Semiconductor device manufacturing method

Abstract

To provide a manufacturing method for a semiconductor device that can suppress decrease in yield, while suppressing occurrence of unintentional split of a substrate.SOLUTION: A manufacturing method for semiconductor devices 1 manufactures a plurality of semiconductor devices 1 by dividing a mounted substrate 2 along vertical scribe lines 41 and lateral scribe lines 42. In a substrate 4 of the mounted substrate 2, both ends of each of the plurality of vertical scribe lines 41 and both ends of each of the plurality of lateral scribe lines 42 are separated inwardly from an outer peripheral edge 43 of the substrate 4. Dummy rows 45, partitioned by the two adjacent vertical scribe lines 41 and not mounted with semiconductor elements 3, are formed at both sides in a lateral direction D2 of a plurality of mounted surrounding regions 441 mounted with a plurality of semiconductor elements 3. Dummy rows 46, partitioned by the two adjacent lateral scribe lines 42 and not mounted with the semiconductor elements 3, are formed at both sides in a vertical direction D1 of the plurality of mounted surrounding regions 441.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a semiconductor device. [Background technology]

[0002] Patent Document 1 discloses a method for dividing a ceramic substrate into individual pieces. In the method for dividing a ceramic substrate described in Patent Document 1, dividing grooves (break lines) that serve as starting points for division are formed in a lattice pattern in the ceramic substrate, and the ceramic substrate is divided into a plurality of ceramic substrate units along the dividing grooves. Here, in the ceramic substrate before division, some of the dividing grooves are continuous dividing grooves whose both ends extend to the outer periphery of the ceramic substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2007-48975 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the ceramic substrate described in Patent Document 1, since the communicating dividing grooves are formed, there is a risk of unintended division starting from the communicating dividing grooves. For example, there is a concern that the ceramic substrate may be divided starting from the communicating dividing grooves due to shocks such as vibrations during transportation of the ceramic substrate before division.

[0005] In order to prevent the unintended division of the ceramic substrate as described above, it is conceivable to form the ends of all of the division grooves inside the outer periphery of the ceramic substrate. However, if the ceramic substrate is divided without any special ingenuity while components are mounted in all of the surrounding areas of the ceramic substrate surrounded by the division grooves, the ceramic substrate will not be divided straight along the division grooves, particularly in the vicinity of the portion near the outer periphery of the ceramic substrate where no division grooves are formed, and each divided ceramic substrate may have a distorted shape as shown in FIG. 9, which may reduce the yield.

[0006] The present invention has been made in consideration of the above-mentioned circumstances, and aims to provide a manufacturing method for a semiconductor device that can suppress unintended division of a substrate while suppressing a decrease in yield. [Means for solving the problem]

[0007] In order to achieve the above-mentioned object, the present invention provides a method for manufacturing a semiconductor device, comprising: a substrate on which a plurality of vertical scribe lines extending in a vertical direction and a plurality of horizontal scribe lines extending in a horizontal direction are formed in a lattice pattern; and a plurality of semiconductor elements mounted in a plurality of surrounding areas of the substrate surrounded by the plurality of vertical scribe lines and the plurality of horizontal scribe lines; and a method for manufacturing a semiconductor device, comprising: dividing a mounted substrate along each of the plurality of vertical scribe lines and each of the plurality of horizontal scribe lines, the substrate having both ends of each of the plurality of vertical scribe lines and both ends of each of the plurality of horizontal scribe lines being spaced inward from an outer periphery of the substrate; and on both sides of the horizontal direction of a plurality of mounting surrounding areas in which the plurality of semiconductor elements are mounted, a dummy column partitioned by two adjacent vertical scribe lines and in which the semiconductor elements are not mounted is formed, and a dummy row partitioned by two adjacent horizontal scribe lines and in which the semiconductor elements are not mounted is formed on both sides of the vertical direction of the plurality of mounting surrounding areas. Effect of the Invention

[0008] According to the present invention, it is possible to provide a manufacturing method for a semiconductor device that can suppress the occurrence of unintended division of a substrate and suppress a decrease in yield. [Brief description of the drawings]

