Substrate processing apparatus, electromagnetic wave shielding adjustment method, semiconductor device manufacturing method, and program

Abstract

We provide technology that can prevent the leakage of electromagnetic waves. [Solution] A plasma generation unit having a container for processing a substrate, an electrode provided on the outer circumference of the container to which high-frequency power is applied, a power supply path connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the power supply path; a shield provided on the outer circumference of the electrode to shield electromagnetic waves radiated from the electrode; an opening provided in the shield through which the power supply path is inserted; a plurality of shielding parts provided so as to overlap each other around the opening and around a location of the supply unit facing the opening; and a control unit capable of controlling the plasma generation unit to move relative to the shield.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, an electromagnetic wave shielding adjustment method, a method for manufacturing a semiconductor device, and a program.

Background Art

[0002] As one step in the manufacturing process of a semiconductor device, a process of modifying a film formed on a substrate by plasma may be performed (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technology capable of preventing electromagnetic wave leakage.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, a container for processing a substrate, an electrode provided on the outer periphery of the container to which high-frequency power is applied, a power supply path connected to the electrode, and a supply unit for supplying the high-frequency power to the electrode via the power supply path, a plasma generation unit having the same, a shield provided on the outer periphery of the electrode for shielding electromagnetic waves radiated from the electrode, an opening provided in the shield through which the power supply path is inserted, a plurality of shielding portions provided so as to overlap each other around the opening and around a location of the supply unit facing the opening, a control unit capable of controlling the plasma generation unit to move relative to the shield, A technology including the above is provided. [Effects of the Invention]

[0006] According to this disclosure, it becomes possible to prevent the leakage of electromagnetic waves. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic diagram showing a substrate processing apparatus according to one aspect of the present disclosure. [Figure 2] This is a schematic diagram illustrating a plasma generation unit according to one aspect of this disclosure. [Figure 3] This is a control block diagram showing the control system of a controller for a substrate processing apparatus according to one aspect of the present disclosure. [Figure 4] A flowchart illustrating a substrate processing step according to one aspect of this disclosure. [Modes for carrying out the invention]

[0008] The following description will explain one aspect of this disclosure, primarily with reference to Figures 1 to 4. Note that the drawings used in the following description are all schematic. Furthermore, the dimensional relationships and ratios of the elements shown in the drawings do not necessarily correspond to those of reality. Moreover, the dimensional relationships and ratios of the elements do not necessarily correspond between multiple drawings.

[0009] (1) Configuration of substrate processing apparatus As shown in Figure 1, the substrate processing apparatus 100 includes a processing furnace 202 for plasma processing a wafer 200 as a substrate. The processing furnace 202 is provided with a processing container 203, which constitutes a processing chamber 201. That is, the substrate processing apparatus 100 is configured to plasma process the wafer 200 inside the processing container 203. The processing container 203 includes a dome-shaped upper container 210 and a bowl-shaped lower container 211.

[0010] The processing chamber 201 is formed when the upper container 210 is placed over the lower container 211. The upper container 210 is made of, for example, quartz (SiO2), and the lower container 211 is made of, for example, aluminum (Al).

[0011] Furthermore, as shown in Figure 1, a gate valve 244 is provided on the lower side wall of the lower container 211. When the gate valve 244 is open, it is configured to allow wafers 200 to be loaded into the processing chamber 201 via the loading / unloading port 245 using a transport mechanism (not shown), or to load wafers 200 to the outside of the processing chamber 201. When the gate valve 244 is closed, it is configured to act as a gate valve to maintain the airtightness of the processing chamber 201.

[0012] The processing chamber 201 has a plasma generation space 201a, which is surrounded by resonant coils 212 as electrodes, and a substrate processing space 201b which is in communication with the plasma generation space 201a and in which the wafer 200 is processed. The plasma generation space 201a is the space in which plasma is generated, and is the space in the processing chamber 201 that is above the lower end of the resonant coil 212 and below the upper end of the resonant coil 212. On the other hand, the substrate processing space 201b is the space in which the wafer 200 is processed using plasma, and is the space below the lower end of the resonant coil 212.

[0013] [Suscepter 217] As shown in Figure 1, the susceptor 217, which serves as a substrate mounting section on which the wafer 200 is placed, is positioned in the center of the bottom of the processing chamber 201.

[0014] A heater 217b, which serves as a heating mechanism, is integrally embedded inside the susceptor 217.

