Composition for polishing

Abstract

To provide means capable of achieving high polishing speeds on silicon wafers.SOLUTION: A polishing composition used for polishing silicon wafers includes a nitrogen-containing organic compound having an energy level on the highest occupied molecular orbital (HOMO) of -9.50 eV or higher, and water.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present invention relates to a polishing composition. [Background technology]

[0002] Wafer materials made of metals or semiconductors, such as silicon, aluminum, nickel, tungsten, copper, tantalum, titanium, stainless steel, or alloys thereof; or compound semiconductors, such as silicon carbide, gallium nitride, or gallium arsenide, are polished to meet various requirements, such as flattening, and are used in a variety of fields.

[0003] Mirror wafers, which have high-quality mirror surfaces that are highly flat and free of scratches and impurities, are used in semiconductor devices such as integrated circuits, and various research projects are being conducted on technologies for polishing single crystal silicon substrates (silicon wafers) to produce these mirror wafers.

[0004] For example, Patent Document 1 proposes a polishing composition containing colloidal silica, a weak acid salt, and a quaternary ammonium compound, in which the contents of the weak acid salt and the quaternary ammonium compound are within specific ranges. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] International Publication No. 2015 / 102101 Summary of the Invention [Problem to be solved by the invention]

[0006] However, with the technique described in Patent Document 1, there is a demand for further improvement in the polishing rate.

[0007] Therefore, an object of the present invention is to provide a means for realizing a high polishing rate in polishing silicon wafers. [Means for solving the problem]

[0008] The above problem is solved by a polishing composition used for polishing silicon wafers, the polishing composition comprising: a nitrogen-containing organic compound having an energy level of the highest occupied molecular orbital (HOMO) of −9.50 eV or higher; and water. Effect of the Invention

[0009] According to the present invention, there is provided a means for realizing a high polishing rate in polishing a silicon wafer. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments of the present invention will be described. Note that the present invention is not limited to only the following embodiments. In addition, unless otherwise specified, the operation and measurement of physical properties are performed under the conditions of room temperature (range of 20°C to 25°C) and relative humidity of 40% RH to 50% RH.

[0011] The polishing composition of the present invention will be described in detail below.

[0012] [Polishing composition] One embodiment of the present invention is a polishing composition used for polishing silicon wafers, which comprises a nitrogen-containing organic compound having a highest occupied molecular orbital (HOMO) energy level (hereinafter also simply referred to as "HOMO level") of -9.50 eV or more, and water. The polishing composition of the present invention can polish silicon wafers at a high polishing rate.

[0013] The mechanism by which the polishing composition of the present invention provides the above-mentioned effects is unclear, but is believed to be as follows. The nitrogen-containing organic compound of the present invention has a HOMO level of -9.50 eV or higher, and the unshared electron pair of the nitrogen atom has high nucleophilicity. This unshared electron pair nucleophilically attacks the silicon wafer surface, weakening the silicon-silicon bond of the silicon wafer. This embrittles the film surface of the silicon wafer (i.e., the polishing surface), and is believed to improve the polishing speed of the silicon wafer.

[0014] It should be noted that the above mechanism is based on speculation, and whether it is correct or not does not affect the technical scope of the present application.

[0015] [Polished object] The polishing composition according to the present invention is used for polishing silicon wafers. Here, the silicon wafer may be made of elemental silicon such as a single crystal silicon substrate or a polycrystalline silicon substrate, or may be composed of a layer made of elemental silicon and other layers. It is also acceptable for the silicon wafer to contain elements other than silicon at the same content as impurities. Therefore, the silicon wafer may contain a p-type dopant such as boron or an n-type dopant such as phosphorus. The crystal orientation of the silicon wafer is not particularly limited, <100> , <110> , <111> The resistivity of the silicon wafer is not particularly limited. The thickness of the silicon wafer is, for example, 600 to 1000 μm, but is not particularly limited. The diameter of the silicon wafer is not limited, and the present invention can be applied to wafers of any diameter.

[0016] Next, the components of the polishing composition of the present invention will be described.

[0017] [Nitrogen-containing organic compounds] The polishing composition according to the present invention contains a nitrogen-containing organic compound having a HOMO level of -9.50 eV or more. The nitrogen-containing organic compound performs a nucleophilic attack on the surface of a silicon wafer, weakening the silicon-silicon bond of the silicon wafer. This weakens the film surface (i.e., the polishing surface) of the silicon wafer, and is believed to improve the polishing rate of the silicon wafer.

[0018] In this specification, the HOMO level is a value calculated using the PM7 (Parametric Method 7) method, which is a Hamiltonian of the semi-empirical molecular orbital program MOPAC.

