Purge system for ring susceptor for cleaning wafer backside

Abstract

A method and apparatus for processing a substrate usable in semiconductor manufacturing is described. The method includes rotating a first shaft having a first bore, at least a portion of the first shaft disposed within a second shaft. The method further includes flowing a gas through a piping connected to the second bore in the second shaft. The method also includes flowing a gas through the second perforations and the first perforations into an interior of the first shaft. The method further includes flowing a gas from the interior of the first shaft to an underside of a substrate disposed in the processing chamber.

Description

[Technical Field]

[0001] FIELD OF THE INVENTION

[0001] Embodiments described herein generally relate to apparatus and methods for introducing gases into a processing chamber, and related apparatus and methods for introducing cleaning gases to prevent buildup on the backside of a substrate. [Background technology]

[0002]

[0002] Semiconductor substrates are processed for a variety of applications, including the fabrication of integrated devices and microdevices. One substrate processing method involves depositing a material, such as a dielectric or semiconductive material, on the upper surface of the substrate. In a lateral flow chamber, material may be deposited by flowing a process gas parallel to the surface of a substrate positioned on a support, pyrolyzing the process gas, and depositing the gas-derived material on the substrate surface. However, processes such as epitaxial deposition processes can be time-consuming, expensive, and inefficient, with limited capacity and throughput. Furthermore, hardware may require relatively large dimensions and occupy a large footprint within a fabrication facility.

[0003]

[0003] Therefore, there is a need for improved apparatus and methods in semiconductor processing. Summary of the Invention

[0004] SUMMARY OF THE INVENTION

[0004] Embodiments described herein generally relate to an apparatus and method for introducing gases into a processing chamber, and related apparatus and methods for introducing cleaning gases to prevent buildup on the backside of a substrate.

[0005] In at least one embodiment, an apparatus usable in semiconductor manufacturing is provided. The apparatus includes a first shaft having a first perforation. The apparatus further includes a second shaft having a second perforation, with at least a portion of the first shaft disposed inside the second shaft and the first shaft rotatable relative to the second shaft. The apparatus also includes a support frame coupled to an end of the first shaft. The apparatus further includes a cassette disposed above the support frame. The first perforation and the second perforation are configured to allow gas to pass through the first perforation and the second perforation as the first shaft rotates. The first shaft is configured to allow gas to flow through the interior of the first shaft and contact the underside of a substrate disposed on the cassette.

[0006] In another aspect, a substrate processing method usable in semiconductor manufacturing is provided. The method includes rotating a first shaft having a first perforation, at least a portion of the first shaft being disposed within a second shaft. The method further includes flowing a gas through a piping, the piping being coupled to the second perforation in the second shaft. The method also includes flowing the gas through the second perforation and the first perforation into the interior of the first shaft. The method further includes flowing the gas from the interior of the first shaft to an underside of a substrate disposed in a processing chamber.

[0007] In yet another aspect, a substrate processing method usable in semiconductor manufacturing is provided. The method includes heating a substrate positioned above a substrate support. The method further includes flowing one or more process gases over the substrate to form one or more layers on the substrate. The method also includes rotating a first shaft having a first perforation, at least a portion of the first shaft being disposed within a second shaft. The method also includes flowing a cleaning gas through a connection, the connection being coupled to a second perforation in the second shaft. The method also includes flowing the cleaning gas through the second perforation and the first perforation into the interior of the first shaft. The method further includes flowing the cleaning gas from the interior of the first shaft to an underside of a substrate disposed in a processing chamber.

[0008]

[0008] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, can be had by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the present disclosure may admit of other equally effective embodiments, and therefore, the accompanying drawings illustrate only typical embodiments of the present disclosure and should not be considered as limiting the scope of the present disclosure. [Brief explanation of the drawings]

[0009] [Figure 1A] 1 is a schematic cross-sectional side view of a processing apparatus according to one embodiment. [Figure 1B]

[0010] 1B is a schematic cross-sectional side view of the processing apparatus shown in FIG. 1A, according to one embodiment. [Figure 2]

[0011] 1 is a partial schematic cross-sectional side view of a lift assembly according to one embodiment. [Figure 3A]

[0012] 3 is an enlarged schematic partial cross-sectional side view of the lift assembly shown in FIG. 2, according to one embodiment. [Figure 3B] 3 is an enlarged schematic partial cross-sectional side view of the lift assembly shown in FIG. 2, according to one embodiment. [Figure 4A]

[0013] 3 is an enlarged schematic partial cross-sectional side view of the lift assembly shown in FIG. 2, according to one embodiment. [Figure 4B] 3 is an enlarged schematic partial cross-sectional side view of the lift assembly shown in FIG. 2, according to one embodiment. [Figure 5]

[0014] 1 is a flowchart illustrating a method for processing a substrate, according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0010]

[0015] SUMMARY OF THE INVENTION The embodiments described herein generally relate to an apparatus and method for introducing gases into a processing chamber, and related apparatus and methods for introducing cleaning gases to prevent buildup on the backside of a substrate.

