Semiconductor Device

Abstract

To suppress the occurrence of oscillation and noise in voltage and current in a semiconductor device.SOLUTION: A semiconductor device includes: a plurality of circuit portion; an AC output terminal that outputs an AC voltage; a first connection portion formed of a plate-shaped conductive material and connected to any of the circuit portions; and a second connection portion formed of the plate-shaped conductive material and connected to any of the circuit portions and the AC output terminal. The first connection portion and the second connection portion are arranged with their respective principal surfaces facing each other. Each of the first connection portion and the second connection portion includes: a circuit connection end portion connected to the circuit portion; and a path regulation portion that regulates the current path on the principal surface. The direction of the current flowing through the current path between the path regulation portion and the circuit connection end portion is different in the first connection portion and the second connection portion.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art Conventionally, semiconductor devices have been known that have a plurality of semiconductor chips, each of which passes a current (see, for example, Patent Documents 1 and 2). Patent Document 1: WO2014 / 122877 Patent Document 2: WO2014 / 192118 Summary of the Invention [Problem to be solved by the invention]

[0003] In a semiconductor device, it is preferable to be able to suppress the occurrence of oscillation and noise in voltage and current. [Means for solving the problem]

[0004] In a first aspect of the present invention, there is provided a semiconductor device comprising: a plurality of circuit parts; an AC output terminal for outputting an AC voltage; a first connection part formed of a plate-shaped conductive material and connected to any of the circuit parts; and a second connection part formed of a plate-shaped conductive material and connected to any of the circuit parts and the AC output terminal. In the above semiconductor device, the first connection part and the second connection part may be arranged with their respective main surfaces facing each other. In any of the above semiconductor devices, each of the first connection part and the second connection part may have a circuit connection end part connected to the circuit parts and a path regulation part that regulates a current path on the main surface. In any of the above semiconductor devices, the direction of a current flowing through the current path between the path regulation part and the circuit connection end part may be different between the first connection part and the second connection part.

[0005] In a second aspect of the present invention, there is provided a semiconductor device including a plurality of circuit parts, and a first connection part, a second connection part, and a third connection part formed of a plate-shaped conductive material and connected to any of the circuit parts. In the semiconductor device, the first connection part, the second connection part, and the third connection part may be arranged with their respective main surfaces facing each other. In any of the semiconductor devices, the first connection part may be arranged facing the first main surface of the second connection part, and the third connection part may be arranged facing the first main surface of the second connection part. In any of the semiconductor devices, the first connection part, the second connection part, and the third connection part may each have a circuit connection end part connected to the circuit parts and a path regulation part that regulates a current path on the main surface. In any of the semiconductor devices, the first connection part may have a fourth external connection terminal to which a negative terminal of an external power supply is connected, the second connection part may have an AC output terminal that outputs AC, and the third connection part may have a first external connection terminal to which a positive terminal of the external power supply is connected. In any of the above semiconductor devices, the direction of the current flowing through the current path between the path regulation portion and the circuit connection end may be different between the first connection portion and the second connection portion, and may be different between the third connection portion and the second connection portion.

[0006] In any of the above semiconductor devices, the second connection portion may have an edge slit provided from the circuit side edge on which the circuit connection end portion is provided toward the inside of the second connection portion, a first internal slit provided connected to the edge slit and extending along the circuit side edge, and a second internal slit provided connected to the edge slit and extending along the circuit side edge and to the opposite side from the first internal slit. In any of the above semiconductor devices, the first connection portion and the third connection portion may be arranged side by side in a direction parallel to the main surface of the second connection portion. In any of the above semiconductor devices, the first connection portion may have a first parallel slit extending from an edge facing the third connection portion in a direction parallel to the first internal slit, and the third connection portion may have a second parallel slit extending from an edge facing the first connection portion in a direction parallel to the second internal slit. Semiconductor device.

[0007] In a third aspect of the present invention, there is provided a semiconductor device including a plurality of circuit parts, and a first connection part, a second connection part, and a fourth connection part formed of a plate-shaped conductive material and connected to any of the circuit parts. In the semiconductor device, the first connection part, the second connection part, and the fourth connection part may be arranged with their respective main surfaces facing each other. In any of the semiconductor devices, the first connection part may be arranged facing the first main surface of the second connection part, and the fourth connection part may be arranged facing the second main surface of the second connection part. In any of the semiconductor devices, the first connection part, the second connection part, and the fourth connection part may each have a circuit connection end part connected to the circuit parts, and a path regulation part that regulates a current path on the main surface. In any of the semiconductor devices, the first connection part and the fourth connection part may be connected to an external power source. In any of the semiconductor devices, the direction of the current flowing through the current path between the path regulation part and the circuit connection end may be different between the first connection part and the second connection part, and may be different between the fourth connection part and the second connection part.

[0008] In any of the above semiconductor devices, the path regulators of the first connection portion, the second connection portion, and the fourth connection portion may have one or more first slits extending in a first direction. In any of the above semiconductor devices, a current flowing in the first connection portion and a current flowing in the fourth connection portion may flow in the second connection portion. In any of the above semiconductor devices, a width of the first slit in the second connection portion may be larger than both a width of the first slit in the first connection portion and a width of the first slit in the fourth connection portion.

[0009] In a fourth aspect of the present invention, there is provided a semiconductor device including a plurality of circuit parts, and a first connection part, a second connection part, a third connection part, a fourth connection part, and an inter-block connection part, each of which is formed of a plate-shaped conductive material and connected to any of the circuit parts. In the above semiconductor device, each of the first connection part, the second connection part, the third connection part, and the fourth connection part and the inter-block connection part may be arranged with their respective main surfaces facing each other, the first connection part and the second connection part may be arranged with their respective main surfaces facing each other, and the third connection part and the fourth connection part may be arranged with their respective main surfaces facing each other. In any of the above semiconductor devices, each of the first connection part, the second connection part, the third connection part, the fourth connection part, and the inter-block connection part may have a circuit connection end part connected to the circuit parts, and a path regulation part that regulates a current path on the main surface. In any of the above semiconductor devices, the direction of the current flowing through the current path between the path regulation portion and the circuit connection end may be different between the first connection portion, the second connection portion, the third connection portion, and the fourth connection portion and between the block connection portion.

[0010] In any of the semiconductor devices described above, the first connection portion, the second connection portion, the third connection portion and the fourth connection portion may be connected to an external power supply.

[0011] In any of the above semiconductor devices, the first connection portion, the second connection portion, the third connection portion, the fourth connection portion, and the path regulator of the inter-block connection portion may have one or more first slits extending in a first direction. In any of the above semiconductor devices, a current flowing in the first connection portion, a current flowing in the second connection portion, a current flowing in the third connection portion, and a current flowing in the fourth connection portion may flow in the inter-block connection portion. In any of the above semiconductor devices, a width of the first slit in the inter-block connection portion may be larger than any of a width of the first slit in the first connection portion, a width of the first slit in the second connection portion, a width of the first slit in the third connection portion, and a width of the first slit in the fourth connection portion.

[0012] In any of the above semiconductor devices, a direction of a current flowing through the current path between the path regulation portion and the circuit connection end portion may be opposite in the first connection portion and the second connection portion. In any of the above semiconductor devices, the circuit connection end portion and the path regulation portion are arranged in each of the first connection portion and the second connection portion such that at least a part of the current flows around the path regulation portion, and a direction of the current flowing around the path regulation portion may be opposite in the first connection portion and the second connection portion.

[0013] In any of the above semiconductor devices, the first connection portion and the second connection portion may be arranged with their respective main surfaces parallel to each other. In any of the above semiconductor devices, the first connection portion and the second connection portion may be arranged with their respective main surfaces parallel to each other, the first connection portion and the second connection portion may have an overlapping region in which they overlap in a direction perpendicular to the main surfaces, the path regulators of the first connection portion and the second connection portion may have one or more first slits extending in a first direction, and in the overlapping region, the number of the first slits provided in the first connection portion may be the same as the number of the first slits provided in the second connection portion.

[0014] In any of the above semiconductor devices, the path regulators of the first connection portion and the second connection portion may have one or more second slits extending in a second direction different from the first direction, and in the overlapping region, the number of the second slits provided in the first connection portion may be the same as the number of the second slits provided in the second connection portion. In any of the above semiconductor devices, an upper end of the first connection portion and an upper end of the second connection portion may be disposed at the same height, and in the overlapping region, the first slits provided in the first connection portion and the first slits provided in the second connection portion may be disposed at the same height.

[0015] In any of the above semiconductor devices, an upper end of the first connection portion may be disposed at a higher position than an upper end of the second connection portion, and in the overlapping region, the first slit provided in the first connection portion may be disposed at a higher position than the first slit provided in the second connection portion. In any of the above semiconductor devices, a width of the first slit in the first connection portion and a width of the first slit in the second connection portion may be different.

[0016] In any of the above semiconductor devices, a thickness of the first connection portion may be greater than a thickness of the second connection portion, and a width of the first slit in the first connection portion may be greater than a width of the first slit in the second connection portion. In any of the above semiconductor devices, a current flowing in the first connection portion may be greater than a current flowing in the second connection portion, and a width of the first slit in the first connection portion may be greater than a width of the first slit in the second connection portion.

[0017] In any of the above semiconductor devices, the first connection portion may be connected to either a positive terminal or a negative terminal of an external power supply. In any of the above semiconductor devices, the second connection portion may be connected to neither the positive terminal nor the negative terminal.

[0018] In any of the above semiconductor devices, the first connection portion and the second connection portion may have an overlapping region in a direction perpendicular to the main surface, and a current flowing through the overlapping region of the first connection portion and the second connection portion may be a current flowing between the positive terminal and the AC output terminal, or a current flowing between the AC output terminal and the negative terminal.

[0019] The above summary of the invention does not list all of the features of the present invention. Also, subcombinations of these features may also be inventions. [Brief description of the drawings]

[0020] [Figure 1] 1 shows an example of a perspective view of a semiconductor device 100 according to an embodiment of the present invention. [Diagram 2] 1 is an example of a plan view of a semiconductor device 100. FIG. [Diagram 3] 2 is a diagram showing an example of a circuit configuration in an internal circuit of the semiconductor device 100. FIG. [Figure 4A] 1 is a diagram for explaining an overview of each circuit block CB. FIG. [Figure 4B] 2 is a diagram showing an example of first circuit portions 211 arranged along a first direction. FIG. [Figure 4C] 13 is a diagram showing another example of first circuit portions 211 arranged along the first direction. FIG. [Figure 4D] 13 is a diagram showing another example of first circuit portions 211 arranged along the first direction. FIG. [Diagram 5] 2A to 2C are diagrams showing examples of the shapes of an inter-block connection portion 202, a first block internal connection portion 204, and a second block internal connection portion 206. [Figure 6] 11A and 11B are diagrams illustrating the positions of slits in each connection portion. [Figure 7] 13A to 13C are diagrams showing other examples of the arrangement of slits in each connection portion. [Figure 8] 13A and 13B are diagrams showing examples of the shape of a connecting portion 209 in a fourth block. [Figure 9] 13A and 13B are diagrams showing examples of the shape of a connecting portion 208 in a third block. [Figure 10] 10 is a diagram illustrating the resistance of an inter-block connection 202 and an intra-block connection between the respective circuit portions. [Figure 11] FIG. 13 is a diagram illustrating another example of the inter-block connector 202. [Figure 12] 1 is a diagram showing an example of a connection portion 371 and a connection portion 471 provided opposite to each other in the semiconductor device 100. FIG. [Figure 13] 13 is a diagram showing an example of a connection portion 571. FIG. [Figure 14] 13A and 13B are diagrams illustrating other exemplary arrangements of a plurality of connection parts. [Figure 15] 15A and 15B are diagrams illustrating examples of the arrangement of slits in each connection portion illustrated in FIG. 14. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] The present invention will be described below through embodiments of the invention, but the following embodiments do not limit the scope of the invention according to the claims. Furthermore, not all of the combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0022] In this specification, one side in a direction parallel to the depth direction of a semiconductor substrate of a semiconductor chip is referred to as "upper" and the other side as "lower." Of the two main surfaces of a substrate, layer or other member, one surface is referred to as the upper surface and the other surface is referred to as the lower surface. The directions of "upper," "lower," "front" and "back" are not limited to the direction of gravity or the direction of attachment to a substrate or the like when mounting a semiconductor device.