[0019] If the HOMO level of the nitrogen-containing organic compound is less than -9.50 eV, the polishing rate of the silicon wafer decreases. The HOMO level is preferably -9.30 eV or more, more preferably -9.20 eV or more. The upper limit of the HOMO level is not particularly limited, but is usually 0 eV or less.

[0020] The number of nitrogen atoms contained in the nitrogen-containing organic compound is not particularly limited as long as it is 1 or more. In the technology disclosed herein, the nitrogen-containing organic compound preferably contains 1 to 10 nitrogen atoms in the molecule. The lower limit of the number of nitrogen atoms contained in the nitrogen-containing organic compound may be 1 or more, 2 or more, 3 or more, or 4 or more. The upper limit of the number of nitrogen atoms contained in the nitrogen-containing organic compound may be 10 or less, 8 or less, 6 or less, 5 or less, or 4 or less.

[0021] Here, the nitrogen atom contained in the nitrogen-containing organic compound may be in a saturated heterocycle or outside the saturated heterocycle. The lower limit of the number of nitrogen atoms contained in the saturated heterocycle may be 1 or more, 2 or more, 3 or more, or 4 or more. The upper limit of the number of nitrogen atoms contained in the saturated heterocycle may be 5 or less, 4 or less, 3 or less, or 2 or less. The lower limit of the number of nitrogen atoms contained outside the saturated heterocycle may be 1 or more, 2 or more, 3 or more, or 4 or more. The upper limit of the number of nitrogen atoms contained outside the saturated heterocycle may be 5 or less, 4 or less, 3 or less, or 2 or less.

[0022] Examples of nitrogen-containing organic compounds that can be used in the present invention are shown below. The numbers in parentheses indicate the values ​​of the HOMO levels.

[0023] Diethylamine (-8.91 eV), ethylenediamine (-9.45 eV), 1-(3-aminopropyl)imidazole (-9.42 eV), piperazine (-8.96 eV), N-(2-aminoethyl)piperazine (-8.90 eV), 1,4-bis(3-aminopropyl)piperazine (-8.59 eV), 4-aminopiperidine (-9.17 eV), cis-1,2-cyclohexanediamine (-9.13 eV), 1,4-diazabicyclo[2,2,2]octane (DABCO) (-8.65 eV), Examples include triethylenetetramine (-8.87 eV), 1,8-diazabicyclo[5,4,0]undec-7-ene (DBU) (-8.55 eV), 1,5-diazabicyclo[4,3,0]non-5-ene (DBN) (-8.70 eV), quinuclidine (1-azabicyclo[2,2,2]octane) (-8.91 eV), homoquinuclidine (1-azabicyclo[3,2,2]nonane) (-8.57 eV), and granatan (9-methyl-9-azabicyclo[3,3,1]nonane) (-8.50 eV).

[0024] The nitrogen-containing organic compounds may be used alone or in combination of two or more. The nitrogen-containing organic compounds may be commercially available products or synthetic products.

[0025] Among these nitrogen-containing organic compounds, compounds having a saturated hydrocarbon ring group or a saturated heterocyclic group containing one nitrogen atom are preferred. It is believed that such compounds do not have unsaturated bonds, and thus the lone pair of electrons on the nitrogen atom is localized, resulting in more efficient nucleophilic attack on the silicon wafer surface. Therefore, it is believed that the polishing speed of silicon wafers can be further increased.

[0026] The compound having a saturated hydrocarbon ring group or a saturated heterocyclic group containing one nitrogen atom may be a monocyclic compound or a polycyclic compound. The form of the bond between the rings of the polycyclic compound is not particularly limited and may be a ring assembly, a bridge, a condensation, a spiro condensation, etc.

[0027] Examples of the saturated hydrocarbon ring include a cyclopropane ring, a cyclobutane ring, a cyclopentane ring, a cyclohexane ring, a cycloheptane ring, a cyclooctane ring, a norbornane ring, a bornane ring, an adamantane ring, a tetrahydronaphthalene ring, and a bicyclo[2.2.2]octane ring.

[0028] Examples of the saturated heterocycle containing one nitrogen atom include an azetidine ring, a pyrrolidine ring, a morpholine ring, a thiomorpholine ring, a piperidine ring, a hexahydroazepine ring, an azabicyclo[3.2.1]octane ring, a 1,4-hexahydrooxazepine ring, an octahydroazocine ring, an octahydroindole ring, a 3-azabicyclo[3.1.0]hexane ring, a 1-azabicyclo[2,2,2]octane ring, a 1-azabicyclo[3,2,2]nonane ring, and a 9-azabicyclo[3,3,1]nonane ring.