[0015] The susceptor 217 is electrically insulated from the lower container 211. An impedance adjustment electrode 217c is installed inside the susceptor 217. The impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275, which acts as an impedance adjustment unit.

[0016] Further, the susceptor 217 is provided with a susceptor lifting mechanism 268 having a drive mechanism for lifting and lowering the susceptor. Further, the susceptor 217 is provided with a through hole 217a, and a wafer pushing-up pin 266 is provided on the bottom surface of the lower container 211. When the susceptor 217 is lowered by the susceptor lifting mechanism 268, the wafer pushing-up pin 266 is configured to pass through the through hole 217a in a non-contact state with the susceptor 217.

[0017] Mainly, the susceptor 217 and the heater 217b constitute the substrate mounting portion according to this aspect.

[0018] 〔Gas supply unit 230〕 As shown in FIG. 1, the gas supply unit 230 is provided above the processing chamber 201. Specifically, a gas supply head 236 is provided above the processing chamber 201, that is, above the upper container 210. The gas supply head 236 includes a cap-shaped lid 233, a gas inlet 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239, and is configured to supply each gas to the processing chamber 201.

[0019] A gas supply pipe 232 is connected to the gas inlet 234. The gas supply pipe 232 is connected such that the downstream end of the first gas supply pipe 232a for supplying the first gas, the downstream end of the second gas supply pipe 232b for supplying the second gas, and the inert gas supply pipe 232c for supplying the inert gas merge.

[0020] The first gas supply pipe 232a is equipped with, from upstream, a mass flow controller (MFC) 252a as a flow control device and a valve 253a as an on / off valve. The second gas supply pipe 232b is equipped with, from upstream, an MFC 252b and a valve 253b. The inert gas supply pipe 232c is equipped with, from upstream, an MFC 252c and a valve 253c. Although not included in the substrate processing apparatus 100, a first gas supply source 250a is provided upstream of the MFC 252a in the first gas supply pipe 232a, a second gas supply source 250b is provided upstream of the MFC 252b in the second gas supply pipe 232b, and an inert gas supply source 250c is provided upstream of the MFC 252c in the inert gas supply pipe 232c.

[0021] A valve 243a is provided in the gas supply pipe 232. The gas supply unit 230 is configured to supply gas for processing the wafer 200 into the processing container 203.

[0022] The gas supply unit 230 (gas supply system) according to this embodiment mainly consists of a gas supply head 236 (cover 233, gas inlet 234, buffer chamber 237, opening 238, shielding plate 240, gas outlet 239), a first gas supply pipe 232a, a second gas supply pipe 232b, an inert gas supply pipe 232c, MFCs 252a, 252b, 252c, and valves 253a, 253b, 253c, 243a. A first gas supply source 250a, a second gas supply source 250b, and an inert gas supply source 250c may also be included in the gas supply unit 230.

[0023] [Exhaust section 228] A gas exhaust port 235 for exhausting gas from the processing chamber 201 is provided on the side wall of the lower container 211. The upstream end of the gas exhaust pipe 231 is connected to the gas exhaust port 235. The gas exhaust pipe 231 is equipped with, in order from the upstream side, an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure adjustment unit), a valve 243b as an on / off valve, and a vacuum pump 246 as a vacuum evacuation device.

[0024] The exhaust section 228 (exhaust system) according to this embodiment mainly consists of a gas exhaust port 235, a gas exhaust pipe 231, an APC valve 242, and a valve 243b. A vacuum pump 246 may also be included in the exhaust section 228.

[0025] [Plasma generation unit 216] As shown in Figures 1 and 2, a resonant coil 212 to which high-frequency power is applied is provided on the outer circumference of the processing container 203, on the outside of the outer wall of the processing container 203. Specifically, a helical resonant coil 212 is provided on the outside of the side wall of the upper container 210, surrounding the processing chamber 201. In other words, a helical resonant coil 212 is provided so as to surround the processing container 203 from the radially outer side of the upper container 210 (the side away from the center of the upper container 210).

[0026] Furthermore, the resonant coil 212 is connected via a power supply line 278 to an RF (Radio Frequency) sensor 272, a high-frequency power supply 273, and a matching unit 274 that matches the impedance and output frequency of the high-frequency power supply 273.

