Method and apparatus for detecting surface defects on semiconductor wafer

Abstract

An embodiment of the present application discloses a method and apparatus for detecting surface defects on a semiconductor wafer, the method including: in response to acquiring a first standard wafer including a first standard defect, determining a first standard ratio value between a reflected light intensity received by a first light receiving system and a reflected light intensity received by a second light receiving system; in response to acquiring a second standard wafer including a second standard defect, determining a second standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system; and adjusting the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system between the first standard ratio value and the second standard ratio value to detect surface defects on the wafer to be detected.

Description

[Technical field]

[0001] This application claims priority to a Chinese patent application filed with the China Patent Office on July 7, 2021, bearing application number 202110767105.X, the entire contents of which are incorporated herein by reference.

[0002] FIELD Embodiments of the present application relate to the technical field of semiconductor wafer detection, such as a method and apparatus for detecting surface defects on a semiconductor wafer, an optical detection instrument, and a computer-readable storage medium. [Background technology]

[0003] Silicon material has become one of the most commonly used materials in the semiconductor industry due to its good performance in terms of material structure, mechanical strength, chemical and electrical stability. It is inevitable to have good defect control for silicon material, and good surface defect metrology operation is required in silicon wafer manufacturing, so simplifying the detection method of surface defects is of great significance to the semiconductor wafer manufacturing industry. Summary of the Invention

[0004] In a first aspect, the present embodiment comprises: A method for detecting surface defects on a semiconductor wafer based on an optical detection device including a light emitting system and a light receiving system including a first light receiving system and a second light receiving system, the method comprising: in response to acquiring a first standard wafer including a first standard defect including a dent defect whose proportion is within a first preset range, determining a first standard ratio value between a reflected light intensity received at the first light receiving system and a reflected light intensity received at the second light receiving system after light emitted from the light emitting system is reflected through a surface of the first standard wafer; In response to obtaining a second standard wafer including a second standard defect including a convex defect whose proportion is within a second preset range, determining a second standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after the light emitted by the light emitting system is reflected through a surface of the second standard wafer; and adjusting a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system to be between the first standard ratio value and the second standard ratio value, thereby detecting surface defects of the wafer to be detected. A method for detecting surface defects on a semiconductor wafer is provided.

[0005] In a second aspect, the present embodiment comprises A semiconductor wafer surface defect detection apparatus for performing detection based on an optical detection device including a light emitting system and a light receiving system including a first light receiving system and a second light receiving system, a first standard ratio value determining module configured to, in response to obtaining a first standard wafer including first standard defects including dent defects whose proportion is within a first preset range, determine a first standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after the emitted light of the light emitting system is reflected through a surface of the first standard wafer; a second standard ratio value determining module configured to, in response to obtaining a second standard wafer including a second standard defect including a convex defect whose proportion is within a second preset range, determine a second standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after the emitted light of the light emitting system is reflected through a surface of the second standard wafer; and a light intensity ratio value adjustment module configured to adjust a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system between the first standard ratio value and the second standard ratio value to detect surface defects of a wafer to be detected. An apparatus for detecting surface defects on a semiconductor wafer is also provided.

[0006] In a third aspect, the present embodiment comprises There is further provided an optical detection instrument comprising a light emitting system, a light receiving system, and a processor configured to perform the above method for detecting surface defects on a semiconductor wafer.

[0007] In a fourth aspect, the present application provides a method for producing a composition comprising the steps of: There is further provided a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the above-described method for detecting surface defects on a semiconductor wafer. [Brief description of the drawings]

[0008] Other features, objects and advantages of the present application will become more apparent upon reading and referring to the following description of non-limiting embodiments illustrated in the drawings, in which:

