Imaging device and electronic device

Abstract

Provided is an imaging device having excellent phase difference detection characteristics. The imaging device is provided with a plurality of image plane phase difference detecting pixels each of which comprises: a semiconductor layer; a photoelectric converting portion; a charge holding portion; a first light-blocking film; and a second light-blocking film. The semiconductor layer has a front surface and a back surface on the opposite side to the front surface. The photoelectric converting portion is disposed in the semiconductor layer and is capable of generating charges corresponding to a received amount of light by photoelectric conversion. The charge holding portion is disposed between the front surface and the photoelectric converting portion in the semiconductor layer and is capable of holding charges. The first light-blocking film is positioned between the photoelectric converting portion and the charge holding portion, and has an opening through which charges can pass. The second light-blocking film, when viewed from the photoelectric converting portion, is positioned on the opposite side to the first light-blocking film. Herein, the second light-blocking film of each of the plurality of image plane phase difference detecting pixels is disposed in a first region including an overlap region overlapping the opening in a pixel region occupied by the photoelectric converting portion, or is disposed in a second region of the pixel region other than the first region.

Description

[Technical field]

[0001] The present disclosure relates to an imaging device having an image surface phase difference detection pixel, and an electronic device including the imaging device. [Background technology]

[0002] Up to now, imaging devices have been proposed that include image plane phase difference detection pixels for obtaining a phase difference signal for autofocus, in addition to normal pixels for obtaining an image signal (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2016 / 129406 Summary of the Invention

[0004] Incidentally, in such an imaging device, it is desirable that there be little variation in detection sensitivity in the phase difference pixels.

[0005] It is therefore desirable to provide an imaging device with excellent phase difference detection characteristics, and an electronic device equipped with such an imaging device.

[0006] An imaging device according to an embodiment of the present disclosure includes a plurality of image surface phase difference detection pixels each having a semiconductor layer, a photoelectric conversion unit, a charge holding unit, a first light-shielding film, and a second light-shielding film. The semiconductor layer includes a front surface and a back surface opposite to the front surface. The photoelectric conversion unit is provided in the semiconductor layer and is capable of generating charges according to the amount of received light by photoelectric conversion. The charge holding unit is provided between the front surface of the semiconductor layer and the photoelectric conversion unit and is capable of holding charges. The first light-shielding film is located between the photoelectric conversion unit and the charge holding unit and includes an opening through which charges can pass. The second light-shielding film is located on the opposite side of the first light-shielding film as viewed from the photoelectric conversion unit. Here, each of the second light-shielding films in the plurality of image surface phase difference detection pixels is provided in a first region including an overlapping region overlapping with the opening in a pixel region occupied by the photoelectric conversion unit, or each is provided in a second region other than the first region in the pixel region. Moreover, an electronic device according to an embodiment of the present disclosure includes the imaging device described above.

[0007] In an imaging device and an electronic device according to an embodiment of the present disclosure, the second light-shielding film in each of the plurality of image surface phase difference detection pixels is provided only in the first region or only in the second region, which reduces the variation in detection sensitivity in the plurality of image surface phase difference detection pixels compared to a case in which the image surface phase difference detection pixels in which the second light-shielding film exists in the first region and the image surface phase difference detection pixels in which the second light-shielding film exists in the second region are mixed. [Brief description of the drawings]

[0008] [Figure 1A] 1 is a block diagram illustrating an example of a configuration of an imaging device according to a first embodiment of the present disclosure. [Figure 1B] FIG. 2 is a block diagram showing an example of the configuration of an imaging device as a first modified example of the first embodiment. [Figure 1C] FIG. 13 is a block diagram showing an example of the configuration of an imaging device as a second modified example of the first embodiment. [Diagram 2] 1B is a circuit diagram illustrating a circuit configuration of one sensor pixel in the imaging device illustrated in FIG. 1A. [Diagram 3]1B is a plan view illustrating an example of an arrangement of sensor pixels in the pixel array portion illustrated in FIG. 1A. [Figure 4] 4 is a cross-sectional view illustrating a schematic configuration of a sensor pixel illustrated in FIG. [Diagram 5] 4 is an explanatory diagram illustrating the phase difference signal detection sensitivity in the first image surface phase difference detection pixel shown in FIG. 3. [Figure 6] 4 is an explanatory diagram illustrating the phase difference signal detection sensitivity in the second image surface phase difference detection pixel shown in FIG. 3. [Figure 7] 11 is an explanatory diagram illustrating the phase difference signal detection sensitivity in a second image surface phase difference detection pixel as a reference example. FIG. [Figure 8] FIG. 13 is a schematic plan view illustrating an arrangement of sensor pixels in a pixel array portion according to a third modified example of the first embodiment. [Figure 9] FIG. 13 is a schematic plan view illustrating an arrangement of sensor pixels in a pixel array portion according to a fourth modified example of the first embodiment. [Figure 10] FIG. 11 is a plan view illustrating an example of an arrangement of sensor pixels in a pixel array unit according to a second embodiment of the present disclosure. [Figure 11] FIG. 13 is a cross-sectional view illustrating a schematic configuration of a sensor pixel in a pixel array portion according to a third embodiment of the present disclosure. [Figure 12] FIG. 1 is a schematic diagram illustrating an example of an overall configuration of an electronic device. [Figure 13] 1 is a block diagram showing an example of a schematic configuration of a vehicle control system; [Figure 14] 4 is an explanatory diagram showing an example of the installation positions of an outside-vehicle information detection unit and an imaging unit; FIG. [Figure 15] FIG. 13 is a plan view illustrating an example of an arrangement of sensor pixels in a pixel array portion according to another modified example of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 1. First embodiment 13 is an example of an imaging device equipped with an image surface phase difference detection pixel having a second light-shielding film provided in a first region including an overlapping region with an opening of a first light-shielding film. 2. Modification of the First Embodiment 3. Second embodiment 13 is an example of an imaging device including an image surface phase difference detection pixel having a second light-shielding film provided in a second region that does not include an overlapping region with an opening of the first light-shielding film. 4. Third embodiment 13 is an example of an imaging device further comprising a third light-shielding film. 5. Application examples to electronic devices 6. Application examples for moving objects 7. Other Modifications

[0010] <1. First embodiment> [Configuration of solid-state imaging device 101] FIG. 1A is a block diagram showing an example of the configuration of a solid-state imaging device 101 according to a first embodiment of the present technology.

[0011] The solid-state imaging device 101 is a so-called global shutter type back-illuminated image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The solid-state imaging device 101 captures an image by receiving light from a subject, photoelectrically converting the light, and generating an image signal.