[0011]

[0016] An epitaxial deposition process may process a single substrate or multiple substrates at once. Processing a single substrate can inefficiently use operating time or occupy a large footprint in a manufacturing environment. One method for processing multiple substrates uses a stacked substrate configuration. In a stacked substrate configuration, a substrate cassette is positioned inside a processing chamber. The processing chamber has an upper lamp configuration and a lower lamp configuration to promote deposition of process gases onto the substrates. In this stacked configuration, the underside of the substrate is exposed, which promotes heat transfer from the lower lamp configuration. However, exposing the underside of the substrate to process gases can result in deposition on the underside of the bottom substrate. Deposition on the underside of the bottom substrate can prevent the lamps from heating the substrate. Therefore, an improved method is needed to reduce deposition on the underside of the bottom substrate.

[0012]

[0017] Described herein are apparatus and methods for injecting gases into a processing chamber to remove deposition on a bottom substrate. In at least one embodiment, an apparatus and method are provided for injecting one or more cleaning gases directly onto the exposed backside of a substrate positioned on a ring susceptor. The one or more cleaning gases may be flowed through a shaft supporting the substrate (e.g., a cassette shaft or a support shaft) and injected directly onto the backside of the substrate from the top of the support shaft. Injecting one or more cleaning gases directly onto the backside of the substrate from the support shaft prevents or reduces deposition of process gases on the backside of the substrate, thereby improving heating through the backside of the substrate. Furthermore, the proximity of the cleaning gases injected directly from the shaft allows one or more cleaning gases to be delivered to the backside of the substrate at a higher concentration than cleaning gases typically delivered from other areas of the processing chamber.

[0013]

[0018] FIG. 1A is a schematic cross-sectional side view of a processing apparatus 100, according to one embodiment. The processing apparatus 100 includes a lift assembly 200 configured to deliver a cleaning gas to the backside of a substrate. The side heat sources 118a, 118b shown in FIG. 1B are not shown in FIG. 1A for purposes of visual clarity. The processing apparatus 100 includes a processing chamber having a chamber body 130 that defines a processing space 124.

[0014]

[0019] The cassette 1030 is positioned within the processing space 124 and is at least partially supported by a substrate support assembly 119 (e.g., a pedestal assembly). The cassette 1030 is positioned inside the first shield plate 161. The cassette 1030 includes multiple levels for supporting multiple substrates 107 for simultaneous processing, such as epitaxial deposition. In the embodiment shown in FIG. 1A, the cassette 1030 supports four substrates 107. The cassette 1030 can support other numbers of substrates, including, but not limited to, two substrates 107, three substrates 107, six substrates 107, or eight substrates 107. In one or more embodiments, the cassette 1030 supports two substrates 107 or three substrates 107.

[0015]

[0020] The processing apparatus 100 includes an upper window 116 (e.g., a dome) disposed between the lid 104 and the processing space 124. The processing apparatus 100 includes a lower window 115 disposed below the processing space 124. One or more upper heat sources 106 are positioned above the processing space 124 and the upper window 116. The one or more upper heat sources 106 may be radiant heat sources such as lamps (e.g., halogen lamps). The one or more upper heat sources 106 are disposed between the upper window 116 and the lid 104. The upper heat sources 106 are positioned to provide uniform heating of the substrate 107. One or more lower heat sources 138 are positioned below the processing space 124 and the lower window 115. The one or more lower heat sources 138 may be radiant heat sources such as lamps (e.g., halogen lamps). The lower heat sources 138 are disposed between the lower window 115 and the floor 134 of the processing space 124. The lower heat source 138 is positioned to provide uniform heating of the substrate 107 .

[0016]

[0021] It is contemplated in the present disclosure that other heat sources may be used (in addition to or instead of lamps) for the various heat sources described herein, for example, resistive heaters, light emitting diodes (LEDs), and / or lasers.

[0017]

[0022] The upper and lower windows 116, 115 may be transparent to infrared radiation, such as transmitting at least 80% (e.g., at least 95%) of infrared radiation. The upper and lower windows 116, 115 may be made of a quartz material (e.g., clear quartz). In one or more embodiments, the upper window 116 includes an inner window 193 and an outer window support 194. The inner window 193 may be a thin quartz window that partially defines the processing space 124. The outer window 194 supports the inner window 193 and is at least partially disposed within a support groove. In one or more embodiments, the lower window 115 includes an inner window 187 and an outer window support 188. The inner window 187 may be a thin quartz window that partially defines the processing space 124. The outer window support 188 supports the inner window 187.

[0018]

[0023] A substrate support assembly 119 is disposed within the processing space 124. One or more liners 120 are disposed within the processing space 124 and surround the substrate support assembly 119. The one or more liners 120 facilitate shielding the chamber body 130 from processing chemistry within the processing space 124. The chamber body 130 is at least partially disposed between the upper window 116 and the lower window 115. The one or more liners 120 are disposed between the processing space 124 and the chamber body 130.

[0019]

[0024] The processing apparatus 100 includes a plurality of gas injection passages 182 formed in the chamber body 130 and fluidly connected to the processing space 124, and one or more gas exhaust passages 172 (several are shown in FIG. 1A ) formed in the chamber body 130 opposite the plurality of gas injection passages 182. The one or more gas exhaust passages 172 are fluidly connected to the processing space 124. Each of the plurality of gas injection passages 182 and the one or more gas exhaust passages 172 is formed through one or more sidewalls of the chamber body 130 and through one or more liners 120 that line the one or more sidewalls of the chamber body 130.

