Translucent mirror
A semi-transparent mirror with a coating stack of alternating dielectric layers addresses reflectance and transmittance issues, achieving desirable optical properties for dual functionality.
Patent Information
- Application Number
- JP2025544723
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-02-12
- Filing Date
- 2024-02-14
- Publication Date
- 2026-02-05
AI Technical Summary
Mirrors with dielectric layers often fail to achieve desirable reflectance and transmittance characteristics, leading to aesthetic and functional issues, and there is a need for a mirror that can function as both a reflective and electronic device.
A semi-transparent mirror is developed with a coating stack comprising alternating high and low refractive index dielectric layers of specific thicknesses, including ZnSnO, TiO2, and SiAlO, to achieve optimal reflectance and transmittance properties.
The coating stack provides a mirror with reflectance of at least 50% and transmittance in the visible light spectrum, offering both aesthetic appeal and functional versatility.
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Figure 2026504412000001_ABST
Abstract
Description
[Technical Field]
[0001] (CROSS-REFERENCE TO RELATED APPLICATIONS) This application claims priority to U.S. Patent Application No. 18 / 439,238, filed February 12, 2024, which claims the benefit of U.S. Provisional Application No. 63 / 445,387, filed February 14, 2023, the disclosures of which are incorporated by reference in their entireties.
[0002] (Technical field) The present invention generally relates to semi-transparent mirrors having multiple dielectric layers and methods for making the same. [Background technology]
[0003] (Technical Considerations) In the field of transparent coatings, it is known to apply coatings to mirrors. Such coatings are sometimes applied to mirrors for protective purposes. However, other coatings (such as dielectric coatings) may also be applied to mirrors. Mirrors with dielectric layers may have electrical properties. The application of such layers may alter the reflectance and transmittance of light in visible wavelengths, which may result in the mirror failing to fulfill its intended purpose of providing accurate reflection and may result in aesthetically unpleasing results. It may be desirable to apply a dielectric layer to a mirror so that the mirror can be used simultaneously as a mirror and an electronic device. Summary of the Invention
[0004]
[0006] Accordingly, it is an object of the present disclosure to provide a semi-transparent mirror having desirable reflectance and transmittance characteristics. In one aspect of the present invention, a coated article includes a substrate. A first dielectric layer is disposed on at least a portion of the substrate. The first dielectric layer comprises ZnSnO or TiO2. A second dielectric layer is disposed on at least a portion of the first dielectric layer. The second dielectric layer comprises SiAlO. A third dielectric layer is disposed on at least a portion of the second dielectric layer. The third dielectric layer comprises ZnSnO or TiO2. A fourth dielectric layer is disposed on at least a portion of the third dielectric layer. The fourth dielectric layer comprises ZnSnO or TiO2. A protective layer is disposed on at least a portion of the fourth dielectric layer. The protective layer comprises ZnSnO or TiO22.
[0005] In one broad aspect of the present invention, the first dielectric layer and the third dielectric layer comprise ZnSnO. The first dielectric layer has a thickness in the range of 80 nm to 161 nm. The second dielectric layer has a thickness in the range of 26 nm to 138 nm. The third dielectric layer has a thickness in the range of 37 nm to 112 nm. The fourth dielectric layer has a thickness in the range of 67 nm to 101 nm. The protective layer has a thickness in the range of 3 nm to 61 nm. The coating stack further includes a fifth dielectric layer. The fifth dielectric layer has a thickness in the range of 30 nm to 60 nm. The second dielectric layer has a thickness in the range of less than half the thickness of the fourth dielectric layer. The fourth dielectric layer has a thickness in the range of greater than the thickness of the second dielectric layer.
[0006] In one broad aspect of the invention, the coated article has a light reflectance of at least 50% in the visible light spectrum. The coated article has a light reflectance in the range of 50% to 70%. The coated article has a color reflectance with an L* value in the range of 70 to 90. The coated article has a color transmittance with an L* value in the range of 60 to 70. A fifth dielectric layer is disposed on at least a portion of the fourth dielectric layer. The fifth dielectric layer comprises ZnSnO. The fifth dielectric layer comprises TiO2. The coated article further includes a second protective layer on at least a portion of the protective layer. The second protective layer comprises zirconium oxide. The second protective layer has a thickness in the range of greater than 0 nm to 10 nm.
