Manufacturing method for packaging substrates

Abstract

The present invention provides a method for manufacturing a packaging substrate that effectively suppresses the occurrence of defects during the formation process of the sealing layer and insulating layer within the packaging substrate. [Solution] A method for manufacturing a packaging substrate includes a preparation step of providing a preliminary substrate 100 including a core layer 10 in which a cavity portion 11 is formed, which includes an element portion mounting space 14 and an inner cavity surface 13 surrounding the element portion mounting space 14; a surface treatment step of increasing the surface energy of at least a portion of the inner cavity surface 13; an element portion mounting step of mounting an element portion 20 on the cavity portion 11 after the surface treatment step; and a sealing layer formation step of forming a sealing layer with a sealing layer manufacturing composition that surrounds at least a portion of the surface of the element portion 20.

Description

Technical Field

[0001] The embodiment relates to a method for manufacturing a packaging substrate.

Background Art

[0002] In manufacturing electronic components, forming a circuit on a semiconductor wafer is called the front-end (FE) process, and assembling the wafer into a state where it can be used as an actual product is called the back-end (BE) process, and this back-end process includes a packaging process.

[0003] The four core technologies of the semiconductor industry that have enabled the recent rapid development of electronic products are semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology. Semiconductor technology has evolved into various forms such as sub-micron nanometer line widths, over ten million cells, high-speed operation, and a large amount of heat dissipation. However, relatively, there is no technology that perfectly supports packaging it. Therefore, the electrical performance of a semiconductor can sometimes be determined by the packaging technology and the electrical connections thereby, rather than the performance of the semiconductor technology itself.

[0004] As materials for packaging substrates, ceramic or resin is applied. In the case of a ceramic substrate, it is not easy to mount high-performance high-frequency semiconductor elements because of its high resistance value or high dielectric constant. In the case of a resin substrate, relatively, high-performance high-frequency semiconductor elements can be mounted, but there is a limit to reducing the wiring pitch.

[0005] Recently, research has been underway to apply silicon or glass to high-end packaging substrates. By forming through-holes in a silicon or glass substrate and applying a conductive material to these through-holes, the wiring length between the element and the motherboard can be shortened, and excellent electrical characteristics can be achieved.

Prior Art Documents

Patent Documents

[0006] [Patent Document 1] Korean Published Patent No. 10-2021-0127188 [Overview of the project] [Problems that the invention aims to solve]

[0007] The objective of this embodiment is to provide a method for manufacturing a packaging substrate that can effectively suppress the occurrence of defects during the formation process of the sealing layer and insulating layer within the packaging substrate. [Means for solving the problem]

[0008] A method for manufacturing a packaging substrate according to one embodiment of this specification includes a preparation step of providing a preliminary substrate including a core layer having a cavity portion formed thereon, which includes an element portion mounting space and an inner surface of the cavity surrounding the element portion mounting space; a surface treatment step of increasing the surface energy of at least a portion of the inner surface of the cavity; an element portion mounting step of mounting an element portion in the cavity portion after the surface treatment step; and a sealing layer formation step of forming a sealing layer with a sealing layer manufacturing composition that surrounds at least a portion of the surface of the element portion.

[0009] The aforementioned spare substrate may further include a cavity conductive layer formed on the inner surface of the cavity.

[0010] The inner surface of the cavity may include exposed areas that are not covered by the cavity conductive layer.

[0011] The surface treatment step can increase the surface energy of the cavity conductive layer and the exposed region.

[0012] In the surface treatment step, at least a portion of the inner surface of the cavity can be plasma treated.

[0013] In the surface treatment step, the cavity conductive layer and the exposed area can be subjected to plasma treatment.

[0014] In the surface treatment step, the atmosphere gas can contain 50% by volume or more of oxygen gas.

[0015] In the surface treatment step, the plasma power can be 50 W or more.

[0016] The surface treatment step can be performed for 15 seconds to 60 seconds.

[0017] In the surface treatment step, plasma treatment can be performed with an atmosphere gas of 50 sccm to 1000 sccm.

[0018] In the surface treatment step, the contact angle of water with respect to the inner surface of the cavity can be adjusted to 60° or less.

[0019] The element part can include a side surface that is disposed at a distance from the inner surface of the cavity.

[0020] The gap aspect ratio Arg of Equation 1 below can be 30 or less.

[0021] JPEG2026070475000002.jpg16128

[0022] In Equation 1, eh is the height of the element part, and g is the minimum value of the distance between a first point located within the side surface of the element part and a second point located on the inner surface of the cavity.

[0023] The g value can be 20 μm to 500 μm.

[0024] The viscosity of the composition for manufacturing the sealing layer at 25°C can be 12,000 cps to 38,000 cps.

[0025] The composition for manufacturing the sealing layer can contain 45% by weight or more and 80% by weight or less of a filler.

[0026] The difference value between the thermal expansion coefficient α1 value of the sealing layer and the thermal expansion coefficient value of the core layer can be 40 ppm / °C or less.

[0027] The thermal expansion coefficient α2 value of the sealing layer can be 140 ppm / °C or less.

[0028] The elastic modulus of the sealing layer can be 10 GPa to 30 GPa.

[0029] The glass transition temperature of the sealing layer can be 70°C to 130°C.

[0030] The composition for manufacturing the sealing layer can contain an epoxy resin and a curing agent.

[0031] The composition for manufacturing the sealing layer can contain 45% by weight or more and 80% by weight or less of a filler.

[0032] The method for manufacturing a packaging substrate according to another embodiment of the present specification includes a preparation step of providing a preliminary substrate including an element part including an element and a core layer which is a glass substrate on which the element part is mounted; and a sealing layer formation step of manufacturing a packaging substrate by forming a sealing layer surrounding at least a part of the element part with a composition for manufacturing a sealing layer.

[0033] The core layer includes a cavity part which is a space formed with a concave upper surface side.

[0034] The element part is disposed in the cavity part.

[0035] The viscosity of the composition for manufacturing the sealing layer at 25°C is 12,000 cps to 38,000 cps.

[0036] The cavity portion may include a cavity opening located on the upper surface side of the core layer, an inner cavity surface connected to the cavity opening and extending in the thickness direction of the core layer, and an element mounting space surrounded by the inner cavity surface.

[0037] At least one side surface of the element portion may be arranged at a distance from the inner surface of the cavity facing that side surface.

[0038] The sealing layer formation step may include a placement step of placing the sealing layer manufacturing composition between the inner surface of the cavity and one side of the element portion, and a curing step of curing the sealing layer manufacturing composition to form a sealing layer.

[0039] The aforementioned spare substrate may have a gap aspect ratio, Arg, of 30 or less in Equation 1.

[0040] The g value can range from 20 μm to 500 μm.

[0041] The difference between the thermal expansion coefficient α1 of the sealing layer and the thermal expansion coefficient of the core layer may be 40 ppm / °C or less.

[0042] The thermal expansion coefficient α2 of the sealing layer may be 140 ppm / °C or less.

[0043] The elastic modulus of the sealing layer can be 10 GPa to 30 GPa.

[0044] The glass transition temperature of the sealing layer may be 70°C to 130°C.

[0045] The aforementioned composition for manufacturing the sealing layer may include an epoxy resin and a curing agent.

[0046] The aforementioned composition for manufacturing the sealing layer may contain 45% to 80% by weight of a filler. [Effects of the Invention]

[0047] The manufacturing method for the packaging substrate in this example effectively suppresses the formation of defects during the process of forming the sealing layer and insulating layer within the packaging substrate. [Brief explanation of the drawing]

[0048] [Figure 1] This is a cross-sectional view illustrating a spare substrate provided by a preparation step according to one embodiment of the concrete example. [Figure 2] This is a cross-sectional view illustrating a spare substrate provided by the element mounting step according to one embodiment of the concrete example. [Figure 3] This is a cross-sectional view illustrating a packaging substrate provided by a sealing layer formation step according to one embodiment of the concrete example. [Figure 4] This is a cross-sectional view illustrating a spare substrate provided by a preparation step according to another embodiment of the concrete example. [Figure 5] This is a cross-sectional view illustrating a packaging substrate provided by a sealing layer formation step according to another embodiment of the concrete example. [Best Mode for Carrying Out the Invention]

[0049] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings so that they can be easily implemented by a person with ordinary skill in the art to which the present invention pertains. However, the present invention can be realized in a variety of different forms and is not limited to the embodiments described herein. Similar parts are denoted by the same reference numerals throughout the specification.