[0029] More specific examples of nitrogen-containing organic compounds having a saturated hydrocarbon ring group or a saturated heterocyclic group containing one nitrogen atom include 4-aminopiperidine (-9.17 eV), cis-1,2-cyclohexanediamine (-9.13 eV), quinuclidine (1-azabicyclo[2,2,2]octane) (-8.91 eV), homoquinuclidine (1-azabicyclo[3,2,2]nonane) (-8.57 eV), and granatan (9-methyl-9-azabicyclo[3,3,1]nonane) (-8.50 eV).

[0030] When the polishing composition is used as it is as a polishing liquid, the lower limit of the content (concentration) of the nitrogen-containing organic compound is preferably 0.20 mM (M is mol / L) or more, more preferably 0.50 mM or more, and even more preferably 1.00 mM or more, based on the total amount of the polishing composition. When the polishing composition is used as it is as a polishing liquid, the upper limit of the content (concentration) of the nitrogen-containing organic compound is preferably 10.0 mM or less, more preferably 5.0 mM or less, and even more preferably 3.0 mM or less, based on the total amount of the polishing composition. Within such a content range, silicon wafers can be polished at a high polishing rate.

[0031] In addition, when the polishing composition is diluted and used for polishing, that is, when the polishing composition is a concentrated liquid, the upper limit of the content of the nitrogen-containing organic compound is preferably 100 mM or less, more preferably 50 mM or less, based on the total amount of the polishing composition, from the viewpoint of storage stability, etc. In addition, from the viewpoint of utilizing the advantage of making it a concentrated liquid, the lower limit of the content of the nitrogen-containing organic compound is preferably 10 mM or more, more preferably 20 mM or more, based on the total amount of the polishing composition.

[0032] When two or more nitrogen-containing organic compounds are used in combination, the above content refers to the total content of the two or more nitrogen-containing organic compounds.

[0033] The content of the nitrogen-containing organic compound can also be specified by the relative relationship with the abrasive grain contained in the polishing composition.Specifically, the content of the nitrogen-containing organic compound in the polishing composition is suitable to be about 0.01 parts by mass or more with respect to 100 parts by mass of abrasive grain, and from the viewpoint of improving the polishing speed, it is preferably about 0.1 parts by mass or more, more preferably about 0.5 parts by mass or more (for example, about 0.6 parts by mass or more).In addition, from the viewpoint of improving the quality of the polished surface, the content of the nitrogen-containing organic compound is suitable to be about 10 parts by mass or less with respect to 100 parts by mass of abrasive grain, and is preferably about 5 parts by mass or less, more preferably about 3 parts by mass or less (for example, about 2.5 parts by mass or less).

[0034] The content of the nitrogen-containing organic compound can also be specified by its relative relationship with the content of the basic compound contained in the polishing composition. B ) relative to the content of nitrogen-containing organic compounds (C N ) ratio (C N / C B ) is suitably 0.001 or more, and from the viewpoint of improving the polishing rate, it is preferably 0.01 or more, more preferably 0.05 or more (for example, 0.1 or more). Also, from the viewpoint of improving the quality of the polished surface, the above ratio (C N / C B ) is suitably 1000 or less, preferably 200 or less, more preferably 100 or less, and may be 20 or less (for example, 10 or less).

[0035] [water] The polishing composition according to the present invention contains water as a dispersion medium for dispersing or dissolving each component. It is preferable that the water contains as few impurities as possible in order to prevent contamination of the silicon wafer and inhibition of the action of other components. For example, water having a total transition metal ion content of 100 ppb or less is preferable as such water. Here, the purity of water can be increased by, for example, removing impurity ions using ion exchange resin, removing foreign matter using a filter, distillation, or other operations. Specifically, it is preferable to use, for example, deionized water (ion-exchanged water), pure water, ultrapure water, distilled water, etc. as water.

[0036] For dispersing or dissolving each component, water and an organic solvent may be used in combination, and the organic solvent may be used alone or in combination of two or more kinds. In this case, examples of the organic solvent used include acetone, acetonitrile, ethanol, methanol, isopropanol, glycerin, ethylene glycol, propylene glycol, etc., which are organic solvents miscible with water. In addition, these organic solvents may be used without being mixed with water, and each component may be dispersed or dissolved therein, and then mixed with water.

[0037] [Abrasive grain] The polishing composition of the present invention preferably contains abrasive grains. The abrasive grains contained in the polishing composition have the effect of mechanically polishing the silicon wafer.

[0038] The abrasive grains used in the present invention may be used alone or in combination of two or more kinds. The abrasive grains may be any of inorganic particles, organic particles, and organic-inorganic composite particles. Specific examples of inorganic particles include particles made of metal oxides such as silica, alumina, ceria, and titania, silicon nitride particles, silicon carbide particles, and boron nitride particles. Specific examples of organic particles include polymethylmethacrylate (PMMA) particles. The abrasive grains may be commercially available products or synthetic products. In this specification, unless otherwise specified, the abrasive grains refer to those that are not surface-modified.