[0012] The global shutter method is a method of performing global exposure in which exposure is basically started and ended simultaneously for all pixels. Here, all pixels means all pixels that appear in an image, excluding dummy pixels and the like. In addition, if the time difference and image distortion are small enough to be negligible, the global shutter method also includes a method of performing global exposure in units of multiple rows (e.g., several tens of rows) instead of all pixels simultaneously, while moving the area where global exposure is performed. In addition, the global shutter method also includes a method of performing global exposure on pixels in a specified area, rather than on all pixels that appear in an image.

[0013] A back-illuminated image sensor is an image sensor in which a photoelectric conversion unit such as a photodiode that receives light from a subject and converts it into an electrical signal is provided between a light-receiving surface where the light from the subject is incident and a wiring layer on which wiring such as transistors that drive each pixel is provided.

[0014] The solid-state imaging device 101 includes, for example, a pixel array section 111, a vertical driving section 112, a column signal processing section 113, a data storage section 119, a horizontal driving section 114, a system control section 115, and a signal processing section 118.

[0015] In the solid-state imaging device 101, a pixel array section 111 is formed on a semiconductor substrate 11 (described later). Peripheral circuits such as a vertical driving section 112, a column signal processing section 113, a data storage section 119, a horizontal driving section 114, a system control section 115, and a signal processing section 118 are formed on the same semiconductor substrate 11 as the pixel array section 111, for example.

[0016] The pixel array section 111 has a plurality of sensor pixels 110, each including a photoelectric conversion section 51 (described later) that generates and accumulates an electric charge according to the amount of light incident from a subject. The sensor pixels 110 are arranged in a horizontal direction (row direction) and a vertical direction (column direction) as shown in Fig. 1. In the pixel array section 111, a pixel drive line 116 is wired along the row direction for each pixel row made up of the sensor pixels 110 arranged in a row direction, and a vertical signal line (VSL) 117 is wired along the column direction for each pixel column made up of the sensor pixels 110 arranged in a column direction.

[0017] The vertical driving unit 112 includes a shift register, an address decoder, etc. The vertical driving unit 112 supplies signals and the like to the plurality of sensor pixels 110 via the plurality of pixel driving lines 116, thereby driving all of the plurality of sensor pixels 110 in the pixel array unit 111 simultaneously or driving them on a pixel row basis.

[0018] The vertical drive unit 112 has two scanning systems, for example, a readout scanning system and a sweep-out scanning system. The readout scanning system sequentially selects and scans the unit pixels of the pixel array unit 111 row by row in order to read out signals from the unit pixels. The sweep-out scanning system performs sweep-out scanning on the readout row to be read out scanned by the readout scanning system, prior to the readout scanning by the shutter speed.

[0019] The sweep-out scanning by this sweep-out scanning system sweeps out unnecessary charges from the photoelectric conversion unit 51 of the unit pixel of the readout row. This is called resetting. The sweep-out of unnecessary charges by this sweep-out scanning system, i.e., resetting, performs a so-called electronic shutter operation. Here, the electronic shutter operation refers to the operation of discarding the photoelectric charge of the photoelectric conversion unit 51 and starting a new exposure, i.e., starting a new accumulation of photoelectric charge.

[0020] The signal read by the readout operation by the readout scanning system corresponds to the amount of light that has entered since the immediately preceding readout operation or electronic shutter operation. The period from the readout timing of the immediately preceding readout operation or the sweep timing of the electronic shutter operation to the readout timing of the current readout operation is the accumulation time of the photocharge in the unit pixel, i.e., the exposure time.

[0021] Signals output from each unit pixel in a pixel row selected and scanned by the vertical drive section 112 are supplied to a column signal processing section 113 through each vertical signal line 117. The column signal processing section 113 performs predetermined signal processing on signals output from each unit pixel in a selected row through the vertical signal line 117 for each pixel column in the pixel array section 111, and temporarily holds the pixel signals after signal processing.

[0022] Specifically, the column signal processing unit 113 is composed of, for example, a shift register and an address decoder, and performs noise removal processing, correlated double sampling processing, A / D (Analog / Digital) conversion of analog pixel signals, etc. to generate digital pixel signals. The column signal processing unit 113 supplies the generated pixel signals to the signal processing unit 118.

[0023] The horizontal driving unit 114 is composed of a shift register, an address decoder, etc., and is configured to sequentially select unit circuits corresponding to pixel columns of the column signal processing unit 113. By selective scanning by this horizontal driving unit 114, pixel signals that have been signal-processed for each unit circuit in the column signal processing unit 113 are output to the signal processing unit 118 in sequence.

[0024] The system control unit 115 is composed of a timing generator that generates various timing signals, etc. The system control unit 115 controls the driving of the vertical driving unit 112, the column signal processing unit 113, and the horizontal driving unit 114 based on the timing signals generated by the timing generator.

[0025] The signal processing unit 118 performs signal processing such as arithmetic processing on the pixel signals supplied from the column signal processing unit 113 while temporarily storing the data in a data storage unit 119 as necessary, and outputs an image signal consisting of each pixel signal.

[0026] The data storage unit 119 temporarily stores data necessary for the signal processing performed by the signal processing unit 118 .

[0027] Note that the solid-state imaging device of the present technology is not limited to the solid-state imaging device 101 shown in FIG. 1A, and may have a configuration such as the solid-state imaging device 101A shown in FIG. 1B or the solid-state imaging device 101B shown in FIG. 1C. FIG. 1B is a block diagram showing an example of a functional configuration of the solid-state imaging device 101A as a first modified example according to the first embodiment of the present technology. FIG. 1C is a block diagram showing an example of a functional configuration of the solid-state imaging device 101B as a second modified example according to the first embodiment of the present technology.

[0028] In the solid-state imaging device 101A of FIG. 1B, a data storage unit 119 is disposed between the column signal processing unit 113 and the horizontal driving unit 114, and the pixel signal output from the column signal processing unit 113 is supplied to the signal processing unit 118 via the data storage unit 119.

[0029] 1C is configured such that a data storage unit 119 and a signal processing unit 118 are arranged in parallel between the column signal processing unit 113 and the horizontal driving unit 114. In the solid-state imaging device 101C, the column signal processing unit 113 performs A / D conversion for converting analog pixel signals into digital pixel signals for each column of the pixel array unit 111 or for each set of multiple columns of the pixel array unit 111.