[0027] The high-frequency power supply 273 supplies high-frequency power (RF power) to the resonant coil 212. The RF sensor 272 is located on the output side of the high-frequency power supply 273 and monitors information on the forward and reflected waves of the supplied high-frequency power. The reflected wave power monitored by the RF sensor 272 is input to the matching unit 274, and the matching unit 274 controls the impedance of the high-frequency power supply 273 and the frequency of the output high-frequency power to minimize the reflected wave based on the reflected wave information input from the RF sensor 272.

[0028] The high-frequency power supply 273 includes a power supply control means (control circuit) that includes a high-frequency oscillation circuit and a preamplifier for defining the oscillation frequency and output, and an amplifier (output circuit) for amplifying to a predetermined output. The power supply control means controls the amplifier based on preset frequency and power output conditions via an operation panel. The amplifier supplies a constant high-frequency power to the resonant coil 212 via a transmission line.

[0029] The resonant coil 212 is configured with a winding diameter, winding pitch, and number of turns to resonate at a specific wavelength in order to form a standing wave of a predetermined wavelength. In other words, the electrical length of the resonant coil 212 is configured to be an integer multiple (1, 2, ...) of one wavelength at a predetermined frequency of the high-frequency power supplied from the high-frequency power supply 273. In other words, the substrate processing apparatus 100 is equipped with a high-frequency power supply 273 that supplies high-frequency power to the electrodes having a wavelength that is an integer multiple of the electrical length of the resonant coil 212.

[0030] The materials used to construct the resonant coil 212 include copper pipes, copper sheets, aluminum pipes, aluminum sheets, and polymer belts coated with copper or aluminum.

[0031] Both ends of the resonant coil 212 are electrically grounded, and at least one end is grounded via a movable tap 213 to fine-tune the electrical length of the resonant coil during the initial setup of the device or when processing conditions are changed. Reference numeral 214 in Figure 1 indicates the other fixed ground. Furthermore, to fine-tune the impedance of the resonant coil 212 during the initial setup of the device or when processing conditions are changed, a power supply section is formed between the grounded ends of the resonant coil 212 by a movable tap 215.

[0032] A power supply line 278 that supplies high-frequency power to the resonant coil 212 is connected to the movable tap 215.

[0033] The power supply circuit 278 is plate-shaped and made of a material containing copper, for example. Specifically, the power supply circuit 278 is a copper-containing plate with a width of 50-60 mm and a thickness of approximately 1 mm. In this specification, numerical ranges such as "50-60 mm" mean that the lower and upper limits are included within that range. Therefore, for example, "50-60 mm" means "50 mm or more and 60 mm or less". The same applies to other numerical ranges.

[0034] The RF sensor 272, high-frequency power supply 273, and matching unit 274 are housed within the housing 277a. The RF sensor 272, high-frequency power supply 273, and matching unit 274 are used as a supply unit 277 that supplies high-frequency power to the resonant coil 212 via a power supply line 278. The supply unit 277 is located outside the processing container 203.

[0035] The plasma generation unit 216 according to this embodiment is mainly composed of a resonant coil 212, a power supply line 278, and a supply unit 277.

[0036] As shown in Figure 1, a shield 224 is provided around the outer circumference of the resonant coil 212 to cover the resonant coil 212, shielding electromagnetic waves radiated from the resonant coil 212, and forming a capacitive component (C component) between the resonant coil 212 and the shield, which is one of the components of a resonant circuit.

[0037] Specifically, the shield 224 is formed using a conductive material such as an aluminum alloy. The lower end of the shield 224 is configured to be placed on the upper end formed around the lower container 211.

[0038] An opening 279 is formed on the side of the shield 224 through which the power supply line 278 is inserted. The opening 279 is wider than the width of the power supply line 278.

[0039] An opening shielding portion 280a is provided around the end of the opening 279 as a shielding portion. The opening shielding portion 280a is configured to extend along the power supply line 278 toward the supply unit 277. In other words, the opening shielding portion 280a is configured to cover the perimeter of the power supply line 278.

[0040] Furthermore, a first power supply shielding section 280b and a second power supply shielding section 280c are provided around the position (location) opposite the opening 279 of the supply section 277. The power supply shielding sections 280b and 280c are each configured as part of the housing 277a that constitutes the supply section 277. The shielding section 280 is composed of the opening shielding section 280a, the power supply shielding section 280b, and the power supply shielding section 280c.