[0007] In another aspect, the present invention is a method for producing a coated article. The method includes providing a substrate. A first dielectric layer is applied over at least a portion of the substrate to a thickness ranging from 80 nm to 161 nm. The first dielectric layer comprises a first high refractive index material. A second dielectric layer is applied over at least a portion of the first dielectric layer to a thickness ranging from 26 nm to 138 nm. The second dielectric layer comprises a first low refractive index material. A third dielectric layer is applied over at least a portion of the second dielectric layer to a thickness ranging from 37 nm to 112 nm. The third dielectric layer comprises a second high refractive index material. A fourth dielectric layer is applied over at least a portion of the third dielectric layer to a thickness ranging from 67 nm to 101 nm. The fourth dielectric layer comprises a second low refractive index material. A protective layer is applied over at least a portion of the fourth dielectric layer to a thickness ranging from 3 nm to 61 nm. The first and third dielectric layers comprise metal oxides. The metal oxide is ZnSnO or TiO x The second and fourth dielectric layers comprise SiAlO. The fifth dielectric layer is applied at a thickness in the range of 30 nm to 60 nm.
[0008] The present invention will be described with reference to the following drawings, in which like reference numerals identify like parts throughout. [Brief explanation of the drawings]
[0009] [Figure 1] FIG. 1 is a side view (not to scale) of an exemplary coating stack according to a non-limiting embodiment of the present invention.
[0010] [Figure 2] FIG. 2 is a side view (not to scale) of an exemplary coating stack according to a non-limiting embodiment of the present invention.
[0011] [Figure 3] FIG. 3 is a side view (not to scale) of an exemplary coating stack according to a non-limiting embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION
[0012] As used herein, spatial or directional terms such as "left," "right," "inside," "outside," "top," and "bottom" refer to the present invention as depicted in the drawings. However, it should be understood that the present invention can assume various alternative orientations, and therefore, such terms should not be considered limiting. Furthermore, as used herein, all numbers expressing dimensions, physical properties, processing parameters, quantities of ingredients, reaction conditions, and the like, used in the specification and claims, should be understood to be modified in each instance by the term "about." Accordingly, unless indicated to the contrary, the numerical values set forth in the following specification and claims may vary depending on the desired properties sought to be obtained by the present invention. At the very least, and not as an attempt to limit the application of the doctrine of equivalents to the scope of the claims, each numerical value should be construed at least in light of the number of reported significant digits and by applying ordinary rounding techniques. Furthermore, all ranges disclosed herein should be understood to encompass the beginning and ending values of the range, as well as any and all subranges subsumed therein. For example, a stated range of "1 to 10" should be considered to include any and all subranges between (and including) a minimum value of 1 and a maximum value of 10, i.e., all subranges beginning with a minimum value of 1 or greater and ending with a maximum value of 10 or less, e.g., 1 to 3.3, 4.7 to 7.5, 5.5 to 10, etc. Furthermore, as used herein, the terms "formed over," "deposited over," or "provided over" mean formed, deposited, or provided on a surface, but not necessarily in contact with the surface. For example, a coating layer "formed over" a substrate does not exclude the presence of one or more other coating layers or films of the same or different composition located between the formed coating layer and the substrate. As used herein, the terms "polymer" or "polymeric" include oligomers, homopolymers, copolymers, and terpolymers, e.g., polymers formed from two or more types of monomers or polymers.The terms "visible region" or "visible light" refer to electromagnetic radiation having wavelengths ranging from 380 nm to 800 nm. The terms "infrared region" or "infrared radiation" refer to electromagnetic radiation having wavelengths ranging from greater than 800 nm to 100,000 nm. The terms "ultraviolet region" or "ultraviolet radiation" refer to electromagnetic energy having wavelengths ranging from 300 nm to less than 380 nm. Furthermore, all documents referenced herein, including, but not limited to, issued patents and patent applications, are deemed "incorporated by reference" in their entirety. As used herein, the term "film" refers to a coating region of a desired or selected coating composition. A "layer" can include one or more "films," and a "coating" or "coating stack" can include one or more "layers."
[0013] 1, according to a non-limiting embodiment, a coating stack 100 is provided. The coating stack 100 may include one or more dielectric layers that may be applied to a mirror.
