Multi-cathode PVD system for high aspect ratio barrier seed deposition

Abstract

Described herein are apparatus and methods for multi-cathode barrier seed deposition for high aspect ratio features in physical vapor deposition (PVD) processes. In some embodiments, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber. The pedestal rotates with a workpiece thereon. The PVD chamber includes a lid assembly including a first target and a second target of the same target material, wherein a first surface of the first target defines a first zone of the processing region at a first distance from a top surface of the pedestal, and a second surface of the second target defines a second zone of the processing region at a second distance from a plane of the top surface of the pedestal. A system controller is configured to simultaneously control a first voltage bias for the first target and a second voltage bias for the second target.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE Embodiments of the present disclosure relate generally to forming physical vapor deposition (PVD) films on workpieces in electronic device manufacturing processes, and more particularly to an apparatus and method for improving film deposition uniformity in high aspect ratio PVD. [Background technology]

[0002] Today's electronic device manufacturing processes often involve the use of physical vapor deposition (PVD) or sputtering processes within a dedicated PVD chamber. The source of sputtered material may include a planar or rotating sputtering target formed from a pure metal, alloy, or ceramic material. A magnet array is used to generate a magnetic field near the target, typically located in an assembly often called a magnetron. A high voltage is applied to the target during processing to generate plasma and enable the sputtering process. A voltage source applies a negative bias to the target, which is sometimes referred to as a "cathode." This high voltage generates an electric field inside the PVD chamber, which is used to enable sputtering of the target material and to generate and eject electrons from the target, which are used to generate and sustain plasma near the underside of the target. The magnet array creates a magnetic field that captures the electrons and confines a significant portion of the plasma near the target. The captured electrons then collide with gas atoms located within the processing region of the PVD chamber, potentially ionizing them. Collisions between the trapped electrons and gas atoms cause the gas atoms to release electrons, which are used to maintain and further increase plasma density in the processing region of the PVD chamber. The plasma may contain argon atoms, positively charged argon ions, free electrons, and ionized and neutral metal atoms sputtered from the target. The negative bias accelerates the argon ions toward the target, where they collide with the target's surface, thereby ejecting atoms of the target material from the target. The ejected atoms then travel toward the workpiece and chamber shield to be incorporated into the thin film being grown thereon.

[0003] Controlling PVD sputtering and film deposition uniformity is particularly challenging when processing workpieces with high-aspect-ratio features. For example, high-aspect-ratio vias, such as those used for heterogeneous integration, may be formed on silicon or other semiconductor substrates, or on silicon, glass, or organic interposers. The high-density vias in the interposer can enable vertical connections between chip-level interconnects and package-level interconnects. The vias are typically seeded with a layer of metal (e.g., copper) by PVD sputtering and then electroplated to fill the vias. Filling high-aspect-ratio vias by electroplating requires uniform deposition of a seed layer across the entire via to maintain an electrical path.

[0004] PVD sputtering can provide high step coverage, good uniformity over large areas, and high throughput compared to other deposition techniques. However, due to the line-of-sight nature of the PVD process, seed layers deposited within high-aspect-ratio vias can exhibit poor step coverage and uniformity across the workpiece. In some cases, PVD sputtering may need to be run for longer periods of time to obtain sufficient coverage of the via sidewalls and bottom for successful electroplating. While PVD sputtering from a single source (e.g., cathode) can sometimes be cost-effective from a hardware perspective, it can only provide a single sputtering profile, a fixed throw distance, a fixed deposition angle set by the orientation of the target face relative to the substrate surface, and a single ion energy distribution at any instant during processing.

[0005] Therefore, there is a need in the art for an apparatus and method for improving film deposition uniformity and feature wall coverage of high aspect ratio features in a PVS sputtering system. Summary of the Invention

[0006] FIELD OF THE INVENTION The embodiments described herein generally relate to forming physical vapor deposition (PVD) films on workpieces in electronic device manufacturing processes. More particularly, the embodiments described herein provide apparatus and methods for improving film deposition uniformity and coverage of high aspect ratio features.

[0007] In one embodiment, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber. The pedestal has an upper surface configured to support a workpiece thereon. The PVD chamber includes a first motor coupled to the pedestal, the first motor configured to rotate the pedestal about a first axis perpendicular to at least a portion of the upper surface of the pedestal. The PVD chamber includes a lid assembly including a first target and a second target. A first surface of the first target defines a first zone of the processing region, and the center of the first surface is a first distance from the plane of the upper surface of the pedestal. A second surface of the second target defines a second zone of the processing region, and the center of the second surface is a second distance from the plane of the upper surface of the pedestal. The PVD chamber includes a system controller configured to simultaneously control a first voltage bias for the first target and a second voltage bias for the second target.

[0008] In one embodiment, a PVD chamber includes a pedestal disposed within a processing region of the PVD chamber. The pedestal has an upper surface configured to support a workpiece thereon. The PVD chamber includes a first motor coupled to the pedestal, the first motor configured to rotate the pedestal about a first axis perpendicular to at least a portion of the upper surface of the pedestal. The PVD chamber includes a lid assembly including a first target and a second target. A first surface of the first target defines a first zone of the processing region, and the center of the first surface is a first distance from the plane of the upper surface of the pedestal. A second surface of the second target defines a second zone of the processing region, and the center of the second surface is a second distance from the plane of the upper surface of the pedestal. The PVD chamber includes a computer-readable medium having instructions stored thereon. The instructions, when executed by a processor of a system including a PVD chamber, cause the system to simultaneously control a first voltage bias on a first target and a second voltage bias on a second target.

[0009] Embodiments of the present disclosure further include a method for performing PVD. The method includes rotating a workpiece disposed on an upper surface of a pedestal configured to support the workpiece thereon, the pedestal being disposed within a processing region of a PVD chamber. The method also includes sputtering material from a first target onto the rotating workpiece within a first zone of the processing region and sputtering material from a second target onto the rotating workpiece within a second zone of the processing region. The method also includes simultaneously controlling a first voltage bias on the first target while sputtering material from the first target and a second voltage bias on the second target while sputtering material from the second target. The center of a first surface of the first target is a first distance from a plane of the top surface, and the center of a second surface of the second target is a second distance from a plane of the top surface.

[0010] A more particular description of the present disclosure briefly outlined above may be had by reference to embodiments, some of which are illustrated in the accompanying drawings, in a manner that allows the above-listed features of the disclosure to be understood in detail. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting in scope, as the present disclosure may embrace other embodiments that are equally effective. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a schematic top view of an exemplary workpiece processing system, in accordance with certain embodiments. [Figure 2A] 2 is a cross-sectional side view of a PVD chamber that may be used in the workpiece processing system of FIG. 1, according to certain embodiments. [Figure 2B] 2B is an enlarged cross-sectional view of a portion of the PVD chamber of FIG. 2A in accordance with certain embodiments. [Figure 2C] 2B is an enlarged view of a portion of the PVD chamber of FIG. 2A in accordance with certain embodiments. [Figure 2D] FIG. 2B is an enlarged view of a portion of the PVD chamber of FIG. 2A, in accordance with certain embodiments. [Figure 3] 3A-3C are cross-sectional views of sputter profiles for features of a workpiece including high aspect ratio features, according to certain embodiments. [Figure 4] FIG. 2 is a top view illustrating magnetron and target overlay according to certain embodiments. [Figure 5] 1 illustrates a method of processing a workpiece using a PVD chamber, according to certain embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0012] For ease of understanding, where possible, identical reference numerals have been used to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without additional description.

