Multilayer electronic components

Abstract

One of the problems that this invention aims to solve is to provide a multilayer electronic component that has excellent dielectric properties while also having improved resistivity. [Solution] A stacked electronic component according to one embodiment of the present invention includes a body including a dielectric layer and internal electrodes, and external electrodes disposed on the body, wherein the dielectric layer includes a core that does not contain donor elements and acceptor elements, and core-shell dielectric crystal grains with a shell structure that covers at least a part of the core and includes the donor elements, acceptor elements and titanium (Ti), and when the atomic percentage of the donor elements contained in the shell is Ds and the atomic percentage of the acceptor elements contained in the shell is As, based on the atomic percentage of titanium (Ti) contained in the shell being 100 at%, the following can be satisfied: 2 at% ≤ Ds ≤ 13 at% and 1 at% ≤ As ≤ 13 at%.

Description

[Technical Field]

[0001] This invention relates to a stacked electronic component. [Background technology]

[0002] A multilayer ceramic capacitor (MLCC), a type of multilayer electronic component, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as liquid crystal displays (LCDs), plasma display panels (PDPs), computers, smartphones, and mobile phones, and plays the role of charging or discharging electricity.

[0003] Such multilayer ceramic capacitors can be used as components in various electronic devices due to their advantages of being small, yet guaranteeing high capacitance, and being easy to implement. As various electronic devices such as computers and mobile devices become smaller and more powerful, the demand for smaller and higher-capacitance multilayer ceramic capacitors is increasing.

[0004] In response to these demands, the types and compositions of dielectrics are being actively developed, and research on materials that exhibit giant dielectric constants is also progressing actively. In particular, there has recently been research attempting to achieve giant dielectric constants by adding donor and acceptor elements to the dielectric to form defect clusters. However, giant dielectric constant materials based on defect clusters have limiting characteristics such as high dielectric loss and low resistivity, and are still constrained from commercialization. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2018-118878 [Overview of the project] [Problems that the invention aims to solve]

[0006] One of the problems that this invention aims to solve is to provide a multilayer electronic component that has excellent dielectric properties while also having improved resistivity.

[0007] However, some of the problems that the present invention aims to solve are not limited to those described above and can be more easily understood in the process of describing specific embodiments of the present invention. [Means for solving the problem]

[0008] A stacked electronic component according to one embodiment of the present invention includes a body including a dielectric layer and internal electrodes, and external electrodes disposed on the body, wherein the dielectric layer includes a core that does not contain a donor element and an acceptor element, and core-shell dielectric crystal grains with a shell structure that covers at least a part of the core and includes the donor element, the acceptor element and titanium (Ti), and when the atomic percentage of the donor element contained in the shell is Ds and the atomic percentage of the acceptor element contained in the shell is As, based on the atomic percentage of titanium (Ti) contained in the shell being 100 at%, the following can be satisfied: 2 at% ≤ Ds ≤ 13 at% and 1 at% ≤ As ≤ 13 at%.

[0009] A stacked electronic component according to another embodiment of the present invention includes a body including a dielectric layer containing titanium (Ti) and internal electrodes, and external electrodes disposed on the body, wherein the dielectric layer includes a core that does not contain donor elements and acceptor elements, and core-shell dielectric crystal grains with a shell structure that cover at least a part of the core and contain the donor elements and acceptor elements, and when Dm is the number of moles of donor elements per 100 moles of titanium (Ti) contained in the dielectric layer, and Am is the number of moles of acceptor elements per 100 moles of titanium (Ti) contained in the dielectric layer, the following conditions can be satisfied: 0.5 moles ≤ Dm ≤ 4 moles and 0.25 moles ≤ Am ≤ 4 moles. [Effects of the Invention]

[0010] One of the effects of the present invention is that the dielectric properties and specific resistance properties of the multilayer electronic component have been improved.

[0011] However, the diverse and beneficial advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0012] [Figure 1] It is a diagram schematically showing a perspective view of a multilayer electronic component according to an embodiment of the present invention. [Figure 2] It is a diagram schematically showing a separated perspective view showing the laminated structure of the internal electrodes. [Figure 3] It is a diagram schematically showing a cross-sectional view taken along the line I-I' of FIG. 1. [Figure 4] It is a diagram schematically showing a cross-sectional view taken along the line II-II' of FIG. 1. [[ID=​​​​​​​​​​​​​​​Embodiments of the present invention will be described below with reference to specific embodiments and accompanying drawings. However, embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to give a more complete explanation of the present invention to a person of the ordinary skill. Accordingly, the shapes and sizes of elements in the drawings may be exaggerated for clearer explanation, and elements indicated by the same reference numerals in the drawings are the same elements.

[0014] Furthermore, in order to clearly illustrate the present invention in the drawings, parts unrelated to the explanation have been omitted, and the size and thickness of each component shown in the drawings are arbitrarily shown for the convenience of explanation; therefore, the present invention is not necessarily limited to what is shown. Components with the same function within the scope of the same concept are described using the same reference numerals. Moreover, throughout the specification, when a part "includes" a certain component, this does not exclude other components unless otherwise stated, but rather means that it may further include other components.

[0015] In the drawing, the first direction can be defined as the lamination direction or the thickness T direction, the second direction as the length L direction, and the third direction as the width W direction.

[0016] Multilayer electronic components Figure 1 schematically shows a perspective view of a stacked electronic component according to one embodiment of the present invention, Figure 2 schematically shows a separated perspective view showing the stacked structure of the internal electrodes, Figure 3 schematically shows a cross-sectional view along the line I-I' in Figure 1, Figure 4 schematically shows a cross-sectional view along the line II-II' in Figure 1, Figure 5 schematically shows a cross-sectional view along the line II-II' in Figure 1 according to another embodiment of the present invention, and Figure 6 schematically shows an enlarged view of region P in Figure 3.

[0017] Hereinafter, with reference to Figures 1 to 6, a multilayer electronic component according to one embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that utilize dielectric compositions, such as inductors, piezoelectric elements, varistors, or thermistors.

[0018] A stacked electronic component 100 according to one embodiment of the present invention includes a body 110 including a dielectric layer 111 and internal electrodes 121, 122, and external electrodes 131, 132 disposed on the body 110, wherein the dielectric layer 111 includes a core 21 that does not contain donor elements and acceptor elements, and core-shell dielectric crystal grains 20 having a shell 22 structure that covers at least a part of the core 21 and contains the donor elements, acceptor elements and titanium (Ti), and when the atomic percentage of the donor elements contained in the shell 22 is Ds and the atomic percentage of the acceptor elements contained in the shell 22 is As, based on the atomic percentage of titanium (Ti) contained in the shell 22 being 100 at%, the values ​​2 at% ≤ Ds ≤ 13 at% and 1 at% ≤ As ≤ 13 at% can be satisfied.

