Multilayer electronic components

Abstract

This provides a highly reliable stacked electronic component with improved heat dissipation. [Solution] A stacked electronic component 100 according to one embodiment of the present invention includes a body 110 including a dielectric layer and internal electrodes arranged alternately with the dielectric layer in the D1 direction, with T being the maximum size of the stacked electronic component in the D1 direction, L being the maximum size of the stacked electronic component in the D2 direction, and W being the maximum size of the stacked electronic component in the D3 direction, satisfying W > L and 1.25 ≤ T / L ≤ 1.5.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] Multi-Layered Ceramic Capacitors (MLCCs), a type of multilayer electronic component, are chip-type capacitors mounted on printed circuit boards of various electronic products such as LCDs (Liquid Crystal Displays) and PDPs (Plasma Display Panels), computers, smartphones, and mobile phones, playing the role of charging or discharging electricity. Due to their small size, guaranteed high capacitance, and ease of mounting, these multilayer ceramic capacitors can be used as components in a wide variety of electronic devices.

[0003] Recently, with the expansion of the automotive market, the use of high-temperature and high-voltage MLCCs (Multilayer Cellular Capacitors) operating at voltages of 250V or higher is increasing in circuits such as on-board battery chargers (OBCs) and DC / DC converters in automobiles. In high-temperature and high-pressure environments of this level, MLCCs may experience significant heat generation, which can accelerate dielectric loss and reduce the reliability of the MLCC. Therefore, research into improving MLCC heat dissipation is necessary. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Korean Published Patent Gazette No. 10-2015-0128760 [Overview of the project] [Problems that the invention aims to solve]

[0005] One of the several objectives of the present invention is to provide a highly reliable stacked electronic component.

[0006] However, the objectives of the present invention are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0007] A stacked electronic component according to one embodiment of the present invention includes first and second surfaces facing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in a second direction, fifth and sixth surfaces connected to the first to fourth surfaces and facing each other in a third direction, a body including a dielectric layer and internal electrodes arranged alternately with the dielectric layer in the first direction, and external electrodes arranged on the third and fourth surfaces, respectively, and when the maximum size of the stacked electronic component in the first direction is T, the maximum size of the stacked electronic component in the second direction is L, and the maximum size of the stacked electronic component in the third direction is W, the following conditions can be met: W > L and 1.25 ≤ T / L ≤ 1.5. [Effects of the Invention]

[0008] One of the several effects of the present invention is that it can provide a highly reliable stacked electronic component. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic perspective view of a stacked electronic component according to one embodiment of the present invention. [Figure 2] This is a schematic cross-sectional view showing a section along the line I-I' in Figure 1. [Figure 3] This is a schematic cross-sectional view showing a section along the line II-II' in Figure 1. [Figure 4] This is a schematic cross-sectional view showing a section along the line III-III' in Figure 2. [Figure 5] This is a schematic cross-sectional view of a stacked electronic component according to another embodiment of the present invention, corresponding to Figure 2. [Figure 6] It schematically shows a multilayer electronic component according to another embodiment of the present invention, and is a cross-sectional view corresponding to FIG. 2. [Figure 7] It schematically shows a multilayer electronic component according to another embodiment of the present invention, and is a cross-sectional view corresponding to FIG. 2.

Embodiments for Carrying Out the Invention

[0010] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to ordinary technicians. Therefore, the shapes and sizes of the elements in the drawings can be exaggerated for clearer explanation, and the elements denoted by the same reference numerals in the drawings are the same elements.

[0011] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of each configuration shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. For components with the same functions within the scope of the same concept, the same reference numerals are used for explanation. Furthermore, throughout the specification, when a certain part says that a certain component "includes", this means that other components can be further included, rather than excluding other components, unless there is a specific contrary description.

[0012] In the drawings, the first direction D1 can be defined as the thickness direction, the second direction D2 as the length direction, and the third direction as the width direction.

[0013] Multilayer electronic component Figure 1 is a schematic perspective view of a stacked electronic component according to one embodiment of the present invention, Figure 2 is a schematic cross-sectional view showing a cross section along the line I-I' in Figure 1, Figure 3 is a schematic cross-sectional view showing a cross section along the line II-II' in Figure 1, and Figure 4 is a schematic cross-sectional view showing a cross section along the line III-III' in Figure 2.

