 1. [Figure 10] This diagram illustrates the configuration of the standby unit according to Example 1. (a) is a front view of the standby unit, and (b) is a top view of the standby unit. [Figure 11] This is a flowchart showing the operation of the substrate processing system according to Example 1. [Figure 12] This is a cross-sectional view illustrating step S2 according to Example 1. [Figure 13] (a) to (c) are longitudinal cross-sectional views illustrating step S3 according to Example 1. [Figure 14] (a) to (c) are longitudinal cross-sectional views illustrating step S3 according to Example 1. [Figure 15] This is a cross-sectional view illustrating step S3 in Example 1. [Figure 16] This is a cross-sectional view illustrating step S3 in the comparative example. [Figure 17] This is a cross-sectional view illustrating step S3 in Example 1. [Figure 18] This is a cross-sectional view illustrating step S6 in Example 1. [Figure 19] This is a cross-sectional view illustrating step S6 in Example 1. [Figure 20] This is a plan view illustrating step S7 in Example 1. (a) is a plan view showing the state before rotation, and (b) is a plan view showing the state after rotation. [Figure 21] This is a cross-sectional view illustrating step S2 according to Example 1. [Figure 22] This is a cross-sectional view illustrating step S3 in Example 1. [Figure 23] This is a cross-sectional view illustrating step S9 in Example 1. [Figure 24](a) to (c) are longitudinal cross-sectional views illustrating step S10 according to Example 1. [Figure 25] This is a plan view of the battery unit according to Example 1. [Figure 26] This is a longitudinal cross-sectional view of a substrate processing apparatus showing the arrangement of the heat treatment unit according to Example 2. [Figure 27] This is a cross-sectional view illustrating step S6 according to Example 2. [Figure 28] This is a cross-sectional view of the substrate processing apparatus according to Example 3. [Figure 29] This is a longitudinal cross-sectional view of the substrate processing apparatus according to Example 3. [Modes for carrying out the invention] [Examples]

[0049] Hereinafter, Embodiment 1 of this invention will be described with reference to the drawings.

[0050] As shown in Figure 3, the substrate processing system 100 according to Embodiment 1 comprises a temperature-measuring wafer 1 and a substrate processing apparatus 30. The temperature-measuring wafer 1 measures the temperature of a heating plate 54 (see Figure 4) in a heat treatment unit 43 provided in the substrate processing apparatus 30. The substrate processing apparatus 30 performs various processes on a normal semiconductor wafer W (hereinafter referred to as "wafer W"). These various processes include at least heat treatment.

[0051] <Configuration of a wafer for temperature measurement> First, the temperature measuring wafer 1 will be described using Figure 1 and other figures. Figure 1(a) is a plan view of the temperature measuring wafer 1 according to Example 1. Figure 1(b) is a front view of the temperature measuring wafer 1 according to Example 1.

[0052] The temperature measuring wafer 1 comprises a wafer body 2, a plurality of temperature sensors 3, a measurement substrate 5, a battery substrate 7, and a power receiving substrate 9. The wafer body 2 is formed in a disc shape. The wafer body 2 is made of silicon or ceramic, for example. The wafer body 2 is formed with approximately the same diameter as the wafer W (for example, 300 mm).

[0053] Each of the temperature sensors 3 is positioned on the surface of the wafer body 2. Each of the temperature sensors 3 measures the temperature of the wafer body 2. In Figure 1(a), for the sake of explanation, 17 temperature sensors 3 are provided on the wafer body 2. The multiple temperature sensors 3 can be arranged radially, concentrically, or in combination thereof on the surface of the wafer body 2, for example. In Example 1, one temperature sensor 3 is positioned at the center of the wafer body 2, and eight temperature sensors are positioned on the outer periphery of the wafer body 2. Eight temperature sensors are positioned between the outer periphery and the center of the wafer body 2. It is preferable that the multiple temperature sensors 5 are evenly distributed on the surface of the wafer body 2. Examples of temperature sensors 3 include thermocouples, resistance thermometers, and quartz crystal oscillators. In Example 1, it is preferable that the outer periphery of the wafer body 2 corresponds to the portion outside the concentric circles, which are approximately 2 / 3 of the diameter of the wafer body 2.

[0054] The measurement board 5 performs various information processing, such as digitizing the data measured on the temperature measurement wafer 1, and communicates with the outside of the temperature measurement wafer 1. The measurement board 5 is located on a part of the outer periphery of the wafer body 2. Figure 1(a) shows an example where the measurement board 5 is located on the right end of the outer periphery of the wafer body 2. As shown in Figure 3, the measurement board 5 includes an A / D converter 6 and a transmission unit 8.

[0055] The A / D converter 6 is electrically connected to the temperature sensor 3 and the transmitter 8. The A / D converter 6 digitally converts the temperature data measured by the temperature sensor 3 and transmits it to the transmitter 8. The transmitter 8 transmits the temperature data and other information to the outside of the temperature measuring wafer 1. The information is transmitted wirelessly by the transmitter 8. In other words, the temperature measuring wafer 1 is a wireless temperature measuring wafer that communicates with the outside wirelessly in real time. A wireless communication method such as Bluetooth (registered trademark) or Wi-Fi (registered trademark) is used as the transmitter 8.

[0056] The battery substrate 7 supplies power to the temperature sensor 3 and the measurement substrate 5, respectively. The battery substrate 7 is disposed on the surface of the wafer body 2. Figure 1(a) shows an example where the battery substrate 7 is disposed on the left end side of the wafer body 2. The battery substrate 7 corresponds to the battery portion in this invention.

[0057] Figure 2 is a longitudinal cross-sectional view of the battery substrate 7 disposed on the wafer body 2. The battery substrate 7 comprises a heat insulating sheet 15 and a housing 17. The heat insulating sheet 15 is positioned to be in contact with the surface (top surface) of the wafer body 2. The housing 17 is positioned to be in contact with the surface of the heat insulating sheet 15. The heat insulating sheet 15 corresponds to the first heat insulating sheet in the present invention. The housing 17 corresponds to the housing portion in the present invention.

[0058] The heat insulating sheet 15 prevents heat from the wafer body 2 from being transferred to the housing 17 and the interior of the housing 17. In other words, the heat insulating sheet 15 prevents the temperature inside the housing 17 from rising due to the temperature rise of the wafer body 2. It is preferable to use a fibrous material such as glass fiber or carbon fiber as the material that makes up the heat insulating sheet 15. It is even more preferable to use silicone glass cloth as the material that makes up the heat insulating sheet 15. By using these materials, the heat insulating properties of the heat insulating sheet 15 can be improved while making the battery substrate 7 thinner.

[0059] The housing 17 houses a battery unit 19 and the like. The housing 17 can be made of stainless steel or other metals. The internal space of the housing 17 is sealed by the upper plate 17a, lower plate 17b, and side plates 17c. The housing 17 protects the built-in battery board 7 and the like. The upper plate 17a corresponds to the upper housing portion of the present invention. The lower plate 17b corresponds to the lower housing portion of the present invention.

[0060] The battery unit 19 comprises a base substrate 20 and an all-solid-state secondary battery 21. The base substrate 20 is a plate-shaped member, for example, made of silicon or the like. The all-solid-state secondary battery 21 is a secondary battery disposed on the upper surface of the base substrate 20. For example, as shown in Figure 25, the battery unit 19 has a configuration in which multiple all-solid-state secondary batteries 21 (for example, 40 all-solid-state secondary batteries 21) are arranged in a two-dimensional matrix on the base substrate 20. As the solid electrolyte of the all-solid-state secondary battery 21, an oxide-based material such as sodium iron phosphate or a sulfide-based material such as phosphorus pentasulfide may be used as appropriate. By using an all-solid-state secondary battery 21 without an electrolyte in the battery substrate 7, performance degradation caused by high temperatures of the battery substrate 7 can be suppressed. Therefore, the operating limit temperature of the battery substrate 7 can be further improved.

[0061] As shown in Figure 2, an insulating sheet 23 is provided on the lower surface of the battery unit 19, and an insulating sheet 25 is provided on the upper surface of the battery unit 19. That is, the insulating sheet 23 is in contact with the lower surface of the base substrate 20, and the insulating sheet 25 is in contact with the upper surface of the all-solid-state secondary battery 21. The insulating sheets 23 and 25 are made of the same material as the insulating sheet 15. Inside the housing 17, the insulating sheets 23 and 25 suppress the transfer of heat to the all-solid-state secondary battery 21. The insulating sheet 23 corresponds to the second insulating sheet in the present invention. The insulating sheet 25 corresponds to the third insulating sheet in the present invention.

[0062] As shown in Figure 2, tape 27 is attached to the lower surface of the heat insulating sheet 23, and tape 29 is attached to the upper surface of the heat insulating sheet 25. In other words, a battery stack 40 is arranged inside the housing 17, in which tape 27, heat insulating sheet 23, base substrate 20, all-solid-state secondary battery 21, heat insulating sheet 25, and tape 29 are stacked in that order.

[0063] The tape 27 has an adhesive surface on its upper side, which is in contact with the heat insulating sheet 23. The lower side of the tape 27 is a flat surface. Therefore, by attaching the tape 27 to the lower surface of the heat insulating sheet 23, the heat insulating sheet 23 can be fixed to the battery unit 19, and the flatness of the lower surface of the battery stack 40 can be improved. The tape 27 is preferably a heat-resistant tape made of a polyimide-based material, such as Kapton tape (Kapton: registered trademark). By using a heat-resistant tape as the tape 27, the rise in temperature of the all-solid-state secondary battery 21 can be more effectively suppressed.

[0064] The tape 29 has an adhesive surface on its lower side, which is in contact with the heat insulation sheet 25. The upper surface of the tape 29 is a flat surface. Therefore, by attaching the tape 29 to the upper surface of the heat insulation sheet 25, the heat insulation sheet 25 can be fixed to the battery unit 19, and the flatness of the upper surface of the battery stack 40 can be improved. The tape 29 is made of the same material as the tape 27. By using a heat-resistant tape as the tape 27, the rise in temperature of the all-solid-state secondary battery 21 can be more effectively suppressed.

[0065] Thus, the battery substrate 7 has a structure in which the heat insulating sheet 15, the lower plate 17b of the housing 17, the tape 27, the heat insulating sheet 23, the battery unit 19, the heat insulating sheet 25, the tape 29, and the upper plate 17a of the housing 17 are stacked in order from the side closest to the wafer body 2 in the thickness direction (z direction in Figure 2). The thickness d of the temperature measuring wafer 1 in the area where the battery substrate 7 is installed is configured to be 4 mm or less. The thickness d corresponds to the sum of the thickness of the wafer body 2 and the thickness of the battery portion 7. Of the entire temperature measuring wafer 1, the part where the battery portion 7 is formed is the thickest. That is, because the thickness d is 4 mm or less, the overall thickness of the temperature measuring wafer 1 is 4 mm or less. By having such a stacked structure in which a flat all-solid-state secondary battery 21 is sandwiched between multiple heat insulating sheets, the heat resistance of the battery substrate 7 can be improved while further reducing the thickness of the battery substrate 7 equipped with the all-solid-state secondary battery 21.

[0066] As shown in Figure 1 and other figures, the battery board 7 is equipped with a battery temperature detection unit 11. The battery temperature detection unit 11 is a temperature sensor built into the battery board 7. The battery temperature detection unit 11 detects the temperature of the battery board 7. As shown in Figure 3, the battery temperature detection unit 11 is electrically connected to the measurement board 5. The temperature data of the battery board 7 detected by the battery temperature detection unit 11 is transmitted to the measurement board 5. The transmitted temperature data of the battery board 7 is digitally converted by the A / D converter 6 and made available for transmission to the outside of the temperature measurement wafer 1 by the transmission unit 8.

[0067] The power receiving board 9 is disposed on the surface of the wafer body 2. Figure 1(a) shows an example where the power receiving board 9 is disposed on the lower end side of the wafer body 2. The power receiving board 9 is electrically connected to the battery board 7 and the measurement board 5, respectively. The power receiving board 9 includes a power receiving unit 13 and a board temperature sensing unit 14. The power receiving unit 13 is equipped with a power receiving integrated circuit (power receiving IC) and is configured to receive power. The power receiving unit 13 receives power transmitted from outside the temperature measuring wafer 1 and transmits it to the battery board 7. The power receiving unit 13 is configured to be able to receive external power wirelessly. That is, by providing the power receiving board 9 on the wafer body 2, charging of the battery board 7 can be performed wirelessly. The power receiving board 9 corresponds to the power supply unit in the present invention. The power receiving unit 13 corresponds to the wireless power receiving unit in the present invention.

[0068] The substrate temperature detection unit 14 is a temperature sensor built into the power receiving board 9. The substrate temperature detection unit 14 detects the temperature of the power receiving board 9. As shown in Figure 3, the substrate temperature detection unit 14 is electrically connected to the measurement board 5. The temperature data of the power receiving board 9 detected by the substrate temperature detection unit 14 is transmitted to the measurement board 5. The transmitted temperature data of the power receiving board 9 is digitally converted by the A / D converter 6 and made available for transmission to the outside of the temperature measurement wafer 1 by the transmission unit 8.

[0069] As shown in Figure 1, a notch 10 is formed on the outer edge of the temperature measuring wafer 1. The notch 10 functions as a reference for adjusting the orientation of the measurement substrate 5 on the temperature measuring wafer 1. The depth of the notch 10 is approximately 1 mm, for example. In Figure 1(a), the notch 10 is formed on the upper side of the temperature measuring wafer 1. By rotating the temperature measuring wafer 1 appropriately using the notch 10 as a reference, the orientation of the measurement substrate 5 in a plan view can be adjusted to a predetermined angle. Note that the temperature measuring wafer 1 may have a different configuration than the notch 10, as long as it serves as a reference for adjusting the orientation of the measurement substrate 5. That is, instead of the notch 10, an orientation flat or mark may be formed on the temperature measuring wafer 1.

[0070] <Configuration of substrate processing equipment> Next, the substrate processing apparatus 30 will be described using Figure 4 and other figures. Figure 4 is a cross-sectional view of the substrate processing apparatus 30 according to Example 1. Figure 5 is a longitudinal cross-sectional view of the substrate processing apparatus 30. Figure 5 corresponds to the cross-sectional view taken along arrow aa in Figure 4. The substrate processing apparatus 30 according to Example 1 performs coating and heat treatment on a wafer W. In the substrate processing apparatus 30, the left-right direction is defined as the x-direction, the front-back direction as the y-direction, and the up-down direction as the z-direction.

[0071] The substrate processing apparatus 30 comprises an indexer block 31 and a processing block 32. The indexer block 31 is equipped with two openers 33 and 34 and two substrate transport mechanisms TR1 and TR2. The two openers 33 and 34 (carrier mounting sections) on the indexer block 31 each mount a carrier C capable of accommodating multiple wafers W. For example, a hoop (FOUP: Front Open Unified Pod) is used as the carrier C. The carrier C is configured to accommodate a temperature measurement wafer 1 in addition to the wafers W.

