Biasable Electrostatic Chuck

Abstract

An exemplary substrate support assembly may include an electrostatic chuck body defining a substrate support surface that defines a substrate pedestal. The electrostatic chuck body may define a backside gas lumen extending through a surface of the substrate pedestal. The assembly may include a bias electrode coupled to the electrostatic chuck body. The bias electrode may include a plurality of conductive mesas that project upwardly over the substrate pedestal. The assembly may include a support rod coupled to the electrostatic chuck body. The assembly may include at least one chucking electrode embedded in the electrostatic chuck body. The assembly may include at least one heater embedded in the electrostatic chuck body.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of and priority to U.S. Patent Application No. 63 / 438,123, entitled "BIASABLE ELECTROSTATIC CHUCK," filed January 10, 2023, which is incorporated herein by reference in its entirety.

[0002] The present technology relates to semiconductor processes and equipment, and more particularly to substrate processing systems and components. [Background technology]

[0003] Post-exposure bake (PEB) is a critical step in the semiconductor lithography process. For chemically amplified photoresists (CARs), the higher temperatures during PEB complete the photochemical reactions initiated during exposure. Chemical amplification occurs when reaction products formed within the resist film during exposure act as catalysts during PEB. Applying an electric field to the PEB (EFE-PEB) induces anisotropic diffusion of reactive acids within the CAR, significantly increasing the sensitivity and process window available during lithography exposure.

[0004] Certain processes utilize temperature and a weak plasma (to apply an electric field) to perform EFE-PEB. It is known that many important parameters, such as line roughness (LCDU) of the developed resist, are highly dependent on temperature and current non-uniformity, as well as the time delay between application of the electric field and introduction of the wafer into the chamber.

[0005] In many cases, the substrate is vacuum chucked to the substrate support. However, the use of a vacuum chuck creates a significant delay between the introduction of the wafer and the application of an electric field to the wafer. This results in the wafer remaining in a higher temperature environment for a longer period of time, potentially resulting in wafer quality issues and reduced throughput.

[0006] Therefore, there is a need for improved systems and methods that can be used to efficiently heat and chuck substrates for post-exposure bake operations. These and other needs are addressed by the present technique. Summary of the Invention

[0007] An exemplary substrate support assembly may include an electrostatic chuck body defining a substrate support surface that defines a substrate pedestal. The electrostatic chuck body may define a backside gas lumen extending through a surface of the substrate pedestal. The assembly may include a bias electrode coupled to the electrostatic chuck body. The bias electrode may include a plurality of conductive mesas that project upwardly over the substrate pedestal. The assembly may include a support rod coupled to the electrostatic chuck body. The assembly may include at least one chucking electrode embedded in the electrostatic chuck body. The assembly may include at least one heater embedded in the electrostatic chuck body.

[0008] In some embodiments, the bias electrode can include a conductive mesh disposed on the surface of the substrate pedestal. The assembly can include an edge ring coupled to a periphery of the electrostatic chuck body. The edge of the bias electrode can include a conductive element contacting the edge ring. The assembly can include a cooling plate disposed below the electrostatic chuck body. The cooling plate can be coupled to a bottom surface of the edge ring. The assembly can include an electrical connection between the edge ring and the cooling plate. The multiple conductive mesas can include a wear-resistant conductive coating. The electrostatic chuck body can operate as a Johnsen-Rahbek chuck. The electrostatic chuck body can define multiple additional mesas protruding from the surface of the substrate pedestal. The assembly can include a power supply electrically coupled to the bias electrode. The at least one heater can include one or more top heaters and one or more bottom heaters. The one or more top heaters can include multiple pixel heaters. The multiple pixel heaters can include multiple heaters at different angular positions relative to a center of the substrate pedestal and multiple heaters at different radial positions relative to the center of the substrate pedestal. The one or more lower heaters may include multiple zone heaters. The multiple zone heaters may include one or more heaters selected from the group consisting of multiple wedge-shaped heaters, multiple arcuate heaters, a central circular heater, and one or more annular heaters concentric with the central circular heater. The bias electrode may be embedded in the electrostatic chuck body, and the multiple conductive mesas may protrude through a surface of the substrate pedestal.

[0009] Some embodiments of the present technology may include a substrate support assembly including an electrostatic chuck body defining a substrate support surface that defines a substrate pedestal. The electrostatic chuck body may define a backside gas lumen extending through a surface of the substrate pedestal. The assembly may include a bias electrode having a conductive mesh disposed over the surface of the substrate pedestal. The bias electrode may include a plurality of conductive mesas projecting upward from the conductive mesh. The assembly may include a support rod coupled to the electrostatic chuck body. The assembly may include at least one chucking electrode embedded in the electrostatic chuck body. The assembly may include at least one heater embedded in the electrostatic chuck body.

[0010] In some embodiments, the assembly may include an edge ring coupled to a peripheral edge of the electrostatic chuck body. The edge of the bias electrode may include a conductive element contacting the edge ring. The assembly may include a cooling plate disposed below the electrostatic chuck body. The cooling plate may be coupled to a bottom surface of the edge ring. The assembly may include an electrical connection between the edge ring and the cooling plate. The plurality of conductive mesas on the bias electrode may include a hard, low-coefficient-of-friction, wear-resistant, conductive coating. The electrostatic chuck body may define a plurality of additional mesas, which may be conductive or otherwise protrude from the surface of the substrate pedestal rather than being located on the bias electrode. The electrostatic chuck body may operate as a Coulomb chuck. The conductive mesh may include an inner ring, an outer ring, and a plurality of spokes connecting the inner ring and the outer ring. The conductive mesh may further include a middle ring disposed between the inner ring and the outer ring. The middle ring may be coupled to the plurality of spokes. At least 75% of the surface area of ​​the surface of the substrate pedestal may be free of mesas.

[0011] Some embodiments of the present technology may include a substrate support assembly including an electrostatic chuck body defining a substrate support surface that defines a substrate pedestal. The electrostatic chuck body may define a backside gas lumen extending through a surface of the substrate pedestal. The assembly may include a bias electrode coupled to the electrostatic chuck body. The bias electrode may include a plurality of conductive mesas projecting upwardly over the substrate pedestal. The assembly may include an edge ring coupled to a periphery of the electrostatic chuck body. An edge of the bias electrode may include a conductive element contacting the edge ring. The assembly may include a cooling plate disposed below the electrostatic chuck body. The cooling plate may be coupled to a bottom surface of the edge ring. The assembly may include an electrical connection between the edge ring and the cooling plate. The assembly may include a support rod coupled to the electrostatic chuck body. The assembly may include at least one chucking electrode embedded in the electrostatic chuck body. The assembly may include at least one heater embedded in the electrostatic chuck body.

[0012] In some embodiments, the assembly can include an additional plurality of mesas having a first diameter. The plurality of mesas can have a second diameter greater than the first diameter. The substrate support assembly can include an additional plurality of mesas greater in number than the plurality of conductive mesas. The additional plurality of mesas can include the same material as the plurality of conductive mesas.

[0013] Such technology can provide numerous benefits over conventional systems and techniques. For example, the substrate support assembly can provide bias electrodes that allow a substrate supported thereon to be electrically biased to create an electric field across the substrate. The electric field can enable a field-enhanced post-exposure bake operation to be performed using an electrostatic chuck. Additionally, an inert gas can be flowed to the backside of the substrate, which can increase the thermal uniformity and temperature ramp rate of the substrate and help increase the throughput of substrate processing within the chamber. These and other embodiments, along with many of their advantages and features, are described in more detail in the following description and in conjunction with the accompanying figures.

[0014] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 1 illustrates a top view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2] 1 is a schematic cross-sectional view of an exemplary plasma system in accordance with some embodiments of the present technique; [Figure 3] 1 is a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 4] 1 is a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 4A] 1 is a top view of a heater arrangement for an exemplary substrate support assembly in accordance with some embodiments of the present technique; [Figure 4B] 1 is a top view of a heater arrangement for an exemplary substrate support assembly in accordance with some embodiments of the present technique; [Figure 4C] 1 is a top view of a heater arrangement for an exemplary substrate support assembly in accordance with some embodiments of the present technique; [Figure 4D]1 is a top view of a conductive mesh arrangement for an exemplary substrate support assembly in accordance with some embodiments of the present technique; [Figure 5] 1 is a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 6] 1 is a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 7] 1 is a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 8] 1 is a schematic partial cross-sectional view of an exemplary substrate support assembly, in accordance with some embodiments of the present technique; [Figure 9] 1 is a flow diagram illustrating operations of a method for processing a substrate in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0016] Some of these figures are included as schematic diagrams. It is understood that these figures are for illustrative purposes and are not to be considered to scale unless specifically stated to be to scale. Additionally, as schematic diagrams, these figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0017] In the accompanying figures, similar components and / or features may have the same reference label. Furthermore, various components of the same type may be distinguished by a letter following the reference label that distinguishes the similar components. When only a first reference label is used in this specification, the description is applicable to any of the similar components having the same first reference label, regardless of its letter.

