Solid-state imaging device and electronic device

Abstract

A solid-state image sensor (100) is provided with: a first photoelectric conversion unit; and a second photoelectric conversion unit (600). The first and second photoelectric conversion units (500, 600) are bonded at bonding surfaces facing each other and include: upper electrodes (502, 602); lower electrodes (508A, 608); photoelectric conversion films (504, 604); and storage electrodes (510, 610). The lower electrode (508A) of the first photoelectric conversion unit (500) is connected to a charge accumulation unit (314) via first via electrodes (460A, 460B) passing through a semiconductor substrate (300). The lower electrode (608) of the second photoelectric conversion unit (600) is connected to the charge accumulation unit (314) via a second electrode (673) provided on the bonding surface of the second photoelectric conversion unit (600), a first electrode (573) provided on the bonding surface of the first photoelectric conversion unit (500), a second via electrode (560) passing through the first photoelectric conversion unit (500), and the first via electrodes (460A, 460B).

Description

[Technical field]

[0001] The present disclosure relates to a solid-state imaging device and an electronic device. [Background technology]

[0002] In recent years, in CCD (Charge Coupled Device) image sensors and CMOS (Complementary Metal-Oxide-Semiconductor) image sensors (solid-state imaging devices), three photoelectric conversion films capable of performing photoelectric conversion with red light, green light, and blue light, respectively, are vertically stacked in each unit pixel (solid-state imaging element), and an image sensor capable of detecting three colors of light with one unit pixel has been proposed (for example, Patent Documents 1 and 5 below). In addition, other image sensors capable of detecting three colors of light with one unit pixel include the following. For example, as disclosed in Patent Document 2 below, there can be mentioned an image sensor having a semiconductor substrate on which two photodiodes (PD) (photoelectric conversion elements) that detect red light and blue light, respectively, are stacked, and a photoelectric conversion film that is provided above the semiconductor substrate and is capable of performing photoelectric conversion with green light.

[0003] Furthermore, in an image sensor having a semiconductor substrate on which two PDs are stacked and a photoelectric conversion film provided above the semiconductor substrate, the following circuit configurations for extracting pixel signals can be mentioned: For example, as disclosed in the following Patent Document 3, a back-illuminated structure can be mentioned in which a circuit formation layer on which the above-mentioned circuits are formed is formed on the side opposite to the light receiving surface of the image sensor.

[0004] Another example of an image sensor is the image sensor disclosed in Patent Document 4. Patent Document 4 discloses a structure in which a semiconductor layer for storing and transferring charges obtained by photoelectric conversion and a storage electrode facing the semiconductor layer via an insulating film are provided directly below a photoelectric conversion film provided above a semiconductor substrate. In this structure, charges generated by photoelectric conversion by the photoelectric conversion film can be efficiently stored in the photoelectric conversion film like a type of capacitor. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2005-51115 A [Patent Document 2] JP 2003-332551 A [Patent Document 3] JP 2011-29337 A [Patent Document 4] JP 2017-157816 A [Patent Document 5] International Publication No. 2016 / 002576 Summary of the Invention [Problem to be solved by the invention]

[0006] In the above-mentioned image sensor (solid-state imaging element), a plurality of pixel transistors (e.g., an amplifier transistor, a transfer transistor, a reset transistor, etc.) and wiring for connecting these pixel transistors are provided in order to output the charges generated in the photoelectric conversion film provided above the substrate as pixel signals. In order to improve the characteristics of the image sensor and suppress an increase in manufacturing costs, it is necessary to arrange the wiring in a suitable configuration. However, in conventional proposals, a suitable configuration for the wiring has not been specifically considered.

[0007] In view of the above circumstances, the present disclosure proposes a new and improved solid-state imaging device and electronic device that are capable of efficiently outputting and transferring pixel signals while suppressing increases in manufacturing costs. [Means for solving the problem]

[0008] According to the present disclosure, a semiconductor device includes a semiconductor substrate, a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges, and a second photoelectric conversion unit provided above the first photoelectric conversion unit and configured to convert light into electric charges, the first and second photoelectric conversion units being bonded to each other at bonding surfaces facing each other, each of the first and second photoelectric conversion units having a stacked structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, the upper electrode, and a storage electrode facing the photoelectric conversion film and an insulating film therebetween, A solid-state imaging element is provided in which the lower electrode of a first photoelectric conversion unit is electrically connected to a charge accumulation unit provided in the semiconductor substrate via a first through electrode that penetrates the semiconductor substrate, and the lower electrode of the second photoelectric conversion unit is electrically connected to the charge accumulation unit via a second electrode provided on a junction surface of the second photoelectric conversion unit, a first electrode that is provided on the junction surface of the first photoelectric conversion unit so as to face the second electrode and joins to the second electrode, a second through electrode that penetrates the first photoelectric conversion unit, and the first through electrode.

[0009] According to the present disclosure, there is also provided a method for manufacturing a solid-state imaging device comprising: a solid-state imaging element; an optical system that forms an image of incident light on a light receiving surface of the solid-state imaging element; and a processor that controls the solid-state imaging element, the solid-state imaging element comprising: a semiconductor substrate; a first photoelectric conversion unit that is provided above the semiconductor substrate and converts light into electric charges; and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges, the first and second photoelectric conversion units being bonded to each other at bonding surfaces that face each other, and each of the first and second photoelectric conversion units comprising an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, the upper electrode, and the photoelectric conversion film. The electronic device has a laminated structure including a charge storage section provided in the semiconductor substrate via a first through electrode that penetrates the semiconductor substrate, and the lower electrode of the second photoelectric conversion section is electrically connected to the charge storage section via a second electrode provided on a junction surface of the second photoelectric conversion section, a first electrode that is provided on the junction surface of the first photoelectric conversion section so as to face the second electrode and that bonds to the second electrode, a second through electrode that penetrates the first photoelectric conversion section, and the first through electrode. [Brief description of the drawings]

[0010] [Figure 1] FIG. 2 is an explanatory diagram showing an example of the planar configuration of a solid-state imaging device according to the embodiment; [Diagram 2] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Diagram 3] FIG. 2 is an explanatory diagram showing a part of a cross-sectional view of the solid-state imaging element according to the embodiment. [Figure 4] 4 is a cross-sectional view of the solid-state imaging element taken along line AA' in FIG. [Diagram 5] 4 is a cross-sectional view of the solid-state imaging element taken along line BB' in FIG. [Figure 6] 4 is a cross-sectional view of the solid-state imaging element taken along line CC' in FIG. [Figure 7] 4 is a cross-sectional view of the solid-state imaging element taken along line DD' in FIG. [Figure 8] 4A to 4C are diagrams for explaining a method for manufacturing a solid-state imaging element according to the present embodiment. [Figure 9] 4 is a cross-sectional view of the solid-state imaging element taken along line AA' in FIG. [Figure 10] 4 is a cross-sectional view of the solid-state imaging element taken along line BB' in FIG. [Figure 11] 4 is a cross-sectional view of the solid-state imaging element taken along line CC' in FIG. [Figure 12] 4 is a cross-sectional view of the solid-state imaging element taken along line DD' in FIG. [Figure 13] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Figure 14] 14 is a cross-sectional view of the solid-state imaging element taken along line D1-D1' in FIG. 13. [Figure 15] 14 is a cross-sectional view of the solid-state imaging element taken along line D1-D1' in FIG. 13. [Figure 16] 2 is an equivalent circuit diagram of a PD of the solid-state imaging device according to the embodiment. [Figure 17] 2 is an equivalent circuit diagram of a PD included in the solid-state imaging device according to the embodiment. [Figure 18] 5 is an explanatory diagram for explaining a readout method of the solid-state imaging element according to the embodiment. FIG. [Figure 19] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Figure 20] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Figure 21] 21 is a cross-sectional view of the solid-state imaging element taken along line D2-D2' in FIG. 20. [Figure 22] 21 is a cross-sectional view of the solid-state imaging element taken along line A2-A2' in FIG. 20. [Diagram 23] 5A and 5B are diagrams for explaining the shape of an electrode according to the embodiment. [Figure 24] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Diagram 25]25 is a cross-sectional view of the solid-state imaging element taken along line B3-B3' in FIG. 24. [Figure 26] 11A and 11B are diagrams for explaining the effect of providing a dummy electrode according to the present embodiment. [Figure 27] 11A and 11B are diagrams for explaining the effect of providing a dummy electrode according to the present embodiment. [Figure 28] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Figure 29] 29 is a cross-sectional view of the solid-state imaging element taken along line B4-B4' in FIG. 28. [Diagram 30] 29 is a cross-sectional view of the solid-state imaging element taken along line B4-B4' in FIG. 28. [Diagram 31] 29 is a cross-sectional view of the solid-state imaging element taken along line B4-B4' in FIG. 28. [Diagram 32] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Diagram 33] 33 is a cross-sectional view of the solid-state imaging element taken along line B5-B5' in FIG. 32. [Diagram 34] 33 is a cross-sectional view of the solid-state imaging element taken along line C5-C5' in FIG. 32. [Diagram 35] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Diagram 36] 36 is a cross-sectional view of the solid-state imaging element taken along line B6-B6' in FIG. 35. [Figure 37] 4A to 4C are diagrams for explaining a method for manufacturing a solid-state imaging element according to the present embodiment. [Figure 38] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Figure 39] 39 is a cross-sectional view of the solid-state imaging element taken along line B7-B7' in FIG. 38. [Diagram 40] 4A to 4C are diagrams for explaining a method for manufacturing a solid-state imaging element according to the present embodiment. [Diagram 41] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Diagram 42]42 is a cross-sectional view of the solid-state imaging element taken along line B8-B8' in FIG. 41. [Diagram 43] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Diagram 44] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Diagram 45] 45 is a cross-sectional view of the solid-state imaging element taken along line B9-B9' in FIG. 44. [Figure 46] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Figure 47] FIG. 11 is a cross-sectional view of a pixel array portion according to Modification 1 of the embodiment. [Figure 48] FIG. 11 is a cross-sectional view of a pixel array portion according to Modification 2 of the present embodiment. [Figure 49] 2 is a cross-sectional view of a pixel array portion according to the embodiment. FIG. [Figure 50] 50 is a cross-sectional view of the solid-state imaging element taken along line EE' in FIG. 49 in a two-pixel sharing configuration. [Figure 51] 50 is a cross-sectional perspective view of a solid-state imaging element in four-pixel sharing, taken along line EE' in FIG. 49. [Figure 52] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 53] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 54] 11 is a cross-sectional view of a main part of a pixel array unit according to Modification 1 of the present embodiment. FIG. [Figure 55] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 56] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 57] 11 is a cross-sectional view of a main part of a pixel array unit according to Modification 2 of the present embodiment. FIG. [Figure 58] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 59]5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 60] 11 is a cross-sectional view of a main part of a pixel array unit according to a third modified example of the present embodiment. FIG. [Figure 61] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 62] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 63] FIG. 11 is a cross-sectional view of a main part of a pixel array unit according to a fourth modified example of the present embodiment. [Figure 64] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 65] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 66] FIG. 13 is a cross-sectional view of a main part of a pixel array unit according to a fifth modified example of the present embodiment. [Figure 67] 5A to 5C are cross-sectional views for explaining a method for manufacturing the solid-state imaging element according to the embodiment. [Figure 68] 1 illustrates an example of a schematic configuration of an imaging system including a solid-state imaging device (imaging device) according to the above embodiment and its modified example. [Figure 69] FIG. 2 is a diagram illustrating an example of a flowchart of an imaging operation in the imaging system. [Figure 70] 1 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied. [Figure 71] 71 is a block diagram showing an example of the functional configuration of the camera head and the CCU shown in FIG. 70. [Figure 72] 1 is a block diagram showing a schematic configuration example of a vehicle control system that is an example of a mobile object control system to which the technology according to the present disclosure can be applied. [Figure 73] FIG. 4 is a diagram showing an example of an installation position of an imaging unit. [Figure 74] FIG. 11 is a cross-sectional view of a pixel array portion according to a comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted.

[0012] In addition, in this specification and drawings, similar components in different embodiments may be distinguished by adding different alphabets after the same reference numerals. However, when there is no need to particularly distinguish between similar components, only the same reference numerals are used.

[0013] In addition, the drawings referred to in the following description are drawings for explaining and understanding the embodiments of the present disclosure, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings may differ from the actual ones. Furthermore, the solid-state imaging element and solid-state imaging device shown in the drawings may be appropriately redesigned in consideration of the following explanation and known techniques. In addition, the up-down direction of the stacked structure of the solid-state imaging element in the explanation using the cross-sectional view of the solid-state imaging element corresponds to the relative direction when the incident surface on which light is incident on the solid-state imaging element is the top, and may differ from the up-down direction according to the actual gravitational acceleration.

[0014] Furthermore, in the following description of the circuit configuration, unless otherwise specified, "electrically connected" means connecting multiple elements so that electricity is conducted between them. In addition, in the following description, "electrically connected" includes not only cases where multiple elements are directly and electrically connected, but also cases where multiple elements are indirectly and electrically connected via other elements.

[0015] In the following description, "sharing" refers to the joint use of one other element (e.g., an electrode) between different elements (e.g., a PD, etc.), and more specifically, refers to a state in which both different elements are electrically connected to the one other element, thereby jointly using the one other element.

[0016] In the following description, "gate" refers to the gate electrode of a field effect transistor (FET), "drain" refers to the drain electrode or drain region of the FET, and "source" refers to the source electrode or source region of the FET.

[0017] In the following description, the description of a specific length (numerical value) or shape does not mean only the same value as a mathematically defined numerical value or a geometrically defined shape. In detail, the description of a specific length (numerical value) or shape in the following description includes shapes that have an allowable difference (error or distortion) in the imaging device, its manufacturing process, and its use and operation, or shapes similar to those shapes. For example, when the term "circular shape" is used in the following description, it is not limited to a perfect circle, but also includes shapes similar to a perfect circle, such as an ellipse.

[0018] The explanation will be given in the following order. 1. Background of how the present inventors created the embodiments of the present disclosure 2. First embodiment 2.1 Overview of the configuration of the solid-state imaging device 1 2.2 Stacked structure of the solid-state imaging device 100 2.3 Layout of the Solid-State Imaging Device 100 2.4 Manufacturing method of the solid-state imaging device 100 3. Modification of the First Embodiment 4. Second embodiment 4.1 Stacked structure of the solid-state imaging device 100a 4.2 Layout of the Solid-State Imaging Device 100a 4.3 Equivalent circuit of the solid-state imaging device 100a 4.4 Readout method of the solid-state imaging device 100a 5. Third embodiment 6. Fourth embodiment 7. Fifth embodiment 8. Sixth embodiment 9. Seventh embodiment 10. Eighth embodiment 11. Ninth embodiment 12. Tenth embodiment 13. Eleventh embodiment 14. Twelfth embodiment 15. Thirteenth embodiment 16. Fourteenth embodiment 17. Fifteenth embodiment 18. Application Examples 19. Application example to endoscopic surgery system 20. Examples of applications to mobile devices 21. Summary 22. Supplementary Information

[0019] <<1. Background of how the present inventors created the embodiments of the present disclosure>> First, before describing the details of each embodiment of the present disclosure, the background that led the present inventors to create the embodiments of the present disclosure will be described with reference to Fig. 74. Fig. 74 is a cross-sectional view of a pixel array section 80 according to a comparative example. Here, the comparative example refers to a solid-state imaging device (image sensor) that the present inventors had been studying extensively before creating the embodiments of the present disclosure.

[0020] In recent years, there has been a demand for reducing the pixel size of image sensors. However, as pixel size decreases, the amount of light incident on each pixel decreases, resulting in reduced sensitivity and a reduced signal-to-noise (S / N) ratio.

[0021] In addition, in image sensors, a configuration (e.g., a Bayer array) in which pixels that detect red, green, and blue light, respectively, using primary color filters, are arranged on a plane is widely used. In the case of such a configuration, for example, in a pixel that detects red light, green light and blue light are difficult to transmit through the color filter of the pixel, so they are not photoelectrically converted in the pixel, that is, they are not detected. Therefore, in the case of the above-mentioned configuration, since each pixel detects light of one specific color and cannot detect light of other colors, it cannot be said that the light incident on each pixel is fully utilized, in other words, it can be said that a loss occurs in terms of pixel sensitivity. In addition, in the case of the above-mentioned configuration, since an interpolation process is performed between pixels, false colors occur due to the generation of color signals by interpolation.

[0022] As a method for solving the above-mentioned situation, there is an image sensor in which photoelectric conversion films capable of performing photoelectric conversion with red light, green light, and blue light, respectively, are stacked vertically in three layers in a unit pixel, and three colors of light can be detected with one unit pixel (for example, Patent Documents 1 and 5 mentioned above). Other examples of image sensors capable of detecting three colors of light with one unit pixel include the following. For example, as disclosed in Patent Document 2 mentioned above, there is an image sensor having a semiconductor substrate on which two PDs for detecting red light and blue light, respectively, are stacked, and a photoelectric conversion film provided above the semiconductor substrate and capable of performing photoelectric conversion with green light.

[0023] Furthermore, in an image sensor having a semiconductor substrate on which two PDs are stacked and a photoelectric conversion film provided above the semiconductor substrate, the following circuit configurations for extracting pixel signals can be cited. For example, as described above and disclosed in the above Patent Document 3, a back-illuminated structure can be cited in which a circuit formation layer on which the above circuit is formed is formed on the opposite side of the light receiving surface of the image sensor. In the case of the above structure, no circuit or wiring is provided between the PD in the semiconductor substrate and the photoelectric conversion film provided above the semiconductor substrate. Therefore, according to this structure, it is possible to shorten the distance between the PD and the photoelectric conversion film in the stacking direction (vertical direction) in the same pixel. As a result, in this structure, the F-number dependency of each color can be suppressed, and the difference in sensitivity between each color can be reduced.

[0024] As another example of the image sensor, there may be mentioned an image sensor as disclosed in the above-mentioned Patent Document 4. The above-mentioned Patent Document 4 discloses a structure in which a semiconductor layer for storing and transferring charges obtained by photoelectric conversion and a storage electrode facing the semiconductor layer through an insulating film are provided directly below a photoelectric conversion film provided above a semiconductor substrate. In this structure, charges generated by photoelectric conversion by the photoelectric conversion film can be efficiently stored in the photoelectric conversion film like a type of capacitor. Furthermore, in the above-mentioned structure, since charges can be stored in the photoelectric conversion film, it is possible to completely deplete a charge storage section (floating diffusion section) provided in the semiconductor substrate at the start of exposure and erase the charges. As a result, according to this structure, it is possible to suppress the occurrence of a phenomenon in which random noise deteriorates due to an increase in kTC noise (noise caused by thermal fluctuation of charges) caused by the charges in the charge storage section, and the image quality of the image sensor deteriorates.

[0025] Incidentally, when a plurality of PDs are provided in a unit pixel as described above (for example, Patent Document 5), a charge storage section is provided for each PD in the semiconductor substrate in order to extract the charge generated by the photoelectric conversion for each PD. Furthermore, in order to transfer the charge generated by the photoelectric conversion for each PD to each charge storage section, a through electrode, wiring, etc. penetrating the semiconductor substrate are provided for each PD. A solid-state imaging element 800 having such a structure will be described with reference to FIG. 74. FIG. 74 is a cross-sectional view of a pixel array section 80 having a plurality of solid-state imaging elements 800 arranged two-dimensionally in a matrix on a semiconductor substrate 300 of a solid-state imaging device according to a comparative example. In FIG. 74, the solid-state imaging element 800 is illustrated so that the incident surface on which light is incident on the solid-state imaging element 800 is on the upper side.