[0009] [Figure 1] 4 is a flowchart showing a method for manufacturing a semiconductor device in the first embodiment. [Diagram 2] FIG. 2 is a plan view of a substrate on which electrodes are formed in the first embodiment. [Diagram 3] FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. [Figure 4] FIG. 2 is a plan view of a mounted board in the first embodiment. [Diagram 5] 4 is a plan view showing a state of a mounted board after a first dividing step in the first embodiment. FIG. [Figure 6] FIG. 11 is a cross-sectional view showing a first dividing step in the first embodiment, showing a state in which the blade is brought into contact with the substrate. [Figure 7] FIG. 4 is a cross-sectional view showing a first dividing step in the first embodiment, illustrating a state in which the substrate is divided by using a blade. [Figure 8] 4 is a plan view showing a state of the mounted board after a second dividing step in the first embodiment. FIG. [Figure 9] 11 is a plan view showing a mounted substrate divided by a manufacturing method of a semiconductor device according to a comparative example. FIG. [Figure 10] FIG. 11 is a plan view of a mounted board in the second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] [First embodiment] A first embodiment of the present invention will be described with reference to Figures 1 to 8. Note that the embodiment described below is shown as a preferred specific example for carrying out the present invention, and while there are some parts that specifically exemplify various technical matters that are technically preferable, the technical scope of the present invention is not limited to this specific embodiment.

[0011] (Method of Manufacturing Semiconductor Device 1) Fig. 1 is a flowchart showing a method for manufacturing a semiconductor device 1 according to the present embodiment. Fig. 2 is a plan view of a substrate 4 on which electrodes are formed in the present embodiment. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 2. Fig. 4 is a plan view of a mounted substrate 2.

[0012] The manufacturing method of the semiconductor device 1 of this embodiment is a method for manufacturing a large number of semiconductor devices 1 at once by dividing a mounted substrate 2 having a large number of semiconductor elements 3 mounted on a substrate 4 so that each of the large number of semiconductor elements 3 is separated. The manufacturing method of the semiconductor device 1 of this embodiment performs a mounted substrate preparation step S1, a first division step S2, and a second division step S3 in this order.

[0013] In the mounted substrate preparation step S1, a mounted substrate 2 is prepared. The mounted substrate 2 has a substrate 4 on which electrodes, which will be described later, are formed, and a plurality of semiconductor elements 3 connected to the electrodes of the substrate 4. The substrate 4 is a ceramic substrate made of, for example, aluminum nitride (AlN) or alumina (Al2O3). The substrate 4 may be, for example, a high temperature co-fired ceramic multilayer substrate (HTCC: High Temperature Co-fired Ceramic) or a low temperature co-fired ceramic multilayer substrate (LTCC: Low Temperature Co-fired Ceramic). The thickness of the substrate 4 may be, for example, 300 μm or more and 1000 μm or less.

[0014] As shown in Fig. 2, a plurality of vertical scribe lines 41 extending in a vertical direction D1 and a plurality of horizontal scribe lines 42 extending in a horizontal direction D2 are formed in a lattice pattern on the substrate 4. In Fig. 2, the substrate 4 is viewed from the side opposite to the side on which the vertical scribe lines 41 and the horizontal scribe lines 42 are formed, and the locations of the vertical scribe lines 41 and the horizontal scribe lines 42 are indicated by dashed lines. The vertical direction D1 and the horizontal direction D2 are directions perpendicular to the thickness direction of the substrate 4 and are mutually perpendicular. Note that the vertical direction D1 and the horizontal direction D2 may be inclined directions relative to each other as long as they intersect each other.

[0015] 3, the vertical scribe lines 41 and the horizontal scribe lines 42 have a shape cut from one side of the substrate 4 to approximately the center position in the thickness direction of the substrate 4, and are sometimes called half cuts. The vertical scribe lines 41 and the horizontal scribe lines 42 are formed by laser irradiation, cutting, etc. Hereinafter, of both sides in the thickness direction of the substrate 4, the side on which the vertical scribe lines 41 and the horizontal scribe lines 42 are not formed is referred to as the front side 4a, and the side on which the vertical scribe lines 41 and the horizontal scribe lines 42 are formed is referred to as the back side 4b. As will be described later, a semiconductor element 3 (see FIG. 4) is mounted on the front side 4a of the substrate 4.