[0018] Post-exposure bake (PEB) can involve using elevated temperatures to complete the photochemical reactions in chemically amplified photoresists (CARs) initiated during exposure. Chemical amplification occurs when reaction products formed within the resist film during exposure act as catalysts during PEB. Applying an electric field to PEB (EFE-PEB) induces anisotropic diffusion of reactive acids within the CAR, significantly increasing the sensitivity and process window available during lithography exposure. Traditionally, vacuum chucks have been used to secure the substrate to the substrate support during such PEB operations. However, vacuum chucks may not be suitable for PEB operations supplemented by an electric field. For example, to heat the substrate to a desired temperature, the pressure in the chamber must be significantly increased to press the substrate against the substrate support to promote sufficient heat transfer. However, the plasma cannot be struck and the electric field cannot be applied until the pressure in the chamber has decreased to its initial level. This results in the substrate remaining in a higher temperature environment for an extended period of time, potentially resulting in wafer quality issues and reduced throughput.

[0019] The present technology overcomes these challenges by incorporating a bias electrode into the electrostatic chuck. The bias electrode can supply a bias current to a substrate in contact with the bias electrode, enabling the chuck to be used in EFE-PEB operations. The use of an electrostatic chuck eliminates the need to change chamber pressure to heat the substrate, which helps reduce the amount of time the substrate spends in a hotter environment. This can improve process quality and increase chamber throughput. To further enhance heat transfer from the substrate support to the substrate, an inert gas can be flowed to the backside of the substrate to thermally couple the substrate to the substrate support. The insert gas can promote faster heat transfer, further improving the quality and efficiency of EFE-PEB operations.

[0020] While the remaining disclosure routinely identifies specific post-exposure bake processes utilizing the disclosed technology, it will be readily understood that these systems and methods are equally applicable to other deposition, etch, and cleaning chambers and processes that may occur within the described chambers. Thus, the present technology should not be considered limited to use solely with these specific deposition processes or chambers. After discussing one possible system and chamber that may include a pedestal according to embodiments of the present technology, this disclosure describes additional variations and adjustments to this system according to embodiments of the present technology.

[0021] 1 illustrates a top view of one embodiment of a processing system 100 including deposition, etching, baking, and curing chambers according to embodiments. In this illustration, a pair of front-opening unified pods 102 supply substrates of various sizes, which are received by a robotic arm 104 and placed in a low-pressure holding area 106, and then placed in one of the substrate processing chambers 108a-f, positioned in tandem sections 109a-c. A second robotic arm 110 can be used to transport substrate wafers from the holding area 106 to the substrate processing chambers 108a-f and back to the holding area 106. Each substrate processing chamber 108a-f can be equipped to perform multiple substrate processing operations, including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and other substrate processes including annealing, ashing, and the like, as well as forming stacks of semiconductor materials as described herein.

[0022] The substrate processing chambers 108a-f can include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, e.g., 108c-d and 108e-f, can be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, e.g., 108a-b, can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, can be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes can be performed in chambers separate from the fabrication system shown in different embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are also contemplated by system 100.

[0023] 2 shows a cross-sectional view of an exemplary process chamber system 200, partitioning a plasma generation region within a processing chamber. During etching of a film, such as titanium nitride, tantalum nitride, tungsten, silicon, polycrystalline silicon, silicon oxide, silicon nitride, silicon oxynitride, or silicon oxycarbide, a process gas can be flowed through a gas inlet assembly 205 into a first plasma region 215. The system may also include a remote plasma system (RPS) 201, which can process a first gas that then travels through the gas inlet assembly 205. The inlet assembly 205 can include two or more separate gas supply channels, and a second channel (not shown) can bypass the RPS 201, if one is included.

[0024] A pedestal 265 or substrate support on which the cooling plate 203, faceplate 217, ion suppressor 223, showerhead 225, and substrate 255 are disposed is shown, and embodiments may include each of these. The pedestal 265 may have heat exchange channels through which a heat exchange fluid flows to control the temperature of the substrate, and the heat exchange channels may be operable to heat and / or cool the substrate or wafer during processing operations. The wafer support pan of the pedestal 265 may comprise aluminum, ceramic, or a combination thereof, and may be resistively heated using embedded resistive heating elements to achieve relatively high temperatures, such as from about 100° C. or less to about 1100° C. or more.

[0025] The face plate 217 can be pyramidal, conical, or another similar structure with a narrow top expanding to a wider base. Additionally, the face plate 217 can be flat, as shown, and include multiple through-channels used to distribute process gases. Depending on the use of the RPS 201, plasma-generating gases and / or plasma-excited species can pass through multiple holes, shown in FIG. 2B, in the face plate 217 for more uniform delivery to the first plasma region 215.

[0026] An exemplary configuration can include opening the gas inlet assembly 205 into a gas feed region 258 separated from the first plasma region 215 by the faceplate 217 so that gases / species flow into the first plasma region 215 through holes in the faceplate 217. Structural and operational features can be selected to prevent significant backflow of plasma from the first plasma region 215 back into the feed region 258, the gas inlet assembly 205, and the fluid feed system 210. The faceplate 217 or conductive top of the chamber and the showerhead 225 are shown with an insulating ring 220 positioned between these features, which allows an AC potential relative to the showerhead 225 and / or ion suppressor 223 to be applied to the faceplate 217. The insulating ring 220 can be positioned between the faceplate 217 and the showerhead 225 and / or ion suppressor 223 to allow a capacitively coupled plasma (CCP) to form in the first plasma region. Additionally, a baffle (not shown) may be located in the first plasma region 215 or otherwise coupled to the gas inlet assembly 205 to affect the flow of fluid through the gas inlet assembly 205 into this region.

[0027] The ion suppressor 223 may comprise a plate or other geometry defining a plurality of apertures throughout its structure configured to suppress the migration of ionically charged species from the first plasma region 215 while allowing uncharged neutral or radical species to pass through the ion suppressor 223 and enter the activated gas delivery region between the suppressor and the showerhead. In embodiments, the ion suppressor 223 may comprise a perforated plate with various aperture configurations. These uncharged species may include highly reactive species that are transported through the apertures by a less reactive carrier gas. As described above, the migration of ionic species through these apertures may be reduced, and in some cases completely suppressed. Advantageously, controlling the amount of ionic species passing through the ion suppressor 223 can provide enhanced control over the gas mixture contacting the underlying wafer substrate, thereby increasing control over the deposition and / or etching characteristics of the gas mixture. For example, adjusting the ion concentration of a gas mixture can significantly alter its etch selectivity, e.g., SiNx:SiOx etch ratio, Si:SiOx etch ratio, etc. In alternative embodiments where deposition is performed, this may also alter the balance between conformal and flow-type deposition on the dielectric material.

[0028] The plurality of apertures in the ion suppressor 223 can be configured to control the passage of the activated gas, i.e., ionic, radical, and / or neutral species, through the ion suppressor 223. For example, the aspect ratio of the apertures, i.e., the diameter to length of the apertures, and / or the geometry of the apertures can be controlled to reduce the flow of ionically charged species in the activated gas passing through the ion suppressor 223. The apertures in the ion suppressor 223 can include a tapered portion facing the plasma excitation region 215 and a cylindrical portion facing the showerhead 225. The cylindrical portion can be shaped and sized to control the flow of ionic species toward the showerhead 225. An adjustable electrical bias can also be applied to the ion suppressor 223 as an additional means of controlling the flow of ionic species through the suppressor.

[0029] The ion suppressor 223 can function to reduce or eliminate the amount of ionically charged species that travel from the plasma generation region to the substrate. Uncharged neutral and radical species can still pass through the openings in the ion suppressor and react with the substrate. Note that in embodiments, complete elimination of ionically charged species in the reaction region surrounding the substrate may not be achieved. In certain cases, ionic species are intended to reach the substrate to perform etching and / or deposition processes. In these cases, the ion suppressor can help control the concentration of ionic species in the reaction region at a level that supports this process.

