Light emitting device and method for manufacturing the same

Abstract

To provide a light-emitting device capable of suppressing the generation of cracks and fractures in a resin member and a manufacturing method for the same.SOLUTION: A light-emitting device includes a substrate, a light-emitting element, an upper surface of which is a light-taking out surface, a wavelength conversion member containing a phosphor, arranged on the upper surface of the light-emitting element, and an outer resin member arranged on the side of the wavelength conversion member. The outer resin member includes a silicone resin and a silane coupling agent containing a reactive double bond group.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a light emitting device and a method for manufacturing the same. [Background technology]

[0002] Light-emitting devices that use light-emitting elements such as light-emitting diodes (LEDs) or laser diodes (LDs) are light sources with high conversion efficiency, and are used in a wide range of fields, such as light-emitting devices for general lighting such as for on-board use in automobiles and interior lighting, backlight light sources for image display devices that use liquid crystal, illumination, traffic signal lights, and light source devices for projectors.

[0003] Known light emitting devices using LEDs are those that use light emitting elements mounted on a substrate with wiring. In addition, development is underway on packages that have roughly the same size as the light emitting elements, so-called CSPs (Chip Scale Packages), and planar light emitting devices that densely mount multiple light emitting elements.

[0004] The light emitting device includes a light emitting element arranged on a substrate, a wavelength conversion member that converts the wavelength of light emitted from the light emitting element, and a resin member that seals these members to form a package. A resin composition is used as the resin member that covers the side and top of the light emitting element to form the package. For example, Patent Document 1 discloses a semiconductor light emitting device that is molded with a silicone-based resin member that contains wavelength conversion particles such as phosphors. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2011-233870 A Summary of the Invention [Problem to be solved by the invention]

[0006] An object of one aspect of the present invention is to provide a light emitting device capable of suppressing the occurrence of breakage, cracks, and the like in a resin member, and a method for manufacturing the same. [Means for solving the problem]

[0007] A light emitting device according to a first aspect of the present invention comprises a substrate, a light emitting element arranged on the substrate and having an upper surface as a light extraction surface, a wavelength conversion member containing a phosphor arranged on the upper surface of the light emitting element, and an outer resin member arranged on a side of the wavelength conversion member, wherein the outer resin member contains a silicone resin and a silane coupling agent containing a reactive double bond group.

[0008] A manufacturing method for a light emitting device according to a second aspect of the present invention includes the steps of arranging a plurality of light emitting elements, whose upper surfaces serve as light extraction surfaces, vertically and horizontally on an aggregate substrate; arranging a plurality of wavelength conversion members containing a phosphor on the upper surfaces of the plurality of light emitting elements; arranging a composition for an outer resin member on each side of the plurality of wavelength conversion members; curing the composition for the outer resin member to form an outer resin member; and cutting the outer resin member between adjacent light emitting elements and the aggregate substrate, wherein the composition for the outer resin member contains a silicone resin and a silane coupling agent containing a reactive double bond group. Effect of the Invention

[0009] According to one aspect of the present invention, it is possible to provide a light emitting device capable of suppressing the occurrence of breakage, cracks, and the like in a resin member, and a method for manufacturing the same. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional view of a light emitting device according to an embodiment. [Diagram 2] 1 is a schematic plan view of a light emitting device according to an embodiment. [Diagram 3] 1 is a flowchart showing an example of a method for manufacturing a light emitting device. [Figure 4A]5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 4B] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 4C] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 4D] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 4E] 1A to 1C are schematic plan views showing an example of a process for producing a light emitting device. [Diagram 5] 1 is a flowchart showing an example of a method for manufacturing a light emitting device. [Figure 6A] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 6B] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 6C] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 6D] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 6E] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 6F] 5A to 5C are schematic cross-sectional views showing an example of a process for producing a light emitting device. [Figure 6G] 1A to 1C are schematic plan views showing an example of a process for producing a light emitting device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] For example, since the CSP has a size almost equal to that of the light-emitting element, the amount of resin material molding the periphery of the light-emitting element and the wavelength conversion member is small, and therefore when the light-emitting element is energized, cracks may easily occur in the resin material formed around the light-emitting element and the wavelength conversion member due to the influence of heat generated when energized and moisture absorption due to the external environment. When the light-emitting element is energized, heat is emitted from the light-emitting element together with the light. In addition, heat is also emitted from the wavelength conversion member arranged on the light extraction surface on the upper surface of the light-emitting element together with the wavelength-converted light. The outer resin member arranged around the wavelength conversion member is easily affected by the repeated cycle of heat generated from the light-emitting element and the wavelength conversion member by energization and cooling of the light-emitting element and the wavelength conversion member by stopping the energization, and the adhesion between the wavelength conversion member and the outer resin member decreases. In addition, since the outer resin member is exposed to the external environment, it is also easily affected by humidity and the like. In particular, in the case of a small light-emitting device that is almost the same size as the light-emitting element, such as a CSP, the width of the outer resin member provided around the light-emitting element and the wavelength conversion member becomes narrow, and the amount of the outer resin member decreases according to the narrow width. As a result, the outer resin member is easily broken or cracked. In particular, when the adhesion between the wavelength conversion member and the outer resin member decreases and the outer resin member peels off from the wavelength conversion member, this peeled portion becomes the starting point for further breakage or cracks.

[0012] On the other hand, in order to suppress the influence of repeated heating and cooling from the light emitting element and the wavelength conversion member, it is conceivable to make the outer resin member softer, for example. However, when the outer resin member is softened, its adhesiveness increases, which may make it difficult to transport or pack it, resulting in poor mass productivity. In order to soften the outer resin member and suppress the effects of the external environment, it is conceivable to add, for example, a liquid light stabilizer of a hindered amine type to the outer resin member. However, since the hindered amine type light stabilizer is basic, there are cases in which the hardening of the outer resin member is inhibited.

[0013] Furthermore, it is also conceivable to form a softer outer resin member using a resin with a low Shore A hardness, for example, a Shore A hardness of less than 30. However, with such a resin, the outer resin member remains soft and sticky even after it is formed, which may make it difficult to transport or package, resulting in poor mass productivity.