[0023] In this specification, technical matters may be explained using orthogonal coordinate axes of X, Y, and Z. In this specification, a plane parallel to the top surface of the semiconductor chip is defined as the XY plane, and an axis perpendicular to the XY plane is defined as the Z axis.

[0024] In addition, in this specification, the distance, resistance value, magnitude of current, etc. may be described as being equal. The case where these are equal is not limited to the case where they are completely identical, but may be different within the scope of the invention described in this specification. For example, the term "equal" allows an error of 10% or less.

[0025] 1 shows an example of a perspective view of a semiconductor device 100 according to an embodiment of the present invention. The semiconductor device 100 includes a case portion 110, a base portion 120, and a plurality of terminals. In one example, the semiconductor device 100 is used in a power conditioner (PCS: Power Conditioning Subsystem).

[0026] The case part 110 houses an internal circuit such as a semiconductor chip and wiring. The case part 110 is molded from an insulating resin. The case part 110 is provided on a base part 120. The case part 110 may be provided with a notch part 112 for increasing a creepage distance and improving insulation.

[0027] The upper surface of the base portion 120 is fixed to the case portion 110 by adhesive or the like. The base portion 120 may be set to a ground potential. The lower surface of the base portion may be fixed to a heat dissipation member such as a fin by a screw or the like. The base portion 120 has a main surface in the XY plane. The base portion 120 and the case portion 110 may have two pairs of opposing sides when viewed from above in the Z-axis direction. The base portion 120 and the case portion 110 of this example have long sides along the Y-axis and short sides along the X-axis.

[0028] The terminal arrangement surface 114 is a surface on the upper surface side of the case part 110 where a plurality of terminals are exposed. Each terminal electrically connects an internal circuit accommodated in the case part 110 to an external device. A first auxiliary terminal ts1 to an eleventh auxiliary terminal ts11 are provided on the terminal arrangement surface 114. The terminal arrangement surface 114 has a protrusion 116 that protrudes in the Z-axis direction.

[0029] The protrusion 116 is provided near the center of the terminal arrangement surface 114 when viewed from above. In this example, the protrusion 116 is arranged at the center in the X-axis direction of the terminal arrangement surface 114, extending along the Y-axis direction. A first external connection terminal tm1 to a fifth external connection terminal tm5 are provided on the protrusion 116. The first external connection terminal tm1 to the fifth external connection terminal tm5 are arranged in order along the Y-axis direction on the protrusion 116, but the arrangement of the external connection terminals is not limited to this.

[0030] The first external connection terminal tm1(P) is a terminal to which a positive terminal of a DC power supply provided outside the semiconductor device 100 is connected. The fourth external connection terminal tm4(N) is a terminal to which a negative terminal of an external DC power supply is connected. The first external connection terminal tm1(P) and the fourth external connection terminal tm4(N) function as power supply terminals P and N in the internal circuit of the semiconductor device 100.

[0031] The fifth external connection terminal tm5(U) functions as an AC output terminal U in the internal circuit of the semiconductor device 100. The second external connection terminal tm2(M1) and the third external connection terminal tm3(M2) are connected to a predetermined connection point in the internal circuit of the semiconductor device 100. For example, the second external connection terminal tm2(M1) and the third external connection terminal tm3(M2) function as intermediate terminals M1, M2 that clamp the voltage of the predetermined connection point in the internal circuit of the semiconductor device 100.

[0032] The first auxiliary terminal ts1 to the fifth auxiliary terminal ts5 are arranged along one end side (the long side in this example) along the Y axis of the terminal arrangement surface 114. The sixth auxiliary terminal ts6 to the eleventh auxiliary terminal ts11 are arranged along the other end side of the terminal arrangement surface 114 along the Y axis direction.

[0033] The first auxiliary terminal ts1 (T4P) outputs the collector voltage of the transistor T4 (described later). The second auxiliary terminal ts2 (T4G) is a gate terminal that supplies the gate voltage of the transistor T4. The third auxiliary terminal ts3 (T4E) outputs the emitter voltage of the transistor T4.

[0034] The fourth auxiliary terminal ts4 (T3G) is a gate terminal that supplies a gate voltage of the transistor T3, which will be described later. The fifth auxiliary terminal ts5 (T3E) outputs the emitter voltage of the transistor T3.

[0035] The sixth auxiliary terminal ts6 (T1E) outputs an emitter voltage of the transistor T1, which will be described later. The seventh auxiliary terminal ts7 (T1G) is a gate terminal that supplies a gate voltage of the transistor T1.

[0036] The eighth auxiliary terminal ts8 (T2E) outputs an emitter voltage of the transistor T2, which will be described later. The ninth auxiliary terminal ts9 (T2G) is a gate terminal that supplies a gate voltage of the transistor T2.

[0037] The tenth auxiliary terminal ts10 (TH2) and the eleventh auxiliary terminal ts11 (TH1) are terminals for a thermistor connected to a thermistor that detects the internal temperature of the case portion 110. For example, the thermistor is embedded in the case portion 110 below the tenth auxiliary terminal ts10 (TH2) and the eleventh auxiliary terminal ts11 (TH1).

[0038] 2 is an example of a plan view of the semiconductor device 100. The figure shows an example of the layout of an internal circuit provided on the base part 120 inside the case part 110. The internal circuit in this example is a three-level power conversion device (inverter) circuit, but the internal circuit is not limited to this.

[0039] The semiconductor device 100 of this example includes six insulating substrates 50a to 50f on a base portion 120. The six insulating substrates 50a, b, c, d, e, and f of this example are arranged in this order along the Y-axis direction. The insulating substrates 50 are bonded to the base portion 120. The insulating substrate 50 has a conductive pattern on both sides of a ceramic (e.g., alumina) substrate with good thermal conductivity. For example, the insulating substrate 50 is a DCB (Direct Copper Bonding) substrate in which a copper circuit plate is directly bonded onto a ceramic substrate.

[0040] One or more transistors T may be disposed on each insulating substrate 50. Each transistor T may be an insulated gate bipolar transistor (IGBT) or a field effect transistor (FET). FIG. 2 shows a semiconductor chip on which the transistors T are provided. The semiconductor device 100 of this example includes a plurality of transistors connected in parallel to each other. In the example of FIG. 2, three transistors T1 are connected in parallel. Similarly, three transistors T2 are connected in parallel, three transistors T3 are connected in parallel, and three transistors T4 are connected in parallel. In this specification, a plurality of transistors Tk (k is an integer) connected in parallel may be collectively referred to as transistors Tk.

[0041] The multiple transistors Tk connected in parallel may be arranged side by side along a predetermined first direction (the Y-axis direction in FIG. 2). In this example, the multiple transistors T1 and the multiple transistors T2 are arranged side by side along one long side of the base portion 120, and the multiple transistors T3 and the multiple transistors T4 are arranged side by side along the other long side of the base portion 120.

[0042] Moreover, the transistors T1 and T4 may be mounted on the same insulating substrate 50. The transistors T2 and T3 may be mounted on the same insulating substrate 50. The insulating substrates 50a to 50c are insulating substrates on which the transistors T4 and T1 are mounted, respectively. The insulating substrates 50d to 50f are insulating substrates on which the transistors T3 and T2 are mounted, respectively.

[0043] Also, a diode Dk may be provided on each insulating substrate 50. The diode Dk may be a free wheel diode connected in anti-parallel to the transistor Tk. In this example, the diode Dk is provided for each transistor Tk, but in other examples, the diode Dk may be provided for some of the transistors Tk. Also, the transistors and diodes in this example are provided on different semiconductor chips, but they may be reverse conducting IGBTs (RC-IBGTs) or the like provided on the same semiconductor chip.

[0044] In this example, the region in which the insulating substrate 50 is provided is divided into four circuit blocks CB1 to CB4 when viewed from above. The first circuit block CB1 is a region in which a plurality of transistors T1 provided in parallel are provided, the second circuit block CB2 is a region in which a plurality of transistors T2 provided in parallel are provided, the third circuit block CB3 is a region in which a plurality of transistors T3 provided in parallel are provided, and the fourth circuit block CB4 is a region in which a plurality of transistors T4 provided in parallel are provided. Each circuit block CBk may be provided with a diode Dk.

[0045] In this example, circuit blocks CB1-4 are divided by imaginary center lines L1 and L2. Center line L2 divides an area where insulating substrates 50a, b, and c are provided from an area where insulating substrates 50d, e, and f are provided. Center line L2 in this example is a straight line parallel to the X-axis that passes between insulating substrates 50c and 50d.

[0046] The center line L1 divides the insulating substrates 50a, b, and c into an area where multiple transistors T1 are provided and an area where multiple transistors T4 are provided. The center line L1 also divides the insulating substrates 50d, e, and f into an area where multiple transistors T2 are provided and an area where multiple transistors T3 are provided. The center line L1 in this example is a straight line parallel to the Y axis that passes through the center in the X axis direction of the area where the insulating substrate 50 is provided.

[0047] The semiconductor device 100 has a plurality of conductive patterns 36 provided on an insulating substrate 50. The conductive patterns 36 are formed of a conductive material such as copper. The semiconductor device 100 also has a plurality of connection members 90 that electrically connect each component in the internal circuit. The connection members 90 are wiring such as wires or lead frames provided above the insulating substrate 50. In FIG. 2, the connection members 90 are indicated by solid lines. Also, connection points between the connection members 90 and other components are indicated by black circles. The connection members 90 are connected to other components at the connection points by direct bonding or by soldering or the like.

[0048] The conductive pattern 36a is provided at one end in the X-axis direction of each of the insulating substrates 50a to 50c. The conductive pattern 36a electrically connects the emitter pad of the corresponding transistor T4 and the anode pad of the corresponding diode D4 to the third auxiliary terminal ts3 (T4E).

[0049] The conductive pattern 36b is provided at one end in the X-axis direction of each of the insulating substrates 50a to 50c. The conductive pattern 36b electrically connects the gate pad of the corresponding transistor T4 and the second auxiliary terminal ts2 (T4G). The conductive patterns 36a and 36b in this example are arranged in the fourth circuit block CB4, and are wirings having a longitudinal direction in the Y-axis direction.

[0050] The conductive pattern 36c is provided on each of the insulating substrates 50a to 50c. In this example, a transistor T4 and a diode D4 are provided on the conductive pattern 36c. The conductive pattern 36c is connected to the collector electrode of the transistor T4 and the cathode electrode of the diode D4 via solder or the like. Each conductive pattern 36c is also electrically connected to a first auxiliary terminal ts1 (T4P).

