Recess-based pick-and-place for heterogeneous integration

Abstract

1. An apparatus for die placement, comprising: a first stage including a plurality of recesses configured to receive a plurality of donor dies; a second stage including supports for one or more targets; and a measurement system operatively coupled to the first stage and configured to: acquire locations of the plurality of donor dies within the plurality of recesses of the first stage; provide output signals for adjusting locations of the plurality of donor dies supported by the first stage to correspond to locations of the one or more targets based at least on the acquired locations; and provide output signals for placing the plurality of donor dies onto the one or more targets supported by the second stage by relative motion between the first stage and the second stage based at least in part on the adjusted locations.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to European Patent Application No. 22217347.8, filed December 30, 2022, which is incorporated herein by reference in its entirety.

[0002]

[0002] The present disclosure relates generally to systems and methods for heterogeneous integration. [Background technology]

[0003]

[0003] In the manufacturing process of integrated circuits (ICs), multiple finished or unfinished ICs (e.g., whole wafers, diced wafers, partially diced wafers, chips, dies, etc.) may be placed in contact, stacked, bonded, or otherwise coupled (e.g., to heterogeneous or homogeneous devices) at various points in the fabrication process. Heterogeneous integration, e.g., the integration of different circuits or other patterned devices, may depend on the coupling of specific portions (e.g., conductive contact elements) of multiple dies—where the specific portions may be aligned in three-dimensional space to ensure functional connectivity. The alignment of these dies with each other, which may have multiple fabrication layers, different critical dimensions, different nodes, packaging, etc., may require techniques different from those used for lithography during fabrication. As the physical size of IC components continues to shrink and their structures continue to become more complex, integration accuracy and throughput become even more important. For applications such as heterogeneous integration, it may be desirable to obtain accurate and fast die placement relative to each other.

[0004] In the context of semiconductor manufacturing, improvements in die placement and alignment (eg, improved heterogeneous integration) lead to improved IC manufacturing and integration capabilities. Summary of the Invention

[0005] According to one embodiment, an apparatus for die placement is provided, the apparatus comprising: a first stage including a plurality of recesses configured to receive a plurality of donor dies; a second stage including supports for one or more targets; a measurement system operatively coupled to the first stage and configured to acquire locations of the plurality of donor dies within the plurality of recesses of the first stage; the measurement system configured to provide output signals for adjusting locations of the plurality of donor dies supported by the first stage to correspond to locations of the one or more targets based at least on the acquired locations; and the measurement system configured to provide output signals for placing the plurality of donor dies onto the one or more targets supported by the second stage by relative motion between the first stage and the second stage based at least in part on the adjusted locations.

[0006] In one embodiment, an adjustable stage is disposed within the plurality of recesses, the adjustable stage configured to support the plurality of donor dies, and the measurement system is further configured to provide an output signal for adjusting the location of the plurality of donor dies using the adjustable stage supporting the plurality of donor dies.

[0007] In one embodiment, the measurement system further includes an imaging device configured to acquire images of the plurality of donor dies within the plurality of recesses, and a processor in communication with the imaging device and configured to determine locations of the plurality of donor dies within the plurality of recesses based on the images of the plurality of donor dies within the plurality of recesses.

[0008] In one embodiment, the apparatus further includes a voltage source, and the measurement system is further configured to provide an output signal to the voltage source, the voltage source configured to cause alignment of the multiple donor dies with the one or more targets when the multiple donor dies are positioned on the one or more targets by relative motion between the first stage and the second stage.

[0009] According to another embodiment, there is provided a method for die placement, the method including placing a plurality of donor dies into a plurality of recesses in a first stage, the first stage being at a first position relative to a second stage. The method includes measuring locations of the plurality of donor dies in the plurality of recesses. The method includes adjusting locations of the plurality of donor dies in the plurality of recesses to correspond to a plurality of target locations, the plurality of target locations corresponding to the second stage. The method includes placing the plurality of donor dies on the plurality of target locations, the first stage being at a second position relative to the second stage, the first locations being different from the second locations.

[0010] According to one embodiment, there is provided a die placement tool configured to perform the method of any other embodiment.

[0011]

[0011] According to another embodiment, one or more non-transitory machine-readable media are provided having instructions thereon that, when executed by a processor, are configured to perform the method of any other embodiment.

[0012]

[0012] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments and, together with the description, explain these embodiments. Embodiments of the present invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which: [Brief explanation of the drawings]

[0013] [Figures 1A-1D] 1 is a schematic diagram illustrating an exemplary die bonding method, according to one embodiment. [Figure 2]

[0014] 1 is a schematic diagram illustrating a die placement method using a movable stage with a recess, according to one embodiment. [Figure 3]

[0015] 1 is a schematic diagram illustrating a heterogeneous die integration layout method according to one embodiment. [Figure 4]

[0016] 1 is a flowchart illustrating a die placement method according to one embodiment. [Figure 5A-5B]

[0017] 10A-10C are schematic diagrams illustrating how a die is placed into a recess in a movable stage, according to one embodiment. [Figures 6A-6B]

[0018] 10A-10C are schematic diagrams illustrating a method for adjusting the placement of a die within a recess in a movable stage, according to one embodiment. [Figure 7A-7C]

[0019] FIG. 7A is a schematic diagram illustrating a method for placing a die on a target using a recess in a movable stage, according to one embodiment. [Figure 8]

[0020] FIG. 8 is a flowchart illustrating a die adjustment method according to one embodiment. [Figure 9]

[0021] FIG. 9 is a schematic diagram illustrating a die location measurement method using two-dimensional images, according to one embodiment. [Figures 10A-10B]

[0022] FIG. 10A is a schematic diagram illustrating a die location measurement method using a one-dimensional image, according to one embodiment. [Figure 11]

[0023] FIG. 11 is a flowchart illustrating a die location determination method according to one embodiment. [Figure 12]

[0024] FIG. 12 is a block diagram of an exemplary computer system according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0025] Embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments are provided as illustrative examples of the present disclosure to enable those skilled in the art to practice the present disclosure. Notably, the figures and the following examples are not intended to limit the scope of the present disclosure to a single embodiment; other embodiments are possible through the replacement of some or all of the elements described or illustrated. Furthermore, where certain elements of the present disclosure can be implemented partially or completely using known components, only those portions of such known components necessary for an understanding of the present disclosure will be described, and detailed descriptions of other portions of such known components will be omitted so as not to obscure the present disclosure. Embodiments described as being implemented in software should not be limited thereto and, unless otherwise specified herein, can include embodiments implemented in hardware or a combination of software and hardware, as will be apparent to those skilled in the art, and vice versa. Herein, embodiments showing a single component should not be considered limiting; rather, the present disclosure is intended to encompass other embodiments including multiple identical components, and vice versa, unless otherwise specified herein. Furthermore, applicants do not intend to attribute any non-generic or special meaning to any term in the specification or claims unless expressly stated as such. Furthermore, the present disclosure encompasses present and future known equivalents to known components referenced herein as examples.

[0015]

[0026] Although specific reference may be made herein to the fabrication of ICs, it should be clearly understood that the description herein has many other possible applications. For example, it may be employed in the fabrication of integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid crystal display panels, thin-film magnetic heads, etc. Those skilled in the art will understand that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein should be considered interchangeable with the more general terms “substrate” and “target portion,” respectively. The term “wafer” may be used generally to refer to a larger fabrication unit (which may be the largest fabrication unit), while the term “die” may be used to refer to a smaller fabrication unit, which may correspond to a lithography pattern, a portion of a lithography pattern, multiple lithography patterns, etc. A “die” may correspond to a portion of a “wafer”—i.e., a “die” may be created by dicing or otherwise dividing a “wafer.” The term “die” should be considered interchangeable with the terms chip, chiplet, or other terms for dividing ICs. A patterning device (e.g., a lithography device) can contain or form one or more patterns, which may correspond to one or more dies. The patterns can be generated based on the pattern or design layout using a CAD (computer-aided design) program, a process often referred to as EDA (electronic design automation). As used throughout this application, "or" has a non-exclusive meaning, for example, including both "and" and "or," unless otherwise indicated.

[0016]

[0027] Reference is now made to FIGS. 1A-1D, which are schematic diagrams illustrating an exemplary die bonding method according to an embodiment of the present disclosure. The exemplary die bonding method is illustrated with respect to a set of reference axes. The reference axes are provided merely for ease of explanation and should not be construed as limiting. The included methods and apparatus may instead be described with reference to a different set of axes (e.g., cylindrical coordinates, polar coordinates, etc.), a different origin (e.g., an origin within the donor die, an origin within the target, an origin between the donor die and the target, etc.), or a different orientation. The set of reference axes is selected such that the die fabrication plane (i.e., the wafer surface) lies in the xy plane, and the fabrication direction for both the donor die and the target location is parallel or anti-parallel to the z-axis.

[0017]

[0028] As shown in FIGS. 1A-1D, an exemplary die bonding method may include a donor die 102 and a target die 104. The terms "donor" and "target" are used herein for ease of description. It should be understood that the terms "donor" and "target" are provided for reference and are relative, and that an element described as corresponding to the "donor" may instead correspond to the "target," and vice versa. The donor die 102 may have an electrically active area 106. The electrically active area 106 may correspond to a via (e.g., a through silicon via (TSV)), an electrical contact line, a contact pad, a packaging pad, or other conductive area. The donor die 102 may have one or more electrically inactive areas (e.g., electrically insulating areas) outside the electrically active area 106. The electrically active area 106 may be recessed (as shown) relative to other surfaces of the donor die 102. Electrically active regions 106 may correspond to contacts (e.g., to a source, to a drain, to a gate, etc.) to electrical devices (not shown) in donor die 102. Target die 104 may similarly have electrically active regions 108, which may have similar properties as electrically active regions 106.

[0018]

[0029] 1A, an exemplary die-bonding method may include aligning at least a portion of the electrically active area 106 of the donor die 102 with at least a portion of the electrically active area 108 of the target die 104. The exemplary die-bonding method may include contacting the donor die 102 with the target die 104 while maintaining alignment between the electrically active area 106 and the electrically active area 108. Alignment may be complicated by multiple layers of the donor die 102 or multiple layers of the target die 104, which may be optically opaque. FIGS. 1A-1C show cross-sectional views of portions of an exemplary die-bonding method.

[0019]

[0030] As further shown in FIG. 1A , the donor die 102 and the target die 104 can be brought together along the z-axis, while the position of the donor die 102 or the target die 104 can be adjusted in the x-y plane (e.g., perpendicular to the approach z-axis). As shown in FIG. 1B , the donor die 102 and the target die 104 can be annealed after contact. The annealing can be or include thermal annealing, electrical annealing, an electrostatic process, a van der Waals process, etc. As shown in FIG. 1C , the annealing can cause physical or chemical changes within the electrically active region 106 of the donor die 102 or the electrically active region 108 of the target die 104, which can result in physical or electrical contact between the electrically active region 106 and the electrically active region 108. Thus, the annealing can create electrical connectivity (e.g., integration) between elements of the donor die 102 and the target die 104. This electrical connectivity can occur even if electrically active area 106 and electrically active area 108 are different—for example, have different recess depths, are made of different materials, have different dimensions, etc.