[0016] As shown in Figures 2 and 3, both ends of the vertical scribe line 41 and the horizontal scribe line 42 are formed at a position slightly away from the outer peripheral edge 43 of the substrate 4 toward the inside of the substrate 4. In other words, the vertical scribe line 41 and the horizontal scribe line 42 are not formed to the outer peripheral edge 43 of the substrate 4. By leaving an area in which the vertical scribe line 41 and the horizontal scribe line 42 are not formed all around the outer peripheral edge 43 of the substrate 4 in this manner, it is possible to prevent the substrate 4 from being unintentionally divided due to vibrations that occur during transportation of the substrate 4, for example. In this embodiment, the length L (see Figure 2) of each of the vertical scribe line 41 and the horizontal scribe line 42 to the outer peripheral edge 43 of the substrate 4 is greater than the thickness T (see Figure 3) of the substrate 4.

[0017] 2, the substrate 4 has a plurality of surrounding regions 44 surrounded by a plurality of vertical scribe lines 41 and a plurality of horizontal scribe lines 42. In FIG. 4, the surrounding regions 44 are formed at 49 locations in total, 7 locations in the vertical direction D1 and 7 locations in the horizontal direction D2, but the number of surrounding regions 44 is not limited to this. Of the plurality of surrounding regions 44, the remaining regions other than the surrounding region 44 formed on the outermost periphery serve as mounting surrounding regions 441 in which the semiconductor element 3 is mounted.

[0018] 2, on the substrate 4, dummy columns 45 are formed on both sides of the multiple mounting surrounding areas 441 in the horizontal direction D2. The dummy columns 45 are defined by two adjacent vertical scribe lines 41 and are portions of the substrate 4 on which no semiconductor element 3 is mounted. Also, on the substrate 4, one dummy row 46 is formed on each side of the multiple mounting surrounding areas 441 in the vertical direction D1. The dummy rows 46 are defined by two adjacent horizontal scribe lines 42 and are portions of the substrate 4 on which no semiconductor element 3 is mounted.

[0019] Here, an area on the substrate 4 that is partitioned by adjacent vertical scribe lines 41 is referred to as a partition column 47, and an area on the substrate 4 that is partitioned by adjacent horizontal scribe lines 42 is referred to as a partition row 48. The dummy column 45 is one type of partition column 47, and the dummy row 46 is one type of partition row 48. The partition columns 47 other than the dummy column 45 are referred to as inner partition columns 471, and the partition rows 48 other than the dummy row 46 are referred to as inner partition rows 481. In this embodiment, all the vertical scribe lines 41 are formed at equal intervals in the horizontal direction D2, and therefore, all the partition columns 47 have a constant width. In this embodiment, all the horizontal scribe lines 42 are formed at equal intervals in the vertical direction D1, and therefore, all the partition rows 48 have a constant width. That is, in this embodiment, the width Wc of the dummy column 45 is equal to the width W1 of the inner partition column 471, and the width Wr of the dummy row 46 is equal to the width W2 of the inner partition row 481. The widths of the partition columns 47 are constant, not limited to the case where the widths of the partition columns 47 are completely the same, but for example, the value obtained by subtracting the maximum from the minimum of the widths of the partition columns 47 is 2% or less of the width of the maximum partition column 47. Similarly, the widths of the partition rows 48 are constant, not limited to the case where the widths of the partition rows 48 are completely the same, but for example, the value obtained by subtracting the maximum from the minimum of the widths of the partition rows 48 is 2% or less of the width of the maximum partition row 48. In this embodiment, the widths Wc, Wr, W1, and W2 are equal to each other. The width of each of all the compartment rows 47 including the dummy rows 45, and each of all the compartment rows 47 including the dummy rows 45, is greater than the thickness T of the substrate 4 (see FIG. 3).

[0020] 2 and 3, an anode electrode 51 and a cathode electrode 52 electrically connected to the semiconductor element 3 are provided on the front surface 4a of the mounting surrounding area 441. In addition, as shown in Fig. 3, an anode back surface electrode 53 electrically connected to the anode electrode 51 through the substrate 4, and a cathode back surface electrode 54 electrically connected to the cathode electrode 52 through the substrate 4 are formed on the back surface 4b of the mounting surrounding area 441.

[0021] 4, the semiconductor element 3 is electrically connected to the anode electrode 51 and the cathode electrode 52. The semiconductor element 3 is connected to the anode electrode 51 and the cathode electrode 52 via bumps, for example.