[0050] Throughout this specification, the term “these combinations” as used in any expression in Markush form means one or more mixtures or combinations selected from the group of components described in the Markush form, and includes one or more of those components.

[0051] Throughout this specification, terms such as “First,” “Second,” or “A,” “B” are used to distinguish identical terms from one another. Furthermore, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0052] In this specification, "~system" may mean that the compound contains a compound corresponding to "~" or a derivative of "~".

[0053] In this specification, the meaning of B being located on A means either B being in direct contact with A, or B being located on A with other layers located between them, and is not limited to B being in contact with the surface of A.

[0054] In this specification, the meaning of B being connected to A means either that A and B are directly connected, or that A and B are connected through other components between them, and is not limited to the direct connection of A and B unless otherwise specified.

[0055] In this specification, unless otherwise specified, singular expressions are interpreted to include singular or plural, as interpreted in the context.

[0056] In this specification, the form, relative size, angles, etc., of each component in the drawings are illustrative and may be exaggerated for illustrative purposes, and the rights shall not be construed as being limited to the drawings.

[0057] In this specification, "adjacent to A and B" means that A and B are located touching each other, or that A and B are not touching but are located close to each other. In this specification, the expression "adjacent to A and B" is not construed to mean that A and B are located touching each other unless otherwise specified.

[0058] In this specification, unless otherwise specified, the physical properties of each component within the packaging substrate are assumed to have been measured at room temperature. Room temperature is defined as 20°C to 25°C.

[0059] Defects may occur during the encapsulation process after the element has been mounted in the cavity within the core layer. Specifically, voids may occur within the encapsulation layer surrounding the element, or undulations may occur in the insulating layer formed on the encapsulation layer. Such phenomena may occur even more frequently when a conductive layer is present on the inner surface of the cavity.

[0060] The inventors of this embodiment experimentally confirmed that by introducing the technical features detailed below, they could suppress the occurrence of defects in the sealing layer and insulating layer, thereby providing a method for manufacturing a packaging substrate with stable durability and electrical reliability, and thus completed this embodiment.

[0061] The following provides a detailed explanation of specific examples.

[0062] The manufacturing method for a packaging substrate in the embodiment includes a preparation step of providing a preliminary substrate including a core layer having a cavity portion formed thereon, which includes an element portion mounting space and an inner surface of the cavity surrounding the element portion mounting space; a surface treatment step of increasing the surface energy of at least a portion of the inner surface of the cavity; an element portion mounting step of mounting the element portion in the cavity portion after the surface treatment step; and a sealing layer formation step of forming a sealing layer with a sealing layer manufacturing composition that surrounds at least a portion of the surface of the element portion.

[0063] Figure 1 is a cross-sectional view illustrating the spare substrate provided by the preparation step of the embodiment. The embodiment will be described below with reference to Figure 1.

[0064] Preparation Steps The spare substrate 100 may include the core layer 10.

[0065] The core layer 10 can function as a support layer in the packaging substrate. The core layer 10 can be applied without limitation as long as it can be used as a support layer in the field of packaging substrates. For example, the core layer 10 may be a glass substrate, a ceramic substrate, an organic substrate, etc.

[0066] In particular, the core layer 10 may be a glass substrate. When a glass substrate is used as the core layer 10, it is advantageous for realizing fine patterns and can stably suppress the generation of parasitic elements.

[0067] The glass substrate may, for example, be alkali borosilicate glass, alkali-free borosilicate glass, alkali-free alkaline earth borosilicate glass, or any glass plate used for electronic components. Electronic device glass substrates can be used as the glass substrate; for example, those manufactured by Schott, AGC, Corning, etc., may be used, but are not limited to these.

[0068] The core layer 10 may include through vias (not shown) that penetrate in the thickness direction of the core layer 10.

[0069] A through via consists of an internal space (not shown) and an inner diameter surface of the via (not shown) surrounding the internal space. The internal space refers to an empty space, and the inner diameter surface of the via refers to the surface of the core layer 10 formed on the inside of the through via.

[0070] The through vias may have a diameter that varies in the thickness direction of the core layer 10. The through vias may have a substantially uniform diameter in the thickness direction of the core layer 10.

[0071] The surface of the core layer 10 may include an upper surface and a side surface connected to the upper surface and formed in the thickness direction of the core layer 10. The surface of the core layer 10 may also include a lower surface facing the upper surface.

[0072] The statement that the side surface is formed in the thickness direction of the core layer 10 is interpreted to mean not only that the side surface is perpendicular to the upper surface of the core layer 10, but also that at least a portion of the side surface forms an angle (angle of inclination) other than 90° with the upper surface.

[0073] The aforementioned side surface may be flat or curved.

[0074] The thickness of the core layer 10 may be 100 μm or more. The thickness may be 200 μm or more. The thickness may be 300 μm or more. The thickness may be 3000 μm or less. The thickness may be 2000 μm or less. The thickness may be 1000 μm or less. In such cases, the core layer 10 can have mechanical properties suitable for application to a packaging substrate.

[0075] The core layer 10 may have a cavity portion 11 formed therein, which includes an element mounting space 14 and an inner cavity surface 13 surrounding the element mounting space 14.

[0076] The cavity portion 11 may be formed by recessing the upper surface side of the core layer 10. The cavity portion 11 may also be formed by recessing a part of the upper surface side of the core layer 10 in the thickness direction of the core layer 10. The cavity portion 11 may also be formed by penetrating through the core layer 10 in the thickness direction.

[0077] The cavity portion 11 may include an element mounting space 14 and an inner cavity surface 13 surrounding the element mounting space 14. The cavity portion 11 includes a cavity opening 12 located on the upper side of the core layer 10, an inner cavity surface 13 connected to the cavity opening 12 and extending in the thickness direction of the core layer 10, and an element mounting space 14 surrounded by the inner cavity surface 13.

[0078] The cavity opening 12 may be positioned in contact with the upper surface of the core layer 10. The cavity opening 12 may constitute the inner edge of the upper surface of the core layer 10.

[0079] The statement that the cavity inner surface 13 is formed extending in the thickness direction of the core layer 10 is interpreted to mean not only that the cavity inner surface 13 is perpendicular to the upper surface of the core layer 10, but also that at least a portion of the cavity inner surface 13 forms an angle (inclination angle) other than 90° with the upper surface.

[0080] The inner surface 13 of the cavity may be flat or it may be a curved surface.

[0081] The spare substrate 100 may further include a cavity conductive layer 40 formed on the inner surface 13 of the cavity. The cavity conductive layer 40 is a conductive layer disposed on the inner surface 13 of the cavity that transmits electrical signals within the packaging substrate. The cavity conductive layer 40 may be disposed in contact with the inner surface 13 of the cavity, or other components may be disposed between the cavity conductive layer 40 and the inner surface 13 of the cavity.

[0082] The inner surface 13 of the cavity may include an exposed region that is exposed to the outside. The exposed region is the area on the inner surface 13 of the cavity that is not covered by the cavity conductive layer 40.

[0083] A redistribution layer (not shown) may be formed on the inner surface 13 of the cavity. The redistribution layer may include a cavity conductive layer 40 and an insulating layer (not shown) surrounding at least a portion of the cavity conductive layer 40.

[0084] In the preparation step, a core layer 10 may be prepared in which a cavity conductive layer 40 is already formed on the inner surface 13 of the cavity. Alternatively, the cavity conductive layer 40 may be formed on the inner surface 13 of the cavity in the preparation step.