[0020]

[0031] FIG. 1D shows a plan view of an exemplary die bonding method according to the present disclosure. As shown in FIG. 1D , the donor die 102 and the target die 104 may have alignment marks along the xy plane to facilitate alignment of the die as a whole. Alignment marks in the xy plane of the die (e.g., alignment mark 116 on the donor die 102 or alignment mark 118 on the target die 104) may reduce the area available for circuitry. Alignment marks may be additively or subtractively fabricated, for example, by etching or deposition in the z direction. Alignment marks used during wafer fabrication (such as alignment marks used for alignment of one or more fabrication layers during lithography) may be located in waste areas, such as areas between chips, that may then be discarded (e.g., removed) during dicing. Dicing, as used herein, may refer to the mechanical separation of an area of ​​a wafer (e.g., a fabrication unit) into smaller areas (e.g., dies or chips) that may contain one or more operational units (e.g., logic devices, memory units, etc.). Dicing can be performed using any suitable method, such as scribing and breaking, mechanical sawing, laser cutting, etc., and can destroy non-zero linewidth portions of the wafer volume (e.g., grinding them into powder or otherwise rendering them inoperable for circuitry placement) when separating the dies. Alternatively, the electrically active areas 106 of the donor die 102 or the electrically active areas 108 of the target die 104 (not shown in FIG. 1D ), or other surface features, can serve as reference marks (e.g., alignment marks) for alignment of the donor die 102 and the target die 104. The donor die 102 and the target die 104 can be aligned in three dimensions before or during contact between the donor die 102 and the target die 104. For example, the donor die 102 or the target die 104 can be positioned or adjusted in the x-y plane when the donor die 102 within the target die 104 is brought into contact.The donor die 102 or target die 104 may be positioned or adjusted by movement of a die actuator or other die-scale element, for example, by a piezoelectric stepper element, or by movement of a wafer chuck or other wafer-scale element, for example, by a stepper element.

[0021]

[0032] The position of the donor die 102 or the target die 104 can be adjusted with respect to up to six degrees of freedom. For example, given an origin at the center of the donor die 102, the donor die 102 can be adjusted by movement along the x-axis (e.g., in a positive or negative x-direction), along the y-axis (e.g., in a positive or negative y-direction), or along the z-axis (e.g., in a positive or negative z-direction). The donor die 102 can also be adjusted rotationally about each of these axes—e.g., rotated about the x-axis, rotated about the y-axis, and rotated about the z-axis. That is, the donor die 102 can be adjusted by free rotation in space described by six different types of motion (the motions listed above are provided as examples, but motion may be described by other axes).

[0022]

[0033] FIG. 2 is a schematic diagram illustrating a method for positioning a die using a movable stage having a recess. While FIG. 2 is described with reference to a "donor die" and a "target die," these are relative descriptors, and a donor die may alternatively be a target die, and vice versa. FIG. 2 is a cross-sectional view of the positioning of donor dies 210A-210E using a support stage 202. The support stage 202 is substantially circular in the xz plane and has a longitudinal axis 204 along the y direction (e.g., the support stage 202 is substantially cylindrical in three dimensions). The support stage 202 may alternatively have a different cross-sectional shape, such as a square, hexagon, etc. The support stage 202 may have a symmetric cross-section (e.g., as shown) with one or more axes of symmetry, or an asymmetric cross-sectional area (e.g., an irregular polygon).

[0023]

[0034] The support stage 202 has recesses 216A-216D having recess depths 214 and recess widths 212. The recesses may also have recess lengths in the y-direction (not shown). While the recesses 216A-216D are shown as having substantially similar dimensions, the recesses 216A-216D may instead have variable recess depths 214 (e.g., different recess depths 214 for recesses 216A and 216B), or variable recess widths 212 (e.g., different recess widths for recesses 216C and 216D), or variable recess lengths (e.g., different recess lengths for recesses 216B and 216D). The arrangement of the recesses 216A-216D may be symmetric or asymmetric about the cross-sectional area of ​​the support stage 202. The support stage 202 may have a substantially symmetric cross-section but an asymmetric arrangement of the recesses. For example, the support stage 202 may have a cross section that is a regular hexagon, but with recesses that are asymmetrically positioned along its longitudinal plane.

[0024]

[0035] Recesses 216A-216D are capable of receiving donor dies, such as donor dies 210A-210E. Donor dies 210A-210E have die depths 224 and die widths 222. Donor dies 210A-210E may also have die lengths in the y-direction (not shown). Although donor dies 210A-210E are shown as having substantially similar dimensions, donor dies 210A-210E may instead have variable die depths 224 (e.g., different die depths 224 for recess 216A and recess 216B), or variable recess die widths 222 (e.g., different die widths for recess 216C and recess 216D), or variable recess lengths (e.g., different die lengths for recess 216B and recess 216D). Die widths 222 may be smaller than recess widths 212. Die depth 224 can be less than, greater than, or substantially the same as recess depth 214. That is, donor dies 210A-210E, when occupying recesses 216A-216D, can sit substantially recessed from the surface of support stage 202, sit substantially flush with the surface of support stage 202, or protrude from the surface of support stage 202.

[0025]

[0036] The support stage 202 can be controllably moved in a direction 206 about a longitudinal axis 204. The direction 206 is provided as an example. The support stage 202 can alternatively be rotated in the opposite direction or any suitable direction, translated in the x, y, or z directions, or any combination thereof. The support stage 202 can be operated in both a rotational and a translational mode, for example, sequentially or simultaneously. For example, the support stage 202 can move in the negative x direction toward the support structure 250 while also rotating about the longitudinal axis 204. The support stage 202 can move continuously or intermittently. For example, the support stage 202 can rotate in the direction 206 and stop at four (or fewer or more) positions corresponding to movements in die placement. Exemplary positions and movements will now be further described. These positions and actions are provided by way of example only, and multiple actions may be performed at a single position, a position may not correspond to an action (e.g., may correspond to a null action), an action may be performed at multiple positions (e.g., an action may be performed multiple times or in steps separated between positions), etc. Although these positions and actions are described as occurring at discrete positions (e.g., when the movement of the support stage 202 is substantially zero), the positions may instead correspond to continuous (or quasi-continuous) movement, or the actions may occur while the support stage 202 is moving in one or more directions (e.g., while rotating, translating, etc.).

[0026]

[0037] For example, a first position corresponding to the position shown for donor die 210A may correspond to placing the die within a recess of support stage 202 (e.g., within recess 216A). Donor die 210A may be placed within recess 216A by pick-and-place element 230. Pick-and-place element 230 may place donor die 210A within recess 216A on support stage 202 based on alignment information (e.g., based on detecting the position of recess 216A), based on position information of support stage 202 (e.g., based on detecting that support stage 202 is in the first position), etc. Pick-and-place element 230 may place donor die 210A on the support structure at a given position relative to recess 216A. For example, pick-and-place element 230 may center donor die 210A within recess 216A. Pick-and-place element 230 may have inherent tolerances or errors.

[0027]

[0038] The placement of the donor die 210A within the recess 216A may have an intended position (e.g., centered within the recess 216A) and an actual position, which may differ from the intended position based on the limitations of the pick-and-place element 230. The intended position may be a position that is not at the center of the recess 216A. The intended position may be identified in two directions (e.g., in the xz plane for the donor die 210A as shown). The intended position may be identified in three directions (e.g., in xyx space for the donor die 210A as shown). The intended position may be identified in up to six directions (or degrees of freedom), for example, with respect to position in xyz space and with respect to rotation along each of the xyz axes (in free space). The intended position may be identified with respect to any suitable dimension or direction. The actual position (e.g., of the donor die 210A) may similarly be described by any suitable dimension or direction, such as those described with reference to the intended position. The difference between the intended position and the actual position will be further explained with reference to the second position (eg, the position of donor die 210B and recess 216B).

[0028]

[0039] The difference between the intended position and the actual position may be limited by the difference between the size of recess 216A and the size of die 210A. For example, pick-and-place element 230 may attempt to place donor die 210A within recess 216A. If pick-and-place element 230 does not place donor die 210A within recess 216A, which may occur if donor die 210A is not properly aligned with recess 216A (e.g., if donor die 210A interfaces with a non-recessed portion of support stage 202), pick-and-place element 230 may detect that donor die 210A is not positioned within recess 216A (e.g., based on detecting the distance in the z direction) or is only partially positioned within recess 216A (e.g., based on detecting the angle of donor die 210A relative to the z direction). If pick-and-place element 230 does not place donor die 210A in recess 216A (or detects that donor die 210A is not placed in recess 216A), pick-and-place element 230 may remove donor die 210A and then attempt to reposition donor die 210A (or another die) in recess 216A. Pick-and-place element 230 may also, or alternatively, leave recess 216A empty if donor die 210A is not successfully placed in recess 216A.

[0029]

[0040] The pick-and-place element 230 may attach an end effector (such as a conical suction end effector indicated by dashed oval 232) to one or more surfaces of the donor die 210A. Other end effector configurations and methods of placement of the donor die 210A may also be used, such as clamping, hydraulic, electrostatic, capacitive, and other types of attachment. The pick-and-place element 230 may move the donor die 210A from a pickup location (e.g., a chip storage location) to a release location, which may be recess 216A. The pick-and-place element may move the donor die 210A in one or more directions. The pick-and-place element 230 may be a chip shooter. The pick-and-place element 230 may attach the donor die 210A electrostatically, through the use of suction, through hydraulic effects, through capacitive attraction, etc. Pick-and-place element 230 can interact with donor die 210A via an end effector that can controllably hold and release donor die 210A.

[0030]

[0041] Once donor die 210A is positioned within recess 216A, support stage 202 may be moved (e.g., in direction 206) so that donor die 210A occupies the position of donor die 210B, and so that recess 216A occupies the position of recess 216B—which may be a second position of the support structure. Henceforth, the second position of the support structure will be described with reference to donor die 210B and recess 216B. It should be understood that donor die 210B and recess 216B may be donor die 210A and recess 216A after movement of the support structure from the first position to the second position.

[0031]

[0042] For example, the second position, corresponding to the position shown for donor die 210B, may correspond to measuring the position of the die within the recess of support stage 202 (e.g., of donor die 210B within recess 216B). The position (e.g., location) of donor die 210B may be measured by location measurement element 240. Location measurement element 240 may measure the actual position of donor die 210B in relative terms (e.g., relative to an edge of recess 216B) or in absolute terms (e.g., distance from an origin on support stage 202, on location measurement element 240, etc.). Location measurement element 240 may measure the intended position of donor die 210B, for example, by measuring the extent of recess 216B. Location measurement element 240 may be a camera, e.g., a two-dimensional camera, two or more one-dimensional cameras, an optical camera, etc., or another measurement device. The location measurement element 240 may be comprised of multiple location measurement elements, such as an in-plane measurement device capable of measuring location in the yz plane (relative to a reference axis) and an out-of-plane measurement device capable of measuring location or distance in the x direction (relative to a reference axis). The location measurement element 240 may include one or more confocal microscopes capable of measuring depth (or other distance). The location measurement element 240 may measure position, relative or absolute position, using overlay diffraction or other diffraction-based methods. The location measurement element 240 may operate in a scanning mode or from a fixed position relative to the support stage 202.

[0032]

[0043] Once the position of donor die 210B within recess 216B is determined, support stage 202 can be moved (e.g., in direction 206) so that donor die 210B occupies the position of donor die 210C, and so that recess 216B occupies the position of recess 216C—which may be a third position of support stage 202. Henceforth, the third position of the support structure will be described with reference to donor die 210C and recess 216C. It should be understood that donor die 210C and recess 216C may be donor die 210A and recess 216A after movement of the support structure from the first position to the third position, or similarly, donor die 210B and recess 216B after movement of the support structure from the second position to the third position.

[0033]

[0044] For example, the third position, corresponding to the position shown for donor die 210C, may correspond to adjusting the position of the die within the recess of support stage 202 (e.g., donor die 210C within recess 216C). The position of donor die 210C may be adjusted based on a measured position of donor die 210C, for example, obtained when the support structure is in the second position. The position of donor die 210C may be adjusted based on a relationship (e.g., difference) between the intended position and the actual position of donor die 210C. The position of donor die 210C may be adjusted by a die actuator (not shown). Die actuator is used herein to refer to a structure including a die chuck or other die receptacle as well as one or more controllable actuators that can adjust the position of the die in at least one direction. The die actuator may adjust the position of the die (e.g., donor die 210C) in one or more directions sequentially or simultaneously. The die actuator may be comprised of multiple die actuators or may be operable in multiple directions, e.g., in-plane (e.g., along the x-y plane for donor die 210C), out-of-plane (along the z-direction for donor die 210C), with respect to three dimensions, with respect to four degrees of freedom (e.g., with respect to in-plane directions and with respect to rotation angles along in-plane axes), with respect to six degrees of freedom (e.g., with respect to x-y-z space and with respect to rotation angles along each of orthogonal axes), etc. The die actuators may be integrated into support stage 202 or may be separate elements along the bottom or sides of recesses 210A-210D of the support structure. The die actuators may be attached to a die (e.g., donor die 210C) before it is placed in recess 216C (e.g., in the first position). Each recess or die may have one or more die actuators.

