Spray-coated electrostatic chuck design
The substrate support assembly with dielectric coating and lift pin sleeves addresses coating inconsistencies near lift pins, reducing arcing risks and enhancing manufacturing efficiency and yield in semiconductor processing.
Patent Information
- Application Number
- JP2025544406
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-01-30
- Filing Date
- 2024-01-08
- Publication Date
- 2026-01-28
AI Technical Summary
Existing substrate support assemblies in semiconductor manufacturing face challenges with incomplete or porous coatings near lift pins, leading to arcing risks and inconsistent performance, which affect the reliability and efficiency of substrate processing.
A substrate support assembly with a dielectric coating and lift pin sleeves, featuring chamfered surfaces and patterns, is designed to enhance coating uniformity and prevent arcing, ensuring consistent substrate support and improved manufacturing throughput.
The solution provides a reliable and efficient substrate support system that minimizes arcing risks, enhances coating uniformity, and improves manufacturing yield and throughput by ensuring consistent coating coverage around lift pins.
Smart Images

Figure 2026503325000001_ABST
Abstract
Description
[Technical Field]
[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to semiconductor chamber components, and more particularly to sleeve and substrate plate assemblies used in substrate support. [Background technology]
[0002] Reliable fabrication of sub-nanometer features is one of the key technological challenges for next-generation very large-scale integration (VLSI) and ultra-large-scale integration (ULSI) semiconductor devices. However, as the limits of circuit technology are pushed, shrinking dimensions of VLSI and ULSI interconnect technologies are placing further demands on processing power. Reliable formation of gate structures on substrates is critical to the success of VLSI and ULSI and the continuing effort to increase circuit density and quality on individual substrates and dies.
[0003] To reduce manufacturing costs, integrated chip (IC) manufacturers demand higher throughput, better device yields, and superior performance for every silicon substrate processed. Some manufacturing techniques being investigated for next-generation semiconductor device manufacturing require processes that are free from the risk of arcing between various components of the substrate support assembly. While coatings are often applied to components to prevent arcing, surfaces with small features often have incomplete or porous coatings. A critical area of the substrate support is the area near the lift pins. The lift pins are used to raise and lower the substrate on the substrate support assembly. The lift pins pass through a small area of the substrate support assembly. Previous designs have had poor and / or inconsistent coating properties in the areas of the substrate support assembly where the lift pins pass.
[0004] Therefore, there is a need for an improved substrate support assembly that addresses the above-mentioned problems. Summary of the Invention
[0005] FIELD OF THE DISCLOSURE Embodiments of the present disclosure generally relate to a substrate support body having lift pin sleeves on the body. More particularly, embodiments described herein provide an apparatus and method for a substrate support assembly body having a coating and lift pin holes.
[0006] In one embodiment, a substrate support is provided. The substrate support includes a metal body having a substrate surface, a plurality of lift pin holes formed in the body, and a dielectric coating disposed on the substrate surface of the body. Each of the plurality of lift pin holes includes a through hole and a chamfer surface configured to mate with a lift pin sleeve. The dielectric coating includes a substrate support surface, a thickness, and a pattern disposed on the substrate support surface.
[0007] In another embodiment, an electrostatic chuck assembly is provided. The electrostatic chuck assembly is configured to support a substrate when the substrate is disposed on the electrostatic chuck, and includes an electrostatic chuck assembly body, a substrate surface configured to face the substrate, a dielectric coating disposed on the body, a plurality of lift pin holes disposed in the body, and a plurality of lift pin sleeves disposed in the plurality of lift pin holes. The dielectric coating includes a top portion, a thickness, and a pattern disposed on the substrate surface. Each of the plurality of lift pin holes includes a top surface coated with the dielectric coating, a chamfer surface coated with the dielectric coating, and a depth. Each of the plurality of lift pin sleeves includes a sleeve material, a sleeve body, a substrate surface, a pin hole disposed through the sleeve body, and a chamfer disposed outside the sleeve body.