[0026] 74, in the comparative example, PDs 802, 804, and 806 are stacked on a semiconductor substrate 300. Furthermore, in the comparative example, each of the PDs 802, 804, and 806 is electrically connected to a floating diffusion portion (charge storage portion) 814 provided in the semiconductor substrate 300 in order to temporarily store generated charges. More specifically, in the comparative example, each of the PDs 802, 804, and 806 is electrically connected to the floating diffusion portion 814 via a through electrode 807 and a through electrode 860 provided to penetrate the semiconductor substrate 300.

[0027] In this comparative example, no consideration was given to a specific configuration for connecting the through electrode 807 and the through electrode 860. For example, if the connection between the through electrode 807 and the through electrode 860 is misaligned along a direction perpendicular to the stacking direction, charges (pixel signals) cannot be output from the PDs 802, 804, and 806. Thus, in the comparative example, there was a risk that the pixel signals generated in the PDs 802, 804, and 806 could not be output efficiently.

[0028] In view of the above-mentioned circumstances, the present inventors have been studying a solid-state imaging element capable of efficiently outputting pixel signals while avoiding an increase in manufacturing costs. In the course of the study, the present inventors have independently come up with a configuration in which a through electrode penetrating a photoelectric conversion film is connected to a wiring extending from a lower electrode of another photoelectric conversion film arranged above the photoelectric conversion film via an electrode. According to the idea of ​​the present inventors, if the wiring extending from the lower electrode of the other photoelectric conversion film can be more reliably connected to the through electrode, the pixel signal generated in the other photoelectric conversion film can be efficiently output and transferred to the floating diffusion section.

[0029] That is, the inventors have created the embodiments of the present disclosure with the above-mentioned idea as a main point of view. The details of the embodiments of the present disclosure will be described below in order.

[0030] <<2. First embodiment>> <2.1 Schematic configuration of the solid-state imaging device 1> First, a schematic configuration of a solid-state imaging device 1 according to a first embodiment of the present disclosure will be described with reference to Fig. 1. Fig. 1 is an explanatory diagram showing an example of a planar configuration of the solid-state imaging device 1 according to this embodiment. As shown in Fig. 1, the solid-state imaging device 1 according to this embodiment includes a pixel array section 10, a vertical driving circuit section 32, a column signal processing circuit section 34, a horizontal driving circuit section 36, an output circuit section 38, a control circuit section 40, and the like, which are provided on a semiconductor substrate 300 made of, for example, silicon. Each block of the solid-state imaging device 1 according to this embodiment will be described in detail below.

[0031] (Pixel array section 10) The pixel array unit 10 has a plurality of solid-state imaging elements (pixels) 100 arranged two-dimensionally in a matrix on a semiconductor substrate 300. The solid-state imaging element 100 means a solid-state imaging element (unit pixel) that can be regarded as one unit that detects light of each color and outputs one result for each color when outputting the detection result. Each solid-state imaging element 100 has a plurality of photoelectric conversion elements (PD) (not shown) and a plurality of pixel transistors (e.g., MOS (Metal-Oxide-Semiconductor) transistors) (not shown). More specifically, the pixel transistors can include, for example, a transfer transistor, a selection transistor, a reset transistor, and an amplification transistor. The circuit (connection configuration) of these pixel transistors will be described in detail later.

[0032] (Vertical drive circuit section 32) The vertical drive circuit unit 32 is formed of, for example, a shift register, selects a pixel drive wiring 42, supplies a pulse for driving the solid-state imaging element 100 to the selected pixel drive wiring 42, and drives the solid-state imaging element 100 row by row. That is, the vertical drive circuit unit 32 selects and scans each solid-state imaging element 100 in the pixel array unit 10 in the vertical direction (up and down direction in FIG. 1) sequentially row by row, and supplies a pixel signal based on a charge generated according to the amount of light received by the PD of each solid-state imaging element 100 to a column signal processing circuit unit 34 (described later) through a vertical signal line 44.

[0033] (Column signal processing circuit unit 34) The column signal processing circuit unit 34 is arranged for each column of the solid-state imaging element 100, and performs signal processing such as noise removal for each pixel column on pixel signals output from one row of the solid-state imaging element 100. For example, the column signal processing circuit unit 34 performs signal processing such as CDS (Correlated Double Sampling) and AD (Analog-Digital) conversion in order to remove fixed pattern noise specific to each pixel.

[0034] (Horizontal drive circuit section 36) The horizontal drive circuit unit 36 ​​is formed, for example, by a shift register, and by sequentially outputting horizontal scanning pulses, it can select each of the above-mentioned column signal processing circuit units 34 in turn, and output pixel signals from each of the column signal processing circuit units 34 to the horizontal signal line 46.

[0035] (Output circuit section 38) The output circuit unit 38 can process and output pixel signals sequentially supplied from each of the column signal processing circuit units 34 through the horizontal signal line 46. The output circuit unit 38 may function as a functional unit that performs buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and other processes. Note that buffering refers to temporarily storing pixel signals to compensate for differences in processing speed and transfer speed when exchanging pixel signals. The input / output terminal 48 is a terminal for exchanging signals with an external device.

[0036] (Control circuit section 40) The control circuit section 40 receives an input clock and data instructing an operation mode and the like, and can also output data such as internal information of the solid-state imaging device 100. That is, the control circuit section 40 generates clock signals and control signals that serve as a reference for the operation of the vertical drive circuit section 32, the column signal processing circuit section 34, the horizontal drive circuit section 36, etc., based on a vertical synchronization signal, a horizontal synchronization signal, and a master clock. Then, the control circuit section 40 outputs the generated clock signals and control signals to the vertical drive circuit section 32, the column signal processing circuit section 34, the horizontal drive circuit section 36, etc.

[0037] Note that the planar configuration example of the solid-state imaging device 1 according to this embodiment is not limited to the example shown in FIG. 1, and may include other circuits, for example, and is not particularly limited.

[0038] <2.2 Laminated structure of the solid-state imaging device 100> The schematic configuration of the solid-state imaging device 1 according to this embodiment has been described above. Next, with reference to FIG. 2, the stacked structure of the solid-state imaging element 100 according to this embodiment will be described. FIG. 2 is a cross-sectional view of the pixel array section 10 according to this embodiment. In FIG. 2, the solid-state imaging element 100 is illustrated so that the incident surface on which light is incident on the solid-state imaging element 100 faces upward. In the following description, the stacked structure of the solid-state imaging element 100 will be described in the order from the semiconductor substrate 300 located below the solid-state imaging element 100 to the PD500 (first photoelectric conversion unit) provided above the semiconductor substrate 300, and the PD600 (second photoelectric conversion unit) provided above the PD500.

[0039] 2, in the solid-state imaging device 100, a semiconductor region 410 having a second conductivity type (e.g., N type) is provided in a semiconductor region 310 having a first conductivity type (e.g., P type) of a semiconductor substrate 300 made of, for example, silicon. A PN junction formed by such a semiconductor region 410 forms a PD 400 in the semiconductor substrate 300, which converts light into electric charges. In this embodiment, the PD 400 is a photoelectric conversion element that absorbs, for example, red light (e.g., light having a wavelength of 600 nm to 700 nm) and generates electric charges.

[0040] Further, on the opposite side of the semiconductor substrate 300 from the incident surface (lower side in FIG. 2), a wiring layer 200 is provided, which includes wiring 230 formed of tungsten (W), aluminum (Al), copper (Cu), cobalt (Co), ruthenium (Ru), or the like, and an interlayer insulating film 240 formed of silicon oxide (SiO2), or the like. Furthermore, the wiring layer 200 is provided with a plurality of electrodes 232 formed of W, Al, Cu, or the like as gate electrodes of a plurality of pixel transistors for reading out charges generated in the PDs 400, 500, and 600. Specifically, the electrodes 232 are provided so as to face a semiconductor region 310 having a first conductivity type (e.g., P type) in the semiconductor substrate 300 via an insulating film 450. Furthermore, within the semiconductor substrate 300, a semiconductor region 312 having a second conductivity type (e.g., N type) is provided adjacent to the semiconductor region 310 having the first conductivity type, and the semiconductor region 312 functions as a source / drain region of the pixel transistor.

[0041] Furthermore, a floating diffusion section (charge storage section) 314, which is a semiconductor region having a second conductivity type (for example, N type), is provided in the semiconductor substrate 300. The floating diffusion section 314 can temporarily store charges generated in the PDs 400, 500, and 600. In this embodiment, an isolation insulating film 342 made of SiO2 or the like may be provided in the semiconductor substrate 300 so as to be adjacent to the floating diffusion section 314 and the semiconductor region 312, which is the source / drain region of each pixel transistor.

[0042] 2, in this embodiment, through electrodes (first through electrodes) 460A, 460B for extracting charges generated in PDs 500, 600 described later to the wiring 230 are provided to penetrate the semiconductor substrate 300. The through electrodes 460A, 460B can be formed of a metal film such as Cu, W, Al, etc. In addition, in order to prevent a short circuit between the through electrodes 460A, 460B and the semiconductor substrate 300, insulating films 462A, 462B made of SiO2 or the like are provided to cover the outer periphery of the through electrodes 460A, 460B. Furthermore, in this embodiment, a barrier metal film (not shown) may be provided between the through electrodes 460A, 460B and the insulating films 462A, 462B surrounding the outer periphery of the through electrodes 460A, 460B. The barrier metal film can be formed from a material such as titanium nitride (TiN), tungsten nitride (WN), titanium (Ti), tantalum nitride (TaN), tantalum (Ta), zirconium (Zr), Ru, Co, or the like.

[0043] The through electrodes 460A, 460B can electrically connect readout electrodes (lower electrodes) 508A, 608 of the PDs 500, 600 (described later) to a floating diffusion section 314 provided in the semiconductor substrate 300 via the wiring 230 provided in the wiring layer 200. Therefore, the floating diffusion section 314 can temporarily store charges generated by photoelectric conversion in the PDs 500, 600 by the through electrodes 460A, 460B. Furthermore, the through electrodes 460A, 460B can electrically connect the readout electrodes 508A, 608 of the PDs 500, 600 to pixel transistors provided in the semiconductor substrate 300.

[0044] The through electrodes 460A and 460B can be formed as follows. For example, a through hole penetrating the semiconductor substrate 300 is created, and the insulating films 462A and 462B and the barrier metal are formed by a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, an atomic layer deposition (ALD) method, or the like so as to cover the inner wall of the through hole. Furthermore, for example, after etching the formed insulating films 462A and 462B and the barrier metal, a metal film such as Cu, W, Al, or the like is formed by a plating method, a CVD method, a PVD method, or an ALD method so as to fill the through hole. In this manner, the through electrodes 460A and 460B can be formed.

[0045] In this embodiment, a semiconductor region (not shown) having a first conductivity type (e.g., P type) may be provided on the incident surface of the semiconductor substrate 300, and an anti-reflection film 402 made of aluminum oxide (Al2O3) may be provided on the semiconductor region.

[0046] In this embodiment, as shown in Fig. 2, a wiring layer 520 including an insulating film 540 made of, for example, SiO2 or the like that can transmit light and wiring 530 made of W or the like is provided between the semiconductor substrate 300 and the PD 500. Since the insulating film 540 can transmit light, the PD 400 provided below the insulating film 540 can receive light and perform photoelectric conversion, that is, detect light. In addition, readout electrodes 508A and 608 of the PDs 500 and 600 described later are electrically connected to the above-mentioned through electrodes 460A and 460B, respectively, via the wiring 530.

[0047] In this embodiment, the photoelectric conversion film 504 is provided on the wiring layer 520 so as to be sandwiched between a common electrode (upper electrode) 502 shared between adjacent solid-state imaging elements 100 (specifically, adjacent in the left-right direction in FIG. 2) and a readout electrode 508A for reading out charges generated in the photoelectric conversion film 504. The common electrode 502, the photoelectric conversion film 504, and the readout electrode 508A constitute a part of a laminated structure of a PD 500 (first photoelectric conversion unit) that converts light into charges. In this embodiment, the PD 500 is a photoelectric conversion element that absorbs, for example, green light (for example, light having a wavelength of 500 nm to 600 nm) and generates charges (photoelectric conversion). Details of materials constituting the common electrode 502, the photoelectric conversion film 504, and the readout electrode 508A will be described later.

[0048] Further, in this embodiment, as shown in FIG. 2, the PD 500 has a storage electrode 510 facing the common electrode 502 via the photoelectric conversion film 504 and the insulating film 506 in order to temporarily store the charge generated in the photoelectric conversion film 504 in the photoelectric conversion film 504. In this embodiment, the storage electrode 510 may face the common electrode 502 via a semiconductor layer (not shown) sandwiched between the photoelectric conversion film 504 and the insulating film 506. The semiconductor layer is provided to more efficiently store the charge, and is preferably made of an oxide semiconductor material that can transmit light. Details of materials constituting the storage electrode 510, the insulating film 506, and the semiconductor layer will be described later.

[0049] 2, the readout electrode 508A in contact with the photoelectric conversion film 504 is electrically connected to the floating diffusion portion 314 provided in the semiconductor substrate 300 via the through electrode 460A. The common electrode 502 is electrically connected to a wiring 570 that applies a desired potential to the common electrode 502. The storage electrode 510 is electrically connected to a wiring 572 that applies a desired potential to the storage electrode 510.

[0050] Therefore, in this embodiment, by controlling the potentials applied to the common electrode 502, the readout electrode 508A, and the storage electrode 510, the charge generated in the photoelectric conversion film 504 can be stored in the photoelectric conversion film 504 or the interface of the photoelectric conversion film 504, or the charge can be extracted to the floating diffusion section 314. In other words, the storage electrode 510 can function as a charge storage electrode for attracting the charge generated in the photoelectric conversion film 504 and storing the charge in the photoelectric conversion film 504 according to the applied potential. Note that, in this embodiment, in order to effectively utilize the light incident on the solid-state imaging device 100, when the solid-state imaging device 100 is viewed from above the incident surface, the storage electrode 510 is preferably provided so as to have a larger area than the readout electrode 508A.

[0051] In this embodiment, as shown in FIG. 2, a wiring layer 620 including insulating films 580, 640 made of, for example, SiO2 or the like that can transmit light and wiring formed of W or the like is provided between the PD500 and the PD600. Since the insulating films 580, 640 can also transmit light, the PD500 provided below the insulating films 580, 640 can receive light and perform photoelectric conversion, that is, detect light. In addition, a read electrode 608 of the PD600 described later is electrically connected to a through electrode (second through electrode) 560 described later via a through electrode 630. The through electrode 630 is provided to penetrate the insulating film 640 from the read electrode 608 of the PD600 to the electrode 673.

[0052] In this embodiment, as shown in FIG. 2, the insulating films 580 and 640 are bonded to each other at a bonding surface JS. The through electrode 560 and the through electrode 630 are electrically connected to each other via electrodes (first electrode, second electrode) 573 and 673. In this embodiment, the electrode 573 is provided on the bonding surface JS of the PD500, and the electrode 673 is provided on the bonding surface JS of the PD600. The electrodes 573 and 673 are bonded to each other at the bonding surface JS. Therefore, in this embodiment, it can be said that the PD500 and the PD600 are bonded to each other at the bonding surfaces JS that face each other.

[0053] 2, the through electrode 560 is provided from the electrode 573 to the read electrode 508A of the PD500 so as to penetrate a part of the insulating film 580 and the PD500. In detail, the read electrode 608 of the PD600 is electrically connected to the through electrode 460B via the through electrodes 560 and 630. Furthermore, the read electrode 608 of the PD600 is electrically connected to the floating diffusion section 314 provided in the semiconductor substrate 300 via the through electrodes 560 and 460B. Therefore, the floating diffusion section 314 can temporarily store the charge generated by the photoelectric conversion in the PD600 by the through electrodes 460B and 560. Furthermore, the read electrode 608 of the PD600 is electrically connected to the pixel transistor provided in the semiconductor substrate 300 via the through electrodes 560 and 460B.

[0054] In this embodiment, the through electrode 560 can be formed of a metal film such as Cu, W, Al, etc. Furthermore, the through electrode 560 may be formed of a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO). Moreover, an insulating film 562 made of SiO2 or the like may be provided on the periphery of the through electrode 560 to prevent a short circuit between the through electrode 560 and the PD 500. Furthermore, in this embodiment, a barrier metal film (not shown) may be provided between the through electrode 560 and the insulating film 562 surrounding the periphery of the through electrode 560. The barrier metal film may be formed of a material such as TiN, for example.

[0055] The through electrode 560 can be formed as follows. For example, a through hole penetrating the PD 500 is created, and an insulating film 562 is formed by a PVD method, a CVD method, an ALD method, or the like so as to cover the inner wall of the through hole. Furthermore, for example, after etching the formed insulating film 562, a metal film such as Cu is formed by a plating method, a CVD method, a PVD method, or an ALD method so as to fill the through hole. In this manner, the through electrode 560 can be formed.

[0056] In this embodiment, the through electrode 630 can be formed of a metal film such as Cu, W, Al, etc. Furthermore, the through electrode 630 may be formed of a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0057] The through electrode 630 can be formed as follows. For example, a through hole penetrating the insulating film 640 is created, and a metal film such as Cu is deposited by plating, CVD, PVD, or ALD so as to fill the through hole. In this manner, the through electrode 630 can be formed.

[0058] Furthermore, in this embodiment, a PD 600 (second photoelectric conversion unit) that converts light into electric charges is provided on the wiring layer 620. The PD 600 is a photoelectric conversion element that absorbs, for example, blue light (for example, light having a wavelength of 400 nm to 500 nm) and generates electric charges (photoelectric conversion). In detail, the PD 600 includes a common electrode (upper electrode) 602, a photoelectric conversion film 604, an insulating film 606, a readout electrode (lower electrode) 608, and a storage electrode 610, which are sequentially stacked.

[0059] Moreover, the readout electrode 608 in contact with the photoelectric conversion film 604 is electrically connected to the through electrode 460B via the through electrode 560. Moreover, the common electrode 602 is electrically connected to a wiring 670 that applies a desired potential to the common electrode 602. Furthermore, the storage electrode 610 is electrically connected to a wiring 672 that applies a desired potential to the storage electrode 610.

[0060] 2, PD500 and PD600 each have a common electrode 502, 602, a photoelectric conversion film 504, 604, and a readout electrode 508A, 608. Furthermore, in the stacked structures of PD500 and PD600, the above-mentioned layers are stacked in the same order. In other words, in the photoelectric conversion stacked structures of PD500 and PD600, the readout electrodes 508A, 608, the photoelectric conversion films 504, 604, and the common electrodes 502, 602 are stacked in this order from the bottom.

[0061] In this embodiment, the layers of PD500 and PD600 may not be stacked in the order described above, and may be stacked in an order that is symmetrical in the stacking direction. In addition, in this embodiment, when the solid-state imaging device 100 is viewed from above the incident surface, the readout electrodes 508A, 608 and the storage electrodes 510, 610 of PD500 and PD600 may not completely overlap each other. That is, in this embodiment, when the solid-state imaging device 100 is viewed from above the incident surface, the layout of the layers of PD500, 600 is not particularly limited.