[0041] The power supply shielding portion 280b is configured to extend along the power supply path 278 toward the opening 279. The power supply shielding portion 280b is located inside the opening shielding portion 280a and is surrounded by the inner surface of the opening shielding portion 280a.

[0042] The power supply shielding portion 280c is configured to extend along the power supply path 278 toward the shield 224. The power supply shielding portion 280c is located outside the opening shielding portion 280a and is configured to surround the outer surface of the opening shielding portion 280a.

[0043] In other words, the power supply shielding section 280b and the power supply shielding section 280c are arranged with a gap between them. This allows the supply section 277 to be moved horizontally (also referred to as the front-to-back direction in Figure 1 and the up-and-down direction in Figure 2).

[0044] In other words, the power supply shielding section 280b and the power supply shielding section 280c are configured to cover and sandwich the inner and outer surfaces of the opening shielding section 280a. The wall surface 280d between the power supply shielding section 280b and the power supply shielding section 280c of the housing 277a functions as a shielding section that blocks electromagnetic waves. That is, the wall surface 280d may be included in the shielding section 280.

[0045] In other words, the opening shielding section 280a is configured to be located outside the power supply shielding section 280b and inside the power supply shielding section 280c. To put it another way, the opening shielding section 280a and the power supply shielding sections 280b and 280c are arranged to overlap each other alternately. By arranging the shielding sections 280a, 280b, and 280c to overlap approximately parallel to the power supply line 278 in this manner, electromagnetic waves leaking from the power supply line 278 can be reflected and attenuated by the shielding sections 280a, 280b, 280c and the wall surface 280d. As a result, leakage of electromagnetic waves can be prevented. In this case, it is preferable to increase the amount of overlap between the opening shielding section 280a and the power supply shielding sections 280b and 280c, that is, to increase the range in which the opening shielding section 280a and the power supply shielding sections 280b and 280c overlap alternately. This increases the attenuation of electromagnetic waves leaking from the power supply line 278, thereby further preventing electromagnetic wave leakage.

[0046] A moving mechanism 281 is connected to the plasma generation unit 216 to move the plasma generation unit 216 as a whole. In addition, the aperture shielding unit 280a is configured to have a fixed position relative to the plasma generation unit 216. That is, the shield 224 is configured to have a fixed position relative to the plasma generation unit 216.

[0047] In other words, the plasma generation unit 216 is configured to be movable horizontally relative to the shield 224 (i.e., the aperture shielding unit 280a). Therefore, the power supply shielding units 280b and 280c can be moved relative to the aperture shielding unit 280a, and the gap between the power supply shielding units 280b and 280c and the aperture shielding unit 280a can be adjusted. This makes it possible to fine-tune the impedance while shielding areas where electromagnetic wave leakage is occurring.

[0048] Here, the horizontal width of the gaps formed between the power supply shielding sections 280b and 280c provided in the supply section 277 and the opening shielding section 280a provided in the opening 279 is configured to be greater than the amount by which the plasma generation section 216 moves in a direction parallel to the opening surface of the opening 279. In other words, the amount of horizontal movement of the plasma generation section 216 is set to be less than the horizontal width of the gaps formed between the power supply shielding sections 280b and 280c and the opening shielding section 280a. As a result, even when the plasma generation section 216 is moved by the movement mechanism 281, gaps are formed between the opening shielding section 280a and the power supply shielding sections 280b and 280c.

[0049] In other words, the moving mechanism 281 allows the supply unit 277, the power supply line 278, and the resonant coil 212 to move simultaneously and integrally horizontally relative to the shield 224 in which the opening 279 is formed. By configuring the system so that only the power supply side that supplies high-frequency power to the resonant coil 212 is moved, control becomes easier.

[0050] [Controller 221] As shown in Figure 1, the controller 221, acting as the control unit, is configured to control the APC valve 242, valve 243b and vacuum pump 246 via signal line A, the susceptor lifting mechanism 268 via signal line B, and the heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C. Furthermore, the controller 221 is configured to control the gate valve 244 via signal line D, the RF sensor 272, high-frequency power supply 273, matching unit 274 and moving mechanism 281 via signal line E, and the MFCs 252a to 252c and valves 253a to 253c and 243a via signal line F.

[0051] As shown in Figure 3, the controller 221 is configured as a computer equipped with a CPU (Central Processing Unit) 221a, RAM (Random Access Memory) 221b, storage device 221c, and I / O port 221d. The RAM 221b, storage device 221c, and I / O port 221d are configured to exchange data with the CPU 221a via an internal bus 221e. An input / output device 222, configured as, for example, a touch panel or display, is connected to the controller 221.