[0019] A stacked electronic component 100 according to another embodiment of the present invention includes a body 110 including a dielectric layer 111 containing titanium (Ti) and internal electrodes 121 and 122, and external electrodes 131 and 132 disposed on the body 110, wherein the dielectric layer 111 includes a core 21 that does not contain donor elements and acceptor elements, and core-shell dielectric crystal grains 22 having a shell structure that covers at least a part of the core 21 and contains the donor elements and acceptor elements, and when Dm is the number of moles of donor elements per 100 moles of titanium (Ti) contained in the dielectric layer 111, and Am is the number of moles of acceptor elements per 100 moles of titanium (Ti) contained in the dielectric layer 111, the following conditions can be satisfied: 0.5 moles ≤ Dm ≤ 4 moles and 0.25 moles ≤ Am ≤ 4 moles.

[0020] The main body 110 may have dielectric layers 111 and internal electrodes 121 and 122 stacked alternately.

[0021] More specifically, the main body 110 may include a capacitance forming section Ac which includes a first internal electrode 121 and a second internal electrode 122 disposed inside the main body 110 and arranged alternately to face each other with a dielectric layer 111 in between, thereby forming a capacitance.

[0022] There are no particular limitations on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be a hexahedron or a similar shape. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 is not a perfectly straight hexahedron, but can be substantially hexahedron-shaped.

[0023] The main body 110 may have a first and second surface 1, 2 that face each other in the first direction, a third and fourth surface 3, 4 that face each other in the second direction, a fifth and sixth surface 5, 6 that face each other in the third direction, and are connected to the first to fourth surfaces 1, 2, 3, 4.

[0024] The multiple dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0025] The raw materials used to form the dielectric layer 111 are not limited as long as sufficient capacitance can be obtained, and here, the raw materials used to form the dielectric layer 111 can mean the main components of the dielectric layer 111.

[0026] For example, barium titanate (BaTiO3), strontium titanate (SrTiO3), titanium dioxide (TiO2), etc. can be used. Barium titanate (BaTiO3) can contain BaTiO3-based ceramic particles, and examples of BaTiO3-based ceramic particles include BaTiO3, and BaTiO3 in which Ca (calcium), Zr (zirconium), etc. are partially dissolved (BaTiO3). 1-x Ca x )TiO3(0 <x<1)、Ba(Ti1-y Ca y )O3(0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3(0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3(0 < y < 1) and the like. Strontium titanate (SrTiO3)-based substances can contain SrTiO3-based ceramic particles, and SrTiO3, (Sr 1-x Ca x )TiO3(0 < x < 1), Sr(Ti 1-y Ca y )O3(0 < y < 1), (Sr 1-x Ca x )(Ti 1-y Zr y )O3(0 < x < 1, 0 < y < 1) or Sr(Ti 1-y Zr y )O3(0 < y < 1) and the like.

[0027] In the present invention, the "main component" can mean a component that occupies a relatively large weight ratio or atomic number ratio compared to other components, and can mean a component that exceeds 50 wt% based on the weight of the entire composition or the entire dielectric layer, exceeds 50 mol% based on the number of atoms, or exceeds 50 mol% based on the number of moles.

[0028] Furthermore, as a more specific example of a method for measuring the elemental content of each component of the stacked electronic component 100 in the present invention, the components can be analyzed using the energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, an analytical sample is prepared by thinning it using a focused ion beam (FIB) device in the area to be measured. Then, the damage layer on the surface of the thinned sample is removed using xenon (Xe) or argon (Ar) ion milling, and then each component to be measured is mapped from the image obtained using SEM-EDS, TEM-EDS, or STEM-EDS, and qualitative / quantitative analysis is performed. In this case, the qualitative / quantitative analysis graphs for each component can be expressed in terms of the content of each element, for example, mass percentage (wt%), atomic percentage (at%), or mole percentage (mol%), and can also represent the content of other specific components relative to the content of a particular component.

[0029] Another method involves crushing the chip to select the region to be measured, and then analyzing the specific components of the selected region containing dielectric microstructure using instruments such as an inductively coupled plasma spectrometer (ICP-OES) or inductively coupled plasma mass spectrometer (ICP-MS).

[0030] Furthermore, the raw materials for forming the dielectric layer 111 can include particles such as barium titanate (BaTiO3), to which various ceramic additives, organic solvents, binders, dispersants, etc., can be added according to the purpose of the present invention.

[0031] On the other hand, in order to distinguish it from the dielectric layers included in the cover portions 112, 113 and the side margin portions 114, 115 described later, the dielectric layer included in the capacitance forming portion Ac can be defined as the first dielectric layer, the dielectric layers included in the cover portions 112, 113 can be defined as the second dielectric layer, and the dielectric layers included in the side margin portions 114, 115 can be defined as the third dielectric layer. However, unless otherwise contradictory to the present invention, the contents of the first dielectric layer 111 can be described as the dielectric layer 111.

[0032] Furthermore, since the first to third dielectric layers can be formed using dielectric material, they can include a dielectric microstructure after firing. The dielectric microstructure can include multiple dielectric crystal grains, grain boundaries arranged between adjacent dielectric crystal grains, and n-weighted points arranged at points where three or more grain boundaries meet, and can include multiple dielectric crystal grains, grain boundaries, and n-weighted points.

[0033] The dielectric layer 111 may include core-shell dielectric crystal grains 20 having a core-shell structure. However, it is not limited to this, and may also include dielectric crystal grains 10 that do not have a core-shell structure.

[0034] The core-shell dielectric crystal grain 20 may include a core 21 that does not contain donor elements and acceptor elements, and a shell 22 structure that covers at least a portion of the core 21 and contains donor elements, acceptor elements and titanium (Ti).

[0035] Here, the donor element can mean a Group 5 element, and can include, for example, at least one of niobium (Nb), tantalum (Ta), and vanadium (V), preferably at least one of niobium (Nb) and tantalum (Ta), more preferably niobium (Nb).

[0036] The acceptor element can mean a group 2 element, a group 3 element, a group 13 element, or a lanthanum group element, and can include, for example, at least one of aluminum (Al), gallium (Ga), magnesium (Mg), zinc (Zn), scandium (Sc), indium (In), ytterbium (Yb), erbium (Er), and europium (Eu), preferably at least one of magnesium (Mg) and indium (In), more preferably magnesium (Mg).

[0037] The types of donor and acceptor elements can refer to, but are not limited to, the elements contained in the dielectric layer that play the roles of donor and acceptor, respectively.