[0014] According to non-limiting embodiments, the coating stack 100 may be applied to a substrate. The substrate may include a plastic substrate (e.g., an acrylic polymer such as polyacrylate; a polyalkyl methacrylate such as polymethyl methacrylate, polyethyl methacrylate, polypropyl methacrylate; a polyalkyl terephthalate such as polyurethane, polycarbonate, polyethylene terephthalate (PET), polypropylene terephthalate, polybutylene terephthalate; a polysiloxane-containing polymer; or a copolymer of any monomer for preparing the same, or any mixture thereof); a ceramic substrate; a glass substrate; or a mixture or combination of any of the above. For example, the substrate may include conventional soda-lime silicate glass, borosilicate glass, or leaded glass. The glass may be clear glass. By "clear glass" is meant non-tinted or uncolored glass. Alternatively, the glass may be tinted or otherwise colored glass. The glass may be annealed or heat-treated glass. As used herein, the term "heat treated" means tempered or at least partially tempered. The glass can be of any type, such as conventional float glass, and of any composition with any optical properties, such as visible light transmittance, ultraviolet light transmittance, infrared light transmittance, and / or total solar energy transmittance. "Float glass" means glass formed by the conventional float process in which molten glass is deposited onto a molten metal bath and controllably cooled to form a float glass ribbon. Examples of float glass processes are disclosed in U.S. Pat. Nos. 4,466,562 and 4,671,155.
[0015] The coating stack 100 may include a first dielectric layer 102 deposited on at least a portion of the surface of the substrate. The first dielectric layer 102 may be a single film or may include multiple films. The first dielectric layer 102 may be deposited by any conventional method, such as, but not limited to, chemical vapor deposition (CVD) and / or any physical vapor deposition (PVD) method. Examples of CVD processes include spray pyrolysis. Examples of PVD processes include electron beam evaporation and vacuum sputtering (such as magnetron sputter deposition (MSVD)). Other coating methods may also be used, such as, but not limited to, sol-gel deposition. In one non-limiting embodiment, the first dielectric layer 102 may be deposited by MSVD. Examples of MSVD coating apparatus and methods are well understood by those skilled in the art and are described, for example, in U.S. Pat. No. 4,379,040, U.S. Pat. No. 4,861,669, U.S. Pat. No. 4,898,789, U.S. Pat. No. 4,898,790, U.S. Pat. No. 4,900,633, U.S. Pat. No. 4,920,006, U.S. Pat. No. 4,938,857, U.S. Pat. No. 5,328,768, and U.S. Pat. No. 5,492,750.
[0016] The first dielectric layer 102 (single film or multiple film layers) can have a thickness in the range of 80 nm to 161 nm, e.g., 90 nm to 150 nm, e.g., 94 nm to 140 nm. The first dielectric layer 102 may comprise a metal. The metal may be an oxide or nitride. The metal may include any metal that provides a high refractive index. High refractive index metal oxides or metal nitrides have a refractive index of at least 1.8, e.g., at least 1.9, e.g., at least 2.0, e.g., at least 2.1. These metals include titanium, indium, zirconium, cerium, antimony, zinc, tin, and mixtures thereof. Thus, the first dielectric layer 102 may comprise an oxide or nitride of a metal selected from the group consisting of titanium, zirconium, zinc, cerium, antimony, indium, tin, and mixtures thereof. The metal may be a metal alloy or mixture of metals, such as zinc and tin. The metal oxide or nitride may be zinc stannate (defined below), silicon nitride, aluminum silicon nitride, zinc tin oxide, zinc oxide, tin oxide, titanium oxide, or aluminum nitride. The first dielectric layer 102 may be a substantially single-phase film, such as a metal alloy oxide film such as zinc stannate, or may be a mixture of phases composed of zinc and tin oxides, or may be composed of multiple films. "Zinc stannate" refers to Zn x Sn 1-x O 2-x (Formula 1), where "x" varies from greater than 0 to less than 1. For example, "x" can be any fraction or decimal greater than 0 and less than 1. For example, when x=2 / 3, Formula 1 represents Zn 2 / 3 Sn 1 / 3 O 4 / 3, which is more commonly written as "Zn2SnO4." Zinc stannate-containing films have one or more of the forms of Formula 1 present in a predominant amount in the film. The first dielectric layer 102 may include titanium oxide, which is defined as a compound containing both titanium and oxygen. The titanium oxide may include, for example, titanium oxide, titanium aluminum oxide, titanium oxynitride, titanium aluminum oxynitride, or mixtures thereof. The titanium oxide may include titanium metal oxides, such as titanium aluminum oxide. In one embodiment, the first dielectric layer 102 includes zinc stannate. In another embodiment, the first dielectric layer 102 includes titanium oxide.
