Integrated Semiconductor Inspection System

Abstract

To provide a combined semiconductor inspection system which simultaneously has characteristics such as high efficiency and high accuracy and can be applied to various complicated semiconductor products. The integrated semiconductor inspection system 1 includes a multi-axis sample stage 10, an optical metrology subsystem 12, an X-ray metrology subsystem 14, and a processing device 16. The optical metrology subsystem includes a light source generator 120, an input optical element group 122, a receiving optical element group 124, and an optical receiver 126. The optical receiver receives an optical test signal and generates corresponding optical spectrum information. The X-ray metrology subsystem includes an X-ray generator 140, an X-ray optical element group 142, and an X-ray detector 144. The X-ray detector receives the X-ray test signal and generates corresponding X-ray spectrum information. The processing device is configured to perform a fitting analysis process based on the optical spectrum information and the X-ray spectrum information, and obtain structural parameters of the test sample as an analysis result.

Description

Technical Field

[0001] The present invention relates to a system, and more particularly to a composite semiconductor inspection system that simultaneously has characteristics such as high efficiency and high precision and can be applied to various complex semiconductor products.

Background Art

[0002] Currently, the semiconductor industry is developing rapidly, and new technologies are emerging one after another. In order to meet the applications of various end products, innovative structures are being developed one after another. In the field of integrated circuit manufacturing, in order to increase the drive current while reducing the voltage and improve the application efficiency of transistors, a nanoscale three-dimensional structure has been developed. For example, a Gate-All Around structure and a Complementary FET can be mentioned. Furthermore, in the field of memory manufacturing, in order to increase the memory capacity per unit area, improve the storage efficiency and the data read / write speed, 3D NAND with a vertically repeatedly stacked and interconnected high aspect ratio structure has been developed. In order to address the issues associated with these advanced processes and structures and improve the yield of the manufacturing process, the development of measurement devices is an extremely important factor.

[0003] So far, in the production line process of integrated circuit manufacturing, optical measurement technology has been the mainstream. However, as more metal oxide materials are introduced and the number of layers of the memory structure with a higher aspect ratio increases to more than 200 layers, the limitations of optical technology are becoming more prominent. In order to provide higher transmission ability and improve the measurement resolution, it is necessary to introduce X-ray technology for analysis. At present, there is still no single system or device that can handle the measurement work in diverse and extensive process technologies.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technical problem to be solved by the present invention is to provide a composite semiconductor inspection system that simultaneously has characteristics such as high efficiency and high precision to address the deficiencies of the prior art and can be applied to various complex semiconductor products.

Means for Solving the Problem

[0005] To solve the above technical problem, one of the technical solutions adopted by the present invention is to provide a composite semiconductor inspection system comprising a multi-axis sample stage, an optical measurement subsystem, an X-ray measurement subsystem, and a processing device. The multi-axis sample stage mounts the sample to be inspected. The optical measurement subsystem includes a light source generator, an incident-end optical element group, a receiving-end optical element group, and an optical receiver. The light source generator generates a measurement light beam having a wavelength within a light wavelength range covering at least from the ultraviolet band to the near-infrared band. The incident-end optical element group guides the measurement light beam to the sample to be inspected. The receiving-end optical element group receives an optical detection signal generated by irradiating the sample to be inspected with the measurement light beam. The optical receiver receives the optical detection signal guided by the receiving-end optical element group and generates optical spectrum information corresponding to the optical detection signal. The X-ray measurement subsystem includes an X-ray generator, an X-ray optical element group, and an X-ray detector. The X-ray generator generates a measurement X-ray beam. The X-ray optical element group guides the measurement X-ray beam to the sample to be inspected. The X-ray detector receives an X-ray detection signal generated by irradiating the sample to be inspected with the measurement X-ray beam and generates X-ray spectrum information corresponding to the X-ray detection signal. The processing device is configured to execute a fitting analysis process based on the optical spectrum information and the X-ray spectrum information and obtain one or more structural parameters of the sample to be inspected as an analysis result.

[0006] To solve the above technical problems, another technical solution adopted by the present invention is to provide a composite semiconductor inspection system including a multi-axis sample stage, at least two optical measurement subsystems, and a processing device. The multi-axis sample stage mounts the sample to be inspected. Each of the at least two optical measurement subsystems includes a light source generator, an incident-end optical element group, a light-receiving-end optical element group, and an optical light receiver. The light source generator generates a measurement light beam having a wavelength within a light wavelength range covering at least from the ultraviolet band to the near-infrared band. The incident-end optical element group guides the measurement light beam to the sample to be inspected. The light-receiving-end optical element group receives an optical inspection signal generated when the measurement light beam irradiates the sample to be inspected. The optical light receiver receives the optical inspection signal guided by the light-receiving-end optical element group and generates optical spectrum information corresponding to the optical inspection signal. The processing device is configured to execute a fitting analysis process based on the optical spectrum information generated by the at least two optical measurement subsystems and obtain one or more structural parameters of the sample to be inspected as an analysis result.

[0007] To solve the above technical problems, another technical solution adopted by the present invention is to provide a composite semiconductor inspection system including a multi-axis sample stage, at least two X-ray measurement subsystems, and a processing device. The multi-axis sample stage mounts the sample to be inspected. Each of the at least two X-ray measurement subsystems includes an X-ray generator, an X-ray optical element group, and an X-ray detector. The X-ray generator generates a measurement X-ray beam. The X-ray optical element group guides the measurement X-ray beam to the sample to be inspected. The X-ray detector receives an X-ray inspection signal generated when the measurement X-ray beam irradiates the sample to be inspected and generates X-ray spectrum information corresponding to the X-ray inspection signal. The processing device is configured to execute a fitting analysis process based on the X-ray spectrum information generated by the at least two X-ray measurement subsystems and obtain one or more structural parameters of the sample to be inspected as an analysis result.

Advantages of the Invention

[0008] As one of the beneficial effects of the present invention, in the composite semiconductor inspection system provided by the present invention, by integrating X-ray measurement technology and optical measurement technology and incorporating machine learning of neural networks for result analysis, the information obtained from X-ray measurement can be fed back to the optical measurement model to obtain more accurate analysis results. At the same time, this composite semiconductor inspection system combines the penetrability of X-ray measurement technology and the high speed of optical measurement technology to provide an all-round and highly efficient measurement solution means, and can analyze various complex semiconductor elements.

[0009] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the provided drawings are for reference and illustration purposes only and are not used to limit the present invention.

Brief Description of the Drawings

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Embodiments for Carrying Out the Invention

[0011] Hereinafter, embodiments of the "composite semiconductor inspection system" provided by the present invention will be described with specific examples. A person skilled in the art can understand the advantages and effects of the present invention from the disclosed content. The present invention can be implemented or applied through other different specific embodiments, and various detailed descriptions in this specification can also be modified and changed in various ways without departing from the idea of the present invention based on different viewpoints and uses. Also, it should be noted in advance that the drawings of the present invention are only schematically shown and not drawn based on actual dimensions. The technical content related to the present invention will be described in more detail using the following embodiments, but the disclosed content is not intended to limit the protection scope of the present invention. Also, the term "or" in this specification should be understood to include any one or a combination of multiple of the related listed items according to the actual situation. First Embodiment

[0012] FIG. 1 is a functional block diagram of the composite semiconductor inspection system according to the first embodiment of the present invention. FIG. 2 is a schematic diagram of the system configuration of the composite semiconductor inspection system according to the first embodiment of the present invention. FIG. 3 is a plan view of the measurement structure of the composite semiconductor inspection system according to the first embodiment of the present invention.

[0013] As shown in FIGS. 1 to 3, the first embodiment of the present invention provides a composite semiconductor inspection system 1 including a multi-axis sample stage 10, an optical measurement subsystem 12, an X-ray measurement subsystem 14, and a processing device 16.

[0014] The multi-axis sample stage 10 is a multi-axis movable stage for placing the sample under test SP. For example, it may be a three-axis tilt stage or a ball socket type tilt stage. The multi-axis sample stage 10 may have a stage movement mechanism and a stage rotation mechanism. The stage movement mechanism may include, for example, stepping motors corresponding to three axes in order to move the sample under test SP along one or more of the X-axis, Y-axis, and Z-axis. By controlling the stepping motors of each axis, the sample under test SP can be accurately moved to various positions. When taking the ball socket type tilt stage as an example, the stage rotation mechanism may be, for example, a ball socket joint connected to the stage portion, and the sample under test SP can be rotated around one or more of the X-axis, Y-axis, and Z-axis. Specifically, the rotation mechanism of the multi-axis sample stage 10 includes controlling the azimuth angle θ rotating around the Y-axis and the azimuth angle Φ rotating around the Z-axis, whereby the sample under test SP can be scanned in all directions.

[0015] In an embodiment of the present invention, the sample under test SP may be a wafer, a photomask, a photomask film, or a semiconductor element having a multilayer film.

[0016] The optical measurement subsystem 12 includes a light source generator 120, an incident end optical element group 122, a light receiving end optical element group 124, and an optical light receiver 126. The light source generator 120 generates a measurement light beam Lm having a wavelength within the optical wavelength range covering at least from the ultraviolet band to the near infrared band. More precisely, the light source generator 120 can generate a measurement light beam Lm having a wavelength of 200 nm to 3000 nm. In some embodiments, the light source generator 120 may include elements such as a titanium tantalum crystal laser, a mercury arc lamp, a halogen lamp, etc., whereby measurement light beams Lm of various wavelengths can be generated.

[0017] The incident-end optical element group 122 guides the measurement light beam Lm to the sample under test SP. The incident-end optical element group 122 may include one or more optical elements. In this embodiment, the incident-end optical element group 122 may include, for example, an optical filter, an optical collimator, an optical polarizer, and an optical compensator arranged in sequence between the light source generator 120 and the sample under test SP. However, the present invention is not limited thereto, and appropriate optical elements may be selected for the incident-end optical element group 122 according to the user's needs. Here, the optical filter may be used to filter the measurement light beam Lm generated by the light source generator 120 and absorb stray light other than the target detection wavelength. The optical collimator may collimate the divergent light generated by the light source generator 120 into a symmetric and orderly measurement light beam Lm. The optical polarizer may filter the measurement light beam Lm to allow light in a specific direction to pass through, thereby imparting polarization characteristics to the measurement light beam Lm. The optical compensator may convert the light source that has passed through the optical polarizer into circularly polarized light or elliptically polarized light.

[0018] Similarly, the light-receiving end optical element group 124 may include one or more optical elements for receiving the optical detection signal Lm' generated when the measurement light beam Lm irradiates the sample under test SP. The light-receiving end optical element group 124 may include optical elements such as an optical filter, an optical collimator, an optical polarizer, and an optical compensator in sequence. Here, the uses of the optical filter and the optical collimator will not be repeated. The optical polarizer arranged at the light-receiving end may be a rotating polarizer for converting the measurement light beam Lm that has passed through the optical compensator of the incident-end optical element group 122 into a light source with polarization characteristics. Similarly, the optical compensator of the light-receiving end optical element group 124 may be a rotating compensator, and its rotation improves the accuracy during measurement.

[0019] The optical receiver 126 receives the optical detection signal Lm' guided through the light-receiving end optical element group 124 and generates optical spectrum information corresponding to the optical detection signal Lm'. The optical receiver 126 may be, for example, a spectrometer that receives the optical detection signal Lm' after being reflected or scattered by the sample under test SP.

[0020] In the measurement process, the processing device 16 may control the movement and / or rotation of the multi-axis sample stage 10 such that the optical light receiver 126 of the optical measurement subsystem 12 receives a plurality of optical detected signals Lm' generated at a plurality of optical measurement positions and / or a plurality of optical measurement angles, and generates a plurality of X-ray spectrum information corresponding to these optical detected signals Lm'.

[0021] Furthermore, the light source generator 120 and the optical light receiver 126 are arranged in the optical rotation mechanism 128. The optical rotation mechanism 128 may include one or a plurality of robot arms connected to the light source generator 120 and the optical light receiver 126. Each robot arm may have degrees of freedom in a plurality of directions. Therefore, the light source generator 120 and the optical light receiver 126 can rotate around the sample to be inspected SP simultaneously or separately. In this configuration, the processing device 16 can control the rotation of the optical rotation mechanism 128 while controlling the movement and / or rotation of the multi-axis sample stage 10. As a result, the light source generator 120 irradiates the measurement light beam Lm in a plurality of directions, the optical light receiver 126 receives the generated plurality of optical detected signals Lm' from a plurality of optical measurement angles, and generates the corresponding plurality of optical spectrum information.

[0022] On the other hand, the X-ray measurement subsystem 14 includes an X-ray generator 140, an X-ray optical element group 142, and an X-ray detector 144. The X-ray generator 140 may include an X-ray tube provided with an electron beam emitter and a target material inside. The target material generates the measurement X-ray beam Lx by the collision of the accelerated electron beam. Furthermore, by selecting different target materials such as copper (Cu), iron (Fe), molybdenum (Mo), etc., measurement X-ray beams Lx having different energies or different wavelengths (or frequencies) may be generated.

[0023] The X-ray optical element group 142 guides the measurement X-ray beam Lx to the sample under test SP. The X-ray optical element group 142 may include one or more X-ray optical elements. For example, the X-ray optical element group 142 may include an X-ray mirror group, an X-ray slit, and an X-ray optical collimator that are sequentially arranged between the X-ray generator 140 and the sample under test SP. The X-ray mirror group may have a multilayer structure for focusing the measurement X-ray beam Lx in the horizontal and vertical directions. The X-ray slit can be used to control the light beam of the measurement X-ray beam Lx incident on the sample under test SP and can also be used to control the vertical divergence angle. The measurement X-ray beam Lx is mainly used in X-ray analysis techniques and is, for example, a radiation beam having a wavelength range greater than 0.1 nanometer, and examples include a hard X-ray beam, a soft X-ray beam, or a gamma-ray beam.

[0024] When the measurement X-ray beam Lx irradiates the sample under test SP, an X-ray detected signal Lx’ is generated by reflection, diffraction, scattering, or transmission according to different incident angles. By arranging the X-ray detector 144 at an appropriate position, the X-ray detected signal Lx’ generated by reflection, diffraction, scattering, or transmission can be received, and the corresponding X-ray spectrum information can be generated. The X-ray detector 144 may be a one-dimensional or higher spatial resolution detector and can receive signals for X-ray detected signals Lx’ with energies exceeding 1 keV.

[0025] In the measurement process, the processing device 16 may control the multi-axis sample stage 10 to move and / or rotate so that the X-ray detector 144 receives a plurality of X-ray detected signals Lx’ generated at a plurality of optical measurement positions and / or a plurality of X-ray measurement angles, and generates a plurality of X-ray spectrum information corresponding to these X-ray detected signals Lx’.

[0026] Furthermore, the X-ray generator 140 and the X-ray detector 144 are arranged on the X-ray rotation mechanism 146. The X-ray rotation mechanism 146 may include one or more robotic arms connected to the X-ray generator 140 and the X-ray detector 144. Each robotic arm may have degrees of freedom in multiple directions. Therefore, the X-ray generator 140 and the X-ray detector 144 can rotate around the sample to be inspected SP simultaneously or separately. In this configuration, the processing device 16 can control the movement and / or rotation of the multi-axis sample stage 10 and at the same time control the rotation of the X-ray rotation mechanism 146. As a result, the X-ray generator 140 irradiates the measurement X-ray beam Lx in multiple directions, and the X-ray detector 144 receives the generated multiple X-ray detected signals Lx' from multiple X-ray measurement angles and generates corresponding multiple X-ray spectrum information.

[0027] As shown in FIG. 3, the X-axis and the Y-axis form a reference plane, the optical measurement subsystem 12 is projected onto the reference plane to form an optical measurement path OP, the X-ray measurement subsystem 14 is projected onto the reference plane to form an X-ray measurement path XP, and the optical measurement path OP and the X-ray measurement path XP are perpendicular to each other. In this way, the composite semiconductor inspection system 1 provided by the present invention can meet the measurement requirements of anisotropy and isotropy. For example, when the X-ray measurement subsystem 14 measures, the optical measurement subsystem 12 can measure simultaneously at a specific azimuth angle Φ and achieve simultaneous measurement in different directions. In order to meet the measurement requirements in the same direction, after the X-ray measurement subsystem 14 completes the measurement, the multi-axis sample stage 10 is used to rotate the corresponding azimuth angle Φ along the Z-axis and rotate the sample to be inspected SP, so that the X-ray measurement subsystem 14 and the optical measurement subsystem 12 can measure with the same position and spatial characteristics, thereby accurately measuring the X-ray detected signal Lx' and the optical detected signal Lm' from the same azimuth and the same position in the same system.

[0028] The processing device 16 may be, for example, a computer system including a processor and a memory, and may be configured to control controllable elements of the multi-axis sample stage 10, the optical measurement subsystem 12, and the X-ray measurement subsystem 14 by executing stored instruction sets or program codes. Further, the processing device 16 may be configured to execute a fitting analysis process based on the optical spectrum information and the X-ray spectrum information, and acquire one or more structural parameters of the sample under test SP as an analysis result. The structural parameters may include one or more of thickness, roughness, density, critical dimension, line edge roughness, refractive index, and extinction coefficient.

[0029] For example, the processing device 16 may execute a plurality of electromagnetic wave calculation engines having different physical mechanisms and fit the optical spectrum information and the X-ray spectrum information. The optical spectrum information may include, for example, a reflection spectrum obtained by irradiating the sample under test SP with a measurement optical beam Lm at a plurality of different incident angles, and the X-ray spectrum information may include, for example, a reflection spectrum obtained by irradiating the sample under test SP with a measurement X-ray beam Lx at a plurality of different incident angles. The fitting result may include the structural parameters of the sample under test SP. For example, the critical dimension of a GAA-FET may be mentioned. These electromagnetic wave calculation engines may include, for example, one or more of a Finite-Difference Time-Domain (FDTD) algorithm, a Distorted Wave Born Approximation (DWBA) algorithm, a Rigorous Coupled Wave Analysis (RCWA) algorithm, a Discrete Dipole Approximation (DDP) algorithm, and a Boundary Element Method (BEM).

[0030] Specifically, the processing device 16 may be based on the electromagnetic model of the optical system constructed by these electromagnetic wave calculation engines, and use simulation to fit the optical spectrum information and X-ray spectrum information to inversely reconstruct the important structural parameters of the sample SP to be examined.

[0031] In this embodiment, the optical spectrum information may be generated by different interaction mechanisms between the measurement optical beam Lm and the sample SP to be examined. For example, the optical spectrum information may include optical reflection spectrum information and optical scattering spectrum information. By appropriately controlling the azimuth angles θ and Φ, the light source generator 120 makes the measurement optical beam Lm incident at a plurality of wavelengths and a plurality of incident angles, and the optical receiver 126 collects the optical detection signal Lm' generated by reflection, whereby the optical reflection spectrum information is obtained. Similarly, the optical receiver 126 collects the optical detection signal Lm' generated by scattering, whereby the optical scattering spectrum information is obtained. Therefore, the processing device 16 may use the same or different electromagnetic wave calculation engines to fit the optical reflection spectrum information and the optical scattering spectrum information in the fitting analysis process to inversely reconstruct the important structural parameters of the sample SP to be examined.

[0032] Similarly, the X-ray spectrum information may be generated by different interaction mechanisms of the measurement X-ray beam Lx and the sample SP to be examined. For example, the X-ray spectrum information may include X-ray reflection spectrum information, X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information. By appropriately controlling the azimuth angles θ and Φ and collecting the X-ray signal Lx' to be examined generated by reflection with the X-ray detector 144, the optical reflection spectrum information is obtained. Similarly, by collecting the X-ray signals Lx' to be examined generated by scattering, diffraction, and fluorescence excitation with the X-ray detector 144 respectively, the X-ray scattering spectrum information, the X-ray diffraction spectrum information, and the X-ray fluorescence spectrum information are obtained. Therefore, in the fitting analysis process, the processing device 16 may perform a fitting analysis including X-ray reflectivity (XRR) analysis, X-ray diffraction (XRD) analysis, small-angle X-ray scattering (SAX) analysis, and X-ray fluorescence (XRF) analysis on the X-ray reflection spectrum information, the X-ray scattering spectrum information, the X-ray diffraction spectrum information, and the X-ray fluorescence spectrum information using the same or different electromagnetic wave calculation engines, and inversely reconstruct the important structural parameters of the sample SP to be examined.

[0033] Taking the XRR analysis as an example, when the measurement X-ray beam Lx is incident on the surface of the sample SP to be examined, the structural parameters of the sample SP to be examined can be determined by the XRR analysis. For example, when the sample SP to be examined has a multilayer structure, the density, thickness, roughness, etc. of each layer can be determined by the XRR analysis based on the collected X-ray reflection spectrum information. On the other hand, when the sample SP to be examined has a microelement (for example, a gate-all-around field-effect transistor (GAA-FET)), the directionality and critical dimension of the GAA-FET can be determined by the XRR analysis based on the X-ray reflection spectrum.

[0034] Refer to FIG. 4, which is a schematic diagram of a neural network employed in the fitting analysis process according to an embodiment of the present invention. It should be noted that when the processing device 16 executes the fitting analysis process, it may include inputting the generated optical spectrum information into the neural network model 2 shown in FIG. 4. The neural network model 2 includes a pre-machine learning structure 20 and a measurement data analysis structure 22.

[0035] Here, the pre-machine learning structure 20 includes an input layer 200, a plurality of hidden layers 202, and an output layer 204. The pre-machine learning structure 20 is trained to generate a plurality of optical prediction results and a plurality of X-ray prediction results based on the object under test structure and a plurality of preset structure parameters corresponding to the object under test structure.

[0036] It should be noted that the object under test structure may be an element structure within a known test sample SP. For example, 3D NAND memories stacked vertically and repeatedly and interconnected, gate-all-around (GAA) structures, and complementary metal-oxide-semiconductor field-effect transistor (CMOS) structures, etc. can be mentioned. Also, the preset structure parameters may be theoretical structure parameters used as a reference when manufacturing these elements. For example, the thickness of multi-layer / single-layer thin films, roughness, density, critical dimensions of nano-scale microstructures, line edge roughness, n-value and k-value of special semiconductor materials, etc. may be included.

[0037] The input layer 200 is used to input the above-described structural parameters to the hidden layer 202. Each hidden layer 202 sets corresponding weights or specifies thresholds according to theory or user needs to achieve the purpose of data analysis, and after learning or simulation results by a plurality of data, it is transmitted to the output layer 204. The output layer 204 is the optical prediction result and the X-ray prediction result generated by the operation and processing of this hidden layer 202, and each of the optical prediction result and the X-ray prediction result may be the optical spectrum information and the X-ray spectrum information generated by prediction.

[0038] Next, the processing device 16 inputs these optical prediction results, these X-ray prediction results, the optical spectrum information, and the X-ray spectrum information to the measurement data analysis structure 22. Similarly, the measurement data analysis structure 22 may include an input layer 220, a plurality of hidden layers 222, and an output layer 224. The measurement data analysis structure 22 may be trained to model and analyze the object under test structure based on the optical spectrum information and the X-ray spectrum information, and obtain the structural parameters of the sample under test SP by inverse inference. Furthermore, the measurement data analysis structure 22 can more quickly and accurately analyze the structural parameters of the sample under test SP by narrowing down the fitting range adopted for the sample under test SP based on the optical prediction results and the X-ray prediction results generated by the pre-machine learning structure 20.

[0039] Therefore, in the composite semiconductor inspection system provided by the first embodiment of the present invention, by integrating the X-ray measurement technology and the optical measurement technology and incorporating the machine learning of the neural network for result analysis, the information obtained from the X-ray measurement can be fed back to the optical measurement model to obtain more accurate analysis results. At the same time, this composite semiconductor inspection system combines the penetrability of the X-ray measurement technology and the high speed of the optical measurement technology to provide an all-round and high-efficiency measurement solution, and can analyze various complex semiconductor devices. Second Embodiment

[0040] FIG. 5 is a functional block diagram of a compound semiconductor inspection system according to a second embodiment of the present invention. FIG. 6 is a schematic system configuration diagram of a compound semiconductor inspection system according to a second embodiment of the present invention. FIG. 7 is a plan view of a measurement structure of a compound semiconductor inspection system according to a second embodiment of the present invention. The second embodiment of the present invention further provides a compound semiconductor inspection system 3 including a multi-axis sample stage 30, optical measurement subsystems 32 and 34, and a processing device 36. In this embodiment, for elements that are the same as or similar to those in the first embodiment, the same element reference numerals are used, and redundant descriptions are omitted.

[0041] The multi-axis sample stage 30 is similar to the multi-axis sample stage 10 of the first embodiment. The optical measurement subsystems 32 and 34 are basically similar to the optical measurement subsystem 12. The optical measurement subsystem 32 includes a light source generator 320, an incident-end optical element group 322, a light-receiving-end optical element group 324, and an optical light receiver 326. The optical measurement subsystem 34 includes a light source generator 340, an incident-end optical element group 342, a light-receiving-end optical element group 344, and an optical light receiver 346. The light source generators 320 and 340 generate measurement optical beams Lm1 and Lm2 having wavelengths within a light wavelength range covering at least from the ultraviolet band to the near-infrared band, respectively. The incident-end optical element groups 322 and 342 guide the measurement optical beams Lm1 and Lm2 to the sample under test SP, respectively. The light-receiving-end optical element groups 324 and 344 receive optical detection signals Lm1' and Lm2' generated by irradiating the sample under test SP with the measurement optical beams Lm1 and Lm2, respectively. The optical light receivers 326 and 346 receive the optical detection signals Lm1' and Lm2' guided by the light-receiving-end optical element groups 324 and 344, respectively, and generate optical spectrum information corresponding to the optical detection signals Lm1' and Lm2', respectively.

[0042] It should be noted that the difference between the second embodiment and the first embodiment is that in the second embodiment, the X-ray measurement subsystem 14 is replaced by the optical measurement subsystem 34. As can be understood from FIG. 7, the X-axis and the Y-axis form a reference plane, the optical measurement subsystem 32 is projected onto the reference plane to form an optical measurement path OP1, the optical measurement subsystem 34 is projected onto the reference plane to form an optical measurement path OP2, and the optical measurement path OP1 and the optical measurement path OP2 are perpendicular to each other. In this way, the composite semiconductor inspection system 3 provided by the present invention can achieve anisotropic measurement requirements. For example, when the optical measurement subsystem 32 measures, the optical measurement subsystem 34 can measure at a specific azimuth angle Φ at the same time, and achieve simultaneous measurement in different directions. In this way, the throughput of measurement data can be greatly improved, and the time required for generating optical spectrum information can be reduced. It is conceivable that the isotropic measurement requirements can also be achieved by controlling the optical measurement subsystems 32 and 34 to make the measurement conditions consistent.

[0043] On the other hand, the light source generator 320 and the optical light receiver 326 are arranged on the optical rotation mechanism 328, and the light source generator 340 and the optical light receiver 346 are arranged on the optical rotation mechanism 348. The optical rotation mechanisms 328 and 348 may each include one or more robotic arms. Each robotic arm may have degrees of freedom in a plurality of directions. Therefore, the light source generators 320 and 340 and the optical light receivers 326 and 346 can rotate around the sample to be inspected SP simultaneously or separately.

[0044] Furthermore, although two optical measurement subsystems 32 and 34 are adopted in this embodiment, the present invention is not limited thereto. The number of optical measurement subsystems can be designed according to the needs of the user. Furthermore, the numbers of the light source generator, the incident-end optical element group, the receiving-end optical element group, and the optical light receiver are not limited to the numbers shown in FIGS. 5 to 7. For example, only one light source generator and one incident-end optical element group may be installed, and a plurality of receiving-end optical element groups and optical light receivers may be installed.

[0045] Furthermore, similar to the first embodiment, the processing device 36 may execute a fitting analysis process based on the optical spectrum information generated by the optical measurement subsystems 32 and 34, and obtain the structural parameters of the sample under test SP as the analysis result. When the processing device 36 executes the fitting analysis process, it may include inputting the generated optical spectrum information into a neural network model 2 as shown in FIG. 4. Since the details of the data processing by the neural network model 2 are similar to those of the first embodiment, duplicate descriptions are omitted here. Third Embodiment

[0046] FIG. 8 is a functional block diagram of a compound semiconductor inspection system according to the third embodiment of the present invention. FIG. 9 is a schematic system configuration diagram of a compound semiconductor inspection system according to the third embodiment of the present invention. FIG. 10 is a plan view of the measurement structure of a compound semiconductor inspection system according to the third embodiment of the present invention. The third embodiment of the present invention further provides a compound semiconductor inspection system 4 including a multi-axis sample stage 40, X-ray measurement subsystems 42 and 44, and a processing device 46. In this embodiment, for the same or similar elements as those in the first embodiment, the same element symbols are used, and duplicate descriptions are omitted.

[0047] The multi-axis sample stage 40 is similar to the multi-axis sample stage 10 of the first embodiment. The X-ray measurement subsystems 42 and 44 are basically similar to the X-ray measurement subsystem 14. The X-ray measurement subsystem 42 includes an X-ray generator 420, an X-ray optical element group 422, and an X-ray detector 424. The X-ray measurement subsystem 44 includes an X-ray generator 440, an X-ray optical element group 442, and an X-ray detector 444. The X-ray generators 420 and 440 generate measurement X-ray beams Lx1 and Lx2, respectively. For example, it is a radiation beam having a wavelength range larger than 0.1 nanometer, and examples include a hard X-ray beam, a soft X-ray beam, or a gamma ray beam.

[0048] When the X-ray beams Lx1 and Lx2 for measurement are irradiated onto the sample under test SP, X-ray signals to be detected Lx1' and Lx2' are generated by reflection, diffraction, scattering or transmission according to different incident angles. By arranging the X-ray detectors 424 and 444 at appropriate positions, the above-mentioned X-ray signals to be detected Lx1' and Lx2' generated by reflection, diffraction, scattering or transmission can be received, and corresponding X-ray spectrum information can be generated.

[0049] It should be noted that the difference between the third embodiment and the first embodiment is that in the third embodiment, the optical measurement subsystem 12 is replaced by the X-ray measurement subsystem 42. As can be understood from FIG. 10, the X-axis and the Y-axis form a reference plane. The X-ray measurement subsystem 42 is projected onto the reference plane to form an X-ray measurement path XP1, and the X-ray measurement subsystem 44 is projected onto the reference plane to form an X-ray measurement path XP2, and the X-ray measurement path XP1 and the X-ray measurement path XP2 are perpendicular to each other. In this way, the composite semiconductor inspection system 4 provided by the present invention can achieve anisotropic measurement requirements. For example, when the X-ray measurement subsystem 42 performs measurement, the X-ray measurement subsystem 44 can simultaneously perform measurement at a specific azimuth angle Φ, and achieve simultaneous measurement in different directions. In this way, the throughput of measurement data can be significantly improved, and the time required for generating X-ray spectrum information can be reduced. It is considered that the isotropic measurement requirements can also be achieved by controlling the X-ray measurement subsystems 42 and 44 to have consistency in measurement conditions.

[0050] On the other hand, the X-ray generator 420 and the X-ray detector 424 may be arranged on the X-ray rotation mechanism 426, and the X-ray generator 440 and the X-ray detector 444 may be arranged on the X-ray rotation mechanism 446. The X-ray rotation mechanisms 426 and 446 may each include one or more robotic arms. Each robotic arm may have degrees of freedom in a plurality of directions. Therefore, the X-ray generators 420 and 440 and the X-ray detectors 424 and 444 can rotate around the sample under test SP simultaneously or separately.

[0051] Furthermore, in this embodiment, two X-ray measurement subsystems 42 and 44 are adopted, but the present invention is not limited thereto. The number of X-ray measurement subsystems can be designed according to the needs of the user. Furthermore, the number of X-ray generators, X-ray optical element groups, and X-ray detectors is not limited to the numbers shown in FIGS. 8 to 10. For example, in order to simultaneously acquire X-ray detected signals generated by reflection, diffraction, scattering, and fluorescence excitation, only one X-ray generator and one X-ray optical element group may be installed, and a plurality of X-ray detectors may be installed.

[0052] Furthermore, similar to the first embodiment, the processing device 46 may execute a fitting analysis process based on the X-ray spectrum information generated by the X-ray measurement subsystems 42 and 44, and obtain the structural parameters of the sample under test SP as the analysis result. When the processing device 46 executes the fitting analysis process, it may include inputting the generated X-ray spectrum information into the neural network model 2 as shown in FIG. 4. Since the details of the data processing by the neural network model 2 are similar to those of the first embodiment, the overlapping descriptions are omitted here. Beneficial effects of the embodiment

[0053] One of the beneficial effects of the present invention is that in the composite semiconductor inspection system provided by the present invention, the X-ray measurement technology and the optical measurement technology are integrated, and the machine learning of the neural network is incorporated for result analysis, so that the information obtained from the X-ray measurement can be fed back to the optical measurement model to obtain more accurate analysis results. At the same time, this composite semiconductor inspection system combines the penetrability of the X-ray measurement technology and the high speed of the optical measurement technology to provide an all-round and high-efficiency measurement solution, and can analyze various complex semiconductor elements.

[0054] The content disclosed above is only a preferred embodiment of the present invention and does not limit the scope of the claims of the present invention. Therefore, all equivalent technical changes made using the specification and drawings of the present invention are included in the scope of the claims for utility model registration.

Description of reference numerals

[0055] 1, 3, 4: Compound semiconductor inspection system 10, 30, 40: Multi-axis sample stage 12, 32, 34: Optical measurement subsystem 120, 320, 340: Light source generator 122, 322, 342: Incident-end optical element group 124, 324, 344: Receiving-end optical element group 126, 326, 346: Optical receiver 14, 42, 44: X-ray measurement subsystem 140, 420, 440: X-ray generator 142, 422, 442: X-ray optical element group 144, 424, 444: X-ray detector 146, 426, 446: X-ray rotation mechanism 16, 36, 46: Processing device SP: Specimen to be inspected X, Y, Z: Axes θ, Φ: Azimuth angles Lm, Lm1, Lm2: Measurement light beams Lm’, Lm1’, Lm2’: Optical inspection signals 128, 328, 348: Optical rotation mechanism Lx, Lx1, Lx2: Measurement X-ray beams Lx’, Lx1’, Lx2’: X-ray inspection signals OP, OP1, OP2: Optical measurement paths XP, XP1, XP2: X-ray measurement paths 2: Neural network model 20: Pre-machine learning structure 22: Measurement data analysis structure 200, 220: Input layer 202, 222: Hidden layer 204, 224: Output layer

Claims

1. a multi-axis sample stage, an optical metrology subsystem, an X-ray metrology subsystem, and a processing unit; The multi-axis sample stage supports a test sample, the optical measurement subsystem includes a light source generator, an input optical element group, a receiving optical element group, and an optical receiver; The light source generator generates a measurement light beam having a wavelength within a light wavelength range covering at least an ultraviolet band to a near infrared band; the entrance optical element group guides the measurement light beam to the test sample; the light-receiving end optical element group receives an optical test signal generated by irradiating the test sample with the measurement light beam; the optical receiver receives the optical test signal guided by the receiving end optical element group and generates optical spectrum information corresponding to the optical test signal; the X-ray measurement subsystem includes an X-ray generator, an X-ray optical element group, and an X-ray detector; the source generator generates a measurement X-ray beam having a wavelength range greater than 0.1 nanometers; the X-ray optics group guides the measurement X-ray beam to the test sample; the X-ray detector receives an X-ray test signal generated by irradiating the test sample with the measurement X-ray beam, and generates X-ray spectrum information corresponding to the X-ray test signal; the processing device is configured to perform a fitting analysis process based on the optical spectrum information and the X-ray spectrum information, and obtain one or more structural parameters of the test sample as an analysis result.

1. An integrated semiconductor inspection system comprising:

2. the multi-axis sample stage has a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism moving the test sample along one or more of a first axis, a second axis, and a third axis, and the stage rotating mechanism rotating the test sample along one or more of the first axis, the second axis, and the third axis; 10. The integrated semiconductor inspection system of claim 1.

3. the processing device is further configured to control the movement and / or rotation of the multi-axis sample stage such that the optical receiver receives a plurality of the optical test signals generated at a plurality of optical measurement positions and / or a plurality of first optical measurement angles and generates a plurality of the optical spectrum information corresponding to the plurality of the optical test signals, and the X-ray detector receives a plurality of the X-ray test signals and generates a plurality of the X-ray spectrum information corresponding to the plurality of the X-ray test signals.

3. The integrated semiconductor inspection system of claim 2.

4. The light source generator and the optical receiver are disposed on an optical rotation mechanism so as to rotate around the test sample simultaneously or separately, and the X-ray generator and the X-ray detector are disposed on an X-ray rotation mechanism so as to rotate around the test sample simultaneously or separately.

4. The integrated semiconductor inspection system of claim 3.

5. the processing device is further configured to control rotation of the optical rotation mechanism such that the light source generator directs the measurement light beam in a plurality of directions, the optical receiver receives a plurality of generated optical test signals at a plurality of second optical measurement angles, and generates a plurality of optical spectrum information corresponding to the plurality of optical test signals; the processing device is configured to cause the X-ray generator to emit the measurement X-ray beam in a plurality of directions, cause the X-ray detector to receive the generated plurality of X-ray test signals at a plurality of X-ray measurement angles, and generate a plurality of pieces of X-ray spectrum information corresponding to the plurality of X-ray test signals, and further to control rotation of the X-ray rotation mechanism.

5. The integrated semiconductor inspection system of claim 4.

6. the processing device is configured to control the rotation of the optical rotation mechanism and / or the stage rotation mechanism so that the measurement light beam is irradiated onto the test sample, and the optical test signal generated by reflection or scattering is received by the optical receiver; the processing device is configured to control the X-ray detector to receive the X-ray test signal generated by the irradiation of the measurement X-ray beam on the test sample and the X-ray detector to receive the X-ray test signal generated by reflection, diffraction, scattering, or transmission, and to control the rotation of the X-ray rotation mechanism and / or the stage rotation mechanism.

6. The integrated semiconductor inspection system of claim 5.

7. the first axis and the second axis form a reference plane, the optical metrology subsystem is projected onto the reference plane to form an optical measurement path, the X-ray metrology subsystem is projected onto the reference plane to form an X-ray measurement path, and the optical measurement path and the X-ray measurement path are perpendicular to each other.

3. The integrated semiconductor inspection system of claim 2.

8. the incident end optical element group includes one or more first optical elements, each of which is a first optical filter, a first optical collimator, a first optical polarizer, or a first optical compensator; and the receiving end optical element group includes a plurality of second optical elements, each of which is a second optical filter, a second optical collimator, a second optical polarizer, or a second optical compensator.

10. The integrated semiconductor inspection system of claim 1.

9. the X-ray optical element group includes one or more X-ray optical elements, and each of the X-ray optical elements is an X-ray mirror group having a multilayer structure, an X-ray slit, or an X-ray optical collimator; 10. The integrated semiconductor inspection system of claim 1.

10. The one or more structural parameters include one or more of thickness, roughness, density, critical dimension, line edge roughness, refractive index, and extinction coefficient; 10. The integrated semiconductor inspection system of claim 1.

11. the fitting analysis process includes configuring the processing device to input the optical spectrum information and the X-ray spectrum information into a neural network model; The neural network model comprises a pre-machine learning structure and a measurement data analysis structure; The pre-machine learning structure is trained to generate a plurality of optical prediction results and a plurality of X-ray prediction results based on a target structure and a plurality of preset structure parameters corresponding to the target structure; the metrology data analysis structure is trained to model and analyze the object test structure based on the plurality of optical prediction results, the plurality of X-ray prediction results, the optical spectrum information, and the X-ray spectrum information, and generate one or more of the structural parameters of the test sample; 10. The integrated semiconductor inspection system of claim 1.

12. a multi-axis sample stage, at least two optical metrology subsystems, and a processing device; The multi-axis sample stage supports a test sample, Each of the optical metrology subsystems includes a light source generator, an input optical element group, a receiving optical element group, and an optical receiver; The light source generator generates a measurement light beam having a wavelength within a light wavelength range covering at least an ultraviolet band to a near infrared band; the entrance optical element group guides the measurement light beam to the test sample; the light-receiving end optical element group receives an optical test signal generated by irradiating the test sample with the measurement light beam; the optical receiver receives the optical test signal guided by the receiving end optical element group and generates optical spectrum information corresponding to the optical test signal; the processing device is configured to perform a fitting analysis process based on the optical spectrum information generated by the at least two optical metrology subsystems, and obtain one or more structural parameters of the test sample as an analysis result.

1. An integrated semiconductor inspection system comprising:

13. the multi-axis sample stage has a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism moving the test sample along one or more of a first axis, a second axis, and a third axis, and the stage rotating mechanism rotating the test sample along one or more of the first axis, the second axis, and the third axis; The integrated semiconductor inspection system of claim 12.

14. the processing device is further configured to control the movement and / or rotation of the multi-axis sample stage such that the optical receiver of each of the optical metrology subsystems receives a plurality of the optical test signals generated at a plurality of optical measurement positions and / or a plurality of first optical measurement angles, and generate a plurality of the optical spectrum information corresponding to the plurality of the optical test signals. The integrated semiconductor inspection system of claim 13.

