Epi insulating plates with gap and angle adjustment for process optimization

Abstract

The present disclosure relates to a substrate processing method and apparatus suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes moving an insulating plate to adjust one or more of a height of the insulating plate or an angle of the insulating plate such that the insulating plate moves in a non-parallel orientation relative to the substrate. The method also includes flowing one or more process gases over the substrate to deposit material on the substrate, including directing the one or more process gases through one or more flow paths defined at least in part by a space between the insulating plate and the substrate.

Description

[Technical Field]

[0001] This disclosure relates to semiconductor processing chambers, and more particularly to adjustable insulating plates and methods for adjusting the angle and / or height of insulating plates within a processing chamber. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a wide variety of applications, including the fabrication of integrated devices and microdevices. One method of processing substrates involves depositing a material, such as a dielectric or semiconductor material, on the upper surface of the substrate. The material can be deposited in a lateral flow chamber by flowing a process gas parallel to the surface of the substrate positioned on a support and pyrolyzing the process gas to deposit the material from the gas onto the substrate surface. However, the material deposited on the substrate surface often has a non-uniform thickness, which can adversely affect the performance of the final device.

[0003]

[0003] Therefore, there is a need for improved process chamber components and related methods that facilitate the deposition of materials with more uniform thicknesses. Summary of the Invention

[0004]

[0004] The present disclosure relates to semiconductor processing chambers, and more particularly to one or more methods for adjusting the angle and / or height of insulating plates within a processing chamber.

[0005] In one or more embodiments, a substrate processing method suitable for use in semiconductor manufacturing is provided. The method includes heating a substrate positioned on a substrate support. The method includes moving an insulating plate to adjust one or more of a height of the insulating plate or an angle of the insulating plate such that the insulating plate moves in a non-parallel orientation relative to the substrate. The method also includes flowing one or more process gases over the substrate to deposit material on the substrate, the flow including directing the one or more process gases through one or more flow paths defined at least in part by a space between the insulating plate and the substrate.

[0006] In one or more embodiments, a substrate processing method suitable for use in semiconductor manufacturing is provided. The method includes heating a substrate positioned on a substrate support. The method includes moving an insulating plate in a non-parallel orientation relative to the substrate, the insulating plate including a first end adjacent a process gas entry point, wherein moving the insulating plate in a non-parallel orientation relative to the substrate does not substantially change the height of the first end of the insulating plate. The method also includes flowing one or more process gases over the substrate, the flowing including directing the one or more process gases through one or more flow passages defined at least in part by a space between the insulating plate and the substrate.

[0007] In one or more embodiments, a flow guide applicable for use in semiconductor manufacturing is provided. The flow guide includes an insulating plate, a mechanical actuator, and an adjustment mechanism coupled to the mechanical actuator. The adjustment mechanism is configured to induce angular movement of the insulating plate.

[0008]

[0008] In order that the above-described features of the present disclosure may be understood in detail, the above-summarized disclosure will be more particularly described by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a partial schematic cross-sectional side view of a processing chamber according to one or more embodiments. [Figure 2] 1 is a partial schematic cross-sectional side view of a processing chamber according to one or more embodiments. [Figure 3] 1 is a partial schematic cross-sectional side view of a processing chamber according to one or more embodiments. [Figure 4] 1 is a schematic partial perspective view of a flow guide insert according to one or more embodiments. FIG. [Figure 5A] 1 is a schematic, partial cross-sectional side view of an insulating plate and an adjustment mechanism according to one or more embodiments. FIG. [Figure 5B] 1 is a schematic, partial cross-sectional side view of an adjustment mechanism according to one or more embodiments. FIG. [Figure 5C] FIG. 1 is a schematic partial perspective view of an adjustment mechanism according to one or more embodiments. [Figure 5D] FIG. 1 is a schematic partial perspective view of an adjustment mechanism according to one or more embodiments. [Figure 6] 1 is a schematic, partial cross-sectional side view of an insulating plate and an adjustment mechanism according to one or more embodiments. FIG. [Figure 7] 1 is a schematic, partial cross-sectional side view of an insulating plate and an adjustment mechanism according to one or more embodiments. FIG. [Figure 8A] 1 is a partial schematic cross-sectional side view of an insulating plate according to one or more embodiments. [Figure 8B] 1 is a partial schematic cross-sectional side view of an insulating plate according to one or more embodiments. [Figure 9]1 is a schematic block diagram of a substrate processing method according to one or more embodiments. [Figure 10] 1 is a partial schematic cross-sectional side view of a processing chamber with an insulating plate lift assembly in a lowered position according to one or more embodiments. [Figure 11] 1 is a partial schematic cross-sectional side view of a processing chamber with an insulating plate lift assembly in a raised position according to one or more embodiments. [Figure 12] 1 is a partial schematic top view of a processing chamber having an insulating plate lift assembly according to one or more embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0023] To facilitate understanding, wherever possible, the same reference numerals have been used to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0011]

[0024] FIELD OF THE DISCLOSURE The present disclosure relates to semiconductor processing chambers, and more particularly to one or more methods for adjusting the angle and / or height of insulating plates within a processing chamber.

[0012]

[0025] Process chamber designs that include insulating plates significantly improve gas flow control. Fine adjustments can be made over a small range using the substrate lift position. Further adjustments to the insulating plate angle and / or insulating plate height can improve deposition uniformity and gas velocity during gas utilization. Increasing the space between the insulating plate and the substrate can decrease gas velocity, resulting in increased deposition on the substrate. Narrowing the space between the insulating plate and the substrate can increase gas velocity, resulting in reduced deposition on the substrate. Reducing the gap between the insulating plate and the substrate support during chamber cleaning steps can shorten chamber cleaning times. Widening the gap during high-temperature substrate processing steps can reduce window coating and extend the time between cleaning processes. Other processes may require different gaps and insulating plate angles.

[0013] FIG. 1 is a partial schematic cross-sectional side view of a processing chamber 1000 according to one or more embodiments. The processing chamber 1000 is a deposition chamber. In one or more embodiments, the processing chamber 1000 is an epitaxial deposition chamber. The processing chamber 1000 is used to grow an epitaxial film on a substrate 102. The processing chamber 1000 creates a cross-flow of precursors across the top surface of the substrate 102. The processing chamber 1000 is illustrated at the processing conditions in FIG.

[0014] A processing chamber 1000 includes an upper body 156, a lower body 148 disposed below the upper body 156, and a flow module 112 disposed between the upper body 156 and the lower body 148. The upper body 156, the flow module 112, and the lower body 148 form a chamber body. Disposed within the chamber body are a substrate support 106, an upper window 108 (e.g., an upper dome), a lower window 110 (e.g., a lower dome), multiple upper heat sources 141, and multiple lower heat sources 143. The present disclosure contemplates that each heat source described herein may include one or more of lamp(s), resistive heater(s), light-emitting diode (LED)(s), and / or laser(s). The present disclosure contemplates that other heat sources may be used.