[0014] Hereinafter, with reference to Figures 1 to 4, a multilayer electronic component 100 according to one embodiment of the present invention will be described in detail. While a multilayer ceramic capacitor (MLCC) will be described as an example of a multilayer electronic component, the present invention is not limited to this and can be applied to a variety of multilayer electronic components, such as inductors, piezoelectric elements, varistors, or thermistors.

[0015] The stacked electronic component 100 includes a main body 110 and external electrodes 131 and 132.

[0016] There are no particular restrictions on the specific shape of the main body 110, but the main body 110 may be hexahedral or a similar shape. Due to the shrinkage of the ceramic powder contained in the main body 110 during the firing process and the polishing process on the corners of the main body 110 after firing, the main body 110 may not be a perfectly straight hexahedral shape, but may have a substantially hexahedral shape.

[0017] The main body 110 may have a first and second surface 1, 2 that are opposite to each other in the first direction, a third and fourth surface 3, 4 that are opposite to each other in the second direction, and a fifth and sixth surface 5, 6 that are opposite to each other in the third direction.

[0018] The main body 110 may include dielectric layers 111 and internal electrodes 121 and 122 that are alternately arranged with respect to the dielectric layers 111 in a first direction. The multiple dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0019] The dielectric layer 111 can contain, for example, a perovskite compound represented by ABO3 as a main component. The perovskite compound represented by ABO3 is, for example, (Ca

[0023] , , , Sr x )(Zr 1-y Ti y )O3 (0 ≤ x ≤ 0.5, 0 ≤ y ≤ 0.5), BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1).

[0020] However, when a ferroelectric such as BaTiO3 is used as the perovskite compound contained in the dielectric layer 111, even if the dielectric layer 111 has a high dielectric constant at room temperature, the dielectric constant may decrease in a high-temperature and high-pressure environment.

[0021] On the other hand, the CaZrO3-based perovskite compound, which is a normal dielectric, is characterized by small temperature changes in the dielectric constant and dielectric loss. That is, in the case of the multilayer electronic component 100 used in a high-temperature and high-pressure environment, in order to reduce the temperature change rate of the capacitance, the dielectric layer 111 preferably contains (Ca 1-x Sr x )(Zr 1-y Ti y )O3 (0 ≤ x ≤ 0.5, 0 ≤ y ≤ 0.5).

[0022] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122 that are alternately arranged in the first direction with the dielectric layer 111 interposed therebetween. The first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the dielectric layer 111 disposed therebetween.

[0023] The first internal electrode 121 can be exposed on the third surface 3, separated from the fourth surface 4. The first internal electrode 121 can be electrically connected to the first external electrode 131 located on the third surface 3. The second internal electrode 122 can be exposed on the fourth surface 4, separated from the third surface 3. The second internal electrode 122 can be electrically connected to the second external electrode 132 located on the fourth surface 4.

[0024] The conductive metal contained in the internal electrodes 121 and 122 may include one or more of Ni, Cu, Al, Pd, Ag, In, Sn, Ti, and alloys thereof, and more preferably Ni, but the present invention is not limited thereto.

[0025] The main body 110 may include a capacitance forming section Ac, which is disposed inside the main body 110 and in which first and second internal electrodes 121 and 122 are alternately arranged with respect to the dielectric layer 111 to form a capacitance, and cover sections 112 and 113 which are respectively disposed on both sides of the capacitance forming section Ac facing the first direction. The cover sections 112 and 113 may have a configuration similar to the dielectric layer 111, except that they do not include internal electrodes.

[0026] The main body 110 may include margin portions 114 and 115, respectively, arranged on both sides of the capacitance forming portion Ac facing the third direction. The margin portions 114 and 115 may represent the regions between the ends of the internal electrodes 121 and 122 and the interface of the main body 110 in cross-sections obtained by cutting the main body 110 in the first and third directions. The margin portions 114 and 115 may have a configuration similar to the dielectric layer 111, except that they do not include the internal electrodes 121 and 122.