[0034]

[0045] The die actuator may be a device capable of supporting one or more dies (e.g., donor die 210C). The die actuator may support the dies on one or more die chucks or other support structures. The die actuator may electrostatically or otherwise secure the dies to one or more die chucks or other support structures. The die actuator may have one or more adjustable elements (e.g., struts) that can be activated to adjust the position of the dies. The die actuator may be electrically controllable. The die actuator may be reusable—i.e., the die actuator may attach and release the donor die 210C (e.g., attach the donor die 210C at a first position and release the donor die 210C at a fourth position, which will be described later). The die actuator may include a piezoelectric element. The die actuator may include a spring element. The die actuator may include a dynamic (e.g., sliding, bending, rolling, etc.) element that may enable self-alignment of the die with a target location. Other methods of self-alignment may also be used, including the method described in European Patent Application No. 22196903.3, which is incorporated herein by reference in its entirety.

[0035]

[0046] The position of donor die 210C can be adjusted to correspond to an intended position. That is, the actual position of donor die 210C can be adjusted to correspond to an intended position, which can be predetermined based on, for example, the dimensions of recess 216C. The position of donor die 210C can be adjusted to correspond to a target location, such as a location where donor die 210C is to be attached. The target location can be, for example, based on a theoretical target (e.g., a target design), obtained from storage, for example, obtained by measurement based on a fabricated target, etc. Adjusting the position of donor die 210C to correspond to the target location can differ from adjusting the position of donor die 210C to correspond to an intended location. For example, the intended location of donor die 210C can be the center of recess 216C. However, if measurements of the target location (e.g., where donor die 210C should be placed) indicate that the target location is offset, for example, in the x-direction, adjustments to the position of donor die 210C to correspond to the target location can be considered in the x-direction (e.g., offset by a complementary amount). That is, the intended location can be a location that is not informed by information about the specific target location (e.g., is the same for all dies regardless of the corresponding target), or can be further informed by information about the specific target location.

[0036]

[0047] Once the position of donor die 210C within recess 216C is adjusted, support stage 202 may move (e.g., in direction 206) so that donor die 210C occupies the position of donor die 210D, and so that recess 216C—which may be a fourth position of support stage 202—occupies the position of recess 216D. Henceforth, the fourth position of the support structure will be described with reference to donor die 210D and recess 216D. It should be understood that donor die 210D and recess 216D may be donor die 210A and recess 216A after movement of the support structure from a first position to a fourth position, donor die 210B and recess 216B after movement of the support structure from a second position to a fourth position, or, similarly, donor die 210C and recess 216C after movement of the support structure from a third position to a fourth position.

[0037]

[0048] For example, the fourth position, corresponding to the position shown for donor die 210D, may correspond to placement of a die (e.g., donor die 210D in recess 216D of support stage 202) onto a corresponding target—e.g., target die 220B. Target die 220B may be one of a set of target dies 220A-220B that may be sequentially contacted by a donor die (e.g., donor dies 210A-210E) during various movements of support stage 202. Target die 220A-220B may be the same as or different from donor dies 210A-210E. For example, target dies 220A-220B may be of the same or different circuitry type or orientation (i.e., of the same node, logic vs. memory, etc.) as donor dies 210A-210E. Target dies 220A-220B may be of the same or different dimensions as donor dies 210A-210E. That is, donor die 210E can be of the same, larger, or smaller dimensions in the yz-plane as target die 220A. Similarly, donor die 210E can be of the same, larger, or smaller thickness in the x-direction as target die 220A. Although target dies 220A-220C are shown as the same type of target die, they may instead be different types of dies.

[0038]

[0049] The target dies 220A-220C are supported by a support structure 250, with each of the target dies 220A-220C residing within a recess. The target dies 220A-220C may alternatively reside on a non-recessed support structure. In one embodiment, the target dies 220A-220C may not be dies (i.e., may not be diced). The target dies 220A-220C may instead be, for example, target locations within an undiced wafer (which may or may not correspond to areas that are later intended to become dies).

[0039]

[0050] Donor die 210D can be positioned on target die 220B by movement of support stage 202 toward target die 220B. Alternatively, or additionally, support structure 250 can also be a movable structure operable to bring donor die 210D and target die 220B into contact. As donor die 210D and target die 220B approach each other, donor die 210D and target die 220B can experience self-alignment. For example, donor die 210D and target die 220B can be electrically biased such that an electrically active area of ​​donor die 210D (e.g., electrically active area 106 in FIGS. 1A-1C ) aligns with an electrically active area of ​​target die 220B (e.g., electrically active area 108 in FIGS. 1A-1C ) via electrical attractive and repulsive forces.

[0040]

[0051] Once donor die 210D is positioned on target die 220B, support stage 202 and support structure 250 can operate (individually or in concert) to position additional donor dies on additional target dies. For example, support structure 250 can move in the negative z direction, thereby bringing target die 220C closer to support stage 202 and positioning a donor die (e.g., donor die 210C after rotation of support stage 202) on target die 220C. The relative movement of support stage 202 and support structure 250 can occur in any suitable direction. Although the direction of gravity is not shown, the positioning of donor die 210D on target die 220B can experience gravitational effects. For example, the positioning of donor die 210D on target die 220B can be aided by gravity (e.g., occurring in the direction of gravity) or retarded by gravity (e.g., occurring against the direction of gravity). Gravitational effects can be balanced by die clamps, suction, vacuum, and other forces.

[0041]

[0052] FIG. 3 is a schematic diagram illustrating a heterogeneous die stack arrangement method. For ease of explanation, FIG. 3 is described with reference to a “donor die” and a “target die.” Such descriptors herein are relative descriptors; a donor die may alternatively be a target die, and vice versa; both a donor die and a target die may alternatively be considered “donor die.” FIG. 3 is a cross-sectional view of the arrangement of donor dies 310A-310F supported by a first support stage 302 on target dies 360A-360D on a second support stage 350. The first support stage 302 is substantially hexagonal in the x-z plane and has a longitudinal axis 304 along the y-direction. The first support stage 302 may alternatively have a different cross-sectional shape, such as round, square, hexagonal, etc. The second support stage 350 is substantially circular in the x-z plane and has a longitudinal axis 354 along the y-direction. The second support stage 350 may alternatively have a different cross-sectional shape, such as a square, hexagon, etc. The second support stage 350 may have a symmetrical cross-section (e.g., as shown) having one or more axes of symmetry, or an asymmetrical cross-sectional area (e.g., an irregular polygon). The first support stage 302 may have the same (not shown) or different cross-sectional area, length (e.g., in the y-direction) as the second support stage 350, or may be different (e.g., as shown).

[0042]

[0053] First support stage 302 has recesses 316A-316F, while second support stage 350 has recesses 366A-366D. Recesses 316A-316F can have the same or different recess dimensions (e.g., recess width, recess depth, recess length) as described with reference to recesses 216A-216D in FIG. 2 . Similarly, recesses 366A-366D can have the same or different recess dimensions (e.g., recess width, recess depth, recess length) as described above. Recesses 316A-316F can have the same or different dimensions as recesses 366A-366D. Recesses 316A-316F and recesses 366A-366D can correspond to a single die (e.g., donor die 310A-310F or one of target die 360A-360D, respectively). In one embodiment, recesses 316A-316F or recesses 360A-360D can have multiple dimensions (e.g., recess widths, recess depths, recess lengths), e.g., to accommodate multiple dies. For example, recess 316A can have a first recess depth, first recess width, or first recess length corresponding to a first donor die, and a second recess depth, second recess width, or second recess length corresponding to a second donor die—i.e., recess 316A can support multiple dies having the same or different dimensions.

[0043]

[0054] The arrangement of recesses 316A-316F may be symmetrical or asymmetrical. The arrangement of recesses 366A-366D may be symmetrical or asymmetrical. The separation of recesses 316A-316F (e.g., in angle, in distance along the outer radius of the cross-sectional area) and the separation of recesses 360A-360D may be the same or different.

[0044]

[0055] First support stage 302 can be controllably moved in direction 306 about longitudinal axis 304. Second support stage 350 can be controllably moved in direction 356 about longitudinal axis 354. Directions 306 and 356 are provided by way of example, as previously described with reference to direction 206 in FIG. 2 . First support stage 302 and second support stage 350 can move in any suitable direction and at any suitable speed (e.g., continuously or intermittently), as described above. First support stage 302 and second support stage 350 can move in the same direction, in different directions, at the same speed, at different speeds, etc.

[0045]

[0056] Based on the exemplary positions and actions described above in Figure 2, exemplary positions and actions will now be further described with reference to Figure 3. These positions and actions are provided merely as examples; multiple actions may be performed at a single position, a position may not correspond to an action (e.g., may correspond to a null action), an action may be performed at multiple positions (e.g., an action may be performed multiple times or in steps separated between positions), etc. Although these positions and actions are described as occurring at discrete positions (e.g., when the movement of the first support stage 302 and the second support stage 350 is substantially zero), the positions may instead correspond to continuous (or quasi-continuous) movement, or the actions may occur while the first support stage 302 or the second support stage 350 is moving in one or more directions (e.g., while rotating, translating, etc.).

[0046]

[0057] For example, a first position of first support stage 302, corresponding to the position shown for donor die 310A, may correspond to placement of the die within a recess of first support stage 302 (e.g., donor die 310A within recess 316A by pick-and-place elements 330A). For example, a first position of second support stage 350, corresponding to the position shown for target die 360A, may correspond to placement of the die within a recess of second support stage 350 (e.g., target die 360A within recess 366A by pick-and-place elements 330B). Placing the die within a recess may be performed by any suitable method, such as that described with reference to FIG. 2.

[0047]

[0058] For example, a second position of first support stage 302, corresponding to the position shown for donor die 310B, may correspond to measuring the position of the die within the recess of first support stage 302 (e.g., of donor die 310B within recess 316B by location measurement element 340A). For example, a second position of second support stage 350, corresponding to a position for target die 360B, may correspond to measuring the position of the die within the recess of second support stage 350 (e.g., of target die 360B within recess 366B by location measurement element 340C). Measuring the die within the recess may be performed by any suitable method, such as that described with reference to FIG.

[0048]

[0059] For example, the third position of first support stage 302, which corresponds to the position shown for donor die 310C, may correspond to adjusting the position of the die within the recess of first support stage 302 (e.g., of donor die 310C within recess 316C). For example, the third position of second support stage 350, which corresponds to the position shown for target die 360C, may correspond to adjusting the position of the die within the recess of second support stage 350 (e.g., of target die 360C within recess 366C). Adjustment of the die within the recess may be performed by any suitable method, for example, by use of a die actuator, as described with reference to FIG.

[0049]

[0060] For example, the fourth position of first support stage 302, corresponding to the position shown for donor die 310D, may correspond to measuring the position of the die within the recess of first support stage 302 (e.g., of donor die 310D within recess 316D by location measurement element 340C). One or more additional measurements of the position of the die within the recess may be made, for example, for use in iterative or incremental position adjustment. Location measurement element 340C may be the same as or different from location measurement element 340A. Location measurement element 340C may acquire the same or different position information as location measurement element 340A. For example, location measurement element 340A may acquire position information (e.g., actual position) of the die (e.g., of die 310B within recess 316B) in an out-of-plane direction (e.g., perpendicular to the longitudinal plane of recess 316B). The location measurement element 340C may then acquire position information (e.g., actual position) of the die (e.g., of the die 310D within the recess 316D) in an in-plane direction (e.g., within the longitudinal plane of the recess 316D). In another example, the location measurement element 340A may acquire coarse position information (e.g., actual position) of the die (e.g., of the die 310B within the recess 316B), while the location measurement element 340C may acquire fine position information (e.g., actual position) of the die (e.g., of the die 310D within the recess 316D). In yet another example, the location measurement element 340A may acquire the same position information (e.g., actual position) of the die (e.g., of the die 310D within the recess 316D) as the location measurement element 340C acquires, such as the position information (e.g., actual position) of the die (e.g., of the die 310D within the recess 316D). Measurement of the die in the recess may be performed by any suitable method, such as that described with reference to FIG.