[0013] The embodiments of the present disclosure described herein generally relate to physical vapor deposition (PVD) of thin films on workpieces in electronic device manufacturing processes. More particularly, the embodiments described herein provide apparatus and methods for improving film deposition uniformity on or within high-aspect ratio features of a workpiece, such as substrates or interposers commonly used in packaging devices, including integrated circuits. In some embodiments, an apparatus may include two or more targets configured to deposit the same material but with different configurations to achieve different sputtering profiles to provide different deposition film characteristics. In some embodiments, an apparatus may include two or more targets configured to deposit different materials. In one example, a first target may be oriented and positioned a first distance from the workpiece and a first bias may be applied during processing to provide a first distribution of sputtered material from the first target, and a second target may be oriented and positioned a second distance from the workpiece and a second bias may be applied during processing to provide a second distribution of sputtered material from the second target. The first distribution of sputtered material may be controlled to have a relatively narrow profile (e.g., above a cosine distribution), a higher ionization energy, or both, and may provide relatively large step coverage, while the second distribution of sputtered material may be controlled to have a relatively wide profile (e.g., below a cosine distribution), a lower ionization energy, or both, and may provide relatively uniform coverage across the workpiece. Moreover, the use of two or more cathodes (e.g., multiple sputtering sources or targets) using the same target material provides high process flexibility. For example, more parameters may be adjusted and balanced to balance uniformity of coverage, step coverage, deposition throughput, or other properties of the deposited layer.Such parameters may include voltage bias to the target (direct current (DC) bias, pulsed DC bias, or radio frequency (RF) bias), magnetron scan profile, magnetic confinement adapter level and shaping, distance between the target and workpiece which affects the throw distance, and relative angle between the target and workpiece.

[0014] Exemplary Workpiece Handling System FIG. 1 is a schematic top view of an exemplary workpiece processing system 100 (also referred to as a “processing platform”) according to certain embodiments. In certain embodiments, the workpiece processing system 100 is configured, among other things, to process workpieces including high-aspect-ratio features, such as the high-aspect-ratio vias described herein. In one or more embodiments, the workpiece is a substrate, such as a silicon substrate or other semiconductor substrate, or an interposer, such as an organic-material-containing interposer or a glass interposer. The processing system 100 generally includes an equipment front-end module (EFEM) 102 for loading workpieces into the processing system 100, a first load lock chamber 104 coupled to the EFEM 102, a transfer chamber 106 coupled to the first load lock chamber 104, and multiple other chambers coupled to the transfer chamber 106, which will be described in more detail below. The EFEM 102 generally includes one or more robots 105 configured to transfer workpieces from a FOUP 103 to at least one of the first load lock chamber 104 or the second load lock chamber 120. Proceeding counterclockwise from the first load lock chamber 104 along the transfer chamber 106, the processing system 100 includes a first dedicated degassing chamber 108, a first pre-cleaning chamber 110, a first deposition chamber 112, a second pre-cleaning chamber 114, a second deposition chamber 116, a second dedicated degassing chamber 118, and a second load lock chamber 120. In certain embodiments, the transfer chamber 106 and each chamber coupled to the transfer chamber 106 are maintained under vacuum. As used herein, the term "vacuum" can refer to a pressure below 760 Torr, and typically is less than about 10 -5 Torr (i.e., about 10 -3 However, some high vacuum systems are maintained at a pressure of about 10 -7 Torr (i.e., about 10 -5The transfer chamber 106 may operate at pressures below 100 psi (Pa). In certain embodiments, this vacuum is generated using a roughing pump and / or turbomolecular pump coupled to the transfer chamber 106 and each of the one or more process chambers (e.g., process chambers 108-118). However, other types of vacuum pumps are also contemplated.

[0015] In certain embodiments, workpieces are loaded into the processing system 100 through a door (also referred to as an “access port”) of the first load lock chamber 104 and unloaded from the processing system 100 through a door of the second load lock chamber 120. In certain embodiments, a stack of workpieces is supported in cassettes located within the FOUP, from which the workpieces are transferred by the robot 105 to the first load lock chamber 104. After a vacuum is drawn within the first load lock chamber 104, one workpiece at a time is removed from the first load lock chamber 104 using a robot 107 located within the transfer chamber 106. In certain embodiments, cassettes are located within the first load lock chamber 104 and / or the second load lock chamber 120 to allow multiple workpieces to be stacked and held therein before being received by the robot 107 in the transfer chamber 106 or the robot 105 in the EFEM 102. However, other loading and unloading configurations are also contemplated.

[0016] Pre-cleaning a workpiece is important to remove impurities from the workpiece surface so that a film (e.g., a metal film) deposited in a deposition chamber is not electrically insulated from the conductive metal surface area of ​​the workpiece by a layer of impurities, such as oxide. By performing pre-cleaning in the first pre-cleaning chamber 110 and the second pre-cleaning chamber 114, which share a similar vacuum environment as the first deposition chamber 112 and the second deposition chamber 116, the workpiece can be transferred from the cleaning chamber to the deposition chamber without exposure to the atmosphere. This prevents impurities from forming on the workpiece during transfer. Additionally, the vacuum in the processing system 100 is maintained while the cleaned workpiece is transferred to the deposition chamber, thereby reducing the number of vacuum pump-down cycles. In some embodiments, the processing system 100 may break the vacuum in one of the load lock chambers when the cassette in the first load lock chamber 104 or the second load lock chamber 120 is empty or full, allowing one or more workpieces to be added or removed from the cassette.

[0017] In certain embodiments, only one workpiece is processed at a time in each precleaning chamber and deposition chamber. Alternatively, multiple workpieces, such as four to six workpieces, may be processed at a time. In such embodiments, multiple workpieces may be placed on a rotatable pallet within each chamber. In certain embodiments, the first precleaning chamber 110 and the second precleaning chamber 114 are inductively coupled plasma (ICP) chambers for etching the workpiece surfaces. However, other types of precleaning chambers are also contemplated. In certain embodiments, one or both of the precleaning chambers are replaced with a film deposition chamber configured to perform a PVD, chemical vapor deposition (CVD), or atomic layer deposition (ALD) process, such as silicon nitride deposition.

[0018] In a precleaning chamber containing an ICP source, an external RF source energizes a coil at the top of the chamber to generate an excitation field within the chamber. A precleaning gas (e.g., argon, helium) from an external gas source flows through the chamber. Precleaning gas atoms within the chamber are ionized (charged) by the supplied RF energy. In some embodiments, the workpiece is biased by an RF bias source. The charged atoms are attracted to the workpiece, resulting in bombardment and / or etching of the workpiece surface. Other gases in addition to argon may be used depending on the desired etch rate and the material being etched.

[0019] In certain embodiments, the first deposition chamber 112 and the second deposition chamber 116 are PVD chambers. In such embodiments, the PVD chambers may be configured to deposit copper, titanium, aluminum, gold, and / or tantalum. However, other types of deposition processes and materials are also contemplated.

[0020] Exemplary PVD Chamber and Method of Use 2A is a cross-sectional side view of a PVD chamber 200 that may be used in the processing system 100 of FIG. 1, according to certain embodiments. The PVD chamber 200 allows for co-sputtering from two or more different targets at the same time. The PVD chamber 200 may utilize two or more different targets formed of the same material for co-sputtering, for example, co-sputtering of high aspect ratio features.

