Dry etching process line width real-time measurement device

Abstract

The present invention relates to an apparatus for measuring line width in real time during a dry etching process, and includes a reaction chamber in which the dry etching process is performed, a mass spectrometer that measures gaseous substances in the reaction chamber during the dry etching process, and a calculation unit that calculates the line width CD based on the data measured by the mass spectrometer using the following formula: CD = {a1 × Σ [amount of film-quality etching by-products]} × {a2 × Σ [amount of oxygen by-products]} × {a3 × Σ [amount of fluorine by-products]} / {a4 × Σ [amount of etching gas]} (where a1, a2, a3, and a4 are predetermined proportionality constants)

Description

[Technical Field]

[0001] The present invention relates to an apparatus for measuring line width in real time during a dry etching process. [Background technology]

[0002] Semiconductor / display products undergo a manufacturing process that creates specific structures made up of various film materials on a substrate, and the lithography process, which is a combination of deposition, photolithography, and dry etching processes, is a very important core process in manufacturing semiconductor / display products. The dry etching process is a process in which thin films deposited on a substrate are etched into specific structures using etching gas, which determines the structure of semiconductor / display products. As the structures of semiconductor / display products become increasingly finer, the quality of the product is greatly determined by the results of the dry etching process, so the etching shape and etching line width, which are the results of the dry etching process, are measured and inspected by measuring the sample after the process.

[0003] The optical critical dimension (OCD) measurement method is the primary method for measuring the CD (Critical Dimension) and etched morphology achieved as a result of the dry etching process. In the case of so-called high aspect ratio dry etching, which cannot be measured using OCD measurement, a focused ion beam (FIB) sample pretreatment method is used to expose the etched cross section, destroying the sample so that the linewidth can be analyzed. Then, the etched linewidth and etched morphology are measured using transmission electron microscopy (TEM) or scanning electron microscopy (SEM) analysis. However, as semiconductor products continue to become finer and more precise, the aspect ratio of dry etching process structures is increasing to 20 or more. Optical measurement using OCD measurement cannot penetrate to the bottom of the etched structure, reducing the accuracy of measuring the etched structure. Consequently, the number of processes in which measurement of the sub-etched structure is impossible is steadily increasing. The alternative method of measuring etching linewidths using FIB processing followed by TEM / SEM analysis destroys the sample, rendering the product unusable, and therefore cannot be fully applied to the measurement of mass-produced semiconductor / display products. Instead, only selectively sampled samples are measured intermittently after tens or hundreds of wafers have been processed. Mass production continues without measuring the linewidth and structure of the dry etching process, posing a significant risk of potential process defects and forcing manufacturers to mass-produce semiconductor / display products. Furthermore, selectively sampled samples are discarded, and the time required for measurement, pre-processing, and the manpower, analyzers, and infrastructure costs required for analysis continue to increase, negatively impacting semiconductor / display production costs and productivity. Summary of the Invention [Problem to be solved by the invention]

[0004] The object of the present invention is to provide a real-time line width measurement device for a dry etching process that can measure line width in real time within a reaction chamber in order to overcome the limitations of conventional non-destructive analysis methods such as OCD analysis and destructive analysis methods such as FIB and SEM / TEM analysis in a dry etching process. [Means for solving the problem]

[0005] The real-time measurement device for line width during a dry etching process according to the present invention includes a reaction chamber in which a dry etching process is performed, a mass analyzer that measures gaseous substances in the reaction chamber during the dry etching process, and a calculation unit that calculates a line width CD based on data measured by the mass analyzer using the following equation:

[0006] CD = {a1 × Σ [amount of film-quality etching by-products]} × {a2 × Σ [amount of oxygen by-products]} × {a3 × Σ [amount of fluorine by-products]} / {a4 × Σ [amount of etching gas]} (where a1, a2, a3, and a4 are predetermined proportional constants)

[0007] In addition, the film-quality etching by-products may include one or more of SiF, SiF2, SiF3, SiF4, SiCl, SiCl2, SiCl3, SiCl4, SiH, SiH2, SiH3, SiH4, CF, CF2, CF3, CF4, NF, NF2, NF3, OF, OF2, GeF, GeF2, GeF3, GeF4, BF, BF2, BF3, PF, PF2, PF3, WF, WF2, WF3, WF4, WF5, WF6, WCl, WCl2, WCl3, WCl4, WCl5, WCl6, AlCl, AlCl2, AlCl3, HfF, HfF2, HfF3, HfF4, HfF5, ​​HfF6, CoF, CoF2, CoF3, and CoF4.