[0050]

[0061] For example, the fifth position of the first support stage 302, which corresponds to the position shown for the donor die 310E, may correspond to an adjustment of the position of the die within the recess of the first support stage 302 (e.g., of the donor die 310E within the recess 316E). One or more additional adjustments of the position of the die within the recess may be made, for example, in iterative or incremental position adjustments. The adjustment made at the fifth position may be the same as or different from the adjustment made at the second position described above. For example, the adjustment made at the fifth position may be made by operation of a die actuator, which may be the same or a different die actuator used to perform the adjustment made at the second position. The die actuator operated at the third position (e.g., for adjustment of the die 310C within the recess 316C) and the die actuator operated at the fifth position (e.g., for adjustment of the die 310E within the recess 316E) may correspond to the same or different components of a die actuator (e.g., an overall die actuator encompassing multiple subunits).

[0051]

[0062] The adjustment made at the fifth position can be made based on the same or different position information, such as the actual position acquired at the fourth position or the actual position acquired at the second position (as shown). In another example, location measurement element 340A can acquire position information (e.g., actual position) of a die (e.g., die 310B in recess 316B) in an out-of-plane direction (e.g., perpendicular to the longitudinal plane of recess 316B), and the die (e.g., die 310C in recess 316C) can be adjusted in the out-of-plane direction at the second position. Location measurement element 340C can then acquire position information (e.g., actual position) of a die (e.g., donor die 310D in recess 316D) in an in-plane direction (e.g., in the longitudinal plane of recess 316D), and the die (e.g., donor die 310E in recess 316E) can be adjusted in the in-plane direction at the fifth position. In yet another example, location measurement element 340A may acquire rough position information (e.g., actual position) of a die (e.g., die 310B in recess 316B), and the die (e.g., die 310C in recess 316C) may be adjusted based on the rough position information, while location measurement element 340C may acquire fine position information (e.g., actual position) of a die (e.g., die 310D in recess 316D), and the die (e.g., die 310E in recess 316E) may be adjusted based on the fine position information. In one example, location measurement element 340A may acquire position information (e.g., actual position) of the same die type (e.g., die 310B in recess 316B) as location measurement element 340C acquires, such as position information (e.g., actual position) of a die (e.g., die 310D in recess 316D), whose position (e.g., die 310C in recess 316C or die 310E in recess 316E) may be iteratively adjusted. Adjustment of the die in the recess may be performed by any suitable method, such as those described with reference to FIG. 2 or with respect to the second position of first support stage 302.

[0052]

[0063] Although the fourth and fifth positions are shown with respect to the first support stage 302, multiple die measurement and adjustment operations may be performed (e.g., at discrete locations) for any of the dies and support stages described herein. Multiple measurement and adjustment operations may be performed at the specific locations shown, for example, for the first support stage 302. Additional measurement and adjustment operations may also be performed at a given location. Additional measurement and adjustment operations may, of course, be performed as needed (e.g., if a measurement indicates that the actual position of the die is outside a threshold), etc. Additional measurement and adjustment operations may be performed at the same location, for example, by moving or returning the die to a previous measurement or adjustment location. For example, the second support stage may operate in reverse (e.g., rotate in a direction opposite to direction 356) to return one or more dies to location measurement element 340B for additional measurements.

[0053]

[0064] For example, the sixth position of the first support stage 302, which corresponds to the position shown for donor die 310F, may correspond to placing a die of the first support stage 302 (e.g., donor die 310F in recess 316F) onto a corresponding target die (e.g., target die 360D in recess 366D of the second support stage 350). For example, the fourth position of the second support stage 350, which corresponds to the position shown for target die 360D, may correspond to placing or bonding a die (e.g., target die 360D in recess 366D of the second support stage 350) onto a corresponding donor die (e.g., donor die 310F in recess 316F of the first support stage 302). The placing of the dies onto each other may be performed by any suitable method as described with reference to FIG. The placement of the dies relative to each other may be supported by either the first support stage 302 or the second support stage 350 - for example, the bonded dies may be supported by either the first support stage 302, the second support stage 350, or may be released from both the first support stage 302 and the second support stage 350 (not shown). The bonded dies may be supported by recesses in the support stages and may be removed from the support stages at additional locations (not shown). Die bonding may include a self-alignment operation. Die bonding may include an annealing operation. Die bonding may include electrical operations, including electrical testing.

[0054]

[0065] FIG. 4 is a flowchart illustrating a die placement method. Each of these operations is described in detail below. The operations of method 400 presented below are intended to be exemplary. In some embodiments, method 400 may be achieved with one or more additional operations not described and / or without one or more of the described operations. Additionally, the order in which the operations of method 400 are shown in FIG. 4 and described below is not intended to be limiting. In some embodiments, one or more portions of method 400 may be implemented (e.g., by simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that perform some or all of the operations of method 400 in accordance with instructions electronically stored on an electronic storage medium. The one or more processing devices may include, for example, one or more devices configured through hardware, firmware, and / or software to be specifically designed to perform one or more of the operations of method 400.

[0055]

[0066] In operation 420, multiple donor die locations are obtained. The donor die locations may be obtained through measurement of one or more positions of the donor die along one or more dimensions. The multiple donor die locations may be measured in-plane (e.g., in the x-y plane) via a first method and out-of-plane (e.g., in the Z direction) via a second method. For example, the multiple donor die locations may be measured in-plane based on one or more images. The multiple donor die locations may be obtained from two-dimensional images, which may indicate the location of the donor die's edges or corners relative to positions on the support structure or die actuator. The multiple donor die locations may be obtained based on features (e.g., electrically active areas) on the exposed surface of the donor die. These donor die features may be used as alignment marks or fiducial marks. In some embodiments, alignment marks may be included as exposed features of the donor die. The alignment marks may be added specifically for die bonding or may be alignment marks corresponding to a previous fabrication step.

[0056]

[0067] Multiple donor die locations can be obtained for multiple donor dies, where the multiple donor dies are within a recess in a first stage (e.g., a support stage). The multiple donor die locations can be obtained relative to features of the recess, such as sidewalls, corners, etc. The multiple donor die locations can be obtained relative to the first stage or an origin on the first stage. The multiple donor die locations can be obtained relative to intended positions, where the intended positions can be positions where the multiple donor dies are to be placed within the recess in the first stage.

[0057]

[0068] Acquiring the multiple donor die locations may be performed at a given location of the first stage, such as a location where multiple recesses containing one or more of the multiple donor dies are accessible by a location measurement element. Acquiring the multiple donor die locations may be performed after the multiple donor dies are placed in the recesses of the first stage, for example, by a pick-and-place element. Acquiring the multiple donor die locations may be performed at a given location of the first stage to which the first stage is moved after the multiple donor dies are placed in the recesses, for example, by a pick-and-place element. Placing the multiple donor dies in the recesses may be performed at a first location of the first stage, while measuring the multiple donor die locations may be performed at a second location of the first stage. It should be understood that "first" and "second" are relative identifiers and not absolute descriptions of locations.

[0058]

[0069] In operation 430, the locations of the multiple donor dies are adjusted. Adjusted includes, for example, when the measured locations correspond to the target locations within a threshold, or when the locations are minimally or substantially not adjusted after measurement. The locations of the multiple donor dies can be adjusted by the action of a die actuator. The die actuator can adjust the position of the donor die in one or more directions. The die actuator can adjust the length, position, or angle of one or more supports (e.g., struts) that support the donor die chuck or other donor die support. The die actuator can be controlled by one or more measurement systems, such as a measurement system incorporating location measurement elements, and can be electronically controlled, for example. The die actuator can be controlled by a system, such as one or more measurement systems, that also controls pick-and-place elements. Adjusting the locations of the multiple donor dies can correspond to adjusting one or more donor die chucks. Adjusting the locations of the multiple donor dies can correspond to adjusting the locations of one or more donor die actuators. Adjusting the locations of the multiple donor dies can include, for example, repeated measurements of the multiple donor die locations as adjustments are made.

[0059]

[0070] The adjustment of the multiple donor die locations may be performed at a given position of the first stage, such as a position where the multiple recesses containing one or more of the multiple donor dies are accessible by a die actuator. The adjustment of the positions of the multiple donor die locations may be performed after the locations of the multiple donor dies are obtained, for example, by a location measurement element. The adjustment of the multiple donor die locations may be performed at a given position of the first stage to which the first stage is moved after the multiple donor dies are placed in the recesses, for example, by a pick-and-place element, and after the multiple donor die locations are measured, for example, by a location measurement element. The adjustment of the locations of the multiple donor dies in the multiple recesses may be performed at a third position of the first stage, while the measurement of the multiple donor die locations may be performed at a second position of the first stage and the placement of the multiple donor dies into the recesses may be performed at a first position of the first stage. Again, “first,” “second,” and “third” are relative descriptors.

[0060]

[0071] The adjustment of the locations of the multiple donor dies can be based on targets of the donor dies. The targets can be target locations. The targets (e.g., target locations) can be acquired. The targets can correspond to the locations of the multiple target dies. The targets can correspond to multiple locations on the target wafer. The targets can be locations (e.g., locations in three dimensions, e.g., along the X, Y, and Z axes, e.g., locations in six directions along the X, Y, and Z axes and rotation angles about those axes, etc.). The targets can be a set of locations, e.g., two or more locations of or on a target (e.g., an electrically active region, such as electrically active region 108 in FIG. 1A ) to which a region of the donor die should be bonded.

[0061]

[0072] The target may be obtained from a target pattern, e.g., from a top view of the target. The target location may be obtained from a measurement, e.g., from a measurement of a fabricated target die, target wafer, etc. The target may be obtained in any suitable coordinate system, e.g., relative to one or more alignment marks on the target wafer, on a die actuator, on a support structure, etc.

[0062]

[0073] In some embodiments, the targets can be used to inform the pick-and-place element when placing the multiple donor dies. In some embodiments, the multiple donor dies can be placed in the recesses based on the obtained multiple target locations. That is, the targets can be used to inform the pick-and-place element when placing the multiple donor dies.

[0063]

[0074] Adjusting the locations of the multiple donor dies may include adjusting the multiple donor dies to locations corresponding to the targets of the donor dies, which may not be identical to the locations of the target dies. That is, the locations corresponding to the targets may be locations that correspond to, but are not equal to, the target locations. For example, the locations corresponding to the targets of the donor dies may be locations at the limits of donor die adjustment, for example, for targets that are outside the adjustment range of the donor dies. Alternatively, if the target is outside the range of donor die adjustment, for example, if it is determined based on the target and the locations corresponding to the target that bonding would not be possible, the donor dies may not be placed on the locations corresponding to the targets. The locations corresponding to the targets may be approximations of the target locations, for example, within measurement accuracy. The locations corresponding to the targets may be intermediate locations (e.g., during iterative adjustment of the locations of the multiple donor dies), placement locations (e.g., locations between the locations of the multiple donor dies and the target locations), etc.

[0064]

[0075] For example, multiple donor dies and one or more targets can be used to determine placement locations, such as placement locations for each of the multiple donor dies and corresponding targets, at which both the donor die and the corresponding target can be adjusted. The donor die locations and the target die locations can be obtained (e.g., measured), and a placement location can be determined, where the placement location is a location at which both the donor die and the target can be adjusted. For example, if the donor die is offset (e.g., from the recess) by 4 μm in a first direction (e.g., from its intended position) and the target die is offset (e.g., from the recess) by 1 μm in an anti-parallel direction, both the donor die and the target die can be adjusted to meet at the placement location (at which placement of the donor die on the target can occur). For a specific example, the donor die can be adjusted 2.5 μm anti-parallel to the offset for a final offset of 1.5 μm in the first direction, while the target can be adjusted 2.5 μm anti-parallel to the offset for a final offset of 1.5 μm in the first direction. The placement location can be determined based on the location of the donor die, the location of the target, the adjustment range available to the donor die, the adjustment range available to the target, etc. The placement location can be symmetric (e.g., equidistant between the donor die location and the target location) or asymmetric (e.g., closer to one of the donor die location or the target location). The placement location can be symmetric in one direction and asymmetric in another. For example, the donor die location can be adjusted in an out-of-plane direction, while the target location is not adjusted in the out-of-plane direction, but both the donor die location and the target location can be adjusted in-plane.