[0021] FIG. 2A is a view formed by the application of section lines applied to the top view of PVD chamber 200 shown in FIG. 2B. For example, PVD chamber 200 may represent either first deposition chamber 112 or second deposition chamber 116 shown in FIG. 1. Alternatively, PVD chamber 200 may represent an additional deposition chamber not shown. FIG. 2B is an enlarged, top cross-sectional view of the upper portion of PVD chamber 200 of FIG. 2A, according to certain embodiments. FIGS. 2C and 2D are enlarged views of a portion of the PVD chamber of FIG. 2A, according to certain embodiments. Accordingly, FIGS. 2A-2D are described together herein for clarity.

[0022] The PVD chamber 200 generally includes a chamber body 202, a lid assembly 204 coupled to the chamber body 202, an optional magnetic confinement adapter 240 coupled to the lid assembly 204, a magnetron 208 coupled to the lid assembly 204, an optional magnetic confinement adapter 340 coupled to the lid assembly 204, a magnetron 308 coupled to the lid assembly 204, a pedestal 210 disposed within the chamber body 202, a target 212 disposed between the magnetron 208 and the pedestal 210, and a target 312 disposed between the magnetron 308 and the pedestal 210. During processing, the interior, or processing region 237, of the PVD chamber 200 is maintained at a vacuum pressure. The processing region 237 is generally defined by the chamber body 202 and the lid assembly 204 such that the processing region 237 is primarily disposed between the target 212, the target 312, and the workpiece support surface 214 of the pedestal 210. A first zone 238 of the processing region 237 is generally defined by a zone of the processing region 237 that is primarily disposed between the target 212 and the workpiece support surface 214 of the pedestal 210. A second zone 239 of the processing region 237 is generally defined by a zone of the processing region 237 that is primarily disposed between the target 312 and the workpiece support surface 214 of the pedestal 210.

[0023] Power supply 206 is electrically connected to target 212 to apply a negatively biased voltage (e.g., a first voltage bias) to target 212. Power supply 207 is electrically connected to target 312 to apply a negatively biased voltage (e.g., a second voltage bias) to target 312. In certain embodiments, power supply 206 is a straight DC mode source or a pulsed DC mode source, and power supply 207 is a straight DC mode source or a pulsed DC mode source. However, other types of power supplies, such as radio frequency (RF) sources, are also contemplated. Power supply 206 and power supply 207 may be independently controlled or controlled together, such as by system controller 250.

[0024] The target 212 includes a target material 212M and a backing plate 218 and is part of the lid assembly 204. The front surface of the target material 212M of the target 212 defines a portion of the processing region 237, specifically at least a portion of the first zone 238. The backing plate 218 is disposed between the magnetron 208 and the target material 212M of the target 212, and in some embodiments, the target material 212M is coupled to the backing plate 218. Typically, the backing plate 218 is an integral part of the target 212; therefore, for simplicity of discussion, the pair may be collectively referred to as the “target.” The backing plate 218 is electrically isolated from the support plate 213 of the lid assembly 204 using a support, which may include the support plate 213, an electrical insulator 215, and a shield 223. Electrical insulator 215 prevents an electrical short circuit from occurring between backing plate 218 and support plate 213 of grounded lid assembly 204. A shield 223 is coupled to support plate 213. Shield 223 prevents material sputtered from target 212 from depositing a film on support plate 213. In some embodiments, shield 223 may include a Faraday shield configured to allow magnetic fields generated by target spacing adapters 240 and 340 to be provided to first zone 238 and second zone 239, respectively.

[0025] Similar to target 212, target 312 includes target material 312M and a backing plate 318 and is part of lid assembly 204. The front surface of target material 312M of target 312 defines a portion of processing region 237, specifically a portion of second zone 239.

[0026] 2A, the backing plate 218 has a plurality of cooling channels 233 configured to receive a coolant (e.g., DI water) therethrough to cool or control the temperature of the target 212. In certain embodiments, the backing plate 218 may have one or more cooling channels. In some examples, the multiple cooling channels 233 may be interconnected and / or may form a serpentine path through the body of the backing plate 218. Similarly, the backing plate 318 may have multiple cooling channels, or one or more cooling channels.

[0027] In some embodiments, the magnetron 208 and the target 212, including the target material 212M and the backing plate 218, each have a triangular or delta shape such that the lateral edges of the target 212 include three corners (e.g., the three rounded corners shown in FIGS. 2B-2C). As shown in FIG. 2B, the target 212 is oriented such that the tip of one corner of the triangular or delta-shaped target is at or adjacent to the central axis 291. When viewed in a planar orientation, as shown in FIG. 2B, the surface area of ​​the target 212 is smaller than the surface area of ​​the workpiece 216. In some embodiments, the surface area of ​​the top surface of the pedestal is larger than the surface area of ​​the front surface of the target 212. In some embodiments, the ratio of the surface area of ​​the front surface of the target 212 to the surface area of ​​the deposition surface of the workpiece 216 (e.g., the top surface of the workpiece) is between about 0.1 and about 0.4.

[0028] Similarly, magnetron 308 and target 312 each have a triangular or delta shape. In one or more embodiments, magnetron 208 may have the same dimensions, shape, or both as magnetron 308, and target 212 may have the same dimensions, shape, or both as target 312. In one or more embodiments, magnetron 208 and magnetron 308 may have different dimensions, shapes, or both. Target 212 may have different dimensions, shapes, or both from target 312.

[0029] As shown in FIG. 2A , magnetron 208 and magnetron 308 are positioned above portions of target 212 and target 312, respectively, within the atmospherically-maintained region of lid assembly 204. Magnetron 208 includes magnet plate 209 (or yoke) and multiple permanent magnets (not shown) attached to a shunt plate. Similarly, magnetron 308 includes magnet plate 309 (or yoke) and multiple permanent magnets (not shown) attached to a shunt plate. Magnet plate 209 and magnet plate 309 have a three-cornered triangular or delta shape. The magnets in magnet plate 209 and magnet plate 309 are permanent magnets arranged as one or more closed loops. Each of the one or more closed loops includes magnets positioned and oriented with respect to their magnetic poles (i.e., north (N) and south (S) poles) so that a magnetic field extends from one loop to the next or between different portions of the loop. The size, shape, field strength, and distribution of the individual magnets are generally selected to, when used in combination with the oscillation of magnetron 208 and magnetron 308, form a desired erosion pattern across the surface of target 212 and target 312. In certain embodiments, magnetron 208, magnetron 308, or both, may include multiple electromagnets instead of permanent magnets.

[0030] The pedestal 210 has an upper surface 214 that supports a workpiece 216. A clamp 224 is used to hold the workpiece 216 to the upper surface 214. In certain embodiments, the clamp 224 is mechanically operated. For example, the weight of the clamp 224 may hold the workpiece 216 in place. In certain embodiments, the clamp 224 is elevated by a pin that is movable relative to the pedestal 210 so as to contact the underside of the clamp 224.