[0022] The semiconductor element 3 may be a light-emitting element that emits visible light such as red, blue, green, or white light, or a light-emitting element that emits ultraviolet light. In this case, the semiconductor device 1 (see FIG. 8 described later) manufactured is a light-emitting diode (LED). In this embodiment, the semiconductor device 1 manufactured is a CoS (Chip on Submount) type light-emitting diode in which the semiconductor element 3 is flip-chip mounted on a submount (see reference numeral 40 in FIG. 8 described later). The semiconductor device 1 manufactured is not limited to the above, and may be, for example, a light-emitting device such as a semiconductor laser (LD: Laser Diode) or a semiconductor device other than a light-emitting device.

[0023] The mounted substrate 2 having the above-mentioned configuration is prepared in the mounted substrate preparation step S1. In the mounted substrate preparation step S1, the mounted substrate 2 may be manufactured by, for example, performing a step of forming electrodes on the substrate 4, a step of forming vertical scribe lines 41 and horizontal scribe lines 42 on the substrate 4, and a step of mounting the semiconductor element 3 on the substrate 4. In this case, the mounted substrate 2 may be manufactured by, for example, performing a step of forming electrodes on the substrate 4, a step of forming vertical scribe lines 41 and horizontal scribe lines 42 on the substrate 4, and a step of mounting the semiconductor element 3 on the substrate 4 in this order. Alternatively, the mounted substrate 2 may be manufactured by performing a step of forming electrodes on the substrate 4, a step of mounting the semiconductor element 3 on the substrate 4, and a step of forming vertical scribe lines 41 and horizontal scribe lines 42 on the substrate 4 in this order. In addition, in the mounted substrate preparation step S1, the substrate 4 on which the electrodes, the vertical scribe lines 41, and the horizontal scribe lines 42 are formed (as shown in FIG. 2) may be purchased, and the semiconductor element 3 may be mounted on the substrate 4 to manufacture the mounted substrate 2 as shown in FIG. 4. Alternatively, in the mounted substrate preparation process S1, a substrate 4 having electrodes formed thereon may be purchased, and vertical scribe lines 41 and horizontal scribe lines 42 may be formed on the substrate 4, and a semiconductor element 3 may be mounted thereon to produce a mounted substrate 2 as shown in FIG.

[0024] As shown in Fig. 1, following the mounted substrate preparation step S1, a first division step S2 is performed. Fig. 5 is a plan view showing a state after the mounted substrate 2 shown in Fig. 4 has been divided in the first division step S2. The first division step S2 is a step of dividing the substrate 4 along non-division scribe lines 491 that do not divide the mounting surrounding area 441, among the multiple vertical scribe lines 41 and the multiple horizontal scribe lines 42, as shown in Figs. 4 and 5.

[0025] FIG. 6 is a cross-sectional view showing the first division step S2, and is a cross-sectional view showing a state in which the blade 6 is brought into contact with the substrate 4. FIG. 7 is a cross-sectional view showing the first division step S2, and is a cross-sectional view showing a state in which the substrate 4 is divided using the blade 6. In the first division step S2, the mounted substrate 2 is divided (broken) along the non-partition scribe lines 491 using the blade 6. The cutting edge 61 of the blade 6 is longer than both the entire length of the substrate 4 in the vertical direction D1 and the entire length of the substrate 4 in the horizontal direction D2. That is, in FIG. 6 and FIG. 7, the cutting edge 61 of the blade 6 is formed long in the depth direction of the paper.

[0026] In the first division step S2, the cutting edge 61 of the blade 6 is oriented parallel to one of the non-division scribe lines 491, and is pressed against the substrate 4 at a position on the front surface 4a of the substrate 4 that overlaps the one non-division scribe line 491 in the vertical direction. As a result, the substrate 4 is divided by folding the substrate 4 starting from the non-division scribe line 491. In the same manner, the substrate 4 is divided along all (four) of the non-division scribe lines 491. In the first division step S2 and the second division step S3, the rear surface 4b side of the mounted substrate 2 is attached to, for example, an elastically deformable adhesive sheet, so that each part of the substrate 4 does not fly off immediately after the substrate 4 is divided. Hereinafter, the part of the substrate 4 after the first division step S2 that includes the mounting surrounding area 441 is referred to as the substrate 400.