[0065]

[0076] In operation 440, multiple donor dies are positioned on one or more targets. The donor dies can be positioned on the target by movement of one or more support stages, such as a first support stage containing multiple recesses, a second support stage corresponding to the target, etc. The donor dies can experience self-alignment when the donor dies are brought into contact with the target. For example, the donor dies can be biased relative to the target location such that an electrically active region of the donor die is attracted to a particular region, such as an electrically attractive region, of the target location. Multiple donor dies can be attached to multiple target locations. Multiple donor dies can be bonded to multiple target locations, for example, by annealing. Multiple donor dies can be released from multiple die actuators or from the support structure.

[0066]

[0077] The placement of the multiple donor dies on the target may be performed at a given position of the first stage, such as a position where multiple recesses containing one or more of the multiple donor dies are aligned with the target. The placement of the multiple donor dies on the target may be performed after adjusting the locations of the multiple donor dies. The placement of the multiple donor dies on the target may be performed at a given position of the first stage to which the first stage is moved after the multiple donor dies are placed in the recesses, for example, by a pick-and-place element, after the multiple donor die locations are measured, for example, by a location measurement element, and after the locations of the multiple donor dies are adjusted, for example, by a die actuator. The placement of the multiple donor dies on the target may be performed at a fourth position of the first stage, while the adjustment of the locations of the multiple donor dies may be performed at a third position of the first stage, the measurement of the locations of the multiple donor dies may be performed at a second position of the first stage, and the placement of the multiple donor dies into the recesses may be performed at a first position of the first stage. Here again, "first," "second," "third," and "fourth" are relative descriptors.

[0067]

[0078] In some embodiments, additional sets of donor dies may be placed on the targets. For example, if the targets correspond to targets for target wafers, targets acquired for one of the target wafers may be applied to additional target wafers having the same manufacturing parameters. In another example, if multiple dies are to be stacked, targets for a second layer stack may be acquired as the first layer stack is performed—for example, the donor die locations for the first layer stack may be used as targets for the second layer stack.

[0068]

[0079] As mentioned above, the method 400 (and / or other methods and systems described herein) is configured for alignment of multiple dies.

[0069]

[0080] 5A-5B are schematic diagrams illustrating how a die is placed into a recess in a movable stage. FIG. 5A shows a cross-sectional view of the placement of a die 510 into a recess 516 on a support stage 502. The die 510 can be a donor die or a target die. In one embodiment, both the donor die and the target die can be placed into recesses in a corresponding movable stage, such as the support stage 502. For ease of illustration, a substantially planar surface of the support stage 502 is shown. It should be understood that recess 516 in FIG. 5A may correspond to recesses located along a longitudinal surface of support stage 502 (e.g., corresponding to recess 216A or donor die 210A in support stage 202 in FIG. 2 , corresponding to target dies 220A-220C and corresponding recesses in support structure 250 in FIG. 2 , corresponding to recess 316A or donor die 310A in first support stage 302 in FIG. 3 , or corresponding to recess 366A or target die 360A in second support stage 350 in FIG. 3 ). Recess 516 in FIG. 5B may correspond to recesses located along multiple longitudinal dimensions of support stage 502 (e.g., corresponding to donor dies 210A-210C along the y and z directions in FIG. 2 ). While multiple operations may be shown to be occurring, these may be occurring at different times or positions on support stage 502. Although a frame of reference relative to die 510 has been chosen for purposes of explanation, motion may also be performed relative to support stage 502, a target (not shown), or the like.

[0070]

[0081] The die 510 may be any die suitable for heterogeneous (or homogeneous) integration. The donor die 510 may be supported by a die actuator within the recess 516. The die 510 may be placed within the recess 516 by the pick-and-place element 230 (e.g., described with reference to FIG. 2 ), or alternatively, by another pick-and-place element or another method. The die 510 may consist of die (e.g., donor die or target die) from a single wafer, from multiple wafers of the same type, or from wafers of different types. The dies 510 may have substantially the same dimensions or different dimensions, such as die height, die width, or die length. The dies 510 may be planarized. The dies 510 may each be supported by one or more die actuators. In some embodiments, multiple dies 510 may each be supported within a single recess 516 or by one of the die actuators. In some embodiments, some of the recesses 516 may be empty or otherwise not correspond to one of the dies 510. The die 510 may be smaller in size than the recess. The recess may have the same or different recess dimensions, such as recess depth, recess width, and recess length. The die 510 may be secured within the recess 516 electrostatically or otherwise.

[0071]

[0082] The pick-and-place elements 230 can place the die 510 in the recesses 516 at the intended positions. The intended positions can be the same or different for each of the recesses 516. For example, the pick-and-place elements 230 can be rotated relative to the support stage 502 (e.g., with a periodicity P in the Y direction). Y and periodicity P in the X direction X In another example, pick-and-place element 230 may attempt to place die 510 in recess 516 with respect to its intended location (as given by ). In another example, pick-and-place element 230 may attempt to place die 510 in recess 516 with respect to the location of recess 516 itself. Pick-and-place element 230 may or may not attempt to compensate for irregularities in the placement of recess 516 when placing die 510.

[0072]

[0083] Also shown is a location measurement element 240, which may be the same as the location measurement element 240 described with respect to FIG. 2 . The location measurement element 240 may be a camera, such as a two-dimensional camera, two or more one-dimensional cameras, an optical camera, or another measurement device. The location measurement element 240 may be composed of multiple location measurement elements, such as an in-plane measurement device that can measure location in the xy plane and an out-of-plane measurement device that can measure location or distance in the Z direction. The location measurement element 240 may include one or more confocal microscopes that can measure depth. The location measurement element may measure position, relative or absolute position, using overlay diffraction or other diffraction-based methods. The location measurement element 240 may operate in a scanning mode or from a fixed position relative to the support stage 502.

[0073]

[0084] FIG. 5B shows a plan view of die 510 within recess 516 on support stage 502. The position of die 510 may be described with reference to one or more origins. For ease of explanation, the position of die 510 is referred to herein as the periodicity P X and periodicity P Y The positions of the dies 510 are described with reference to their intended positions (as given by Δx and θx, and Δz). The position of each of the dies 510 can be described in free space by six coordinates—Δx and θx along the x-axis, Δy and θy along the y-axis, and Δz and θz along the z-axis (as shown in FIG. 5A). The angles θi (where i can be x, y, or z) correspond to the rotation angle of the die 510 about the corresponding axis. The angles θz and θy need not be complementary because out-of-plane rotation (e.g., along θz) may exist. The position of the die 510 may be limited by the precision and repeatability of the pick-and-place elements 230, the location of the recesses 516, and by the regularity of the support stage 502.

[0074]

[0085] 6A-6B are schematic diagrams illustrating a method for adjusting the placement of a die within a recess of a movable stage. FIG. 6A shows a cross-sectional view of the placement of die 510 within recess 516 on support stage 502 after adjusting the location of die 510. Die 510 may be a donor die or a target die (e.g., corresponding to recess 216C or die 210C in support stage 202 of FIG. 2; corresponding to target dies 220A-220C and corresponding recesses in support structure 250 of FIG. 2; corresponding to recess 316C or donor die 310C in first support stage 302 of FIG. 3; corresponding to recess 316E or donor die 310E in first support stage 302 of FIG. 3; or corresponding to target die 360C or recess 366C in second support stage 350 of FIG. 3). Die 510 may be adjusted (e.g., in position) by any suitable action, for example, by a die actuator. The die adjustment will be further described with respect to a "die adjustment element," which may be a die actuator, may be an external element such as a pick-and-place element, etc.

[0075]

[0086] The die adjustment element may operate in conjunction with the location measurement element 240 (of FIG. 5A ). The die adjustment element may incrementally (or iteratively) adjust the position of the die 510 based on or in response to position information acquired by the location measurement element 240 (of FIG. 5A ). The die adjustment element may also, or instead, adjust the position of the die 510 based on target position information (e.g., target die position, target wafer information). The die adjustment element may attempt to move the die 510 to an intended position (e.g., to compensate for errors in the position of the recess 516, target, etc.). In some embodiments, the die adjustment element may operate in conjunction with a target die adjustment element to align the die 510 with a target die at a location that may not be the intended location. The die adjustment element may align the die 510 with or without reference to its position on the support stage 502. The die adjustment element may additionally or alternatively adjust the position of the die adjustment element (e.g., a die actuator) itself in one or more directions.

[0076]

[0087] FIG. 6B shows a plan view of the die 510 positioned within the recess 516 of the support stage 502 after alignment. The position of the die 510 can be described with reference to one or more origins. The position of each die 510 can be described in free space by six coordinates—Δx and θx along the x-axis (where θx indicates parallelism with the x-axis), Δy and θy along the y-axis (where θy indicates parallelism with the y-axis), and Δz and θz along the z-axis (as shown in FIG. 6A ), where θz indicates parallelism between the x- and y-longitudinal planes of the die 510 and the support stage 502. The position of the die 510 may be limited by the precision and repeatability of the die alignment elements, the extent of the recess 516, etc., and may still include a placement error that may be smaller than the placement error possible when using pick-and-place elements.

[0077]

[0088] 7A-7C are schematic diagrams illustrating a method for placing a donor die on a target using a recess in a movable stage. It should be understood that the descriptors "donor" and "target" are relative, and that a target article may alternatively be placed on a donor article. FIGS. 7A and 7C are cross-sectional views of various steps of die placement, while FIG. 7B is a plan view of a die placement step. FIG. 7A illustrates placement of donor die 710 in recess 716 over target dies 760A and 760B within recess 766 by bringing support stage 702 (having recess 716) and support stage 750 (having recess 766) into close proximity. Recess 766 is shown to have multiple recess depths, including a first recess depth corresponding to target die 760A and a second (deeper) recess depth corresponding to target die 760B. The difference between the first and second recess depths is labeled Δz 762. Recess 716 and recess 766 may have dimensions corresponding to one or more dies, although such dimensions may vary (e.g., a recess may have a portion corresponding to a first die that is deeper, wider, longer, etc. than a portion corresponding to a second die). Recess 716 and recess 766 may instead be multiple recesses, such as separate recesses, adjacent recesses, non-bonding recesses, contiguous recesses, etc.

[0078]

[0089] In FIG. 7A , support stage 702 is shown approaching support stage 750. However, the direction of approach is relative, and support stage 750 may alternatively or additionally approach support stage 702. In FIG. 7A , support stage 702 is shown rotated (e.g., flipped about the y-axis) relative to the depiction of support stage 502 in FIGS. 5A and 6A to complement the position of support stage 750. However, either or both of support stage 702 and support stage 750 may be rotated or translated—e.g., based on the positions shown in FIGS. 2-3—before approach. Support stage 702 may be aligned with support stage 750 (e.g., in the X direction, in the Y direction, in the Z direction, rotationally, etc.) based on alignment marks (not shown), such as alignment marks corresponding to support stage 702, support stage 750, recess 716, recess 766, donor die 710, target die 760A, or target die 760B.

[0079]

[0090] Donor die 710 may undergo self-alignment with target die 760A or target die 760B. Donor die 710 and target dies 760A and 760B may undergo self-alignment due to the application of a charge (e.g., a voltage), for example, supplied by voltage element 730. The voltage element may provide a voltage that oppositely charges corresponding elements of charge donor die 710 and target dies 760A and 760B. The corresponding elements may be electrically active areas, such as electrically active areas 106 and 108 in FIGS. 1A-1C. The corresponding elements may be elements of the circuitry of donor die 710 or target dies 760A and 760B. For example, the corresponding elements may be TSVs to which they are to be connected. The corresponding elements may be elements that are not part of the circuitry itself, such as metal pads on the die edge or top layer features (e.g., sacrificial features) that are not integral to the die's circuitry. Self-alignment of donor die 710 and target dies 760A and 760B can be facilitated by one or more dynamic (e.g., sliding) stages. The dynamic stages can be incorporated within one or more die actuators. The dynamic stages can be composed of one or more rolling, bending, or otherwise variable elements, such as dynamic elements 720, 722, and 724. The dynamic stages can be incorporated within other die attachment elements, such as die chucks or electrostatic clamps. The dynamic stages can be between the die chuck and the die, or between the die chuck and the surface of recess 716. The dynamic stages can support donor die 720 or target die 760A or 760B.