[0072] Each of the openers 33 and 34 includes a mounting table 35 on which the carrier C is placed, an opening 36 for passing the wafer W or temperature measuring wafer 1 through, a shutter member (not shown) for opening and closing the opening 36 and attaching and detaching the lid to the carrier body, and a shutter member drive mechanism (not shown) for driving the shutter member.

[0073] Each of the substrate transport mechanisms TR1 and TR2 comprises two hands 37, a forward / backward drive unit 38, and a lifting / rotating drive unit 39. Each hand 37 holds a wafer W. Each hand 37 is movably mounted on the forward / backward drive unit 38. The forward / backward drive unit 38 can move the two hands 37 individually. The two hands 37 are configured similarly to the two hands 47 provided in the substrate transport mechanism TR3. Each hand 37 is configured to hold a wafer 1 for temperature measurement.

[0074] The lifting and rotating drive unit 39 lifts and rotates each of the hands 37 by lifting and rotating the forward and backward drive unit 38. That is, as shown in Figure 5, the lifting and rotating drive unit 39 can move the forward and backward drive unit 38 in the vertical direction (z direction) and can also rotate the forward and backward drive unit 38 around the vertical axis AX1. The forward and backward drive unit 38 and the lifting and rotating drive unit 39 are each equipped with, for example, an electric motor. The two substrate transport mechanisms TR1 and TR2 are fixed to the floor of the indexer block 31 so that they cannot move in the horizontal direction. Alternatively, the two substrate transport mechanisms TR1 and TR2 may each be provided to be movable in the horizontal direction. Also, one of the two substrate transport mechanisms TR1 and TR2 may be omitted.

[0075] A substrate mounting section PS1 is provided between the indexer block 31 and the upper processing layer 32A of the processing block 32. A substrate mounting section PS2 is provided between the indexer block 31 and the lower processing layer 32B of the processing block 32. Each of the substrate mounting sections PS1 and PS2 is configured to accommodate one or more wafers W.

[0076] The substrate mounting sections PS1 to PS2 are configured to accommodate the temperature measurement wafer 1. When the substrate mounting section is configured to accommodate multiple wafers W, the substrate mounting sections PS1 to PS2 include multiple mounting members arranged vertically. In this case, due to the size of the gap between two mounting members, the temperature measurement wafer 1 may be configured to be placed on the uppermost mounting member. Alternatively, the temperature measurement wafer 1 may be placed on a level other than the uppermost one.

[0077] The substrate transport mechanism TR1 transports the wafer W from the carrier C placed on the opener 33 to one of the two substrate mounting sections PS1 and PS2. The substrate transport mechanism TR2 transports the wafer W from the carrier C placed on the opener 34 to one of the two substrate mounting sections PS1 and PS2. Note that there may be two or more openers 33 and 34 in the vertical direction. In this case, for example, the substrate transport mechanism TR1 can retrieve the wafer W from the carrier C placed on two or more openers 33 arranged in the vertical direction.

[0078] The processing block 32 comprises a coating unit 41, a transport space 42, and a heat treatment block 97. In Example 1, the processing block 32 has a configuration in which two processing layers having the same configuration are stacked. That is, as shown in Figure 5, the processing block 32 has a configuration in which an upper processing layer 32A and a lower processing layer 32B are stacked vertically.

[0079] The coating unit 41 performs a coating process by applying a processing liquid to the wafer W. Examples of processing liquids include photoresist liquid or liquid for forming an anti-reflective film. One coating unit 41 is provided in each of the processing layers 32A and 32B. Of the two coating units 41, the one provided in processing layer 32A is referred to as coating unit 41A, and the one provided in processing layer 32B is referred to as coating unit 41B to distinguish between the two. Each of the coating units 41A and 41B is equipped with a series of mechanisms used in the coating process, such as a nozzle for applying the processing liquid to the wafer W and a spin chuck for holding the wafer W.

[0080] The transport space 42 is a rectangular space that extends linearly in the left-right direction (x-direction) in a plan view. The coating unit 41 and the heat treatment unit 43 are arranged so as to sandwich the transport space 42 from front to back. That is, the coating unit 41 is located on the front side of the transport space 42, and the heat treatment unit 43 is located on the back side (rear side) of the transport space 42.

[0081] One transport space 42 is provided in each of the processing layers 32A and 32B. Of the two transport spaces 42, the one provided in processing layer 32A will be referred to as transport space 42A, and the one provided in processing layer 32B will be referred to as transport space 42B to distinguish between the two.

[0082] Each of the transport spaces 42A and 42B is equipped with a standby unit 45, a receiving unit 46, and a substrate transport mechanism TR3. Details of the standby unit 45 and the receiving unit 46 will be described later.

[0083] Figure 6(a) is a side view of the substrate transport mechanism TR3. Figure 6(b) is a top view of the substrate transport mechanism TR3. The substrate transport mechanism TR3 transports wafers W or temperature measurement wafers 1 in each of the transport spaces 42A and 42B. That is, the substrate transport mechanism TR3 can load and unload wafers W into and out of the coating unit 41. The substrate transport mechanism TR3 can also load and unload wafers W into and out of the heat treatment unit 43. The substrate transport mechanism TR3 can also load and unload wafers W into and out of the standby unit 45.

[0084] The substrate transport mechanism TR3 comprises two hands 47, a forward / backward drive unit 48, and a rotation drive unit 49. The substrate transport mechanism TR3 further comprises a first movement mechanism 51 and a second movement mechanism 52. Of the two hands 47, one is referred to as hand 47A and the other as hand 47B to distinguish them.

[0085] Each of the hands 47A and 47B holds a wafer W. Each of the two hands 47A and 47B has one base portion 50 and two tip portions 93 that branch off from the base portion 50. Three protrusions 95 are provided on the inside of the base portion 50 and the two tip portions 93. The wafer W is placed on the three protrusions 95. Each of the three protrusions 95 has a suction portion 96. The suction portion 96 is connected to an intake system (not shown). Note that the two hands 47A and 47B are not limited to the shape shown in Figure 6(b).

[0086] The two hands 47A and 47B are individually movable horizontally. The forward / backward drive unit 48 supports the hands 47A and 47B so that they can move, and moves each of the hands 47A and 47B forward and backward. To drive one hand 47A, the forward / backward drive unit 48 includes, for example, an electric motor, a linear screw shaft, a movable member having a hole that engages with the screw shaft, and a guide part that guides the movable member. The rotary drive unit 49 rotates the forward / backward drive unit 48 around the vertical axis AX2. This allows the orientation of the two hands 47A and 47B to be changed. The rotary drive unit 49 includes an electric motor.

[0087] The first moving mechanism 51 moves the rotary drive unit 49 in the x-direction. This allows the two hands 47A, 47B and the forward / backward drive unit 48 to move in the x-direction. The second moving mechanism 52 moves the rotary drive unit 49 in the vertical direction (z-direction). This allows the two hands 47A, 47B and the forward / backward drive unit 48 to move in the z-direction. In other words, each of the first moving mechanism 51 and the second moving mechanism 52 can move the two hands 47A, 47B and the forward / backward drive unit 48 in the xz direction. Each of the first moving mechanism 51 and the second moving mechanism 52 is equipped with an electric motor. Each of the first moving mechanism 51 and the second moving mechanism 52 may be mounted on the floor.

[0088] The heat treatment block 97 has heat treatment units 43 stacked in multiple layers and arranged in parallel in the x direction. Each of the heat treatment units 43 performs heat treatment on the wafer W. Figure 7 is a diagram showing the arrangement of the heat treatment units 43 in the processing block 32. Figure 7 corresponds to the cross-sectional view taken along arrow bb in Figure 4. Each of the processing layers 32A and 32B of the processing block 32 has one heat treatment block 97. Of the two heat treatment blocks 97 in the processing block 32, the one located in the upper processing layer 32A is referred to as heat treatment block 97A, and the one located in the lower processing layer 32B is referred to as heat treatment block 97B to distinguish between the two.

[0089] In each of the two heat treatment blocks 97A and 97B, the heat treatment units 43 are configured to be arranged in a 3x5 grid. As shown in Figures 4 and 5, the heat treatment units 43 located in the left column are designated as heat treatment unit 43A, the heat treatment units 43 located in the middle column are designated as heat treatment unit 43B, and the heat treatment units 43 located in the right column are designated as heat treatment unit 43C to distinguish them from the other columns.

[0090] <Configuration of the heat treatment unit> The configuration of the heat treatment unit 43 will now be described using Figures 8 and 9. Figure 8 is a longitudinal cross-sectional view of the heat treatment unit 43 in a right side view. Figure 9 is a plan view of the heat treatment unit 43. Each component of the heat treatment unit 43 includes a cooling plate 53, a heating plate 54, a first support pin 55, a first pin lifting mechanism 56, a second support pin 57, a second pin lifting mechanism 58, and a local transport mechanism 59. These are located inside the casing 60.

[0091] The cooling plate 53 cools the wafer W on which it is placed. The cooling plate 53 is plate-shaped and made of, for example, metal or ceramic. The cooling plate 53 is provided with a circulation channel (not shown) inside which cooling water adjusted to a predetermined temperature (for example, 23°C) circulates. Cooling water is circulated through the circulation channel inside the cooling plate 53 by an external pump. The cooling plate 53 may also incorporate a Peltier element as a cooling mechanism.

[0092] The cooling plate 53 is provided with three holes 61 in the vertical direction (z-direction). A rod-shaped first support pin 55 is passed through each of the three holes 61. That is, the three first support pins 55 are provided so as to penetrate the cooling plate 53. The lower ends of the three first support pins 55 are fixed to the lifting member 63. The first pin lifting mechanism 56 raises and lowers the three first support pins 55 fixed to the lifting member 63 by raising and lowering the lifting member 63. The first pin lifting mechanism 56 and the second pin lifting mechanism 58, which will be described later, are each composed of actuators driven by an electric motor or air.

[0093] For example, the wafer W comes into contact with the cooling plate 53 via a transport arm 65, which will be described later. That is, the wafer W is cooled indirectly. In this regard, the wafer W may also be configured to be placed directly on the cooling plate 53. Alternatively, the transport arm 65 may have a cooling function similar to that of the cooling plate 53. In this case, the cooling plate 53 may not be provided.

[0094] The heating plate 54 heats the wafer W on which it is placed to a predetermined temperature. The heating plate 54 is arranged horizontally (y-direction) relative to the cooling plate 53. The heating plate 54 is plate-shaped and made of metal or ceramic. The heating plate 54 is equipped with a heater (e.g., an electric heater).

[0095] The heating plate 54 is provided with three vertical holes 66. A rod-shaped second support pin 57 is passed through each of the three holes 66. That is, the three second support pins 57 are provided so as to penetrate the heating plate 54. The lower ends of the three second support pins 57 are fixed to the lifting member 67. The second pin lifting mechanism 58 raises and lowers the three second support pins 57 fixed to the lifting member 67 by raising and lowering the lifting member 67.

[0096] The heating plate 54 is provided with a cover 68 to cover the wafer W on its upper surface 54A. A cover lifting mechanism 69 is connected to the cover 68 and moves the cover 68 up and down. The cover lifting mechanism 69 is composed of an actuator driven by an electric motor or air. In Figure 4, a ring-shaped exhaust port 71 is provided on the upper surface 54A of the heating plate 54 so as to surround the wafer W on which it is placed. When the cover 68 is in the lower position covering the wafer W, the exhaust port 71 can exhaust gas from the processing space SP.

[0097] Refer to Figure 9. The local transport mechanism 59 transports the temperature measurement wafer 1 between the cooling plate 53 and the heating plate 54 inside the heat treatment unit 43. The local transport mechanism 59 includes a transport arm 65 and an arm drive mechanism 73.

[0098] The transport arm 65 is a flat plate-shaped member made of a material with good heat conductivity (e.g., aluminum). Three proximity balls 74 are provided on the upper surface of the transport arm 65. The three proximity balls 74 protrude upward from the upper surface. Therefore, when a wafer W is placed on the upper surface of the transport arm 65, the three proximity balls 74 create a small gap between the lower surface of the wafer W and the upper surface of the transport arm 65. Two slits 75 are formed in the transport arm 65. The two slits 75 are formed on the heating plate 54 side of the transport arm 65 and extend parallel to each other in the front-rear direction (y-direction). For example, three first support pins 55 in a raised state are positioned to fit into the two slits 75.

[0099] The arm drive mechanism 73 can move the transport arm 65 linearly between above the cooling plate 53 and above the heating plate 54. The arm drive mechanism 73 comprises a horizontal movement section 73H and a vertical movement section 73V. The horizontal movement section 73H moves the transport arm 65 in the horizontal direction (y direction). The horizontal movement section 73H comprises, for example, an electric motor, a guide rail, and a timing belt. The vertical movement section 73V moves the transport arm 65 in the vertical direction (z direction). The vertical movement section 73V comprises, for example, an electric motor or an air cylinder.

[0100] As shown in Figure 8, the casing 60 is provided with an inlet / outlet 60A. The substrate transport mechanism TR3 loads and unloads wafers W by inserting at least one of the two hands 47A and 47B from the inlet / outlet 60A. As shown in Figure 8, exhaust is performed inside the casing 60. The substrate transport mechanism TR3 is also configured to load and unload temperature measurement wafers 1 by inserting at least one of the two hands 47A and 47B from the inlet / outlet 60A. In Embodiment 1, the temperature measurement wafers 1 are transported between the heating plate 54 and the standby unit 45 by using the substrate transport mechanism TR3 and the local transport mechanism 59. In Embodiment 1, the substrate transport mechanism TR3 and the local transport mechanism 59 correspond to the transport unit in the present invention.

[0101] <Configuration of the standby unit> Next, the configuration of the standby unit 45 will be described. Figure 10(a) is a side view of the standby unit 45. Figure 10(b) is a top view of the standby unit 45. The standby unit 45 is used as a station to keep the temperature measurement wafer 1 on standby inside the substrate processing apparatus 30. In Figures 10(a) and 10(b), the temperature measurement wafer 1 in standby mode on the standby unit 45 is indicated by a dashed line.

[0102] In Embodiment 1, the standby unit 45 is located in the transport space 42. As an example, the standby unit 45 is located at the right end of the transport space 42, as shown in Figures 4 and 5. The standby unit 45 comprises a holding and rotating section 76, a base section 77, a notch detection section 78, a centering mechanism 79, and a power supply unit 80.

[0103] The holding and rotating section 76 comprises a spin chuck 81 and a rotation drive section 83. The spin chuck 81 holds the back surface of the temperature measuring wafer 1, for example, by vacuum suction. The spin chuck 81 may also hold the edge of the temperature measuring wafer 1 with three or more holding pins (not shown). The rotation drive section 83 rotates the spin chuck 81 around the vertical axis AX3. The rotation drive section 83 is equipped with an electric motor (for example, a stepping motor). The holding and rotating section 76 corresponds to the rotation mechanism in the present invention.