[0030] [Configuration of sensor pixel 110] (Circuit configuration example) Next, a circuit configuration example of the sensor pixel 110 provided in the pixel array unit 111 of Fig. 1A will be described with reference to Fig. 2. Fig. 2 shows a circuit configuration example of one of the sensor pixels 110 constituting the pixel array unit 111.

[0031] In the example shown in FIG. 2, the sensor pixel 110 in the pixel array unit 111 realizes a memory-holding type global shutter.

[0032] The sensor pixel 110 includes power supplies VDD1 and VDD2, a photoelectric conversion unit (PD) 51, first to third transfer transistors (TR) 52A to 52C, a charge-voltage conversion unit (FD) 53, a reset transistor (RST) 54, an amplification transistor (AMP) 55, a selection transistor (SEL) 56, a discharge transistor (OFG) 58, a charge holding unit (MEM) 59, a discharge unit OFD, and a buffer BUF. TR52A includes a transfer gate TRZ, TR52B includes a transfer gate TRY and a transfer gate TRX, and TR52C includes a transfer gate TRG.

[0033] In this example, TR52A to TR52C, RST54, AMP55, SEL56 and OFG58 are all N-type MOS transistors. Drive signals are supplied to the gate electrodes of TG52A to TR52C, RST54, AMP55, SEL56 and OFG58 by the vertical drive unit 112 and the horizontal drive unit 114 under the drive control of the system control unit 115. The drive signals are pulse signals in which a high level state is an active state (on state) and a low level state is an inactive state (off state). In the following, making a drive signal active is also referred to as turning on the drive signal, and making a drive signal inactive is also referred to as turning off the drive signal.

[0034] The PD 51 is a photoelectric conversion element formed of, for example, a PN junction photodiode, and is configured to receive light from a subject, generate electric charges according to the amount of received light through photoelectric conversion, and accumulate the electric charges.

[0035] The MEM 59 is provided between the PD 51 and the FD 53, and is an area that temporarily holds the electric charge generated and accumulated in the PD 51 until the electric charge is transferred to the FD 53 in order to realize a global shutter function.

[0036] TG52A to TG52C are disposed between PD51 and FD53. TR52A is configured to transfer the charge accumulated in PD51 to MEM59 in response to a drive signal applied to a transfer gate TRZ. TR52A is a specific example corresponding to a "charge transfer unit" of the present disclosure.

[0037] TR52B and TR52C are configured to transfer the charge temporarily held in MEM59 to FD53 in response to drive signals applied to transfer gates TRY, TRX and transfer gate TRG, respectively.

[0038] In the sensor pixel 110, for example, when TR52A is turned off and TR52B and TR52C are turned on, the charge held in the MEM59 is transferred to the FD53.

[0039] The buffer BUF is a charge storage region formed between TR52A and TR52B.

[0040] The RST54 has a drain connected to the power supply VDD1 and a source connected to the FD53. The RST54 initializes, i.e. resets, the FD53 in response to a drive signal applied to its gate electrode. For example, when the RST54 is turned on by the drive signal, the potential of the FD53 is reset to the voltage level of the power supply VDD1. That is, the FD53 is initialized.

[0041] The FD53 is a floating diffusion region that converts the charge transferred from the PD51 via the TR52A to TR52C and the MEM59 into an electric signal (for example, a voltage signal) and outputs the electric signal. The FD53 is connected to the RST54, and is also connected to the VSL117 via the amplifying transistors AMP55 and SEL56.

[0042] The AMP55 outputs an electrical signal according to the potential of the FD53. The AMP55 constitutes, for example, a source follower circuit together with a constant current source provided in the column signal processing unit 113. The SEL56 is turned on when the sensor pixel 110 is selected, and outputs an electrical signal from the FD53 via the AMP55 to the column signal processing unit 113 via the VSL117.

[0043] Each of the sensor pixels 110 further includes a drain unit OFD in addition to the FD 53 as a transfer destination of the charge of the PD 51. The OFG 58 is disposed between the TR 52A and the TR 52B.

[0044] OFG58 has a drain connected to the discharge unit OFD and a source connected to the wiring connecting TR52A and TR52B. OFG58 initializes, that is, resets, PD51 in response to a drive signal applied to the gate electrode. Resetting PD51 means depleting PD51.

[0045] Further, the OFG 58 forms an overflow path and discharges the charge overflowing from the PD 51 to the discharge unit OFD. In this manner, in the sensor pixel 110 of the present embodiment, the OFG 58 can directly reset the PD 51.

[0046] (Examples of plan and cross-sectional configurations) Next, a planar configuration example and a cross-sectional configuration example of the sensor pixel 110 provided in the pixel array section 111 of Fig. 1A will be described with reference to Fig. 3 and Fig. 4. Fig. 3 shows a planar configuration example of some (16 in the example of Fig. 3) of the sensor pixels 110 constituting the pixel array section 111. Fig. 4 shows a cross-sectional configuration example of the sensor pixels 110 constituting the pixel array section 111, as viewed in the direction of the arrows along line IV-IV shown in Fig. 3.

[0047] In Fig. 3, each of 16 square regions divided by solid lines represents a pixel region 120 in one sensor pixel 110. A rectangular opening 14K (described later) depicted by a dashed line is provided in each pixel region 120. Furthermore, as shown in Fig. 3, the sensor pixel 110 includes several first and second image plane phase difference detection pixels ZAF1 and ZAF2 for obtaining a phase difference signal for autofocus, in addition to image detection pixels 110R, 110G, and 110B for normal image detection.

[0048] 3 represent a red color filter CF (described later), a green color filter CF, and a blue color filter CF, respectively. The image detection pixel 110R has a color filter CF-R and detects red light from the incident light. The image detection pixel 110G has a color filter CF-G and detects green light from the incident light. The image detection pixel 110B has a color filter CF-B and detects blue light from the incident light.

[0049] As shown in FIG. 4, the image detection pixel 110B has a stacked structure in which a first level LY1 including the PD 51 and the like and a second level LY2 including the MEM 59 and the like are stacked in the Z-axis direction.

[0050] The image detection pixel 110B has a semiconductor substrate 11 formed of a semiconductor material such as Si (silicon) and a PD51 embedded in the semiconductor substrate 11 in a first layer LY1. The PD51 is formed so as to occupy most of the pixel region of the image detection pixel 110B in the XY plane. As shown in FIG. 4, the semiconductor substrate 11 includes a front surface 11S1 and a back surface 11S2 on the opposite side to the front surface 11S1 in the Z-axis direction. The back surface 11S2 is a surface on which light from the outside is incident, and a color filter formation layer LY0 including a color filter CF is provided. An on-chip lens LNS is further provided on the opposite side of the color filter CF to the back surface 11S2.