[0017] The second dielectric layer 104 can be disposed on the first dielectric layer 102. For example, the second dielectric layer 104 can be deposited on at least a portion of the first dielectric layer 102 by any method, such as those described above. The second dielectric layer 104 can include one or more metals deposited as oxides or nitrides. The second dielectric layer 104 (single film or multiple film layers) can have a thickness in the range of 26 nm to 138 nm, e.g., 28 nm to 127 nm, e.g., 31 nm to 120 nm. The second dielectric layer 104 has a refractive index lower than that of the first dielectric layer. For example, the second dielectric layer can have a refractive index of 1.8 or less, e.g., 1.75 or less. The metal for the second dielectric layer can include silicon, aluminum, or a mixture thereof. The metal can also be a metal alloy containing silicon and aluminum. For example, the metal alloy may contain 70 to 90% by weight of silicon, e.g., 75 to 90% by weight of silicon, e.g., 80 to 90% by weight of silicon, e.g., about 85% by weight of silicon, and 10 to 30% by weight of aluminum, e.g., 10 to 25% by weight of aluminum, e.g., 10 to 20% by weight of aluminum, e.g., about 15% by weight of aluminum. The metal alloy may be an oxide containing silicon and aluminum as described above.
[0018] The third dielectric layer 106 can be disposed on the second dielectric layer 104. The third dielectric layer 106 has a high refractive index, as described above with respect to the first dielectric layer 102. For example, the third dielectric layer 106 can be deposited on at least a portion of the second dielectric layer 104 by any method, such as those described above. The third dielectric layer 106 (single film or multiple film layers) can have a thickness in the range of 37 nm to 112 nm, e.g., 40 nm to 105 nm, e.g., 44 nm to 97 nm.
[0019] The fourth dielectric layer 108 can be disposed on the third dielectric layer 106. The fourth dielectric layer 108 has a low refractive index, as described above with respect to the second dielectric layer 104. For example, the fourth dielectric layer 108 can be deposited on at least a portion of the third dielectric layer 106 by any method, such as those described above. The fourth dielectric layer 108 can include one or more metal oxide or metal alloy oxide-containing films, as described above with respect to the second dielectric layer 104. The fourth dielectric layer 108 (single film or multiple film layers) can have a thickness in the range of 67 nm to 101 nm, e.g., 73 nm to 94 nm, e.g., 79 nm to 88 nm.
[0020] A protective layer 110 can be disposed on the fourth dielectric layer 108. The protective layer 110 can have a high or low refractive index, as described above with respect to the first dielectric layer 102 and the second dielectric layer 104. For example, the protective layer 110 can be deposited on at least a portion of the fourth dielectric layer 108 by any method, such as those described above. The protective layer 110 (single film or multiple film layers) can have a thickness in the range of 3 nm to 61 nm, e.g., 4 nm to 57 nm, e.g., 5 nm to 53 nm. The protective layer 110 can include at least one of Si3N4, SiAlN, SiAlON, TiO2, TiAlO, silica, zirconia, or a combination thereof.
[0021] Referring to FIG. 2 , according to another non-limiting embodiment, the coating stack 100 can further include a fifth dielectric layer 112, as described above with respect to FIG. 1 . The fifth dielectric layer 112 can have a high refractive index, as described above with respect to the first dielectric layer 102. For example, the fifth dielectric layer 112 can be deposited on at least a portion of the fourth dielectric layer 108 and between the fourth dielectric layer 108 and the protective layer 110. The fifth dielectric layer 112 can include one or more metal oxide or metal alloy oxide-containing films, as described above with respect to the first dielectric layer 102. The fifth dielectric layer 112 can be a protective layer. The fifth dielectric layer 112 can have any desired thickness, such as, for example, 30 nm to 60 nm, for example, 35 nm to 55 nm, or 40 nm to 50 nm.