[0008] Additionally, the oxygen by-products may include one or more of O2, O, CO, CO2, NO, NO2, SO, SO2, and H2O.

[0009] Additionally, the fluorine by-products may include one or more of F, F2, and HF.

[0010] The etching gas residue may also include one or more of CF4, CHF3, CH2F2, CH3F, C2F2, C2F4, C2F6, C3F4, C3F6, C3F8, C4F6, C4F8, C4F10, HF, F2, HCl, Cl2, CCl4, HBr, Br2, HI, and I2.

[0011] Furthermore, in the above formula, "Σ[amount of filmy etching byproducts]" may be the sum of the amounts of all filmy etching byproducts measured by the mass analyzer; "Σ[amount of oxygen byproducts]" may be the sum of the amounts of all oxygen etching byproducts measured by the mass analyzer; "Σ[amount of total fluorine byproducts]" may be the sum of the amounts of all filmy etching byproducts measured by the mass analyzer; or "Σ[amount of etching gas]" may be the sum of the amounts of all etching gas measured by the mass analyzer.

[0012] Furthermore, in the above formula, "Σ[amount of filmy etching by-products]" may be the sum of the amounts of some substances in the filmy etching by-products measured by the mass analyzer; "Σ[amount of oxygen by-products]" may be the sum of the amounts of some substances in the oxygen etching by-products measured by the mass analyzer; "Σ[amount of fluorine by-products]" may be the sum of the amounts of some substances in the filmy etching by-products measured by the mass analyzer; or "Σ[amount of etching gas]" may be the sum of the amounts of some substances in the etching gas measured by the mass analyzer.

[0013] The partial substances may include the top n substances that have been found to have a high correlation through testing, where n may be a predetermined natural number.

[0014] Additionally, the partial substances may be determined through deep learning or machine learning analysis.

[0015] Also, a1, a2, a3, and a4 may be the same as each other.

[0016] In addition, at least some of a1, a2, a3, and a4 may be different from each other.

[0017] Additionally, a1, a2, a3, and a4 may be determined through deep learning or machine learning analysis.

[0018] Furthermore, the calculation unit can calculate the line width for each time period during which the dry etching process is performed, thereby calculating the top edge line width, the middle line width, and the bottom edge line width.

[0019] Furthermore, the present invention can provide a method for real-time measurement of line width during dry etching process.

[0020] In this case, the method for measuring line width in real time during a dry etching process according to the present invention includes the steps of measuring gaseous substances in a reaction chamber during a dry etching process using a mass spectrometer, and calculating line width CD based on the data measured by the mass spectrometer using the following equation:

[0021] CD = {a1 × Σ [amount of film-quality etching by-products]} × {a2 × Σ [amount of oxygen by-products]} × {a3 × Σ [amount of fluorine by-products]} / {a4 × Σ [amount of etching gas]} (where a1, a2, a3, and a4 are predetermined proportionality constants)

[0022] In addition, the film-quality etching by-products may include one or more of SiF, SiF2, SiF3, SiF4, SiCl, SiCl2, SiCl3, SiCl4, SiH, SiH2, SiH3, SiH4, CF, CF2, CF3, CF4, NF, NF2, NF3, OF, OF2, GeF, GeF2, GeF3, GeF4, BF, BF2, BF3, PF, PF2, PF3, WF, WF2, WF3, WF4, WF5, WF6, WCl, WCl2, WCl3, WCl4, WCl5, WCl6, AlCl, AlCl2, AlCl3, HfF, HfF2, HfF3, HfF4, HfF5, ​​HfF6, CoF, CoF2, CoF3, and CoF4.

[0023] Additionally, the oxygen by-products may include one or more of O2, O, CO, CO2, NO, NO2, SO, SO2, and H2O.

[0024] Additionally, the fluorine by-products may include one or more of F, F2, and HF.