[0052] Here, the input / output device 222 receives input for operation commands and processing conditions as movement information for moving the moving mechanism 281. The input / output device 222 also displays the amount of movement of the moving mechanism 281 relative to a predetermined reference position.

[0053] Specifically, the input / output device 222 is used as a display unit having a screen on which the movement distance of the plasma generation unit 216 can be set, and as an operation unit on which the amount of movement (also called the movement distance) of the plasma generation unit 216 can be set. In other words, the input / output device 222 allows the setting of the amount of horizontal movement of the movement mechanism 281 on the display screen. That is, the CPU 221a is configured to display the output result on the input / output device 222 and to set the horizontal movement distance based on the input from the input / output device 222, thereby controlling the movement of the movement mechanism 281.

[0054] The storage device 221c is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage device 221c contains, in a readable format, control programs that control the operation of the board processing device, process recipes that describe the procedures and conditions for board processing (described later), and recipe execution programs for executing the process recipes.

[0055] The recipe execution program is a combination of components that cause the CPU 221a to execute each step in the substrate processing process described later, thereby obtaining a predetermined result, and functions as a program. Hereinafter, this recipe execution program and control program will be collectively referred to simply as a program (program product). In this specification, the term "program" may include only the recipe execution program, only the control program, or both. The RAM 221b is configured as a memory area (work area) where programs and data read by the CPU 221a are temporarily held.

[0056] In this embodiment, the memory device 221c stores each processing condition. The processing condition includes at least one of the following: the temperature of the wafer 200 to be processed, the pressure of the processing chamber 201, the type of gas used to process the wafer 200, the flow rate of the gas used to process the wafer 200, the power supplied to the resonant coil 212, and the amount of horizontal movement of the plasma generation unit 216 by the moving mechanism 281.

[0057] I / O port 221d is connected to the MFCs 252a to 252c, valves 253a to 253c, 243a, 243b, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching unit 274, susceptor lifting mechanism 268, heater power adjustment mechanism 276, impedance variable mechanism 275, moving mechanism 281, etc.

[0058] The CPU 221a is configured to read and execute control programs from the storage device 221c, and to read process recipes from the storage device 221c in response to input of operation commands from the input / output device 222.

[0059] The CPU 221a is configured to control the opening adjustment operation of the APC valve 242, the opening and closing operation of the valve 243b, and the starting and stopping of the vacuum pump 246 via the I / O port 221d and signal line A, in accordance with the contents of the read process recipe. Furthermore, the CPU 221a is configured to control the raising and lowering operation of the susceptor lifting mechanism 268 via signal line B, the power supply adjustment operation (temperature adjustment operation) of the heater power adjustment mechanism 276 and impedance variable mechanism 275 to the heater 217b via signal line C, and the opening and closing operation of the gate valve 244 via signal line D. Furthermore, the CPU 221a is configured to control the operation of the RF sensor 272, the matching unit 274, and the high-frequency power supply 273, as well as the movement of the plasma generation unit 216 by the moving mechanism 281, via signal line E, and the flow rate adjustment operation of various gases by MFCs 252a to 252c, as well as the opening and closing operation of valves 253a to 253c and 243a, via signal line F.

[0060] Specifically, the CPU 221a is configured to control the movement of the plasma generation unit 216 horizontally relative to the opening 279. For example, the plasma generation unit 216 can be moved in the direction of stronger electromagnetic waves to match the direction of the electromagnetic waves, thereby narrowing the gap between the opening shielding unit 280a and the power supply shielding units 280b and 280c and attenuating the electromagnetic waves.

[0061] The controller 221 can be configured by installing the above-mentioned program stored in an external storage device (for example, magnetic tape, magnetic disks such as flexible disks or hard disks, optical disks such as CDs or DVDs, or semiconductor memory such as USB memory or memory cards) 223 into a computer. The storage device 221c and the external storage device 223 are configured as recording media that can be read by a computer. Hereinafter, these will be collectively referred to simply as recording media. In this specification, when the term recording media is used, it may include only the storage device 221c, only the external storage device 223, or both. The program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 223, or the program provided by communication means such as the Internet or a dedicated line may be stored in the recording media and used.