[0014] Therefore, by using the outer resin member according to this embodiment, it is possible to improve the adhesion between the wavelength conversion member and the outer resin member without making the outer resin member softer, thereby suppressing breakage or cracks in the outer resin member.

[0015] The light-emitting device and its manufacturing method according to the present invention will be described below based on the embodiments. However, the embodiments shown below are merely examples for embodying the technical idea of ​​the present invention, and the present invention is not limited to the light-emitting device and its manufacturing method described below. The relationship between the color name and the chromaticity coordinate, and the relationship between the wavelength range of light and the color name of monochromatic light are in accordance with JIS Z8110. In this specification, the terms "sheet", "film", "layer", and the like are not distinguished from each other based only on the difference in the name. Therefore, for example, "film" is used to mean a member that can also be called a sheet, and "sheet" is used to mean a member that can also be called a film. In this specification, the terms "upper" and "lower" are also used to refer to the side from which light is extracted and the opposite side in a light-emitting device. For example, "upper" means the direction in which light is extracted, and "lower" means the opposite direction. Furthermore, "upper surface" means the surface on the side from which light is extracted, and "lower surface" means the surface on the opposite side. Furthermore, "side surface" means the surface perpendicular to the upper or lower surface.

[0016] The light emitting device will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view of the light emitting device according to the embodiment. FIG. 2 is a schematic plan view of the light emitting device according to the embodiment. However, for convenience of explanation, the size, thickness, etc. of the light emitting device and each member are merely exemplary and are exaggerated. In addition, for convenience of the explanation described later, the semiconductor element and the inner resin member are also illustrated, but it is also possible to adopt a form that does not use the semiconductor element and the inner resin member, as shown in FIG. 4D.

[0017] Light-emitting device The light emitting device 100 includes a substrate 20, a light emitting element 10 arranged on the substrate 20 and having an upper surface 10a as a light extraction surface, a wavelength conversion member 50 containing a phosphor arranged on the upper surface 10a of the light emitting element 10, and an outer resin member 40 arranged on the side of the wavelength conversion member 50. The outer resin member 40 includes a silicone resin and a silane coupling agent containing a reactive double bond group. The light emitting element 10 is flip-chip mounted on the substrate 20 via a conductive member 60 called a bump. The light emitting device 100 includes a semiconductor element 70 separate from the light emitting element 10. The semiconductor element 70 is also flip-chip mounted on the substrate 20 via the conductive member 60. The light emitting device 100 includes an inner resin member 30 arranged around the light emitting element 10. In a plan view, the area of ​​the wavelength conversion member 50 is preferably larger than the area of ​​the upper surface 10a of the light emitting element 10. The upper surface 50a of the wavelength conversion member 50 becomes the light extraction surface of the light emitting device 100. The wavelength conversion member 50 is preferably bonded to the upper surface 10a of the light emitting element 10 via the light guide member 80. The light guide member 80 continuously covers the side surface 10b and the upper surface 10a of the light emitting element 10. The inner resin member 30 is disposed on the side of the light emitting element 10, in contact with at least a part of the light guide member 80, and covers at least a part of the side surface 70b of the semiconductor element 70. The outer resin member 40 is disposed on the side of the wavelength conversion member 50, on the inner resin member 30, and on the semiconductor element 70, and embeds the semiconductor element 70. The thickness T of the outer resin member 40 refers to the thickness in the vertical direction to the substrate 20. When the inner resin member 30 is provided, the thickness T refers to the difference obtained by subtracting the height of the upper surface of the inner resin member 30 from the height of the upper surface of the outer resin member 40 in the vertical direction to the substrate 20. The substrate 20 may be a piece that has been individually cut in advance, or may be a piece that has been individually cut from the collective substrate 20a in a manufacturing method described later, and the same reference numerals are used.

[0018] In the light emitting device 100, the outer resin member 40 constitutes the outer shape of the light emitting device 100. When the upper surface 50a of the wavelength conversion member 50 is rectangular, when the size of the shortest side of the upper surface 50a of the wavelength conversion member 50 is taken as 1, the narrowest width W from an end of the upper surface 50a of the wavelength conversion member 50 to an end of the outer shape of the light emitting device 100 constituted by the outer resin member 40 can be within a range of 0.10 mm or more and 0.30 mm or less.

[0019] Outer resin material The outer resin member is preferably disposed to the side of the wavelength conversion member, and the upper surface of the outer resin member is preferably flush with the upper surface of the wavelength conversion member. In other words, the outer resin member is preferably disposed so that the height of at least a part of the upper surface of the outer resin member is the same as the light extraction surface of the wavelength conversion member. This makes it possible to provide a light emitting device having a substantially rectangular parallelepiped shape. In addition, a part of the upper surface of the outer resin member may have a "sink". For example, the part of the outer resin member that is in contact with the side surface of the wavelength conversion member may be at the same height as the light extraction surface of the wavelength conversion member, and the part that is not in contact with the side surface of the wavelength conversion member may be at a lower height than the light extraction surface of the wavelength conversion member. This is because a depression called a "sink" may occur on the upper surface of the outer resin member as the resin constituting the outer resin member cures and shrinks.

[0020] The outer resin member according to the present embodiment includes a silicone resin and a silane coupling agent containing a reactive double bond group. The alkoxy group contained in the silane coupling agent chemically bonds with the wavelength conversion member, and the reactive double bond group contained in the silane coupling agent chemically bonds with the resin in the outer resin member. This significantly increases the adhesion between the wavelength conversion member and the outer resin member. In addition, due to the flexibility of the silicone resin, even if the light emitting element and the wavelength conversion member are repeatedly heated and cooled by turning on and off the current, the occurrence of cracks and breaks in the outer resin member can be suppressed. In other words, by setting the hardness of the silicone resin within a predetermined range, it is possible to have flexibility while suppressing adhesion, making it easier to transport and pack, and improving mass productivity. Furthermore, even if the narrowest width W to the edge of the outer shape of the light emitting device constituted by the outer resin member is within the range of 0.10 mm or more and 0.30 mm or less, the occurrence of cracks and breaks in the outer resin member can be suppressed by using an outer resin member containing a silicone resin and a silane coupling agent containing a reactive double bond group.

