Baffles to provide uniform process gas flow over the substrate and around the pedestal

Abstract

The substrate processing chamber includes a well, a pedestal disposed within the well, and a baffle disposed within the well around the pedestal. The well is defined by a bottom and a sidewall extending vertically upward from the bottom. The well includes a plurality of exhaust ports near the bottom. The pedestal includes a base and a stem. The baffle includes a sidewall and a plurality of sets of openings in the sidewall. The baffle is configured to direct a flow of gas supplied to the substrate processing chamber around the periphery of the pedestal, from around the base of the pedestal toward the stem of the pedestal, through the plurality of sets of openings in the sidewall of the baffle, and toward the plurality of exhaust ports.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 439,882, filed January 19, 2023. The entire disclosures of the above-referenced applications are incorporated herein by reference. [Technical Field]

[0002] FIELD OF THE DISCLOSURE The present disclosure relates generally to substrate processing systems, and more particularly to a baffle for providing uniform process gas flow over a substrate and around a pedestal in a substrate processing system. [Background technology]

[0003] The Background Art set forth herein is intended to present the contents of the present disclosure generally, and the inventions of the presently named inventors are not admitted expressly or impliedly as prior art to the present disclosure to the extent described in this Background Art section and in aspects of the description that are not prior art at the time of filing.

[0004] Atomic layer deposition (ALD) is a thin-film deposition technique that uses a sequence of gas-chemical processes to deposit a thin film on a material surface (e.g., the surface of a substrate such as a semiconductor wafer). Most ALD processes use at least two chemicals, called precursors (reactants), that react with the material surface, one precursor at a time, in a self-limiting sequence. For example, a typical ALD process involves a series of dose and purge steps that are repeated in succession. Repeated exposure to different precursors gradually deposits a thin film on the material surface.

[0005] Thermal ALD (T-ALD) processes are typically performed in a heated processing chamber. The processing chamber is maintained at subatmospheric pressure using a vacuum pump and controlled inert gas flow. The substrate to be coated is placed in the processing chamber and allowed to equilibrate to the temperature of the processing chamber before the ALD process begins. Plasma-enhanced ALD (PEALD) processes use a plasma during the dosing step. The plasma may be generated in-situ within the processing chamber. Alternatively, the plasma may be generated remotely from the processing chamber and delivered to the processing chamber. Summary of the Invention

[0006] The substrate processing chamber includes a well, a pedestal disposed in the well, and a baffle disposed within the well around the pedestal. The well is defined by a bottom and a sidewall extending vertically upward from the bottom. The well includes a plurality of exhaust ports near the bottom. The pedestal includes a base and a stem. The baffle includes a sidewall and a plurality of sets of openings in the sidewall. The baffle is configured to direct a flow of gas supplied to the substrate processing chamber around the pedestal from around the base of the pedestal, toward the stem of the pedestal, and through the set of openings in the sidewall of the baffle toward the plurality of exhaust ports.

[0007] In a further feature, the apertures in at least one of the sets of apertures have a different size and shape than the apertures in at least one other of the sets of apertures.

[0008] In a further feature, at least one of the sets of apertures has a different size and shape than at least one other of the sets of apertures.

[0009] In a further feature, a first aperture in a first set of aperture sets has a different size and shape than a second aperture in a second set of aperture sets.

[0010] In a further feature, the baffle has the same height as the well.

[0011] In a further feature, the well and the baffle are cylindrical and the baffle has a smaller diameter than the well.

[0012] In a further feature, the well sidewall and the baffle are cylindrical. The bottom edge of the baffle sidewall is located at the bottom of the well. The outer diameter of the baffle sidewall is less than its inner diameter.

[0013] In a further feature, the sidewalls of the well and the baffle have the same height.

[0014] In a further feature, the baffle includes an annular flange and a plurality of arcuate flanges. The annular flange extends radially outward from an upper end of the baffle sidewall. The annular flange is sealingly disposed on the upper end of the well sidewall. The plurality of arcuate flanges extend radially outward from the baffle sidewall. The arcuate flanges are located a predetermined distance from a bottom end of the baffle sidewall.

[0015] In a further feature, the predetermined distance is equal to or greater than the height of the outlet.

[0016] In a further feature, the arcuate flanges have different arc lengths.

[0017] In a further feature, the arc length of the arcuate flange is based on the location of the outlet.

[0018] In a further feature, the arcuate flange sealingly mates with the annular flange and the sidewall of the well forming a flow path between the arcuate flange, the sidewall of the baffle and the sidewall of the well.

[0019] In a further feature, gas flowing toward the stem portion of the pedestal enters the flow passage through a set of openings in the sidewall of the baffle and flows toward the plurality of outlets.

[0020] In a further feature, the baffle includes a plurality of connecting flanges extending radially outward from its sidewall, the connecting flanges being located a predetermined distance from the bottom of the baffle sidewall, the connecting flanges connecting the arcuate flanges to one another.

[0021] In a further feature, the connecting flange is arcuate. The connecting flange has a radial width that is smaller than the arcuate flange.

[0022] In a further feature, the connecting flange is arcuate. The connecting flange has a smaller arc length than the arcuate flange.

[0023] In a further feature, the connecting flange is arcuate. The connecting flange has an arc length that is less than the width of the outlet.

[0024] In a further feature, the arcuate flange and the connecting flange are coplanar.

[0025] In a further feature, the arcuate flange and the connecting flange form a continuous annular structure.

[0026] In a further feature, the baffle is monolithic.

[0027] In a further feature, the connecting flange is proximate to the outlet, at least one of the sets of apertures is located proximate to the connecting flange and the outlet, and at least one other of the sets of apertures is located away from the outlet.

[0028] In a further feature, the openings in at least one set are smaller than the openings in at least one other set.

[0029] In a further feature, the openings in at least one set have a different size and shape than the openings in at least one other set.

[0030] In a further feature, at least one set has a different size than at least one other set.

[0031] In a further feature, at least one set has a different shape than at least one other set.

[0032] In a further feature, at least one set is vertically offset relative to at least one other set of sidewalls of the baffle.

[0033] In a further feature, the gas flow around the pedestal is uniform regardless of the location of the well outlet.

[0034] In a further feature, the substrate processing chamber further comprises a substrate disposed on a pedestal, and the gas flow is uniform over the substrate regardless of the location of the well outlet.

[0035] In further features, the substrate processing chamber further comprises a showerhead and a vacuum pump, the showerhead disposed above the pedestal to supply gases to the substrate processing chamber during processing of a substrate disposed on the pedestal, and the vacuum pump coupled to the exhaust port to evacuate gases from the substrate processing chamber during processing.

[0036] In further features, the substrate processing chamber further comprises a showerhead and a vacuum pump, the showerhead disposed above the pedestal to supply gas to the substrate processing chamber during cleaning, and the vacuum pump coupled to the exhaust port to evacuate gas from the substrate processing chamber during cleaning.

[0037] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for illustrative purposes only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0038] The present disclosure will become better understood from the detailed description and the accompanying drawings.

[0039] [Figure 1] 1 illustrates an example of a substrate processing system including a processing chamber with a baffle according to the present disclosure.

[0040] [Figure 2A] A well of a station in a processing chamber with a baffle. [Figure 2B] Uniform gas flow provided by baffles within the processing chamber.

