Epitaxial growth equipment

Abstract

The epitaxial growth apparatus (100) includes a heating element (10) and a reactor (11) including a plurality of heating bases (201) stacked in a stacking direction, with a reaction chamber (202) provided between any two adjacent heating bases (201), at least one of the heating bases (201) including a thermal suppression section (2012a) and a heat storage section (2012b), the thickness of the thermal suppression section (2012a) being thinner than the thickness of the heat storage section (2012b), the thermal suppression section (2012a) forming a thermal suppression area when projected orthogonally onto a plane perpendicular to the stacking direction, and the heat storage section (2012b) forming a side region when projected orthogonally onto a plane perpendicular to the stacking direction, the thermal suppression area and the side region being arranged in a horizontal direction, the horizontal direction being perpendicular to the stacking direction and the axial direction of the reactor.

Description

[Technical Field]

[0001] This application claims priority to Chinese Patent Application No. 202410171604.6, entitled "Epitaxial Growth Apparatus," filed on February 6, 2024, the entire contents of which are incorporated herein by reference.

[0002] This application relates to the field of semiconductor growth, and more particularly to epitaxial growth apparatus. [Background technology]

[0003] Epitaxial growth is a technique for growing epitaxial films on substrates. A commonly used epitaxial growth process is chemical vapor deposition (CVD), which involves injecting reactant gases or vapors into an epitaxial growth apparatus. The epitaxial growth apparatus has a reaction chamber for receiving trays. The reactant gases or vapors undergo chemical reactions in the reaction chamber and are subsequently deposited on the surface of the substrates on the trays to form a single epitaxial film. The internal temperature of the reaction chamber directly affects the deposition rate. If the internal temperature of the reaction chamber is not uniform or if the temperature difference between different regions of the reaction chamber is too large, it is likely to result in poor thickness uniformity of the epitaxial film and poor deposition quality. Summary of the Invention

[0004] In view of this, the present application provides an epitaxial growth apparatus.

[0005] The epitaxial growth apparatus provided in the present application comprises a reactor having a plurality of heating bases stacked in a stacking direction to form a stack, and a heating element arranged around the reactor, wherein at least one heating base has a thermal suppression portion and a heat storage portion, the thickness of the thermal suppression portion being thinner than the thickness of the heat storage portion, the thermal suppression portion having a thermal suppression area formed by orthogonal projection onto a figure of a plane perpendicular to the stacking direction, and the heat storage portion having a side region formed by orthogonal projection onto a figure of a plane perpendicular to the same stacking direction, the thermal suppression area and the side region being arranged in a horizontal direction, the horizontal direction being perpendicular to the stacking direction and the axial direction of the reactor.

[0006] In one embodiment, at least one heating base is provided with a uniform heat groove, and the thermal suppression portion and the uniform heat groove are arranged in corresponding order in the stacking direction, and the portion of the heating base not provided with the uniform heat groove forms a heat storage portion.

[0007] In one embodiment, the heating base includes an upper heating base at the top of the stack and a bottom heating base at the bottom of the stack, the upper heating base having a first heating wall and a first radiant wall arranged in the stacking direction, with a first reaction chamber and a first radiant wall respectively provided on both sides of the first heating wall, the bottom heating base having a second heating wall and a second radiant wall arranged in the stacking direction, with a second reaction chamber and a second radiant wall respectively provided on both sides of the second heating wall, and the uniform heat groove includes a first uniform heat groove provided in at least one of the first heating wall and the first radiant wall, and / or the uniform heat groove includes a second uniform heat groove provided in at least one of the second heating wall and the second radiant wall.

[0008] In one embodiment, the top and bottom heating bases are symmetrical about a bisecting cross section, the bisecting cross section being parallel to the transverse direction and parallel to the axial direction of the reactants and containing the axes of the reactants.

[0009] In one embodiment, the uniform heat groove includes a first uniform heat groove disposed in the first radiating wall, the first uniform heat groove penetrating at least one side of the first radiating wall.

[0010] In one embodiment, the uniform heat groove includes a second uniform heat groove disposed in the second radiating wall, the second uniform heat groove penetrating at least one side of the second radiating wall.

[0011] In one embodiment, the uniform heat groove includes a first uniform heat groove provided in the first radiation wall, where the first uniform heat groove does not penetrate both sides of the first radiation wall, and / or the uniform heat groove includes a second uniform heat groove provided in the second radiation wall, where the second uniform heat groove does not penetrate both sides of the second radiation wall.

[0012] In one embodiment, at least one of the top heating base and the bottom heating base is provided with a uniform heat groove, the uniform heat groove being cut by a bisecting longitudinal section, the bisecting longitudinal section being parallel to the stacking direction and parallel to the axial direction of the reactants and including the axis of the reactants.

[0013] In one embodiment, the uniform heat groove includes a first uniform heat groove provided in the upper heating base, the thermal suppression portion includes a first thermal suppression portion formed in the upper heating base, and the thermal storage portion includes two first thermal storage portions formed in the upper heating base, and the first thermal suppression portion is located between the two first thermal storage portions and is provided in sequence corresponding to the first uniform heat groove along the stacking direction.

[0014] In one embodiment, the uniform heat groove includes a second uniform heat groove provided in the bottom heating base, the thermal suppression portion includes a second thermal suppression portion formed in the bottom heating base, the thermal storage portion includes two second thermal storage portions formed in the bottom heating base, and the second thermal suppression portion is located between the two second thermal storage portions and is arranged in sequence corresponding to the second uniform heat groove along the stacking direction.

[0015] In one embodiment, the uniform heat grooves are distributed along the axial direction of the reactants, the uniform heat grooves extend continuously in the axial direction of the reactants, and / or the heating base includes an upper heating base at the top of the stack, the uniform heat grooves include a first uniform heat groove provided in the upper heating base, and the first uniform heat groove does not penetrate both ends of the upper heating base.

[0016] In one embodiment, the heating base includes a bottom heating base at the bottom of the stack, and the uniform heat groove includes a second uniform heat groove provided in the bottom heating base, and the second uniform heat groove does not penetrate both ends of the bottom heating base.

[0017] In one embodiment, the heating base includes an upper heating base, a bottom heating base, and at least one intermediate heating base between the upper heating base and the bottom heating base, and the at least one intermediate heating base is provided with a uniform heat groove.

[0018] In one embodiment, the uniform heat grooves do not penetrate both sides of the intermediate heating base, and / or the uniform heat grooves extend axially through the reactants and penetrate at least one end of both ends of the intermediate heating base.

[0019] In one embodiment, the uniform heat groove extends axially through the reactor and through both ends of the intermediate heating base.

[0020] In one embodiment, the number of uniform heat grooves is plural, and the plural uniform heat grooves are disposed in sequence on the intermediate heating base in the lateral direction.

[0021] In one embodiment, the epitaxial growth apparatus further comprises a thermal insulation material, the thermal insulation material comprising an intermediate thermal felt, the intermediate thermal felt being disposed in the uniform heat groove disposed in the intermediate heating base.

[0022] In one embodiment, the material of the middle heating base has a resistivity greater than at least one of the resistivity of the material of the top heating base and the resistivity of the material of the bottom heating base.

[0023] In one embodiment, the material of the middle heating base has a thermal conductivity greater than at least one of the thermal conductivity of the material of the top heating base and the thermal conductivity of the material of the bottom heating base.

[0024] In one embodiment, the stacking direction is perpendicular to the axial direction of the reactants.

