Temperature detection element and semiconductor module

Abstract

In semiconductor modules, it is preferable to suppress discharge in the temperature sensing element. [Solution] A temperature detection element is provided, comprising an anode electrode and a cathode electrode provided above the upper surface of a semiconductor substrate, a main cathode region of a first conductivity type connected to the cathode electrode, a main anode region of a second conductivity type provided in contact with the main cathode region and connected to the anode electrode, and a conductive portion that brings one of the anode electrode and the cathode electrode and the lower surface of the semiconductor substrate to the same potential.

Description

[Technical Field]

[0001] This invention relates to a temperature sensing element and a semiconductor module. [Background technology]

[0002] Patent Document 1 discloses a power module equipped with a "temperature sensor for detecting the temperature of a power semiconductor element (Claim 1)". Patent Document 2 discloses a semiconductor device equipped with a "semiconductor base substrate having at least one pn junction (Claim 1)". Patent Document 1: Japanese Unexamined Patent Publication No. 2019-149439 Patent Document 2: Japanese Unexamined Patent Publication No. 2005-045120 [Overview of the Initiative] [Problems that the invention aims to solve]

[0003] In semiconductor modules, it is preferable to suppress discharge in the temperature sensing element. [Means for solving the problem]

[0004] To solve the above problems, a first embodiment of the present invention provides a temperature detection element formed on a semiconductor substrate having an upper surface and a lower surface. The temperature detection element may include an anode electrode and a cathode electrode provided above the upper surface of the semiconductor substrate. Any of the above temperature detection elements may include a first conductivity type main cathode region connected to the cathode electrode. Any of the above temperature detection elements may include a second conductivity type main anode region provided in contact with the main cathode region and connected to the anode electrode. Any of the above temperature detection elements may include a conductive portion that brings one of the anode electrode and the cathode electrode to the same potential as the lower surface of the semiconductor substrate.

[0005] Any of the above temperature sensing elements may have a semiconductor oxide film on the upper surface of the semiconductor substrate. In any of the above temperature sensing elements, the main cathode region and the main anode region may be formed on the upper surface of the semiconductor oxide film.

[0006] In any of the above temperature sensing elements, the main cathode region and the main anode region may be formed on a polycrystalline semiconductor film.

[0007] In any of the above temperature sensing elements, the conductive portion may electrically connect the cathode electrode to the lower surface of the semiconductor substrate.

[0008] In any of the above temperature sensing elements, the conductive portion may have a conductive region of a first conductivity type provided inside the semiconductor substrate.

[0009] Any of the above temperature sensing elements may include an interlayer insulating film provided between the upper surface of the semiconductor substrate and the cathode electrode. In any of the above temperature sensing elements, the conductive portion may be provided through the interlayer insulating film and have through wiring connecting the cathode electrode and the conductive region.

[0010] In any of the above temperature sensing elements, the conductive region may have a high-concentration region connected to the through-wiring. In any of the above temperature sensing elements, the conductive region may be provided between the high-concentration region and the lower surface of the semiconductor substrate and may have a low-concentration region with a lower concentration than the high-concentration region.

[0011] In any of the above temperature sensing elements, the low-concentration region may also be provided below the main anode region and the main cathode region.

[0012] In any of the above temperature sensing elements, the conductive region is provided between the low-concentration region and the lower surface of the semiconductor substrate, and may include a lower surface region with a higher concentration than the low-concentration region.

[0013] In any of the above temperature detection elements, the resistivity in the low concentration region may be 100 Ωcm or less.

[0014] In any of the above temperature detection elements, the doping concentration in the low concentration region may be 1 × 10 13 / cm 3 or more.

[0015] In any of the above temperature detection elements, the thickness between the upper surface and the lower surface of the semiconductor substrate may be 10 μm or more and 300 μm or less.

[0016] Any of the above temperature detection elements may include a connection wiring connected to the cathode electrode. In any of the above temperature detection elements, the area of the through wiring may be smaller than the area of the contact portion where the cathode electrode and the connection wiring contact each other.

[0017] Any of the above temperature detection elements may include a connection wiring connected to the cathode electrode. In any of the above temperature detection elements, the through wiring may be farther from the main anode region and the main cathode region than the contact portion where the cathode electrode and the connection wiring contact each other.

[0018] Any of the above temperature detection elements may include a connection wiring connected to the cathode electrode. In any of the above temperature detection elements, the through wiring may be closer to the main anode region and the main cathode region than the contact portion where the cathode electrode and the connection wiring contact each other.

[0019] Any of the above temperature detection elements may include a connection wiring connected to the cathode electrode. At least one of the through wirings may be provided outside the intermediate region between the contact portion where the cathode electrode and the connection wiring contact each other and the main anode region and the main cathode region.

[0020] Any of the above temperature sensing elements may include a connecting wire connected to the cathode electrode. The through-wiring may be provided in a region of any of the above temperature sensing elements that does not overlap with the contact portion where the cathode electrode and the connecting wire come into contact.

[0021] Multiple through-wirings may be provided in any of the above-mentioned temperature sensing elements.

[0022] Any of the above temperature sensing elements may include a connecting wire connected to the cathode electrode. In any of the above temperature sensing elements, two through-wirings may be provided so as to sandwich the contact portion where the cathode electrode and the connecting wire come into contact.

[0023] In any of the above temperature sensing elements, the main anode region and the main cathode region may be arranged side by side in a first direction. In any of the above temperature sensing elements, the cathode electrode may have a first portion arranged side by side with the main anode region and the main cathode region in the first direction. In any of the above temperature sensing elements, the cathode electrode may have a second portion extending from the first portion to a position aligned with the main anode region and the main cathode region in a second direction perpendicular to the first direction. In any of the above temperature sensing elements, the through-wiring may be provided in the second portion.

[0024] Any of the above temperature sensing elements may have a sub-cathode region of a first conductivity type and a sub-anode region of a second conductivity type, which are provided in antiparallel to the main anode region and the main cathode region.

[0025] In any of the above temperature sensing elements, the main anode region and the main cathode region may each be arranged alternately one or more times. In any of the above temperature sensing elements, the sub-anode region and the sub-cathode region may each be arranged alternately one or more times. In any of the above temperature sensing elements, the number of times the sub-anode region and the sub-cathode region are arranged alternately may be less than the number of times the main anode region and the main cathode region are arranged alternately.

[0026] In any of the above temperature sensing elements, the conductive portion may be provided outside the semiconductor substrate and electrically connect the cathode electrode to the lower surface of the semiconductor substrate.

[0027] A second embodiment of the present invention provides a semiconductor module comprising a temperature sensing element according to the first embodiment and a circuit board on which the temperature sensing element is mounted. In the semiconductor module, the lower surface of the semiconductor substrate and the circuit board may be arranged facing each other. In any of the semiconductor modules described above, one of the anode electrode and the cathode electrode may be electrically connected to the circuit board via the conductive portion.