[0085] A detailed explanation of the conductive layer, insulating layer, and redistribution layer will be provided below, so it will be omitted here.

[0086] The element mounting space 14 is the space in which the element is mounted. The element mounting space 14 may be an internal space formed by a recess on the upper side of the core layer 10.

[0087] The details of the component section will be explained below, so they will be omitted here.

[0088] Surface treatment step In this embodiment, the surface treatment step can increase the surface energy of at least a portion of the cavity inner surface 13. The surface treatment step can increase the surface energy of the cavity conductive layer 40 and the exposed region. This effectively increases the affinity of the region where the sealing layer is formed to the composition for manufacturing the sealing layer, and effectively suppresses the occurrence of undulation in the insulating layer caused by defects in the sealing layer. In particular, the surface treatment step in this embodiment may be effective in forming a sealing layer with suppressed voids even in the cavity portion 11 where the cavity conductive layer 40 is formed on the cavity inner surface 13.

[0089] In the surface treatment step, at least a portion of the inner surface 13 of the cavity can be plasma treated. In the surface treatment step, both the cavity conductive layer 40 and the exposed area of ​​the inner surface 13 of the cavity can be plasma treated. Through plasma treatment, a large number of hydrophilic functional groups can be formed on the surface of the cavity conductive layer 40 and other surfaces. As a result, the hydrophilic sealing layer manufacturing composition can be easily filled without voids into the space formed between the element portion mounted in the cavity portion 11 and the inner surface 13 of the cavity.

[0090] In the surface treatment step, an atmospheric gas can be introduced. In the surface treatment step, the atmospheric gas can act as a plasma generating gas.

[0091] In the surface treatment step, the plasma power may be 50W to 1500W. The plasma power may be 100W or more. The plasma power may be 150W or more. The plasma power may be 200W or more. The plasma power may be 1200W or less. The plasma power may be 1000W or less. In such cases, excessive damage to the cavity conductive layer 40 can be suppressed, and surface characteristics such as the inner surface 13 of the cavity can be efficiently controlled.

[0092] The surface treatment step can be performed for 15 to 60 seconds. The surface treatment step may be performed for 17 seconds or more. The surface treatment step may be performed for 50 seconds or less. The surface treatment step may be performed for 40 seconds or less. In such cases, the inner surface 13 of the cavity, etc., with sufficiently improved affinity to the sealing layer manufacturing composition can be efficiently provided.

[0093] The ambient gas may contain 50% or more by volume of oxygen gas. The ambient gas may contain 60% or more by volume of oxygen gas. The ambient gas may contain 70% or more by volume of oxygen gas. The ambient gas can contain 100% or less by volume of oxygen gas. In such cases, it may be useful to adjust the surface energy of the inner surface 13 of the cavity, etc., to within a range predetermined in the embodiment.

[0094] In one concrete example, an atmospheric gas with a controlled flow rate can be introduced during the surface treatment step. This allows the inner surface 13 of the cavity to have a surface energy suitable for forming the sealing layer. At the same time, it is possible to prevent the adhesive film 30 that fixes the element portion 20 from having an excessively high affinity to the sealing layer, thereby preventing excessive amounts of adhesive residue from the adhesive film 30 from remaining on the surface of the sealing layer.

[0095] In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 50 sccm or more. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 100 sccm or more. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 200 sccm or more. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 500 sccm or more. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 1000 sccm or less. In the step, plasma treatment may be performed with an atmospheric gas of 1500 sccm or less. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 2000 sccm or more. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 3000 sccm or more. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 4000 sccm or more. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 5000 sccm or more. In the surface treatment step, plasma treatment may be performed with an atmospheric gas of 10000 sccm or less. In such cases, the sealing layer can be smoothly formed while stably suppressing the occurrence of defects in the insulating layer caused by the adhesive material.

[0096] In the surface treatment step, the water contact angle with the inner surface 13 of the cavity can be adjusted to 60° or less. In the surface treatment step, the water contact angle with the inner surface 13 of the cavity can be adjusted to 40° or less. In the surface treatment step, the water contact angle with the inner surface 13 of the cavity can be adjusted to 30° or less. In the surface treatment step, the water contact angle with the inner surface 13 of the cavity can be adjusted to 25° or less. In the surface treatment step, the water contact angle with the inner surface 13 of the cavity can be adjusted to 20° or less. In the surface treatment step, the water contact angle with the inner surface 13 of the cavity can be adjusted to 5° or more.

[0097] In the surface treatment step, the water contact angle with the surface of the cavity conductive layer 40 can be adjusted to 60° or less. In the surface treatment step, the water contact angle with the surface of the cavity conductive layer 40 can be adjusted to 40° or less. In the surface treatment step, the water contact angle with the surface of the cavity conductive layer 40 can be adjusted to 30° or less. In the surface treatment step, the water contact angle with the surface of the cavity conductive layer 40 can be adjusted to 25° or less. In the surface treatment step, the water contact angle with the surface of the cavity conductive layer 40 can be adjusted to 20° or less. In the surface treatment step, the water contact angle with the surface of the cavity conductive layer 40 can be adjusted to 5° or more.

[0098] In such cases, the occurrence of defects caused by differences in surface energy properties between the sealing layer manufacturing composition and other components placed within the cavity can be effectively suppressed.

[0099] The aforementioned contact angle is measured using a surface analyzer. Specifically, water is dropped onto the inner surface of the cavity or the surface of the cavity conductive layer, and the contact angle is measured using a surface analyzer.

[0100] Element mounting step Figure 2 is a cross-sectional view illustrating the spare substrate provided by the component mounting step of the embodiment. The embodiment will be described below with reference to Figure 2.

[0101] The core layer 10 and cavity section 11 are the same as those described in Figure 1 above. The differences will be explained below.

[0102] The manufacturing method for the packaging substrate in the embodiment may further include an element mounting step in which the element portion 20 is mounted on the cavity portion 11 after the surface treatment step has been completed. In the embodiment, the fixing of the element portion 20 via the adhesive film 30 can be performed after the surface treatment step has been completed. This effectively prevents the surface energy of the adhesive substance contained in the adhesive film 30 from becoming excessively high during the surface treatment step, which would hinder the peeling of the adhesive film 30, or the adhesive substance from remaining on the surface of the sealing layer.

[0103] The spare substrate 100 may further include an element section 20 arranged in the cavity section 11. The element section 20 may be arranged in the element section mounting space 14.

[0104] The element portion 20 can be fixed within the cavity portion 11 by the adhesive film 30.

[0105] The adhesive film 30 can be any film applied to fix elements in the field of packaging, without limitation. For example, the adhesive film 30 may be a polyimide tape.

[0106] The element portion 20 may be the element itself or an element package. An element package is one or more elements packaged with an element insulating material. The element insulating material can surround at least a portion of the surface of the element. The element insulating material can fix one or more elements within the element package and provide insulation to the desired region within the element package.

[0107] The elements may include not only semiconductor elements such as CPUs, GPUs, and memory chips, but also capacitor elements, transistor elements, impedance elements, and other modules. In other words, any semiconductor element that is mounted on a semiconductor device can be used as the element without limitation.

[0108] The element insulating material may include a substance that can properly fix the element and prevent electrical short circuits. The element insulating material may, as an example, include any one selected from the group consisting of epoxy resins, polyimide resins, polyurethane resins, polyester resins, acrylate resins, polyamide resins, and combinations thereof.

[0109] The element portion 20 may include side surfaces. The side surfaces of the element portion 20 may be positioned to face a portion of the inner surface of the cavity at a distance from it.

[0110] In the component mounting step, a spare substrate 100 can be provided in which Arg, the gap aspect ratio in Equation 1 below, is 30 or less.

[0111] JPEG2026070475000003.jpg16128

[0112] In the above formula 1, eh is the height of the element portion 20, and g is the minimum distance between a first point located within the side surface of the element portion 20 and a second point located in the cavity opening 12.