[0015] The substrate support 106 is disposed between an upper window 108 and a lower window 110. The substrate support 106 includes a support surface 123 that supports the substrate 102. A plurality of upper heat sources 141 are disposed between the upper window and a lid 154. The plurality of upper heat sources 141 form part of an upper heat source module 155. The lid 154 may include a plurality of sensors (not shown) disposed therein or thereon to measure the temperature within the processing chamber 100. A plurality of lower heat sources 143 are disposed between the lower window 110 and a floor 152. The plurality of lower heat sources 143 form part of a lower heat source module 145. In one or more embodiments, the upper window 108 is an upper dome and is formed of an energy-transmitting material such as quartz. In one or more embodiments, the lower window 110 is a lower dome and is formed of an energy-transmitting material such as quartz. A preheat ring 302 is disposed outside the substrate support 106. The preheat ring 302 is supported on a ledge of the lower liner 311. The stop 304 includes a plurality of arms 305 a, 305 b, each including a lift pin stop 122 upon which at least one of the lift pins 132 may rest when the substrate support 106 is lowered (e.g., from a process position to a transfer position).

[0016]

[0004] Disposed within the interior region is a substrate support 106. The substrate support 106 includes an upper surface on which the substrate 102 is disposed. The substrate support 106 is attached to a shaft 118. The shaft 118 is connected to a motion assembly 121. The motion assembly 121 includes one or more actuators and / or adjustment devices that move and / or adjust the shaft 118 and / or the substrate support 106.

[0017] The substrate support 106 may include lift pin holes 107 disposed therein. The lift pin holes 107 are sized to accommodate lift pins 132 for lifting the substrate 102 from the substrate support 106 either before or after a deposition process is performed.

[0018] The flow guide insert 1010 includes an insulating plate 321 having a first surface 1012 and a second surface 1013 opposite the first surface 1012. The second surface 1013 faces the substrate support 106. The flow guide insert 1010 includes an upper liner 1020. The upper liner 1020 includes an annular section 1021. The upper liner 1020 includes one or more inlet openings 1023 that extend to an inner surface 1024 of the annular section 1021 on a first side of the upper liner 1020 and one or more outlet openings 1025 that extend to the inner surface 1024 of the annular section 1021 on a second side of the upper liner 1020. It is contemplated that some or all of the inner surface 1024 may be curved to engage with the insulating plate 321 due to the angle of the insulating plate 321.

[0019]

[0007] One or more inlet openings 1023 extend from an outer surface 1026 to an inner surface 1024 of the annular section 1021 of the upper liner 1020. One or more outlet openings 1025 extend from a lower surface 1029 of the upper liner 1020 to the inner surface 1024. The upper liner 1020 includes a first extension 1027 and a second extension 1028 disposed outside the lower surface 1029 of the upper liner 1020. At least a portion of the annular section 1021 of the upper liner 1020 is aligned with the first extension 1027 and the second extension 1028. In the embodiment shown in FIG. 1, the bottom edge of the insulating plate 321 is aligned above the bottom edge of the upper liner 1020. 1, the bottom edge of insulating plate 321 is part of second surface 1013, and the bottom edge of upper liner 1020 is part of first extension 1027 and / or second extension 1028. The present disclosure contemplates that the bottom edge of upper liner 1020 may be part of lower surface 1029.

[0020] Insulating plate 321 is disk-shaped and annular section 1021 is ring-shaped. However, it is contemplated that insulating plate 321 and / or annular section 1021 may be rectangular or other geometric shapes. Insulating plate 321 at least partially fluidly separates upper portion 136b from lower portion 136a.

[0021] The flow module 112 (which may be at least a portion of one or more sidewalls of the processing chamber 1000) includes one or more first inlet openings 1014 fluidly connected to the lower portion 136a of the processing region 136. The flow module 112 includes one or more second inlet openings 1015 fluidly connected to the upper portion 136b of the processing region 136. The one or more first inlet openings 1014 are fluidly connected to one or more flow gaps between the upper liner 1020 and the lower liner 311. The one or more second inlet openings 1015 are fluidly connected to one or more inlet openings 1023 in the upper liner 1020. The gas inlet(s) 1014 are fluidly connected to one or more process gas sources 151 and one or more cleaning gas sources 153. The purge gas inlet(s) 164 are fluidly connected to one or more purge gas sources 162. One or more gas exhaust outlets 116 are fluidly connected to an exhaust pump 157. The one or more process gases supplied using the one or more process gas sources 151 can include one or more reactive gases (such as one or more of a silicon-containing gas, a phosphorus-containing gas, and / or a germanium-containing gas, and / or one or more carrier gases (such as one or more of nitrogen (N) and / or hydrogen (H)). The one or more purge gases supplied using the one or more purge gas sources 162 can include one or more inert gases (such as one or more of argon (Ar), helium (He), and / or nitrogen (N)). The one or more cleaning gases supplied using the one or more cleaning gas sources 153 can include one or more of hydrogen and / or chlorine. In one embodiment, which can be combined with other embodiments, the one or more process gases include silicon phosphide (SiP) and / or phosphine (PH), and the one or more cleaning gases include hydrochloric acid (HCl).

[0022] The one or more gas exhaust outlets 116 are further connected to or include an exhaust system 178. The exhaust system 178 fluidly connects the one or more gas exhaust outlets 116 to an exhaust pump 157. The exhaust system 178 can assist in controlled deposition of a layer on the substrate 102. The exhaust system 178 is located on an opposite side of the processing chamber 100 from the flow module 112.

[0023] In one or more embodiments, the one or more inlet openings 1023 are oriented horizontally and the one or more outlet openings 1025 are oriented diagonally, as shown in Figure 1. The present disclosure contemplates that the one or more inlet openings and / or outlet openings 1023, 1025 may be oriented horizontally, diagonally, and / or may include one or more redirections (such as those shown for the one or more first inlet openings 1014 and the one or more gas exhaust outlets 116).

[0024] During a deposition process (e.g., an epitaxial growth process), one or more process gases P1 flow through one or more first inlet openings 1014, through one or more gaps, into the lower portion 136a of the processing region 136, and over the substrate 102. During the deposition process, one or more purge gases P2 flow through one or more second inlet openings 1015, through one or more inlet openings 1023 in the upper liner 1020, and into the upper portion 136b of the processing region 136. The one or more purge gases P2 flow simultaneously with the flow of the one or more process gases P1. The flow of the one or more purge gases P2 through the upper portion 136b facilitates reducing or preventing the flow of one or more process gases P1 into the upper portion 136b, which would contaminate the upper portion 136b. One or more process gases P1 pass through the gap between the upper liner 1020 and the lower liner 311 and are exhausted through one or more gas exhaust outlets 116. One or more purge gases P2 pass through one or more outlet openings 1025 and through the same gap between the upper liner 1020 and the lower liner 311 as the one or more process gases P1 and are exhausted through the same one or more gas exhaust outlets 116. The present disclosure contemplates that one or more purge gases P2 may be separately exhausted through one or more second gas exhaust outlets separate from the one or more gas exhaust outlets 116.

[0025] The present disclosure also contemplates that one or more purge gases may be supplied to and exhausted from the purge region 138 (through the multiple purge gas inlets 164) during the deposition process.

[0026] As shown, a controller 195 is in communication with the processing chamber 1000 and is used to control processes and methods, such as at least some of the steps of the methods described herein.