[0028] A third aspect of the present invention provides a method for manufacturing a temperature sensing element. The above manufacturing method may include a step of forming a semiconductor oxide film by thermal oxidation of a semiconductor substrate. Any of the above manufacturing methods may include a step of forming an opening in a part of the semiconductor oxide film. Any of the above manufacturing methods may include a step of selectively forming a polycrystalline semiconductor film on the upper surface of the semiconductor substrate. Any of the above manufacturing methods may include a step of selectively forming a cathode region of a first conductivity type and an anode region of a second conductivity type in the polycrystalline semiconductor film, and forming a high-concentration region of the same conductivity type as the semiconductor substrate on the upper surface of the semiconductor substrate exposed to the opening in the semiconductor oxide film. Any of the above manufacturing methods may include a step of forming an interlayer insulating film on the upper surface side of the semiconductor substrate. Any of the above manufacturing methods may include a step of selectively forming a metal electrode on the upper surface side of the semiconductor substrate, forming an anode electrode connected to the anode region and a cathode electrode connected to the cathode region, and forming a conductive portion by connecting the cathode electrode and the high-concentration region. Any of the above manufacturing methods may include a step of connecting the semiconductor substrate to a wiring layer, thereby electrically connecting the conductive portion and the wiring layer.

[0029] The above summary of the invention does not enumerate all the necessary features of the present invention. Furthermore, subcombinations of these features may also constitute an invention. [Brief explanation of the drawing]

[0030] [Figure 1] This is a cross-sectional view showing an example of a semiconductor module 200 according to one embodiment of the present invention. [Figure 2] This is a cross-sectional view showing an example of the configuration of the temperature detection element 100. [Figure 3] This is a cross-sectional view showing another example of the temperature sensing element 100. [Figure 4] This figure shows an example of the structure of the temperature detection element 100 in a top view. [Figure 5] This diagram illustrates an example of the arrangement of through-wiring 14. [Figure 6] This diagram illustrates other arrangement examples for the through-wiring 14. [Figure 7] This diagram illustrates other arrangement examples for the through-wiring 14. [Figure 8] This diagram illustrates other arrangement examples for the through-wiring 14. [Figure 9] This diagram illustrates other arrangement examples for the through-wiring 14. [Figure 10] This diagram illustrates other arrangement examples for the through-wiring 14. [Figure 11] Figure 5 shows an example of a cross-section AA. [Figure 12A] This figure shows another structural example of semiconductor module 200. [Figure 12B] This figure shows another structural example of semiconductor module 200. [Figure 12C] This figure shows another structural example of semiconductor module 200. [Figure 13] This is a perspective view showing an example of the appearance of semiconductor module 200. [Figure 14] This is a perspective view showing an example of a circuit housed in the enclosure 220. [Figure 15] This is a flowchart showing an example of a manufacturing method for the temperature sensing element 100. [Modes for carrying out the invention]

[0031] The present invention will be described below through embodiments, but these embodiments are not intended to limit the scope of the claims. Furthermore, not all combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0032] In this specification, one side of a semiconductor substrate parallel to its depth direction is referred to as "top," and the other side as "bottom." Of the two main surfaces of a substrate, layer, or other component, one surface is referred to as the top surface, and the other surface as the bottom surface. The directions of "top" and "bottom" are not limited to the direction of gravity or the direction in which the semiconductor device is mounted.

[0033] In this specification, technical matters may be described using the Cartesian coordinate axes, the X, Y, and Z axes. The Cartesian coordinate axes merely specify the relative positions of components and do not limit any particular direction. For example, the Z axis does not limit the direction to height relative to the ground. Note that the +Z axis direction and the -Z axis direction are opposite directions. When the sign is not specified and only the Z axis direction is written, it means the direction parallel to the +Z and -Z axes.

[0034] In this specification, the orthogonal axes parallel to the top and bottom surfaces of the semiconductor substrate are defined as the X and Y axes. The axis perpendicular to the top and bottom surfaces of the semiconductor substrate is defined as the Z axis. In this specification, the direction of the Z axis may be referred to as the depth direction. In this specification, the direction parallel to the top and bottom surfaces of the semiconductor substrate, including the X and Y axes, may be referred to as the horizontal direction.

[0035] The region from the center of the semiconductor substrate in the depth direction to the top surface of the semiconductor substrate is sometimes referred to as the top surface. Similarly, the region from the center of the semiconductor substrate in the depth direction to the bottom surface of the semiconductor substrate is sometimes referred to as the bottom surface.

[0036] In this specification, the terms "identical" or "equal" may include cases where there are errors due to manufacturing variations, etc. Such errors are, for example, within 10%.

[0037] In this specification, the conductivity type of a doped region containing impurities is described as either p-type or n-type. In this specification, impurities may specifically refer to either n-type donors or p-type acceptors, and may be referred to as dopants. In this specification, doping means introducing donors or acceptors into a semiconductor substrate to make it a semiconductor exhibiting either an n-type conductivity or a p-type conductivity.

[0038] In this specification, when P+ type or N+ type is mentioned, it means a higher doping concentration than P type or N type, and when P- type or N- type is mentioned, it means a lower doping concentration than P type or N type. Furthermore, when P++ type or N++ type is mentioned in this specification, it means a higher doping concentration than P+ type or N+ type. In this specification, when p type or n type is described in lowercase, it only indicates the conductivity type and does not indicate the magnitude of the doping concentration. Unless otherwise specified, the units used in this specification are the SI units. Although units of length may be expressed in cm, calculations may be performed after converting to meters (m).

[0039] In this specification, doping concentration means the concentration of the donor or acceptor at thermal equilibrium. In this specification, net doping concentration means the net concentration obtained by adding up the charge polarity, with the donor concentration being the concentration of positive ions and the acceptor concentration being the concentration of negative ions. As an example, the donor concentration is N D , the acceptor concentration is N A Therefore, the net doping concentration at any given position is N D -N A In this specification, net doping concentration may be simply referred to as doping concentration.

[0040] In this specification, chemical concentration refers to the atomic density of impurities measured independently of the electrical activation state. Chemical concentration can be measured, for example, by secondary ion mass spectrometry (SIMS). The net doping concentration described above can be measured by voltage-capacitance (CV) spectroscopy. Alternatively, the carrier concentration measured by spheroidal resistance (SR) spectroscopy may be used as the net doping concentration. The carrier concentration measured by CV or SR spectroscopy may be the value at thermal equilibrium. Furthermore, in the n-type region, since the donor concentration is sufficiently larger than the acceptor concentration, the carrier concentration in that region may be used as the donor concentration. Similarly, in the p-type region, the carrier concentration in that region may be used as the acceptor concentration. In this specification, the doping concentration in the n-type region may be referred to as the donor concentration, and the doping concentration in the p-type region may be referred to as the acceptor concentration.