[0039] Among these abrasive grains, silica is preferred, and colloidal silica is particularly preferred.

[0040] The lower limit of the average primary particle size of the abrasive grains is preferably 10 nm or more, more preferably 15 nm or more, even more preferably 20 nm or more, even more preferably 30 nm or more, even more preferably 40 nm or more, and particularly preferably 50 nm or more. If it is within such a range, it can be used suitably in the rough polishing process because it can maintain a high polishing rate. Moreover, the upper limit of the average primary particle size of the abrasive grains is preferably 200 nm or less, more preferably 150 nm or less, and even more preferably 100 nm or less. In some embodiments, the average primary particle size may be 75 nm or less, or may be 60 nm or less. If it is within such a range, it is possible to further suppress the occurrence of defects on the surface of the silicon wafer after polishing. The average primary particle size of the abrasive grains is calculated based on the specific surface area of ​​the abrasive grains measured by the BET method, for example.

[0041] The lower limit of the average secondary particle diameter of the abrasive grains is preferably 15 nm or more, more preferably 30 nm or more, even more preferably 40 nm or more, even more preferably 50 nm or more, and particularly preferably 60 nm or more (e.g., 80 nm or more). Within such a range, a high polishing rate can be maintained. Furthermore, the upper limit of the average secondary particle diameter of the abrasive grains is preferably 300 nm or less, more preferably 260 nm or less, even more preferably 220 nm or less, and particularly preferably 150 nm or less (e.g., 130 nm or less). Within such a range, defects on the surface of the silicon wafer after polishing can be further suppressed. The average secondary particle diameter of the abrasive grains can be measured by dynamic light scattering. For example, it can be measured using a model "FPAR-1000" manufactured by Otsuka Electronics Co., Ltd. or an equivalent product.

[0042] The average degree of association of the abrasive grains is preferably 1.2 or more, more preferably 1.4 or more, and even more preferably 1.5 or more. Here, the average degree of association is obtained by dividing the value of the average secondary particle diameter of the abrasive grains by the value of the average primary particle diameter. If the average degree of association of the abrasive grains is 1.2 or more, it has an advantageous effect of improving the polishing speed, and is therefore preferable. In addition, the average degree of association of the abrasive grains is preferably 4 or less, more preferably 3.5 or less, and even more preferably 3 or less. As the average degree of association of the abrasive grains decreases, it becomes easier to obtain a polished surface with fewer surface defects by polishing an object to be polished using the polishing composition.

[0043] When the polishing composition is used as it is as a polishing liquid, the content of the abrasive grains is preferably 0.1 mass% or more, more preferably 0.4 mass% or more, and even more preferably 1.0 mass% or more, based on the polishing composition. By increasing the content of the abrasive grains, the polishing speed is improved. In addition, when the polishing composition is used as it is as a polishing liquid, the content of the abrasive grains is usually 10 mass% or less, preferably 5 mass% or less, more preferably 3 mass% or less, and even more preferably 2 mass% or less, from the viewpoint of preventing scratches, etc. It is also preferable to reduce the content of the abrasive grains from the viewpoint of economic efficiency.

[0044] In addition, when the polishing composition is diluted before use for polishing, i.e., when the polishing composition is a concentrated liquid, the content of the abrasive grains is usually preferably 50% by mass or less, and more preferably 40% by mass or less, relative to the polishing composition, from the viewpoints of storage stability, filterability, etc. In addition, from the viewpoint of utilizing the advantages of forming the concentrated liquid, the content of the abrasive grains is preferably 1% by mass or more, and more preferably 5% by mass or more.

[0045] When two or more types of abrasive grains are used in combination, the above content refers to the total content of the two or more types of abrasive grains.

[0046] [Basic compounds] The polishing composition according to the present invention preferably contains a basic compound. In this specification, the basic compound refers to a compound that has the function of increasing the pH of the polishing composition by being added to the composition, and is a compound other than the nitrogen-containing organic compound having a HOMO level of -9.50 eV or more. The basic compound acts to chemically polish the surface to be polished, and can contribute to improving the polishing rate. In addition, the basic compound can be useful for improving the dispersion stability of the polishing composition.

[0047] The basic compounds used in the present invention can be used alone or in combination of two or more kinds. Examples of basic compounds include inorganic basic compounds containing nitrogen, hydroxides of alkali metals or Group 2 metals, various carbonates and hydrogen carbonates, quaternary ammonium hydroxides or their salts, ammonia, amines, etc. Specific examples of alkali metal hydroxides include potassium hydroxide and sodium hydroxide. Specific examples of carbonates or hydrogen carbonates include ammonium hydrogen carbonate, ammonium carbonate, potassium hydrogen carbonate, potassium carbonate, sodium hydrogen carbonate, sodium carbonate, etc. Specific examples of quaternary ammonium hydroxides or their salts include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrabutylammonium hydroxide, etc. Specific examples of amines include hexamethylenetetramine, azoles such as imidazole and triazole, and pyridine.