[0104] The base portion 77 is plate-shaped and is made of, for example, metal or ceramic. The base portion 77 holds the lower side of the holding and rotating portion 76. In Embodiment 1, one end of the base portion 77 is connected to the second moving mechanism 52 (see Figure 5). That is, the base portion 77 moves in the z direction independently of the substrate transport mechanism TR3 by the second moving mechanism 52. As the base portion 77 moves in the z direction, the standby unit 45 can move in the z direction independently of the substrate transport mechanism TR3. As the standby unit 45 moves in the z direction independently of the substrate transport mechanism TR3, interference between the substrate transport mechanism TR3, which is transporting wafers W etc. to the heat treatment unit 43 (particularly the heat treatment unit 43C), and the standby unit 45 can be avoided.

[0105] The notch detection unit 78 is composed of, for example, a transmissive or reflective optical sensor. The notch detection unit 78 detects the presence or absence of a notch 10 provided on the temperature measuring wafer 1. In Figure 10(a), the notch detection unit 78 performs the detection operation at the left edge of the temperature measuring wafer 1. The detection position by the notch detection unit 78 can be any position on the outer edge of the temperature measuring wafer 1. The notch detection unit 78 is configured to move above the temperature measuring wafer 1 along the outer edge of the temperature measuring wafer 1. By moving the notch detection unit 78 to an appropriate position and detecting the presence or absence of the notch 10, the orientation of the temperature measuring wafer 1 can be adjusted as appropriate so that the notch 10 on the temperature measuring wafer 1 is located in an appropriate direction relative to the center of the temperature measuring wafer 1.

[0106] The centering mechanism 79 aligns the vertical axis AX3, which is the rotation center of the holding and rotating part 76, with the center of the temperature measuring wafer 1. As shown in Figure 12(b), the centering mechanism 79 may include, for example, two members 79A and 79B for clamping the temperature measuring wafer 1 from two horizontal directions. Each of the members 79A and 79B is driven, for example, by an electric motor.

[0107] The power supply unit 80 supplies power to the temperature measuring wafer 1, which is waiting in the standby unit 45. The power supply unit 80 wirelessly supplies power to the power receiving unit 13 of the temperature measuring wafer 1. In other words, the power supply unit 80 and the power receiving unit 13 enable charging of the all-solid-state secondary battery 21 while the temperature measuring wafer 1 is waiting in the standby unit 45. The power supply unit 80 is embedded in the spin chuck 81 as an example. The location of the power supply unit 80 is not limited to this, and it may be placed outside the holding and rotating unit 76. A disc-shaped wireless charger or the like can be used as the power supply unit 80. As the wireless power supply method, an electromagnetic induction method, an electric field coupling method, or an electromagnetic wave method may be used as appropriate.

[0108] The receiving unit 46 receives information transmitted wirelessly from the transmitting unit 8 of the temperature measuring wafer 1. The receiving unit 46 is positioned, for example, on the ceiling of the transport space 42A and the ceiling of the transport space 42B. In Embodiment 1, the receiving unit 46 is positioned in the center of the ceiling of the transport space 42 in the x-direction. That is, as shown in Figure 4, the receiving unit 46 is positioned on the front side (bottom side in Figure 4) of the heat treatment unit 43B in a plan view.

[0109] As shown in Figure 3, the substrate processing apparatus 30 further includes a control unit 85, an operation unit 87, a storage unit 89, and a notification unit 91.

[0110] The control unit 85 includes information processing means such as a central processing unit (CPU). The control unit 85 comprehensively controls the operation of each part that constitutes the substrate processing apparatus 30. The control unit 85 includes a temperature control unit 86 and a cooling control unit 88. The temperature control unit 86 controls the operation of the heater disposed on the heating plate 54. By controlling the operation of the heater, the temperature of the heating plate 54 is adjusted. The temperature control unit 86 adjusts the temperature of the heating plate 54 based on the temperature data of the heating plate 54 transmitted from the transmission unit 8. The cooling control unit 88 controls each component of the substrate processing apparatus 1 so as to cool the temperature measuring wafer 1 when the temperature of the battery unit 7 exceeds the operating threshold F2. The cooling control unit 88 also controls each component of the substrate processing apparatus 1 so as to cool the temperature measuring wafer 1 when the temperature of the passive substrate 9 exceeds the operating threshold F2. As an example, the cooling control unit 88 controls the operation of the cooling plate 53 and the substrate transport mechanism TR3.

[0111] The operation unit 87 includes a display unit for displaying various information and an input unit for receiving input operations. An example of the display unit is a liquid crystal monitor. An example of the input unit is a keyboard, mouse, touch panel, various buttons, or a combination thereof. Information of input operations received by the operation unit 87 is transmitted to the control unit 85. The control unit 85 is configured to be able to comprehensively control the operation of each part constituting the substrate processing apparatus 30 in response to the input operations received by the operation unit 87.

[0112] The storage unit 89 includes, for example, at least one of ROM (Read-Only Memory), RAM (Random-Access Memory), and a hard disk. The storage unit 89 stores various conditions for the heating and cooling processes, operation programs necessary for controlling the substrate processing apparatus 30, and operation programs necessary for controlling the temperature measuring wafer 1, etc.

[0113] Furthermore, the memory unit 89 has pre-stored information on a predetermined value F1, an operating threshold F2, and an ideal temperature F3. The predetermined value F1 is a threshold related to the remaining power of the temperature measuring wafer 1. As will be described later, when the remaining power in the all-solid-state secondary battery 21 of the temperature measuring wafer 1 falls below the predetermined value F1, the control unit 85 controls each part of the substrate processing apparatus 30 to transport the temperature measuring wafer 1 to the standby unit 45 for charging.

[0114] The operating threshold F2 is a threshold value related to the temperature of the temperature measurement wafer 1. As will be described later, if the temperature of at least one of the battery substrate 7 and the power receiving substrate 9 exceeds the operating threshold F2, the control unit 85 controls each part of the substrate processing apparatus 30 to prevent the temperature of the temperature measurement wafer 1 from rising.

[0115] The ideal temperature F3 is information regarding the ideal temperature of the heating plate 54. The control unit 85 adjusts the temperature of the heating plate 54 to the ideal temperature F3 based on the actual temperature data of the heating plate 54 obtained by the temperature measuring wafer 1.

[0116] The notification unit 91 notifies the user that the temperature of the battery board 7 or the power receiving board 9 is above the operating threshold F2 by using sound, light, text, etc. Examples of the notification unit 91 include an alarm device that generates an alarm sound, or a display unit of the operation unit 87 that displays text information.

[0117] <Overview of substrate processing method> The following is an overview of the processing steps for wafer W performed using the substrate processing apparatus 30. First, the wafer W is transported from the indexer block 31 to the processing block 32. That is, in the indexer block 31, the substrate transport mechanism TR1 unloads the wafer W from the carrier C placed on the opener 33. The substrate transport mechanism TR1 then places the wafer W unloaded from the carrier C onto the substrate mounting section PS1 (or substrate mounting section PS2).

[0118] Next, the substrate transport mechanism TR3 transports the wafer W, which is placed on the substrate mounting section PS1 (or substrate mounting section PS2), to the coating unit 41 of the processing block 32. A coating process is performed on the wafer W transported to the coating unit 41, in which a processing liquid, such as a photoresist liquid, is applied. After the coating process is completed, the substrate transport mechanism TR3 transports the coated wafer W to the heat treatment unit 43. The wafer W transported to the heat treatment unit 43 is placed on a cooling plate 53 for cooling, and then placed on a heating plate 54 for heating.

[0119] After the cooling and heating processes, i.e., the heat treatment, are completed, the substrate transport mechanism TR3 removes the wafer W from the heat treatment unit 43 and places it on the substrate mounting section PS1 (or substrate mounting section PS2). The substrate transport mechanism TR2 then loads the wafer W onto the carrier C, which is mounted on the opener 34. With the coating and heat treatments completed in this manner, the processing steps for the wafer W are finished.

[0120] When performing heat treatment on a wafer W, it is required that the temperature of the heating plate 54 be strictly uniform throughout. Therefore, during startup of the substrate processing apparatus 30 and during periodic maintenance of the substrate processing apparatus 30, the temperature of each heating plate 54 is measured using the temperature measurement wafer 1. Then, the temperature of the heating plate 54 is adjusted according to the temperature data measured by the temperature measurement wafer 1.

[0121] <Temperature measurement method using a temperature-measuring wafer> Here, we will describe the process of measuring temperature using the temperature measuring wafer 1 in the substrate processing unit 100 according to Example 1. Figure 11 is a flowchart illustrating the series of steps for measuring temperature using the temperature measuring wafer 1.

[0122] Step S1 (Transfer to the substrate processing unit) When the temperature measurement process begins, the temperature measurement wafer 1 is first brought into the substrate processing apparatus 30. The process of bringing the temperature measurement wafer 1 into the substrate processing apparatus 30 is the same as the process of bringing the wafer W into the substrate processing apparatus 30. That is, the temperature measurement wafer 1 is placed in the carrier C and placed on the mounting table 35. The substrate transport mechanism TR1 unloads the temperature measurement wafer 1 from the carrier C and brings it into the indexer block 31 through the opening 91. Note that the process of bringing the temperature measurement wafer 1 from outside the substrate processing apparatus 30 into the indexer block 31 may be performed using the substrate transport mechanism TR2.

[0123] Step S2 (Transfer to heat treatment unit) When the temperature measurement wafer 1 is loaded into the indexer block 31, the process of transporting the temperature measurement wafer 1 to the heat treatment unit 43 is performed. Here, of the three rows of heat treatment units 43A to 43C arranged in the x direction, the temperature measurement of heat treatment unit 43A is performed first.

[0124] When measuring the temperature of the heat treatment unit 43 located in the upper processing block 32A, the substrate transport mechanism TR1 places the temperature measurement wafer 1 on the substrate mounting section PS1. The substrate transport mechanism TR3, located in the transport space 42A of the processing block 32A, holds the wafer body 2 of the temperature measurement wafer 1 placed on the substrate mounting section PS1 with its hand 47. Then, as shown in Figure 12, the substrate transport mechanism TR3 transports the temperature measurement wafer 1 from the substrate mounting section PS1 to the heat treatment unit 43. Figure 12 shows the state in which the temperature measurement wafer 1 has been transported from the substrate mounting section PS1 to the input / output port 60A of the heat treatment unit 43. Note that in plan views such as Figure 12, the configuration of the temperature measurement wafer 1, excluding the notch 10 and the measurement substrate 5, is omitted from the description.

[0125] When measuring the temperature of the heat treatment unit 43 located in the lower processing block 32B, the substrate transport mechanism TR1 places the temperature measurement wafer 1 on the substrate mounting section PS2. The substrate transport mechanism TR3, located in the transport space 42B of the processing block 32B, holds the wafer body 2 of the temperature measurement wafer 1 placed on the substrate mounting section PS1 with its hand 47 and transports it to the heat treatment unit 43.

[0126] Step S3 (Temperature Measurement) After transporting the temperature measurement wafer 1 to the heat treatment unit 43, the temperature measurement wafer 1 is placed on the heating plate 54, and the temperature of the heating plate 54 is measured. Figures 13(a) to 13(c) and 14(a) to 14(c) illustrate the operation of measuring the temperature of the heating plate 54 in a predetermined heat treatment unit 43. The substrate transport mechanism TR3 is assumed to be holding the temperature measurement wafer 1 with its lower hand 47B. Also, for the sake of clarity, the temperature sensor 3 and measurement substrate 5 on the temperature measurement wafer 1 are omitted in Figure 13(a) and other figures.

[0127] Refer to Figure 13(a). The substrate transport mechanism TR3 is assumed to be holding the temperature measurement wafer 1 with its lower hand 47B. While holding the temperature measurement wafer 1, the substrate transport mechanism TR3 transports the temperature measurement wafer 1 into the internal space of the heat treatment unit 43 via the loading / unloading port 60A of the casing 60.

[0128] Refer to Figure 13(b). The substrate transport mechanism TR3 moves the lower hand 47B that holds the temperature measuring wafer 1 above the cooling plate 53. Then, it transfers the temperature measuring wafer 1 onto the three first support pins 55 that are provided so as to penetrate the cooling plate 53. That is, the first pin lifting mechanism 56 (see Figure 8) raises the three first support pins 55, thereby placing the temperature measuring wafer 1 on the three first support pins 55. Note that in Figure 13(b), the transport arm 65 of the local transport mechanism 59 is in contact with the cooling plate 53.

[0129] Refer to Figure 13(c). After transferring the temperature measurement wafer 1 onto the three first support pins 55, the lower hand 47B is retracted (retracted) from above the cooling plate 53. After the lower hand 47B has retracted, the local transport mechanism 59 raises the transport arm 65 so that it is away from the cooling plate 53.

[0130] Refer to Figure 14(a). By raising the transport arm 65, the temperature measuring wafer 1 is placed on the transport arm 65. Subsequently, the first pin lifting mechanism 56 (see Figure 8) lowers the three first support pins 55. As a result, the temperature measuring wafer 1, which was placed on the three first support pins 55, is transferred to the transport arm 65 of the local transport mechanism 59. The transport arm 65 of the local transport mechanism 59 is movable between above the cooling plate 53 and above the heating plate 54.

[0131] Refer to Figure 14(b). Subsequently, the local transport mechanism 59 moves the transport arm 65, which holds the temperature measuring wafer 1, from above the cooling plate 53 to above the heating plate 54. After moving the transport arm 65 above the heating plate 54, the temperature measuring wafer 1 is transferred onto the three second support pins 57 that are provided to penetrate the heating plate 54. That is, the second pin lifting mechanism 58 (see Figure 8) raises the three second support pins 57, thereby placing the temperature measuring wafer 1 on the three second support pins 57.

[0132] Refer to Figure 14(c). After the temperature-measuring wafer 1 is placed on the three second support pins 57, the local transport mechanism 59 first moves the transport arm 65 from above the heating plate 54 to above the cooling plate 53, and then lowers the transport arm 65 to make contact with the cooling plate 53. Then, the second pin lifting mechanism 58 (see Figure 8) lowers the three second support pins 57. This places the temperature-measuring wafer 1 on the heating plate 54. After that, the cover lifting mechanism 69 (see Figure 8) may lower the cover 68 to the extent that the position of the temperature-measuring wafer 1 does not move. Figure 15 is a plan view showing the temperature-measuring wafer 1 placed on the heating plate 54 of the heat treatment unit 43A.