[0030] The showerhead 225 in combination with the ion suppressor 223 can prevent the plasma present in the first plasma region 215 from directly exciting gases in the substrate processing region 233, while still allowing excited species to travel from the chamber plasma region 215 to the substrate processing region 233. In this manner, the chamber can be configured to prevent the plasma from contacting the substrate 255 being etched. This advantageously protects various intricate structures and films patterned on the substrate that could be damaged, misaligned, or otherwise distorted if directly contacted by the generated plasma. Additionally, allowing the plasma to contact or approach the substrate level can increase the etching rate due to oxidizing species. Therefore, if the exposed area of ​​material is an oxide, this material can be further protected by maintaining the plasma away from the substrate.

[0031] The processing system may further include a power supply 240 electrically coupled to the processing chamber to provide power to the faceplate 217, the ion suppressor 223, the showerhead 225, and / or the pedestal 265 to generate a plasma in the first plasma region 215 or processing region 233. The power supply may be configured to deliver an adjustable amount of power to the chamber depending on the process being performed. Such a configuration may enable the use of a tunable plasma in the process being performed. Unlike remote plasma units, which often provide an on or off function, a tunable plasma may be configured to deliver a specific amount of power to the plasma region 215. This may enable the generation of specific plasma characteristics such that precursors can be dissociated in a specific manner to enhance the etch profile produced by those precursors.

[0032] A plasma can be ignited in the chamber plasma region 215 above the showerhead 225 or in the substrate processing region 233 below the showerhead 225. The plasma can exist in the chamber plasma region 215 to generate, for example, radical precursors from the inflow of fluorine-containing precursors or other precursors. An AC voltage, typically in the radio frequency (RF) range, can be applied between a conductive top portion of the processing chamber, such as the faceplate 217, and the showerhead 225 and / or ion suppressor 223 to ignite the plasma in the chamber plasma region 215 during deposition. The RF power supply can generate a high RF frequency of 13.56 MHz, although other frequencies can also be generated alone or in combination with the 13.56 MHz frequency.

[0033] FIG. 3 illustrates a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 300 in accordance with some embodiments of the present technique. FIG. 3 may include one or more components discussed above in connection with FIG. 2 and may provide additional details regarding this chamber. Chamber 300 may be used to perform semiconductor processing operations, including the deposition of the dielectric material stack described above. Chamber 300 may illustrate a partial view of a processing region of a semiconductor processing system and may not include all of the components understood to be incorporated in some embodiments of chamber 300, such as the additional lid stack component described above.

[0034] As mentioned above, FIG. 3 may depict a portion of a processing chamber 300. The chamber 300 may include a showerhead 305 and a substrate support assembly 310. The showerhead 305 and the substrate support 310, together with the chamber sidewalls 315, may define a substrate processing region 320 in which a plasma can be generated. The substrate support assembly may include an electrostatic chuck body 325, which may include one or more components embedded or disposed within the body. Components embedded within the top puck may not be exposed to processing materials in some embodiments and may be retained entirely within the chuck body 325. The electrostatic chuck body 325 may define a substrate support surface 327 and may be characterized by a thickness and a length or diameter, depending on the specific geometry of the chuck body. In some embodiments, the chuck body may be oval and may be characterized by one or more radial dimensions from a central axis through the chuck body. It should be understood that the top puck can be any shape and size, and when discussing radial dimensions, the top puck can define any length from the center position of the chuck body.

[0035] The electrostatic chuck body 325 can be coupled to a mandrel 330, which can support the chuck body and can include channels for the delivery and reception of electrical and / or fluid lines, which can be coupled to internal components of the chuck body 325. While the chuck body 325 can include associated channels or components to operate as an electrostatic chuck, in some embodiments, the assembly can operate as or include components for a vacuum chuck or any other type of chuck system. The mandrel 330 can be coupled to the chuck body on a second surface of the chuck body opposite the substrate support surface. The electrostatic chuck body 325 can include a first bipolar electrode 335a, which can be embedded in the chuck body proximate the substrate support surface. The electrode 335a can be electrically coupled to a DC power source 340a. The power source 340a can be configured to provide energy or voltage to the conductive chuck electrode 335a. It can operate to form a plasma of a precursor within the processing region 320 of the semiconductor processing chamber 300, while maintaining other plasma operations as well. For example, the electrode 335a can also be a chuck mesh that operates as an electrical ground for a capacitive plasma system that includes an RF source 307 electrically coupled to the showerhead 305. For example, the electrode 335a can also operate as an electrical bias for the substrate to provide electrostatic clamping of the substrate to the substrate support surface while operating as a ground path for RF power from the RF source 307. The power supply 340a can include a filter, a power supply, and several other electrical components configured to provide a chucking voltage.

[0036] The electrostatic chuck body can also include a second bipolar electrode 335b, which can also be embedded in the chuck body proximate the substrate support surface. The electrode 335b can be electrically coupled to a DC power supply 340b. The power supply 340b can be configured to provide energy or voltage to the conductive chuck electrode 335b. Additionally, electrical components and details regarding bipolar chucks according to some embodiments are described further below, and any of these designs can be implemented in the processing chamber 300. For example, additional plasma-related power supplies or components can be incorporated, as described further below.

[0037] During operation, a substrate can at least partially contact the substrate support surface of the electrostatic chuck body, creating a contact gap that essentially creates a capacitive effect between the surface of the pedestal and the substrate. A voltage can be applied to the contact gap, thereby generating an electrostatic chucking force. The power supplies 340a and 340b can provide charge that transfers from the electrodes to the substrate support surface, allowing charge to accumulate on the substrate support surface, creating a charge layer with Coulombic attraction to the opposite charge on the substrate, electrostatically holding the substrate against the substrate support surface of the chuck body. This charge transfer can occur by passing a current through the dielectric material of the chuck body, due to the finite resistance in the dielectric for Johnsen-Rahbek type chucks that can be used in some embodiments of the present technology.

[0038] The chuck body 325 can also define a recessed region 345 in the substrate support surface that can provide a recessed pocket into which a substrate can be placed. The recessed region 345 can be formed in an interior region of the top puck and can be configured to receive a substrate for processing. The recessed region 345 can surround a central region of the electrostatic chuck body, as shown, and can be sized to accommodate various substrate sizes. A substrate can be placed within the recessed region and accommodated by an outer region 347 that can contain the substrate. In some embodiments, the height of the outer region 347 can be recessed so that the substrate is flush with or below the surface height of the substrate support surface in the outer region 347. In some embodiments, the recessed surface can control edge effects during processing, thereby improving deposition uniformity on the substrate. In some embodiments, an edge ring can be disposed around the periphery of the top puck and at least partially define a recess into which a substrate can be placed. In some embodiments, the surface of the chuck body can be substantially planar, and the edge ring can completely define a recess into which a substrate can be placed.

[0039] In some embodiments, the electrostatic chuck body 325 and / or the mandrel 330 can be insulating or dielectric materials. For example, oxides, nitrides, carbides, and other materials can be used to form these components. Exemplary materials include ceramics including aluminum oxide, aluminum nitride, silicon carbide, tungsten carbide, and any other metal or transition metal oxide, nitride, carbide, boride, or titanate, as well as combinations of these materials and other insulating or dielectric materials. In some embodiments, different grades of ceramic material can be used to provide a composite configured to operate over a specific temperature range, and therefore similar materials with different ceramic grades can be used for the top puck and mandrel. In some embodiments, dopants can be incorporated to tailor electrical properties as well. Exemplary dopant materials can include yttrium, magnesium, silicon, iron, calcium, chromium, sodium, nickel, copper, zinc, or any number of other elements known to be incorporated into ceramic or dielectric materials.

[0040] The electrostatic chuck body 325 can also include an embedded heater 350 housed within the chuck body. In embodiments, the heater 350 can include a resistive heater or a fluid heater. In some embodiments, the electrode 335 can be operated as a heater, but decoupling these operations can provide additional individual control and an extended heating range while limiting the area of ​​plasma formation. The heater 350 can include a polymer heater bonded or bonded to the chuck body material, but can also include a conductive element embedded in the electrostatic chuck body and configured to receive an electric current, such as an AC current, to heat the top puck. The electric current can be delivered through the mandrel 330 through a channel similar to the DC power discussed above. The heater 350 can be coupled to a power supply 365, which can provide an electric current to the resistive heating element to facilitate heating of the associated chuck body and / or substrate. In embodiments, the heater 350 may include multiple heaters, each associated with a section of the chuck body, such that an exemplary chuck body may include a similar number of sections as heaters or a greater number of sections than heaters. In some embodiments, a chuck mesh electrode 335 may be positioned between the heater 350 and the substrate support surface 327, and in some embodiments, a distance between the electrode in the chuck body and the substrate support surface may be maintained, as described further below.