[0021] The silane coupling agent includes a siloxane compound. The siloxane compound has an alkoxy group bonded to silicon and a reactive double bond group in one molecule, and the alkoxy group bonded to silicon chemically bonds with the wavelength conversion member containing an inorganic material, and the reactive double bond group chemically bonds with the silicone resin in the outer resin member, improving the adhesion between the wavelength conversion member and the outer resin member. Even when the silane coupling agent is added to the silicone resin, the hardness of the outer resin member obtained by curing the silicone resin does not decrease, and a relatively high hardness is maintained, and the occurrence of breakage or cracks in the outer resin member can be suppressed.

[0022] The silane coupling agent preferably has a vinyl group, an allyl group, or a (meth)acryloyl group as a reactive double bond group. These reactive double bond groups are also excellent in curability, so that the wavelength conversion member and the outer resin member are chemically bonded to each other by the functional group of the silane coupling agent without decreasing the hardness of the outer resin member, thereby increasing the adhesion, suppressing the peeling of the wavelength conversion member and the outer resin member, and suppressing the occurrence of cracks and breakage. The (meth)acryloyl group means either one or both of an acryloyl group and a methacryloyl group. The silane coupling agent preferably has at least one alkoxy group selected from the group consisting of a methoxy group and an ethoxy group, two or more of which may be three or more in one molecule. The reactive double bond group contained in the silane coupling agent may be bonded to silicon contained in the siloxane compound by an alkyl group having 5 to 20 carbon atoms, taking into consideration compatibility with the silicone resin contained in the outer resin member.

[0023] Specific examples of the silane coupling agent include vinyltrimethoxysilane, vinyltriethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-acryloxypropyltrimethoxysilane, 7-octenyltrimethoxysilane, and 8-methacryloxyoctyltrimethoxysilane.

[0024] In order to increase the adhesion between the wavelength conversion member and the outer resin member and suppress peeling of the outer resin member, the content of the silane coupling agent is preferably in the range of 0.1 parts by mass to 5 parts by mass to 100 parts by mass of the silicone resin. The amount of the silane coupling agent may be in the range of 0.2 parts by mass to 4 parts by mass, 0.3 parts by mass to 3 parts by mass, 0.4 parts by mass to 2 parts by mass, or 0.5 parts by mass to 1 part ...

[0025] The silicone resin is preferably an addition reaction type silicone resin obtained from dimethylpolysiloxane and / or modified dimethylpolysiloxane containing at least two alkenyl groups bonded to silicon atoms in one molecule, and organohydrogenpolysiloxane containing at least two hydrogen atoms bonded to silicon atoms in one molecule. The addition reaction type silicone resin is desirable because it has little cure shrinkage and therefore causes less damage to other light-emitting device components during or after cure.

[0026] The Shore A hardness of the silicone resin contained in the outer resin member is preferably in the range of 30 to 80, more preferably in the range of 40 to 80, even more preferably in the range of 55 to 80, and even more preferably in the range of 60 to 75. The Shore A hardness of the silicone resin contained in the outer resin member can be measured using a durometer type A in accordance with JIS K6253. If the silicone resin contained in the outer resin member has a Shore A hardness in the range of 30 to 80, it has excellent rubber properties (toughness, elongation), so that if peeling from the wavelength conversion member is suppressed, it flexibly expands or contracts in response to heat dissipation or cooling from the wavelength conversion member, and cracks can be suppressed.

[0027] The outer resin member preferably further contains a filler, and examples of the filler include at least one selected from the group consisting of titanium dioxide, silicon dioxide, zirconium dioxide, yttria-stabilized zirconia, aluminum oxide, and calcium carbonate. When the outer resin member contains a filler, the viscosity of the composition for the outer resin member can be adjusted, and when the filler is at least one selected from the group consisting of titanium dioxide, silicon dioxide, zirconium dioxide, aluminum oxide, and calcium carbonate, the filler is a light-reflecting substance, and the outer resin member can reflect light emitted from the light-emitting element and wavelength-converted light emitted from the wavelength conversion member, and emit light in the direction of the upper surface of the light-emitting element, which is the light emission surface.

[0028] The content of the filler contained in the outer resin member is preferably in the range of 20 to 80 parts by mass, and may be in the range of 50 to 70 parts by mass, relative to 100 parts by mass of silicone resin. If the content of the filler contained in the outer resin member is in the range of 20 to 80 parts by mass, relative to 100 parts by mass of silicone resin, the viscosity of the composition for the outer resin member for constituting the outer resin member can be appropriately adjusted, and the light emitted from the light emitting element and the wavelength-converted light emitted from the wavelength conversion member can be reflected by the outer resin member.

[0029] The thickness T of the outer resin member is preferably in the range of 50 μm or more and 600 μm or less. If the thickness T of the outer resin member is in the range of 50 μm or more and 600 μm or less, the adhesion with the wavelength conversion member can be improved, so that peeling can be suppressed and the occurrence of cracks and breakage can be suppressed. The thickness T of the outer resin member varies depending on the thickness of the semiconductor element and the thickness of the inner resin member. In addition, the thickness T of the outer resin member varies depending on the "sink" on the upper surface. From the viewpoint of more effectively suppressing cracks and cracks, the thickness T of each part of the outer resin member is 50 μm or more, more preferably 80 μm or more, and even more preferably 120 μm or more. On the other hand, from the viewpoint of making the light emitting device thinner and smaller, the thickness T of each part of the outer resin member is 600 μm or less, more preferably 500 μm or less, and even more preferably 450 μm or less. If it is in this range, the adhesion between the wavelength conversion member and the outer resin member is improved, peeling of the outer resin member from the wavelength conversion member can be suppressed, and cracks and breakage can be suppressed.

[0030] substrate The substrate is preferably made of an insulating material that is difficult for light from the light emitting element or external light to penetrate. Examples of the material include ceramics such as alumina and aluminum nitride, and resins such as phenol resin, epoxy resin, polyimide resin, bismaleimide triazine resin (BT resin), and polyphthalamide (PPA) resin. When using a resin, an inorganic filler made of glass fiber, silicon oxide, titanium dioxide, aluminum oxide, or the like may be mixed into the resin as necessary. By including an inorganic filler in the substrate, it is possible to improve the mechanical strength, reduce the thermal expansion coefficient, and improve the light reflectance.

[0031] Light emitting element The light-emitting element may be a semiconductor light-emitting element such as a light-emitting diode (LED) or a laser diode (LD). A light-emitting element that emits light of any wavelength may be selected depending on the application. For example, a nitride semiconductor (In) capable of emitting light of a short wavelength that can efficiently excite the phosphor contained in the wavelength conversion material may be used. X Al Y Ga1-X-Y N, 0≦X, 0≦Y, X+Y≦1). The light emission wavelength can be selected from various types depending on the material of the semiconductor layer and its mixed crystal degree. A light emitting device can be used in which a pair of electrodes, a p electrode and an n electrode, is formed on the lower surface opposite to the upper surface that serves as the light extraction surface. The light emitting device preferably has an emission peak wavelength within the range of 380 nm to 500 nm, more preferably has an emission peak wavelength within the range of 400 nm to 495 nm, and further preferably has an emission peak wavelength within the range of 420 nm to 490 nm. The light emitting device is electrically connected to the substrate via a conductive member.

[0032] Wavelength conversion material The wavelength conversion member contains a phosphor. The wavelength conversion member may contain an inorganic material. The wavelength conversion member preferably contains a ceramic composite containing a phosphor and an inorganic material. The wavelength conversion member may be a single layer of a phosphor layer made of a ceramic composite containing a phosphor and an inorganic material, or may be a laminate of a phosphor layer made of a ceramic composite containing a phosphor and an inorganic material and a translucent layer made of at least one material selected from the group consisting of resin, glass, and inorganic substances. The ceramic composite containing a phosphor and an inorganic material may contain one type of first phosphor, or may contain another type of second phosphor having a different composition from the first phosphor. The first phosphor layer made of a first ceramic composite containing one type of first phosphor and an inorganic material, a second phosphor layer made of a second ceramic composite containing another type of second phosphor having a different composition from the first phosphor and an inorganic material, and a translucent layer not containing a phosphor may be laminated. The translucent layer may be a plate-shaped body made of an inorganic oxide similar to the inorganic oxide contained in the ceramic composite described later.

[0033] The phosphor contained in the wavelength conversion member preferably contains a rare earth aluminate phosphor, and the inorganic material contained in the wavelength conversion member preferably contains an inorganic oxide. The phosphor may be a rare earth aluminate phosphor as the first phosphor described above. An example of a rare earth aluminate phosphor is an yttrium aluminum garnet phosphor (YAG phosphor). The YAG phosphor refers to a phosphor that has a garnet structure and is activated with at least one element selected from the group consisting of rare earth elements. The rare earth aluminate phosphor is, for example, Y. 3 (Al,Ga) 5 O 12 : Ce, Lu 3 (Al,Ga) 5 O 12 :Ce, (Re 1-x Sm x ) 3 (Al 1-y Ga y ) 5 O 12 Examples of such phosphors include phosphors having a composition represented by the formula: Re is at least one element selected from the group consisting of Y, Gd, and La, and x and y satisfy 0≦x<1 and 0≦y≦1, respectively. In this specification, in a composition formula showing the composition of a phosphor, a plurality of elements separated by a comma (,) means that at least one element of the plurality of elements is contained in the composition formula, and two or more elements may be contained in combination. In addition, in a composition formula showing the composition of a phosphor, the part before the colon (:) represents the elements constituting the host crystal and their molar ratio, and the part after the colon (:) represents an activator element. The "molar ratio" represents the molar amount of an element in 1 mole of the composition of the phosphor.

[0034] The phosphor may contain a phosphor having a different composition in addition to the rare earth aluminate phosphor. The phosphor may be a phosphor having a different composition from the rare earth aluminate phosphor as the second phosphor described above. The phosphor having a different composition from the rare earth aluminate phosphor may be a nitrogen-containing calcium aluminosilicate phosphor (e.g., CaO-Al) activated with europium and / or chromium. 2 O 3 -SiO 2:(Eu, Cr), silicate-based phosphors activated with europium (e.g., (Sr, Ba) 2 SiO 4 :Eu), β-sialon-based phosphors (e.g., Si 6-z Al z O z N 8-z :Eu(0 < z < 4.2)), nitride-based phosphors (e.g., CaAlSiN 3 :Eu (CASN phosphor), (Sr, Ca)AlSiN 3 :Eu (SCASN phosphor)), fluoride-based phosphors activated with manganese (e.g., K 2 SiF 6 :Mn), sulfide-based phosphors, etc. Examples of nitride-based phosphors include L u M v N ((2 / 3)u+(4 / 3)v) :R or L u M v O w N ((2 / 3)u+(4 / 3)v-(2 / 3)w) :R (L is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Zn, which is a Group 2 or Group 12 element; M is at least one element selected from the group consisting of C, Si, Ge, Sn, Ti, Zr, and Hf, which is a Group 4 or Group 14 element; R is at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Lu; u, v, w satisfy 0.5 ≤ u ≤ 3, 1.5 ≤ v ≤ 8, 0 < w ≤ 3). Phosphors having a composition represented by this are included.)

[0035] The inorganic material contained in the wavelength conversion member is preferably an inorganic oxide having translucency that transmits light from the light-emitting element and light wavelength-converted by the phosphor. Examples of inorganic oxides include SiO 2 , Al 2 O 3 , ZrO 2 , MgO, TiO 2 , CeO 2 , ZnO, SnO 2 and Y 2 O 3In the present specification, the term "translucent" means that 60% or more of the light emitted from the light emitting element and the light whose wavelength has been converted by the phosphor is transmitted through the material, and examples of the material having translucency include those having a transmittance of 70% or more, 80% or more, or 90% or more of the light emitted from the light emitting element. When the phosphor contained in the wavelength conversion member is a rare earth aluminate phosphor, the inorganic material is Al 2 O 3 It is preferred that the compound contains

[0036] Semiconductor Device The light emitting device preferably includes a semiconductor element on the substrate, separate from the light emitting element. The semiconductor element is preferably disposed adjacent to the light emitting element on the substrate. Examples of the semiconductor element include a transistor for controlling the light emitting element, a capacitor, and a protection element such as a Zener diode that is turned on when a voltage equal to or higher than a specified voltage is applied. The protection element is, for example, a semiconductor element having a pair of electrodes, a p-electrode and an n-electrode, on one of two opposing surfaces facing the substrate, similar to the light emitting element. The semiconductor element is electrically connected to the substrate via a conductive member, similar to the light emitting element. The height of the semiconductor element connected to the substrate via the conductive member is preferably lower than the combined height of the light emitting element and the wavelength conversion member connected to the substrate via the conductive member. By completely burying the semiconductor element in the outer resin member, the upper surface of the outer resin member can be raised, thereby suppressing a recess (sink mark) that occurs on the upper surface of the outer resin member.

[0037] Conductive material The conductive member may be a bump, and the material of the bump may be Au or its alloy, eutectic solder (Au-Sn), Pb-Sn, lead-free solder, etc. The conductive member is not limited to a bump, and may be, for example, a conductive paste.

[0038] An inner resin member may be provided between the light-emitting element and the substrate, between the semiconductor element and the substrate, or between the conductive member and the conductive member. The inner resin member is a member for protecting the light-emitting element, the semiconductor element, the conductive member, etc. arranged on the substrate from dust, moisture, external force, etc. Examples of materials for the inner resin member include silicone resin, epoxy resin, urea resin, etc. Furthermore, these resins may contain colorants, light diffusing materials, fillers, etc. as necessary.

[0039] Light guide member A light guide member is interposed between the light emitting element and the wavelength conversion member, and the light emitting element and the wavelength conversion member are bonded by the light guide member. The light guide member is preferably made of a material that can optically connect the light emitting element and the wavelength conversion member. The material constituting the light guide member may be at least one resin selected from the group consisting of epoxy resin, silicone resin, phenol resin, and polyimide resin.

[0040] Inner resin material The light emitting device preferably includes an inner resin member around the light emitting element up to the height of the upper surface of the light emitting element or the lower surface of the wavelength conversion member. By disposing the inner resin member around the side surface of the light emitting element, the light extraction efficiency is improved, and a light emitting device with high brightness can be provided. The resin material constituting the inner resin member may include at least one resin material selected from the group consisting of silicone resin, modified silicone resin, epoxy resin, and modified epoxy resin, and may be a hybrid resin containing two or more resins. The resin material constituting the inner resin member may include the same silicone resin as the outer resin member. The inner resin member preferably includes the same filler as the outer resin member. Specifically, the filler may include at least one selected from the group consisting of titanium dioxide, silicon dioxide, zirconium dioxide, yttria-stabilized zirconia, aluminum oxide, and calcium carbonate.

[0041] Method for manufacturing a light emitting device The manufacturing method of the light emitting device will be described with reference to the drawings. FIG. 3 shows a flow chart showing an example of the manufacturing method of the light emitting device. FIG. 4A to FIG. 4D are schematic cross-sectional views showing an example of the steps of the manufacturing method of the light emitting device according to the embodiment. FIG. 4E is a schematic plan view showing an example of the steps of the manufacturing method of the light emitting device according to the embodiment. Each member shown in FIG. 4A to FIG. 4E can be the same as each member used in the above-mentioned light emitting device.

[0042] The method for manufacturing the light emitting device includes step S101 of arranging a plurality of light emitting elements vertically and horizontally, step S103 of arranging a plurality of wavelength conversion members, step S105 of arranging a composition for an outer resin member, step S106 of forming an outer resin member, and step S107 of cutting the outer resin member and the aggregate substrate. The details are described below.

[0043] The method for manufacturing a light emitting device includes a step (S101) of arranging a plurality of light emitting elements, whose upper surfaces serve as light extraction surfaces, lengthwise and crosswise on an aggregate substrate. FIG. 4A shows a process of arranging a plurality of light emitting elements 10 on the collective substrate 20a in a row and column manner, with the upper surface being the light extraction surface. Here, arranging a plurality of light emitting elements 10 on the collective substrate 20a in a row and column manner includes arranging the light emitting elements 10 in a row and column manner in a row and column manner, and arranging the light emitting elements 10 in various two-dimensional patterns such as a checkered pattern or a lattice pattern. Here, the light emitting elements 10 arranged in a row and column manner are taken as an example for explanation, and the row direction is sometimes called the row direction and the column direction is sometimes called the column direction. A conductive pattern insulated and separated into positive and negative electrodes is formed on the collective substrate 20a, and the light emitting elements 10 are flip-chip mounted on the conductive pattern of the collective substrate 20a via a conductive member 60 called a bump. By flip-chip mounting, the light emitting elements 10 are mechanically and electrically connected to the collective substrate 20a. When mounting, the conductive member 60 may be provided on the collective substrate 20a side, or may be provided on the light emitting elements 10 or the semiconductor element 70 side described later. An inner resin member may be filled between the light emitting elements 10 and the collective substrate 20a. This includes not only the case where the light emitting elements 10 are directly mounted on the collective substrate 20a, but also the case where the light emitting elements 10 are mounted on the collective substrate 20a via a submount substrate or the like.

[0044] The method for manufacturing a light emitting device includes a step (S103) of arranging a plurality of wavelength conversion members containing a phosphor on the upper surfaces of a plurality of light emitting elements. 4B shows a process of arranging a plurality of wavelength conversion members 50 on upper surfaces 10a of a plurality of light emitting elements 10 via light guiding members 80. The light guiding members 80 bond the light emitting elements 10 and the wavelength conversion members 50 to optically connect them. The light guiding members 80 can be arranged on the upper surfaces 10a of the light emitting elements 10 by a known method such as a printing method, a spraying method, a molding method, or a dropping method using a composition for a light guiding member. The wavelength conversion members 50 can be arranged on the composition for a light guiding member and cured to bond the light emitting elements 10 and the wavelength conversion members 50.