[0022] 3, according to another non-limiting embodiment, the coating stack 100 can further include a second protective layer 114, as described with respect to FIGS. 1 and 2. The second protective layer 114 has a high refractive index, as described above with respect to the first dielectric layer 102. For example, the second protective layer 114 can be deposited on at least a portion of the protective layer 110 by any method, such as those described above. The second protective layer 114 can include one or more metal oxide or metal alloy oxide-containing films, as described above with respect to the protective layer 110. The second protective layer 114 can have any desired thickness, such as, for example, greater than 0 nm to 10 nm, for example, greater than 1.5 nm to 8 nm, or greater than 3 nm to 5 nm.
[0023] 1-3 , according to a non-limiting embodiment, the second dielectric layer 104 may have a thickness less than the fourth dielectric layer 108. For example, the second dielectric layer 104 may be less than 75% of the thickness of the fourth dielectric layer 108, or may be less than half the thickness of the fourth dielectric layer 108. Alternatively, the fourth dielectric layer 108 may have a thickness less than the thickness of the second dielectric layer 104. For example, the fourth dielectric layer 108 may have a thickness less than 75% of the thickness of the second dielectric layer 104, or less than 70% of the thickness of the second dielectric layer, or less than 65% of the thickness of the second dielectric layer, or less than 60% of the thickness of the second dielectric layer, or less than 55% of the thickness of the second dielectric layer, or less than 50% of the thickness of the second dielectric layer.
[0024] According to non-limiting embodiments, the coating stack 100 can have a light reflectance of at least 50%, e.g., 50% to 100%, 50% to 80%, 50% to 70%, 55% to 65%, or 57% to 61%. The coated article can have a variety of color reflectance properties. For example, the coating stack 100 can have a color reflectance with an L* value in the range of 65 to 95, e.g., 70 to 90. The coating stack 100 can have a color reflectance with an a* value in the range of -3 to 5, e.g., -2.5 to 3.5. The coating stack 100 can have a color reflectance with a b* value in the range of 0 to 10, e.g., 2 to 10. The coating stack 100 can have a color transmittance with an L* value in the range of 60 to 70. The coating stack 100 can have a color transmittance with an a* value in the range of -3.0 to 2.5. The coating stack 100 may have a color transmittance with a b* value ranging from -4.0 to -2.0.
[0025] Other non-limiting embodiments or aspects are described in the following numbered clauses.
[0026] Clause 1: A coated article comprising: a substrate; a first dielectric layer on at least a portion of the substrate, the first dielectric layer comprising a material selected from the group including ZnSnO or TiO; a second dielectric layer on at least a portion of the first dielectric layer, the second dielectric layer comprising SiAlO; a third dielectric layer on at least a portion of the second dielectric layer, the third dielectric layer comprising a material selected from the group including ZnSnO or TiO; a fourth dielectric layer on at least a portion of the third dielectric layer, the fourth dielectric layer comprising SiAlO; and a protective layer on at least a portion of the fourth dielectric layer, the protective layer comprising a material selected from the group including ZnSnO or TiO.
[0027] Clause 2: The coated article of clause 1, wherein the first layer and the third layer comprise ZnSnO.
[0028] Clause 3: The coated article of clause 1, wherein the first layer and the third layer comprise TiO2.
[0029] Clause 4: The coated article of clause 1, wherein the first dielectric layer has a thickness in the range of 80 nm to 161 nm, preferably 90 nm to 150 nm, more preferably 94 nm to 140 nm.
[0030] Clause 5: The coated article of clause 1, wherein the second dielectric layer has a thickness in the range of 26 nm to 138 nm, preferably 28 nm to 127 nm, more preferably 31 nm to 120 nm.
[0031] Clause 6: The coated article of clause 1, wherein the third dielectric layer has a thickness in the range of 37 nm to 112 nm, preferably 40 nm to 105 nm, more preferably 44 nm to 97 nm.
[0032] Clause 7: The coated article of clause 1, wherein the fourth dielectric layer has a thickness in the range of 67 nm to 101 nm, preferably 73 nm to 94 nm, more preferably 79 nm to 88 nm.
[0033] Clause 8: The coated article of clause 1, wherein the protective layer has a thickness in the range of 3 nm to 61 nm, preferably 4 nm to 57 nm, more preferably 5 nm to 53 nm.