[0133] After the temperature measurement wafer 1 is placed on the heating plate 54, temperature measurement is performed on the heating plate 54. That is, the temperature of the heating plate 54, which is being heated under the control of the control unit 85, is measured by the temperature sensor 3 of the temperature measurement wafer 1. Each of the multiple temperature sensors 3 shown in Figure 1(a) detects the temperature of the heating plate 54. The signal from each of the multiple temperature sensors 3 is sent to the A / D converter 6 provided on the measurement board 5. The A / D converter 6 converts the signals sent from the temperature sensors 3 into temperature data. The multiple temperature sensors 3 are evenly distributed across the entire surface of the temperature measurement wafer 1. Therefore, temperature data is acquired at multiple locations across the entire surface of the heating plate 54.

[0134] Step S4 (Sending temperature data) When temperature data of the heating plate 54 is acquired by temperature measurement, this temperature data is transmitted to the outside of the temperature measurement wafer 1. That is, the temperature data acquired by the digital conversion of the A / D converter 6 is sent to the transmission unit 8 of the measurement substrate 5. The transmission unit 8 transmits the temperature data of the heating plate 54 to the receiving unit 46 of the substrate processing device 30 in real time.

[0135] As shown in Figure 15, when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43A, the orientation of the temperature measurement wafer 1 in the horizontal direction is predetermined so that the measurement substrate 5 of the temperature measurement wafer 1 faces the receiving unit 46. Note that "the measurement substrate 5 is facing the receiving unit 46" means "the orientation of the temperature measurement wafer 1 around the z-axis is determined so that the distance between the measurement substrate 5 and the receiving unit 46 is minimized." In other words, the orientation of the measurement substrate 5 at the time the substrate transport mechanism TR3 holds the temperature measurement wafer 1 is determined so that the distance T1 between the measurement substrate 5 and the receiving unit 46 is minimized when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43A (see Figure 15).

[0136] By placing the temperature measuring wafer 1 on the heating plate 54 so that the measurement substrate 5 faces the receiving unit 46, the temperature data transmitted from the transmitting unit 8 of the temperature measuring wafer 1 is transmitted to the receiving unit 46 of the substrate processing device 30 with greater accuracy. In other words, by shortening the distance between the measurement substrate 5 and the receiving unit 46, the accuracy of wireless communication between the temperature measuring wafer 1 and the substrate processing device 30 can be improved.

[0137] Step S5 (Adjusting the heating plate temperature) When temperature data is transmitted from the temperature measurement wafer 1 to the substrate processing apparatus 30, the substrate processing apparatus 30 adjusts the temperature of the heating plate 54 based on the acquired temperature data. The temperature data received by the receiving unit 46 is transmitted to the control unit 85 of the substrate processing apparatus 30. The control unit 85 compares the actual temperature data of the heating plate 54 obtained by the temperature measurement wafer 1 with the information of the ideal temperature F3 stored in the storage unit 89. Then, the temperature control unit 86 of the control unit 85 controls the operation of the heater installed on the heating plate 54 so that the temperature of the heating plate 54 becomes the ideal temperature F3.

[0138] The heater's operation is controlled in real time, allowing the temperature of the heating plate 54 to be quickly reset. The temperature-measuring wafer 1, which is placed on the heating plate 54, measures the reset temperature of the heating plate 54 again and acquires temperature data. The reset temperature data is transmitted wirelessly from the transmitting unit 8 to the receiving unit 46, and then sent to the control unit 85. In this way, with the temperature-measuring wafer 1 placed on the heating plate 54, the operation of measuring the temperature of the heating plate 54 and the operation of resetting the temperature of the heating plate 54 are repeated in real time, allowing the temperature of the heating plate 54 to be quickly adjusted to the ideal temperature F3.

[0139] The temperature measurement wafer 1 is configured to transmit temperature data from the heating plate 54 to an external source wirelessly. The temperature measurement wafer 1 is configured to transmit temperature data while it is placed on the heating plate 54, which is the object of measurement. As a result, the control unit 85 of the substrate processing apparatus 30 can acquire temperature data from the heating plate 54 in real time and can repeatedly measure and reset the temperature of the heating plate 54 in real time. Consequently, the temperature of the heating plate 54 can be adjusted to the ideal temperature F3 quickly and accurately.

[0140] By the time of step S5, the process of measuring and adjusting the temperature of the heating plate 54 for one heat treatment unit 43 is completed. After the completion of step S5, the subsequent process branches according to the state of the temperature measurement wafer 1, depending on the selection of steps Q1 to Q4 shown in Figure 11.

[0141] In step Q1, the selection branches depending on whether or not to change the orientation of the measurement substrate 5 on the temperature measurement wafer 1. For example, schedule data regarding the order in which the temperature measurement wafer 1 measures multiple heat treatment units 43 can be stored in the storage unit 89, and the control unit 85 can make a decision using this schedule data to make the selection in step Q1.

[0142] Next, if the heat treatment unit 43 to be measured on the temperature measurement wafer 1 is in the same row as the heat treatment unit 43 that was most recently measured, the positional relationship between the measurement substrate 5 and the receiving unit 46 in a plan view does not change, so there is no need to change the orientation of the measurement substrate 5. In this case, the selection for step Q1 is "No". As a specific example, if the temperature of a heat treatment unit 43A located in the top row of the left column is measured, and then the temperature of a heat treatment unit 43A located in the second row from the top of the left column is measured, the selection for step Q1 is "No".

[0143] On the other hand, if the next heat treatment unit 43 to be measured on the temperature measurement wafer 1 is in a different column from the heat treatment unit 43 that was most recently measured, the positional relationship between the measurement substrate 5 and the receiving unit 46 in a plan view changes, so it is preferable to change the orientation of the measurement substrate 5. In this case, the selection of step Q1 is "Yes". As a specific example, if the temperature of heat treatment unit 43A located in the left column is measured, and then the temperature of heat treatment unit 43B located in the center column is measured, the selection of step Q1 is "Yes".

[0144] In step Q2, the selection is branched based on the remaining power of the all-solid-state secondary battery 21 on the temperature measurement wafer 1. For example, information indicating the remaining power of the all-solid-state secondary battery 21 is transmitted from the battery board 7 to the transmission unit 8 of the measurement board 5, and then the transmission unit 8 wirelessly communicates the remaining power data to the receiving unit 46 and then transmits the data to the control unit 85. The control unit 85 then compares the remaining power data of the all-solid-state secondary battery 21 with a predetermined value F1 stored in the storage unit 89 to make the selection in step Q2.

[0145] If the remaining power of the all-solid-state secondary battery 21 is greater than a predetermined value F1, it is determined that it is possible to move to the next heat treatment unit 43 and continue the operation of measuring the temperature of the heating plate 54. In this case, the selection of step Q1 is "No". On the other hand, if the remaining power of the all-solid-state secondary battery 21 is less than or equal to the predetermined value F1, it is determined that if the operation of moving to the next heat treatment unit 43 and continuing the operation of measuring the temperature of the heating plate 54 may stop due to insufficient power from the all-solid-state secondary battery 21, making temperature measurement impossible. In this case, the selection of step Q2 is "Yes".

[0146] In step Q3, the selection is branched based on the temperatures of the battery substrate 7 and the power receiving substrate 9 on the temperature measurement wafer 1. The temperature of the battery substrate 7 is measured by the battery temperature detection unit 11 at appropriate intervals. The temperature of the power receiving substrate 9 is measured by the substrate temperature detection unit 14 at appropriate intervals. The temperature data of the battery substrate 7 is transmitted from the battery temperature detection unit 11 to the transmission unit 8 of the measurement substrate 5. The temperature data of the power receiving substrate 9 is transmitted from the substrate temperature detection unit 14 to the transmission unit 8 of the measurement substrate 5. The transmission unit 8 wirelessly transmits the temperature data of the battery substrate 7 and the temperature data of the power receiving substrate 9 to the receiving unit 46. The control unit 85 can make the selection in step Q3 by comparing this temperature data with the operating threshold F2 stored in the storage unit 89.

[0147] If the temperature of both the battery board 7 and the power receiving board 9 is below the operating threshold F2, it is determined that the temperatures of the battery board 7 and the power receiving board 9 are sufficiently low, and it is possible to move to the next heat treatment unit 43 and continue the operation of measuring the temperature of the heating plate 54. In this case, the selection in step Q3 is "No". On the other hand, if at least one of the temperatures of the battery board 7 and the power receiving board 9 is above the operating threshold F2, it is determined that the temperature of either the battery board 7 or the power receiving board 9 is excessively high, and if the operation of moving to the next heat treatment unit 43 and continuing the operation of measuring the temperature of the heating plate 54 is continued, it may cause the temperature measuring wafer 1 to stop operating due to the high temperature of either the battery board 7 or the power receiving board 9, making temperature measurement impossible. In this case, the selection in step Q3 is "Yes".

[0148] In step Q4, the selection is branched depending on whether the temperature measurement process using the temperature measurement wafer 1 has been completed for all of the heat treatment units 43 whose temperatures are scheduled to be measured. If there are any heat treatment units 43 for which the temperature measurement and temperature adjustment of the heating plate 54 have not been completed, the selection in step Q4 is "No". On the other hand, if the temperature measurement and temperature adjustment of the heating plate 54 have been completed for all of the heat treatment units 43, the selection in step Q4 is "Yes".

[0149] The following describes the operation of the temperature measurement wafer 1, which is performed according to the selection of steps Q1 to Q4.

[0150] (A) When performing temperature measurements on the following heat treatment unit First, let's explain the case where all selections in steps Q1 to Q4 are "No". If all selections in steps Q1 to Q4 are "No", the temperature measurement wafer 1 moves to the next heat treatment unit 43 to perform tasks such as temperature measurement. In other words, if all selections in steps Q1 to Q3 are "No", it is determined that the temperature measurement wafer 1 can continue operating in its current state. Then, because the selection in step Q4 is "No", it is determined that there is a heat treatment unit 43 that needs to perform tasks such as temperature measurement. Here, we will explain the case where the temperature measurement is continued by moving from the heat treatment unit 43A located at the top to the heat treatment unit 43A located at the second position from the top (see Figure 7).

[0151] If all selections in steps Q1 to Q4 are "No", the process returns to step S2 and steps S2 to S5 are repeated. That is, after the process of adjusting the temperature of the heating plate 54 in step S5 is completed, the temperature measurement wafer 1 is transported from the heat treatment unit 43A located at the top to the heat treatment unit 43A located at the second position from the top (step S2).

[0152] If the process of step S2 is to be performed again after step S5 is completed, the temperature measurement wafer 1 is first removed from the heat treatment unit 43. The operation of removing the temperature measurement wafer 1 from the heat treatment unit 43 is performed in the reverse order of the explanation in Figures 13(a) to 13(d) and Figures 14(a) to 14(b). After the substrate transport mechanism TR3 removes the temperature measurement wafer 1 from the uppermost heat treatment unit 43A, the substrate transport mechanism TR3 moves from the uppermost heat treatment unit 43A to the second-highest heat treatment unit 43A while holding the temperature measurement wafer 1. The second moving mechanism 52 lowers the substrate transport mechanism TR3 in the z direction, allowing the substrate transport mechanism TR3 to move to the second-highest heat treatment unit 43A from the top.

[0153] After the substrate transport mechanism TR3 is moved by the second moving mechanism 52, the temperature measurement wafer 1 is placed on the heating plate 54 located in the second heat treatment unit 43A from the top. The process of placing the temperature measurement wafer 1 on the heating plate 54 is as described using Figures 13(a) to 13(d) and Figures 14(a) to 14(b). After the temperature measurement wafer 1 is placed on the heating plate 54, the heating plate 54 located in the second heat treatment unit 43A from the top is subjected to temperature measurement, temperature data transmission, and temperature adjustment (steps S3 to S5).

[0154] After the process up to step S5 is completed for the second heat treatment unit 43A from the top, the process is branched again according to the selection of steps Q1 to Q4.

[0155] (B) When changing the orientation of the measurement board Next, we will explain the case where the selection for step Q1 is "Yes". If the selection for step Q1 is "Yes", after the process in step S5 is completed, steps S6 and S7 are performed. In this case, the selections for steps Q2 to Q4 are assumed to be "No".

[0156] For example, once steps S2 to S5 have been completed for the five heat treatment units 43A arranged in parallel in the z direction, it is then necessary to perform steps S2 to S5 on the heat treatment unit 43B located in the center in the x direction.

[0157] However, when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43B while maintaining the orientation of the measurement substrate 5, the positional relationship between the measurement substrate 5 and the receiving unit 46 in a plan view is as shown in Figure 16. In this case, the measurement substrate 5 is not facing the receiving unit 46, so the distance Tf between the measurement substrate 5 and the receiving unit 46 is large. Therefore, there is a concern that the accuracy of wireless communication from the transmitting unit 8 of the measurement substrate 5 to the receiving unit 46 will decrease.

[0158] Furthermore, since the measurement board 5 is not facing the receiving unit 46 (not opposite it), there may be instances where temperature sensors 3 or other sensors located on the temperature measurement wafer 1 are located between the measurement board 5 and the receiving unit 46. As a result, it is possible that temperature sensors 3 or other sensors may interfere with wireless communication between the measurement board 5 and the receiving unit 46. From the perspective of further improving the accuracy of wireless communication from the measurement board 5 to the receiving unit 46, when measuring the heating plate 54 of the heat treatment unit 43B, it is desirable that the positional relationship between the measurement board 5 and the receiving unit 46 in a plan view is as shown in Figure 17.

[0159] As shown in Figure 17, when the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43B, the measurement substrate 5 is positioned towards the front. Therefore, the distance T2 between the measurement substrate 5 and the receiving unit 46 is minimized, improving the accuracy of wireless communication. Thus, when moving to the heat treatment units 43, which are arranged in different rows in the x-direction, to measure the temperature of the heating plate 54, it is preferable to rotate the temperature measurement wafer 1 around the z-axis to change the orientation of the measurement substrate 5.

[0160] The following describes the steps S6 and S7, which are performed when the selection in step Q1 is "Yes".

[0161] Step S6 (Transport to standby unit) When step S6 is started after step S5 is completed, the substrate transport mechanism TR3 transports the temperature measurement wafer 1 from the heat treatment unit 43 to the standby unit 45. The operation of removing the temperature measurement wafer 1 from the heat treatment unit 43 is performed in the reverse order of the explanation in Figures 13(a) to 13(d) and Figures 14(a) to 14(b).

[0162] After the substrate transport mechanism TR3 has unloaded the temperature measurement wafer 1 from the uppermost heat treatment unit 43A, as shown in Figure 18, the substrate transport mechanism TR3 moves above the standby unit 45 while holding the temperature measurement wafer 1. In Embodiment 1, the substrate transport mechanism TR3 rotates 90° clockwise around the z-axis while holding the temperature measurement wafer 1. Then, by moving horizontally to the right in the x-direction, the substrate transport mechanism TR3 moves above the standby unit 45.