[0020]

[0025] Each gas inlet passage 182 includes a gas channel 185 formed in the chamber body 130 and one or more gas openings 186 (two or three are shown in FIG. 1A ) formed in one or more liners 120. One or more supply conduit systems are fluidly connected to the gas inlet passages 182. In FIG. 1A , an inner supply conduit system 121 and an outer supply conduit system 122 are fluidly connected to the gas inlet passages 182. The inner supply conduit system 121 includes multiple inner gas boxes 123 attached to the chamber body 130 and fluidly connected to the inner set of gas inlet passages 182. The outer supply conduit system 122 includes multiple outer gas boxes 117 attached to the chamber body 130 and fluidly connected to the outer set of gas inlet passages 182. It is contemplated that various gas supply systems (e.g., supply conduit systems, gas inlet passages, and / or gas boxes different from those shown in FIG. 1A ) may be used.

[0021]

[0026] The processing apparatus 100 includes a flow guide structure 150 positioned within the processing space 124. The flow guide structure 150 divides the processing space into multiple flow levels 153. (Four flow levels are shown in FIG. 1A.) In one or more embodiments, the flow guide structure 150 includes at least three flow levels 153 and multiple flow sections 154. (Two flow sections 154 are shown in FIG. 1A for each flow level 153.) Multiple gas injection passages 182 are positioned as multiple injection levels, with each gas injection passage 182 corresponding to one of the multiple injection levels. Each injection level is aligned with a respective flow level 153. The processing apparatus 100 includes a heat shield structure 1060 positioned within the processing space 124. The heat shield structure 1060 includes a first shield plate 161 and a second shield plate 1062.

[0022]

[0027] The flow guide structure 150 defines a plurality of distribution inlet openings 155 and a plurality of distribution outlet openings 156. The distribution outlet openings 156 are opposite the distribution inlet openings 155. The heat shield structure 1060 defines a plurality of shield inlet openings 165 and a plurality of shield outlet openings 166. The flow guide structure 150 and / or the heat shield structure 1060 may be formed from one or more of quartz (e.g., transparent quartz, such as clear quartz, or opaque quartz, such as black quartz), silicon carbide (SiC), or graphite coated with SiC.

[0023]

[0028] The cassette 1030 is positioned inside the first shield plate 161. The preheat ring 111 is positioned outside the cassette 1030. The preheat ring 111 is coupled to and / or at least partially supported by one or more liners 120. A portion of the flow guide structure 150 may function as a preheat ring for all flow sections 154 of each flow level 153. The preheat ring 111 may be part of the flow guide structure 150, for example, integrated with the flow guide structure 150.

[0024]

[0029] As discussed below, it is contemplated in the present disclosure that the flow guide structure 150 and / or the heat shield structure 1060 may be omitted.

[0025]

[0030] During a process, such as an epitaxial deposition process, one or more process gases P1 are supplied to the process space 124 through the inner supply conduit system 121, the outer supply conduit system 122, and the plurality of gas injection passages 182. The one or more process gases P1 are supplied from one or more gas sources 196 in fluid communication with the plurality of gas injection passages 182. Each of the gas injection passages 182 is configured to direct one or more process gases P1 generally radially inward toward the cassette 1030. Thus, in one or more embodiments, the gas injection passages 182 may be part of a cross-flow gas injector. The flow of the one or more process gases P1 may be divided into multiple flow levels 153.

[0026]

[0031] The processing apparatus 100 includes an exhaust conduit system 190. One or more process gases P1 can be exhausted through exhaust gas openings formed in one or more liners 120, exhaust gas channels formed in the chamber body 130, and then through an exhaust gas box 1091. The one or more process gases P1 can flow from the exhaust gas box 1091 to an optional common exhaust box 1092 and then be conduited using one or more pumping devices 197 (e.g., one or more vacuum pumps).

[0027]

[0032] The one or more process gases P1 may include, for example, a purge gas, a cleaning gas, and / or a deposition gas. The deposition gas may include, for example, one or more reactive gases carried by one or more carrier gases. The one or more reactive gases may include, for example, a silicon- and / or germanium-containing gas (such as silane (SiH), disilane (SiH), dichlorosilane (SiHCl), and / or germane (GeH)), a chlorine-containing etching gas (such as hydrogen chloride (HCl)), and / or a dopant gas (such as phosphine (PH) and / or diborane (BH)). The one or more purge gases may include, for example, one or more of argon (Ar), helium (He), nitrogen (N), hydrogen chloride (HCl), and / or hydrogen (H).

[0028]

[0033] A purge gas P2 supplied from a purge gas source 129 is introduced into the bottom region 105 of the processing space through one or more purge gas inlets 184 formed in the sidewall of the chamber body .