[0009] [Figure 1] 1 is a schematic diagram showing a flow of a method for detecting surface defects on a semiconductor wafer according to an embodiment of the present application. [Diagram 2] FIG. 2 is a schematic diagram showing a flow of a first standard ratio value determining method according to an embodiment of the present application. [Diagram 3] FIG. 2 is a schematic diagram showing a flow of a second standard ratio value determining method according to an embodiment of the present application. [Figure 4] FIG. 13 is a schematic diagram of a flow of a method for determining a light intensity ratio value when detecting a wafer to be detected according to an embodiment of the present application. [Diagram 5] 1 is a structural schematic diagram of a surface defect inspection device for a semiconductor wafer according to an embodiment of the present application. [Figure 6] FIG. 2 is a structural schematic diagram of an optical detection device according to an embodiment of the present application. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution of the present application will be fully described below by specific embodiments with reference to the drawings in the embodiments of the present application. It is clear that the described embodiments are only some of the embodiments of the present application, and are not all of the embodiments, and all other embodiments obtained based on the embodiments of the present application without the need for creative labor by those skilled in the art are all within the scope of protection of the present application.

[0011] 1 is a schematic diagram of a flow of a surface defect detection method for a semiconductor wafer according to an embodiment of the present application, the surface defect detection method according to the embodiment of the present application can evaluate and analyze the surface defects of a semiconductor wafer, the method performs detection based on an optical detection device, the optical detection device includes a light emitting system and a light receiving system, the light receiving system includes a first light receiving system and a second light receiving system. As shown in FIG. 1, the surface defect detection method for a semiconductor wafer according to an embodiment of the present application includes:

[0012] In S101, when a first standard wafer including a first standard defect is obtained, an emitted light from a light emitting system is reflected through a surface of the first standard wafer, and then a first standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system is determined.

[0013] Wherein, the first standard defect includes a dent defect, and the ratio of the dent defect is within a first preset range. Exemplarily, a semiconductor wafer including a dent defect is selected as a first standard wafer, the defect in the first standard wafer is the first standard defect, and the ratio of the dent defect in the first standard defect must be within a first preset range, the first preset range may be 80% to 100%, or may be 90% to 100%, and the larger the value in the first preset range, the larger the ratio of the dent defect, and the higher the accuracy of the first standard ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system. Here, according to actual precision needs, a first preset range, in which 90%-100% precision is higher than 80%-100% precision, can be appropriately adjusted, and then a corresponding first standard wafer can be selected based on the first preset range, and a first standard ratio value can be obtained by a first standard defect of the first standard wafer, that is, the first preset range can be determined according to actual precision needs, the first standard wafer can be selected in the first preset range, and the first standard ratio value can be determined by detecting the first standard defect of the first standard wafer.

[0014] In S102, when a second standard wafer including a second standard defect is obtained, after the emitted light of the light emitting system is reflected through the surface of the second standard wafer, a second standard ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is determined.

[0015] Here, the second standard defects include bump defects, and the proportion of the bump defects is within a second preset range. Exemplarily, a semiconductor wafer including bump defects is selected as the second standard wafer, the defects in the second standard wafer are the second standard defects, and the proportion of the bump defects in the second standard defects should be within a second preset range, and the second preset range may be 80% to 100%, or 90% to 100%, where the second preset range may be the same as or different from the first preset range, and the embodiment of the present application does not limit the first preset range and the second preset range. The larger the value in the second preset range, the larger the proportion of the bump defects, and the higher the accuracy of the second standard ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system. Here, the second preset range can be appropriately adjusted according to actual precision needs, and then a corresponding second standard wafer can be selected based on the second preset range, and the second standard ratio value can be obtained by the second standard defect of the second standard wafer, that is, the second preset range can be determined according to actual precision needs, the second standard wafer can be selected in the second preset range, and the second standard ratio value can be determined by detecting the second standard defect of the second standard wafer.

[0016] In S103, a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is adjusted between a first standard ratio value and a second standard ratio value to detect surface defects on the wafer to be detected.

