Modular precursor delivery and distribution for rapid switching

Abstract

An exemplary substrate processing system may include a lid plate. The system may include multiple processing regions. The system may include at least one flow distributor. Each flow distributor may include a top surface and a side surface. Each flow distributor may define an inlet and multiple outlets. Each inlet and outlet may extend through the side surface. Each flow distributor may define an inlet lumen extending from the fluid inlet to a hub. Each flow distributor may define multiple outlet lumens, each extending from the hub to one of the outlets. Each outlet lumen may have the same length. The system may include multiple output manifolds. Each output manifold may be coupled to a respective processing region. The system may include multiple valves. At least one valve may be coupled between each outlet and the output manifold.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 18 / 095,262, filed Jan. 10, 2023, entitled "MODULAR PRECURSOR DELIVERY AND SPLITTING FOR FAST SWITCHING," the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to semiconductor processes and apparatus, and more particularly to substrate processing systems and components. [Background technology]

[0003]

[0003] Semiconductor processing systems often utilize cluster tools to integrate multiple process chambers. This configuration facilitates performing multiple sequential processing steps without removing the substrate from a controlled processing environment, or allows similar processes to be performed on multiple substrates at once within a variable chamber. These chambers may include, for example, degassing chambers, pre-treatment chambers, transfer chambers, chemical vapor deposition chambers, physical vapor deposition chambers, etch chambers, metrology chambers, and other chambers. The combination of chambers within a cluster tool, and the operating conditions and parameters under which these chambers operate, are selected to produce a specific structure using a specific process recipe and process flow.

[0004]

[0004] Processing systems often include a gas distribution system that can mix and / or otherwise deliver multiple process gases to various chambers. The flow of these gases is carefully controlled to ensure uniform flow of gas into each processing chamber. Additionally, the gases may need to be maintained at a constant temperature during the gas delivery process.

[0005]

[0005] Therefore, there is a need for improved systems and methods that can be used to efficiently mix and / or otherwise deliver gases to a processing chamber under desired conditions. These and other needs are addressed by the present technique. Summary of the Invention

[0006] An exemplary substrate processing system can include a lid plate. The system can include multiple processing regions disposed below the lid plate. The system can include at least one fluid flow distributor seated on the lid plate. Each fluid flow distributor can include a top surface and multiple side surfaces. Each fluid flow distributor can define a fluid inlet and multiple fluid outlets. The fluid inlet and multiple fluid outlets can each extend through at least one of the multiple side surfaces. Each fluid flow distributor can define an inlet lumen extending from the fluid inlet to a central hub. Each fluid flow distributor can define multiple outlet lumens, each extending from the central hub to a respective one of the multiple fluid outlets. Each of the multiple outlet lumens can have the same length. The system can include multiple output manifolds seated on the lid plate. Each of the multiple output manifolds can be fluidly coupled to a respective one of the multiple processing regions. The system can include multiple valves. At least one valve may be fluidly coupled between each fluid outlet and a respective one of the plurality of output manifolds.

[0007] In some embodiments, the at least one fluid flow distributor may include a plurality of fluid flow distributors. The semiconductor processing system may include a plurality of fluid sources. Each of the plurality of fluid sources may be fluidly coupled to a fluid inlet of one of the plurality of fluid flow distributors. One of the plurality of fluid sources may include a purge gas source. At least one of the plurality of fluid sources may include a precursor fluid source. The plurality of fluid flow distributors may be arranged in a vertical stack. The plurality of valves may include a plurality of valves for each fluid outlet. The plurality of valves for the fluid gas outlets may be arranged in series with each other. The plurality of valves for each fluid outlet may include a purge valve and at least one precursor valve. The purge valve may be arranged upstream of each of the at least one precursor valve. The plurality of valves for each fluid outlet may be connected to a respective one of the plurality of output manifolds by a single flow path. The number of the plurality of valves for each fluid outlet may match the number of the plurality of fluid flow distributors. Each fluid flow distributor may define a bypass lumen fluidly coupled to the central hub. Each of the plurality of fluid outlets may include an orifice having a smaller diameter than an associated one of the plurality of outlet lumens. The number of the plurality of fluid outlets in each fluid diverter may correspond to the number of the plurality of processing regions.

[0008] Some embodiments of the present technology may include a fluid flow diverter. The fluid flow diverter may include a body having a top surface and a plurality of side surfaces. The body may define a fluid inlet and a plurality of fluid outlets. The fluid inlet and the plurality of fluid outlets may each extend through at least one of the plurality of side surfaces. The body may define an inlet lumen extending from the fluid inlet to a central hub. The body may define a plurality of outlet lumens, each extending from the central hub to a respective one of the plurality of fluid outlets. Each of the plurality of outlet lumens may have the same length.

[0009] In some embodiments, the fluid flow diverter may include at least one heater cartridge disposed within the body. Each of the multiple outlet lumens may be disposed equidistant from a respective one of the at least one heater. The body may define a bypass lumen fluidly connected to the central hub. Each of the multiple fluid outlets may include an orifice having a smaller diameter than an associated one of the multiple outlet lumens. Each of the multiple outlet lumens may define a straight flow path. The body may define four fluid outlets and four outlet lumens. A fluid inlet or a fluid outlet may not extend through a top or bottom surface of the body.

[0010] Some embodiments of the present technology may include a semiconductor processing system. The system may include a lid plate. The system may include multiple processing regions disposed below the lid plate. The system may include at least one fluid flow distributor seated on the lid plate. Each fluid flow distributor may include a top surface and multiple side surfaces. Each fluid flow distributor may define a fluid inlet and multiple fluid outlets. The fluid inlet and the multiple fluid outlets may each extend through at least one of the multiple side surfaces. The number of the multiple fluid outlets may match the number of the multiple processing regions. Each fluid flow distributor may define an inlet lumen extending from the fluid inlet to a central hub. Each fluid flow distributor may define multiple outlet lumens, each extending from the central hub to a respective one of the multiple fluid outlets. Each of the multiple outlet lumens may have the same length.