[0025] The etching gas residue may also include one or more of CF4, CHF3, CH2F2, CH3F, C2F2, C2F4, C2F6, C3F4, C3F6, C3F8, C4F6, C4F8, C4F10, HF, F2, HCl, Cl2, CCl4, HBr, Br2, HI, and I2.

[0026] Furthermore, in the above formula, "Σ[amount of filmy etching byproducts]" may be the sum of the amounts of all filmy etching byproducts measured by the mass analyzer; "Σ[amount of oxygen byproducts]" may be the sum of the amounts of all oxygen etching byproducts measured by the mass analyzer; "Σ[amount of total fluorine byproducts]" may be the sum of the amounts of all filmy etching byproducts measured by the mass analyzer; or "Σ[amount of etching gas]" may be the sum of the amounts of all etching gas measured by the mass analyzer.

[0027] Furthermore, in the above formula, "Σ[amount of filmy etching by-products]" may be the sum of the amounts of some substances in the filmy etching by-products measured by the mass analyzer; "Σ[amount of oxygen by-products]" may be the sum of the amounts of some substances in the oxygen etching by-products measured by the mass analyzer; "Σ[amount of fluorine by-products]" may be the sum of the amounts of some substances in the filmy etching by-products measured by the mass analyzer; or "Σ[amount of etching gas]" may be the sum of the amounts of some substances in the etching gas measured by the mass analyzer.

[0028] The partial substances may include the top n substances that have been found to have a high correlation through testing, where n may be a predetermined natural number.

[0029] Additionally, the partial substances may be determined through deep learning or machine learning analysis.

[0030] Also, a1, a2, a3, and a4 may be the same as each other.

[0031] In addition, at least some of a1, a2, a3, and a4 may be different from each other.

[0032] Additionally, a1, a2, a3, and a4 may be determined through deep learning or machine learning analysis.

[0033] Meanwhile, the present invention can provide a method for calculating the top edge line width, the middle edge line width, and the bottom edge line width by applying the above-described dry etching process line width real-time measurement method every time the dry etching process is performed. [Effects of the Invention]

[0034] The real-time line width measurement device for a dry etching process according to the present invention can measure line widths in a reaction chamber in real time by measuring gaseous substances in a reaction chamber during a dry etching process using a mass spectrometer and calculating line widths based on data measured by the mass spectrometer.

[0035] This allows for early disposal of wafers that are not etched to the desired linewidth during the process, eliminating unnecessary post-processing and reducing manufacturing costs, improving economic efficiency. It also functions as an automated process control system, maintaining high process quality through automatic control of etching process time and conditions in real time. Furthermore, since the linewidth measurement method measures and calculates the linewidth during the process without requiring a separate etching linewidth measurement step, there is no additional loss of productivity. It enables monitoring of etching linewidths for all wafers or samples. It eliminates the risk of potential defects due to the limitations of existing linewidth measurement methods, which require intermittent sampling and measurement for all mass-produced samples. It can also be used to monitor etching defects and improve yields for all mass-produced samples. Furthermore, early detection of abnormalities in the etching environment, such as the reaction chamber, in real time allows for diagnosis of the status of semiconductor manufacturing equipment, thereby reducing product defects and improving productivity. [Brief explanation of the drawings]

[0036] [Figure 1] 1 is a schematic diagram of a real-time line width measurement device in a dry etching process according to an embodiment of the present invention. [Figure 2] 1 is a graph showing that the amount of SiF4, which is an example of a film etching by-product, is proportional to the line width, with the horizontal axis representing the line width (nm) and the vertical axis representing the amount of SiF4 (au). [Figure 3] 1 is a graph showing that there is a proportional relationship between line width and the amount of NO as an example of an oxygen by-product, with the horizontal axis representing line width (nm) and the vertical axis representing the amount of NO (au). [Figure 4]1 is a graph showing that the line width is inversely proportional to the amount of C4F6 used as an example of an etching gas, with the horizontal axis representing the line width (nm) and the vertical axis representing the amount of C4F6 (au). [Figure 5] This is a graph showing that line width and {Σ[amount of film-like etching by-products] × Σ[amount of oxygen by-products] × Σ[amount of fluorine by-products] / Σ[amount of etching gas]} are proportional to each other, with the horizontal axis representing line width (nm) and the vertical axis representing {Σ[amount of film-like etching by-products] × Σ[amount of oxygen by-products] × Σ[amount of fluorine by-products] / Σ[amount of etching gas]} (au). DETAILED DESCRIPTION OF THE INVENTION

[0037] A dry etching process line width real-time measuring device according to an embodiment of the present invention will be described in detail with reference to the drawings.

