Semiconductor equipment

Abstract

This invention suppresses pump-out and degradation of the heat dissipation adhesive layer of power semiconductor modules, thereby providing highly reliable semiconductor devices. [Solution] A semiconductor device comprising: a semiconductor module in which a laminated substrate 2 on which semiconductor elements 1 are mounted is sealed with a sealing material 8; a heat sink 3 bonded to the laminated substrate; a heat dissipation adhesive layer 4 containing a rubber elastic body and a filler, provided in contact with the heat sink; a cooler 6 provided in contact with the heat dissipation adhesive layer; and a protective layer 5 covering at least a portion of the surface of the heat dissipation adhesive layer, wherein the protective layer contains a silicone compound and a filler and has a tensile strength of 0.2 to 4.5 MPa.

Claims

1. A semiconductor module is formed by sealing a multilayer substrate on which semiconductor elements are mounted with an encapsulating material, A heat sink bonded to the aforementioned laminated substrate, A heat dissipation adhesive layer comprising a rubber elastic material and a filler is provided in contact with the heat sink plate, A cooler provided in contact with the heat dissipation adhesive layer, A protective layer covering at least a portion of the surface of the heat dissipation adhesive layer and Equipped with, A semiconductor device wherein the protective layer comprises a silicone compound and a filler and has a tensile strength of 0.2 to 4.5 MPa.

2. The semiconductor device according to claim 1, wherein the ratio of the tensile strength of the protective layer to the tensile strength of the heat dissipation adhesive layer is 1.25 to 26.

3. The semiconductor device according to claim 1, wherein the tensile strength of the protective layer is 0.2 to 3 MPa.

4. The protective layer contains the silicone compound, which includes polysiloxane, and the filler is Al ２ O ３ A semiconductor device according to claim 1, comprising (alumina) or BN (boron nitride).

5. The semiconductor device according to claim 1, wherein the filler in the protective layer is contained in an amount of 60% by mass or more and 98% by mass or less with respect to the total mass of the protective layer.

6. The semiconductor device according to claim 1, wherein the protective layer is provided discontinuously along the periphery of the heat dissipation adhesive layer.

7. The semiconductor device according to claim 1, wherein the width of the protective layer is 0.5 mm or more.

8. A method for manufacturing a semiconductor device according to claim 1, The steps include: preparing the semiconductor module in which the heat sink is bonded to the back surface of the laminated substrate; The steps include forming the heat dissipation adhesive layer in contact with the heat sink, The step of forming the protective layer, wherein the protective layer is formed such that it protrudes from the main surface of the heat dissipation adhesive layer, The process involves pressing the cooler onto the protruding protective layer and bringing the cooler into contact with the heat dissipation adhesive layer. Methods that include...

9. The method according to claim 8, wherein the step of forming the protective layer is performed before the step of forming the heat dissipation adhesive layer.

10. The method according to claim 8, wherein the step of forming the heat dissipation adhesive layer is performed before the step of forming the protective layer.

11. The method according to claim 8, wherein the crimping step is performed with a force of 200 to 300 N.

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