[0011] Such technology can offer numerous advantages over conventional systems and techniques. For example, processing systems can provide multi-substrate processing capabilities that can be expanded far beyond conventional designs. For example, embodiments can provide a modular structure that can accommodate multiple precursors by adding or subtracting only a small set of modular components, which can help reduce the cost and complexity of gas delivery systems. Furthermore, processing systems can provide even flow distribution among multiple chambers. Embodiments can provide simplified delivery path designs that reduce the amount of dead volume and enable rapid switching between different precursors during a processing step. These and other embodiments, along with their many advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0012] A further understanding of the nature and advantages of the disclosed techniques may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a schematic top plan view illustrating an exemplary processing system according to some embodiments of the present technique; [Figure 2] FIG. 1 is a schematic isometric view illustrating a transfer region of an exemplary chamber system in accordance with some embodiments of the present technique. [Figure 3] FIG. 1 is a schematic isometric view illustrating a transfer region of an exemplary chamber system in accordance with some embodiments of the present technique. [Figure 4] FIG. 1 is a schematic isometric view illustrating a transfer region of an exemplary chamber system in accordance with some embodiments of the present technique. [Figure 5] 1 is a schematic partial isometric view of a chamber system according to some embodiments of the present technique; [Figure 6] 1 is a schematic top plan view illustrating an exemplary processing system according to some embodiments of the present technique; [Figure 7A] FIG. 1 is a schematic top isometric view of an exemplary fluid flow diverter in accordance with some embodiments of the present technology; [Figure 7B] FIG. 7B is a schematic top plan view of the fluid flow diverter of FIG. 7A. [Figure 7C] FIG. 7B is a partial schematic top plan view showing an orifice coupled to the fluid flow diverter of FIG. 7A in accordance with some embodiments of the present technology. [Figure 8] FIG. 7 is an isometric view of the valve arrangement of the processing system of FIG. 6. [Figure 8A] 7 is a cross-sectional top plan view showing the valve block arrangement of the processing system of FIG. 6. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0024] Some of the figures are included as schematic diagrams. It should be understood that the figures are for illustrative purposes and should not be considered to scale or proportion unless such scale or proportion is explicitly stated. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0015]

[0025] In the accompanying figures, similar components and / or features may be labeled with the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a letter that distinguishes between the similar components. When only a first reference label is used herein, the description is applicable to any one of the similar components having the same first reference label, regardless of the letter.

[0016]

[0026] Substrate processing can involve time-consuming steps to add, remove, or otherwise modify material on a wafer or semiconductor substrate. Efficient substrate movement can reduce wait times and increase substrate throughput. To increase the number of substrates processed within a cluster tool, additional chambers can be incorporated onto the mainframe. While transfer robots and processing chambers can be continually added by lengthening the tool, this can become space-inefficient as the footprint of the cluster tool expands. Therefore, the present technology can include cluster tools with an increased number of processing chambers within a defined footprint. To accommodate the limited footprint around the transfer robot, the technology can increase the number of processing chambers laterally outward from the robot. For example, some conventional cluster tools may include one or two processing chambers positioned around a centrally located section of the transfer robot to maximize the number of chambers radially around the robot. The present technology can extend this concept by incorporating additional chambers laterally outward as another row or group of chambers. For example, the techniques may be applied to cluster tools that include three, four, five, six or more processing chambers each accessible at one or more robot access locations.

[0017]

[0027] However, using a single gas source to deliver process gas to multiple chambers creates the potential for non-uniform gas flow between chambers. Furthermore, due to manufacturing tolerances and flow path design, conventional systems can result in process gas dead volumes and may not be suitable for rapid precursor switching during processing. For example, slight differences in cross-sectional area between the flow paths to different chambers, multiplied by long flow path lengths, can result in significant flow conductance differences from chamber to chamber. These conductance differences can create dead volumes. Conventional systems also utilize components designed for a fixed number of precursors. Reducing the number of precursors used requires blocking existing flow paths, while adding precursors requires designing and fabricating new components. Therefore, the scalability of existing gas delivery systems for multiple chambers is limited.

[0018]

[0028] The present technology overcomes these problems by incorporating passive flow control devices that ensure equal flow rates from the gas source between each chamber. Embodiments can implement a modular fluid flow divider design that provides short, straight-line flow paths to each chamber, reducing dead volume and enabling rapid switching between different precursors. The modular design can allow for the number of precursors delivered to a set of chambers to be increased or decreased by adding or removing a small number of modular components, including fluid flow dividers and multiple valve blocks. The modular design can also reduce the complexity and cost of manufacturing gas delivery components. Furthermore, the present technology can incorporate an inert gas flow that creates a positive pressure flow that can be used to prevent backflow of different precursors.

[0019]

[0029] While the remainder of the disclosure will always identify specific structures, such as a four-position chamber system, in which the present structures and methods may be employed, it will be readily understood that the present systems and methods are equally applicable to any number of structures and devices that can benefit from the described structural capabilities. Thus, the present technology should not be considered limited to use with only specific structures. Furthermore, while an exemplary tool system is described to provide a foundation for the present technology, it should be understood that the present technology can be incorporated with any number of semiconductor processing chambers and tools that can benefit from some or all of the described processes and systems.

[0020]

[0030] 1 illustrates a top plan view of one embodiment of a deposition, etch, bake, and cure chamber substrate processing tool or processing system 100 in accordance with some embodiments of the present technology. In the figure, a set of front-opening unified pods 102 supplies substrates of various sizes that are received into a factory interface 103 by robotic arms 104a and 104b, placed into a load lock or low-pressure holding area 106, and then delivered to one of substrate processing regions 108 positioned in chamber systems or quad sections 109a-c, each of which may be a substrate processing system having a transfer area fluidly coupled to multiple processing regions 108. While a quad system is illustrated, it should be understood that standalone chambers, twin chambers, and platforms incorporating other multiple chamber systems are also encompassed by the present technology. A second robot arm 110 housed in a transfer chamber 112 can be used to transport substrate wafers from the holding area 106 to the quad section 109 and vice versa, and the second robot arm 110 can be housed in a transfer chamber to which each of the quad sections or processing systems can be connected. Each substrate processing area 108 can be equipped to perform multiple substrate processing steps, including cyclical layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as any number of deposition processes including etching, pre-cleaning, annealing, plasma treatment, degassing, alignment, and other substrate processes.

