Thin film deposition apparatus and thin film deposition method

Abstract

The present invention provides a film deposition apparatus and a film deposition method capable of improving reaction efficiency. [Solution] The system includes a gas exhaust path 220 connected to the chamber 100 and exhausting the raw material gas 200A or reaction gas 300A from the chamber 100 via a first valve 710; a gas concentration enhancement mechanism 500 that separates and exhausts the inert gas 400A contained in the raw material gas 200A or the reaction by-product gas 300B contained in the reaction gas 300A when the raw material gas 200A or reaction gas 300A is supplied to the chamber 100; and a suction pump 600 connected to the gas exhaust path 220 and the gas concentration enhancement mechanism 500 to perform a suction operation.

Description

Technical Field

[0001] The present invention relates to a film forming apparatus and a film forming method.

Background Art

[0002] In Patent Document 1, a film forming method using an atomic layer deposition method (ALD: Atomic Layer Deposition) is disclosed, in which a raw material gas and a reaction gas are supplied into a chamber in which a substrate is installed, and an atomic layer film is formed on the substrate by reacting the raw material gas and the reaction gas. The raw material gas contains, for example, N2 (nitrogen) which is a carrier gas. When the raw material gas and the reaction gas react, for example, H2O (water) which is a reaction by-product is generated.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the method described in Patent Document 1, there is a problem that the concentration of the raw material gas and the reaction gas decreases due to the carrier gas and the reaction by-product, and the reaction efficiency in film formation decreases.

Means for Solving the Problems

[0005] The film deposition apparatus comprises a chamber for housing a member to be film-deposited; a raw material gas storage section for storing raw material gas for film deposition on the member to be film-deposited; a reaction gas storage section for storing reaction gas for reacting with the raw material gas; an inert gas storage section for supplying the raw material gas or the reaction gas into the chamber by introducing an inert gas into at least one of the raw material gas storage section and the reaction gas storage section; a gas exhaust path connected to the chamber and exhausting the raw material gas or the reaction gas from the chamber via a first valve; a gas concentration enhancement mechanism that separates and exhausts the inert gas contained in the raw material gas or separates and exhausts the reaction by-product gas contained in the reaction gas when the raw material gas or the reaction gas is supplied into the chamber; and a suction pump connected to the gas exhaust path and the gas concentration enhancement mechanism to perform a suction operation.

[0006] The film formation method comprises a containment step of containing a member to be film-formed in a chamber; a raw material gas supply step of supplying a raw material gas into the chamber; a raw material gas exhaust step of discharging the raw material gas from the chamber via a gas exhaust path; a reaction gas supply step of supplying a reaction gas into the chamber; a reaction gas exhaust step of discharging the reaction gas from the chamber via the gas exhaust path; and a gas concentration enhancement step of separating and exhausting the inert gas contained in the raw material gas in the chamber, or separating and exhausting the reaction by-product gas contained in the reaction gas in the chamber, when the raw material gas is supplied to the chamber or when the reaction gas is supplied to the chamber. [Brief explanation of the drawing]

[0007] [Figure 1] A schematic diagram showing the configuration of the film deposition apparatus. [Figure 2] A cross-sectional view showing the structure of particles with an insulating film. [Figure 3] A schematic diagram showing the configuration of the mechanism for increasing the concentration of the raw material gas. [Figure 4]A schematic diagram showing the conditions inside the chamber. [Figure 5] A schematic diagram showing the conditions inside the chamber. [Figure 6] A schematic diagram showing the configuration of the mechanism for increasing the concentration of reaction gases. [Figure 7] A schematic diagram showing the conditions inside the chamber. [Figure 8] A schematic diagram showing the conditions inside the chamber. [Figure 9] A flowchart illustrating the film deposition method. [Figure 10] A schematic diagram showing the film deposition method. [Figure 11] A schematic diagram showing the film deposition method. [Figure 12] A schematic diagram showing the film deposition method. [Figure 13] A schematic diagram showing the film deposition method. [Modes for carrying out the invention]

[0008] The configuration of the film deposition apparatus 1000 and the film deposition method will be explained below with reference to the drawings. First, the configuration of the film deposition apparatus 1000 will be explained with reference to Figure 1.

[0009] As shown in Figure 1, the film deposition apparatus 1000 is an apparatus that deposits an insulating film 32 on the surface of metal particles 31, which are to be treated, by atomic layer deposition (ALD), for example, to form insulating film-coated particles 33 (see Figure 2).

[0010] The film deposition apparatus 1000 includes a chamber 100, a raw material gas storage section 200, a reaction gas storage section 300, an inert gas storage section 400, a plurality of valves 710 to 770, a raw material gas supply path 210, a gas exhaust path 220, a suction pump 600, a raw material gas concentration enhancement mechanism 510, a reaction gas concentration enhancement mechanism 520, an inert gas exhaust path 221, and a reaction by-product gas exhaust path 222.

[0011] The chamber 100 has rigidity and airtightness, and for example, has a volume of 10 L to 100 L. The chamber 100 has an opening / closing part (not shown), and a tray (not shown) holding the metal particles 31 is carried in and out of the chamber 100 through the opening / closing part. The chamber 100 forms an insulating film 32 on the surface of the metal particles 31 in a state where the metal particles 31 are accommodated inside.