[0017] For example, the surface defects of the wafers to be detected are unknown, the wafers to be detected may include either concave defects or convex defects, and the proportion of concave defects and convex defects is unknown. A first standard wafer having a large proportion of concave defects and a second standard wafer having a large proportion of convex defects are two extreme situations of the wafers to be detected, and the first standard ratio value and the second standard ratio value are also two extreme situations of the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system. For general semiconductor wafers that include both concave defects and convex defects, the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system can be adjusted between the first standard ratio value and the second standard ratio value to be further applicable to the detection of surface defects of semiconductor wafers with unknown common defects. In this way, by adjusting the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system between the first standard ratio value and the second standard ratio value, the wafer to be detected is detected, and the defects and the defect distribution status contained in the wafer to be detected are obtained, and based on the defects and the defect distribution status contained in the wafer to be detected, the semiconductor wafer preparation process can be improved and the semiconductor wafer preparation process can be optimized.

[0018] In the method for detecting surface defects of semiconductor wafers according to the embodiments of the present application, detection is performed using a light emitting system and a light receiving system of an optical detection instrument, and defects can be detected only using a first light receiving system and a second light receiving system, so that the detection method is simple. At the same time, a first standard wafer whose surface defects are concave defects and a second standard wafer whose surface defects are convex defects are respectively detected, and a first standard ratio value for detecting the first standard defect in the first standard wafer and a second standard ratio value for detecting the second standard wafer are respectively obtained. When detecting a wafer to be detected, the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is adjusted to be between the first standard ratio value and the second standard ratio value, so that concave defects and convex defects in the wafer to be detected can be accurately detected, and the accuracy of defect detection can be further improved, so that defects on the surface of the semiconductor wafer can be detected in a more efficient and effective manner.

[0019] The method for detecting surface defects on a semiconductor wafer according to the embodiment of the present application can simplify the detection method for surface defects and improve the accuracy of detecting the types of surface defects.

[0020] 2 is a schematic diagram of a flow of a first standard ratio value determining method according to an embodiment of the present application. As shown in FIG. 2, the first standard ratio value determining method according to an embodiment of the present application includes:

[0021] In S201, a first standard defect of a first standard wafer is acquired.

[0022] For example, the first standard wafer is a semiconductor wafer in which the proportion of dent defects contained therein is within a first preset range, and the first preset range may be 80% to 100%, or 90% to 100%, and the embodiments of the present application do not specifically limit this. The method of acquiring the first standard defects in the first standard wafer may be obtained by detection using some electron microscope equipment, or may be obtained by other high-precision equipment, and the embodiments of the present application do not limit the method of acquiring the first standard defects in the first standard wafer.

[0023] In one embodiment, the first standard defect of the first standard wafer may be acquired in advance by another device.

[0024] In S202, if the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is a first ratio value, the light emitting system is controlled to emit the emitted light onto the surface of the first standard wafer, defect detection is performed on the first standard wafer, and a first detected defect of the first standard wafer is obtained.

[0025] Illustratively, the first ratio value here is set based on experience, and generally, the first ratio value can be set to a value smaller than 1.05. After setting the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system as the first ratio value, a preliminary defect detection can be performed on the first standard wafer to obtain a corresponding detection result, and surface defects of the first standard wafer, i.e., first detected defects, can be obtained based on the detection result.

[0026] In S203, it is determined whether the first detected defect matches the first standard defect. In response to the first detected defect matching the first standard defect, S204 is executed, and in response to the first detected defect not matching the first standard defect, S205 is executed.

[0027] In S204, the first ratio value is set as a first standard ratio value.

[0028] In S205, the first ratio value is adjusted, and the process returns to S202.

[0029] Exemplarily, the first standard defect is a detection result obtained by detecting surface defects on the first standard wafer by another device, that is, the type and distribution of defects on the first standard wafer are known by another device. After the first detected defect of the first standard wafer is obtained, the first detected defect can be compared with the first detected defect. If the first detected defect and the first standard defect match, i.e., the type of the detected defect and the distribution of the defect are both the same or almost the same as the type of defect and the distribution of the defect known by other equipment, it can be indicated that the first standard defect of the first standard wafer can be detected when the ratio value of the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is the first ratio value, and it can be determined that the first standard ratio value is the first ratio value set according to experience. On the other hand, if the first detected defect and the first standard defect do not match, i.e., the type of the detected defect and / or the distribution of the defect are both significantly different from the type of the defect and / or the distribution of the defect known by other equipment, it can be indicated that the first standard defect of the first standard wafer has not been detected yet, and the first ratio value can be further adjusted until the first standard defect of the first standard wafer is detected, and then the first standard wafer can be detected. Here, adjusting the first ratio value may refer to adjusting the first ratio value to a larger value or to a smaller value, and the embodiments of the present application are not specifically limited thereto.