15. the light source generator and the optical receiver of each of the optical metrology subsystems are disposed on an optical rotation mechanism to rotate simultaneously or separately around the test sample; 15. The integrated semiconductor inspection system of claim 14.

16. the processing device is further configured to control rotation of each of the optical rotation mechanisms such that the light source generator of each of the optical metrology subsystems directs the measurement light beam in a plurality of directions, the optical receiver receives a plurality of generated optical test signals at a plurality of second optical measurement angles, and generates a plurality of optical spectrum information corresponding to the plurality of optical test signals.

16. The integrated semiconductor inspection system of claim 15.

17. the processing device is configured to control the measurement light beam to be irradiated onto the test sample, and the optical test signal generated by reflection or scattering is received by the optical receiver of each of the optical measurement subsystems, and to control rotation of the optical rotation mechanism and / or the stage rotation mechanism.

20. The integrated semiconductor inspection system of claim 16.

18. the first axis and the second axis form a reference plane, one of the optical metrology subsystems is projected onto the reference plane to form a first optical measurement path, and the other of the optical metrology subsystems is projected onto the reference plane to form a second optical measurement path, and the first optical measurement path and the second optical measurement path are perpendicular to each other. The integrated semiconductor inspection system of claim 13.

19. The fitting analysis process includes configuring the processing device to input the generated optical spectrum information into a neural network model; The neural network model comprises a pre-machine learning structure and a measurement data analysis structure; The pre-machine learning structure is trained to generate a plurality of optical prediction results based on a target structure and a plurality of preset structure parameters corresponding to the target structure; the metrology data analysis structure is trained to model and analyze the object test structure based on the plurality of optical prediction results and the optical spectrum information, and generate one or more of the structural parameters of the test sample; 10. The integrated semiconductor inspection system of claim 1.

20. a multi-axis sample stage, at least two x-ray metrology subsystems, and a processing device; The multi-axis sample stage supports a test sample, Each of the X-ray metrology subsystems includes an X-ray generator, an X-ray optical element group, and an X-ray detector; the X-ray generator produces a measurement X-ray beam having a wavelength range greater than 0.1 nanometers; the X-ray optics group guides the measurement X-ray beam to the test sample; the X-ray detector receives an X-ray test signal generated by irradiating the test sample with the measurement X-ray beam, and generates X-ray spectrum information corresponding to the X-ray test signal; the processing device is configured to perform a fitting analysis process based on the X-ray spectrum information generated by the at least two X-ray measurement subsystems, and obtain one or more structural parameters of the test sample as an analysis result.

1. An integrated semiconductor inspection system comprising:

21. the multi-axis sample stage has a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism moving the test sample along one or more of a first axis, a second axis, and a third axis, and the stage rotating mechanism rotating the test sample along one or more of the first axis, the second axis, and the third axis; 21. The integrated semiconductor inspection system of claim 20.

22. the processing device is further configured to control the movement and / or rotation of the multi-axis sample stage such that the X-ray detector of each of the X-ray metrology subsystems receives a plurality of the X-ray test signals and generates a plurality of the X-ray spectrum information corresponding to the plurality of the X-ray test signals.

22. The integrated semiconductor inspection system of claim 21.

23. the X-ray generator and the X-ray detector of each of the X-ray metrology subsystems are disposed on an X-ray rotation mechanism so as to rotate simultaneously or separately around the test sample; 23. The integrated semiconductor inspection system of claim 22.

24. the processing device is further configured to control rotation of the X-ray rotation mechanism so that the X-ray generator of each of the X-ray measurement subsystems causes the measurement X-ray beams to be incident in a plurality of directions, the X-ray detector of each of the X-ray measurement subsystems receives a plurality of generated X-ray test signals at a plurality of second X-ray measurement angles, and generates a plurality of pieces of X-ray spectrum information corresponding to the plurality of X-ray test signals; the processing device is configured to cause the X-ray generator to emit the measurement X-ray beam in a plurality of directions, cause the X-ray detector to receive the generated plurality of X-ray test signals at a plurality of X-ray measurement angles, and generate a plurality of pieces of X-ray spectrum information corresponding to the plurality of X-ray test signals, and further to control rotation of the X-ray rotation mechanism.

24. The integrated semiconductor inspection system of claim 23.

25. the processing device is configured to control the rotation of the X-ray rotation mechanism and / or the stage rotation mechanism so that the measurement X-ray beam is irradiated onto the test sample, and the X-ray test signal generated by reflection or scattering is received by the X-ray detector; the processing device is configured to control the X-ray detector to receive the X-ray test signal generated by the irradiation of the measurement X-ray beam on the test sample and the X-ray detector to receive the X-ray test signal generated by reflection, diffraction, scattering, or transmission, and to control the rotation of the X-ray rotation mechanism and / or the stage rotation mechanism.

25. The integrated semiconductor inspection system of claim 24.

26. the first axis and the second axis form a reference plane, one of the X-ray measurement subsystems is projected onto the reference plane to form a first X-ray measurement path, and the other of the X-ray measurement subsystems is projected onto the reference plane to form a second X-ray measurement path, and the first X-ray measurement path and the second X-ray measurement path are perpendicular to each other.

22. The integrated semiconductor inspection system of claim 21.

27. the X-ray optical element group of each of the X-ray measurement subsystems includes one or more X-ray optical elements, and each of the X-ray optical elements is an X-ray mirror group having a multilayer structure, an X-ray slit, or an X-ray optical collimator.

21. The integrated semiconductor inspection system of claim 20.

28. The fitting analysis process includes configuring the processing device to input the generated X-ray spectrum information into a neural network model; The neural network model comprises a pre-machine learning structure and a measurement data analysis structure; The pre-machine learning structure is trained to generate a plurality of x-ray prediction results based on a target structure and a plurality of preset structure parameters corresponding to the target structure; the metrology data analysis structure is trained to model and analyze the object test structure based on the X-ray prediction results and the X-ray spectrum information to generate one or more of the structural parameters of the test sample; 21. The integrated semiconductor inspection system of claim 20.

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