[0027] The cover portions 112, 113 and the margin portions 114, 115 essentially serve to prevent damage to the internal electrodes 121, 122 due to physical or chemical stress.

[0028] External electrodes 131 and 132 may be arranged on the third and fourth surfaces 3 and 4 of the main body 110, respectively. The stacked electronic component 100 may include a first external electrode 131 arranged on the third surface 3 and a second external electrode 132 arranged on the fourth surface 4. The first external electrode 131 may be arranged on the third surface 3 and extend over parts of the first, second, fifth and sixth surfaces 1, 2, 5 and 6, and the second external electrode 132 may be arranged on the fourth surface 4 and extend over parts of the first, second, fifth and sixth surfaces 1, 2, 5 and 6.

[0029] The type and form of the external electrodes 131 and 132 are not particularly limited and may have a multilayer structure. For example, the external electrodes 131 and 132 may include base electrode layers 131a and 132a that come into contact with the internal electrodes 121 and 122, and plating layers 131b and 132b placed on the base electrode layers 131a and 132a.

[0030] The base electrode layers 131a and 132a may be fired electrode layers containing metal and glass. The metal contained in the base electrode layers 131a and 132a may include, for example, Cu, Ni, Sn, Al, Pd, Ag, and / or alloys containing these. The glass contained in the base electrode layers 131a and 132a may include, for example, one or more oxides of Ba, Ca, Zn, Al, B, and Si.

[0031] On the other hand, the base electrode layers 131a and 132a may consist only of a fired electrode layer containing metal and glass, but the present invention is not limited thereto. The base electrode layers 131a and 132a may, for example, include a fired electrode layer containing metal and glass, and a resin electrode layer disposed on the fired electrode layer and containing metal particles and resin.

[0032] The metal particles contained in the resin electrode layer may include one or more spherical particles and flake-shaped particles. Here, spherical particles may include forms that are not perfectly spherical, for example, forms in which the ratio of the length of the long axis to the short axis (long axis / short axis) is 1.45 or less. Flake-shaped particles mean particles that are flat and elongated, and are not particularly limited, but for example, the ratio of the length of the long axis to the short axis (long axis / short axis) may be 1.95 or more. The metal particles contained in the resin electrode layer may include, for example, Cu, Ni, Pd, Ag, Pb, Sn and / or alloys containing these. The resin contained in the resin electrode layer may include, for example, one or more epoxy resin, acrylic resin, and ethylcellulose.

[0033] The plating layers 131b and 132b may contain, for example, Ni, Sn, Pd, and / or alloys containing these, and may be formed in multiple layers. The plating layers 131b and 132b may be, for example, a Ni plating layer or a Sn plating layer, and may be in a form in which the Ni plating layer and the Sn plating layer are formed sequentially. Furthermore, the plating layers 131b and 132b may contain multiple Ni plating layers and / or multiple Sn plating layers.

[0034] The drawings illustrate a structure in which the stacked electronic component 100 has two external electrodes 131 and 132, but it is not limited to this, and the number and shape of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 or other purposes.

[0035] Generally, the maximum size L in the second direction of a multilayer electronic component is greater than the maximum size T in the first direction and the maximum size W in the third direction. That is, multilayer electronic components generally satisfy L>T and L>W. In this case, the internal electrodes are exposed on the cross-section of the main body in the first direction × third direction (hereinafter referred to as the WT surface), which has a relatively smaller area than the cross-section of the main body in the first direction × second direction (hereinafter referred to as the LT surface).

[0036] However, since the heat generated inside a multilayer electronic component is mainly released to the outside of the multilayer electronic component via internal and external electrodes, which are primarily composed of metals with higher thermal conductivity than ceramics, conventional structures have the problem that heat is released on the WT surface of the main body, which has a relatively small surface area.

[0037] According to one embodiment of the present invention, when the maximum size of the stacked electronic component 100 in the first direction is T, the maximum size of the stacked electronic component 100 in the second direction is L, and the maximum size of the stacked electronic component 100 in the third direction is W, it is possible to satisfy W > L. As a result, the internal electrodes 121 and 122 can be exposed on the WT surface of the main body 110, which has a relatively larger area than the LT surface of the main body 110. This allows the heat generated inside the stacked electronic component 100 to be effectively dissipated.