[0027] As shown in FIG. 1, the first division step S2 is followed by the second division step S3. FIG. 8 is a plan view showing the state of the mounted substrate 2 after the second division step S3. As shown in FIG. 5 and FIG. 8, the second division step S3 is a step of dividing the mounted substrate 2 along the partition scribe lines 492 dividing the mounting surrounding area 441 among the vertical scribe lines 41 and the horizontal scribe lines 42. In the second division step S3, the mounted substrate 2 is divided along the partition scribe lines 492 using the blade 6, as in the first division step S2. As shown in FIG. 5, in the state after the first division step S2, the vertical scribe lines 41 and the horizontal scribe lines 42 are formed up to the outer periphery 431 of the substrate 400, so that in the second division step S3, the substrate 400 can be divided accurately along the partition scribe lines 492.

[0028] As a result of the above, as shown in FIG. 8, the substrate 4 is divided into a plurality of submounts 40, and a plurality of (5×5=25 in this embodiment) semiconductor devices 1 are manufactured.

[0029] (Functions and Effects of the First Embodiment) In the substrate 4 of the mounted substrate 2, both ends of each of the multiple vertical scribe lines 41 and both ends of each of the multiple horizontal scribe lines 42 are spaced inward from the outer periphery 43 of the substrate 4. That is, both ends of each of the multiple vertical scribe lines 41 and each of the multiple horizontal scribe lines 42 are not formed to the outer periphery 43 of the substrate 4. This makes it possible to prevent the substrate 4 from being excessively susceptible to cracking. This makes it possible to prevent the substrate 4 from being unintentionally split due to vibrations or the like that occur during transportation of the substrate 4.

[0030] Here, when both ends of each of the multiple vertical scribe lines 41 and both ends of each of the multiple horizontal scribe lines 42 are spaced inward from the outer periphery 43 of the substrate 4, the yield of the manufactured semiconductor device 1 may decrease unless some special measures are taken. This will be described with reference to a comparative example.

[0031] FIG. 9 shows a mounted substrate 92 divided by the manufacturing method of a semiconductor device according to a comparative embodiment. In the comparative embodiment, the divided mounted substrate 92 has a semiconductor element 93 mounted in the outermost surrounding region 944a among the multiple surrounding regions 944 of the substrate 94. That is, in the comparative embodiment, the mounted substrate 92 does not have a dummy column or a dummy row. In such a case, when the substrate 94 is divided along the vertical scribe line 941 and the horizontal scribe line 942, the substrate 94 may not be divided straight along the vertical scribe line 941 or the horizontal scribe line 942, particularly in the vicinity of the portion of the outer periphery of the substrate 94 where the vertical scribe line 941 and the horizontal scribe line 942 are not present, and the divided substrate 94 may have a distorted shape. Then, there is a risk that the distorted crack 900 will progress to the outermost surrounding region 944a. In this case, it is considered that the substrate 94 of the semiconductor device 91 having the outermost surrounding region 944a is not of the desired shape and cannot be used as a product. As an example, in a case where the arrangement space for semiconductor devices is limited, such as when a large number of semiconductor devices are arranged at high density, if the shape of substrate 94 is distorted from the desired shape, it may be impossible to arrange semiconductor device 91 in the limited arrangement space, and as a result, semiconductor device 91 may not be usable as a product. Also, if crack 900 is formed close to semiconductor element 93, it may be impossible to efficiently extract light emitted from semiconductor element 93 to the outside, and as a result, it may be impossible to use semiconductor element 91 as a product.

[0032] Therefore, in the substrate 4 of the mounted substrate 2 used in the manufacturing method of the semiconductor device 1 of the present embodiment, dummy columns 45 are formed on both sides of the multiple mounting surrounding areas 441 in the horizontal direction D2, and dummy rows 46 are formed on both sides of the multiple mounting surrounding areas 441 in the vertical direction D1. Therefore, even if a deformed crack occurs near the outer periphery 43 of the substrate 4, the progress of the deformed crack is stopped in the dummy columns 45 or dummy rows 46, and the progress to the mounting surrounding area 441 is suppressed. Therefore, according to the present embodiment, it is possible to suppress the manufacturing of a semiconductor device 1 that cannot be used, and it is possible to improve the yield.