[0021]

[0031] Each quad section 109 can include a transfer region capable of receiving substrates from and delivering substrates to the second robot arm 110. The transfer region of the chamber system can be aligned with a transfer chamber having the second robot arm 110. In some embodiments, the transfer region can be laterally accessible to the robot. For subsequent processing, components in the transfer section can vertically translate the substrate into the overlying processing region 108. Similarly, the transfer region can also be operable to rotate the substrate between positions within each transfer region. The substrate processing region 108 can include any number of system components for depositing, annealing, curing, and / or etching a material film on a substrate or wafer. In some configurations, two sets of processing regions, such as the processing regions in quad sections 109a and 109b, can be used to deposit material on a substrate, and a third set of processing chambers, such as the processing chambers or region in quad section 109c, can be used to cure, anneal, or process the deposited film. In another configuration, all three sets of chambers, such as all 12 chambers shown, can be configured to both deposit and / or cure a film on a substrate.

[0022]

[0032] As shown, the second robot arm 110 may include two arms for simultaneously delivering and / or retrieving multiple substrates. For example, each quad section 109 may include two accesses 107 along a surface of the transfer region housing that may be aligned laterally to the second robot arm. The accesses may be defined along a surface adjacent to the transfer chamber 112. In some embodiments, as shown, the first access may be aligned with a first substrate support of the quad section's plurality of substrate supports. Additionally, the second access may be aligned with a second substrate support of the quad section's plurality of substrate supports. The first substrate support may be adjacent to the second substrate support, and the two substrate supports may define a first row of substrate supports in some embodiments. As shown in the illustrated configuration, the second row of substrate supports may be positioned laterally outward from the transfer chamber 112 and aft of the first row of substrate supports. The two arms of the second robot arm 110 may be spaced apart so that the two arms can simultaneously enter a quad section or chamber system to deliver or retrieve one or two substrates to a substrate support in the transfer region.

[0023]

[0033] Any one or more of the transfer regions described may be incorporated with additional chambers apart from the fabrication system shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for material films are contemplated by processing system 100. Furthermore, any number of other processing systems that may incorporate transfer systems for performing any of the specific operations, such as substrate movement, may be utilized with the present techniques. In some embodiments, a processing system that may provide access to multiple processing chamber regions while maintaining a vacuum environment in various sections, such as the holding and transfer regions described above, may enable steps to be performed in multiple chambers while maintaining a specific vacuum environment between individual processes.

[0024]

[0034] As previously mentioned, processing system 100, and more specifically, a quad section or chamber system incorporated into processing system 100 or other processing systems, can include a transfer section positioned below an exemplary processing chamber region. FIG. 2 is a schematic isometric view illustrating the transfer section of an exemplary chamber system 200 according to some embodiments of the present technology. FIG. 2 may illustrate additional aspects or variations of aspects of the transfer region described above, and may include any of the components or features described. The illustrated system can include a transfer region housing 205, which may be a chamber body as described further below, defining a transfer region that may include multiple components. The transfer region may further be defined, at least in part, from above by a processing chamber or processing region fluidly coupled to the transfer region, such as the processing chamber region 108 illustrated in quad section 109 of FIG. 1. Sidewalls of the transfer region housing can define one or more access locations 207 where substrates can be delivered and retrieved, such as by a second robot arm 110 as described above. The access location 207, in some embodiments, may be a slit valve or other sealable access location that includes a door or other sealing mechanism to provide a sealed environment within the transfer region housing 205. While two such access locations 207 are illustrated, it should be understood that some embodiments may include only a single access location 207, as well as access locations on multiple sides of the transfer region housing. It should also be understood that the illustrated transfer section may be sized to accommodate any substrate size, including substrates characterized by any number of geometries or shapes, including 200 mm, 300 mm, 450 mm, or larger or smaller substrates.

[0025]

[0035] Within the transfer region housing 205, there may be multiple substrate supports 210 positioned around the transfer region volume. While four substrate supports are illustrated, it should be understood that any number of substrate supports is similarly encompassed by embodiments of the present technology. For example, three, four, five, six, eight, or more substrate supports 210 may be housed in a transfer region according to embodiments of the present technology. The second robot arm 110 may deliver substrates to either or both of the substrate supports 210a or 210b through the access 207. Similarly, the second robot arm 110 may retrieve substrates from these locations. Lift pins 212 may protrude from the substrate support 210 to allow the robot access underneath the substrate. The lift pins may, in some embodiments, be fixed on the substrate support or may be fixed in a position that allows the substrate support to be recessed downward, or the lift pins may also be raised or lowered through the substrate support. The substrate support 210 may be vertically translatable and, in some embodiments, may extend to a processing chamber region of the substrate processing system, such as processing chamber region 108 positioned above the transfer region housing 205.

[0026]

[0036] The transfer region housing 205 can provide access 215 for an alignment system, which may extend through an aperture in the transfer region housing as shown and may include an aligner that can operate in conjunction with a laser, camera, or other monitoring device projecting or transmitting through an adjacent aperture to determine whether a translated substrate is properly aligned. The transfer region housing 205 can also include a transfer apparatus 220 that can operate to position the substrate in a number of ways and move the substrate between various substrate supports. In one example, the transfer apparatus 220 can move the substrate on substrate supports 210a and 210b to substrate supports 210c and 210d, which may allow additional substrates to be delivered into the transfer chamber. Additional transfer operations can include rotating the substrate between the substrate supports for additional processing in the overlying processing region.

[0027]

[0037] The transfer apparatus 220 can include a central hub 225 that can include one or more shafts extending into the transfer chamber. An end effector 235 can be coupled to the shaft. The end effector 235 can include multiple arms 237 extending radially or laterally outward from the central hub. While a central body with arms extending therefrom is illustrated, the end effector can also include separate arms, in various embodiments, each coupled to a shaft or central hub. Embodiments of the present technology can include any number of arms. In some embodiments, the number of arms 237 can be similar to or equal to the number of substrate supports 210 included in the chamber. Thus, as illustrated, for four substrate supports, the transfer apparatus 220 can include four arms extending from the end effector. The arms can be characterized by any number of shapes and profiles, such as linear or arcuate profiles, as well as any number of distal profiles, including hooks, rings, forks, or other designs for supporting a substrate and / or providing access to the substrate, such as for alignment or engagement.

[0028]

[0038] The end effector 235, or components or portions of the end effector, can be used to contact the substrate during transfer or movement. These components and end effectors can be made of or include a number of materials, including conductive and / or insulating materials. In some embodiments, the materials can be coated or plated to withstand contact with precursors or other chemicals that may pass into the transfer chamber from the overlying processing chamber.