[0163] After the substrate transport mechanism TR3 moves above the standby unit 45, the temperature measuring wafer 1 is placed on the holding and rotating part 76 of the standby unit 45 by appropriately displacing at least one of the standby unit 45 and the substrate transport mechanism TR3 in the z direction (see Figure 10(a)). The centering mechanism 79 aligns the center position of the temperature measuring wafer 1 with the vertical axis AX3, which is the rotation center of the holding and rotating part 76, by having two members 79A and 79B sandwich the temperature measuring wafer 1 from the horizontal direction. After that, the two members 79A and 79B move away from the temperature measuring wafer 1. The spin chuck 81 of the holding and rotating part 76 enables the holding of the temperature measuring wafer 1 by vacuum suction. As shown in Figure 19, after the temperature measuring wafer 1 is placed and held on the spin chuck 81, the hand 47 of the substrate transport mechanism TR3 retracts from the standby unit 45. Step S6 is completed when the temperature measurement wafer 1 is placed and held on the spin chuck 81.

[0164] Step S7 (Wafer rotation adjustment) After transporting the temperature measurement wafer 1 to the standby unit 45 and holding it in the holding and rotating unit 76, the temperature measurement wafer 1 is rotated. That is, with the temperature measurement wafer 1 placed and held in the spin chuck 81, the control unit 85 rotates the holding and rotating unit 76 around the vertical axis AX3 (z-axis). The orientation of the measurement substrate 5 changes according to the direction and angle of rotation of the holding and rotating unit 76 around the vertical axis AX3.

[0165] Subsequently, while the temperature measuring wafer 1 is rotated by the holding and rotating unit 76, the notch detection unit 78 detects the position of the notch 10 on the temperature measuring wafer 1. This rotation is performed, for example, one or more times. Based on the detected position (angle) of the notch 10, the control unit 85 adjusts the angle of the temperature measuring wafer 1. That is, the control unit 85 adjusts the orientation of the measurement substrate 5 on the temperature measuring wafer 1, using the notch 10 of the temperature measuring wafer 1 as a reference.

[0166] The next object that the temperature measuring wafer 1 measures is the heating plate 54 located in the heat treatment unit 43B. Therefore, the control unit 85 adjusts the orientation of the measurement substrate 5 so that wireless communication between the measurement substrate 5 and the receiving unit 46 is optimized when the temperature measuring wafer 1 is placed on the heating plate 54 of the heat treatment unit 43B. In other words, the control unit 85 controls the rotation drive of the holding and rotating unit 76 so that the orientation of the measurement substrate 5 in a plan view is adjusted from the state shown in Figure 20(a) to the state shown in Figure 20(b). The temperature measuring wafer 1 shown in Figure 20(b) corresponds to the temperature measuring wafer 1 shown in Figure 17 rotated 90° clockwise. By rotating the temperature measuring wafer 1 and adjusting the orientation of the measurement substrate 5, the process of step S7 is completed.

[0167] After the process in step S7 is completed, the process returns to the branching of steps Q2 to Q4. Here, since all selections in steps Q2 to Q4 are "No", the process returns to step S2. That is, the process of transporting the temperature measurement wafer 1 from the standby unit 45 to the heat treatment unit 43B is started.

[0168] Here, we will describe the process of removing the temperature-measuring wafer 1 from the standby unit 45. First, the spin chuck 81 of the holding and rotating unit 76 releases the vacuum suction of the temperature-measuring wafer 1. Then, the substrate transport mechanism TR3 moves to the standby unit 45 and holds the temperature-measuring wafer 1 that is placed on the holding and rotating unit 76. As the substrate transport mechanism TR3 moves away from the holding and rotating unit 76 while holding the temperature-measuring wafer 1, the temperature-measuring wafer 1 is removed from the standby unit 45.

[0169] The process for transporting the temperature measurement wafer 1 from the standby unit 45 to the heat treatment unit 43 is as follows: The substrate transport mechanism TR3, while holding the temperature measurement wafer 1, rotates 90° counterclockwise around the z-axis. Then, the substrate transport mechanism TR3 moves horizontally in the x-direction to transport the temperature measurement wafer 1 to the designated input / output port 60A of the heat treatment unit 43. Figure 21 shows the state after the temperature measurement wafer 1 has been transported from the standby unit 45 to the input / output port 60A of the heat treatment unit 43B.

[0170] As shown in Figure 21, after transporting the temperature measurement wafer 1, the temperature measurement wafer 1 is brought into the heat treatment unit 43B via the input / output port 60A of the heat treatment unit 43B and placed on the heating plate 54. The process of bringing the temperature measurement wafer 1 into the heat treatment unit 43B and placing it on the heating plate 54 has already been explained using Figures 13(a) to 13(d) and Figures 14(a) to 14(b), so it will not be described here. In step S7, the temperature measurement wafer 1 is placed on the heating plate 54 of the heat treatment unit 43B with the rotation adjusted as appropriate. Therefore, the orientation of the measurement substrate 5 on the temperature measurement wafer 1 placed on the heating plate 54 of the heat treatment unit 43B is as shown in Figure 17.

[0171] After the process in step S2 is completed by placing the temperature measurement wafer 1 on the heating plate 54 of the heat treatment unit 43B, the temperature of the heating plate 54 of the heat treatment unit 43B is measured (step S3). The temperature data of the heating plate 54 is transmitted wirelessly from the transmitting unit 8 of the temperature measurement wafer 1 to the receiving unit 46 of the substrate processing apparatus 30, and then sent to the control unit 85 (step S4). Based on the received temperature data, the control unit 85 adjusts the temperature of the heating plate 54 of the heat treatment unit 43B (step S5).

[0172] After steps S2 to S5 are completed for the heating plate 54 of the heat treatment unit 43B, steps S2 to S5 are repeated for the other four heat treatment units 43B that are arranged in parallel in the z direction. For each of the five heat treatment units 43B, the optimal orientation of the measurement substrate 5 is the same when wireless communication is performed from the transmitting unit 8 to the receiving unit 46 on the heating plate 54. Therefore, there is no need to change the orientation of the temperature measurement wafer 1 while repeating steps S2 to S5 for the heating plates 54 of the five heat treatment units 43B.

[0173] However, once steps S2 to S5 are completed for the five heat treatment units 43B, the next step is to perform operations such as temperature measurement on the heating plate 54 of the heat treatment unit 43C. The positional relationship between the heat treatment unit B and the receiving unit 46 in a plan view is different from the positional relationship between the heat treatment unit 43C and the receiving unit 46. In other words, the orientation of the measurement board 5 suitable for wireless communication on the heating plate 54 of the heat treatment unit 43B is different from the orientation of the measurement board 5 suitable for wireless communication on the heating plate 54 of the heat treatment unit 43C.

[0174] Therefore, after performing steps S2 to S5 for the heat treatment unit 43B, it is preferable to perform steps S6 to S7 before performing steps S2 to S5 for the heat treatment unit 43C to adjust the orientation of the measurement substrate 5 to a direction suitable for the heat treatment unit 43C.

[0175] In other words, after performing steps S2 to S5 for all heat treatment units 43B, the temperature measurement wafer 1 is transported from the heat treatment unit 43B to the standby unit 45 (step S6). Then, with the temperature measurement wafer 1 held in the holding and rotating part 76 of the standby unit 45, the control unit 85 rotates the holding and rotating part 76 around the z-axis (step S7). By rotating the holding and rotating part 76 at an appropriate angle, the orientation of the measurement substrate 5 on the temperature measurement wafer 1 is adjusted to a direction suitable for the heat treatment unit 43C.

[0176] After the process in step S7 is completed, the process returns to step S2. That is, the process of transporting the temperature measurement wafer 1 from the standby unit 45 to the heat treatment unit 43C is started. The substrate transport mechanism TR3 holds the temperature measurement wafer 1 and transports it to the input / output port 60A of the heat treatment unit 43C. The temperature measurement wafer 1 is transported into the heat treatment unit 43C via the input / output port 60A and placed on the heating plate 54 of the heat treatment unit 43C (step S2).

[0177] Figure 22 shows a temperature-measuring wafer 1, whose orientation on the measurement substrate 5 is adjusted to a direction suitable for the heat treatment unit 43C, placed on the heating plate 54 of the heat treatment unit 43C. In this case, the distance T3 from the measurement substrate 5 to the receiving unit 46 is minimized. In the state shown in Figure 22, interference between the standby unit 45 and the substrate transport mechanism TR3 is avoided by raising or lowering the standby unit 45 in the z direction.

[0178] After the process in step S2 is completed by placing the temperature measurement wafer 1 on the heating plate 54 of the heat treatment unit 43C, the temperature of the heating plate 54 of the heat treatment unit 43C is measured (step S3). The temperature data of the heating plate 54 is transmitted wirelessly from the transmitting unit 8 of the temperature measurement wafer 1 to the receiving unit 46 of the substrate processing apparatus 30, and then sent to the control unit 85 (step S4). Based on the received temperature data, the control unit 85 adjusts the temperature of the heating plate 54 of the heat treatment unit 43C (step S5).

[0179] As described above, the substrate processing unit 100 according to Embodiment 1 is configured to appropriately adjust the orientation of the measurement substrate 5 on the temperature measuring wafer 1 by performing steps S6 and S7.

[0180] (C) When charging a wafer for temperature measurement Next, we will explain the case where the selection in step Q2 is "Yes". If the selection in step Q2 is "Yes", after the process in step S5 is completed, the processes in steps S8 and S9 are performed. In this case, the selections in steps Q1, Q3, and Q4 are all assumed to be "No".

[0181] While steps S2 to S5 are repeated for multiple heat treatment units 43, the power stored in the all-solid-state secondary battery 21 on the battery substrate 7 gradually decreases. In order to prevent the temperature measurement wafer 1 from becoming inoperable due to the depletion of the power stored in the all-solid-state secondary battery 21, a charging operation is required to supply power to the all-solid-state secondary battery 21 at predetermined timings.

[0182] In the substrate processing system 100 according to Embodiment 1, the standby unit 45, which is located inside the substrate processing apparatus 30, is configured to enable charging of the temperature measurement wafer 1. Specifically, steps S8 and S9 are performed as a trigger when the remaining power in the all-solid-state secondary battery 21 is less than or equal to a predetermined value F1, thereby charging the temperature measurement wafer 1.

[0183] The following describes the steps S8 and S9, which are performed when the selection in step Q2 is "Yes".

[0184] Step S8 (Transport to standby unit) A signal indicating the remaining power of the all-solid-state secondary battery 21 on the temperature-measuring wafer 1 is transmitted to the A / D converter 6 in real time. The A / D converter 6 then digitally converts this signal to obtain data indicating the remaining power of the all-solid-state secondary battery 21. The remaining power data is transmitted wirelessly from the transmission unit 8 to the receiving unit 46, and further sent to the control unit 85. The control unit 85 compares the remaining power data of the all-solid-state secondary battery 21 with a predetermined value F1 stored in the storage unit 89, and can quickly determine if the remaining power of the all-solid-state secondary battery 21 has been depleted to the predetermined value F1 or less.

[0185] If the remaining power of the all-solid-state secondary battery 21 is less than or equal to a predetermined value F1, the process of step S8 is started, and the temperature measurement wafer 1 is transported to the standby unit 45. The process of step S8 is the same as the process of step S6. That is, the substrate transport mechanism TR3 moves to the standby unit 45 while holding the temperature measurement wafer 1. Then, the spin chuck 81 of the holding and rotating part 76 holds the back side of the temperature measurement wafer 1 by suction, and the temperature measurement wafer 1 is placed and held on the holding and rotating part 76 of the standby unit 45 (see Figure 19).

[0186] Step S9 (Wafer charging) The temperature measurement wafer 1 is transported to the standby unit 45 and held in the holding and rotating unit 76, after which the temperature measurement wafer 1 is charged. That is, with the temperature measurement wafer 1 placed and held in the spin chuck 81, the control unit 85 controls the power supply unit 80 to supply power from the power supply unit 80 to the power receiving unit 13 of the power receiving board 9 (see Figure 3). As shown in Figure 23, the power supply unit 80 is embedded in the spin chuck 81 of the holding and rotating unit 76. Therefore, when the temperature measurement wafer 1 is placed in the holding and rotating unit 76, the power supply unit 80 is in close proximity to the power receiving board 9. As a result, power EL can be supplied more efficiently from the power supply unit 80 to the power receiving board 9.

[0187] The power EL supplied from the power supply unit 80 to the power receiving section 13 of the power receiving board 9 is transmitted from the power receiving board 9 to the battery board 7, and further supplied to the all-solid-state secondary battery 21 of the battery board 7. In this way, by operating the power supply unit 80 with the temperature measuring wafer 1 placed on the holding and rotating section 76, power EL is accumulated in the all-solid-state secondary battery 21 of the temperature measuring wafer 1, and charging is completed.

[0188] After charging the temperature measurement wafer 1 is complete, the operation of steps S2 to S5 on the heating plate 54 of the heat treatment unit 43 is resumed. Specifically, the control unit 85 controls the substrate transport mechanism TR3, etc., and the substrate transport mechanism TR3 transports the temperature measurement wafer 1 from the standby unit 45 to the heat treatment unit 43 (step S2). Then, with the temperature measurement wafer 1 placed on the heating plate 54 of the heat treatment unit 43, the temperature of the heating plate 54 is measured and the temperature is adjusted (steps S3 to S5).

[0189] As described above, the substrate processing unit 100 according to Embodiment 1 is configured to charge the temperature measuring wafer 1 by performing steps S8 and S9 when the remaining power of the all-solid-state secondary battery 21 in the temperature measuring wafer 1 falls below a predetermined value F1. In Embodiment 1, by arranging the power supply unit 80 in the standby unit 45, it is possible to charge the temperature measuring wafer 1 without removing the temperature measuring wafer 1 from the substrate processing apparatus 30. Therefore, the operating efficiency of the temperature measuring wafer 1 can be further improved.

[0190] (D) When the temperature of the wafer used for temperature measurement rises Next, we will explain the case where the selection in step Q3 is "Yes". If the selection in step Q3 is "Yes", after the process in step S5 is completed, the processes in steps S10 and S11 are performed. In this case, the selections in steps Q1, Q2, and Q4 are all assumed to be "No".

[0191] By repeating steps S2 to S5 for multiple heat treatment units 43, the temperature of the temperature measuring wafer 1 rises. In particular, placing the temperature measuring wafer 1 on the heating plate 54, which is in a high-temperature state, makes it easier for the temperature of the temperature measuring wafer 1 to rise. If the temperature of the temperature measuring wafer 1 rises excessively, the operating efficiency of the temperature measuring wafer 1 decreases. In particular, if the temperatures of the battery substrate 7 and the power receiving substrate 9 rise excessively, the all-solid-state secondary battery 21 and various integrated circuits deteriorate, which tends to reduce the performance of the temperature measuring wafer 1.

[0192] Therefore, the substrate processing system 100 according to Embodiment 1 is configured to continuously detect the temperatures of the battery substrate 7 and the power receiving substrate 9, which are disposed on the temperature measuring wafer 1. The substrate processing system 100 is configured to cool the temperature measuring wafer 1 when the temperature of either the battery substrate 7 or the power receiving substrate 9 exceeds the operating threshold F2 (step S10), and to notify information that the battery substrate 7 or the power receiving substrate 9 is at a high temperature (step S11).