[0031] In this example, the backside of the workpiece 216 is in contact with the top surface 214 of the pedestal 210. In some examples, the entire backside of the workpiece 216 may be in electrical and thermal contact with the top surface 214 of the pedestal 210. A temperature control system 232 may be used to control the temperature of the workpiece 216. In certain embodiments, the temperature control system 232 includes an external cooling source that supplies coolant to the pedestal 210. In some embodiments, the external cooling source is configured to supply a cryogenically cooled fluid (e.g., Galden®) to heat exchange elements (e.g., coolant channels) in the workpiece support portion of the pedestal 210 adjacent the top surface 214 to control the temperature of the workpiece to a temperature below 20° C., e.g., below 0° C., e.g., about −20° C. or below. In certain embodiments, the temperature control system 232 includes a heat exchanger and / or a backside gas flow within the pedestal 210. In some examples, a cooling source may be replaced or augmented by a heating source to increase the workpiece temperature independently of the heat generated during the sputtering process. Controlling the temperature of the workpiece 216 during the sputtering process is important to obtain predictable and reliable thin films. In certain embodiments, an RF bias source 234 is electrically coupled to the pedestal 210 to bias the workpiece 216 during the sputtering process. Alternatively, the pedestal 210 may be grounded, floating, or biased solely with a DC voltage source. Biasing the workpiece 216 may improve film density, adhesion, and material reactivity on the workpiece surface.

[0032] A pedestal shaft 221 is coupled to the underside of the pedestal 210. A rotary union 219 is coupled to the lower end of the pedestal shaft 221 to provide a rotary fluid coupling to a temperature control system 232 and a rotary electrical coupling to an RF bias source 234. In certain embodiments, copper tubing is disposed through the pedestal shaft 221 to couple both fluids and electricity to the pedestal 210. The rotary union 219 includes a magnetic fluid rotary sealing mechanism (also referred to as a "Ferrofluidic® seal") for the vacuum rotary feedthrough.

[0033] In one example, workpiece 216 is a square or rectangular panel. In certain embodiments, top surface 214 of pedestal 210 accommodates a single square or rectangular panel workpiece having sides of about 500 mm or greater, such as 510 mm x 515 mm or 600 mm x 600 mm. However, the apparatus and methods of the present disclosure may be practiced with many different types and sizes of workpieces.

[0034] In certain embodiments, the pedestal 210 is rotatable about a central axis 291 that is perpendicular to at least a portion of the top surface 214 of the pedestal 210. In this example, the pedestal 210 is rotatable about a vertical axis corresponding to the z-axis. In certain embodiments, the rotation of the pedestal 210 is continuous without indexing. In other words, the motor 231 that drives the rotation of the pedestal 210 does not have programmable stops for rotating the workpiece 216 to a fixed rotational position. Instead, the pedestal 210 rotates continuously relative to the target 212 to improve film deposition uniformity. In certain embodiments, the motor 231 is an electric servo motor. The motor 231 may be raised and lowered by a separate motor 215, which may be an electrically driven linear actuator. A bellows 217 surrounds the pedestal shaft and forms a seal between the chamber body 202 and the motor 231 during raising and lowering of the pedestal 210.

[0035] The lower surface of target 212, defined by the surface of target material 212M, faces toward the upper surface 214 of pedestal 210 and the front surface of workpiece 216. The lower surface of target 312, defined by the surface of target material 312M, faces toward the upper surface 214 of pedestal 210 and the front surface of workpiece 216. The lower surface of target 212 faces away from backing plate 218, which faces toward the atmospheric or external region of the PVD chamber. Similarly, the lower surface of target 312 faces away from backing plate 318, which faces toward the atmospheric or external region of the PVD chamber. In certain embodiments, target material 212M of target 212 and target material 312M of target 312 are formed from metal for sputtering a corresponding film composition onto workpiece 216. In one example, target material 212M and target material 312M may include pure materials or alloys containing elements selected from the group consisting of copper (Cu), molybdenum (Mo), nickel (Ni), titanium (Ti), tantalum (Ta), aluminum (Al), cobalt (Co), gold (Au), silver (Ag), manganese (Mn), and silicon (Si). Materials deposited on workpiece 216 by the methods described herein may include pure metals, doped metals, metal alloys, metal nitrides, metal oxides, metal carbides, and silicon-containing oxides, nitrides, or carbides containing these elements.

[0036] In the illustrated embodiment, a plane parallel to the underside of the target 212 is tilted relative to the top surface of the support plate 213 by a first angle, as shown in FIG. 2A . In other words, the plane of the target 212 is tilted relative to the plane of the top surface 214 of the pedestal 210, and thus relative to the front surface of the workpiece 216. Because the respective bodies of the pedestal 210 and the target 212 are generally planar, the target 212 may be said to be tilted relative to the pedestal 210, and vice versa. In certain embodiments, this angle is between about 2° and about 10°, e.g., between about 3° and about 5°. As shown in FIG. 2A , this angle is about 4°. As shown in FIG. 2A , the target 212 is tilted downward in a direction from the radially inner edge 212C of the target 212 to the radially outer edge 212A of the target 212. The radially inner edge 212C is farther (e.g., vertically) from the top surface 214 of the pedestal 210 than the radially outer edge 212A. In one example, the target 212 includes an edge with three corners, and due to the formed tilt angle, one of the three corners coinciding with the radially inner edge 212C is positioned farther from the top surface of the pedestal 210 than each of the other two corners. It is believed that tilt angles greater than the ranges described herein may have target-to-workpiece spacing that varies too much from the radially inner edge 212C to the radially outer edge 212A, resulting in undesirable variations in film deposition uniformity and / or quality. In one example, undesirable variations in film quality include undesirable variations in film roughness or grain size or workpiece center-to-edge uniformity. In another example, undesirable variations in film quality may include an undesirable ratio between the amount of sputtered material provided to the surface of the workpiece and the amount of sputtered material provided to a shield surrounding the workpiece during a PVD process. Tilt angles smaller than the ranges described herein can cause undesirable film non-uniformity. Therefore, the tilt angle windows described herein can achieve improved film deposition results over other conventional designs.The above discussion of target 212 relative to the plane of top surface 214 of pedestal 210, and therefore relative to the front surface of workpiece 216, may also apply to target 312.

[0037] In this example, pedestal 210 is substantially horizontal, or parallel to the xy plane, while target 212 and target 312 are non-horizontal, or tilted relative to the xy plane, although other non-horizontal orientations of pedestal 210 are also contemplated.

[0038] In the illustrated embodiment, a target spacing adapter 240 is coupled to the lid assembly 204. The target spacing adapter 240 is generally cylindrical and encloses a volume including at least a portion of a first zone 238 of the processing region 237, located below the target 212 and the magnetron 208 and above the upper surface 214 of the pedestal 210. A target spacing adapter 340 is also coupled to the lid assembly 204. The target spacing adapter 340 is also generally cylindrical and encloses a volume including at least a portion of a second zone 239 of the processing region 237, located below the target 312 and the magnetron 308 and above the upper surface 214 of the pedestal 210. To cool or control the temperature of the target spacing adapter 240 and the target spacing adapter 340, the target spacing adapter 240 and the target spacing adapter 340 each have a plurality of cooling channels 242 and cooling channels 342 configured to receive a coolant (e.g., DI water) therethrough. In some examples, multiple cooling channels 242 may be interconnected and / or may form a serpentine path through target spacing adapter 240. Similarly, multiple cooling channels 342 may be interconnected and / or may form a serpentine path through target spacing adapter 340.