[0051] The conductive pattern 36d is provided on each of the insulating substrates 50a to 50c. In this example, the conductive pattern 36d electrically connects the emitter pad of the transistor T4 and the anode pad of the diode D4 to the conductive pattern 36b. The conductive patterns 36c and 36d are arranged in the fourth circuit block CB4.

[0052] The conductive pattern 36h is provided at one end in the X-axis direction of each of the insulating substrates 50a to 50c. The conductive pattern 36h electrically connects the emitter pad of the corresponding transistor T1 and the anode pad of the corresponding diode D1 to the sixth auxiliary terminal ts6 (T1E).

[0053] The conductive pattern 36g is provided at one end in the X-axis direction of each of the insulating substrates 50a to 50c. The conductive pattern 36g electrically connects the gate pad of the corresponding transistor T1 and the seventh auxiliary terminal ts7 (T1G). The conductive patterns 36h and 36g in this example are arranged in the first circuit block CB1 and are wirings having a longitudinal direction in the Y-axis direction.

[0054] The conductive pattern 36f is provided on each of the insulating substrates 50a to 50c. In this example, the transistor T1 and the diode D1 are provided on the conductive pattern 36f. The conductive pattern 36f is connected to the collector electrode of the transistor T1 and the cathode electrode of the diode D1 via solder or the like. In this example, the conductive pattern 36f is provided continuously with the conductive pattern 36d. As a result, the collector pad of the transistor T1 and the emitter pad of the transistor T4 are electrically connected to each other.

[0055] The conductive pattern 36e is provided on each of the insulating substrates 50a to 50c. In this example, the conductive pattern 36e electrically connects the emitter pad of the transistor T1 and the anode pad of the diode D1 to the conductive pattern 36h. The conductive patterns 36f and 36e are disposed in the first circuit block CB1.

[0056] The conductive pattern 36i is provided at one end in the X-axis direction of each of the insulating substrates 50d to 50f. The conductive pattern 36i electrically connects the emitter pad of the corresponding transistor T3 and the anode pad of the corresponding diode D3 to the fifth auxiliary terminal ts5 (T3E).

[0057] The conductive pattern 36j is provided at one end in the X-axis direction of each of the insulating substrates 50d to 50f. The conductive pattern 36j electrically connects the gate pad of the corresponding transistor T3 and the fourth auxiliary terminal ts4 (T3G). The conductive patterns 36i and 36j in this example are arranged in the third circuit block CB3 and are wirings having a longitudinal direction in the Y-axis direction.

[0058] Conductive pattern 36k is provided on each of insulating substrates 50d to 50f. In this example, a transistor T3 and a diode D3 are provided on conductive pattern 36k. Conductive pattern 36k is connected to the collector electrode of transistor T3 and the cathode electrode of diode D3 via solder or the like.

[0059] Conductive pattern 36l is provided on each of insulating substrates 50d-50f. In this example, conductive pattern 36l electrically connects conductive pattern 36i to the emitter pad of transistor T3 and the anode pad of diode D3. Conductive patterns 36k and 36l are disposed in third circuit block CB3.

[0060] The conductive pattern 36o is provided at one end in the X-axis direction of each of the insulating substrates 50d to 50f. The conductive pattern 36o electrically connects the emitter pad of the corresponding transistor T2 and the anode pad of the corresponding diode D2 to the eighth auxiliary terminal ts8 (T2E).

[0061] The conductive pattern 36n is provided at one end in the X-axis direction of each of the insulating substrates 50d to 50f. The conductive pattern 36n electrically connects the gate pad of the corresponding transistor T2 and the ninth auxiliary terminal ts9 (T2G). The conductive patterns 36o and 36n in this example are arranged in the second circuit block CB2 and are wirings having a longitudinal direction in the Y-axis direction.

[0062] Conductive pattern 36m is provided on each of insulating substrates 50d to 50f. In this example, a transistor T2 and a diode D2 are provided on conductive pattern 36m. Conductive pattern 36m is connected to the collector electrode of transistor T2 and the cathode electrode of diode D2 via solder or the like.

[0063] The conductive pattern 36p is provided on each of the insulating substrates 50d to 50f. In this example, the conductive pattern 36p electrically connects the emitter pad of the transistor T2 and the anode pad of the diode D2 to the conductive pattern 36o. The conductive patterns 36m and 36p are arranged in the second circuit block CB2. In this example, the conductive pattern 36p is provided continuously with the conductive pattern 36k. This electrically connects the collector pad of the transistor T3 and the emitter pad of the transistor T2 to each other.

[0064] The semiconductor device 100 of this example includes an inter-block connection portion 202, a first block intra-block connection portion 204, a second block intra-block connection portion 206, a third block intra-block connection portion 208, and a fourth block intra-block connection portion 209. The inter-block connection portion 202 electrically connects two circuit blocks CB. The inter-block connection portion 202 of this example electrically connects a first circuit block CB1 and a second circuit block CB2.

[0065] The inter-block connection portion 202 is electrically connected to any of the circuit elements in each of the circuit blocks CB. In this example, the inter-block connection portion 202 is connected to the plurality of conductive patterns 36e of the first circuit block CB1 and the plurality of conductive patterns 36m of the second circuit block CB2.

[0066] Each intra-block connection portion is electrically connected to a plurality of circuit elements in one circuit block CB. The first intra-block connection portion 204 of this example is connected to a plurality of conductive patterns 36l of the third circuit block CB3. The second intra-block connection portion 206 of this example is connected to a plurality of conductive patterns 36c of the fourth circuit block CB4. The third intra-block connection portion 208 of this example is connected to a plurality of conductive patterns 36f of the first circuit block CB1. The fourth intra-block connection portion 209 of this example is connected to a plurality of conductive patterns 36p of the second circuit block CB2.

[0067] The inter-block connection portions 202 and the intra-block connection portions may be plate-shaped conductive members arranged above the insulating substrate 50. At least a portion of the plate-shaped portions of the inter-block connection portions 202 and the intra-block connection portions may be arranged perpendicular to the insulating substrate 50. The inter-block connection portions 202 and the intra-block connection portions may be formed of a conductive material such as copper or aluminum. In FIG. 2, a region of each conductive pattern 36 that is connected to the inter-block connection portions 202 or the intra-block connection portions is shown as a connection region 210.

[0068] 3 is a diagram showing an example of a circuit configuration in an internal circuit of the semiconductor device 100. The internal circuit in this example is a circuit for one phase (U phase) of three phases (U phase, V phase, W phase) of a three-level power conversion (inverter) circuit.

[0069] Between the first external connection terminal tm1(P) and the fourth external connection terminal tm4(N), the transistor T4, the transistor T1, the transistor T2, and the transistor T3 are connected in series in this order. As described in FIG. 2, the transistors Tk are connected in parallel, but in the circuit of FIG. 3, they are shown as one transistor. For example, the transistors T4 are connected in parallel with each other, the transistors T1 are connected in parallel with each other, and the transistors T4 and the transistors T1 are connected in series. A diode Dk is connected in anti-parallel to each transistor Tk.

[0070] The connection point between the emitter terminal of the transistor T1 and the collector terminal of the transistor T2 is referred to as a connection point C1. The connection point C1 is connected to a fifth external connection terminal tm5(U) which serves as an AC output terminal.

[0071] The collector terminal of the transistor T1 and the emitter terminal of the transistor T2 are connected via two diodes D5 and D6 arranged in series. The diodes D5 and D6 are arranged such that the direction from the emitter terminal of the transistor T2 to the collector terminal of the transistor T1 is the forward direction. Note that the diodes D5 and D6 are omitted in FIG. 2. The diodes D5 and D6 may be provided on the conductive pattern 36, may be provided in the first block intra-connection portion 204 or the second block intra-connection portion 206, or may be provided in another location.

[0072] The connection point between the diodes D5 and D6 is referred to as a connection point C2. The connection point C2 is connected to the second external connection terminal tm2 (M1) and the third external connection terminal tm3 (M2). With this configuration, the internal circuit operates as an I-type three-level power conversion circuit in which four transistors T are connected in series.

[0073] 4A is a diagram for explaining an overview of each circuit block CB. The first circuit block CB1 has a plurality of first circuit portions 211 connected in parallel. In this example, each of the first circuit portions 211 includes a conductive pattern 36-e and a conductive pattern 36-f, and a transistor T1 and a diode D1 arranged on these conductive patterns.

[0074] The second circuit block CB2 has a plurality of second circuit portions 212 connected in parallel. In this example, each second circuit portion 212 includes a conductive pattern 36-m and a conductive pattern 36-p, and a transistor T2 and a diode D2 disposed on these conductive patterns.

[0075] The third circuit block CB3 has a plurality of third circuit portions 213 connected in parallel. In this example, each third circuit portion 213 includes a conductive pattern 36-k and a conductive pattern 36-l, and a transistor T3 and a diode D3 disposed on these conductive patterns.

[0076] The fourth circuit block CB4 has a plurality of fourth circuit portions 214 connected in parallel. In this example, each fourth circuit portion 214 includes a conductive pattern 36-c and a conductive pattern 36-d, and a transistor T4 and a diode D4 disposed on these conductive patterns.

[0077] In this example, the first circuit block CB1 and the second circuit block CB2 are arranged side by side along the first direction (Y-axis direction). Similarly, the third circuit block CB3 and the fourth circuit block CB4 are arranged side by side along the first direction (Y-axis direction). Also, the first circuit block CB1 and the fourth circuit block CB4 are arranged side by side along the second direction (X-axis direction). Similarly, the second circuit block CB2 and the third circuit block CB3 are arranged side by side along the second direction (X-axis direction). Note that, as shown in FIG. 2, in this example, the first direction (Y-axis direction) is a direction parallel to the long side of the base portion 120. Also, in this example, the second direction (X-axis direction) is a direction parallel to the short side of the base portion 120.

[0078] Moreover, the multiple circuit units in each circuit block CB are arranged side by side along the first direction (Y-axis direction). For example, the first circuit units 211-1, 211-2, and 211-3 are arranged side by side along the first direction. Note that the circuit units being arranged side by side along the first direction means that the positions of the respective circuit units in the first direction are different. In a direction perpendicular to the first direction (the X-axis direction in this example), the respective circuit units may be arranged at the same position or may be arranged with a shift. Each circuit unit may have a portion overlapping a straight line parallel to the first direction.

[0079] As described above, the inter-block connection unit 202 connects the first circuit block CB1 and the second circuit block CB2. That is, the inter-block connection unit 202 is connected to each of the multiple first circuit units 211 and the multiple second circuit units 212.

[0080] 4B is a diagram showing an example of first circuit portions 211 lined up along the first direction. The positions of the first circuit portions 211 in the first direction (Y axis) are different. Note that the position of the center of gravity of the shape of the conductive pattern in which the connection region 210 is provided on the XY plane may be used as the position of each first circuit portion 211. In this example, the positions of the first circuit portions 211 in the X axis are the same.

[0081] FIG. 4C is a diagram showing another example of first circuit portions 211 arranged along the first direction. In this example, the positions of each first circuit portion 211 in the first direction (Y axis) are different. In this example, each first circuit portion 211 is arranged at a different position in the X axis direction. In this specification, such a form is also included in the arrangement along the first direction. Note that each first circuit portion 211 in this example is arranged so that there is a straight line 201 parallel to the first direction that passes through the conductive pattern 36 of each first circuit portion 211. In another example, at least one first circuit portion 211 may be arranged so that the conductive pattern 36 does not overlap the straight line 201.

[0082] 4D is a diagram showing another example of first circuit portions 211 lined up along the first direction. In this example as well, the positions of the respective first circuit portions 211 in the first direction (Y axis) are different. In this example, at least one first circuit portion 211 has a portion that overlaps with another first circuit portion 211 in the X axis direction. In this specification, such a form is also included in the first circuit portions lined up along the first direction.

[0083] 4B to 4D, the first circuit portion 211 is used for the description, but the same applies to the other circuit portions. The same also applies to the circuit block CB. In Fig. 4B to 4D, the case where the first circuit portion 211 is arranged along the first direction is described, but the same also applies to the case where the first circuit portion 211 is arranged along the other direction.

[0084] FIG. 5 is a diagram showing an example of the shapes of the inter-block connection portion 202, the first block internal connection portion 204, and the second block internal connection portion 206. FIG. 5 shows the shapes of the inter-block connection portion 202, the first block internal connection portion 204, and the second block internal connection portion 206 on the YZ plane. Note that FIG. 5 shows the inter-block connection portion 202, the first block internal connection portion 204, and the second block internal connection portion 206 on the same YZ plane. As shown in FIG. 2, the inter-block connection portion 202, the first block internal connection portion 204, and the second block internal connection portion 206 are provided at different positions on the X axis. In this example, the first block internal connection portion 204 is an example of a first connection portion, the inter-block connection portion 202 is an example of a second connection portion, and the second block internal connection portion 206 is an example of a third connection portion.

[0085] Each of the connection parts is formed of a plate-shaped conductive material and is connected to one of the circuit parts. In this example, the inter-block connection part 202 is connected to a plurality of first circuit parts 211 and a plurality of second circuit parts 212, the first block internal connection part 204 is connected to a plurality of third circuit parts 213, and the second block internal connection part 206 is connected to a plurality of fourth circuit parts 214.

[0086] In this specification, the term "plate-like" refers to a shape in which the area of ​​each of the two opposing main surfaces is larger than the area of ​​any of the other surfaces. The area of ​​each of the main surfaces may be five times or more the largest area of ​​the other surfaces. In FIG. 5, the main surface 305 of the plate-like portion 220 is parallel to the YZ plane.

[0087] The inter-block connection portion 202 and the first block internal connection portion 204 are disposed with their respective principal surfaces facing each other. "The respective principal surfaces facing each other" refers to a state in which a normal line at any point on one of the principal surfaces passes through the other principal surface. In this example, the principal surface 305 of the inter-block connection portion 202 and the principal surface 307 of the first block internal connection portion 204 are disposed in parallel. Note that in the example shown in FIG. 5, the principal surface opposite to the principal surface 307 of the first block internal connection portion 204 is disposed facing the principal surface 305 of the inter-block connection portion 202.

[0088] In this specification, two surfaces being parallel includes a state in which they are arranged strictly parallel, as well as a state in which they are arranged with a certain small angle therebetween. The small angle may be within 5 degrees. In this example, the main surface 305 of the inter-block connection portion 202 and the main surface 307 of the first intra-block connection portion 204 are both parallel to the YZ plane.

[0089] The inter-block connection portion 202 and the second block internal connection portion 206 are disposed with their respective principal surfaces facing each other. In this example, the principal surface 305 of the inter-block connection portion 202 and the principal surface 303 of the second block internal connection portion 206 are disposed in parallel.

[0090] In this example, the first block intra-connecting portion 204 and the second block intra-connecting portion 206 are both arranged facing the same main surface 305 of the inter-block connection portion 202. In other words, the first block intra-connecting portion 204 and the second block intra-connecting portion 206 are arranged on the same side with respect to the inter-block connection portion 202. The first block intra-connecting portion 204 and the second block intra-connecting portion 206 in this example are arranged side by side in the Y-axis direction.

[0091] Furthermore, the inter-block connection portion 202 and the first block intra-connection portion 204 have overlapping regions 351 that overlap when viewed from a direction perpendicular to the main surface 305 or the main surface 307 (the X-axis direction in this example). In this example, the inter-block connection portion 202 has overlapping region 351 that overlaps with the first block intra-connection portion 204, and overlapping region 352 that overlaps with the second block intra-connection portion 206. In this example, the overlapping regions 351 and 352 are arranged side by side in the Y-axis direction.

[0092] Each connection part has a path regulator that regulates the current path on the main surface. The path regulator regulates the current path on the main surface of the connection part by increasing the resistance value of the current path of the current flowing through at least one circuit part. In the example of FIG. 5, the path regulator is a slit provided in the plate-like part of each connection part. The slit is a groove that penetrates the plate-like part in the X-axis direction, and diverts the current flowing through at least one circuit part to increase the current path length. This increases the resistance value of the current path compared to when no slit is provided. However, the path regulator is not limited to a slit as long as it increases the resistance value of the current path. As an example, a path regulator using a material with a higher resistivity than other parts may be provided in a part of the plate-like part and each connection end, a path regulator having a smaller thickness in the X-axis direction than other parts may be provided, or a path regulator having a mesh region with multiple through holes may be provided. For example, at the position where the slit shown in FIG. 5 is provided, a member using a high resistance material may be provided instead of the slit, a region with a small thickness may be provided instead of the slit, or a mesh region may be provided with multiple through holes.

[0093] Each of the connection parts has a plate-shaped portion. In this example, the inter-block connection part 202 has a plate-shaped portion 220, the first block internal connection part 204 has a plate-shaped portion 320, and the second block internal connection part 206 has a plate-shaped portion 321.

[0094] Each connection portion has a circuit connection end portion connected to the circuit portion. The circuit connection end portion may be provided so as to protrude from the end side of the plate-shaped portion closest to the circuit portion toward the circuit portion. The inter-block connection portion 202 of this example has a plurality of first connection ends 231 connected to the first circuit portion 211 and a plurality of second connection ends 232 connected to the second circuit portion 212 at the end side 224. The first intra-block connection portion 204 of this example has a plurality of third connection ends 254 connected to the third circuit portion 213 at the end side 252. The second intra-block connection portion 206 of this example has a plurality of fourth connection ends 264 connected to the fourth circuit portion 214 at the end side 262.

[0095] An end of the first connection end 231 on the first circuit portion 211 side is disposed at position 354 on the Z axis. An end of the second connection end 232 on the second circuit portion 212 side may be disposed at position 354 on the Z axis. An end of the third connection end 254 on the third circuit portion 213 side may be disposed at position 354 on the Z axis. An end of the fourth connection end 264 on the fourth circuit portion 214 side may be disposed at position 354 on the Z axis. However, the positions of each connection end in the Z axis direction may be different.

[0096] Each connection portion has a slit at a position away from the end side where the circuit connection end portion is provided in the Z-axis direction. The slit may be provided extending in the Y-axis direction (i.e., may have a longitudinal direction in the Y-axis direction). The inter-block connection portion 202 of this example has a first internal slit 244-1 and a second internal slit 244-2 extending in the Y-axis direction at a position away from the end side 224. The first intra-block connection portion 204 of this example has a first parallel slit 256 extending in the Y-axis direction at a position away from the end side 252. The first parallel slit 256 may be arranged parallel to the first internal slit 244-1.

[0097] The second block internal connection portion 206 of this example has a second parallel slit 310 extending in the Y-axis direction at a position away from the end side 262. The second parallel slit 310 may be arranged parallel to the second internal slit 244-2. The first internal slit 244-1 and the first parallel slit 256 are arranged in an overlapping region 351. The second internal slit 244-2 and the second parallel slit 310 are arranged in an overlapping region 352.

[0098] Each connection portion has a current path between the slit extending in the Y-axis direction and the circuit connection end portion. The current path may be provided extending in the Y-axis direction (i.e., may have a longitudinal direction in the Y-axis direction). The inter-block connection portion 202 of this example has a current path 300-1 between the end side 224 and the first internal slit 244-1, and a current path 300-2 between the end side 224 and the second internal slit 244-2. The current paths 300-1 and 300-2 of this example are arranged apart in the Y-axis direction. The first intra-block connection portion 204 of this example has a current path 301 between the end side 252 and the first parallel slit 256. The second intra-block connection portion 206 of this example has a current path 302 between the end side 262 and the second parallel slit 310. The current paths 300-1 and 301 are arranged in the overlapping region 351. The current path 300 - 2 and the current path 302 are disposed in an overlap region 352 .

[0099] The current path 300-1 and the current path 301 may at least partially overlap when viewed from the X-axis direction. The current path 300-1 and the current path 301 may have an overlapping area that is equal to or more than half the area of ​​the current path when viewed from the X-axis direction. The current path 300-2 and the current path 302 may at least partially overlap when viewed from the X-axis direction. The current path 300-2 and the current path 302 may have an overlapping area that is equal to or more than half the area of ​​the current path when viewed from the X-axis direction.

[0100] The second block internal connection portion 206 of this example has an external connection end 261 that functions as the first external connection terminal tm1(P) described in FIG. 3 and the like. The first block internal connection portion 204 has an external connection end 251 that functions as the fourth external connection terminal tm4(N) described in FIG. 3 and the like. As described in FIG. 3 and the like, in the semiconductor device 100 of this example, a current flows from the external connection end 261 of the second block internal connection portion 206 to the fourth connection end 264, the first connection end 231 of the inter-block connection portion 202, the second connection end 232 of the inter-block connection portion 202, the third connection end 254 of the first block internal connection portion 204, and the external connection end 251 of the first block internal connection portion 204 in this order. In each figure, the direction of the current on the main surface of each connection portion is indicated by a dashed arrow.

[0101] In this example, the direction of the current flowing through the current path 300-1 of the inter-block connection unit 202 is different from the direction of the current flowing through the current path 301 of the first intra-block connection unit 204. For example, in the current path 300-1, the current flowing through the second connection end 232-3 flows in the negative direction of the Y axis. In contrast, in the current path 301, the current flowing through the third connection end 254-3 flows in the positive direction of the Y axis. Similarly, in the current path 300-2, the current flowing through the first connection end 231-1 flows in the negative direction of the Y axis. In contrast, in the current path 302, the current flowing through the fourth connection end 264-1 flows in the positive direction of the Y axis.

[0102] In this way, by making the current directions in the current paths arranged opposite to each other in the X-axis direction different, it is possible to suppress electromagnetic mutual induction between two connection parts arranged opposite to each other in the X-axis direction. It is preferable that the current directions in the current paths arranged opposite to each other in the X-axis direction are opposite to each other. The opposite directions include the case where the current directions are exactly 180 degrees different, as well as the case where there is a predetermined angle error. The angle error is, for example, 45 degrees or less. With this configuration, it is possible to suppress the occurrence of oscillation or noise in the voltage and current. Note that the electromagnetic mutual induction between the connection parts becomes more noticeable as the distance between the connection parts becomes closer. The distance in the X-axis direction between the inter-block connection part 202 and the first block internal connection part 204 may be 1 cm or less, or may be 0.5 mm or less. The distance in the X-axis direction between the inter-block connection part 202 and the second block internal connection part 206 may be 1 cm or less, or may be 0.5 mm or less.

[0103] In each of the inter-block connection portion 202 and the first internal block connection portion 204, the circuit connection end portion and the slit are arranged so that at least a part of the current flows around the slit. The current flows around the slit means that there is a region adjacent to the slit where the current flows in the opposite direction. In this example, the current flows in the opposite direction in the region between the first internal slit 244-1 and the edge 224 and the region between the first internal slit 244-1 and the edge 226.