[0012] The inside of the chamber 100 is evacuated to maintain a reduced pressure state. Examples of the constituent material of the chamber 100 include glass materials such as quartz glass, ceramic materials such as alumina, and metal materials such as stainless steel, aluminum, and titanium.

[0013] The chamber 100 is connected to a raw material gas storage part 200 and a reaction gas storage part 300. The raw material gas storage part 200 stores a raw material gas 200A for forming a film on the metal particles 31. A raw material gas supply path 210 is connected between the raw material gas storage part 200 and the chamber 100.

[0014] A fourth valve 740 is provided in the raw material gas supply path 210. The fourth valve 740 controls the supply from the raw material gas storage part 200 to the chamber 100. When the raw material gas 200A is supplied into the chamber 100 via the raw material gas supply path 210, the fourth valve 740 is in an open state. When the raw material gas 200A in the chamber 100 is exhausted via the gas exhaust path 220, the fourth valve 740 is in a closed state.

[0015] Examples of the raw material gas 200A include a gas containing a precursor of the insulating film 32. Specifically, for example, when forming a silicon-based insulating film 32, examples of the raw material gas 200A include secondary amines such as dimethylamine, methylethylamine, and diethylamine, and reactants of secondary amines and trihalosilanes such as tris(dimethylamino)silane, bis(diethylamino)silane, and bis(tert-butylamino)silane.

[0016] The reaction gas storage unit 300 stores a reaction gas 300A for reacting with the raw material gas 200A. A reaction gas supply path 310 is connected between the reaction gas storage unit 300 and the chamber 100.

[0017] The reaction gas supply path 310 is provided with a fifth valve 750. By opening and closing the fifth valve 750, the reaction gas 300A necessary for forming the insulating film 32 can be supplied into the chamber 100, and the partial pressure of the reaction gas 300A in the chamber 100 can be adjusted.

[0018] The reaction gas 300A is, for example, an oxidizing agent such as oxygen gas. Examples of the oxidizing agent include ozone, plasma oxygen, water vapor, etc. By using ozone as the oxidizing agent, a more dense and uniform-thickness insulating film 32 can be formed more efficiently.

[0019] The inert gas storage unit 400 stores an inert gas 400A such as nitrogen gas or argon gas. By supplying the inert gas 400A to the raw material gas storage unit 200, the raw material gas 200A can be supplied into the chamber 100. Also, by supplying the inert gas 400A to the reaction gas storage unit 300, the reaction gas 300A can be supplied into the chamber 100.

[0020] The raw material gas storage unit 200 is connected to the inert gas storage unit 400 via a pipe 411. The pipe 411 is provided with a valve 760 and a flow controller 410.

[0021] The reaction gas storage unit 300 is connected to the inert gas storage unit 400 via a pipe 421. The pipe 421 is provided with a valve 770 and a flow controller 420.

[0022] Chamber 100 has a plasma generation unit (not shown) that generates oxygen plasma using oxygen gas. Since the plasma generation unit is located inside Chamber 100 in this way, an insulating film 32 can be formed on the surface of the metal particles 31 by utilizing the chemical reaction between the raw material gas 200A and the reaction gas 300A.

[0023] The suction pump 600 is, for example, a vacuum pump. The suction pump 600 exhausts the raw material gas 200A, reaction gas 300A, inert gas 400A, and reaction by-product gas 300B (see Figure 6) supplied to the chamber 100.

[0024] Between the chamber 100 and the suction pump 600, there is a gas exhaust path 220 for exhausting the raw material gas 200A or the reaction gas 300A, an inert gas exhaust path 221 for exhausting the inert gas 400A contained in the raw material gas 200A via the raw material gas concentration mechanism 510, and a reaction by-product gas exhaust path 222 for exhausting the reaction by-product gas 300B contained in the reaction gas 300A via the reaction gas concentration mechanism 520.

[0025] A first valve 710 is provided in the gas exhaust path 220. By opening and closing the first valve 710, the raw material gas 200A and reaction gas 300A can be supplied into the chamber 100, or the raw material gas 200A and reaction gas 300A can be exhausted from the chamber 100.

[0026] The raw material gas concentration mechanism 510 separates the supplied raw material gas 200A from the inert gas 400A contained in the supplied raw material gas 200A using the first gas separation membrane 510A (see Figure 3). The separated inert gas 400A is exhausted via the inert gas exhaust path 221.

[0027] A second valve 720 is provided in the inert gas exhaust path 221. By opening and closing the second valve 720, the raw material gas 200A can be supplied into the chamber 100, or the raw material gas 200A can be exhausted from the chamber 100.

[0028] The reaction gas concentration enhancement mechanism 520 separates the supplied reaction gas 300A from the reaction byproduct gas 300B generated during the reaction using a second gas separation membrane 520A (see Figure 6). The separated reaction byproduct gas 300B is exhausted via the reaction byproduct gas exhaust path 222.