[0008] In yet another embodiment, a method of manufacturing a body for an electrostatic chuck assembly is provided, the method including the steps of forming a body having a substrate surface and a base surface, planarizing the substrate surface and the base surface of the body, forming a plurality of lift pin holes through the body, chamfering the plurality of lift pin holes in the substrate surface of the body, coating the body with a dielectric coating, cutting a pattern in the dielectric coating, and polishing the dielectric coating.
[0009] Embodiments of the present disclosure include a method of manufacturing a body for an electrostatic chuck assembly, the method including the steps of forming a body including a substrate surface and a base surface, forming a plurality of lift pin holes through the substrate surface of the body to the base surface of the body, chamfering the plurality of lift pin holes in the substrate surface of the body, coating the body with a dielectric coating, forming a pattern in the dielectric coating disposed on the substrate surface, and polishing the dielectric coating disposed on the substrate surface.
[0010] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting the scope thereof, as other equally effective embodiments may be recognized. [Brief explanation of the drawings]
[0011] [Figure 1] 1 is a cross-sectional schematic view of an exemplary plasma processing chamber according to one embodiment. [Figure 2] 1 is a schematic cross-sectional view of an exemplary substrate support assembly according to one embodiment. [Figure 3] 3 is a cross-sectional schematic view of a portion of the substrate support assembly of FIG. 2. [Figure 4] 1 is a cross-sectional schematic view of a sleeve disclosed herein. [Figure 5] 1 is a cross-sectional schematic view of a sleeve disclosed herein. [Figure 5A] 1 is a cross-sectional schematic view of a sleeve disclosed herein. [Figure 6] 1 is a cross-sectional schematic view of a sleeve disclosed herein. DETAILED DESCRIPTION OF THE INVENTION
[0012] For ease of understanding, wherever possible, like reference numerals have been used to designate like elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
[0013] Embodiments of the present disclosure generally relate to electrostatic chuck assemblies suitable for use in semiconductor manufacturing processes. In one or more embodiments, the electrostatic chuck assemblies are used at high processing temperatures above 50°C, such as above 150°C. In one or more alternative embodiments, the electrostatic chuck assemblies are used at cryogenic processing temperatures below 0°C and below -10°C, such as about -50°C. For example, the electrostatic chuck assemblies are used at cryogenic processing temperatures between about -50°C and about -150°C.
[0014] 1 shows a cross-sectional schematic view of an exemplary plasma processing chamber 100 configured as an etch chamber having a substrate support assembly 126. The substrate support assembly 126 can be utilized in other types of processing plasma chambers, such as, for example, plasma processing chambers, annealing chambers, physical vapor deposition (PVD) chambers, chemical vapor deposition (CVD) chambers, ion implantation chambers, among others, as well as other systems in which the ability to control processing uniformity of a surface or substrate is desirable.
[0015] The plasma processing chamber 100 includes a chamber body 102 having a sidewall 104, a bottom 106, and a lid 108 that surround an interior processing region 110. An injector 112 is coupled to the sidewall 104 and / or the lid 108 of the chamber body 102. A gas panel 114 is coupled to the injector 112 to deliver process gases into the processing region 110. The injector 112 may be one or more nozzles or inlet ports, or a showerhead. In other embodiments, the injector assembly 112 may be replaced by a PVD target or gas-delivery showerhead. The process gases, along with any processing by-products, are removed from the processing region 110 through an exhaust port 128 formed in the sidewall 104 or bottom 106 of the chamber body 102. The exhaust port 128 is coupled to a pumping system 132, which includes a throttle valve and a pump, that is utilized to control the vacuum level within the processing region 110.
[0016] In some embodiments, the process gas can be excited to form a plasma in the process region 110. The process gas may be excited by capacitively or inductively coupling RF power to the process gas. In one example shown in Figure 1, multiple coils 116 are positioned above the lid 108 of the plasma processing chamber 100 and are coupled to an RF power source 120 through a matching network 118.
[0017] The substrate support assembly 126 is disposed within the processing region 110 below the implanter 112. The substrate support assembly 126 includes an electrostatic chuck (ESC) assembly 184 and an equipment plate 145. The equipment plate 145 is supported by a base stand 176. The base stand 176 is supported by one of the sidewalls 104 and / or the bottom 106 of the processing chamber. The substrate support assembly 126 may further include a heater assembly (not shown). Additionally, the substrate support assembly 126 may include the equipment plate 145 and / or an insulating plate 144 disposed between the ESC assembly 184 and the base stand 176 to facilitate electrical, cooling, and gas connections to the substrate support assembly 126.