[0029]

[0034] The one or more purge gas inlets 184 are positioned at a height below the gas injection passages 182. When one or more liners 120 are used, a section of the one or more liners 120 may be positioned between the gas injection passages 182 and the one or more purge gas inlets 184. The one or more purge gas inlets 184 are configured to direct the purge gas P2 generally radially inward. The one or more purge gas inlets 184 may also be configured to direct the purge gas P2 upward. During the film formation process, the substrate support assembly 119 is positioned to promote the purge gas P2 to flow along a flow path generally along the backside of the cassette 1030. The purge gas P2 exits the bottom region 105 and is exhausted out of the processing apparatus 100 through one or more purge gas exhaust passages 102 located on the opposite side of the processing space 124 from the one or more purge gas inlets 184.

[0030]

[0035] One or more cleaning gases P3 are supplied from the lift assembly gas source 330 and introduced from the lift assembly 200 to the underside of the cassette 1030. Cleaning gas P3 is shown in detail in Figures 2 and 3A-3B.

[0031]

[0036] The substrate support assembly 119 includes a first support frame 199 and a second support frame 198 disposed at least partially around the first support frame 199. The first support frame 199 includes arms coupled to the cassette 1030 such that the first support frame 199 is raised and lowered, which raises and lowers the cassette 1030. A plurality of lift pins 189 are suspended from the cassette 1030. By lowering the cassette 1030 and / or raising the second support frame 198, the lift pins 189 begin to contact the arms of the second support frame 198. By continuing to lower the cassette 1030 and / or raise the second support frame 198, the lift pins 189 begin to contact the substrates in the cassette 1030, thereby causing the lift pins 189 to lift the substrates in the cassette 1030. The bottom region 105 of the processing apparatus 100 is defined between the floor 134 and the cassette 1030 .

[0032]

[0037] The first shaft 126 of the first support frame 199, the second shaft 125 of the second support frame 198, and the section 151 of the lower window 115 extend through ports formed in the bottom 135 and floor 134 of the chamber body 130. As described below, the shafts 125, 126 are each coupled to one or more respective motors configured to independently lift, lower, and / or rotate the cassette 1030 using the first support frame 199, and to independently lift and lower the lift pins 189 using the second support frame 198. The first support frame 199 includes the first shaft 126 and a plurality of first arms 1021 configured to support the cassette 1030, which includes one or more substrate supports 212. The second support frame 198 includes a second shaft 125 and a plurality of second arms 1022 configured to contact and support the lift pins 189 .

[0033]

[0038] An opening 136 (substrate transfer opening) is formed through one or more sidewalls of the chamber body 130. The opening 136 can be used to transfer substrates 107 to or from the cassette 1030, for example, into and out of the processing space 124. In one or more embodiments, the opening 136 includes a slit valve. In one or more embodiments, the opening 136 can be connected to any suitable valve to allow substrates to pass therethrough. The opening 136 is shown in phantom in FIGS. 1 and 2 for visual clarity.

[0034]

[0039] The processing device 100 includes one or more temperature sensors 191, 192, 195, such as optical pyrometers, to measure the temperature within the processing device 100 (e.g., on the surface of the upper window 116 and / or one or more surfaces of the substrate 107, the heat shield structure 1060, and / or the cassette 1030). The one or more temperature sensors 191, 192 are disposed on the lid 104. The one or more temperature sensors 195 (e.g., lower pyrometers) are disposed on a lower side of the lower window 115. The one or more temperature sensors 195 may be disposed adjacent to and / or on the bottom 135 of the chamber body 130.

[0035]

[0040] In one or more embodiments, the upper temperature sensors 191, 192 are positioned toward the top of the cassette 1030. In one or more embodiments, the side temperature sensor 131 is positioned toward the first shield plate 161 and / or the substrate support 212 of the cassette 1030. In one or more embodiments, the lower temperature sensor 195 is positioned toward the bottom of the cassette 1030.

[0036]

[0041] The processing apparatus 100 includes a controller 1070 configured to control the processing apparatus 100 or its components. For example, the controller 1070 may control the operation of the components of the processing apparatus 100 by directly controlling the components or by controlling a controller associated with the components. During operation, the controller 1070 enables data collection and feedback from each chamber to adjust and control the performance of the processing apparatus 100.

[0037]

[0042] The controller 1070 generally includes a central processing unit (CPU) 1071, memory 1072, and support circuits 1073. The CPU 1071 may be any type of general-purpose processor that can be used in an industrial environment. The memory 1072, or non-transitory computer-readable medium, is accessible by the CPU 1071 and may be one or more of memory such as random access memory (RAM), read-only memory (ROM), a floppy disk, a hard disk, or other form of local or remote digital storage. The support circuits 1073 are coupled to the CPU 1071 and may include cache, clock circuits, an input / output subsystem, power supplies, etc.

[0038]

[0043] The various methods (e.g., method 500) and processes disclosed herein may generally be implemented by CPU 1071, under control of CPU 1071, executing computer instruction code stored, for example, as a software routine, in memory 1072 (or the memory of a particular process chamber). When the computer instruction code is executed by CPU 1071, CPU 1071 controls components of processing apparatus 100 to perform steps according to the various methods and processes described herein. In one embodiment, which can be combined with other embodiments, memory 1072 (a non-transitory computer-readable medium) stores instructions that, when executed, can cause the methods (e.g., method 500) and steps (e.g., steps 510, 520, 530, 540, 550, 560) described herein to be performed. Controller 1070 may be coupled to a heat source, a gas source, and / or a vacuum pump of processing apparatus 100 to perform, for example, multiple steps. Controller 1070 may control lift assembly 200, described below. The controller 1070 may, for example, control the motors 340, 370 described below and perform at least a portion of the method 400.