[0038] On the other hand, in order to ensure a sufficient exposed area of ​​the internal electrodes 121 and 122 and effectively dissipate the heat generated inside the stacked electronic component 100, the ratio of the maximum size of the internal electrodes 121 and 122 in the third direction to W may be, for example, 0.7 or more and 0.9 or less.

[0039] Furthermore, in order to achieve the intended electrical characteristics of the multilayer electronic component 100 within a limited mounting area, T and L must be designed appropriately. If T becomes excessively large, the number of layers of internal electrodes 121 and 122 will increase, which may cause cracks or delamination in the multilayer electronic component 100. Also, if L becomes excessively large, the size of the internal electrodes 121 and 122 in the second direction will increase, which may increase the ESL and ESR of the multilayer electronic component 100.

[0040] Therefore, the inventors have confirmed that when T and L satisfy 1.25 ≤ T / L ≤ 1.5, the heat dissipation characteristics, ESL / ESR characteristics, and reliability of the multilayer electronic component 100 are improved. If T / L is less than 1.25, the high-temperature reliability of the multilayer electronic component 100 may decrease. If T / L exceeds 1.5, cracks may occur in the multilayer electronic component 100. On the other hand, considering ease of mounting, it is more preferable that T and L satisfy 1.3 ≤ T / L ≤ 1.4.

[0041] The ratio of L to W (L / W) is not particularly limited. However, L and W can satisfy L / W ≤ 0.8. When L / W ≤ 0.8 is satisfied, the heat dissipation improvement effect of the present invention may become more pronounced.

[0042] Furthermore, T, L, and W can have various values ​​depending on the specifications of the multilayer electronic component 100. However, the heat dissipation characteristics in high-temperature and high-pressure environments become even more important as the size of the multilayer electronic component 100 increases. In particular, when L and W satisfy L≧2.5mm and W≧3.2mm, the heat dissipation improvement effect of the present invention can become more pronounced.

[0043] Furthermore, while the capacitance of the multilayer electronic component 100 can be determined according to the specifications of the multilayer electronic component 100, the heat dissipation characteristics in high-temperature and high-pressure environments become even more important as the capacitance of the multilayer electronic component 100 increases. In particular, when the multilayer electronic component 100 satisfies the COG characteristics while having a capacitance of 10 nF or more, the heat dissipation improvement effect of the present invention may become more pronounced. Also, when the rated voltage of the multilayer electronic component 100 is 630 V or higher, the heat dissipation improvement effect of the present invention may become even more pronounced.

[0044] The average thickness te of the internal electrodes 121 and 122 is not particularly limited. However, when the average thickness te of the internal electrodes 121 and 122 is 1.0 μm or more, the exposed area of ​​the internal electrodes 121 and 122 can be sufficiently secured to improve the heat dissipation characteristics of the laminated electronic component 100. The upper limit of the average thickness te of the internal electrodes 121 and 122 is not particularly limited, but it may be, for example, 2.0 μm or less.

[0045] The average thickness td of the dielectric layer 111 is not particularly limited, but may be, for example, 1.0 μm or more and 50.0 μm or less. In one embodiment, the average thickness td of the dielectric layer 111 may be greater than twice the average thickness of the internal electrodes 121 and 122. That is, td > 2 × te can be satisfied. By satisfying td > 2 × te, the decrease in the dielectric breakdown voltage of the multilayer electronic component 100 under a high voltage environment can be suppressed.

[0046] The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 represent the average size of the dielectric layer 111 and the internal electrodes 121 and 122 in the first direction, respectively. The average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 can be measured by scanning the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average thickness td of the dielectric layer 111 can be measured by taking the average value after measuring the thickness at multiple points on one dielectric layer 111, for example, at 30 points equally spaced in the second direction. Similarly, the average thickness te of one internal electrode 121 and 122 can be measured by taking the average value after measuring the thickness at multiple points on one internal electrode 121 and 122, for example, at 30 points equally spaced in the second direction. The 30 equally spaced points can be specified in the capacitance forming section Ac. After performing such average value measurements for 10 dielectric layers 111 and 10 internal electrodes 121 and 122, and then measuring the average value, the average thickness td of the dielectric layer 111 and the average thickness te of the internal electrodes 121 and 122 can be further generalized.