[0029] A third valve 730 is provided in the reaction by-product gas exhaust path 222. By opening and closing the third valve 730, reaction gas 300A can be supplied into the chamber 100, or reaction gas 300A can be exhausted from the chamber 100.

[0030] As described above, since the raw material gas concentration enhancement mechanism 510 is connected to the chamber 100, it is possible to separate and exhaust the inert gas 400A from the raw material gas 200A, thereby increasing the concentration of the raw material gas 200A in the chamber 100. Therefore, it is possible to suppress the excessive use of raw material gas 200A, and thus reduce costs.

[0031] Furthermore, since the reaction gas concentration enhancement mechanism 520 is connected to the chamber 100, it is possible to separate and exhaust the reaction by-product gas 300B from the reaction gas 300A, thereby increasing the concentration of reaction gas 300A in the chamber 100. Therefore, the reaction efficiency between the raw material gas 200A and the reaction gas 300A can be increased.

[0032] Next, the structure of the insulating film-coated particle 33 will be described with reference to Figure 2.

[0033] As shown in Figure 2, the insulating film-coated particle 33 comprises a metal particle 31 and an insulating film 32 formed on the surface of the metal particle 31.

[0034] Examples of materials that make up the metal particles 31 include soft magnetic metal materials. When metal particles 31 made of soft magnetic metal materials are used in magnetic elements such as inductors, it is necessary to ensure insulation between the metal particles 31.

[0035] By using the film deposition apparatus 1000 described above, an insulating film 32 with a sufficiently thin film thickness and high coverage can be formed. This results in insulating film-coated particles 33 that can enhance the magnetic and insulating properties of magnetic elements. Furthermore, because the insulating film 32 formed by atomic layer deposition is dense, it also contributes to the realization of insulating film-coated particles 33 with high insulating properties.

[0036] Examples of soft magnetic metal materials include pure iron, Fe-Si alloys such as silicon steel, Fe-Ni alloys such as permalloy, Fe-Co alloys such as permendur, Fe-Si-Al alloys such as sendust, Fe-Cr-Si alloys and various other Fe-based alloys, as well as various Ni-based alloys, various Co-based alloys, and various amorphous alloys. Among these, examples of amorphous alloys include Fe-based alloys such as Fe-Si-B, Fe-Si-BC, Fe-Si-B-Cr-C, Fe-Si-Cr, Fe-B, Fe-PC, Fe-Co-Si-B, Fe-Si-B-Nb, and Fe-Zr-B, Ni-based alloys such as Ni-Si-B and Ni-PB, and Co-based alloys such as Co-Si-B.

[0037] The average particle size of the metal particles 31 is, for example, 2 μm or less. However, the average particle size of the metal particles 31 is not limited to 2 μm or less, and may be, for example, between 0.1 μm and 50.0 μm.

[0038] Examples of constituent materials for the insulating film 32 include 3DMAS (tris(dimethylamino)silane), TMA (trimethylaluminum), and TBTMT (tert-butylimidotris(ethylmethylamino)tantalum). However, the materials are not limited to these, and oxides such as silicon dioxide, hafnium oxide, tantalum oxide, titanium dioxide, and chromium oxide may also be used.

[0039] Next, the configuration of the raw material gas concentration mechanism 510 will be explained with reference to Figures 3 to 5.

[0040] As shown in Figure 3, the raw material gas concentration mechanism 510 includes a gas exhaust path 220, an inert gas exhaust path 221, and a first gas separation membrane 510A positioned between the gas exhaust path 220 and the inert gas exhaust path 221.

[0041] The gas exhaust path 220 contains a mixture of the raw material gas 200A and the inert gas 400A supplied together with the raw material gas 200A. In other words, the gas exhaust path 220 is a space that is connected to the chamber 100.

[0042] Specifically, as shown in Figure 4, metal particles 31, in which oxygen (O) atoms and hydrogen (H) atoms are bonded together, are arranged inside the chamber 100. When the raw material gas 200A is supplied into the chamber 100, the raw material gas 200A and the inert gas 400A become mixed together.

[0043] As shown in Figure 3, the first gas separation membrane 510A has a separation layer 510A1 and a support 510A2. Examples of the separation layer 510A1 include a polyimide membrane and a sub-nanoceramic membrane. Examples of the support 510A2 include a porous material such as an alumina membrane.

[0044] After being drawn in by the suction pump 600, the inert gas 400A that has passed through the first gas separation membrane 510A is exhausted into the inert gas exhaust path 221. Only a very small amount of the raw material gas 200A is present in the inert gas exhaust path 221.

[0045] Specifically, as shown in Figure 5, the raw material gas 200A supplied into the chamber 100 has been depleted of the inert gas 400A, resulting in a high concentration of raw material gas 200A.

[0046] In this way, by passing the raw material gas 200A through the raw material gas concentration mechanism 510, it becomes possible to remove the inert gas 400A that is not necessary for film formation, and a high concentration of raw material gas 200A can be retained in the chamber 100.

[0047] Furthermore, since the first gas separation membrane 510A has a membrane made of the above material, it is possible to selectively separate and exhaust the inert gas 400A from the raw material gas 200A.

[0048] Next, the configuration of the reaction gas concentration mechanism 520 will be explained with reference to Figures 6 to 8.

