Thermally uniform deposit station

Abstract

This invention provides improved apparatus and methods for gas-phase volumetric processes. [Solution] The gas distribution assembly comprises a pumping liner 250 in which a shower head 280 and a gas funnel 300 are positioned. The pumping liner has an inner wall that is inclined at a first angle with respect to the central axis of the gas distribution assembly such that the inner wall 254 adjacent to the bottom wall 260 of the pumping liner is closer to the central axis than the inner wall adjacent to the top wall 258. The gas funnel and the pumping liner form a plenum 299 between the outer wall of the gas funnel, the cavity 312 of the bottom wall of the gas funnel, and the inner wall of the pumping liner.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to semiconductor manufacturing apparatus and processes. Specifically, embodiments of the present disclosure are directed to a processing station for use with a large-diameter, weld-free lid incorporating a metering device.

Background Art

[0002]

[0002] In the semiconductor manufacturing industry, gas flow paths including various valves are common. Current flow path configurations have dead volumes, and purging is required to prevent backflow of process gases into the clean gas manifold. This is particularly important when reactive gases are employed to prevent gas-phase reactions and film deposition in the gas line. Reaction products can damage manufacturing equipment, cause clogging, or contaminate subsequent film depositions by chemical reactions.

[0003]

[0003] Furthermore, residues remaining from gas-phase reactions in the process line can have a substantial adverse impact on subsequent processes. Residues can react with subsequent gases or process conditions, producing undesirable products. Also, residues can enter the process space and form fine particles on the substrate, damaging the devices being manufactured. The manufacturing equipment needs to undergo extensive maintenance to remove and replace clogged lines and valves, resulting in significant downtime and reduced throughput.

[0004]

[0004] During semiconductor manufacturing, maintaining the thermal uniformity of the substrate during the deposition process is important for deposition uniformity control. Furthermore, characteristics of the process chamber, such as the reaction region, flow uniformity, and the ability to have a rapid cycle time, are important. Current processing stations have dead volumes, which often prevent rapid gas exchange and result in longer cycle times. Additionally, in many conventional process environments, the thermal uniformity of the substrate is not constant.

[0005]

[0005] Therefore, improved apparatus and methods are needed for the gas phase deposition process. [Overview of the Initiative]

[0006]

[0006] One or more embodiments of the present disclosure relate to a gas distribution assembly comprising a pumping liner, a shower head, and a gas funnel. The pumping liner comprises a cylindrical body having an open central region, the pumping liner having an inner wall, an outer wall, a top wall, and a bottom wall, the inner wall being inclined at a first angle with respect to the central axis of the gas distribution assembly such that the inner wall adjacent to the bottom wall is closer to the central axis than the inner wall adjacent to the top wall. The shower head has a front and a back surface defining a thickness, with a plurality of openings extending through the thickness, and the shower head is positioned such that the outer surface of the back surface is adjacent to the bottom wall of the pumping liner. The gas funnel has an upper and a lower part, the lower part of the gas funnel is positioned within the open central region of the pumping liner and includes a front, back and outer wall, the upper part includes an inner wall, an outer wall that is further away from the central axis of the gas funnel than the outer wall of the lower part, a top wall and a bottom wall having a cavity, the cavity has an inner wall and an outer wall, the lower part of the outer wall has an inclination at a second angle with respect to the central axis of the gas distribution assembly, the lower part has an opening that extends from the back to the front, the opening is formed around the central axis, and the front has a contour-forming surface that forms a funnel gap between the front of the gas funnel and the back of the shower head, with an inner circumferential edge that is distanced inward from the back of the shower head and an outer circumferential edge that is in direct contact with the back of the shower head. The gas funnel and pumping liner form a plenum between the outer wall of the lower part of the gas funnel, the cavity of the bottom wall of the upper part of the gas funnel and the inner wall of the pumping liner.

[0007]

[0007] Additional embodiments of the present disclosure relate to a processing chamber comprising a chamber body, at least one substrate support, a chamber lid, and a gas distribution assembly. The chamber body has side walls and a bottom that define the boundary of a process area, and the side walls have upper lips. At least one substrate support is located within the process area and has a support surface. The chamber lid is positioned on the lips of the side walls of the chamber body and is in contact with the lips. The gas distribution assembly comprises a pumping liner, a shower head, and a gas funnel. The pumping liner comprises a cylindrical body having an open central region, and the pumping liner has an inner wall, an outer wall, a top wall, and a bottom wall, the inner wall being inclined at a first angle with respect to the central axis of the gas distribution assembly such that the inner wall adjacent to the bottom wall is closer to the central axis than the inner wall adjacent to the top wall. The shower head has a front and a back surface that define a thickness, with a plurality of openings extending through the thickness, and the shower head is positioned so that the outside of the back surface is adjacent to the bottom wall of the pumping liner. The gas funnel has an upper and a lower part, the lower part of the gas funnel is positioned within the open central region of the pumping liner and includes a front, back and outer wall, the upper part includes an inner wall, an outer wall that is further away from the central axis of the gas funnel than the outer wall of the lower part, a top wall and a bottom wall having a cavity, the cavity has an inner wall and an outer wall, the lower part of the outer wall has an inclination at a second angle with respect to the central axis of the gas distribution assembly, the lower part has an opening that extends from the back to the front, the opening is formed around the central axis, and the front has a contour-forming surface that forms a funnel gap between the front of the gas funnel and the back of the shower head, with an inner circumferential edge that is distanced inward from the back of the shower head and an outer circumferential edge that is in direct contact with the back of the shower head. The gas funnel and pumping liner form a plenum between the outer wall of the lower part of the gas funnel, the cavity of the bottom wall of the upper part of the gas funnel and the inner wall of the pumping liner.