[0051] The first layer LY1 of the semiconductor substrate 11 is further provided with an element isolation section 12 surrounding the PD 51. The element isolation section 12 is a wall-shaped member that extends in the Z-axis direction at the boundary position between the adjacent sensor pixels 110 and surrounds each PD 51. The element isolation section 12 electrically isolates the adjacent sensor pixels 110. The element isolation section 12 also prevents noise such as color mixing from occurring due to leakage light from the adjacent sensor pixels 110 entering the PD 51. The element isolation section 12 is made of an insulating material such as silicon oxide.

[0052] In addition to the MEM59, pixel transistors such as TR52A to 52C and FD53 are formed in the second level LY2. The RST54, AMP55, SEL56, and OFG58 may be formed in the second level LY2. The MEM59 is located, for example, below the transfer gates TRY, TRX, and TRG in TR52B to 52C. The second level LY2 further includes a vertical trench gate 52G extending in the depth direction (+Z direction) from the lower part of the transfer gate TRZ provided on the surface 11S1. The tip of the vertical trench gate 52G reaches the PD51. The vertical trench gate 52G constitutes a part of the "charge transfer section" and connects the PD51 and the transfer gate TRZ, respectively, and becomes a path for transferring charges from the PD51 to the transfer destination MEM59 via the buffer BUF. Two or more vertical trench gates may be arranged adjacent to each other in one sensor pixel 110.

[0053] The second story LY2 may further include a light-shielding wall 13 extending in the Z-axis direction. The MEM 59 is disposed so as to be sandwiched between two light-shielding walls 13. The light-shielding walls 13 are members that prevent light from entering the MEM 59.

[0054] Between the PD51 and the MEM59, a MEM light-shielding film 14 is provided spreading along the XY plane (FIG. 4). The MEM light-shielding film 14 is a member that prevents light from entering the MEM59, similar to the light-shielding wall 13, and suppresses the occurrence of noise due to the light that has passed through the PD51 entering the MEM59. Note that the light that enters from the rear surface 11S2 and passes through the PD51 without being absorbed by the PD51 is reflected by the MEM light-shielding film 14 and enters the PD51 again. That is, the MEM light-shielding film 14 also functions as a reflector, and improves the photoelectric conversion efficiency by making the light that has passed through the PD51 enter the PD51 again. However, the MEM light-shielding film 14 is provided with an opening 14K through which the charge generated by the PD51 can pass. The vertical trench gate 52G is provided so as to penetrate the opening 14K. The MEM light-shielding film 14 is preferably provided over the entire XY plane of the pixel array section 111, except for the opening 14K. In addition, the MEM light-shielding film 14 may be connected to the light-shielding wall 13 .

[0055] Furthermore, the opening 14K is provided at a position other than the center of the pixel region 120. As described above, the MEM light-shielding film 14 also serves as a reflector that reflects transmitted light from the PD 51 and makes it incident again on the PD 51. For this reason, by providing the opening 14K away from the vicinity of the center of the pixel region 120 where the intensity of the light collected by the on-chip lens LNS is the highest, it is possible to suppress a decrease in the amount of reflected light in the MEM light-shielding film 14. Here, MEM light-shielding film 14 is a specific example corresponding to a "first light-shielding film" in the present disclosure, and opening 14K is a specific example corresponding to an "opening" in the present disclosure.

[0056] The MEM light-shielding film 14 and the light-shielding wall 13 each have a two-layer structure, for example, an inner layer portion and an outer layer portion surrounding the inner layer portion. The inner layer portion is made of a material containing at least one of a simple metal, a metal alloy, a metal nitride, and a metal silicide having light-shielding properties. More specifically, the inner layer portion may be made of Al (aluminum), Cu (copper), Co (cobalt), W (tungsten), Ti (titanium), Ta (tantalum), Ni (nickel), Mo (molybdenum), Cr (chromium), Ir (iridium), platinum iridium, TiN (titanium nitride), or a tungsten silicon compound. Among them, Al (aluminum) is the most optically preferable material. The inner layer portion may be made of graphite or an organic material. The outer layer portion is made of an insulating material such as SiOx (silicon oxide). The outer layer portion ensures electrical insulation between the inner layer portion and the semiconductor substrate 11.

[0057] In this embodiment, the semiconductor substrate 11 is, for example, a P type (first conductivity type), and the PD 51 and the MEM 59 are an N type (second conductivity type).

[0058] The image detection pixel 110R and the image detection pixel 110G have substantially the same configuration as the image detection pixel 110B, except that the colors of the color filters CF are different.

[0059] In the planar configuration example of the sensor pixel 110 shown in Fig. 3, the image detection pixels 110R, 110G, and 110B form a so-called Bayer arrangement in the XY plane. Specifically, a first row in which the image detection pixels 110R and the image detection pixels 110G are alternately arranged in the Y-axis direction, which is the row direction, and a second row in which the image detection pixels 110G and the image detection pixels 110B are alternately arranged in the Y-axis direction are alternately arranged in the X-axis direction. That is, a first column in which the image detection pixels 110R and the image detection pixels 110G are alternately arranged in the X-axis direction, which is the column direction, and a second column in which the image detection pixels 110G and the image detection pixels 110B are alternately arranged in the X-axis direction are alternately arranged in the Y-axis direction.

[0060] However, in the pixel array section 111, the first and second image plane phase difference detection pixels ZAF1, ZAF2 are arranged between the image detection pixels 110R, 110G, and 110B that are aligned in the X-axis direction and the Y-axis direction, respectively. Specifically, in the planar configuration example of the sensor pixel 110 shown in Fig. 3, the first and second image plane phase difference detection pixels ZAF1, ZAF2 are each arranged at several positions where the image detection pixel 110G should be arranged.

[0061] The pixel region 120 in the first image surface phase difference detection pixel ZAF1 and the pixel region 120 in the second image surface phase difference detection pixel ZAF2 each include a first sub-pixel region 121 and a second sub-pixel region 122 that are adjacent to each other and are divided in the Y-axis direction. Furthermore, the first image surface phase difference detection pixel ZAF1 has a ZAF light-shielding film 16-1 provided in the first sub-pixel region 121, and the second image surface phase difference detection pixel ZAF2 has a ZAF light-shielding film 16-2 provided in the second sub-pixel region 122. Here, the ZAF light-shielding film 16 (16-1, 16-2) is a specific example corresponding to a "second light-shielding film" in the present disclosure.