[0027] The controller 195 is configured to receive data or input as sensor readings from a plurality of sensors. The sensors may include, for example, sensors that monitor the growth of layer(s) on the substrate 102, sensors that monitor growth or residue on the interior surfaces of chamber components of the processing chamber 1000 (such as the interior surfaces of the upper window 108 and / or liners 1020, 311), sensors that monitor the gas flow of one or more process gases P1, and / or sensors that monitor the temperature of the substrate 102, substrate support 106, upper window 108, lower window 110, upper liner 1020, and / or lower liner 311. The controller 195 includes or is in communication with a system model of the processing chamber 100. The system model may include a heating model, a deposition model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters within the process chamber 1000 (such as gas flow rates, angular position of the plate 321, height of the plate 321, center-to-edge uniformity profile, gas pressure, process temperature, rotational position of component(s), heating profile, coating conditions, and / or cleaning conditions) throughout the deposition and / or cleaning process. The controller 195 is further configured to store readings and calculations. The readings and calculations include previous sensor readings, such as any previous sensor readings within the process chamber 100. The readings and calculations also include stored calculations after sensor readings have been measured by the controller 195 and run through the system model. Thus, the controller 195 is configured to retrieve stored readings and calculations as well as save the readings and calculations for future use. Maintaining previous readings and calculations allows the controller 195 to adjust the system model over time to reflect more accurate versions of the process chamber 100.

[0028]

[0016] The controller 195 can monitor and estimate the optimized parameters, adjust the angular position of the plate 321 and / or the height of the plate 321, detect the coating status of the upper window 108, generate an alert on the display, stop the deposition process, initiate chamber downtime, delay subsequent repetitions of the deposition process, start a cleaning process, detect the cleaning status of the upper window 108, stop the cleaning process, adjust the heating power, and / or otherwise adjust the process strategy.

[0029] Controller 195 includes a central processing unit (CPU) 198 (e.g., processor), memory 196 containing instructions, and support circuits 197 for CPU 198. Controller 195 controls various items directly or through other computers and / or controllers. In one or more embodiments, controller 195 is communicatively coupled to a dedicated controller, with controller 195 functioning as a central controller.

[0030] The controller 195 is any form of general-purpose computer processor used in industrial environments to control various substrate processing chambers and equipment, as well as sub-processors thereon or therein. The memory 196, or non-transitory computer-readable medium, is one or more of readily available memory such as random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, local or remote. The support circuits 197 of the controller 195 are coupled to the CPU 198 to support the CPU 198. The support circuits 197 include cache, power supplies, clock circuits, input / output circuits and subsystems, etc. Process parameters (e.g., center-to-edge profile, angular position of plate 321, height of plate 321, coating conditions, process gas P1 pressure, process temperature, heating profile, process gas P1 flow rate, cleaning gas pressure, cleaning gas flow rate, and / or rotational position of substrate support 106) and processes are stored in memory 196 as software routines that are executed or called to convert controller 195 into a special-purpose controller that controls the processes of the various chambers / modules described herein. Controller 195 is configured to perform any of the processes described herein. The instructions stored on memory, when executed, cause one or more of the processes of method 900 (described below) to be performed in conjunction with process chamber 100. Controller 195 and process chamber 100 are at least part of a system for processing substrates.

[0031]

[0019] The various steps described herein (such as the steps of method 900) can be performed automatically using controller 195, or can be performed automatically or manually using specific operations performed by a user.

[0032] In one or more embodiments, the controller 195 includes a mass storage device, an input control unit, and a display unit. The controller 195 monitors the temperature of the substrate 102, the temperature of the substrate support 106, the temperature of the top window 108, the flow of process gases, and / or the flow of purge gases. In one or more embodiments, the controller 195 includes multiple controllers 195 such that the stored readings and calculations and the system model are stored in a controller separate from the controller 195 that controls the operation of the processing chamber 100. In one or more embodiments, the system model and the stored readings and calculations are all stored in the controller 195.

[0033] The controller 195 is configured to control the sensor arrangement, cleaning, rotational position, heating, and gas flow through the processing chamber 100 by providing outputs to controls for the heat sources, gas flow, and motion assembly 121. The controls include controls for the sensor arrangement, the upper heat source 141, the lower heat source 143, the process gas source 151, the purge gas source 162, the motion assembly 121, and the exhaust pump 157.

[0034] The controller 195 is configured to adjust outputs to the control system based on sensor readings, a system model, and stored readings and calculations. The controller 195 includes embedded software and correction algorithms for calibrating measurements. The controller 195 can include one or more machine learning and / or artificial intelligence algorithms that estimate optimized parameters for the deposition and / or cleaning processes (e.g., adjusting the deposition process (e.g., process recipe), stopping the deposition process, initiating chamber downtime, delaying subsequent iterations of the deposition process, starting the cleaning process, stopping the cleaning process, adjusting heating power, and / or adjusting the cleaning process, etc.). The optimized parameters can include, for example, temperature, gas flow rate, and / or deposition thickness center-to-edge profile of the substrate 102 (facilitating uniformity).

[0035] One or more machine learning and / or artificial intelligence algorithms can implement, adjust, and / or refine one or more of the algorithms, inputs, outputs, or variables described above. Additionally or alternatively, one or more machine learning and / or artificial intelligence algorithms can rank or prioritize certain aspects of the adjustment of the process chamber 1000 and / or method 900 relative to other aspects of the process chamber 1000 and / or method 900. One or more machine learning and / or artificial intelligence algorithms can account for other changes in the processing system, such as hardware replacement and / or degradation. In one or more embodiments, one or more machine learning and / or artificial intelligence algorithms account for upstream or downstream changes that may occur in the processing system due to changes in the variables of the process chamber 1000 and / or method 900. For example, if variable "A" is adjusted to cause a change in process aspect "B," and such adjustment unintentionally causes a change in process aspect "C," one or more machine learning and / or artificial intelligence algorithms can take such change in aspect "C" into account. In such embodiments, one or more machine learning and / or artificial intelligence algorithms embody predictive aspects related to the process chamber 1000 and / or the performance of the method 900. The predictive aspects can be utilized to proactively mitigate unintended changes in the processing system.

[0036] The one or more machine learning and / or artificial intelligence algorithms can use, for example, regression models (such as linear regression models) or clustering techniques to estimate the optimized parameters. The algorithms can be unsupervised or supervised. The one or more machine learning and / or artificial intelligence algorithms can optimize, for example, the heating power applied to the heat sources 141, 143, the angular position of the plate 321, and / or the height of the plate 321. The one or more machine learning and / or artificial intelligence algorithms can optimize, for example, the size and / or shape of the lower portion 136a and / or the upper portion 136b using the angular position and / or height of the plate 321.

[0037] One or more machine learning and / or artificial intelligence algorithms can, for example, optimize the center-to-edge gas concentration profile across the substrate 102 during a deposition process. The center-to-edge gas concentration profile can be pre-generated using a simulation process, and the one or more machine learning and / or artificial intelligence algorithms can use data collected in real time to adjust the center-to-edge gas concentration profile. The center-to-edge concentration profile can be affected by, for example, the size and / or shape of the lower portion 136a.

[0038] In one or more embodiments, the controller 195 automatically performs one or more of the steps described herein without the use of one or more machine learning or artificial intelligence algorithms. In one or more embodiments, the controller 195 compares measurements (such as gas flow rate(s)) and / or deposition thickness to data in a lookup table and / or library to determine whether adjustment(s) can be used to enhance the center-to-edge profile. The controller 195 can store the measurements as data in the lookup table and / or library.

[0039]

[0026] Figure 2 is a partial schematic cross-sectional side view of the processing chamber 1000 shown in Figure 1, in accordance with one or more embodiments, showing the processing chamber 1000 in a cleaning state.