[0025] The details of one or more embodiments of the present application are set forth in the drawings and description below. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. [Brief explanation of the drawings]

[0026] [Figure 1] FIG. 1 is a first cross-sectional view of an epitaxial growth apparatus according to an embodiment of the present invention, taken along a plane perpendicular to the axial direction of the reactor. [Figure 2] FIG. 2 is a cross-sectional view of an epitaxial growth apparatus according to an embodiment of the present invention, cut along a plane parallel to the axial direction of the reactor. [Figure 3] FIG. 3 is a cross-sectional view of a reactor according to one embodiment of the present invention, cut along a plane perpendicular to the reactor axis. [Figure 4] FIG. 4 is a cross-sectional view of the upper and lower heating bases of one embodiment of the present invention, cut along a plane perpendicular to the reactor axial direction. [Figure 5] FIG. 5 is a cross-sectional view of an intermediate heating base according to one embodiment of the present invention, cut along a plane perpendicular to the axial direction of the reactor body. [Figure 6] FIG. 6 is a second cross-sectional view of the epitaxial growth apparatus according to one embodiment of the present invention, taken along a plane perpendicular to the reactor axial direction. [Figure 7] FIG. 7 is a cross-sectional view of an epitaxial growth apparatus according to an embodiment of the present invention, cut along a plane perpendicular to the axial direction of the reactor. [Figure 8] FIG. 8 is a schematic diagram showing a partial structure of an epitaxial growth apparatus according to one embodiment of the present invention. [Figure 9] FIG. 9 is a schematic diagram showing a partial structure of an epitaxial growth apparatus according to one embodiment of the present invention. [Figure 10] FIG. 10 is a schematic diagram of the temperature distribution after heating of the reactants in an epitaxial growth apparatus of the related art. [Figure 11] FIG. 11 is a schematic diagram of the temperature distribution of the reactants after heating in one embodiment of the present application. [Figure 12] FIG. 12 is a schematic diagram of the temperature distribution of the reactants after heating in one embodiment of the present application. DETAILED DESCRIPTION OF THE INVENTION

[0027] Hereinafter, the technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, but obviously, the described examples are only some of the embodiments of the present application, not all of the embodiments, and all other embodiments obtained by those skilled in the art based on the embodiments of the present application without any creative work fall within the scope of protection of the present application.

[0028] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing particular embodiments only and are not intended to be limiting of the present application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0029] The present application provides an epitaxial growth apparatus 100 for producing a semiconductor epitaxial film by chemical vapor deposition. The epitaxial growth apparatus 100 includes a reactor, and a reaction chamber is provided inside the reactor. The process of producing a semiconductor epitaxial film by chemical vapor deposition includes the following steps: i. A step of injecting gas or vapor used as a reaction raw material (hereinafter referred to as a gaseous reaction raw material) into a reaction chamber of the epitaxial growth apparatus 100; ii. heating the reactants in the epitaxial growth apparatus 100 to increase the temperature within the reaction chamber; iii. The gaseous reactant undergoes a chemical reaction in the reaction chamber, and is finally deposited on a substrate in the reaction chamber to obtain a deposition product, and the deposition product is an epitaxial film.

[0030] 1 to 2 and 7, the epitaxial growth apparatus 100 of the present application comprises a heating element 10 and a reactant 20, the heating element 10 is disposed around the reactant 20 and is used to heat the reactant 20 to increase the temperature of the reaction chamber, the reactant 20 includes at least two heating bases 201 stacked in a predetermined stacking direction to form a stack, and a reaction chamber 202 is disposed between at least two adjacent heating bases 201, and the reaction chamber 202 is used to accommodate gaseous reactant materials and a substrate on which an epitaxial film is deposited and attached, and serves as a reaction site for the gaseous reactant materials.

[0031] In some embodiments, the reaction chamber 202 can accommodate a tray for supporting the substrate, and the tray can rotate relative to the heated base 201 during the chemical reaction process of the gaseous reactant.

[0032] In some embodiments, the heating element 10 is an induction coil 11, and when the induction coil 11 is energized, the reactants 20 generate induction heat due to the electromagnetic induction effect of the induction coil 11, i.e., the induction coil 11 heats the reactants 20 through electromagnetic induction, thereby increasing the temperature in the reaction chamber 202.

[0033] In other embodiments, the heating element 10 is not limited to the induction coil 11, and other heat source elements may be used as the heating element 10.

[0034] In some embodiments, the reactant 20 has a columnar structure, the heating element 10 is a spiral induction coil 11 fitted around the reactant 20, the stacking direction of the multiple heating bases 201 is perpendicular to the axial direction of the reactant 20, each heating base 201 extends in the axial direction of the reactant 20, and after cutting the epitaxial growth apparatus 100 in a vertical cross section perpendicular to the axial direction of the reactant 20, the reaction chamber 202 and the multiple heating bases 201 are arranged in a radial direction of the reactant 20.

[0035] In the plane Cartesian coordinate system shown in FIG. 2, the Y-axis extension direction represents the stacking direction in which multiple heating bases 201 are stacked to form a stack, and the Z-axis extension direction represents the axial direction of the reactant 20. In the plane Cartesian coordinate system shown in FIG. 3, the Y-axis extension direction represents the stacking direction in which multiple heating bases 201 are stacked to form a stack, and the X-axis extension direction represents the lateral direction, and the axial direction of the reactant 20 is perpendicular to the plane defined by the Y-axis and the X-axis, and the lateral direction is perpendicular to the axial direction of the reactant 20. The lateral direction will be described in detail below.

[0036] As can be seen from FIGS. 2 and 3, the reactants 20 and the plurality of heating bases 201 are alternately arranged in the Y-axis direction of the plane orthogonal coordinate system shown in FIGS.

[0037] In some embodiments not shown, the induction coil 11 may have other shapes, for example, the induction coil 11 may extend spirally in a plane, the induction coil 11 does not need to surround the reactant 20, and the number of induction coils 11 may be multiple, for example, the reactant 20 may be sandwiched between two induction coils 11 or surrounded by three or more induction coils 11.

[0038] In the examples shown in Figures 1-3 and 7, the reactants 20 have a cylindrical structure, while in some embodiments not shown, the reactants 20 may have a prismatic structure.

[0039] The present application does not limit the number of reaction chambers 202, and in one embodiment, in some embodiments, there are multiple reaction chambers 202, and any two adjacent heating bases 201 among the multiple heating bases 201 are spaced apart, and there is a reaction chamber 202 between any two adjacent heating bases 201. Each of the multiple reaction chambers 202 can simultaneously accommodate multiple substrates, so that multiple epitaxial films can be simultaneously obtained in one reaction process.

[0040] In some embodiments, the heating base 201 includes an upper heating base 21 at the top of the stack, a heating base 22 at the bottom of the stack, and an intermediate heating base 23 between the upper heating base 21 and the bottom heating base 22, and the reaction chamber 202 includes at least a first reaction chamber 2021 between the upper heating base 21 and the intermediate heating base 23 and a second reaction chamber 2022 between the bottom heating base 22 and the intermediate heating base 23. During the chemical reaction process of the gaseous reactant raw material, the upper heating base 21 is vertically higher than the bottom heating base 22, and the upper heating base 21, the intermediate heating base 23, and the bottom heating base 22 are successively closer to the ground.

[0041] The number of intermediate heating bases 23 may be one or more, and in the embodiments shown in Figures 1 to 3 and 6 to 7, the number of intermediate heating bases 23 is one. When the number of intermediate heating bases 23 is more than one, two adjacent intermediate heating bases 23 may also be spaced apart to form a reaction chamber 202, and in this case, the number of reaction chambers 202 in the reaction body 20 is three or more.

[0042] As can be appreciated, in other embodiments, only one reaction chamber 202 may be formed within the reactor 20, in which case the heating base 201 includes only an upper heating base 21 and a lower heating base 22, and the reaction chamber 202 is formed between the upper heating base 21 and the lower heating base 22.