[0062] In the first image plane phase difference detection pixel ZAF1, the first sub-pixel region 121 in which the ZAF light shielding film 16-1 is provided includes an overlapping region that overlaps with the opening 14K in the pixel region 120. In addition, in the second image plane phase difference detection pixel ZAF2, the second sub-pixel region 122 in which the ZAF light shielding film 16-2 is provided includes an overlapping region that overlaps with the opening 14K in the pixel region 120. That is, in this embodiment, both the ZAF light shielding film 16-1 and the ZAF light shielding film 16-2 overlap with the opening 14K in the Z-axis direction.

[0063] 4, the first image plane phase difference detection pixel ZAF1 has substantially the same configuration as the image detection pixels 110R, 110G, and 110B, except that it further includes a ZAF light-shielding film 16-1. Moreover, the first image plane phase difference detection pixel ZAF1 and the second image plane phase difference detection pixel ZAF2 have substantially the same configuration, except that the ZAF light-shielding films 16-1 and 16-2 are disposed at different positions.

[0064] (Operation of the sensor pixel 110) Next, the operation of the sensor pixel 110 will be described with reference to Fig. 2 to Fig. 4. In the sensor pixel 110, first, based on the drive control of the system control unit 115, a high-level drive signal is supplied to the OFG 58 and the transfer gate TRZ before exposure, thereby turning on the OFG 58 and the transfer gate TRZ. This causes the charge accumulated in the PD 51 to be discharged to the discharge unit OFD, and the PD 51 is reset.

[0065] After the PD 51 is reset, the OFG 58 and the transfer gate TRZ are turned off by supplying a low-level drive signal to each of the OFG 58 and the transfer gate TRZ based on the drive control of the system control unit 115. This starts exposure in all the sensor pixels 110 in the pixel array unit 111, and charges are generated and accumulated in each PD 51 that receives light from the subject.

[0066] After the scheduled exposure time has elapsed, in all of the sensor pixels 110 in the pixel array unit 111, the drive signals to the transfer gates TRZ and TRY are turned on based on the drive control of the system control unit 115. As a result, in each sensor pixel 110, the charge accumulated in the PD51 is transferred from the PD51 to the MEM59 via the transfer gates TRZ and TRY, and is temporarily held in the MEM59.

[0067] Next, based on the drive control of the system control unit 115, the drive signals to the transfer gates TRZ and TRY are turned off, and then a read operation is performed to sequentially read out the charges held in the MEM59 of each sensor pixel 110. The charge read operation is performed, for example, row by row in the pixel array unit 111, and specifically, the transfer gates TRX and TRG are turned on by a drive signal for each row to be read out. As a result, the charges held in the MEM59 of each sensor pixel 110 are transferred to the FD53 row by row.

[0068] Thereafter, when the SEL 56 is turned on by a drive signal, an electrical signal indicating a level according to the charge held in the FD 53 is output to the column signal processing unit 113 through the VSL 117 via the AMP 55 and the SEL 56 in sequence.

[0069] Here, with reference to FIGS. 5 and 6, the sensitivity of the first image surface phase difference detection pixel ZAF1 to incident light will be compared with the sensitivity of the second image surface phase difference detection pixel ZAF2 to incident light.

[0070] Fig. 5 shows how incident light passes through the on-chip lens LNS and enters the PD 51 in the first image surface phase difference detection pixel ZAF1. Fig. 5(A) is a schematic plan view of the first image surface phase difference detection pixel ZAF1 along the XY plane, and Fig. 5(B) is a schematic cross-sectional view of the first image surface phase difference detection pixel ZAF1 along the YZ plane. First image surface phase difference detection pixel ZAF1 In the first image plane phase difference detection pixel ZAF1, since the ZAF light shielding film 16-1 is provided in the first sub-pixel region 121, the incident light L1 incident on the first sub-pixel region 121 is blocked by the ZAF light shielding film 16-1 and does not enter the PD51. Therefore, only the incident light L2 incident on the second sub-pixel region 122 enters the PD51. In addition, since the opening 14K is not present in the second sub-pixel region 122 in the first image plane phase difference detection pixel ZAF1, the incident light L2 transmitted through the PD51 is reflected by the MEM light shielding film 14 and enters the PD51 again. As a result, the first image plane phase difference detection pixel ZAF1 exhibits high sensitivity in the second sub-pixel region 122 as shown by the curve C1 in FIG. 5C. The curve C1 in FIG. 5C represents the sensitivity distribution of the PD51 of the first image plane phase difference detection pixel ZAF1 with respect to the angle of the incident light.

[0071] 6 shows how incident light passes through the on-chip lens LNS and enters the PD51 in the second image plane phase difference detection pixel ZAF2. FIG. 6A is a schematic plan view of the second image plane phase difference detection pixel ZAF2 along the XY plane, and FIG. 6B is a schematic cross-sectional view of the second image plane phase difference detection pixel ZAF2 along the YZ plane. In the second image plane phase difference detection pixel ZAF2, the ZAF light-shielding film 16-2 is provided in the second sub-pixel region 122, so that the incident light L2 that enters the second sub-pixel region 122 is blocked by the ZAF light-shielding film 16-2 and does not enter the PD51. Therefore, only the incident light L1 that enters the first sub-pixel region 121 enters the PD51. Furthermore, since there is no opening 14K in the first sub-pixel region 121 of the second image plane phase difference detection pixel ZAF2, the incident light L1 that has passed through the PD51 is reflected by the MEM light shielding film 14 and is incident on the PD51 again. As a result, the second image plane phase difference detection pixel ZAF2 exhibits high sensitivity in the first sub-pixel region 121, as shown by the curve C2 in Fig. 6C. The curve C2 in Fig. 6C represents the sensitivity distribution of the PD51 of the second image plane phase difference detection pixel ZAF2 with respect to the angle of the incident light.

[0072] As shown in Figures 5C and 6C, according to the first image surface phase difference detection pixel ZAF1 and the second image surface phase difference detection pixel ZAF2 of this embodiment, phase difference sensitivity that is symmetric with respect to the incident angle can be obtained.