[0030] It can be understood that if the equipment is not adjusted and tested accurately, it may not be possible to accurately judge the real defect situation. Therefore, in this embodiment, the first ratio value is continuously adjusted and tested. The actual value of the first standard ratio value is known through the continuous adjustment and testing of the equipment.

[0031] In order to enable the optical detection equipment to perform more accurate detection operations, a judgment standard, for example, a numerical range, may be set for the optical detection equipment, thereby enabling the optical detection equipment to distinguish between concave defects and convex defects, as can be understood.

[0032] For example, if the detected ratio value is greater than a certain standard ratio value, it can be determined that the defect is a concave defect, and if the detected ratio value is less than or equal to the certain standard ratio value, it can be determined that the defect is a convex defect, but the determination method is not limited thereto.

[0033] In one embodiment, when the first detected defect does not match the first standard defect and the number of times the first ratio value is adjusted exceeds a first preset number of times, detection for the first standard wafer is stopped.

[0034] Exemplarily, the first preset number may be a large positive integer, to prevent an infinite loop process from being formed when the first detection defect matching the first standard defect is still not detected after the first ratio value is adjusted multiple times, thereby preventing the detection process from being affected. Here, if the first detection defect matching the first standard defect is still not detected after the first ratio value is adjusted multiple times, the first standard wafer may be replaced and then re-detected, or other parameters of the detection device may be inspected and adjusted.

[0035] From the above, the first standard ratio value determination method of the embodiment of the present application can obtain a relatively accurate first standard ratio value by matching the first detected defect with the first standard defect, and can determine a lower limit of the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system by calibration for the first standard ratio value, and the method can be used to detect semiconductor wafers with many dent defects more accurately.

[0036] Illustratively, the lower limit of the ratio value may be, but is not limited to, 0.95.

[0037] 3 is a flow diagram of a second standard ratio value determining method according to an embodiment of the present application. As shown in FIG. 3, the second standard ratio value determining method according to an embodiment of the present application includes:

[0038] In S301, a second standard defect of a second standard wafer is acquired.

[0039] For example, the second standard wafer is a semiconductor wafer in which the proportion of protruding defects contained therein is within a second preset range, and the second preset range may be 80% to 100%, or 90% to 100%, and the embodiments of the present application do not specifically limit this. The method of acquiring the second standard defects in the second standard wafer may be obtained by detection using some electron microscope equipment, or may be obtained by other high-precision equipment, and the embodiments of the present application do not limit the method of acquiring the second standard defects in the second standard wafer.

[0040] In S302, if the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is a second ratio value, the light emitting system is controlled to emit the emitted light onto the surface of the second standard wafer, defect detection is performed on the second standard wafer, and a second detected defect of the second standard wafer is obtained.

[0041] For example, the second ratio value here is set based on experience, and generally, the second ratio value can be set to a value greater than 1.02. After setting the second ratio value to the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system, initial defect detection can be performed on the second standard wafer to obtain corresponding detection results. Based on the detection results, surface defects of the second standard wafer, i.e., second detected defects, can be obtained.

[0042] In S303, it is determined whether the second detected defect matches the second standard defect. In response to the second detected defect matching the second standard defect, S304 is executed, and in response to the second detected defect not matching the second standard defect, S305 is executed.

[0043] In S304, the second ratio value is set as the second standard ratio value.

[0044] In S305, the second ratio value is adjusted, and the process returns to S302.