[0008]

[0008] Further embodiments of the present disclosure relate to a processing method comprising flowing a first gas into a gas funnel of a gas distribution assembly through a first inlet line, igniting a plasma at the first gas inlet, exhausting the gas through a pumping liner of the gas distribution assembly, and supplying power to a liner heater to control the temperature of the pumping liner. The gas distribution assembly comprises a pumping liner, a showerhead, and a gas funnel. The pumping liner comprises a cylindrical body having an open central region, and the pumping liner has an inner wall, an outer wall, a top wall, and a bottom wall, the inner wall being inclined at a first angle with respect to the central axis of the gas distribution assembly such that the inner wall adjacent to the bottom wall is closer to the central axis than the inner wall adjacent to the top wall. The showerhead has a front and a back surface defining a thickness, with a plurality of openings extending through the thickness, and the showerhead is positioned so that the outer surface of the back surface is adjacent to the bottom wall of the pumping liner. The gas funnel has an upper and a lower part, the lower part of the gas funnel is positioned within the open central region of the pumping liner and includes a front, back and outer wall, the upper part includes an inner wall, an outer wall that is further away from the central axis of the gas funnel than the outer wall of the lower part, a top wall and a bottom wall having a cavity, the cavity has an inner wall and an outer wall, the lower part of the outer wall has an inclination at a second angle with respect to the central axis of the gas distribution assembly, the lower part has an opening that extends from the back to the front, the opening is formed around the central axis, and the front has a contour-forming surface that forms a funnel gap between the front of the gas funnel and the back of the shower head, with an inner circumferential edge that is distanced inward from the back of the shower head and an outer circumferential edge that is in direct contact with the back of the shower head. The gas funnel and pumping liner form a plenum between the outer wall of the lower part of the gas funnel, the cavity of the bottom wall of the upper part of the gas funnel and the inner wall of the pumping liner. The liner heater is positioned adjacent to the underside of the lower part of the gas funnel.

[0009]

[0009] In order to provide a detailed understanding of the features of the present disclosure described above, the present disclosure summarized above will be described more specifically with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings merely illustrate typical embodiments of the present disclosure and should not be considered to limit the scope of the present disclosure, and that the present disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]

[0010] [Figure 1] This is an isometric cross-sectional view showing a processing chamber according to one or more embodiments of the present disclosure. [Figure 2] This is a cross-sectional view showing a processing chamber according to one or more embodiments of the present disclosure. [Figure 3] This is a cross-sectional view showing a processing chamber lid according to one or more embodiments of the present disclosure. [Figure 4] This is a cross-sectional side view showing a gas distribution assembly according to one or more embodiments of the present disclosure. [Figure 4A] This is an enlarged view showing region 4A in Figure 4. [Figure 5] This is an exploded section cross-sectional view showing region 5 in Figure 3. [Figure 6] This is a schematic diagram showing a processing platform according to one or more embodiments of the present disclosure. [Modes for carrying out the invention]

[0011]

[0017] Before describing some exemplary embodiments of this disclosure, it should be understood that this disclosure is not limited to the structural or process step details shown in the following description. Other embodiments of this disclosure are possible and can be implemented or performed in a variety of ways.

[0012]

[0018] As used herein and in the appended claims, the term “substrate” refers to a surface or a portion of a surface on which a process is performed. Furthermore, unless the context clearly indicates otherwise, a reference to a substrate may refer to only a portion of the substrate. Moreover, a reference to deposition on a substrate may mean both a bare substrate and a substrate on which one or more films or features are deposited or formed.

[0013]

[0019] As used herein, “substrate” refers to any substrate or material surface formed on a substrate on which a film treatment is performed during a manufacturing process. For example, substrate surfaces on which treatment may be performed include, depending on the application, materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials. Substrates include, but are not limited to, semiconductor wafers. Substrates may be subjected to pretreatment processes for polishing, etching, reduction, oxidation, hydroxylation, annealing, UV curing, electron beam curing, and / or firing of the substrate surface. In addition to performing film treatment directly on the surface of the substrate itself, any of the disclosed film treatment steps may be performed on underlying layers formed on the substrate, as more specifically disclosed below, and the term “substrate surface” is intended to include such underlying layers as the context indicates. Therefore, for example, when a film / layer or partial film / layer is deposited on the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0014]

[0020] As used herein and in the appended claims, the terms “precursor,” “reactant,” “reactive gas,” etc., are used interchangeably to refer to any gas species that can react with the substrate surface or a film formed on the substrate surface.

[0015]

[0021] One or more embodiments of the present disclosure provide a thermal deposition station for any deposition process. In some embodiments, the thermal deposition station is configured for an atomic layer deposition (ALD) process. Some embodiments of the present disclosure provide a thermal deposition station having a low overall volume. Some embodiments provide a thermal deposition station without dead zones. Some embodiments provide a thermal deposition station with controlled gaps having thermal insulation capability to specific components and optimized thermal uniformity.

[0016]

[0022] Some embodiments of this disclosure relate to processing stations or gas injectors that combine low flow rates, good thermal uniformity, and good flow uniformity. Low flow rates enable fast cycle times. Thermal uniformity in some embodiments is achieved by controlling contact between components. In some embodiments, flow uniformity is achieved through optimization of the showerhead pore pattern. Some embodiments of this disclosure provide gas injectors with reduced volume, faster gas exchange, improved thermal uniformity, and reduced costs.

[0017]

[0023] One or more embodiments provide an assembly comprising a showerhead base (also referred to as a gas funnel), a pumping ring, a showerhead, a heater assembly, and auxiliary components. In some embodiments, the components are detachable to avoid costs associated with joining methods such as welding or brazing. In some embodiments, the showerhead base and the pumping liner are bolted together to form an external exhaust channel.

[0018]

[0024] In some embodiments, the showerhead includes both gas injection holes and exhaust holes. This enables different hardware configurations for a given process by allowing for the replacement of a single component. The exhaust holes are angled to enable pumping near the edge of the wafer. In some embodiments, rapid gas exchange is enabled by a plenum formed with a minimal volume and an improved showerhead conductance to balance transient response and steady-state uniformity.

[0019]

[0025] One or more embodiments of the present disclosure are directed to a deposition chamber lid and gas distribution assembly having improved thermal uniformity. In one or more embodiments, the gas funnel is bolted to the showerhead. Without being bound by any particular theory of operation, direct contact between the surfaces (e.g., between metals) of the gas funnel and the showerhead is believed to provide good thermal contact. Thus, heat transfer between a thermal element positioned on the gas funnel and the showerhead is improved. In one or more embodiments, thermal uniformity is further improved by direct contact between the surfaces of the pumping liner and the lid.

[0020]

[0026] In one or more embodiments, a gas injector is positioned at an opening of the process chamber lid. In some embodiments, the process chamber lid is thermally non-uniform, and at least one pad is disposed between the pumping liner and the lid to minimize heat loss between the surfaces of the lid and the pumping liner of the gas injector. In some embodiments, three pads are disposed between the pumping ring and the lid to minimize heat loss to a lower temperature lid plate.

[0021]

[0027] In some embodiments, the shower head is thermally insulated from the pumping liner through a controlled gap. The pumping liner is connected to and in contact with the lid, and the shower head is bolted to the gas funnel. In some embodiments, the shower head is further thermally insulated from the lid through a controlled gap.