[0038] Excellent dielectric properties can only be exhibited when donor and acceptor elements are included in the dielectric at appropriate concentrations. For donor elements, the size of the elements that can be included at appropriate concentrations is preferably 70 pm to 85 pm based on the ionic radius, and for acceptor elements, it is preferably 66 pm to 110 pm based on the ionic radius.

[0039] Furthermore, if at least one of barium titanate (BaTiO3) and strontium titanate (SrTiO3) is used as the main component raw material for the dielectric layer 111, the core 21 and shell 22 may contain elements of the main component raw material, such as barium (Ba), strontium (Sr), and titanium (Ti).

[0040] More specifically, in the core-shell dielectric crystal grain 20, the core 21 may not contain donor elements and acceptor elements.

[0041] Here, the statement that core 21 does not contain donor and acceptor elements means that when EDS analysis is performed, the donor and acceptor elements are not detected, respectively. However, this is not limited to this, and it may also include cases where the atomic percentages of the donor and acceptor elements are less than 1.0 at%, more preferably less than 0.6 at%, based on the atomic percentage of titanium (Ti) contained in core 21 being 100 at%, respectively.

[0042] In this case, the atomic percentage (at%) of the elements contained in core 21 can be determined by performing EDS analysis on four points within the core 21 region and then averaging the atomic percentage (at%) of each element at those four points, but this is not the only method.

[0043] To explain in more detail using Figures 7(a) to 7(e) as examples, Figure 7(a) is an image of the entire 111 cross-section taken by TEM, Figure 7(b) is an image of the same region mapped with barium (Ba) after EDS analysis, Figure 7(c) is an image of the same region mapped with titanium (Ti) after EDS analysis, Figure 7(d) is an image of the same region mapped with niobium (Nb) after EDS analysis, and Figure 7(e) is an image of the same region mapped with magnesium (Mg) after EDS analysis.

[0044] Referring to Figure 7(d), the region where niobium (Nb) is not detected can be interpreted as the core 21, and the region where niobium (Nb) is detected as the shell 22. Similarly, referring to Figure 7(e), the region where magnesium (Mg) is not detected can be interpreted as the core 21, and the region where magnesium (Mg) is detected as the shell 22. On the other hand, even if niobium (Nb) or magnesium (Mg) elements are mapped using EDS analysis, it may not be easy to distinguish between the core 21 and the shell 22 due to noise. In such cases, the core 21 and the shell 22 can be distinguished based on the aforementioned atomic percentage (at%) values ​​using qualitative / quantitative point analysis.

[0045] More specifically, one core-shell dielectric crystal grain 20 was selected from among the core-shell dielectric crystal grains 20 shown in Figures 7(a) to (e), and TEM-EDS analysis was performed on four locations on the core 21. When the average elemental percentages (at%) of niobium (Nb) and magnesium (Mg) were calculated at the four detected locations, the niobium (Nb) was 0.59 at%, and the magnesium (Mg) was 0.58 at%.

[0046] On the other hand, the shell 22 may contain donor elements, acceptor elements, and titanium (Ti).

[0047] Here, the statement that the shell 22 contains a donor element and an acceptor element means that at least one of the donor element and the acceptor element has substituted for at least one of the elemental positions in the main component of the shell 22, excluding the oxygen element (O).

[0048] To give a more specific example, the donor element can be substituted at the titanium (Ti) position in barium titanate (BaTiO3) and strontium titanate (SrTiO3). The acceptor element can be substituted at both the barium (Ba) position and the titanium (Ti) position (preferably at the titanium (Ti) position) in the case of barium titanate (BaTiO3), and at both the strontium (Sr) position and the titanium (Ti) position (preferably at the titanium (Ti) position) in the case of strontium titanate (SrTiO3).

[0049] In this case, using the atomic percentage of titanium (Ti) contained in the shell 22 as a reference (100 at%), if we let Ds be the atomic percentage of the donor element contained in the shell 22 and As be the atomic percentage of the acceptor element contained in the shell 22, then the following conditions can be satisfied: 2 at% ≤ Ds ≤ 13 at% and 1 at% ≤ As ≤ 13 at%.

[0050] Since shell 22 satisfies 2at% ≤ Ds ≤ 13at% and 1at% ≤ As ≤ 13at%, the dielectric loss (Dissipation Factor, DF) is 10.0% or less, and the dielectric constant is 7 × 10⁻⁶. 3 The above is true, and the resistivity (Ω·cm) is 10 10 It can be greater than or equal to Ω·cm.

[0051] In this case, the atomic percentage (at%) of the elements contained in the shell 22 can be determined by performing EDS analysis on 8 points within the shell 22 region, and then averaging the atomic percentage (at%) of each element at those 8 points, but this method is not the only way to obtain the atomic percentage (at%) of the elements contained in the shell 22.

[0052] To give a more specific example, one core-shell dielectric crystal grain 20 was selected from among the core-shell dielectric crystal grains 20 shown in Figures 7(a) to (e), and TEM-EDS analysis was performed on eight locations on that shell 22. When the average elemental percentages (at%) of niobium (Nb) and magnesium (Mg) were calculated at the eight detected locations, the value for niobium (Nb) was 6.63 at%, and the value for magnesium (Mg) was 3.23 at%.

[0053] On the other hand, if Ds is less than 2 at%, the resistivity may be excellent and dielectric loss may be low, but the dielectric constant may not be excellent. If Ds is greater than 13 at%, the dielectric constant may be excellent and dielectric loss (DF) may be low, but the resistivity may not be excellent.

[0054] Furthermore, if As is less than 1 at%, the dielectric constant may be excellent and dielectric loss (DF) may be low, but the resistivity may not be excellent. If As is greater than 13 at%, the dielectric constant may be excellent, but the resistivity may not be excellent.

[0055] On the other hand, if the core 21 and shell 22 do not contain donor and acceptor elements, the dielectric loss (DF) may be low and the resistivity may be excellent, but the dielectric constant may not be good.

[0056] Furthermore, if the core 21 and shell 22 contain donor and acceptor elements, they may have excellent dielectric constant and low dielectric loss (DF), but may not have excellent resistivity characteristics.

[0057] In one embodiment of the present invention, the Ds and As of the shell 22 can satisfy As ≤ Ds, and more preferably, As ≤ Ds ≤ 3 × As. In other words, the ratio (Ds:As) of the atomic percentage of the donor element (Ds) relative to 100 at% titanium (Ti) contained in the shell 22 to the atomic percentage of the acceptor element (As) relative to 100 at% titanium (Ti) contained in the shell 22 can satisfy 1:1 to 3:1.