[0034] Clause 9: The coated article of clause 1, wherein the coating stack further comprises a fifth dielectric layer, the fifth dielectric layer having a thickness in the range of 30 nm to 60 nm, for example, 35 nm to 55 nm, for example, 40 nm to 50 nm.
[0035] Clause 10: The coated article of clause 1, wherein the thickness of the second dielectric layer is in the range of less than half the thickness of the fourth dielectric layer.
[0036] Clause 11: The coated article of clause 1, wherein the thickness of the fourth dielectric layer is in a range greater than the thickness of the second dielectric layer.
[0037] Clause 12: The coated article of clause 1, wherein the coated article has a light reflectance of at least 50% in the visible light spectrum.
[0038] Clause 13: The coated article of clause 1, wherein the coated article has a light reflectance in the range of 50% to 70%.
[0039] Clause 14: The coated article of clause 1, wherein the coated article has a color reflectance of an L* value in the range of 70 to 90.
[0040] Clause 15: The coated article of clause 1, wherein the coated article has a color transmission of an L* value in the range of 60 to 70.
[0041] Clause 16: The coated article of clause 1, wherein a fifth dielectric layer is disposed over at least a portion of the fourth dielectric layer.
[0042] Clause 17: The coated article of clause 1, wherein the fifth dielectric layer comprises ZnSnO or TiO2.
[0043] Clause 18: The coated article of clause 1, further comprising a second protective layer over at least a portion of the protective layer.
[0044] Clause 19: The coated article of clause 1, wherein the second protective layer comprises zirconium oxide.
[0045] Clause 20: The coated article of clause 1, wherein the second protective layer has a thickness in the range of greater than 0 nm to 10 nm, preferably greater than 1.5 nm to 8 nm, and more preferably greater than 3 nm to 5 nm.
[0046] Clause 21: A method for fabricating a semiconductor device comprising the steps of: providing a substrate; applying a first dielectric layer on at least a portion of the substrate having a thickness in the range of 80 nm to 161 nm, preferably 90 nm to 150 nm, more preferably 94 nm to 140 nm, wherein the first dielectric layer comprises a first high refractive index material; applying a second dielectric layer on at least a portion of the first dielectric layer having a thickness in the range of 26 nm to 138 nm, preferably 28 nm to 127 nm, more preferably 31 nm to 120 nm, wherein the second dielectric layer comprises a first low refractive index material; and applying a second dielectric layer on at least a portion of the second dielectric layer having a thickness in the range of 37 nm to 112 nm, preferably 40 nm to 105 nm. applying a third dielectric layer having a thickness in the range of 67 nm to 101 nm, preferably 73 nm to 94 nm, more preferably 79 nm to 88 nm, over at least a portion of the third dielectric layer, wherein the fourth dielectric layer has a thickness in the range of 67 nm to 101 nm, preferably 73 nm to 94 nm, more preferably 79 nm to 88 nm, over at least a portion of the third dielectric layer, wherein the fourth dielectric layer comprises a second low refractive index material; and applying a protective layer having a thickness in the range of 3 nm to 61 nm, preferably 4 nm to 57 nm, more preferably 5 nm to 53 nm, over at least a portion of the fourth dielectric layer.
[0047] Clause 22: The method of clause 21, wherein the first dielectric layer and the third dielectric layer comprise a metal oxide.
[0048] Clause 23: The metal oxide is ZnSnO or TiO x 23. The method of clause 22, wherein the compound is selected from the group comprising:
[0049] Clause 24. The method of clause 21, wherein the second dielectric layer and the fourth dielectric layer comprise SiAlO.
[0050] Clause 25: The method of clause 21, further comprising applying a fifth dielectric layer having a thickness in the range of 30 nm to 60 nm, such as 35 nm to 55 nm, for example 40 nm to 50 nm. [Example]
[0051] [Example 1]
[0052] The coating stacks shown in Table 1 were prepared by conventional MSVD methods, and the optical properties are shown in Tables 5 to 7 below.
[0053] [Table 1]
[0054] [Example 2]
[0055] The coating stacks shown in Table 2 were prepared by conventional MSVD methods, and the optical properties are shown in Tables 5 to 7 below.