[0022]

[0028] In some embodiments, the showerhead is insulated from all three components—the pumping liner, gas funnel, and chamber lid—through controlled gaps, as described in more detail below, to minimize heat loss from the showerhead and maintain consistent thermal uniformity. Thermal uniformity is controlled by controlling contact between the aforementioned components. The heating ring and purging ring are bolted to the top of the gas funnel to provide heating to the assembly. The gas funnel is bolted to the showerhead to enhance heat conduction from the heating ring through the gas funnel to the showerhead. The showerhead is thermally insulated from the pumping liner through controlled gaps to reduce heat transfer to thermally non-uniform components. Similarly, the pumping liner has minimal contact with the thermally non-uniform chamber lid. By controlling this contact, the showerhead can maintain a uniform thermal profile. This design and configuration allows the bottom surface of the showerhead facing the substrate in the processing station to have a concentric temperature profile, even if the plate on which the showerhead is mounted has significant temperature non-uniformity. This enables wafer temperature uniformity comparable to that of a single wafer platform.

[0023]

[0029] In some embodiments, the gas funnel and pumping liner form a plenum between the lower outer wall of the gas funnel, the cavity of the upper bottom wall of the gas funnel, and the inner wall of the pumping liner. The plenum is configured to remove exhaust gases.

[0024]

[0030] Accordingly, one or more embodiments of the present disclosure relate to a process chamber lid 150 configured for high-temperature gas supply. Figure 1 is an isometric view showing a process chamber 100 according to one or more embodiments of the present disclosure. Figure 2 is a cross-sectional view showing an exemplary process chamber lid 150. Figure 3 shows the chamber lid 150 separated from the substrate support assembly 200. Figure 4 is an exploded view showing the chamber lid 150. Figure 5 is a detail view showing the chamber lid 150. The various shadings shown are for illustrative purposes only to aid in the identification of the components and do not imply any particular material of the structure.

[0025]

[0031] Referring to Figures 1 to 3, the process chamber lid 150 includes a gas distribution assembly 112, which includes a pumping liner 250, a gas funnel 300, and a shower head 280 as described herein. In some embodiments, the process chamber lid 150 includes an opening 152 through which the gas distribution assembly 112 is positioned inside.

[0026]

[0032] In some embodiments, the processing chamber 100 has a housing 102 having walls 104 and a bottom 106. The housing 102, together with the chamber lid 150, defines an internal region 109. The processing chamber 100 incorporates a substrate support assembly 200. As used in this embodiment, “assembly” means a combination of components or parts. A substrate support assembly 200 according to one or more embodiments comprises at least a support shaft 234 and a substrate support 230, as will be further described below.

[0027]

[0033] The illustrated processing chamber 100 includes a plurality of processing stations 110. The processing stations 110 are located in an internal region 109 of the housing 102 and are positioned in a circular arrangement around the rotation axis 211 of the substrate support assembly 200. Each processing station 110 includes a gas distribution assembly 112 (also referred to as a gas injector) having a front surface 114. A processing station 110 is defined as an area where processing can take place. For example, in some embodiments, a processing station 110 is defined as an area or process area 111 bounded by the support surface 231 of the substrate support 230 (described later) and the front surface 114 of the gas distribution assembly 112. The distribution assembly 112 is part of the gas distribution assembly 105, as will be further described below.

[0028]

[0034] The processing station 110 may be configured to perform any suitable process and provide any suitable process conditions. The type of gas distribution assembly 112 used may depend, for example, on the type of process to be performed and / or the type of showerhead or gas distribution plate. For example, a processing station 110 configured to operate as an atomic layer deposition apparatus may have a showerhead or an eddy gas injector. On the other hand, a processing station 110 configured to operate as a plasma station may have one or more electrodes and / or grounding plate configurations for generating plasma while allowing plasma gas to flow toward the substrate. Suitable processing stations 110 include, but are not limited to, heat treatment stations (e.g., chemical vapor deposition (CVD), atomic layer deposition (ALD)), microwave plasma, three-electrode CCP, ICP, parallel plate CCP, physical vapor deposition (PVD), ultraviolet irradiation, laser processing, pumping chamber, annealing station, and measurement station.

[0029]

[0035] In some embodiments, the support assembly 200 includes a rotatable central base 210. The rotatable central base 210 defines a rotation axis 211 extending along a first direction. In a coordinate system, the rotation axis 211 extends along the Z direction such that rotations around the rotation axis 211 occur in the XY plane. The first direction may be referred to as the vertical direction or along the Z axis, but it will be understood that the use of the term “vertical” in this embodiment is not limited to the direction perpendicular to gravity. As used herein, when the central base 210 “rotates” around the rotation axis 211, the central base 210 is rotating in the XY plane. As used herein, moving “along” the rotation axis 211 or the first direction means that the central base 210, or the described component, is moving in the Z-axis direction.

[0030]

[0036] The support assembly 200 includes at least two support arms 220 connected to and extending from a central base 210. Each support arm 220 has a top and bottom surface that define the thickness of the support arm 220. The support arms 220 have an inner end and an outer end. The inner end is in contact with the central base 210 so that when the central base 210 rotates around the pivot axis 211, the support arms 220 rotate in the same manner. In some embodiments, the support arms 220 are connected to the central base 210 at their inner ends by fasteners (e.g., bolts). In some embodiments, the support arms 220 are formed integrally with the central base 210.

[0031]

[0037] In some embodiments, the support arm 220 extends perpendicular to the axis of rotation 211 such that one of its inner or outer ends is further from the axis of rotation 211 than the other of the inner and outer ends on the same support arm 220. In some embodiments, the inner end of the support arm is closer to the axis of rotation 211 than the outer end of the same support arm 220.

[0032]

[0038] The number of support arms 220 in the support assembly 200 can vary. In some embodiments, there are at least two support arms 220, at least three support arms 220, at least four support arms 220, or at least five support arms 220. In some embodiments, there are three support arms 220. In some embodiments, there are four support arms 220. In some embodiments, there are five support arms 220. In some embodiments, there are six support arms 220.

[0033]

[0039] The support arms 220 can be arranged symmetrically around the central base 210. For example, in a support assembly 200 having four support arms 220, each support arm 220 is positioned at 90° intervals around the central base 210. In a support assembly 200 having three support arms 220, the support arms 220 are positioned at 120° intervals around the central base 210. In other words, in an embodiment having four support arms 220, the support arms are arranged to provide quadruple symmetry around the rotation axis 211. In some embodiments, the support assembly 200 has n support arms 220, and the n support arms 220 are arranged to provide n-fold symmetry around the rotation axis 211. In some embodiments, there are the same number of support arms 220 as there are processing stations 110.

[0034]

[0040] In some embodiments, a support shaft 234 is located at the outer end of each support arm 220. The support shaft 234 acts as a standoff for positioning the substrate support 230 at a distance from the upper surface of the support arm 220 along a first direction.