[0040] During the cleaning process, one or more cleaning gases C1 flow through one or more first inlet openings 1014, through one or more gaps (between the upper liner 1020 and the lower liner 311), and into the lower portion 136a of the processing region 136. During the cleaning process, one or more cleaning gases C2 flow through one or more second inlet openings 1015, through one or more inlet openings 1023 in the upper liner 1020, and into the upper portion 136b of the processing region 136. The one or more cleaning gases C2 flow simultaneously with the flow of the one or more cleaning gases C1. The present disclosure contemplates that the one or more cleaning gases C2 used to clean surfaces adjacent the upper portion 136b can be the same as or different from the one or more cleaning gases C1 used to clean surfaces adjacent the lower portion 136a of the processing region 136.

[0041] The processing chamber 1000 facilitates separating gases supplied to the lower portion 136a from gases supplied to the upper portion 136b, thereby facilitating tunability of parameters. Additionally, one or more purge gases and one or more cleaning gases may be supplied separately to the upper portion 136b to facilitate reducing contamination of the window 108 and / or insulating plate 321.

[0042] 1 and 2, the one or more second inlet openings 1015 may be aligned above the one or more first inlet openings 1014, and the one or more inlet openings 1023 in the upper liner 1020 may be aligned above one or more gaps between the upper liner 1020 and the lower liner 311. The one or more second inlet openings 1015 may be angularly offset from the one or more first inlet openings 1014, and the one or more inlet openings 1023 in the upper liner 1020 may be angularly offset from the one or more gaps between the upper liner 1020 and the lower liner 311.

[0043]

[0030] The flow of gas in the lower portion 136a and upper portion 136b during both the deposition and cleaning processes facilitates the reduction or elimination of backflow of gas at one or more outlet openings 1025 (e.g., backflow from one or more outlet openings 1025 into the upper portion 136b) and one or more gas exhaust outlets 116 (e.g., backflow from the gap into the lower portion 136a).

[0044]

[0031] Figure 3 is a partial schematic cross-sectional side view of a processing chamber 3000 according to one or more embodiments. Processing chamber 3000 is similar to processing chamber 1000 shown in Figures 1 and 2 and includes one or more of the aspects, features, components, characteristics, and / or operations thereof. Figure 3 shows chamber 3000 in a processing state.

[0045] The processing chamber 3000 includes a window 3008 that at least partially defines the processing region 136. The window 3008 includes a concave or flat first surface 3011 (in the embodiment shown in FIG. 3, the first surface 3011 is flat). The window 3008 includes a convex second surface 3012. The second surface 3012 faces the substrate support 106.

[0046] The processing chamber 3000 includes a liner 3020. The liner 3020 is similar to the upper liner 1020 shown in FIGS. 1 and 2 and includes one or more aspects, features, components, characteristics, and / or operation thereof. The processing chamber 3000 includes a flow guide insert 310 (shown in FIG. 4). A parallel block 331 is positioned below the insulating plate 321 and above the substrate support 106. The parallel block 331 aids in the flow of the process gas P1 over the substrate 102 and promotes improved deposition uniformity. In one or more embodiments, the flow guide insert 310 is supported by and / or coupled to the upper liner 3020 and / or the preheat ring 302. In one or more embodiments, the flow guide insert 310 rests on the upper liner 3020 and / or the preheat ring 302.

[0047] The window 3008 includes an inner section 3013 and an outer section 3014. The first surface 3011 and the second surface 3012 are at least a portion of the inner section 3013. The inner section 3013 is transparent, and the outer section 3014 is opaque. The outer section 3014 is at least partially received in one or more sidewalls of the processing chamber 3000 (such as the flow module 112 and / or the upper body 156).

[0048] FIG. 4 is a schematic partial perspective view of a flow guide insert 310 according to one or more embodiments.

[0049] The insulating plate 321 has a first side 322 along the first direction D1 (adjacent to the gas inlet 114 in FIGS. 3 and 4) and a second side 323 opposite the first side 322. The first side 322 and the second side 323 are each arc-shaped.

[0050] 4, the flow guide insert 310 includes a first parallel block 331 extending outwardly relative to the third side 324 of the insulating plate 321 and extending outwardly relative to the outer surface 345 of the insulating plate 321, and a second parallel block 332 extending outwardly relative to the fourth side 325 of the insulating plate 321 and extending outwardly relative to the outer surface 345 of the insulating plate 321. It is contemplated that the first parallel block 331 and the second parallel block 332 (as shown in FIGS. 1 and 2) may be omitted from the flow guide insert 310. In one or more embodiments in which the parallel blocks 331 and 332 are omitted, the insulating plate 321 may be supported by the upper liner 1020 and / or the insulating plate 321 may be mounted to the interior of the processing chamber via a pivot point or another mounting mechanism. The fourth side 325 is opposite the third side 324 along a second direction D2 that intersects the first direction D1. In one or more embodiments, the second direction D2 is perpendicular to the first direction D1. The third side 324 and the fourth side 325 are linear. In FIGS. 1-3 , the first and second parallel blocks 331, 332 are at least partially supported by the substrate support 106 such that raising and lowering the substrate support 106 raises and lowers the flow guide insert 310 via the parallel blocks 331, 332. A rectangular flow opening 350 is defined between a first flat inner surface 333 of the first parallel block 331 and a second flat inner surface 334 of the second parallel block 332. The first parallel block 331 and the second parallel block 332 are each semicircular. In one or more embodiments, the insulating plate 321 is formed of quartz, and the first and second parallel blocks 331, 332 are each formed of silicon carbide (SiC). The rectangular flow opening 350 has a three-dimensional rectangular box shape, such that the rectangular flow opening 350 has a rectangular shape in each of the XY plane, the XZ plane, and the YZ plane. When the flow guide insert 310 is in the processing position, the rectangular flow opening 350 is defined by one or more of the first inner flat surface 333, the second inner flat surface 334, the top surface of the substrate 102, the top surface of the substrate support 106, and / or the top surface of the preheat ring 302.

[0051] In embodiments having first and second parallel blocks 331, 332, it is contemplated that the size of the parallel blocks can be changed to increase or decrease the lower portion 136a of the processing region 136. It is also contemplated that the first and second parallel blocks 331, 332 can include actuating supports configured to mechanically raise and lower the insulating plate 321.

[0052] In one or more embodiments, it is contemplated that the upper and lower mating surfaces of the insulating plate 321 and the first and second parallel blocks 331, 332 may be curved and may have matching radii of curvature (e.g., semicircular). The curved mating surfaces allow the insulating plate 321 to rotate relative to the first and second parallel blocks 331, 332 and prevent airflow between the mating portions of the insulating plate 321 and the first and second parallel blocks 331, 332.

[0053]

[0040] One or more process gases P1 flow through rectangular flow openings 350 as they flow through the lower portion 136a and over the substrate 102. The rectangular flow openings 350 facilitate tunability of process gases, purge gases, and / or cleaning gases (e.g., pressure and flow rate) and promote process and deposition uniformity while providing a path for cleaning gases to the upper portion 136b. In one example, the rectangular flow openings 350 facilitate the use of high pressures and low flow rates for process and cleaning gases. The rectangular flow openings 350 also help mitigate the effects of substrate 102 rotation during a deposition process on process and film thickness uniformity. In one example, the rectangular flow openings mitigate or eliminate the effects of gas vortices.