[0039]

[0044] Figure 1B is a schematic cross-sectional side view of the processing apparatus 100 shown in Figure 1A, according to one embodiment. The cross-sectional view shown in Figure 1B is rotated 55 degrees compared to the cross-sectional view shown in Figure 1A.

[0040]

[0045] The processing apparatus 100 includes one or more side heat sources 118a, 118b (e.g., side lamps, side resistive heaters, side LEDs, and / or side lasers, etc.) positioned outside the processing space 124. The one or more second side heat sources 118b are across the processing space 124, opposite the one or more first side heat sources 118a.

[0041]

[0046] 1B, for purposes of visual clarity, the flow guide structure 150 and the heat shield structure 1060 are not shown. Furthermore, this disclosure contemplates that the flow guide structure 150 and / or the heat shield structure 1060 may be omitted from the processing apparatus 100 shown in FIGS. 1-2. In such an embodiment, one or more process gases P1 flow from the gas injection passages 182 into the outer annulus of the processing space 124, then into openings 216 between and outside the substrate supports 212 (e.g., arc-shaped supports) of the cassette 1030, and then into the gaps between the substrates 107. The one or more process gases P1 are then expelled from the gaps and flow to openings 216 (between and outside the substrate supports) on the exhaust side of the substrates 107, into the outer annulus of the processing space 124, and into one or more gas exhaust passages 172. The present disclosure also contemplates that multiple lines (eg, conduits) within the processing space 124 may connect each of the gas injection passages 182 to each of the inlet openings of the cassette 1030 .

[0042]

[0047] In addition to one or more temperature sensors 191, 192 located above the processing space 124 and above the second shield plate 1062, the processing apparatus 100 may include one or more temperature sensors 131 (e.g., optical pyrometers) that measure temperatures within the processing apparatus 100 (e.g., the surface of the upper window 116 and / or one or more surfaces of the substrate 107, the heat shield structure 1060, the windows 157, and / or the cassette 1030). The windows 157, if used, may be positioned in gaps formed between or within the one or more liners 120. The one or more temperature sensors 131 are side temperature sensors (e.g., side pyrometers) positioned outside the processing space 124, outside the flow guide structure 150, and outside the windows 157. The one or more temperature sensors 131 may be, for example, radially aligned with the windows 157 (shown in FIG. 1B ).

[0043]

[0048] One or more side temperature sensors 131 (e.g., one or more pyrometers) may be used to measure the temperature within the processing space 124 from each side of the processing space 124. The side sensors 131 are arranged in multiple sensor levels (three sensor levels are shown in FIG. 1B). In one or more embodiments, the number of sensor levels is the same as the number of heat source levels. Each side sensor 131 may be arranged horizontally or pointed directly toward the substrates 107 and the substrate supports 212 of each level of the cassette 1030 (e.g., angled downward).

[0044]

[0049] 2 is a partial schematic cross-sectional side view of a lift assembly 200, according to one embodiment. For purposes of visual clarity, hatching for some components has not been shown.

[0045]

[0050] The lift assembly 200 is coupled to the processing device 100. For example, as shown in FIG. 2, the lift assembly 200 is coupled to the first shaft 126, the second shaft 125, and / or the section 151 of the lower window 115.

[0046]

[0051] The lift assembly 200 includes a first motor 240. The first motor 240 is configured to linearly move a second support block 260. A first drive shaft 251 is coupled to the first motor 240, and a second moving block 252 is disposed along the first drive shaft 251. The second moving block 252 is coupled to the second support block 260 and configured to linearly move along the first drive shaft 251. The first motor 240 is configured to rotate the first drive shaft 251 to move the second moving block 252, such that the second support block 260 moves together with the second moving block 252. In one or more embodiments, the first drive shaft 251 is a second lead screw, and a second screw interface is between the second lead screw and the second moving block 252, such that rotation of the first drive shaft 251 causes the second moving block 252 to move linearly along the first drive shaft 251.

[0047]

[0052] The lift assembly 200 includes a support beam 265 and a mounting block 266 coupled to the support beam 265. The first motor 240 is coupled to the mounting block 266.

[0048]

[0053] The support beam 265 is connected to a base block 268, which is connected to a base frame 269. The base frame 269 mounts the lift assembly 200 to a structure. For example, the base frame 269 may be connected to the main frame of a cluster tool.

[0049]

[0054] The lift assembly 200 includes a second motor 270 coupled to the first support block 230. In one or more embodiments, the second motor 270 moves linearly with the linear movement of the first support block 230.

[0050]

[0055] The first support block 230 supports the first shaft 126 of the first support frame 199 such that linear movement of the first support block 230 linearly moves the first support frame 199, raising and lowering it. In one or more embodiments, the first shaft 126 is coupled to the first support block 230 using, for example, fasteners and / or an interference fit of overlapping shoulders. In the embodiment shown in FIG. 2 , the first shaft 126 includes an inner rod 226 a and an outer rod 226 b. Each of the rods 226 a, 226 b can be integrally formed or can include one or more components coupled together. Each of the shafts 125, 126 can be integrally formed or can include one or more components coupled together.