[0045] Illustratively, the second standard defects are detection results obtained by detecting surface defects on the second standard wafer using another device, that is, the types and distribution of defects on the second standard wafer are known using another device. After the second detected defect of the second standard wafer is obtained, the second detected defect can be compared with the second detected defect. If the second detected defect matches with the second standard defect, i.e., the type of the detected defect and the distribution of the defect are both the same or almost the same as the type of defect and the distribution of the defect known by other equipment, it can be indicated that the second standard defect of the second standard wafer can be detected when the ratio value of the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is the second ratio value, and it can be determined that the second standard ratio value is the second ratio value set according to experience. On the other hand, if the second detected defect does not match with the second standard defect, i.e., the type of the detected defect and / or the distribution of the defect are both significantly different from the type of the detected defect and / or the distribution of the defect known by other equipment, it can be indicated that the second standard defect of the second standard wafer has not been detected yet, and the second ratio value can be further adjusted until the second standard defect of the second standard wafer is detected. Here, adjusting the second ratio value may refer to adjusting the second ratio value to a larger value or to a smaller value, and the embodiments of the present application are not specifically limited thereto.

[0046] In one embodiment, when the second detected defects do not match the second standard defects and the number of times the second ratio value is adjusted exceeds a second preset number of times, detection for the second standard wafer is stopped.

[0047] Exemplarily, the second preset number of times may be a large positive integer, to prevent the detection process from being affected because the first detection defect matching the first standard defect is still not detected after the second ratio value is adjusted multiple times, forming an infinite loop process. Here, if the first detection defect matching the first standard defect is still not detected after the second ratio value is adjusted multiple times, the second standard wafer may be replaced and then re-detected, or other parameters of the detection device may be inspected and adjusted.

[0048] From the above, the second standard ratio value determination method of the present embodiment can obtain a relatively accurate second standard ratio value by matching the second detected defect with the second standard defect, and can determine an upper limit for the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system by calibrating against the second standard ratio value, which is more accurate when the method is used to detect semiconductor wafers with a large number of protruding defects.

[0049] In one embodiment, after detecting the first standard defect of the first standard wafer and the second standard defect of the second standard wafer, a relatively accurate lower limit and upper limit of the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system can be obtained. Based on this, a specific ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system can be determined before detecting the wafer to be detected. Figure 4 is a schematic diagram of the flow of a method for determining a light intensity ratio value when detecting a wafer to be detected according to an embodiment of the present application. As shown in Figure 4, the method for determining a light intensity ratio value when detecting a wafer to be detected according to an embodiment of the present application includes:

[0050] In S401, a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is adjusted to a detection ratio value that is greater than or equal to a first standard ratio value and less than or equal to a second standard ratio value.

[0051] Illustratively, the detection ratio value may be a numerical value greater than or equal to the first standard ratio value and less than or equal to the second standard ratio value, and may be set to a numerical value within the range from the first standard ratio value to the second standard ratio value based on experience, e.g., 1.25.

[0052] In S402, defects to be detected on a wafer to be detected, including at least one of dent defects and protrusion defects, are acquired.

[0053] For example, the wafer to be detected is also a standard wafer, and differs from the first standard wafer having a large proportion of concave defects and the second standard wafer having a large proportion of protruding defects in that the wafer to be detected may be one having a large proportion of concave defects, one having a large proportion of protruding defects, or one having the same proportions of concave defects and protruding defects, and the wafer to be detected may be one in a lot of semiconductor wafers to be detected. The defects to be detected are surface defects of the wafer to be detected, and can be obtained by detecting the defects to be detected of the wafer to be detected by another device.

[0054] In S403, if the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is a detection ratio value, defect detection is performed on the wafer to be detected, and a third detected defect of the wafer to be detected is obtained.

[0055] For example, the detection ratio value is set to the ratio between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system, and then initial defect detection is performed on the wafer to be detected. Based on the detection result, surface defects on the wafer to be detected, i.e., third detection defects, can be obtained.

[0056] In S404, it is determined whether the third detected defect matches the defect to be detected. In response to the third detected defect matching the defect to be detected, S405 is executed, and in response to the third detected defect not matching the defect to be detected, S406 is executed.

[0057] In S405, the detection ratio value is set to the ratio between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system when detecting another wafer awaiting detection, and defect detection is performed on the other wafer awaiting detection.