[0041] [Figure 3] FIG. 1 is a perspective view of a baffle showing the structure, shape, and geometry of the baffle.

[0042] [Figure 4] FIG. 1 is a front view of the baffle showing the construction, shape, and geometry of the baffle. [Figure 5] Rear view of the baffle showing the construction, shape, and geometry of the baffle.

[0043] [Figure 6] FIG. 1 is a right side view of the baffle showing the construction, shape, and geometry of the baffle. [Figure 7] FIG. 1 is a left side view of the baffle showing the construction, shape, and geometry of the baffle.

[0044] [Figure 8] FIG. 1 is a plan view of a baffle showing the structure, shape, and geometry of the baffle.

[0045] [Figure 9] Bottom view of the baffle showing the construction, shape, and geometry of the baffle.

[0046] [Figure 10] Bottom view of the baffle showing the construction, shape, and geometry of the baffle. [Figure 11]FIG. 1 is a cross-sectional view of a baffle showing the structure, shape, and geometry of the baffle. [Figure 12] FIG. 1 is a cross-sectional view of a baffle showing the structure, shape, and geometry of the baffle.

[0047] In the drawings, reference numbers may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0048] In most substrate processing systems (also called substrate processing tools), a processing chamber includes one or more stations. Each station includes a cylindrical well in which a pedestal and a showerhead are disposed for processing a substrate. Each well includes one or more outlets through which process gases supplied to the station are exhausted using a pump. The outlets are generally not uniformly (symmetrically) disposed in the well. Asymmetrical placement (e.g., location) of the outlets in the well can result in non-uniform process gas flow around the pedestal within the well. The non-uniform process gas flow around the pedestal affects the distribution of process gas at the surface of a substrate disposed on the pedestal during processing and over the edge of the pedestal.

[0049] The present disclosure provides a baffle disposed around the periphery of a pedestal to achieve uniform process gas flow over the substrate surface and around the pedestal. The baffle directs process gas flow from the edge of the pedestal toward the stem of the pedestal within the well, then redirects it collectively toward an exhaust port through various openings in the baffle. The baffle is designed (shaped) to ensure uniform process gas flow around the pedestal within the well, even when the exhaust ports are unevenly (asymmetrically) positioned within the well. Without the baffle, flow non-uniformity around the pedestal, and therefore the flow non-uniformity around the substrate, would not be sufficiently uniform, especially when the exhaust ports are unevenly (asymmetrically) positioned within the well. Flow non-uniformity causes uneven deposition on the substrate.

[0050] Baffles according to the present disclosure are generally cylindrical. Specifically, as described in more detail below, the baffle includes a cylindrical sidewall, an annular flange at the top end of the baffle, and a pair of semi-annular or arcuate flanges near the bottom end of the baffle's cylindrical sidewall. The baffle is positioned in the well around the pedestal so that the annular flanges are located at the top end of the well. The annular flanges seal the well and direct or direct process gas flowing downstream from the pedestal into the interior space of the baffle that surrounds the pedestal. The pair of arcuate flanges sealingly engage the inner sidewall of the well near the bottom of the well. The arcuate flanges prevent the baffle from tilting relative to the vertical axis of the well and ensure that the baffle is centered within the well.

[0051] The cylindrical side wall of the baffle includes multiple sets of openings. Each set of openings is a group of openings distributed over a specific region of the cylindrical side wall of the baffle. For example, the openings may include through-holes, slits (e.g., elongated openings), or a combination of holes and slits. For example, the first and second sets of openings may include through-holes drilled in a portion of the cylindrical side wall and be located along the cylindrical side wall at opposing positions (e.g., diametrically opposed positions). The third and fourth sets of openings may include slits (e.g., elliptical slits) drilled in the cylindrical side wall and be located along the cylindrical side wall at opposing positions (e.g., diametrically opposed positions). The positions of the first and second sets of openings may be 90 degrees apart from the positions of the third and fourth sets of openings.

[0052] The baffle is positioned within the well such that the space separating the two arcuate flanges is aligned with a respective outlet of the well, such that the space between the annular flange, the two arcuate flanges, and the interior sidewall of the well defines a flow path for process gas exiting the baffle through the openings toward the outlet.

[0053] The first and second sets of apertures with through-holes are located closer to the outlet than the third and fourth sets of apertures with slits. Process gas flowing downstream from the pedestal and routed through the baffle flows more through the third and fourth sets of apertures with slits, which are located farther from the outlet, than through the first and second sets of apertures with through-holes, which are located closer to the outlet. By providing more flow through the slits farther from the outlet and less flow through the through-holes closer to the outlet, the baffle achieves balanced and uniform gas flow around the pedestal and, thereby, around the substrate. Furthermore, the non-uniform placement of the apertures results in uniform process gas discharge. The uniformity of process gas flow achieved by the baffle improves deposition uniformity on the substrate. These and other features of the baffle are described in more detail below.

[0054] The present disclosure is organized as follows: An example of a substrate processing system including a processing chamber and baffle according to the present disclosure is shown and described generally with reference to FIG. 1. A cross-sectional view of a station well in a processing chamber including a baffle is shown and described in more detail with reference to FIGS. 2A and 2B. The structure of the baffle and uniform gas flow around the pedestal are shown and described with reference to FIGS. 2A and 2B. The geometry and various features of the baffle are shown and described in more detail with reference to FIGS. 2A-12.

[0055] FIG. 1 illustrates an example of a substrate processing system 100. The substrate processing system 100 includes a processing chamber 102. The processing chamber 102 typically includes multiple stations where substrates can be processed. For ease of illustration, only one station, including a baffle, is shown. Each station includes a pedestal 104 disposed in a well (e.g., well 105 shown in FIG. 2) and a showerhead 106. A substrate 108 is disposed on the pedestal 104 during processing. The showerhead 106 supplies one or more process gases to the processing chamber 102 during substrate processing.

[0056] The pedestal 104 includes a base 110 and a stem 112. The base 110 is generally cylindrical and has a larger diameter than the substrate 108. The stem 112 may be cylindrical or may have a "Y" shape with a flared or forked end of the "Y" attached to the base 110. The other end of the stem 112 is attached to the bottom of the processing chamber 102. The stem 112 has a smaller diameter than the base 110. A pedestal lift assembly 113 is coupled to the stem 112 to move the pedestal 104 relative to the showerhead 106.

[0057] The base 110 includes a heater 114 for heating the substrate 108. The base 110 also includes cooling channels (not shown) for circulating a coolant supplied by a coolant supply source 116 to regulate the temperature of the pedestal 104. The base 110 includes a temperature sensor 118 for sensing the temperature of the pedestal 104. The temperature sensor 118 is connected to a temperature regulator 119. The temperature regulator 119 regulates the temperature of the pedestal 104 by controlling the heater 114 and the flow of coolant from the coolant supply source 116 to the cooling channels in the base 110 based on the temperature sensed by the temperature sensor 118.