[0062] (2) Substrate processing process Using the substrate processing apparatus 100 described above, an example sequence for forming a film containing a predetermined element on a wafer 200 as one step in the substrate processing process of the semiconductor device manufacturing process will be explained with reference to Figure 4. In the following explanation, the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 221.

[0063] [Electromagnetic wave shielding adjustment process] First, the plasma generation unit 216 is moved relative to the shield 224 by the moving mechanism 281, thereby adjusting the positions of the power supply shielding units 280b and 280c relative to the aperture shielding unit 280a. In other words, the horizontal position of the plasma generation unit 216 is moved to a position that shields electromagnetic waves leaking from the resonant coil 212 and the power supply line 278 while making fine adjustments to the impedance.

[0064] [Substrate loading process S110] In the substrate loading process S110, the wafer 200 is loaded into the processing room 201. Specifically, the susceptor lifting mechanism 268 lowers the susceptor 217 to the wafer transport position, and the wafer push-up pin 266 passes through the through-hole 217a of the susceptor 217.

[0065] Next, the gate valve 244 is opened, and the wafer 200 is transported into the processing chamber 201 from the vacuum transport chamber adjacent to the processing chamber 201 using a wafer transport mechanism (not shown). The transported wafer 200 is supported in a horizontal position on the wafer push-up pins 266 that protrude from the surface of the susceptor 217. Once the wafer 200 has been transported into the processing chamber 201, the wafer transport mechanism retracts to the outside of the processing chamber 201, and the gate valve 244 is closed to seal the processing chamber 201. Then, the susceptor lifting mechanism 268 raises the susceptor 217, and the wafer 200 is supported on the upper surface of the susceptor 217.

[0066] [Heating and vacuum evacuation process S120] In the heating and vacuum evacuation process S120, the wafer 200 that has been brought into the processing chamber 201 is heated. The heater 217b is preheated, and the wafer 200 is heated by holding it on the susceptor 217 into which the heater 217b is embedded. Here, the wafer 200 is heated until it reaches the target temperature. While the wafer 200 is being heated, the vacuum pump 246 evacuates the processing chamber 201 via the gas exhaust pipe 231, and sets the pressure in the processing chamber 201 to a predetermined value. The vacuum pump 246 is kept running at least until the substrate removal process S160, described later, is completed.

[0067] [Reaction gas supply process S130] In reaction gas supply process S130, the supply of the first gas and the second gas as reaction gases is started. Specifically, valves 253a and 253b are opened, and the supply of the first gas and the second gas to the processing chamber 201 is started while controlling the flow rate with MFCs 252a and 252b.

[0068] Furthermore, the exhaust of the processing chamber 201 is controlled by adjusting the opening of the APC valve 242 so that the processing chamber 201 reaches the target pressure. In this way, the supply of the first gas and the second gas is continued until the end of the plasma processing step S140, which will be described later, while the processing chamber 201 is appropriately exhausted.

[0069] As the first gas, for example, an oxygen-containing gas can be used. As an oxygen-containing gas, for example, oxygen (O2) gas can be used.

[0070] As the second gas, for example, a hydrogen-containing gas can be used. As a hydrogen-containing gas, for example, hydrogen (H2) gas can be used.

[0071] [Plasma treatment process S140] After the pressure in the processing chamber 201 stabilizes, in the plasma processing step S140, high-frequency power is supplied to the resonant coil 212 from the high-frequency power supply 273 via the RF sensor 272.

[0072] As a result, a high-frequency electric field is formed in the plasma generation space 201a to which the first and second gases are supplied. This electric field excites a donut-shaped induced plasma with the highest plasma density at a height corresponding to the electrical midpoint of the resonant coil 212 in the plasma generation space 201a. The plasma-like first and second gases are plasma-excited and dissociated, generating reactive species such as radicals (active species) and ions of the elements contained in the first and second gases. Specifically, for example, reactive species such as oxygen radicals (oxygen active species) and oxygen ions containing oxygen, and hydrogen radicals (hydrogen active species) and hydrogen ions containing hydrogen are generated.

[0073] Then, radicals and ions generated by the inductive plasma are supplied to trenches on the surface of the wafer 200, which is held on the susceptor 217 in the substrate processing space 201b. The supplied radicals and ions react with the sidewalls of the trenches, and the surface layer is modified. Specifically, for example, the silicon layer on the surface is modified into a silicon oxide layer.