[0038] FIG. 1 is a schematic diagram of a dry etching process line width real-time measurement device 10 according to an embodiment of the present invention.

[0039] Referring to FIG. 1, a dry etching process line width real-time measurement device 10 includes a reaction chamber 11, a mass analyzer 12, and a calculation unit 13.

[0040] A dry etching process is performed in the reaction chamber 11. For example, when an etching gas is injected into the reaction chamber 11 and plasma is generated, the etching gas chemically reacts with the wafer surface to generate volatile reaction by-products, and these by-products desorb from the wafer surface, thereby removing the film. The dry etching process and the configuration of the reaction chamber are substantially the same as known processes or can be easily derived by those skilled in the art, so a detailed description thereof will be omitted.

[0041] The mass analyzer 12 serves to measure gaseous substances in the reaction chamber 11 in real time during the dry etching process. The mass analyzer 12 may be directly connected to the interior of the reaction chamber 11 or may be connected to the fore-line (exhaust line) of the reaction chamber 11. The configuration of such a mass analyzer itself is substantially the same as a known one or can be easily derived by a person of ordinary skill in the art, so a detailed description thereof will be omitted.

[0042] The calculation unit 13 serves to calculate the line width based on the data measured by the mass analyzer 12 .

[0043] More specifically, the calculation unit 13 can calculate the line width (CD) using the following equation 1, based on the fact that the line width is proportional to the amount of film etching by-products, oxygen by-products, and fluorine by-products in the reaction chamber 11 during the dry etching process, and inversely proportional to the amount of etching gas (see Figures 2 to 4).

[0044] (Equation 1) CD = a × Σ [amount of film-quality etching by-products] × Σ [amount of oxygen by-products] × Σ [amount of fluorine by-products] / Σ [amount of etching gas] Here, a is a proportionality constant.

[0045] The value of a can be determined by experiment. For example, a test can be performed by measuring the gaseous substance in the reaction chamber 11 using the mass analyzer 12 while performing a dry etching process, then measuring the actual line width, and then substituting the data measured by the mass analyzer 12 into Equation 1 to determine the proportionality constant so that the result has the same value as the actual line width. Furthermore, such an experiment can be repeated several times to determine the optimal proportionality constant, for example, by averaging.

[0046] Additionally, the value of a can be determined through deep learning or machine learning analysis, thereby further improving accuracy as the dry etching process proceeds.

[0047] The film-quality etch by-products can include, for example, one or more of SiF, SiF2, SiF3, SiF4, SiCl, SiCl2, SiCl3, SiCl4, SiH, SiH2, SiH3, SiH4, CF, CF2, CF3, CF4, NF, NF2, NF3, OF, OF2, GeF, GeF2, GeF3, GeF4, BF, BF2, BF3, PF, PF2, PF3, WF, WF2, WF3, WF4, WF5, WF6, WCl, WCl2, WCl3, WCl4, WCl5, WCl6, AlCl, AlCl2, AlCl3, HfF, HfF2, HfF3, HfF4, HfF5, ​​HfF6, CoF, CoF2, CoF3, and CoF4.

[0048] Additionally, oxygen by-products can include, for example, one or more of O2, O, CO, CO2, NO, NO2, SO, SO2, and H2O.

[0049] Additionally, fluorine by-products can include, for example, one or more of F, F2, and HF.

[0050] The etching gas may also include, for example, one or more of CF4, CHF3, CH2F2, CH3F, C2F2, C2F4, C2F6, C3F4, C3F6, C3F8, C4F6, C4F8, C4F10, HF, F2, HCl, Cl2, CCl4, HBr, Br2, HI, and I2.

[0051] However, the above materials are merely examples taking into consideration the film quality, etching gas, etc. used in conventional semiconductor / display wafer dry etching processes, and the technical concept of the present invention is not necessarily limited thereto, and may vary depending on the film quality, etching gas, etc. used in individual dry etching processes.