[0018] The facilities plate 145 is formed from or otherwise includes one or more metallic materials. The facilities plate 145 may include a plurality of cooling channels formed therein. The cooling channels may be connected to a heat transfer fluid source (not shown). The heat transfer fluid source provides a heat transfer fluid, such as a liquid, gas, or a combination thereof, that circulates through one or more cooling channels disposed within the facilities plate 145. Fluid flowing through adjacent cooling channels may be separated to enable localized control of heat transfer between the ESC assembly 184 and different regions of the facilities plate 145, thereby facilitating control of the lateral temperature profile of the substrate 124.
[0019] The ESC assembly 184 includes one or more chuck electrodes 186 disposed therein. The chuck electrodes 186 are connected to a power supply 187. In some embodiments, the ESC assembly 184 is a monopolar ESC, and the chuck electrodes 186 bias the ESC assembly 184 using the power supply 187 to secure the substrate during the deposition process. The power supply 187 is connected to the ESC assembly 184 and generates an electrical bias using the electrodes 186. The power supply 187 may be connected at a connection 190 via a threaded connection or other suitable connection method. The ESC assembly 184 is disposed between the processing region 110 and the equipment plate 145. The ESC assembly 184 has a substrate support surface 137 and an equipment plate surface 133 opposite the substrate support surface 137. The substrate support surface 137 of the ESC assembly 184 contacts the substrate 124 on the ESC surface 182 of the substrate 124. In some embodiments, the substrate support surface 137 is the top surface of the coating.
[0020] The plasma processing chamber 100 also includes a lift pin assembly. The lift pin assembly includes an actuator 146 that can be coupled to at least a portion of the chamber walls 104, 106, 108. The lift pin assembly also includes a bellows 147. The bellows 147 seals the actuator 146 from the process region 110. The lift pin assembly also includes a lift pin plate 148 configured to elevate a plurality of lift pins 149. The lift pins are coupled to the lift pin plate 148. The lift pin plate 148 is coupled to the actuator 146. Lift pin holes 300 (shown in FIG. 3 ) allow the lift pins 149 to pass through the ESC assembly 184, corresponding to the lift pins 149 lifting the substrate 124 above the substrate support surface 137. The substrate 124 is elevated above the substrate support surface 137 to facilitate movement of a robotic transfer unit into and out of the plasma processing chamber 100.
[0021] A bonding layer is disposed between the facilities plate 145 and the ESC assembly 184. The bonding layer secures the ESC assembly 184 to the facilities plate 145. In other embodiments, the bonding layer is disposed between the ESC assembly 184 and a lower plate (not shown) disposed between the ESC assembly 184 and the facilities plate 145. In some embodiments, the ESC assembly 184 and the facilities plate 145 are bonded by mechanical means, but may also be bonded by adhesive or any combination of means.
[0022] FIG. 2 shows a schematic cross-sectional side view of an ESC upper region 200 according to one or more embodiments described and discussed herein. The ESC upper region 200 shows the ESC assembly 184 disposed between the substrate 124 and the facilities plate 145. According to some embodiments, the ESC assembly 184 and the facilities plate 145 are a single body. The substrate 124 includes a process surface 124a facing the process volume and a support surface 124b in contact with the substrate surface 180a of the ESC assembly 184. The ESC assembly 184 includes an outer surface 201 that extends radially along the diameter of the ESC assembly 184. The diameter of the ESC assembly 184 may be between about 100 mm and about 600 mm, for example, between 200 mm and about 500 mm. The outer surface 201 has a width equal to the thickness of the ESC assembly 184. The width of the ESC assembly 184 may be defined by the distance between the substrate surface 180a and the base surface 180b of the ESC assembly 184. The width of the outer surface 201 may be from about 5 mm to about 35 mm, for example, from about 5 mm to about 25 mm. The ESC assembly 184 is made of a material that may include stainless steel, aluminum, or titanium, or any combination thereof, although other materials are contemplated. In some embodiments, the ESC assembly 184 has edge features, such as shoulders, upon which an edge ring may be positioned or which may minimize gaps around the ESC assembly 184. FIG. 3 further illustrates lift pin holes 300 in the ESC assembly 184.