[0062] The above-mentioned photoelectric conversion films 504 and 604 can be formed from an organic material (organic photoelectric conversion film) or an inorganic material (inorganic photoelectric conversion film). For example, when the photoelectric conversion film is formed from an organic material, any one of the following four modes can be selected: (a) a P-type organic semiconductor material, (b) an N-type organic semiconductor material, (c) a laminated structure of at least two of a P-type organic semiconductor material layer, an N-type organic semiconductor material layer, and a mixed layer (bulk heterostructure) of a P-type organic semiconductor material and an N-type organic semiconductor material, and (d) a mixed layer of a P-type organic semiconductor material and an N-type organic semiconductor material. Note that the photoelectric conversion film using an organic material also includes a laminated structure in which an electron blocking film and buffer film in contact with the readout electrodes 508A and 608, a photoelectric conversion film, a hole blocking film, a hole blocking and buffer film, and a work function adjustment film are laminated.

[0063] In detail, examples of the P-type organic semiconductor material include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, perylene derivatives, tetracene derivatives, pentacene derivatives, quinacridone derivatives, coumarin derivatives, pyrromethene derivatives, pyran derivatives, phenoxazone derivatives, thiophene derivatives, thienothiophene derivatives, benzothiophene derivatives, benzothienobenzothiophene (BTBT) derivatives, dinaphthothienothiophene (DNTT) derivatives, dianthracenothienothiophene (DATT) derivatives, benzobisbenzothiophene (BBBT) derivatives, naphthalenebisbenzothiophene (NBBT), thienobisbenzothiophene (TBBT) derivatives, dibenzothienobisbenzothiophene (BBBT) derivatives, and the like. Examples of the aromatic thiophene derivatives include dithiophene (DBTBT) derivatives, dithienobenzodithiophene (DTBDT) derivatives, dibenzothienodithiophene (DBTDT) derivatives, benzodithiophene (BDT) derivatives, naphthodithiophene (NDT) derivatives, anthracenodithiophene (ADT) derivatives, tetracenodithiophene (TDT) derivatives, pentacenodithiophene (PDT) derivatives, triallylamine derivatives, carbazole derivatives, picene derivatives, chrysene derivatives, fluoranthene derivatives, phthalocyanine derivatives, subphthalocyanine derivatives, subporphyrazine derivatives, metal complexes having a heterocyclic compound as a ligand, polythiophene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives.

[0064] As the N-type organic semiconductor material, fullerene and fullerene derivatives (for example, fullerenes (higher fullerenes) such as C60, C70, and C74, endohedral fullerenes, etc.) or fullerene derivatives (for example, fullerene fluorides and PCBM (Phenyl-C 61Examples of such organic semiconductors include p-type organic semiconductors having a deeper HOMO (Highest Occupied Molecular Orbital) and LUMO (Lowest Unoccupied Molecular Orbital), p-type organic semiconductors having a deeper HOMO (Highest Occupied Molecular Orbital) and LUMO (Lowest Unoccupied Molecular Orbital), and inorganic metal oxides that can transmit light. More specifically, examples of N-type organic semiconductor materials include organic molecules having heterocyclic compounds containing nitrogen atoms, oxygen atoms, or sulfur atoms as part of their molecular skeletons, such as pyridine derivatives, pyrromethene derivatives, pyrazine derivatives, pyrimidine derivatives, triazine derivatives, quinoline derivatives, quinoxaline derivatives, isoquinoline derivatives, coumarin derivatives, pyran derivatives, phenoxazone derivatives, perylene derivatives, acridine derivatives, phenazine derivatives, phenanthroline derivatives, tetrazole derivatives, pyrazole derivatives, imidazole derivatives, thiazole derivatives, oxazole derivatives, imidazole derivatives, benzimidazole derivatives, benzotriazole derivatives, benzoxazole derivatives, benzoxazole derivatives, carbazole derivatives, benzofuran derivatives, dibenzofuran derivatives, subporphyrazine derivatives, polyphenylenevinylene derivatives, polybenzothiadiazole derivatives, and polyfluorene derivatives, as well as organometallic complexes and subphthalocyanine derivatives. Further, examples of groups contained in the fullerene derivative include a branched or cyclic alkyl group or phenyl group; a group having a linear or condensed aromatic compound; a group having a halide; a partial fluoroalkyl group; a perfluoroalkyl group; a silylalkyl group; a silylalkoxy group; an arylsilyl group; an arylsulfanyl group; an alkylsulfanyl group; an arylsulfonyl group; an alkylsulfonyl group; an arylsulfide group; an alkylsulfide group; an amino group; an alkylamino group; an arylamino group; a hydroxy group; an alkoxy group; an acylamino group; an acyloxy group; a carbonyl group; a carboxy group; a carboxamide group; a carboalkoxy group; an acyl group; a sulfonyl group; a cyano group; a nitro group; a group having a chalcogenide; a phosphine group; a phosphonic group; and derivatives thereof.The thickness of the photoelectric conversion film made of an organic material is not limited, but is, for example, 1×10 -8 m~5×10 -7 m, preferably 2.5 × 10 -8 m~3×10 -7 m, more preferably 2.5 × 10 -8 m to 2×10 -7 m. In the above explanation, the organic semiconductor materials are classified into P-type and N-type, but here, P-type means that it is easy to transport holes, and N-type means that it is easy to transport electrons. In other words, organic semiconductor materials are not limited to the interpretation that they have holes or electrons as the majority carriers of thermal excitation, unlike inorganic semiconductor materials.

[0065] Furthermore, the photoelectric conversion films 504 and 604 may be formed of a polymer of phenylenevinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, diacetylene, or the like, or a derivative thereof.

[0066] In addition, when the photoelectric conversion film 504, 604 is formed from an inorganic material, examples of the inorganic semiconductor material include crystalline silicon, amorphous silicon, microcrystalline silicon, crystalline selenium, amorphous selenium, and chalcobalite-based compounds such as CIGS (CuInGaSe), CIS (CuInSe2), CuInS2, CuAlS2, CuAlSe2, CuGaS2, CuGaSe2, AgAlS2, AgAlSe2, AgInS2, and AgInSe2, as well as III-V group compounds such as GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP, as well as compound semiconductors such as CdSe, CdS, In2Se3, In2S3, Bi2Se3, Bi2S3, ZnSe, ZnS, PbSe, and PbS. In addition, in this embodiment, quantum dots made of the above-mentioned materials can also be used as the photoelectric conversion film 504, 604.

[0067] Furthermore, in order to detect blue light and green light, the photoelectric conversion films 504 and 604 can preferably use, for example, metal complex dyes, rhodamine dyes, quinacridone dyes, cyanine dyes, melacyanine dyes, phenylxanthene dyes, triphenylmethane dyes, rhodacyanine dyes, xanthene dyes, macrocyclic azaannulene dyes, azulene dyes, naphthoquinone, anthraquinone dyes, condensed polycyclic aromatics such as anthracene and pyrene, and chain compounds in which aromatic rings or heterocyclic compounds are condensed, or two nitrogen-containing heterocycles such as quinoline, benzothiazole and benzoxazole having a squarylium group and a croconite methine group as a bonding chain, or cyanine-like dyes bonded by a squarylium group and a croconite methine group. Of the metal complex dyes, dithiol metal complex dyes, metal phthalocyanine dyes, metal porphyrin dyes, and ruthenium complex dyes are preferred, with ruthenium complex dyes being particularly preferred, although the invention is not limited to these.

[0068] In this embodiment, the photoelectric conversion films 504 and 604 can be formed by mixing or laminating several kinds of materials in order to improve the characteristics. Furthermore, in this embodiment, the photoelectric conversion films 504 and 604 can be formed by laminating or mixing materials that do not directly contribute to photoelectric conversion in order to improve the characteristics.

[0069] In addition, in this embodiment, the common electrodes 502, 602, the read electrodes 508A, 608, the electrodes 573, 673, and the storage electrodes 510, 610 can be formed of a transparent conductive film that can transmit light, such as a tin-indium oxide (including ITO, crystalline ITO, and amorphous ITO) film. However, in this embodiment, the common electrodes 502, 602, the read electrodes 508A, 608, and the storage electrodes 510, 610 are not limited to ITO as described above, and may be other materials. For example, the transparent conductive film is preferably a material with a band gap of 2.5 eV or more, preferably 3.1 eV or more. For example, the transparent conductive film may be a tin oxide-based material such as tin oxide, antimony-tin oxide (SnO2 with Sb added as a dopant, e.g. ATO), or fluorine-tin oxide (SnO2 with F added as a dopant, e.g. FTO). Examples of zinc oxide-based materials include aluminum zinc oxide (ZnO with Al added as a dopant, e.g., AZO), gallium zinc oxide (ZnO with Ga added as a dopant, e.g., GZO), indium zinc oxide (ZnO with In added as a dopant, e.g., IZO), indium gallium zinc oxide (ZnO4 with In and Ga added as dopants, e.g., IGZO), indium tin zinc oxide (ZnO with In and Sn added as dopants, e.g., ITZO), etc. Indium gallium oxide (Ga2O3 with In added as a dopant, e.g., IGO), CuInO2, MgIn2O4, CuI, InSbO4, ZnMgO, CdO, ZnSnO3, graphene, etc.

[0070] In this embodiment, the electrodes 573 and 673 may be made of a material other than a transparent conductive material, for example, the electrodes 573 and 673 may be made of a metal film such as Cu, W, or Al.

[0071] In this embodiment, the insulating films 506 and 606 can be made of, for example, SiO 2 , Al 2 O 3 , silicon nitride (Si 3 N 4 ), or the like that can transmit light, and are not particularly limited.

[0072] Furthermore, in this embodiment, the semiconductor layer (not shown) included in the PD 500, 600 is preferably formed using a material having a higher charge mobility and a larger band gap than the photoelectric conversion film 504, 604. For example, the band gap of the material constituting the semiconductor layer is preferably 3.0 eV or more. Examples of such materials include oxide semiconductor materials such as IGZO and organic semiconductor materials. Examples of organic semiconductor materials include transition metal dichalcogenides, silicon carbide, diamond, graphene, carbon nanotubes, condensed polycyclic hydrocarbon compounds, and condensed heterocyclic compounds. The semiconductor layer may be formed of a single film, or may be formed by stacking multiple films.

[0073] 2, in this embodiment, an insulating film 780 made of a material such as a SiO2 film that can transmit light is provided on the PD 600. Furthermore, an on-chip lens 790 is provided on the insulating film 780 for each solid-state imaging element 100. The on-chip lens 790 can be formed of, for example, Si3N4 or a resin material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin.

[0074] As described above, the solid-state imaging device 100 according to this embodiment has a stacked structure in which PD400, PD500, and PD600 are stacked to detect three colors of light, respectively. That is, the above-mentioned solid-state imaging device 100 can be said to be a vertical-spectral type solid-state imaging device in which, for example, blue light is photoelectrically converted by the photoelectric conversion film 604 (PD600) formed above the semiconductor substrate 300, green light is photoelectrically converted by the photoelectric conversion film 504 (PD500) provided below the PD600, and red light is photoelectrically converted by the PD400 provided in the semiconductor substrate 300. Note that, in this embodiment, the above-mentioned solid-state imaging device 100 is not limited to the vertical-spectral type stacked structure as described above. For example, green light may be photoelectrically converted by the photoelectric conversion film 604 (PD600) formed above the semiconductor substrate 300, and blue light may be photoelectrically converted by the photoelectric conversion film 504 (PD500) provided below the PD600.

[0075] <2.3 Layout configuration of the solid-state imaging device 100> The stacked structure of the solid-state imaging element 100 according to the present embodiment has been described above. Next, the layout configuration of the solid-state imaging element 100 according to the present embodiment will be described with reference to FIG. 3 to FIG. 7. FIG. 3 is an explanatory diagram showing a part of a cross-sectional view of the solid-state imaging element 100 according to the present embodiment. FIG. 4 is a cross-sectional view of the solid-state imaging element 100 cut along the line AA' in FIG. 3. FIG. 5 is a cross-sectional view of the solid-state imaging element 100 cut along the line BB' in FIG. 3. FIG. 6 is a cross-sectional view of the solid-state imaging element 100 cut along the line CC' in FIG. 3. FIG. 7 is a cross-sectional view of the solid-state imaging element 100 cut along the line DD' in FIG. 3. Note that FIG. 4 to FIG. 7 show cross sections of four pixels (four solid-state imaging elements 100).

[0076] 3, in this embodiment, PD500 and PD600 have a structure in which common electrodes 502, 602, photoelectric conversion films 504, 604, read electrodes 508A, 608, insulating films 506, 606, and storage electrodes 510, 610 are sequentially stacked. The read electrode 608 of PD600 is electrically connected to the through electrode 420B via the through electrode 630, electrodes 573, 673, and through electrode 560. The read electrode 508 of PD500 is electrically connected to the through electrode 420A.

[0077] 4 shows a cross section of the solid-state imaging element 100 cut along line AA' (the interface between the insulating film 606 and the storage electrode 610) shown in FIG. 3, as viewed from above the solid-state imaging element 100. As shown in FIG. 4, the readout electrode 608 is electrically connected to the through electrode 630.

[0078] 5 shows a cross section of the solid-state imaging element 100 cut along line BB' (the interface between the insulating film 640 and the electrode 673) shown in FIG. 3, as viewed from above the solid-state imaging element 100. As shown in FIG. 5, the through electrode 630 is electrically connected to the electrode 673. The size of the electrode 673 is smaller than the size of one pixel.

[0079] 6 shows a cross section of the solid-state imaging element 100 cut along line CC' (the interface between the insulating film 580 and the electrode 573) shown in FIG. 3, as viewed from below the solid-state imaging element 100. As shown in FIG. 6, the through electrode 560 is electrically connected to the electrode 573. The size of the electrode 573 is approximately the same as that of the electrode 673, and is smaller than the size of one pixel.

[0080] 7 shows a cross section of the solid-state imaging element 100 cut along line DD' (the interface between the insulating film 506 and the storage electrode 510) shown in FIG. 3, as viewed from above the solid-state imaging element 100. As shown in FIG. 7, the readout electrode 508A is electrically connected to the wiring 530A that connects to the through electrode 460A. Furthermore, the electrode 508B that is electrically connected to the through electrode 560 is electrically connected to the wiring 530B that connects to the through electrode 460B.

[0081] <2.4 Manufacturing method of the solid-state imaging device 100> The layout configuration of the solid-state imaging element 100 according to this embodiment has been described above. Next, a method for manufacturing the solid-state imaging element 100 according to this embodiment will be described with reference to Fig. 8. Fig. 8 is a diagram for explaining the method for manufacturing the solid-state imaging element 100 according to this embodiment. Note that in Fig. 8, only the reference symbols used in the description are used, and other reference symbols are omitted.

[0082] 8(a), the semiconductor substrate 300 on which the electrode 573 is formed is bonded to the semiconductor substrate 900. The semiconductor substrate 300 is formed above a semiconductor substrate 920 on which a logic circuit is formed. The semiconductor substrate 900 is a silicon substrate 910 on which a wiring layer 620 is formed, and the electrode 673 is formed on the bonding surface.

[0083] Next, as shown in Fig. 8(b), the semiconductor substrate 900 is thinned and the silicon substrate 910 is removed. Subsequently, the photoelectric conversion film 604, the common electrode 502, the insulating film 780, and the on-chip lens 790 are formed on the thinned semiconductor substrate 900, thereby obtaining the solid-state imaging element 100 shown in Fig. 8(c).

[0084] As described above, according to this embodiment, the through electrode 630 electrically connected to the read electrode 608 of the PD 600 and the through electrode 560 are electrically connected via the electrodes 573, 673. The electrodes 573, 673 are provided on the bonding surfaces JS of the PDs 500, 600, respectively, and are bonded to each other at the bonding surfaces JS. Therefore, even if the electrodes 573, 673 are misaligned (the positions of the electrodes 573, 673 are misaligned with each other in a direction perpendicular to the stacking direction), the through electrode 630 and the through electrode 560 can be electrically connected as long as at least a part of the electrodes 573, 673 are bonded. As a result, according to this embodiment, it is possible to efficiently output and transfer pixel signals while suppressing an increase in manufacturing costs.

[0085] <<3. Modification of the first embodiment>> In the above-described first embodiment, the read electrodes 508A, 608 are provided for each pixel (solid-state imaging device 100). However, in the embodiment of the present disclosure, the read electrodes 508A, 608 are not limited to being provided for each pixel. For example, the read electrodes 508A, 608 may be shared for a plurality of pixels. Therefore, with reference to Figs. 9 to 12, a case in which the read electrodes 508A, 608 are shared by four pixels will be described as a modified example of the first embodiment.

[0086] Fig. 9 is a cross-sectional view of the solid-state imaging element 100 taken along line AA' in Fig. 3. Fig. 10 is a cross-sectional view of the solid-state imaging element 100 taken along line BB' in Fig. 3. Fig. 11 is a cross-sectional view of the solid-state imaging element 100 taken along line CC' in Fig. 3. Fig. 12 is a cross-sectional view of the solid-state imaging element 100 taken along line DD' in Fig. 3. Note that Figs. 9 to 12 show cross sections of four pixels (four solid-state imaging elements 100).

[0087] 9 shows a cross section of the solid-state imaging element 100 cut along line AA' (the interface between the insulating film 606 and the storage electrode 610) shown in FIG. 3, as viewed from above the solid-state imaging element 100. As shown in FIG. 9, one readout electrode 608 is provided for every four pixels. The readout electrode 608 is electrically connected to the through electrode 630.

[0088] 10 shows a cross section of the solid-state imaging element 100 cut along line BB' (the interface between the insulating film 640 and the electrode 673) shown in FIG. 3, as viewed from above the solid-state imaging element 100. As shown in FIG. 10, the through electrode 630 is electrically connected to the electrode 673. One electrode 673 is formed for every four pixels. The size of the electrode 673 is smaller than the combined size of the four pixels.

[0089] 11 shows a cross section of the solid-state imaging element 100 cut along line CC' (the interface between the insulating film 580 and the electrode 573) shown in FIG. 3, as viewed from below the solid-state imaging element 100. As shown in FIG. 11, the through electrode 560 is electrically connected to the electrode 573. One electrode 673 is formed for every four pixels. The size of the electrode 573 is approximately the same as that of the electrode 673, and is smaller than the combined size of the four pixels.

[0090] 12 shows a cross section of the solid-state imaging element 100 cut along line DD' (the interface between the insulating film 506 and the storage electrode 510) shown in FIG. 3, as viewed from above the solid-state imaging element 100. As shown in FIG. 12, the readout electrode 508A is electrically connected to the wiring 530A that connects to the through electrode 460A. The electrode 508B that is electrically connected to the through electrode 560 is electrically connected to the wiring 530B that connects to the through electrode 460B. The readout electrode 508A and the electrode 508B are formed for every four pixels.

[0091] <<4. Second embodiment>> In the above-described first embodiment, the solid-state imaging element 100 is a solid-state imaging element in which the read electrode 508 of the PD500 is electrically connected to the through electrode 460A, and the read electrode 608 of the PD600 is electrically connected to the through electrode 460B. However, the embodiment of the present disclosure is not limited to such a configuration, and may be a solid-state imaging element 100a in which the through electrode (shared through electrode) 460 is shared by the PDs 500 and 600. Therefore, with reference to Figs. 13 to 18, a solid-state imaging element 100a in which the through electrode 460 is shared by the PDs 500 and 600 will be described as a second embodiment of the present disclosure.

[0092] <4.1 Stacked structure of the solid-state imaging device 100a> First, the stacked structure of the solid-state imaging device 100a according to this embodiment will be described with reference to FIG. 13. FIG. 13 is a cross-sectional view of the pixel array section 10a according to this embodiment. As shown in FIG. 13, the solid-state imaging device 100a according to this embodiment has the same configuration as the above-mentioned first embodiment, except that the through electrode 460 is shared by the PDs 500 and 600. Therefore, the description of the same configuration as the first embodiment will be omitted. In this embodiment, a part of the pixel transistors provided in the semiconductor substrate 300 is shared by the PDs 500 and 600 provided above the semiconductor substrate 300. That is, in this embodiment, a part of the pixel transistors can be said to be a common pixel transistor shared by the PDs 500 and 600.