[0029]

[0039] Additionally, materials can be provided or selected to withstand other environmental characteristics, such as temperature. In some embodiments, the substrate support may be operable to heat a substrate disposed thereon. The substrate support may be configured to elevate the surface or substrate temperature to about 100° C. or higher, about 200° C. or higher, about 300° C. or higher, about 400° C. or higher, about 500° C. or higher, about 600° C. or higher, about 700° C. or higher, about 800° C. or higher, or higher. Since any of these temperatures may be maintained during processing, components of the transfer apparatus 220 may be exposed to any of these listed or included temperatures. Consequently, in some embodiments, any material may be selected to accommodate these temperature conditions, including materials such as ceramics and metals, which may be characterized by relatively low coefficients of thermal expansion or other beneficial properties.

[0030]

[0040] The connection of the components may also be compatible with processing in high-temperature and / or corrosive environments. For example, if the end effector and end portion are each ceramic, the connection may include press fittings, snap fittings, or other fittings that may not include additional materials, such as bolts, that may expand and contract with temperature and cause cracks in the ceramic. In some embodiments, the end portion may be continuous with the end effector or may be integrally formed therewith. Any number of other materials that may facilitate processing or promote durability during processing may be utilized and are also encompassed by the present technology. The transfer device 220 may include numerous components and configurations that may facilitate movement of the end effector in multiple directions, which, along with the drive system components to which the end effector may be coupled, may facilitate rotational movement as well as vertical or lateral movement in one or more ways.

[0031]

[0041] 3 is a schematic isometric view illustrating a transfer region of an exemplary chamber system 300 according to some embodiments of the present technology. Chamber system 300 may be similar to the transfer region of chamber system 200 described above and may include similar components, including any of the components, features, or configurations described above. FIG. 3, in conjunction with the following figures, can also illustrate the connection of certain components encompassed by the present technology.

[0032]

[0042] The chamber system 300 may include a chamber body 305 or housing that defines a transfer region. Within the defined volume, there may be multiple substrate supports 310 distributed around the chamber body, as described above. As described further below, each substrate support 310 may be vertically translatable along a central axis of the substrate support between a first position, as shown, and a second position where substrate processing may be performed. The chamber body 305 may also define one or more accesses 307 therethrough. A transfer apparatus 335 may be positioned within the transfer region and configured to engage and rotate substrates between the substrate supports 310 within the transfer region, as described above. For example, the transfer apparatus 335 may be rotatable about its central axis to reposition the substrate. The transfer apparatus 335 may also be laterally translatable in some embodiments to further facilitate repositioning of the substrate on each substrate support.

[0033]

[0043] The chamber body 305 may include a top surface 306 that may provide support for overlying components of the system. The top surface 306 may define a gasket groove 308 that may provide a seat for a gasket that provides an airtight seal of the overlying components for vacuum processing. Unlike some conventional systems, the chamber system 300, as well as other chamber systems in accordance with some embodiments of the present technology, may include an open transfer region within the processing chamber, with the processing region formed above the transfer region. Because the transfer apparatus 335 forms the sweep region, supports or structures for isolating the processing region may not be available. As a result, the present technology may utilize an overlying lid structure, as described below, to form an isolated processing region above the open transfer region. Thus, in some embodiments, airtight sealing between the chamber body and the overlying components may only be effective around the outer chamber body walls that define the transfer region, and in some embodiments, there may be no internal connection. The chamber body 305 may also define an aperture 315 that may facilitate exhaust flow from the processing region of the overlying structure. The top surface 306 of the chamber body 305 may define one or more gasket grooves around the aperture 315 for sealing with the overlying component. Additionally, the aperture may provide a positioning feature that may facilitate stacking of components in some embodiments.

[0034]

[0044] 4 is a schematic isometric view illustrating structures above a chamber system 300 according to some embodiments of the present technology. For example, in some embodiments, a first lid plate 405 may rest on the chamber body 305. The first lid plate 405 may feature a first surface 407 and a second surface 409 opposite the first surface. The first surface 407 of the first lid plate 405 may contact the chamber body 305 and define another groove that cooperates with the groove 308 described above to form a gasket channel between the components. The first lid plate 405 may also define an aperture 410 that can provide separation from the region above the transfer chamber to form a processing region for substrate processing.

[0035]

[0045] The apertures 410 may be defined through the first lid plate 405 and may be at least partially aligned with the substrate supports of the transfer region. In some embodiments, the number of apertures 410 may be equal to the number of substrate supports in the transfer region, and each aperture 410 may be axially aligned with one of the substrate supports. As described further below, the processing region may be at least partially defined by the substrate supports when vertically elevated to a second position within the chamber system. The substrate supports may extend through the apertures 410 in the first lid plate 405. Thus, in some embodiments, the apertures 410 in the first lid plate 405 may be characterized by a diameter larger than the diameter of the associated substrate support. Depending on the amount of separation, the diameter may be about 25% or less larger than the diameter of the substrate support, and in some embodiments may be about 20% or less, about 15% or less, about 10% or less, about 9% or less, about 8% or less, about 7% or less, about 6% or less, about 5% or less, about 4% or less, about 3% or less, about 2% or less, about 1% or less, or less than the diameter of the substrate support, which may provide a minimum gap distance between the substrate support and the opening 410.

[0036]

[0046] The first lid plate 405 may also include a second surface 409 opposite the first surface 407. The second surface 409 may define a recessed ledge 415 that may form an annular recessed shelf extending through the second surface 409 of the first lid plate 405. In some embodiments, the recessed ledge 415 may be defined around each aperture of the plurality of apertures 410. The recessed shelf may provide support for a lid stack component, as described further below. Additionally, the first lid plate 405 may define a second aperture 420 that may at least partially define a pumping channel from an overlying component, as described below. The second aperture 420 may be axially aligned with the aperture 315 of the chamber body 305 described above.

[0037]

[0047] 5 is a schematic partial isometric view of a chamber system 300 according to some embodiments of the present technology. This view may illustrate a partial cross section through two processing regions and a portion of a transfer region of the chamber system. For example, the chamber system 300 may be a quad section of the processing system 100 described above and may include any of the components or systems described above.