[0039] 2C and 2D , respectively. Magnetic confinement assembly 241 is generally disposed between target 212 and pedestal 210 and is formed about a first central axis 245 of first zone 238. First central axis 245 penetrates upper surface 214 of target 212 and pedestal 210. Magnetic confinement assembly 341 is generally disposed between target 312 and pedestal 210 and is formed about a second central axis 345 of second zone 239. Second central axis 345 penetrates upper surface 214 of target 312 and pedestal 210. Magnetic confinement assembly 241 and magnetic confinement assembly 341 each include a plurality of permanent magnets 243, 343 or one or more induction coils (not shown) surrounding target spacing adapter 240 and at least a portion of first zone 238, and target spacing adapter 340 and at least a portion of second zone 239, respectively. The plurality of permanent magnets 243, 343 in magnetic confinement assembly 241 and magnetic confinement assembly 341 are each configured to generate static or dynamic magnetic fields within at least first zone 238 and second zone 239. These magnetic fields are configured to modify the shape of the plasma and the concentration of plasma-generating ions (e.g., gas and sputter material) to control the density profile of the plasma and ionized sputter atoms within process volume 237. In one example, magnetic confinement assembly 241 and magnetic confinement assembly 341 are configured to separately adjust the radial distribution of the generated plasma and ionized sputter atoms over the surface of the workpiece. In one embodiment, magnetic confinement assembly 241 and magnetic confinement assembly 341 each include a rotating magnetic holder 245 and 345 configured to rotate about a central axis of first process zone 238 and second process zone 239, respectively.In one or more embodiments, the rotating magnetic holder 245, including the motor for the rotating magnetic holder 245, is closer to the central axis 291 of the chamber 204 than shown for FIG. 2A.

[0040] In some embodiments, the plurality of permanent magnets 243, 343 or one or more induction coils are aligned and / or oriented with respect to a plane parallel to the surface of the target 212, 312 (e.g., the bottom surface of the target material 212M, 312M) so that the generated fields are properly aligned to enable uniform deposition on the substrate. In this case, the central axes of each of the plurality of permanent magnets 243, 343 or one or more induction coils are aligned in such a manner that they are disposed at an angle with respect to the vertical direction (i.e., the Z direction).

[0041] A system controller 250, such as a programmable computer, is coupled to the PVD chamber 200 to control the PVD chamber 200 or components of the PVD chamber 200. For example, the system controller 250 may control the operation of the PVD chamber 200 using direct control of the power supply 206, the magnetron 208, the magnetron 308, the target spacing adapter 240, the cooling of the target spacing adapter 240, the target spacing adapter 340, the cooling of the target spacing adapter 340, the pedestal 210, the cooling of the backing plate 218, the first actuator 220, the second actuator 222, the temperature control system 232, and / or the RF bias source 234, or indirect control of other controllers associated therewith. During operation, the system controller 250 enables data acquisition and feedback from each component to regulate processing within the PVD chamber 200.

[0042] The system controller 250 includes a programmable central processing unit (CPU) 252 operable with memory 254 (e.g., non-volatile memory) and support circuits 256. The support circuits 256 (e.g., cache, clock circuits, input / output subsystems, power supplies, etc., and combinations thereof) are conventionally coupled to the CPU 252 and to the various components of the PVD chamber 200.

[0043] In some embodiments, CPU 252 is one of any form of general-purpose computer processor, such as a programmable logic controller (PLC), used in industrial environments to control various monitoring system components and sub-processors. Memory 254 coupled to CPU 252 is non-transitory and is typically one or more of readily available memory, such as local or remote random access memory (RAM), read-only memory (ROM), floppy disk drive, hard disk, or any other form of digital storage.

[0044] As used herein, memory 254 takes the form of a computer-readable storage medium (e.g., non-volatile memory) containing instructions that, when executed by CPU 252, facilitate operation of PVD chamber 200. The instructions in memory 254 take the form of a program product (e.g., a middleware application, an instrument software application, etc.), such as a program that implements the methods of the present disclosure. The program code may conform to any one of several different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The programs in the program product define functions of embodiments (including the methods described herein).

[0045] Exemplary computer-readable storage media include, but are not limited to, (i) non-writable storage media having information permanently stored thereon (e.g., a read-only memory device within a computer, such as a CD-ROM disk readable by a CD-ROM drive, a flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory), and (ii) writable storage media having changeable information stored thereon (e.g., a floppy disk or hard disk drive within a diskette drive, or any type of solid-state random access semiconductor memory). Such computer-readable storage media, when containing computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure.

[0046] During operation, the PVD chamber 200 is evacuated, refilled with argon gas, and maintained at vacuum pressure by a vacuum pump (not shown). The power supply 206 applies a negative bias voltage to the target 212, generating an electric field inside the chamber body 202. This electric field acts to attract gas ions, which generate electrons through collisions with the exposed surface of the target 212. These electrons create and sustain a high-density plasma near the underside of the target 212, which ballistically ejects target material 212M from the target's surface. The plasma is concentrated near the surface of the target material 212M due to the magnetic field generated by the magnetron 208. This magnetic field creates a closed-loop annular path that acts as an electron trap, reshaping the trajectories of secondary electrons emitted from the target material 212M into a cycloidal path, significantly increasing the ionization probability of the sputtering gas within the confinement zone. The plasma confined near the underside of the target 212 contains argon atoms, positively charged argon ions, free electrons, and neutral atoms (i.e., non-ionized atoms) sputtered from the target material 212M. The argon ions in the plasma strike the target surface, ejecting atoms of the target material, which are accelerated toward the workpiece 216, depositing a thin film on the workpiece surface. As described above, the magnetic confinement assembly 241, 341 is used to generate a static magnetic field, a dynamic magnetic field, or both.

[0047] Similarly, the power supply 307 applies a negative bias voltage to the target 312, generating an electric field inside the chamber body 202. This electric field acts to attract gas ions, which generate electrons through collisions with the exposed surface of the target 312. These electrons enable the generation and maintenance of a high-density plasma near the underside of the target 212, which ballistically ejects target material 312M from the target surface. The plasma is concentrated near the surface of the target material 312M due to the magnetic field generated by the magnetron 308. This magnetic field forms a closed-loop annular path that acts as an electron trap, reshaping the trajectories of secondary electrons ejected from the target material 312M into a cycloidal path, significantly increasing the ionization probability of the sputtering gas within the confinement zone. The plasma confined near the underside of the target 312 contains argon atoms, positively charged argon ions, free electrons, and neutral atoms (i.e., non-ionized atoms) sputtered from the target material 312M. Argon ions in the plasma strike the target surface, releasing atoms of the target material that are accelerated toward workpiece 216, depositing a thin film on the workpiece surface. Similar to magnetic confinement assembly 241, magnetic confinement assembly 341 is used to generate a static magnetic field, a dynamic magnetic field, or both.

[0048] In operation, the system controller 250 can control the magnetron 208, the magnetic confinement adapter 240, or both, according to a first sputtering profile to affect characteristics of the plasma associated with the target 212. The system controller 250 can also control the magnetron 308, the magnetic confinement adapter 340, or both, according to a second sputtering profile to affect characteristics of the plasma associated with the target 312. Controlling the plasma associated with the target can enable tuning of the uniformity and characteristics of the deposited film on the workpiece. The system controller 250 can control the deposition angle, deposition rate, and profile of the distribution of sputtered material ejected from the target 212 separately from the deposition angle, deposition rate, material, and profile of the distribution of sputtered material ejected from the target 312.

[0049] Inert gases such as argon are commonly used as sputtering gases because they tend not to react with the target material or combine with the process gases, and because their relatively high molecular weight results in higher sputtering and deposition rates.