[0023] FIG. 3 shows a more detailed view of lift pin holes 300 through the ESC assembly 184. The ESC assembly 184 includes a chuck plate body 180, according to some embodiments. The lift pin holes 300 include a lift pin region 307. The lift pin region 307 is an area on the substrate surface 180a of the body 180 of the ESC assembly 184 that includes a chamfer surface 301 of the lift pin holes 300. The chamfer surface 301 terminates at the beginning of a hole body region 321 within the body 180. The chamfer surface 301 has a chamfer lateral thickness 319 and a chamfer depth 317. The thickness and depths 317, 319 may range from about 1 mm to about 20 mm and may be equal or different. For example, the thickness and depths 317, 319 may range from about 1 mm to about 15 mm. The chamfer surface 301 forms an angle 309 with the body substrate surface 180a. Chamfer surface 301 forms angle 311 with pin hole wall 303. Angles 309, 311 may each be between about 90° and about 180°. Angles 309, 311 may be equal or different. For example, angles 309, 311 may both be 135°. As shown, pin hole wall 303 has left side 303a and right side 303b. Hole body region 321 of lift pin hole 300 has diameter 313. Diameter 313 may be between about 1 mm and about 40 mm, for example, between about 5 mm and about 30 mm. Lift pin hole 300 also includes an outer diameter 323 of chamfer surface 301, which is defined by the sum of diameter 313 and twice the lateral width 319 of chamfer surface 301. Hole body region 321 has a depth 315. For example, body depth 315 may be from about 10 mm to about 120 mm. For example, body depth 315 may be from about 20 mm to about 120 mm. Chamfer depth 317 and body depth 315 are equal to the width between body substrate surface 180a and body base surface 180b. In addition to chamfers, other embodiments of lift pin holes 300 include lift pin holes 300 with fillets, lift pin holes 300 with recessed shoulders, lift pin holes 300 that are square holes, and / or lift pin holes 300 without features.
[0024] FIG. 4 illustrates one embodiment of an ESC assembly 184 having a body 180, a sleeve assembly 400 installed within the body 180, and a coating 401 disposed on the body. In some embodiments, the body 180 has a coating 401 including a dielectric material disposed on the substrate surface 180a of the body 180 and a lift pin sleeve 409 inserted into the lift pin hole 300. In some embodiments, the coating 401 includes a dielectric material such as aluminum oxide, magnesium oxide, zirconium oxide, chromium oxide, titania, yttria-stabilized zirconia, and magnesium aluminate. The coating 401 has a top surface 403 and a thickness 405 between the top surface 403 and the substrate surface 180a of the body 180. For example, the thickness 405 is between about 0 mm and about 0.7 mm, e.g., between about 0.01 mm and about 0.5 mm. The coating 401 also includes a pattern formed on the top surface 403 by a machining process. The pattern may be a mesa pattern having individual square mesas 450 that are higher than the remainder of the top surface 403. In some embodiments, the tops of the mesas 450 are the substrate support surface 137. Each mesa 450 has a height 451 from the top surface 403 and a width 453. For example, the height 451 may be about 0 mm to about 0.7 mm, e.g., about 0.01 mm to about 0.5 mm. For example, the width 453 may be about 0 mm to about 0.7 mm, e.g., about 0.01 mm to about 0.5 mm. The pattern may also have any other suitable design. The coating 401 extends along the chamfered surface 301 to a depth 407 and has a thickness 435 along the chamfered surface 301. For example, the thickness 435 is about 2 mm to about 5 mm. For example, the depth 407 is about 0 mm to about 15 mm. When coating 401 is applied using a sprayer, overspray can occur and contact certain areas of lift pin bores 300. To mitigate overspray, filler components can be inserted into the lift pin bores during the coating process. For example, if the design does not want coating 401 in the uncoated length 421, a temporary component can be inserted to ensure that the coating is contained only on the chamfer face 301.The coating 401 on the chamfer surface 301 can prevent contact between the substrate 127 and the body 180. The lift pin hole 300 can include an uncoated length 421, defined as the distance from the depth 407 to the base surface 180b. The uncoated length 421 can be between about 1 mm and about 100 mm. The chamfer coating 425 forms an angle 427 with the mating surface 417 that contacts the lift pin sleeve 409. For example, the angle 427 can be approximately equal to the chamfer surface angle 311. In some embodiments, the angle 427 can be between about 90° and about 180°.