[0058] By satisfying the atomic percentage (at%) of the donor element and the acceptor element such that As ≦ Ds, the dielectric loss (DF) can be reduced, and the dielectric constant and resistivity characteristics can be excellent.

[0059] When the atomic percentage (at%) of the donor element and the acceptor element is Ds < As, there is a possibility that the dielectric constant is not excellent.

[0060] On the other hand, when the number of moles of the donor element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is Dm, and the number of moles of the acceptor element with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 is Am, 0.5 mol ≦ Dm ≦ 4 mol and 0.25 mol ≦ Am ≦ 4 mol can be satisfied.

[0061] By the dielectric layer 111 satisfying 0.5 mol ≦ Dm ≦ 4 mol and 0.25 mol ≦ Am ≦ 4 mol, the dielectric loss (DF) can be reduced, and the dielectric constant and resistivity characteristics can be excellent.

[0062] On the other hand, when Dm is less than 0.5 mol, there is a possibility that the resistivity characteristics are excellent and the dielectric loss is small, but there is a possibility that the dielectric constant is not excellent. When Dm exceeds 4 mol, there is a possibility that the dielectric constant is excellent and the dielectric loss (DF) is small, but there is a possibility that the resistivity characteristics are not excellent.

[0063] Also, when Am is less than 0.25 mol, there is a possibility that the dielectric constant is excellent and the dielectric loss (DF) is small, but there is a possibility that the resistivity characteristics are not excellent. When Am exceeds 4 mol, the dielectric constant may be excellent, but there is a possibility that the resistivity is not excellent.

[0064] In one embodiment of the present invention, Dm and Am can satisfy Am ≦ Dm, and more preferably, Am ≦ Dm ≦ 3 × Am can be satisfied. In other words, the ratio (Dm:Am) of the number of moles of the donor element (Dm) with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 and the number of moles of the acceptor element (Am) with respect to 100 moles of titanium (Ti) contained in the dielectric layer 111 can satisfy 1:1 to 3:1.

[0065] When the number of moles of the donor element and the acceptor element satisfies Am ≦ Dm, the dielectric loss (DF) can be small and the dielectric constant and specific resistance characteristics can be excellent.

[0066] When the number of moles of the donor element is Dm < Am, the dielectric constant may not be excellent.

[0067] The thickness td of the dielectric layer 111 does not need to be particularly limited.

[0068] In order to ensure the reliability of the multilayer electronic component 100 under a high voltage environment, the thickness td of the dielectric layer may be 10.0 μm or less. Also, in order to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness td of the dielectric layer may be 3.0 μm or less. In order to more easily achieve ultra-miniaturization and high capacitance, the thickness td of the dielectric layer may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0069] At this time, the thickness td of the dielectric layer can be a concept including the thickness of at least one of the plurality of dielectric layers, or a concept including the thickness of all the dielectric layers.

[0070] Here, the thickness td of the dielectric layer can mean the thickness td of the dielectric layer disposed between the first and second internal electrodes 121 and 122.

[0071] On the other hand, the thickness td of the dielectric layer can mean the size of the dielectric layer 111 in the first direction.

[0072] Also, the thickness td of the dielectric layer can mean the average thickness td of one dielectric layer, or the average thickness td of a plurality of dielectric layers.

[0073] The average size of the dielectric layer 111 in the first direction can be measured by scanning the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, the average size of a single dielectric layer in the first direction can be said to be the average value calculated by measuring the size of a single dielectric layer in the first direction at 10 equally spaced points in the second direction in the scanned image. These 10 equally spaced points can be specified by the capacitance forming section Ac. Furthermore, by extending this measurement of average values ​​to 10 dielectric layers and measuring the average values, the average size of multiple dielectric layers in the first direction can be further generalized.

[0074] The internal electrodes 121 and 122 may be stacked alternately with the dielectric layer 111.

[0075] The internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the first and second internal electrodes 121 and 122 are arranged alternately so as to face each other across the dielectric layer 111 that constitutes the main body 110, and can be exposed on the third and fourth surfaces 3 and 4 of the main body 110, respectively.

[0076] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed via the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed via the fourth surface 4. The first external electrode 131 is positioned on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and the second external electrode 132 is positioned on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0077] In other words, the first internal electrode 121 is not connected to the second external electrode 132, but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131, but can be connected to the second external electrode 132. In this case, the first and second internal electrodes 121 and 122 can be electrically isolated from each other by the dielectric layer 111 placed in between.

[0078] On the other hand, the main body 110 can be formed by alternately stacking a first ceramic green sheet printed with a paste for the first internal electrode, which will become the first internal electrode 121, and a second ceramic green sheet printed with a paste for the second internal electrode, which will become the second internal electrode 122, and then firing them.

[0079] The materials used to form the internal electrodes 121 and 122 are not particularly limited, and any material with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 may include one or more of the following: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0080] Furthermore, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of the following onto a ceramic green sheet: nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. While screen printing or gravure printing can be used as the printing method for the conductive paste for internal electrodes, the present invention is not limited thereto.

[0081] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0082] To ensure the reliability of the multilayer electronic component 100 in a high-voltage environment, the thickness te of the internal electrodes may be 3.0 μm or less. Furthermore, to achieve miniaturization and high capacitance of the multilayer electronic component 100, the thickness te of the internal electrodes may be 1.0 μm or less. To more easily achieve ultra-miniaturization and high capacitance, the thickness te of the internal electrodes may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0083] Here, the internal electrode thickness te can be a concept that includes the thickness te of at least one of the multiple internal electrodes, or a concept that includes the thickness te of all internal electrodes.

[0084] Here, the thickness te of the internal electrode can represent the size of the internal electrodes 121 and 122 in the first direction.

[0085] Note that the thickness te of the internal electrode can represent the average thickness te of one internal electrode or the average thickness te of a plurality of internal electrodes.

[0086] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size of one internal electrode in the first direction at 10 equally spaced points in the second direction in the scanned image. The 10 equally spaced points can be specified in the capacitance forming portion Ac. Also, when the measurement of such an average value is extended to 10 internal electrodes to measure the average value, the average size of the plurality of internal electrodes in the first direction can be further generalized.

[0087] On the other hand, in one embodiment of the present invention, the thickness td of at least one of the plurality of dielectric layers and the thickness te of at least one of the plurality of internal electrodes can satisfy 2×te < td.

[0088] In other words, the thickness td of one dielectric layer may be greater than twice the thickness te of one internal electrode. Preferably, the average thickness td of the plurality of dielectric layers may be greater than twice the average thickness te of the plurality of internal electrodes.