[0054] 5A is a partial schematic cross-sectional side view of an insulating plate 521 and an adjustment mechanism 500 according to one or more embodiments. The insulating plate 521 and adjustment mechanism 500 may be utilized in either the processing chamber 1000 and / or 3000. The adjustment mechanism 500 facilitates adjustment of the plane of the insulating plate 521 relative to the plane of the substrate support 106 and / or the substrate 502. Adjusting the orientation of the plane of the insulating plate 521 relative to the plane of the substrate 502 changes the relative distance between portions of the insulating plate 521 and the substrate 502. The change in distance affects the velocity of gas flowing between the insulating plate 521 and the substrate 502, allowing the velocity at the leading edge of the substrate 502 to be adjusted relative to the velocity at the trailing edge of the substrate 502. Because the deposition rate is proportional to the gas velocity, changing the orientation of the insulating plate 521 allows the deposition rate from the leading edge to the trailing edge of the substrate 502 to be adjusted. Such changes may result in a more uniform deposition thickness across the substrate 502.

[0055] In FIG. 5A , the adjustment mechanism 500A includes a pivot shaft 570 about which the plane of the insulating plate 521 rotates. In one or more embodiments, the pivot shaft 570 is located at the center 580 of the processing chamber 1000, 3000 (e.g., equidistant from the gas inlets and outlets of the processing chamber 1000, 3000, or perpendicular to the flow path of process gases above the substrate 502). Thus, in one or more embodiments, adjusting the insulating plate 351 results in equal (e.g., absolute) changes in plate position at the leading edge (e.g., +X mm) of the insulating plate and at the trailing edge (e.g., −X mm) of the insulating plate 521. It is also contemplated that the pivot shaft 570 is not positioned at the center of the processing chamber or insulating plate. For reference, the cross-sectional view shown in FIG. 5A is positioned in a cross-flow chamber, such as the processing chamber 1000 and / or 3000, such that process gases flow from the left of the image to the right of the image. Other orientations are also contemplated.

[0056] For reference, the upper liner 1020 is shown in FIG. 5A. The upper liner 1020 may optionally include a concave surface 5024 on its radially inner surface. The concave surface 5024 is sized to maintain a predetermined distance between the distal end of the insulating plate 521 and the upper liner 1020, even when the insulating plate 521 rotates. Thus, outgassing between the insulating plate 521 and the upper liner 1020 is reduced. It is envisioned that the concave surface 5024 extends over substantially the entire inner surface of the upper liner 1020.

[0057] Pivot shaft 570 is disposed within upper liner 1020 and is rotatable within a receptacle therein. In one or more embodiments, pivot shaft 570 may be received within a bearing sleeve housed within upper liner 1020 to facilitate pivoting (e.g., rotation). Actuator 571 is coupled to pivot shaft 570 to induce movement. The actuator may be, for example, a stepper motor, a pneumatic actuator, or the like. Additionally, while one pivot shaft 570 is illustrated, it is envisioned that insulating plate 521 may include a second pivot shaft opposite the first pivot shaft (e.g., spaced 180 degrees from the first pivot shaft) to provide additional support for the insulating plate.

[0058] The adjustment mechanism 500A includes locking pins 560a, 560b, and 560c. In one or more embodiments, the adjustment mechanism can include more or fewer locking pins 560a, 560b, and 560c. The positions of the locking pins 560a, 560b, and 560c determine the adjusted position of the insulating plate 521a. In one or more embodiments, the positions of the locking pins 560a, 560b, and 560c can be determined based on the position of the insulating plate 521 relative to the substrate 502. In one or more embodiments, it is envisioned that the insulating plate 521 is attached to the pivot shaft 570, and optional locking pins 560a, 560b, and 560c are inserted into the upper liner 1020 based on the desired angle of the insulating plate 521 to secure the insulating plate 521 in place. The insulating plate 521 rests on the inserted locking pins 560a, 560b, and 560c. It is also envisioned that locking pins 560a, 560b, 560c may be located on a mechanism that locks the angle of the insulating plates. In one or more embodiments, a wheel having holes therein for inserting locking pins 560a, 560b, 560c is located around pivot shaft 570.

[0059] As shown in FIG. 5A , the adjustment mechanism 500A allows for clockwise rotation 566 of the insulating plate 521. In one or more embodiments, the adjustment mechanism 500A allows for counterclockwise rotation and / or both clockwise and counterclockwise rotation. A circle 564 indicates the range over which the insulating plate 521 can rotate, and the circle 564 is bisected by the center 580 of the processing chamber 1000, 3000. It is contemplated that the vertical position of the substrate support can be adjusted as needed to accommodate the positioning of the insulating plate 521. In one or more embodiments, the insulating plate 521 can rotate up to ±30°. In one or more embodiments, the insulating plate 521 can rotate up to ±5°. In one or more embodiments, the insulating plate 521 can rotate up to ±3.5°.

[0060] 5B-5D illustrate an adjustment mechanism 500B according to one or more embodiments. As shown in FIGS. 5B-5D, the adjustment mechanism 500B includes an upper member 572 and a lower member 574. A pivot shaft 570 is located on (and / or coupled to) the upper member 572 to allow adjustment of the plane of the insulating plate. The pivot shaft 570 supports an insulating plate, such as the insulating plate 521 shown in FIG. 5A. Referring to FIGS. 1 and 3, the lower member 574 is coupled to the inner surface 1024 of the upper liner 1020 of either the processing chamber 1000 or 3000. It is contemplated that a lip or ring may be coupled to the inner surface 1024 to facilitate coupling the lower member 574 to the inner surface 1024. It is also envisioned that upper member 572 interacting with inner surface 1024 may form a self-locking mechanism, for example, upper member 572 and inner surface 1024 may be threaded, to support movement of upper member 572. Other manners of supporting upper member 572 and lower member 574 are also envisioned. Lower member 574 rotates in a clockwise direction 576 about a central axis 582 of lower member 574 (e.g., coaxial with axis A in FIGS. 1 and 3). In one or more embodiments, lower member 574 may rotate in a counterclockwise direction.

[0061] Adjustment mechanism 500B is a bifurcated cylinder having an upper member 572 and a lower member 574. Upper member 572 has a lower surface 573 that mates with an upper surface 575 of lower member 574. Lower surface 573 of upper member 572 and upper surface 575 of lower member 574 are disposed in a plane that is not perpendicular to central axis 582 of adjustment mechanism 500B. Thus, as lower member 574 rotates relative to upper member 572 (or vice versa), upper member 572 moves vertically in response to changes in engagement of the mating surfaces between lower member 574 and upper member 572. Thus, movement of lower member 574 changes the relative vertical position (e.g., height) of an insulating plate coupled to upper member 572 within the processing chamber. To facilitate vertical actuation of upper member 572, it is envisioned that upper member 572 may ride on rails or tracks that orient upper member 572 as vertical changes occur. Lower member 574 or upper member 572 may be actuated using an actuator such as, for example, a mechanical motor, a pneumatic motor, or a stepper motor.

[0062] In FIG. 5C, the adjustment mechanism 500B is in a first position. In FIG. 5C, the adjustment mechanism has a first height H1. In FIG. 5D, the adjustment mechanism 500B is in a second (e.g., rotated) position. In FIG. 5D, the adjustment mechanism has a second height H2. The second height H2 is greater than the first height H1. It is contemplated that only partial rotation of the lower member 574 is required to extend the height of the upper member 572 between H1 and H2. It is contemplated that the adjustment mechanism 500B may incorporate other structure to stabilize and facilitate movement of the adjustment mechanism 500B.