[0050] 2B is a top view illustrating the overlay of targets 212 and 312 and workpiece 216 relative to chamber body 202 of FIG. 2A , according to certain embodiments. In certain embodiments, radially outer edge 212A of target 212, and similarly, radially outer edge 312A of target 312, extend beyond the corner of workpiece 216 by a distance of about 1 inch to about 3 inches, e.g., about 1.5 inches. In certain embodiments, radially inner edge 212C of target 212 is spaced apart from central axis 291 by a distance of about 0.25 inch to about 0.75 inch, e.g., about 0.5 inch, which may coincide with the linear center of chamber body 202. Similarly, radially inner edge 312C of target 312 is spaced apart from central axis 291 by a distance of about 0.25 inch to about 0.75 inch, e.g., about 0.5 inch.

[0051] As shown in FIG. 2B , one or more of the target 212, target material 212M, and backing plate 218 each have a triangular or delta-shaped configuration with three rounded corners, one of which is located near or substantially adjacent to the central axis 291, and the magnetron 208 has a circular shape. In one or more embodiments, the magnetron has a triangular or delta-shaped configuration similar to but smaller than the target 212 and backing plate 218, as shown, for example, with respect to FIG. 4 below. The target 212 and magnetron 208 are shaped and oriented in a manner that allows the magnetron 208 to translate over substantially the entire active area of ​​the target 212, such as the target material 212M portion of the target 212. As described in more detail below, in some embodiments, the target 212 and magnetron 208 have substantially the same shape. Similarly, as shown in FIG. 2B , one or more of the target 312, target material 312M, and backing plate 318 each have a triangular or delta shape with three rounded corners, one of which is located near or substantially adjacent to the central axis 291, and the magnetron 308 has a circular shape. In one or more embodiments, the magnetron 308 has a triangular or delta shape similar to the magnetron 408 shown with respect to FIG. 4 . The target 312 and magnetron 308 are shaped and oriented in a manner that allows the magnetron 308 to be translated over substantially the entire active area of ​​the target 312, such as the target material 312M portion of the target 312. As will be described in more detail below, in some embodiments, the target 312 and magnetron 308 have substantially the same shape.

[0052] Exemplary Sputtering Profiles and Methods of Use 3 shows a schematic cross-sectional view 300 of a sputter profile produced by a first cathode 304 and a second cathode 306 for a feature formed on a workpiece 216, including a high aspect ratio feature. The cross-sectional view 300 includes a representative feature 302 of the workpiece, a distribution 330 of sputtered material, and the first cathode 304 and the second cathode 306. In one or more embodiments, the feature 302 may be an exemplary feature of the workpiece 216 disposed on the upper surface 214 of the pedestal 210.

[0053] In one or more embodiments, the first cathode 304 may be or include at least the target 212, and the second cathode 306 may be or include at least the target 312. In one or more embodiments, the target material 212M of the first cathode 304 and the target material 312M of the second cathode 306 are made of the same material. In some embodiments, the target material 212M may be made of a different material than the target material 312M. In some embodiments, the target material is copper (Cu). In one or more embodiments, this same material may be a pure material or an alloy containing an element selected from the group consisting of copper (Cu), molybdenum (Mo), nickel (Ni), titanium (Ti), tantalum (Ta), aluminum (Al), cobalt (Co), gold (Au), silver (Ag), manganese (Mn), and silicon (Si).

[0054] As described further herein, the first cathode 304 is positioned closer to the top surface 214 of the pedestal 210 (at a shorter distance from the top surface 214 of the pedestal 210) and therefore closer to the workpiece than the second cathode 306, as indicated by the distances 304A and 306A measured from the center or center of gravity of the respective cathodes.

[0055] In one or more embodiments, features 302 are formed on a substrate, such as a glass substrate or a semiconductor substrate. In some embodiments, features 302 may be features of another type of workpiece, such as an interposer (e.g., a glass interposer or an organic interposer). Features 302 include features closer to a first edge of workpiece 216 (including feature 324), features closer to a center of workpiece 216 (including feature 326), and features closer to a second edge of workpiece 216 (including feature 328). As the workpiece 216 is rotated about a central axis (e.g., centerline CL in FIG. 3 ), the positions of the features 302 relative to the first cathode 304 and second cathode 306 change over time. For example, at one instant (as shown in FIG. 3 ), some features (including feature 324) are closer to the edge of the workpiece 216, which is closer to the first cathode 304, and some features (including feature 326) are closer to the center of the workpiece 216, which is generally between the first cathode 304 and the second cathode 306. Some features (including feature 328) are closer to the edge of the workpiece 216, which is closer to the second cathode 306. At another moment (not shown), features (including feature 324) that were closer to the first cathode 304 at the first moment are now closer to the second cathode 306, features that were closer to the center of the workpiece 216 are still near the center, and features (including feature 328) that were closer to the second cathode 306 at the first moment are now closer to the first cathode 304.

[0056] In one or more embodiments, feature 302 may be a high aspect ratio feature. High aspect ratio features include features whose depth is greater than their width, particularly features whose depth is greater than their width by a ratio of at least 2:1. In some embodiments, the depth is greater than the width by at least 5:1, and may be as high as 10:1. In one or more embodiments, feature 302 may have a depth-to-width ratio greater than 10:1. In one or more embodiments, the high aspect ratio feature comprises a via.

[0057] During operation of a PVD chamber (e.g., PVD chamber 200) including first cathode 304 and second cathode 306, feature 302 can be simultaneously exposed to two different distributions 330 of sputtered material from first cathode 304 and second cathode 306. Feature 324 is simultaneously exposed to a distribution of sputtered material 332 from first cathode 304 and a distribution of sputtered material 334 from second cathode 306 to form seed layer 320 of feature 324. Similarly, feature 326 is simultaneously exposed to a distribution of sputtered material 332 from the first cathode 304 and a distribution of sputtered material 334 from the second cathode 306 to form a seed layer 320 of feature 326, and feature 328 is simultaneously exposed to a distribution of sputtered material 332 from the first cathode 304 and a distribution of sputtered material 334 from the second cathode 306 to form a seed layer 320 of feature 326.

[0058] In some embodiments, the first cathode 304 and the second cathode 306 have different sputtering profiles. In one or more embodiments, the sputtering profiles associated with the first cathode 304 and the second cathode 306 depend on the throw distance, the first deposition angle of the target relative to the workpiece, the chamber pressure, the magnetic field generated by magnetrons positioned adjacent to the cathodes 304 and 306, and the DC or RF power supplied to each of the cathodes 304 and 306. The sputtering profile can also be adjusted by the magnetic field generated by the magnetic confinement assembly. Thus, the first cathode 304 may be associated with a first throw distance, a first deposition angle, and a first DC or RF power applied thereto, and the second cathode 306 may be associated with a second throw distance, a second deposition angle, and a second DC or RF power applied thereto. As discussed herein, the first cathode 304 is a different distance from the workpiece including the feature 302 than the second cathode 306, which provides different throw distances (e.g., distances 304A and 306A). The first cathode 304 and the second cathode 306 can be tilted at different angles relative to the workpiece (e.g., a substrate, an interposer, or other workpiece), and they can have different deposition angles. Furthermore, one or more of the magnetron 208, the magnetic confinement adapter 240, or the angle of the first cathode 304 may be controlled (e.g., by the system controller 250) to control or otherwise affect the first sputtering profile, and one or more of the magnetron 308, the magnetic confinement adapter 340, or the angle of the second cathode 306 may be controlled (e.g., by the system controller 250) to control or otherwise affect the second sputtering profile.The first ion energy distribution may be controlled or otherwise affected by controlling (e.g., using system controller 250) one or more of the bias of magnetron 208, magnetic confinement adapter 240, or power supply 206. The second ion energy distribution may be controlled or otherwise affected by controlling (e.g., using system controller 250) one or more of the bias of magnetron 308, magnetic confinement adapter 340, or power supply 207.