[0089] Generally, for high-voltage electrical components, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) in a high-voltage environment.

[0090] Therefore, in order to prevent a decrease in dielectric breakdown voltage under high-voltage conditions, the dielectric layer thickness td can be increased by making it greater than twice the average thickness te of the internal electrodes. This increases the distance between internal electrodes, thereby improving the dielectric breakdown voltage characteristics.

[0091] If the average thickness td of the dielectric layer is less than or equal to twice the average thickness te of the internal electrodes, the dielectric breakdown voltage may decrease due to the thinness of the dielectric layer, which is the distance between the internal electrodes, and a short circuit between the internal electrodes may occur.

[0092] On the other hand, the main body 110 may include cover portions 112 and 113 that are positioned on both end surfaces (end-surfaces) of the capacity forming portion Ac in the first direction.

[0093] Specifically, it may include a first cover portion 112 positioned on one side of the volume-forming portion Ac in the first direction, and a second cover portion 113 positioned on the other side of the volume-forming portion Ac in the first direction. More specifically, it may include an upper cover portion 112 positioned on the upper part of the volume-forming portion Ac in the first direction, and a lower cover portion 113 positioned on the lower part of the volume-forming portion Ac in the first direction.

[0094] The first cover portion 112 and the second cover portion 113 can be formed by arranging or stacking a single second dielectric layer or two or more second dielectric layers in a first direction on the upper and lower surfaces of the capacitance forming portion Ac, respectively, and can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0095] The first cover portion 112 and the second cover portion 113 do not include internal electrodes 121 and 122 and may contain the same dielectric material as the first dielectric layer 111 of the capacitance forming portion. That is, the first cover portion 112 and the second cover portion 113 may contain ceramic material, for example, barium titanate (BaTiO3) based ceramic material.

[0096] The thickness tc of the cover portions 112 and 113 is not particularly limited, and in the following description of the thickness tc of the cover portions 112 and 113, it may refer to the respective thicknesses tc of the first cover portion 112 and the second cover portion 113.

[0097] However, in order to more easily achieve miniaturization and high capacity of stacked electronic components, the thickness tc of the cover portion may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0098] Here, the thickness tc of the cover portion can mean the size of the cover portions 112 and 113 in the first direction.

[0099] Furthermore, the thickness tc of the cover portion can mean the average thickness tc of the first and second cover portions 112 and 113, respectively, or the average thickness tc of the first and second cover portions 112 and 113.

[0100] The average size of the cover portion in the first direction can be measured by scanning the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the size in the first direction at 10 equally spaced points in the second direction in an image scanned from a single cover portion.

[0101] Furthermore, the average size of the cover portion in the first direction measured by the method described above can be substantially the same as the average size of the cover portion in the first direction in the cross-sections (first and third directions) of the main body 110.

[0102] On the other hand, the stacked electronic component 100 may include side margin regions 114' and 115' of the third direction region of the internal electrodes 121 and 122.

[0103] More specifically, the side margin regions 114' and 115' may include a first side margin region 114' located between the internal electrodes 121 and 122 and the fifth surface 5, and a second side margin region 115' located between the internal electrodes 121 and 122 and the sixth surface 6.

[0104] The side margin regions 114' and 115' can be defined as the regions between the end-surfaces of the first and second internal electrodes 121 and 122 in the third direction and the interface of the body 110, with respect to the cross-sections of the body 110 in the first and third directions, as shown in the figure.

[0105] The side margin regions 114' and 115' can refer to the ceramic green sheet region excluding the internal electrodes 121 and 122 when the paste for the internal electrodes is applied to the ceramic green sheet applied to the volume-forming portion Ac, excluding the areas where the side margin regions 114' and 115' are formed.

[0106] The side margin regions 114' and 115' essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0107] The first side margin region 114' and the second side margin region 115' do not include the internal electrodes 121 and 122 and may contain the same material as the first dielectric layer 111, for example, they may correspond to a part of the first dielectric layer 111. That is, the first side margin region 114' and the second side margin region 115' may contain a ceramic material, for example, a barium titanate (BaTiO3) based ceramic material.

[0108] On the other hand, the stacked electronic component 100 may include side margin portions 114 and 115 that are positioned on both end surfaces (end-surfaces) of the main body 110 in the third direction.

[0109] More specifically, the side margins 114 and 115 may include a first side margin 114 located on the fifth surface 5 of the main body 110, and a second side margin 115 located on the sixth surface 6 of the main body 110.

[0110] The side margin portions 114 and 115 can be formed by applying conductive paste to the ceramic green sheet applied to the capacitance forming portion Ac, except for the areas where the side margin portions 114 and 115 are formed, to form the internal electrodes 121 and 122. In order to suppress the step caused by the internal electrodes 121 and 122, the laminated internal electrodes 121 and 122 can be cut so that they are exposed on the fifth and sixth surfaces 5 and 6 of the main body 110, and then a single third dielectric layer or two or more third dielectric layers can be formed by arranging or laminating them in the third direction on both end surfaces (end-surfaces) of the capacitance forming portion Ac in the third direction.

[0111] The side margins 114 and 115 can essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0112] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and may contain the same material as the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 may contain a ceramic material, for example, a barium titanate (BaTiO3) based ceramic material.

[0113] The widths wm of the side margins 114 and 115 do not need to be particularly limited, and in the following explanation of the widths wm of the side margins 114 and 115, it may refer to the widths wm of the first side margin 114 and the second side margin 115, respectively.

[0114] However, in order to more easily achieve miniaturization and high capacitance of the stacked electronic component 100, the width wm of the side margin portion may be 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less for ultra-small products.

[0115] Here, the width wm of the side margin can represent the size of the side margins 114 and 115 in the third direction.

[0116] Furthermore, the width wm of the side margins 114 and 115 can mean the average width wm of the first and second side margins 114 and 115, respectively, or the average width wm of the first and second side margins 114 and 115.

[0117] The average size of the side margins 114 and 115 in the third direction can be measured by scanning the cross-sections of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at 10,000x magnification. More specifically, it can mean the average value calculated by measuring the size in the third direction at 10 equally spaced points in the first direction in an image scanned from one side margin.

[0118] One embodiment of the present invention describes a structure in which a stacked electronic component 100 has two external electrodes 131 and 132. However, the number and shape of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 or other purposes.

[0119] External electrodes 131 and 132 may be placed on the main body 110 and connected to internal electrodes 121 and 122.