[0104] For example, in the inter-block connection portion 202, the current flowing through the second connection end portion 232-3 flows counterclockwise around the first internal slit 244-1. In contrast, in the first intra-block connection portion 204, the current flowing through the third connection end portion 254-3 flows clockwise around the first parallel slit 256. In this way, the direction in which the current flows around the slit is opposite in the two opposing connection portions, which further suppresses the overall electromagnetic induction between the two connection portions.

[0105] The direction of current flow around the slit may be opposite in the inter-block connection portion 202 and the second internal block connection portion 206. For example, in the inter-block connection portion 202, the current flowing through the first connection end portion 231-1 flows counterclockwise around the second internal slit 244-2. In contrast, in the second internal block connection portion 206, the current flowing through the fourth connection end portion 264-1 may flow clockwise around the second parallel slit 310.

[0106] (First embodiment) The inter-block connection portion 202 of this embodiment has a plate-shaped portion 220, a plurality of first connection ends 231, and a plurality of second connection ends 232. The plate-shaped portion 220 may be a plate-shaped member extending from above the first circuit portion 211-3 arranged at one end to above the second circuit portion 212-1 arranged at the other end of the first circuit portion 211 and the second circuit portion 212 arranged side by side in the Y-axis direction. The plate-shaped portion 220 may be provided perpendicular to the XY plane. The plate-shaped portion 220 has an end side 224 facing the circuit block CB and an end side 226 on the opposite side to the end side 224.

[0107] The first connection end 231 is provided for each first circuit portion 211. The first connection end 231 is provided to protrude from the end side 224 of the plate-shaped portion 220 toward the first circuit portion 211, and is connected to the first circuit portion 211 at the connection region 210. The second connection end 232 is provided for each second circuit portion 212. The second connection end 232 is provided to protrude from the end side 224 of the plate-shaped portion 220 toward the second circuit portion 212, and is connected to the second circuit portion 212 at the connection region 210. In FIG. 5, the first connection end 231 and the second connection end 232 are shown diagrammatically. Each connection end may have a portion extending parallel to the XY plane, or may have a curved portion.

[0108] In the semiconductor device 100, a current may flow between the first circuit block CB1 and the second circuit block CB2 via the inter-block connection part 202. For example, in the circuit shown in FIG 3, when a short-circuit state occurs in which the transistors T1 and T2 are simultaneously turned on, a current may flow between the transistors T1 and T2.

[0109] The second circuit units 212 of the second circuit block CB2 are arranged in the Y-axis direction. Therefore, the length of the current path between each second circuit unit 212 and the first circuit block CB21 is different. Since the electrical resistance is determined according to the length of the current path, there may be a variation in the magnitude of the current flowing through each second circuit unit 212. If there is a variation in the current between the multiple circuit units provided in parallel, the breakdown voltage of the semiconductor device 100 will decrease. For example, there may be a case where the peak value of the short-circuit current flowing through the semiconductor device 100 becomes large.

[0110] The inter-block connection unit 202 of this example has at least a path regulator that increases the resistance value of a current path 230 from the first circuit block CB1 to the second circuit unit 212-3. The second circuit unit 212-3 is the second circuit unit 212 that is disposed closest to the first circuit block CB1 in the second circuit block CB2. Since a current is most likely to concentrate in the second circuit unit 212-3 that is closest to the first circuit unit block CB1, the withstand voltage of the semiconductor device 100 can be efficiently improved by lengthening the current path 230 to the second circuit unit 212-3.

[0111] Furthermore, the path regulation unit may increase a resistance value in a current path from the second circuit block CB2 to the first circuit unit 211-1. The first circuit unit 211-1 is the first circuit unit 211 that is disposed closest to the second circuit block CB2 in the first circuit block CB1. Since a current is most likely to concentrate in the first circuit unit 211-1, the withstand voltage of the semiconductor device 100 can be efficiently improved by lengthening the current path to the first circuit unit 211-1.

[0112] The path regulator of this example may be a T-shaped slit as shown in FIG. 5. The inter-block connection portion 202 has an end side slit 242, a first internal slit 244-1, and a second internal slit 244-2. The end side slit 242 is provided between the first connection end 231-1 and the second connection end 232-3 at the end side 224 of the plate-shaped portion 220, and is provided extending from the end side 224 to the inside of the plate-shaped portion 220. The first connection end 231-1 is the first connection end 231 that is disposed closest to the second connection end 232 among the multiple first connection ends 231. The second connection end 232-3 is the second connection end 232 that is disposed closest to the first connection end 231 among the multiple second connection ends 232. The end side slit 242 may be disposed in the center between the first connection end 231-1 and the second connection end 232-3. The edge slit 242 may be provided extending from the edge 224 in parallel to the Z-axis direction.

[0113] The first internal slit 244-1 is provided in the plate-like portion 220 so as to be connected to the edge slit 242, and is provided so as to extend along the edge 224 toward the first connection end 231. The first internal slit 244-1 may be provided parallel to the edge 224, or may be provided at an inclination with respect to the edge 224. The first internal slit 244-1 may be provided so as to extend at least to the outside of the first connection end 231-1. The outside refers to the side away from the edge slit 242 in the Y axis. The first internal slit 244-1 of this example may extend to the first connection end 231-2 that is disposed in the center in the Y axis direction among the multiple first connection ends 231, or may extend to the outside of the first connection end 231-2. With such an arrangement, the length of the current path corresponding to each first connection end 231 can be averaged. The first inner slit 244-1 does not have to extend to a position opposite the first connection end 231-3, which is the outermost one of the multiple first connection ends 231, in the Z-axis direction.

[0114] The second internal slit 244-2 is provided in the plate-like portion 220, connected to the end edge slit 242, and extends along the end edge 224 toward the second connection end portion 232. The second internal slit 244-2 may be provided parallel to the end edge 224, or may be provided at an inclination with respect to the end edge 224. The first internal slit 244-1 and the second internal slit 244-2 are disposed away from the end edge 224 in the Z-axis direction. As an example, the first internal slit 244-1 and the second internal slit 244-2 may be connected to the upper end of the end edge slit 242 in the Z-axis direction, and each may be provided extending in the Y-axis direction.

[0115] The second internal slit 244-2 may be provided so as to extend at least to the outside of the second connection end 232-3. The second internal slit 244-2 in this example may extend to the second connection end 232-2 that is disposed in the center in the Y-axis direction among the multiple second connection ends 232, or may extend to the outside of the second connection end 232-2. With such an arrangement, the length of the current path corresponding to each second connection end 232 can be averaged. The second internal slit 244-2 does not have to extend to a position facing the second connection end 232-1 that is disposed on the outermost side among the multiple second connection ends 232 in the Z-axis direction.

[0116] This structure makes it possible to increase the length of the current paths to the first circuit portion 211-1 and the second circuit portion 212-3, etc., which are disposed on the inside, and therefore to increase the electrical resistance value of these current paths.

[0117] The inter-block connection portion 202 of this example is provided with an external connection end portion 222. The external connection end portion 222 may protrude upward from the end side 226. The external connection end portion 222 of this example functions as a fifth external connection terminal tm5(U).

[0118] The plate-like portion 220 of this example may have a narrow region 228 whose width in the Z-axis direction is smaller than that of other regions. For example, the narrow region 228 is disposed in a region in which the convex portion 116 in FIG. 1 is not provided, and the plate-like portion 220 other than the narrow region 228 is disposed below the convex portion 116. That is, the plate-like portion 220 may be provided with the narrow region 228 depending on the shape of the case portion 110 and the like. The width of the plate-like portion 220 between the internal slit 244 and the end side 224 may be the same as or smaller than the width of the narrow region 228. By setting the width of each portion in this way, it is possible to suppress the variation in resistance value between the current path of the second circuit portion 212-1 in which the narrow region 228 is included in the current path and the current path of the other second circuit portion 212.

[0119] In the semiconductor device 100, a current may flow in a U-shape or a C-shape between the multiple circuit blocks CB. For example, when a short circuit occurs between the first external connection terminal tm1(P) and the fourth external connection terminal tm4(N), a current flows in a U-shape through the fourth circuit block CB4, the first circuit block CB1, the second circuit block CB2, and the third circuit block CB3 in that order. When a short circuit occurs between the second external connection terminal tm2(M1) and the fourth external connection terminal tm4(N), a current flows in a C-shape through the first circuit block CB1, the second circuit block CB2, and the third circuit block CB3 in that order. When a short circuit occurs between the third external connection terminal tm3(M2) and the first external connection terminal tm1(P), a current flows in a C-shape through the second circuit block CB2, the first circuit block CB1, and the fourth circuit block CB4 in that order.

[0120] When a current flows around an internal circuit in a U-shape or C-shape, the current path for a circuit unit arranged on the center side of the current flow is likely to be shorter than the current path for a circuit unit arranged away from the center. According to the inter-block connection unit 202 of this example, the current path for a circuit unit arranged near the center of the current flow can be increased, and therefore the overall balance of the length of the current paths can be improved.

[0121] 5 has the first internal slit 244-1 and the second internal slit 244-2, but in other examples, it may have either the first internal slit 244-1 or the second internal slit 244-2. Even in this case, the internal slit 244 is connected to the end side slit 242.

[0122] The first block internal connection portion 204 of this embodiment has a plate-shaped portion 250, a plurality of third connection ends 254, and an external connection end 251. The plate-shaped portion 250 may be a plate-shaped member extending from above the third circuit portion 213-1 arranged at one end to above the third circuit portion 213-3 arranged at the other end among the plurality of third circuit portions 213 arranged side by side in the Y-axis direction. The plate-shaped portion 250 may be provided perpendicular to the XY plane. The plate-shaped portion 250 has an end side 252 facing the third circuit block CB3 and an end side 253 on the opposite side to the end side 252.

[0123] The third connection end 254 is provided for each third circuit portion 213. The third connection end 254 is provided protruding from the end side 252 of the plate-shaped portion 250 toward the third circuit portion 213, and is connected to the third circuit portion 213. FIG. 5 shows the third connection end 254 diagrammatically. The third connection end 254 may have a portion extending parallel to the XY plane, or may have a curved portion. The external connection end 251 may protrude upward from the end side 253.

[0124] The plate-like portion 250 of this example is provided with a first parallel slit 256. The first parallel slit 256 is provided so as to cross the shortest straight line connecting the third connection end 254-3, which is the third connection end 254 closest to the fourth circuit block CB4, and the external connection end 251. This allows the first parallel slit 256 to lengthen the current path between the external connection end 251 and the third connection end 254-3, thereby increasing the resistance value of the current path to the third connection end 254-3. This makes it possible to suppress the current to the third circuit section 213-3, which is located on the side of the current circulation center. The first parallel slit 256 of this example is provided so as to cross the shortest straight line connecting the third connection end 254-2 and the external connection end 251.

[0125] The first parallel slit 256 is, for example, a linear slit. An end of the first parallel slit 256 is provided extending from one of the end sides of the plate-shaped portion 250 into the inside of the plate-shaped portion 250. In this example, the first parallel slit 256 is provided in an end side 255 that is closest to the third connection end 254-3 among the end sides parallel to the Z axis of the plate-shaped portion 250. The end side 255 is an end side of the first intra-block connection portion 204 that faces the second intra-block connection portion 206.

[0126] In this example, the external connection end 251 is disposed on the fourth circuit block CB4 side relative to the center Yc in the first direction (Y-axis direction) of the plate-shaped portion 250. The external connection end 251 may be provided on the end of the edge 253 of the plate-shaped portion 250 on the edge 255 side.