[0052] In one embodiment, the calculation unit 13 can calculate the line width using all the data measured by the mass analyzer 12. That is, Equation 1 can be embodied as Equation 2 below.

[0053] (Equation 2) CD = a × Σ [total amount of film-quality etching by-products] × Σ [total amount of oxygen by-products] × Σ [total amount of fluorine by-products] / Σ [total amount of etching gas]

[0054] For example, if SiF, SiF2, SiF3, and SiF4 are detected as film-like etching by-products by the mass analyzer 12, then "Σ[total film-like etching by-product amount]" in Equation 2 refers to the sum of all of these amounts (i.e., the sum of the amounts of SiF, SiF2, SiF3, and SiF4). The same applies to the remaining oxygen by-products, fluorine by-products, and etching gas. In other words, in Equation 2, "Σ[total oxygen by-product amount]" refers to the sum of all oxygen by-product amounts measured by the mass analyzer 12, "Σ[total fluorine by-product amount]" refers to the sum of all fluorine by-product amounts measured by the mass analyzer 12, and "Σ[total etching gas amount]" refers to the sum of all etching gas amounts measured by the mass analyzer 12.

[0055] In another embodiment, the calculation unit 13 can calculate the line width using part of the data measured by the mass analyzer 12. That is, Equation 1 can be embodied as Equation 3 below.

[0056] (Equation 3) CD = a × Σ [amount of partial film etching by-products] × Σ [amount of partial oxygen by-products] × Σ [amount of partial fluorine by-products] / Σ [amount of partial etching gas]

[0057] For example, if the mass analyzer 12 detects SiF, SiF2, SiF3, and SiF4 as film-like etching by-products, then in Equation 3, "Σ[amount of some film-like etching by-products]" means the sum of the amounts of some of these substances (e.g., excluding SiF, only the sum of the amounts of SiF2, SiF3, and SiF4). The same applies to the remaining oxygen by-products, fluorine by-products, and etching gas. That is, in Equation 3, "Σ[amount of some oxygen by-products]" means the sum of the amounts of some of the substances in the oxygen by-products measured by the mass analyzer 12, "Σ[amount of some fluorine by-products]" means the sum of the amounts of some of the substances in the fluorine by-products measured by the mass analyzer 12, and "Σ[amount of some etching gas]" means the sum of the amounts of some of the substances in the etching gas measured by the mass analyzer 12.

[0058] The data measured by the mass analyzer 12 relating to which substance to use can be determined by testing.

[0059] To aid in understanding, for example, as mentioned above, the film-like etching by-products are: SiF, SiF2, SiF3, SiF4, SiCl, SiCl2, SiCl3, SiCl4, SiH, SiH2, SiH3, SiH4, CF, CF2, CF3, CF4, NF, NF2, NF3, OF, OF2, GeF, GeF2, GeF3, GeF4, BF, BF2, BF3, PF, PF2, PF3, WF, WF2, WF3, WF4, WF5 The dry etching process may include one or more of WF6, WCl, WCl2, WCl3, WCl4, WCl5, WCl6, AlCl, AlCl2, AlCl3, HfF, HfF2, HfF3, HfF4, HfF5, ​​HfF6, CoF, CoF2, CoF3, and CoF4. The linewidth is calculated using each of these, depending on the film quality and etching gas used in the dry etching process, and then compared to the actual linewidth. For example, in Equation 1, the linewidth is calculated by substituting only the amount of SiF for "Σ[amount of film quality etching byproducts]" as follows: (1) the linewidth is calculated by substituting only the amount of SiF; (2) the linewidth is calculated by substituting only the amount of SiF2; (3) the linewidth is calculated by substituting only the amount of SiF3; and (4) the linewidth is calculated by substituting only the amount of SiF4. The results are then compared to the actual linewidth and sorted in order of smallest difference. The smaller the difference, the higher the correlation between the materials. Therefore, the linewidth can be calculated using only the top n substances that have been found to have a high degree of correlation among the data measured by the mass analyzer 12. Here, n is a natural number, and the top number of substances to be used can be determined differently as needed. The same applies to the remaining oxygen by-products, fluorine by-products, and etching gases.