[0120] More specifically, the external electrodes 131 and 132 may include first and second external electrodes 131 and 132 that are arranged on the third and fourth surfaces 3 and 4 of the main body 110, respectively, and connected to first and second internal electrodes 121 and 122, respectively. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0121] Furthermore, the external electrodes 131 and 132 may extend and be arranged on a portion of the first and second surfaces 1 and 2 of the main body 110, or on a portion of the fifth and sixth surfaces 5 and 6 of the main body 110. That is, the first external electrode 131 can be arranged on the third surface 3 of the main body 110 and on a portion of the first, second, fifth, and sixth surfaces 1, 2, 5, and 6 of the main body 110, and the second external electrode 132 can be arranged on the fourth surface 4 of the main body 110 and on a portion of the first, second, fifth, and sixth surfaces 1, 2, 5, and 6 of the main body 110.

[0122] On the other hand, the external electrodes 131 and 132 may be formed using any material that has electrical conductivity, such as metal, and the specific material may be determined by considering electrical properties, structural stability, etc., and may also have a multilayer structure.

[0123] For example, the external electrodes 131 and 132 may include an electrode layer placed on the main body 110 and a plating layer placed on the electrode layer. In this case, the electrode layer may include a first electrode layer placed on the main body and a second electrode layer placed on the first electrode layer, and the plating layer may include a first plating layer placed on the electrode layer and a second plating layer placed on the first plating layer, but is not limited to this. The details regarding the electrode layer and the plating layer will be explained in more detail below.

[0124] To give a more specific example for the electrode layers 131a, 132a, 131b, and 132b, the electrode layers 131a, 132a, 131b, and 132b may include first electrode layers 131a and 132a, which are fired electrodes containing a first conductive metal and glass, or second electrode layers 131b and 132b, which are resin-based electrodes containing a second conductive metal and resin.

[0125] Here, the conductive metal contained in the first electrode layers 131a and 132a can be called the first conductive metal, and the conductive metal contained in the second electrode layers 131b and 132b can be called the second conductive metal. In this case, the first conductive metal and the second conductive metal may be the same or different from each other, and if multiple conductive metals are included, only some of them may be the same conductive metal, but this is not particularly limited.

[0126] Furthermore, the electrode layers 131a, 132a, 131b, and 132b may be formed in a manner in which first electrode layers 131a and 132a, which are fired electrode layers, and second electrode layers 131b and 132b, which are resin-based electrode layers, are formed sequentially on the main body 110.

[0127] The electrode layers 131a, 132a, 131b, and 132b may be formed by transferring a sheet containing a conductive metal onto the main body, or by transferring a sheet containing a conductive metal onto a fired electrode. Alternatively, they may be formed by applying a conductive paste for external electrodes containing a conductive metal to the main body 110 and then firing it, or by dipping the main body 110 into a conductive paste for external electrodes containing a conductive metal, but are not limited to these methods.

[0128] As the conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b, a material with excellent electrical conductivity can be used. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0129] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, and 132b may have a two-layer structure including a first electrode layer 131a, 132a and a second electrode layer 131b, 132b. More specifically, the external electrodes 131 and 132 may include a first electrode layer 131a, 132a comprising a first conductive metal and glass, and a second electrode layer 131b, 132b disposed on the first electrode layers 131a, 132a and comprising a second conductive metal and resin.

[0130] The first electrode layers 131a and 132a, by containing glass, serve to improve bonding with the main body 110, while the second electrode layers 131b and 132b, by containing resin, serve to improve bending strength.

[0131] The first conductive metal contained in the first electrode layers 131a and 132a is not particularly limited as long as it is a material that can be electrically connected to the internal electrodes 121 and 122 for the formation of capacitance, and may include, for example, at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0132] The first electrode layers 131a and 132a can be formed by applying a conductive paste, which is made by adding glass frit to first conductive metal particles, and then firing it.

[0133] The second conductive metal contained in the second electrode layers 131b and 132b can serve to electrically connect with the first electrode layers 131a and 132a.

[0134] The second conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it is a material that can be electrically connected to the first electrode layers 131a and 132a, and may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0135] The second conductive metal contained in the second electrode layers 131b and 132b may include one or more spherical particles and flake-shaped particles. That is, the second conductive metal may consist only of flake-shaped particles, only of spherical particles, or in a mixed form of flake-shaped and spherical particles. Here, spherical particles may include forms that are not perfectly spherical, for example, forms with a ratio of the length of the long axis to the short axis (long axis / short axis) of 1.45 or less. Flake-shaped particles mean particles that are flat and elongated, and are not particularly limited, but for example, the ratio of the length of the long axis to the short axis (long axis / short axis) may be 1.95 or more. The lengths of the long axis and short axis of the spherical particles and flake-shaped particles can be measured from images obtained by scanning the cross-sections in the first and second directions, which are cut in the center of the third direction of the stacked electronic component, with a scanning electron microscope (SEM).

[0136] The resin contained in the second electrode layers 131b and 132b is not particularly limited as long as it can ensure bonding and absorb shock and can be mixed with the second conductive metal particles to make a paste; for example, it can include epoxy resins.

[0137] Furthermore, the second electrode layers 131b and 132b may further contain an intermetallic compound.

[0138] The inclusion of an intermetallic compound can further improve the electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound plays a role in improving electrical connectivity by linking multiple second conductive metal particles, and can also play a role in surrounding and connecting multiple second conductive metal particles to one another.

[0139] In this case, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, because the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal with a melting point lower than the curing temperature of the resin melts during the drying and curing process, forming an intermetallic compound with some of the metal particles and surrounding the metal particles. In this case, the intermetallic compound may preferably include a low-melting-point metal of 300°C or lower.

[0140] For example, it may contain Sn having a melting point of 213°C to 220°C. During the drying and hardening process, the Sn melts, and the molten Sn moistens high-melting-point metal particles such as Ag, Ni, or Cu by capillary action, reacting with some of the Ag, Ni, or Cu metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn. The Ag, Ni, or Cu that did not participate in the reaction remain in the form of metal particles.

[0141] Therefore, the multiple second conductive metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0142] The plating layers 131c and 132c can play a role in improving mounting characteristics.

[0143] The types of plating layers 131c and 132c are not particularly limited and may be single-layer plating layers 131c and 132c containing one or more of nickel (Ni), tin (Sn), silver (Ag), palladium (Pd), and alloys thereof, or they may be formed in multiple layers.

[0144] To give a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, and may be in a form in which Ni plating layers and Sn plating layers are sequentially formed on the electrode layer, or may be in a form in which Sn plating layers, Ni plating layers and Sn plating layers are sequentially formed. Furthermore, the plating layers 131c and 132c may include multiple Ni plating layers and / or multiple Sn plating layers.

[0145] There is no particular limit to the size of the stacked electronic component 100.