[0093] In addition, in this embodiment, a portion of the multiple floating diffusion sections (common charge storage sections) 314 is provided in common to the PDs 500 and 600, in other words, shared by the PDs 500 and 600, in order to temporarily store the charges generated in the PDs 500 and 600.

[0094] In this embodiment, as shown in FIG. 13, a through electrode 460 shared by the PDs 500 and 600 is provided to penetrate the semiconductor substrate 300 in order to extract the charge generated in the PDs 500 and 600 to the wiring 230. The through electrode 460 can be formed of a metal film such as Cu, W, Al, etc. In addition, in order to prevent a short circuit between the through electrode 460 and the semiconductor substrate 300, an insulating film 462 made of SiO2 or the like is provided to cover the outer periphery of the through electrode 460. Furthermore, in this embodiment, a barrier metal film (not shown) may be provided between the through electrode 460 and the insulating film 462 surrounding the outer periphery of the through electrode 460. The barrier metal film can be formed of a material such as titanium nitride (TiN), tungsten nitride (WN), titanium (Ti), tantalum nitride (TaN), tantalum (Ta), zirconium (Zr), Ru, Co, etc.

[0095] The through electrode 460 can electrically connect the read electrodes (lower electrodes) 508, 608 of the PDs 500, 600 to the floating diffusion section 314 provided in the semiconductor substrate 300 via the wiring 230 provided in the wiring layer 200. Therefore, the floating diffusion section 314 can temporarily store charges generated by photoelectric conversion in the PDs 500, 600 by the through electrode 460. Furthermore, the through electrode 460 can electrically connect the read electrodes 508, 608 of the PDs 500, 600 to pixel transistors provided in the semiconductor substrate 300.

[0096] The through electrode 460 can be formed as follows. For example, a through hole penetrating the semiconductor substrate 300 is created, and the insulating film 462 and the barrier metal are deposited by a physical vapor deposition (PVD) method, a chemical vapor deposition (CVD) method, an atomic layer deposition (ALD) method, or the like so as to cover the inner wall of the through hole. Furthermore, for example, after etching the deposited insulating film 462 and the barrier metal, a metal film such as Cu, W, Al, or the like is deposited by a plating method, a CVD method, a PVD method, or an ALD method so as to fill the through hole. In this manner, the through electrode 460 can be formed.

[0097] <4.2 Layout configuration of the solid-state imaging device 100a> The stacked structure of the solid-state imaging element 100a according to this embodiment has been described above. Next, the layout configuration of the solid-state imaging element 100a according to this embodiment will be described with reference to Fig. 14. Fig. 14 is a cross-sectional view of the solid-state imaging element 100a taken along line D1-D1' in Fig. 13. Note that Fig. 14 shows a cross section of four pixels (four solid-state imaging elements 100a).

[0098] 14 shows a cross section of the solid-state imaging element 100a cut along line D1-D1' (the interface between the insulating film 506 and the storage electrode 510) shown in FIG. 13, as viewed from above the solid-state imaging element 100a. As shown in FIG. 14, the readout electrode 508 is electrically connected to the wiring 530 that is connected to the through electrode 460. The readout electrode 508 is also electrically connected to the through electrode 560.

[0099] Fig. 15 is a cross-sectional view of the solid-state imaging element 100a taken along the line D1-D1' in Fig. 13. Fig. 14 shows a case where a readout electrode 508 is provided for each pixel, but the readout electrode 508 can be shared by a plurality of pixels as shown in the first modification of the first embodiment. Fig. 15 shows a case where one readout electrode 508 is shared by four pixels.

[0100] As described above, in this embodiment, the different PDs 500 and 600 share one floating diffusion section 314 and one through electrode 460. Therefore, according to this embodiment, it is possible to avoid an increase in the processing area of ​​the semiconductor substrate 300 due to the formation of the through electrode 460, and to avoid a reduction in the incident surface of the PD 400, so that the amount of light incident on the PD 400 does not decrease, and it is possible to avoid a decrease in the sensitivity characteristics of the PD 400. Furthermore, according to this embodiment, the different PDs 500 and 600 share the floating diffusion section 314 and the through electrode 460, so that it is possible to avoid an increase in the area of ​​the chip on which the solid-state imaging device 1 is mounted. As a result, according to this embodiment, it is possible to avoid an increase in the manufacturing cost of the solid-state imaging device 1. In addition, according to this embodiment, the different PDs 500 and 600 share one through electrode 460, so that it is possible to reduce the number of through electrodes 460 penetrating the semiconductor substrate 300. As a result, according to this embodiment, it is possible to avoid a deterioration in the dark current characteristics of the solid-state imaging device 1 caused by a decrease in the crystallinity of the semiconductor substrate 300.

[0101] <4.3 Equivalent circuit of the solid-state imaging device 100a> The layout configuration of the solid-state imaging device 100a according to this embodiment has been described above. Next, an equivalent circuit of the solid-state imaging device 100a according to this embodiment, specifically, an equivalent circuit of the PDs 500 and 600 will be described with reference to Fig. 16. Fig. 16 is an equivalent circuit diagram of the PDs 500 and 600 of the solid-state imaging device 100a according to this embodiment.

[0102] As described above, in this embodiment, the PDs 500 and 600 have common electrodes 502 and 602, readout electrodes 508 and 608, and photoelectric conversion films 504 and 604 sandwiched therebetween. Furthermore, the PDs 500 and 600 have storage electrodes 510 and 610 that contact the photoelectric conversion films 504 and 604 via insulating films 506 and 606.

[0103] As shown in FIG. 16, the readout electrodes 508 and 608 include a reset transistor TR1 for resetting the accumulated charge. rst The reset transistor TR1 is electrically connected to one of the drain and source of the reset transistor TR1 via a wiring or the like. rst The gate of the reset transistor TR1 is electrically connected to the reset signal line RST1 and is further electrically connected to the vertical drive circuit unit 32. rst The other of the drain / source (the side not connected to the readout electrodes 508, 608) is connected to a power supply circuit (power supply potential V DD ) in the present embodiment, as shown in FIG. rst can be said to be a common pixel transistor shared by PD500 and 600.

[0104] Furthermore, the readout electrodes 508 and 608 include an amplifier transistor TR1 that converts the charge into a voltage and outputs it as a pixel signal. amp The read electrodes 508 and 608 and the amplifier transistor TR1 are electrically connected to the gate of the amplifier transistor TR1 through wiring. amp Gate and reset transistor TR1 rst The node FD1 that connects one of the drain / sources of the reset transistor TR1 rst In addition, the node FD1 also functions as the floating diffusion portion 314 shared by the PDs 500 and 600. The charge from the read electrodes 508 and 608 changes the potential of the node FD1, and the charge from the read electrodes 508 and 608 changes the potential of the amplifier transistor TR1. amp The amplifier transistor TR1 converts the ampOne of the source and drain of the selection transistor TR1 outputs the pixel signal obtained by conversion to the signal line VSL1 in accordance with a selection signal. sel The amplifier transistor TR1 is electrically connected to one of the source and drain of the amplifier transistor TR1 via a wiring. amp The other of the source / drain of the selection transistor TR1 sel The side not connected to the power supply circuit (power supply potential V DD ) is electrically connected to the amplifier transistor TR1. amp and selection transistor TR1 sel can be said to be a common pixel transistor shared by PD500 and 600.

[0105] Furthermore, the selection transistor TR1 sel The other source / drain of the amplifier transistor TR1 amp The side of the selection transistor TR1 (not connected to the signal line VSL1) is electrically connected to the signal line VSL1 that transmits the converted voltage as a pixel signal, and is further electrically connected to the column signal processing circuit unit 34. sel The gate of this pixel is electrically connected to a selection line SEL1 that selects a row for outputting a pixel signal, and is further electrically connected to the vertical drive circuit unit 32 described above.

[0106] 16, the storage electrodes 510, 610 are electrically connected to voltage application lines ASE1, ASE2, respectively. As described above, the storage electrodes 510, 610 can attract charges generated in the photoelectric conversion films 504, 604 in response to an applied potential, and store the charges in the photoelectric conversion films 504, 604, or transfer the charges to the readout electrodes 508, 608. Furthermore, the common electrodes 502, 602 are electrically connected to a selection line (not shown) that selects a column from which a pixel signal is output.

[0107] Next, for reference, an equivalent circuit of the PD 400 will also be described with reference to Fig. 17. Fig. 7 is an equivalent circuit diagram of the PD 400 included in the solid-state imaging device 100a according to this embodiment.

[0108] As shown in FIG. 17, the PD 400 provided in the semiconductor substrate 300 includes a pixel transistor (amplification transistor TR2 amp , transfer transistor TR trs , reset transistor TR2 rst , selection transistor TR2 sel ) via wiring. In detail, one side of the PD 400 is connected to a transfer transistor TR trs The transfer transistor TR trs The other source / drain of the reset transistor TR2 (the side not connected to PD400) rst The transfer transistor TR is electrically connected to one of the source and drain of the transfer transistor TR via a wiring. trs The gate of the reset transistor TR2 is electrically connected to the transfer gate line TG and is further connected to the vertical drive circuit unit 32. rst The other of the source / drain of the transfer transistor TR trs The side not connected to the power supply circuit (power supply potential V DD ) is electrically connected to the reset transistor TR2. rst The gate of this pixel is electrically connected to a reset line RST2, and is further connected to the vertical drive circuit section 32 described above.

[0109] Furthermore, the transfer transistor TR trs The other of the source / drain (the side not connected to the PD 400) is an amplifier transistor TR2 that amplifies (converts) the charge and outputs it as a pixel signal. amp The gate of the amplifier transistor TR2 is also electrically connected to the gate of the amplifier transistor TR3 through a wiring. amp One of the source and drain of the selection transistor TR2 outputs the pixel signal to the signal line VSL2 in accordance with a selection signal. sel The amplifier transistor TR2 is electrically connected to one of the source and drain of the amplifier transistor TR1 through a wiring. amp The other of the source / drain of the selection transistor TR2 selThe side not connected to the power supply circuit (power supply potential V DD ) is electrically connected to the selection transistor TR2. sel The other of the source / drain of the amplifier transistor TR2 amp The side not connected to the selection transistor TR2 is electrically connected to the signal line VSL2 and is further electrically connected to the column signal processing circuit unit 34. sel The gate of is electrically connected to the selection line SEL2, and further to the vertical drive circuit section 32 described above.

[0110] <4.4 Reading Method of Solid-State Imaging Device 100a> The equivalent circuit of the solid-state imaging element 100a according to this embodiment has been described above. Next, a readout method of the solid-state imaging element 100a according to this embodiment will be described with reference to Fig. 18. Fig. 18 is an explanatory diagram for explaining the readout method of the solid-state imaging element 100a according to this embodiment.

[0111] First, in this embodiment, a reset operation is performed as shown on the left side of Fig. 18. In this reset operation, the potential of the selection line SEL1 is set to 0V, and the potential of the reset line RST1 is set to 0V at the start, but when the power supply potential V DD Next, the potential of the reset line RST1 is switched to the power supply potential V DD At the same time, the potential of the storage electrode 510 of the PD 500 is changed to the power supply potential V DD to 0V, and after a certain time has elapsed, the power supply potential V DD Then, the potential of the storage electrode 510 of the PD 500 is returned to the power supply potential V DD At the same time, the potential of the storage electrode 610 of the PD 600 is changed to the power supply potential V DD to 0V, and after a certain time has elapsed, the power supply potential V DD Furthermore, the potential of the storage electrode 610 of the PD 600 is returned to the power supply potential V DDAt the same time, the potential of the reset line RST1 is returned to 0 V. By such a reset operation, the charges accumulated in the photoelectric conversion films 504 and 604 of the PDs 500 and 600 can be reset.

[0112] Next, in this embodiment, as shown in the center of Fig. 18, exposure, that is, an exposure operation in which charges are accumulated by photoelectric conversion in the photoelectric conversion films 504, 604 of the PDs 500, 600 is performed. In this exposure operation, the potentials of the selection line SEL1 and the reset line RST1 are maintained at 0V. Meanwhile, the potentials of the storage electrodes 510 of the PDs 500 and 610 of the PDs 600 are set to the power supply potential V DD By such an exposure operation, charges are accumulated in the photoelectric conversion films 504 and 604 of the PDs 500 and 600 as if they are attracted to the storage electrodes 510 and 610.

[0113] Furthermore, in this embodiment, as shown on the right side of FIG. 18, a read operation of the charges stored in the photoelectric conversion films 504 and 604 of the PDs 500 and 600 is performed. In this read operation, the potential of the selection line SEL1 is set to the power supply potential V DD Next, the potential of the reset line RST1 is changed from 0 V to the power supply potential V DD Then, after a predetermined time has elapsed, the voltage is switched back to 0 V. In this way, the charge stored in the floating diffusion section 314 is reset. Next, the potential of the storage electrode 510 of the PD 500 is switched to the power supply potential V DD to 0V, and after a certain time has elapsed, the power supply potential V DD In this way, the charge accumulated in the photoelectric conversion film 504 is attracted to the storage electrode 510 and transferred to the floating diffusion section 314 via the readout electrode 508. The charge transferred to the floating diffusion section 314 is then further transferred to the amplifying transistor TR1. amp The signal is converted into a voltage by the digital converter 20 and read out as a pixel signal.

[0114] Next, change the potential of the reset line RST1 from 0V to the power supply potential V DD Then, after a predetermined time has elapsed, the voltage is switched back to 0 V. In this way, the charge stored in the floating diffusion section 314 is reset. Then, the potential of the storage electrode 610 of the PD 600 is switched to the power supply potential V DD to 0V, and after a certain time has elapsed, the power supply potential V DD In this way, the charge accumulated in the photoelectric conversion film 604 is attracted to the storage electrode 610 and transferred to the floating diffusion section 314 via the readout electrode 608. In this way, the charge accumulated in the photoelectric conversion film 604 of the PD 600 is read out. The charge transferred to the floating diffusion section 314 is then further transferred to the amplifying transistor TR1. amp The signal is converted into a voltage by the digital converter 20 and read out as a pixel signal.

[0115] In this manner, a series of operations such as the reset operation, exposure operation, and read operation are completed. That is, in the read method according to this embodiment, the electric charges stored in the photoelectric conversion films 504, 604 can be sequentially transferred to the read electrodes 508, 608 with a time difference by controlling the electric potentials applied to the storage electrodes 510, 610. Furthermore, in this embodiment, the electric charges sequentially transferred to the read electrodes 508, 608 can be sequentially stored in the floating diffusion section 314 and sequentially read out.

[0116] As described above, in this embodiment, by performing the above-mentioned operation, it is possible to temporarily store charges in the photoelectric conversion films 504, 604 of the PDs 500, 600. In this embodiment, by performing the above-mentioned operation, the charges stored in the photoelectric conversion films 504, 604 can be transferred sequentially to the read electrodes 508, 608 with a time difference, and can be stored sequentially in the floating diffusion section 314 with a time difference. Therefore, according to this embodiment, since the charges can be transferred sequentially with a time difference, one floating diffusion section 314 and one through electrode 460 can be shared in different PDs 500, 600.

[0117] As a result, in this embodiment, different PDs 500 and 600 can share one floating diffusion section 314 and one through electrode 460. Therefore, according to this embodiment, it is possible to avoid an increase in the processing area of ​​the semiconductor substrate 300 due to the formation of the through electrode 460, and to avoid a reduction in the incident surface of the PD 400, so that the amount of light incident on the PD 400 does not decrease, and it is possible to avoid a decrease in the sensitivity characteristics of the PD 400. Furthermore, according to this embodiment, different PDs 500 and 600 share the floating diffusion section 314 and the through electrode 460, so that it is possible to avoid an increase in the area of ​​the chip on which the solid-state imaging device 1 is mounted. As a result, according to this embodiment, it is possible to avoid an increase in the manufacturing cost of the solid-state imaging device 1. In addition, according to this embodiment, different PDs 500 and 600 share the through electrode 460, so that it is possible to reduce the number of through electrodes 460 penetrating the semiconductor substrate 300. As a result, according to this embodiment, it is possible to avoid a deterioration in the dark current characteristics of the solid-state imaging device 1 caused by a decrease in the crystallinity of the semiconductor substrate 300.

[0118] <<5. Third embodiment>> In the above-described second embodiment, the solid-state imaging element 100a is a solid-state imaging element in which blue light is photoelectrically converted by the photoelectric conversion film 604 formed above the semiconductor substrate 300, green light is photoelectrically converted by the photoelectric conversion film 504 provided below the PD 600, and red light is photoelectrically converted by the PD 400 provided in the semiconductor substrate 300. However, the embodiment of the present disclosure is not limited to such a configuration, and may be a solid-state imaging element 100b in which blue light, green light, and red light are photoelectrically converted by three photoelectric conversion films stacked on the semiconductor substrate 300. Therefore, with reference to FIG. 19, a stacked structure of a solid-state imaging element 100b having three photoelectric conversion films 504, 604, and 704 stacked on the semiconductor substrate 300 will be described as a third embodiment of the present disclosure. Figure 19 is a cross-sectional view of the pixel array section 10b of this embodiment. In detail, the pixel array section 10b includes solid-state imaging elements 100b having three photoelectric conversion films 504, 604, 704 stacked on a semiconductor substrate 300, arranged in a matrix.

[0119] 19, the solid-state imaging device 100b according to this embodiment has the same configuration as that of the above-described second embodiment from the wiring layer 200 to the PD 600, except that the PD 400 is not provided in the semiconductor substrate 300. Therefore, the detailed configuration from the wiring layer 200 to the PD 600 will not be described here.

[0120] In this embodiment, the through electrode 660 is provided so as to penetrate a part of the insulating film 650 and the PD600 from the electrode 674 to the read electrode 608 of the PD600, as shown in FIG. 19. In this embodiment, the electrodes 674 and 774 are bonded to each other at the bonding surface JS2. The through electrode 660 and the wiring 730 are electrically connected via the electrodes 674 and 774. In this embodiment, the electrode 674 is provided on the bonding surface JS2 of the PD600, and the electrode 774 is provided on the bonding surface JS2 of the PD700. Therefore, in this embodiment, it can be said that the PD600 and the PD700 are bonded to each other at the bonding surfaces JS2 that face each other.

[0121] In this embodiment, the read electrode 708 of the PD700 is electrically connected to the read electrode 608 of the PD600 through the wiring 730 and the through electrode 660. Furthermore, the read electrode 708 of the PD700 is electrically connected to the floating diffusion section 314 provided in the semiconductor substrate 300 through the through electrodes 460, 560, and 660. Therefore, the floating diffusion section 314 can temporarily store the charge generated by the photoelectric conversion in the PD700 through the through electrodes 460, 560, and 660. Furthermore, the through electrode 660 can electrically connect the read electrode 708 of the PD700 to the pixel transistor provided in the semiconductor substrate 300 through the through electrode 560 and the through electrode 460. Note that in this embodiment, the through electrode 660 may penetrate a part of the insulating film 650 and the PD600, or may penetrate only the PD600, and is not particularly limited.

[0122] In this embodiment, the through electrode 660 can be formed of a metal film such as Cu, similar to the through electrode 560 described above. An insulating film 662 made of SiO2 or the like may be provided around the outer periphery of the through electrode 660 in order to prevent a short circuit between the through electrode 660 and the PD 600, similar to the through electrode 560 described above. Since the through electrode 660 is similar to the through electrode 560 described above, a detailed description thereof will be omitted here.