[0058] In S406, the detection ratio value is adjusted, and the process returns to S403.

[0059] For example, the defect to be detected is a detection result obtained by detecting surface defects of the wafer to be detected by other equipment, i.e., the type and distribution of defects of the wafer to be detected are known by other equipment. When the ratio value between the intensity of reflected light received by the first light receiving system and the intensity of reflected light received by the second light receiving system is a detection ratio value, a third detected defect of the wafer to be detected can be obtained, the third detected defect includes the type and distribution of the detected defects of the wafer to be detected, and the defect to be detected and the third detected defect are compared, and if the third detected defect and the defect to be detected match, i.e., the type and distribution of the detected defects are both the same or almost the same as the type and distribution of the defects known by the other equipment, the third detected defect of the wafer to be detected is obtained when the ratio value between the intensity of reflected light received by the first light receiving system and the intensity of reflected light received by the second light receiving system is a detection ratio value. It can be shown that the defect can be detected by the first light receiving system and the second light receiving system when detecting another wafer to be detected, and in this case, the detection ratio value set according to experience can be the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system when detecting another wafer to be detected, and on the other hand, if the third detected defect does not match the defect to be detected, that is, the type of the detected defect and / or the distribution state of the defect are both significantly different from the type of the defect and / or the distribution state of the defect known by other equipment, it indicates that the defect to be detected in the wafer to be detected has not yet been detected, and the detection ratio value can be further adjusted until the defect to be detected in the wafer to be detected is detected, and then the wafer to be detected can be detected. Adjusting the detection ratio value here may be adjusting the detection ratio value larger or smaller, and the embodiments of the present application are not specifically limited thereto.

[0060] In one embodiment, when the third detected defects do not match the defects to be detected and the number of times the detection ratio value is adjusted exceeds a third preset number of times, detection for the wafer to be detected is stopped.

[0061] Exemplarily, the third preset number may be a large positive integer, to prevent an infinite loop process from being formed when the third detection defect matching the defect to be detected is still not detected after the detection ratio value is adjusted multiple times, thereby affecting the detection process. Here, if the third detection defect matching the defect to be detected is still not detected after the detection ratio value is adjusted multiple times, the wafer to be detected may be replaced and then re-detected, or other parameters of the detection device may be inspected and adjusted.

[0062] From the above, the method for determining the light intensity ratio value when detecting a wafer to be detected in the embodiment of the present application can obtain a relatively accurate detection ratio value by matching the third detection defect with the defect to be detected, and can determine the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system by calibration for the detection ratio value, and is more accurate when using this method to detect semiconductor wafers.

[0063] Based on the same inventive concept, an embodiment of the present application further provides a semiconductor wafer surface defect detection device, and Fig. 5 is a structural schematic diagram of the semiconductor wafer surface defect detection device according to the embodiment of the present application, which can adopt the semiconductor wafer surface defect detection method according to the embodiment of the present application, which also detects based on an optical detection device, the optical detection device includes a light emitting system and a light receiving system, and the light receiving system includes a first light receiving system and a second light receiving system. As shown in Fig. 5, the semiconductor wafer surface defect detection device according to the embodiment of the present application includes a first standard ratio value determining module 501, a second standard ratio value determining module 502 and a light intensity ratio value adjusting module 503, among which: the first standard ratio value determining module 501 is configured to, in response to obtaining a first standard wafer including a first standard defect including a dent defect whose proportion is within a first preset range, determine a first standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after the emitted light of the light emitting system is reflected through a surface of the first standard wafer; the second standard ratio value determining module 502 is configured to, in response to obtaining a second standard wafer including a second standard defect including a convex defect whose proportion is within a second preset range, determine a second standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after the emitted light of the light emitting system is reflected through a surface of the second standard wafer; The light intensity ratio value adjustment module 503 is configured to adjust the ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system between a first standard ratio value and a second standard ratio value to detect surface defects of the wafer to be detected.