[0059] The distribution of sputtered material 332 and the distribution of sputtered material 334 may impact the feature 324 at different angles due to differences in throw distance, attributes of the magnetrons 208, 308, and different ion or neutral energies of the sputtered material due, at least in part, to the power applied to the cathodes 304 and 306. In one or more embodiments, the distribution of sputtered material 334 associated with the second cathode 306 may have (e.g., may be controlled to have) a relatively narrower profile than the distribution of sputtered material 332 associated with the first cathode 304. The narrower profile is associated with a relatively higher applied power, delivering a relatively greater amount of sputtered material deeper within the feature 324. Conversely, the distribution of sputtered material 332 has a relatively wider profile than the distribution of sputtered material 334, is associated with a relatively lower applied power, delivers a relatively larger amount of sputtered material across the workpiece (e.g., has greater uniformity compared to the narrower profile associated with the distribution of sputtered material 334), and provides relatively higher step coverage (e.g., compared to the distribution of sputtered material 334).

[0060] Similarly, the distribution of sputtered material 332 and the distribution of sputtered material 334 may impinge on feature 326 at different angles, from different throw distances, and with different applied bias powers. Also, the distribution of sputtered material 332 and the distribution of sputtered material 334 may impinge on feature 328 at different angles, from different throw distances, and with different ion energies.

[0061] In one or more embodiments, one or more of magnetron 208 (first magnetron) or magnetron 308 (second magnetron) may be controlled simultaneously (e.g., by system controller 250) during sputtering of target material 212M from target 212 and during sputtering of target material 312M from target 312, respectively. Magnetron 208 may be controlled according to a first scan pattern, and magnetron 308 may be controlled according to a second scan pattern. In one or more embodiments, the scan pattern of magnetron 208 may include x-axis and y-axis translation over target 212 during sputtering to provide controlled erosion of target 212, and the scan pattern of magnetron 308 may include x-axis and y-axis translation over target 312 during sputtering to provide controlled erosion of target 312. In one or more embodiments, the scanning pattern of magnetron 208 may include circumferential and radial translation over target 212 during sputtering to provide controlled erosion of target 212, and the scanning pattern of magnetron 308 may include circumferential and radial translation over target 312 during sputtering to provide controlled erosion of target 312.

[0062] Voids 322 may remain after the operation of the PVD chamber to deposit seed layer 320 on workpiece feature 302. Voids 322 may be later filled. In one or more embodiments, voids 322 may be filled with the same material as seed layer 320, for example, using an electroplating process.

[0063] As shown in FIG. 4 , in one or more embodiments, the target 212, target material 212M, and backing plate 218 each have a triangular or delta shape with three rounded corners, and the magnetron 408 also has a triangular or delta shape with three rounded corners, with one of the three rounded corners located near or substantially adjacent to the central axis. For example, to allow the magnetron 408 to translate over the target 212 in the x-axis and y-axis directions as described above, the radius R1 of the magnetron 408 is smaller than the corresponding radius R2 of the target 212. In one or more embodiments, the magnetron 408 may instead translate radially. As shown in FIG. 4 , the radially outer edge 408A of the magnetron 408 has a radius of curvature that is smaller than or equal to the corresponding radially outer edge 212A of the target 212. In some embodiments, these radii of curvature differ by no more than about 40%, e.g., no more than about 20%. The arc length of the radially outer edge 408A of the magnetron 408 is shorter than the corresponding arc length of the radially outer edge 212A of the target 212. In one or more embodiments, the magnetron 408 can translate in the x-axis and y-axis directions over the target 212, for example, as described above. In one or more embodiments, the magnetron 408 can instead translate in the circumferential direction. As shown in FIG. 4 , the respective opposite edges 408B and 408D of the magnetron 408 and the corresponding opposite edges 212B and 212D of the target 212, respectively, are oriented approximately parallel to one another. In some embodiments, the angle between the respective edges 408B and 212B and 408D and 212D is about 5° or less, e.g., in the range of about 0° to about 5°, e.g., about 0° (i.e., parallel to one another). Although not shown, a second magnetron, also having a triangular or delta shape with three rounded corners, may be similarly configured with respect to the target 312.

[0064] As discussed further above, the magnetron 408 may be translated in the x- and y-axes or radially and circumferentially over the target 212 to scan the magnetron 408 along a scan path over the target. As shown in FIG. 4 , a first actuator (not shown) and a second actuator (not shown) may be synchronized to scan the magnetron 408 along a scan path 426. The scan path 426 is shown for illustrative purposes only, and any number of different scan paths may scan the magnetron 408 over the active area of ​​the target 212 consistent with the techniques described herein. Similarly, a first actuator (not shown) and a second actuator (not shown) may be synchronized to scan the magnetron (not shown) along a scan path over the active area of ​​the target 312 consistent with the techniques described herein.

[0065] 5 illustrates a method 500 for processing a workpiece using a PVD chamber, according to certain embodiments. Note that in the following examples, the PVD chamber 200 is described for illustrative purposes only.

[0066] In operation 502, a workpiece is placed on an upper surface of a pedestal configured to support the workpiece thereon, and the workpiece is rotated. The pedestal is located within a processing region of the PVD chamber. In some embodiments, with respect to the PVD chamber 200, the workpiece 216 is placed on an upper surface 214 of a pedestal 210 configured to support the workpiece 216 thereon, and the workpiece 216 is rotated about a central axis (e.g., centerline CL in FIG. 3 ). The pedestal 210 is located within the processing region 237 of the PVD chamber 200. In some embodiments, the pedestal 210 is continuously rotated relative to the target 212 and the target 312 to improve film deposition uniformity.

[0067] In operation 504, material is sputtered onto the rotating workpiece from a first target located in a first zone of the processing region at a first distance from the plane of the top surface, and material is sputtered onto the rotating workpiece from a second target located in a second zone of the processing region at a second distance from the plane of the top surface. In some embodiments, the first target is the same material as the second target. In one or more embodiments, with respect to the PVD chamber 200, material is sputtered onto the rotating workpiece 216 from a target 212 (first target) located in a first zone 238 of the processing region 237 at a first distance from the plane of the top surface 214, and material is sputtered onto the rotating workpiece 216 from a target 312 (second target) located in a second zone 239 of the processing region 237 at a second distance from the plane of the top surface 214, where target 212 is the same material as target 312. In some embodiments, target 212 is a different material than target 312 and is configured to deposit a different material.

[0068] In operation 506, a first voltage bias and a second voltage bias are simultaneously controlled. The first voltage bias is for the first target during sputtering of material from the first target, and the second voltage bias is for the second target during sputtering of material from the second target. In some embodiments, the first voltage bias from power supply 206 and the second voltage bias from power supply 207 are simultaneously controlled by system controller 250 for PVD chamber 200. In one or more embodiments, the first voltage bias is applied by the system controller to target 212, thereby sputtering material from target 212, and the second voltage bias is applied by the system controller to target 312, thereby sputtering material from target 312. In one example, the first voltage bias applied to target 212 is less than the second voltage bias applied to target 312. In another example, the throw distance of target 212 is less than the throw distance of target 312. In another example, the magnetic field generated by magnetic confinement assembly 241 associated with target 212 is stronger than the magnetic field generated by magnetic confinement assembly 341 associated with target 312, or vice versa. In another example, the throw distance of target 212 is shorter than the throw distance of target 312, and the magnetic field generated by magnetic confinement assembly 241 associated with target 212 is weaker than the magnetic field generated by magnetic confinement assembly 341 associated with target 312. Also, in one example, or one of these examples, the angular distribution of sputtered material from target 212 is narrower than the angular distribution of sputtered material from target 312, by at least one of adjusting the bias power applied to target 212 to be greater than the bias power applied to target 312.