[0074] After a predetermined processing time has elapsed, the power supply from the high-frequency power supply 273 is stopped, and the plasma discharge in the processing chamber 201 is stopped. Valves 253a and 253b are also closed, stopping the supply of the first and second gases to the processing chamber 201. With this, the plasma processing step S140 is completed. In this specification, processing time refers to the time during which the processing continues. This also applies to the following description.

[0075] [Vacuum evacuation process S150] After the supply of the first and second gases is stopped, in the vacuum evacuation process S150, the processing chamber 201 is evacuated via the gas exhaust pipe 231. This exhausts the first and second gases, as well as the exhaust gases generated by the reaction of these gases, to the outside of the processing chamber 201. Subsequently, the opening of the APC valve 242 is adjusted so that the pressure in the processing chamber 201 is the same as the pressure in the vacuum transfer chamber adjacent to the processing chamber 201 (the destination for the wafer 200; not shown).

[0076] [Substrate unloading process S160] After the processing chamber 201 reaches a predetermined pressure, in the substrate unloading process S160, the susceptor 217 descends to the wafer 200's transport position, and the wafer 200 is supported on the wafer push-up pins 266. Then, the gate valve 244 opens, and the wafer 200 is unloaded from the processing chamber 201 using the wafer transport mechanism. This completes the substrate processing process according to this embodiment.

[0077] As explained above, in the substrate processing apparatus 100, the shielding parts 280a, 280b, and 280c provided in the opening 279 and the supply section 277, respectively, are designed to attenuate electromagnetic waves leaking from the power supply line 278. This prevents the leakage of electromagnetic waves.

[0078] In this embodiment, we have described how to prevent electromagnetic wave leakage by moving the supply unit 277 horizontally, but the invention is not limited to this, and the supply unit 277 can also be moved vertically (up and down in Figure 1). By moving the supply unit 277 horizontally or vertically, it becomes possible to further attenuate the electromagnetic waves leaking from the power supply line 278.

[0079] [Other forms] Although one aspect of this disclosure has been specifically described above, this disclosure is not limited to the above-described aspect and can be modified in various ways without departing from its essence.

[0080] In the above-described embodiment, the case in which an opening shielding portion 280a is provided on the opening 279 side and power supply shielding portions 280b and 280c are provided on the supply portion 277 side was used for the explanation, but this disclosure is not limited to this configuration. For example, three or more shielding portions may be provided on the supply portion 277 side, or multiple shielding portions may be provided on the opening 279 side, or multiple shielding portions may be provided on both the opening 279 side and the supply portion 277 side. The same effects as in the above-described embodiment can be obtained in this embodiment as well.

[0081] Furthermore, although the above-described embodiment explained the case in which the electromagnetic wave shielding adjustment process is performed before the substrate loading process S110, this disclosure is not limited thereto. For example, it may be performed after the substrate loading process S110 and before the plasma processing process S140. The same effects as in the above-described embodiment can be obtained in this embodiment as well.

[0082] While the above embodiments have described specific embodiments in detail, this disclosure is not limited to these embodiments, and it will be apparent to those skilled in the art that various other embodiments are possible within the scope of this disclosure.

[0083] Furthermore, although not specifically explained in the above embodiments, unless otherwise specified in the specification, each element is not limited to one, but may be present in multiple forms.

[0084] Furthermore, the above embodiments described an example of forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at a time. This disclosure is not limited to the above embodiments and can be suitably applied, for example, when forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time. Furthermore, the above embodiments described an example of forming a film using a substrate processing apparatus having a cold-wall type processing furnace. This disclosure is not limited to the above embodiments and can be suitably applied when forming a film using a substrate processing apparatus having a hot-wall type processing furnace.

[0085] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above, and the same effects as described above can be obtained.

[0086] The above-described embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions of the above-described embodiments and modifications. [Explanation of symbols]

[0087] 100 Substrate Processing Equipment 200 wafers (an example of a substrate) 203 Processing container (an example of a container) 212 Resonant coil (an example of an electrode) 216 Plasma generation unit 221 Control Unit 224 Shield 277 Supply Department 278 Power supply line 279 Opening 280 Shielding part

Claims

1. A container for processing substrates, A plasma generation unit having an electrode provided on the outer circumference of the container to which high-frequency power is applied, a power supply path connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the power supply path, A shield is provided on the outer circumference of the electrode to shield electromagnetic waves emitted from the electrode, The shield has an opening through which the power supply path is inserted, A plurality of shielding portions are provided so as to overlap each other around the opening and around the location of the supply portion opposite to the opening, The plasma generation unit is controlled to move relative to the shield, and A substrate processing apparatus equipped with the following:

2. The system further includes a moving mechanism for integrally moving the plasma generation unit, The substrate processing apparatus according to claim 1, wherein the control unit is configured to control the operation of the moving mechanism.