[0146] However, in order to achieve both miniaturization and high capacitance simultaneously, the thickness of the dielectric layer and internal electrodes must be reduced and the number of layers increased. Therefore, the effects of the present invention may become more pronounced in stacked electronic components 100 of size 3216 (length × width: 3.2 mm × 1.6 mm, with length and width satisfying an error of ±5%) or smaller.

[0147] The present invention will be described in more detail below through test examples, but this is intended to aid in a concrete understanding of the present invention, and the scope of the present invention is not limited by the examples.

[0148] (Example test) Comparative Example 1 involved preparing a pellet-type material by calcining powder particles of barium titanate (BaTiO3) without the addition of donor and acceptor elements at a temperature of 1300°C for 5 hours. At this time, additives containing niobium (Nb) and magnesium (Mg), such as niobium oxide (Nb2O5) and magnesium oxide (MgO), were not added.

[0149] Comparative Example 2 used a material prepared by mixing barium carbonate (BaCO3) powder particles and titanium dioxide (TiO2) powder particles, which are raw materials for barium titanate (BaTiO3), with niobium oxide (Nb2O5) and magnesium oxide (MgO). It was prepared as a pellet type under the same firing conditions as Comparative Example 1, but the firing conditions were controlled so that core-shell dielectric crystal grains would not be formed. At this time, 1 mole of niobium oxide (Nb2O5) and 1 mole of magnesium oxide (MgO) were added to 100 moles of titanium dioxide (TiO2), and based on the elements, 2 moles of niobium (Nb) and 1 mole of magnesium (Mg) were added to 100 moles of titanium (Ti).

[0150] Example 1 used a mixture of barium titanate (BaTiO3) powder particles, niobium oxide (Nb2O5), and magnesium oxide (MgO), and prepared it as a pellet in the same manner as in Comparative Example 1. The firing conditions were controlled to form core-shell dielectric crystal grains. At this time, 0.5 moles of niobium oxide (Nb2O5) and 0.5 moles of magnesium oxide (MgO) were added to 100 moles of barium titanate (BaTiO3), and based on the elements, 1 mole of niobium (Nb) and 0.5 moles of magnesium (Mg) were added to 100 moles of titanium (Ti).

[0151] Example 2 used a mixture of barium titanate (BaTiO3) powder particles, niobium oxide (Nb2O5), and magnesium oxide (MgO), and prepared it as a pellet in the same way as in Comparative Example 1. The firing conditions were controlled to form core-shell dielectric crystal grains. At this time, 1 mole of niobium oxide (Nb2O5) and 1 mole of magnesium oxide (MgO) were added to 100 moles of barium titanate (BaTiO3), and based on the elements, 2 moles of niobium (Nb) and 1 mole of magnesium (Mg) were added to 100 moles of titanium (Ti).

[0152] Example 3 used a mixture of barium titanate (BaTiO3) powder particles, niobium oxide (Nb2O5), and magnesium oxide (MgO), and prepared it as a pellet in the same way as in Comparative Example 1. The firing conditions were controlled to form core-shell dielectric crystal grains. At this time, 2 moles of niobium oxide (Nb2O5) and 2 moles of magnesium oxide (MgO) were added to 100 moles of barium titanate (BaTiO3), and based on the elements, 4 moles of niobium (Nb) and 2 moles of magnesium (Mg) were added per 100 moles of titanium (Ti).

[0153] In Table 1 below, the main component refers to the use of barium titanate (BaTiO3) as the dielectric material, and the minor component refers to the amount added relative to 100 moles of the main component BaTiO3.

[0154] Core-shell refers to the presence or absence of core-shell dielectric crystal grains in which niobium (Nb) and magnesium (Mg) are detected only in the shell during TEM-EDS analysis, but not in the core.

[0155] To measure the dielectric constant, Ag paste was applied to the top and bottom surfaces of each fired pellet and allowed to harden. Then, an LCR meter (or impedance analyzer) was used to bring both Ag electrodes into contact. The dielectric constant was obtained by converting the capacitance value obtained with the LCR meter (or impedance analyzer), taking into account the pellet thickness and electrode area structure. For capacitance measurement, conditions of 1V (applied AC voltage) and 1kHz (measurement frequency) were used; however, the same evaluation may be possible with other dielectric constant measuring devices and conditions.

[0156] DF(%) represents dielectric loss and was measured using the same equipment and method as for dielectric constant measurement.

[0157] The resistivity (Ω·cm) was obtained by contacting both Ag electrodes of a pellet, prepared in the same way as for dielectric constant measurement, to a multimeter, and then converting the measured resistance value, taking into account the pellet's thickness and the electrode's area structure.

[0158] [Table 1]

[0159] In Comparative Example 1, TEM-EDS analysis revealed no core-shell dielectric crystal grains, resulting in a low dielectric loss (DF) of 2.6% and a resistivity of 1.5 × 10⁻⁶. 12 The Ω·cm value was on the higher side, but the dielectric constant was 4.1 × 10⁻⁶. 3 It was measured as low.

[0160] In Comparative Example 2, TEM-EDS analysis revealed the presence of niobium (Nb) and magnesium (Mg) throughout the dielectric crystal grains, and no core-shell dielectric crystal grains were observed. The dielectric constant was 2.3 × 10⁻⁶. 4 While the ratio is relatively high, the dielectric loss (DF) is also high at 17.5%, and the resistivity is 10. 5 It was measured at a low level of less than Ω·cm.

[0161] In Example 1, TEM-EDS analysis revealed core-shell dielectric crystal grains. In the core, relative to 100 at% titanium (Ti), 0.59 at% niobium (Nb) and 0.58 at% magnesium (Mg) were detected. In the shell, relative to 100 at% titanium (Ti), 3.06 at% niobium (Nb) and 1.55 at% magnesium (Mg) were detected. The dielectric constant was 1.6 × 10⁻⁶. 4 The resistivity is relatively high, the dielectric loss (DF) is also relatively low at 10.0%, and the resistivity is 1.2 × 10 10 It was on the higher side, at Ω·cm.

[0162] In Example 2, TEM-EDS analysis revealed core-shell dielectric crystal grains. In the core, relative to 100 at% titanium (Ti), 0.59 at% niobium (Nb) and 0.58 at% magnesium (Mg) were detected. In the shell, relative to 100 at% titanium (Ti), 6.63 at% niobium (Nb) and 3.23 at% magnesium (Mg) were detected. The dielectric constant was 8.8 × 10⁻⁶. 3 The resistivity is on the higher side, the dielectric loss (DF) is also on the lower side at 7.0%, and the resistivity is 8.2 × 10 10 It was on the higher side, at Ω·cm.