[0058] The showerhead 106 includes a base 120 and a stem 122. The base 120 is cylindrical and spans the entire substrate 108 radially. The base 120 has a diameter larger than the substrate 108. The base 120 includes a faceplate on its substrate-facing surface that includes a plurality of holes (not shown) that pass one or more process gases into the processing chamber 102 during substrate processing. The stem 122 is also generally cylindrical and has a smaller diameter than the base 120. A first end of the stem 122 is connected to a central portion of the base 120. A second end of the stem 122 is connected to a top plate of the processing chamber 102.

[0059] Although not shown, the base 120 may include a heater for heating process gases. The base 120 may also include cooling channels for circulating the coolant supplied by the coolant supply source 116 to regulate the temperature of the showerhead 106. The base 120 includes a temperature sensor 124 for sensing the temperature of the showerhead 106. The temperature sensor 124 is connected to a temperature controller 119. Based on the temperature sensed by the temperature sensor 124, the temperature controller 119 controls the heater and the flow of coolant from the coolant supply source 116 to the cooling channels in the base 120 to regulate the temperature of the showerhead 106.

[0060] The gas delivery system 130 supplies one or more gases to the processing chamber 102. The gas delivery system 130 includes multiple gas sources 132-1, 132-2, ..., 132-N (collectively, gas sources 132), where N is a positive integer. The gas sources 132 supply various gases, including process gases, purge gases, precursors, cleaning gases, etc. The gas delivery system 130 includes multiple valves 134-1, 134-2, ..., 134-N (collectively, valves 134). The valves 134 are connected to the gas sources 132 and control the flow of gases supplied by the gas sources 132.

[0061] Gas delivery system 130 includes a plurality of mass flow controllers (MFCs) 136-1, 136-2, ..., 136-N (collectively MFCs 136). MFCs 136 are connected to valves 134 and control the mass flow rates of gases supplied by gas sources 132 through valves 134. Gas delivery system 130 includes a manifold 138. Manifold 138 is connected to MFCs 136 and showerhead 106. Manifold 138 supplies gas to showerhead 106.

[0062] Some processes may use one or more vaporized precursors during substrate processing. Accordingly, although not shown, the substrate processing system 100 may further include a vaporized precursor supply source for supplying one or more vaporized precursors. The vaporized precursor supply source may be connected to a manifold 138. When the manifold 138 is used, the manifold 138 may supply the one or more vaporized precursors supplied by the vaporized precursor supply source to the showerhead 106.

[0063] In some processes, a plasma may be used during substrate processing. Although not shown, the substrate processing system 100 may further include a radio frequency (RF) power supply for supplying RF power to generate a plasma. For example, the RF power supply may supply RF power to a showerhead 106 that includes a grounded or floating pedestal 104. Alternatively, the RF power supply may supply RF power to a pedestal 104 that includes a grounded or floating showerhead. In either case, when one or more process gases are supplied to the processing chamber 102 through the showerhead 106, the RF power supplied by the RF power supply activates the process gases within the processing chamber 102 to generate a plasma between the showerhead and the substrate 108. In some processes, instead of generating a plasma within the processing chamber 102, a plasma may be generated outside the processing chamber 102 and supplied to the processing chamber 102.

[0064] A plurality of exhaust ports (e.g., exhaust port 103 shown in FIG. 2 ) are disposed in the processing chamber 102 around the lower periphery of the sidewall of the well 105. The exhaust ports 103 are coupled to a foreline 144 that is connected to the processing chamber 102. The substrate processing system 100 further includes a vacuum pump 140 that is coupled to the processing chamber 102 via the foreline 144 through a valve 142. The vacuum pump 140 maintains a pressure (e.g., a vacuum) within the processing chamber 102 during substrate processing. The vacuum pump 140 also evacuates process gases and reaction by-products from the processing chamber 102 during substrate processing and cleaning of the processing chamber 102.

[0065] The vacuum pump 140 also provides the vacuum clamping when a vacuum clamping is used to clamp the substrate 108 to the pedestal 104. Although not shown, the substrate can be clamped to the pedestal 104 using other clamping methods (e.g., electrostatic clamping provided by electrodes disposed on the base 110 of the pedestal 104, mechanical clamping, etc.). The processing chamber 102 further includes a controller 150. The controller 150 controls all of the elements of the substrate processing system 100 described above.

[0066] Processing chamber 102 further includes a baffle 160, which is only shown schematically in Figure 1. Baffle 160 is also cylindrical and is disposed in a cylindrical well 105 (shown in Figures 2A and 2B) of processing chamber 102. Baffle 160 is shown with reference to Figures 2A-12 and described in more detail below.

[0067] 2A and 2B show a cross-sectional view of well 105 and baffle 160 disposed in well 105, as well as the uniform gas flow provided by baffle 160 around pedestal 104. FIG. 2A shows a cross-sectional view of well 105 with baffle 160 and pedestal 104. FIG. 2B shows the uniform gas flow provided by baffle 160 around pedestal 104. In FIGS. 2A and 2B, elements identified by reference symbols already described with reference to FIG. 1 will not be described again for the sake of brevity. Additional elements shown in FIGS. 2A and 2B are described below.

[0068] The well 105 is generally cylindrical. Specifically, the well 105 has a right circular cylindrical shape and is hollow. The well 105 includes and is defined by a sidewall 105-1 and a bottom portion 105-2. The sidewall 105-1 of the well 105 is cylindrical (i.e., right circular cylindrical). The bottom portion 105-2 of the well 105 is generally disk-shaped. Specifically, the bottom portion 105-2 of the well 105 is annular and has a central hole through which the stem portion 112 of the pedestal 104 passes. The bottom portion 105-2 of the well 105 is parallel to the base 110 of the pedestal 104 and the substrate 108. The sidewall 105-1 of the well 105 extends vertically upward (along the vertical axis of the pedestal 104) from the bottom portion 105-2 of the well 105. The inner diameter (ID) of the well 105 is larger than the outer diameter (OD) of the base 110 of the pedestal 104 .

[0069] Before describing the baffle 160 in detail, an example geometry of the base 110 of the pedestal 104 will be described in detail with reference to Figures 2A and 2B. For example, in Figures 2A and 2B, the base 110 of the pedestal 104 includes an upper portion 111 and a lower portion 115. The upper portion 111 of the base 110 is cylindrical. The substrate 108 rests on the upper portion 111 of the base 110 during processing. The lower portion 115 of the base 110 extends downward from the bottom surface of the upper portion 111 toward the bottom surface of the processing chamber 102 as follows:

[0070] For example, the lower portion 115 of the base 110 has a trapezoidal cross-section. Specifically, in the illustrated example, the lower portion 115 of the base 110 tapers radially inward from the bottom surface of the upper portion 111 toward the stem portion 112 of the pedestal 104 a first distance. The lower portion 115 of the base 110 tapers downward toward the bottom surface of the processing chamber 102 a first distance. After the first distance, the lower portion 115 of the base 110 extends radially inward parallel to the upper portion 111. After the first distance, the lower portion 115 of the base 110 extends toward the stem portion 112 of the pedestal 104. As a result, the upper end of the lower portion 115 has the same OD as the upper portion 111, but the lower end of the lower portion 115 has a smaller diameter than the upper end of the lower portion 115.