[0193] The following describes the processes in steps S10 and S11, which are performed when the selection in step Q3 is "Yes".

[0194] Step S10 (Wafer Cooling) If the temperature of either the battery board 7 or the power receiving board 9 exceeds the operating threshold F2, the control unit 85 controls various configurations to cool the temperature measuring wafer 1. The situation in which the temperature of the battery board 7 or the power receiving board 9 exceeds the operating threshold F2 almost always occurs when the temperature measuring wafer 1 is placed on the heating plate 54. Therefore, if the selection in step Q3 is "Yes", the cooling control unit 88 of the control unit 85 transports the temperature measuring wafer 1 from the heating plate 54 to the cooling plate 53 and performs a cooling process on the cooling plate 53.

[0195] The operation of transporting the temperature measurement wafer 1 from the heating plate 54 to the cooling plate 53 will be explained using Figures 24(a) to 24(c).

[0196] Refer to Figure 24(a). When the cover 68 is lowered from the upper retracted position, the cover lifting mechanism 69 raises the cover 68 to the retracted position. Then, the second pin lifting mechanism 58 raises the three second support pins 57 to place the temperature measuring wafer 1 on the three second support pins 57.

[0197] Refer to Figure 24(b). The local transport mechanism 59 moves the transport arm 65 that holds the temperature measuring wafer 1 from above the heating plate 54 to above the cooling plate 53.

[0198] Refer to Figure 24(c). The local transport mechanism 59 lowers the transport arm 65 to bring it into contact with the cooling plate 53. When the transport arm 65 comes into contact with the cooling plate 53, the transport arm 65 is cooled by the cooling plate 53. That is, the temperature measuring wafer 1 held by the transport arm 65 is cooled by the cooling plate 53 together with the transport arm 65. As a result of the cooling process by the cooling plate 53, the temperature of the battery substrate 7 and the power receiving substrate 9 on the temperature measuring wafer 1 decreases. As a result, the temperature of both the battery substrate 7 and the power receiving substrate 9 quickly falls below the operating threshold F2.

[0199] Step S11 (Notification of temperature rise) In Embodiment 1, step S11 is performed in parallel with the process related to step S10. When step S11 is started, the control unit 85 activates the notification unit 91. The notification unit 91 generates a warning sound or light to notify the operator that the temperature of the battery board 7 or the power receiving board 9 has risen to or above the operating threshold F2. As another example of a configuration in which the notification unit 91 notifies information regarding the temperature rise, characters or images suggesting that the temperature of the battery board 7 or the power receiving board 9 has risen to or above the operating threshold F2 may be displayed on the display unit of the operation unit 87.

[0200] The notification unit 91 notifies the operator of information regarding the temperature rise, allowing the operator to quickly know that the temperature of the battery substrate 7 or the power receiving substrate 9 has risen to or above the operating threshold F2. When the operator receives the information notified by the notification unit 91, they may, for example, perform an operation to remove the temperature measuring wafer 1 from the substrate processing apparatus 30, retrieve the temperature measuring wafer 1 that has risen in temperature, and bring a new temperature measuring wafer 1 into the substrate processing apparatus 30.

[0201] As described above, the substrate processing unit 100 according to Embodiment 1 is configured to perform steps S10 and S11 when the temperature of the battery substrate 7 or the power receiving substrate 9 on the temperature measuring wafer 1 rises to or above the operating threshold F2. By performing steps S10 and S11, even if the temperature of the temperature measuring wafer 1 rises to or above the operating threshold F2, the temperature of the temperature measuring wafer 1 can be rapidly reduced. As a result, the situation in which the performance of the temperature measuring wafer 1 deteriorates due to the temperature of the temperature measuring wafer 1 rising to or above the operating threshold F2 can be more reliably avoided.

[0202] (E) When temperature measurement has been completed for all heating plates 54 Finally, the case where step Q4 is selected as "Yes" will be explained. Step Q4 is selected as "Yes" when steps S2 to S5 have been completed for all heat treatment units 43 selected as targets for temperature measurement. In this case, the control unit 85 controls the substrate transport mechanisms TR1 to TR3 to transport the temperature measurement wafer 1 to the outside of the substrate processing apparatus 30. Specifically, substrate transport mechanism TR3 holds the temperature measurement wafer 1 and transports it from the holding block 32 to the substrate mounting section PS1 of the indexer block 31. Substrate transport mechanism TR1 holds the temperature measurement wafer 1 placed on the substrate mounting section PS1 and transports it to the outside of the indexer block 31 through the opening 91. Then, substrate transport mechanism TR1 loads the temperature measurement wafer 1 into the carrier C. The operator retrieves the temperature measurement wafer 1 loaded into the carrier C. The series of operations is completed with the above steps.

[0203] If the selection in step Q4 is "Yes", the series of operations may be completed with the temperature measurement wafer 1 waiting in the standby unit 45. That is, if the selection in step Q4 is "Yes", the substrate transport mechanism TR3 holds the temperature measurement wafer 1 and transports it to the standby unit 45. Then, with the temperature measurement wafer 1 placed and held on the holding rotation part 76 of the standby unit 45, the temperature measurement wafer 1 is kept waiting until the process of measuring the heat treatment unit 43 is started again.

[0204] <Effects of the configuration in Example 1> The substrate measurement unit 100 according to Embodiment 1 comprises a temperature measurement wafer 1 and a substrate processing device 30. The temperature measurement wafer 1 measures the temperature of the heating plate 54 provided by the heat treatment unit 43. The temperature measurement wafer 1 comprises a temperature sensor 3, a transmitting unit 8, and a battery substrate 7. The temperature sensor 3 measures the temperature of the heating plate 54 with the temperature measurement wafer 1 placed on the heating plate 54, which is the object of temperature measurement.

[0205] The transmitting unit 8 wirelessly transmits the temperature data of the heating plate, measured by the temperature sensor 3, to the outside of the temperature measuring wafer 1 while the temperature measuring wafer 1 is placed on the heating plate 54. The temperature data transmitted from the transmitting unit 8 is received by the receiving unit 46 of the substrate processing apparatus 30. In other words, the substrate measurement unit 100 is configured to communicate wirelessly between the temperature measuring wafer 1 and the substrate processing apparatus 30.

[0206] Since the temperature measurement wafer 1 is equipped with a transmitting unit 8, a communication wire is not required. In other words, the temperature measurement wafer 1 can be operated wirelessly. With wired temperature measurement wafers that use a communication wire, the range in which the temperature measurement wafer can be transported is limited by the length of the communication wire, which reduces the versatility of the temperature measurement wafer. Furthermore, when transporting wired temperature measurement wafers, twisting or breakage of the communication wire may occur, raising concerns that it may become difficult to transmit information from the temperature measurement wafer to an external source. In addition, it is difficult to automate the process of loading wired temperature measurement wafers into the substrate processing equipment, requiring manual loading of the temperature measurement wafer into the substrate processing equipment. Unlike such conventional temperature measurement wafers, in Embodiment 1, the temperature measurement wafer 1 is operated wirelessly, thus avoiding the decrease in operational efficiency caused by the communication wire. Therefore, the operational efficiency of the temperature measurement wafer 1 can be improved.

[0207] The battery board 7 is equipped with an all-solid-state secondary battery 21. That is, the battery board 7 uses the all-solid-state secondary battery 21 to supply power to the temperature sensor 3 and the transmitter 8, etc. In Embodiment 1, by mounting the all-solid-state secondary battery 21 as a power source on the temperature measuring wafer 1, the temperature measuring wafer 1 can be operated under higher temperature conditions compared to conventional wireless temperature measuring wafers that were equipped with alkaline ion batteries or the like. Specifically, in conventional wireless temperature measuring wafers, the temperature of the heating plate 54 on which temperature measurement is possible is limited to 150°C or below. On the other hand, in Embodiment 1, by using the all-solid-state secondary battery 21, it becomes possible to measure the temperature of the heating plate 54 heated to about 250°C. Therefore, it is possible to use the temperature measuring wafer 1 under higher temperature conditions while improving the operating efficiency of the temperature measuring wafer 1.

[0208] Furthermore, in the battery substrate 7, the all-solid-state secondary battery 21 has a flattened shape. In this case, the thickness of the temperature measurement wafer 1 on which the battery substrate 7 is arranged can be reduced, so the temperature measurement wafer 1 can be automatically transported using the substrate transport mechanisms TR1 to TR3, just like the wafer W. Specifically, in the substrate processing apparatus 30, the heat treatment unit 43 tends to be stacked in more layers, so the slit width (width in the z direction) of the loading / unloading port 60A of the heat treatment unit 43 tends to become smaller. Therefore, in order to realize a configuration in which the substrate transport mechanism TR3 automatically transports the temperature measurement wafer 1 via the loading / unloading port 60A of the heat treatment unit 43, the thickness of the temperature measurement wafer 1 must be 4 mm or less throughout. Conventionally, it has been difficult to miniaturize all-solid-state secondary batteries, so it has been difficult to make the temperature measurement wafer equipped with an all-solid-state secondary battery thin enough to be automatically transported.

[0209] In contrast, in Example 1, the all-solid-state secondary battery 21 has a flattened shape. For example, multiple all-solid-state secondary batteries 21 are electrically connected in series and arranged along the surface of the wafer body 2. This allows for a larger capacity of the battery substrate 7 while making the battery substrate 7 thinner. As a result, automatic transport of the temperature measuring wafer 1 equipped with the all-solid-state secondary battery 21 becomes possible, improving the heat resistance and operating efficiency of the temperature measuring wafer 1. In particular, the battery substrate 7 has a structure in which the heat insulating sheet 15, the lower plate 17b of the housing 17, the tape 27, the heat insulating sheet 23, the battery unit 19, the heat insulating sheet 25, and the tape 29 are stacked in order from the side closest to the wafer body 2 in the thickness direction. With this structure, the heat resistance of the battery substrate 7 can be improved while reducing the thickness d of the battery substrate 7, including the portion of the wafer body 2, to 4 mm or less. That is, by having a stacked structure in which the all-solid-state secondary battery 21 is sandwiched between multiple heat insulating sheets, the heat resistance of the battery substrate 7 can be improved while reducing the thickness of the battery substrate 7 equipped with the all-solid-state secondary battery 21.

[0210] Furthermore, the substrate processing system 100 according to Example 1 improves the accuracy of temperature adjustment of the heating plate 54 and allows for rapid temperature adjustment. Conventional temperature measuring wafers, as shown in Patent Document 2, are equipped with memory, and after measuring the temperature of the heating plate, the temperature data of the heating plate is stored in the memory. After storing the temperature data for multiple heating plates in the memory, the temperature measuring wafer is removed from the heating plate and transported to the data reading unit, where all the temperature data is read from the memory. Then, the temperature of each heating plate is adjusted using the read temperature data for each plate.

[0211] In this conventional configuration, temperature data cannot be read until the temperature of all heating plates has been measured, making it difficult to quickly adjust the temperature of the heating plates. Furthermore, in this conventional configuration, the temperature measurement wafer has been removed from the heating plate by the time the temperature data is read, so even if temperature adjustments are made according to the temperature data, it is difficult to quickly confirm whether the heating plate has been accurately adjusted to the intended temperature.

[0212] In contrast to the conventional configuration, in Embodiment 1, with the temperature measurement wafer 1 placed on the heating plate 54, the transmitting unit 8 transmits temperature data to the outside of the temperature measurement wafer 1. That is, immediately after placing the temperature measurement wafer 1 on the heating plate 54 and measuring the temperature of the heating plate 54, the transmitting unit 8 can transmit the temperature data of the heating plate 54 in real time. Therefore, temperature data of the heating plate 54 can be quickly acquired using the temperature measurement wafer 1. Furthermore, with the temperature measurement wafer 1 placed on the heating plate 54, which is the temperature to be measured, the process of acquiring temperature data of the heating plate 54 and the process of adjusting the temperature of the heating plate 54 based on said temperature data are performed. That is, after performing the process of adjusting the temperature of the heating plate 54 based on the temperature data, the temperature data of the heating plate 54 can be measured again with the temperature measurement wafer 1 still placed on the heating plate 54, so it is possible to quickly confirm whether the heating plate has been accurately adjusted to the expected temperature. As a result, in Embodiment 1, the temperature of the heating plate 54 can be adjusted quickly and accurately.

[0213] In this configuration of Embodiment 1, since the temperature data of the heating plate 54 is transmitted in real time, there is no need to place storage electronic devices, such as memory, on the temperature measurement wafer 1. Therefore, it is possible to avoid situations in which electronic devices such as memory malfunction due to high temperatures. As a result, the heat resistance of the temperature measurement wafer 1 can be improved.

[0214] Furthermore, in Example 1, the heat resistance of the temperature measuring wafer 1 is improved by using an all-solid-state secondary battery 21 as a power source. In other words, the state in which the temperature measuring wafer 1 is placed on the heating plate 54 can be maintained for a longer period of time. As a result, the steps of measuring the temperature of the heating plate 54 (step S3), acquiring the temperature data of the heating plate 54 (step S4), and adjusting the temperature of the heating plate 54 based on the temperature data (step S5) can be repeatedly performed for a longer period of time while the temperature measuring wafer 1 is placed on the heating plate 54, which is the object of temperature measurement. In other words, in Example 1, even if the processes of steps S3 to S5 are repeatedly performed, it is less likely that the temperature of the temperature measuring wafer 1 will rise and the performance of the temperature measuring wafer 1 will deteriorate. Therefore, the operation of adjusting the temperature of the heating plate 54 using the temperature measuring wafer 1 can be performed more quickly and with higher accuracy.

[0215] In Example 1, a power receiving board 9 having a power receiving unit 13 is disposed on the temperature measuring wafer 1. The power receiving board 9 receives power supplied from outside the temperature measuring wafer 1. The power received by the power receiving board 9 is supplied to the all-solid-state secondary battery 21 of the battery board 7. In other words, the temperature measuring wafer 1 has a configuration in which the all-solid-state secondary battery 21 is charged by power supplied from an external source. Therefore, the operating time of the temperature measuring wafer 1 can be extended by supplying power from an external source. The substrate processing apparatus 30 also includes a standby unit 45 having a power supply unit 80. The power supply unit 80 supplies power to the power receiving unit 13 of the temperature measuring wafer 1. In other words, when the power of the temperature measuring wafer 1 becomes low, the temperature measuring wafer 1 can be transported to the standby unit 45, enabling charging by the power supply unit 80. In this case, the battery substrate 7 can be charged without removing the temperature measurement wafer 1 from the substrate processing apparatus 30, thus improving the operating efficiency of the temperature measurement wafer 1 and allowing it to be operated for a longer period of time.