[0035]

[0041] The substrate support 230 is positioned at the outer end of the support arm 220. In some embodiments, the substrate support 230 is positioned on the support shaft 234 at the outer end of the support arm 220. The center of the substrate support 230 is positioned at a distance from the rotation axis 211 such that the substrate support 230 moves in a circular path offset from the rotation axis when the central base 210 rotates.

[0036]

[0042] The substrate support 230 has support surfaces 231 configured to support the substrate during processing. In some embodiments, all support surfaces 231 of the substrate support 230 are substantially coplanar. In use in this embodiment, “substantially coplanar” means that the plane formed by each support surface 231 is within ±5°, ±4°, ±3°, ±2°, or ±1° of the plane formed by the other support surfaces 231.

[0037]

[0043] In some embodiments, the substrate support 230 is a heater. The heater can be any suitable type of heater known to those skilled in the art. In some embodiments, the heater is a resistive heater having one or more heating elements 235 within a heater body. For example, the embodiment shown in Figure 3 has the substrate support 230 as a heater such that the heater body has heating elements 235 within it. In some embodiments, the substrate support 230 includes an electrostatic chuck. In some embodiments, the substrate support 230 includes both a heater and an electrostatic chuck. This allows a wafer to be chucked on the heater at the start of the process and kept in the same position on the same heater while moving to different processing stations.

[0038]

[0044] Figures 3 to 5 show segments of the chamber lid 150 having openings 152 through which the gas distribution assembly 112 is positioned. The present disclosure advantageously provides thermal insulation between the chamber lid 150 and the components of the gas distribution assembly 112. By thermally insulating at least the pumping liner 250 and the shower head 280 from the chamber lid 150, heat transfer from the pumping liner 250 and the shower head 280 to the chamber lid 150 is reduced or minimized, ensuring good thermal uniformity of the shower head 280.

[0039]

[0045] The pumping liner 250 has a body 252 having any suitable shape. In some embodiments, as shown in the figure, the body 252 generally has a cylindrical body. However, those skilled in the art will recognize that the pumping liner 250 may have any suitable shape, for example, depending on the process chamber lid in which the liner is used.

[0040]

[0046] The body 252 of the pumping liner 250 has an open central region 253, an inner wall 254, and an outer wall 256. The inner wall 254 and the outer wall 256 are positioned at a distance from the central axis 261 of the body 252 of the pumping liner. The outer wall 256 is positioned at a greater distance from the central axis 261 than the distance from the central axis 261 to the inner wall 254. The inner wall 254 has an inner surface that extends around the central axis 261 of the body 252. The body 252 further includes an upper wall 258 and a bottom wall 260. The open central region 253 extends through the upper wall 258 and the bottom wall 260 and is defined or bounded by the inner wall 254. In some embodiments, the inner walls 254 are inclined at a first angle with respect to the central axis 261 of the pumping liner 250 such that the inner wall 254 adjacent to the bottom wall 260 is closer to the central axis 261 than the inner wall 254 adjacent to the top wall 258.

[0041]

[0047] The segments of the chamber lid 150 shown in Figures 3 to 5 include a body 154 having an opening 152 that defines an open central region. The body 154 has an upper wall 158, a bottom wall 160, and an inner side wall 162 positioned at a distance from the central axis 156 of the opening 152. The upper wall 158 and the bottom wall 160 have a thickness T L The opening 152 is defined, and the thickness T L It persists throughout the entire thing.

[0042]

[0048] In some embodiments, the outer edge 286 of the shower head 280 is thermally insulated from the chamber lid 150 by a gap 166. By minimizing surface contact between the chamber lid 150 and the outer edge 286 of the shower head 280, heat transfer is reduced and thermal uniformity of the shower head 280 is ensured. In some embodiments, a thermal insulation pad 195 is positioned between the contact point between the chamber lid 150 and the outer edge 286 of the shower head 280. The thermal insulation pad 195 has low thermal conductivity.

[0043]

[0049] The inner side wall 162 has a circular channel 164 with a channel wall 168. The channel wall 168 is positioned at a greater distance from the central axis 156 than the inner side wall 162. As will be described in more detail below and as is best shown in Figure 5, the outer edge 286 of the shower head 280 is positioned within the gap 166 at a distance D1 from the channel wall 168 to minimize or reduce heat transfer between the shower head 280 and the chamber lid 150.

[0044]

[0050] As will be explained in more detail below and as best shown in Figure 5, the ledge 170 is positioned adjacent to the channel wall 172 of the circular channel 164. The outer edge 286 of the showerhead 280 is in contact with the ledge 170.

[0045]

[0051] Referring back to Figures 3 to 5, the gap 166 in the circular channel 164 is configured as a gas plenum for the pump / purge spacer. The inlet 174 extends through the channel wall 168 and fluidly connects the gap 166 to a vacuum pump or other vacuum source, directing the gas exiting the process area 111 out of the inlet 174 through the gap 166 and forming a gas curtain-type barrier that prevents leakage of process gas from inside the processing chamber.

[0046]

[0052] The shower head 280 is positioned below and in contact with the bottom wall 260 of the pumping liner 250. The shower head 280 has a thickness T SIt has a front surface 282 and a back surface 284 that define the area, and an interior 298 and an exterior 296 having an outer peripheral edge 286.

[0047]

[0053] The interior 298 includes a plurality of openings 288 that extend through the thickness of the shower head 280. The plurality of openings 288 have openings on the front 282 and the back 284. The shower head 280 can be any suitable shower head known to those skilled in the art, in which any suitable number of openings 288 are arranged in any suitable configuration. The number, size, and spacing of the plurality of openings 288 can vary. In some embodiments, there are about 48 or more plurality of openings 288 arranged at equal intervals around the interior 298 of the shower head 280.

[0048]

[0054] The outer surface 296 of the back surface 284 of the shower head 280 is adjacent to the bottom wall 260 of the pumping liner 250. In some embodiments, the outer surface 296 is in direct contact with the bottom wall 260 of the pumping liner 250. In some embodiments, a thermal insulation pad (not shown) is located between the outer surface 296 of the back surface 284 of the shower head 280 and the bottom wall 260 of the pumping liner 250.

[0049]

[0055] In some embodiments, the back surface 284 of the shower head 280 is thermally insulated from the bottom wall 260 of the pumping liner 250 to reduce or minimize heat transfer between the shower head 280 and the pumping liner 250. Reducing or minimizing heat transfer between the shower head 280 and the pumping liner 250 improves the thermal uniformity of the front surface 282 of the shower head 280. In some embodiments, the shower head 280 and the pumping liner 250 are separated by a controlled gap. In some embodiments, one or more thermal insulation pads are positioned between the back surface 284 of the shower head 280 and the bottom wall 260 of the pumping liner 250. The gap or one or more thermal insulation pads are positioned outside 296 of the shower head 280.