[0051]

[0056] The second support block 260 supports the second shaft 125. Linear movement of the second moving block 252, driven by the first motor 240 which rotates the first drive shaft 251, linearly moves the second support block 260. The first motor 240 is configured to linearly move (e.g., raise and lower) the second moving block 252 and the second support block 260. In one or more embodiments, the second shaft 125 is coupled to the second support block 260 using, for example, fasteners and / or an interference fit of overlapping shoulders.

[0052]

[0057] The second motor 270 is configured to rotate the first shaft 126 of the first support frame 199 using a rotor 271 coupled to the first shaft 126. The rotor 271 and the first shaft 126 are configured to rotate within and relative to the first support block 230. The second motor 270 may rotate the first support frame 199 during a deposition process (such as an epitaxial deposition process).

[0053]

[0058] Each of the motors 240, 270 may include, for example, an electric motor (such as a servo motor). Other motors are also contemplated for each of the motors 240, 270. The first motor 240 may be a rotary motor or a linear motor. The second motor 270 may be a rotary motor.

[0054]

[0059] The lift assembly 200 includes one or more position sensors 289 configured to measure the vertical position of the first support frame 199 and / or the second support frame across a plurality of positions. The plurality of positions may include, for example, a processing position, a transfer position, and an initial rotation position of the first support frame 199. The one or more position sensors 289 are coupled to the controller 220. When the one or more position sensors detect the initial rotation position of the first support frame 199, the controller 220 automatically commands the second motor 270 to begin rotating the first support frame 199 (and the cassette 1030). Because the initial rotation position is vertically between the processing position and the transfer position, the first support frame 199 passes through the initial rotation position while being raised from the transfer position toward the processing position. The plurality of positions may include a home position between the initial rotation position and the transfer position.

[0055]

[0060] The first sealing sleeve 281 is disposed between the first support block 230 and the second support block 260, and the second sealing sleeve 282 is disposed between the second support block 260 and an end flange 283 of the lift assembly 200. The second shaft 125 contacts a shoulder of the support ring 284. A clamp ring 285 connects the support ring 284, the first sealing sleeve 281, and the second sealing sleeve 282 to the second support block 260. The clamp ring 285 can be secured to the second support block 260 using one or more fasteners. Each of the first sealing sleeve 281 and the second sealing sleeve 282 can include a bellows, such as a bellows formed of a metallic or metallized material.

[0056]

[0061] 3A-3B are enlarged views of the box in FIG. 2 showing a partial schematic cross-sectional side view of the lift assembly 200, according to one embodiment.

[0057]

[0062] The first shaft 126 has a perforation 326, and the second shaft 125 has a perforation 325. As the first shaft 126 rotates, the perforation 326 aligns with the perforation 325 in the second shaft 125. A lift assembly gas source 330 is connected to the gas piping 310. With the perforations 325, 326 aligned, gas from the lift assembly gas source 330 travels up the first shaft 126 and into the processing apparatus 100. The gas flows through the first shaft 126 and contacts the underside of the bottom substrate 107. The gas is then exhausted through the gas exhaust passage 172. A diagram of the aligned perforations 325, 326 is shown in FIG. 3A. Because the perforations 325, 326 are aligned, cleaning gas P3 can flow through the first shaft 126 toward the underside of the bottom substrate 107. 3B, rotation of the first shaft 126 causes the perforations 325, 326 to become misaligned. Because the perforations 325, 326 are misaligned, the cleaning gas P3 is blocked by the solid portion of the first shaft 126 and cannot flow toward the underside of the bottom substrate 107.

[0058]

[0063] The perforations 325, 326 align and misalign as the first shaft 126 rotates within the second shaft 125. Different rotational speeds can affect the flow rate of cleaning gas into the processing apparatus 100. It is contemplated that the first shaft 126 can be rotated to a position within the second shaft 125 and held in that position so that a constant flow of cleaning gas can be supplied to the processing apparatus 100. Similarly, it is contemplated that the first shaft 126 can be rotated to a position within the second shaft 125 and held in that position so that no flow of cleaning gas occurs from the lift assembly gas source 330 to the processing apparatus 100.

[0059]

[0064] In Figures 3A-3B, the gas line 310 is connected to the lift assembly 200 through end flange 283. It is envisioned that the gas line 310 may be connected at different locations on the lift assembly 200. In Figures 3A-3B, the gas line 310 is shown entering one side of the lift assembly 200. However, it is envisioned that the gas line 310 may enter multiple locations within the lift assembly 200. In some embodiments, the gas line 310 may be permanent piping or commercially available semi-permanent piping. In some embodiments, the gas line 310 may be flexible to accommodate movement within the lift assembly 200.

[0060]

[0065] The perforations 325, 326 can be any regular or irregular shape. The perforations can be sized small or large based on the desired flow rate and velocity of gas into the processing apparatus 100. In one embodiment, which can be combined with other embodiments, the perforations 325, 326 can range from 2 mm to 6.35 mm.

[0061]

[0066] The perforations 325, 326 are angled, with the angle formed between the perforations 325, 326 and the first and second shafts 125, 126. The angle may be in the range of 0 to 90 degrees, or in the range of 30 to 60 degrees, to direct gases into the processing chamber. In one embodiment, the angle of the perforations 325, 326 is 45 degrees.