[0113] In this embodiment, the shape of the empty space formed between the element portion 20 and the inner surface 13 of the cavity can be adjusted by controlling the Arg value of the spare substrate 100. Through this, the formation of voids in the sealing layer can be efficiently suppressed by easily dispensing a sealing layer manufacturing composition having a viscosity of a certain level or higher into the empty space.

[0114] The Arg value of the spare substrate 100 may be 30 or less. The Arg value may be 25 or less. The Arg value may be 20 or less. The Arg value may be 15 or less. The Arg value may be 10 or less. The Arg value may be 7 or less. The Arg value may be 0.1 or more. The Arg value may be 0.5 or more. The Arg value may be 1 or more. In such cases, the encapsulation layer manufacturing composition containing the filler may help to sufficiently fill the empty space formed in the cavity portion 11.

[0115] The g value may be between 20 μm and 500 μm. The g value may be 50 μm or more. The g value may be 100 μm or more. The g value may be 400 μm or less. The g value may be 300 μm or less.

[0116] The eh value may be between 300 μm and 600 μm. The eh value may be 350 μm or more. The eh value may be 400 μm or more. The eh value may be 550 μm or less.

[0117] In such cases, the sealing layer manufacturing composition can be easily filled into the space formed between the inner surface 13 of the cavity and the element portion 20. Furthermore, by controlling the shape and volume of the formed sealing layer, it is possible to suppress the occurrence of defects such as wrinkles in the insulating layer formed on the sealing layer.

[0118] sealing layer formation step In the sealing layer formation step, a sealing layer is formed using a sealing layer manufacturing composition to surround at least a portion of the element portion 20. In the sealing layer formation step, the sealing layer manufacturing composition can be cured to form the sealing layer.

[0119] The sealing layer formation step may include a placement step of placing the sealing layer manufacturing composition between the inner surface 13 of the cavity and one side of the element portion 20, and a curing step of curing the sealing layer manufacturing composition to form a sealing layer.

[0120] Placement process The composition for manufacturing the sealing layer may include an epoxy resin and a curing agent.

[0121] In one concrete example, by applying an epoxy resin to the composition for manufacturing the sealing layer, controlled elasticity can be imparted to the sealing layer. This allows the sealing layer to adequately protect the element portion 20 and stably support the insulating layer formed on the sealing layer.

[0122] The epoxy resin may contain two or more epoxy groups. The epoxy resin may be any one selected from the group consisting of bisphenol A type epoxy resin, brominated bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, novolac type epoxy resin, alicyclic epoxy resin, naphthalene type epoxy resin, silicone epoxy copolymer resin, and combinations thereof.

[0123] The weight-average molecular weight of the epoxy resin may be 1,000 g / mol or less. The weight-average molecular weight may also be 800 g / mol or less. The weight-average molecular weight may also be 600 g / mol or less. The weight-average molecular weight may be 100 g / mol or more.

[0124] The curing agent in the example is not limited as long as it is a compound that can function as a curing agent for epoxy resins. For example, the curing agent may be an acid anhydride-based curing agent, an aromatic amine, a phenolic resin, an imidazole-based compound, etc.

[0125] In the example, the amount of curing agent can be applied at a rate of 0.3 equivalents or more per equivalent of epoxy groups in the epoxy resin. In the example, the amount of curing agent can be applied at a rate of 0.5 equivalents or more per equivalent of epoxy groups in the epoxy resin. In the example, the amount of curing agent can be applied at a rate of 0.7 equivalents or more per equivalent of epoxy groups in the epoxy resin. In the example, the amount of curing agent can be applied at a rate of 2 equivalents or less per equivalent of epoxy groups in the epoxy resin. In the example, the amount of curing agent can be applied at a rate of 1.5 equivalents or less per equivalent of epoxy groups in the epoxy resin.

[0126] The composition for manufacturing the encapsulating layer may further contain a filler. The filler can contribute to the composition for manufacturing the encapsulating layer having a viscosity within a predetermined range in the embodiment, and may help to ensure that the encapsulating layer has physical properties suitable for the packaging substrate.

[0127] The filler may include inorganic particles. For example, silica, titania, alumina, etc., may be used as the filler.

[0128] The average particle size of the filler may be 150 nm or less. The average particle size may be 120 nm or less. The average particle size may be 100 nm or less. The average particle size may be 80 nm or less. The average particle size may be 10 nm or more. The average particle size may be 30 nm or more. In such cases, the composition for manufacturing the sealing layer can have viscosity characteristics suitable for filling the cavity, which can help ensure that the sealing layer has the desired mechanical properties. Furthermore, it may be easy to implement a conductive layer having a fine pitch on the sealing layer.

[0129] The composition for manufacturing the sealing layer may contain 45% to 80% by weight of filler.

[0130] In this embodiment, the content of the filler in the encapsulation layer manufacturing composition can be adjusted to a range predetermined in the embodiment. This allows the encapsulation layer manufacturing composition to have flow characteristics suitable for smoothly filling the space formed between the element portion 20 and the inner surface 13 of the cavity, and the formed encapsulation layer can stably protect the element from external shocks and thermal shocks.

[0131] The composition for manufacturing the sealing layer may contain 45% by weight or more of filler. The composition for manufacturing the sealing layer may contain 50% by weight or more of filler. The composition for manufacturing the sealing layer may contain 80% by weight or less of filler. The composition for manufacturing the sealing layer may contain 75% by weight or less of filler. The composition for manufacturing the sealing layer may contain 70% by weight or less of filler. In such cases, the composition can have flow characteristics suitable for filling the cavity portion 11 on which the element portion 20 is mounted. Furthermore, the composition can stably fix the element portion 20 and the insulating layer formed on the sealing layer within the cavity portion 11, and can form a sealing layer that does not apply excessive stress to the core layer 10 during the manufacturing process in a high-temperature atmosphere.

[0132] The composition for manufacturing the sealing layer may contain a solvent. The solvent is not limited as long as it is generally applicable in the art. For example, the solvent may include aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, ethers, esters, and the like.

[0133] The composition for manufacturing the sealing layer may further contain additives. The additives are not limited as long as they are generally applicable in the art. Exemplary examples of additives may include defoamers, coupling agents, flame retardants, surfactants, and the like.

[0134] During the placement process, the sealing layer manufacturing composition can be melted and mixed to fill the region where the sealing layer will be formed. The melted and mixed sealing layer manufacturing composition may be placed via an injection device. The melted and mixed sealing layer manufacturing composition may also be placed via a heating cylinder.

[0135] In this embodiment, the temperature of the heating cylinder can be controlled within a preset range during the placement process. This helps the composition for manufacturing the sealing layer to have a melt viscosity suitable for filling narrow gaps and suppresses the formation of voids within the sealing layer.

[0136] The temperature of the heating cylinder is the temperature measured at the tip of the heating cylinder.

[0137] During the placement process, the temperature of the heating cylinder can be 40°C to 70°C. The temperature may be 45°C or higher. The temperature may be 50°C or higher. The temperature may be 65°C or lower. The temperature may be 60°C or lower. In such cases, the sealing layer manufacturing composition can sufficiently fill the empty space in the cavity portion 11.

[0138] In this embodiment, a encapsulation layer manufacturing composition with a viscosity adjusted at 25°C can be applied. In this embodiment, a encapsulation layer manufacturing composition having a viscosity controlled within a preset range can have flow properties suitable for filling complexly shaped voids within the cavity portion 11 during the placement process. Furthermore, it may help ensure that the encapsulation layer formed through the curing of the composition has thermal expansion properties suitable for application to substrates with high hardness.

[0139] The viscosity of the sealing layer manufacturing composition at 25°C may be between 12,000 cps and 38,000 cps. The viscosity may be 15,000 cps or higher. The viscosity may be 18,000 cps or higher. The viscosity may be 20,000 cps or higher. The viscosity may be 35,000 cps or lower. The viscosity may be 32,000 cps or lower. The viscosity may be 30,000 cps or lower. The viscosity may be 28,000 cps or lower. In such cases, the sealing layer manufacturing composition can be smoothly introduced into the empty space within the cavity, which can help suppress the occurrence of defects in the sealing layer.