[0080]

[0091] FIG. 7B is a plan view of the placement of donor die 710 over target dies 760A and 760B. In FIG. 7B, one of the donor dies 710 is shown as solid black, corresponding to the placement of donor die 710 over target dies 760A and 760B in the z-direction. The other donor dies 710 are shown as transparent rectangles, indicating the alignment of donor die 710 with target dies 760A and 760B in the z-direction. Donor die 710 may be larger or smaller than target dies 760A and 760B in any dimension. For example, donor die 710 is shown as having the same width as target die 760A but a larger width than target die 760B. Similarly, if donor die 710 or the target is composed of multiple dies (such as target dies 760A and 760B), the multiple dies may have different or the same dimensions. For example, target die 760A is shown to have a smaller depth than target die 760B (in FIG. 7A) and a larger width than target die 760B.

[0081]

[0092] Alignment between donor die 710 and target dies 760A and 760B can be accurate to 200 nm or better. Alignment between donor die 710 and target dies 760A and 760B when supported by recess 716 or recess 766 can be more accurate than can be achieved by pick-and-place alone. Placement of donor die 710 onto target dies 760A and 760B when supported by recess 716 and recess 766 can additionally (or alternatively) be faster than placement by a die bonder. The placement of donor die 710 over target die 760A and 760B when supported by recesses 716 and 766 may provide die placement for various dies that are not the entire wafer, for example, for diced wafers that cannot be placed, aligned, or bonded by a wafer bonder, which may require that donor die 710 and target die (e.g., either target die 760A or target die 760B) have the same dimensions (e.g., which may be most useful for homogeneous integration).

[0082]

[0093] 7C illustrates removal of support stage 702 and support stage 750 after donor die 710 has been attached to target dies 760A and 760B. Contact of donor die 710 with target dies 760A and 760B may include adhesion (e.g., electrostatic adhesion, van der Waals attraction, etc.) or annealing of target dies 760A and 760B to donor die 710. After donor die 710 has been attached to target dies 760A and 760B, donor die 710 may be released from recess 716 of support stage 702, for example, electrostatically. Release may include active disengagement, for example, electrostatic repulsion between recess 716 and donor die 710. After donor die 710 has been released from recess 716, support stage 702 may be moved to separate recess 716 and donor die 710. Removal of support stage 702 may occur along the Z direction, but may alternatively or additionally occur in another direction. In some embodiments, removal of support stage 702 may include dismantling or disassembling support stage 702.

[0083]

[0094] Donor die 710 and target dies 760A and 760B (which may be connected to donor die 710) may be supported by support stage 750. As described with reference to the release of donor die 710 from recess 716 and support stage 702, target dies 760A and 760B may be actively or passively released from recess 766 and support stage 750. Once released, donor die 710 and target dies 760A and 760B may be supported by another structure (not shown), such as a collection receptacle, a chip feeder line, etc. Donor die 710 and target dies 760A and 760B may be annealed or otherwise bonded electrically, physically, chemically, etc., before or after removal of support stage 702 (or removal of support stage 750). When combined, donor die 710 and target dies 760A and 760B can function as a single unit, e.g., of circuitry. Donor die 710 and target dies 760A and 760B can be further processed, e.g., via lithography, further analyzed, e.g., via electrical testing, further diced, further integrated, e.g., with additional die (e.g., additional donor dies 710, additional target dies 760A, additional target dies 760B, additional dies of different types, etc.), packaged, etc.

[0084]

[0095] FIG. 8 is a flowchart illustrating a die alignment method. Each of these operations is described in detail below. The operations of method 800 presented below are intended to be exemplary. In some embodiments, method 800 may be achieved with one or more additional operations not described and / or without one or more of the described operations. Additionally, the order in which the operations of method 800 are shown in FIG. 8 and described below is not intended to be limiting. In some embodiments, one or more portions of method 800 may be implemented (e.g., by simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that perform some or all of the operations of method 800 in accordance with instructions electronically stored on an electronic storage medium. The one or more processing devices may include, for example, one or more devices configured through hardware, firmware, and / or software to be specifically designed to perform one or more of the operations of method 800.

[0085]

[0096] In operation 810, a donor die is placed in the recess. The donor die may be placed in the recess by a pick-and-place element, such as pick-and-place element 230 described with reference to FIG. 2. Donor die placement in the recess may be monitored, for example, by the pick-and-place element, so that if the donor die is not completely placed in the recess, the donor die may be repositioned (e.g., repositioned, discarded, etc.). The recess may be located in a movable stage. The recess may be about the size of the donor die, while also being larger than the donor die. The recess may have one or more recess widths, recess depths, recess lengths, etc. The donor die may be multiple dies, such as previously bonded dies (e.g., two or more stacked dies), or individual dies (such as those shown for target dies 760A and 760B in FIGS. 7A-7C).

[0086]

[0097] In operation 820, the donor die locations are obtained. The donor die locations may be obtained using any suitable method, including those methods described above with reference to operation 420 of Figure 4. The donor die locations may be measured or may be obtained from storage.

[0087]

[0098] A target location corresponding to the target of the donor die may also be obtained. The target may be obtained using any suitable method, including those methods described above with reference to operation 430 of FIG. 4. The target may be measured or may be obtained from storage. The target corresponding to the donor die may be identified from multiple targets.

[0088]

[0099] In some embodiments, the donor die location and the target may be acquired in reverse order—the order of operations provided herein is merely for illustration and should not be construed as limiting. In some embodiments, the intended donor die location is determined based on the target. For example, a corresponding location for the donor die (i.e., the intended donor die location) may be determined based on the difference between the ideal target and the actual target. In some embodiments, the difference between the donor die location and the intended donor die location may be determined. The difference may be determined with respect to one or more directions, for example, with respect to up to six degrees of freedom. The difference between the intended donor die location and the donor die location may be used to determine an adjustment factor with up to six degrees of freedom. Here, the adjustment factor may be a distance, a rotation angle, etc.

[0089]

[0100] In operation 830, the location of the donor die is adjusted. The location of the donor die may be adjusted by a piezoelectric or other actuator. The location of the donor die may be adjusted by applying electrical actuation (or other actuation) to one or more supports to lengthen or shorten the supports, where the supports may be supports such as die chucks, dies, recesses, etc. The location of the donor die may be adjusted by applying electrical actuation (e.g., via a piezoelectric microstepper) to the legs of one or more supports to move the base of one or more supports in one or more directions at a time. The location of the donor die may be adjusted based on the donor die location, the target, the relationship between the donor die location and the target, etc. The location of the donor die may be adjusted using any suitable method. In some embodiments, the location of the donor die may be measured (or otherwise obtained) after adjustment. The location of the donor die may be iteratively measured and adjusted (as described above with reference to FIG. 3). In some embodiments, the location of the donor die may be tracked as a function of adjustment, for example, to determine drift in one or more adjustment actuators or to improve future adjustments.

[0090]

[0101] As mentioned above, the method 800 (and / or other methods and systems described herein) is configured for die alignment.

[0091]

[0102] FIG. 9 is a schematic diagram illustrating a die location measurement method using a two-dimensional image. FIG. 9 is a plan view of a donor die 910 in a recess 916 of a support stage 902 (only a portion of which is shown). While FIG. 9 is described with respect to a donor die 910, the donor die 910 may alternatively be a target die. The locations of both the donor die 910 and the corresponding target die may be determined, for example, with respect to the relative recesses (e.g., recess 916 and the recess corresponding to the target die). The location of the donor die 910 may be determined based on a two-dimensional image of the recess 916 or of the support stage 902 including the recess 916. The location of the donor die 910 may be determined with respect to four directions in a plane, for example, with respect to a rotation angle 920 relative to the x-axis, an x-displacement 930, a rotation angle 940 relative to the y-axis, and a y-displacement 950. The x-displacement 930 and the y-displacement 950 may correspond to a minimum displacement (e.g., the offset between the axis and the closest approach of the die), a maximum displacement, a displacement between two points (e.g., between the center of the recess 916 along the axis and the center of the donor die 910 along the side corresponding to the axis), etc. The rotation angle 920 and the rotation angle 940 may correspond to a rotation angle between the axis and a one-dimensional feature of the donor die 910 (e.g., a line, a side, an edge, a linear alignment mark, etc.). The rotation angle 920 and the rotation angle 940 may also correspond to an angle given by an identification of three of more points or one-dimensional features, such as a point on the corresponding axis and a point on the donor die 910, such as a corner, a feature, an alignment mark, etc. The rotation angle 920 and the rotation angle 940, the x-displacement 930, and the y-displacement 950 may be determined based on an identification of one or more features of the donor die 910 (e.g., a corner, a side, a midpoint, an alignment mark, etc.). Rotation angle 920 and rotation angle 940, x-displacement 930, and y-displacement 950 may be determined based on identification of one or more features of recess 916 (e.g., corners, sides, midpoints, alignment marks, etc.). Rotation angle 920 and rotation angle 940, x-displacement 930, and y-displacement 950 may be determined by comparison of features of donor die 910 and recess 916. Features of recess 916 and donor die 910 may be identified by any suitable image recognition method. Features of donor die 910 may include top surface alignment marks (shown as white rectangles).The features of donor die 910 may include edge alignment marks (shown as voids), electrically active areas, or other top surface features.

[0092]

[0103] 10A-10B are schematic diagrams illustrating a die location measurement method using one-dimensional images. FIG. 10A is a plan view of a donor die 910 in a recess 916 of a support stage 902 (only a portion of which is shown). Similar to FIG. 9, FIGS. 10A-10B are described with respect to the donor die 910, which may alternatively be a target die. The locations of both the donor die 910 and the corresponding target die may be determined, for example, with respect to the associated recess (e.g., recess 916 and the recess corresponding to the target die). The location of the donor die 910 may be determined based on multiple one-dimensional images of the recess 916 or of the support stage 902 including the recess 916. The location of the donor die 910 may be determined with respect to four directions in a plane, for example, with respect to a rotation angle 920 relative to the x-axis, an x-displacement 930, a rotation angle 940 relative to the y-axis, and a y-displacement 950, as shown in FIG. 9. The location of the donor die 910 can be determined based on multiple one-dimensional images taken at known or predetermined positions relative to the donor die 910 and the recess 916. Exemplary orientations of the multiple one-dimensional images are shown, including horizontal orientations 1025A and 1025B and vertical orientations 1035A and 1035B. The horizontal orientations 1025A and 1025B are provided as examples, and it should be understood that the one or more one-dimensional images can be acquired at various angles relative to the horizontal axis, e.g., substantially horizontal, at an acute angle relative to the horizontal axis, at a positive angle relative to the horizontal axis, a negative angle relative to the horizontal axis, etc. Similarly, the vertical orientations 1035A and 1035B are provided as examples, and it should be understood that the one or more one-dimensional images can be acquired at various angles relative to the vertical axis, e.g., substantially vertical, at an acute angle relative to the vertical axis, at a positive angle relative to the vertical axis, a negative angle relative to the vertical axis, etc. Here, "horizontal," "vertical," "positive," and "negative" can be relative descriptors with respect to any suitable reference system. Horizontal directions 1025A and 1025B and vertical directions 1035A and 1035B can be intentionally angled relative to the axis (e.g., side) of recess 916 to improve the ability of the one-dimensional image to capture information regarding the offset (e.g., relative to an intended position) or rotation (e.g., relative to the side of recess 916) of donor die 910.By determining the relationship between the extent of donor die 910 and the extent of recess 916 along multiple one-dimensional directions, the position of donor die 910 can be determined.