[0071] The geometry of baffle 160 will now be described in more detail with reference to Figures 2A-12. Figures 2A and 2B show cross-sectional views of baffle 160. Figure 3 shows a perspective view of baffle 160. Figures 4 and 5 show front and rear views, respectively, of baffle 160. Figures 6 and 7 show right and left side views, respectively, of baffle 160. Figures 8 and 9 show top and bottom views, respectively, of baffle 160. Different elements of baffle 160 are shown and visible in different views of Figures 2A-12. Figures 2A-12 collectively show all of the elements or features of baffle 160 described below. Not all elements or features of baffle 160 are visible in each of Figures 2A-12. Only elements or features of baffle 160 that are visible in the views shown in Figures 2A-12 are labeled in Figures 2A-12. Therefore, in the following description of baffle 160, reference will be made to FIGS. 2A-12 as necessary to explain the structure and features of baffle 160.

[0072] Note that if the base of the pedestal 104 is perfectly cylindrical (i.e., both the upper portion 111 and the lower portion 115 of the base 110 are cylindrical), the geometry of the baffle 160 described below may be the same. The baffle 160 can direct gas flow as described below even if the base 110 of the pedestal 104 is perfectly cylindrical.

[0073] 2A and 2B, in general, in each station (shown in FIG. 1) of the processing chamber 102, the exhaust ports 103 are not uniformly (symmetrically) disposed within the well 105. The arrangement (e.g., location) of the exhaust ports 103 in the well 105 can result in non-uniform process gas flow around the pedestal 104 disposed in the well 105. The non-uniform process gas flow around the pedestal 104 within the well 105 affects the distribution of process gas over the surface of the substrate 108 and over the edge of the pedestal 104 during substrate processing. Therefore, a baffle 160 is disposed around the pedestal 104 to achieve uniform gas flow over the substrate 108 and around the pedestal 104.

[0074] 2A-12, the baffle 160 is designed (shaped) with features (e.g., openings) to achieve uniform gas flow over the substrate 108 and around the pedestal 104. The baffle 160 and its features are designed (shaped) to ensure uniform gas flow around the pedestal 104 regardless of the placement (location) of the exhaust ports 103. Without the baffle 160, the flow uniformity around the pedestal 104, and therefore the flow uniformity around the substrate 108, would not be sufficiently uniform. Non-uniformity in the flow would cause uneven deposition on the substrate 108.

[0075] The baffle 160 is generally cylindrical (i.e., right circular cylindrical) and hollow. Specifically, as described in more detail with reference to FIGS. 2A-12, the baffle 160 includes a cylindrical sidewall 162. That is, the cylindrical sidewall 162 has a right circular cylindrical shape. The upper end of the cylindrical sidewall 162 extends radially outward to form an annular flange 164 at the upper end of the baffle 160. A pair of semi-annular flanges or arcuate flanges (see elements 166-1 and 166-2 (collectively, arcuate flanges 166) in FIG. 3) are disposed near the bottom end of the cylindrical sidewall 162 of the baffle 160. The outer diameter of the cylindrical sidewall 162 of the baffle 160 is smaller than the inner diameter of the sidewall 105-1 of the well 105. The arcuate flanges 166 extend radially outward from near the cylindrical sidewall 162 of the baffle 160. Arcuate flange 166 extends parallel to annular flange 164. Arcuate flange 166 sealingly mates with sidewall 105-1 of well 105, as will be explained in more detail below.

[0076] The baffle 160 is positioned in the well 105 around the pedestal 104 such that its annular flange 164 rests on the upper edge of the sidewall 105-1 of the well 105. The OD of the annular flange 164 is larger than the OD of the sidewall 105-1 of the well 105. The annular flange 164 seals the well 105 and directs or directs process gas flowing downstream from the pedestal 104 into an interior space 168 of the baffle 160 that surrounds the pedestal 104.

[0077] An arcuate flange 166 of the baffle 160 sealingly fits against the inner sidewall of the well 105 near the bottom of the well 105. The OD of the arcuate flange 166 is equal to the ID of the sidewall 105-1 of the well 105. The OD of the arcuate flange 166 is less than the OD of the annular flange 164. The arcuate flange 166 of the baffle 160 prevents the baffle 160 from tilting relative to the vertical axis of the well 105 and ensures that the baffle 160 is centered within the well 105.

[0078] Outlets 103 are generally oval or rectangular (or have a generally elongated shape). For example, baffle 160 is configured to operate with two outlets 103 in well 105. However, the structure of baffle 160 described below may be extended to operate with any number of outlets 103. For example, the number of arcuate flanges 166 (and the number of arcuate flanges 167, described below), the arc lengths of arcuate flanges 166 and 167, and the number and type of opening sets (described below) in cylindrical sidewall 162 of baffle 160 may be configured depending on the number and location of outlets 103 in well 105.

[0079] The outlet 103 extends laterally and arcuately along the sidewall of the well 105 near the bottom of the well 105. Depending on the location of the outlet 103 in the well 105, the arcuate flanges 166 can have different arc lengths. For example, in the illustrated example, the first arcuate flange 166-1 can have a longer arc length than the second arcuate flange 166-2. The ends of the first arcuate flange 166-1 and the second arcuate flange 166-2 extend to the pair of outlets 103. For example, the first end of the first arcuate flange 166-1 extends to the first end of the first outlet 103, and the first end of the second arcuate flange 166-2 extends to the second end of the first outlet 103. The second ends of the first arcuate flange 166-1 and the second arcuate flange 166-2 extend to the first end and the second end of the second outlet 103, respectively.

[0080] The first arcuate flange 166-1 and the second arcuate flange 166-2 may be connected to one another by a second pair of arcuate flanges 167-1 and 167-2 (visible in FIGS. 9 and 10). As such, the arcuate flanges 167-1 and 167-2 are also referred to as connecting flanges 167-1 and 167-2. The arcuate flanges 167-1 and 167-2 (collectively, arcuate flanges 167) have the same ID as the first arcuate flange 166-1 and the second arcuate flange 166-2. The arcuate flanges 167-1 and 167-2 have a smaller OD than the first arcuate flange 166-1 and the second arcuate flange 166-2. The arcuate flanges 167-1 and 167-2 have a smaller radial width than the first arcuate flange 166-1 and the second arcuate flange 166-2. The arcuate flanges 167-1 and 167-2 may have an arcuate length greater than or equal to the width or arcuate length of the outlet 103.

[0081] First and second arcuate flanges 166-1 and 166-2, and arcuate flanges 167-1 and 167-2, form a continuous annular structure with a radially inward recess provided by arcuate flanges 167-1 and 167-2. Arcuate flanges 166 and 167 are coplanar (i.e., lie in the same plane on cylindrical side wall 162 of baffle 160). When baffle 160 is installed in well 105, arcuate flanges 167-1 and 167-2 are adjacent to outlet 103. Baffle 160, including cylindrical side wall 162, annular flange 164, first and second arcuate flanges 166-1 and 166-2, and arcuate flanges 167-1 and 167-2, is a monolithic structure (i.e., baffle 160 is manufactured as a single piece).