[0043] In one embodiment, referring to Figures 1 and 7, the epitaxial growth apparatus 100 further includes a bracket 30, which is provided between two heating bases 201 adjacent to each other in the stacking direction, and which is used to limit the distance between the two spaced apart heating bases 201 and thereby limit and maintain the height of the reaction chamber 202 in the stacking direction.

[0044] In some embodiments, the epitaxial growth apparatus 100 further comprises a thermal insulation material 40, at least a portion of which fits or covers the reactants 20 to prevent a temperature drop in the reaction chamber 202 due to heat loss from the reactants 20. Referring to Figures 1 and 3, the thermal insulation material 40 comprises an upper thermal felt 41 on the side of the upper heating base 21 away from the bottom heating base 22, and a bottom thermal felt 42 on the side of the bottom heating base 22 away from the upper heating base 21, and further comprises thermal end caps 44 on both ends of the reactants 20. The upper thermal felt 41 and the bottom thermal felt 42 surround each other to form a hollow thermal cylinder fitted around the outer periphery of the reactants 20, and the thermal end caps 44 close the openings at both ends of the hollow thermal cylinder.

[0045] The reactor 20 is provided at both ends with an inlet and an outlet (not shown), respectively. The inlet is connected to the reaction chamber 202 so that gaseous reactant materials can be injected into the reaction chamber 202, and the outlet is connected to the reaction chamber 202 so that excess or remaining gaseous reactant materials can be discharged from the reaction chamber 202.

[0046] Temperature uniformity within a reaction chamber has a significant impact on the quality and thickness of epitaxial films. Uneven temperatures in different areas of the reaction chamber result in uneven reaction rates in different areas of the reaction chamber, poor thickness uniformity in epitaxial films, and inconsistent quality. To improve temperature uniformity within the reaction chamber, the industry currently generally addresses the issue of temperature unevenness by modifying the temperature distribution of the heating element. Specific measures include adjusting the heating power of the heating element, adjusting the relative position between the heating element and the reactants, adjusting the number of turns of the induction coil, adjusting the diameter of the spiral structure of the induction coil, and / or adjusting the coil density. The concentration distribution of gaseous reactant materials within the reaction chamber may also be changed, for example, by locally increasing the concentration of the gaseous reactant materials to increase the local thickness of the epitaxial film.

[0047] The epitaxial growth apparatus 100 of the present application is based on a completely new control concept, which overcomes the adverse effects of temperature unevenness in the reaction chamber and improves the quality and thickness uniformity of the epitaxial film. In the epitaxial growth apparatus 100 of the present application, at least one heating base 201 has a thermal suppression portion 2012a and a heat storage portion 2012b, and the thickness of the thermal suppression portion 2012a is thinner than that of the heat storage portion 2012b. The relative positions of the thermal suppression portion 2012a and the heat storage portion 2012b are set so that when the thermal suppression portion 2012a is orthogonally projected onto a vertical plane in the stacking direction to form a thermal suppression area, and when the heat storage portion 2012b is orthogonally projected onto a vertical plane in the same stacking direction to form a side region, the thermal suppression area and the side region are arranged horizontally.

[0048] Here, the plane perpendicular to the stacking direction is any plane perpendicular to the stacking direction, and the plane is parallel to the axial direction and also parallel to the lateral direction of the reactants 20. The lateral direction is perpendicular to both the stacking direction of the heating base 201 and the axial direction of the reactants 20. With reference to Fig. 3, the lateral direction is represented by the X-axis extension direction of the planar Cartesian coordinate system in Fig. 3. With reference to Figs. 2 to 3 together, the plane defined by the X-axis and Z-axis corresponds to a plane perpendicular to one stacking direction.

[0049] Referring to Figures 4 and 5, Figure 4 shows a cross section of the upper heating base 21 and the bottom heating base 22 remaining after removing the intermediate heating base 23 in the reactor 20 shown in Figure 3, and Figure 5 shows a cross section of the intermediate heating base 23 remaining after removing the upper heating base 21 and the bottom heating base 22 in the reactor 20 shown in Figure 3.

[0050] 4 as an example, the upper heating base 21 is cut into two parallel longitudinal sections, which are parallel to the stacking direction and the axial direction of the reactants 20 and perpendicular to the horizontal direction. After being cut into the two longitudinal sections, the upper heating base 21 is divided into three sections, which are arranged in sequence in the horizontal direction. The middle section is the thermal suppression section 2012a of the upper heating base 21, which is abbreviated as the first thermal suppression section, and the left and right sections are the two thermal storage sections 2012b of the upper heating base 21, which are abbreviated as the first thermal storage section. The thickness of the first thermal suppression section is thinner than that of the first thermal storage section, and the thickness of the first thermal suppression section is the sum of the physical thicknesses of the middle section of the upper heating base 21 in the stacking direction, and the thickness of the first thermal storage section is the sum of the physical thicknesses of the both side sections of the upper heating base 21 in the stacking direction.

[0051] 4 as an example, the bottom heating base 22 is cut into two parallel longitudinal sections, which are parallel to the stacking direction and the axial direction of the reactants 20 and perpendicular to the horizontal direction. After being cut into the two longitudinal sections, the bottom heating base 22 is divided into three sections, which are arranged in sequence in the horizontal direction. The middle section is the thermal suppression section 2012a of the bottom heating base 22, which is abbreviated as the second thermal suppression section, and the left and right sections are the two thermal storage sections 2012b of the bottom heating base 22, which are abbreviated as the second thermal storage section. The thickness of the second thermal suppression section is thinner than that of the second thermal storage section, and the thickness of the second thermal suppression section is the sum of the physical thicknesses of the middle section of the bottom heating base 22 in the stacking direction, and the thickness of the second thermal storage section is the sum of the physical thicknesses of the both side sections of the bottom heating base 22 in the stacking direction.

[0052] 5 as an example, the intermediate heating base 23 is cut into ten parallel longitudinal sections, which are parallel to the stacking direction and the axial direction of the reactants 20 and perpendicular to the horizontal direction. After the intermediate heating base 23 is cut into these longitudinal sections, six thin segments and five thick segments are formed, which are alternately arranged in the horizontal direction. The six thin segments are the thermal suppression section 2012a of the intermediate heating base 23, which is abbreviated as the third thermal suppression section, and the five thick segments are the thermal storage section 2012b of the intermediate heating base 23, which is abbreviated as the third thermal storage section. The thickness of the third thermal suppression section is thinner than that of the third thermal storage section, and the thickness of the third thermal suppression section is the sum of the physical thicknesses of the thin segments in the stacking direction, and the thickness of the third thermal storage section is the sum of the physical thicknesses of the thick segments in the stacking direction.

[0053] Furthermore, with regard to the upper heating base 21 and the bottom heating base 22, the number and distribution of the thermal suppression portions 2012a are not limited to those shown in Figures 3 and 4, and the number and distribution of the thermal storage portions 2012b are also not limited to those shown in Figures 3 and 4. The number of the thermal suppression portions 2012a may be two or more, and the number of the thermal storage portions 2012b may be one or three or more. With regard to the intermediate heating base 23, the number and distribution of the thick segments are not limited to those shown in Figures 3 and 4, and the number and distribution of the thin segments are also not limited to those shown in Figures 3 and 4. Regardless of the upper heating base 21, the bottom heating base 22, and the intermediate heating base 23, the thermal suppression portions 2012a and the thermal storage portions 2012b are arranged horizontally, and when projected onto a plane vertical to the stacking direction, they form a thermal suppression area and a side area arranged in sequence horizontally.

[0054] Specifically, at least one heating base 201 is provided with a uniform heat groove 2013, and the heating base 201 forms a thermal suppression portion 2012a and a thermal storage portion 2012b by providing the uniform heat groove 2013. The uniform heat groove 2013 is provided, that is, material is removed from one or more of the heating bases 201 to reduce the thickness of the heating base 201, and the thinner portion of the heating base 201 is the thermal suppression portion 2012a, while the portion of the heating base 201 where no material is removed and the thinner portion is the thermal storage portion 2012b.

[0055] Due to the thinner wall thickness, the thermal suppression portion 2012a has less substance and occupies less space, which reduces the upper limit of heat that can be accumulated in the thermal suppression portion 2012a. As a result, the heat radiated from the thermal suppression portion 2012a to the reaction chamber 202 and the tray is reduced, which prevents the reaction chamber 202 from overheating due to localized excessive heat absorption and improves the heating uniformity of the reaction chamber 202. The uniform heating groove 2013 reduces the physical volume of the heating base 201 provided with the uniform heating groove 2013, which improves the thermal conductivity of the heating base 201. This allows the heating base 201 to heat up to a desired temperature more quickly, and achieves uniform temperature distribution at different locations on the heating base 201 in a shorter time.

[0056] 4, the upper heating base 21 is provided with a heat uniforming groove 2013 (abbreviated as the first heat uniforming groove 213), and the middle portion of the upper heating base 21, where the upper heating base 21 is cut into two vertical sections, and the first heat uniforming groove 213 are arranged in order in the stacking direction, and are located in the spacer region between the two vertical sections. Correspondingly, the left and right side portions of the upper heating base 21 where the heat uniforming groove 2013 is not provided form a first heat storage section, and the two vertical sections respectively pass through and are tangent to the two opposing sides of the first heat uniforming groove 213 along the horizontal direction.

[0057] 4, the bottom heating base 22 is provided with a heat uniformity groove 2013 (abbreviated as the second heat uniformity groove 223), and the middle section of the bottom heating base 22, which is cut into two longitudinal sections, and the second heat uniformity groove 223 are arranged in order in the stacking direction, and are located in the spacer region between the two longitudinal sections. Correspondingly, the left and right sides of the bottom heating base 22 where the heat uniformity groove 2013 is not provided form a second heat storage section, and the two longitudinal sections respectively pass through and are tangent to the two opposite sides of the second heat uniformity groove 223 along the horizontal direction.

[0058] 5, the intermediate heating base 23 is provided with a plurality of heat-uniformity grooves 2013 (each referred to as a third heat-uniformity groove 231). The thin segments of the intermediate heating base 23 are cut along several longitudinal sections, and the third heat-uniformity grooves 231 correspond to each other. The corresponding thin segments and the third heat-uniformity grooves 231 of any given set are arranged in order in the stacking direction and are located within the spacer region between two longitudinal sections. The thick segments of the intermediate heating base 23 that do not have the heat-uniformity grooves 2013 form a third heat storage section. Any one third heat-uniformity groove 231 is sandwiched between two of the longitudinal sections, and the horizontal directions of the third heat-uniformity grooves 231 pass through and are tangent to two opposite sides of the third heat-uniformity groove 231.

[0059] It should be noted that the provision of uniform heat grooves 2013 on all of the upper heating base 21, the lower heating base 22 and the middle heating base 23 is merely one embodiment of the design of the present application, and the present application does not require that all heating bases 201 be provided with uniform heat grooves 2013. More specifically, the present application does not require that each heating base 201 be separated into a thermal suppression section 2012a and a thermal storage section 2012b by installing a uniform heat groove 2013 or other means, but it is sufficient that at least one heating base 201 forms a thermal suppression section 2012a and a thermal storage section 2012b arranged laterally by installing a uniform heat groove 2013 or other means.

[0060] The effect of changing the temperature distribution and optimizing the reaction rate by providing uniform heat grooves 2013 in different heating bases 201 will be explained in detail later.

[0061] In some embodiments, at least one heating base 201 comprises a heating wall 2011 and a radiant wall 2012 arranged in sequence in the stacking direction, the heating wall 2011 being adjacent to and spaced apart from the other heating base 201 to form one reaction chamber 202 between one side of the heating wall 2011 and the other heating base 201, the radiant wall 2012 being connected to the heating wall 2011 and located on the other side of the heating wall 2011, the radiant wall 2012 being located on the side of the heating wall 2011 relatively closer to the heating element 10 and used to form the outer peripheral wall of the reactant 20.

[0062] In the embodiment shown in Figures 1, 2, 3 and 7, the upper heating base 21 has a first heating wall 211 and a first radiant wall 212 arranged in sequence in the stacking direction, the first heating wall 211 is located on a side of the first radiant wall 212 relatively closer to the bottom heating base 22, the first radiant wall 212 is used to form the outer peripheral wall of the reactant 20 and is closer to the heating element 10 than the first heating wall 211, the bottom heating base 22 has a second heating wall 221 and a second radiant wall 222 arranged in sequence in the stacking direction, the second heating wall 221 is located on a side of the second radiant wall 222 relatively closer to the upper heating base 21, and the second radiant wall 222 is used to form the outer peripheral wall of the reactant 20 and is closer to the heating element 10 than the second heating wall 221. The reaction chamber 202 comprises a first reaction chamber 2021 located between the intermediate heating base 23 and the first heating wall 211, and a second reaction chamber 2022 located between the intermediate heating base 23 and the second heating wall 221.

[0063] In the embodiments shown in Figures 1, 3, 6, and 7, the thermal suppression area formed by orthogonally projecting the first thermal suppression unit onto a plane perpendicular to the stacking direction in the stacking direction is located between two side regions formed by orthogonally projecting the first thermal storage unit onto the same plane in the stacking direction, and the order of arrangement in the lateral direction is side region thermal suppression area-side region. The thermal suppression area formed by orthogonally projecting the second thermal suppression unit onto a plane perpendicular to the stacking direction in the stacking direction is located between two side regions formed by orthogonally projecting the second thermal storage unit onto the same plane in the stacking direction, and the order of arrangement in the lateral direction is side region thermal suppression area-side region. In the embodiment shown in Figure 6, both the side of the intermediate heating base 23 closer to the upper heating base 21 and the side closer to the bottom heating base 22 are perpendicular to the stacking direction, and the thermal suppression area and side region are denoted by F1 and F2 in Figure 6, respectively.

[0064] 1, 2, 6, and 7, the thermal suppression section 2012a and the thermal storage section 2012b of the upper heating base 21 and the lower heating base 22 are positioned such that the thermal storage section 2012b is located on both sides of the thermal suppression section 2012a and is arranged laterally with the thermal suppression section 2012a. The thermal suppression area and the side region are arranged in the order of side region-thermal suppression area-side region in the horizontal direction. This can improve the temperature uniformity of the first reaction chamber 2021 and the second reaction chamber 2022, more specifically, improve the horizontal internal temperature uniformity of the first reaction chamber 2021 and the second reaction chamber 2022. The following is an analysis of the principle behind achieving the temperature uniformity in the reaction chamber 202.

[0065] Compared with the heat storage section 2012b, the thermal suppression section 2012a has a thinner wall, so the peak heat that can be stored, i.e., the heat storage capacity, is reduced, and the heat radiated from the thermal suppression section 2012a to the reaction chamber 202 is reduced. As a result, the middle region of the reaction chamber 202 located between the two longitudinal sections shown in FIG. 4 receives less heat from the thermal suppression section 2012a and its temperature drops, reducing the temperature difference between the middle region and other regions of the reaction chamber 202. This improves the temperature uniformity in the reaction chamber 202, and further reduces the difference in chemical reaction rate between the middle region and other regions of the reaction chamber 202, thereby matching the deposition rates of the gaseous reactant raw materials in different regions of the reaction chamber 202, thereby improving the thickness uniformity and deposition quality of the epitaxial film.

[0066] In comparison, in epitaxial growth apparatuses in the related art, the middle region of the reaction chamber receives excessive radiant heat from the heating base during use, which causes the temperature of the middle region of the reaction chamber to be significantly higher than the temperature on both sides of the middle region, ultimately resulting in a large difference between the reaction rate in the middle region of the reaction chamber and the reaction rate on both sides of the middle region, which in turn causes the thickness of the deposition product on the tray substrate to be non-uniform and of poor quality.

[0067] Specifically, the first uniform heat groove 213 is provided in the first radiant wall 212, and the second uniform heat groove 223 is provided in the second radiant wall 222. In the embodiment shown in FIGS. 1 and 2, the first uniform heat groove 213 penetrates the first radiant wall 212 from a side closer to the first heating wall 211 to a side farther from the first heating wall 211, the second uniform heat groove 223 penetrates the second radiant wall 222 from a side closer to the second heating wall 221 to a side farther from the second heating wall 221, the thickness of the first thermal suppression portion is the thickness of the first heating wall 211, and the thickness of the first heat storage portion is the thickness of the first heating wall 211 and the thickness of the first radiant wall 222. The thickness of the second thermal suppression section is the thickness of the second heating wall 221, and the thickness of the second heat storage section is the sum of the thickness of the second heating wall 221 and the thickness of the second radiant wall 222. In the embodiment shown in Figure 3, the first uniform heat groove 213 is a blind slot that penetrates the side of the first radiant wall 212 closer to the first heating wall 211, and the second uniform heat groove 223 is a blind slot that penetrates the side of the second radiant wall 222 closer to the second heating wall 221.

[0068] In one embodiment, the first reaction chamber 2021 and the second reaction chamber 2022 have the same shape and size, and are arranged symmetrically with respect to a bisecting cross section, which is parallel to the horizontal direction and the axial direction of the reactant 20 and perpendicular to the stacking direction, and the bisecting cross section includes the axis of the reactant 20.

[0069] In one embodiment, based on the first reaction chamber 2021 and the second reaction chamber 2022 being symmetrical about the bisecting cross section, the first uniform heat groove 213 and the second uniform heat groove 223 are arranged symmetrically about the bisecting cross section.

[0070] In one embodiment, based on the first reaction chamber 2021 and the second reaction chamber 2022 being symmetrical about a bisecting cross section, the upper heating base 21 and the bottom heating base 22 are arranged symmetrically about a bisecting cross section.

[0071] In one embodiment, the first heating wall 211, the intermediate heating base 23 and the second heating wall 221 are all flat structures, and are parallel to each other. The distance between the first heating wall 211 and the intermediate heating base 23 is equal to the distance between the second heating wall 221 and the intermediate heating base 23. Therefore, the first heating wall 211 and the side of the intermediate heating base 23 away from the first heating wall 211 can support two trays or two substrates in the same posture, and the second heating wall 221 and the side of the intermediate heating base 23 away from the second heating wall 221 can support two trays or two substrates in the same posture. When the stacking direction is vertical, substrates can be installed horizontally in both the first reaction chamber 2021 and the second reaction chamber 2022.

[0072] In another embodiment, referring to FIG. 7 , the first uniform heat groove 213 may be a blind slot provided in the first heating wall 211, and the second uniform heat groove 223 may be a blind slot provided in the second heating wall 221. Based on this, the first heating wall 211 and the first radiating wall 212 may both be provided with the first uniform heat groove 213, and the second heating wall 221 and the second radiating wall 222 may both be provided with the second uniform heat groove 223, as long as the first uniform heat groove 213 does not penetrate both sides of the first heating wall 211, and the second uniform heat groove 223 does not penetrate both sides of the second heating wall 221.

[0073] 1, 3, 5, and 6, each intermediate heating base 23 is provided with a heat groove 2013 (abbreviated as the third uniform heating groove 231). The third uniform heating groove 231 improves the physical volume of the intermediate heating base 23, making the structure of the intermediate heating base 23 lighter and improving the thermal conductivity of heat within the intermediate heating base 23. Improving the thermal conductivity of the intermediate heating base 23 itself can solve the following problem caused by the skin effect: In conventional epitaxial growth apparatuses, the temperature of the peripheral wall and heating element 10 of the intermediate heating base 23, which are relatively close to the reactants 20, is high. The temperature inside the intermediate heating base 23 decreases with increasing distance from the peripheral wall and heating element 10 of the reactants 20, resulting in uneven temperatures at different locations within the intermediate heating base 23.

[0074] Specifically, when the intermediate heating base of the related art epitaxial growth apparatus is cut along a plane perpendicular to the axial direction of the reactants, and the cross section of the intermediate heating base forms a cross-sectional shape, the temperatures at both ends of the cross section in the horizontal direction are significantly higher than the temperature between the two ends of the cross section. This is mainly because the thermal conductivity rate of the intermediate heating base in the related art is too low, making it difficult for heat from both ends of the cross section to be conducted between the two ends of the cross section. After the third uniform heat groove 231 is provided, the heat from the left and right ends of the cross section of the intermediate heating base shown in FIGS. 3 and 5 can be conducted more quickly to the center of the cross section of the intermediate heating base. This allows the intermediate heating base 23 to not only uniformly heat the first reaction chamber 2021 and the second reaction chamber 2022 in the stacking direction, but also to balance the temperatures of different regions in the first reaction chamber 2021 and the second reaction chamber 2022 in the horizontal direction.

[0075] In one embodiment, the third uniform heating groove 231 does not penetrate both the side of the intermediate heating base 23 close to the upper heating base 21 and the side of the intermediate heating base 23 close to the bottom heating base 22 at the same time, so that no exchange diffusion of gaseous reactant materials occurs between the reaction chambers 202 on both sides of the intermediate heating base 23. Based on this, the third uniform heating groove 231 may be provided on the side of the intermediate heating base 23 close to the upper heating base 21 or on the side of the intermediate heating base 23 close to the bottom heating base 22.

[0076] In one embodiment, the third uniform heat groove 231 extends in the axial direction of the reactants 20 and penetrates at least one of the two ends of the intermediate heating base 23, and the two ends of the intermediate heating base 23 are arranged opposite to each other in the axial direction of the reactants 20. After the third uniform heat groove 231 penetrates both ends of the intermediate heating base 23, the problem of temperature imbalance in the intermediate heating base 23 at any position in the axial direction of the reactants 20 is alleviated and improved.

[0077] 1, 3 and 5, the third uniform heating grooves 231 are arranged in a row in the horizontal direction on the intermediate heating base 23, so that the intermediate heating base 23 has a plurality of thin segments and a plurality of thick segments, and the thin segments and the thick segments are arranged alternately in the horizontal direction. In other embodiments, the number of third uniform heating grooves 231 may be one.

[0078] Furthermore, in some embodiments, the thermal insulation material 40 further includes an intermediate thermal felt 43 disposed on the intermediate heating base 23, which is used to prevent mutual heat conduction between the two sides of the intermediate heating base 23 and prevent the reaction chambers 202 on both sides of the intermediate heating base 23 from affecting each other's temperatures. Referring to FIG. 1 , the intermediate thermal felt 43 is disposed in the third uniform heat groove 231.

[0079] In one embodiment, the inner space of each of the third uniform heat grooves 231 is filled with an intermediate heat-insulating felt 43, thereby further improving the insulating effect of the intermediate heat-insulating felt 43 and ensuring that the temperatures of the reaction chambers 202 on both sides of the intermediate heating base 23 are appropriate and do not affect each other.

[0080] In some embodiments, the heating element 10 is an induction coil 11 disposed around the reactants 20, and the induction coil 11 generates an induced current and heat in the reactants 20 through electromagnetic induction, and the resistivity of the material of the intermediate heating base 23 is greater than that of the material of the upper heating base 21, which is greater than that of the material of the lower heating base 22. This increases the heat generation capacity of the intermediate heating base 23, eliminating the drawbacks of similar intermediate heating bases, such as difficulty in heating up and low temperature.

[0081] In some embodiments, the thermal conductivity of the material of the intermediate heating base 23 is greater than that of the material of the upper heating base 21, and greater than that of the material of the lower heating base 22. Therefore, the thermal conductivity of the intermediate heating base 23 itself is improved, and heat can be conducted more quickly from points on the intermediate heating base 23 that are relatively close to the heating element 10 to the center of the intermediate heating base 23, which contributes to improving the temperature uniformity at different points on the intermediate heating base 23 and allows the trays supported by the intermediate heating base 23 to be heated uniformly.

[0082] In one example, in some embodiments, whether the uniform heat grooves 2013 are provided in the upper heating base 21, the bottom heating base 22, or the middle heating base 23, the uniform heat grooves 2013 are distributed along the axial direction of the reactants 20. The number of uniform heat grooves 2013 may be multiple, and the heating base 201 shown in FIG. 8 is the upper heating base 21 or the bottom heating base 22 having a heating wall and a radiating wall, and the multiple uniform heat grooves 2013 are arranged in a row in the axial direction of the reactants 20. Of course, the uniform heat grooves 2013 may be strip grooves extending continuously in the axial direction of the reactants 20, and the heating base 201 shown in FIG. 9 is the upper heating base 21 or the bottom heating base 22 having a heating wall and a radiating wall.

[0083] In one embodiment, at least some of the uniform heat grooves 2013 do not penetrate both ends of the heating base 201, and the both ends of the heating base 201 are opposite ends of the heating base 201 in the axial direction of the reactants 20. Referring to Figure 2, the first uniform heat groove 213 in the first radiating wall 212 extends in the axial direction of the reactants 20 without penetrating both ends of the first radiating wall 212, and the second uniform heat groove 223 in the second radiating wall 222 extends in the axial direction of the reactants 20 without penetrating both ends of the second radiating wall 222. The third uniform heat groove 231 in the intermediate heating base 23 extends continuously in the axial direction of the reactants 20 and may penetrate both ends of the intermediate heating base 23, or may be a blind slot extending in the axial direction of the reactants 20.

[0084] The two axially opposite ends of the heating base 201 of the reactant 20 can be divided into a front end and a rear end. The front end refers to an end for receiving the gaseous reactant to be injected into the reaction chamber 202, and the rear end refers to an end for receiving excess or residual gaseous reactant. If the uniform heat groove 2013 does not penetrate the front end of the upper heating base 21 and / or the front end of the bottom heating base 22, the front ends of the upper heating base 21 and / or the bottom heating base 22 can radiate more heat to the gaseous reactant immediately after being injected into the reaction chamber 202, thereby increasing the initial temperature of the gaseous reactant when it enters the reaction chamber 202 and accelerating the chemical reaction process.

[0085] In some embodiments, at least a portion of the uniform heat grooves 2013 are cut by a bisecting longitudinal section, which is parallel to the stacking direction and the axial direction of the reactants 20 and perpendicular to the transverse direction, and which includes the axis of the reactants 20. Referring to Figures 1 and 3, the first uniform heat groove 213 and the second uniform heat groove 223 are both cut by a bisecting longitudinal section. When installed in this manner, the first thermal suppression section is more central in the transverse direction relative to the two first heat storage sections on either side of the first thermal suppression section, and the second thermal suppression section is more central in the transverse direction relative to the two second heat storage sections on either side of the second thermal suppression section, which contributes to alleviating overheating problems in the middle regions of the first reaction chamber 2021 and the second reaction chamber 2022, reduces the temperature difference between the middle region and both sides of the middle region of the reaction chamber 202, and improves the temperature uniformity of the reaction chamber 202.

[0086] In one embodiment, the upper heating base 21, the middle heating base 23 and the bottom heating base 22 all have symmetrical structures with the bisected vertical section as the plane of symmetry. After the first heat storage section is orthogonally projected onto a plane vertical to the stacking direction, the two side regions formed are distributed symmetrically with respect to the bisected vertical section. After the second heat storage section is orthogonally projected onto a plane vertical to the stacking direction, the two side regions formed are distributed symmetrically with respect to the bisected vertical section. The first uniform heat groove 213 and the second uniform heat groove 223 are cut into two equal parts by the bisected vertical section. After the first thermal suppression section and the second thermal suppression section are orthogonally projected onto a plane vertical to the stacking direction, the formed thermal suppression area is cut into two equal parts by the bisected vertical section.

[0087] Referring to the simulation experimental data shown in Figures 10 to 12 below, the temperature distribution change and reaction rate optimization effect are analyzed after forming the thermal suppression section 2012a and the thermal storage section 2012b by providing the uniform heat groove 2013 in different heating bases 201.

[0088] Before the simulation experiment, six groups of temperature sampling points are set in advance for the reactant 20 shown in Figures 1 and 3. Referring to Figure 6, The temperature sampling points of the first group are represented by T1, and T1 represents the central temperature of the heating wall 2011 (first heating wall 211) of the upper heating base 21 on a side relatively close to the intermediate heating base 23. The second group of temperature sampling points is represented by T2, which represents the center temperature of the intermediate heating base 23 on the side relatively close to the upper heating base 21; The third group of temperature sampling points is represented by T3, which is also located on the side of the intermediate heating base 23 relatively close to the upper heating base 21 and represents the temperature around the temperature sampling point T2; The fourth group of temperature sampling points is represented by T4, which represents the center temperature of the intermediate heating base 23 on the side relatively close to the bottom heating base 22; The temperature sampling point of the fifth group is represented by T5, which represents the central temperature of the heating wall 2011 (second heating wall 221) of the bottom heating base 22 on a side relatively close to the middle heating base 23; The sixth group of temperature sampling points is represented by T6, which is also located on the side of the second heated wall 221 relatively close to the intermediate heated base 23 and represents the temperature around the temperature sampling point T5.

[0089] 10 is a schematic diagram of the temperature distribution in a reactor of an epitaxial growth apparatus in the related art. The reactor has the same outer contour as the reactor of the epitaxial growth apparatus of the present application, and similarly includes an upper heating base, a middle heating base, and a lower heating base that are stacked in order in the stacking direction, but none of the three heating bases has a uniform heat groove 2013. There are also no structural sections for a thermal suppression section 2012a and a heat storage section 2012b.

[0090] Before conducting a simulation experiment on the reactants in the related art, six groups of temperature sampling points are similarly selected. The positions of the six groups of temperature sampling points correspond to the positions of the temperature sampling points in Figure 6, and the temperature difference situation of the six groups of temperature sampling points T1 to T6 in Figure 10 is as follows: ΔT(1-4)=16℃>15℃;ΔT(5-2)=8℃>5℃;ΔT(2-3)=18℃>10℃;ΔT(5-6)=16℃>10℃

[0091] The figure also includes temperature data for the inlet temperature sampling point Tin (abbreviated as Tin-1) of the upper heating base and the inlet temperature sampling point Tin (abbreviated as Tin-2) of the intermediate heating base, where sampling point Tin-1 is located at the front end of the upper heating base and sampling point Tin-2 is located at the front end of the intermediate heating base. Tin-1=1350°C, which represents the initial temperature when the gaseous reactant enters the first reaction chamber, in other words, the inlet starting temperature of the first reaction chamber. Tin-2=1260°C, which represents the initial temperature when the gaseous reactant enters the second reaction chamber, in other words, the inlet starting temperature of the second reaction chamber. ΔTin=90°C.

[0092] 11 is a schematic diagram of the temperature distribution of the reactor 20 of Example 1 of the present application. In the reactor 20 of Example 1, the middle heating base 23 is provided with a plurality of third uniform heat grooves 231. Therefore, the middle heating base 23 has a thermal suppression section 2012a and a heat storage section 2012b, and neither the top heating base 21 nor the bottom heating base 22 is provided with a uniform heat groove 2013. The temperature difference status of the six groups of temperature sampling points T1 to T6 in FIG. 11 is as follows: ΔT(1-4)=45℃>15℃;ΔT(5-2)=7℃>5℃;ΔT(2-3)=11℃>10℃;ΔT(5-6)=11℃>10℃

[0093] The figure also includes temperature data for the inlet temperature sampling point Tin (abbreviated as Tin-1) of the upper heating base 21 and the inlet temperature sampling point Tin (abbreviated as Tin-2) of the intermediate heating base 23, where sampling point Tin-1 is located at the front end of the upper heating base 21 and sampling point Tin-2 is located at the front end of the intermediate heating base 23. Tin-1=1505°C, which represents the initial temperature when the gaseous reactant enters the first reaction chamber 2021, in other words, the inlet starting temperature of the first reaction chamber 2021. Tin-2=1454°C, which represents the initial temperature when the gaseous reactant enters the second reaction chamber 2022, in other words, the inlet starting temperature of the second reaction chamber 2022. ΔTin=51°C.

[0094] The intermediate heating base of the related art reactant shown in Figure 10 is provided with a third uniform heating groove to obtain the reactant 20 of Example 1 of the present application shown in Figure 11. Comparing Figures 10 and 11, ΔT(2-3) is reduced, the temperature difference between the middle and both sides of the intermediate heating base 23 with the third uniform heating groove 231 is reduced, temperature uniformity is improved, and the problem of temperature unevenness in the intermediate heating base 23 caused by the skin effect, i.e., the temperature near the heating element 10 is too high and the temperature far from the heating element 10 is too low, is resolved. ΔT(5-6) is reduced, the temperature uniformity at each part of the second heating wall 221 of the bottom heating base 22 is also improved. ΔTin is reduced, and the difference between the inlet start temperature of the first reaction chamber 2021 and the inlet start temperature of the second reaction chamber 2022 is reduced by the intermediate heating base 23 with the third uniform heating groove 231.

[0095] Figure 12 is a schematic diagram of the temperature distribution of the reactor 20 in Example 2 of the present application. The reactor 20 in Example 2 is the reactor 20 shown in Figures 1, 2, 3 and 6, and the upper heating base 21, the bottom heating base 22 and the middle heating base 23 are all provided with uniform heat grooves 2013. The temperature difference situations of the six groups of temperature sampling points T1 to T6 in Figure 12 are as follows: ΔT(1-4)=16℃>15℃;ΔT(5-2)=4℃<5℃;ΔT(2-3)=7℃<10℃;ΔT(5-6)=8℃<10℃

[0096] The figure also includes temperature data for the inlet temperature sampling point Tin (abbreviated as Tin-1) of the upper heating base 21 and the inlet temperature sampling point Tin (abbreviated as Tin-2) of the intermediate heating base 23, where sampling point Tin-1 is located at the front end of the upper heating base 21 and sampling point Tin-2 is located at the front end of the intermediate heating base 23, Tin-1=1532°C, representing the initial temperature when the gaseous reactant enters the first reaction chamber 2021, Tin-2=1525°C, representing the initial temperature when the gaseous reactant enters the second reaction chamber 2022, and ΔTin=7°C.

[0097] The ΔTin value in FIG. 12 is significantly lower than the ΔTin value in FIG. 10 and is also significantly lower than the ΔTin value in FIG. 11, so the difference between the inlet start temperature of the first reaction chamber 2021 and the inlet start temperature of the second reaction chamber 2022 is further reduced, the ΔT(2-3) value in FIG. 12 is lower than the ΔT(2-3) value in FIGS. 10 and 11, and the ΔT(5-6) value in FIG. 12 is lower than the ΔT(5-6) value in FIGS. 10 and 11. Comparing FIGS. 10, 11, and 12, By providing the third uniform heat groove 231 on the intermediate heating base 23, the temperature uniformity and heat conduction efficiency of the intermediate heating base 23 can be improved, and heat can be transferred more quickly and in greater amounts from the T3 temperature sampling point to the T2 temperature sampling point and the T4 temperature sampling point, increasing the temperatures of T2 and T4, and also increasing the temperatures of T3 and T6. Therefore, the temperatures in the first reaction chamber 2021 and the second reaction chamber 2022 are greatly improved. Finally, the trays supported by the intermediate heating base 23 and the trays supported by the bottom heating base 22 can be heated to higher temperatures more quickly, which contributes to saving the power consumption of the heating element 10. The provision of the first uniform heat groove 213 on the upper heating base 21 reduces the heat radiation from the first thermal suppression section to the middle region of the first reaction chamber 2021, thereby reducing the temperatures T1 and T2, i.e., the temperature at the center of the first heating wall 211 close to the middle heating base 23, and the temperature at the center of the middle heating base 23 close to the first heating wall 211, ultimately reducing the temperature difference ΔT(2-3) between T2 and T3 and improving the temperature uniformity of different parts of the middle heating base 23. By providing the second uniform heat groove 223 on the bottom heating base 22, the heat radiation from the second thermal suppression section to the middle region of the second reaction chamber 2022 can be reduced, and the temperatures T5 and T4 can be reduced, i.e., the temperature at the center position of the second heating wall 221 closer to the middle heating base 23, and the temperature at the center position of the middle heating base 23 closer to the second heating wall 221, thereby ultimately reducing the temperature difference ΔT(5-6) between T5 and T6 and improving the temperature uniformity in different parts of the second heating wall 221.

[0098] In addition, the present application does not limit the number and distribution of the heating bases 201 on which the uniform heat grooves 2013 are provided. According to the actual temperature control needs, the uniform heat grooves 2013 can be provided on different heating bases 201 to form the structural division of the heat suppression part 2012a and the heat storage part 2012b, for example: If ΔT(1-4) needs to be reduced to, for example, 15°C or less, both the upper heating base 21 and the intermediate heating base 23 can be provided with a uniform heat groove 2013. The first radiation wall 212 of the upper heating base 21 is provided with a first uniform heat groove 213. The first thermal suppression section is located between the two first thermal storage sections, and the first thermal suppression section and the first thermal storage section are arranged in a horizontal direction. As the size of the first uniform heat groove 213 increases, the temperature of T1 decreases. As the size of the third uniform heat groove 231 increases and the thermal conductivity of the intermediate heating base 23 increases, the temperature of T4 increases. If ΔT(5-2) needs to be reduced to, for example, 5°C or less, both the bottom heating base 22 and the middle heating base 23 can be provided with a heat uniforming groove 2013. The second radiation wall 222 of the bottom heating base 22 is provided with a second heat uniforming groove 223. The second heat suppression section is located between the two second heat storage sections, and the second heat suppression section and the second heat storage section are arranged in a horizontal direction. As the size of the second heat uniforming groove 223 increases, the temperature of T5 decreases. As the size of the third heat uniforming groove 231 increases and the thermal conductivity of the middle heating base 23 increases, the temperature of T2 increases. If ΔT(2-3) needs to be reduced to, for example, 10°C or less, the upper heating base 21 can be provided with a uniform heat groove 2013. The first radiation wall 212 of the upper heating base 21 is provided with a first uniform heat groove 213. The first thermal suppression section is located between two first thermal storage sections, and the first thermal suppression section and the first thermal storage section are arranged in a horizontal direction. The larger the size of the first uniform heat groove 213, the lower the temperature of T2. If ΔT(5-6) needs to be reduced to, for example, 10°C or less, the bottom heating base 22 can be provided with a uniform heat groove 2013, and the second radiation wall 222 of the bottom heating base 22 is provided with a second uniform heat groove 223, the second thermal suppression section is located between the two second thermal storage sections, and the second thermal suppression section and the second thermal storage section are arranged in a horizontal direction. The larger the size of the second uniform heat groove 223, the lower the temperature of T5 will be. If it is necessary to reduce ΔTin, a uniform heat groove 2013 can be provided in the intermediate heating base 23, and the larger the size of the third uniform heat groove 2013 and the smaller the physical volume of the intermediate heating base 23, the lower the ΔTin value.