[0127] The second block internal connection portion 206 of this embodiment has a plate-shaped portion 260, a plurality of fourth connection ends 264, and an external connection end 261. The plate-shaped portion 260 may be a plate-shaped member extending from above a fourth circuit portion 214-1 arranged at one end to above a fourth circuit portion 214-3 arranged at the other end among the plurality of fourth circuit portions 214 arranged side by side in the Y-axis direction. The plate-shaped portion 260 may be provided perpendicular to the XY plane. The plate-shaped portion 260 has an end side 262 facing the fourth circuit block CB4 and an end side 263 on the opposite side to the end side 262.

[0128] The fourth connection end 264 is provided for each fourth circuit portion 214. The fourth connection end 264 is provided protruding from the end side 262 of the plate-shaped portion 260 toward the fourth circuit portion 214, and is connected to the fourth circuit portion 214. FIG. 5 shows the fourth connection end 264 in a schematic manner. The fourth connection end 264 may have a portion extending parallel to the XY plane, or may have a curved portion. The external connection end 261 may protrude upward from the end side 263.

[0129] In this embodiment, the plate-like portion 260 is provided with a second parallel slit 310. The second parallel slit 310 is provided so as to cross the shortest straight line connecting the fourth connection end 264-1, which is the fourth connection end 264 closest to the third circuit block CB3, and the external connection end 261. This allows the second parallel slit 310 to lengthen the current path between the external connection end 261 and the fourth connection end 264-1, thereby increasing the resistance of the current path to the fourth connection end 264-1. This allows the current to be suppressed to the fourth circuit portion 214-1, which is located on the current circulation center side.

[0130] The second parallel slit 310 is, for example, a linear slit. An end of the second parallel slit 310 is provided extending from any one of the end sides of the plate-shaped portion 260 into the inside of the plate-shaped portion 260. In this example, the second parallel slit 310 is provided in an end side 311 that is closest to the fourth connection end 264-1 among the end sides parallel to the Z axis of the plate-shaped portion 260. The end side 311 is an end side that faces the first intra-block connection portion 204 in the second intra-block connection portion 206.

[0131] In this example, the external connection end 261 is disposed on the opposite side to the third circuit block CB3 from the center Yc in the first direction (Y-axis direction) of the plate-shaped portion 250. The external connection end 261 may be provided on an end of an edge 263 of the plate-shaped portion 260 on the opposite side to the third circuit block CB3.

[0132] The position of the external connection terminal of the block internal connection portion shown in Fig. 5 is limited by the shape of the case portion 110, the arrangement of the external device, etc. In contrast, as shown in Fig. 5, by adjusting whether or not to provide a slit in the block internal connection portion depending on the position of the external connection terminal, it is possible to suppress variation in the resistance value of the current path in the entire circuit.

[0133] FIG. 6 is a diagram for explaining the position of the slits in each connection portion. The height of the inter-block connection portion 202 is h1, the height position of the first internal slit 244-1 and the second internal slit 244-2 is h2, the height of the first block internal connection portion 204 is h3, the height position of the first parallel slit 256 is h4, the height of the second block internal connection portion 206 is h5, and the height position of the second parallel slit 310 is h6. The height of each connection portion is the length in the Z-axis direction from the position 354 to the upper end of each connection portion. The upper end of each connection portion may be the upper end of the external connection terminal, or the upper end of the plate-like portion. The height position of each slit is the position in the Z-axis direction of the upper end of each slit based on the position 354. In addition, the width in the Z-axis direction of the first internal slit 244-1 and the second internal slit 244-2 is W1, the width in the Z-axis direction of the first parallel slit 256 is W2, and the width in the Z-axis direction of the second parallel slit 310 is W3.

[0134] A height position h4 of the first parallel slit 256 may be the same as a height position h2 of the first internal slit 244-1. The height positions being the same include cases where they are strictly the same, as well as cases where there is a certain error. The error may be smaller than the width W1 of the first internal slit 244-1, and may be smaller than the width W2 of the first parallel slit 256. By providing the first internal slit 244-1 and the first parallel slit 256 at the same height position, it becomes easier to suppress electromagnetic mutual induction between the inter-block connection portion 202 and the first intra-block connection portion 204.

[0135] The height position h6 of the second parallel slit 310 may be the same as the height position h2 of the second internal slit 244-2. The height positions being the same include the case where they are strictly the same, as well as the case where they have a certain error. The error may be smaller than the width W1 of the second internal slit 244-2, and may be smaller than the width W3 of the second parallel slit 310. By providing the second internal slit 244-2 and the second parallel slit 310 at the same height position, it becomes easier to suppress electromagnetic mutual induction between the inter-block connection portion 202 and the second intra-block connection portion 206.

[0136] In addition, when the height h1 of the inter-block connection portion 202 and the height h3 of the first intra-block connection portion 204 are different, the height position h4 of the first parallel slit 256 may be different from the height position h2 of the first internal slit 244-1. For example, when the height h1 is higher than the height h3, the height position h2 is higher than the height position h4. Similarly, when the height h1 is lower than the height h3, the height position h2 is lower than the height position h4. This makes it easier to suppress electromagnetic mutual induction between the inter-block connection portion 202 and the first intra-block connection portion 204. Similarly, when the height h1 of the inter-block connection portion 202 and the height h5 of the second intra-block connection portion 206 are different, the height position h6 of the second parallel slit 310 may be different from the height position h2 of the second internal slit 244-2.

[0137] (Second Example) 7 is a diagram showing another example of the arrangement of the slits in each connection part. The inter-block connection part 202 of this example has a third inner slit 244-3, a fourth inner slit 244-4, and an end side slit 317 in addition to the configuration shown in FIG.

[0138] The end side slit 317 and the third inner slit 244-3 are provided in the overlapping region 351. The end side slit 317 and the third inner slit 244-3 are arranged closer to the end side 224 than the first inner slit 244-1. The end side slit 317 is a slit extending from the end side 224 in the Z-axis direction. The end side slit 317 in this example is provided in the end side 224 between the second connection end 232-2 and the second connection end 232-3. The third inner slit 244-3 is provided in connection with the end side slit 317 and extends in the Y-axis direction. The third inner slit 244-3 in this example is provided from the end side slit 317 to the inside of the second connection end 232-3. The inside refers to the side closer to the end side slit 242. With this configuration, the resistance value of the current path connected to the second connection end 232-3 can be further adjusted.

[0139] The first block internal connection portion 204 of this example has a third parallel slit 257 and a slit 259 in addition to the configuration shown in FIG. 5. The third parallel slit 257 and the slit 259 are provided in the overlapping region 351. The slit 259 and the third parallel slit 257 are arranged closer to the end side 252 than the first parallel slit 256. The slit 259 is a slit extending from the end side 252 in the Z-axis direction. The slit 259 of this example is provided in the end side 252 between the third connection end 254-2 and the third connection end 254-3. The third parallel slit 257 is provided in connection with the slit 259 and extends in the Y-axis direction. The third parallel slit 257 of this example is provided from the slit 259 to the inside of the third connection end 254-3. The inside refers to the side closer to the end side 255. With this configuration, the resistance value of the current path connected to the third connection end 254-3 can be further adjusted.

[0140] In the overlapping region 351, the slits of the inter-block connection portion 202 and the slits of the first intra-block connection portion 204 are preferably arranged in a similar manner. Arranged in a similar manner may refer to the slits being arranged so as to overlap when viewed from the X-axis direction. In addition, in the inter-block connection portion 202 and the first intra-block connection portion 204 of the overlapping region 351, the number of slits extending in the first direction (for example, the Y-axis direction) is preferably the same. In this example, the number of slits extending in the Y-axis direction in the inter-block connection portion 202 is two (the first internal slit 244-1 and the third internal slit 244-3), and the number of slits extending in the Y-axis direction in the first intra-block connection portion 204 is two (the first parallel slit 256 and the third parallel slit 257). Similarly, in the inter-block connection portion 202 and the first intra-block connection portion 204 of the overlapping region 351, the number of slits extending in a second direction (for example, the Z-axis direction) different from the first direction is preferably the same. In this example, there is one slit (end side slit 317) extending in the Z-axis direction in the inter-block connection portion 202, and there is one slit (slit 259) extending in the Z-axis direction in the first block internal connection portion 204. By similarly arranging the slits in the two opposing connection portions, it becomes easier to suppress electromagnetic mutual induction between the two connection portions.

[0141] In addition, in the overlapping region 352, the slits of the inter-block connection portion 202 and the slits of the second block internal connection portion 206 are preferably arranged in the same manner. The second block internal connection portion 206 of this example has a fourth parallel slit 309 in addition to the configuration shown in FIG. 5. The fourth parallel slit 309 is a slit extending in the Y-axis direction from the end side opposite to the end side 311. The height position of the fourth parallel slit 309 is between the second parallel slit 310 and the position 354. The fourth parallel slit 309 may extend to the inside of the fourth connection end portion 264-3, or may extend to the inside of the fourth connection end portion 264-2. The inside refers to the side closer to the end side 311. The fourth parallel slit 309 of this example extends to between the fourth connection end portion 264-3 and the fourth connection end portion 264-2.

[0142] The fourth internal slit 244-4 of the inter-block connection portion 202 is a slit extending in the Y-axis direction from the end side opposite to the end side slit 242 in the overlapping region 352. The height position of the fourth internal slit 244-4 is between the second internal slit 244-2 and the position 354. The fourth internal slit 244-4 may extend to the inside of the first connection end 231-3, or may extend to the inside of the first connection end 231-2. The inside refers to the side closer to the end side slit 242. The fourth internal slit 244-4 of this example extends between the first connection end 231-3 and the first connection end 231-2.

[0143] In the inter-block connection portion 202 and the second intra-block connection portion 206 of the overlapping region 352, the number of slits extending in the first direction (for example, the Y-axis direction) is preferably the same. In this example, the number of slits extending in the Y-axis direction in the inter-block connection portion 202 is two (the second inner slit 244-2 and the fourth inner slit 244-4), and the number of slits extending in the Y-axis direction in the second intra-block connection portion 206 is two (the second parallel slit 310 and the fourth parallel slit 309). In addition, the number of slits extending in the second direction (for example, the Z-axis direction) is preferably the same in the inter-block connection portion 202 and the second intra-block connection portion 206 of the overlapping region 352. In this example, the number of slits extending in the second direction (for example, the Z-axis direction) is zero in both the inter-block connection portion 202 and the second intra-block connection portion 206.

[0144] 8 is a diagram showing an example of the shape of the fourth block internal connection portion 209. The fourth block internal connection portion 209 has a plate-shaped portion 270, a plurality of fifth connection ends 274, and an external connection end 271. The plate-shaped portion 270 may be a plate-shaped member extending from above the second circuit portion 212-1 arranged at one end to above the second circuit portion 212-3 arranged at the other end among the plurality of second circuit portions 212 arranged side by side in the Y-axis direction. The plate-shaped portion 270 may be provided perpendicular to the XY plane. The plate-shaped portion 270 has an end side 272 facing the second circuit block CB2 and an end side 273 on the opposite side to the end side 272.

[0145] The fifth connection end 274 is provided for each second circuit portion 212. The fifth connection end 274 is provided protruding from the end side 272 of the plate-shaped portion 270 toward the second circuit portion 212, and is connected to the second circuit portion 212. Fig. 8 shows the fifth connection end 274 in a schematic manner. The fifth connection end 274 may have a portion extending parallel to the XY plane, or may have a curved portion.

[0146] The external connection end 271 may protrude upward from the edge 273. The external connection end 271 in this example functions as a third external connection terminal tm3 (M2).