[0082] The cylindrical sidewall 162 of the baffle 160 includes multiple sets of apertures (e.g., as shown in FIG. 3 ). The apertures are drilled and located in the cylindrical sidewall 162 of the baffle 160 between the annular flange 164 and the arcuate flange 166. For example, the apertures may include through-holes, slits (e.g., elongated apertures), or a combination of holes and slits. For example, the first set of apertures 170-1 and the second set of apertures 170-2 (collectively, the first and second sets of apertures 170) may include through-holes drilled in a portion of the cylindrical sidewall 162 of the baffle 160. The first set of apertures 170-1 and the second set of apertures 170-2 may be located at diametrically opposed positions along the cylindrical sidewall 162 of the baffle 160. Depending on the location of the outlet 103, the first set of openings 170-1 and the second set of openings 170-2 may be located at opposite positions along a chord along the cylindrical side wall 162 of the baffle 160 that is smaller than the diameter of the cylindrical side wall 162 of the baffle 160.

[0083] Additionally, the third set of openings 172-1 and the fourth set of openings 172-2 (collectively, the third and fourth sets of openings 172) may comprise slits (e.g., elliptical slits) drilled in the cylindrical sidewall 162 of the baffle 160. The third set of openings 172-1 and the fourth set of openings 172-2 may be located at diametrically opposed positions along the cylindrical sidewall 162 of the baffle 160. Depending on the location of the exhaust outlet 103, the locations of the first set of openings 170-1 and the second set of openings 170-2 may be 90 degrees apart from the locations of the third set of openings 172-1 and the fourth set of openings 172-2. The locations of the first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 (collectively, the opening sets 170 and 172) depend on the location of the exhaust outlet 103, as described in more detail below.

[0084] The size of the through holes in the first set of openings 170-1 and the second set of openings 170-2 is smaller than the size of the slits in the third set of openings 172-1 and the fourth set of openings 172-2. The density of the through holes in the first set of openings 170-1 and the second set of openings 170-2 (i.e., the number of through holes per unit area in the first set of openings 170-1 and the second set of openings 170-2) is smaller than the density of the slits in the third set of openings 172-1 and the fourth set of openings 172-2 (i.e., the number of slits per unit area in the third set of openings 172-1 and the fourth set of openings 172-2).

[0085] Baffle 160 is positioned within well 105 so that the space separating the two arcuate flanges (i.e., arcuate flanges 167-1 and 167-2 near outlet 103) coincides with the location of each outlet 103 within well 105. The spaces between annular flange 164, two arcuate flanges 166, arcuate flanges 167-1 and 167-2 near outlet 103, and the inner sidewall of well 105 form flow channel 107 (shown in FIGS. 2A and 2B ). The radial width of flow channel 107 is equal to the difference between the OD of cylindrical sidewall 162 of baffle 160 and the ID of sidewall 105-1 of well 105. The radial width of flow channel 107 is also equal to the radial width of arcuate flanges 166-1 and 166-2 (i.e., the difference between the OD and ID of arcuate flanges 166-1 and 166-2).

[0086] Process gas flowing downstream from the base 110 of the pedestal 104 flows through the interior space 168 of the baffle 160. The process gas then flows through first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 into the flow passage 107 and toward and exits the exhaust port 103. The gas flow is indicated by arrows 180-1 through 180-12 in FIG. 2B and is described in more detail below. All other reference numerals shown in FIG. 2A have been omitted from FIG. 2B so as not to obscure FIG. 2B and to clearly illustrate the gas flow. Reference numerals shown in FIG. 2A are inferred to be present in FIG. 2B.

[0087] The first set of openings 170-1 and the second set of openings 170-2 that include through holes are located closer to the discharge port 103 than the third set of openings 172-1 and the fourth set of openings 172-2 that include slits. More of the process gas flowing downstream from the base 110 of the pedestal 104 and drawn into the interior space 168 of the baffle 160 flows into the flow path 107 through the third set of openings 172-1 and the fourth set of openings 172-2 that include slits and are located farther from the discharge port 103 than through the first set of openings 170-1 and the second set of openings 170-2 that include through holes and are located closer to the discharge port. By providing more flow through the slits of the third set of openings 172-1 and the fourth set of openings 172-2 that are farther from the outlet 103 and less flow through the through-holes of the first set of openings 170-1 and the second set of openings 170-2 that are closer to the outlet 103, the baffle 160 achieves a balanced and uniform gas flow around the pedestal 104 and thereby around the substrate 108. Furthermore, the non-uniform placement of the outlets 103 achieves a uniform exhaust of the process gas. The uniformity of the process gas flow achieved by the baffle 160 improves the uniformity of deposition on the substrate 108.

[0088] First through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 may comprise different types of openings drilled in cylindrical side wall 162 of baffle 160. For example, third set of openings 172-1 and fourth set of openings 172-2 may comprise through holes instead of slits, similar to first set of openings 170-1 and second set of openings 170-2, but the through holes in third set of openings 172-1 and fourth set of openings 172-2 would be larger in size (diameter) than the through holes in first set of openings 170-1 and second set of openings 170-2. For example, the first set of openings 170-1 and the second set of openings 170-2 may have slits, as may the third set of openings 172-1 and the fourth set of openings 172-2, but the slits in the first set of openings 170-1 and the second set of openings 170-2 will be smaller than the slits in the third set of openings 172-1 and the fourth set of openings 172-2.

[0089] Furthermore, in some examples, each of the first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 can comprise a combination of through holes and slits, with the through holes and slits of the first set of openings 170-1 and the second set of openings 170-2 being smaller than the through holes and slits of the third set of openings 172-1 and the fourth set of openings 172-2. Furthermore, the cylindrical side wall 162 of the baffle 160 may be provided with any number of opening sets with through holes and any number of opening sets with slits. The sizes and shapes of the through holes and slits may vary. For example, the through holes may be polygonal (e.g., circular, hexagonal, elliptical, rectangular, triangular, etc.), and the slits may be horizontal, vertical, angled, zigzag, stepped, or any other shape. The sizes and shapes of the openings (e.g., through holes and slits) within an opening set may also vary. Any of a variety of combinations may be used.

[0090] Additionally, the first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 can have different shapes and sizes, thereby providing different surface areas. For example, the shapes can be circular or polygonal (e.g., rectangular, triangular, hexagonal, etc.). The first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 can each have the same shape, different shapes, or any combination of shapes. The first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 can each have the same size, different sizes, or any combination of sizes. The first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 do not have to be coplanar in the cylindrical sidewall 162 of the baffle 160. For example, one or more of the first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 may be slightly above or below a plane in the center of cylindrical side wall 162 of baffle 160. That is, the first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 may be disposed along different planes in cylindrical side wall 162 of baffle 160, and thereby may be vertically offset from one another in cylindrical side wall 162 of baffle 160.

[0091] When installed in the well 105, the bottom end of the cylindrical sidewall 162 of the baffle 160 rests on the bottom 105-2 of the well 105. The annular flange 164 rests on the upper end of the well 105. The arcuate flanges 166 and 167 are located on the cylindrical sidewall 162 of the baffle 160 a predetermined distance above the bottom end of the cylindrical sidewall 162 of the baffle 160. The predetermined distance is equal to or greater than the height of the discharge port 103. The first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 are located on the cylindrical sidewall 162 of the baffle 160 between the annular flange 164 and the arcuate flanges 166 and 167. The height of the baffle 160 is the height of the cylindrical sidewall 162 of the baffle 160. The height of the baffle 160 is also the distance between the annular flange 164 and the bottom edge of the cylindrical side wall 162 of the baffle 160. The height of the baffle 160 is equal to the height (depth) of the well 105.