[0041] The heater 350 is capable of regulating the temperature of the electrostatic chuck body 325 and a substrate positioned on the substrate support surface 327. The heater can have an operating temperature range for heating the chuck body and / or substrate to about 100° C. or higher, and the heater can be configured to heat to about 125° C. or higher, about 150° C. or higher, about 175° C. or higher, about 200° C. or higher, about 250° C. or higher, about 300° C. or higher, about 350° C. or higher, about 400° C. or higher, about 450° C. or higher, about 500° C. or higher, about 550° C. or higher, about 600° C. or higher, about 650° C. or higher, about 700° C. or higher, about 750° C. or higher, about 800° C. or higher, about 850° C. or higher, about 900° C. or higher, about 950° C. or higher, about 1000° C. or higher, or higher. The heater can also be configured to operate within any range enclosed between any two of these recited values, or within a smaller range enclosed by any of these ranges. In some embodiments, the chuck heater can be operated to maintain the substrate temperature above at least 500° C. during the deposition operation.

[0042] FIG. 4 shows a schematic partial cross-sectional view of a substrate support assembly 400 in accordance with some embodiments of the present technique. As described above, in some embodiments, the present technique can be used to perform film deposition and curing in a single chamber. The substrate support assembly 400 can be similar to the substrate support assembly 310 and can include any of the features, components, or characteristics of the support described above, including any associated components or power supplies. The substrate support assembly 400 can include a support mandrel 405. The electrostatic chuck body 425 can include one or more components embedded or disposed within the body and can be positioned above the support mandrel 405. Components embedded within the top puck may not be exposed to process materials in some embodiments and can be retained entirely within the chuck body 425. In the illustrated embodiment, the electrostatic chuck body 425 can be formed from a dielectric material, such as, but not limited to, aluminum oxide and / or aluminum nitride.

[0043] The electrostatic chuck body 425 can define a substrate support surface or substrate pedestal 427 and can be characterized by a thickness and a length or diameter, depending on the particular geometry of the chuck body. In some embodiments, the chuck body 425 can be oval and can be characterized by one or more radial dimensions from a central axis through the chuck body. It should be understood that the top puck can be any geometry and, when discussing radial dimensions, can define any length from a central location of the chuck body 425. In some embodiments, the surface of the substrate pedestal 427 can be substantially flat (e.g., at least 95% flat, at least 97% flat, at least 99% flat, or more), and the electrostatic chuck body 425 can operate as a Coulomb chuck, although other designs are possible. The electrostatic chuck body 425 can define a backside gas lumen 429 that can extend through the surface of the substrate pedestal 427 to supply gas to the backside of the wafer. For example, the backside gas lumen 429 can extend from the surface of the substrate pedestal 427 through the thickness of the electrostatic chuck body 425 and / or mandrel 405, and the backside gas lumen 429 can be coupled to a gas source 495. The gas source 495 can supply an inert gas, such as helium, to the backside of the substrate via the backside gas lumen 429. The gas can fill the gap between the substrate and the substrate pedestal 427 and facilitate heat exchange between the electrostatic chuck body 425 and the substrate, allowing the substrate to be more efficiently heated to a desired temperature for a given processing operation.

[0044] As described above, one or more components can be embedded or disposed within the electrostatic chuck body 425. For example, at least one chuck electrode 430 can be embedded within the electrostatic chuck body 425. The at least one chuck electrode 430 can include one or more monopolar electrodes or multiple bipolar / multipolar electrodes. In some embodiments, at least one heater (such as an AC heating coil) can be disposed within the electrostatic chuck body 425. For example, as shown, the electrostatic chuck body 425 can include one or more top heaters 435 and / or one or more bottom heaters 440. In various embodiments, these heaters can be positioned above and / or below the chuck electrode 430. As shown, both the top heater 435 and the bottom heater 440 are disposed below the chuck electrode 430. In certain embodiments, the top heater 435 can include multiple pixel heaters that provide temperature control at multiple small, discrete locations on the substrate pedestal 427. For example, multiple top heaters 435 can be arranged at different angular and / or radial positions, such as in a dartboard configuration. More specifically, as best shown in FIG. 4A , the central-most top heater 435a can be circular and / or annular in shape, with an annular band of multiple arcuate top heaters 435b positioned radially outward from the central-most top heater 435a. Such a configuration can provide a high level of granularity for carefully adjusting the temperature of individual regions of the substrate pedestal 427 and can be used to address various forms of temperature non-uniformity (e.g., planar, radial, residual, etc.). In various embodiments, any number of top heaters 435 can be provided.For example, the electrostatic chuck body 425 can include at least or about 1 top heater, at least or about 5 top heaters, at least or about 10 top heaters, at least or about 20 top heaters, at least or about 40 top heaters, at least or about 50 top heaters, at least or about 75 top heaters, at least or about 100 top heaters, at least or about 125 top heaters, at least or about 150 top heaters, or more. It will be understood that the size, number, and arrangement of the top heaters 435 shown are provided by way of example only, and that numerous variations exist within the scope of the present invention.

[0045] The lower heater 440 can include multiple zone heaters that can provide temperature control to one or more larger sections of the substrate pedestal 427 to address temperature uniformity issues. In some embodiments, as shown in FIG. 4B , the lower heater 440 can include a central-most lower heater 440a that is circular and / or annular in shape and can have one or more annular lower heaters 440b concentric with the central-most lower heater 440a. In some embodiments, as shown in FIG. 4C , the lower heater 440c can be generally wedge-shaped. Any number of lower heaters 440 can be included to provide temperature control sections to address various non-uniformity issues. For example, the electrostatic chuck body 425 can include at least or about one lower heater, at least or about two lower heaters, at least or about three lower heaters, at least or about four lower heaters, at least or about five lower heaters, at least or about ten lower heaters, or more. It will be appreciated that the size, number, and arrangement of the lower heaters 440 shown are provided by way of example only, and that many variations exist within the scope of the present invention.

[0046] Each heater 435, 440 can be coupled to a power source, such as via one or more rods, leads, and / or other electrical connections, which can extend through the electrostatic chuck body 425 and / or mandrel 405. While the top heater 435 is described as being a pixel heater and the bottom heater 440 is described as being a zone heater, it will be understood that in various embodiments, such positioning can be reversed. Additionally, in some embodiments, both sets of heaters can be zone heaters or pixel heaters. Some embodiments can include fewer (e.g., zero or one) sets of heaters, while other embodiments can include additional layers of heaters.

[0047] A bias electrode 445 can be coupled to the electrostatic chuck body 425. For example, the bias electrode 445 can include a conductive mesh 450 disposed on a substrate pedestal 427. In some embodiments, the conductive mesh 450 can be attached to the substrate pedestal 427 by atomic layer deposition, sputtering, brazing, and / or other techniques. FIG. 4D shows a top view of the conductive mesh 450 according to some embodiments of the present invention. For example, the conductive mesh 450 can include one or more concentric rings 452, the rings 452 being coupled together via one or more spokes 454. As shown, the conductive mesh 450 can include an inner ring 452 a, an outer ring 452 c, and a middle ring 452 b disposed between the inner ring 452 a and the outer ring 452 c. While shown with three rings 452, it will be understood that various embodiments can include more or fewer rings 452. For example, the conductive mesh 450 can include at least one ring, at least two rings, at least three rings, at least four rings, at least five rings, at least six rings, or more. The rings 452 can be spaced at regular and / or irregular radial intervals. As shown, the inner ring 452a is positioned 50 mm from the center of the conductive mesh 450, the middle ring 452b is positioned 150 mm from the center, and the outer ring 452c is positioned 250 mm from the center, although other spacings are possible in various embodiments.