[0062]

[0067] Although only two perforations 325 and 326 are shown in Figures 3A-3B, it is envisioned that multiple perforations 325 and 326 may be located along the circumference of the first and second shafts 125 and 126. More perforations 325 and 326 may be used to introduce more gas into the processing apparatus 100. It is also envisioned that the first and second shafts 125 and 126 each have a single perforation 325 and 326. Fewer perforations 325 and 326 may be used to improve the structural integrity of the first and second shafts or to reduce the amount of gas introduced into the processing apparatus 100. The multiple perforations 325 and 326 may be regularly or irregularly spaced around the circumference of the first and second shafts 125 and 126. In one embodiment, the plurality of perforations 325, 326 includes four perforations 325 located along the circumference of the first shaft 126 and four perforations 326 located along the circumference of the second shaft 125. It is further envisioned that the plurality of perforations 325, 326 may be located vertically along the first and second shafts 125, 126. The plurality of vertical perforations 325, 326 may be used to accommodate linear movement in the first shaft 126.

[0063]

[0068] 2 and 3A-3B, the first shaft 126 is shown as being completely hollow. However, it is envisioned that the first shaft 126 may be partially hollow and partially solid, as shown, for example, in FIGS. 4A-4B. In one embodiment, the portion of the first shaft 126 below the second perforations 326 is solid, and the portion of the first shaft 126 above the second perforations 326 is hollow.

[0064]

[0069] The lift assembly gas source 330 supplies a cleaning gas. The cleaning gas may include an etching gas, a purge gas, or a combination of an etching gas and a purge gas. The lift assembly gas source 330 is configured to supply a cleaning gas to the gas line 310 connected to the perforations 325. The cleaning gas may include an etching gas, a purge gas, or a combination of an etching gas and a purge gas. The etching gas may be HCl or Cl2. The purge gas may include one or more of argon (Ar), helium (He), nitrogen (N2), hydrogen chloride (HCl), and / or hydrogen (H2).

[0065]

[0070] Figures 4A-4B are enlarged, schematic, partial cross-sectional side views of the lift assembly 200 shown in Figure 2, according to one embodiment. Aspects of the lift assembly 200 shown in Figures 4A-4B can be combined with aspects of the lift assembly 200 shown in Figures 3A-3B.

[0066]

[0071] 4A-4B, first shaft 126 is mostly solid except for perforations 326 and a hollow central portion 126a that leads upward into processing device 100. Perforations 326 extend through the solid portion of first shaft 126 and into hollow central portion 126a. In FIGS. 4A-4B, hollow central portion 126a has its lowest point aligned with perforations 326. It is envisioned that hollow central portion 126a may extend below perforations 326.

[0067]

[0072] It is envisioned that the diameter of hollow central portion 126a may be larger or smaller than that shown in FIG. 4A.

[0068]

[0073] A diagram of aligned perforations 325, 326 is shown in Figure 4A. Because perforations 325, 326 are aligned, cleaning gas P3 is able to flow through first shaft 126 toward processing device 100. Further, rotation of first shaft 126 causes perforations 325, 326 to become misaligned, as shown in Figure 4B. Because perforations 325, 326 are misaligned, cleaning gas P3 is blocked by the solid portion of first shaft 126 and cannot flow toward processing device 100.

[0069]

[0074] 5 is a flow chart illustrating a method 500 of processing substrates, according to one embodiment. The method 500 can be performed using the processing apparatus 100.

[0070]

[0075] Step 510 includes heating a substrate in a cassette located on a substrate support (e.g., cassette 1030 located on substrate support assembly 119). Step 510 may occur before, simultaneously with, or after steps 520, 530, 540, 550, and / or 560.

[0071]

[0076] Step 520 includes flowing one or more process gases over a substrate (e.g., substrate 107) in a cassette to form one or more layers on the substrate. Step 520 can occur before, simultaneously with, or after steps 510, 530, 540, 550, and / or 560. In one embodiment, which can be combined with other embodiments, one or more process gases are supplied to a process space (e.g., process space 124) at a pressure of 300 Torr or greater (e.g., in the range of 300 Torr to 600 Torr). In one embodiment, which can be combined with other embodiments, one or more process gases are supplied at a flow rate of less than 5,000 standard cubic centimeters per minute (SCCM). In one embodiment, which can be combined with other embodiments, the substrate is rotated at a rotational speed of less than 8 revolutions per minute (RPM) while the one or more process gases are flowed over the substrate. In one example, which can be combined with other examples, the rotational speed is 1 RPM.

[0072]

[0077] Step 530 includes exhausting one or more process gases through an exhaust outlet formed at least partially in the sidewall, such as exhaust conduit system 190. Step 530 can occur before, simultaneously with, or after steps 510, 520, 540, 550, and / or 560.

[0073]

[0078] Step 540 includes flowing one or more cleaning gases through a process gas inlet. Step 540 may occur before, simultaneously with, or after steps 510, 520, 530, 550, and / or 560. The one or more cleaning gases may include an etchant gas, a purge gas, or a mixture of both.