[0140] The viscosity of the encapsulation layer manufacturing composition at 25°C is measured using a viscometer after adjusting the temperature of the composition to 25°C.

[0141] hardening process Figure 3 is a cross-sectional view illustrating a packaging substrate manufactured by the manufacturing method of the example packaging substrate. The example will be described below with reference to Figure 3.

[0142] The core layer 10, element section 20, and cavity section 11 are the same as those described in Figures 1 and 2 above. The differences will be explained below.

[0143] During the curing process, the sealing layer manufacturing composition placed in the region to be sealed can be cured to form the sealing layer 50. The sealing layer manufacturing composition can be cured by heating to form the sealing layer 50.

[0144] The heat treatment temperature during the curing process may be 120°C or higher. The heat treatment temperature may be 130°C or higher. The heat treatment temperature may be 140°C or higher. The heat treatment temperature may be 250°C or lower. The heat treatment temperature may be 230°C or lower. The heat treatment temperature may be 200°C or lower.

[0145] The heat treatment time during the curing process may be 30 minutes or more. The heat treatment time may be 40 minutes or more. The heat treatment time may be 50 minutes or more. The heat treatment time may be 200 minutes or less. The heat treatment time may be 180 minutes or less. The heat treatment time may be 150 minutes or less.

[0146] In such cases, the stable curing reaction within the product for manufacturing the sealing layer can help in forming a sealing layer 50 with excellent physical properties.

[0147] In the packaging substrate 110 manufactured by the sealing layer formation step, the sealing layer 50 may be formed to surround at least a portion of the element portion 20. The sealing layer 50 may surround at least a portion of one side surface of the element portion 20. The sealing layer 50 may surround all sides of the element portion 20. The sealing layer 50 may surround at least a portion of the top surface of the element portion 20. The sealing layer 50 may surround the top surface of the element portion 20. The sealing layer 50 may surround at least a portion of the top and side surfaces of the element portion 20. The sealing layer 50 may surround at least a portion of the entire overall surface of the element portion 20.

[0148] At least a portion of the sealing layer 50 may be disposed in contact with the surface of the element portion 20. The sealing layer 50 may be disposed in contact with the surface of the element portion 20. The sealing layer 50 may be disposed at a distance from the surface of the element portion 20.

[0149] In the example packaging substrate 110, a sealing layer 50 can be formed that does not have excessive empty space. This allows the sealing layer 50 to stably support and fix the element portion 20, and when a redistribution layer is materialized above and / or below the sealing layer 50, the occurrence of defects such as undulations within the redistribution layer can be stably suppressed.

[0150] The manufactured packaging substrate 110 in this embodiment can control the difference between the thermal expansion characteristics of the sealing layer 50 and the core layer 10. This effectively suppresses the occurrence of defects such as cracks in the core layer 10, even when the substrate is repeatedly exposed to high-temperature environments during the manufacturing process.

[0151] The difference between the thermal expansion coefficient α1 of the sealing layer 50 and the thermal expansion coefficient of the core layer 10 may be 40 ppm / °C or less. The difference may also be 35 ppm / °C or less. The difference may also be 30 ppm / °C or less. The difference may be 5 ppm / °C or more. In such cases, the thermal stress intensity generated within the core layer 10 during the process of forming the insulating layer on the core layer 10 can be reduced to a certain level or less.

[0152] The difference between the thermal expansion coefficient α1 value of the sealing layer 50 and the thermal expansion coefficient value of the core layer 10 is the absolute value obtained by subtracting the thermal expansion coefficient value of the core layer 10 from the thermal expansion coefficient α1 value of the sealing layer 50.

[0153] The thermal expansion coefficient α2 value of the sealing layer 50 may be 140 ppm / °C or less. The α2 value may also be 135 ppm / °C or less. The α2 value may also be 130 ppm / °C or less. The α2 value may also be 125 ppm / °C or less. The α2 value may also be 120 ppm / °C or less. The α2 value may also be 115 ppm / °C or less. The α2 value may also be 110 ppm / °C or less. The α2 value may be 100 ppm / °C or more.

[0154] In such cases, when the packaging substrate 110 is exposed to a high-temperature environment during the manufacturing process, damage to the core layer 10 caused by the sealing layer 50 can be reliably suppressed.

[0155] The thermal expansion coefficient α1 value is the thermal expansion coefficient of the object measured in the temperature range from room temperature to the glass transition temperature of the object. The thermal expansion coefficient α2 value is the thermal expansion coefficient of the object measured in the temperature range above the glass transition temperature of the object.

[0156] The coefficient of thermal expansion can be measured using a thermal mechanical analyzer (TMA) with thermomechanical analysis. For example, the coefficient of thermal expansion can be measured using the TMA of TA Instruments' Q400 model.

[0157] In the embodiment, the elasticity of the sealing layer 50 can be controlled within a range predetermined in the embodiment. In this case, the force exerted on the inner surface 13 of the cavity by the sealing layer 50, which expands due to thermal expansion in a high-temperature manufacturing environment, can be reduced.

[0158] The elastic modulus of the sealing layer 50 can be 10 GPa to 30 GPa. The elastic modulus may be 11 GPa or higher. The elastic modulus may be 12 GPa or higher. The elastic modulus may be 25 GPa or lower. The elastic modulus may be 20 GPa or lower. The elastic modulus may be 15 GPa or lower. In such cases, the stress applied to the inner surface 13 of the cavity at high temperatures can be reduced.

[0159] The elastic modulus of the sealing layer 50 can be measured through dynamic mechanical analysis (DMA).

[0160] The glass transition temperature of the sealing layer 50 may be 70°C to 130°C. The glass transition temperature may be 80°C or higher. The glass transition temperature may be 90°C or higher. The glass transition temperature may be 100°C or higher. The glass transition temperature may be 125°C or lower. The glass transition temperature may be 120°C or lower. The glass transition temperature may be 115°C or lower. Through this, the sealing layer 50 may have the flexibility to be suitable for application to the core layer 10 and may help to stably fix the element portion 20.

[0161] The glass transition temperature is measured using a differential scanning calorimeter (DSC). Specifically, after placing the test specimen in the differential scanning calorimeter, a primary scan is performed using a heating rate of 10°C / min. After quenching the test specimen, a secondary scan is performed under the same conditions as the primary scan to measure the glass transition temperature and other parameters.

[0162] For example, the glass transition temperature of the sealing layer can be determined using TA's Q2000 model.

[0163] After forming the sealing layer 50, the adhesive film 30 can be peeled off and removed.

[0164] Steps following the sealing layer formation step The manufacturing method for the packaging substrate in the embodiment may further include a redistribution layer formation step after the sealing layer formation step.

[0165] In the redistribution layer formation step, the redistribution layer can be formed on the core layer 10 and the sealing layer 50. In the redistribution layer formation step, the redistribution layer can be formed below the core layer 10 and the sealing layer 50.

[0166] The redistribution layer formation step may include the process of forming a conductive layer and the process of forming an insulating layer.

[0167] In the process of forming the conductive layer, the conductive layer may be formed on the surface of the core layer 10 and / or on the insulating layer. When forming a conductive layer on a mounted device, an insulating layer can be formed first on the upper surface of the device, and then the conductive layer can be formed on the insulating layer.

[0168] The conductive layer may be formed using a dry or wet method.

[0169] The dry method involves sputtering in the region where the conductive layer will be placed to form a seed layer, and then plating the region where the seed layer has been formed to form the conductive layer. When forming the seed layer, metals such as titanium, chromium, and nickel may be sputtered, or these metals and copper may be applied together during sputtering. Through sputtering, an anchoring effect occurs in which the surface on which the conductive layer will be placed and the deposited metal particles interact, which can improve the adhesion of the conductive layer.