[0048] Each of the rings 452 can be interconnected with one or more (possibly all) of the other rings 452 via one or more spokes 454 that extend between and connect the various rings 452. In some embodiments, some or all of the spokes 454 can extend along radial lines from the center of the conductive mesh 450 and can connect with each of the rings 452. As shown, the conductive mesh 450 includes inner spokes 454a that extend from the center to the inner ring 452a. The inner spokes 454a can be located at regular and / or irregular angular intervals around the conductive mesh 450. While four inner spokes 454a are shown, it will be understood that various embodiments can include more or fewer inner spokes 454a. A plurality of radial spokes 454b can extend from the inner ring 452a to the outer ring 452c (and, in some embodiments, can contact the middle ring 452b). Although the radial spokes 454b are shown as being angularly offset from the inner spokes 454a, in some embodiments, the radial spokes 454b can be aligned with the inner spokes 454a. The radial spokes 454b can be positioned at regular and / or irregular angular intervals around the conductive mesh 450. While four radial spokes 454b are shown, it will be understood that various embodiments can include more or fewer radial spokes 454b, and that the multiple inner spokes 454a and radial spokes 454b can be the same or different. Multiple V-shaped spokes 454c can extend from the inner ring 452a toward the outer ring 452c. For example, at each junction between the inner spokes 454a and the inner ring 452a, the V-shaped spokes 454c can branch outward, with the point of the V being the junction. The outer end of each v-shaped spoke 454c (e.g., beyond the middle ring 452b) can branch into an additional v-shaped portion 454d adjacent to the outer ring 452c. Each v-shaped portion 454d can then contact the outer ring 452c.The v-shaped spokes 454c can be positioned at regular and / or irregular angular intervals around the conductive mesh 450. While four v-shaped spokes 454c are shown, it will be understood that various embodiments can include more or fewer v-shaped spokes 454c. Additionally, while shown as v-shaped, it will be understood that various embodiments can use spokes of other shapes (such as radial / linear spokes).

[0049] Although described as having a plurality of interconnected rings and spokes, in various embodiments, conductive mesh 450 can take other forms. For example, conductive mesh 450 can include a lattice formed from a plurality of square and / or other shapes. The lattice can be formed from shapes of uniform and / or variable size, and the nodes (e.g., junctions where multiple segments intersect) can be uniformly and / or irregularly distributed around substrate pedestal 427.

[0050] The bias electrode 445 can include a plurality of conductive mesas 455 projecting upward from the conductive mesh 450. The conductive mesas 455 and / or the conductive mesh 450 can be formed from a conductive material such as aluminum, chromium, gold, and / or other conductive materials. The mesas 455 can support the bottom surface of the substrate during processing operations. In some embodiments, the mesas 455 can be provided in rings and / or spokes of the conductive mesh 450. For example, as shown, the mesas 455 are disposed around each ring and can be positioned at regular and / or irregular intervals around each ring (or spoke). In some embodiments, each mesa 455 can have a height (relative to the surface of the substrate pedestal 427) of about 10 mils or less, about 9 mils or less, about 8 mils or less, about 7 mils or less, about 6 mils or less, about 5 mils or less, about 4 mils or less, about 3 mils or less, about 2 mils or less, about 1 mil or less, about 0.5 mils or less, or less. The mesas 455 can each have the same diameter (or cross-sectional area), or in various embodiments, some can have different diameters (or cross-sectional areas).

[0051] In some embodiments, the surface of the substrate pedestal 427 is not substantially flat and can define a plurality of additional mesas 470. The additional mesas 470 can be disposed between the conductive mesas 455, and each can have substantially the same height as the mesa 455. The lateral dimensions of the additional mesas 470 can be the same as or different from the mesa 455. For example, in some embodiments, each additional mesa 470 can have a diameter smaller than the diameter of the mesa 455. For example, the diameter of each additional mesa 470 can be about 0.5 mm to 1.5 mm, about 0.75 mm to 1.25 mm, or about 1 mm. The diameter of each mesa 455 can be about 1.5 mm to 2.5 mm, about 1.75 mm to 2.25 mm, or about 2 mm. The substrate support assembly 400 can include more additional mesas 470 than mesas 455. For example, in certain embodiments, there can be about 150-600 additional mesas, about 200-550 additional mesas, about 250-500 additional mesas, about 300-450 additional mesas, or about 350-400 additional mesas. There can be about 25-150 conductive mesas, about 50-125 conductive mesas, or about 75-100 conductive mesas. The number of additional mesas 470 can be at least 1.5 times, at least 2 times, at least 3 times, at least 4 times, at least 5 times, at least 6 times, at least 7 times, or more, the number of conductive mesas 455.

[0052] The additional mesas 470 may not be coupled to the conductive mesh 450, but instead may be positioned between the various rings 452 and spokes 454. In some embodiments, the additional mesas 470 may be formed from a dielectric material, such as the material used to form the electrostatic chuck body 425. In other embodiments, the additional mesas 470 may be unpowered, not part of the bias electrode 445, and formed from a conductive material. For example, the additional mesas may be formed from the same material as the conductive mesh 450 and / or the conductive mesas 455. This may allow the conductive mesas 450 and the additional mesas 470 to be deposited and / or otherwise attached to the surface of the substrate pedestal 427 in a single step, and may make it easier to fabricate the various mesas to have substantially the same height.

[0053] The exposed surfaces (e.g., surfaces not in contact with the electrostatic chuck body 425) of the conductive mesh 450, mesas 455, and / or mesas 470 (when the mesas 470 are formed from a conductive material) can be coated with a wear-resistant coating, with the coating applied to at least the mesas 455 and / or mesas 470 being conductive. For example, the coating applied to one or more of the components can include a diamond-like carbon (DLC) coating, a carbide material, a nitride material, and / or other coating. The coating can be hard and have a low coefficient of friction. The free area (e.g., the flat surface of the substrate pedestal 427 that is free of the mesas 455 and / or mesas 470) can be at least 75% of the surface area of ​​the surface of the substrate pedestal 427, at least 80% of the surface area, at least 85% of the surface area, at least 90% of the surface area, at least 95% of the surface area, or more.

[0054] The bias electrode 445 can be coupled to one or more power sources 490 via one or more electrical lines 485 (leads, rods, wires, etc.), which can extend through the electrostatic chuck body 425 and / or the mandrel 405. The power source 490 can supply a bias voltage to the bias electrode 445. For example, a DC power source can supply a DC voltage to the bias electrode 445. The bias voltage can be transmitted to a substrate disposed on the conductive mesa 455, which can generate an electric field in the substrate, allowing a post-exposure bake operation to be performed by electric field exposure.

[0055] In some embodiments, the electrical wire 485 can extend all the way to the bias electrode 445 and can be directly coupled to the bias electrode 445. In other embodiments, the electrical wire 485 can be indirectly coupled to the bias electrode 445 via one or more intervening components. For example, as shown, the substrate support assembly 400 can include an edge ring 460. The edge ring 460 can be formed from a conductive material, such as aluminum. The edge ring 460 can include an annular body 462 and a flange 464 that protrudes inward from an inner diameter of the annular body 462. As shown, the flange 464 extends from the top surface of the annular body 462 such that the top surfaces of the flange 464 and the annular body 462 are substantially planar (e.g., within 95%, within 97%, within 99%, or greater), although other configurations are possible in various embodiments. The bottom surface of the flange 464 can extend beyond and / or be disposed on the periphery of the electrostatic chuck body 425. A peripheral edge of the conductive mesh 450 (which may extend radially outward beyond the beveled edge of the supported substrate) may be positioned between the electrostatic chuck body 425 and the bottom surface of the flange 464 and may contact the flange 464. In some embodiments, at least a portion of the conductive mesh 450 that contacts the flange 464 may comprise a conductive material, such as, but not limited to, a metal trace (e.g., gold, silver, nickel, DLC, carbide, nitride, etc.) plated, deposited, and / or otherwise bonded to the conductive mesh 450. The conductive material may provide an electrical connection between the conductive mesh 450 and the edge ring 460, thereby facilitating electrical transfer of the bias voltage from the edge ring 460 to the bias electrode 445. A flexible conductive gasket may be added between 450 and 464 to improve the electrical connection and prevent high forces from being applied to the electrostatic chuck body 425.