[0025] Body 180 may be formed from a sheet or plate of material, which can be machined to provide the desired features and dimensions for body 180. Once formed, body 180 has lift pin holes 300 with chamfered surfaces 301. Body 180 is then coated with a dielectric coating 401. Coating 401 may be sprayed and / or applied by manual means, for example, painted on. Other application means, such as electroplating processes, are also contemplated. Once coated, coating 401 is polished and a pattern is cut into coating 401. After the pattern is cut, lift pin sleeves 409 are secured within lift pin holes 300.
[0026] The lift pin sleeve 409, according to some embodiments, includes a sleeve body 423 and a chamfer region 415. The sleeve body 423 includes an inner diameter 429, an outer body diameter 430, and a body thickness 431. The inner diameter 429 can be approximately 4 mm to approximately 12 mm in diameter. The outer body diameter 430 can be approximately 8 mm to approximately 22 mm, and is sized to fit within the diameter 313 formed in the body 180. The body thickness 431 of the lift pin sleeve 409 can be approximately 4 mm to approximately 18 mm. The chamfer region 415 includes a top surface 411, a corner 413, and a seating distance 433 defined by the distance measured from the coating top surface 403 to the sleeve top surface 411. The seating distance 433 can be 0 mm to approximately 5 mm. In some embodiments, the total depth 419 is defined from the coating top surface 403 to the chuck plate base surface 180b. Total depth 419 can be from about 5 mm to about 25 mm. In some embodiments, if ESC assembly 184 and facilities plate 145 are unitary, depth 419 is the depth of the facilities plate plus about 5 mm to about 25 mm. In some embodiments, sleeve is secured to ESC assembly 184 by at least a press fit, an interference fit, an adhesive, and / or any combination thereof. Other methods of securing sleeve 409 are also contemplated.
[0027] 5, 5A, and 6 show three embodiments of the lift pin sleeve 409, including methods for securing the sleeve 409 within the ESC assembly 184.
[0028] FIG. 5 shows a threaded embodiment 500 of the lift pin sleeve 409 and body 180, including threads 505, 511. The lift pin sleeve 409 has a threaded region 513 having a top 509, an inner diameter 429, an outer diameter 519, and a length. The sleeve threads 511 are standard thread sizes, with pitch, thread angle, inner diameter, and outer diameter depending on the design. As shown, the threads 511 are pointed threads, although other threads, such as square threads or tapered threads, are also contemplated. In some embodiments, the threads are fine threads (e.g., UNF (unified national fine) threads) to minimize trapped fluid volume between mating thread sets, allowing for efficient evacuation of the threaded region during processing. The threaded region 513 may extend to the sleeve bottom 515, but can also include a tip feature 518. The length of the threaded region 513 can be from about 25 mm to about 35 mm, but typically includes at least three interlocking threads, at a minimum. As shown, the tip feature 518 is an indexing portion that does not have threads. The alignment or indexing feature 518 is unthreaded over its length 517. The length 517 may be from 0 to about 25 mm, for example, from about 5 mm to about 15 mm. The sleeve threads 511 thread into the plate threads 505. The plate threads 505 have a start point 503 at the end of the chamfer surface 301 and an end point 507. The lift pin hole 300 has a diameter 313 that is concentric with the sleeve outer diameter 519. The thread start point 503 can be recessed further within the lift pin hole 300; for example, the start point 503 can be recessed by about 10 mm. As shown, the threads terminate at the end point 507, which is the chuck plate base surface 180b. End point 507 may be within lift pin hole 300 and offset from base surface 180b, for example, end point 507 may be offset from base surface 180b by about 0 mm to about 10 mm. Plate thread 505 has length 501 defined by start point 503 and end point 507. Length 501 may be about 5 mm to about 15 mm.The lift pin sleeve 409 is threaded into the body 180 to a particular depth. This depth can be the depth at which the sleeve top 509 is coplanar with the coating top 403. Additionally, the lift pin sleeve 409 can be threaded so that the surface of the sleeve top 509 is above or below the top 403 of the coating 401. For example, the sleeve 409 can be threaded to align the sleeve top 509 with the body substrate surface 180a.