[0048] From the viewpoint of improving the polishing rate, etc., a preferred basic compound is at least one selected from the group consisting of ammonia, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, ammonium hydrogen carbonate, ammonium carbonate, potassium hydrogen carbonate, potassium carbonate, sodium hydrogen carbonate, and sodium carbonate. Among them, a more preferred basic compound is at least one selected from the group consisting of ammonia, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, and potassium carbonate.

[0049] When the polishing composition is used as it is as a polishing liquid, the lower limit of the content (concentration) of the basic compound in the polishing composition is preferably 3 mM or more, more preferably 5 mM or more. Within such a range, a high polishing rate can be maintained. In addition, the stability can be improved by increasing the concentration of the basic compound. In addition, when the polishing composition is used as it is as a polishing liquid, the upper limit of the content (concentration) of the basic compound is preferably 50 mM or less, more preferably 30 mM or less, and even more preferably 10 mM or less.

[0050] In addition, when the polishing composition is diluted and used for polishing, that is, when the polishing composition is a concentrated liquid, the upper limit of the content (concentration) of the basic compound is preferably 400 mM or less, more preferably 350 mM or less, and even more preferably 300 mM or less, from the viewpoint of storage stability, filterability, etc. In addition, from the viewpoint of utilizing the advantage of making it a concentrated liquid, the lower limit of the content (concentration) of the basic compound is preferably 50 mM or more, more preferably 100 mM or more, and even more preferably 150 mM or more.

[0051] When two or more basic compounds are used in combination, the above content refers to the total content of the two or more basic compounds.

[0052] [Other ingredients] The polishing composition of the present invention may further contain, as necessary, known additives that can be used in polishing compositions, such as water-soluble polymers, surfactants, chelating agents, preservatives, and anti-fungal agents, to the extent that the effects of the present invention are not significantly impeded.

[0053] Examples of the water-soluble polymer include cellulose derivatives, starch derivatives, polymers containing oxyalkylene units, polymers containing nitrogen atoms, vinyl alcohol-based polymers, etc. Specific examples include hydroxyethyl cellulose, pullulan, random copolymers or block copolymers of ethylene oxide and propylene oxide, polyvinyl alcohol, acetalized polyvinyl alcohol, copolymers of vinyl alcohol and alkylene oxide, polyisoprene sulfonic acid, polyvinyl sulfonic acid, polyallyl sulfonic acid, polyisoamylene sulfonic acid, polystyrene sulfonate, polyacrylate, polyvinyl acetate, polyethylene glycol, polyvinyl imidazole, polyvinyl carbazole, polyvinyl pyrrolidone, polyvinyl caprolactam, polyvinyl piperidine, polyacryloyl morpholine, polyhydroxyacrylamide, etc. The water-soluble polymer can be used alone or in combination of two or more. The polishing composition disclosed herein can also be preferably implemented in an embodiment that does not substantially contain a water-soluble polymer, that is, an embodiment that does not contain a water-soluble polymer at least intentionally.

[0054] (Surfactant) The polishing composition of the present invention may further contain a surfactant such as a nonionic surfactant, a cationic surfactant or an anionic surfactant, if necessary.

[0055] The nonionic surfactant that can be used in the present invention can be used alone or in combination of two or more.The examples of nonionic surfactant include alkyl betaine, alkyl amine oxide, polyoxyethylene alkyl ether, polyoxyalkylene alkyl ether, sorbitan fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, polyoxyethylene alkyl amine, and alkyl alkanolamide.Among them, from the viewpoint of improving the dispersion stability of polishing composition, polyoxyalkylene alkyl ether is preferred, and polyoxyethylene alkyl ether is more preferred.

[0056] When the polishing composition is used as it is as a polishing liquid, the content of the nonionic surfactant is preferably 0.00001 mass% or more, more preferably 0.00002 mass% or more, and even more preferably 0.00003 mass% or more with respect to the polishing composition.Within such a range, the dispersion stability of the polishing composition is improved.When the polishing composition is used as it is as a polishing liquid, the upper limit of the content of the nonionic surfactant is appropriately 0.002 mass% or less, and from the viewpoint of maintaining a high polishing rate, it is preferably 0.001 mass% or less.