[0092] The baffle 160 does not contact any portion of the pedestal 104. The top end or annular flange 164 of the baffle 160 is at a level below the base of the upper portion 111 of the base 110 of the pedestal 104. The ID of the annular flange 164 of the baffle 160 surrounds the lower portion 115 of the base 110 of the pedestal 104. The ID of the annular flange 164 does not contact the lower portion 115 of the base 110 of the pedestal 104. Instead, a gap exists between the ID of the annular flange 164 (or the cylindrical sidewall 162 of the baffle 160) and the periphery of the lower portion 115 of the base 110 of the pedestal 104. The gap separates the ID of the annular flange 164 (or the cylindrical sidewall 162 of the baffle 160) and the lower portion 115 of the base 110 of the pedestal 104.

[0093] The baffle 160 promotes gas flow within the well 105, as shown in Figure 2B. Specifically, in Figure 2A, the showerhead 106 delivers process gas to a substrate 108 disposed on a pedestal 104. A vacuum pump 140 (shown in Figure 1) exhausts the process gas and reaction by-products resulting from the reaction of the process gas with the substrate 108 from the well 105. The process gas and reaction by-products flow over the substrate 108, around the pedestal 104 and the baffle 160, and exit through an exhaust port in the well 105, as follows:

[0094] 2B, process gases delivered by showerhead 106 flow uniformly over substrate 108 in the direction indicated by arrows 180-1 and 180-2. Process gases and reaction by-products flow uniformly between showerhead 106 and substrate 108 toward sidewall 105-1 of well 105 in the direction indicated by arrows 180-3 and 180-4.

[0095] The process gases and reaction by-products then flow downward around the upper portion 111 of the base 110 of the pedestal 104 toward the interior space 168 of the baffle 160 in the direction indicated by arrows 180-5 and 180-6. The process gases and reaction by-products flow through the gap between the cylindrical sidewall 162 of the baffle 160 and the OD of the upper portion 111 of the base 110 of the pedestal 104 in the direction indicated by arrows 180-5 and 180-6.

[0096] The process gas and reaction by-products then flow through first through fourth sets of openings 170-1, 170-2 in cylindrical sidewall 162 of baffle 160 in the direction indicated by arrows 180-7 and 180-8 toward flow channel 107 (described above). The process gas and reaction by-products then flow through flow channel 107 downward toward the bottom of well 105 in the direction indicated by arrows 180-9 and 180-10.

[0097] The process gases and reaction by-products then flow toward exhaust ports 103 and any other exhaust ports at the bottom of well 105, from where they exit in the direction indicated by arrows 180-11 and 180-12 toward foreline 144 (shown in FIG. 1). Thus, regardless of the number and location of exhaust ports 103 in well 105, the process gases flow uniformly over substrate 108, and the process gases and reaction by-products flow uniformly around pedestal 104 and exit processing chamber 102 through exhaust ports 103 more efficiently than if baffle 160 were not used.

[0098] Therefore, the structure of baffle 160 and the first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 in baffle 160, and the positions of first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 relative to exhaust outlet 103 described above, provide uniform exhaust of process gases and reaction by-products regardless of whether exhaust outlet 103 is unevenly (asymmetrically) positioned within well 105.

[0099] Additionally, the structure of annular flange 164, first and second arcuate flanges 166-1 and 166-2, and arcuate flanges 167-1 and 167-2 ensures that baffle 160 remains securely centered in well 105 during substrate processing. Securely centering baffle 160 in well 105 also reduces the risk of metal-to-metal rubbing between baffle 160 and well 105, which can cause particulate contamination and metal migration to the surface of substrate 108.

[0100] FIGS. 3-12 show various views of baffle 160, illustrating various elements or features of baffle 160. Each view illustrates some, but not all, elements (features) of baffle 160. The views shown in FIGS. 3-12 show all elements (features) of baffle 160 as a whole. In FIGS. 4-12, elements 166, 167, 170, and 172 may be shown only generically (i.e., without further identifying the elements with a "-1" or "-2"). In the following description, elements already identified and described in FIGS. 1, 2A, and 2B will not be described again for the sake of brevity.

[0101] 3 shows a perspective view of baffle 160. In this perspective view, first through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 in cylindrical sidewall 162 of baffle 160 are visible. Annular flange 164, portions of first and second arcuate flanges 166-1 and 166-2 that extend to one of outlets 103, and either of arcuate flanges 167-1 and 167-2 of baffle 160 are visible. The ends of first and second arcuate flanges 166-1 and 166-2 may extend further (nearer) toward first and second sets of openings 170-1 and 170-2 than shown.

[0102] 4 and 5 show front and rear views, respectively, of baffle 160. As shown in more detail in FIGS. 10-12, when outlet 103 is not diametrically opposed at the bottom of well 105, first set of openings 170-1 and second set of openings 170-2 adjacent to outlet 103 are similarly not diametrically opposed in cylindrical sidewall 162 of baffle 160. Instead, first set of openings 170-1 and second set of openings 170-2 are diametrically opposed along cylindrical sidewall 162 of baffle 160 along a chord that is smaller than the diameter of cylindrical sidewall 162 of baffle 160. Thus, first set of openings 170-1 and second set of openings 170-2 are partially visible in the front view shown in FIG. 4 but not in the rear view shown in FIG. 5. The third set of openings 172-1 and the fourth set of openings 172-2 are located at diametrically opposed positions in the cylindrical side wall 162 of the baffle 160. Thus, only one of the third set of openings 172-1 and the fourth set of openings 172-2 is visible in the front and rear views of the baffle 160 shown in Figures 4 and 5. The lines shown in Figures 8 and 9 provide the reference designation FB (F stands for front, B stands for rear) through which the front and rear views shown in Figures 4 and 5 are cut away.

[0103] 6 and 7 show right and left side views, respectively, of baffle 160. Again, as shown in more detail in FIGS. 10-12, when outlet 103 is not diametrically opposed at the bottom of well 105, first set of openings 170-1 and second set of openings 170-2 adjacent outlet 103 are similarly not diametrically opposed in cylindrical sidewall 162 of baffle 160. Instead, first set of openings 170-1 and second set of openings 170-2 are diametrically opposed along cylindrical sidewall 162 of baffle 160 along a chord that is smaller than the diameter of cylindrical sidewall 162 of baffle 160. Thus, the first set of openings 170-1 and the second set of openings 170-2 are visible off-center, specifically, off-center to the left of the center of the baffle 160 in the right side view of the baffle 160 shown in FIG. 6 and off-center to the right of the center of the baffle 160 in the left side view of the baffle 160 shown in FIG. 7. The third set of openings 172-1 and the fourth set of openings 172-2 are located at diametrically opposed locations on the cylindrical side wall 162 of the baffle 160. Thus, the third set of openings 172-1 and the fourth set of openings 172-2 are only partially visible in the right and left side views of the baffle 160 shown in FIGS. 6 and 7. The lines shown in FIGS. 8 and 9 provide the reference designations LR (L for left side and R for right side) from which the right and left side views shown in FIGS. 6 and 7 are cut away.