[0063] Adjustment mechanism 500A can use adjustment mechanism 500B in combination with an angling mechanism to induce a wider range of angular movement of insulating plate 521. In one or more embodiments, adjustment mechanism 500A can use other methods of angling insulating plate 521.

[0064] 6 is a partial schematic cross-sectional side view of an insulating plate 621 and an adjustment mechanism 600 according to one or more embodiments. The insulating plate 621 and adjustment mechanism 600 can be used in either of the processing chambers 1000 and / or 3000. The adjustment mechanism 600 is similar to the adjustment mechanism 500, in that the insulating plate 621 pivots at its end points rather than at its midpoint like the insulating plate 521. In one or more embodiments, the insulating plate 621 can pivot at its end points such that movement of the insulating plate 621 results in substantially no change in height of the first end of the insulating plate 621 (e.g., a change of 1.0 mm or less, such as 0.5 mm or less).

[0065] 6, the adjustment mechanism 600 includes a pivot shaft 670. The pivot shaft 670 is located adjacent to a gas inlet or gas outlet of the processing chamber and cantilever-supports an insulating plate 621. In one or more embodiments, the pivot shaft 670 is positioned vertically directly above either the gas inlet or gas outlet of the processing chamber. The pivot shaft 670 is coupled to the upper liner 1020 and actuated by an actuator 671. In the example of FIG. 6, the distance between the insulating plate 621 and the substrate 602 varies to a lesser extent near the pivot shaft 670 compared to the distance between the insulating plate 621 and the substrate 602 at the end opposite the pivot shaft 670 (as shown by the adjusted position 621a of the insulating plate 621). Thus, in one or more embodiments, the gas velocity is differentially adjusted across the surface of the substrate 602 by changing the distance between the substrate 602 and the insulating plate 621.

[0066] As shown in FIG. 6 , the adjustment mechanism 600 allows for clockwise rotation 666 of the insulating plate 621. In one or more embodiments, the adjustment mechanism 600 may allow for counterclockwise rotation, or both clockwise and counterclockwise rotation. The adjustment mechanism 600 can rotate more or less depending on the desired angle between the insulating plate 621 and the substrate 602. The pivot shaft 670 can be rotated via an actuator 671, manual operation, or other forms of induced rotation. The features of the adjustment mechanism 600 in FIG. 6 can be used in combination with the features of the adjustment mechanism 500A in FIG. 5A or the adjustment mechanism 500B in FIGS. 5B-5D. The outer edge of the insulating plate 621 moves along the concave surface 6024 of the upper liner 1020, and rotation of the insulating plate 621 reduces gas flow between the insulating plate 621 and the upper liner 1020. In one or more embodiments, the insulating plate 621 can rotate up to ±30°. In one or more embodiments, insulating plate 621 may be capable of rotation up to ±5°. In one or more embodiments, insulating plate 621 may be capable of rotation up to ±3.5°.

[0067] 7 is a partial cross-sectional schematic side view of an insulating plate 721 and an adjustment mechanism 700 according to one or more embodiments. The insulating plate 721 and adjustment mechanism 700 can be used in either the processing chamber 1000 or 3000.

[0068] In FIG. 7 , the adjustment mechanism 700 includes a ramp 790 and an actuator 771 for guiding the insulating plate 721 onto the ramp 790. Movement of the insulating plate 721 along the ramp changes the orientation of the plane of the insulating plate 721. As shown in FIG. 7 , the ramp 790 may be located on the inner surface of the upper liner 1020 opposite the actuator 771. In other embodiments, the ramp 790 may be located at other locations such that movement of the insulating plate 721 along the surface of the ramp 790 by the actuator 771 changes the orientation of the plane of the insulating plate 721 relative to the plane of the substrate 702, thereby adjusting the angle of the plane of the insulating plate 721 relative to the plane of the substrate 702. In one or more embodiments, the insulating plate 721 moves in a non-parallel orientation relative to the substrate 702. For example, the plane of the insulating plate 721 (e.g., the plane of the lower surface) can be pivoted (e.g., rotated) to intersect with the plane of the substrate 702 (e.g., the plane of the upper surface) at an intersection angle A1 of 3 degrees or more, such as 5 degrees or more. In one or more embodiments, the angle A1 is in the range of 0 degrees to 15 degrees.

[0069] As shown in FIG. 7 , the ramp 790 has an angle θ. The angle θ can be large or small based on the desired adjustment position of the insulating plate 721a. In one or more embodiments, the angle θ ranges from 0° to 15°. In one or more embodiments, the angle θ is approximately equal to the angle A1. The present disclosure contemplates that the angle A1 can be different from the angle θ. In one or more embodiments, the top surface of the ramp 790 can be curved (e.g., non-linear) to facilitate gradual adjustment of the insulating plate 721 as it moves along the ramp 790. The amount that the insulating plate 721 is forced up the ramp 790 can vary based on the desired adjustment position of the insulating plate 721a. The insulating plate 721 can be forced up the ramp 790 via an actuator 771 or other form of induced movement. The features of adjustment mechanism 700 of FIG. 7 can be used in combination with the features of adjustment mechanism 500A of FIG. 5A, adjustment mechanism 500B of FIGS. 5B-5D, or adjustment mechanism 600 of FIG.

[0070] 8A-8B are partial schematic cross-sectional side views of insulating plates 821a and 821b according to one or more embodiments. As shown in FIG. 8A, insulating plate 821a is planar. It is contemplated that insulating plate 821a may be used in any of the embodiments described herein. In one or more embodiments, insulating plate 821b may be curved, as shown in FIG. 8B, and may alternatively be used in any of the embodiments described herein. In one or more embodiments, curved insulating plate 821b may have a curvature that is a parabola, a quadratic curve, or any other regular or irregular function. It is also contemplated that curved insulating plate 821b may include both curved and non-curved (straight) portions. It is contemplated that the height difference between the lowest point of curved insulating plate 821b and the highest point of the curved insulating plate may be 25 mm or less. The curvature of insulating plate 821b may be determined based on computational fluid dynamics (CFD) modeling, experimentation, or other methods for determining optimal gas flow rates within a processing chamber. The curved insulating plate 821b reduces the need for and / or amount of mechanical movement of the insulating plate 821b to achieve a given plate angle.

[0071]

[0058] The insulating plates 821a, 821b can be moved perpendicular to an axis and / or pivoted (e.g., rotated about an axis) to achieve a desired orientation. For example, insulating plate 821a can be moved vertically to an adjusted position, as shown by the dotted lines in FIG. 8A. Curved insulating plate 821b can be angled and / or pivoted (e.g., rotated) to an adjusted position, as shown by the dotted lines in FIG. 8B. It is contemplated that either insulating plate 821a, 821b can be pivoted (e.g., rotated) and / or actuated vertically, and it should be noted that the illustrations in FIGS. 8A and 8B are merely exemplary. The features of insulating plates 821a, 821b in FIGS. 8A-8B can be used in combination with the features of adjustment mechanism 500A in FIGS. 5A, adjustment mechanism 500B in FIGS. 5B-5D, adjustment mechanism 600 in FIG. 6, and / or adjustment mechanism 700 in FIG. 7.

[0072] FIG. 9 is a schematic block diagram of a substrate processing method 900 according to one or more embodiments.