[0170] The wet method involves applying a primer to the area where a conductive layer needs to be formed, followed by metal plating. The primer may contain compounds with functional groups such as amines. Depending on the desired degree of adhesion, the primer may contain both a compound with functional groups such as amines and a silane coupling agent. When using a silane coupling agent, the surface to be primed can be pre-treated with the silane coupling agent, and then a compound with amine groups can be applied to the pre-treated area to form the primer layer.

[0171] After forming a seed layer or primer layer, a conductive layer can be formed by plating with a metal. Copper plating may be applied during the formation of the conductive layer, but is not limited to this. Before metal plating, parts of the seed layer or primer layer where conductive layer formation is unnecessary can be deactivated, or parts where conductive layer formation is necessary can be activated before plating. The activation or deactivation treatment method may include light irradiation treatment using a laser of a specific wavelength, chemical treatment, etc. However, after metal plating without applying activation or deactivation treatment, the conductive layer can be etched and patterned according to a pre-designed shape.

[0172] In the redistribution layer formation step, an insulating layer may be formed so as to surround at least a portion of the conductive layer. The insulating layer may be formed so as to surround at least a portion of the upper surface of the conductive layer. The insulating layer may be formed so as to surround at least a portion of the side surface of the conductive layer.

[0173] The insulating layer and the conductive layer may be arranged in a mixed configuration on the core layer 10. The conductive layer having a patterned shape may be formed in a form embedded within the insulating layer.

[0174] The insulating layer can be any material that can be applied as an insulating layer to semiconductor devices or packaging substrates. For example, the insulating layer may be an epoxy resin containing fillers. The insulating layer may also be formed, for example, by build-up layer materials such as Ajinomoto's ABF (Ajinomoto Build-up Film), undercoat materials, etc., but is not limited to these.

[0175] The insulating layer can be formed by laminating an uncured or semi-cured insulating film and then curing it.

[0176] In the redistribution layer formation step, the packaging substrate 110 can be provided by completing the formation of a redistribution layer having a pre-designed structure on the upper and / or lower side of the core layer 10.

[0177] Other steps If necessary, upper terminals and the like can be additionally formed on the top and / or sides of the packaging substrate 110, and bumps can be additionally formed on the bottom of the packaging substrate 110. The bumps can be positioned in a predetermined manner beneath the redistribution layer located beneath the core layer 10. Exemplariously, the bumps may be positioned on a portion of the bottom surface of the packaging substrate 110 so as to be in contact with the main board or the like.

[0178] Manufacturing method of a packaging substrate according to other examples Figure 4 is a cross-sectional view illustrating a spare substrate provided by a preparation step according to another embodiment of the embodiment, and Figure 5 is a cross-sectional view illustrating a packaging substrate provided by a sealing layer formation step according to another embodiment of the embodiment. The embodiment will be described below with reference to Figures 4 and 5.

[0179] A method for manufacturing a packaging substrate according to other embodiments of this specification includes: a preparation step of providing a preliminary substrate 100 including an element portion 20 containing an element and a core layer 10 which is a glass substrate on which the element portion 20 is mounted; and a sealing layer forming step of manufacturing a packaging substrate 110 by forming a sealing layer 50 surrounding at least a portion of the element portion 20 with a sealing layer manufacturing composition.

[0180] The core layer 10 includes a cavity portion 11, which is a space formed by a recess on its upper surface.

[0181] The element portion 20 is placed in the cavity portion 11.

[0182] The core layer 10 may be the glass substrate core layer described above. The element part 20, spare substrate 100, encapsulation layer manufacturing composition, and encapsulation layer 50 may be the element part 20, spare substrate 100, encapsulation layer manufacturing composition, and encapsulation layer 50 described above. The description of the composition, physical properties, and structure of the core layer 10, element part 20, spare substrate 100, encapsulation layer manufacturing composition, and encapsulation layer 50 will be omitted as it will be redundant with the above description.

[0183] The cavity portion 11 may include a cavity opening 12 located on the upper side of the core layer 10, an inner cavity surface 13 connected to the cavity opening 12 and extending in the thickness direction of the core layer 10, and an element mounting space 14 surrounded by the inner cavity surface 13.

[0184] The term "space formed by a recess on the upper surface of the core layer 10" is interpreted to include both a space formed by a recess on a portion of the upper surface of the core layer 10 in the thickness direction of the core layer 10, and a space formed by a recess that penetrates through the core layer 10 in the thickness direction.

[0185] The cavity opening 12 may be positioned in contact with the upper surface of the core layer 10. The cavity opening 12 may constitute the inner edge of the upper surface of the core layer 10.

[0186] The statement that the cavity inner surface 13 is formed extending in the thickness direction of the core layer 10 is interpreted to mean not only that the cavity inner surface 13 is perpendicular to the upper surface of the core layer 10, but also that at least a portion of the cavity inner surface 13 forms an angle (inclination angle) other than 90° with the upper surface.

[0187] The inner surface 13 of the cavity may be flat or it may be a curved surface.

[0188] At least one side surface of the element portion 20 may be positioned at a distance from the cavity inner surface 13 that faces the aforementioned side surface.

[0189] The sealing layer formation step may include a placement step of placing the sealing layer manufacturing composition between the inner surface 13 of the cavity and one side of the element portion 20, and a curing step of curing the sealing layer manufacturing composition to form a sealing layer 50.

[0190] The sealing layer formation step may be the one described above. The explanation of the sealing layer formation step will be omitted as it will overlap with the previously mentioned content.

[0191] At least one side surface of the element portion 20 may be positioned at a distance from the cavity inner surface 13 that faces the aforementioned side surface.

[0192] The spare substrate 100 may have Arg, eh, and g values ​​in formula 1 within the aforementioned numerical range. The explanation of Arg, eh, and g values ​​for the spare substrate 100 is omitted as it overlaps with the content described above.

[0193] The sealing layer 50 may have the physical properties of the sealing layer 50 described above. The explanation of the physical properties of the sealing layer 50 will be omitted as it will be redundant with the above.

[0194] The composition for manufacturing the sealing layer may have the composition described above. The explanation of the composition of the sealing layer will be omitted as it will be redundant with the previous explanation.

[0195] The following examples will provide a more detailed explanation of the implementation through specific embodiments. These embodiments are merely illustrative to aid in understanding the implementation, and the scope of implementation is not limited to them.

[0196] Manufacturing example: Formation of packaging substrates Experimental Example 1: A glass substrate with a thickness of 510 μm and a full cavity with dimensions of 40 mm to 60 mm in width and 40 mm to 60 mm in height was prepared. An element with a height of 480 μm was placed in the cavity to create a spare substrate. The distance between the inner surface of the cavity and the element was set to 150 μm, and the element was fixed by attaching polyimide tape to the underside of the glass substrate.

[0197] Using injection molding equipment, the empty space formed between the element and the inner surface of the cavity was filled with Namics' encapsulation layer manufacturing composition U8410-302SNS8AG. The viscosity of the encapsulation layer manufacturing composition at 25°C was 25,000 cps, and the cylinder tip temperature during filling was set to 40°C to 60°C.

[0198] After filling was complete, the substrate was heat-treated at 150°C to 160°C for 1 to 2 hours to form a sealing layer, and the polyimide tape was peeled off to manufacture the packaging substrate.

[0199] Experimental Example 2: A spare substrate with the element fixed under the same conditions as in Experimental Example 1 was prepared. The surface of the spare substrate was subjected to plasma treatment. A plasma power of 6000W was applied, 500 sccm of oxygen gas was introduced as the atmospheric gas, and the plasma treatment was performed for 20 seconds.

[0200] After the plasma treatment was completed, a sealing layer was formed under the same conditions as in Experimental Example 1 to manufacture a packaging substrate.

[0201] Experimental Example 3: The packaging substrate was manufactured under the same conditions as in Experimental Example 2, except that the plasma power was set to 3000W.

[0202] Experimental Example 4: The packaging substrate was manufactured under the same conditions as in Experimental Example 2, except that the plasma power was set to 1000W.

[0203] Experimental Example 5: The packaging substrate was manufactured under the same conditions as in Experimental Example 2, except that the plasma power was set to 300W.