[0049] As shown in Figure 6, the reaction gas concentration mechanism 520 includes a gas exhaust path 220, a reaction byproduct gas exhaust path 222, and a second gas separation membrane 520A positioned between the gas exhaust path 220 and the reaction byproduct gas exhaust path 222.

[0050] The gas exhaust path 220 contains a mixture of reaction gas 300A, inert gas 400A (not shown) supplied together with reaction gas 300A, and reaction by-product gas 300B generated by the reaction of raw material gas 200A and reaction gas 300A. As described above, the gas exhaust path 220 is a space whose interior is connected to the chamber 100.

[0051] Specifically, as shown in Figure 7, oxygen (O) atoms and metal particles 31, which are formed by the bonding of oxygen atoms with the raw material gas 200A, are arranged inside the chamber 100. When reaction gas 300A is supplied into the chamber 100, the raw material gas 200A, inert gas 400A, and reaction by-product gases 300B, such as water (H2O), which are produced by the reaction of the raw material gas 200A and the reaction gas 300A, are mixed together.

[0052] As shown in Figure 6, the second gas separation membrane 520A has a separation layer 520A1 and a support 520A2. Examples of the separation layer 520A1 include polymer membranes and zeolite membranes. Examples of the support 520A2 include porous materials such as alumina membranes.

[0053] After being drawn in by the suction pump 600, the reaction by-product gas 300B that has passed through the second gas separation membrane 520A is exhausted into the exhaust path 222. Specifically, as shown in Figure 8, the reaction gas 300A supplied into the chamber 100 has been depleted of reaction by-product gas 300B and other substances, resulting in a high concentration of reaction gas 300A.

[0054] In this way, by passing the reaction gas 300A through the reaction gas concentration mechanism 520, it becomes possible to remove the reaction by-product gas 300B that is not necessary for the reaction, and a high concentration of reaction gas 300A can be retained in the chamber 100.

[0055] Furthermore, since the second gas separation membrane 520A has a membrane made of the above material, the reaction by-product gas 300B can be selectively separated from the reaction gas 300A and exhausted.

[0056] Next, a method for forming an insulating film 32 on the surface of metal particles 31 will be described with reference to Figures 9 to 13. The atomic layer deposition method described above is used to form the insulating film 32.

[0057] As shown in Figure 9, in step S11 (containment step), the metal particles 31 are contained in the chamber 100. Specifically, for example, an opening / closing part (not shown) of the chamber 100 is opened, and a tray on which the metal particles 31 are arranged is placed inside.

[0058] Next, in step S12 (raw material gas supply process), raw material gas 200A is supplied into the chamber 100. Specifically, first, valve 760 and the fourth valve 740 are opened. Then, the flow rate of inert gas 400A is controlled by the flow controller 410, and while the inert gas 400A is supplied to the raw material gas storage unit 200, raw material gas 200A is supplied into the chamber 100. At this time, inert gas 400A is supplied into the chamber 100 together with the raw material gas 200A.

[0059] The flow rate of inert gas 400A is, for example, 10 sccm to 100 sccm. The pressure in chamber 100 is, for example, 100 Pa to 10000 Pa. The concentration of raw material gas 200A in chamber 100 is, for example, 10% to 60%. The temperature in chamber 100 is, for example, 150°C to 300°C. The pump exhaust speed is, for example, 2000 L / min to 20000 L / min.

[0060] Next, in step S13 (gas concentration enhancement process, inert gas exhaust process), the inert gas 400A is exhausted. Specifically, as shown in Figure 10, the inert gas 400A contained in the raw material gas 200A in the chamber 100 is separated and exhausted. The method for enhancing the concentration of the raw material gas 200A is, as described above, to exhaust the inert gas 400A from the inert gas exhaust path 221 via the raw material gas concentration enhancement mechanism 510.

[0061] At this time, the second valve 720 is open. The first valve 710, the third valve 730, and the fourth valve 740 are closed. The pressure inside the chamber 100 is, for example, 100 Pa to 10000 Pa. The concentration of the raw material gas 200A inside the chamber 100 is, for example, 20% to 80%.

[0062] In this way, the inert gas 400A is separated from the raw material gas 200A supplied to the chamber 100 and exhausted, thereby increasing the concentration of the raw material gas 200A in the chamber 100. Therefore, it is possible to suppress the excessive use of raw material gas 200A in order to increase its concentration, and thus reduce costs.

[0063] Furthermore, in the process of separating and exhausting the inert gas 400A from the raw material gas 200A, i.e., the inert gas exhaust process, it is preferable to stop the supply of the raw material gas 200A, i.e., to stop the raw material gas supply process. This method makes it possible to further increase the concentration of the raw material gas 200A in the chamber 100.

[0064] The introduced raw material gas 200A is adsorbed onto the surface of the metal particles 31. At this time, once the raw material gas 200A is adsorbed onto the surface of the metal particles 31, it is difficult for it to adsorb in any further layers. Therefore, it is possible to control the thickness of the final insulating film 32 with high precision. In addition, since the raw material gas 200A also wraps around and adsorbs into the shadows and gaps of the metal particles 31, the thickness of the insulating film 32 is made more uniform. Furthermore, since the concentration of the raw material gas 200A is increased to a high concentration, the adsorption probability of the raw material gas 200A adsorbing onto the surface of the metal particles 31 can be improved.