[0047] The average thickness tc of the cover portions 112 and 113 is not particularly limited. The average thickness tc of the cover portions 112 and 113 may be, for example, 300 μm or less, 200 μm or less, 150 μm or less, or 50 μm or less. The average thickness tc of the cover portions 112 and 113 may be, for example, 5 μm or more, 10 μm or more, or 30 μm or more. Here, the average thickness tc of the cover portions 112 and 113 refers to the average thickness of the first cover portion 112 and the second cover portion 113, respectively.

[0048] The average thickness tc of the cover portions 112 and 113 can represent the average size of the cover portions 112 and 113 in the first direction, and can be the average value of the size in the first direction measured at five equally spaced points in the cross-section of the main body 110 in the first and second directions.

[0049] The average thickness tm of the margin portions 114 and 115 is not particularly limited. The average thickness tm of the margin portions 114 and 115 may be, for example, 150 μm or less, 100 μm or less, 20 μm or less, or 15 μm or less. The average thickness tm of the margin portions 114 and 115 may be, for example, 5 μm or more, 10 μm or more, or 30 μm or more. Here, the average thickness tm of the margin portions 114 and 115 refers to the average thickness of the first margin portion 114 and the second margin portion 115, respectively.

[0050] The average thickness tm of the margin portions 114 and 115 can represent the average size of the margin portions 114 and 115 in the third direction, and can be the average value of the size in the third direction measured at five equally spaced points in the cross-section of the main body 110 in the first and third directions.

[0051] The following describes an example of a method for forming a stacked electronic component 100.

[0052] First, prepare the ceramic powder for forming the dielectric layer 111. The ceramic powder is, for example, (Ca 1-x Sr x )(Zr 1-y Ti y)O3(0≦x≦0.5, 0≦y≦0.5). The above ceramic powder can be synthesized using methods such as the solid-phase method, the sol-gel method, or the hydrothermal synthesis method, but the present invention is not limited thereto. Next, the prepared ceramic powder is dried and pulverized, then mixed with an organic solvent such as ethanol, a binder such as polyvinyl butyral, and other minor components to produce a ceramic slurry. The ceramic slurry is then applied to a carrier film and dried to provide a ceramic green sheet.

[0053] Next, an internal electrode pattern is formed by printing a conductive paste for internal electrodes, containing metal powder, a binder, an organic solvent, etc., onto a ceramic green sheet to a predetermined thickness using a screen printing method or gravure printing method.

[0054] Subsequently, after peeling the ceramic green sheet with the printed internal electrode pattern from the carrier film, a predetermined number of layers are laminated and pressed together to form a ceramic laminate. A predetermined number of ceramic green sheets without the internal electrode pattern can be laminated on the upper and lower parts of the ceramic laminate to form cover portions 112 and 113 after firing. Then, the ceramic laminate can be cut to have a predetermined chip size, and the cut chips can be fired at a temperature of 1000°C to 1400°C to form the main body 110.

[0055] Next, external electrodes 131 and 132 are formed. The base electrode layers 131a and 132a can be formed by dipping the main body 110 into a conductive paste containing metal powder, glass frit, binder, and organic solvent, and then firing the conductive paste at a temperature of 500°C to 900°C. If the base electrode layers 131a and 132a have a configuration in which a fired electrode layer and a resin electrode layer are sequentially laminated, the resin electrode layer can be formed by applying a conductive resin composition containing metal powder, resin, binder, and organic solvent, and then curing it at a temperature of 250°C to 550°C.

[0056] The plating layers 131b and 132b can be formed, for example, by electroplating and / or electroless plating.

[0057] (Examples) To evaluate the heat dissipation characteristics, ESL, HALT reliability, and crack frequency of multilayer electronic components based on the relationships between T, L, and W described above, sample chips numbered 1 to 6 were prepared. Sample chip number 1 was fabricated to a size 3225 (length: approximately 3.2 ± 0.3 mm, width: approximately 2.5 ± 0.3 mm, thickness: approximately 2.5 ± 0.3 mm).