[0073] 7A and 7B as a reference example, when an opening 14K exists in the first sub-pixel region 121 that is not blocked by the ZAF light-shielding film 16-2, a part of the incident light L1 that has passed through the PD51 passes through to the MEM 59 without being reflected by the MEM light-shielding film 14. For this reason, as shown in FIG. 7C, the peak value of the sensitivity distribution in the second image plane phase difference detection pixel ZAF102 shown by the solid curve C102 is lower by, for example, Δ2 compared to the peak value of the sensitivity distribution in the first image plane phase difference detection pixel ZAF1 shown by the dashed curve C1. In this way, when the first image plane phase difference detection pixel ZAF1 in which the ZAF light shielding film 16-1 is provided so as to cover the opening 14K and the second image plane phase difference detection pixel ZAF2 in which the opening 14K is not shielded by the ZAF light shielding film 16-2 are mixed, a phase difference sensitivity with low symmetry is obtained, which may cause a deterioration in the phase difference detection characteristics.

[0074] [Effects of the solid-state imaging device 101] As described above, in the solid-state imaging device 101 of the present embodiment, in the first image plane phase difference detection pixel ZAF1, the ZAF light shielding film 16-1 is provided in the first sub-pixel region 121 overlapping with the opening 14K of the MEM light shielding film 14. In addition, in the second image plane phase difference detection pixel ZAF2, the ZAF light shielding film 16-2 is provided in the second sub-pixel region 122 overlapping with the opening 14K of the MEM light shielding film 14. For this reason, for example, the variation between the detection sensitivity of the first image plane phase difference detection pixel ZAF1 and the detection sensitivity of the second image plane phase difference detection pixel ZAF2 is reduced compared to a case in which the first image plane phase difference detection pixel ZAF1 in which the ZAF light shielding film 16-1 does not overlap with the opening 14K and the first image plane phase difference detection pixel ZAF1 in which the ZAF light shielding film 16-2 overlaps with the opening 14K are mixed.

[0075] Therefore, according to the solid-state imaging device 101 of the present embodiment, the variation in detection sensitivity in the first and second image plane phase difference detection pixels ZAF1, ZAF2 is reduced, and therefore excellent phase difference detection characteristics can be achieved.

[0076] <2. Modification of the First Embodiment> (Third Modification) [Array of sensor pixels 110 in pixel array section 111A] FIG. 8 is a schematic plan view illustrating an arrangement of the sensor pixels 110 in a pixel array section 111A according to a third modified example of the first embodiment.

[0077] In the pixel array section 111 of the first embodiment, the second image plane phase difference detection pixel ZAF2 is provided in a second row that is two rows away in the X-axis direction from the first row in which the first image plane phase difference detection pixel ZAF1 is provided. In contrast, in the pixel array section 111A of this modified example, the second image plane phase difference detection pixel ZAF2 is provided in a second row adjacent to the first row in which the first image plane phase difference detection pixel ZAF1 is provided. Note that, also in the pixel array section 111A, the ZAF light shielding film 16-1 and the opening 14K are provided in the first sub-pixel region 121 in the first image plane phase difference detection pixel ZAF1, and the ZAF light shielding film 16-2 and the opening 14K are provided in the second sub-pixel region 122 in the second image plane phase difference detection pixel ZAF2. Therefore, the pixel array section 111A of this modified example can be expected to have the same effect as the pixel array section 111 of the first embodiment.

[0078] (Fourth Modification) [Array of sensor pixels 110 in pixel array section 111B] FIG. 9 is a schematic plan view illustrating an arrangement of the sensor pixels 110 in a pixel array section 111B according to a fourth modified example of the first embodiment.

[0079] In the pixel array section 111 of the first embodiment, the first and second image plane phase difference detection pixels ZAF1 and ZAF2 are arranged at some positions where the image detection pixel 110G should be arranged. In contrast, in the pixel array section 111B of this modified example, the first and second image plane phase difference detection pixels ZAF1 and ZAF2 are arranged at positions where the image detection pixel 110B should be arranged. Note that in the pixel array section 111B as well, the ZAF light shielding film 16-1 and the opening 14K are provided in the first sub-pixel region 121 in the first image plane phase difference detection pixel ZAF1, and the ZAF light shielding film 16-2 and the opening 14K are provided in the second sub-pixel region 122 in the second image plane phase difference detection pixel ZAF2. Therefore, the pixel array section 111B of this modified example can be expected to have the same effect as the pixel array section 111 of the first embodiment.

[0080] <3. Second embodiment> 10 shows an example of a planar configuration of a pixel array section 211 according to a second embodiment of the present technology. In the pixel array section 111 according to the first embodiment, the ZAF light-shielding film 16-1 and the opening 14K are provided in the first sub-pixel region 121 in the first image plane phase difference detection pixel ZAF1, and the ZAF light-shielding film 16-2 and the opening 14K are provided in the second sub-pixel region 122 in the second image plane phase difference detection pixel ZAF2. In contrast, in the pixel array section 211 according to the present embodiment, the ZAF light-shielding film 16-1 is provided in the first sub-pixel region 121 and the opening 14K is provided in the second sub-pixel region 122 in the first image plane phase difference detection pixel ZAF1. Furthermore, in the second image plane phase difference detection pixel ZAF2, the ZAF light-shielding film 16-2 is provided in the second sub-pixel region 122 and the opening 14K is provided in the first sub-pixel region 121. Except for these points, the pixel array section 211 of the present embodiment has substantially the same configuration as the pixel array section 111 of the above-described first embodiment.

[0081] In the pixel array section 211 of the present embodiment, in the first image plane phase difference detection pixel ZAF1, an opening 14K is provided in the second sub-pixel region 122 where the ZAF light shielding film 16-1 does not exist. Therefore, a part of the incident light that is incident on the second sub-pixel region 122 of the first image plane phase difference detection pixel ZAF1 passes through the opening 14K without being reflected by the MEM light shielding film 14. Therefore, compared to the pixel array section 111, the phase difference sensitivity of the first image plane phase difference detection pixel ZAF1 is reduced. Similarly, a part of the incident light that is incident on the first sub-pixel region 121 of the second image plane phase difference detection pixel ZAF2 passes through the opening 14K without being reflected by the MEM light shielding film 14. This is because in the pixel array section 211, in the second image plane phase difference detection pixel ZAF2, an opening 14K is provided in the first sub-pixel region 121 where the ZAF light shielding film 16-2 does not exist. For this reason, compared to the pixel array section 111, the phase difference sensitivity in the second image plane phase difference detection pixel ZAF2 also decreases.