[0104] 8 and 9 show top and bottom views, respectively, of baffle 160. In the top view of baffle 160 shown in FIG. 8, only the annular flange 164 and cylindrical sidewall 162 of baffle 160 are visible. First and second arcuate flanges 166-1 and 166-2, as well as arcuate flanges 167-1 and 167-2 of baffle 160, are not visible because their ODs are smaller than the OD of annular flange 164. In the bottom view of baffle 160 shown in FIG. 9, the annular flange 164, cylindrical sidewall 162, first and second arcuate flanges 166-1 and 166-2, as well as arcuate flanges 167-1 and 167-2 of baffle 160 are visible. First through fourth sets of openings 170-1, 170-2, 172-1, and 172-2 in cylindrical side wall 162 of baffle 160 are not visible in either the top or bottom view of baffle 160.

[0105] Figure 10 shows a bottom view of the baffle 160 shown in Figure 9 and further illustrates the axes XX and YY and the planes AA and BB along which two cross sections of the baffle 160 are taken. The two cross sections of the baffle 160 are shown as first and second cross sections in Figures 11 and 12, respectively.

[0106] FIG. 11 shows a first cross-section of baffle 160 taken along line AA shown in FIG. 10, with line XX being the center of the first cross-section of baffle 160. Line XX bisects one of arcuate flanges 167-1 and 167-2. Because the first cross-section of baffle 160 shown in FIG. 11 is taken along line XX from the left side of baffle 160 but at a different angle than line LR shown in FIG. 10, one of first set of openings 170-1 and second set of openings 170-2 is fully visible, while the other of first set of openings 170-1 and second set of openings 170-2 is not visible. One of third set of openings 172-1 and fourth set of openings 172-2 is less visible than the other of third set of openings 172-1 and fourth set of openings 172-2.

[0107] FIG. 12 shows a second cross-section of baffle 160 taken along line BB shown in FIG. 10, with line YY being the center of the second cross-section of baffle 160. Line YY bisects one of arcuate flanges 167-1 and 167-2. Because the second cross-section of baffle 160 shown in FIG. 12 is taken along line YY from the right side of baffle 160 but at a different angle than line LR shown in FIG. 10, one of first set of openings 170-1 and second set of openings 170-2 is fully visible, while the other of first set of openings 170-1 and second set of openings 170-2 is not visible. One of third set of openings 172-1 and fourth set of openings 172-2 is less visible than the other of third set of openings 172-1 and fourth set of openings 172-2.

[0108] The baffle 160 helps direct the flow of gases and reaction byproducts not only during substrate processing but also during cleaning of the processing chamber 102. For example, during cleaning of the processing chamber 102, no substrate 108 is used. In some cleaning processes, a dummy substrate may be used. One or more cleaning gases are supplied to the processing chamber 102 through the showerhead 106. The cleaning gases react with residues deposited throughout the processing chamber 102 during substrate processing. The vacuum pump 140 removes the cleaning gases, residues released from components of the processing chamber 102, and reaction byproducts formed by reactions between the cleaning gases and the residues. The vacuum pump 140 removes these materials from the processing chamber 102 through an exhaust port in the processing chamber 102. The baffle 160 directs the flow of these materials during the cleaning process, as described above with reference to FIGS. 2A and 2B.

[0109] Although well 105 is shown and described as cylindrical throughout this disclosure, the well may have other shapes, and baffle 160 may be shaped to correspond to the shape of the well. For example, well 105 may have an oval or elliptical shape symmetrical about its major axis, with outlet 103 located at the bottom of well 105 near the end of the elliptical major axis. The shape of baffle 160 may be shaped (i.e., modified) to correspond to the periphery of well 105, such that a flange at the top of baffle 160 (i.e., the counterpart to cylindrical flange 164) seals against the top of well 105. Furthermore, in differently shaped baffles 160, arcuate flanges 166 and 167 (also referred to as the lower ring of baffle 160), which form a continuous annular structure near the bottom of baffle 160, may be shaped (i.e., modified) to seal against the interior wall of well 105. All other features of the differently shaped baffle 160 (eg, aperture sets 170 and 172, flow passages 107, gas flow through the baffle, etc.) remain the same as above.

[0110] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure may be embodied in various forms. Thus, while the disclosure includes specific examples, the true scope of the disclosure should not be limited thereto, as other variations will become apparent from the drawings, specification, and claims that follow.

[0111] It should be understood that one or more steps of a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described above as having particular features, one or more features described with respect to an embodiment of the present disclosure can be implemented in other embodiments and / or in combination with features of other embodiments (even if the combination is not expressly stated). In other words, the described embodiments are not mutually exclusive, and permutations of one or more embodiments with each other remain within the scope of the present disclosure.

[0112] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including "connected," "engaged," "coupled," "adjacent," "adjacent," "on," "above," "below," and "disposed." When a relationship between a first element and a second element is described in the above disclosure, unless expressly specified as "direct," the relationship may be a direct relationship where no other intervening elements exist between the first element and the second element, or an indirect relationship where one or more intervening elements (spatial or functional) exist between the first element and the second element. As used herein, the phrase "at least one of A, B, and C" should be interpreted as meaning a logical non-exclusive OR (A OR B OR C), and not as meaning "at least one of A, at least one of B, and at least one of C."

[0113] In some embodiments, the controller is part of a system, which may be part of the examples above. The system includes semiconductor processing equipment with processing tools, chambers, processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). The system is integrated with electronics for controlling pre-, during-, and post-processing operations of the semiconductor wafer or substrate. These electronics may be referred to as a "controller" and may control various components or subcomponents of the system.

[0114] The controller is programmed to control any of the processes disclosed herein, including process gas supply, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, RF generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, positional motion settings, wafer loading and unloading to and from tools and other transport tools, and / or load locks connected or coupled to a particular system, depending on the processing requirements and / or type of system.

[0115] Generally, in various embodiments, a controller is defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. Integrated circuits include chips in firmware format that store program instructions, DSPs, chips defined as ASICs, one or more microprocessors or microcontrollers that execute program instructions (e.g., software).

[0116] Program instructions are instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing processes on or for semiconductor wafers. In some embodiments, the operational parameters are part of a recipe defined by a process engineer to accomplish one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer molds.

[0117] In some embodiments, the controller is part of or connected to a computer that is integrated with, connected to, or otherwise networked to the system, or a combination thereof. For example, the controller is in the "cloud" that enables remote access of wafer processing, or is all or part of a fab host computer system. The controller enables remote access to the system to monitor the progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, modify parameters of a current process, set up processing steps following a current process, or initiate a new process.

[0118] In some examples, a remote computer (e.g., a server) provides the process recipe to the system over a computer network, including a local network or the Internet. The remote computer includes a user interface that allows entry or programming of parameters and / or settings that are then communicated from the remote computer to the system. In some examples, the controller receives instructions for processing the wafer in a configuration format. It should be understood that the configuration is specific to the type of process to be performed on the wafer and the type of tool to which the controller is connected or controlled.

[0119] Thus, as noted above, a controller may be distributed, e.g., by including one or more separate controllers that are networked together and cooperate toward a common goal, e.g., to carry out a process described herein. An example of a controller that is distributed for such a purpose includes one or more integrated circuits in the chamber that are located remotely (e.g., at the platform level or as part of a remote computer) and that communicate with one or more integrated circuits that cooperate to control a process in the chamber.