[0069] Additionally, in some embodiments of method 500, operations 502, 504, and 506 are performed substantially simultaneously. In some embodiments of method 500, operations 502 and 506 are initiated before operation 504 is initiated. In some embodiments of method 500, operations 502, 504, and 506 are initiated sequentially. In some embodiments of method 500, operations 502, 504, and 506 are initiated out of order.

[0070] While the foregoing is directed to embodiments of the present disclosure, other and additional embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A physical vapor deposition (PVD) chamber comprising: a pedestal disposed within a processing region of the PVD chamber, the pedestal having an upper surface configured to support a workpiece thereon; a first motor coupled to the pedestal, the first motor configured to rotate the pedestal about a first axis perpendicular to at least a portion of the top surface of the pedestal; a lid assembly comprising a first target and a second target; a first surface of the first target defining a first zone of the processing region, the center of the first surface being a first distance from a plane of the top surface of the pedestal; a second surface of the second target defining a second zone of the processing region, the second surface being centered a second distance from the plane of the top surface of the pedestal; a lid assembly; a system controller configured to simultaneously control a first voltage bias to the first target and a second voltage bias to the second target; A physical vapor deposition (PVD) chamber / PVD chamber comprising:

2. the first surface is inclined at a first angle relative to the plane of the top surface of the pedestal; the second surface is inclined at a second angle relative to the plane of the top surface of the pedestal, the second angle being different from the first angle; 10. The PVD chamber of claim 1.

3. the first surface is inclined at a first angle relative to the plane of the top surface of the pedestal; the second surface is inclined at a second angle relative to the plane of the top surface of the pedestal, the second angle being opposite to the first angle; 10. The PVD chamber of claim 1.

4. a first magnetic confinement assembly disposed between the first target and the pedestal, the first magnetic confinement assembly being formed around a first central axis of the first zone, the first central axis passing through the top surfaces of the first target and the pedestal; a second magnetic confinement assembly disposed between the second target and the pedestal, the second magnetic confinement assembly being formed around a second central axis of the second zone, the second central axis passing through the second target and the top surface of the pedestal; and The PVD chamber of claim 1 further comprising:

5. 5. The PVD chamber of claim 4, wherein the system controller is further configured to control a first field generated by the first magnetic confinement assembly according to a first sputtering profile and a second field generated by the second magnetic confinement assembly according to a second sputtering profile.

6. the first magnetic containment assembly comprising a first one or more channels fluidly coupled to a first heat exchanger for controlling a first temperature profile of the first magnetic housing; the second magnetic containment assembly comprises a second channel or channels fluidly coupled to the first heat exchanger or the second heat exchanger for controlling a second temperature profile of the second magnetic housing; or It's both.

5. The PVD chamber of claim 4.

7. a first magnetron positioned within a region of the lid assembly maintained at atmospheric pressure above a portion of the first target; a second magnetron positioned within the atmospheric pressure-maintained region of the lid assembly above a portion of the second target; The PVD chamber of claim 1 further comprising:

8. The PVD chamber of claim 1 , wherein the first target and the second target are configured to simultaneously deposit the same material on different areas of the workpiece.

9. 10. The PVD chamber of claim 1, wherein the top surface of the pedestal is configured to receive a square or rectangular workpiece having sides with lengths of about 500 mm or greater.

10. 1. A physical vapor deposition (PVD) chamber comprising: a pedestal disposed within a processing region of the PVD chamber, the pedestal having an upper surface configured to support a workpiece thereon; a first motor coupled to the pedestal, the first motor configured to rotate the pedestal about a first axis perpendicular to at least a portion of the top surface of the pedestal; a lid assembly comprising a first target and a second target; a first surface of the first target defining a first zone of the processing region, the center of the first surface being a first distance from a plane of the top surface of the pedestal; a second surface of the second target defining a second zone of the processing region, the second surface being centered a second distance from the plane of the top surface of the pedestal; a lid assembly; a computer-readable medium having stored thereon instructions that, when executed by a processor of a system including the PVD chamber, cause the system to simultaneously control a first voltage bias on the first target and a second voltage bias on the second target; and A physical vapor deposition (PVD) chamber comprising:

11. a first magnetic confinement assembly disposed between the first target and the pedestal, the first magnetic confinement assembly being formed around a first central axis of the first zone, the first central axis passing through the top surfaces of the first target and the pedestal; a second magnetic confinement assembly disposed between the second target and the pedestal, the second magnetic confinement assembly being formed around a second central axis of the second zone, the second central axis passing through the second target and the top surface of the pedestal; and The PVD chamber of claim 10 further comprising:

12. 12. The PVD chamber of claim 11, further comprising executable instructions configured to cause the system to control a first field generated by the first magnetic confinement assembly according to a first sputtering profile and a second field generated by the second magnetic confinement assembly according to a second sputtering profile.

13. a first magnetron positioned within a region of the lid assembly maintained at atmospheric pressure above a portion of the first target; a second magnetron positioned within the atmospheric pressure-maintained region of the lid assembly above a portion of the second target; The PVD chamber of claim 10 further comprising:

14. The PVD chamber of claim 10 , wherein the first target and the second target are configured to simultaneously deposit the same material on different areas of the workpiece.

15. 1. A method for performing physical vapor deposition (PVD), comprising: rotating a workpiece disposed on an upper surface of a pedestal configured to support the workpiece thereon, the pedestal being disposed within a processing region of a PVD chamber; sputtering material from a first target onto the rotating workpiece within a first zone of the processing region and sputtering material from a second target onto the rotating workpiece within a second zone of the processing region, the center of a first surface of the first target being a first distance from the plane of the top surface and the center of a second surface of the second target being a second distance from the plane of the top surface; simultaneously controlling a first voltage bias to the first target while sputtering the material from the first target and a second voltage bias to the second target while sputtering the material from the second target; A method comprising:

16. simultaneously controlling a first magnetron in accordance with a first scanning pattern relative to the first target while sputtering the material from the first target, and controlling a second magnetron in accordance with a second scanning pattern relative to the second target while sputtering the material from the second target; 16. The method of claim 15.

17. sputtering the material from the first target onto the workpiece and the material from the second target onto the workpiece includes depositing a seed layer on the workpiece including in vias of the workpiece.

16. The method of claim 15.

18. performing a metal deposition process to form a metal layer on the seed layer and in the via; 20. The method of claim 17, further comprising:

19. controlling a first field generated by a first magnetic confinement assembly formed around the first zone of the processing region according to a first sputtering profile; controlling a second field generated by a second magnetic confinement assembly formed around the second zone of the processing region according to a second sputtering profile; 16. The method of claim 15, further comprising:

20. directing a fluid through a first channel or channels fluidly coupled to a first heat exchanger to control a first temperature profile of the first magnetic housing; or directing a fluid through a second channel or channels fluidly coupled to the first heat exchanger or the second heat exchanger to control a second temperature profile of the second magnetic housing; or Both 20. The method of claim 19, further comprising:

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