[0056] [Table 2]
[0057] [Example 3]
[0058] The coating stacks shown in Table 3 were prepared by conventional MSVD methods, and the optical properties are shown in Tables 5 to 7 below.
[0059] [Table 3]
[0060] [Example 4]
[0061] The coating stacks shown in Table 4 were prepared by conventional MSVD methods, and the optical properties are shown in Tables 7-9 below.
[0062] [Table 4]
[0063] [Example 5]
[0064] The coating stack shown in Table 5 was prepared by conventional MSVD methods.
[0065] [Table 5]
[0066] [Example 6]
[0067] The coating stack shown in Table 6 was prepared by conventional MSVD methods.
[0068] [Table 6]
[0069] [Table 7]
[0070] [Table 8]
[0071] [Table 9]
[0072] Those skilled in the art will readily appreciate that modifications may be made to the present invention without departing from the concepts disclosed in the foregoing description. Accordingly, the particular embodiments described in detail herein are merely illustrative and do not limit the scope of the invention, which is intended to encompass the full scope of the appended claims and any and all equivalents thereof.
Claims
1. A substrate; a first dielectric layer on at least a portion of the substrate, the first dielectric layer being ZnSnO or TiO 2 a first dielectric layer comprising: a second dielectric layer on at least a portion of the first dielectric layer, the second dielectric layer comprising SiAlO; and a third dielectric layer on at least a portion of the second dielectric layer, the third dielectric layer being ZnSnO or TiO 2 a third dielectric layer comprising: a fourth dielectric layer on at least a portion of the third dielectric layer, the fourth dielectric layer comprising SiAlO; and a protective layer on at least a portion of the fourth dielectric layer, the protective layer comprising ZnSnO or TiO 2 a protective layer comprising:
1. A coated article comprising:
2. The coated article of claim 1 , wherein the first and third dielectric layers comprise ZnSnO.
3. The coated article of claim 1 or 2, wherein the first dielectric layer has a thickness in the range of 80 nm to 161 nm.
4. The coated article of any one of claims 1 to 3, wherein the second dielectric layer has a thickness in the range of 26 nm to 138 nm.
5. The coated article of any one of claims 1 to 4, wherein the third dielectric layer has a thickness in the range of 37 nm to 112 nm.
6. The coated article of any one of claims 1 to 5, wherein the fourth dielectric layer has a thickness in the range of 67 nm to 101 nm.
7. The coated article of any one of claims 1 to 6, wherein the protective layer has a thickness in the range of 3 nm to 61 nm.
8. The coated article of any one of claims 1 to 7, wherein the coating stack further comprises a fifth dielectric layer, the fifth dielectric layer having a thickness in the range of 30 nm to 60 nm.
9. The coated article of any one of claims 1 to 8, wherein the thickness of the second dielectric layer is in the range of less than half the thickness of the fourth dielectric layer.
10. The coated article of any one of claims 1 to 9, wherein the thickness of the fourth dielectric layer is in a range greater than the thickness of the second dielectric layer.
11. The coated article of any one of claims 1 to 10, wherein the coated article has a light reflectance in the range of 50% to 70%.
12. The coated article of any one of claims 1 to 11, wherein the coated article has a color reflectance L* value in the range of 70 to 90.
13. The coated article of any one of claims 1 to 11, wherein the coated article has a color transmission L* value in the range of 60 to 70.
14. The fifth dielectric layer is ZnSnO or TiO 2 The coated article of claim 8 comprising:
15. providing a substrate; applying a first dielectric layer over at least a portion of the substrate, the first dielectric layer having a thickness in the range of 80 nm to 161 nm, the first dielectric layer comprising a first high refractive index material; applying a second dielectric layer having a thickness in the range of 26 nm to 138 nm over at least a portion of the first dielectric layer, the second dielectric layer comprising a first low refractive index material; applying a third dielectric layer over at least a portion of the second dielectric layer, the third dielectric layer having a thickness in the range of 37 nm to 112 nm, the third dielectric layer comprising a second high refractive index material; applying a fourth dielectric layer having a thickness in the range of 67 nm to 101 nm over at least a portion of the third dielectric layer, the fourth dielectric layer comprising a second low refractive index material; applying a protective layer over at least a portion of the fourth dielectric layer, the protective layer having a thickness in the range of 3 nm to 61 nm; 1. A method for producing a coated article, comprising: