Piezoelectric laminated structure and manufacturing method

Abstract

This application relates to the technical field of semiconductor processes, and more particularly to piezoelectric multilayer structures and methods for manufacturing the same. The piezoelectric multilayer structure includes a substrate and further includes a strain limiting layer, a piezoelectric layer, and a structural layer sequentially stacked on the front surface of the substrate, wherein the piezoelectric layer bends in the direction of the substrate, and the structural layer bends in the direction of the piezoelectric layer. The method includes the steps of growing a strain limiting layer on the front surface of a substrate layer, growing a piezoelectric layer on the surface of the strain limiting layer and, under stress, the piezoelectric layer bends in the direction of the substrate, causing the front surface of the substrate to deform accordingly and bend to the back surface, depositing a structural layer on the surface of a PZT upper electrode using a low-temperature PECVD process and causing the structural layer to deform and bend into a piezoelectric layer, and patterning the structural layer and the substrate to form the required piezoelectric multilayer structure. In this application, the structural layer grown on the surface of the piezoelectric layer is deformed into a piezoelectric layer, the initial strain of the multilayer structure is made negative, the residual stress and vibration stress in the effective operating region are superimposed, and the performance of the device is improved.

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