[0058] The heat generation of each sample chip was evaluated. First, sample chip No. 1 was placed on a hot plate at 105°C. Next, a rated voltage was applied to the sample chip at 70kHz using an amplifier. While observing the sample chip with a thermal imaging camera, the AC voltage applied to the sample chip was measured with an IV analyzer until the hot plate temperature reached 125°C. The AC voltage values ​​applied to sample chips No. 2 to No. 6 were evaluated, with the AC voltage value applied to sample chip No. 1 set as 100%, and are listed in Table 1 below.

[0059] Furthermore, ESL evaluation was performed. An impedance analyzer (E4990A, E4991B) was used to measure the AC signal in sweep mode in the frequency range of 100 kHz to 3 GHz. ESL was calculated as the average of the inductance values ​​from the magnetic resonance frequency (SRF) to the end frequency. The ESL values ​​of sample chips 2 to 6 were evaluated, with the ESL value measured for sample chip 1 set as 100%, and are listed in Table 1 below.

[0060] Furthermore, accelerated lifetime evaluation (HALT) was performed on the sample chips for each sample number. For each of the 400 sample chips from sample numbers 1 to 6, accelerated lifetime evaluation was performed for 24 hours under conditions of 125°C and 1.2Vr, and then the insulation resistance was 10 4A failure was determined if the resistance decreased to below Ω or if a short circuit occurred due to burnt.

[0061] Furthermore, crack frequency evaluation was performed. Cross-sections in the first and second directions, or the first and third directions, of 100 sample chips each from sample numbers 1 to 6 were analyzed using an optical microscope. The number of sample chips with cracks or delamination was measured and recorded in Table 1 below.

[0062] [Table 1]

[0063] Referring to Table 1, it can be seen that for samples 2 and 3, where T / L is less than 1.25, the heat dissipation characteristics are not improved compared to sample 1, and in the case of sample 2, the high-temperature lifetime is shorter than that of sample 1. Furthermore, for sample 6, where T / L is greater than 1.5, it can be seen that cracks occur due to an increase in the number of layers of internal electrodes.

[0064] On the other hand, in the case of samples 4 and 5, it can be confirmed that when the T / L ratio is between 1.25 and 1.5, the heat dissipation characteristics, ESL characteristics, and high-temperature lifetime characteristics are all improved compared to sample 1, and no crack defects occur. This confirms that the reliability of multilayer electronic components is improved when the T / L ratio is between 1.25 and 1.5.

[0065] In particular, in the case of sample number 7, where T / L is 1.25 but L / W is greater than 0.8, it was confirmed that although the ESL characteristics were improved compared to sample number 1, the heat dissipation characteristics were not improved. This indicates that the improvement effect on heat dissipation characteristics in the present invention becomes even more pronounced when T / L is between 1.25 and 1.5, and at the same time W is greater than L, or more preferably L / W is 0.8 or less.

[0066] Figures 5 to 7 schematically show stacked electronic components according to other embodiments of the present invention and are cross-sectional views corresponding to Figure 2.

[0067] Hereinafter, with reference to Figures 5 to 7, stacked electronic components 100a, 100b, and 100c according to other embodiments of the present invention will be described. For components that are the same as or similar to the stacked electronic component 100 described in Figures 1 to 4, the same or similar reference numerals will be used, and redundant explanations will be omitted.

[0068] Referring to Figure 5, the structure may include a first internal electrode 121a exposed on the third surface and a second internal electrode 122a exposed on the fourth surface. The first internal electrode 121a and the second internal electrode 122a may be arranged alternately with respect to the dielectric layer 111.

[0069] The body 110a of the stacked electronic component 100a may include a first dummy electrode 125 that is spaced apart from the second internal electrode 122a in a second direction and exposed on a third surface, and a second dummy electrode 126 that is spaced apart from the first internal electrode 121a in a second direction and exposed on a fourth surface.

[0070] Although the dummy electrodes 125 and 126 do not contribute to capacitance formation of the multilayer electronic component 100a, their exposure to the third and fourth surfaces can contribute to improving the heat dissipation characteristics of the multilayer electronic component 100a.

[0071] The main body 110a may include a first shielding layer 127 disposed on the cover portions 112 and 113 and exposed on a third surface, and a second shielding layer 128 disposed on the cover portions 112 and 113 and exposed on a fourth surface. The shielding layers 127 and 128 may be disposed on the first cover portion 112 and the second cover portion 113, respectively. The shielding layers 127 and 128 can serve to prevent arc discharge of the multilayer electronic component 100a.

[0072] The drawings show that one first and one second shield layer 127, 128 are arranged in each of the cover portions 112, 113. However, the present invention is not limited thereto, and multiple first and second shield layers 127, 128 may be arranged in each of the cover portions 112, 113. The shield layers 127, 128 may include, for example, the same material as the internal electrodes 121, 122.

[0073] Referring to Figure 6, the internal electrodes 121b, 122b, and 123b can include a first internal electrode 121b, a second internal electrode 122b, and a third internal electrode 123b. For example, the internal electrodes 121b, 122b, and 123b can include a first group of internal electrodes and a second group of internal electrodes that are alternately arranged with respect to the dielectric layer 111.

[0074] The first internal electrode group described above may include a first internal electrode 121b exposed on the third surface, and a second internal electrode 122b positioned at a distance from the first internal electrode 121b in the second direction and exposed on the fourth surface. The second internal electrode group described above may include a third internal electrode 123b positioned at a distance from the third and fourth surfaces.

[0075] The third internal electrode 123b can overlap with a portion of the first internal electrode 121b and a portion of the second internal electrode 122b in the first direction. That is, the main body 110b can have a structure in which the capacitance forming portion Ac is divided into two parts by including the third internal electrode 123b, which is a floating electrode that is not exposed on either of the third or fourth surfaces.

[0076] The stacked electronic component 100b can increase the number of first and second internal electrodes 121b, 122b exposed on the third and fourth surfaces via floating electrodes, thereby improving the heat dissipation characteristics of the stacked electronic component 100b.

[0077] Referring to Figure 7, the internal electrodes 121c, 122c, 123c1, 123c2, and 123c3 may include a first internal electrode 121c, a second internal electrode 122c, a third internal electrode 123c1, a fourth internal electrode 123c2, and a fifth internal electrode 123c3. For example, the internal electrodes 121c, 122c, 123c1, 123c2, and 123c3 may include a first group of internal electrodes and a second group of internal electrodes that are alternately arranged with respect to the dielectric layer 111.

[0078] The first internal electrode group described above includes a first internal electrode 121c exposed on the third surface, a second internal electrode 122c spaced apart from the first internal electrode 121c in the second direction and exposed on the fourth surface, and a third internal electrode 121c1 positioned between the first and second internal electrodes 121c and 122c.

[0079] The above-mentioned second group of internal electrodes may include fourth and fifth internal electrodes 123c2 and 123c3 that are spaced apart from the third and fourth surfaces and spaced apart from each other in the second direction.

[0080] The fourth internal electrode 123c2 can overlap with a part of the first internal electrode 121c and a part of the third internal electrode 121c1 in the first direction, and the fifth internal electrode 123c3 can overlap with a part of the second internal electrode 122c and a part of the third internal electrode 123c1 in the first direction. In other words, the main body 110c can have a structure in which the capacitance forming section Ac is divided into four parts by including the third to fifth internal electrodes 123c1, 123c2, and 123c3, which are floating electrodes that are not exposed on either of the third or fourth surfaces.

[0081] The stacked electronic component 100c can increase the number of first and second internal electrodes 121c, 122c exposed on the third and fourth surfaces via floating electrodes, thereby improving the heat dissipation characteristics of the stacked electronic component 100c.

[0082] The present invention is not limited by the embodiments described above or the accompanying drawings, but is limited by the claims provided herein. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0083] Furthermore, the expression "one embodiment" does not mean that each embodiment is the same as another, but is provided to highlight and explain the unique and distinct characteristics of each embodiment. However, the above-presented embodiments do not preclude their realization in combination with the features of other embodiments. For example, even if a matter described in one embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description in the other embodiment that contradicts or is contrary to that matter.