[0029] FIG. 5A shows an embodiment similar to FIG. 5 with the addition of sleeve shoulder 550. Sleeve shoulder 550 has a width of about 0 mm to 10 mm, for example, 5 mm to about 7 mm. Sleeve shoulder 550 corresponds to hole shoulder 551. Hole shoulder 551 has a width of about 0 mm to 10 mm, for example, 5 mm to about 7 mm. In some embodiments, coating 401 continues from chamfer coating 425 onto hole shoulder 551.
[0030] FIG. 6 illustrates a nut embodiment 600 for the lift pin sleeve 409 and body 180, with the lift pin sleeve 409 secured to the body 180 by a nut 615. In some embodiments, the lift pin sleeve 409 has a sleeve top 509, an inner diameter 429, an outer diameter 625, and a lower threaded portion 611. The outer diameter 625 can be between about 5 mm and about 10 mm. The lower threaded portion 611 includes threads 601 extending over a thread length 603. The thread length 603 can be between about 0 mm and about 15 mm. The sleeve threads 603 mate with nut threads 605. The nut 615 can be round, a hex nut, or any other suitable nut shape. The nut 615 may be made of a Teflon™-containing material, a PEEK™-containing material, and / or a Rexolite™-containing material, and / or any other suitable material. For example, the nut may be made of a material including a non-conductive ceramic. The nut 615 has a thickness 607 and a diameter 627, or outermost point, sized to fit within a nut recess 621 in the body 180. For example, the nut diameter 627 may be approximately 20 mm to approximately 31 mm, and the nut thickness 607 may be approximately 5 mm to approximately 20 mm. The nut recess 621 has a diameter 619 and a depth 617. The nut recess diameter 619 may be approximately 25 mm to approximately 45 mm. The nut recess depth 617 may be approximately 5 mm to approximately 20 mm. In some embodiments, the nut recess 621 is configured to secure an ASME B1.1, UNC standard 5 / 8 inch nut to the lift pin sleeve 409 when the nut 615 body is between the body substrate surface 180a and the base surface 180b. The diameter 619 is concentric with the inner diameter 313. In other embodiments, the nut recess 621 is not concentric with the lift pin bore inner diameter 313. Additionally, in other embodiments, the recess 621 may be square or scale-shaped and designed to hold the nut 615 in place while the sleeve 409 is threaded. Additionally, the nut 615 can tighten the lift pin sleeve 409 so that the surface of the sleeve top 509 is above or below the top 403 of the coating 401.For example, nut 615 can be tightened to align sleeve top 509 with body substrate surface 180a.
[0031] While the foregoing is directed to examples of the present disclosure, other and further examples of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the appended claims.
Claims
1. a body having a substrate surface, the body comprising a metal; a plurality of lift pin holes formed in the body, each of the plurality of lift pin holes comprising: through holes, and a chamfer surface extending between the substrate surface and the through-hole, the chamfer surface configured to mate with one of the plurality of lift pin sleeves; a plurality of lift pin holes, a dielectric coating disposed on the substrate surface and the chamfer surface, a substrate support surface; thickness, and a pattern disposed on the substrate support surface; a dielectric coating comprising: A substrate support comprising:
2. Further comprising a plurality of lift pin sleeves, each of the plurality of lift pin sleeves comprising: a bore body comprising a sleeve material; A substrate surface; a pinhole disposed through the body; a chamfer disposed on the exterior of the body; a threaded region disposed on the exterior of the body; and The substrate support of claim 1 , comprising:
3. Further comprising a plurality of lift pin sleeves, each of the plurality of lift pin sleeves comprising: A sleeve body; a male screw disposed on the outside of the sleeve body; The substrate support of claim 1 , comprising:
4. 4. The substrate support of claim 3, further comprising a plurality of lift pin sleeves and a plurality of sleeve nuts, wherein the sleeve nut is configured to secure a surface of one of the plurality of lift pin sleeves to a portion of the dielectric coating disposed on the body.