[0073] Step 910 includes adjusting an insulating plate in the processing chamber. Step 910 can be performed, for example, via adjustment mechanism 500, 600, 700. The insulating plate can be adjusted up, down, and / or tilted. In one or more embodiments, the adjustment includes moving the insulating plate to adjust one or more of the height of the insulating plate or the angle of the insulating plate such that the insulating plate moves in a non-parallel orientation relative to the substrate.

[0074] In one or more embodiments, the insulating plate is adjusted to deposit a layer more uniformly on the substrate. In one or more embodiments, the insulating plate is adjusted to reduce the time for a cleaning step. In one or more embodiments, the insulating plate may be adjusted based on the particular process gas used in step 930. Step 910 may be performed before, simultaneously with, and / or after steps 920, 930, and 940. It is contemplated that the position of the insulating plate may be determined empirically, modeled, and / or derived via metrology data acquired during processing. A controller (e.g., controller 195) may store instructions to control actuators that adjust the insulating plate to achieve a predetermined process result.

[0075] In one or more embodiments, the insulating plate is adjusted so that the process gas velocity near the trailing edge of the substrate is lower than the process gas velocity near the leading edge of the substrate. The leading edge of the substrate may experience a higher deposition rate due to increased precursor concentration in the process gas. Rotating the substrate may not sufficiently reduce or eliminate deposition non-uniformity because the rotation can cause "low-center" deposition relative to the edge of the substrate. However, slowing the gas velocity by adjusting the angle of the insulating plate increases the deposition rate toward the trailing edge, improving deposition uniformity. When combined with substrate rotation, the "low-center" effect is further reduced.

[0076] Step 920 includes heating the substrate positioned on the substrate support. Step 920 can be performed before, simultaneously with, and / or after step 910. Heating can be accomplished via multiple heat sources (such as radiant heat sources) to a predetermined temperature, as described above.

[0077] Step 930 includes flowing one or more process gases over the substrate to form one or more layers on the substrate. Flowing the one or more process gases over the substrate optionally includes directing the one or more process gases through rectangular flow openings in a flow guide insert. In one or more embodiments, the one or more process gases are supplied at a pressure of 300 Torr or greater, for example, in the range of 300 Torr to 600 Torr or greater. In one or more embodiments, the one or more process gases are supplied at a flow rate of less than 5000 standard cubic centimeters per minute (SCCM). In one or more embodiments, the substrate is rotated at a rotational speed of less than 8 revolutions per minute (RPM) while flowing the one or more process gases over the substrate. In one or more embodiments, the rotational speed is 1 RPM.

[0078] Step 940 includes exhausting the one or more process gases through exhaust paths formed at least partially in the sidewalls.

[0079] Other processes may be performed before, during, or after completion of method 900. In one or more embodiments, a purge gas may be flowed through the processing chamber during method 900. In one or more embodiments, a cleaning gas may be flowed through the processing chamber after completion of method 900.

[0080] 10 is a partial schematic cross-sectional side view of a processing chamber 1000 with an insulating plate lift assembly 1030 in a lowered position, according to one or more embodiments. The insulating plate lift assembly 1030 includes a second stop 1004 that can be raised and lowered. The second stop 1004 includes multiple arms 1006a, 1006b, each including a lift pin stop 1022 on which the insulating plate lift pins 132 can rest when raised and lowered. The substrate support 106 and / or preheat ring 302 can include lift pin holes 1007 disposed therein that receive the insulating plate lift pins 132 therethrough. In one or more embodiments, the lift pin holes 1007 are each sized to accommodate an insulating plate lift pin 1034 for lifting the insulating plate 321 before, during, and / or after a deposition process.

[0081] 10, the second stop 1004 is separate from the stop 304 and the shaft 118. In one or more embodiments, one or more of the second stop 1004 (e.g., at least the shaft of the second stop 1004), the stop 304 (e.g., at least the shaft of the stop 304), and / or the shaft 118 are combined to facilitate simultaneous movement of the insulating plate 321 and the substrate 102. This combined configuration can be used to maintain the spacing between the insulating plate 321 and the substrate 102 while adjusting (e.g., moving) the cross-section of the flow of the process gas P1. For example, the position of the cross-section of the flow of the process gas P1 can be moved while the size of the cross-section of the flow of the process gas P1 is maintained substantially constant.

[0082] In one or more embodiments, at least one of the lift pin stops 1022 is separated from the other lift pin stops 1022 and / or other lift pin stops 122. The lift pin stops 1022 may have any regular or irregular shape. In one or more embodiments, the lift pin stops 1022 are full or partial rings and / or include multiple ring segments. In one or more embodiments, the lift pin stops 1022 include multiple plates (such as disks) circumferentially spaced from one another. All or some of the lift pin stops 1022 may be connected via full or partial rings. The full or partial ring of lift pin stops 1022 may have any regular or irregular shape.

[0083] In the lowered position of the insulating plate lift assembly 1030, the second stops 1004 are lowered toward the bottom window 110 of the processing chamber 1000. The insulating plate lift pins 1034 can rest on the lift pin stops 1022, and the insulating plate 321 rests on the insulating plate lift pins 1034. It is envisioned that the inner surface 1024 can include a ring on which the insulating plate 321 can rest. In one or more embodiments, the ring of the inner surface 1024 can include lift pin holes 1007. In some embodiments, the insulating plate 321 can rest on the ring, and the insulating plate lift pins 1034 can rest in the lift pin holes 1007.

[0084] The insulating plate lift pins 1034 can be raised and lowered (using the insulating plate lift assembly 1030) to raise and lower the insulating plate 321. In the lowered position of the insulating plate 321, the area of ​​the lower portion 136a of the processing region 136 is reduced. The reduced area can increase the rate of P1. Additionally, residual deposition on the inner surface 1024 can be reduced. The amount by which the insulating plate 321 is lowered can depend on the processing region 136, the processing conditions, the desired rate of P1, and / or experimental data.

[0085] 11 is a partial schematic cross-sectional side view of a processing chamber 1000 with an insulating plate lift assembly 1030 in a raised position according to one or more embodiments. In the raised position of the insulating plate lift assembly 1030, the second stop 1004 is raised away from the bottom window 110 of the processing chamber 1000. The insulating plate lift pins 1034 rest on the lift pin stops 1022, and the insulating plate 321 rests on the insulating plate lift pins 1034.

[0086] In one or more embodiments, the substrate 102 can be raised or lowered before or after the movement of the insulating plate 321. The substrate 102 can be raised or lowered via the process described above to adjust the gap between the insulating plate 321 and the substrate 102.

[0087] In the raised position, the area of ​​the lower portion 136a of the processing region 136 increases. The increased area may decrease the velocity of P1. The amount by which the insulating plate 321 is raised may depend on the processing region 136, the processing conditions, the desired velocity of P1, and / or experimental data.

[0088] In one or more embodiments, the substrate support 106 and shaft 118 can be lowered prior to placing the substrate 102 in the processing chamber 1000. The substrate 102 can be placed on the lift pins 132 in the lower portion 136a of the processing region 136 while the lift pins 132 are in the raised position. The lift pins 132 can then be lowered to lower the substrate 102 onto the substrate support 106. After the substrate 102 is placed on the substrate support 106, the insulating plate lift pins 1034 can be lowered to lower the insulating plate 321 to a desired position for processing the substrate 102.