[0147] The plate-like portion 270 of the fourth block internal connection portion 209 may or may not have a slit. When a slit is provided, the plate-like portion 270 may have a slit similar to that of the plate-like portion 250 shown in FIG. 5. The fourth block internal connection portion 209 in this example is located at a distance from another connection portion in the X-axis direction that is greater than 1 cm. The distance may be 2 cm or more. Therefore, the electromagnetic mutual induction between the fourth block internal connection portion 209 and the other connection portion is relatively small. Therefore, oscillation and noise can be suppressed without providing a slit that regulates the current path to prevent the current from flowing in the opposite direction.

[0148] 9 is a diagram showing an example of the shape of the third block internal connection portion 208. The third block internal connection portion 208 has a plate-shaped portion 280, a plurality of sixth connection ends 284, and an external connection end 281. The plate-shaped portion 280 may be a plate-shaped member extending from above the first circuit portion 211-1 arranged at one end to above the first circuit portion 211-3 arranged at the other end among the plurality of first circuit portions 211 arranged side by side in the Y-axis direction. The plate-shaped portion 280 may be provided perpendicular to the XY plane. The plate-shaped portion 280 has an end side 282 facing the first circuit block CB1 and an end side 283 on the opposite side to the end side 282.

[0149] The sixth connection end 284 is provided for each first circuit portion 211. The sixth connection end 284 is provided protruding from the end side 282 of the plate-shaped portion 280 toward the first circuit portion 211, and is connected to the first circuit portion 211. Fig. 9 shows the sixth connection end 284 diagrammatically. The sixth connection end 284 may have a portion extending parallel to the XY plane, or may have a curved portion.

[0150] The external connection end portion 281 may protrude upward from the end side 283. The external connection end portion 281 in this example functions as a second external connection terminal tm2 (M1).

[0151] The plate-shaped portion 280 of the third block internal connection portion 208 may or may not have a slit. When a slit is provided, the plate-shaped portion 280 may have a slit similar to that of the plate-shaped portion 250 shown in FIG. 5. In the example shown in FIG. 9, the current path between the external connection end 281 and the sixth connection end 284-2 is the shortest. The slit may be provided across a straight line connecting the external connection end 281 and the sixth connection end 284-2. The third block internal connection portion 208 of this example is at a distance of more than 1 cm in the X-axis direction from another connection portion. The distance may be 2 cm or more. Therefore, the electromagnetic mutual induction between the third block internal connection portion 208 and another connection portion is relatively small. Therefore, oscillation and noise can be suppressed without providing a slit that regulates the current path to prevent the current from flowing in the opposite direction.

[0152] Fig. 10 is a diagram showing the resistance of the inter-block connection 202 and the intra-block connection between the respective circuit parts. In Fig. 10, the resistance increased by providing the slits in the inter-block connection 202 and the first intra-block connection 204 is shown as Rs. Also, the resistance increased by providing the narrow region is shown as Rt.

[0153] As shown in FIG. 10, by providing a slit in the inter-block connection portion 202, a resistor Rs can be added to the first circuit portion 211-1 and the second circuit portion 212-3. This allows the resistance value of the current path between the multiple first circuit portions 211 and the multiple second circuit portions 212 to be uniform. Also, by providing a slit in the first block internal connection portion 204, a resistor Rs can be added to the third circuit portion 213-3. This allows the resistance value of the current path between the fourth external connection terminal tm4(N) and each of the third circuit portions 213 to be uniform. Also, by adding the resistor Rs, when the current flows in a U-shape or C-shape, the current can be uniformed between the inner circuit portion and the outer circuit portion. Also, by providing a slit in the second block internal connection portion 206 as shown in FIG. 5, the resistance adjustment becomes easier. In FIG. 10, the additional resistance due to the provision of a slit in the second block internal connection portion 206 is omitted.

[0154] (Third Example) 11 is a diagram showing another example of the inter-block connection portion 202. The inter-block connection portion 202 of this example differs from the inter-block connection portion 202 in the first or second embodiment in that it has a narrow region 410. The other structures are the same as those of the first or second embodiment.

[0155] The narrow region 410 is provided at the end opposite the narrow region 228 in the Y-axis direction. The narrow region 410 has a smaller width in the Z-axis direction than the other regions. The width in the Z-axis direction and the length in the Y-axis direction of the narrow region 410 may be the same as those of the narrow region 228. By providing the narrow region 228, the arrangement balance of the current paths in the inter-block connection portion 202 can be improved.

[0156] (Fourth Example) 12 is a diagram showing an example of a connecting portion 371 and a connecting portion 471 provided opposite to each other in the semiconductor device 100. In the first to third embodiments, two connecting portions are arranged opposite to one connecting portion. In this example, one connecting portion 471 is arranged opposite to one connecting portion 371. The lengths of the connecting portion 371 and the connecting portion 471 in the Y-axis direction may be the same. The semiconductor device of this example has a circuit arrangement different from the examples described in FIGS. 1 to 4D.

[0157] In this example, similarly to the first to third examples, it is preferable that the two opposing connection parts have slits arranged in the same manner, which makes it easier to pass currents in opposite directions in the two opposing connection parts and makes it easier to suppress oscillation and noise.

[0158] 12, each of the connection unit 371 and the connection unit 471 has the same configuration as the inter-block connection unit 202 in any one of the first to third embodiments. However, the configurations of the two connection units are not limited to this.

[0159] (Fifth Example) Fig. 13 is a diagram showing an example of a connecting portion 571. The connecting portion 571 can be used as any of the connecting portions described in Fig. 1 to Fig. 12. The structure of the connecting portion 571, other than the slits, is the same as any of the connecting portions described in Fig. 1 to Fig. 12.

[0160] The connection portion 571 has one or more branch slits 501 in addition to the slits in any of the connection portions described in FIG. 1 to FIG. 12. The branch slits 501 are slits extending in the Z-axis direction. The branch slits 501 may be provided extending in the Z-axis direction from a slit 575 extending in the Y-axis direction. The slits 575 correspond to any of the internal slits described in FIG. 1 to FIG. 12, or the first parallel slits 256, the third parallel slits 257, the second parallel slits 310, and the fourth parallel slits 311. The connection portion 571 may have a branch slit 501 extending from the slit 575 to the positive side of the Z-axis and a branch slit 501 extending to the negative side.

[0161] Moreover, the connection portion 571 may further have a branch slit 502 extending in the Z-axis direction from the end side 572 on the circuit portion side. Between the slit 575 and the end side 572, the branch slits 501 and the branch slits 502 may be alternately arranged along the Y-axis direction.

[0162] Moreover, the connection portion 571 may further have a branch slit 503 extending in the Z-axis direction from an end side 573 opposite to the end side 572. Between the slit 575 and the end side 573, the branch slits 501 and the branch slits 503 may be alternately arranged along the Y-axis direction. With this configuration, it becomes easier to adjust the length of each current path.

[0163] (Sixth Example) FIG. 14 is a diagram showing another example of the arrangement of a plurality of connection parts. In this embodiment, three or more connection parts are arranged side by side in the X-axis direction. The semiconductor device of this embodiment has a circuit arrangement different from that of the examples described in FIG. 1 to FIG. 4D. In the example of FIG. 14, in addition to the inter-block connection part 202, the first block internal connection part 204, and the second block internal connection part 206 described in the first or second embodiment, a connection part 604 and a connection part 606 are provided. The connection part 604 and the connection part 606 are formed of a plate-shaped conductive material and are connected to any of the circuit parts. In this example, the first block internal connection part 204 is an example of a first connection part, the inter-block connection part 202 is an example of a second connection part, and the connection part 604 is an example of a fourth connection part.

[0164] The inter-block connection portion 202 has a first main surface 305-1 and a second main surface 305-2. The first block intra-connection portion 204 and the second block intra-connection portion 206 are disposed facing the first main surface 305-1. The connection portion 604 and the connection portion 606 are disposed facing the second main surface 305-2. The first block intra-connection portion 204 and the connection portion 604 are disposed with the inter-block connection portion 202 in between. The second block intra-connection portion 206 and the connection portion 606 are disposed with the inter-block connection portion 202 in between. The connection portion 604 and the connection portion 606 may be disposed side by side along the Y axis.

[0165] The thickness in the X-axis direction of the first block internal connection portion 204 and the second block internal connection portion 206 is T3, the thickness of the inter-block connection portion 202 is T2, and the thickness of the connection portion 604 and the connection portion 606 is T1. Furthermore, the distance in the X-axis direction between the first block internal connection portion 204 and the second block internal connection portion 206 and the inter-block connection portion 202 is D2, and the distance in the X-axis direction between the connection portion 604 and the connection portion 606 and the inter-block connection portion 202 is D1. The distances D1 and D2 are, for example, 1 cm or less. The distances D1 and D2 may be 0.5 mm or less.

[0166] As described in the first or second embodiment, the direction of current in the current path in the first block internal connection portion 204 and the second block internal connection portion 206 is opposite to the direction of current in the opposing current path in the inter-block connection portion 202. Similarly, it is preferable that the direction of current in the current path in the connection portion 604 and the connection portion 606 is opposite to the direction of current in the opposing current path in the inter-block connection portion 202. That is, in the connection portions arranged in the X-axis direction, the direction of current in the opposing current paths may be alternately inverted. Also, in two connection portions (for example, the first block internal connection portion 204 and the connection portion 604) sandwiching the inter-block connection portion 202, the direction of current in the opposing current paths is the same. This makes it possible to suppress electromagnetic mutual induction between the respective connection portions.

[0167] Fig. 15 is a diagram showing an example of the arrangement of slits in each connection part shown in Fig. 14. The inter-block connection part 202, the first block internal connection part 204 and the second block internal connection part 206 may have the same structure as in the first embodiment or the second embodiment. The connection part 604 may have the same slits and terminal arrangement as the first block internal connection part 204. The connection part 606 may have the same slits and terminal arrangement as the second block internal connection part 206.

[0168] In this example, a current flows from the external connection end 261-1 of the second block internal connection portion 206 to the fourth connection end 264 of the second block internal connection portion 206. Similarly, a current flows from the external connection end 261-2 of the connection portion 606 to the fourth connection end 264 of the connection portion 606. The external connection end 261-1 and the external connection end 261-2 may be connected to, for example, an external power source. The current flowing to the fourth connection end 264 of the second block internal connection portion 206 and the current flowing to the fourth connection end 264 of the connection portion 606 both flow to the first connection end 231 of the inter-block connection portion 202. In the inter-block connection portion 202, a current flows from the first connection end 231 to the second connection end 232. The current flowing to the second connection end 232 branches and flows to the third connection end 254 of the first block internal connection portion 204 and the third connection end 254 of the connection portion 604. In the first block internal connection portion 204, a current flows from the third connection end portion 254 to the external connection terminal 251-1. In the connection portion 604, a current flows from the third connection end portion 254 to the external connection terminal 251-2. The external connection terminal 251-1 and the external connection terminal 251-2 may be connected to an external power supply.

[0169] 15, the current directions of the opposing current paths can be made opposite to each other. For example, the current direction of the current path 300-1 of the inter-block connection unit 202 is opposite to both the current direction of the current path 301-1 of the first intra-block connection unit 204 and the current direction of the current path 302-1 of the connection unit 604. In addition, the current direction of the current path 300-2 of the inter-block connection unit 202 is opposite to both the current direction of the current path 302-1 of the second intra-block connection unit 206 and the current direction of the current path 302-2 of the connection unit 606.