[0041] If the concentration distribution of the donor, acceptor, or net doping has a peak, the peak value may be used as the concentration of the donor, acceptor, or net doping in that region. If the concentrations of the donor, acceptor, or net doping are nearly uniform, the average value of the concentrations of the donor, acceptor, or net doping in that region may be used as the concentration of the donor, acceptor, or net doping. In this specification, concentrations per unit volume are expressed as atoms / cm³. 3 , or / cm 3 This unit is used for donor or acceptor concentrations in semiconductor substrates, or for chemical concentrations. The atom notation may be omitted.

[0042] The carrier concentration measured by the SR method may be lower than the donor or acceptor concentration. When measuring spreading resistance, the carrier mobility of the semiconductor substrate may be lower than the value for the crystalline state in the range where current flows. The decrease in carrier mobility occurs because carriers are scattered due to disorder in the crystal structure caused by lattice defects, etc.

[0043] The donor or acceptor concentrations calculated from carrier concentrations measured by the CV method or SR method may be lower than the chemical concentrations of the elements that act as donors or acceptors. For example, in silicon semiconductors, the donor concentrations of phosphorus or arsenic, or the acceptor concentration of boron, are approximately 99% of their respective chemical concentrations. On the other hand, the donor concentration of hydrogen, which also acts as a donor in silicon semiconductors, is approximately 0.1% to 10% of the hydrogen chemical concentration.

[0044] Figure 1 is a cross-sectional view showing an example of a semiconductor module 200 according to one embodiment of the present invention. The semiconductor module 200 comprises one or more semiconductor chips 212 and a temperature sensing element 100. The semiconductor chip 212 may include a power semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor). The temperature sensing element 100 includes a pn junction diode. The ambient temperature of the temperature sensing element 100 can be calculated by measuring the characteristics of the pn junction diode, such as voltage or current. The semiconductor module 200 may control the semiconductor chip 212 based on the temperature detected by the temperature sensing element 100. For example, when the detected temperature exceeds a reference temperature, the semiconductor module 200 may control the semiconductor chip 212 to an off state and interrupt the current flowing to the semiconductor chip 212.

[0045] The semiconductor module 200 in this example further comprises an insulating substrate 202, a metal layer 206, and a wiring layer 204. The insulating substrate 202, the metal layer 206, and the wiring layer 204 function as a circuit board on which the temperature sensing element 100 is mounted. The insulating substrate 202 is a substrate formed of an insulating material such as resin or ceramic. The metal layer 206 is provided on the lower surface of the insulating substrate 202. The metal layer 206 is formed of a metal such as copper. The metal layer 206 may be connected to a heat sink such as a heat sink fin. The wiring layer 204 is provided on the upper surface of the insulating substrate 202. The wiring layer 204 is formed of a metal such as copper. The insulating substrate 202, the metal layer 206, and the wiring layer 204 may be so-called DCB (Direct Copper Bonding) substrates.

[0046] Each semiconductor chip 212 may be connected to the wiring layer 204 by a conductive joint 210 such as solder. The semiconductor chip 212 has one or more electrodes, but the electrodes are omitted in Figure 1.

[0047] The temperature sensing element 100 is formed on a semiconductor substrate 10 having an upper surface 21 and a lower surface 23. The semiconductor substrate 10 may be made of, for example, silicon, or a compound semiconductor such as SiC or GaN. The lower surface 23 of the semiconductor substrate 10 is connected to the wiring layer 204 via a junction 210. The temperature sensing element 100 has a pn junction diode above the upper surface 21 of the semiconductor substrate 10 or inside the semiconductor substrate 10, but this is omitted in Figure 1. The upper surface 21 of the semiconductor substrate 10 is covered with an interlayer insulating film 38. The interlayer insulating film 38 may be an oxide film such as BPSG, BSG, or HTO, or a nitride film, or a film made by laminating two or more of these films.

[0048] An anode electrode 50 and a cathode electrode 52 are provided above the upper surface 21 of the semiconductor substrate 10. The interlayer insulating film 38 is provided between the upper surface 21 of the semiconductor substrate 10 and the anode electrode 50 and the cathode electrode 52. The anode electrode 50 and the cathode electrode 52 are each connected to other circuits such as a measurement circuit by metal connecting wiring 102. The connecting wiring 102 can be a rod-shaped pin, a plate-shaped lead frame, or a wire.

[0049] If a large potential difference occurs between the wiring layer 204 on which the temperature sensing element 100 is mounted and the anode electrode 50 or cathode electrode 52 of the temperature sensing element 100, a discharge may occur between the wiring layer 204 and the temperature sensing element 100. For example, if the potential of the wiring layer 204 is floating, this potential difference may become large. In this example, the temperature sensing element 100 and semiconductor module 200 suppress the above-mentioned discharge by electrically connecting the wiring layer 204 to the anode electrode 50 or cathode electrode 52.

[0050] Figure 2 is a cross-sectional view showing an example configuration of the temperature detection element 100. In this example, the semiconductor substrate 10 is a bulk N-type substrate. In addition to the configuration shown in Figure 1, the temperature detection element 100 includes a pn junction diode 20 and a conductive portion 12. As shown in Figure 2, the temperature detection element 100 may further include at least one of an initial oxide film 39 and a bottom electrode 54. The initial oxide film 39 may be a film formed by oxidizing the semiconductor substrate 10. The temperature detection element 100 may also further include a protective film 37 and a pad portion 36.

[0051] The pn junction diode 20 has a p-type main anode region 22 and an n-type main cathode region 24. The main anode region 22 and the main cathode region 24 are provided in contact with each other. The main anode region 22 and the main cathode region 24 may be formed on a polycrystalline semiconductor film (e.g., polysilicon) doped with impurities. The main anode region 22 and the main cathode region 24 may be provided above the upper surface 21 of the semiconductor substrate 10. In this example, an initial oxide film 39 is provided between the main anode region 22 and the main cathode region 24 and the upper surface 21 of the semiconductor substrate 10. The main anode region 22 and the main cathode region 24 may be provided on the upper surface of the initial oxide film 39. The initial oxide film 39 is provided between the interlayer insulating film 38 and the upper surface 21 of the semiconductor substrate 10. An interlayer insulating film 38 may be provided between the main anode region 22 and the main cathode region 24 and the upper surface 21 of the semiconductor substrate 10.

[0052] The main anode region 22 is connected to the anode electrode 50. The main cathode region 24 is connected to the cathode electrode 52. In Figure 2, the connecting wires 102 connected to each electrode are omitted. An interlayer insulating film 38 may be provided between the anode electrode 50 and the cathode electrode 52.