[0123] Furthermore, in this embodiment, a PD 700 that converts light into electric charges is provided on the wiring layer 720. In detail, as in the above-mentioned PDs 500 and 600, the PD 700 includes a common electrode (upper electrode) 702, a photoelectric conversion film 704, an insulating film 706, a readout electrode (lower electrode) 708, and a storage electrode 710, which are sequentially laminated. Note that the common electrode 702, the photoelectric conversion film 704, the insulating film 706, the readout electrode 708, and the storage electrode 710 are similar to those of the above-mentioned PDs 500 and 600, and therefore detailed description thereof will be omitted here.

[0124] 19, the readout electrode 708 is electrically connected to the through electrode 560 via the wiring 730 and the through electrode 660. The common electrode 702 is electrically connected to a wiring 770 that applies a desired potential to the common electrode 702. Furthermore, the storage electrode 710 is electrically connected to a wiring 772 that applies a desired potential to the storage electrode 710.

[0125] The solid-state imaging element 100b of this embodiment can perform photoelectric conversion on, for example, blue light in a photoelectric conversion film 704 (PD700) formed above the semiconductor substrate 300, photoelectric conversion on green light in a photoelectric conversion film 604 (PD600) provided below the PD700, and photoelectric conversion on red light in a photoelectric conversion film 504 (PD500) provided below the PD600.

[0126] When the photoelectric conversion film 504 is caused to function as a photoelectric conversion film that detects red light, the photoelectric conversion film 504 can contain, for example, a phthalocyanine dye, a subphthalocyanine dye (subphthalocyanine derivative), or the like.

[0127] According to this embodiment, even in the case of a solid-state imaging element 100b having three photoelectric conversion films 504, 604, and 704 stacked on a semiconductor substrate 300, it is possible to avoid deterioration of characteristics while avoiding an increase in manufacturing costs, as in the second embodiment.

[0128] In detail, also in this embodiment, by performing an operation similar to the readout method of the solid-state imaging device 100a of the second embodiment described above, it is possible to temporarily store charges in the photoelectric conversion films 504, 604, 704 of the PDs 500, 600, 700 by the storage electrodes 510, 610, 710. Therefore, according to this embodiment, the floating diffusion portion 314 and the through electrode 460 can be shared among the different PDs 500, 600, 700.

[0129] As a result, in this embodiment as well, the increase in the processing area of ​​the semiconductor substrate 300 due to the formation of the through electrode 460 can be avoided, and the reduction in the incidence surface of the PD 400 can be avoided, so that the deterioration of the sensitivity characteristics of the PD 400 can be avoided. Furthermore, according to this embodiment, the different PDs 500, 600, and 700 share the floating diffusion section 314 and the through electrode 460, so that the increase in the area of ​​the chip on which the solid-state imaging device 1 is mounted can be avoided, and thus the increase in manufacturing costs can be avoided. In addition, according to this embodiment, the different PDs 500, 600, and 700 share the through electrode 460, so that the number of through electrodes 460 penetrating the semiconductor substrate 300 can be reduced. As a result, according to this embodiment as well, the deterioration of the dark current characteristics of the solid-state imaging device 1 caused by the deterioration of the crystallinity of the semiconductor substrate 300 can be avoided.

[0130] In addition, this embodiment is not limited to a solid-state imaging element 100a having three photoelectric conversion films 504, 604, 704 stacked on a semiconductor substrate 300, but may be, for example, a solid-state imaging element having four or more photoelectric conversion films stacked on a semiconductor substrate 300.

[0131] In the present embodiment, the configuration in which the PD 700 is added to the solid-state imaging device 100a according to the second embodiment has been described, but the present invention is not limited to this. Similarly, the PD 700 may be added to the solid-state imaging device 100 according to the first embodiment.

[0132] <<6. Fourth embodiment>> Furthermore, in the embodiment of the present disclosure, the PDs 500 and 600 may have transfer electrodes 512 and 612 and shield electrodes 514 and 614. Therefore, as a fourth embodiment of the present disclosure, a stacked structure of a solid-state imaging device 100c including PDs 500 and 600 having transfer electrodes 512 and 612 and shield electrodes 514 and 614 will be described with reference to Fig. 20. Fig. 20 is a cross-sectional view of a pixel array section 10c according to this embodiment, and in detail, in the pixel array section 10c, solid-state imaging devices 100c including PDs 500 and 600 having transfer electrodes 512 and 612 and shield electrodes 514 and 614 are arranged in a matrix.

[0133] In detail, in this embodiment, as shown in FIG. 20, the PD 500, 600 is provided between the readout electrode 508, 608 and the storage electrode 510, 610, and further includes a transfer electrode 512, 612 that faces the common electrode 502, 602 through the photoelectric conversion film 504, 604 and the insulating film 506, 606. The transfer electrode 512, 612 is provided between the readout electrode 508, 608 and the storage electrode 510, 610, and is an electrode that controls the transfer of charges. More specifically, a predetermined potential is applied to the transfer electrode 512, 612 during the accumulation period in which charges are accumulated in the photoelectric conversion film 504, 604, and the charge accumulated by being attracted to the storage electrode 510, 510 can be blocked. Furthermore, the transfer electrode 512, 612 is in an open state during the transfer period in which charges are transferred, and the accumulated charge can be easily transferred to the readout electrode 508, 608.

[0134] 20, the PDs 500, 600 further include shield electrodes 514, 614 that are provided between the readout electrodes 508, 608 and the storage electrodes 510, 610 and face the common electrodes 502, 602 via the photoelectric conversion films 504, 604 and the insulating films 506, 606. The shield electrodes 514, 614 are electrodes that are maintained at a predetermined potential, for example, and that suppress leakage of charges from or to the adjacent solid-state imaging elements 100b.

[0135] The transfer electrodes 512, 612 and the shield electrodes 514, 614 can be formed from the same materials as the readout electrodes 508, 608 and the storage electrodes 510, 610. Furthermore, the transfer electrodes 512, 612 and the shield electrodes 514, 614 can be formed simultaneously with the readout electrodes 508, 608 and the storage electrodes 510, 610.

[0136] Here, the layout configuration of the solid-state imaging element 100c according to this embodiment will be described with reference to Fig. 21. Fig. 21 is a cross-sectional view of the solid-state imaging element 100c taken along line D2-D2' in Fig. 20. Note that Fig. 21 shows a cross section of four pixels (four solid-state imaging elements 100c).

[0137] 21 shows a cross section of the solid-state imaging element 100c cut along line A2-A2' (the interface between the insulating film 606 and the storage electrode 610) shown in FIG. 20, as viewed from above the solid-state imaging element 100c. As shown in FIG. 21, the shield electrode 614 is disposed so as to surround the periphery of the storage electrode 610 and the readout electrode 608. The transfer electrode 612 is disposed between the storage electrode 610 and the readout electrode 608. The transfer electrode 512 and the shield electrode 514 are also disposed in the same manner as the shield electrode 614, and therefore are not shown in the figure.

[0138] FIG. 22 is a cross-sectional view of the solid-state imaging device 100c cut along the line A2-A2′ in FIG. 20. FIG. 20 shows a case where a readout electrode 608 is provided for each pixel, but the readout electrode 608 can be shared by a plurality of pixels as shown in the first modification of the first embodiment. FIG. 20 shows a case where one readout electrode 608 is shared by four pixels. In this case, as shown in FIG. 22, the shield electrode 614 surrounds the storage electrode 610 with a portion close to the readout electrode 608 open. In this way, when one readout electrode 608 is shared by four pixels, the shield electrode 614 is arranged to surround the storage electrode 610 with a portion open, and the readout electrode 608 is arranged in the opening of the shield electrode 614. In addition, the transfer electrode 612 is arranged between the storage electrode 610 and the readout electrode 608 so as to surround the readout electrode 608. The transfer electrode 512 and the shield electrode 514 are also arranged in the same manner as the shield electrode 614, and therefore are not shown.

[0139] As described above, according to this embodiment, the PDs 500 and 600 each have the shield electrodes 514 and 614, and therefore the characteristics of the PDs 500 and 600 can be further improved.

[0140] In the present embodiment, the shield electrodes 514 and 614 are added to the solid-state imaging device 100a according to the second embodiment, but the present invention is not limited to this. Similarly, the shield electrodes 514 and 614 may be added to the solid-state imaging device 100 according to the first embodiment.

[0141] <<7. Fifth embodiment>> Furthermore, in the embodiments of the present disclosure, the shape of the electrodes 573, 673 is not limited to a rectangle. Therefore, as a fifth embodiment of the present disclosure, a case where the electrodes 573, 673 are substantially circular will be described with reference to FIG. 23. FIG. 23 is a diagram for explaining the shape of the electrode 673 according to this embodiment. FIG. 23 is a cross-sectional view of the solid-state imaging element 100 cut along line BB' in FIG. 3 in the first embodiment, for example.

[0142] 23 shows a cross section of the solid-state imaging element 100 cut along line BB' (the interface between the insulating film 640 and the electrode 673) shown in FIG. 3, as viewed from above the solid-state imaging element 100. In this embodiment, as shown in FIG. 23, the shape of the electrode 673 is substantially circular. Note that the shape of the electrode 573 is substantially the same as that of the electrode 673, and therefore is not shown in the figure.

[0143] By making the electrodes 573 and 673 substantially circular, it is possible to prevent the four corners from being recessed, as compared with the case where the electrodes are rectangular, and it is possible to avoid the generation of voids.

[0144] Although the electrodes 573, 673 in the first embodiment have a substantially circular shape, the electrodes 573, 673, 674, 774 in the second to fourth embodiments can also have a substantially circular shape.

[0145] In this embodiment, the electrodes 573 and 673 are substantially circular in shape, but the shape is not limited to this. In this embodiment, the electrodes 573 and 673 may have various shapes, such as a polygon.

[0146] <<8. Sixth embodiment>> Furthermore, in the embodiment of the present disclosure, the PDs 500 and 600 may have dummy electrodes 575 and 675. Therefore, as a sixth embodiment of the present disclosure, a stacked structure of a solid-state imaging device 100d having PDs 500 and 600 having dummy electrodes 575 and 675 will be described with reference to Fig. 24. Fig. 24 is a cross-sectional view of a pixel array section 10d according to this embodiment, and in detail, in the pixel array section 10d, solid-state imaging devices 100d including PDs 500 and 600 having dummy electrodes 575 and 675 are arranged in a matrix.

[0147] 24, in this embodiment, the PD500 further includes a dummy electrode 575 on the joint surface JS and between the electrodes 573 of the solid-state imaging elements 100d. Similarly, the PD600 further includes a dummy electrode 675 on the joint surface JS and between the electrodes 673 of the solid-state imaging elements 100d.

[0148] The dummy electrodes 575 and 675 can be formed from the same material as the above-mentioned electrodes 573 and 673. Furthermore, the dummy electrodes 575 and 675 can be formed simultaneously with the above-mentioned electrodes 573 and 673.

[0149] Here, the layout configuration of the solid-state imaging element 100c according to this embodiment will be described with reference to Fig. 25. Fig. 25 is a cross-sectional view of the solid-state imaging element 100d taken along line B3-B3' in Fig. 24. Fig. 25 shows a cross section in the case where one readout electrode 508, 608 is shared by four pixels (four solid-state imaging elements 100d).

[0150] In this embodiment, as shown in Fig. 25, a plurality of dummy electrodes 675 are arranged around the electrode 673. In this embodiment, the electrode 673 is formed to be smaller than the size of the electrode 673 of the solid-state imaging device 100 shown in Fig. 5, for example. Note that the dummy electrode 575 is formed in the same manner as the dummy electrode 675, and is therefore not shown in the figure.

[0151] Here, the effect of providing the dummy electrodes 575, 675 in this embodiment will be described with reference to Figures 26 and 27. Figures 26 and 27 are diagrams for explaining the effect of providing the dummy electrodes 575, 675 according to this embodiment.

[0152] 26, a case where the electrode 673 is formed when the dummy electrode 675 is not provided will be described. When the electrode 673 is formed, the transparent conductive layer 676 formed on the insulating film 640 is planarized by, for example, a chemical mechanical polishing (CMP) method or a dry etching method to form the electrode 673. At this time, if the area of ​​the electrode 673, which has a larger polishing rate than the insulating film 640, is large and the difference in density between the insulating film 640 and the electrode 673 is large, the electrode 673 is planarized, and steps are generated in the insulating film 640 and the electrode 673 due to dishing or erosion.

[0153] On the other hand, by providing the dummy electrode 675, the difference in density between the electrode 673 and the dummy electrode 675 and the insulating film 640 can be reduced, and dishing and erosion of the electrode 673 can be suppressed, as shown in Fig. 27. This makes it possible to suppress steps between the insulating film 640, the electrode 673, and the dummy electrode 675.

[0154] In this embodiment, a plurality of dummy electrodes 675 are arranged around electrode 673, but this is not particularly limited, and the number of dummy electrodes 675 may be one.

[0155] <<9. Seventh embodiment>> Furthermore, in the embodiment of the present disclosure, the electrodes 573a, 673a may have openings. Therefore, as a seventh embodiment of the present disclosure, a stacked structure of a solid-state imaging device 100e having PDs 500, 600 having electrodes 573a, 673a will be described with reference to Fig. 28. Fig. 28 is a cross-sectional view of a pixel array section 10e according to this embodiment, and in detail, the solid-state imaging devices 100e including PDs 500, 600 having electrodes 573a, 673a are arranged in a matrix in the pixel array section 10e.

[0156] Here, the layout configuration of the solid-state imaging element 100e according to this embodiment will be described with reference to Fig. 29. Fig. 29 is a cross-sectional view of the solid-state imaging element 100e taken along line B4-B4' in Fig. 28. Fig. 29 shows a cross section in the case where one readout electrode 508, 608 is shared by four pixels (four solid-state imaging elements 100e).

[0157] In this embodiment, as shown in Fig. 29, the electrode 673a has a lattice shape with four square openings. By forming the electrode 673a in a lattice shape in this way, the difference in density between the insulating film 640 and the electrode 673a can be reduced, and erosion during the formation of the electrode 673a can be suppressed, as in the sixth embodiment. Note that the electrode 573a has the same shape as the electrode 673a, so it is not shown in the figure.

[0158] As described above, according to this embodiment, by forming the electrodes 573a and 673a in a lattice shape, the electrodes 573a and 673a are easily joined even if a joining misalignment occurs at the joining surface JS, while the density difference between the insulating film 640 and the electrodes 573a and 673a (area ratio of the electrodes 573a and 673a) is minimized, and the through electrode 630 and the through electrode 560 can be more reliably electrically connected. Furthermore, by forming the electrodes 573a and 673a in a lattice shape, the area density of the electrodes 573a and 673a becomes uniform when viewed from the direction in which light is incident on the solid-state imaging element 100e (upper side in FIG. 28), even if a joining misalignment occurs at the joining surface JS, so that the light incident on the solid-state imaging element 100e becomes optically uniform. Furthermore, since the area density of the electrodes 573a and 673a is uniform, the electrodes 573a and 673a can be formed accurately and uniformly.

[0159] The shape of the electrodes 573a and 673a is not limited to the shape shown in FIG. 29. FIG. 30 is a cross-sectional view of the solid-state imaging element 100e cut along the line B4-B4' in FIG. 28, and FIG. 31 is a cross-sectional view of the solid-state imaging element 100e cut along the line B4-B4' in FIG. 28. As shown in FIG. 30, the electrode 673a may be a lattice shape in which eight square openings are formed in a matrix shape. Alternatively, as shown in FIG. 31, the electrode 673a may be a shape in which openings larger than the electrode 673a shown in FIG. 29 are formed, and the width of the lattice is narrow. The electrode 573a has the same shape as the electrode 673a, so it is omitted from the illustration. Thus, the number of openings and the width of the lattice of the electrodes 573a and 673a in this embodiment can take various values.

[0160] The shape of the electrodes 573a, 673a and the shape of the openings formed in the electrodes 573a, 673a are not limited to a rectangle. The shape of the electrodes 573a, 673a may be substantially circular as shown in the fifth embodiment. Also, the shape of the openings formed in the electrodes 573a, 673a may be substantially circular. In this way, the electrodes 573a, 673a and the openings formed in the electrodes 573a, 673a may have various shapes.

[0161] <<10. Eighth embodiment>> Furthermore, in the embodiment of the present disclosure, the electrodes 573f, 673f may have different sizes. Therefore, as an eighth embodiment of the present disclosure, a stacked structure of a solid-state imaging element 100f having PDs 500, 600 having electrodes 573f, 673f of different sizes will be described with reference to Fig. 32. Fig. 32 is a cross-sectional view of a pixel array section 10f according to this embodiment, and in detail, in the pixel array section 10f, solid-state imaging elements 100f including PDs 500, 600 having electrodes 573f, 673f are arranged in a matrix.

[0162] Here, the layout configuration of the solid-state imaging element 100f according to this embodiment will be described with reference to Fig. 33 and Fig. 34. Fig. 33 is a cross-sectional view of the solid-state imaging element 100f taken along line B5-B5' in Fig. 32. Fig. 34 is a cross-sectional view of the solid-state imaging element 100f taken along line C5-C5' in Fig. 32. Figs. 33 and 34 show a cross section in the case where one readout electrode 508, 608 is shared by four pixels (four solid-state imaging elements 100f).

[0163] 33 and 34, in this embodiment, the length d1 of one side of the electrode 673f as viewed from the direction in which light of the solid-state imaging element 100f is incident is shorter than the length d2 of one side of the electrode 573f as viewed from the direction in which light of the solid-state imaging element 100f is incident. Thus, in this embodiment, the electrode 673f is formed smaller than the electrode 573f on the surface (bonding surface JS) in contact with the electrode 573f.

[0164] As described above, according to this embodiment, by forming the electrodes 573f, 673f to different sizes, even if the sizes suitable for a manufacturing process differ for the electrodes 573f, 673f, it becomes possible to select the size suitable for the manufacturing process.

[0165] <<11. Ninth embodiment>> Furthermore, in the embodiment of the present disclosure, the PDs 500 and 600 may have stopper layers 577 and 677. Therefore, as a ninth embodiment of the present disclosure, a stacked structure of a solid-state imaging element 100g having PDs 500 and 600 having stopper layers 577 and 677 will be described with reference to Fig. 35. Fig. 35 is a cross-sectional view of a pixel array section 10g according to this embodiment, and in detail, in the pixel array section 10g, solid-state imaging elements 100g including PDs 500 and 600 having stopper layers 577 and 677 are arranged in a matrix.

[0166] In this embodiment, as shown in FIG. 35, the stopper layer 577 is formed to face the common electrode 502 via an insulating film 580. The stopper layer 677 is formed to face the storage electrode 610 via an insulating film 640. The stopper layers 577, 677 are formed, for example, in a region excluding the region on the junction surface JS where the electrodes 573, 673 are formed. The stopper layers 577, 677 only need to have a polishing rate of, for example, 0.1 times or less compared to the electrodes 573, 673, and are formed, for example, of SiNx (silicon nitride film). In this way, the stopper layers 577, 677 are formed of a hard insulating material.

[0167] Here, the layout configuration of the solid-state imaging element 100g according to this embodiment will be described with reference to Fig. 36. Fig. 36 is a cross-sectional view of the solid-state imaging element 100g cut along line B6-B6' in Fig. 35. Fig. 36 shows a cross section in the case where one read electrode 508, 608 is shared by four pixels (four solid-state imaging elements 100g). In this embodiment, as shown in Fig. 36, a stopper layer 677 is formed around the electrode 673. The stopper layer 577 is also disposed in the same manner as the stopper layer 677, and is therefore not shown.

[0168] Next, a method for manufacturing the solid-state imaging element 100g according to this embodiment will be described with reference to Fig. 37. Fig. 37 is a diagram for explaining the method for manufacturing the solid-state imaging element 100g according to this embodiment. Note that in Fig. 37, only the reference symbols used in the description are given, and the illustration of the other reference symbols is omitted.

[0169] First, as shown in FIG. 37(a), a stopper layer 577 is formed on the semiconductor substrate 300 on which an insulating film 580 is formed. Then, as shown in FIG. 37(b), a part of the stopper layer 577 is opened by dry etching. Thereafter, as shown in FIG. 37(c), a transparent conductive layer 578 is formed above the stopper layer 577 of the semiconductor substrate 300, and the transparent conductive layer 578 is planarized by, for example, a method or a dry etching method to form an electrode 573 as shown in FIG. 37(d). At this time, since the stopper layer 577 is formed, the film loss of the electrode 573 can be suppressed, and the step between the electrode 573 and the insulating film 580 can be reduced.

[0170] 37(d), a semiconductor substrate 900 in which a stopper layer 677 and an electrode 673 are formed on a wiring layer 620 is bonded to a semiconductor substrate 300. The stopper layer 677 and the electrode 673 can be configured similarly to the stopper layer 577 and the electrode 573. The subsequent manufacturing method is the same as the manufacturing method shown in FIG. 8, and therefore description thereof will be omitted.

[0171] As described above, in the solid-state imaging element 100g of this embodiment, by providing the stopper layers 577, 677 on the bonding surface JS, film reduction of the electrodes 573, 673 during the planarization process of the electrodes 573, 673 can be suppressed, and the bonding surface JS can be formed even flatter.

[0172] Here, the case where the stopper layers 577, 677 are added to the solid-state imaging element 100 shown in Fig. 9 to Fig. 12 has been described, but the present invention is not limited thereto. For example, the stopper layers 577, 677 may be added to the solid-state imaging element 100 shown in Fig. 3 to Fig. 7 or the solid-state imaging elements 100a to 100f shown in other embodiments. For example, as shown in Fig. 29 to Fig. 31, by adding the stopper layers 577, 677 to the solid-state imaging element 100e in which the area ratio of the electrodes 573a, 673a is reduced by forming holes in the electrodes 573a, 673a, the area ratio of the stopper layers 577, 677 on the bonding surface JS can be increased, and the performance as a stopper can be improved.

[0173] <<12. Tenth embodiment>> In the ninth embodiment, the solid-state imaging element 100g is described as having the stopper layers 577 and 677. In addition, in the embodiment of the present disclosure, the PD500 may have a stopper layer 579. Then, as the tenth embodiment of the present disclosure, a stacked structure of a solid-state imaging element 100h having a PD500 having a stopper layer 579 will be described with reference to Fig. 38. Fig. 38 is a cross-sectional view of a pixel array section 10h according to this embodiment. In detail, in the pixel array section 10h, solid-state imaging elements 100h including PD500 having a stopper layer 579 are arranged in a matrix.

[0174] 38, the stopper layer 579 is formed between the insulating film 580 and the electrode 573. Similar to the stopper layers 577, 677, the stopper layer 579 only needs to have a polishing rate of, for example, 0.1 times or less compared to the electrodes 573, 673, and is made of, for example, SiNx.

[0175] Here, the refractive indexes of the insulating film 580, the stopper layer 579, and the electrode 573 increase in this order: insulating film 580, stopper layer 579, and electrode 573. This makes it possible to reduce the refractive index difference at the interface of the electrode 573 compared to a case where there is no stopper layer 579, thereby improving the light-collecting characteristics of light incident on the solid-state imaging device 100h.

[0176] Here, the layout configuration of the solid-state imaging element 100g according to this embodiment will be described with reference to FIG. 39. FIG. 39 is a cross-sectional view of the solid-state imaging element 100h cut along the line B7-B7' in FIG. 38. FIG. 38 shows a cross-section in which one read electrode 508, 608 is shared by four pixels (four solid-state imaging elements 100h). In this embodiment, as shown in FIG. 38, a stopper layer 677 is formed around the electrode 673. The stopper layer 679 has substantially the same shape as the electrode 673 in a cross-section of the solid-state imaging element 100h cut in the stacking direction of the stacked structure.

[0177] Next, a method for manufacturing the solid-state imaging element 100h according to the present embodiment will be described with reference to Fig. 40. Fig. 40 is a diagram for explaining a method for manufacturing the solid-state imaging element 100h according to the present embodiment. Note that in Fig. 40, only the reference symbols used in the description are given, and the illustration of the other reference symbols is omitted.

[0178] First, as shown in FIG. 40(a), a part of the insulating film 580 is etched by dry etching. As shown in FIG. 40(b), stopper layers 577 and 579 are formed on the etched insulating film 580. Then, as shown in FIG. 40(c), a part of the stopper layer 577 is opened by dry etching to connect the electrode 573 and the through electrode 560. Thereafter, as shown in FIG. 40(d), a transparent conductive layer 578 is formed above the stopper layers 577 and 579 of the semiconductor substrate 300, and the transparent conductive layer 578 is flattened by, for example, a CMP method or a dry etching method to form the electrode 573 as shown in FIG. 40(e). At this time, since the stopper layer 577 is formed, the film loss of the electrode 573 can be suppressed, and the step between the electrode 573 and the insulating film 580 can be reduced.

[0179] 40(e), a semiconductor substrate 900 having a stopper layer 677 and an electrode 673 formed on a wiring layer 620 is bonded to a semiconductor substrate 300. The stopper layer 677 and the electrode 673 can be configured similarly to the stopper layer 577 and the electrode 573. The subsequent manufacturing method is the same as the manufacturing method shown in FIG. 8, and therefore description thereof will be omitted.

[0180] As described above, in the solid-state imaging element 100h of this embodiment, by providing a stopper layer 579 between the insulating film 580 and the electrode 573, the refractive index difference at the interface of the electrode 573 can be suppressed, and the focusing characteristics of light incident on the solid-state imaging element 100h can be improved.

[0181] Note that, although the case where the stopper layer 579 is provided between the insulating film 580 and the electrode 573 has been described here, the present invention is not limited to this. For example, a stopper layer 679 (not shown) may be provided between the insulating film 640 and the electrode 673.

[0182] <<13. Eleventh embodiment>> Furthermore, in the embodiment of the present disclosure, the size of the electrodes 573b, 673b may be reduced. Therefore, as an eleventh embodiment of the present disclosure, a stacked structure of a solid-state imaging element 100i having PDs 500, 600 having electrodes 573b, 673b will be described with reference to Fig. 41. Fig. 41 is a cross-sectional view of a pixel array section 10i according to this embodiment, and in detail, in the pixel array section 10i, solid-state imaging elements 100i including PDs 500, 600 having electrodes 573b, 673b are arranged in a matrix.

[0183] In this embodiment, as shown in FIG. 41, the electrodes 573b and 673b are formed to be smaller than, for example, the electrodes 573 and 673 shown in FIG.

[0184] Here, the layout configuration of the solid-state imaging element 100g according to this embodiment will be described with reference to FIG. 42. FIG. 42 is a cross-sectional view of the solid-state imaging element 100i cut along the line B8-B8' in FIG. 41. Note that FIG. 41 shows a cross section in which one readout electrode 508, 608 is shared by four pixels (four solid-state imaging elements 100i). In this embodiment, as shown in FIG. 42, in a cross section of the solid-state imaging element 100i cut in the stacking direction of the stacked structure, the electrode 673b is formed to have an area smaller than that of the electrode 673 shown in FIG. 36, for example. Note that the shape of the electrode 573b is the same as that of the electrode 673b, and is therefore not shown.

[0185] In this way, by forming the electrodes 573b, 673b small, the area ratio of the stopper layers 577, 677 at the bonding surface JS can be increased, and the performance as a stopper can be improved.

[0186] <<14. Twelfth embodiment>> Furthermore, in the embodiment of the present disclosure, the stopper layer 677 may be provided in the PD 600, and the stopper layer 577 may be omitted. Therefore, as a twelfth embodiment of the present disclosure, a stacked structure of a solid-state imaging device 100j having a PD 600 with a stopper layer 677 will be described with reference to Fig. 43. Fig. 43 is a cross-sectional view of a pixel array section 10j according to this embodiment, and in detail, in the pixel array section 10j, solid-state imaging devices 100j including PDs 600 with stopper layers 677 are arranged in a matrix.

[0187] In this embodiment, as shown in Fig. 43, a stopper layer 677 is formed on a bonding surface JS of PD600. On the other hand, a stopper layer 577 is not formed on a bonding surface JS of PD500. In other words, it can be said that the solid-state imaging element 100j in this embodiment is a solid-state imaging element in which the PD500 in the first embodiment and the PD600 in the ninth embodiment are bonded together.

[0188] In this manner, by bonding the PD 600 on which the stopper layer 677 is formed and the PD 500 on which the stopper layer 577 is not formed at the bonding surface JS, the bonding strength of the solid-state imaging device 100j can be improved.

[0189] In this embodiment, the stopper layer 677 is provided in the PD 600, but this is not limiting. The PD to be provided with the stopper layer may be either the PD 500 or the PD 600. For example, the stopper layer 577 may be provided in the PD 500, and the stopper layer 677 in the PD 600 may be omitted.

[0190] <<15. Thirteenth embodiment>> Furthermore, in the embodiment of the present disclosure, an insulating film 681 may be formed between the stopper layers 577, 677. Therefore, a stacked structure of a solid-state imaging element 100k having an insulating film 681 will be described as a thirteenth embodiment of the present disclosure with reference to Fig. 44. Fig. 44 is a cross-sectional view of a pixel array section 10k according to this embodiment, and in detail, in the pixel array section 10k, solid-state imaging elements 100k having an insulating film 681 are arranged in a matrix.

[0191] In this embodiment, as shown in Fig. 44, an insulating film 681 is formed over the entire bonding surface JS. In this embodiment, the insulating film 681 is formed of a material different from that of the stopper layers 577, 677. In detail, the insulating film 681 is preferably formed using a film formation method that allows easy control of the film thickness, and can be formed of, for example, an ALD oxide film or a TEOS film (i.e., a silicon oxide film using tetraethylorthosilicate as a source gas), etc., and is not particularly limited. When the insulating film 681 is formed of a TEOS film, the insulating film 681 can also serve as an oxygen supply source.

[0192] Here, the layout configuration of the solid-state imaging element 100k according to this embodiment will be described with reference to Fig. 45. Fig. 45 is a cross-sectional view of the solid-state imaging element 100k taken along line B9-B9' in Fig. 44. Fig. 45 shows a cross section in which one read electrode 508, 608 is shared by four pixels (four solid-state imaging elements 100k). In this embodiment, as shown in Fig. 45, an insulating film 681 is formed so as to cover the stopper layer 677 and the electrode 673.

[0193] Thus, in this embodiment, the insulating film 681 is also formed between the electrodes 573, 673, but since it is formed to a thickness that allows the electrodes 573, 673 to be conductive, the electrodes 573, 673 are electrically connected to each other. Here, the electrodes 573, 673 being conductive means that the electrodes 573, 673 are electrically connected to each other, that is, charges can be accumulated from the PD 600 to the floating diffusion section 314. In addition, the thickness that allows the electrodes 573, 673 to be conductive is preferably, for example, about several nm, more specifically, 5 nm or less. By forming the insulating film 681 to be thin, the bonding strength between the stopper layers 577, 677 can be improved while ensuring the conductivity between the electrodes 573, 673. Therefore, as described above, the insulating film 681 is preferably formed using a film formation method that allows easy control of the film thickness.

[0194] In this manner, by forming the insulating film 681 between the stopper layers 577 and 677, the bonding strength of the solid-state imaging element 100j can be improved.

[0195] <<16. Fourteenth embodiment>> In the above-described embodiment of the present disclosure, the solid-state imaging device 1 is miniaturized by stacking a plurality of photoelectric conversion elements 400, 500, and 600 (see, for example, FIG. 13). However, in such a structure, since a plurality of photoelectric conversion elements 400, 500, and 600 are stacked, the solid-state imaging device 1 becomes taller (thicker) in the stacking direction. As a result, in such a structure, it may be difficult for the photoelectric conversion elements 500 and 400 located below to sufficiently capture the light that has passed through the photoelectric conversion element 600 located above. In addition, in such a structure, crosstalk to adjacent solid-state imaging elements (pixels) 100 due to obliquely incident light may easily occur due to the height in the stacking direction.

[0196] Therefore, in the following, as a fourteenth embodiment of the present disclosure, a structure capable of highly efficiently collecting light transmitted through the photoelectric conversion element 600 located above on the photoelectric conversion elements 500 and 400 located below is proposed. In detail, in the present embodiment described below, a light collecting element (specifically, a waveguide, an inner lens, a partition wall, etc.) for collecting light is provided between the multiple photoelectric conversion elements 400, 500, and 600 in the stacking direction. According to this embodiment, by providing such a light collecting element between the multiple photoelectric conversion elements 400, 500, and 600, it becomes possible to collect light with high efficiency on the photoelectric conversion elements 500 and 400 located below. As a result, according to this embodiment, the sensitivity characteristic of the solid-state imaging device 1 can be improved, and further the occurrence of the above-mentioned crosstalk can be suppressed. Hereinafter, the details of this embodiment will be described in order.

[0197] First, one of the structural examples of this embodiment will be described with reference to FIG. 46. FIG. 46 is a cross-sectional view of a pixel array unit 10l according to this embodiment. Specifically, in this embodiment, as shown in FIG. 46, a waveguide 404a is provided as the light collecting element in an insulating film 540 made of SiO2 or the like and capable of transmitting light on an anti-reflection film 402. Furthermore, in this embodiment, a waveguide 404b is also provided as the light collecting element in an insulating film 580 on a photoelectric conversion element 500. That is, in this embodiment, the waveguides 404a and 404b capable of collecting light on the photoelectric conversion elements 500 and 400 located below are provided between the photoelectric conversion elements 400, 500, and 600 in the stacking direction of the solid-state imaging element 100. The waveguides 404a and 404b are preferably formed using, for example, Si3N4 (refractive index: about 1.9). In this case, by forming the insulating films 540 and 580 using SiO2 (refractive index: about 1.4), it becomes possible to focus light on the waveguides 404a and 404b due to the difference in refractive index. In this embodiment, the materials of the waveguides 404a and 404b and the insulating films 540 and 580 are not particularly limited. However, in this embodiment, it is preferable that the difference in refractive index between the material of the waveguides 404a and 404b and the material of the insulating films 540 and 580 is about 0.2 or more, and by doing so, the light focusing efficiency of the waveguides 404a and 404b can be further improved. Furthermore, the structural example shown in FIG. 46 can be formed by various semiconductor process technologies.

[0198] As described above, according to this embodiment, by providing the above-mentioned waveguides 404a, 404b between the multiple photoelectric conversion elements 400, 500, 600, it becomes possible to collect light with high efficiency on the photoelectric conversion elements 500, 400 located below. As a result, according to this embodiment, it is possible to improve the sensitivity characteristics of the solid-state imaging device 1, and further to suppress the occurrence of crosstalk as described above.

[0199] This embodiment may be modified as shown in FIG. 47. Next, with reference to FIG. 47, modified example 1 of the structure example of this embodiment will be described. FIG. 47 is a cross-sectional view of a pixel array section 10m according to modified example 1 of this embodiment. Specifically, in this modified example 1, instead of the above-mentioned waveguides 404a, 404b, inner lenses 406a, 406b capable of converging light on the photoelectric conversion elements 500, 400 located below are provided. The inner lenses 406a, 406b are preferably formed of a material having a higher refractive index than the material of the insulating films 540, 580, which has a refractive index of about 1.4 to 1.6, and more preferably formed of a material having a refractive index of 1.8 or more. Examples of materials for the inner lenses 406a, 406b include coating-type high refractive index materials, such as a material film of a siloxane-based resin containing transparent metal oxide film fine particles such as TiOx and ZnOx, and SiN films, SiON films, TiOx films, and the like formed by a CVD method.

[0200] The structure shown in FIG. 47 can be formed, for example, as follows. A high refractive index layer (not shown) made of a high refractive index material is formed on the anti-reflection film 402, and a resist for forming the inner lenses 406a and 406b is formed on the high refractive index layer. After the resist is formed, a lens pattern is formed by lithography, and a heat treatment (reflow) is performed to form a mound-shaped resist corresponding to the outer shape of the inner lenses 406a and 406b. Then, the entire surface is etched back by dry etching, and the shape of the resist is transferred to the high refractive index layer, thereby forming the inner lenses 406a and 406b. The etching gas used for the above etching can be fluorocarbon gas such as CF4 or C4F8, or O2.

[0201] 47, by providing the inner lenses 406a, 406b between the multiple photoelectric conversion elements 400, 500, 600, it is possible to highly efficiently focus light on the photoelectric conversion elements 500, 400 located below. As a result, according to this modification, it is possible to improve the sensitivity characteristics of the solid-state imaging device 1, and further to suppress the occurrence of crosstalk as described above.

[0202] This embodiment can also be modified as shown in FIG. 48. Next, a modified example 2 of the structure example of this embodiment will be described with reference to FIG. 48. FIG. 48 is a cross-sectional view of a pixel array unit 10n according to the modified example 2 of this embodiment. Specifically, in this modified example 2, partitions 408a, 408b, and 408c are provided instead of the above-mentioned waveguides 404a and 404b. For example, when the insulating films 540, 580, and 640 are formed of SiO2 (refractive index: about 1.4), it is preferable to form the partitions 408a, 408b, and 408c using Si3N4 (refractive index: about 1.9). In this modified example, the material of the partitions 408a, 408b, and 408c is not particularly limited, but it is preferable that the difference in refractive index between the material of the partitions 408a, 408b, and 408c and the material of the insulating films 540, 580, and 640 is about 0.2 or more, and this can further improve the light collection efficiency. Furthermore, the partition walls 408a, 408b, and 408c may be made of a metal material (Al, W, Ti, TiN, TiAl (titanium-aluminum), Cu, Ta (tantalum), TaN, Co, Ru, or a material containing these elements).

[0203] 48, by providing such partitions 408a, 408b, 408c between the multiple photoelectric conversion elements 400, 500, 600, it is possible to highly efficiently focus light on the underlying photoelectric conversion elements 500, 400. As a result, according to this modification, it is possible to improve the sensitivity characteristics of the solid-state imaging device 1 and further to suppress the occurrence of the above-mentioned crosstalk.

[0204] Furthermore, in the present disclosure, it is also possible to appropriately combine and implement the above-described embodiment and modified examples 1 and 2. In addition, in the present embodiment, the positions at which the waveguides 404a and 404b, the inner lenses 406a and 406b, and the partitions 408a, 408b, and 408c are provided are not limited to the above-described positions, and may be provided at other positions, and are not particularly limited.

[0205] <<17. Fifteenth embodiment>> In the above-described embodiment of the present disclosure, a plurality of photoelectric conversion elements 500, 600 are stacked, and a through electrode 560 is provided to electrically connect these photoelectric conversion elements 500, 600. In the above-described embodiment of the present disclosure, for example, one through electrode 560 is shared between these photoelectric conversion elements 500, 600, thereby reducing the processing area and increasing the area of ​​the pixel transistor. However, in the above-described embodiment of the present disclosure, as can be seen from FIG. 13, it is difficult to avoid the size of the read electrode 508 becoming large in order to ensure the electrical connection between the through electrode 560 connected to the photoelectric conversion element 600 and the photoelectric conversion element 500 (specifically, the photoelectric conversion film 504 exposed from the opening). As a result, in the above-described embodiment of the present disclosure, it may be difficult to avoid the size of the incident surface through which light is incident on the photoelectric conversion elements 500, 400 becoming small due to the increase in the size of the read electrode 508.