[0056] In some embodiments, the substrate support assembly 400 can include a conductive cold plate 465, which can be coupled to the electrostatic chuck body 425. For example, the cold plate 465 can be coupled to a bottom surface of the electrostatic chuck body 425. In some embodiments, the diameter of the cold plate 465 can be larger than the diameter of the electrostatic chuck body 425, such that the peripheral edge of the cold plate 465 extends laterally beyond the peripheral edge of the electrostatic chuck body 425. In such cases, the bottom surface of the annular body 462 of the edge ring 460 can be positioned above and / or disposed (directly or indirectly) on the top surface of the cold plate 465. In some embodiments, the edge ring 460 and the cold plate 465 can be fastened, secured, and / or otherwise coupled together. For example, one or more fasteners (e.g., bolts 466), clamps, or other coupling mechanisms can be used to secure the two components together. In some embodiments, electrical connections 48, such as conductive pins and / or other conductive elements, can be used to electrically couple and / or improve the electrical coupling between the edge ring 460 and the cold plate 465. For example, the annulus 462 and the cold plate 465 can each define one or more recesses, each receiving a respective electrical connection 480. The electrical coupling of the edge ring 460 and the cold plate 465 can allow a bias voltage to be transmitted from the cold plate 465 to the edge ring 460 and then to the bias electrode 445. For example, the cold plate 465 can be directly or indirectly coupled to an electrical wire 485 to couple the cold plate 465 to a power source 490.

[0057] In some embodiments, the electrostatic chuck body 425 can define and / or otherwise include a sealing band 475 that can be positioned radially outward from the various mesas. The sealing band 475 can be substantially flush with the mesas and, in some embodiments, can be sized and positioned to support the periphery of the substrate. The sealing band 475 can be generally annular in shape and, in some embodiments, can be circumferentially continuous or substantially continuous around the mesas (e.g., extending approximately 90% or more, 95% or more, 97% or more, 99% or more, or more). This can enable the sealing band 475 to prevent leakage of inert gas from the backside of the substrate into the processing region. The sealing band 475 can be made of a conductive material and can be formed during the same process as the bias electrode 445. In some embodiments, an electrical connection 480 to the edge ring 460 can be formed on the sealing band 475.

[0058] FIG. 5 shows a schematic partial cross-sectional view of an exemplary substrate support assembly 500 in accordance with some embodiments of the present technique. The substrate support assembly 500 can be similar to the substrate support assemblies 310 and / or 400 and can include any of the features, components, or characteristics of the supports described above, including any associated components or power supplies. The substrate support assembly 500 can include a support mandrel (not shown) and an electrostatic chuck body 525. The electrostatic chuck body 525 can be formed from a dielectric material such as aluminum oxide and / or aluminum nitride. The electrostatic chuck body 525 can define a substrate support surface or substrate pedestal 527. The electrostatic chuck body 525 can define a backside gas lumen 529 that can extend through a surface of the substrate pedestal 527 to supply gas to the backside of the wafer. The support mandrel and / or the electrostatic chuck body 525 can include one or more components embedded or disposed within the body. For example, the electrostatic chuck body 525 can include one or more heaters 535 having one or more heating elements, such as an AC heating coil. Each heating element can be coupled to a power source, such as an AC power source, that delivers AC current to the heater 535 to heat the top puck. The current can be delivered to the heater 535 through one or more rods or wires disposed within channels formed in the mandrel and electrostatic chuck body 525. The substrate support assembly 500 can include one or more embedded chuck electrodes 530. The substrate support assembly 500 can include a bias electrode 545 disposed on the substrate pedestal 527. The bias electrode 540 can be similar to the bias electrode 445 and can include a conductive mesh 550 and multiple conductive mesas 555 projecting upward from a top surface of the conductive mesh 550. In certain embodiments, the chuck electrode 530 can include a monopolar electrode, and the bias electrode 545 can form an opposite polarity to the monopolar chuck electrode 530.

[0059] In contrast to the substrate support assembly 400, the substrate pedestal 527 of the substrate support assembly 500 may not be substantially flat / planar. For example, the surface of the substrate pedestal 527 may define a plurality of additional mesas 570. The additional mesas 570 may be formed from a dielectric material (such as the material used to form the electrostatic chuck body 525) and, in some embodiments, may be integrally formed with the electrostatic chuck body 525. The mesas 570 may have a similar structure to the mesas 555 and may be disposed between adjacent ones of the mesas 555. Any number of mesas 570 may be included. For example, the electrostatic chuck body 525 can define or otherwise include at least or about 100 mesas 570, at least or about 150 mesas 570, at least or about 200 mesas 570, at least or about 250 mesas 570, at least or about 300 mesas 570, at least or about 350 mesas 570, at least or about 400 mesas 570, at least or about 450 mesas 570, at least or about 500 mesas 570, or more. The mesas 570 can be arranged at regular and / or irregular intervals around the substrate pedestal 527. Each mesa 570 can have the same or substantially the same height as each mesa 555 such that when the substrate is chucked, the substrate contacts all or substantially all (e.g., 95%, 97%, 99%, or more) of the different mesas. The presence of mesa 570 can enable electrostatic chuck body 525 to operate as a Johnsen-Rahbek chuck, although other designs are possible.

[0060] FIG. 6 shows a schematic partial cross-sectional view of an exemplary substrate support assembly 600 in accordance with some embodiments of the present technique. The substrate support assembly 600 can be similar to the substrate support assemblies 310, 400, and / or 500 and can include any of the features, components, or characteristics of the supports described above, including any associated components or power supplies. The substrate support assembly 600 can include a support mandrel (not shown) and an electrostatic chuck body 625. The electrostatic chuck body 625 can be formed from a dielectric material such as aluminum oxide and / or aluminum nitride. The electrostatic chuck body 625 can define a substrate support surface or substrate pedestal 627. In some embodiments, the surface of the substrate pedestal 627 can be substantially flat (e.g., at least 95% flat, at least 97% flat, at least 99% flat, or more), and the electrostatic chuck body 625 can operate as a Coulomb chuck, although other designs are possible. The electrostatic chuck body 625 can define a backside gas lumen 629 that can extend through the surface of the substrate pedestal 627 to supply gas to the backside of the wafer. The support mandrel and / or the electrostatic chuck body 625 can include one or more components embedded or disposed within the body. For example, the electrostatic chuck body 625 can include one or more heaters 635 having one or more heating elements, such as an AC heating coil. Each heating element can be coupled to a power source, such as an AC power supply, that delivers AC current to the heater 635 to heat the top puck. The current can be delivered to the heater 635 through one or more rods or wires disposed within channels formed in the mandrel and the electrostatic chuck body 625. The substrate support assembly 600 can include one or more embedded chucking electrodes 630.

[0061] The substrate support assembly 600 may include a bias electrode 645 coupled to the electrostatic chuck body 625. The bias electrode 645 may include a conductive mesh 650, which may be embedded in the electrostatic chuck body 625. For example, in some embodiments, the conductive mesh 650 may be disposed between the chuck electrode 630 and the heater 635, although other configurations are possible. The conductive mesh 650 may define and / or otherwise include a plurality of conductive mesas 655 that protrude upwardly from a top surface of the conductive mesh 650. The conductive mesas 655 may extend upwardly through the electrostatic chuck body 625 and may protrude above and through the surface of the substrate pedestal 627. The top surface of each conductive mesa 655 can be no more than about 10 mils, no more than about 9 mils, no more than about 8 mils, no more than about 7 mils, no more than about 6 mils, no more than about 5 mils, no more than about 4 mils, no more than about 3 mils, no more than about 2 mils, no more than about 1 mil, no more than about 0.5 mils, or no more above the surface of substrate pedestal 627. Together, the mesas can provide a minimal contact support surface for a substrate positioned on substrate pedestal 627, leaving a gap between the bottom surface of the substrate and the surface of substrate pedestal 627 through which insert gas can flow via backside gas lumen 629.

[0062] In some embodiments, the conductive mesh 650 can have a similar structure to the conductive mesh 450, despite being embedded in the electrostatic chuck body 625. Similarly, the arrangement and / or maximum vertical height of the mesas 655 relative to the substrate pedestal 627 can be similar to that described above with respect to the bias electrode 445. While the bias electrode 645 is shown as being disposed below the chuck electrode 630, it will be understood that in some embodiments, the bias electrode 645 can also be positioned above the chuck electrode 630. In certain embodiments, the chuck electrode 630 can include a monopolar electrode, and the bias electrode 645 can form an opposite polarity to the monopolar chuck electrode 630.