[0074]

[0079] Step 550 includes flowing one or more cleaning gases through a lift assembly (e.g., lift assembly 200). Step 550 can occur before, simultaneously with, or after steps 510, 520, 530, 540, and / or 560. The one or more cleaning gases can include a cleaning gas, a purge gas, or a mixture of both. The one or more cleaning gases are introduced into the lift assembly and delivered to the underside of the bottom substrate through a first shaft. Rotation of the first shaft aligns the perforations in the first and second shafts, allowing the cleaning gases to flow into the processing chamber. Flowing one or more cleaning gases through the lift assembly in step 550 and flowing one or more cleaning gases through the process gas inlet in step 540 can occur simultaneously, with periodic rotation, overlapping, or sequentially, with either step 540 or 550 occurring first. Additionally, flowing one or more cleaning gases through the lift assembly in step 550 and flowing one or more processing gases over the substrate can occur simultaneously, in a cyclical rotation, overlapping, or sequentially, with either step 530 or 550 occurring first.

[0075]

[0080] Step 560 includes venting one or more cleaning gases through an exhaust passageway. Step 560 may occur before, simultaneously with, or after steps 510, 520, 530, 540, and / or 550. Step 560 may be a continuous process or an intermittent process. Cleaning gases may be introduced in steps 540 and 550 but vented in step 560. In other embodiments, steps 540 and 550 may occur for a period of time before venting cleaning gases begins in step 560. In other embodiments, steps 540 and 550 may occur and be completed before starting step 560.

[0076]

[0081] While the above description is directed to embodiments of the present disclosure, other and additional embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. An apparatus usable in semiconductor manufacturing, comprising: a first shaft having a first bore; a second shaft having a second bore, wherein at least a portion of the first shaft is disposed inside the second shaft and the first shaft is rotatable relative to the second shaft; a support frame coupled to an end of the first shaft; and a cassette disposed above the support frame, the first perforations and the second perforations configured to allow gas to pass through the first perforations and the second perforations as the first shaft rotates, the first shaft configured to allow the gas to flow through an interior of the first shaft to contact an underside of a substrate disposed on the cassette; 1. An apparatus comprising:

2. 2. The apparatus of claim 1, wherein the first perforations are a first plurality of perforations and the second perforations are a second plurality of perforations, and wherein at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the gas to enter the interior of the first shaft.

3. 2. The device of claim 1, wherein the first perforations are at a first angle relative to a surface of the first shaft and the second perforations are at a second angle relative to a surface of the second shaft, the first angle and the second angle being between 0° and 90°.

4. The apparatus of claim 1 further comprising a connection between the second perforation and a gas source.

5. 5. The apparatus of claim 4, wherein the connection is a permanent or semi-permanent pipe.

6. 1. A method for processing a substrate usable in semiconductor manufacturing, comprising: rotating a first shaft having a first bore, at least a portion of the first shaft being disposed within a second shaft; flowing a gas through a piping, the piping being connected to a second bore in the second shaft; flowing the gas through the second perforation and the first perforation into the interior of the first shaft; and flowing the gas from the interior of the first shaft to an underside of a substrate disposed in a processing chamber; A method comprising:

7. The method of claim 6 , wherein the substrate is disposed on a cassette.

8. 7. The method of claim 6, wherein the first perforations are a first plurality of perforations and the second perforations are a second plurality of perforations, and at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the gas to enter the interior of the first shaft.

9. The method of claim 6 , wherein the gas is a cleaning gas, a purge gas, or a combination thereof.

10. The method of claim 6 further comprising flowing a second gas through the process gas inlet.

11. The method of claim 10 , wherein the second gas is a cleaning gas.

12. 12. The method of claim 11, wherein flowing the second gas occurs after flowing the gas through the interior of the first shaft and onto the underside of the substrate is completed.

13. The method of claim 6 further comprising venting the gas through an exhaust outlet.

14. 1. A method for processing a substrate usable in semiconductor manufacturing, comprising: heating a substrate located on top of a substrate support; flowing one or more process gases over the substrate to form one or more layers on the substrate; rotating a first shaft having a first bore, at least a portion of the first shaft being disposed within a second shaft; flowing a flushing gas through a connection, the connection being connected to a second bore in the second shaft; flowing the cleaning gas through the second bore and the first bore into the interior of the first shaft; and flowing the cleaning gas from the interior of the first shaft to beneath a substrate disposed in a processing chamber; A method comprising:

15. The method of claim 14 , wherein the substrate is placed on a cassette, and the cassette is placed on the substrate support.

16. 15. The method of claim 14, wherein the first perforations are a first plurality of perforations and the second perforations are a second plurality of perforations, and at least one of the first plurality of perforations and at least one of the second plurality of perforations are configured to allow the cleaning gas to enter the interior of the first shaft.

17. 15. The method of claim 14, wherein the cleaning gas is an etchant gas, a purge gas, or a combination thereof.

18. 15. The method of claim 14, wherein at least a portion of the flowing of the one or more process gases is completed before flowing the cleaning gas through the connection.

19. 15. The method of claim 14, wherein flowing the one or more process gases is completed before flowing the cleaning gas through the connection.

20. The method of claim 14 further comprising exhausting the cleaning gas through an exhaust outlet.

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