[0065] Furthermore, the inert gas exhaust process is not limited to being carried out separately from the raw material gas supply process; it may overlap in part or be carried out simultaneously.

[0066] Next, in step S14 (raw material gas exhaust process), the raw material gas 200A is exhausted. Specifically, as shown in Figure 11, the raw material gas 200A used for film formation is exhausted from the chamber 100 via the gas exhaust path 220 using a suction pump 600.

[0067] The first valve 710 in the gas exhaust path 220 is in the open position. Valves 760, 4th valve 740, and the other valves are in the closed position. The pressure inside chamber 100 is, for example, 10 Pa or less. The temperature inside chamber 100 is, for example, 150°C to 300°C. The pump exhaust speed is, for example, 2000 L / min to 20000 L / min.

[0068] Next, in step S15 (reaction gas supply step), reaction gas 300A is supplied into the chamber 100. Specifically, first, valve 770 and the fifth valve 750 are opened. Then, the flow rate of inert gas 400A is controlled by the flow controller 420, and while the inert gas 400A is supplied to the reaction gas storage unit 300, reaction gas 300A is supplied into the chamber 100. At this time, inert gas 400A is supplied into the chamber 100 together with the reaction gas 300A.

[0069] As mentioned above, the reaction gas 300A can be an oxidizing agent such as ozone, plasma oxygen, or water vapor. The reaction gas 300A reacts with the raw material gas 200A adsorbed on the surface of the metal particles 31 to form an insulating film 32.

[0070] The flow rate of inert gas 400A is, for example, 10 sccm to 5000 sccm. The pressure in chamber 100 is, for example, 100 Pa to 10000 Pa. The concentration of reaction gas 300A in chamber 100 is, for example, 5% to 30%. The temperature in chamber 100 is, for example, 150°C to 300°C. The pump exhaust speed is, for example, 2000 L / min to 20000 L / min.

[0071] Next, in step S16 (gas concentration increase step, reaction byproduct gas exhaust step), the reaction byproduct gas 300B is exhausted. Specifically, as shown in Figure 12, the inert gas 400A contained in the reaction gas 300A in the chamber 100 and the reaction byproduct gas 300B generated when the raw material gas 200A and the reaction gas 300A react are separated and exhausted. The method for increasing the concentration of the reaction gas 300A is, as described above, to exhaust the reaction byproduct gas 300B from the reaction byproduct gas exhaust path 222 via the reaction gas concentration increase mechanism 520.

[0072] At this time, the third valve 730 is open. The first valve 710, the second valve 720, and the fifth valve 750 are closed. The pressure inside the chamber 100 is, for example, 100 Pa to 10000 Pa. The concentration of the reaction gas 300A inside the chamber 100 is, for example, 10% to 80%.

[0073] In this way, the inert gas 400A and reaction by-product gas 300B are separated from the raw material gas 200A supplied to the chamber 100 and exhausted, thereby increasing the concentration of reaction gas 300A in the chamber 100. Therefore, it is possible to increase the reaction efficiency between the raw material gas 200A and the reaction gas 300A, and to suppress the excessive use of reaction gas 300A.

[0074] Furthermore, in the step of separating and exhausting the reaction by-product gas 300B from the reaction gas 300A, i.e., the reaction by-product gas exhaust step, it is preferable to stop the supply of reaction gas 300A, i.e., stop the reaction gas supply step. This method makes it possible to further increase the concentration of reaction gas 300A in the chamber 100.

[0075] Furthermore, the reaction by-product gas exhaust process is not limited to being carried out separately from the reaction gas supply process; it may overlap in part or be carried out simultaneously.

[0076] Next, in step S17 (reaction gas exhaust step), the reaction gas 300A is exhausted. Specifically, as shown in Figure 13, the reaction gas 300A used for film formation is exhausted from the chamber 100 via the gas exhaust path 220 using a suction pump 600.

[0077] The first valve 710 in the gas exhaust path 220 is in the open position. Valves 770, the fifth valve 750, and the other valves are in the closed position. The pressure inside the chamber 100 is, for example, 10 Pa or less. The temperature inside the chamber 100 is, for example, 150°C to 300°C. The pump exhaust speed is, for example, 2000 L / min to 20000 L / min.

[0078] Furthermore, depending on the required thickness of the insulating film 32, the supply and exhaust of the raw material gas 200A and the supply and exhaust of the reaction gas 300A can be repeated. The thickness of the insulating film 32 can be increased according to the number of repetitions. This makes it easy to obtain the desired thickness.

[0079] Subsequently, the insulating film-coated particles 33 may be subjected to post-treatment as needed. Examples of post-treatment include static elimination treatment and radical treatment. Of these, static elimination treatment is a treatment that reduces the amount of charge due to the charging of the insulating film-coated particles 33. For example, an ionizer can be used for static elimination treatment.