[0060] Furthermore, the data relating to which substance among the data measured by the mass analyzer 12 to use can be determined by deep learning or machine learning analysis.

[0061] In still another embodiment, some of the film etching by-products, oxygen by-products, fluorine by-products, and etching gases use the entire data measured by the mass analyzer 12, and some of the data measured by the mass analyzer 12 can be used. In this case, 16 combinations are possible. For ease of understanding, for example, Equation 1 can be embodied as the following Equation 4.

[0062] (Equation 4) CD = a × Σ [total amount of etching by-products] × Σ [amount of partial oxygen by-products] × Σ [amount of total fluorine by-products] / Σ [amount of partial etching gas]

[0063] Furthermore, different proportionality constants can be applied to the amount of film-based etching by-products, the amount of oxygen by-products, the amount of fluorine by-products, and / or the amount of etching gas, and thus the line width can be calculated using the following Equation 5:

[0064] (Equation 5) CD = {a1 × Σ [amount of film-quality etching by-products]} × {a2 × Σ [amount of oxygen by-products]} × {a3 × Σ [amount of fluorine by-products]} / {a4 × Σ [amount of etching gas]}

[0065] Here, at least some of a1, a2, a3, and a4 may be the same as or different from one another. Such proportionality constants may be determined by testing, or by deep learning or machine learning analysis.

[0066] Furthermore, in Equation 5, all of the data measured by the mass analyzer 12 may be used as in Equation 2, or only a portion of the data measured by the mass analyzer 12 may be used as in Equation 3. In the former case, it is the same as Equation 6 below, and in the latter case, it is as in Equation 7 below.

[0067] (Equation 6) CD = {a1 × Σ [total amount of film-quality etching by-products]} × {a2 × Σ [total amount of oxygen by-products]} × {a3 × Σ [total amount of fluorine by-products]} / {a4 × Σ [total amount of etching gas]}

[0068] (Equation 7) CD = {a1 × Σ [amount of partial film-based etching by-products]} × {a2 × Σ [amount of partial oxygen by-products]} × {a3 × Σ [amount of partial fluorine by-products]} / {a4 × Σ [amount of partial etching gas]}

[0069] Regarding Equation 7, which substance-related data from the data measured by the mass analyzer 12 is to be used may be determined by testing, or by deep learning or machine learning.

[0070] Of course, as in Equation 4, it is also possible to use the entire data measured by the mass analyzer 12 for the film etching by-products, oxygen by-products, fluorine by-products, and part of the etching gas, and to use part of the data measured by the mass analyzer 12.

[0071] By applying this real-time measurement method for linewidth during a dry etching process at each time the dry etching process is performed, it is possible to calculate the top CD, middle CD, and bottom CD. For example, by applying the real-time measurement method for linewidth during a dry etching process according to an embodiment of the present invention to the early stage of the process, it is possible to calculate the top CD, by applying it to the middle stage of the process, it is possible to calculate the middle CD, and by applying it to the late stage of the process, it is possible to calculate the bottom CD.

[0072] Different proportionality constants can be applied when calculating the top line width, the middle line width, and the bottom line width, respectively, and when using part of the data measured by mass analyzer 12 as in Equations 3, 4, and 7, data relating to different substances can also be used.

[0073] Figure 5 is a graph showing that line width and {Σ[amount of film-like etching by-products] × Σ[amount of oxygen by-products] × Σ[amount of fluorine by-products] / Σ[amount of etching gas]} are proportional to each other, with the horizontal axis representing line width (nm) and the vertical axis representing {Σ[amount of film-like etching by-products] × Σ[amount of oxygen by-products] × Σ[amount of fluorine by-products] / Σ[amount of etching gas]} (au).

[0074] Referring to FIG. 5, when the correlation between the actual line width and {Σ[amount of film-quality etching by-products]×Σ[amount of oxygen by-products]×Σ[amount of fluorine by-products] / Σ[amount of etching gas]} used in the method for measuring line width in real time in a dry etching process according to an embodiment of the present invention is shown, the coefficient of determination R 2 The correlation is about 0.95, which indicates a very high level of correlation. Therefore, it was confirmed that the line width can be calculated with high accuracy using the method for measuring line width in real time during dry etching according to an embodiment of the present invention.