[0093]

[0104] 10B is a plan view of a one-dimensional (or quasi-one-dimensional) image corresponding to horizontal direction 1025A. From the one-dimensional image, the distance between the extent of recess 916 and the extent of donor die 910 can be determined for each side of the donor die (e.g., y-distance 1060 and y-distance 1064). If donor die 910 is not detected in the one-dimensional image, its absence also provides information about the position of donor die 910 relative to recess 916. Donor die protrusion distance 1062 along horizontal direction 1025A can also be determined. Based on the distance along horizontal direction 1025A and the distance along at least one other direction (e.g., horizontal direction 1025B, vertical direction 1035A or 1035B, etc.), the position of donor die 910 within recess 916 can be determined. Multiple one-dimensional images can be used to better characterize the position of donor die 910, for example, to account for out-of-plane rotation and displacement.

[0094]

[0105] FIG. 11 is a flowchart illustrating a die location determination method. Each of these operations is described in detail below. The operations of method 1100 presented below are intended to be exemplary. In some embodiments, method 1100 may be achieved with one or more additional operations not described and / or without one or more of the described operations. Additionally, the order in which the operations of method 1100 are shown in FIG. 11 and described below is not intended to be limiting. In some embodiments, one or more portions of method 1100 may be implemented (e.g., by simulation, modeling, etc.) in one or more processing devices (e.g., one or more processors). The one or more processing devices may include one or more devices that perform some or all of the operations of method 1100 in accordance with instructions electronically stored on an electronic storage medium. The one or more processing devices may include, for example, one or more devices configured through hardware, firmware, and / or software to be specifically designed to perform one or more of the operations of method 1100.

[0095]

[0106] In operation 1110, an image of the donor die is acquired. The image may be a two-dimensional image. The image may be two or more one-dimensional images. The image may include out-of-plane measurements, such as measurements of distance or angle of displacement in an out-of-plane direction. The image of the donor die may be acquired by a camera. The image of the donor die may be acquired by a photodetector. The image of the donor die may be acquired in black and white, grayscale, full color, etc. The image of the donor die may be acquired by illuminating the donor die with full color light, laser light, infrared light, etc.

[0096]

[0107] In operation 1120, the image of the donor die is referenced to the corresponding recess. Alternatively, or additionally, the image of the donor die is referenced to a support structure that contains the recess. The image of the donor die may include an image of the corresponding recess or support structure. The image of the donor die may have a known relationship to the recess or support structure.

[0097]

[0108] In operation 1130, donor die features are identified in the image. The features may include donor die corners, donor die sides, and donor die top surface features. The features may include identifying alignment marks (such as on the top surface or edges of the donor die). The features may include identifying a feature's rotation angle or periodicity, e.g., the period of a top surface grating in one dimension. Recess or support structure features may also (or instead) be identified in the image. The features may include recess corners, recess sides, and recess features (such as engraved patterns). The features may include identifying recess or support structure alignment marks, or other reference features.

[0098]

[0109] In operation 1140, a relationship between the donor die feature and the corresponding recess is determined. The relationship may alternatively or additionally be determined between the donor die feature and the support structure. The relationship may be, for example, an offset in one or two dimensions, the relationship may be a range, the relationship may be a closes point, the relationship may be a vector (such as a displacement vector), the relationship may be an angle, etc. The relationship may be determined between any two suitable points, such as corners, center points, etc. The relationship may be determined relative or absolute. The relationship may be determined as a function of one or more variables (e.g., unknowns). Multiple relationships may be determined.

[0099]

[0110] In operation 1150, the position of the donor die may be determined based on one or more relationships between the features of the donor die and the recesses, or between the donor die and the support structures. If the relationship does not result in an absolute position, another relationship may be determined, such as a relationship that instead provides a geometric relationship with two variables. Multiple relationships may be used to determine the absolute position of the donor die relative to the corresponding recesses or support structures.

[0100]

[0111] As mentioned above, the method 1100 (and / or other methods and systems described herein) is configured for die alignment.

[0101]

[0112] 12 is a diagram of an exemplary computer system CS that may be used for one or more of the operations described herein. The computer system CS includes a bus BS or other communication mechanism for communicating information and a processor PRO (or multiple processors) coupled to the bus BS for processing information. The computer system CS also includes a main memory MM, such as a random-access memory (RAM) or other dynamic storage device, coupled to the bus BS for storing information and instructions to be executed by the processor PRO. The main memory MM may also be used to store temporary variables or other intermediate information during execution of instructions by the processor PRO. The computer system CS further includes a read-only memory (ROM) ROM or other static storage device coupled to the bus BS for storing static information and instructions for the processor PRO. A storage device SD, such as a magnetic or optical disk, is provided and coupled to the bus BS for storing information and instructions.

[0102]

[0113] The computer system CS may be coupled to a display DS, such as a cathode ray tube (CRT) or flat-panel or touch-panel display, via a bus BS for displaying information to a computer user. Input devices ID, including alphanumeric and other keys, are coupled to the bus BS for communicating information and command selections to the processor PRO. Another type of user input device is a cursor control CC, such as a mouse, trackball, or cursor direction keys, for communicating directional information and command selections to the processor PRO and for controlling cursor movement on the display DS. This input device typically has two degrees of freedom in two axes, a first axis (e.g., x) and a second axis (e.g., y), that allow the device to specify a position in a plane. Touch-panel (screen) displays may also be used as input devices.

[0103]

[0114] In some embodiments, portions of one or more methods described herein may be performed by computer system CS in response to processor PRO executing one or more sequences of one or more instructions contained in main memory MM. Such instructions may be read into main memory MM from another computer-readable medium, such as storage device SD. Execution of the sequences of instructions contained in main memory MM causes processor PRO to perform the process steps (operations) described herein. One or more processors in a multiprocessing arrangement may also be utilized to execute the sequences of instructions contained in main memory MM. In some embodiments, hardwired circuitry may be used in place of or in combination with software instructions. Thus, the description herein is not limited to any specific combination of hardware circuitry and software.

[0104]

[0115] The terms "computer-readable medium" and / or "machine-readable medium," as used herein, refer to any medium that participates in providing instructions to a processor PRO for execution. Such media may take many forms, including, but not limited to, non-volatile media, volatile media, and transmission media. Non-volatile media include, for example, optical or magnetic disks, such as a storage device SD. Volatile media include dynamic memory, such as a main memory MM. Transmission media include coaxial cables, copper wire, and optical fibers, including the wires that comprise a bus BS. Transmission media may also take the form of acoustic or light waves, such as those generated during radio frequency (RF) and infrared (IR) data communications. The computer-readable medium may be non-transitory, such as a floppy disk, a flexible disk, a hard disk, magnetic tape, any other magnetic medium, a CD-ROM, a DVD, any other optical medium, a punched card, a paper tape, any other physical medium with a pattern of holes, a RAM, a PROM, an EPROM, a flash EPROM, or any other memory chip or cartridge. The non-transitory computer-readable medium may have instructions recorded thereon that, when executed by a computer, may perform any of the operations described herein. The transitory computer-readable medium may include, for example, a carrier wave or other propagating electromagnetic signal.

[0105]

[0116] Various forms of computer-readable media may be involved in carrying one or more sequences of one or more instructions to processor PRO for execution. For example, the instructions may initially be carried on a magnetic disk of a remote computer. The remote computer may load the instructions into its dynamic memory and send the instructions over a telephone line using a modem. A modem local to computer system CS may receive the data on the telephone line and convert the data to an infrared signal using an infrared transmitter. An infrared detector coupled to bus BS may receive the data carried in the infrared signal and place the data on bus BS. Bus BS carries the data to main memory MM, from which processor PRO retrieves and executes the instructions. The instructions received by main memory MM may optionally be stored on storage device SD either before or after execution by processor PRO.

[0106]

[0117] The computer system CS may also include a communications interface CI coupled to the bus BS. The communications interface CI provides a bidirectional data communications coupling to a network link NDL connected to a local network LAN. For example, the communications interface CI may be an integrated services digital network (ISDN) card or a modem for providing a data communications connection to a corresponding type of telephone line. As another example, the communications interface CI may be a local area network (LAN) card for providing a data communications connection to a compatible LAN. A wireless link may also be implemented. In any such implementation, the communications interface CI sends and receives electrical, electromagnetic, or optical signals that carry digital data streams representing various types of information.

[0107]

[0118] The network link NDL typically provides data communication through one or more networks to other data devices. For example, the network link NDL may provide a connection to a host computer HC through a local network LAN. This may include data communication services provided through a worldwide packet data communication network now commonly referred to as the "Internet" INT. The local network LAN (Internet) may use electrical, electromagnetic, or optical signals that carry digital data streams. The signals through the various networks, as well as the signals on the network data link NDL and through the communication interface CI, that carry digital data to and from the computer system CS, are exemplary forms of carrier waves transporting information.

[0108]

[0119] The computer system CS can send messages and receive data, including program code, through the network(s), the network data link NDL, and the communication interface CI. In the Internet example, the host computer HC could transmit requested code for an application program through the Internet INT, the network data link NDL, the local network LAN, and the communication interface CI. One such downloaded application could, for example, provide all or part of the methods described herein. The received code may be executed by the processor PRO as it is received and / or stored for later execution in the storage device SD or other non-volatile storage. In this manner, the computer system CS can obtain application code in the form of a carrier wave.

[0109]