[0080] Examples of constituent materials for the formed insulating film 32 include oxides such as silicon oxide, hafnium oxide, tantalum oxide, titanium oxide, and chromium oxide, and nitrides such as aluminum nitride, titanium nitride, and tantalum nitride. The thickness of the insulating film 32 is not particularly limited, but as an example, it is between 1 nm and 500 nm.

[0081] As described above, the film deposition apparatus 1000 of this embodiment includes a chamber 100 for containing metal particles 31, a raw material gas storage section 200 for storing raw material gas 200A for forming a film on the metal particles 31, a reaction gas storage section 300 for storing reaction gas 300A for reacting with the raw material gas 200A, an inert gas storage section 400 for introducing inert gas 400A into at least one of the raw material gas storage section 200 and the reaction gas storage section 300 to supply the raw material gas 200A or reaction gas 300A into the chamber 100, and a first valve 710 connected to the chamber 100. The system includes a gas exhaust path 220 for exhausting the raw material gas 200A or reaction gas 300A from the chamber 100, a gas concentration enhancement mechanism 500 that separates and exhausts the inert gas 400A contained in the raw material gas 200A or the reaction by-product gas 300B contained in the reaction gas 300A when the raw material gas 200A or reaction gas 300A is supplied to the chamber 100, and a suction pump 600 connected to the gas exhaust path 220 and the gas concentration enhancement mechanism 500 to perform a suction operation.

[0082] With this configuration, the gas concentration enhancement mechanism 500 separates and exhausts the inert gas 400A from the raw material gas 200A, and separates and exhausts the reaction by-product gas 300B from the reaction gas 300A. This makes it possible to increase the concentration of both the raw material gas 200A and the reaction gas 300A, thereby improving the reaction efficiency in film formation. This also makes it possible to suppress the excessive use of raw material gas 200A and reaction gas 300A, and thus reduce associated costs.

[0083] Furthermore, in the film deposition apparatus 1000 of this embodiment, it is preferable that the gas concentration enhancement mechanism 500 includes an inert gas exhaust path 221 connected to the chamber 100, which exhausts the inert gas 400A from the chamber 100 via a second valve 720 and a first gas separation membrane 510A when a raw material gas 200A is supplied into the chamber 100, and a reaction by-product gas exhaust path 222 connected to the chamber 100, which exhausts the reaction by-product gas 300B from the chamber 100 via a third valve 730 and a second gas separation membrane 520A when a reaction gas 300A is supplied into the chamber 100. With this configuration, since the gas concentration enhancement mechanism 500 has an inert gas exhaust path 221 and a reaction by-product gas exhaust path 222, the inert gas 400A can be selectively separated and exhausted by the first gas separation membrane 510A and the reaction by-product gas 300B by the second gas separation membrane 520A.

[0084] Furthermore, in the film deposition apparatus 1000 of this embodiment, it is preferable that the first valve 710 and the third valve 730 are closed when the inert gas 400A is exhausted through the inert gas exhaust path 221. With this configuration, the first valve 710 and the third valve 730 are closed, that is, the second valve 720 is open, so that the inert gas 400A can be exhausted through the first gas separation membrane 510A.

[0085] Furthermore, in the film deposition apparatus 1000 of this embodiment, when the reaction byproduct gas 300B is exhausted through the reaction byproduct gas exhaust path 222, it is preferable that the first valve 710 and the second valve 720 are in a closed state. With this configuration, since the first valve 710 and the second valve 720 are in a closed state, that is, the third valve 730 is in an open state, the reaction byproduct gas 300B can be exhausted through the second gas separation membrane 520A.

[0086] Furthermore, in the film deposition apparatus 1000 of this embodiment, a fourth valve 740 is preferably positioned between the raw material gas storage unit 200 and the chamber 100. The fourth valve 740 is preferably in an open state when raw material gas 200A is supplied into the chamber 100, and in a closed state when inert gas 400A is exhausted from the chamber 100 via the inert gas exhaust path 221. With this configuration, by operating the fourth valve 740 to an open or closed state, raw material gas 200A can be supplied into the chamber 100, or inert gas 400A can be exhausted from the chamber 100.

[0087] Furthermore, in the film deposition apparatus 1000 of this embodiment, a fifth valve 750 is preferably positioned between the reaction gas storage unit 300 and the chamber 100. The fifth valve 750 is preferably in an open state when reaction gas 300A is supplied into the chamber 100, and in a closed state when reaction byproduct gas 300B is exhausted from the chamber 100 via the reaction byproduct gas exhaust path 222. With this configuration, by operating the fifth valve 750 to an open or closed state, reaction gas 300A can be supplied into the chamber 100, or reaction byproduct gas 300B can be exhausted from the chamber 100.

[0088] Furthermore, in the film deposition apparatus 1000 of this embodiment, the first gas separation membrane 510A preferably includes a polyimide membrane or a sub-nanoceramic membrane. With this configuration, since the first gas separation membrane 510A includes the above membrane, the inert gas 400A can be selectively separated from the raw material gas 200A.

[0089] Furthermore, in the film deposition apparatus 1000 of this embodiment, the second gas separation membrane 520A preferably includes a polymer membrane or a zeolite membrane. With this configuration, since the second gas separation membrane 520A includes the above membrane, the reaction by-product gas 300B can be selectively separated from the reaction gas 300A.