[0089] 10 a certain amount below the lowered position shown in FIG. 10 , the insulating plate 321 may rest on one or more inner ledges of the upper liner 1020, the insulating plate lift pins 1034 may hang from the substrate support 106 and / or preheat ring 302 (as shown for lift pins 132 in FIG. 10 ), and / or the lift pin stops 1022 may disengage from the insulating plate lift pins 1034. From such a disengaged position, the insulating plate lift assembly 1030 may be raised so that the insulating plate lift pins 1034 can rest on the lift pin stops 1022, and when the insulating plate lift pins 1034 engage and raise the insulating plate 321, the insulating plate 321 may rest on the insulating plate lift pins 1034.

[0090] 12 is a partial schematic top view of a processing chamber 1000 having an insulating plate lift assembly 1030 according to one or more embodiments. The lift pins 132 are located within the outer perimeter of the substrate support 106. The insulating plate lift pins 1034 are located within the outer perimeter of the preheat ring 302 (as shown in FIGS. 10 and 11), but outside the outer perimeter of the substrate support 106.

[0091] It is contemplated that the insulating plate lift pins 1034 may be located at substantially the same radial position within the circumference of the substrate support 106 as the lift pins 132 (as shown by the dashed position 1034A). In one or more embodiments, the lift pins 132 may be utilized to lift the insulating plate 321 when the substrate 102 is removed from the processing chamber 1000. In such an embodiment, 1004 may be omitted, and 138 may be rotated (e.g., about 180 degrees) to move from beneath the lift pins 132 and align beneath the insulating plate lift pins 1034 at the dashed position 1034a.

[0092]

[0079] Three lift pins 132 and three insulating plate lift pins 1034 are shown in Figure 12. It is contemplated that more or fewer lift pins 132 and / or insulating plate lift pins 1034 may be utilized.

[0093] 12, the lift pins 132 and the insulating plate lift pins 1034 are shown as solid and not circumferentially aligned. It is contemplated that the lift pins 132 and the insulating plate lift pins 1034 may be circumferentially aligned (when in the dotted line position 1034a). Furthermore, the lift pins 132 and the insulating plate lift pins 1034 are shown in FIG. 12 as being equally spaced from one another. It is contemplated that the lift pins 132 and / or the insulating plate lift pins 1034 may be unevenly spaced from one another.

[0094]

[0081] The subject matter of the present disclosure can be illustrated by the following examples: A processing chamber for use in semiconductor manufacturing, comprising: one or more lift pin stops coupled to one or more arms, the one or more arms having lift pin stops at their distal ends, the one or more lift pin stops configured to move vertically; one or more insulating plate lift pins, the one or more insulating plate lift pins each configured to contact the one or more lift pin stops; and an insulating plate, the one or more insulating plate lift pins configured to contact the insulating plate, and wherein vertical movement of the one or more lift pin stops causes the insulating plate to move vertically.

[0095]

[0082] Advantages of the present disclosure include improved deposition thickness; improved deposition uniformity; reduced coating of chamber components (such as insulating plate 321); tunability of process parameters (such as gas flow rate, temperature, and / or growth rate); reduced cleaning; improved throughput and efficiency; and reduced chamber downtime.

[0096] It is contemplated that one or more aspects disclosed herein may be combined. As an example, one or more aspects, features, components, operations, and / or properties of the processing chamber 1000, the flow guide insert 310, the pivot shaft 570, the adjustment mechanism 500B, the actuator 671, the actuator 771, the insulating plate 821a, the curved insulating plate 821b, the method 900, and / or the insulating plate lift assembly 1030 may be combined. Furthermore, it is contemplated that one or more aspects disclosed herein may include some or all of the advantages described above.

[0097]

[0084] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, as determined by the following claims.

Claims

1. 1. A method of processing a substrate suitable for use in semiconductor manufacturing, comprising: heating a substrate positioned on a substrate support; Height of insulating plate, or The angle of the insulating plate is adjusted so that the insulating plate moves in a non-parallel direction relative to the substrate. moving the insulating plate to adjust one or more of flowing one or more process gases over the substrate to deposit material on the substrate, the flow including directing the one or more process gases through one or more flow passages defined at least in part by a space between the insulating plate and the substrate; A method comprising:

2. The method of claim 1 , wherein moving the insulating plate comprises angling the insulating plate on a pivot shaft, the pivot shaft being coupled to the insulating plate.

3. The method of claim 2 , wherein the pivot shaft is located approximately at a gas entry point of a processing chamber.

4. 3. The method of claim 2, wherein the pivot shaft is located approximately equidistant from a gas entry point and a gas exit point within the processing chamber.

5. The method of claim 4 , wherein the pivot shaft is coupled to an adjustment mechanism, the adjustment mechanism including a top frustum portion and a bottom frustum portion.

6. The method of claim 5 , wherein the bottom frustum is configured such that rotation of the bottom frustum induces angular movement of the insulating plate.

7. The method of claim 1 , wherein moving the insulating plate comprises sliding a distal end of the insulating plate up a ramp.

8. 2. The method of claim 1, wherein moving the insulating plate includes raising or lowering one or more lift pin stops coupled to one or more arms, each of the one or more arms having a lift pin stop at a distal end thereof, and wherein raising or lowering the one or more lift pin stops raises or lowers one or more insulating plate lift pins to raise or lower the insulating plate, the insulating plate resting on the one or more insulating plate lift pins.

9. 1. A method of processing a substrate suitable for use in semiconductor manufacturing, comprising: heating a substrate positioned on a substrate support; moving an insulating plate in a non-parallel direction relative to the substrate, the insulating plate including a first end adjacent a process gas inlet point, the moving of the insulating plate not substantially changing the height of the first end of the insulating plate; flowing one or more process gases over the substrate, the flow including directing the one or more process gases through one or more flow passages defined at least in part by a space between the insulating plate and the substrate; A method comprising:

10. The method of claim 9 , wherein the insulating plate is coupled to a pivot shaft.

11. The method of claim 10 , wherein the pivot shaft is located at the first end of the insulating plate.

12. The method of claim 10 , wherein the pivot shaft is coupled to an adjustment mechanism, the adjustment mechanism including a top frustum portion and a bottom frustum portion, the bottom frustum portion being rotatable.

13. 10. The method of claim 9, wherein moving the insulating plate occurs when the insulating plate moves up a ramp, the ramp being located at the first end of the insulating plate.

14. 1. A flow guide applicable for use in semiconductor manufacturing, comprising: An insulating plate; a mechanical actuator; an adjustment mechanism coupled to the mechanical actuator, the adjustment mechanism configured to induce angular movement of the insulating plate; A flow guide comprising:

15. The flow guide of claim 14 , wherein the adjustment mechanism includes a pivot shaft.

16. 16. The flow guide of claim 15, wherein the pivot shaft is located approximately at a process gas entry point.

17. 16. The flow guide of claim 15, wherein the pivot shaft is located approximately equidistant from a gas entry point and a gas exit point within a processing chamber.

18. The flow guide of claim 17 , wherein the adjustment mechanism includes a top block and a bottom block.

19. 20. The flow guide of claim 18, wherein the bottom block is configured such that rotation of the bottom block induces vertical movement of the insulating plate.

20. 15. The flow guide of claim 14, wherein the adjustment mechanism includes a ramp located at a process gas exit point.

21. 1. A substrate processing chamber comprising: a body at least partially defining an interior region; a substrate support disposed within the interior region; a flow guide as recited in claim 14 positioned above the substrate support in the interior region; an inlet opening configured to allow gas to flow between the substrate support and an insulating plate of the flow guide within the interior region; 1. A substrate processing chamber comprising:

Images