[0206] Therefore, the following describes a fifteenth embodiment of the present disclosure, which makes it possible to avoid a reduction in the size of the incident surface through which light is incident on the photoelectric conversion element 500, 400. In the embodiment described below, a structure is proposed in which a transparent conductive layer 480 electrically connected to the photoelectric conversion element 500 (specifically, the photoelectric conversion film 504) is provided. Note that, although the transparent conductive layer 480 electrically connected to the photoelectric conversion element 500 is provided here, a structure in which a transparent conductive layer 582 electrically connected to the photoelectric conversion element 600 (specifically, the photoelectric conversion film 604) is provided may also be provided. Note that the transparent conductive layer 582 can have a similar configuration to the transparent conductive layer 480, and therefore a description thereof will be omitted here.

[0207] Furthermore, in this embodiment, a structure is proposed in which the through electrode 560a is electrically connected to the through electrode 460a penetrating the semiconductor substrate 300 through the transparent conductive layer 480 (see FIG. 49). According to this structure, the electrical connection between the photoelectric conversion elements 500 and 600 can be ensured through the through electrode 560a and the transparent conductive layer 480. Furthermore, according to this structure, when the pixel array unit 10o is viewed from above, the through electrode 560a and the through electrode 460a can be arranged at the same position, that is, so that these through electrodes 560a and 460a are overlapped. Therefore, since an opening for exposing the surface of the photoelectric conversion film 504 for ensuring the electrical connection can be eliminated, it is possible to avoid an increase in the size of the read electrode 508 or to make the read electrode 508 itself unnecessary. As a result, according to this embodiment, it is possible to avoid an increase in the size of the read electrode 508 or to make it unnecessary, so that the above-mentioned incident surface can be avoided from being reduced. Hereinafter, the details of this embodiment will be described in order.

[0208] First, one of the structural examples of this embodiment will be described with reference to FIG. 49. FIG. 49 is a cross-sectional view of the pixel array unit 10o according to this embodiment, and for ease of understanding, only the essential parts of this embodiment are shown. In detail, in this embodiment, a transparent conductive layer 480 electrically connected to the photoelectric conversion film 504 is provided below the photoelectric conversion film 504. The transparent conductive layer 480 is electrically connected to the through electrode 460a penetrating the semiconductor substrate 300. Furthermore, the above-mentioned through electrode 560a is electrically connected to the through electrode 460a via the transparent conductive layer 480. In addition, in this embodiment, when the pixel array unit 10o is viewed from above, the through electrode 560a and the through electrode 460a are arranged at the same position, that is, the through electrodes 560a and 460a are arranged so as to overlap each other.

[0209] In this embodiment, the transparent conductive layer 480 can be formed from an oxide semiconductor material such as IGZO (indium-gallium-zinc oxide) and an organic semiconductor material. In addition to IGZO, other oxide semiconductor materials include ZTO (zinc-tin oxide), IGZTO (indium-gallium-zinc-tin oxide), GTO (gallium-tin oxide), and IGO (indium-gallium oxide). In this embodiment, it is preferable to select IGZO from the viewpoint of characteristics and ease of fabrication. It is preferable that the connection region of the transparent conductive layer 480 with the through electrode 560a has low resistance. Therefore, in this embodiment, for example, when an opening is provided in the transparent conductive layer 480 to electrically connect with the through electrode 560a, it is preferable to perform hydrogen plasma treatment on the surface of the transparent conductive layer 480 exposed from the opening after the opening.

[0210] In this embodiment, examples of the metal material used for the through electrode 560a include W, TiN / W, Co, CoWB (cobalt-tungsten-boron), and CoBP (cobalt-boron-phosphorus).

[0211] Next, a layout configuration in the present embodiment in which the through electrodes 460a, 560a are shared by two pixels (solid-state imaging element) 100 (two-pixel sharing) will be described with reference to Fig. 50. Fig. 50 is a cross-sectional view of the solid-state imaging element 100 cut along line EE' in Fig. 49 in the two-pixel sharing case. In detail, as shown in Fig. 50, in this embodiment, a contact region 508b electrically connected to the through electrode 460a via a transparent conductive layer 480 is provided between the two storage electrodes 510.

[0212] Next, with reference to Fig. 51, a layout configuration in the present embodiment in which the through electrodes 460a, 560a are shared by four pixels 100 (four-pixel sharing) will be described. Fig. 51 is a cross-sectional perspective view of the solid-state imaging device 100 cut along the line EE' in Fig. 49 in the four-pixel sharing configuration. In this embodiment, as shown in Fig. 51, a shield pattern 590 is provided so as to surround the storage electrodes 510 of the four pixels 100, and a through electrode 460a extending downward is provided below the center surrounded by the four storage electrodes 510. In this embodiment, the through electrodes 560a and 460a are arranged so as to overlap when the pixel array section 10o is viewed from above.

[0213] Note that the layout configuration shown in Figures 50 and 51 is one example of this embodiment, and for example, in each modified example of this embodiment described later, the layout configuration shown in Figures 50 and 51 can be appropriately modified according to each modified example.

[0214] Next, a method for manufacturing the solid-state imaging element 100 according to this embodiment will be described with reference to Fig. 52 and Fig. 53. Fig. 52 and Fig. 53 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to this embodiment, and these figures show only the main parts of this embodiment.

[0215] First, as shown in FIG. 52(a), an insulating film 540 is deposited on a semiconductor substrate 300 (not shown) on which an anti-reflection film 402 is formed, and a storage electrode 510 is formed on the insulating film 540. Furthermore, after the insulating film 540 is embedded between the storage electrodes 510, the surface is subjected to a CMP method to perform planarization. Next, as shown in FIG. 52(b), a via is formed penetrating the insulating film 540 for the through electrode 460a, and a metal film (e.g., a W film) 250 is deposited so as to embed the via. Then, as shown in FIG. 52(c), planarization is performed by the CMP method up to the surface of the storage electrode 510, and the metal film 250 protruding from the via is removed to form the through electrode 460a.

[0216] Further, an insulating film 540 is deposited on the storage electrode 510, and the deposited insulating film 540 is patterned by photolithography and dry etching to form an opening on the through electrode 460a that exposes the through electrode 460a from the insulating film 540. Then, a transparent conductive layer 480 is deposited so as to fill the opening and cover the insulating film 540. Further, as shown in FIG. 52(d), a photoelectric conversion film 504, a common electrode 502, and an organic film 150 are sequentially deposited on the transparent conductive layer 480.

[0217] Next, as shown in FIG. 53(a), a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480), and an insulating film 580 is deposited to cover the sidewall of the via and the surface of the common electrode 502.

[0218] Then, as shown in Fig. 53(b), the insulating film 580 deposited at the bottom of the via is removed by dry etching, and a metal film (e.g., W film) 252 is deposited so as to fill the via. Furthermore, as shown in Fig. 53(c), the metal film 252 protruding from the via is removed by CMP or dry etching to form a through electrode 560a. Thereafter, an electrode 573 is formed, thereby obtaining a pixel array section 10o as shown in Fig. 49.

[0219] As described above, according to this embodiment, it is possible to avoid an increase in the size of the read electrode 508 or to make the read electrode unnecessary, and therefore it is possible to avoid a reduction in the incidence surface.

[0220] This embodiment may be modified as shown in FIG. 54. Next, a first modification of the structure example of this embodiment will be described with reference to FIG. 54. FIG. 54 is a cross-sectional view of a main part of a pixel array unit 10o according to the first modification of this embodiment. In detail, in this first modification, as shown in FIG. 54, a read electrode 508 is provided, and the through electrode 560a and the through electrode 460a are electrically connected to each other via the read electrode 508 and the transparent conductive layer 480. The structure according to the first modification shown in FIG. 54 can avoid the reduction of the incident surface as in the above-mentioned embodiment, and is also easy to form.

[0221] Next, a method for manufacturing the solid-state imaging element 100 according to the first modified example of this embodiment will be described with reference to Fig. 55 and Fig. 56. Fig. 55 and Fig. 56 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to the first modified example of this embodiment, and these figures show only the main parts of this embodiment.

[0222] First, as in the present embodiment, an insulating film 540 is deposited on a semiconductor substrate 300 (not shown) on which an anti-reflection film 402 is formed, and a storage electrode 510 is formed on the insulating film 540. After the insulating film 540 is deposited, a via is formed for the through electrode 460a, penetrating the insulating film 540, and a metal film is deposited so as to fill the via. Then, as shown in FIG. 55(a), planarization is performed by the CMP method up to the surface of the storage electrode 510, and the metal film protruding from the via is removed to form the through electrode 460a. Next, as shown in FIG. 55(b), a read electrode 508 and a storage electrode 510 are formed, and an insulating film 540 is deposited thereon. Furthermore, as shown in FIG. 55(c), planarization is performed by the CMP method until the surfaces of the read electrode 508 and the storage electrode 510 are exposed.

[0223] Furthermore, an insulating film 540 is deposited on the readout electrode 508 and the storage electrode 510, and an opening is formed in the deposited insulating film 540 so that the surface of the readout electrode 508 on the through electrode 460a is exposed from the insulating film 540. Then, a transparent conductive layer 480 is deposited so as to fill the opening and cover the insulating film 540. Furthermore, as shown in FIG. 55(d), a photoelectric conversion film 504, a common electrode 502, and an organic film 150 are sequentially deposited on the transparent conductive layer 480.

[0224] Next, as shown in FIG. 56(a), a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480), and an insulating film 580 is deposited to cover the sidewall of the via and the surface of the common electrode 502.

[0225] Then, as shown in Fig. 56(b), the insulating film 580 deposited at the bottom of the via is removed, and a metal film 254 is deposited so as to fill the via. Furthermore, as shown in Fig. 56(c), the metal film 254 protruding from the via is removed to form a through electrode 560a. Thereafter, an electrode 573 is formed, thereby obtaining a pixel array section 10o as shown in Fig. 54.

[0226] This embodiment may be modified as shown in FIG. 57. Next, a modified example 2 of the structure example of this embodiment will be described with reference to FIG. 57. FIG. 57 is a cross-sectional view of a main part of a pixel array section 10o according to modified example 2 of this embodiment. In detail, in modified example 2, the through electrode 560a is electrically connected to the transparent conductive layer 480 by contacting the transparent conductive layer 480 not at the bottom surface of the through electrode 560a but at the side surface. The structure according to modified example 2 shown in FIG. 57 can prevent the incidence surface from being reduced, similar to the above-mentioned embodiment.

[0227] Next, a method for manufacturing the solid-state imaging element 100 according to Modification 2 of this embodiment will be described with reference to Figures 58 and 59. Figures 58 and 59 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to Modification 2 of this embodiment, and these figures show only the main parts of this embodiment. Note that the manufacturing method of Modification 2 is common to the description of Figures 55(a) to 55(c) of Modification 1 described above, and therefore the description of the common parts will be omitted.

[0228] 55(a) to 55(c), an insulating film 540, a transparent conductive layer 480, a photoelectric conversion film 504, a common electrode 502, and an organic film 150 are sequentially deposited on a readout electrode 508 and a storage electrode 510 as shown in Fig. 58(a). Next, as shown in Fig. 58(b), a via penetrating the common electrode 502 and the photoelectric conversion film 504 for a through electrode 560a is formed by photolithography and dry etching (specifically, etching to the surface of the transparent conductive layer 480), and an insulating film 580 is deposited so as to cover the sidewall of the via and the surface of the common electrode 502.

[0229] Then, as shown in Fig. 59(a), the insulating film 580 deposited on the readout electrode 508 is removed by dry etching together with a part of the transparent conductive layer 480, and a metal film 256 is deposited so as to fill the via. Furthermore, as shown in Fig. 59(b), the metal film 256 protruding from the via is removed to form a through electrode 560a. Thereafter, an electrode 573 is formed, thereby obtaining a pixel array section 10o as shown in Fig. 57.

[0230] This embodiment may be modified as shown in FIG. 60. Next, a third modification of the structure example of this embodiment will be described with reference to FIG. 60. FIG. 60 is a cross-sectional view of a main part of a pixel array unit 10o according to the third modification of this embodiment. In detail, in this modification, a read electrode 518 made of a metal film having low resistance is provided instead of the read electrode 508. Therefore, the structure according to the third modification shown in FIG. 60 can not only prevent the incidence surface from being reduced as in the above-mentioned embodiment, but also reduce the connection resistance between the through electrode 560a and the through electrode 460a.

[0231] Next, a method for manufacturing the solid-state imaging element 100 according to the third modification of this embodiment will be described with reference to Fig. 61 and Fig. 62. Fig. 61 and Fig. 62 are cross-sectional views for explaining the method for manufacturing the solid-state imaging element 100 according to the third modification of this embodiment, and these figures show only the main parts of this embodiment.

[0232] First, as in the present embodiment, an insulating film 540 is deposited on a semiconductor substrate 300 (not shown) on which an anti-reflection film 402 has been formed, and a part of a storage electrode 510 is formed on the insulating film 540. Furthermore, a via is formed for the through electrode 460a, penetrating the insulating film 540, and a metal film is deposited so as to fill the via, thereby forming the through electrode 460a. Then, as shown in FIG. 61(a), a read electrode 518 made of a metal film is formed on the through electrode 460a by using photolithography and dry etching.

[0233] Next, as shown in Fig. 61(b), an insulating film 540 is deposited, and then a storage electrode 510 is formed, and an insulating film 540 is further deposited thereon. Furthermore, as shown in Fig. 61(c), a CMP method is performed to planarize the surface of the storage electrode 510 until the surface is exposed. Then, as shown in Fig. 61(d), an insulating film 540, a transparent conductive layer 480, a photoelectric conversion film 504, a common electrode 502, and an organic film 150 are sequentially deposited on the storage electrode 510.

[0234] Next, as shown in FIG. 62(a), a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480), and an insulating film 580 is deposited to cover the sidewall of the via and the surface of the common electrode 502.

[0235] Then, as shown in Fig. 62(b), the insulating film 580 deposited at the bottom of the via is removed together with a part of the transparent conductive layer 480, and a metal film 258 is deposited so as to fill the via. Furthermore, as shown in Fig. 62(c), the metal film 258 protruding from the via is removed to form a through electrode 560a. Thereafter, an electrode 573 is formed, thereby obtaining a pixel array section 10o as shown in Fig. 60.

[0236] This embodiment may be modified as shown in FIG. 63. Next, a fourth modification of the structural example of this embodiment will be described with reference to FIG. 63. FIG. 63 is a cross-sectional view of a main part of a pixel array unit 10o according to the fourth modification of this embodiment. In detail, in this modification, the lower end of the through electrode 560a is narrowed, and the lower end is electrically connected to the through electrode 460a via the read electrode 508. The structure according to the fourth modification shown in FIG. 63 can prevent the incidence surface from being reduced, similarly to the above-mentioned embodiment.

[0237] Next, a method for manufacturing the solid-state imaging device 100 according to Modification 4 of this embodiment will be described with reference to Figs. 64 and 65. Figs. 64 and 65 are cross-sectional views for explaining the method for manufacturing the solid-state imaging device 100 according to Modification 4 of this embodiment, and these figures show only the main parts of this embodiment. Note that the manufacturing method of Modification 4 is common to the description of Figs. 55(a) to 55(c) of Modification 1 and the description of Fig. 58(a) of Modification 2 described above, and therefore a description of the common parts will be omitted.

[0238] In this modified example, after the processes shown in Figures 55(a) to 55(c) and the process shown in Figure 58(a), a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (more specifically, etching down to the surface of the transparent conductive layer 480) as shown in Figure 64(a).

[0239] Next, as shown in Fig. 64(b), an organic film 350 is formed on the common electrode 502 to fill the formed vias, and the surface is planarized, and a patterned photoresist 352 is formed on the planarized surface. Furthermore, as shown in Fig. 64(c), a via penetrating the organic film 350, the transparent conductive layer 480, and the insulating film 540 is formed by dry etching according to the patterned photoresist 352.

[0240] Next, as shown in FIG. 64(d), after removing the photoresist 352 and the organic film 350, an insulating film 580 is deposited so as to cover the surface of the readout electrode 508, the sidewall of the via, and the surface of the common electrode 502. Then, as shown in FIG. 65(a), the insulating film 580 deposited on the bottom of the via is removed by dry etching, and a metal film 260 is deposited so as to fill the via. Furthermore, as shown in FIG. 65(b), the metal film 260 protruding from the via is removed to form a through electrode 560a. Thereafter, an electrode 573 is formed, thereby obtaining a pixel array section 10o as shown in FIG. 63.

[0241] This embodiment may be modified as shown in FIG. 66. Next, a fifth modified example of the structure of this embodiment will be described with reference to FIG. 66. FIG. 66 is a cross-sectional view of a main part of a pixel array unit 10o according to the fifth modified example of this embodiment. In detail, in this modified example, the lower end of the through electrode 560a is narrowed, and the lower end is electrically connected to the through electrode 460a via a read electrode 518 made of a low-resistance metal film. The structure according to the fifth modified example shown in FIG. 66 can prevent the incidence surface from being reduced, as in the above-mentioned embodiment.

[0242] Next, a method for manufacturing the solid-state imaging device 100 according to Modification 5 of this embodiment will be described with reference to Fig. 67. Fig. 67 is a cross-sectional view for explaining the method for manufacturing the solid-state imaging device 100 according to Modification 5 of this embodiment, and these figures show only the main parts of this embodiment. Note that the manufacturing method of Modification 5 is common to the description of Modification 3 described above with reference to Figs. 61(a) to 61(d), and therefore the description of the common parts will be omitted.

[0243] In this modification, after the steps shown in Fig. 61(a) to Fig. 61(d) are performed, a via penetrating the common electrode 502 and the photoelectric conversion film 504 for the through electrode 560a is formed by photolithography and dry etching (specifically, etching to the surface of the transparent conductive layer 480). Furthermore, the formed via is filled and an organic film 350 is formed on the common electrode 502, the surface is flattened, and a patterned photoresist 352 is formed on the flattened surface. Then, as shown in Fig. 67(a), a via penetrating the organic film 350, the transparent conductive layer 480, and the insulating film 540 is formed according to the patterned photoresist 352.

[0244] Next, as shown in FIG. 67(b), after removing the photoresist 352 and the organic film 350, an insulating film 580 is deposited so as to cover the surface of the readout electrode 518, the sidewall of the via, and the surface of the common electrode 502. Then, as shown in FIG. 67(c), the insulating film 580 deposited on the bottom of the via is removed by dry etching, and a metal film 262 is deposited so as to fill the via. Furthermore, as shown in FIG. 67(d), the metal film 262 protruding from the via is removed to form a through electrode 560a. Thereafter, an electrode 573 is formed, thereby obtaining a pixel array section 10o as shown in FIG. 66.

[0245] <<18. Application Examples>> FIG. 68 shows an example of a schematic configuration of an imaging system S including a solid-state imaging device (imaging device) 1 according to the above embodiment and its modified example.

[0246] The imaging system S is, for example, an electronic device such as an imaging device such as a digital still camera or a video camera, or a mobile terminal device such as a smartphone or a tablet terminal. The imaging system S includes, for example, the solid-state imaging device 1 according to the above embodiment and its modified example, a DSP circuit 2430, a frame memory 2440, a display unit 2450, a storage unit 2460, an operation unit 2470, and a power supply unit 2480. In the imaging system S, the imaging device 1 according to the above embodiment and its modified example, the DSP circuit 2430, the frame memory 2440, the display unit 2450, the storage unit 2460, the operation unit 2470, and the power supply unit 2480 are connected to each other via a bus line 2490.