[0090] Furthermore, the film formation method of this embodiment includes a containment step of containing metal particles 31 in a chamber 100, a raw material gas supply step of supplying raw material gas 200A into the chamber 100, a raw material gas exhaust step of exhausting the raw material gas 200A in the chamber 100 via a gas exhaust path 220, a reaction gas supply step of supplying reaction gas 300A into the chamber 100, a reaction gas exhaust step of exhausting the reaction gas 300A in the chamber 100 via a gas exhaust path 220, and a gas concentration enhancement step of separating and exhausting the inert gas 400A contained in the raw material gas 200A in the chamber 100, or separating and exhausting the reaction by-product gas 300B contained in the reaction gas 300A in the chamber 100, when raw material gas 200A is supplied to the chamber 100 or when reaction gas 300A is supplied to the chamber 100.

[0091] This method allows for the separation and exhaust of inert gas 400A from raw material gas 200A and reaction by-product gas 300B from reaction gas 300A through a gas concentration enhancement process. This increases the concentration of both raw material gas 200A and reaction gas 300A, thereby improving the reaction efficiency in film formation. This also reduces the excessive use of raw material gas 200A and reaction gas 300A, thereby lowering associated costs.

[0092] Furthermore, in the film formation method of this embodiment, it is preferable that the gas concentration increase step includes an inert gas exhaust step between the raw material gas supply step and the raw material gas exhaust step, which separates and exhausts the inert gas 400A contained in the chamber 100, and a reaction by-product gas exhaust step between the reaction gas supply step and the reaction gas exhaust step, which separates and exhausts the reaction by-product gas 300B contained in the chamber 100. With this method, since it includes an inert gas exhaust step and a reaction by-product gas exhaust step, the inert gas 400A and the reaction by-product gas 300B can be selectively exhausted.

[0093] Furthermore, in the film formation method of this embodiment, it is preferable to stop the raw material gas supply process during the inert gas exhaust process. With this method, when the inert gas 400A is exhausted, the supply of the raw material gas 200A is stopped, so the inert gas 400A contained in the chamber 100 can be exhausted efficiently.

[0094] Furthermore, in the film formation method of this embodiment, it is preferable to stop the reaction gas supply process during the reaction byproduct gas exhaust process. With this method, when exhausting the reaction byproduct gas 300B, the supply of reaction gas 300A is stopped, so the reaction byproduct gas 300B contained in the chamber 100 can be efficiently exhausted.

[0095] The following describes some variations of the embodiments described above.

[0096] As described above, the gas exhaust path 220 is not limited to being used in common for exhausting the raw material gas 200A and the reaction gas 300A, but may also be provided with separate exhaust paths for each.

[0097] Thus, in the modified film deposition apparatus 1000, it is preferable that the gas exhaust path 220 is separated into a path for exhausting the raw material gas 200A and a path for exhausting the reaction gas 300A. With this configuration, since the raw material gas 200A and the reaction gas 300A are exhausted separately from the chamber 100, the raw material gas 200A and the reaction gas 300A can be selectively exhausted without mixing.

[0098] As described above, the system is not limited to providing a first valve 710, a second valve 720, and a third valve 730, but may also be configured with a switchable, integrated valve, such as a three-way valve. Specifically, the three-way valve can be switched between exhausting raw material gas 200A or reaction gas 300A from the chamber 100 via the gas exhaust path 220, exhausting inert gas 400A via the inert gas exhaust path 221, and exhausting reaction by-product gas 300B via the reaction by-product gas exhaust path 222.

[0099] Thus, in the modified film deposition apparatus 1000, it is preferable that the first valve 710, the second valve 720, and the third valve 730 are integrated valves that can be switched depending on whether the raw material gas 200A or reaction gas 300A is being exhausted through the gas exhaust path 220, the inert gas 400A is being exhausted through the inert gas exhaust path 221, or the reaction by-product gas 300B is being exhausted through the reaction by-product gas exhaust path 222. With this configuration, since an integrated valve that can be switched, in other words, a valve like a three-way valve is used, the exhaust path can be changed by controlling a single valve.

[0100] As described above, the method is not limited to depositing an insulating film 32 on powdered metal particles 31; for example, the film may be deposited on a wafer instead of powder. Furthermore, the method is not limited to depositing an insulating film 32; a metal film, specifically aluminum, hafnium, tantalum, etc., may be deposited instead. [Explanation of symbols]

[0101] 31…Metal particles, 32…Insulating film, 33…Insulating film-coated particles, 100…Chamber, 200…Raw material gas storage section, 200A…Raw material gas, 210…Raw material gas supply path, 220…Gas exhaust path, 221…Inert gas exhaust path, 222…Reaction by-product gas exhaust path, 300…Reaction gas storage section, 300A…Reaction gas, 300B…Reaction by-product gas, 310…Reaction gas supply path, 400…Inert gas storage section, 400A…Inert gas, 410…Flow controller, 411…Piping, 420… Flow controller, 421... Piping, 500... Gas concentration enhancement mechanism, 510... Raw material gas concentration enhancement mechanism, 510A... First gas separation membrane, 510A1... Separation layer, 510A2... Support, 520... Reaction gas concentration enhancement mechanism, 520A2... Support, 520A1... Separation layer, 520A... Second gas separation membrane, 600... Suction pump, 710... First valve, 720... Second valve, 730... Third valve, 740... Fourth valve, 750... Fifth valve, 760... Valve, 770... Valve, 1000... Film deposition apparatus.