[0082] In this way, in the pixel array section 211 of the present embodiment, the opening 14K is provided in the region where the ZAF light shielding films 16-1, 16-2 are not present in both the first image plane phase difference detection pixel ZAF1 and the second image plane phase difference detection pixel ZAF2. Therefore, compared with the pixel array section 111 in the first embodiment, both the phase difference sensitivity in the first image plane phase difference detection pixel ZAF1 and the phase difference sensitivity in the second image plane phase difference detection pixel ZAF2 are reduced. However, the symmetry between the distribution of the phase difference sensitivity of the first image plane phase difference detection pixel ZAF1 with respect to the incident angle and the distribution of the phase difference sensitivity of the second image plane phase difference detection pixel ZAF2 with respect to the incident angle is ensured. Therefore, the pixel array section 211 of the present embodiment can be expected to have the same effect as the pixel array section 111 of the first embodiment.

[0083] <4. Third embodiment> FIG. 11 shows a cross-sectional configuration example of a pixel array section 311 according to a third embodiment of the present technology. In the pixel array section 311 of this embodiment, as shown in FIG. 11, an additional light-shielding film 15 is further provided between the PD 51 and the MEM light-shielding film 14. The additional light-shielding film 15 has an opening 15K at a position different from the opening 14K in the YX plane, that is, in a region that does not overlap with the opening 14K in the Z-axis direction. In addition, the tip of the vertical trench gate 52G is separated from the PD 51. However, since the opening 15K is provided, a charge transport path from the PD 51 to the vertical trench gate 52G is secured.

[0084] In the first image plane phase difference detection pixel ZAF1 of the pixel array section 311, for example, the opening 14K and the additional light shielding film 15 are present in the first sub-pixel region 121, and the opening 15K and the ZAF light shielding film 16-1 are present in the second sub-pixel region 122. In the second image plane phase difference detection pixel ZAF2 of the pixel array section 311, the opening 14K and the additional light shielding film 15 are present in the second sub-pixel region 122, and the opening 15K and the ZAF light shielding film 16-2 are present in the first sub-pixel region 121. This reduces the variation in detection sensitivity between the first image plane phase difference detection pixel ZAF1 and the second image plane phase difference detection pixel ZAF2.

[0085] Therefore, a solid-state imaging device including the pixel array unit 311 of this embodiment can also achieve excellent phase difference detection characteristics.

[0086] <5. Application examples to electronic devices> FIG. 12 is a block diagram showing an example configuration of a camera 2000 as an electronic device to which the present technology is applied.

[0087] The camera 2000 includes an optical section 2001 including a group of lenses, an imaging device (imaging device) 2002 to which the above-mentioned solid-state imaging device 101 or the like (hereinafter referred to as the solid-state imaging device 101 or the like) is applied, and a DSP (Digital Signal Processor) circuit 2003 which is a camera signal processing circuit. The camera 2000 also includes a frame memory 2004, a display section 2005, a recording section 2006, an operation section 2007, and a power supply section 2008. The DSP circuit 2003, the frame memory 2004, the display section 2005, the recording section 2006, the operation section 2007, and the power supply section 2008 are connected to each other via a bus line 2009.

[0088] The optical unit 2001 takes in incident light (image light) from a subject and forms an image on an imaging surface of the imaging device 2002. The imaging device 2002 converts the amount of incident light imaged on the imaging surface by the optical unit 2001 into an electrical signal on a pixel-by-pixel basis and outputs the electrical signal.

[0089] The display unit 2005 is formed of a panel-type display device such as a liquid crystal panel or an organic EL panel, and displays moving images or still images captured by the imaging device 2002. The recording unit 2006 records the moving images or still images captured by the imaging device 2002 in a recording medium such as a hard disk or a semiconductor memory.

[0090] An operation unit 2007, under the operation of a user, issues operation commands for various functions of the camera 2000. A power supply unit 2008 appropriately supplies various types of power to the DSP circuit 2003, frame memory 2004, display unit 2005, recording unit 2006, and operation unit 2007 as operating power sources to these devices.

[0091] As described above, by using the above-mentioned solid-state imaging device 101 or the like as the imaging device 2002, it is possible to expect acquisition of good images.

[0092] <6. Application examples for mobile devices> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, etc.

[0093] FIG. 13 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology according to the present disclosure can be applied.

[0094] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 21, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. The integrated control unit 12050 includes a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 120. 53 is shown.

[0095] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0096] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0097] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0098] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0099] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0100] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0101] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0102] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0103] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 15, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0104] FIG. 14 is a diagram showing an example of the installation position of the imaging unit 12031.

[0105] In FIG. 14, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0106] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield in the vehicle interior of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield in the vehicle interior mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the upper part of the windshield in the vehicle interior is mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0107] 14 shows an example of the imaging ranges of the imaging units 12101 to 12104. An imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and an imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0108] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0109] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0110] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0111] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0112] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to the imaging unit 12031 among the configurations described above. Specifically, the solid-state imaging device 101A shown in FIG. 1 and the like can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, excellent operation of the vehicle control system can be expected.

[0113] <7. Other Modifications> Although the present disclosure has been described above by giving several embodiments and modified examples, the present disclosure is not limited to the above embodiments and can be modified in various ways. For example, in the above embodiments, the pixel region 120 includes the first sub-pixel region 121 and the second sub-pixel region 122 that are divided so as to be adjacent to each other in one direction (Y-axis direction), but the present disclosure is not limited to this. For example, as in the pixel array section 411 as a modified example of the present disclosure shown in FIG. 15, the sensor pixels 110 having the pixel region 120 including the third sub-pixel region 123 and the fourth sub-pixel region 124 that are divided so as to be adjacent to each other in the X-axis direction may be mixed. In the pixel array section 411, the third image plane phase difference detection pixel ZAF3 and the fourth image plane phase difference detection pixel ZAF4 are configured to detect a phase difference signal in the X-axis direction. In the third image plane phase difference detection pixel ZAF3, for example, the opening 14K and the ZAF light shielding film 16-3 are provided in the third sub-pixel region 123. Moreover, in the fourth image plane phase difference detection pixel ZAF4, an opening 14K and a ZAF light shielding film 16-4 are provided in the fourth sub-pixel region 124. In the pixel array section 411 having such a configuration, the variation between the detection sensitivity of the third image plane phase difference detection pixel ZAF3 and the detection sensitivity of the fourth image plane phase difference detection pixel ZAF4 is also reduced. Therefore, a solid-state imaging device including this pixel array section 411 can also achieve excellent phase difference detection characteristics.

[0114] Furthermore, the imaging device disclosed herein is not limited to an imaging device that detects the light amount distribution of visible light and acquires it as an image, but may be an imaging device that acquires the distribution of incident amounts of infrared rays, X-rays, particles, etc. as an image.

[0115] Furthermore, the imaging device according to the present disclosure may be in the form of a module in which the imaging section and the signal processing section or the optical system are packaged together.