[0064] The semiconductor wafer surface defect inspection apparatus according to the embodiment of the present application adopts the semiconductor wafer surface defect inspection method according to the embodiment of the present application and has corresponding beneficial effects, which will not be described repeatedly here.

[0065] Based on the same inventive concept, the present application further provides an optical detection instrument, and Fig. 6 is a structural schematic diagram of the optical detection instrument according to the present application. As shown in Fig. 6, the optical detection instrument includes a light emitting system 601, a light receiving system 602 and a processor 603, where the processor 603 can be used to perform the method for detecting surface defects of a semiconductor wafer according to any embodiment of the present application.

[0066] Based on the same inventive concept, the present embodiment When executed by a computer processor, In response to obtaining a first standard wafer including first standard defects including dent defects whose proportions are within a first preset range, determining a first standard ratio value between a reflected light intensity received at the first light receiving system and a reflected light intensity received at the second light receiving system after light emitted from the light emitting system is reflected through a surface of the first standard wafer; In response to obtaining a second standard wafer including a second standard defect including a convex defect whose proportion is within a second preset range, determining a second standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after the emitted light of the light emitting system is reflected through a surface of the second standard wafer; The present invention further provides a computer-readable storage medium having stored thereon a computer program for executing a method for detecting surface defects on a semiconductor wafer, the method including adjusting a ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system between a first standard ratio value and a second standard ratio value, thereby detecting surface defects on the wafer to be detected.

[0067] The computer-readable storage medium according to the embodiment of the present application is not limited to the above-mentioned methods and operations, and can further perform related operations in the semiconductor wafer surface defect detection method according to any embodiment of the present application.

[0068] The storage medium may be a non-transitory storage medium.

[0069] It should be noted that the above are only some examples of the present application and the technical principles applied. Those skilled in the art should understand that the present application is not limited to the specific examples described herein, and the features of each embodiment of the present application can be partially or fully combined or combined with each other, and can be technically driven in cooperation with each other in various ways. Those skilled in the art can make various obvious changes, rearrangements, mutual combinations and substitutions without departing from the scope of protection of the present application. Therefore, although the present application has been described by the above examples, the present application is not limited only to the above examples, and may include many more equivalent examples without departing from the concept of the present application, and the scope of the present application is determined by the appended claims.

Claims

1. 1. A method for detecting surface defects on a semiconductor wafer based on an optical detection device including a light emitting system and a light receiving system including a first light receiving system and a second light receiving system, comprising: in response to acquiring a first standard wafer including a first standard defect including a dent defect whose proportion is within a first preset range, determining a first standard ratio value between a reflected light intensity received at the first light receiving system and a reflected light intensity received at the second light receiving system after an emitted light from the light emitting system is reflected through a surface of the first standard wafer; In response to obtaining a second standard wafer including a second standard defect including a convex defect whose proportion is within a second preset range, determining a second standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after the emitted light of the light emitting system is reflected through a surface of the second standard wafer; and adjusting a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system to be between the first standard ratio value and the second standard ratio value, thereby detecting surface defects of the wafer to be detected. A method for detecting surface defects on a semiconductor wafer.

2. In response to obtaining a first standard wafer including a first standard defect, determining a first standard ratio value between a reflected light intensity received at the first light receiving system and a reflected light intensity received at the second light receiving system after an emitted light from the light emitting system is reflected through a surface of the first standard wafer, acquiring a first standard defect of the first standard wafer; When a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is a first ratio value, control the light emitting system to emit an output light to a surface of the first standard wafer, perform defect detection on the first standard wafer, and obtain a first detected defect of the first standard wafer; determining whether the first detected defect and the first standard defect match; in response to a match between the first detected defect and the first standard defect, setting the first ratio value to the first standard ratio value; adjusting the first ratio value in response to a mismatch between the first detected defect and the first standard defect, and when a ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system is the first ratio value, controlling the light emitting system to emit an emitted light to a surface of the first standard wafer, performing defect detection on the first standard wafer, and returning to obtaining a first detected defect of the first standard wafer. The method for detecting surface defects on a semiconductor wafer according to claim 1 .