5. 1. An electrostatic chuck assembly configured to support a substrate when the substrate is disposed on the electrostatic chuck, comprising: a body of the electrostatic chuck assembly; a substrate surface configured to face the substrate; a dielectric coating disposed on the body; top, thickness, and a pattern disposed on the substrate surface a dielectric coating comprising: a plurality of lift pin holes disposed in the body, each of the plurality of lift pin holes comprising: a top surface coated with said dielectric coating; a chamfered surface coated with the dielectric coating; and Depth a plurality of lift pin holes, a plurality of lift pin sleeves disposed within the plurality of lift pin holes, each of the plurality of lift pin sleeves comprising: a sleeve body including a sleeve material; Substrate surface, a pin hole disposed through the sleeve body; and A chamfer disposed on the outside of the sleeve body a plurality of lift pin sleeves, An electrostatic chuck assembly comprising:
6. 6. The electrostatic chuck assembly of claim 5, wherein each of the plurality of lift pin sleeves includes a threaded region extending from a base of the chamfer to near a bottom surface of the lift pin sleeve body.
7. 6. The electrostatic chuck assembly of claim 5, wherein each of the plurality of lift pin sleeves includes a threaded region in a lower region of the lift pin sleeve body, extending to near a bottom surface of the lift pin sleeve.
8. The electrostatic chuck assembly of claim 7 , wherein the threaded region of each of the plurality of lift pin sleeves is configured to be threaded onto a sleeve nut.
9. The electrostatic chuck assembly of claim 8 , wherein the sleeve nut is constructed from the sleeve material.
10. The electrostatic chuck assembly of claim 5 , wherein the sleeve material comprises a Teflon-containing material.
11. 6. The electrostatic chuck assembly of claim 5, wherein the substrate surfaces of the plurality of lift pin sleeves are aligned with the top surface of the dielectric coating.
12. 6. The electrostatic chuck assembly of claim 5, wherein the substrate surfaces of the plurality of lift pin sleeves are spaced apart from the top surface of the dielectric coating.
13. 6. The electrostatic chuck assembly of claim 5, wherein the pin holes of the plurality of lift pin sleeves have diameters configured with a pin tolerance.
14. The electrostatic chuck assembly of claim 5 , wherein the electrostatic chuck is configured to be a monopolar chuck.
15. 1. A method of manufacturing a body of an electrostatic chuck assembly, comprising: the substrate surface, and Base surface forming a body comprising: forming a plurality of lift pin holes through the substrate surface of the body to the base surface of the body; chamfering the plurality of lift pin holes in the substrate surface of the body; coating the body with a dielectric coating; forming a pattern in the dielectric coating disposed on the substrate surface; polishing the dielectric coating disposed on the substrate surface; A method comprising:
16. 16. The method of claim 15, wherein coating the body comprises coating the substrate surface and chamfer portions of the plurality of lift pin holes while substantially preventing a coating from being disposed on surfaces of the lift pin holes and the base surface.
17. forming a plurality of nut recesses in the base surface of the body; 16. The method of claim 15, further comprising:
18. The method of claim 15 , wherein the plurality of lift pin holes are configured to mate with a plurality of lift pin sleeves.
19. Threading the plurality of lift pin holes.
20. The method of claim 18, further comprising:
20. forming a plurality of nut recesses in the base surface of the body; further comprising the plurality of lift pin holes are configured to mate with a plurality of lift pin sleeves; the plurality of nut recesses are configured to receive a plurality of sleeve nuts; The method of claim 15 , wherein the plurality of lift pin holes are configured to allow the plurality of sleeve nuts to secure the plurality of lift pin sleeves.