[0045] The method for manufacturing a light emitting device includes a step (S105) of arranging a composition for an outer resin member on each side of a plurality of wavelength conversion members, and a step (S106) of curing the composition for the outer resin member to form the outer resin member. FIG. 4C shows a process of disposing the composition 40a for the outer resin member on the side of the wavelength conversion member 50, and a process of curing the composition 40a for the outer resin member to form the outer resin member 40. In FIG. 4C, the outer resin member 40 and the composition 40a for the outer resin member have different names depending on the curing, so two reference symbols are given to the same member. The composition 40a for the outer resin member contains a silicone resin and a silane coupling agent containing a reactive double bond group. The composition 40a for the outer resin member can use the above-mentioned silicone resin and the above-mentioned silane coupling agent, and can use the above-mentioned composition for the outer resin member. The composition 40a for the outer resin member is disposed so as to cover the side surface 50b of the wavelength conversion member 50, so that the alkoxy group contained in the silane coupling agent contained in the composition 40a for the outer resin member chemically bonds with the inorganic material contained in the wavelength conversion member. In addition, the reactive double bond group contained in the silane coupling agent chemically bonds with the silicone resin contained in the composition 40a for the outer resin member. This significantly improves the adhesion between the wavelength conversion member 50 and the outer resin member 40, making it possible to prevent the wavelength conversion member 50 and the outer resin member 40 from peeling off from each other.

[0046] In the step of disposing the composition for outer resin member 40a, the composition for outer resin member 40a can be disposed by, for example, an injection molding method, a dripping method, a printing method, a molding method, a compression molding method, or the like. In the step of disposing the composition for outer resin member 40a, it is preferable to dispose the composition for outer resin member 40a by dripping between a plurality of adjacent wavelength conversion members 50. By disposing the composition for outer resin member 40a by dripping between the wavelength conversion members 50, the composition for outer resin member 40a is positioned by the side surface 50b of the wavelength conversion member 50. For the purpose of positioning, it is not necessary to dispose, for example, a dam or the like. When disposing the composition for outer resin member 40a by dripping between a plurality of wavelength conversion members 50, for example, a resin discharge device can be used. The composition for outer resin member 40a can be disposed between a plurality of wavelength conversion members 50 by moving the nozzle while dripping the composition for outer resin member 40a from the nozzle at the tip of the resin discharge device filled with the composition for outer resin member 40a.

[0047] The composition for the outer resin member 40a can be cured by heating to form the outer resin member 40. The heating temperature and time vary depending on the curing temperature of the composition for the outer resin member 40a, but for example, the composition for the outer resin member 40a can be cured by heating at a temperature of 50° C. or higher and 200° C. or lower for 1 hour to 20 hours. The composition for the outer resin member 40a may be heated in two stages, for example, first heating at a temperature of 50° C. or higher and lower than 100° C. for 1 hour to 10 hours, and then second heating at a temperature of 100° C. or higher and 200° C. for 1 hour to 10 hours.

[0048] The method for manufacturing the light emitting device includes a step (S107) of cutting the outer resin member and the assembly substrate between adjacent light emitting elements. 4D or 4E shows cutting lines 12 in the step of cutting the outer resin member 40 and the aggregate substrate 20a. The outer resin member 40 and the aggregate substrate 20a are cut along the cutting lines 12 in at least one of the row direction and column direction in a plan view so as to include at least one light emitting element 10. This allows individual light emitting devices to be separated from a group of multiple light emitting devices, and the light emitting devices can be manufactured.

[0049] A method for manufacturing a light emitting device according to a different embodiment will be described with reference to the drawings. FIG. 5 shows a flow chart showing an example of a method for manufacturing a light emitting device. Also, FIGS. 6A to 6F are schematic cross-sectional views showing an example of a process of a method for manufacturing a light emitting device according to an embodiment. FIG. 6G is a schematic plan view showing an example of a process of a method for manufacturing a light emitting device according to an embodiment. Each member shown in FIGS. 6A to 6G can be the same as each member used in the above-mentioned light emitting device.

[0050] In a different embodiment, the method for producing a light emitting device includes step S201 of arranging a plurality of light emitting elements vertically and horizontally, step S202 of arranging a plurality of semiconductor elements, step S203 of arranging a plurality of wavelength conversion members, step S204 of arranging a composition for an inner resin member, step S205 of arranging a composition for an outer resin member, step S206 of forming an inner resin member and an outer resin member, and step S207 of cutting the outer resin member, the inner resin member, and the assembly substrate. However, since the method for producing a light emitting device according to a different embodiment is almost the same as the method for producing a light emitting device according to the above embodiment except that the semiconductor element 70 and the composition 30a for an inner resin member are used, the explanation of steps S201, S203, and S205 may be omitted.

[0051] The method for manufacturing a light-emitting device includes a step (S202) of arranging a plurality of semiconductor elements, separate from the light-emitting elements, between adjacent light-emitting elements in either the horizontal or vertical direction of the light-emitting elements arranged vertically and horizontally, during the step of arranging a plurality of light-emitting elements, or before or after the step of arranging a plurality of light-emitting elements. FIG. 6A shows a process of arranging a plurality of light emitting elements 10 vertically and horizontally on the collective substrate 20a. FIG. 6B shows a process of arranging a plurality of semiconductor elements 70 vertically and horizontally on the collective substrate 20a. FIG. 6C shows a process of arranging a plurality of wavelength conversion members 50 on the upper surface 10a of a plurality of light emitting elements 10 via a light guide member 80. In the process of arranging a plurality of light emitting elements 10 vertically and horizontally on the collective substrate 20a, or before or after the process of arranging a plurality of light emitting elements 10 vertically and horizontally, a plurality of semiconductor elements 70 other than the light emitting elements 10 are arranged between adjacent light emitting elements 10 in either the row direction or the row direction of the light emitting elements arranged vertically and horizontally. The semiconductor elements 70 are flip-chip mounted on the conductive pattern of the collective substrate 20a via conductive members 60 called bumps, similar to the light emitting elements 10. An inner resin member may be filled between the semiconductor elements 70 and the collective substrate 20a.