[0247] The imaging device 1 according to the above embodiment and its modified examples outputs image data according to incident light. The DSP circuit 2430 is a signal processing circuit that processes a signal (image data) output from the imaging device 1 according to the above embodiment and its modified examples. The frame memory 2440 temporarily holds the image data processed by the DSP circuit 2430 on a frame-by-frame basis. The display unit 2450 is formed of a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays a moving image or a still image captured by the imaging device 1 according to the above embodiment and its modified examples. The storage unit 2460 records image data of a moving image or a still image captured by the imaging device 1 according to the above embodiment and its modified examples in a recording medium such as a semiconductor memory or a hard disk. The operation unit 2470 issues operation commands for various functions of the imaging system S according to an operation by a user. The power supply unit 2480 appropriately supplies various types of power to these targets as operating power for the imaging device 1, DSP circuit 2430, frame memory 2440, display unit 2450, storage unit 2460, and operation unit 2470 according to the above embodiment and its modifications.

[0248] Next, the imaging procedure in the imaging system S will be described.

[0249] 69 shows an example of a flowchart of the imaging operation in the imaging system S. The user issues an instruction to start imaging by operating the operation unit 2470 (step S101). Then, the operation unit 2470 transmits an imaging command to the imaging device 1 (step S102). Upon receiving the imaging command, the imaging device 1 executes imaging in a predetermined imaging method (step S103).

[0250] The imaging device 1 outputs image data obtained by imaging to the DSP circuit 2430. Here, the image data refers to data for all pixels of pixel signals generated based on the charges temporarily stored in the floating diffusion section 314. The DSP circuit 2430 performs predetermined signal processing (e.g., noise reduction processing, etc.) based on the image data input from the imaging device 1 (step S104). The DSP circuit 2430 stores the image data that has been subjected to the predetermined signal processing in the frame memory 2440, and the frame memory 2440 stores the image data in the storage section 2460 (step S105). In this manner, imaging is performed in the imaging system S.

[0251] In this application example, the imaging device 1 according to the above embodiment and its modified example is applied to an imaging system S. The imaging device 1 can efficiently output and transfer pixel signals while suppressing an increase in manufacturing costs, and therefore it is possible to provide an imaging system S that can efficiently output and transfer pixel signals while suppressing an increase in manufacturing costs.

[0252] <<19. Application example to endoscopic surgery system>> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0253] FIG. 70 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0254] 70 shows a state in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0255] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel.

[0256] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an observation target in the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0257] An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from an observation target is collected on the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.

[0258] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0259] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0260] The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 11100 with irradiation light when photographing an operation site or the like.

[0261] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiated light, magnification, focal length, etc.) of the endoscope 11100.

[0262] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing the field of view of the endoscope 11100 and securing the working space of the surgeon. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, image, or graph.

[0263] The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation object with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0264] The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The driving of the image sensor of the camera head 11102 may be controlled in synchronization with the timing of the change in the light intensity to obtain images in a time-division manner, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.

[0265] The light source device 11203 may be configured to supply light of a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band light is irradiated compared to the irradiated light (i.e., white light) during normal observation, and a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast, so-called narrow band imaging is performed. Alternatively, in the special light observation, a fluorescent observation may be performed in which an image is obtained by fluorescence generated by irradiating an excitation light. In the fluorescent observation, it is possible to irradiate an excitation light to a body tissue and observe the fluorescence from the body tissue (autofluorescence observation), or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0266] FIG. 71 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0267] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so as to be able to communicate with each other.

[0268] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

[0269] The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit 11402 is composed of a multi-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining the image signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. Note that when the imaging unit 11402 is composed of a multi-plate type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0270] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately behind the objective lens.

[0271] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be appropriately adjusted.

[0272] The communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0273] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of capturing the image, and / or information specifying the magnification and focus of the captured image.

[0274] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by a user, or may be automatically set by the control unit 11413 of the CCU 11201 based on an acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0275] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.

[0276] The communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0277] Furthermore, the communication unit 11411 transmits, to the camera head 11102, a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0278] The image processing unit 11412 performs various types of image processing on the image signal, which is RAW data sent from the camera head 11102 .

[0279] The control unit 11413 performs various controls related to imaging of the surgical site etc. by the endoscope 11100 and display of the captured image obtained by imaging the surgical site etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0280] Further, the control unit 11413 causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living body parts, bleeding, mist when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edge of an object included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgery support information on the image of the surgical site. By superimposing and presenting the surgery support information to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0281] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0282] Here, in the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0283] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the endoscope 11100, the camera head 11102 (the imaging unit 11402), the CCU 11201 (the image processing unit 11412), and the like, among the above-described configurations.

[0284] Although an endoscopic surgery system has been described as an example here, the technology disclosed herein may also be applied to other systems, such as a microsurgery system.

[0285] <<20. Examples of applications to moving objects>> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, etc.

[0286] FIG. 72 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology of the present disclosure can be applied.

[0287] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 72, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0288] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0289] The body system control unit 12020 controls the operation of various devices equipped on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0290] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0291] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0292] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0293] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0294] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0295] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0296] The audio / video output unit 12052 transmits at least one output signal of audio and image to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 72, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0297] FIG. 73 is a diagram showing an example of the installation position of the imaging unit 12031.

[0298] In FIG. 73, a vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as an imaging unit 12031.

[0299] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0300] 73 shows an example of the imaging ranges of the imaging units 12101 to 12104. An imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and an imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0301] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0302] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0303] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0304] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0305] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 and the like among the above-described configurations.

[0306] <<21. Summary>> As described above, according to each embodiment of the present disclosure, it is possible to provide a solid-state imaging device 100 and an electronic device that are capable of efficiently outputting and transferring pixel signals while avoiding an increase in manufacturing costs.

[0307] In the above-mentioned embodiments of the present disclosure, the solid-state imaging device 100 is described in which the first conductivity type is P type, the second conductivity type is N type, and electrons are used as signal charges, but the embodiments of the present disclosure are not limited to such examples. For example, each embodiment can be applied to a solid-state imaging device 100 in which the first conductivity type is N type, the second conductivity type is P type, and holes are used as signal charges.

[0308] In each of the above-described embodiments of the present disclosure, the semiconductor substrate 300 does not necessarily have to be a silicon substrate, and may be another substrate (for example, an SOI (Silicon On Insulator) substrate, a SiGe substrate, etc.). The semiconductor substrate 300 may be such a substrate on which a semiconductor structure or the like is formed.

[0309] Furthermore, the solid-state imaging element 100 according to each embodiment of the present disclosure is not limited to a solid-state imaging element that detects the distribution of the amount of incident visible light and captures it as an image. For example, this embodiment can be applied to a solid-state imaging element that captures the distribution of the amount of incident infrared rays, X-rays, particles, etc. as an image, or a solid-state imaging element (physical quantity distribution detection device) such as a fingerprint detection sensor that detects the distribution of other physical quantities such as pressure and capacitance and captures them as an image.

[0310] Moreover, the solid-state imaging element 100 according to each embodiment of the present disclosure can be manufactured by using a method, an apparatus, and conditions used in the manufacture of a general semiconductor device. That is, the solid-state imaging element 100 according to each embodiment can be manufactured by using an existing manufacturing process for a semiconductor device.

[0311] Examples of the above-mentioned methods include PVD, CVD, and ALD. Examples of the PVD methods include vacuum deposition, EB (electron beam) deposition, various sputtering methods (magnetron sputtering, RF-DC combined bias sputtering, ECR (Electron Cyclotron Resonance) sputtering, facing target sputtering, high frequency sputtering, etc.), ion plating, laser ablation, molecular beam epitaxy (MBE), and laser transfer. Examples of the CVD methods include plasma CVD, thermal CVD, metal organic (MO) CVD, and photo CVD. Further, other methods include electrolytic plating, electroless plating, spin coating, immersion, casting, microcontact printing, drop casting, various printing methods such as screen printing, inkjet printing, offset printing, gravure printing, and flexographic printing, stamping, spraying, and various coating methods such as air doctor coater, blade coater, rod coater, knife coater, squeeze coater, reverse roll coater, transfer roll coater, gravure coater, kiss coater, cast coater, spray coater, slit orifice coater, and calendar coater. Further, patterning methods include chemical etching such as shadow mask, laser transfer, and photolithography, and physical etching using ultraviolet light, laser, and the like. In addition, planarization techniques include CMP, laser planarization, and reflow.

[0312] <<22. Supplementary Information>> Although the preferred embodiment of the present disclosure has been described in detail above with reference to the attached drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person having ordinary knowledge in the technical field of the present disclosure can conceive of various modified or amended examples within the scope of the technical ideas described in the claims, and it is understood that these also naturally belong to the technical scope of the present disclosure.

[0313] In addition, the effects described in this specification are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to a person skilled in the art from the description of this specification, in addition to or in place of the above effects.

[0314] Note that the following configurations also fall within the technical scope of the present disclosure. (1) A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; Equipped with the first and second photoelectric conversion units are bonded to each other at bonding surfaces facing each other, Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; the upper electrode, and a storage electrode opposed to the photoelectric conversion film and the insulating film therebetween; The laminate structure includes The lower electrode of the first photoelectric conversion unit is a first through electrode penetrating the semiconductor substrate, the first through electrode being electrically connected to a charge storage unit provided in the semiconductor substrate; The lower electrode of the second photoelectric conversion unit is a second electrode provided on a junction surface of the second photoelectric conversion unit; a first electrode provided on a junction surface of the first photoelectric conversion unit; a second through electrode penetrating the first photoelectric conversion unit; The first through electrode; is electrically connected to the charge storage unit via Solid-state imaging element. (2) The first and second electrodes are formed of a transparent conductive material. A solid-state imaging element according to (1). (3) the first and second electrodes are substantially circular in a cross section obtained by cutting the solid-state imaging element in a stacking direction of the stacked structure; A solid-state imaging element according to (1) or (2). (4) The first and second photoelectric conversion units each have at least one dummy electrode on the bonding surface. The solid-state imaging device according to any one of (1) to (3). (5) The first and second electrodes have at least one opening formed therein. The solid-state imaging device according to any one of (1) to (4). (6) The first and second electrodes are different in size. The solid-state imaging device according to any one of (1) to (5). (7) a stopper layer made of a hard insulating material is provided on at least one of the junction surfaces of the first and second photoelectric conversion units, the stopper layer surrounding the first electrode or the second electrode; The solid-state imaging device according to any one of (1) to (6). (8) a first wiring layer is provided between the first electrode and the upper electrode of the first photoelectric conversion unit; a stopper layer made of a hard insulating material is provided between the first electrode and the first wiring layer; A solid-state imaging element according to (7). (9) the first electrode, the stopper layer, and the first wiring layer have decreasing refractive indices in that order; A solid-state imaging device according to (8). (10) a second wiring layer is provided between the second electrode and the upper electrode of the second photoelectric conversion unit; a stopper layer made of a hard insulating material is provided between the second electrode and the second wiring layer; A solid-state imaging element according to (7). (11) the second electrode, the stopper layer, and the second wiring layer have decreasing refractive indices in that order; The solid-state imaging element according to (10). (12) a stopper layer made of a hard insulating material and provided on the junction surfaces of the first and second photoelectric conversion units so as to surround the first electrode or the second electrode; an insulating film provided to cover the stopper layer and the first and second electrodes and made of a material different from that of the stopper layer; Further equipped with the first and second electrodes are electrically connected via the insulating film; The solid-state imaging device according to any one of (1) to (6). (13) The insulating film has a thickness that allows the first and second electrodes to be electrically connected to each other. The solid-state imaging element according to (12). (14) the first through electrode is a common through electrode provided in common to the first and second photoelectric conversion units, The charge accumulation unit is a common charge accumulation unit provided in common to the first and second photoelectric conversion units. The solid-state imaging device according to any one of (1) to (13). (15) A solid-state imaging element as described in (14), wherein each of the lower electrodes of the first and second photoelectric conversion units is electrically connected to a common pixel transistor provided in common to the first and second photoelectric conversion units within the semiconductor substrate via the common through electrode. (16) The solid-state imaging device according to any one of (1) to (15), wherein the photoelectric conversion film is made of an organic material. (17) The solid-state imaging device according to any one of (1) to (16), further comprising a third photoelectric conversion unit provided in the semiconductor substrate, the third photoelectric conversion unit converting the light into electric charges. (18) A solid-state imaging element; an optical system that forms an image of incident light on a light receiving surface of the solid-state imaging device; A processor for controlling the solid-state imaging device; Equipped with The solid-state imaging device includes: A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; Equipped with the first and second photoelectric conversion units are bonded to each other at bonding surfaces facing each other, Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; the upper electrode, and a storage electrode opposed to the photoelectric conversion film and the insulating film therebetween; The laminate structure includes The lower electrode of the first photoelectric conversion unit is a first through electrode penetrating the semiconductor substrate, the first through electrode being electrically connected to a charge storage unit provided in the semiconductor substrate; The lower electrode of the second photoelectric conversion unit is a second electrode provided on a junction surface of the second photoelectric conversion unit; a first electrode provided on a junction surface of the first photoelectric conversion unit; a second through electrode penetrating the first photoelectric conversion unit; The first through electrode; is electrically connected to the charge storage unit via electronic equipment. [Explanation of symbols]

[0315] 1. Solid-state imaging device 10, 80 Pixel array section 32 Vertical drive circuit section 34 Column signal processing circuit section 36 Horizontal drive circuit section 38 Output circuit section 40 Control circuit section 42 Pixel drive wiring 44 Vertical signal line 46 Horizontal signal line 48 Input / output terminal 100, 800 solid-state image sensor 150, 350 organic film 200, 520, 620, 720 wiring layers 230, 530, 570, 572, 670, 672, 730, 770, 772 Wiring 232, 573, 673, 674 electrode 240 Interlayer insulating film 250, 252, 254, 256, 258, 260, 262 Metal film 300 Semiconductor Substrate 310, 312, 410 Semiconductor area 314, 814 Floating diffusion section 342 Isolation insulating film 352 Photoresist 400, 500, 600, 700, 802, 804, 806 Photoelectric conversion element 402 Anti-reflection coating 404a, 404b waveguide 406a, 406b Inner lens 408a, 408b bulkhead 480, 578, 676 Transparent conductive layer 450, 462, 506, 540, 562, 580, 606, 640, 662, 681, 706, 780 Insulating film 460, 460a, 560, 560a, 630, 660, 807, 860 Through electrode 502, 602, 702 common electrode 504, 604, 704 Photoelectric conversion film 508, 518, 608, 708 Readout electrode 508b Contact area 512, 612 Transfer electrode 514, 614 Shield electrode 510, 610, 710 storage electrode 590 Shield Pattern 575, 675 Dummy electrode 577, 579, 677 Stopper layer

Claims

1. A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; Equipped with the first and second photoelectric conversion units are bonded to each other at bonding surfaces facing each other, Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; the upper electrode, and a storage electrode opposed to the photoelectric conversion film and the insulating film therebetween; The laminate structure includes The lower electrode of the first photoelectric conversion unit is a first through electrode penetrating the semiconductor substrate, the first through electrode being electrically connected to a charge storage unit provided in the semiconductor substrate; The lower electrode of the second photoelectric conversion unit is a second electrode provided on a junction surface of the second photoelectric conversion unit; a first electrode provided on a bonding surface of the first photoelectric conversion unit so as to face the second electrode and bonded to the second electrode; A second through electrode penetrating the first photoelectric conversion unit; The first through electrode; is electrically connected to the charge storage unit via Solid-state imaging element.

2. the first and second electrodes are formed of a transparent conductive material; The solid-state imaging device according to claim 1 .

3. the first and second electrodes are substantially circular in a cross section obtained by cutting the solid-state imaging element in a stacking direction of the stacked structure; The solid-state imaging device according to claim 2 .

4. the first and second photoelectric conversion units each have at least one dummy electrode on the bonding surface; The solid-state imaging device according to claim 2 .

5. The first and second electrodes have at least one opening formed therein. The solid-state imaging device according to claim 2 .

6. The first and second electrodes are different in size. The solid-state imaging device according to claim 2 .

7. a stopper layer made of a hard insulating material is provided on at least one of the junction surfaces of the first and second photoelectric conversion units, the stopper layer surrounding the first electrode or the second electrode; The solid-state imaging device according to claim 2 .

8. a first wiring layer is provided between the first electrode and the upper electrode of the first photoelectric conversion unit; the stopper layer made of a hard insulating material is provided between the first electrode and the first wiring layer; The solid-state imaging device according to claim 7 .

9. the first electrode, the stopper layer, and the first wiring layer have decreasing refractive indices in this order; The solid-state imaging device according to claim 8 .

10. a second wiring layer is provided between the second electrode and the upper electrode of the second photoelectric conversion unit; the stopper layer made of a hard insulating material is provided between the second electrode and the second wiring layer; The solid-state imaging device according to claim 7 .

11. the second electrode, the stopper layer, and the second wiring layer have decreasing refractive indices in this order; The solid-state imaging device according to claim 10.

12. a stopper layer made of a hard insulating material and provided on the junction surfaces of the first and second photoelectric conversion units so as to surround the first electrode or the second electrode; an insulating film provided to cover the stopper layer and the first and second electrodes and made of a material different from that of the stopper layer; Further equipped with the first and second electrodes are electrically connected via the insulating film; The solid-state imaging device according to claim 2 .

13. the insulating film has a thickness that allows the first and second electrodes to be electrically connected to each other; The solid-state imaging device according to claim 12.

14. the first through electrode is a common through electrode provided in common to the first and second photoelectric conversion units, The charge accumulation unit is a common charge accumulation unit provided in common to the first and second photoelectric conversion units. The solid-state imaging device according to claim 1 .

15. 15. The solid-state imaging element of claim 14, wherein each of the lower electrodes of the first and second photoelectric conversion units is electrically connected to a common pixel transistor provided in common to the first and second photoelectric conversion units within the semiconductor substrate via the common through electrode.

16. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion film is made of an organic material.

17. The solid-state imaging device according to claim 1 , further comprising a third photoelectric conversion portion provided in the semiconductor substrate for converting the light into electric charges.

18. A solid-state imaging element; an optical system that forms an image of incident light on a light receiving surface of the solid-state imaging device; A processor for controlling the solid-state imaging device; Equipped with The solid-state imaging device includes: A semiconductor substrate; a first photoelectric conversion unit provided above the semiconductor substrate and configured to convert light into electric charges; A second photoelectric conversion unit that is provided above the first photoelectric conversion unit and converts light into electric charges; Equipped with the first and second photoelectric conversion units are bonded to each other at bonding surfaces facing each other, Each of the first and second photoelectric conversion units is An upper electrode; A lower electrode; a photoelectric conversion film sandwiched between the upper electrode and the lower electrode; the upper electrode, and a storage electrode opposed to the photoelectric conversion film and the insulating film therebetween; The laminate structure includes The lower electrode of the first photoelectric conversion unit is a first through electrode penetrating the semiconductor substrate, the first through electrode being electrically connected to a charge storage unit provided in the semiconductor substrate; The lower electrode of the second photoelectric conversion unit is a second electrode provided on a junction surface of the second photoelectric conversion unit; a first electrode provided on a bonding surface of the first photoelectric conversion unit so as to face the second electrode and bonded to the second electrode; A second through electrode penetrating the first photoelectric conversion unit; The first through electrode; is electrically connected to the charge storage unit via electronic equipment.

Images