[0033] In addition, in the substrate 4 of the mounted substrate 2, all the partition columns 47 are formed with a constant width, and all the partition rows 48 are formed with a constant width. Therefore, the vertical scribe lines 41 are formed with a constant pitch, and the horizontal scribe lines 42 are formed with a constant pitch. Here, when forming the vertical scribe lines 41 and the horizontal scribe lines 42 on the substrate 4, it is necessary to set the pitch of the vertical scribe lines 41 and the pitch of the horizontal scribe lines 42 in an apparatus (a laser apparatus in this embodiment) for forming the vertical scribe lines 41 and the horizontal scribe lines 42. By making the pitch of the vertical scribe lines 41 and the pitch of the horizontal scribe lines 42 constant, it is possible to prevent such setting work from becoming difficult. In addition, when dividing the substrate 4, it is necessary to set the pitch of the vertical scribe lines 41 and the pitch of the horizontal scribe lines 42 in an apparatus for dividing the substrate 4, but it is also possible to prevent such setting work from becoming difficult.

[0034] Moreover, in the substrate 4 of the mounted substrate 2, the width of each of the dummy columns 45 and the dummy rows 46 is greater than the thickness of the substrate 4. Therefore, the above-mentioned distorted crack (see reference numeral 900 in FIG. 9) is further suppressed from progressing through the dummy columns 45 or the dummy rows 46, and the yield can be further improved. In addition, in the state after the first division step S2 (i.e., the state shown in FIG. 5), the dummy columns 45 or the dummy rows 46 can be prevented from becoming excessively small, so that the work of dividing the substrate 4 at the vertical scribe lines 41 dividing the dummy columns 45 and the horizontal scribe lines 42 dividing the dummy rows 46 in the second division step S3 can be easily performed. In other words, if the distance between the vertical scribe lines 41 or the horizontal scribe lines 42, which are the division positions of the substrate 4, and the outer periphery of the substrate 4 is too close, it becomes difficult to divide the substrate 4, but this embodiment can prevent such a situation from occurring.

[0035] In addition, in the process of dividing the mounted substrate 2, a first division step S2 is performed to divide the mounted substrate 2 along non-division scribe lines 491 that do not divide the mounting surrounding area 441 among the multiple vertical scribe lines 41 and multiple horizontal scribe lines 42, and then a second division step S3 is performed to divide the mounted substrate 2 along division scribe lines 492 that divide the mounting surrounding area 441 among the multiple vertical scribe lines 41 and multiple horizontal scribe lines 42. As a result, in the state after the first division step S2, the division scribe lines 492 are formed up to the outer circumferential edge 43 of the substrate 4, so that in the second division step S3, the substrate 4 can be divided easily accurately (i.e., while suppressing the occurrence of distorted cracks) along the division scribe lines 492.

[0036] As described above, according to the present embodiment, it is possible to provide a manufacturing method for a semiconductor device that can suppress unintended division of a substrate and also suppress a decrease in yield.

[0037] [Second embodiment] 10 is a plan view of the mounted board 2 prepared in the mounted board preparation process S1 in the second embodiment. This embodiment is basically the same as the first embodiment, but is an embodiment in which the configuration of the board 4 in the mounted board 2 prepared in the mounted board preparation process S1 is changed. Specifically, in this embodiment, the board 4 of the mounted board 2 has a width Wc of the dummy column 45 smaller than the width W1 of each of the inner section columns 471, and a width Wr of the dummy row 46 smaller than the width W2 of each of the inner section rows 481. The width Wc of the dummy column 45 is half or less (approximately half in this embodiment) of the width W1 of each of the inner section columns 471, and the width Wr of the dummy row 46 is half or less (approximately half in this embodiment) of the width W2 of each of the inner section rows 481.

[0038] The rest is similar to the first embodiment. In addition, among the symbols used in the second and subsequent embodiments, the same symbols as those used in the previously described embodiments represent the same components, etc. as those in the previously described embodiments, unless otherwise specified.

[0039] (Functions and Effects of the Second Embodiment) In this embodiment, the width Wc of the dummy column 45 is smaller than the width W1 of each of the inner section columns 471, and the width Wr of the dummy row 46 is smaller than the width W2 of each of the inner section rows 481. This makes it possible to increase the ratio of the number of semiconductor devices 1 to be manufactured relative to the size of the substrate 4 in a plan view. Therefore, even when the substrate 4 is provided with the dummy column 45 and the dummy row 46, it is possible to manufacture a larger number of semiconductor devices 1. In addition, the second embodiment has the same functions and effects as the first embodiment.

[0040] (Summary of the embodiment) Although the embodiment of the present invention has been described above, the invention according to the claims is not limited to the above embodiment. It should be noted that not all of the combinations of features described in the embodiment are essential to the means for solving the problems of the invention. The present invention can be modified appropriately without departing from the spirit of the invention.