[0050]

[0056] In some embodiments, the exterior 296 of the shower head 280 is in direct contact with the bottom wall 260 of the pumping liner 250. In such configurations, the pumping liner 250 is thermally insulated from the chamber lid 150. As used herein, the term “direct contact” means that there are no intervening parts other than O-rings separating the described parts.

[0051]

[0057] In some embodiments, the front surface 282 of the shower head 280 includes at least one exhaust port 294 located within the exterior 296 of the shower head 280. The exhaust port 294 provides a fluid connection with the back surface 284 of the shower head. In the illustrated embodiment, the shower head 280 includes two exhaust ports 294. Those skilled in the art will recognize that there may be any appropriate number of exhaust ports 294.

[0052]

[0058] In some embodiments, the shower head 280 includes two exhaust ports 294 positioned approximately 180° apart from the central axis 281 of the shower head 280. Being spaced apart from the central axis means that the described components are in different rotational positions relative to the central axis, and the distances from the central axis may be the same or different. In some embodiments, there are three exhaust ports 294 positioned approximately 120° apart from the central axis 281. In some embodiments, there are four exhaust ports 294 positioned approximately 90° apart from the central axis 281 of the shower head 280. In some embodiments, as shown in the figure, the exhaust ports 294 are inclined at a first angle with respect to the central axis 281 of the pumping liner 250 such that an exhaust port 294 adjacent to the front 282 is closer to the central axis 281 of the shower head 280 than an exhaust port 294 adjacent to the rear 284.

[0053]

[0059] Figure 4A is an enlarged view showing region 4A of Figure 4. In Figure 4A, at least one exhaust port 294 includes an opening 293 extending from the back surface 284 of the shower head 280 to a circular channel 287 formed on the front surface 282 of the shower head 280. In some embodiments, the circular channel 287 is formed as a recess in the front surface 284 of the shower head 280 and extends around the outside 296 of the shower head 280. In some embodiments, the channel 287 flares outward from the bottom of the opening 293 toward the front surface 282 in an inverted funnel or frustoconical shape.

[0054]

[0060] In some embodiments, the opening 293 is inclined at an angle with respect to the central axis 281 of the showerhead. The shape of the opening 293 may vary. In some embodiments, the opening 293 is cylindrical and inclined at an angle from the back surface 284 toward the channel 287 such that the opening on the back surface 284 is further from the central axis 281 than the opening of the opening 293 in the channel 287.

[0055]

[0061] The opening 293 has an inner exhaust wall 295 and an outer exhaust wall 291. Those skilled in the art will recognize that a cylindrical opening has a single wall extending around the axis of the opening, and that the use of the terms inner exhaust wall and outer exhaust wall means the innermost and outermost parts of the cylindrical cross-section of the opening, respectively. In some embodiments, the outer exhaust wall 295 is positioned at a greater distance from the central axis 281 of the showerhead 280 (as shown in Figure 4) than the distance from the central axis 281 to the inner exhaust wall 291.

[0056]

[0062] The inner exhaust wall 295 has an inner wall angle 295a with respect to the back surface 284 of the shower head 280, and the outer exhaust wall 291 has an outer wall angle 291a with respect to the back surface 284 of the shower head 280. In some embodiments, the inner wall angle 295a and the outer wall angle 291a are substantially the same. As used in this embodiment, “substantially the same” means that the angle is within ±5°, ±4°, ±3°, ±2°, or ±1°. In some embodiments, the angle 295a of the inner exhaust wall 295 is greater than the angle 291a of the outer exhaust wall 291. In some embodiments, the angle 295a of the inner exhaust wall 295 is smaller than the angle 291a of the outer exhaust wall 291. In some embodiments, the opening 293 has a circular cross-section when viewed along a plane perpendicular to the central axis of the opening. In some embodiments, the opening 293 has an elliptical cross-section when viewed along a plane perpendicular to the central axis of the opening.

[0057]

[0063] Referring to Figures 4A and 5, in some embodiments, the outer exhaust wall 291 is aligned with the inner wall 254 of the pumping liner 250. In some embodiments, the outer exhaust wall 291 is offset by ±3° ±2° or ±1° from the inner wall 254 of the pumping liner 250. In some embodiments, the axis 291b formed by the outer exhaust wall 291 is substantially coaxial with the axis formed by the inner wall 254 of the pumping liner 250, as shown in Figure 5. In some embodiments, the axis 291b formed by the outer exhaust wall 291 of the opening 293 is at substantially the same angle 291a as the inner wall 254 of the pumping liner 250. In some embodiments, the axis 291b formed by the outer exhaust wall 291 is within ±3 mm, ±2 mm or ±1 mm.

[0058]

[0064] In some embodiments, the outer peripheral edge 286 of the shower head 280 has a lip 290 having a bottom surface 292 configured to seat the shower head 280 within the ledge 170 of the chamber lid 150, as will be described in more detail below.

[0059]

[0065] A gas funnel 300 is positioned in the open central region 253 of the pumping liner 250. The gas funnel generally has a cylindrical body. However, those skilled in the art will recognize that the gas funnel 300 may have any suitable shape, for example, depending on the process chamber lid in which the liner is used. The gas funnel has an upper part 302 and a lower part 320, the lower part 320 being positioned within the open central region 253 of the pumping liner.

[0060]

[0066] The upper part 302 includes an inner wall 304, an outer wall 306 that is located at a greater distance from the central axis 301 of the gas funnel 300 than the outer wall 306 of the lower part 320, a top wall 308, and a bottom wall 310. The bottom wall 310 has a cavity 312 configured as a circular channel. The cavity 312 has an inner cavity wall 314 and an outer cavity wall 316. In some embodiments, the inner cavity wall 314 is inclined at a first angle with respect to the central axis 301 of the gas funnel 300 such that the inner cavity wall 314 adjacent to the bottom wall 310 is closest to the central axis 301.

[0061]

[0067] As shown in Figure 3, in some embodiments, there is an opening 318 in the upper wall 308 of the upper part 302 of the gas funnel 300, which is fluidly connected to the cavity 312. The opening 318 is fluidly connected to the exhaust manifold 321. The disclosure advantageously provides a single exhaust manifold 321 for each distribution assembly 112, thus allowing for the placement of auxiliary measuring components (not shown) on the chamber lid 150.