[0038]

[0048] The chamber system 300, as illustrated throughout the figures, may include a chamber body 305 defining a transfer region 502 including a substrate support 310 extending therein and which may be vertically translatable as described above. A first lid plate 405 may be seated on the chamber body 305 and define apertures 410 that form access for a processing region 504 formed with additional chamber system components. A lid stack 505 may be seated around or at least partially within each aperture, and the chamber system 300 may include multiple lid stacks 505, including a number of lid stacks equal to the number of apertures 410 among the plurality of apertures. Each lid stack 505 may be seated on the first lid plate 405 and may be seated on a shelf formed by a recessed ledge penetrating a second surface of the first lid plate. The lid stacks 505 may at least partially define the processing region 504 of the chamber system 300.

[0039]

[0049] As shown, the processing region 504 may be vertically offset from the transfer region 502 but may be fluidly connected to the transfer region. Additionally, a processing region may be isolated from other processing regions. A processing region may be fluidly connected to other processing regions from below through the transfer region, but may be fluidly isolated from each other processing region from above. Each lid stack 505 may also be aligned with a substrate support in some embodiments. For example, as shown, lid stack 505a may be aligned over substrate support 310a, and lid stack 505b may be aligned over substrate support 310b. When elevated to an operational position, such as the second position, the substrate supports can deliver substrates for individual processing in the separate processing regions. When in this position, each processing region 504 may be at least partially defined from below by the associated substrate support in the second position, as described further below.

[0040]

[0050] FIG. 5 also illustrates embodiments that may include a second lid plate 510 for the chamber system. The second lid plate 510 may be coupled to each of the lid stacks that may be positioned between the first lid plate 405 and the second lid plate 510 in some embodiments. As described below, the second lid plate 510 may facilitate access to components of the lid stack 505. The second lid plate 510 may define a plurality of apertures 512 therethrough. Each aperture of the plurality of apertures may be defined to provide fluid access to a particular lid stack 505 or processing region 504. In some embodiments, a remote plasma unit 515 may optionally be included in the chamber system 300 and may be supported on the second lid plate 510. In some embodiments, the remote plasma unit 515 may be fluidly coupled to each aperture 512 of the plurality of apertures therethrough. Isolation valves 520 may be included along each fluid line to provide fluid control to each individual processing region 504. For example, as shown, aperture 512a may provide fluid access to lid stack 505a. Aperture 512a may also be axially aligned with one of the lid stack components, and in some embodiments, substrate support 310a, such that each of the components associated with an individual processing region may be axially aligned, such as along a central axis passing through either the substrate support or the component associated with the particular processing region 504. Similarly, aperture 512b provides fluid access to lid stack 505b and in some embodiments may include and be aligned axially with a component of the lid stack as well as substrate support 310b.

[0041]

[0051] 6 is a schematic top plan view illustrating one embodiment of a semiconductor processing system 600 in accordance with some embodiments of the present technology. The illustration may include components of any of the systems previously shown and described, and may also illustrate additional aspects of any of the aforementioned systems. It should also be understood that the illustration may illustrate example components such as those found in any of the quad sections 109 described above.

[0042]

[0052] The semiconductor processing system 600 can include a lid plate 605 that can be similar to the second lid plate 510 described above. For example, the lid plate 605 can define multiple apertures similar to the apertures 512 that provide access to multiple processing chambers and processing regions positioned below the lid plate 605. Each aperture of the multiple apertures can be defined to provide fluid access to a particular lid stack, processing chamber, and / or processing region.

[0043]

[0053] One or more fluid diverters 610 may sit on the top surface of the lid plate 605. For example, the fluid diverter 610 may be centered between the apertures in the lid plate 605. When multiple fluid diverters 610 are provided, the fluid diverters 610 may be stacked vertically one on top of the other. Such a configuration may allow for a reduced footprint for the fluid diverters 610 while allowing for an increase or decrease in the number of different gas sources coupled to the chamber, as described in more detail below. In some embodiments, one or more polymer and / or other insulating spacers, such as a PEEK spacer, may be provided between the bottom surface of the most downstream fluid diverter 610 and the lid plate 605. The spacer may help reduce heat transfer between the most downstream fluid diverter 610 and the lid plate 605, which may help improve process conditions (e.g., by reducing the amount of power required to heat the various fluid diverters 610) and / or reduce power consumption of the system 600. Each fluid flow diverter 610 may be fluidly connected to a separate input weld 615 or other fluid line that delivers gases, such as precursors, plasma effluent, and / or purge gases, from a gas source to the fluid flow diverter 610. Each fluid flow diverter 610 may be fluidly connected to a separate fluid source such that different gases and / or liquids flow through each fluid flow diverter 610. For example, each input weld 615 may extend vertically from a fluid source (such as a gas panel) positioned below the lid plate 605 and pass through a feed-through plate. A portion of the input weld 615 above the feed-through plate may be bent horizontally to direct the fluid toward the fluid flow diverter 610. In some embodiments, some or all of the input welds 615 may be disposed within a heater jacket, which helps prevent heat loss along the length of the input welds 615.

[0044]

[0054] As described further below, each fluid divider 610 can receive fluid from a respective input weld 615 and can evenly divide the gas flow to multiple fluid outputs, each joined with a respective one of multiple valves 620. The valves 620 can control the flow of each fluid to a predetermined processing region. Each processing region can include its own set of dedicated valves 620. Multiple valves 620 (e.g., one for each fluid divider 610) can be coupled to each processing region and can be arranged in series so that any combination of one or more fluids can be mixed and selectively delivered to a processing region using only a single delivery line 625. For example, actuation of the valves 620 at each position can control whether purge fluids and / or process fluids are mixed and / or flowed separately to the respective processing chambers. Each delivery line 625 (which can be a weld in some embodiments) can deliver fluid to an output manifold 630 associated with a particular processing chamber. For example, an output manifold 630 may be positioned over each aperture formed in the lid plate 605 and may be fluidly coupled to the lid stack components to deliver one or more gases to the processing region of a respective processing chamber. In some embodiments, one or more of the fluid diverters 610 may include a bypass lumen and a bypass outlet that may be coupled to a bypass line 635. The bypass line 635 may be used to bypass a fluid (often a liquid) from the processing region during one or more processing steps.