[0170] The widths W in the Z-axis direction of the slits extending in the Y-axis direction in each connection portion may be the same or different. In this example, the widths of the first inner slit 244-1 and the second inner slit 244-2 are W21. The width of the first parallel slit 256-1 in the first block connection portion 204 is W31, and the width of the first parallel slit 256-2 in the connection portion 604 is W11. The width of the second parallel slit 310-1 in the second block connection portion 206 is W32, and the width of the second parallel slit 310-2 in the connection portion 606 is W12. The widths W11, 21, 31, 12, and 32 may be the same.

[0171] In another example, the width W of the slit may differ depending on the amount of current (A) flowing through each connection part. As described above, in this example, the current flowing through the first block intra-connection part 204 and the connection part 604 flows to the inter-block connection part 202. Moreover, the current flowing through the second block intra-connection part 206 and the connection part 606 flows to the inter-block connection part 202. For this reason, the current flowing through the inter-block connection part 202 is larger than the current flowing through the other connection parts.

[0172] The width W21 of the first inner slit 244-1 and the second inner slit 244-2 in the inter-block connection portion 202 may be larger than any of the widths W11, 31, 12, and 32 of the slits in the other connection portions. This allows the width in the Z-axis direction of the current path 300 in the inter-block connection portion 202 to be reduced, making it easier to suppress electromagnetic mutual induction between the connection portions.

[0173] In another example, the width W of the slits in each connection part may be adjusted according to the thickness T of each connection part. The larger the thickness T of the connection part, the larger the width W of the slits may be. This makes it possible to suppress the variation in the cross-sectional area of ​​the current path between each connection part, and thus the variation in the resistance value. Therefore, by adjusting the magnitude of the current flowing in the opposite directions between the opposing current paths, it is possible to suppress electromagnetic mutual induction.

[0174] Although the present invention has been described above using the embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It is clear to those skilled in the art that various modifications and improvements can be made to the above embodiments. It is clear from the description of the claims that such modifications and improvements can also be included in the technical scope of the present invention. [Explanation of symbols]

[0175] 36 conductive pattern, 50 insulating substrate, 90 connection member, 100 semiconductor device, 110 case portion, 112 notch portion, 114 terminal arrangement surface, 116 protrusion portion, 120 base portion, 201 straight line, 202 inter-block connection portion, 204 first block internal connection portion, 206 second block internal connection portion, 208 third block internal connection portion, 209 fourth block internal connection portion, 210 connection region, 211 first circuit portion, 21 2 second circuit section, 213 third circuit section, 214 fourth circuit section, 220 plate-shaped portion, 222 external connection end, 224 end, 226 end, 228 narrow region, 230 current path, 231 first connection end, 232 second connection end, 242 end slit, 244 internal slit, 250 plate-shaped portion, 251 external connection end, 252 end, 253 end, 254 third connection end, 255 end, 2 56...first parallel slit, 257...third parallel slit, 259...slit, 260...plate-shaped portion, 261...external connection end, 262...edge, 263...edge, 264...fourth connection end, 270...plate-shaped portion, 271...external connection end, 272...edge, 273...edge, 274...fifth connection end, 280...plate-shaped portion, 281...external connection end, 282...edge, 283...edge, 284...sixth connection end, 300, 301, 30 2 current path, 303, 305, 307 main surface, 309 fourth parallel slit, 310 second parallel slit, 311 edge, 317 edge slit, 320, 321 plate-like portion, 351, 352 overlapping region, 354 position, 371 connection portion, 410 narrow region, 471 connection portion, 501, 502, 503 branch slit, 571 connection portion, 572, 573 edge, 575 slit, 604, 606 connection portion

Claims

1. A plurality of circuit portions; an AC output terminal for outputting an AC voltage; A first connection portion formed of a plate-shaped conductive material and connected to any one of the circuit portions; a second connection portion formed of a plate-shaped conductive material and connected to any one of the circuit portions and the AC output terminal; Equipped with The first connection portion and the second connection portion are disposed such that their respective principal surfaces face each other, Each of the first connection portion and the second connection portion is a circuit connection end portion connected to the circuit portion; a path regulation portion that regulates a current path on the main surface; having A direction of a current flowing through the current path between the path regulator and the circuit connection end is different between the first connection portion and the second connection portion. Semiconductor device.

2. A plurality of circuit portions; a first connection portion, a second connection portion, and a third connection portion each formed of a plate-shaped conductive material and connected to any one of the circuit portions; Equipped with the first connection portion, the second connection portion, and the third connection portion are disposed such that their respective principal surfaces face each other; the first connection portion is disposed opposite a first main surface of the second connection portion, the third connection portion is disposed opposite the first main surface of the second connection portion, Each of the first connection portion, the second connection portion, and the third connection portion is a circuit connection end portion connected to the circuit portion; a path regulation portion that regulates a current path on the main surface; having the first connection portion has a fourth external connection terminal to which a negative terminal of an external power supply is connected; the second connection portion has an AC output terminal that outputs an AC current, the third connection portion has a first external connection terminal to which a positive terminal of the external power supply is connected, A semiconductor device in which the direction of a current flowing through the current path between the path regulation portion and the circuit connection end portion is different between the first connection portion and the second connection portion, and is also different between the third connection portion and the second connection portion.

3. The second connection portion is an end edge slit provided from a circuit side end edge on which the circuit connection end is provided toward an inside of the second connection portion; a first internal slit connected to the end edge slit and extending along the circuit side end edge; a second internal slit provided in connection with the end edge slit and extending along the circuit side end edge and in a direction opposite to the first internal slit; having the first connection portion and the third connection portion are arranged side by side in a direction parallel to a main surface of the second connection portion, the first connection portion has a first parallel slit extending from an end side facing the third connection portion in a direction parallel to the first internal slit, The third connection portion has a second parallel slit extending from an end side facing the first connection portion in a direction parallel to the second internal slit. The semiconductor device according to claim 2 .

4. A plurality of circuit portions; a first connection portion, a second connection portion, and a fourth connection portion each formed of a plate-shaped conductive material and connected to any one of the circuit portions; Equipped with the first connection portion, the second connection portion, and the fourth connection portion are disposed such that their respective principal surfaces face each other; the first connection portion is disposed opposite a first main surface of the second connection portion, the fourth connection portion is disposed opposite to a second main surface of the second connection portion, Each of the first connection portion, the second connection portion, and the fourth connection portion is a circuit connection end portion connected to the circuit portion; a path regulation portion that regulates a current path on the main surface; having the first connection portion and the fourth connection portion are connected to an external power source; A semiconductor device in which the direction of a current flowing through the current path between the path regulation portion and the circuit connection end portion is different between the first connection portion and the second connection portion, and is also different between the fourth connection portion and the second connection portion.

5. the path regulators of the first connection portion, the second connection portion, and the fourth connection portion each have one or more first slits extending in a first direction; a current flowing through the first connection portion and a current flowing through the fourth connection portion flow through the second connection portion; The width of the first slit in the second connection portion is larger than both the width of the first slit in the first connection portion and the width of the first slit in the fourth connection portion. The semiconductor device according to claim 4.

6. A plurality of circuit portions; a first connection portion, a second connection portion, a third connection portion, a fourth connection portion and an inter-block connection portion, each of which is formed of a plate-shaped conductive material and connected to any one of the circuit portions; Equipped with a main surface of each of the first connection portion, the second connection portion, the third connection portion, and the fourth connection portion is disposed opposite to a main surface of the inter-block connection portion; the first connection portion and the second connection portion are disposed opposite a first main surface of the inter-block connection portion, the third connection portion and the fourth connection portion are disposed opposite to a second main surface of the inter-block connection portion, Each of the first connection portion, the second connection portion, the third connection portion, the fourth connection portion, and the inter-block connection portion is a circuit connection end portion connected to the circuit portion; a path regulation portion that regulates a current path on the main surface; having The direction of the current flowing through the current path between the path regulator and the circuit connection end is The first connection portion, the second connection portion, the third connection portion, and the fourth connection portion are different from the inter-block connection portion. Semiconductor device.

7. The first connection portion, the second connection portion, the third connection portion, and the fourth connection portion are connected to an external power source. The semiconductor device according to claim 6.

8. the path regulators of the first connection portion, the second connection portion, the third connection portion, the fourth connection portion, and the inter-block connection portion each have one or more first slits extending in a first direction, a current flowing in the first connection portion, a current flowing in the second connection portion, a current flowing in the third connection portion, and a current flowing in the fourth connection portion flow in the inter-block connection portion, The width of the first slit of the inter-block connection portion is larger than any of the width of the first slit of the first connection portion, the width of the first slit of the second connection portion, the width of the first slit of the third connection portion, and the width of the first slit of the fourth connection portion.

8. The semiconductor device according to claim 6 or 7.

9. A direction of a current flowing through the current path between the path regulator and the circuit connection end is opposite at the first connection portion and at the second connection portion. The semiconductor device according to claim 1 .

10. In each of the first connection portion and the second connection portion, the circuit connection end portion and the path regulation portion are arranged such that at least a part of a current flows around the path regulation portion, A direction in which a current flows around the path regulator is opposite to that in the first connection portion and the second connection portion. The semiconductor device according to claim 1 .

11. The first connection portion and the second connection portion have their respective main surfaces arranged in parallel. The semiconductor device according to claim 1 , wherein the first insulating layer is a first insulating layer.

12. the first connection portion and the second connection portion have respective principal surfaces arranged in parallel, the first connection portion and the second connection portion have an overlapping region in which they overlap in a direction perpendicular to the main surface, the path regulators of the first connection portion and the second connection portion each have one or more first slits extending in a first direction; In the overlapping region, the number of the first slits provided in the first connection portion is equal to the number of the first slits provided in the second connection portion. The semiconductor device according to claim 1 .

13. the path regulators of the first connection portion and the second connection portion each have one or more second slits extending in a second direction different from the first direction, In the overlapping region, the number of the second slits provided in the first connection portion is equal to the number of the second slits provided in the second connection portion. The semiconductor device according to claim 12.

14. an upper end of the first connection portion and an upper end of the second connection portion are disposed at the same height; In the overlapping region, the first slit provided in the first connection portion and the first slit provided in the second connection portion are disposed at the same height. The semiconductor device according to claim 12 or 13.

15. an upper end of the first connection portion is disposed at a higher position than an upper end of the second connection portion; In the overlapping region, the first slit provided in the first connection portion is disposed at a higher position than the first slit provided in the second connection portion. The semiconductor device according to claim 12 or 13.

16. The width of the first slit in the first connection portion is different from the width of the first slit in the second connection portion. The semiconductor device according to claim 12 .

17. The thickness of the first connection portion is greater than the thickness of the second connection portion, The width of the first slit in the first connection portion is larger than the width of the first slit in the second connection portion. The semiconductor device according to claim 16.

18. a current flowing through the first connection portion is greater than a current flowing through the second connection portion; The width of the first slit in the first connection portion is larger than the width of the first slit in the second connection portion. The semiconductor device according to claim 16.

19. the first connection portion is connected to either a positive terminal or a negative terminal of an external power supply; The second connection portion is not connected to either the positive terminal or the negative terminal. The semiconductor device according to claim 1 .

20. the first connection portion and the second connection portion have an overlapping region in which they overlap in a direction perpendicular to the main surface, The current flowing through the overlapping region of the first connection portion and the second connection portion is a current flowing between the positive electrode terminal and the AC output terminal, or a current flowing between the AC output terminal and the negative electrode terminal.

20. The semiconductor device according to claim 19.

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