[0062]

[0068] The lower part 320 of the gas funnel 300 includes a front surface 322, a back surface 324, and an outer wall 326. The lower part 320 further includes a gas inlet 328 that extends from the back surface 324 to the front surface 322 and is formed around the central axis 301 of the gas funnel 300. The gas inlet 328 of the lower part 320 is in fluid communication with the gas inlet line.

[0063]

[0069] In some embodiments, the gas inlet 328 is symmetrical with respect to the central axis of the gas funnel 300. In some embodiments, the gas inlet 328 is adjacent to the front surface 322 and flares out from a first diameter at the back surface 324 to a second diameter at the front surface 322 that is larger than the first diameter. In some embodiments, the diameter of the gas inlet 328 is kept substantially uniform (within ±0.1 mm) from the back surface 324 to the depth inside the gas funnel 300, and then flares out from the depth inside the gas funnel 300 to the second diameter at the front surface 322.

[0064]

[0070] As shown in Figure 4, the front surface 322 of the gas funnel 300 is at an inward distance D from the back surface 284 of the shower head 280. g The contour-forming surface has a shape with inner circumferential edges 330 spaced apart by a certain distance. As best shown in Figure 6, the front surface 322 further includes an outer circumferential edge 332 that is in direct contact with the back surface 284 of the shower head 280, forming a funnel gap 334 between the front surface 322 of the gas funnel and the back surface of the shower head.

[0065]

[0071] In some embodiments, the funnel gap 334 has a uniform dimension from edge to edge of the gas funnel 300. In some embodiments, the front surface 322 of the gas funnel 300 has an inverted funnel shape with a larger gap adjacent to the central axis 301 of the funnel 300 than adjacent to the front edge near the outer periphery.

[0066]

[0072] In the embodiment shown in Figure 5, the bottom wall 310 of the gas funnel 300 is in direct contact with the back surface 284 of the shower head 280. In some embodiments, a fastener is positioned within at least one opening 336 extending through the lower part 320 to directly secure the gas funnel 300 to the shower head 280.

[0067]

[0073] As illustrated, multiple openings 288 inside the shower head 280 cover the substrate 91. The outermost opening 289 of the multiple openings 288 is positioned beyond the substrate 91. In some embodiments, the exterior 296 of the shower head 280 includes an exhaust port 294. The exhaust port 294 is fluidly connected to the plenum 299 and provides fluid connection to the back surface 284 of the shower head 280.

[0068]

[0074] When assembled, as shown in Figure 5, a plenum 299 is formed between the outer wall 326 of the lower part 320 of the gas funnel 300, the cavity 312 of the bottom wall 310 of the upper part 302 of the gas funnel 300, and the inner wall 254 of the pumping liner 250. A plenum opening 297 is formed between the inner wall 254 of the pumping liner 250 at the bottom wall 260 and the outer wall 326 of the lower part 320 of the gas funnel 300 at the bottom wall 310 of the upper part 302 of the gas funnel 300. As shown, the inner wall 254 of the pumping liner 250 at the bottom wall 260 does not contact the outer wall 326 of the lower part 320 of the gas funnel 300 at the bottom wall 310 of the upper part 302 of the gas funnel 300.

[0069]

[0075] In some embodiments, the plenum 299 has no dead volume. In some embodiments, the plenum 299 has no recirculation. Dead volume is the space in which gas can form vortices and remain so that some of its gas species can remain after the flow has stopped and join the next gas flow.

[0070]

[0076] In some embodiments, the flange 262 extends from the upper wall 258 of the pumping liner 250. The flange 262 has an upper wall 264 and a bottom wall 266. The bottom wall 266 is positioned adjacent to and in contact with the upper wall 158 of the chamber lid 150. The upper wall 264 of the flange 262 is in contact with the bottom wall 310 of the upper part 302 of the gas funnel 300.

[0071]

[0077] In some embodiments, the bottom wall 266 of the flange 262 is thermally insulated from the chamber lid 150. In some embodiments, the bottom wall 266 of the flange 262 is thermally insulated from the chamber lid 150 by one or more thermal insulation pads 195.

[0072]

[0078] In some embodiments, the outer peripheral edge 286 of the shower head 280 is positioned within the gap 166 between the shower head 280 and the chamber lid 150, at a distance D1 from the channel wall 168, to minimize or reduce heat transfer between the shower head 280 and the chamber lid 150. In some embodiments, the outer peripheral edge 286 of the shower head 280 is in contact with the ledge 170 of the chamber lid 150. In some embodiments, a thermal insulation pad 196 is located between the ledge 170 and the front surface 282 of the shower head 280 to reduce or minimize heat transfer between the shower head 280 and the chamber lid 150. In some embodiments, the thermal insulation pad 196 is located between the ledge 170 of the chamber lid 150 and the bottom surface 292 of the lip 290 of the shower head 280. Those skilled in the art will recognize that the bottom surface 292 of the lip 290 of the shower head 180 is interchangeable with the bottom surface 282 of the shower head 280, which is positioned at different levels along the thickness of the shower head 280. In some embodiments, distance D g This is controlled to alter the mixing dynamics of the gas(s) flowing through the process chamber lid 150.

[0073]

[0079] Referring back to Figure 3, several embodiments of the process chamber lid 150 include a purge ring 500. The purge ring 500 has a ring-shaped body extending around the central axis 301 of the gas funnel 300. The purge ring 500 has a top surface 502 and a bottom surface 504 that define its thickness. The purge ring 500 further has an inner edge 506 and an outer edge 508. The bottom surface 504 of the purge ring 500 is adjacent to and in contact with the upper wall 308 of the upper part 302 of the gas funnel. As used in this embodiment, the term “in contact” means that the components are in physical contact or are close enough to form, for example, a fluid seal.

[0074]

[0080] In some embodiments, at least one gas channel is formed in the bottom surface 504 and positioned above a plurality of purge channels in the lower part of the gas funnel that extend from the back surface to the contour-forming front surface. In some embodiments, the thermal element is part of the purge ring 500. In some embodiments, the thermal element is a separate component from the purge ring 500. In some embodiments, the thermal element is a cooling element. The thermal element in some embodiments includes a first connection and a second connection. The first and second connection may be any suitable connection type depending on the type of cooling element. For example, the first and second connection in some embodiments may be an electrical connection or a hollow tube that allows fluid to flow through the thermal element.

[0075]

[0081] In some embodiments, the process chamber lid 150 includes a liner heater 550. The liner heater 550 is positioned on the back surface 324 of the lower part 320 of the gas funnel 300. In some embodiments, the liner heater 550 includes a plurality of separate segments spaced apart around the back surface 324 of the lower part 320 of the gas funnel 300. In some embodiments, there are two, three, four, five, six, seven, or eight separate liner heater segments. In some embodiments, all liner heater segments are controlled simultaneously. In some embodiments, each segment is controlled independently.