3. and, in response to the first detected defect not matching the first standard defect and the first ratio value being adjusted a number of times exceeding a first preset number of times, stopping detection of the first standard wafer. The method for detecting surface defects on a semiconductor wafer according to claim 2.

4. In response to obtaining a second standard wafer including a second standard defect, determining a second standard ratio value between a reflected light intensity of the first light receiving system and a reflected light intensity of the second light receiving system after an emitted light of the light emitting system is reflected through a surface of the second standard wafer, acquiring a second standard defect of the second standard wafer; When a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is a second ratio value, control the light emitting system to emit an output light to a surface of the second standard wafer, perform defect detection on the second standard wafer, and obtain a second detected defect of the second standard wafer; determining whether the second detected defect and the second standard defect match; in response to a match between the second detected defect and the second standard defect, setting the second ratio value to the second standard ratio value; adjusting the second ratio value in response to a mismatch between the second detected defect and the second standard defect, and when a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is the second ratio value, controlling the light emitting system to emit an emitted light to a surface of the second standard wafer, performing defect detection on the second standard wafer, and returning to obtaining a second detected defect of the second standard wafer. The method for detecting surface defects on a semiconductor wafer according to claim 1 .

5. and, in response to the second detected defect not matching the second standard defect and the number of times the second ratio value is adjusted exceeding a second preset number of times, stopping detection of the second standard wafer. The method for detecting surface defects on a semiconductor wafer according to claim 4.

6. adjusting a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system to be between the first standard ratio value and the second standard ratio value to detect surface defects of a wafer to be detected; adjusting a ratio value between the reflected light intensity received at the first light receiving system and the reflected light intensity received at the second light receiving system to a detection ratio value greater than or equal to the first standard ratio value and less than or equal to the second standard ratio value; acquiring defects to be detected on the wafer to be detected, the defects including at least one of a concave defect or a convex defect; When a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is the detection ratio value, performing defect detection on the wafer to be detected to obtain a third detected defect of the wafer to be detected; determining whether the third detected defect matches the to-be-detected defect; in response to a match between the third detected defect and the defect to be detected, the detection ratio value is set to a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system when detecting another wafer to be detected, and defect detection is performed on the other wafer to be detected. in response to a mismatch between the third detected defect and the defect to be detected, adjusting the detection ratio value, and if a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system is the detection ratio value, performing defect detection on the wafer to be detected and returning to execution of obtaining a third detected defect of the wafer to be detected. The method for detecting surface defects on a semiconductor wafer according to claim 1 .

7. and stopping detection of the wafer to be detected in response to a mismatch between the third detected defect and the defect to be detected and a number of times the detection ratio value is adjusted exceeds a third preset number. The method for detecting surface defects on a semiconductor wafer according to claim 6.

8. A semiconductor wafer surface defect detection apparatus for performing detection based on an optical detection device including a light emitting system and a light receiving system including a first light receiving system and a second light receiving system, a first standard ratio value determining module configured to, in response to obtaining a first standard wafer including first standard defects including dent defects whose proportion is within a first preset range, determine a first standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after light emitted by the light emitting system is reflected through a surface of the first standard wafer; a second standard ratio value determining module configured to determine a second standard ratio value between a reflected light intensity received by the first light receiving system and a reflected light intensity received by the second light receiving system after the light emitted by the light emitting system is reflected through a surface of the second standard wafer in response to the acquisition of the second standard wafer including a second standard defect including a convex defect whose proportion is within a second preset range; and a light intensity ratio value adjustment module configured to adjust a ratio value between the reflected light intensity received by the first light receiving system and the reflected light intensity received by the second light receiving system between the first standard ratio value and the second standard ratio value to detect surface defects of a wafer to be detected. A device for detecting surface defects on semiconductor wafers.

9. A light emission system; a light receiving system; A processor configured to execute the method for detecting surface defects on a semiconductor wafer according to any one of claims 1 to 7. Optical detection instruments.

10. A computer program is stored which, when executed by a processor, realizes the semiconductor wafer surface defect detection method according to any one of claims 1 to 7. A computer-readable storage medium.

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