Claims

1. A chamber for housing the material to be treated with film deposition, A raw material gas storage unit for storing raw material gas for forming a film on the member to be treated, A reaction gas storage section for storing a reaction gas to be reacted with the aforementioned raw material gas, An inert gas storage unit is provided, which introduces an inert gas into at least one of the raw material gas storage unit and the reaction gas storage unit, and supplies the raw material gas or the reaction gas into the chamber. A gas exhaust path is connected to the chamber and, via a first valve, exhausts the raw material gas or the reaction gas from the chamber. A gas concentration enhancement mechanism that, when the raw material gas is supplied into the chamber, or when the reaction gas is supplied into the chamber, separates and exhausts the inert gas contained in the raw material gas, or separates and exhausts the reaction by-product gas contained in the reaction gas, A suction pump connected to the aforementioned gas exhaust path and the aforementioned gas concentration mechanism to perform a suction operation, A film deposition apparatus equipped with the following features.

2. A film deposition apparatus according to claim 1, The aforementioned gas concentration increase mechanism is, An inert gas exhaust path is connected to the chamber, and when the raw material gas is supplied into the chamber, the inert gas in the chamber is exhausted via a second valve and a first gas separation membrane. A reaction by-product gas exhaust path is connected to the chamber and, when the reaction gas is supplied into the chamber, exhausts the reaction by-product gas from the chamber via a third valve and a second gas separation membrane, A film deposition apparatus equipped with the following features.

3. A film deposition apparatus according to claim 2, A film deposition apparatus in which the first valve and the third valve are closed when the inert gas is exhausted through the inert gas exhaust path.

4. A film deposition apparatus according to claim 2, A film deposition apparatus in which the first valve and the second valve are closed when the reaction byproduct gas is exhausted through the reaction byproduct gas exhaust path.

5. A film deposition apparatus according to claim 1, A film deposition apparatus in which the gas exhaust path is separated into a path for exhausting the raw material gas and a path for exhausting the reaction gas.

6. A film deposition apparatus according to claim 2, A fourth valve is positioned between the raw material gas storage section and the chamber. A film deposition apparatus wherein the fourth valve is in an open state when the raw material gas is supplied into the chamber, and in a closed state when the inert gas in the chamber is exhausted through the inert gas exhaust path.

7. A film deposition apparatus according to claim 2, A fifth valve is positioned between the reaction gas storage section and the chamber. A film deposition apparatus wherein the fifth valve is in an open state when the reaction gas is supplied into the chamber, and in a closed state when the reaction byproduct gas is exhausted from the chamber through the reaction byproduct gas exhaust path.

8. A film deposition apparatus according to claim 2, The first valve, the second valve, and the third valve are When exhausting the raw material gas or the reaction gas through the aforementioned gas exhaust path, When the inert gas is exhausted through the aforementioned inert gas exhaust path, When the reaction byproduct gas is exhausted through the reaction byproduct gas exhaust path, A film deposition apparatus with an integrated valve that can be switched according to the conditions.

9. A film deposition apparatus according to claim 2, The first gas separation membrane includes a polyimide membrane or a sub-nanoceramic membrane in the film deposition apparatus.

10. A film deposition apparatus according to claim 2, The film deposition apparatus includes a polymer membrane or a zeolite membrane as the second gas separation membrane.

11. A housing step in which the member to be subjected to film deposition is housed in a chamber, A raw material gas supply process for supplying raw material gas into the chamber, A raw material gas exhaust process is performed to discharge the raw material gas in the chamber via a gas exhaust path, A reaction gas supply step of supplying reaction gas into the chamber, A reaction gas exhaust step in which the reaction gas in the chamber is discharged via the gas exhaust path, A gas concentration enhancement step is performed, in which, when the raw material gas is supplied into the chamber, or when the reaction gas is supplied into the chamber, the inert gas contained in the raw material gas in the chamber is separated and exhausted, or the reaction by-product gas contained in the reaction gas in the chamber is separated and exhausted. A film formation method having the following characteristics.

12. A film formation method according to claim 11, The aforementioned gas concentration increase step is, Between the raw material gas supply process and the raw material gas exhaust process, there is an inert gas exhaust process that separates and exhausts the inert gas contained in the chamber, Between the reaction gas supply step and the reaction gas exhaust step, there is a reaction by-product gas exhaust step that separates and exhausts the reaction by-product gas contained in the chamber, A film formation method having the following characteristics.

13. A film formation method according to claim 12, The inert gas exhaust step is a film formation method which involves stopping the raw material gas supply step.

14. A film formation method according to claim 12, The aforementioned reaction byproduct gas exhaust step is a film formation method in which the reaction gas supply step is stopped.

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