[0053] The conductive portion 12 brings one of the anode electrode 50 and the cathode electrode 52 to the same potential as the lower surface 23 of the semiconductor substrate 10. In each example of this specification, the conductive portion 12 electrically connects the cathode electrode 52 to the lower surface 23 of the semiconductor substrate 10. Even when the conductive portion 12 connects the anode electrode 50 to the lower surface 23, the conductive portion 12 may have the same structure and arrangement with respect to the anode electrode 50 as in each example of this specification.

[0054] The conductive portion 12 in this example is provided through the interlayer insulating film 38 and has a through-wiring 14 connecting the cathode electrode 52 and the semiconductor substrate 10. The through-wiring 14 in this example is also provided through the initial oxide film 39. The through-wiring 14 may be made of a metallic material. The through-wiring 14 may be made of the same material as the cathode electrode 52, or it may be made of a different material. The cathode electrode 52 may contain aluminum, for example. The through-wiring 14 may contain aluminum. The through-wiring 14 may be a plug made of tungsten or the like.

[0055] At least a portion of the conductive portion 12 may be located inside the semiconductor substrate 10. In this example, the conductive portion 12 has an n-type conductive region located inside the semiconductor substrate 10. The conductive region has a high-density region 15 and a low-density region 16. The conductive region may further have a bottom surface region 17. In this example, the through-wiring 14 connects the cathode electrode 52 to the conductive region by connecting to the high-density region 15.

[0056] The high-density region 15 is an N-type region exposed on the upper surface 21 of the semiconductor substrate 10. The high-density region 15 may be selectively provided in a portion of the upper surface 21 of the semiconductor substrate 10. The high-density region 15 may be provided in a position that does not overlap with the pn junction diode 20 when viewed from above. Viewing from above refers to observing each component by projecting it onto a plane parallel to the upper surface 21 of the semiconductor substrate 10. The high-density region 15 may be formed by implanting dopant ions such as phosphorus or arsenic through through holes formed in the interlayer insulating film 38.

[0057] The low-density region 16 is provided between the high-density region 15 and the lower surface 23 of the semiconductor substrate 10, and is an N-type region with a lower density than the high-density region 15. The low-density region 16 may be provided over a wider area than the high-density region 15 when viewed from above. The low-density region 16 may also be provided below the main anode region 22 and the main cathode region 24. The low-density region 16 may be exposed on the upper surface 21 of the semiconductor substrate 10. In areas of the upper surface 21 of the semiconductor substrate 10 where the high-density region 15 is not provided, the low-density region 16 may be provided. The low-density region 16 may be provided over the entire surface of the semiconductor substrate 10 when viewed from above.

[0058] The lower surface region 17 is provided between the low-density region 16 and the lower surface 23 of the semiconductor substrate 10, and is an N-type region with a higher density than the low-density region 16. The lower surface region 17 may have the same density as the high-density region 15, a higher density than the high-density region 15, or a lower density. The lower surface region 17 may be provided over a wider area than the high-density region 15 when viewed from above. In this example, the lower surface region 17 is provided over the entire lower surface 23 of the semiconductor substrate 10.

[0059] In this configuration, the lower surface 23 of the semiconductor substrate 10 and the cathode electrode 52 are electrically connected by the conductive portion 12. The lower surface 23 of the semiconductor substrate 10 is electrically connected to the wiring layer 204 by the junction 210 shown in Figure 1. A lower electrode 54 may be provided on the lower surface 23 of the semiconductor substrate 10. The lower electrode 54 may cover the entire lower surface 23. The lower electrode 54 contains a metal such as aluminum. The lower electrode 54 is connected to the junction 210. By providing the lower electrode 54, the connection strength with the junction 210 can be improved. In this example, the wiring layer 204 on which the temperature detection element 100 is placed is at the same potential as the cathode electrode 52. Therefore, discharge between the temperature detection element 100 and the wiring layer 204 can be suppressed. For example, even when a high voltage is applied to the temperature detection element 100 during an insulation test of the semiconductor module 200, discharge between the temperature detection element 100 and the wiring layer 204 can be suppressed.

[0060] Let the thickness between the upper surface 21 and the lower surface 23 of the semiconductor substrate 10 be T. When at least one of the upper surface 21 and the lower surface 23 is not flat, the thickness T may use the minimum value of the distance between the upper surface 21 and the lower surface 23. The thickness T may be 10 μm or more and 300 μm or less. The thickness T may be 20 μm or more, may be 50 μm or more, and may also be 100 μm or more. The thickness T may be 200 μm or less and may also be 100 μm or less.

[0061] The resistivity of the low-concentration region 16 may be 100 Ωcm or less. By reducing the resistivity of the low-concentration region 16, the potential difference between the cathode electrode 52 and the lower surface 23 can be reduced. The resistivity of the low-concentration region 16 may be 80 Ωcm or less, may be 60 Ωcm or less, may be 30 Ωcm or less, may be 10 Ωcm or less, may be 1 Ωcm or less, may be 0.1 Ωcm or less, and may also be 0.01 Ωcm or less. The resistivity of the low-concentration region 16 may be 0.001 Ωcm or more.

[0062] The doping concentration of the low-concentration region 16 may be 1×10 13 / cm 3 or more. By increasing the doping concentration of the low-concentration region 16, the resistivity can be reduced. The doping concentration of the low-concentration region 16 may be 1×10 14 / cm 3 or more, may be 1×10 15 / cm 3 or more, may be 1×10 16 / cm 3 or more, may be 1×10 17 / cm 3 or more, may be 1×10 18 / cm 3 or more, may be 1×10 19 / cm 3 or more, and may also be 1×10 20 / cm 3 or less. When the doping concentration of the low-concentration region 16 is 1×10 14 / cm 3 , the resistivity of the low-concentration region 16 is approximately 46 Ωcm, and when the doping concentration is 1×1019 / cm 3 At this time, the resistivity is approximately 0.0054 Ωcm.

[0063] A protective film 37 made of polyimide or the like may be provided on the anode electrode 50 and the cathode electrode 52. The protective film 37 may be provided with pad portions 36 for electrically connecting to the anode electrode 50 and the cathode electrode 52. The pad portions 36 may be connected to the connection wiring 102. The pad portions 36 have an opening provided in the protective film 37. The anode electrode 50 or the cathode electrode 52 may be exposed at the bottom of the opening and function as the pad portion 36. The opening may be provided with a plated portion 30 that covers the upper surface of the anode electrode 50 or the cathode electrode 52. The plated portion 30 may have an electroless nickel plating layer 32 provided on the upper surface of the anode electrode 50 or the cathode electrode 52. The plated portion 30 may further have a gold plating layer 34 provided on the upper surface of the electroless nickel plating layer 32.

[0064] The interlayer insulating film 38 may have one or more contact holes 59. The contact holes 59 connect the anode electrode 50 or cathode electrode 52 to the pn junction diode 20. Contact holes 59 may also be provided at other locations in the interlayer insulating film 38. At least a portion of the through-wiring 14 may be provided in the contact holes 59.