[0045]

[0055] FIG. 7 is a schematic isometric view of one fluid flow diverter 610. The fluid flow diverter 610 can include a body 616 having a top surface 612 and multiple side surfaces 614. In some embodiments, the fluid flow diverter 610 can be a monolithic structure with any lumens and / or other apertures machined into the structure. Such a design can eliminate the need for electron beam welding and / or other joining techniques, which can result in gaps that can create gas leakage and / or uniformity issues. In some embodiments, each lumen / aperture machined into the fluid flow diverter 610 can be drilled or otherwise formed at an angle that is at least substantially perpendicular (e.g., within 10 degrees, within 5 degrees, within 3 degrees, within 1 degree, or less) to the outer surface on which the lumen / aperture is formed. Each lumen can be at least substantially linear / straight. Such a design can improve manufacturability and may help improve design tolerances and flow uniformity through the fluid flow diverter 610. As shown, the fluid diverter 610 is generally octagonal in shape (with a recessed side including two additional small sides that define the recessed distance) and has eight primary sides 614, although in various embodiments other numbers of sides 614 may be utilized to meet the needs of a particular application. By way of example only, the number of sides may be reduced in systems having fewer than four processing chambers and increased in systems having four or more processing chambers. The number of sides may be selected so that multiple fluid outlets each extend through a separate side 614 of the fluid diverter 610.

[0046]

[0056] The fluid flow diverter 610 may be joined to one of the input welds 615, as shown in FIG. 6 . For example, the fluid flow diverter 610 may define a fluid inlet 602 that may be coupled to the outlet end of one of the input welds 615, thereby allowing gas to flow from each gas source through the input welds 615 and into the fluid flow diverter 610. In some embodiments, the fluid inlet 602 may extend through one of the sides 614 of the fluid flow diverter 610. The fluid flow diverter 610 may define an inlet lumen 603 extending between the fluid inlet 602 and a hub 604 that divides the flow from the fluid inlet 602 into multiple outlet lumens 606 defined in the body 616. The hub 604 may be located proximate the center of the body 606 in some embodiments. The outlet lumens 606 may each extend from the hub 604 to one of multiple fluid outlets 608. In some embodiments, each fluid outlet 608 may extend through one of the side surfaces 614. For example, each fluid outlet 608 may extend through a different side surface 614. This may allow each outlet lumen 606 to have the same length (e.g., the distance from the hub 604 to a respective one of the fluid outlets 608), which may help improve the uniformity of flow conductance to each chamber coupled to the fluid flow diverter 610. Additionally, by positioning the fluid inlets 602 and fluid outlets 608 to extend through the side surfaces 614 of the fluid flow diverter 610 (e.g., the fluid inlets 602 or fluid outlets 608 do not extend through the top surface 612 or bottom surface of the body 616), multiple fluid flow diverters 610 may be stacked vertically, one on top of the other, which may reduce the footprint of the fluid flow diverter 610 on the lid plate 605.

[0047]

[0057] As shown, four outlet lumens 606 are fluidly coupled to the fluid inlet 602 and extend radially outward from the hub 204 of the fluid flow divider 610 to split the flow from the input weld 615 and deliver the fluid to four (or other number based on the number of processing chambers / regions included in the system 600) via different fluid outlets 608. The number of outlet lumens 606 and fluid outlets 608 may, in some embodiments, correspond to the number of processing chambers / regions included in the system 600, such that the fluid flow to each processing chamber / region passes through a separate, dedicated outlet lumen 606 and fluid outlet 608. The bypass lumen 622 may have the same or a different length and / or diameter as the outlet lumens 606.

[0048]

[0058] It should be understood that the arrangement of fluid inlet 602, fluid outlet 608, and fluid lumen 606 represents only a single embodiment of fluid flow diverter 610, and that numerous variations are possible in the arrangement and orientation of fluid inlet 602, fluid outlet 608, and / or fluid lumen 606. Furthermore, gas lumen 606 may be arranged to provide any number of flow paths. Fluid flow diverter 610 can be designed to accommodate any number of chambers / processing regions, allowing a single fluid source to deliver equal flows of fluid to any number of processing chambers / regions.

[0049]

[0059] In some embodiments, the fluid flow diverter 610 can include one or more heat sources. For example, one or more heater cartridges 624 can be coupled to and / or embedded within the body of the fluid flow diverter 610. In some embodiments, the number and arrangement of the heater cartridges 624 can be selected so that each outlet lumen 606 is equidistant from its respective heater cartridge 624, thereby providing a uniform temperature gradient across each outlet lumen 606 of the fluid flow diverter 610. For example, as shown, two heater cartridges 624 are provided, each positioned between two adjacent outlet lumens 606, and the heater cartridges 624 are equidistant from the two adjacent outlet lumens 606 such that each outlet lumen 606 is the same distance from the heater cartridge 624. Providing a heat source within the fluid flow diverter 610 can provide tighter temperature control to the system 600, thereby improving the quality and uniformity of the film deposition process. For example, improved temperature control (e.g., improved heating) can help ensure that gases flowing through welds, the fluid diverter 610, and / or other delivery channels of the processing system remain fully vaporized with less risk of condensation within the fluid path, which can help provide better gas delivery uniformity from chamber to chamber. Additionally, because a heater jacket may not be able to completely prevent all heat loss from the fluid as it travels from the gas panel (or other fluid source) to the respective chamber / processing region, the use of one or more heat sources in the fluid diverter 610 can help counteract such heat loss. The heat sources may heat the fluid diverter 610 to temperatures of about 75°C or higher, about 100°C or higher, about 125°C or higher, about 150°C or higher, about 175°C or higher, about 200°C or higher, or higher.