[0063] FIG. 7 shows a schematic partial cross-sectional view of an exemplary substrate support assembly 700 in accordance with some embodiments of the present technique. The substrate support assembly 700 may be similar to the substrate support assemblies 310, 400, 500, and / or 600 and may include any of the features, components, or characteristics of the supports described above, including any associated components or power supplies. The substrate support assembly 700 may include a support mandrel (not shown) and an electrostatic chuck body 725. The electrostatic chuck body 725 may be formed from a dielectric material such as aluminum oxide and / or aluminum nitride. The electrostatic chuck body 725 may define a substrate support surface or substrate pedestal 727. The electrostatic chuck body 725 may define a backside gas lumen 729 that may extend through a surface of the substrate pedestal 727 to supply gas to the backside of the wafer. The support mandrel and / or the electrostatic chuck body 725 may include one or more components embedded or disposed within the body. For example, the electrostatic chuck body 725 may include one or more heaters 735 having one or more heating elements, such as an AC heating coil. Each heating element may be coupled to a power source, such as an AC power supply, that delivers AC current to the heater 735 to heat the top puck. The current may be delivered to the heater 735 through one or more rods or wires disposed within channels formed in the mandrel and the electrostatic chuck body 725. The substrate support assembly 700 may include one or more embedded chucking electrodes 730.

[0064] The substrate support assembly 700 may include a bias electrode 745 coupled to the electrostatic chuck body 725. The bias electrode 745 may include a conductive mesh 750, which may be embedded in the electrostatic chuck body 725. For example, in some embodiments, the conductive mesh 750 may be disposed between the chuck electrode 730 and the heater 735, although other configurations are possible. The conductive mesh 750 may define and / or otherwise include a plurality of conductive mesas 755 that protrude upward from a top surface of the conductive mesh 750. The conductive mesas 755 may extend upward through the electrostatic chuck body 725 and may protrude above and through the surface of the substrate pedestal 727. The top surface of each conductive mesa 755 can be no more than about 10 mils, no more than about 9 mils, no more than about 8 mils, no more than about 7 mils, no more than about 6 mils, no more than about 5 mils, no more than about 4 mils, no more than about 3 mils, no more than about 2 mils, no more than about 1 mil, no more than about 0.5 mils, or no more above the surface of the substrate pedestal 627. Together, the mesas can provide a minimum contact support surface for a substrate positioned on the substrate pedestal 727, leaving a gap between the bottom surface of the substrate and the surface of the substrate pedestal 727 through which insert gas can flow via the backside gas lumen 729.

[0065] In some embodiments, the conductive mesh 750 can have a structure similar to the conductive mesh 450, despite being embedded in the electrostatic chuck body 725. Similarly, the arrangement and / or maximum vertical height of the mesas 755 relative to the substrate pedestal 727 can be similar to that described above in connection with the bias electrode 445. In certain embodiments, the chuck electrode 730 can be a bipolar chuck electrode. In another embodiment, the chuck electrode 730 can include a monopolar electrode, and the bias electrode 745 can form an opposite polarity to the monopolar chuck electrode 730.

[0066] In contrast to the substrate support assembly 600, the substrate pedestal 727 of the substrate support assembly 700 may not be substantially flat / planar. For example, the surface of the substrate pedestal 727 may define a plurality of additional mesas 770. The additional mesas 770 may be formed from a dielectric material (such as the material used to form the electrostatic chuck body 725) and, in some embodiments, may be integrally formed with the electrostatic chuck body 725. The mesas 770 may have a structure similar to the mesas 755 and may be disposed between adjacent ones of the mesas 755. Any number of mesas 770 may be included. For example, the electrostatic chuck body 725 can define or otherwise include at least or about 100 mesas 770, at least or about 150 mesas 770, at least or about 200 mesas 770, at least or about 250 mesas 770, at least or about 300 mesas 770, at least or about 350 mesas 770, at least or about 400 mesas 770, at least or about 450 mesas 770, at least or about 500 mesas 770, or more. The mesas 770 can be arranged at regular and / or irregular intervals around the substrate pedestal 727. Each mesa 770 can have the same or substantially the same height as each mesa 755 so that when the substrate is chucked, the substrate contacts all or substantially all (e.g., 95%, 97%, 99%, or more) of the different mesas. The presence of mesa 770 can enable electrostatic chuck body 725 to operate as a Johnsen-Rahbek chuck, although other designs are possible.

[0067] FIG. 8 shows a schematic partial cross-sectional view of an exemplary substrate support assembly 800 in accordance with some embodiments of the present technique. The substrate support assembly 800 may be similar to the substrate support assemblies 310, 400, 500, 600, and / or 700 and may include any of the features, components, or characteristics of the supports described above, including any associated components or power supplies. The substrate support assembly 800 may include a support mandrel (not shown) and an electrostatic chuck body 825. The electrostatic chuck body 825 may be formed from a conductive material, such as aluminum. The electrostatic chuck body 825 may define a substrate support surface or substrate pedestal 827. The electrostatic chuck body 825 may define a backside gas lumen 829 that may extend through a surface of the substrate pedestal 827 to supply gas to the backside of the wafer. The support mandrel and / or the electrostatic chuck body 825 may include one or more components embedded or disposed within the body. For example, the electrostatic chuck body 825 may include one or more heaters 835 having one or more heating elements, such as an AC heating coil. Each heating element may be coupled to a power source, such as an AC power supply, that delivers AC current to the heater 835 to heat the top puck. The current may be delivered to the heater 835 through one or more rods or wires disposed within channels formed in the mandrel and the electrostatic chuck body 825. The substrate pedestal 827 of the substrate support assembly 800 may not be substantially flat / planar. For example, the surface of the substrate pedestal 827 may define a plurality of mesas 870. The mesas 870 may be formed from a conductive material (such as the material used to form the electrostatic chuck body 825) and, in some embodiments, may be integrally formed with the electrostatic chuck body 825. The conductive material of the electrostatic chuck body 825 and the mesas 870 may enable the electrostatic chuck body 825 to act as a bias electrode, similar to that described above. For example, the electrostatic chuck body 825 can be coupled to a power source, such as a DC power source, that can apply a DC bias to the electrostatic chuck body 825 .A DC voltage applied to the electrostatic chuck body 825 can electrically bias a substrate supported on the mesas 870, generating an electric field across the substrate. The mesas 870 can have a structure similar to those described herein. Any number of mesas 870 can be included. For example, the electrostatic chuck body 825 can define or otherwise include at least or about 100 mesas 870, at least or about 150 mesas 870, at least or about 200 mesas 870, at least or about 250 mesas 870, at least or about 300 mesas 870, at least or about 350 mesas 870, at least or about 400 mesas 870, at least or about 450 mesas 870, at least or about 500 mesas 870, or more. The mesas 870 can be arranged at regular and / or irregular intervals around the substrate pedestal 827. Each mesa 870 can have the same or substantially the same height as each mesa 855 so that when the substrate is chucked, the substrate contacts all or substantially all (e.g., 95%, 97%, 99%, or more) of the different mesas. The conductive substrate support assembly 800 can operate as a Coulomb chuck, although other designs are possible.

[0068] The substrate support assembly 800 may include a polymer material 860 bonded onto the substrate pedestal 827 between each of the mesas 870. In some embodiments, the polymer material 860 may be formed from a dielectric polymer such as polyamide. One or more chuck electrodes 830 may be embedded within the polymer material 860, and in various embodiments, the chuck electrodes 830 may be monopolar, bipolar, and / or multipolar. The chuck electrodes 830 may be coupled to one or more power sources capable of supplying a chucking current to enable the substrate support assembly 800 to operate as an electrostatic chuck, such as a Coulomb chuck. In certain embodiments, the chuck electrodes 830 may be bipolar and / or multipolar. In another embodiment, the chuck electrode 830 may include a monopolar electrode, and a bias electrode formed from the electrostatic chuck body 825 may form an opposite polarity to the monopolar chuck electrode 830.

[0069] 9 illustrates operations of an exemplary semiconductor processing method 900 in accordance with some embodiments of the present technique. The method may be performed in a variety of processing chambers, including the processing system 200 or chamber 300 described above, which may include a substrate support assembly in accordance with embodiments of the present technique, such as the substrate support assemblies 310, 400, 500, 600, 700, and / or 800 described herein. The method 900 may include multiple optional operations, which may or may not be specifically associated with some embodiments of methods in accordance with the present technique.