[0057] In addition, when the polishing composition is diluted and used for polishing, that is, when the polishing composition is a concentrated liquid, the content of the nonionic surfactant is usually appropriate to be 0.1 mass% or less, and more preferably 0.05 mass% or less, from the viewpoints of storage stability, filterability, etc. In addition, from the viewpoint of utilizing the advantage of making it a concentrated liquid, the content of the nonionic surfactant is preferably 0.0001 mass% or more, more preferably 0.0002 mass% or more, and even more preferably 0.0005 mass% or more.

[0058] When two or more nonionic surfactants are used in combination, the above content refers to the total content of the two or more nonionic surfactants.

[0059] (chelating agent) The chelating agent that can be included in the polishing composition can be used alone or in combination of two or more.The chelating agent can be an aminocarboxylic acid chelating agent and an organic phosphonic acid chelating agent.Examples of the aminocarboxylic acid chelating agent include ethylenediaminetetraacetic acid, sodium ethylenediaminetetraacetate, nitrilotriacetic acid, sodium nitrilotriacetate, ammonium nitrilotriacetate, hydroxyethylethylenediaminetriacetic acid, sodium hydroxyethylethylenediaminetriacetate, diethylenetriaminepentaacetic acid, sodium diethylenetriaminepentaacetate, triethylenetetraminehexaacetic acid and sodium triethylenetetraminehexaacetate. Examples of organic phosphonic acid chelating agents include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri(methylenephosphonic acid), ethylenediaminetetrakis(methylenephosphonic acid)(EDTPO), diethylenetriaminepenta(methylenephosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid and α-methylphosphonosuccinic acid.Of these, organic phosphonic acid chelating agents are more preferred. Among them, preferred are ethylenediaminetetrakis(methylenephosphonic acid), diethylenetriaminepenta(methylenephosphonic acid) and diethylenetriaminepentaacetic acid. Particularly preferred chelating agents are ethylenediaminetetrakis(methylenephosphonic acid) and diethylenetriaminepenta(methylenephosphonic acid).

[0060] When the polishing composition is used as a polishing liquid as it is, the lower limit of the content of the chelating agent is preferably 0.0001 mass% or more, more preferably 0.001 mass% or more, and even more preferably 0.002 mass% or more, based on the polishing composition. The upper limit of the content of the chelating agent is preferably 1 mass% or less, more preferably 0.5 mass% or less, even more preferably 0.3 mass% or less, and particularly preferably 0.15 mass% or less.

[0061] In addition, when the polishing composition is diluted and used for polishing, that is, when the polishing composition is a concentrated liquid, the content of the chelating agent is usually appropriate to be 5 mass% or less, more preferably 3 mass% or less, and particularly preferably 1.5 mass% or less, from the viewpoints of storage stability, filterability, etc. In addition, from the viewpoint of utilizing the advantages of making it a concentrated liquid, the content of the chelating agent is preferably 0.001 mass% or more, more preferably 0.01 mass% or more, and even more preferably 0.05 mass% or more.

[0062] When two or more chelating agents are used in combination, the above content refers to the total content of the two or more chelating agents.

[0063] The preservative and antifungal agent that can be contained in the polishing composition can be used alone or in combination of two or more. Examples of the preservative and antifungal agent include isothiazoline preservatives such as 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one, paraoxybenzoic acid esters, and phenoxyethanol.

[0064] The polishing composition disclosed herein is preferably substantially free of an oxidizing agent. If an oxidizing agent is contained in the polishing composition, the surface of the silicon wafer may be oxidized by the supply of the composition, resulting in an oxide film, which may result in a decrease in the polishing rate. Here, the polishing composition is substantially free of an oxidizing agent, which means that an oxidizing agent is not intentionally blended at least, and it is acceptable that a trace amount of an oxidizing agent is inevitably contained due to raw materials, manufacturing method, etc. The above-mentioned trace amount means that the molar concentration of the oxidizing agent in the polishing composition is 0.0005 mol / L or less (preferably 0.0001 mol / L or less, more preferably 0.00001 mol / L or less, particularly preferably 0.000001 mol / L or less). A preferred embodiment of the polishing composition does not contain an oxidizing agent. The polishing composition disclosed herein can be preferably implemented in an embodiment that does not contain any of hydrogen peroxide, sodium persulfate, ammonium persulfate, and sodium dichloroisocyanurate, for example.

[0065] [Characteristics of the polishing composition] The polishing composition according to the present invention is typically supplied to the silicon wafer in the form of a polishing liquid containing the polishing composition, and is used for rough polishing of the silicon wafer. The polishing composition according to the present invention may be, for example, diluted and used as a polishing liquid, or may be used as a polishing liquid as it is. Here, dilution typically means dilution with water. The concept of the polishing composition in the technology according to the present invention includes both a polishing liquid (working slurry) that is supplied to a silicon wafer and used for polishing, and a concentrated liquid (undiluted working slurry) that is diluted and used for polishing. The concentration ratio of the concentrated liquid can be, for example, about 2 times or more and 140 times or less on a volume basis, and is usually about 4 times or more and 80 times or less (for example, about 5 times or more and 50 times or less).