[0120] Embodiments of the present disclosure are defined in the following numbered clauses: Clause 1: An apparatus for die placement, comprising: a first stage including a plurality of recesses, the plurality of recesses configured to receive a plurality of donor dies; a second stage including supports for one or more targets; a measurement system operatively coupled to the first stage; obtaining locations of a plurality of donor dies within a plurality of recesses of the first stage; At least based on where it was taken, providing output signals to adjust locations of a plurality of donor dies supported by the first stage to correspond to locations of one or more targets; Based at least in part on the adjusted location, providing output signals for positioning the plurality of donor dies onto one or more targets supported by the second stage by relative motion between the first stage and the second stage; a measurement system configured to: An apparatus comprising: Clause 2: an adjustable stage is disposed within the plurality of recesses, the adjustable stage configured to support a plurality of donor dies; 10. The apparatus of claim 1, wherein the measurement system is further configured to provide an output signal for adjusting the location of the plurality of donor dies using an adjustable stage that supports the plurality of donor dies. Clause 3: The apparatus of clause 2, wherein the measurement system is further configured to provide an output signal to one or more actuators for adjusting a location of one or more supports of the adjustable stage. Clause 4: The apparatus of clause 2, wherein the output signal for adjusting the location of the plurality of donor dies comprises an output signal to a piezoelectric actuator that adjusts the location of a support of an adjustable stage. Clause 5: The apparatus of clause 2, wherein the adjustable stage is adjustable with respect to at least three degrees of freedom. Clause 6: The apparatus of clause 2, wherein the adjustable stage is adjustable with respect to six degrees of freedom. Clause 7: The measurement system an imaging device configured to acquire images of the plurality of donor dies within the plurality of recesses; and a processor in communication with the imaging device and configured to determine locations of the plurality of donor dies within the plurality of recesses based on the images of the plurality of donor dies within the plurality of recesses; 10. The apparatus of claim 1, further comprising: Clause 8: the imaging device includes at least one photodetector configured to acquire a two-dimensional image of the plurality of donor dies; a processor in cooperation with the at least one photodetector; Detecting features for the plurality of donor dies in the two-dimensional image, including at least one of an edge of the donor die, a corner of the donor die, an edge of the recess, a corner of the recess, a gap between the edge of the donor die and the edge of the recess, an orientation angle of the edge of the donor die, and an orientation angle of the surface of the donor die; determining locations of the plurality of donor dies within the plurality of recesses based on the detected features; 8. The apparatus of clause 7, further configured to: Clause 9: the imaging device includes at least two photodetectors configured to acquire one-dimensional images of the plurality of donor dies; a processor in cooperation with the photodetector; Detecting features including at least one of an edge feature of the donor die, a top feature of the donor die, an edge of the recess, an orientation angle of the edge of the donor die, and an orientation angle of the top feature of the donor die; determining locations of the plurality of donor dies within the plurality of recesses based on the detected features; 8. The apparatus of clause 7, further configured to: Clause 10: The measurement system Get the location of one or more targets, providing output signals to adjust locations of the plurality of donor dies supported by the first stage to correspond to the acquired locations of the one or more targets; 10. The apparatus of claim 1, further configured to: Clause 11: An output signal for adjusting locations of a plurality of donor dies supported by the first stage to correspond to locations of one or more targets, an output signal for adjusting the locations of the plurality of donor dies supported by the first stage to correspond to the placement locations based on the obtained locations; and and an output signal for adjusting the location of one or more targets supported by the second stage to correspond to the placement location based on the location of the one or more targets; 10. The apparatus of claim 1, wherein the output signal for placing the plurality of donor dies on the one or more targets comprises an output signal for placing the plurality of donor dies on the one or more targets at a placement location. Clause 12: The measurement system 12. The apparatus of clause 11, further configured to determine a placement location based on the acquired locations of the plurality of donor dies and the locations of the one or more targets. Clause 13: Electrostatic clamps controllable by the measurement system are disposed within the plurality of recesses, the electrostatic clamps configured to hold the plurality of donor dies within the plurality of recesses; The apparatus of clause 1, wherein the measurement system is further configured to provide an output signal to release, at least in part, an electrostatic clamp that holds the multiple donor dies in the multiple recesses when the multiple donor dies are positioned on the one or more targets by relative motion between the first stage and the second stage. Clause 14: Further comprising a voltage source; The apparatus described in clause 1, wherein the measurement system is further configured to provide an output signal to the voltage source to cause alignment of the multiple donor dies with the one or more targets when the multiple donor dies are positioned on the one or more targets by relative movement between the first stage and the second stage. Clause 15: The apparatus described in Clause 14, wherein the measurement system is further configured to provide an output signal to the voltage source for providing multiple voltages to the multiple donor dies, and a given voltage among the multiple voltages is provided to a given donor die relative to the multiple donor dies, resulting in alignment of the given donor die with one or more targets. Clause 16: The apparatus described in Clause 1, further comprising a dynamic stage interposed between each of the plurality of recesses and each of the plurality of donor dies, the dynamic stage enabling at least one of translation and rotation of each of the plurality of donor dies during alignment of the plurality of donor dies and one or more targets. Clause 17: The apparatus of clause 16, wherein the dynamic stage comprises a roller. Clause 18: The apparatus of clause 1, wherein the first stage is at least one of rotatable about the longitudinal axis and translatable about the longitudinal axis. Clause 19: The apparatus of clause 1, wherein the second stage is at least one of translatable about a longitudinal plane and rotatable about a longitudinal axis. Clause 20: The apparatus of clause 1, wherein the first stage is a movable stage and the second stage is a fixed stage. Clause 21: Further comprising a pick and place tool operatively coupled to the measurement system and configured to place the donor die within the plurality of recesses; 10. The apparatus of claim 1, wherein the measurement system is further configured to provide an output signal for controlling a pick-and-place tool to place the plurality of donor dies into the plurality of recesses. Clause 22: The apparatus of clause 1, further comprising a bonding tool configured to bond the plurality of donor dies to one or more targets. Clause 23: A method for die placement, comprising: placing a plurality of donor dies into a plurality of recesses in a first stage, the first stage being in a first position relative to a second stage; measuring locations of a plurality of donor dies within the plurality of recesses; adjusting locations of the plurality of donor dies within the plurality of recesses to correspond to the plurality of target locations, the plurality of target locations corresponding to the second stage; placing a plurality of donor dies on a plurality of target locations, the first stage being at a second position relative to the second stage, the first position being different from the second position; A method comprising: Clause 24: The method of clause 23, wherein measuring the locations of the plurality of donor dies includes measuring the locations of the plurality of donor dies by optical metrology. Clause 25: The method described in Clause 23, wherein adjusting the locations of the multiple donor dies includes adjusting the locations of the multiple donor dies by adjusting an adjustable stage within the multiple recesses, the adjustable stage being configured to support the multiple donor dies within the multiple recesses. Clause 26: Placing multiple donor dies on multiple target locations applying a voltage between the plurality of donor dies and the plurality of target locations with a voltage source, the voltage configured to cause alignment of the plurality of donor dies and the plurality of target locations; and at least partially releasing an electrostatic clamping force holding the plurality of donor dies within the plurality of recesses when the first stage and the second stage approach each other; 24. The method of claim 23, comprising: Clause 27: The method of clause 26, wherein the electrostatic clamping force is released such that the multiple donor dies align with the multiple target locations due to the applied voltage. Clause 28: The method of clause 27, wherein applying a voltage includes applying a plurality of voltages between a plurality of donor dies and a plurality of target locations, a given one of the plurality of voltages being configured to cause alignment between a given one of the plurality of donor dies and a given one of the plurality of target locations. Clause 29: Adjusting a plurality of donor die locations within a plurality of recesses to correspond to a plurality of target locations; measuring multiple target locations; and adjusting locations of the plurality of donor dies to correspond to the measured plurality of target locations; 24. The method of claim 23, comprising: Clause 30: Adjusting the locations of the plurality of donor dies in the plurality of recesses to correspond to the plurality of target locations; adjusting the locations of the multiple donor dies to correspond to the multiple placement locations; adjusting the plurality of target locations to correspond to the plurality of placement locations; 24. The method of clause 23, wherein disposing the plurality of donor dies on the plurality of target locations comprises disposing the plurality of donor dies on coordinated plurality of target locations at the plurality of placement locations. Clause 31: The method of clause 30, further comprising determining a plurality of placement locations based on a plurality of donor die locations and a plurality of target locations. Clause 32: The method described in Clause 23, wherein placing multiple donor dies on multiple target locations further includes aligning the first stage with the second stage by adjusting the position of at least one of the first stage and the second stage. Clause 33: The method of clause 23, wherein measuring the locations of the multiple donor dies within the multiple recesses includes measuring the locations of the multiple donor dies within the multiple recesses while the first stage is in a third position relative to the second stage. Clause 34: The method of clause 23, wherein adjusting the locations of the plurality of donor dies within the plurality of recesses includes adjusting the locations of the plurality of donor dies while the first stage is in a fourth position relative to the second stage. Clause 35: The method of clause 23, wherein the first stage includes a plurality of sets of recesses, and when the first stage is in a first position, the first set of recesses is configured to receive a first plurality of donor dies and the second set of recesses is configured to enable optical measurement of the locations of a second plurality of donor dies. Clause 36: The method of clause 35, wherein a third set of recesses is configured to position a third plurality of donor dies on a plurality of target locations when the first stage is in the first position. Clause 37: A die placement tool configured to perform the method of any one of clauses 23 to 36.

[0110]

[0121] Although the concepts disclosed herein may be used for manufacturing using substrates such as silicon wafers, it should be understood that the concepts of the present disclosure may be used in any type of manufacturing system (e.g., one used for manufacturing on substrates other than silicon wafers).

[0111]

[0122] Additionally, combinations and subcombinations of the disclosed elements may constitute separate embodiments. For example, one or more of the operations described above may be included in separate embodiments, or they may be included together in the same embodiment.

[0112]

[0123] The above description is intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications can be made as described without departing from the scope of the claims set out below.

Claims

1. 1. An apparatus for die placement, comprising: a first stage including a plurality of recesses configured to receive a plurality of donor dies; a second stage including supports for one or more targets; a measurement system operatively coupled to the first stage, obtaining locations of the plurality of donor dies within the plurality of recesses of the first stage; providing an output signal to adjust the locations of the plurality of donor dies supported by the first stage to correspond to the locations of the one or more targets based at least on the obtained locations; providing an output signal for positioning the plurality of donor dies onto the one or more targets supported by the second stage by relative motion between the first stage and the second stage based at least in part on the adjusted locations. a measurement system configured to: An apparatus comprising:

2. an adjustable stage disposed within the plurality of recesses; the adjustable stage is configured to support the plurality of donor dies; The apparatus of claim 1 , wherein the measurement system is further configured to provide an output signal for adjusting the locations of the plurality of donor dies using the adjustable stage that supports the plurality of donor dies.

3. The apparatus of claim 2 , wherein the measurement system is further configured to provide output signals to one or more actuators for adjusting a location of one or more supports of the adjustable stage.

4. The apparatus of claim 2 , wherein the output signal for adjusting the location of the plurality of donor dies comprises an output signal to a piezoelectric actuation that adjusts the location of a support of the adjustable stage.

5. The apparatus of claim 2 , wherein the adjustable stage is adjustable with respect to six degrees of freedom.

6. the measurement system comprising: an imaging device configured to acquire images of the plurality of donor dies within the plurality of recesses; and a processor in communication with the imaging device and configured to determine the locations of the donor dies within the recesses based on the images of the donor dies within the recesses; The apparatus of claim 1 further comprising:

7. the imaging device includes at least one photodetector configured to acquire two-dimensional images of the plurality of donor dies; the processor cooperates with the at least one photodetector; Detecting features for the plurality of donor dies in the two-dimensional image, including at least one of an edge of the donor die, a corner of the donor die, an edge of a recess, a corner of a recess, a gap between the edge of the donor die and the edge of the recess, an orientation angle of the edge of the donor die, and an orientation angle of a surface of the donor die; determining the locations of the plurality of donor dies within the plurality of recesses based on the detected features; The apparatus of claim 6 further configured to:

8. the imaging device includes at least two photodetectors configured to acquire one-dimensional images of the plurality of donor dies; the processor cooperates with the photodetector; Detecting features including at least one of an edge feature of the donor die, a top feature of the donor die, an edge of the recess, an orientation angle of the edge of the donor die, and an orientation angle of the top feature of the donor die; determining the locations of the plurality of donor dies within the plurality of recesses based on the detected features; The apparatus of claim 6 further configured to:

9. the measurement system comprising: obtaining a location of the one or more targets; providing an output signal to adjust the locations of the plurality of donor dies supported by the first stage to correspond to the acquired locations of the one or more targets. The apparatus of claim 1 further configured to:

10. an output signal for adjusting the locations of the plurality of donor dies supported by the first stage to correspond to the locations of the one or more targets; an output signal for adjusting the locations of the plurality of donor dies supported by the first stage based on the obtained locations to correspond to placement locations; and an output signal for adjusting the location of the one or more targets supported by the second stage to correspond to the placement location based on the location of the one or more targets; The apparatus of claim 1 , wherein the output signals for placing the plurality of donor dies on the one or more targets comprise output signals for placing the plurality of donor dies on the one or more targets at the placement locations.

11. the measurement system comprising: determining the placement locations based on the acquired locations of the plurality of donor dies and the locations of the one or more targets; The apparatus of claim 10 further configured to:

12. Electrostatic clamps controllable by the measurement system are disposed within the plurality of recesses; the electrostatic clamp is configured to hold the plurality of donor dies within the plurality of recesses; 2. The apparatus of claim 1, wherein the measurement system is further configured to provide an output signal to release the electrostatic clamps that hold the plurality of donor dies in the plurality of recesses, at least in part, when the plurality of donor dies are positioned on the one or more targets by relative motion between the first stage and the second stage.

13. 2. The apparatus of claim 1, further comprising: a dynamic stage interposed between each of the plurality of recesses and each of the plurality of donor dies, the dynamic stage enabling at least one of translation and rotation of each of the plurality of donor dies during alignment of the plurality of donor dies and the one or more targets.

14. a pick and place tool operatively coupled to the measurement system and configured to place a donor die into the plurality of recesses; The apparatus of claim 1 , wherein the measurement system is further configured to provide an output signal for controlling the pick-and-place tool to place the plurality of donor dies into the plurality of recesses.

15. 1. A method for die placement, comprising: placing a plurality of donor dies into a plurality of recesses in a first stage, the first stage being in a first position relative to a second stage; measuring locations of the plurality of donor dies within the plurality of recesses; adjusting the locations of the donor dies within the recesses to correspond to a plurality of target locations, the plurality of target locations corresponding to a second stage; placing the plurality of donor dies on the plurality of target locations, the first stage being at a second position relative to the second stage, the first position being different from the second position; A method comprising:

Images