[0204] Experimental Example 6: Packaging substrates were manufactured under the same conditions as in Experimental Example 5, except that the flow rate of the atmospheric gas was set to 100 sccm.

[0205] Experimental Example 7: The surface of the glass substrate used in Experimental Example 1 was subjected to plasma treatment. A plasma power of 6000W was applied, 500 sccm of oxygen gas was introduced as the atmospheric gas, and the plasma treatment was performed for 20 seconds.

[0206] After plasma treatment, an element with a height of 480 μm was placed in the cavity and a spare substrate was prepared. The distance between the inner surface of the cavity and the element was set to 150 μm, and the element was fixed by attaching polyimide tape to the underside of the glass substrate.

[0207] After fixing the elements, a packaging substrate was manufactured by forming a sealing layer under the same conditions as in Experimental Example 1.

[0208] Experimental Example 8: The packaging substrate was manufactured under the same conditions as in Experimental Example 7, except that the plasma power was set to 3000W.

[0209] Experimental Example 9: The packaging substrate was manufactured under the same conditions as in Experimental Example 7, except that the plasma power was set to 1000W.

[0210] The process conditions for each experimental example are listed in Table 1 below.

[0211] Evaluation example: Evaluation of the contact angle of water with respect to the surface of a glass substrate. In the manufacturing process of packaging substrates for each experimental example, the contact angle of water with respect to the inner surface of the cavity was measured using a surface analyzer immediately before filling the cavity with the encapsulation layer manufacturing composition. Specifically, water was dropped onto the inner surface of the cavity and the contact angle was measured using a surface analyzer.

[0212] The measured values ​​for each experimental example are listed in Table 2 below.

[0213] Evaluation example: Evaluation of the presence or absence of void formation within the sealing layer.

[0214] The presence or absence of voids in the sealing layer formed on the packaging substrates of Experimental Examples 2-9 was observed using an optical microscope and a TEM (Transmission Electron Microscope).

[0215] A rating of P was given if no voids were found within the sealing layer, and an F rating was given if voids were found.

[0216] The evaluation results for each experimental example are shown in Table 2 below.

[0217] Evaluation example: Ink leakage evaluation The underside of the packaging substrates in Experimental Examples 2-9 was observed with an optical microscope to measure the extent to which the encapsulation layer manufacturing composition leaked beyond the inner surface of the cavity. Specifically, when observing the underside of the packaging substrate, a first point was identified at the corner formed by the intersection of the inner surface of the cavity and the underside of the packaging substrate. A straight line was drawn perpendicular to the corner from the first point to identify a second point where the straight line intersects with the edge of the encapsulation layer formed on the underside of the packaging substrate. The distance between the first and second points was measured. The maximum value of the measured distance was calculated and used as the ink leakage distance for that experimental example.

[0218] The measured values ​​for each experimental example are listed in Table 2 below.

[0219] Evaluation Example: Evaluation of the peelability of polyimide tape In the manufacturing process of the packaging substrates in Experimental Examples 4, 6-9, the adhesive strength between the sealing layer and the polyimide tape was measured using a 180° peel test with an XYZ TEC Condor Sigma bond tester after the formation of the sealing layer was completed. The measurement speed (peel speed) was set to 10 mm / s, and the measurement distance (peel distance) was set to 70 mm.

[0220] The measured values ​​for each experimental example are listed in Table 2 below.

[0221] Evaluation example: Evaluation of whether or not adhesive residue remains. The underside of the packaging substrates in Experimental Examples 4, 6-9 was observed using an optical microscope and a TEM (Transmission Electron Microscope) to determine whether or not adhesive material from the polyimide film remained on the underside of the packaging substrate. A rating of P was given if no adhesive material remained, and an F rating was given if adhesive material remained.

[0222] The evaluation results for each experimental example are shown in Table 2 below.

[0223] [Table 1]

[0224] [Table 2]

[0225] In the contact angle measurement results described in Table 2 above, Experimental Example 1, where plasma treatment was not applied, showed a value of 100° or more, while Experimental Examples 2 to 9, where plasma treatment was applied, showed a value of 30° or less.

[0226] In evaluating the presence or absence of void formation, no voids were found in experimental examples 2-9 where plasma treatment was applied.

[0227] In the ink leakage evaluation, experimental examples 7-9, in which the elements were fixed after plasma treatment, measured leakage of less than 0.5 mm, whereas among experimental examples 2-6, in which plasma treatment was performed after fixing the elements, experimental examples 2, 3, and 5 measured leakage of 6 mm or more.

[0228] In evaluating the peel strength of polyimide tape, in experimental examples 7-9, where the elements were fixed after plasma treatment, the peel strength was measured to be less than 150 gf / cm2, and no adhesive residue was found. In contrast, in experimental examples 4 and 6, where plasma treatment was performed after fixing the elements, the peel strength was 400 gf / cm2 or higher, and adhesive residue was found.

[0229] Manufacturing example: Formation of packaging substrates Example 1: A glass substrate with a thickness of 510 μm and a full cavity measuring 40 mm to 60 mm in width and 40 mm to 60 mm in height was provided. An element with a height of 480 μm was placed in the cavity. A distance of 150 μm was applied between the inner surface of the cavity and the element, and polyimide tape was attached to the underside of the glass substrate to fix the position of the element.

[0230] Subsequently, using injection molding equipment, the empty space formed between the element and the inner surface of the cavity was filled with Namics' encapsulation layer manufacturing composition U8410-302SNS8AG. During filling, the cylinder tip temperature was set to 40°C to 60°C.

[0231] After filling was complete, the substrate was heat-treated at 150°C to 160°C for 1 to 2 hours to form a sealing layer.

[0232] After forming the sealing layer, an insulating layer was formed by laminating and curing a 20 μm thick build-up film, ABF GL103, onto the glass substrate, and then a packaging substrate was provided.

[0233] Example 2: A packaging substrate was prepared under the same conditions as in Example 1, except that Namics' U8410-207R6 product was used as the composition for manufacturing the encapsulation layer.

[0234] Example 3: A packaging substrate was prepared under the same conditions as in Example 1, except that Namics' U8410-302 product was used as the composition for manufacturing the encapsulation layer.

[0235] Comparative Example 1: A packaging substrate was prepared under the same conditions as in Example 1, except that Polytech's 8803LF (Rev.3) product was used as the composition for manufacturing the encapsulation layer.

[0236] Comparative Example 2: The packaging substrate was prepared under the same conditions as in Example 1, except that Namics' U8437-2 product was used as the composition for manufacturing the encapsulation layer.

[0237] Comparative Example 3: The packaging substrate was prepared under the same conditions as in Example 1, except that Namics' U8410-406 product was used as the composition for manufacturing the encapsulation layer.

[0238] Comparative Example 4: A packaging substrate was prepared under the same conditions as in Example 1, except that Polytech's 8507FS product was used as the composition for manufacturing the encapsulation layer.

[0239] The process conditions for each example and comparative example are shown in Table 3 below.

[0240] Evaluation example: Evaluation of the physical properties of the sealing layer The thermal expansion coefficients of the sealing layer and glass substrate were measured for each example and comparative example. The thermal expansion coefficients were measured using a TA Instruments Q400 TMA (Thermal Mechanical Analyzer) by thermomechanical analysis.

[0241] Subsequently, after separating a portion of the sealing layer from the packaging substrates for each example and comparative example, the elastic modulus of the sealing layer was measured from the separated sealing layer. The elastic modulus was measured by dynamic mechanical analysis (DMA).

[0242] Then, the glass transition temperature of the separated sealing layer was measured using a differential scanning calorimeter (DSC) from TA Corporation, specifically the Q2000.

[0243] The measured values ​​for each example and comparative example are shown in Table 4 below.

[0244] Evaluation example: Evaluation of whether or not cracks occur in a glass substrate. In the manufacturing process of the packaging substrates for each example and comparative example, the sealing layer was formed by placing and curing the sealing layer composition within the glass substrate, and then the glass substrate was observed with an optical microscope.