[0050]

[0060] 7C , the junction between the fluid outlets 608 and the welds or other fluid lines delivering fluid to the valves 620 and output manifold 630 can include orifices 626 that choke the gas flow and equalize the flow conductance to each chamber / processing region (e.g., so that flow to each chamber is divided substantially equally within a predetermined flow rate range). The orifices 626 can be formed in choke plates 628 or other materials that define orifices 626 (e.g., apertures) having reduced diameters for each one of the outlet lumens 606. As shown, the choke plate 628 is secured between the fluid outlets 608 of the fluid flow divider 610 and the fluid lines 632 delivering fluid to the valves 620 and output manifold 630. The choke plate 628 can be received and secured within slots and / or recesses formed in each fluid outlet 608. In some embodiments, one or more O-rings 644 may be used to seal the junction between the body of the choke plate 628 and the surfaces of the fluid diverter 610 and / or fluid line 632 to prevent any fluid flowing through the choke plate 628 from leaking from the junction. The choke plate 628 may define a central orifice 626 having a diameter smaller than the diameter of the fluid lumen 606. As shown, the upstream side of the central orifice 626 may have a smaller diameter than the downstream side of the central orifice 626. For example, the diameter of the central orifice 626 may taper and / or increase sharply from the upstream side to the downstream side of the choke plate 628. In other embodiments, the central orifice 626 may have a constant diameter throughout the thickness of the choke plate 628. The reduced diameter of the central orifice 626 relative to the diameter of the fluid lumen 606 allows the central orifice 626 to act as a passive flow control device that helps ensure that the flow conductance to each chamber / processing region is substantially uniform. The orifice 626 may also allow downstream components (including valves, output welds, manifolds, lid stacks, etc.) to be changed or replaced without requiring further flow adjustments.Such changes can be made without further flow rate adjustments as long as the pressure upstream of choke plate 628 remains the same at each junction of fluid flow divider 610 and fluid line 632, which can be achieved by maintaining the same size of central orifice 626 at each junction. The choke point provided by central orifice 626 is such that the amount of gas flowing through the choke point depends only on the pressure upstream of central orifice 626, such that the flow rate through central orifice 626 is a function of the upstream pressure only.

[0051]

[0061] O-rings or gaskets may be seated between each component of system 600. In particular, O-rings or gaskets may be seated between various gas line connections, which in some embodiments may help seal the component connections and prevent gas leakage. It will be appreciated that various types of orifices and / or connections may be used to control the flow of fluid through fluid diverter 610. For example, orifices may include machined fittings, vacuum face seal fitting (VCR) gaskets, and / or other fittings.

[0052]

[0062] In the process, fluid is flowed into fluid flow divider 610 through fluid inlet 602, for example from a gas panel or other fluid source through an inlet line (such as input weld 615). The fluid flows through inlet lumen 603 to hub 604, where the fluid is split into multiple different streams, with each stream flowing through a different outlet lumen 606. Fluid can flow through each outlet lumen 606 and through an orifice 626 in each fluid outlet 608, with the fluid flow rate and fluid capacity through each of the orifices 626 and fluid outlets 608 being equal.

[0053]

[0063] As discussed above, additional components can be used to fluidly couple and control the flow from the fluid outlets 608 of the fluid diverters 610 to the output manifold 630. FIG. 8 is a partial schematic isometric view showing multiple valves 620 interfaced between multiple fluid diverters 610 and the output manifold 630. As shown, five fluid diverters 610 are disposed on a lid plate 605, with the fluid diverters 610 stacked vertically. The system 600 can include any number of fluid diverters 610. For example, the system 600 can include at least one fluid diverter, at least two fluid diverters, at least three fluid diverters, at least four fluid diverters, at least five fluid diverters, at least six fluid diverters, at least seven fluid diverters, at least eight fluid diverters, at least nine fluid diverters, at least ten fluid diverters, or more. Each fluid diverter 610 can receive a different fluid from a gas source (e.g., a gas panel). The fluids can include one or more inert purge gases, one or more precursors, and / or one or more other process or cleaning gases / liquids, and the various fluids are coupled to the fluid flow distributors 610 in any arrangement. As shown, the bottom-most fluid flow distributor 610 is coupled to an inert purge gas source, and the remaining fluid flow distributors 610 are each coupled to a different precursor. Fluid lines 632 can extend between, and fluidly couple, each fluid outlet 608 to a different valve block 634, such that each fluid flow distributor 610 is directly coupled to a different valve block 634 and valve 620 (e.g., the number of valve blocks 634 and valves 620 in each chamber / processing region can match the number of fluid flow distributors 610). As best shown in FIG. 8A , each valve block 634 can define a lumen 636 extending between the inlet and the valve interface. Valves 620 may be positioned at the valve junctions to control the flow of each fluid to the output manifold 630 .

[0054]

[0064] In some embodiments, the valves 620 and valve blocks 634 for each output manifold 630 may be arranged in series, with the last valve block 634 in the series connected to a single delivery line 625 that delivers fluid to the output manifold 630 through a single inlet of the output manifold. This arrangement may allow any combination of one or more of the fluids associated with the various fluid flow distributors 610 to flow through the single delivery line 625 to the output manifold 630 (and associated chambers / processing regions). For example, each valve 620 associated with a given output manifold 630 may be in an open or closed position. Opening the valve 620 may allow fluid from the particular fluid flow distributor 610 to pass to the output manifold 630. When a single valve 620 is open, only one fluid may flow to the output manifold 630, but opening multiple valves 620 may allow multiple fluids to mix and flow through the delivery line 625 to the output manifold 630. In the illustrated embodiment, a purge gas valve 620a is positioned upstream of multiple (here, four) precursor valves 620b. Once fluid is flowing into the output manifold 630 and corresponding chamber / processing region, the purge gas valve 620a can be opened to deliver an inert purge gas through the remaining valves 620b / valve block 634, creating a positive pressure through the series of valves 620 / valve block 634. This positive pressure can help prevent backflow of precursors flowing through the open precursor valves 620b and can also help prevent dead volumes. Any combination of the precursor valves 620b can be opened to introduce one or more precursors into the positive pressure flow of purge gas, allowing the mixed fluid to flow into the output manifold 630 and chamber / processing region.

[0055]

[0065] In the illustrated embodiment, the purge valve 620a may be a two-way valve and each of the precursor valves 620b may be a three-way (e.g., three-port) valve, although other configurations are possible in various embodiments. The various valve blocks 634 may include a two-way valve block 634a that allows fluid to flow along a flow path having a single axis and a three-way valve block 634b that allows fluid to flow along two intersecting flow paths having different axes. The axes of the three-way valve blocks 634b may be orthogonal or at some other angle relative to each other. As shown, the purge valve 620a is coupled to the two-way valve block 634a, and the precursor valves 620b are each coupled to a respective three-way valve block 634b. Each three-way valve block 634b may have the same structure, which may allow the number of fluid diverters 610, three-way valve blocks 634b (one for each fluid outlet 608 per fluid diverter 610 removed), and precursor valves 620b (one for each fluid outlet 608 per fluid diverter 610 removed), as well as the number of precursors, to be adjusted simply by adding or removing intervening fluid lines (e.g., welds, etc.). This provides a modular approach that allows the number of precursors available for a process step to be easily increased or decreased by adding or removing a few modular components.