[0075] The above-described dry etching process line width real-time measuring apparatus 10 is merely one of various embodiments of the dry etching process line width real-time measuring apparatus according to the present invention. The technical concept of the present invention is not limited to the above-described embodiments, but includes all modifications that can be easily made by those skilled in the art within the scope of the claims.

Claims

1. a reaction chamber in which a dry etching process is performed; a mass spectrometer for measuring gaseous substances in the reaction chamber during the dry etching process; Based on the data measured by the mass analyzer, the following formula: CD={a1×Σ[amount of film-quality etching by-products]}×{a2×Σ[amount of oxygen by-products]}×{a3×Σ[amount of fluorine by-products]} / {a4×Σ[amount of etching gas]} (where a1, a2, a3, and a4 are predetermined proportionality constants) a calculation unit for calculating the line width CD by Contains A real-time line width measurement device for a dry etching process.

2. The film-like etch by-products include one or more of SiF, SiF2, SiF3, SiF4, SiCl, SiCl2, SiCl3, SiCl4, SiH, SiH2, SiH3, SiH4, CF, CF2, CF3, CF4, NF, NF2, NF3, OF, OF2, GeF, GeF2, GeF3, GeF4, BF, BF2, BF3, PF, PF2, PF3, WF, WF2, WF3, WF4, WF5, WF6, WCl, WCl2, WCl3, WCl4, WCl5, WCl6, AlCl, AlCl2, AlCl3, HfF, HfF2, HfF3, HfF4, HfF5, ​​HfF6, CoF, CoF2, CoF3, and CoF4. The dry etching process line width real-time measuring device according to claim 1.

3. The oxygen by-products include one or more of O2, O, CO, CO2, NO, NO2, SO, SO2, and H2O. The dry etching process line width real-time measuring device according to claim 1.

4. The fluorine by-products include one or more of F, F2, and HF. The dry etching process line width real-time measuring device according to claim 1.

5. The etching gas residue includes one or more of CF4, CHF3, CH2F2, CH3F, C2F2, C2F4, C2F6, C3F4, C3F6, C3F8, C4F6, C4F8, C4F10, HF, F2, HCl, Cl2, CCl4, HBr, Br2, HI, and I2. The dry etching process line width real-time measuring device according to claim 3.

6. In the above formula, "Σ [amount of filmy etching by-products]" is the sum of the amounts of all filmy etching by-products measured by the mass spectrometer, or "Σ [amount of oxygen by-products]" is the sum of the amounts of all oxygen etching by-products measured by the mass spectrometer, or "Σ [total amount of fluorine by-products]" is the sum of the amounts of all film-like etching by-products measured by the mass spectrometer, or "Σ [amount of etching gas]" is the sum of the amounts of all etching gases measured by the mass spectrometer The dry etching process line width real-time measuring device according to claim 1.

7. In the above formula, "Σ [amount of film-like etching by-products]" is the sum of the amounts of some substances in the film-like etching by-products measured by the mass spectrometer, or "Σ [amount of oxygen by-products]" is the sum of the amounts of some substances in the oxygen etching by-products measured by the mass spectrometer, or "Σ [amount of fluorine by-products]" is the sum of the amounts of some substances in the film-like etching by-products measured by the mass spectrometer, or "Σ [amount of etching gas]" is the sum of the amounts of some substances in the etching gas measured by the mass spectrometer The dry etching process line width real-time measuring device according to claim 1.

8. The partial substances include the top n substances that have been found to have a high correlation through testing, where n is a predetermined natural number. The dry etching process line width real-time measuring device according to claim 7.

9. The partial substances are determined through deep learning or machine learning analysis. The dry etching process line width real-time measuring device according to claim 7.

10. a1, a2, a3, and a4 may be the same as each other The dry etching process line width real-time measuring device according to claim 1.

11. At least some of a1, a2, a3, and a4 may be different from each other. The dry etching process line width real-time measuring device according to claim 1.

12. a1, a2, a3, and a4 are determined through deep learning or machine learning analysis The dry etching process line width real-time measuring device according to claim 1.

13. The calculation unit calculates the line width for each time the dry etching process is performed, thereby calculating the top line width, the middle line width, and the bottom line width. The dry etching process line width real-time measuring device according to claim 1.

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