[0216] The standby unit 45 is equipped with a holding and rotating part 76 that can rotate around the z-axis. The holding and rotating part 76 rotates while holding the temperature measuring wafer 1, thereby changing the orientation of the temperature measuring wafer 1 around the z-axis. The measurement substrate 5, which includes a transmitting unit 8, is positioned on the outer periphery of the temperature measuring wafer 1. As the orientation of the temperature measuring wafer 1 changes, the orientation of the transmitting unit 8 changes in the horizontal direction (x-direction and y-direction) perpendicular to the z-direction.

[0217] In other words, by transporting the temperature-measuring wafer 1 to the standby unit 45, the temperature-measuring wafer 1 can be adjusted so that the orientation of the transmitting unit 8 faces the receiving unit 46. That is, even if the substrate processing apparatus 30 has a configuration in which multiple heating plates 54 are arranged in parallel in the x or y direction, the temperature-measuring wafer 1 can be adjusted to the optimal direction on each heating plate 54 so that the orientation of the transmitting unit 8 faces the receiving unit 46. Therefore, regardless of which heating plate 54 the temperature-measuring wafer 1 is placed on, wireless communication from the transmitting unit 8 of the temperature-measuring wafer 1 to the receiving unit 46 of the substrate processing apparatus 30 can be performed with high accuracy.

[0218] In Embodiment 1, the standby unit 45 is located in the transport space 42. The substrate transport mechanism TR3, which transports the temperature-measuring wafer 1 between multiple heating plates 54, is also located in the transport space 42. Therefore, if a situation arises where the temperature-measuring wafer 1 needs to be placed in the standby unit 45 when it is being transported from one heating plate 54 to another, the temperature-measuring wafer 1 can be quickly transported to the standby unit 45. This further improves the operational efficiency of the substrate processing system 100.

[0219] In Embodiment 1, the temperature measuring wafer 1 includes a battery temperature detection unit 11 and a substrate temperature detection unit 14. The battery temperature detection unit 11 measures the temperature of the battery substrate 7 and transmits the temperature data of the battery substrate 7 to the transmission unit 8. The substrate temperature detection unit 14 measures the temperature of the power receiving substrate 9 and transmits the temperature data of the power receiving substrate 9 to the transmission unit 8. The transmission unit 8 is configured to wirelessly transmit the temperature data of the battery substrate 7 and the temperature data of the power receiving substrate 9 to the receiving unit 46. In other words, the temperature measuring wafer 1 can transmit not only the temperature data of the heating plate 54, but also the temperature data of the battery substrate 7 and the temperature data of the power receiving substrate 9 to the outside of the temperature measuring wafer 1.

[0220] Each temperature data received by the receiving unit 46 is transmitted to the control unit 85. Based on the received temperature data, the control unit 85 controls the components of the substrate processing apparatus 30 to prevent the temperature measuring wafer 1 from overheating if the temperature of either the battery substrate 7 or the power receiving substrate 9 exceeds the operating threshold F2. One example of control to prevent the temperature measuring wafer 1 from overheating is to move the temperature measuring wafer 1 away from the heating plate 54 and cool it on the cooling plate 53. In Embodiment 1, by providing a configuration that measures the temperatures of the battery substrate 7 and the power receiving substrate 9, the situation in which the temperature measuring wafer 1 overheats and its performance deteriorates can be quickly and reliably avoided.

[0221] Furthermore, in Embodiment 1, the substrate processing apparatus 30 is equipped with a notification unit 91. When the temperature of either the battery substrate 7 or the power receiving substrate 9 exceeds the operating threshold F2, the notification unit 91 notifies the operator of this information. The operator can quickly learn from the notification unit 91 that the temperature of either the battery substrate 7 or the power receiving substrate 9 has exceeded the operating threshold F2, and can quickly perform operations to avoid overheating of the temperature measurement wafer 1. Therefore, it is possible to more reliably avoid deterioration of the performance of the temperature measurement wafer 1 caused by the battery substrate 7 or the power receiving substrate 9 being heated above the operating threshold F2. [Examples]

[0222] Next, Embodiment 2 of the present invention will be described with reference to the drawings. Note that components that overlap with those in Embodiment 1 are denoted by the same reference numerals, and detailed descriptions are omitted. The substrate processing system 100A according to Embodiment 2 consists of a temperature measuring wafer 1 and a substrate processing apparatus 30A. Figure 26 is a longitudinal cross-sectional view showing the substrate processing apparatus 30A according to Embodiment 2. Figure 27 is a transverse cross-sectional view showing the substrate processing apparatus 30A according to Embodiment 2. Figure 27 corresponds to the cross-sectional view taken along the arrow cc in Figure 26.

[0223] The substrate processing apparatus 30A according to Example 2 differs from the substrate processing apparatus 30 according to Example 1 in that the standby unit 45 is located in a different position. As shown in Figure 4 and other figures, in the substrate processing apparatus 30 according to Example 1, the standby unit 45 is located in the transport space 42 of the processing block 32. On the other hand, in the substrate processing apparatus 30A according to Example 2, as shown in Figures 26 and 27, the standby unit 45 is located in the heat treatment block section 97 of the processing block 32.

[0224] Figure 26 shows the arrangement of the heat treatment units 43 and standby units 45 in the processing block 32. In Embodiment 2, as in Embodiment 1, the heat treatment block section 97 is provided with a space for arranging the heat treatment units 43 in a 3x5 grid. In Embodiment 2, the standby units 45 are arranged in one of the spaces provided in the 3x5 grid. In Figure 26, as an example, the standby units 45 are arranged in the bottom row of the row in which the heat treatment units 43C are located. That is, in Embodiment 2, the heat treatment block section 97A and the heat treatment block section 97B each include 5 heat treatment units 43A, 5 heat treatment units 43B, and 4 heat treatment units 43C. Thus, in the substrate processing apparatus 30A according to Embodiment 2, the standby units 45 are arranged in the available space of the heat treatment block 97.

[0225] Figure 27 shows the state in which the temperature measuring wafer 1 is being transported from the heat treatment unit 43A to the standby unit 45 in Example 2. In other words, Figure 27 shows the operation of step S6 (or step S8) in Example 2. When transporting the temperature measuring wafer 1 from the heat treatment unit 43A to the standby unit 45 in Example 2, the substrate processing mechanism TR3 holds the temperature measuring wafer 1 in the heat treatment unit 43A and then transports the temperature measuring wafer 1 from the heat treatment unit 43A via the input / output port 60A of the heat treatment unit 43A (see reference numeral PE). Subsequently, the first moving mechanism 51 moves in the x direction, causing the substrate processing mechanism TR3 to transport the temperature measuring wafer 1 to the input / output port 60A of the standby unit 45. The substrate processing mechanism TR3 then loads the temperature measuring wafer 1 into the standby unit 45 via the input / output port 60A and places the temperature measuring wafer 1 on the holding and rotating part 76. Since steps S1 to S11 in Example 2 are the same as those in Example 1, a detailed explanation will be omitted.

[0226] In Example 2, the temperature of the heating plate 54 is measured using the temperature measurement wafer 1, similar to Example 1. Furthermore, the substrate processing apparatus 30A in Example 2 has the same configuration as the substrate processing apparatus 30 in Example 1, except for the position of the standby unit 45. Therefore, the same effects as in Example 1 can be obtained in Example 2. That is, it becomes possible to use the temperature measurement wafer 1 under higher temperature conditions while improving the operating efficiency of the substrate processing unit 100A.

[0227] In Example 2, the standby unit 45 is placed in the empty space of the heat treatment block 97. In this case, the substrate processing apparatus 30A according to Example 2 can be easily realized by replacing one of the heat treatment units 43, which are arranged in multiple locations on the heat treatment block 97 of a conventional substrate processing apparatus, with the standby unit 45. In other words, by reusing an existing substrate processing apparatus, the effects of the substrate processing unit 100A according to the present invention can be obtained at a low cost. Furthermore, in Example 2, the standby unit 45 is placed on the heat treatment block 97. Therefore, interference between the substrate transport mechanism TR3, which is located in the transport space 42, and the standby unit 45 can be reliably avoided. [Examples]

[0228] Next, Embodiment 3 of the present invention will be described with reference to the drawings. The substrate processing system 100B according to Embodiment 3 consists of a temperature measuring wafer 1 and a substrate processing apparatus 30B. Figure 28 is a plan view of the substrate processing apparatus 30B according to Embodiment 3. Figure 28 is a longitudinal cross-sectional view of the substrate processing apparatus 30B according to Embodiment 3. In addition to the indexer block 31 and processing block 32, the substrate processing apparatus 30B according to Embodiment 3 includes a processing block 98, an interface block 99, and an exposure apparatus EXP. The configuration of the indexer block 31 and processing block 32 is the same as in Embodiment 1, so a description will be omitted.

[0229] The processing block 98 performs a development process on the exposed wafer W. The processing block 98 comprises a heat treatment block 101, a transport space 102, and a development block 103. The processing block 98 comprises an upper processing layer 98A and a lower processing layer 98B. Each of the upper processing layer 98A and the lower processing layer 98B comprises one heat treatment block 101, one transport space 102, and one development block 103. The heat treatment block 101 and the development block 103 are arranged so as to sandwich the transport space 102.

[0230] The heat treatment block 101 comprises an edge exposure section EEW and a plurality of heat treatment units 43. The edge exposure section EEW performs exposure processing on the peripheral edge of the wafer W. The edge exposure section EEW is equipped with a holding and rotating section similar to the holding and rotating section 76. In Embodiment 3, the heat treatment block 101 is equipped with 15 heat treatment units 43 arranged in a 3x5 grid, similar to the heat treatment block 97.

[0231] As shown in Figure 29, the transport space 102 is equipped with a substrate transport mechanism TR4. The substrate transport mechanism TR4 is configured similarly to the substrate transport mechanism TR3 provided in the transport space 42. A substrate mounting section PS3 is provided between the processing layer 32A of the processing block 32 and the processing layer 98A of the processing block 98. A substrate mounting section PS4 is provided between the processing layer 32B of the processing block 32 and the processing layer 98B of the processing block 98. That is, the substrate mounting sections PS3 and PS4 are arranged between the processing block 32 and the processing block 98. A substrate mounting section PS5 is provided between the upper processing layer 98A and the interface block 99. A substrate mounting section PS6 is provided between the lower processing layer 98B and the interface block 99. In Embodiment 3, the substrate transport mechanism TR3, the substrate transport mechanism TR4, and the local transport mechanism 59 are used to transport the temperature measuring wafer 1 between the heating plate 54 and the standby unit 45. In Example 3, the substrate transport mechanism TR3, the substrate transport mechanism TR4, and the local transport mechanism 59 correspond to the transport unit in the present invention.

[0232] The developing block 103 performs a developing process on the exposed wafer W. The developing block 103 is equipped with various mechanisms used in the developing process, such as a developing tank filled with developing solution and a nozzle for applying the developing solution to the wafer W.

[0233] The interface block 99 loads and unloads wafers W to and from the exposure apparatus EXP that performs exposure processing. The interface block 99 includes three substrate transport mechanisms TR5 to TR7, multiple pre-exposure cleaning units 104, multiple post-exposure cleaning units SOAK, three mounting and cooling units P-CP, a substrate mounting unit PS9, and multiple heat treatment units 43.

[0234] The substrate transport mechanisms TR5 and TR6 are arranged side by side in the y-direction. The substrate transport mechanism TR7 is located to the right of the substrate transport mechanisms TR5 and TR6 in the x-direction. The three substrate transport mechanisms TR5 to TR7 are configured similarly to the substrate transport mechanism TR1.

[0235] The pre-exposure cleaning unit 104 and the post-exposure cleaning unit SOAK are positioned opposite each other, with two substrate transport mechanisms TR5 and TR6 in between. Each of the cleaning units 104 and SOAK includes a holding and rotating section for holding the wafer W, and a nozzle for discharging, for example, a cleaning solution onto the wafer W. The holding and rotating section is configured similarly to the holding and rotating section 76 of the standby unit 45. The pre-processing cleaning unit 104 may also perform polishing on the back surface and edges (bevels) of the wafer W using a brush or the like. The back surface of the wafer W corresponds to, for example, the surface opposite to the surface on which the circuit pattern is formed.

[0236] Between the three substrate transport mechanisms TR5 to TR7, three mounting and cooling sections P-CP and a substrate mounting section PS9 are provided. In the interface block 99, six heat treatment units 43 are provided on the side of substrate transport mechanism TR5 and six on the side of substrate transport mechanism TR6. The six heat treatment units 43 are stacked and arranged in the z direction.

[0237] The exposure apparatus EXP is an external device that performs exposure processing on the wafer W. The exposure apparatus EXP is located adjacent to the interface block 99. Thus, the substrate processing apparatus 30B according to Embodiment 3 is configured to perform developing, coating, heat treatment, and exposure processing on the wafer W.

[0238] In Embodiment 3, one standby unit 45 is provided above the substrate mounting section PS3 and another above the substrate mounting section PS4. That is, in the substrate processing apparatus 30B according to Embodiment 3, the standby unit 45 is provided between the processing block 32 and the processing block 98.

[0239] In the substrate processing unit 100B according to Example 3, the outline of the process for measuring the temperature of the heating plate 54 using the temperature measurement wafer 1 is the same as the process in Example 1 shown in Figure 11.

[0240] When measuring the heating plate 54 of the heat treatment unit 43 located in the processing block 98, the process of transporting the temperature measurement wafer 1 to the heat treatment unit 43 of the processing block 98 in step S2 is as follows: The temperature measurement wafer 1 placed on the substrate mounting section PS1 (or substrate mounting section PS2) of the indexer block 31 is held by the substrate transport mechanism TR3 of the processing block 32. The substrate transport mechanism TR3 moves in the x direction while holding the temperature measurement wafer 1 and places the temperature measurement wafer 1 on the substrate mounting section PS3 (or substrate mounting section PS4).

[0241] The substrate transport mechanism TR4 of the processing block 98 holds the wafer body 2 of the temperature measurement wafer 1 placed on the substrate mounting section PS3 (or substrate mounting section PS4) with the hand 47. Then, it transports the temperature measurement wafer 1 from the substrate mounting section PS3 to the heat treatment unit 43 of the processing block 98. In step S3, the temperature measurement wafer 1 is brought into the heat treatment unit 43, and the temperature measurement wafer 1 is placed on the heating plate 54 to measure the temperature.

[0242] When measuring the heating plate 54 of the heat treatment unit 43 located in the interface block 99, the process of transporting the temperature measurement wafer 1 to the heat treatment unit 43 of the interface block 99 in step S2 is as follows: The temperature measurement wafer 1 placed on the substrate mounting section PS1 (or substrate mounting section PS2) of the indexer block 31 is held by the substrate transport mechanism TR3 of the processing block 32. The substrate transport mechanism TR3 moves in the x direction while holding the temperature measurement wafer 1 and places the temperature measurement wafer 1 on the substrate mounting section PS3 (or substrate mounting section PS4).