[0041] (Embodiments of the invention) Next, the embodiments of the present invention that can be understood from the above-described embodiment will be described by using the reference numerals and the like in the embodiment. However, the reference numerals and the like in the following description do not limit the components in the claims to the members and the like specifically shown in the embodiment.

[0042] [1] A first embodiment of the present invention is a method for manufacturing a semiconductor device 1, comprising: a substrate 4 on which a plurality of vertical scribe lines 41 extending in a vertical direction D1 and a plurality of horizontal scribe lines 42 extending in a horizontal direction D2 are formed in a lattice pattern; and a plurality of semiconductor elements 3 mounted in a plurality of surrounding regions 44 of the substrate 4 surrounded by the plurality of vertical scribe lines 41 and the plurality of horizontal scribe lines 42, and dividing the substrate 4 of the substrate 4 along each of the plurality of vertical scribe lines 41 and each of the plurality of horizontal scribe lines 42 to manufacture a plurality of semiconductor devices 1. and each end of the plurality of horizontal scribe lines 42 are spaced inward from an outer peripheral edge 43 of the substrate 4, and dummy columns 45 are formed on both sides of the horizontal direction D2 of a plurality of mounting surrounding areas 441 among the plurality of surrounding areas 44 in which the plurality of semiconductor elements 3 are mounted, the dummy columns 45 being partitioned by two adjacent vertical scribe lines 41 and having no semiconductor element 3 mounted thereon, and dummy rows 46 are formed on both sides of the vertical direction D1 of the plurality of mounting surrounding areas 441 being partitioned by two adjacent horizontal scribe lines 42 and having no semiconductor element 3 mounted thereon. This makes it possible to prevent unintended division of the substrate 4 and to prevent a decrease in yield during the manufacture of the semiconductor device 1.

[0043] [2] A second embodiment of the present invention is a manufacturing method of a semiconductor device 1 according to the first embodiment, in which, in the process of dividing the mounted substrate 2, the mounted substrate 2 is divided along non-partition scribe lines 491 among the plurality of vertical scribe lines 41 and the plurality of horizontal scribe lines 42 which do not divide the mounting surrounding area 441, and then the mounted substrate 2 is divided along partition scribe lines 492 among the plurality of vertical scribe lines 41 and the plurality of horizontal scribe lines 42 which divide the mounting surrounding area 441. This makes it easier to divide the substrate 4 accurately along the partition scribe lines 492 when dividing the mounted substrate 2 along the partition scribe lines 492 .

[0044] [3] A third embodiment of the present invention is a method for manufacturing a semiconductor device 1 according to the first or second embodiment, in which when the areas defined by adjacent vertical scribe lines 41 on the substrate 4 of the mounted substrate 2 are defined as partition columns 47 and the areas defined by adjacent horizontal scribe lines 42 are defined as partition rows 48, all of the partition columns 47 are formed with a constant width and all of the partition rows 48 are formed with a constant width. This prevents the task of setting the pitch of the multiple vertical scribe lines 41 and the pitch of the horizontal scribe lines 42 in an apparatus for forming multiple vertical scribe lines 41 and multiple horizontal scribe lines 42 on the substrate 4, and in an apparatus for dividing the substrate 4, from becoming difficult.

[0045] [4] A fourth embodiment of the present invention is a method for manufacturing a semiconductor device 1 according to the first or second embodiment, in which when an area defined by adjacent vertical scribe lines 41 on the substrate 4 of the mounted substrate 2 is defined as a partition column 47, an area defined by adjacent horizontal scribe lines 42 is defined as a partition row 48, a partition column 47 excluding the dummy column 45 among the plurality of partition columns 47 is defined as an inner partition column 471, and a partition row 48 excluding the dummy row among the plurality of partition rows 48 is defined as an inner partition row 481, a width Wc of the dummy column 45 is smaller than a width W1 of each of the plurality of inner partition columns 471, and a width Wr of the dummy row 46 is smaller than a width W2 of each of the plurality of inner partition rows 481. This makes it possible to manufacture a larger number of semiconductor devices 1 even when the substrate 4 is provided with the dummy columns 45 and the dummy rows 46.