[0084] Furthermore, expressions such as "first," "second," etc., are used to distinguish one component from another, and do not limit the order and / or importance of such components. In some cases, within the scope of the rights, the first component may be named the second component, and similarly, the second component may be named the first component. [Explanation of Symbols]

[0085] 100, 100a, 100b, 100c: Stacked electronic components 110, 110a, 110b, 110c: Main unit 111: Dielectric layer 112, 113: Cover section 114, 115: Margin section 121, 122, 121a, 122a, 121b, 122b, 123b, 121c, 122c, 123c1, 123c2, 123c3: Internal electrode 125, 126: Dummy electrodes 127, 128: Shield layer 131, 132: External electrode 131a, 132a: Base electrode layer 131b, 132b: Plating layer

Claims

1. A stacked electronic component, A body including first and second surfaces facing each other in a first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and facing each other in a third direction, and including a dielectric layer and internal electrodes arranged alternately with the dielectric layer in the first direction, The external electrodes are arranged on the third and fourth surfaces, respectively, A multilayer electronic component in which, when the maximum size of the multilayer electronic component in the first direction is T, the maximum size of the multilayer electronic component in the second direction is L, and the maximum size of the multilayer electronic component in the third direction is W, W > L and 1.25 ≤ T / L ≤ 1.

5.

2. The stacked electronic component according to claim 1, wherein T and L satisfy 1.3 ≤ T / L ≤ 1.

4.

3. The stacked electronic component according to claim 1, wherein L and W satisfy L / W ≤ 0.

8.

4. The stacked electronic component according to claim 1, wherein L and W satisfy L ≥ 2.5 mm and W ≥ 3.2 mm.

5. The multilayer electronic component according to claim 1, wherein the ratio of the maximum size of the internal electrode in the third direction to W is 0.7 or more and 0.9 or less.

6. The stacked electronic component according to claim 1, wherein the average thickness of the internal electrodes is 1.0 μm or more.

7. The internal electrodes include a first internal electrode exposed on the third surface and a second internal electrode exposed on the fourth surface, and the first and second internal electrodes are arranged alternately with respect to the dielectric layer. The stacked electronic component according to claim 1, wherein the main body further includes a first dummy electrode spaced apart from the second internal electrode in the second direction and exposed on the third surface, and a second dummy electrode spaced apart from the first internal electrode in the second direction and exposed on the fourth surface.

8. The internal electrodes include a first group of internal electrodes and a second group of internal electrodes that are arranged alternately with respect to the dielectric layer in between. The first internal electrode group includes a first internal electrode exposed on the third surface, and a second internal electrode spaced apart from the first internal electrode in the second direction and exposed on the fourth surface. The second group of internal electrodes includes a third internal electrode that is spaced apart from the third and fourth surfaces. The stacked electronic component according to claim 1, wherein the third internal electrode overlaps with a portion of the first internal electrode and a portion of the second internal electrode in a first direction.

9. The internal electrodes include a first group of internal electrodes and a second group of internal electrodes that are arranged alternately with respect to the dielectric layer in between. The first internal electrode group includes a first internal electrode exposed on the third surface, a second internal electrode spaced apart from the first internal electrode in the second direction and exposed on the fourth surface, and a third internal electrode positioned between the first and second internal electrodes. The second internal electrode group includes fourth and fifth internal electrodes that are spaced apart from the third and fourth surfaces and spaced apart from each other in the second direction. The fourth internal electrode overlaps with a portion of the first internal electrode and a portion of the third internal electrode in the first direction. The stacked electronic component according to claim 1, wherein the fifth internal electrode overlaps with a portion of the second internal electrode and a portion of the third internal electrode in the first direction.

10. The dielectric layer is (Ca １－ｘ Sr ｘ ) (Zr １－ｙ Ti ｙ ) O ３ A stacked electronic component according to claim 1, including (0 ≤ x ≤ 0.5, 0 ≤ y ≤ 0.5).

11. The multilayer electronic component according to claim 1, wherein the capacitance of the multilayer electronic component is 10 nF or more.

Images