[0120] Without limitation, in various embodiments, the plasma systems described herein include plasma etch chambers, deposition chambers, spin rinse chambers, metal plating chambers, cleaning chambers, bevel edge etch chambers, physical vapor deposition (PVD) chambers, chemical vapor deposition (CVD) chambers, atomic layer deposition (ALD) chambers, atomic layer etch (ALE) chambers, ion implantation chambers, track chambers, or any other semiconductor processing chambers related to or used in the fabrication and / or manufacturing of semiconductor wafers.

[0121] As noted above, depending on the processing steps being performed by the tool, the controller communicates with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used to transport materials to and from tool locations and / or load ports in a semiconductor manufacturing factory to transport wafer containers.

Claims

1. 1. A substrate processing chamber comprising: a well defined by a bottom and a sidewall extending vertically upward from the bottom, the well having a plurality of outlets near the bottom of the well; a pedestal disposed within the well, the pedestal comprising a base and a stem; a baffle disposed within the well about the pedestal, the baffle comprising a sidewall and a plurality of sets of openings in the sidewall of the baffle configured to direct a flow of gas supplied to the substrate processing chamber around the periphery of the pedestal, toward the stem portion of the pedestal, through the plurality of openings in the sidewall of the baffle, and toward the plurality of exhaust ports; 1. A substrate processing chamber comprising:

2. 10. The substrate processing chamber of claim 1, A substrate processing chamber, wherein openings in at least one of the sets of openings are a different size and shape than openings in at least one other of the sets of openings.

3. 10. The substrate processing chamber of claim 1, A substrate processing chamber, wherein at least one set of the plurality of sets of openings is a different size and shape than at least one other set of the plurality of sets of openings.

4. 10. The substrate processing chamber of claim 1, A substrate processing chamber wherein the baffle is flush with the well.

5. 10. The substrate processing chamber of claim 1, A substrate processing chamber, wherein the well and the baffle are cylindrical, and the diameter of the baffle is smaller than the diameter of the well.

6. 10. The substrate processing chamber of claim 1, the sidewall of the well and the baffle are cylindrical; a bottom edge of the sidewall of the baffle disposed at the bottom of the well; A substrate processing chamber, wherein an outer diameter of the sidewall of the baffle is smaller than an inner diameter of the sidewall of the well.

7. 7. The substrate processing chamber of claim 6, A substrate processing chamber wherein the sidewall of the well and the sidewall of the baffle are the same height.

8. 7. The substrate processing chamber of claim 6, The baffle is an annular flange extending radially outward from an upper end of the side wall of the baffle and sealingly disposed on an upper end of the side wall of the well; a plurality of arcuate flanges extending radially outward from the side wall of the baffle, the arcuate flanges being positioned a predetermined distance from the bottom end of the side wall of the baffle; 1. A substrate processing chamber comprising:

9. 9. The substrate processing chamber of claim 8, The substrate processing chamber, wherein the predetermined distance is equal to or greater than the height of the plurality of exhaust ports.

10. 9. The substrate processing chamber of claim 8, The plurality of arcuate flanges have different arc lengths.

11. 9. The substrate processing chamber of claim 8, The substrate processing chamber, wherein the arcuate lengths of the arcuate flanges are based on the positions of the exhaust ports.

12. 9. The substrate processing chamber of claim 8, the plurality of arcuate flanges sealingly mate with the annular flange and the sidewall of the well forming a flow path between the plurality of arcuate flanges and the sidewall of the baffle and the sidewall of the well.

13. 13. The substrate processing chamber of claim 12, The gas flowing toward the stem portion of the pedestal enters the flow path through the sets of openings in the sidewall of the baffle and flows toward the plurality of exhaust ports.

14. 9. The substrate processing chamber of claim 8, the baffle includes a plurality of connecting flanges extending radially outward from the sidewall of the baffle, the connecting flanges being located at the predetermined distance from the bottom of the sidewall of the baffle and connecting the plurality of arcuate flanges.

15. 15. The substrate processing chamber of claim 14, The plurality of connecting flanges are arcuate and have a radial width smaller than that of the plurality of arcuate flanges.

16. 15. The substrate processing chamber of claim 14, The plurality of connecting flanges are arcuate and have an arc length that is smaller than that of the plurality of arcuate flanges.

17. 15. The substrate processing chamber of claim 14, The plurality of connecting flanges are arc-shaped, having an arc length that is smaller than a width of the plurality of exhaust ports.

18. 15. The substrate processing chamber of claim 14, The substrate processing chamber, wherein the plurality of arcuate flanges and the plurality of connecting flanges are coplanar.

19. 15. The substrate processing chamber of claim 14, The plurality of arcuate flanges and the plurality of connecting flanges form a continuous annular structure.

20. 15. The substrate processing chamber of claim 14, A substrate processing chamber wherein the baffle is monolithic.

21. 15. The substrate processing chamber of claim 14, the plurality of connecting flanges are adjacent to the plurality of outlets, At least one of the plurality of sets of openings is disposed proximate to the plurality of connecting flanges and the plurality of outlets; At least one other set of the plurality of sets of openings is spaced apart from the plurality of exhaust ports.

22. 22. The substrate processing chamber of claim 21, A substrate processing chamber, wherein the openings in the at least one set are smaller than the openings in the at least one other set.

23. 22. The substrate processing chamber of claim 21, A substrate processing chamber, wherein the openings in the at least one set are a different size and shape than the openings in the at least one other set.

24. 22. The substrate processing chamber of claim 21, The at least one set of substrate processing chambers is a different size than the at least one other set.

25. 22. The substrate processing chamber of claim 21, The at least one set of substrate processing chambers is a different shape than the at least one other set.

26. 22. The substrate processing chamber of claim 21, A substrate processing chamber, wherein the at least one set is vertically offset relative to the at least one other set on the sidewall of the baffle.

27. 10. The substrate processing chamber of claim 1, A substrate processing chamber wherein the flow of the gas around the pedestal is uniform regardless of the position of the plurality of outlets within the well.

28. 10. The substrate processing chamber of claim 1, further comprising: A substrate processing chamber comprising a substrate disposed on the pedestal, wherein the flow of the gas is uniform over the substrate regardless of the position of the plurality of outlets within the well.

29. 10. The substrate processing chamber of claim 1, further comprising: a showerhead disposed above the pedestal for delivering the gas into the substrate processing chamber during processing of a substrate disposed on the pedestal; a vacuum pump coupled to the plurality of exhaust ports for evacuating the gas from the substrate processing chamber during the processing; 1. A substrate processing chamber comprising:

30. 10. The substrate processing chamber of claim 1, further comprising: a showerhead disposed on the pedestal for delivering the gas into the substrate processing chamber while cleaning the substrate processing chamber; a vacuum pump coupled to the exhaust port for evacuating the gas from the substrate processing chamber during the cleaning; 1. A substrate processing chamber comprising:

31. 10. The substrate processing chamber of claim 1, A substrate processing chamber, wherein a first opening in a first set of the plurality of sets of openings is a different size and shape than a second opening in a second set of the plurality of sets of openings.

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