[0076]

[0082] In some embodiments, the central axis 261 of the pumping liner 250, the central axis 281 of the shower head 280, and the central axis 301 of the gas funnel 300 are substantially coaxial and aligned with the central axis 156 of the opening 152 of the chamber lid 150. As used in this embodiment, the term “substantially coaxial” means that the described axes are within the range of normal positioning errors permitted by the equipment specifications.

[0077]

[0083] Referring to Figure 6, some embodiments include a controller 495 coupled to various components of the process chamber 100 to control its operation. In some embodiments, the controller 495 controls the entire processing chamber (not shown). In some embodiments, the processing platform includes a plurality of controllers, of which the controller 495 is a part, and each controller is configured to control one or more individual parts of the processing platform. For example, the processing platform in some embodiments includes separate controllers for one or more of the individual processing chambers, a central transfer station, a factory interface, and / or robots.

[0078]

[0084] In some embodiments, at least one controller 495 is coupled to one or more of the process chamber lid 150, liner heaters, one or more flow controllers, pressure gauges, pumps, feedback circuits, plasma sources, purge rings 500, thermal elements, or other components used to operate the processing chamber or the process chamber lid 150, as will be understood by those skilled in the art.

[0079]

[0085] The controller 495 may be any form of a general-purpose computer processor, microcontroller, microprocessor, etc., which can be used in an industrial environment to control various chambers and subprocessors. In some embodiments, at least one controller 495 has a processor 496, a memory 497 coupled to the processor 496, an input / output device 498 coupled to the processor 496, and support circuits 499 for communication between different electronic components. In some embodiments, the memory 497 includes one or more transient memory (e.g., random access memory) and non-transient memory (e.g., storage).

[0080]

[0086] The processor's memory 497, or computer-readable media, may be one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disks, hard disks, or any other form of local or remote digital storage. Memory 497 may hold an instruction set operable by the processor 496 to control system parameters and components. Support circuits 499 are coupled to the processor 496 to assist the processor in a conventional manner. These circuits may include, for example, caches, power supplies, clock circuits, input / output circuits, subsystems, etc.

[0081]

[0087] The process, when executed by a processor, can generally be stored in memory as a software routine that causes a process chamber to execute the process of the Disclosure. The software routine can also be stored and / or executed by a second processor (not shown) located remotely from the hardware controlled by the processor. Some or all of the methods of the Disclosure can also be executed in hardware. Thus, the process can be implemented in software and executed using a computer system, or in hardware, for example, as an application-specific integrated circuit or other kind of hardware implementation, or as a combination of software and hardware. When executed by a processor, the software routine transforms a general-purpose computer into a purpose-specific computer (controller) that controls the operation of the chamber so that the process can be executed.

[0082]

[0088] Some embodiments of this disclosure relate to a process chamber lid 150 and a method of processing using the process chamber lid 150 as described herein. Some embodiments of this disclosure relate to a controller 590 having one or more configurations for performing individual processes or subprocesses to carry out embodiments of the method described herein. A controller 495 may be connected to and configured to operate intermediate components to perform functions of the method. For example, in some embodiments, the controller 495 may be connected (directly or indirectly) to and configured to control one or more of the following: gas valves, actuators, motors, access ports, vacuum controls, etc. Some embodiments relate to a non-transient computer-readable medium configured to carry out embodiments of the method.

[0083]

[0089] In some embodiments, the controller 495, or non-transient computer-readable medium, has one or more configurations or instructions selected from configurations to flow a first gas through a first inlet line into the gas funnel of the gas distribution assembly, configurations to ignite the plasma at the first gas inlet, configurations to exhaust the gas through the pumping liner of the gas distribution assembly, and configurations to supply power to a liner heater that controls the temperature of the pumping liner.

[0084]

[0090] Throughout this specification, any reference to “one embodiment,” “a particular embodiment,” “one or more embodiments,” or “embodiment” means that the specific features, structures, materials, or properties described in relation to the embodiments are included in at least one embodiment of this disclosure. Therefore, the appearance of phrases such as “in one or more embodiments,” “in a particular embodiment,” “in one embodiment,” or “in an embodiment” in various places throughout this specification does not necessarily refer to the same embodiment of this disclosure. Furthermore, specific features, structures, materials, or properties can be combined in any suitable manner in one or more embodiments.

[0085]

[0091] While the disclosures herein have been described with reference to specific embodiments, those skilled in the art will understand that the embodiments described are merely illustrative of the principles and applications of the disclosure. It will become clear to those skilled in the art that various modifications and changes can be made to the methods and apparatus of the disclosure without departing from the spirit and scope of the disclosure. Accordingly, the disclosure may include modifications and changes that fall within the scope of the appended claims and their equivalents.

Claims

1. A gas distribution assembly, A pumping liner comprising a cylindrical body having an open central region, having an inner wall, an outer wall, an upper wall and a bottom wall, wherein the inner wall is inclined at a first angle with respect to the central axis of the gas distribution assembly such that the inner wall adjacent to the bottom wall is closer to the central axis than the inner wall adjacent to the upper wall, A shower head having a front and back surface defining a thickness, with a plurality of openings extending through the thickness, wherein the shower head is positioned such that the outer surface of the back surface is adjacent to the bottom wall of the pumping liner, A gas funnel having an upper and a lower part, wherein the lower part of the gas funnel is positioned within the open central region of the pumping liner, the lower part includes a front, back and outer wall, the upper part includes an inner wall, an outer wall that is further away from the central axis of the gas funnel than the outer wall of the lower part, a top wall and a bottom wall having a cavity, the cavity having an inner cavity wall and an outer cavity wall, the lower part of the outer wall having an inclination at a second angle with respect to the central axis of the gas distribution assembly, the lower part has an opening that extends from the back surface to the front surface, the opening is formed around the central axis, and the front surface has a contour-forming surface in which an inner circumferential edge that is distanced inward from the back surface of the shower head and an outer circumferential edge that is in direct contact with the back surface of the shower head form a funnel gap between the front surface of the gas funnel and the back surface of the shower head. Equipped with, A gas distribution assembly comprising a gas funnel and a pumping liner, wherein a plenum is formed between the lower outer wall of the gas funnel, the cavity of the upper bottom wall of the gas funnel, and the inner wall of the pumping liner.

2. The gas distribution assembly according to claim 1, wherein the shower head includes an interior and an exterior, the interior having a plurality of openings, and the exterior includes a plurality of exhaust channels arranged in a ring shape around the central axis of the gas distribution assembly and extending from a front opening on the front of the shower head to a rear opening on the back.