3. The substrate processing apparatus according to claim 1, wherein the plurality of shielding portions include an opening shielding portion provided at the end of the opening and configured to extend toward the supply portion along the power supply path.

4. The substrate processing apparatus according to claim 3, wherein the plurality of shielding portions include a plurality of power supply shielding portions provided in a location opposite to the opening of the supply portion and configured to extend toward the shield along the power supply path.

5. The substrate processing apparatus according to claim 4, wherein the plurality of power supply shielding portions include a first power supply shielding portion configured to surround the inner surface of the opening shielding portion.

6. The substrate processing apparatus according to claim 4, wherein the plurality of power supply shielding portions include a second power supply shielding portion configured to surround the outer surface of the opening shielding portion.

7. The substrate processing apparatus according to claim 1, wherein the plurality of shielding parts are arranged with gaps between them.

8. The substrate processing apparatus according to claim 4, wherein each of the multiple power supply shielding units is formed from a part of the housing of the supply unit.

9. The substrate processing apparatus according to claim 1, wherein the control unit is configured to control the plasma generation unit to move horizontally relative to the opening.

10. The substrate processing apparatus according to claim 3, wherein the aperture shielding portion is configured to be fixed in a relative position to the plasma generation portion.

11. The substrate processing apparatus according to claim 1, wherein the shield is configured to be fixed in a relative position to the plasma generation unit.

12. The substrate processing apparatus according to claim 1, wherein the horizontal width of the gap between the shielding portion provided in the supply unit and the shielding portion provided in the opening is configured to be greater than the amount by which the plasma generation unit moves in a direction parallel to the opening surface of the opening.

13. The system further includes a display unit having a screen on which the movement distance of the plasma generation unit can be set, and an operation unit on which the movement distance can be set. The substrate processing apparatus according to claim 2, wherein the control unit is configured to control the movement of the movement mechanism by the movement distance set by the operation unit.

14. The substrate processing apparatus according to claim 13, wherein the operation unit is configured to allow setting the travel distance on the screen displayed by the display unit.

15. The substrate processing apparatus according to claim 1, wherein the power supply circuit is a plate formed of a copper-containing material, and the width of the opening is wider than the width of the plate.

16. The plasma generation unit, which has an electrode provided on the outer circumference of a container for processing a substrate to which high-frequency power is applied, a power supply path connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the power supply path, is moved relative to a shield provided on the outer circumference of the electrode to shield electromagnetic waves emitted from the electrode, thereby adjusting the plasma generation unit so that electromagnetic waves emitted from the electrode are shielded by a plurality of shielding parts provided in the shield, which are arranged to overlap each other, at an opening through which the power supply path is inserted, around the opening, and around a location of the supply unit facing the opening. Electromagnetic shielding adjustment method.

17. A plasma generation unit having an electrode provided on the outer circumference of a container for processing a substrate to which high-frequency power is applied, a power supply path connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the power supply path, is adjusted so as to be shielded from electromagnetic waves emitted from the electrode by a plurality of shielding parts provided in the shield, which are arranged to overlap each other, at an opening through which the power supply path is inserted, around the opening, and around a location of the supply unit facing the opening. The process of processing the substrate, A method for manufacturing a semiconductor device having [a certain feature].

18. A procedure for adjusting a plasma generation unit, which has an electrode provided on the outer circumference of a container for processing a substrate to which high-frequency power is applied, a power supply path connected to the electrode, and a supply unit that supplies the high-frequency power to the electrode via the power supply path, by moving the plasma generation unit relative to a shield provided on the outer circumference of the electrode to shield electromagnetic waves emitted from the electrode, so that the electromagnetic waves emitted from the electrode are shielded by a plurality of shielding parts provided in the shield, which are arranged to overlap each other, at an opening through which the power supply path is inserted, around the opening, and around a location of the supply unit facing the opening; The procedure for processing the aforementioned substrate, A program that a computer uses to instruct a circuit board processing unit to execute.

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