[0052] The method for producing a light emitting device includes a step (S204) of arranging an inner resin member composition around the light emitting elements after the step of arranging the plurality of light emitting elements and before the step of arranging the outer resin member composition. FIG. 6D shows a process of arranging the inner resin member composition 30a around the light emitting element 10 after the process of arranging a plurality of light emitting elements 10 vertically and horizontally and before the process of arranging the outer resin member composition. In FIG. 6D and FIG. 6E, the inner resin member 30 and the inner resin member composition 30a have different names depending on the curing, so two reference symbols are attached to the same member. In the process of arranging the inner resin member composition 30a, it is preferable to cover at least a part of the side surface of the semiconductor element 70 with the inner resin member composition 30a. The semiconductor element 70 may be arranged so that not only the side surface but also at least a part of the upper surface of the semiconductor element 70 is covered with the inner resin member composition 30a. By arranging the inner resin member 30 around the light emitting element 10 and the semiconductor element 70, the amount of light emitted from the light emitting element 10 that is absorbed by the semiconductor element 70 and the adjacent light emitting element 10 is reduced, and a high-output light emitting device can be provided. The composition for the inner resin member 30a can be arranged by, for example, an injection molding method, a dropping method, a printing method, a molding method, a compression molding method, or the like. In order to arrange the composition for the inner resin member 30a around the light emitting element 10 and the semiconductor element 70, it is preferable to arrange the composition for the inner resin member 30a by a dropping method. The composition for the inner resin member 30a is heated and cured after being arranged around the light emitting element 10 and the semiconductor element 70. In addition, the composition for the inner resin member 30a may be heated and temporarily cured after being arranged around the light emitting element 10 and the semiconductor element 70, and then the composition for the outer resin member 40a is arranged, and then the composition for the inner resin member 30a is heated together with the composition for the outer resin member 40a and cured. In addition, the composition for the inner resin member 30a may be arranged around the light emitting element 10 and the semiconductor element 70, and then the composition for the outer resin member 40a is arranged, and then the composition for the inner resin member 30a is heated together with the composition for the outer resin member 40a and cured.

[0053] The method for manufacturing a light emitting device includes a step (S205) of arranging a composition for an outer resin member on each side of a plurality of wavelength conversion members, and a step (S206) of curing the composition for the inner resin member and the composition for the outer resin member to form the inner resin member and the outer resin member. FIG. 6E shows a process of disposing the composition for outer resin member 40a on each side of a plurality of wavelength conversion members 50, and curing the composition for inner resin member 30a and the composition for outer resin member 40a to form the inner resin member 30 and the outer resin member 40. In the process of disposing the composition for outer resin member 40a, it is preferable to dispose the composition for outer resin member 40a so as to cover the side surface 50b of the wavelength conversion member 50 and to cover the upper surface 70a of the semiconductor element 70. The composition for outer resin member 40a may be disposed so as to bury the semiconductor element 70. By disposing the composition for outer resin member 40a so as to cover the upper surface 70a of the semiconductor element 70, the upper surface of the composition for outer resin member 40a is raised, and a dent (sink mark) occurring on the upper surface of the outer resin member 40 due to the cure shrinkage of the composition for outer resin member 40a can be suppressed.

[0054] In the step of disposing the composition for the outer resin member 40a, it is preferable to dispose the composition for the outer resin member 40a on the surface of the composition for the inner resin member 30a. By disposing the composition for the outer resin member 40a on the surface of the composition for the inner resin member 30a, the inner resin member 30 after curing is protected by the outer resin member 40, and the inner resin member 30 can be protected from the influence of the external environment such as heat and humidity. The inner resin member composition 30a and the outer resin member composition 40a can be cured by heating to form the inner resin member 30 and the outer resin member 40. The heating temperature and time vary depending on the curing temperature of the inner resin member composition 30a and the outer resin member composition 40a, but for example, they can be cured by heating at a temperature of 50°C to 200°C for 1 hour to 20 hours. The inner resin member composition 30a and the outer resin member composition 40a may be heated in two stages, for example, first heating at a temperature of 50°C to 100°C for 1 hour to 10 hours, and then second heating at a temperature of 100°C to 200°C for 1 hour to 10 hours.

[0055] The method for manufacturing the light emitting device includes a step (S207) of cutting the outer resin member, the inner resin member, and the collective substrate between adjacent light emitting elements. 6F or 6G shows a cutting line 12 in a process of cutting the outer resin member 40, the inner resin member 30, and the collective substrate 20a between adjacent light emitting elements 10. As shown in FIG. 6F or 6G, the outer resin member 40 and the inner resin member 30 arranged between adjacent light emitting elements 10 in one of the row direction and the column direction in a plan view and between the light emitting element 10 and the semiconductor element 70 in the other of the row direction and the column direction are cut along the cutting line 12 so as to include at least one light emitting element 10 and one semiconductor element 70, together with the collective substrate 20a. By the process of cutting the outer resin member 40 and the collective substrate 20a, or the inner resin member 30, the outer resin member 40, and the collective substrate 20a, individual light emitting devices can be separated from a group of a plurality of light emitting devices, and light emitting devices can be manufactured. Here, the embodiment including the semiconductor element 70 and the inner resin member 30 has been described, but either one of them may be omitted. EXAMPLES

[0056] The light emitting device according to the examples will be described in more detail below, but the present invention is not limited to these examples.