[0245] After forming the sealing layer, a build-up film was laminated and cured on the glass substrate to form an insulating layer, and the glass substrate was observed with an optical microscope.

[0246] After the insulating layer was formed, the packaging substrate was left at 120°C for 20 minutes to complete the final curing, and then the glass substrate was observed with an optical microscope.

[0247] In this test, defects with a length of 100 μm or more within the glass substrate were identified as cracks. A grade of P was assigned if no cracks occurred, and a grade of F was assigned if cracks occurred.

[0248] The evaluation results for each example and comparative example are shown in Table 5 below.

[0249] Evaluation example: Evaluation of moisture resistance The packaging substrates for each example and comparative example were left in an atmosphere of 125°C for 24 hours, and then left in an atmosphere of 30°C and 60% RH for 96 hours. After that, the presence or absence of delamination in the sealing layer and insulating layer was observed using an optical microscope. A rating of P was given if no delamination occurred in the sealing layer and insulating layer, and an F rating was given if delamination occurred in at least one of the sealing layer and insulating layer.

[0250] The evaluation results for each example and comparative example are shown in Table 5 below.

[0251] Evaluation example: Evaluation of heat resistance The temperature of the atmosphere in which the packaging substrates for each example and comparative example were placed was lowered to -40°C, then the atmosphere temperature was raised to 165°C over 1 hour and maintained at 165°C for 2 hours. After that, the atmosphere temperature was lowered to -40°C over 1 hour. This process was considered one thermal cycle, and a total of 100 thermal cycles were performed. The presence or absence of cracks in the glass substrate and delamination of the sealing layer were observed using an optical microscope.

[0252] Subsequently, a total of 400 additional thermal cycles were performed, and the presence or absence of cracks in the glass substrate and delamination of the sealing layer were observed using an optical microscope.

[0253] Observation with an optical microscope revealed that a grade of P was given if no cracks occurred in the glass substrate and no delamination occurred in the sealing layer or insulating layer. A grade of F was given if cracks occurred in the glass substrate or delamination occurred in at least one of the sealing layer or insulating layer.

[0254] The evaluation results for each example and comparative example are shown in Table 5 below.

[0255] Evaluation example: Evaluation of HTSL (High Temperature Storage Life) After heating the packaging substrates for each example and comparative example at 1500°C for 500 hours, the presence or absence of cracks in the glass substrate and the presence or absence of delamination of the sealing layer and insulating layer were evaluated.

[0256] A rating of P was given if no cracks occurred in the glass substrate and no delamination occurred in the sealing layer and insulating layer. A rating of F was given if cracks occurred in the glass substrate or delamination occurred in at least one of the sealing layer and insulating layer.

[0257] The evaluation results for each example and comparative example are shown in Table 5 below.

[0258] [Table 3]

[0259] [Table 4]

[0260] [Table 5]

[0261] In Table 5, Examples 1 to 4 were all rated as P in the evaluation of crack occurrence, moisture resistance, heat resistance, and HTSL, whereas Comparative Example 1 was rated as F in the evaluation of moisture resistance, heat resistance, and HTSL. These evaluation results support the idea that applying the encapsulation layer manufacturing composition of the embodiment, with controlled viscosity, to a packaging substrate manufacturing method and adjusting the position of the element portion within the cavity to the desired location in the embodiment can improve the moisture resistance, heat resistance, and peel resistance of the encapsulation layer, and contribute to reducing stress acting on the glass substrate.

[0262] Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto. Various modifications and improvements by those skilled in the art, utilizing the basic concepts of the present invention as defined in the appended claims, also fall within the scope of the present invention. [Explanation of symbols]

[0263] 100 spare circuit boards 110 Packaging substrates 10-core layer 11 Cavity section 12 Cavity openings 13. Inner surface of the cavity 14. Element mounting space 20 Element section 30 Adhesive film 40 Cavity Conduction Layer 50 sealing layer

Claims

1. A preparation step of providing a preliminary substrate including a core layer in which a cavity portion is formed, which includes an element mounting space and the inner surface of the cavity surrounding the element mounting space, A surface treatment step to increase the surface energy of at least a portion of the inner surface of the cavity, The element mounting step involves mounting the element portion in the cavity portion after the surface treatment step has been completed, A method for manufacturing a packaging substrate, comprising: a sealing layer forming step of forming a sealing layer surrounding at least a portion of the surface of the element portion with a sealing layer manufacturing composition; and manufacturing a packaging substrate.

2. The aforementioned spare substrate further includes a cavity conductive layer formed on the inner surface of the cavity, The inner surface of the cavity includes an exposed region that is not covered by the cavity conductive layer. The method for manufacturing a packaging substrate according to claim 1, wherein the surface treatment step increases the surface energy of the cavity conductive layer and the exposed region.

3. The method for manufacturing a packaging substrate according to claim 1, wherein in the surface treatment step, at least a portion of the inner surface of the cavity is subjected to plasma treatment.

4. The method for manufacturing a packaging substrate according to claim 3, wherein in the surface treatment step, the atmospheric gas contains 50% by volume or more of oxygen gas.

5. The method for manufacturing a packaging substrate according to claim 3, wherein the plasma power in the surface treatment step is 50 W or more.

6. The method for manufacturing a packaging substrate according to claim 3, wherein the surface treatment step is performed for 15 to 60 seconds.

7. The method for manufacturing a packaging substrate according to claim 3, wherein the surface treatment step involves plasma treatment with an atmospheric gas at 50 sccm to 1000 sccm.

8. The method for manufacturing a packaging substrate according to claim 1, wherein in the surface treatment step, the contact angle of water with the inner surface of the cavity is adjusted to 60° or less.

9. The element portion includes a side surface that is spaced apart from the inner surface of the cavity, A method for manufacturing a packaging substrate according to claim 1, wherein Arg, which is the gap aspect ratio in the following formula 1, is 30 or less. (In the above formula 1, The aforementioned eh is the height of the element portion, (The value g is the minimum distance between the first point located within the side surface of the element portion and the second point located on the inner surface of the cavity.)

10. The method for manufacturing a packaging substrate according to claim 9, wherein the g value is 20 μm to 500 μm.

11. The method for manufacturing a packaging substrate according to claim 1, wherein the viscosity of the encapsulation layer manufacturing composition at 25°C is 12,000 cps to 38,000 cps.

12. The method for manufacturing a packaging substrate according to claim 1, wherein the composition for manufacturing the sealing layer contains 45% by weight or more and 80% by weight or less of a filler.

13. The method for manufacturing a packaging substrate according to claim 1, wherein the difference between the thermal expansion coefficient α1 value of the sealing layer and the thermal expansion coefficient value of the core layer is 40 ppm / °C or less.

14. The method for manufacturing a packaging substrate according to claim 1, wherein the thermal expansion coefficient α2 of the sealing layer is 140 ppm / °C or less.

15. The method for manufacturing a packaging substrate according to claim 1, wherein the elastic modulus of the sealing layer is 10 GPa to 30 GPa.

16. The method for manufacturing a packaging substrate according to claim 1, wherein the glass transition temperature of the sealing layer is 70°C to 130°C.

17. The method for manufacturing a packaging substrate according to claim 1, wherein the composition for manufacturing the sealing layer comprises an epoxy resin and a curing agent.

18. The method for manufacturing a packaging substrate according to claim 1, wherein the composition for manufacturing the sealing layer contains 45% by weight or more and 80% by weight or less of a filler.

19. A preparation step of providing a spare substrate including an element section containing an element and a core layer which is a glass substrate on which the element section is mounted, The process includes a sealing layer forming step of forming a sealing layer surrounding at least a portion of the element portion with a sealing layer manufacturing composition to manufacture a packaging substrate, The core layer includes a cavity portion, which is a space formed by a recess on the upper surface. The element portion is arranged in the cavity portion, A method for manufacturing a packaging substrate, wherein the viscosity of the encapsulation layer manufacturing composition at 25°C is 12,000 cps to 38,000 cps.

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