[0163] In Example 3, TEM-EDS analysis revealed core-shell dielectric crystal grains. In the core, relative to 100 at% titanium (Ti), 0.59 at% niobium (Nb) and 0.59 at% magnesium (Mg) were detected. In the shell, relative to 100 at% titanium (Ti), 12.92 at% niobium (Nb) and 6.53 at% magnesium (Mg) were detected. The dielectric constant was 1.1 × 10⁻⁶. 4 The ratio is relatively high, the dielectric loss (DF) is also relatively low at 8.2%, and the resistivity is 3.0 × 10 10 It was on the higher side, at Ω·cm.

[0164] This shows that when the dielectric layer contains core-shell dielectric crystal grains, if the donor element containing niobium (Nb) is between 2 at% and 13 at% relative to 100 at% titanium (Ti) in the shell, and the acceptor element containing magnesium (Mg) is between 1 at% and 13 at%, then the dielectric constant, dielectric loss (DF), and resistivity characteristics are all excellent.

[0165] As described above, embodiments of the present invention have been explained in detail, but the present invention is not limited by the embodiments described above and the accompanying drawings, but is limited by the claims provided. Therefore, within the scope of the technical idea of ​​the present invention as described in the claims, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, and these also fall within the scope of the present invention.

[0166] Furthermore, the expression "one embodiment" as used in this invention does not mean that each embodiment is the same as another, but is provided to highlight and explain the unique and distinct features of each embodiment. However, the above-presented embodiments do not preclude their realization in combination with the features of other embodiments. For example, even if a matter described in a particular embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description in the other embodiment that contradicts or is contrary to that matter.

[0167] The terms used in this invention are used solely to describe one embodiment and are not intended to limit the invention. In this context, singular expressions include plural expressions unless the context clearly indicates a different meaning. [Explanation of Symbols]

[0168] 100: Stacked Electronic Components 110: Main unit 111: Dielectric layer 112, 113: Cover section 114', 115': Side margin area 114, 115: Side margin section 121, 122: Internal electrode 131, 132: External electrode 10: Dielectric crystal grains 20: Core-shell dielectric crystal grains 21: Core 22: Shell

Claims

1. A main body including a dielectric layer and internal electrodes, The body includes an external electrode disposed on the main body, The dielectric layer comprises a core that does not contain a donor element and an acceptor element, and core-shell dielectric crystal grains with a shell structure that cover at least a portion of the core and include the donor element, the acceptor element and titanium (Ti). When the atomic percentage of titanium (Ti) contained in the shell is 100 at%, and the atomic percentage of the donor element contained in the shell is Ds, and the atomic percentage of the acceptor element contained in the shell is As, A multilayer electronic component satisfying 2at% ≤ Ds ≤ 13at% and 1at% ≤ As ≤ 13at%.

2. The stacked electronic component according to claim 1, wherein Ds and As satisfy As ≤ Ds.

3. The stacked electronic component according to claim 2, wherein Ds and As satisfy As ≤ Ds ≤ 3 × As.

4. When Dm is the number of moles of the donor element per 100 moles of titanium (Ti) contained in the dielectric layer, and Am is the number of moles of the acceptor element per 100 moles of titanium (Ti) contained in the dielectric layer, A multilayer electronic component according to claim 1, satisfying 0.5 moles ≤ Dm ≤ 4 moles and 0.25 moles ≤ Am ≤ 4 moles.

5. The stacked electronic component according to claim 1, wherein Am ≤ Dm, where Dm is the number of moles of the donor element per 100 moles of titanium (Ti) contained in the dielectric layer, and Am is the number of moles of the acceptor element per 100 moles of titanium (Ti) contained in the dielectric layer.

6. The stacked electronic component according to claim 5, wherein Dm and Am satisfy Am ≤ Dm ≤ 3 × Am.

7. The dielectric layer is made of barium titanate (BaTiO ３ ) and strontium titanate (SrTiO ３ ) contains one of the following as its main component, The stacked electronic component according to claim 1, wherein the shell contains the main component in which at least one of the donor element and the acceptor element is substituted at least one of the elemental positions excluding the oxygen element (O).

8. The stacked electronic component according to claim 1, wherein the donor element comprises at least one of niobium (Nb), tantalum (Ta), and vanadium (V), and the acceptor element comprises at least one of aluminum (Al), gallium (Ga), magnesium (Mg), zinc (Zn), scandium (Sc), indium (In), ytterbium (Yb), erbium (Er), and europium (Eu).

9. A main body including a dielectric layer containing titanium (Ti) and internal electrodes, The body includes an external electrode disposed on the main body, The dielectric layer comprises a core that does not contain donor elements and acceptor elements, and core-shell dielectric crystal grains with a shell structure that cover at least a portion of the core and contain the donor elements and acceptor elements. A multilayer electronic component that satisfies 0.5 moles ≤ Dm ≤ 4 moles and 0.25 moles ≤ Am ≤ 4 moles, where Dm is the number of moles of the donor element per 100 moles of titanium (Ti) contained in the dielectric layer, and Am is the number of moles of the acceptor element per 100 moles of titanium (Ti) contained in the dielectric layer.

10. The stacked electronic component according to claim 9, wherein Dm and Am satisfy Am ≤ Dm.

11. The stacked electronic component according to claim 10, wherein Dm and Am satisfy Am ≤ Dm ≤ 3 × Am.

12. The aforementioned shell contains titanium (Ti), When the atomic percentage of titanium (Ti) contained in the shell is 100 at%, and the atomic percentage of the donor element contained in the shell is Ds, and the atomic percentage of the acceptor element contained in the shell is As, A stacked electronic component according to claim 9, satisfying As ≤ Ds.

13. The stacked electronic component according to claim 12, wherein Ds and As satisfy As ≤ Ds ≤ 3 × As.

14. The stacked electronic component according to claim 12, wherein Ds and As satisfy 2at% ≤ Ds ≤ 13at% and 1at% ≤ As ≤ 13at%.

15. The dielectric layer is made of barium titanate (BaTiO ３ ) and strontium titanate (SrTiO ３ ) contains one of the following as its main component, The stacked electronic component according to claim 9, wherein the shell contains the main component in which at least one of the donor element and the acceptor element is substituted at least one of the elemental positions excluding the oxygen element (O).

16. The stacked electronic component according to claim 9, wherein the donor element comprises at least one of niobium (Nb), tantalum (Ta), and vanadium (V), and the acceptor element comprises at least one of aluminum (Al), gallium (Ga), magnesium (Mg), zinc (Zn), scandium (Sc), indium (In), ytterbium (Yb), erbium (Er), and europium (Eu).

Images