[0046] [5] A fifth embodiment of the present invention is a method for manufacturing a semiconductor device 1 according to any one of the first to fourth embodiments, wherein the widths Wc, Wr of the dummy column 45 and the dummy row 46 in the substrate 4 of the mounted substrate 2 are greater than the thickness of the substrate 4. This makes it possible to further improve the yield when manufacturing the semiconductor device 1.

[0047] (Additional Note) Although the embodiment of the present invention has been described above, the invention according to the claims is not limited to the above embodiment. It should be noted that not all of the combinations of features described in the embodiment are essential to the means for solving the problems of the invention. The present invention can be modified appropriately without departing from the spirit of the invention.

[0048] For example, in the first and second embodiments, an example is shown in which the substrate 4 of the mounted substrate 2 has one dummy column 45 on each side of the multiple mounting surrounding areas 441 in the horizontal direction D2 and one dummy row 46 on each side of the multiple mounting surrounding areas 441 in the vertical direction D1, but it is also possible that multiple dummy columns 45 are provided on each side of the multiple mounting surrounding areas 441 in the horizontal direction D2 and multiple dummy rows 46 are provided on each side of the multiple mounting surrounding areas 441 in the vertical direction D1. [Explanation of symbols]

[0049] 1...Semiconductor device 2...Mounted board 3. Semiconductor element 4...Substrate 41…Vertical scribe line 42…Horizontal scribe line 43…Outer edge 44…Encircled Area 441…Implementation Enclosure Area 45…Dummy column 46…Dummy row 47…Division Row 471…Inner compartment row 48…Division row 481…Inner compartment row 491...Non-partition scribe line 492…Division scribe line D1: Vertical direction D2…horizontal direction

Claims

1. A method for manufacturing a semiconductor device, comprising: dividing a mounted substrate, the substrate comprising a substrate on which a plurality of vertical scribe lines extending in a vertical direction and a plurality of horizontal scribe lines extending in a horizontal direction are formed in a lattice pattern, and a plurality of semiconductor elements mounted in a plurality of surrounding regions of the substrate surrounded by the plurality of vertical scribe lines and the plurality of horizontal scribe lines, along each of the plurality of vertical scribe lines and each of the plurality of horizontal scribe lines, to manufacture a plurality of semiconductor devices, the method comprising the steps of: The substrate of the mounted substrate is both ends of each of the plurality of vertical scribe lines and both ends of each of the plurality of horizontal scribe lines are spaced inward from an outer circumferential edge of the substrate; a dummy column is formed on both sides in the horizontal direction of a plurality of mounting surrounding areas in which the plurality of semiconductor elements are mounted among the plurality of surrounding areas, the dummy column being defined by two adjacent vertical scribe lines and having no semiconductor elements mounted thereon, and a dummy row is formed on both sides in the vertical direction of the plurality of mounting surrounding areas, the dummy column being defined by two adjacent horizontal scribe lines and having no semiconductor elements mounted thereon; A method for manufacturing a semiconductor device.

2. In the step of dividing the mounted substrate, the mounted substrate is divided along non-partition scribe lines that do not divide the mounting surrounding area among the plurality of vertical scribe lines and the plurality of horizontal scribe lines, and then the mounted substrate is divided along partition scribe lines that divide the mounting surrounding area among the plurality of vertical scribe lines and the plurality of horizontal scribe lines. The method for manufacturing a semiconductor device according to claim 1 .

3. when regions defined by adjacent vertical scribe lines in the substrate of the mounted substrate are defined as partition columns and regions defined by adjacent horizontal scribe lines are defined as partition rows, all of the partition columns are formed with a constant width, and all of the partition rows are formed with a constant width. The method for manufacturing a semiconductor device according to claim 1 or 2.

4. In the substrate of the mounted substrate, when an area defined by adjacent vertical scribe lines is defined as a partition column, an area defined by adjacent horizontal scribe lines is defined as a partition row, a partition column excluding the dummy column among the plurality of partition columns is defined as an inner partition column, and a partition row excluding the dummy row among the plurality of partition rows is defined as an inner partition row, a width of the dummy row is smaller than a width of each of the inner section rows; a width of the dummy row is smaller than a width of each of the inner partition rows; The method for manufacturing a semiconductor device according to claim 1 or 2.

5. In the substrate of the mounted substrate, the width of each of the dummy columns and the dummy rows is greater than the thickness of the substrate. The method for manufacturing a semiconductor device according to claim 1 .

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