3. The gas distribution assembly according to claim 2, wherein the front opening is closer to the central axis of the gas distribution assembly than the rear opening.

4. The gas distribution assembly according to claim 3, wherein the front openings and rear openings of the multiple exhaust channels have the same cross-section.

5. The gas distribution assembly according to claim 4, wherein the plurality of exhaust channels are inclined at a first angle.

6. The gas distribution assembly according to claim 2, wherein the plurality of openings inside the shower head have outer rings of the openings that are spaced away from the outer edges of the contour-forming surface in order to prevent dead volume in the funnel gap.

7. The gas distribution assembly according to claim 1, wherein the upper wall of the upper part of the gas funnel includes at least one exhaust opening that is fluidly connected to the cavity.

8. The gas distribution assembly according to claim 1, further comprising a purge ring positioned adjacent to the lower back surface of the gas funnel, the purge ring having a top surface, an inner edge, an outer edge, and a bottom surface, with at least one gas channel formed on the bottom surface and positioned over a plurality of purge channels at the bottom of the gas funnel extending from the back surface to the contour-forming front surface.

9. The gas distribution assembly according to claim 8, further comprising a liner heater positioned adjacent to the lower back surface of the gas funnel.

10. The gas distribution assembly according to claim 1, further comprising a gas inlet connected to the back surface of the gas funnel, which provides a fluid connection between the gas inlet line and the opening on the back surface of the gas funnel.

11. The gas distribution assembly according to claim 1, wherein a flange extends from the upper wall of the pumping liner, and the flange has an upper wall and a bottom wall.

12. The gas distribution assembly according to claim 11, wherein the upper wall of the flange of the pumping liner is in contact with the upper bottom wall of the gas funnel.

13. The gas distribution assembly according to claim 1, wherein the outer edge of the shower head is thermally insulated from the chamber lid by a gap.

14. The gas distribution assembly according to claim 1, wherein the back surface of the shower head is thermally insulated from the bottom wall of the pumping liner.

15. The gas distribution assembly according to claim 14, wherein the back surface of the shower head is thermally insulated from the bottom wall of the pumping liner by at least one thermal insulation pad.

16. A processing chamber, A chamber body having side walls and a bottom that define the boundary of the process area, wherein the side walls have an upper lip, Located within the process region, at least one substrate support having a support surface, A chamber lid positioned on the lip of the side wall of the chamber body and in contact with the lip, A gas distribution assembly, A pumping liner comprising a cylindrical body having an open central region, having an inner wall, an outer wall, an upper wall and a bottom wall, wherein the inner wall is inclined at a first angle with respect to the central axis of the gas distribution assembly such that the inner wall adjacent to the bottom wall is closer to the central axis than the inner wall adjacent to the upper wall, A shower head having a front and back surface defining a thickness, with a plurality of openings extending through the thickness, wherein the shower head is positioned such that the outer surface of the back surface is adjacent to the bottom wall of the pumping liner, A gas funnel having an upper and a lower part, wherein the lower part of the gas funnel is positioned within the open central region of the pumping liner, the lower part includes a front, back and outer wall, the upper part includes an inner wall, an outer wall that is further away from the central axis of the gas funnel than the outer wall of the lower part, a top wall and a bottom wall having a cavity, the cavity having an inner cavity wall and an outer cavity wall, the lower part of the outer wall having an inclination at a second angle with respect to the central axis of the gas distribution assembly, the lower part has an opening that extends from the back surface to the front surface, the opening is formed around the central axis, and the front surface has a contour-forming surface in which an inner circumferential edge that is distanced inward from the back surface of the shower head and an outer circumferential edge that is in direct contact with the back surface of the shower head form a funnel gap between the front surface of the gas funnel and the back surface of the shower head. Equipped with, The gas funnel and the pumping liner form a plenum between the lower outer wall of the gas funnel, the cavity of the upper bottom wall of the gas funnel, and the inner wall of the pumping liner, and a gas distribution assembly. A processing chamber equipped with the following:

17. The processing chamber according to claim 16, wherein the shower head includes an interior and an exterior, the interior having the plurality of openings, and the plurality of openings are positioned on the support surface.

18. The processing chamber according to claim 17, wherein the plurality of openings inside the shower head have outer rings of openings positioned beyond a substrate that is positioned on the support surface and in contact with the support surface.

19. The processing chamber according to claim 16, wherein a flange extends from the upper wall of the pumping liner, the flange having an upper wall and a bottom wall, the bottom wall being positioned adjacent to the upper wall of the chamber lid and in contact with the upper wall of the chamber lid, and the bottom wall being positioned above the upper wall of the chamber lid and in contact with the upper wall of the chamber lid.

20. A processing method, The first gas is flowed into the gas funnel of the gas distribution assembly through the first inlet line, Ignition of the plasma at the first gas inlet, The gas is exhausted through the pumping liner of the aforementioned gas distribution assembly, To control the temperature of the pumping liner, power is supplied to the liner heater. Includes, The aforementioned gas distribution assembly is A pumping liner comprising a cylindrical body having an open central region, having an inner wall, an outer wall, an upper wall and a bottom wall, wherein the inner wall is inclined at a first angle with respect to the central axis of the gas distribution assembly such that the inner wall adjacent to the bottom wall is closer to the central axis than the inner wall adjacent to the upper wall, A shower head having a front and back surface defining a thickness, with a plurality of openings extending through the thickness, wherein the shower head is positioned such that the outer surface of the back surface is adjacent to the bottom wall of the pumping liner, A gas funnel having an upper and a lower part, wherein the lower part of the gas funnel is positioned within the open central region of the pumping liner, the lower part includes a front, back and outer wall, the upper part includes an inner wall, an outer wall that is further away from the central axis of the gas funnel than the outer wall of the lower part, a top wall and a bottom wall having a cavity, the cavity having an inner cavity wall and an outer cavity wall, the lower part of the outer wall having an inclination at a second angle with respect to the central axis of the gas distribution assembly, the lower part has an opening that extends from the back surface to the front surface, the opening is formed around the central axis, and the front surface has a contour-forming surface in which an inner circumferential edge that is distanced inward from the back surface of the shower head and an outer circumferential edge that is in direct contact with the back surface of the shower head form a funnel gap between the front surface of the gas funnel and the back surface of the shower head. Equipped with, The gas funnel and the pumping liner form a plenum between the lower outer wall of the gas funnel, the cavity of the upper bottom wall of the gas funnel, and the inner wall of the pumping liner. The aforementioned gas distribution assembly is Liner heater positioned adjacent to the lower back surface of the gas funnel A processing method comprising:

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