[0116] According to an image pickup device and an electronic device as an embodiment of the present disclosure, the variation in detection sensitivity in a plurality of image plane phase difference detection pixels is reduced, so that excellent phase difference detection characteristics can be realized. Note that the effect of the present disclosure is not limited to this, and any of the effects described below may be achieved. In addition, the present technology may have the following configuration. (1) A semiconductor layer including a front surface and a back surface opposite to the front surface; a photoelectric conversion unit provided in the semiconductor layer and capable of generating charges according to an amount of received light by photoelectric conversion; a charge retention portion provided between the surface of the semiconductor layer and the photoelectric conversion portion and capable of retaining the charge; a first light-shielding film located between the photoelectric conversion unit and the charge retention unit and including an opening through which the charge can pass; a second light-shielding film located on the opposite side of the first light-shielding film from the photoelectric conversion unit; A plurality of image surface phase difference detection pixels each having The second light-shielding films in each of the plurality of image surface phase difference detection pixels are provided in a first region including an overlap region overlapping with the opening in a pixel region occupied by the photoelectric conversion unit, or are provided in a second region other than the first region in the pixel region. Imaging device. (2) the pixel region includes a first sub-pixel region and a second sub-pixel region that are adjacent to each other in a first direction; The plurality of image surface phase difference detection pixels include a first image surface phase difference detection pixel having the second light shielding film provided in the first sub-pixel region; a second image surface phase difference detection pixel having the second light shielding film provided in the second sub-pixel region; Includes The imaging device according to (1) above. (3) a charge transfer section including a vertical trench gate extending from the front surface side through the opening toward the charge storage section. The imaging device according to (1) or (2) above. (4) The opening is provided at a position other than the center of the pixel region. The imaging device according to any one of (1) to (3) above. (5) The imaging device further includes a plurality of imaging pixels arranged in a first direction and a second direction, The plurality of image surface phase difference detection pixels are disposed between the plurality of imaging pixels in each of the first direction and the second direction. The imaging device according to any one of (1) to (4) above. (6) the plurality of imaging pixels further include a plurality of first to third imaging pixels including first to third color filters, which are periodically arranged in each of the first direction and the second direction; Each of the image surface phase difference detection pixels is disposed at one of a plurality of first positions where the plurality of first imaging pixels should be disposed, and is disposed in place of one of the plurality of first imaging pixels. The imaging device according to (5) above. (7) An electronic device including an imaging device, The imaging device includes: A semiconductor layer including a front surface and a back surface opposite to the front surface; a photoelectric conversion unit provided in the semiconductor layer and capable of generating charges according to an amount of received light by photoelectric conversion; a charge retention portion provided between the surface of the semiconductor layer and the photoelectric conversion portion and capable of retaining the charge; a first light-shielding film located between the photoelectric conversion unit and the charge retention unit and including an opening through which the charge can pass; a second light-shielding film located on the opposite side of the first light-shielding film from the photoelectric conversion unit; A plurality of image surface phase difference detection pixels each having The second light-shielding films in each of the plurality of image surface phase difference detection pixels are provided in a first region including an overlap region overlapping with the opening in a pixel region occupied by the photoelectric conversion unit, or are provided in a second region other than the first region in the pixel region. electronic equipment.

[0117] This application claims priority based on Japanese Patent Application No. 2019-56165, filed on March 25, 2019 in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0118] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur to those skilled in the art depending on design requirements and other factors, and that such modifications are within the scope of the appended claims and their equivalents.

Claims

1. A semiconductor layer including a front surface and a back surface opposite to the front surface; a photoelectric conversion unit provided in the semiconductor layer and capable of generating charges according to an amount of received light by photoelectric conversion; a charge retention portion provided between the surface of the semiconductor layer and the photoelectric conversion portion and capable of retaining the charge; a first light-shielding film located between the photoelectric conversion unit and the charge retention unit and including an opening through which the charge can pass; a second light-shielding film located on an opposite side of the first light-shielding film from the photoelectric conversion unit; One lens and A plurality of image surface phase difference detection pixels each having the second light-shielding films in each of the plurality of image surface phase difference detection pixels are all provided in a first sub-pixel region including an overlapping region overlapping with the opening in a pixel region occupied by the photoelectric conversion unit, or all are provided in a second sub-pixel region other than the first sub-pixel region in the pixel region, The single lens is provided in common to both the first sub-pixel region and the second sub-pixel region that are adjacent to each other and are divided in a first direction. Imaging device.

2. The plurality of image surface phase difference detection pixels include a first image surface phase difference detection pixel having the second light shielding film provided in the first sub-pixel region; a second image surface phase difference detection pixel having the second light shielding film provided in the second sub-pixel region; Includes The imaging device according to claim 1.

3. a charge transfer section including a vertical trench gate extending from the front surface side through the opening toward the charge storage section. The imaging device according to claim 1.

4. The opening is provided at a position other than the center of the pixel region. The imaging device according to claim 1.

5. The imaging device further includes a plurality of imaging pixels arranged in the first direction and the second direction, The plurality of image surface phase difference detection pixels are disposed between the plurality of imaging pixels in each of the first direction and the second direction. The imaging device according to claim 1.

6. the plurality of imaging pixels further include a plurality of first to third imaging pixels including first to third color filters, which are periodically arranged in each of the first direction and the second direction; Each of the image surface phase difference detection pixels is disposed at one of a plurality of first positions where the plurality of first imaging pixels are to be disposed, and is substituted for one of the plurality of first imaging pixels.

6. The imaging device according to claim 5.

7. An electronic device including an imaging device, The imaging device includes: A semiconductor layer including a front surface and a back surface opposite to the front surface; a photoelectric conversion unit provided in the semiconductor layer and capable of generating charges according to an amount of received light by photoelectric conversion; a charge retention portion provided between the surface of the semiconductor layer and the photoelectric conversion portion and capable of retaining the charge; a first light-shielding film located between the photoelectric conversion unit and the charge retention unit and including an opening through which the charge can pass; a second light-shielding film located on an opposite side of the first light-shielding film from the photoelectric conversion unit; One lens and A plurality of image surface phase difference detection pixels each having the second light-shielding films in each of the plurality of image surface phase difference detection pixels are all provided in a first sub-pixel region including an overlapping region overlapping with the opening in a pixel region occupied by the photoelectric conversion unit, or all are provided in a second sub-pixel region other than the first sub-pixel region in the pixel region, The single lens is provided in common to both the first sub-pixel region and the second sub-pixel region that are adjacent to each other and are divided in a first direction. electronic equipment.

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