[0066] When the polishing composition is used as it is as a polishing liquid, the pH of the polishing composition is preferably 8.0 or more, more preferably 8.5 or more, even more preferably 9.5 or more, and particularly preferably 10.0 or more (for example, 10.2 or more). When the pH of the polishing composition is high, the polishing rate increases. On the other hand, when the polishing composition is used as it is as a polishing liquid, the pH of the polishing composition is preferably 12.0 or less, more preferably 11.5 or less. If the pH of the polishing composition is 12.0 or less, dissolution of the abrasive grains can be suppressed, and the mechanical polishing action of the abrasive grains can be prevented from decreasing.

[0067] In addition, when the polishing composition is diluted and used for polishing, that is, when the polishing composition is a concentrated liquid, the pH of the polishing composition is preferably 9.5 or more, more preferably 10.0 or more, and even more preferably 10.5 or more. In addition, the pH of the polishing composition is suitably 12.0 or less, and preferably 11.5 or less.

[0068] The pH of the polishing composition can be measured using a pH meter. After three-point calibration of the pH meter using a standard buffer solution, a glass electrode is placed in the polishing composition. The pH of the polishing composition can be determined by measuring the value after 2 minutes or more have elapsed and the value has stabilized. The pH meter can be, for example, a glass electrode type hydrogen ion concentration indicator (model number F-72) manufactured by Horiba, Ltd. The standard buffer solution can be, for example, a phthalate pH buffer solution, pH: 4.01, a neutral phosphate pH buffer solution, pH: 6.86, or a carbonate pH buffer solution, pH: 10.01. Here, the pH is a value at 25°C.

[0069] The polishing composition of the present invention may be a one-liquid type or a multi-liquid type, including a two-liquid type. The multi-liquid type is a combination of liquids in which a part or all of the polishing composition is mixed at any mixing ratio. In addition, when a polishing device having a plurality of supply paths for the polishing composition is used, two or more polishing compositions that have been prepared in advance may be used so that the polishing compositions are mixed on the polishing device.

[0070] [Method of manufacturing the polishing composition] The polishing composition of the present invention can be obtained, for example, by stirring and mixing each component in water. However, this method is not limited to this method. The temperature at which each component is mixed is not particularly limited, but is preferably 10°C or higher and 40°C or lower, and may be heated to increase the dissolution rate. The mixing time is not particularly limited.

[0071] [Polishing method] The polishing composition according to the present invention can be used in a polishing step of a silicon wafer, for example, in an embodiment including the following operations. Thus, the present invention also provides a polishing method for polishing a silicon wafer using the above-mentioned polishing composition.

[0072] First, the polishing composition according to the present invention is prepared. Then, the polishing composition is supplied to a silicon wafer, and polishing is performed by a conventional method. For example, a silicon wafer is set in a general polishing device, and the polishing composition is supplied to the surface (surface to be polished) of the silicon wafer through the polishing pad of the polishing device. Typically, the polishing pad is pressed against the surface of the silicon wafer while the polishing composition is continuously supplied, and the two are moved relatively (for example, rotated). Through this polishing process, the polishing of the silicon wafer is completed.

[0073] The polishing pad used in the above step is not particularly limited. For example, any of polyurethane type, nonwoven type, suede type, abrasive type, and abrasive type may be used. In addition, as the polishing device, a double-sided polishing device that polishes both sides of the silicon wafer at the same time, or a single-sided polishing device that polishes only one side of the silicon wafer may be used.

[0074] The polishing conditions are not particularly limited, but for example, the rotation speed of the polishing platen is preferably 10 rpm or more and 500 rpm or less, and the pressure (polishing pressure) applied to the silicon wafer is preferably 3 kPa or more and 70 kPa or less, for example, 3.45 kPa or more and 69 kPa or less. The method of supplying the polishing composition to the polishing pad is also not particularly limited, and for example, a method of continuously supplying the composition by a pump or the like is adopted. There is no limit to the amount of supply, but it is preferable that the surface of the polishing pad is always covered with the polishing composition of the present invention.

[0075] The polishing composition may be used in a so-called "run-through" manner, or may be recycled and used repeatedly. Run-through here refers to a mode in which the composition is used once for polishing and then discarded. Examples of the method of recycling the polishing composition include the following. This is a method in which the used polishing composition discharged from the polishing device is collected in a tank, and the collected polishing composition is supplied to the polishing device again. When recycling the polishing composition, the environmental load can be reduced. This is because the amount of used polishing composition to be treated as waste liquid is reduced compared to when the polishing composition is used in a run-through manner. In addition, the cost can be reduced by reducing the amount of polishing composition used.