[0056]

[0066] Each valve block 634 may be connected to an adjacent valve block 634 via a connecting block 638, which may define a lumen 642 that may connect the outlet of one valve 620 and / or valve block 634 to the inlet of another valve 620 and / or valve block 634. The connecting blocks 638 may all have the same structure (which may improve the modularity of the system 600), except for the most downstream connecting block 638a, which may be connected to a single delivery line 625.

[0057]

[0067] 8 and 8A illustrate the connections between one fluid outlet 608 of each fluid flow divider 610 and one output manifold 630, it will be understood that each output manifold 630 of the system 600 can include a similar arrangement of valves 620 and valve blocks 634 that interface the output manifold 630 with a particular set of fluid outlets 608 of the fluid flow dividers 610 of the system 610. It will be understood that the arrangement of fluid flow dividers 610, valves 620, valve blocks 634, and output manifold 630 described above is provided by way of example only, and that numerous variations exist.

[0058]

[0068] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0059]

[0069] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the technology, some well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the technology.

[0060]

[0070] Where a range of values ​​is provided, it is understood that each intervening value, to the smallest fraction of the unit of the lower limit, between the upper and lower limit of that range is also specifically disclosed, unless the context clearly dictates otherwise. Any narrower range between any stated value or unstated intervening value in a stated range and any other stated or intervening value in that stated range is also included. The upper and lower limits of these smaller ranges may independently be included or excluded, and each range in which either or both limits are included in the smaller ranges is also included within the technology, subject to any specifically excluded limits in the stated range. Where a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0061]

[0071] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to a "heater" includes a plurality of such heaters, a reference to an "aperture" includes a reference to one or more apertures and equivalents thereof known to those skilled in the art, and so forth.

[0062]

[0072] Also, as used in this specification and the claims that follow, the terms "comprise," "comprising," "contain," "containing," "include," and "including" specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A semiconductor processing system comprising: A lid plate; a plurality of processing regions disposed below the lid plate; at least one fluid diverter seated on the lid plate, each fluid diverter including a top surface and a plurality of side surfaces, each fluid diverter comprising: a fluid inlet and a plurality of fluid outlets, each of which extends through at least one of the plurality of side surfaces; an inlet lumen extending from the fluid inlet to a central hub; a plurality of outlet lumens, each extending from the central hub to a respective one of the plurality of fluid outlets, each having the same length; at least one fluid flow divider defining a a plurality of output manifolds seated on the lid plate, each output manifold fluidly coupled to a respective one of the plurality of processing regions; a plurality of valves, at least one valve fluidly coupled between each fluid outlet and a respective one of the plurality of output manifolds; A semiconductor processing system comprising:

2. the at least one fluid flow diverter comprises a plurality of fluid flow diverters; the semiconductor processing system comprising a plurality of fluid sources, each of the plurality of fluid sources fluidly coupled to the fluid inlet of one of the plurality of fluid diverters; 10. The semiconductor processing system of claim 1.

3. One of the plurality of fluid sources includes a purge gas source. at least one of the plurality of fluid sources includes a precursor fluid source; 3. The semiconductor processing system of claim 2.

4. The semiconductor processing system of claim 2 , wherein the plurality of fluid flow dividers are arranged in a vertical stack.

5. the plurality of valves including a plurality of valves for each fluid outlet; the plurality of valves for fluid gas outlets are arranged in series with one another; 10. The semiconductor processing system of claim 1.

6. the plurality of valves for each fluid outlet include a purge valve and at least one precursor valve; the purge valve is positioned upstream of each of the at least one precursor valve; 6. The semiconductor processing system of claim 5.

7. 6. The semiconductor processing system of claim 5, wherein the plurality of valves for each fluid outlet and a respective one of the plurality of output manifolds are connected by a single flow path.

8. 6. The semiconductor processing system of claim 5, wherein a number of the plurality of valves for each fluid outlet matches a number of the plurality of fluid diverters.

9. The semiconductor processing system of claim 1 , wherein each fluid diverter defines a bypass lumen fluidly connected to the central hub.

10. 10. The semiconductor processing system of claim 1, wherein each of said plurality of fluid outlets includes an orifice having a smaller diameter than an associated one of said plurality of outlet lumens.

11. 2. The semiconductor processing system of claim 1, wherein a number of said plurality of fluid outlets of each said fluid flow divider corresponds to a number of said plurality of processing regions.

12. 1. A fluid flow divider comprising: a body having a top surface and a plurality of side surfaces, a fluid inlet and a plurality of fluid outlets, each of which extends through at least one of the plurality of side surfaces; an inlet lumen extending from the fluid inlet to a central hub; a plurality of outlet lumens, each extending from the central hub to a respective one of the plurality of fluid outlets, each having the same length; The body defines A fluid flow divider comprising:

13. At least one heater cartridge disposed within the body The fluid flow diverter of claim 12 further comprising:

14. 14. The fluid flow diverter of claim 13, wherein each of the plurality of outlet lumens is positioned equidistant from a respective one of the at least one heater.

15. The fluid flow diverter of claim 12 , wherein the body defines a bypass lumen fluidly connected to the central hub.

16. The fluid flow diverter of claim 12 , wherein each of the plurality of fluid outlets includes an orifice having a smaller diameter than an associated one of the plurality of outlet lumens.

17. The fluid flow diverter of claim 12 , wherein each of the plurality of outlet lumens defines a straight flow path.

18. The fluid flow diverter of claim 12 , wherein the body defines four fluid outlets and four outlet lumens.

19. the fluid inlet or fluid outlet does not extend through the top or bottom surface of the body; 13. The fluid flow diverter of claim 12.

20. 1. A semiconductor processing system comprising: A lid plate; a plurality of processing regions disposed below the lid plate; at least one fluid diverter seated on the lid plate, each fluid diverter including a top surface and a plurality of side surfaces, each fluid diverter comprising: a fluid inlet and a plurality of fluid outlets, each extending through at least one of the plurality of sides, the number of the plurality of fluid outlets corresponding to the number of the plurality of processing regions; an inlet lumen extending from the fluid inlet to a central hub; a plurality of outlet lumens, each extending from the central hub to a respective one of the plurality of fluid outlets, each having the same length; at least one fluid flow divider defining a A semiconductor processing system comprising:

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