[0070] Method 900 can include processing methods that can include operations for forming a hard mask film or other deposition operations, performing a post-exposure bake with electric field exposure, and / or other processing operations. The method can include any operations before the start of method 900, or the method can include additional operations. For example, method 900 can include operations performed in a different order than shown. In operation 905, a substrate, such as a semiconductor substrate, can be positioned on a substrate support assembly. For example, the substrate can be positioned on multiple conductive mesas (or optionally multiple dielectric mesas) arranged around a substrate pedestal of an electrostatic chuck body. In operation 910, the substrate can be secured to a support surface of a substrate platform using a chucking voltage applied to one or more chucking electrodes. In operation 915, a bias voltage, such as a DC bias voltage, can be applied to the substrate using a bias electrode formed from and / or coupled to the electrostatic chuck body. The bias voltage can generate an electric field in the substrate, which can enable a post-exposure bake with electric field exposure operation and / or other deposition operation to be performed. In operation 920, one or more precursors can be flowed into the processing chamber. For example, precursors, such as those contained in chamber 300, may be flowed into the chamber. In operation 925, a plasma may be generated from the precursors in the processing region.

[0071] The process 900 may include flowing an inert gas, such as helium, to the backside of the substrate after the substrate is secured to the electrostatic chuck body in operation 930. The inert gas may flow through the gap between the substrate and the electrostatic chuck body and thermally couple the substrate to the electrostatic chuck body. This may enhance heat transfer between the bodies and help heat the substrate more quickly and uniformly. This may help improve film uniformity on the substrate and increase chamber throughput due to the increased heating rate. In some embodiments, the method 900 may include heating the top surface of the electrostatic chuck body in operation 935. For example, AC current may be supplied to one or more heating elements to heat the top of the electrostatic chuck body. While the substrate and / or support may be heated to any of the temperatures previously described, in some embodiments, the substrate support may be heated to a temperature of about 80° C. or greater, and may be heated to a temperature of about 500° C. or less, about 400° C. or less, about 300° C. or less, or less. Heat may be applied before, during, and / or after chucking the substrate. In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0072] It will be understood that the various operations of process 900 can be performed in different orders, and that some of the operations can be performed in parallel. For example, applying a bias voltage, flowing precursors, and / or generating a plasma can be performed in parallel with flowing a backside gas and / or heating a substrate. In addition, applying a bias voltage, flowing precursors, and / or generating a plasma can be performed sequentially and / or in parallel with each other. Similarly, flowing a backside gas can be performed sequentially and / or in parallel with heating a substrate.

[0073] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of these embodiments. Additionally, in order to avoid unnecessarily obscuring the present technology, several well-known processes and elements have not been described. Therefore, the above description should not be considered as limiting the scope of the present technology.

[0074] Where a range of values ​​is provided, unless the context clearly dictates otherwise, it is understood that each intermediate value between the upper and lower limits of that range is also specifically disclosed, to the smallest decimal point of the lower limit. Narrower ranges between any stated value or unstated intermediate value within a stated range, and any other stated value or intermediate value within that stated range, are encompassed. The upper and lower limits of these smaller ranges may be independently included or excluded within the range, and any specifically excluded limit within a stated range also encompasses within the scope of the present technology any range that includes either of the limits within the smaller range, a range that does not include either of the limits, or a range that includes both of the limits. When a stated range includes one or both of the limits, it also encompasses ranges that exclude either or both of those included limits.

[0075] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to "a heater" includes a plurality of such heaters, a reference to "the mesh" includes a reference to one or more meshes and equivalents thereof known to those skilled in the art, and so forth.

[0076] Additionally, the words "comprise(s)," "comprising," "contain(s)," "containing," "include(s)," and "including," when used in this specification and the claims that follow, are intended to specify the presence of stated features, integers, components, or operations, but do not exclude the presence or addition of one or more other features, integers, components, operations, acts, or groups.

Claims

1. an electrostatic chuck body defining a substrate support surface defining a substrate pedestal, the electrostatic chuck body defining a backside gas lumen extending through a surface of the substrate pedestal; a bias electrode coupled to the electrostatic chuck body, the bias electrode comprising a plurality of conductive mesas projecting upwardly over the substrate pedestal; a support mandrel coupled to the electrostatic chuck body; at least one chucking electrode embedded in the electrostatic chuck body; at least one heater embedded in the electrostatic chuck body; A substrate support assembly comprising:

2. the bias electrode comprises a conductive mesh disposed on the surface of the substrate pedestal; The substrate support assembly of claim 1 .

3. an edge ring coupled to a periphery of the electrostatic chuck body, the edge of the bias electrode comprising a conductive element contacting the edge ring; a cooling plate disposed below the electrostatic chuck body, the cooling plate being coupled to a bottom surface of the edge ring; an electrical connection between the edge ring and the cooling plate; The substrate support assembly of claim 1 , further comprising:

4. the plurality of conductive mesas are provided with a wear-resistant conductive coating; The substrate support assembly of claim 1 .

5. the electrostatic chuck body operates as a Johnsen-Rahbek chuck; the electrostatic chuck body defines a plurality of additional mesas projecting from the surface of the substrate pedestal; The substrate support assembly of claim 1 .

6. a power supply electrically coupled to the bias electrode The substrate support assembly of claim 1 , further comprising:

7. the at least one heater comprises one or more upper heaters and one or more lower heaters; The substrate support assembly of claim 1 .

8. the one or more top heaters include a plurality of pixel heaters; the plurality of pixel heaters including a plurality of heaters at different angular positions relative to a center of the substrate pedestal and a plurality of heaters at different radial positions relative to the center of the substrate pedestal; the one or more lower heaters include a plurality of zone heaters; The substrate support assembly of claim 7 .

9. the plurality of zone heaters Multiple wedge heaters, a plurality of arc-shaped heaters; a central circular heater, and one or more heaters selected from the group consisting of one or more annular heaters concentric with the central circular heater; The substrate support assembly of claim 8 .

10. the bias electrode is embedded in the electrostatic chuck body, and the plurality of conductive mesas protrude through the surface of the substrate pedestal. The substrate support assembly of claim 1 .

11. an electrostatic chuck body defining a substrate support surface defining a substrate pedestal, the electrostatic chuck body defining a backside gas lumen extending through a surface of the substrate pedestal; a bias electrode comprising a conductive mesh disposed on the surface of the substrate pedestal, the bias electrode comprising a plurality of conductive mesas projecting upwardly from the conductive mesh; a support mandrel coupled to the electrostatic chuck body; at least one chucking electrode embedded in the electrostatic chuck body; at least one heater embedded in the electrostatic chuck body; A substrate support assembly comprising:

12. an edge ring coupled to a periphery of the electrostatic chuck body, the edge of the bias electrode comprising a conductive element contacting the edge ring; a cooling plate disposed below the electrostatic chuck body, the cooling plate being coupled to a bottom surface of the edge ring; an electrical connection between the edge ring and the cooling plate; The substrate support assembly of claim 11 , further comprising:

13. the electrostatic chuck body operates as a Coulomb chuck; the surface of the substrate pedestal is substantially flat and is free of any of the plurality of conductive mesas; The substrate support assembly of claim 11 .

14. the conductive mesh comprising an inner ring, an outer ring, and a plurality of spokes connecting the inner ring and the outer ring; The substrate support assembly of claim 11 .

15. the conductive mesh further comprising a middle ring disposed between the inner ring and the outer ring; the intermediate ring is coupled to the plurality of spokes; The substrate support assembly of claim 14 .

16. At least 75% of the surface area of ​​the surface of the substrate pedestal does not include mesas; The substrate support assembly of claim 11 .

17. an electrostatic chuck body defining a substrate support surface defining a substrate pedestal, the electrostatic chuck body defining a backside gas lumen extending through a surface of the substrate pedestal; a bias electrode coupled to the electrostatic chuck body, the bias electrode comprising a plurality of conductive mesas projecting upwardly over the substrate pedestal; an edge ring coupled to a periphery of the electrostatic chuck body, the edge of the bias electrode comprising a conductive element contacting the edge ring; a cooling plate disposed below the electrostatic chuck body, the cooling plate being coupled to a bottom surface of the edge ring; an electrical connection between the edge ring and the cooling plate; a support mandrel coupled to the electrostatic chuck body; at least one chucking electrode embedded in the electrostatic chuck body; at least one heater embedded in the electrostatic chuck body; A substrate support assembly comprising:

18. further comprising an additional plurality of mesas having a first diameter, the plurality of mesas having a second diameter greater than the first diameter.

20. The substrate support assembly of claim 17.

19. the substrate support assembly comprises a plurality of additional mesas that are greater than the plurality of conductive mesas; 20. The substrate support assembly of claim 18.

20. the additional mesas comprise the same material as the conductive mesas; 20. The substrate support assembly of claim 18.

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