[0243] The substrate transport mechanism TR4 of the processing block 98 holds the temperature measuring wafer 1 which is placed on the substrate mounting section PS3 (or substrate mounting section PS4). The substrate transport mechanism TR4 moves in the x direction while holding the temperature measuring wafer 1 and places the temperature measuring wafer 1 on the substrate mounting section PS5 (or substrate mounting section PS6).

[0244] The substrate transport mechanisms TR5 and TR6 located in the interface block 99 hold the temperature measurement wafer 1, which is placed on the substrate mounting section PS5, with the hands 37. Then, they transport the temperature measurement wafer 1 from the substrate mounting section PS5 to the heat treatment unit 43 of the interface block 99. In step S3, the temperature measurement wafer 1 is brought into the heat treatment unit 43, and the temperature measurement wafer 1 is placed on the heating plate 54 to measure the temperature. Steps S3 to S11 in Example 3 are the same as in Example 1, so a detailed explanation is omitted.

[0245] In Example 3, the temperature of the heating plate 54 is measured using the temperature measurement wafer 1, similar to Example 1. Similarly, in the substrate processing apparatus 30B, which performs coating, exposure, development, and heat treatment on the wafer W, the same effects as in Example 1 can be obtained in Example 3 by measuring the temperature of the heating plate 54 using the temperature measurement wafer 1. That is, it becomes possible to use the temperature measurement wafer 1 under higher temperature conditions while improving the operating efficiency of the substrate processing unit 100B.

[0246] In Embodiment 3, the standby unit 45 is positioned between the processing block 32 and the processing block 98. In this case, the standby unit 45 is positioned in the center of the substrate processing apparatus 30B in a plan view, so the time required to transport from the heat treatment unit 43 to the standby unit 45 in step S6 or step S8 can be shortened. Also in Embodiment 3, the standby unit 45 is positioned in a location that overlaps with the substrate mounting section PS3 in a plan view. Therefore, the temperature measurement wafer 1 can be transported to the standby unit 45 by utilizing the operation in which the substrate transport mechanism TR3 or the substrate transport mechanism TR4 transfers the wafer W at the substrate mounting section PS3. Thus, it is possible to avoid complicating the control for transporting the temperature measurement wafer 1 to the standby unit 45.

[0247] This invention is not limited to the above embodiments and can be modified and implemented as follows.

[0248] (1) In each of the embodiments described above, the processing block 32 is composed of two processing layers 32A and 32B stacked in the z direction, but is not limited to this. That is, the processing block 32 may have one processing layer or three or more processing layers. Similarly, in Embodiment 3, the processing block 98 may have one or three or more processing layers.

[0249] (2) In each of the embodiments described above, the substrate processing apparatus 30, 30A, and 30B may be configured to include a heat treatment unit 43, and the configuration of the other processing blocks may be changed as appropriate. For example, in the substrate processing apparatus 30 according to Embodiment 1, a processing block 98 that performs developing may be provided instead of the processing block 32 that performs coating. That is, the substrate processing apparatus 30 may be configured to include an indexer block 31 and a processing block 98.

[0250] (3) In each of the embodiments described above, the number and location of the standby units 45 provided in the substrate processing apparatus 30, 30A, and 30B may be changed as appropriate. For example, the standby units 45 are not limited to being provided one each in the processing layer 32A and the processing layer 32B, but may be provided in one of the processing layer 32A and the processing layer 32B. Furthermore, each of the processing layer 32A and the processing layer 32B may be provided with two or more standby units 45.

[0251] (4) In each of the embodiments described above, the substrate processing apparatus 30, 30A, and 30B do not need to have a standby unit 45. In this case, options Q1 to Q2 and steps S6 to S9 are omitted in the flowchart shown in Figure 11. In a modified example using a substrate processing apparatus 30 without a standby unit 45, charging of the temperature measuring wafer 1 to the battery substrate 7 is performed outside the substrate processing apparatus 30. That is, step S1 is performed after charging the temperature measuring wafer 1. When the remaining power in the temperature measuring wafer 1 falls below a predetermined value F1, steps S2 to S5 are interrupted and the temperature measuring wafer 1 is removed from the substrate processing apparatus 30. The temperature measuring wafer 1 that has been removed from the substrate processing apparatus 30 is then charged using a commercial power supply or the like. After charging is complete, the temperature measuring wafer 1 is brought back into the substrate processing apparatus 30 and steps S2 to S5 are resumed.

[0252] (5) In each of the embodiments described above, the operation of transporting the temperature measuring wafer 1 from the heating plate 54 to the cooling plate 53 was given as an example of a specific operation to be performed in step S10 for cooling the temperature measuring wafer 1, but it is not limited to this. In step S10, other operations may be performed as long as they prevent the temperature of the temperature measuring wafer 1 from rising above the operating threshold F2. As another example of an operation to be performed in step S10, the temperature measuring wafer 1 may be transported to the standby unit 45 and placed on the holding and rotating unit 76 to prevent the temperature of the temperature measuring wafer 1 from rising.

[0253] (6) In each of the above-described embodiments, the power receiving unit 9 provided in the wafer 1 for temperature measurement is not limited to a configuration that receives power supplied from the outside by a wireless method. That is, the power receiving unit 9 may be configured to receive external power by a wired method. As an example, the power receiving unit 9 may include a connection portion to which a power supply cable can be connected, and by connecting the power supply cable to the connection portion, charging of the battery substrate 7 may be performed.

[0254] (7) In each of the above-described embodiments, the position and number of the receiving unit 46 that receives the temperature data transmitted from the transmitting unit 8 may be appropriately changed. That is, the receiving unit 46 may be disposed at a location other than the transport space 42. Further, the substrate processing apparatus 30 may not include the receiving unit 46, and the receiving unit 46 may be disposed outside the substrate processing apparatus 30. In a modified example in which the substrate processing apparatus 30 does not include the receiving unit 46, the temperature data of the heating plate 54 obtained in the state of being placed on the heating plate 54 is wirelessly transmitted from the wafer 1 for temperature measurement to the outside of the substrate processing apparatus 30. Then, the transmitted temperature data is received by the receiving unit 46 disposed outside the substrate processing apparatus 30.

[0255] (8) In each of the above-described embodiments, as long as the information is communicated from the transmitting unit 8 of the wafer 1 for temperature measurement to the outside of the wafer 1 for temperature measurement by a wireless method, the method of communicating information inside the wafer 1 for temperature measurement is not limited to the wireless method. As an example, the temperature sensor 3 and the measurement substrate 5 may be connected by a communication cable, and temperature data may be transmitted from the temperature sensor 3 to the measurement substrate 5 via the communication cable. That is, the communication from the temperature sensor 3 to the measurement substrate 5 may be a wired method. Similarly, information may be communicated from the battery substrate 7 to the measurement substrate 5 by a wired method, and information may be communicated from the power receiving substrate 9 to the measurement substrate 5 by a wired method.

[0256] (9) In each of the above-described embodiments, the substrate transfer mechanisms TR3 and TR4 are provided with two hands 47, but they may be provided with one or three or more hands 47. Similarly, the substrate transfer mechanisms TR1, TR2, TR5, TR6, and TR7 are provided with two hands 37, but they may be provided with one or three or more hands 37.

[0257] (10) In each of the above-described embodiments, one end of, for example, a gas pipe (not shown) may be connected to the cover 68 shown in FIG. 4. In this case, an arbitrary gas can be supplied into the processing space SP surrounded by the heating plate 54 and the cover 68. The arbitrary gas is, for example, an inert gas (e.g., nitrogen gas) and a processing gas (e.g., HMDS (hexamethyldisilazane)).

[0258] (11) In each of the above-described embodiments, the local transfer mechanism 59 may be omitted. That is, in Embodiments 1 and 2, the temperature measurement wafer 1 may be transferred between the heating plate 54 and the standby unit 45 by using only the substrate transfer mechanism TR3. In such a modification, the substrate transfer mechanism TR3 transfers the temperature measurement wafer 1 between the standby unit 45 and the cooling plate 53 in the heat treatment unit 43, and transfers the temperature measurement wafer 1 between the cooling plate 53 and the heating plate 54 in the heat treatment unit 43. Similarly, in Embodiment 3, the local transfer mechanism 59 may be omitted, and the temperature measurement wafer 1 may be transferred between the heating plate 54 and the standby unit 45 by using the substrate transfer mechanism TR3 or TR4.

Explanation of Reference Numerals

[0259] 1... Temperature measurement wafer 2... Wafer main body 3... Temperature sensor 5... Measurement substrate 6... A / D converter 7... Battery substrate 8... Transmission unit 9... Power receiving substrate 10... Notch 11... Battery temperature detection unit 13 … Power receiving unit 14 … Substrate temperature detection unit 15 … Heat insulation sheet 17 … Housing 19 … Battery unit 20 … Base substrate 21 … All - solid secondary battery 23 … Heat insulation sheet 25 … Heat insulation sheet 27 … Tape 29 … Tape 30 … Substrate processing apparatus 31 … Indexer block 32 … Processing block 33 … Opener 34 … Opener 36 … Opening 37 … Hand 38 … Forward - backward drive unit 39 … Rotation drive unit 41 … Coating unit 42 … Conveying space 43 … Heat treatment unit 45 … Stand - by unit 46 … Receiving unit 47 … Hand 48 … Forward - backward drive unit 49 … Rotation drive unit 51 … First moving mechanism 52 … Second moving mechanism 53 … Cooling plate 54 … Heating plate 55 … First support pin 56 … First pin lifting mechanism 57 … Second support pin 58 … Second pin lifting mechanism 59 … Local conveying mechanism 60 … Casing 61 … Hole part 63 … Lifting member 65 … Conveying arm 66 … Hole part 67 … Lifting member 68 … Cover 69 … Cover lifting mechanism 71 ... Exhaust port 73 ... Arm drive mechanism 74… Proximity Ball 75…Slit 76 ... Holding and rotating part 77 ... Base part 78 ... Notch detection unit 79... Centering mechanism 80 ... Power supply unit 81... Spin Chuck 83 ... Rotary drive unit 85 ... Control Unit 86 ... Temperature control unit 87...Operation unit 88 ... Cooling control unit 89...Storage section 91 ... Hochi Department 97… Heat treatment block 98 ... Processing block 99… Interface block 100 ... Circuit board processing system C... Career W... circuit board TR1~TR7 ... Circuit board transport mechanism PS1~PS6... Circuit board mounting section

Claims

1. A wafer body that can be placed on top of the object to be measured for temperature, Multiple temperature sensors are disposed on the wafer body, With the wafer body placed on the object to be measured for temperature, a transmitting unit capable of wirelessly transmitting temperature data detected by the temperature sensor, A battery unit having an all-solid-state secondary battery disposed in the wafer body and supplying power to the temperature sensor and the transmitting unit, respectively, A temperature measuring wafer characterized by comprising the following features.

2. In the temperature measuring wafer according to claim 1, The aforementioned battery unit has a plurality of all-solid-state secondary batteries, Multiple of the aforementioned all-solid-state secondary batteries are They are electrically connected in series and arranged along the surface of the wafer body. A wafer for temperature measurement characterized by the following features.

3. In the temperature measuring wafer according to claim 1, The battery section is equipped with a power supply unit that supplies power to the battery section, The aforementioned power supply unit is The temperature measuring wafer has a wireless power receiving unit that can receive power supplied from outside by electromagnetic induction. A wafer for temperature measurement characterized by the following features.

4. In the temperature measuring wafer according to claim 1, The aforementioned battery unit is A first heat insulating sheet is placed on the wafer body, The device comprises a housing portion that houses the flattened all-solid-state secondary battery, which is placed on the first heat insulating sheet, The aforementioned housing portion is The lower housing portion, the second heat insulating sheet, the flattened all-solid-state secondary battery, the third heat insulating sheet, and the upper housing portion are stacked in order from the side closest to the first heat insulating sheet. A wafer for temperature measurement characterized by the following features.

5. In the temperature measuring wafer according to claim 4, The overall thickness of the battery section and the wafer body section is 4 mm or less. A wafer for temperature measurement characterized by the following features.

6. In the temperature measuring wafer according to claim 1, The aforementioned transmitting unit Displaced on the outer periphery of the wafer body A wafer for temperature measurement characterized by the following features.

7. A substrate processing system comprising a substrate processing apparatus that performs at least heat treatment on a substrate, and a temperature measuring wafer according to any one of claims 1 to 6, The substrate processing apparatus is The aforementioned temperature measurement target, comprising a heat treatment unit having a heating plate that performs heat treatment on the mounted substrate, A standby unit comprising a holding section for holding the temperature measuring wafer, and for keeping the temperature measuring wafer held by the holding section in standby inside the substrate processing apparatus, A transport unit for transporting the temperature measuring wafer between the heat treatment unit and the standby unit, A power supply unit that supplies power to the battery section of the temperature measuring wafer being transported to the standby unit, A substrate processing system characterized by comprising the following:

8. In the substrate processing system according to claim 7, A receiving unit is disposed outside the heat treatment unit and receives the temperature data transmitted wirelessly from the transmitting unit, A substrate processing system characterized by comprising the following:

9. In the substrate processing system according to claim 8, A rotation mechanism for rotating the temperature measuring wafer being transported to the standby unit so that the transmitting unit faces the receiving unit when the temperature measuring wafer is mounted on the heating plate, A substrate processing system characterized by comprising the following:

10. In the substrate processing system according to claim 7, The temperature measuring wafer includes a battery temperature detection unit that detects the temperature of the battery section. The transmitting unit is configured to wirelessly transmit the temperature data of the battery unit detected by the battery temperature detection unit. The substrate processing apparatus is A wafer cooling control unit that performs control to cool the temperature measuring wafer when the temperature data of the battery unit exceeds a predetermined operating threshold, A notification unit that notifies that the temperature of the battery unit is above the operating threshold, A substrate processing system characterized by comprising the following:

11. In the substrate processing system according to claim 7, The substrate processing apparatus is The system includes a temperature control unit that adjusts the temperature of the heating plate based on the temperature data of the heating plate transmitted from the transmitting unit, The temperature control unit is With the temperature measuring wafer placed on the heating plate, the temperature of the heating plate is adjusted based on the temperature data of the heating plate. A substrate processing system characterized by the following features.

12. In a substrate processing system comprising a substrate processing apparatus that performs at least heat treatment on a substrate, The substrate processing apparatus is The aforementioned temperature measurement target, comprising a heat treatment unit having a heating plate that performs heat treatment on the mounted substrate, A standby unit comprising a holding section for holding a temperature measuring wafer according to any one of claims 1 to 6, and for keeping the temperature measuring wafer held by the holding section on standby inside the substrate processing apparatus, A transport unit for transporting the temperature measuring wafer between the heat treatment unit and the standby unit, A power supply unit that supplies power to the battery section of the temperature measuring wafer being transported to the standby unit, A substrate processing system characterized by comprising the following:

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