[0076] [Application] As described above, the polishing composition of the present invention can polish silicon wafers at a high polishing rate. Taking advantage of such characteristics, the polishing composition disclosed herein can be particularly preferably used in a preliminary polishing step, i.e., the first polishing step (primary polishing step) in a polishing step or the subsequent intermediate polishing step (secondary polishing step). The preliminary polishing step is typically carried out as a double-side polishing step in which both sides of a silicon wafer are polished simultaneously. The polishing composition disclosed herein can be preferably used in such a double-side polishing step. EXAMPLES

[0077] The present invention will be described in more detail with reference to the following examples and comparative examples, although the technical scope of the present invention is not limited to the following examples.

[0078] The HOMO energy levels of nitrogen-containing organic compounds were calculated using the PM7 (Parametric Method 7) method, which is the Hamiltonian of the semi-empirical molecular orbital program MOPAC.

[0079] The pH of the polishing composition was measured using a pH glass electrode type hydrogen ion concentration indicator (model number F-72) manufactured by Horiba, Ltd.

[0080] [Preparation of concentrated polishing composition] Example 1 The above components and ion-exchanged water were mixed and stirred at room temperature (25°C) for 30 minutes to prepare a concentrated solution of polishing composition, so that the concentration of the abrasive grains was 33% by mass of colloidal silica (average primary particle diameter 55nm), the basic compound was 200mM of tetramethylammonium hydroxide (TMAH), and the nitrogen-containing organic compound was 40mM of 4-aminopiperidine. The pH of the concentrated solution of the polishing composition according to each example was 11.6.

[0081] The content of each component in the concentrated polishing composition is as follows: Colloidal silica 33% by mass TMAH 200mM 4-Aminopiperidine 40mM.

[0082] (Examples 2 to 10) A concentrated solution of a polishing composition was prepared in the same manner as in Example 1, except that a nitrogen-containing organic compound shown in Table 1 below was used instead of 4-aminopiperidine.

[0083] Comparative Example 1 A concentrated polishing composition was prepared in the same manner as in Example 1, except that no nitrogen-containing organic compound was used.

[0084] (Comparative Examples 2 to 4) A concentrated solution of a polishing composition was prepared in the same manner as in Example 1, except that a nitrogen-containing organic compound shown in Table 1 below was used instead of 4-aminopiperidine.

[0085] (Evaluation of polishing speed) The prepared concentrated solution of the polishing composition was diluted 30 times by volume with ion-exchanged water. Using this diluted polishing composition, bare silicon wafers (60 mm x 60 mm, conductivity type: P type, crystal orientation: <100> ) was subjected to single-side polishing under the following polishing conditions to obtain a polished silicon wafer. The pH of the diluted polishing composition was 10.4: <Polishing conditions> Polishing machine: Engis Japan Co., Ltd., tabletop polishing machine, EJ-380IN Pad: Polyurethane pad, Nitta DuPont SUBA800 Grinding pressure: 16kPa Flow rate of polishing composition: 100 L / min Platen rotation speed: +50 rpm (counterclockwise as viewed from above the polisher) Head rotation speed: +45 rpm (counterclockwise as viewed from above the polisher) Maintenance temperature of polishing composition: 25°C Removal allowance: 4μm Polishing time: 14-18 minutes.

[0086] [Evaluation of Polishing Rate] After a silicon wafer was polished with the polishing composition of each of the Examples and Comparative Examples, the removal rate was calculated according to the following formulas (1) to (3).

[0087]

number

[0088] The polishing rates in Table 1 below are shown as percentages when the polishing rate when the polishing composition of Comparative Example 1 was used was taken as 100%, and a larger value indicates a higher polishing rate.

[0089] The evaluation results are shown in Table 1 below.

[0090] [Table 1]

[0091] As is clear from Table 1 above, it was found that when the polishing compositions of the Examples were used, silicon wafers could be polished at a high polishing rate.

Claims

1. A polishing composition used for polishing silicon wafers, comprising: a nitrogen-containing organic compound having an energy level of the highest occupied molecular orbital (HOMO) of −9.50 eV or higher; Water, Including, The polishing composition, wherein the nitrogen-containing organic compound is a compound having a saturated hydrocarbon ring group or a saturated heterocyclic group containing one nitrogen atom.

2. The polishing composition of claim 1 , further comprising abrasive grains.

3. The polishing composition according to claim 2 , wherein the abrasive grains are colloidal silica.

4. The polishing composition according to any one of claims 1 to 3, further comprising a basic compound other than the nitrogen-containing organic compound.

5. A method for polishing a silicon wafer, comprising the step of polishing the silicon wafer with the polishing composition according to any one of claims 1 to 4.

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