[0099] Although the technical features of the above-described embodiments can be combined in any manner, for the sake of brevity, not all possible combinations of the technical features in the above-described embodiments are described. As long as there is no contradiction in the combination of these technical features, any combination should be considered to be within the scope of the present specification.

[0100] The above examples only show some embodiments of the present application, and the descriptions are specific and detailed, but should not be understood as limiting the patent scope of the application. It should be noted that those skilled in the art can make further modifications and improvements without departing from the concept of the present application, and all of these fall within the scope of protection of the present application. Therefore, the scope of protection of the present application should be determined based on the scope of the accompanying claims. [Explanation of symbols]

[0101] 100 Epitaxial growth equipment 10 Heating Elements 11 Induction coil 20 Reactants 201 Heating Base 2011 heating wall 2012 Radiant Wall 2012a Thermal Suppression Section 2012b Heat storage section 2013 Uniform Heat Groove 202 Reaction Chamber 2021 Reaction Chamber 1 2022 Second Reaction Chamber 21 Upper heated base 211 1st heating wall 212 1st radiant wall 213 First uniform heat groove 22 Bottom heating base 221 2nd heating wall 222 2nd radiation wall 223 Second uniform heat groove 23 Intermediate Heating Base 231 Third uniform heat groove 30 Bracket 40 Heat insulation material 41 Upper thermal insulation felt 42 Bottom insulation felt 43 Intermediate thermal insulation felt 44 Insulated end cap

Claims

1. An epitaxial growth apparatus comprising: a reactor having a plurality of heating bases stacked in a stacking direction to form a stack; and a heating element provided around the reactor, wherein at least one of the heating bases has a thermal suppression portion and a heat storage portion, and the thickness of the thermal suppression portion is thinner than the thickness of the heat storage portion; The thermal suppression section has a thermal suppression area formed by orthogonal projection onto a figure of a plane perpendicular to the stacking direction, and the heat storage section has a side region formed by orthogonal projection onto the figure of the same plane perpendicular to the stacking direction, the thermal suppression area and the side region being arranged in a horizontal direction, and the horizontal direction is perpendicular to the stacking direction and the axial direction of the reactants. An epitaxial growth apparatus comprising:

2. At least one of the heating bases is provided with a uniform heat groove, and the thermal suppression portion and the uniform heat groove are provided in order in the stacking direction, and a portion of the heating base where the uniform heat groove is not provided forms the heat storage portion.

2. The epitaxial growth apparatus according to claim 1.

3. the heating base includes an upper heating base at the top of the stack and a lower heating base at the bottom of the stack; the upper heating base includes a first heating wall and a first radiation wall arranged in the stacking direction, and a first reaction chamber and the first radiation wall are provided on both sides of the first heating wall, respectively; the bottom heating base includes a second heating wall and a second radiation wall arranged in the stacking direction, and a second reaction chamber and the second radiation wall are respectively provided on both sides of the second heating wall; The uniform heat groove includes a first uniform heat groove provided in at least one of the first heating wall and the first radiating wall; and / or The uniform heat groove includes a second uniform heat groove provided in at least one of the second heating wall and the second radiation wall.

3. The epitaxial growth apparatus according to claim 2.

4. The uniform heat groove includes a first uniform heat groove provided in the first radiation wall, the first uniform heat groove penetrating at least one side of the first radiation wall; and / or The uniform heat groove includes a second uniform heat groove formed in the second radiation wall, the second uniform heat groove penetrating at least one side of the second radiation wall.

4. The epitaxial growth apparatus according to claim 3.

5. The uniform heat groove includes a first uniform heat groove provided in the first radiation wall, and the first uniform heat groove does not penetrate both sides of the first radiation wall; and / or The uniform heat groove includes a second uniform heat groove provided on the second radiation wall, and the second uniform heat groove does not penetrate both sides of the second radiation wall.

4. The epitaxial growth apparatus according to claim 3.

6. the top heating base and the bottom heating base are symmetrical about a bisecting cross section, the bisecting cross section being parallel to the transverse direction and parallel to the axial direction of the reactants and containing the axes of the reactants; and / or At least one of the upper heating base and the lower heating base is provided with the uniform heat groove, and the uniform heat groove is cut by a bisecting longitudinal section, the bisecting longitudinal section being parallel to the stacking direction and parallel to the axial direction of the reactants, and including the axis of the reactants.

4. The epitaxial growth apparatus according to claim 3.

7. The uniform heat groove includes a first uniform heat groove provided on the upper heating base, the thermal suppression part includes a first thermal suppression part formed on the upper heating base, the thermal storage part includes two first thermal storage parts formed on the upper heating base, the first thermal suppression part is located between the two first thermal storage parts and is provided in sequence corresponding to the first uniform heat groove in the stacking direction, and / or The uniform heat groove includes a second uniform heat groove provided on the bottom heating base, the thermal suppression portion includes a second thermal suppression portion formed on the bottom heating base, the thermal storage portion includes two second thermal storage portions formed on the bottom heating base, and the second thermal suppression portion is located between the two second thermal storage portions and is provided in sequence corresponding to the second uniform heat groove in the stacking direction.

4. The epitaxial growth apparatus according to claim 3.

8. the uniform heat grooves are distributed along the axial direction of the reactants, the uniform heat grooves extend continuously in the axial direction of the reactants, and / or The heating base includes an upper heating base located on the top of the stack, and the uniform heat groove includes a first uniform heat groove provided in the upper heating base, the first uniform heat groove not penetrating both ends of the upper heating base; and / or The heating base includes a bottom heating base at the bottom of the stack, and the uniform heat groove includes a second uniform heat groove provided in the bottom heating base, and the second uniform heat groove does not penetrate both ends of the bottom heating base.

8. The epitaxial growth apparatus according to claim 2, wherein the epitaxial growth apparatus is a semiconductor substrate.

9. The heating base includes an upper heating base, a lower heating base, and at least one intermediate heating base located between the upper heating base and the lower heating base, and at least one intermediate heating base is provided with the uniform heat groove.

3. The epitaxial growth apparatus according to claim 2.

10. The uniform heat groove does not penetrate to both sides of the intermediate heating base; and / or the uniform heat groove extends axially of the reactants through at least one end of the intermediate heating base; and / or The number of the uniform heating grooves is plural, and the plural uniform heating grooves are sequentially arranged on the intermediate heating base in the lateral direction.

10. The epitaxial growth apparatus according to claim 9.

11. The epitaxial growth apparatus further comprises a heat insulating material, the heat insulating material comprising an intermediate heat insulating felt, the intermediate heat insulating felt being disposed in the uniform heat groove disposed in the intermediate heating base; and / or the material of the intermediate heating base has a resistivity greater than at least one of the resistivity of the material of the top heating base and the resistivity of the material of the bottom heating base; and / or The material of the intermediate heating base has a thermal conductivity greater than at least one of the thermal conductivity of the material of the upper heating base and the thermal conductivity of the material of the bottom heating base.

10. The epitaxial growth apparatus according to claim 9.

12. The stacking direction is perpendicular to the axial direction of the reactants.

12. The epitaxial growth apparatus according to claim 1, wherein the epitaxial growth apparatus is a semiconductor substrate.

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