[0065] Figure 3 is a cross-sectional view showing another example of the temperature sensing element 100. This example of the temperature sensing element 100 differs from the example in Figure 2 in that it does not have a lower surface region 17. The other structures are the same as those of the example in Figure 2.

[0066] Figure 4 shows an example of the structure of a temperature sensing element 100 in a top view. In this example, the temperature sensing element 100 has a semiconductor substrate 10, a pn junction diode 20, a pn junction diode 70, an anode electrode 50, a cathode electrode 52, a connecting electrode 80, a through-wiring 14, and a contact portion 104 in a top view. In Figure 4, the anode electrode 50, cathode electrode 52, connecting electrode 80, and contact hole 59 are shown with dashed lines, and the other structures are shown with solid lines.

[0067] The pn junction diode 20 has a main anode region 22 and a main cathode region 24 arranged side by side in a first direction. In this example, the first direction is the X-axis direction. The main anode region 22 and the main cathode region 24 are each arranged alternately one or more times. In this example, the main anode region 22 and the main cathode region 24 are arranged alternately multiple times. The main anode region 22 is located at one end of the pn junction diode 20 in the X-axis direction and is connected to the anode electrode 50. The main cathode region 24 is located at the other end of the pn junction diode 20 in the X-axis direction and is connected to the cathode electrode 52.

[0068] The pn junction diode 20 in this example includes multiple diode portions. Each main anode region 22 and a main cathode region 24 positioned in contact with the main anode region 22 on the cathode electrode 52 side constitute one diode portion. The connecting electrode 80 connects the main cathode region 24 of one diode portion to the main anode region 22 of another diode portion adjacent to it on the cathode electrode 52 side. As a result, the pn junction diode 20 includes multiple diode portions connected in series in the forward direction between the anode electrode 50 and the cathode electrode 52.

[0069] The pn junction diode 70 has a sub-anode region 72 and a sub-cathode region 74 arranged side by side in the X-axis direction. The sub-anode region 72 and the sub-cathode region 74 are each arranged alternately one or more times. In this example, the sub-anode region 72 and the sub-cathode region 74 are arranged alternately multiple times. The sub-cathode region 74 is located at one end of the pn junction diode 70 in the X-axis direction and is connected to the anode electrode 50. The sub-anode region 72 is located at the other end of the pn junction diode 70 in the X-axis direction and is connected to the cathode electrode 52.

[0070] The pn junction diode 70 in this example includes multiple diode sections. Each sub-anode region 72 and a sub-cathode region 74 positioned in contact with the sub-anode region 72 on the anode electrode 50 side constitute one diode section. The connecting electrode 80 connects the sub-cathode region 74 of one diode section to the sub-anode region 72 of another adjacent diode section on the anode electrode 50 side. As a result, the pn junction diode 70 includes multiple diode sections connected in series in opposite directions between the anode electrode 50 and the cathode electrode 52. In other words, between the anode electrode 50 and the cathode electrode 52, the sub-cathode region 74 and the sub-anode region 72 are provided in antiparallel to the main anode region 22 and the main cathode region 24.

[0071] The pn junction diode 70 functions as a protective element to prevent overvoltage from being applied to the pn junction diode 20. The number of times the sub-anode region 72 and sub-cathode region 74 are repeatedly arranged may be less than the number of times the main anode region 22 and main cathode region 24 are repeatedly arranged. In other words, the number of series connections of diode portions included in the pn junction diode 70 may be less than the number of series connections of diode portions included in the pn junction diode 20. In another example, the pn junction diode 70 may be used as a temperature sensing element by detecting its characteristics. For example, the voltage-current characteristics of the pn junction diode 70 may be detected by applying a high voltage to the cathode electrode 52 and a low voltage to the anode electrode 50.

[0072] The contact portion 104 described above is the portion where the anode electrode 50 and the cathode electrode 52 make contact with their respective connecting wires 102. In the example in Figure 4, contact portion 104-1 corresponds to the anode electrode 50, and contact portion 104-2 corresponds to the cathode electrode 52. If the connecting wires 102 are connected to each electrode with a bonding material such as solder, the contact portion 104 may be the portion where each electrode makes contact with the bonding material.

[0073] The cathode electrode 52 in this example has a first portion 61, a second portion 62, a third portion 63, and a fourth portion 64. The first portion 61 is arranged in the X-axis direction alongside the main anode region 22 and the main cathode region 24. The first portion 61 may also be arranged in the X-axis direction alongside the sub-anode region 72 and the sub-cathode region 74. As shown in Figure 4, the portion of the cathode electrode 52 that is located outside the pn junction diode 20 in the X-axis direction may be designated as the first portion 61.

[0074] The second portion 62 extends from the first portion 61 to a position aligned with the pn junction diode 20 in the Y-axis direction. In this example, the second portion 62 extends to the region outside the pn junction diode 20 in the Y-axis direction. The region outside the pn junction diode 20 is the region sandwiched between the pn junction diode 20 and the edge of the semiconductor substrate 10 in the Y-axis direction. The portion of the cathode electrode 52 sandwiched between the pn junction diode 20 and the edge of the semiconductor substrate 10 in the Y-axis direction may be designated as the second portion 62.

[0075] The third portion 63 extends from the first portion 61 to a position aligned with the pn junction diode 70 in the Y-axis direction. In this example, the third portion 63 extends to the region outside the pn junction diode 70 in the Y-axis direction. The region outside the pn junction diode 70 is the region sandwiched between the pn junction diode 70 and the edge of the semiconductor substrate 10 in the Y-axis direction. The portion of the cathode electrode 52 sandwiched between the pn junction diode 70 and the edge of the semiconductor substrate 10 in the Y-axis direction may be designated as the third portion 63.

[0076] The fourth portion 64 extends from the first portion 61 to a position sandwiched between the pn junction diode 20 and the pn junction diode 70 in the Y-axis direction. The portion of the cathode electrode 52 sandwiched between the pn junction diode 20 and the pn junction diode 70 in the Y-axis direction may be designated as the fourth portion 64.

[0077] In this example, the through-wiring 14 is provided in a position that overlaps with the cathode electrode 52. The area S2 of the through-wiring 14 may be smaller than the area S1 of the contact portion 104-2. Multiple through-wirings 14 may be provided with respect to the cathode electrode 52. In this case, the total area of ​​the multiple through-wirings 14 is denoted as area S2. Area S2 may be half or less of area S1, or 10% or less. By reducing area S2, the flow of current to the lower surface 23 through the through-wiring 14 can be suppressed. The area of ​​the through-wiring 14 may be the area of ​​the portion that is in contact with the semiconductor substrate 10.

[0078] Each through-wiring 14 may be located in an area that does not overlap with the contact portion 104-2. This prevents the formation of steps on the surface of the cathode electrode 52 at the contact portion 104-2. As a result, the reliability of the connection between the connecting wiring 102 and the cathode electrode 52 can be improved.

[0079] Figure 5 illustrates an example of the arrangement of the through-wiring 14. In this example, the through-wiring 14 is closer to the pn junction diode 70 than the contact portion 104-2. In this example, let D1 be the distance between the pn junction diode 70 and the through-wiring 14 in a top view, and let D2 be the distance between the pn junction diode 70 and the contact portion 104-2. Distance D1 is smaller than distance D2. Distance D1 may be less than or equal to half of distance D2. By arranging the through-wiring 14 near the pn junction diode 70, it is not necessary to extend the semiconductor substrate 10 outside the contact portion 104-2 to provide the through-wiring 14. Therefore, the temperature sensing element 100 can be easily miniaturized.

[0080] Figure 6 illustrates another example of the arrangement of the through-wiring 14. In this example, the through-wiring 14 is further away from the pn junction diode 70 than the contact portion 104-2. In other words, in this example, distance D1 is greater than distance D2. Distance D1 may be more than twice the distance D2. The through-wiring 14 may be positioned outside the contact portion 104-2 in the X-axis direction. By positioning the through-wiring 14 far from the pn junction diode 70, the flow of current from the pn junction diode 70 to the through-wiring 14 can be suppressed. Therefore, the impact of the through-wiring 14 on temperature detection can be reduced. At least one through-wiring 14 may be positioned on the extension of the straight line connecting the pn junction diode 70 and the contact portion 104-2.

[0081] Figure 7 illustrates another example of the arrangement of the through-wiring 14. In this example, the region between the contact portion 104-2 and the pn junction diode 20 is defined as the intermediate region 110. The intermediate region 110 may be the region between the main cathode region 24, which is connected to the cathode electrode 52, and the contact portion 104-2. The intermediate region 110 is the main path through which current flows from the pn junction diode 20 to the contact portion 104-2.

[0082] At least one through-wiring 14 may be provided outside the intermediate region 110. This can suppress the flow of current from the pn junction diode 20 to the through-wiring 14. More than half of the through-wirings 14 may be located outside the intermediate region 110, or all of the through-wirings 14 may be located outside the intermediate region 110.

[0083] Figure 8 illustrates another example of the arrangement of the through-wiring 14. In this example, two through-wirings 14 are provided so as to sandwich the contact portion 104-2. The distance D1 from the pn junction diode 20 to either through-wiring 14 may be greater than the distance D2 described above. Either through-wiring 14 may be positioned closer to the pn junction diode 70 than to the contact portion 104-2.

[0084] Figure 9 illustrates another example of the arrangement of the through-wiring 14. In this example, three or more through-wirings 14 are arranged along the Y-axis. In the example of Figure 9, the through-wirings 14 are provided in the region between the pn junction diode 20 and the contact portion 104-2 in the X-axis direction. Some of the through-wirings 14 may or may not be located in the intermediate region 110 shown in Figure 7. In other examples, similar to the example of Figure 6, three or more through-wirings 14 may be arranged outside the contact portion 104-2 in the X-axis direction.

[0085] Figure 10 illustrates another example of the arrangement of the through-wiring 14. In this example, at least one through-wiring 14 is provided in the second portion 62 of the cathode electrode 52. Multiple through-wirings 14 may be provided in the second portion 62. Multiple through-wirings 14 may be arranged in the X-axis direction in the second portion 62. By providing through-wirings 14 in the second portion 62, it is possible to suppress the flow of current from the pn junction diode 20 to the through-wirings 14.

[0086] At least one through-wiring 14 may be provided in the third portion 63 of the cathode electrode 52. Multiple through-wirings 14 may be provided in the third portion 63. Multiple through-wirings 14 may be arranged in the X-axis direction in the third portion 63. By providing through-wirings 14 in the third portion 63, it is possible to suppress the flow of current from the pn junction diode 20 to the through-wirings 14.

[0087] At least one through-wiring 14 may be provided in the fourth portion 64 of the cathode electrode 52. Multiple through-wirings 14 may be provided in the fourth portion 64. Multiple through-wirings 14 may be arranged in the X-axis direction in the fourth portion 64. By providing through-wirings 14 in the fourth portion 64, it is possible to suppress the flow of current from the pn junction diode 20 to the through-wirings 14.

[0088] Through-wiring 14 may be provided in one or more of the second part 62, the third part 63, and the fourth part 64. Through-wiring 14 may not be provided in one or more of the second part 62, the third part 63, and the fourth part 64. Through-wiring 14 may be provided in all of the second part 62, the third part 63, and the fourth part 64.

[0089] The arrangement examples of through-wiring 14 described in Figures 4 to 10 can be combined as appropriate. For example, the arrangement examples of through-wiring 14 in the second section 62, third section 63, and fourth section 64 described in Figure 10 may be combined with the arrangement example of through-wiring 14 in the first section 61 described in any of Figures 4 to 9.

[0090] Figure 11 shows an example of the AA cross-section in Figure 5. The AA cross-section is the XZ plane through which the through-wiring 14 passes. Figure 11 shows a cross-section near the upper surface 21 of the semiconductor substrate 10.

[0091] An initial oxide film 39 is formed on the upper surface 21 of the semiconductor substrate 10 in this example. The initial oxide film 39 in the area where through-wiring 14 is to be formed is partially etched and removed. An interlayer insulating film 38, such as BPSG, is formed above the upper surface 21 of the semiconductor substrate 10. The interlayer insulating film 38 in the area where through-wiring 14 is to be formed is partially etched to form contact holes. The interlayer insulating film 38 may remain inside the initial oxide film 39. Dopant ions are injected through the contact holes formed in the interlayer insulating film 38 to form high-concentration regions 15. After forming the high-concentration regions 15, metal is filled into the contact holes to form through-wiring 14.

[0092] Figures 12A to 12C show other structural examples of the semiconductor module 200. In this example, the structure of the conductive portion 12 differs from the example described in Figures 1 to 11. Other parts are the same as those described in Figures 1 to 11.

[0093] In this example, the conductive portion 12 is provided outside the semiconductor substrate 10 and electrically connects the cathode electrode 52 to the lower surface 23 of the semiconductor substrate. The conductive portion 12 may connect the wiring layer 204 on which the temperature sensing element 100 is mounted to the cathode electrode 52. In this example, the conductive portion 12 is a rod-shaped pin, a plate-shaped lead frame, or a wire. The conductive portion 12 may also connect the wiring layer 204 to the cathode electrode 52 via another circuit board. In this example as well, discharge between the temperature sensing element 100 and the wiring layer 204 can be suppressed.

[0094] Figure 12A shows an example in which a pin-shaped conductive portion 12 is provided. In this example, the cathode electrode 52 is connected to the wiring layer 204 via connecting wiring 102, a circuit board (not shown), and the conductive portion 12. In this example, a cathode potential is applied to the cathode electrode 52 via connecting wiring 102.

[0095] Figure 12B shows an example in which a wire-shaped conductive portion 12 is provided. In this example, the cathode electrode 52 is connected to the wiring layer 204 via the conductive portion 12. The anode electrode 50 may also be connected to the wiring layer 204 by a wire-shaped connecting wire 102.

[0096] Figure 12C shows an example in which a wire-shaped conductive portion 12 is provided. In this example, the cathode electrode 52 is connected to the wiring layer 204 via the conductive portion 12. In this example, a cathode potential is applied to the cathode electrode 52 via the connecting wiring 102.

[0097] The position where the conductive portion 12 in the example of Figure 12C connects to the cathode electrode 52 may be the same as the position of any of the through-wirings 14 described in Figures 4 to 11. Multiple conductive portions 12 may also be provided in this example. In the example described in Figure 2, etc., since the conductive portion 12 is provided inside the semiconductor substrate 10, it is not necessary to provide an area in the wiring layer 204 for connecting the conductive portion 12, such as a wire. For this reason, in the example described in Figure 2, etc., the area on which circuits such as semiconductor chips 212 can be formed in the semiconductor module 200 can be increased.

[0098] Figure 13 is a perspective view showing an example of the appearance of a semiconductor module 200. The semiconductor module 200 in this example has a housing 220 that houses the components described in Figures 1 to 12C. The housing 220 is made of an insulating material such as resin or ceramic. The housing 220 is provided with a plurality of connection pins 222 that connect the outside and inside of the housing 220.

[0099] Figure 14 is a perspective view showing an example of a circuit housed in the enclosure 220. The semiconductor module 200 in this example has an insulating substrate 202 and a wiring substrate 226. The configuration mounted on the insulating substrate 202 is the same as the example described in Figures 1 to 12C. As shown in Figure 14, a plurality of semiconductor chips 212 are provided on the wiring layer 204 of the insulating substrate 202. Pads 230 may be provided on the wiring layer 204. A temperature sensing element 100 is mounted on one of the wiring layers 204.

[0100] The temperature sensing element 100 may be located near the center of the insulating substrate 202, or it may be located at other locations. For example, the temperature sensing element 100 may be located in the central region of the nine regions formed when the long and short sides of the insulating substrate 202 are each divided into three equal parts. The temperature sensing element 100 may also be located between two semiconductor chips 212.

[0101] The wiring board 226 is positioned opposite the surface of the insulating substrate 202 on which the wiring layer 204 is provided. The wiring board 226 is provided with the aforementioned connection pins 222. Wiring is provided on the wiring board 226 to connect the electrodes of the semiconductor chip 212 and the temperature sensing element 100 to the connection pins 222.

[0102] In this example, the wiring board 226 is provided with multiple connection wires 102. Each connection wire 102 may be a pin that penetrates the wiring board 226. Multilayer wiring connected to the connection wires 102 may be formed inside the wiring board 226. Wiring 224, such as a copper pattern, may be provided on the surface of the wiring board 226. The semiconductor chip 212 and the temperature sensing element 100 are connected to the connection pins 222 by these wirings. The conductive portion 12 shown in Figure 12A may connect the electrodes of the temperature sensing element 100 to the wiring layer 204 via the connection wires 102 and the wiring board 226.

[0103] Figure 15 is a flowchart showing an example of a manufacturing method for the temperature sensing element 100. The semiconductor substrate 10 is thermally oxidized to form a semiconductor oxide film (initial oxide film 39) (S1002). Subsequently, a resist is patterned onto the semiconductor oxide film, and only the parts where openings (contact holes 59) should be formed are etched (S1004).

[0104] Subsequently, a polycrystalline semiconductor film (polysilicon film) is deposited on the semiconductor oxide film selectively formed on the upper surface 21 of the semiconductor substrate 10 (the upper surface of the semiconductor oxide film in this example). Then, patterning etching is performed so as to leave the polysilicon film in a predetermined area (S1006).

[0105] Next, an N-type cathode region and a P-type anode region are selectively formed in the polycrystalline semiconductor film. In this example, a P-type dopant and an N-type dopant are selectively introduced into the polysilicon film described above, and then heat-treated to form a pn-junction diode 20 and a pn-junction diode 70 (S1008). The P-type dopant is, for example, boron. The N-type dopant is, for example, arsenic. For example, boron is ion-implanted into the entire polysilicon film. After that, a resist is patterned on the polysilicon film, and arsenic is injected into the openings of the resist to make only the implanted region exposed at the openings N-type, thereby forming an N-type contact layer (high-concentration region 15). The openings in the resist correspond to the cathode region and the N-type contact layer in contact with the through-holes. After the resist is removed, heat treatment is performed (S1008).

[0106] Next, an interlayer insulating film 38 is deposited on the upper surface 21 of the semiconductor substrate 10, and openings (contact holes 59) are formed in the interlayer insulating film 38 by patterning and etching of the resist (S1010). Subsequently, a metal electrode is deposited on the upper surface 21 of the semiconductor substrate 10 and patterned and etched (S1012). This forms an anode electrode 50 and a cathode electrode 52, and connects the through-wiring 14 (cathode electrode 52) to the high-concentration region 15, forming a conductive portion 12. After that, an inert / protective film 37 (such as a polyimide film) may be provided. Furthermore, a bottom electrode 54 is formed so as to be in contact with the bottom surface 23 of the semiconductor substrate 10.

[0107] Next, the temperature sensing element 100 is connected to the wiring layer 204 by soldering or the like. Furthermore, the wiring layer 204 and the pad portion 36 are electrically connected and brought to the same potential, as shown in the examples in Figures 12A to 12C. This electrically connects the conductive portion 12 and the wiring layer 204, bringing the cathode electrode 52 and the wiring layer 204 to the same potential, thereby suppressing discharge between the temperature sensing element 100 and the wiring layer 204.

[0108] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above embodiments. It will be clear from the claims that such modified or improved forms may also be included in the technical scope of the present invention.

[0109] It should be noted that the execution order of operations, procedures, steps, and stages in the apparatus, systems, programs, and methods shown in the claims, specifications, and drawings is not explicitly stated as "before," "prior to," etc., and that these can be implemented in any order unless the output of a previous process is used in a later process. Even if the operation flow in the claims, specifications, and drawings is described using phrases such as "first," "next," etc. for convenience, it does not mean that it is essential to perform the operations in that order. [Explanation of Symbols]

[0110] 10...Semiconductor substrate, 12...Conductive area, 14...Through-hole wiring, 15...High-concentration area, 16...Low-concentration area, 17...Bottom area, 20...pn junction diode, 21...Top surface, 22...Main anode area, 23...Bottom surface, 24...Main cathode area, 30...Plated area, 32...Electroless nickel plating layer, 34...Gold plating layer, 36...Pad area, 37...Protective film, 38...Interlayer insulating film, 39...Initial oxide film, 50...Anode electrode, 52...Cathode electrode, 54...Bottom electrode, 59...Contact hole, 61... • Part 1, 62... Part 2, 63... Part 3, 64... Part 4, 70... pn junction diode, 72... Sub-anode region, 74... Sub-cathode region, 80... Connecting electrode, 100... Temperature sensing element, 102... Connecting wiring, 104... Contact portion, 110... Intermediate region, 200... Semiconductor module, 202... Insulating substrate, 204... Wiring layer, 206... Metal layer, 210... Junction, 212... Semiconductor chip, 220... Housing, 222... Connecting pins, 224... Wiring, 226... Wiring board, 230... Pad

Claims

1. A temperature detection element formed on a semiconductor substrate having an upper surface and a lower surface, An anode electrode and a cathode electrode are provided above the upper surface of the semiconductor substrate, A first conductivity type main cathode region connected to the cathode electrode, A second conductivity type main anode region is provided in contact with the main cathode region and connected to the anode electrode, A conductive portion that brings one of the anode electrode and the cathode electrode to the same potential as the lower surface of the semiconductor substrate. A temperature detection element equipped with the following features.

2. The semiconductor substrate has a semiconductor oxide film on its upper surface, The main cathode region and the main anode region are formed on the upper surface of the semiconductor oxide film. The temperature detection element according to claim 1.

3. The main cathode region and the main anode region are formed in a polycrystalline semiconductor film. The temperature detection element according to claim 1 or 2.

4. The conductive portion electrically connects the cathode electrode and the lower surface of the semiconductor substrate. The temperature detection element according to claim 2.

5. The conductive portion has a conductive region of a first conductivity type provided inside the semiconductor substrate. The temperature detection element according to claim 4.

6. The semiconductor substrate further comprises an interlayer insulating film provided between the upper surface and the cathode electrode, The conductive portion is provided penetrating the interlayer insulating film and the semiconductor oxide film, and has through wiring connecting the cathode electrode and the conductive region. The temperature detection element according to claim 5.

7. The aforementioned conductive region is, A high-concentration region connected to the aforementioned through-wiring, A low-concentration region is provided between the high-concentration region and the lower surface of the semiconductor substrate, and the low-concentration region has a lower concentration than the high-concentration region. A temperature detection element according to claim 6, including the above.

8. The low-concentration region is also provided below the main anode region and the main cathode region. The temperature detection element according to claim 7.

9. The conductive region is provided between the low-concentration region and the lower surface of the semiconductor substrate, and further includes a lower surface region with a higher concentration than the low-concentration region. The temperature detection element according to claim 7 or 8.

10. The resistivity in the low-concentration region is 100 Ωcm or less. The temperature detection element according to claim 7 or 8.

11. The doping concentration in the low concentration region is 1 × 10 １３ / cm ３ That's all. The temperature detection element according to claim 7 or 8.

12. The thickness between the upper surface and the lower surface of the semiconductor substrate is 10 μm or more and 300 μm or less. The temperature detection element according to claim 1 or 2.

13. The cathode electrode is further provided with connecting wiring, The area of ​​the through-wiring is smaller than the area of ​​the contact portion where the cathode electrode and the connecting wiring come into contact. A temperature detection element according to any one of claims 6 to 8.

14. The cathode electrode is further provided with connecting wiring, The through-wiring is further away from the main anode region and the main cathode region than the contact portion where the cathode electrode and the connecting wiring come into contact. A temperature detection element according to any one of claims 6 to 8.

15. The cathode electrode is further provided with connecting wiring, The through-wiring is closer to the main anode region and the main cathode region than the contact portion where the cathode electrode and the connecting wiring come into contact. A temperature detection element according to any one of claims 6 to 8.

16. The cathode electrode is further provided with connecting wiring, At least one through-wiring is provided outside the contact portion where the cathode electrode and the connecting wiring come into contact, and outside the intermediate region between the main anode region and the main cathode region. A temperature detection element according to any one of claims 6 to 8.

17. The cathode electrode is further provided with connecting wiring, The through-wiring is provided in a region that does not overlap with the contact area where the cathode electrode and the connecting wiring come into contact. A temperature detection element according to any one of claims 6 to 8.

18. Multiple through-wiring connections are provided. A temperature detection element according to any one of claims 6 to 8.

19. The cathode electrode is further provided with connecting wiring, Two through-wirings are provided so as to sandwich the contact portion where the cathode electrode and the connecting wiring come into contact. The temperature detection element according to claim 18.

20. The main anode region and the main cathode region are arranged side by side in the first direction. The cathode electrode is A first portion arranged alongside the main anode region and the main cathode region in the first direction, A second portion is provided extending from the first portion to a position aligned with the main anode region and the main cathode region in a second direction perpendicular to the first direction. It has, The through wiring is provided in the second portion. A temperature detection element according to any one of claims 6 to 8.

21. The device further comprises a sub-cathode region of a first conductivity type and a sub-anode region of a second conductivity type, which are arranged in antiparallel to the main anode region and the main cathode region. The temperature detection element according to claim 1 or 2.

22. The main anode region and the main cathode region are each arranged alternately one or more times. The sub-anode region and the sub-cathode region are each arranged alternately one or more times. The number of times the sub-anode region and the sub-cathode region are repeatedly arranged is less than the number of times the main anode region and the main cathode region are repeatedly arranged. The temperature detection element according to claim 21.

23. The conductive portion is provided outside the semiconductor substrate and electrically connects the cathode electrode to the lower surface of the semiconductor substrate. The temperature detection element according to claim 1.

24. A temperature detection element according to claim 1, A circuit board on which the temperature sensing element is mounted and Equipped with, The lower surface of the semiconductor substrate and the circuit board are arranged facing each other. One of the anode electrode and the cathode electrode is electrically connected to the circuit board via the conductive portion. Semiconductor module.

25. A process of forming a semiconductor oxide film by thermal oxidation of a semiconductor substrate, A step of forming an opening in a part of the semiconductor oxide film, A step of selectively forming a polycrystalline semiconductor film on the upper surface of the semiconductor substrate, The process involves selectively forming a cathode region of a first conductivity type and an anode region of a second conductivity type in the polycrystalline semiconductor film, and forming a high-concentration region of the same conductivity type as the semiconductor substrate on the upper surface of the semiconductor substrate exposed to the opening of the semiconductor oxide film. The process of forming an interlayer insulating film on the upper surface side of the semiconductor substrate, A step of selectively forming a metal electrode on the upper surface side of the semiconductor substrate, forming an anode electrode connected to the anode region and a cathode electrode connected to the cathode region, and forming a conductive portion by connecting the cathode electrode and the high-concentration region, The steps include connecting the semiconductor substrate to the wiring layer, and electrically connecting the conductive portion and the wiring layer. A method for manufacturing a temperature detection element having the following characteristics.

Images