[0057] Example 1 As described in the above embodiment, the light emitting device according to Example 1 was manufactured by the same steps as in the manufacturing method of the light emitting device shown in Figures 1 and 2 and the light emitting device shown in Figures 6A to 6G. Descriptions of the same parts as in the above embodiment may be omitted. An aggregate substrate with a conductive pattern formed on its surface was prepared. A flat aluminum nitride substrate was used as the aggregate substrate. The aggregate substrate was formed by firing an aluminum nitride plate with a thermal conductivity of 170 W / m·K. A conductive pattern was formed on the aggregate substrate using metal materials such as Cu, Ni, and Au to electrically connect to the light-emitting elements. The substrate for one light-emitting device has length and width lengths of approximately 1.8 mm and 1.45 mm, respectively, and a thickness of approximately 0.4 mm. The conductive pattern is approximately 2 μm thick.

[0058] A plurality of light emitting elements were arranged vertically and horizontally on an aggregate substrate. A semiconductor element was arranged between a light emitting element and an adjacent light emitting element in either the row direction or the column direction of the plurality of light emitting elements arranged vertically and horizontally. The light emitting element had a planar shape of approximately 1.0 mm square with a semiconductor layer laminated on a sapphire substrate, and a thickness of approximately 0.11 mm. The light emitting element was flip-chip mounted on a conductive pattern using a conductive member made of Au, with the sapphire substrate being the light extraction surface (upper surface). The semiconductor element had a planar shape of approximately 0.4 mm x 0.3 mm rectangle. The semiconductor element was flip-chip mounted on a conductive pattern with bumps made of Au provided in advance. The interval between the light emitting element and the adjacent light emitting element in the row direction was 0.75 mm, and the interval between the light emitting element and the adjacent light emitting element in the column direction was 0.38 mm, and the semiconductor element was arranged between the light emitting element in the row direction with the larger interval and the adjacent light emitting element.

[0059] Next, a plurality of wavelength conversion members were placed on the plurality of light emitting elements, and the wavelength conversion members were bonded to the sapphire substrate surface, which is the light extraction surface (upper surface) of the light emitting elements, using a light guide member. The wavelength conversion member was a rare earth aluminate phosphor, Y 3 (Al,Ga) 5 O 12A ceramic composite containing aluminum oxide and a YAG phosphor having a composition represented by the formula: Ce was used. The wavelength conversion member had a planar shape of approximately 0.95 mm square and a thickness of approximately 0.2 mm.

[0060] Next, a composition for an inner resin member was placed around the light-emitting element and at least a part of the side surface of the semiconductor element. The composition for the inner resin member includes a dimethylpolysiloxane having at least two alkenyl groups bonded to silicon atoms in one molecule, an organohydrogenpolysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule, a dimethylsilicone resin containing a hydrosilylation catalyst, and titanium dioxide particles. The composition for the inner resin member was blended with 30 parts by mass of titanium dioxide particles per 100 parts by mass of dimethylsilicone resin. The composition for the inner resin member was dropped and placed around the plurality of light-emitting elements and the plurality of semiconductor elements.

[0061] Next, an outer resin member composition was placed on the side of the wavelength conversion member and on the upper surface of the semiconductor element. The outer resin member composition was prepared by blending 0.6 parts by mass of a silane coupling agent made of 7-octenyltrimethoxysilane having a reactive double bond group and 60 parts by mass of titanium dioxide particles with 100 parts by mass of dimethyl silicone resin having a Shore A hardness of 60. The outer resin member composition was dropped and placed between the multiple wavelength conversion members so as to cover the surface of the inner resin member composition, the upper surface of the semiconductor element, and the side surface of the wavelength conversion member.

[0062] Next, the assembly substrate and other members that had undergone the above steps were placed in a heating furnace, and first heated at 80° C. for 2 hours, and then second heated at 150° C. for 3 hours to cure the composition for the inner resin member and the composition for the outer resin member, thereby forming the inner resin member and the outer resin member. The thickness T of the outer resin member was 350 μm.

[0063] 6F and 6G, the outer resin member, the inner resin member, and the collective substrate arranged between adjacent light emitting elements in one of the row direction and the column direction in plan view, and between the light emitting elements and the semiconductor elements in the other of the row direction and the column direction, were cut along the cutting lines so as to include at least one light emitting element and one semiconductor element, to separate individual light emitting devices from the plurality of light emitting device groups, thereby producing the light emitting device of Example 1. The narrowest width W from the end of the upper surface of the wavelength conversion member to the end of the outer shape of the light emitting device constituted by the outer resin member of the obtained light emitting device was in the range of 0.10 mm to 0.30 mm.

[0064] Example 2 The light-emitting device of Example 2 was manufactured in the same manner as in Example 1, except that a composition for the outer resin member containing 0.6 parts by mass of a silane coupling agent consisting of 8-methacryloxyoctyltrimethoxysilane having a reactive double bond group was used instead of the silane coupling agent consisting of 7-octenyltrimethoxysilane.

[0065] Comparative Example 1 A light-emitting device of Comparative Example 1 was manufactured in the same manner as in Example 1 using a composition for an outer resin member similar to that of Example 1, except that the composition for an outer resin member did not contain a silane coupling agent having a reactive double bond group.

[0066] Comparative Example 2 The light emitting device of Comparative Example 2 was manufactured in the same manner as in Example 1 using the same outer resin member composition as in Example 1, except that 0.6 parts by mass of bis(1,2,2,6,6-pentamethyl-4-piperidyl) sebacate was used as a hindered amine-based light stabilizer instead of the silane coupling agent having a reactive double bond group.

[0067] Comparative Example 3 A dimethyl silicone resin having a Shore A hardness of 28 measured by the method described below was used as the composition for the outer resin member. Except for not containing a silane coupling agent having a reactive double bond group, a composition for the outer resin member similar to that of Example 1 was used to manufacture a light-emitting device of Comparative Example 3 in the same manner as in Example 1.

[0068] Comparative Example 4 The light-emitting device of Comparative Example 4 was manufactured in the same manner as in Example 1 using the same outer resin member composition as in Example 1, except that 0.6 parts by mass of hexyltrimethoxysilane, which does not contain a reactive double bond group, was used instead of the silane coupling agent having a reactive double bond group as the outer resin member composition.

[0069] evaluation The following evaluations were carried out for the Examples and Comparative Examples. The results are shown in Table 1.

[0070] Shore A hardness The Shore A hardness of the silicone resin contained in the outer resin member was measured in accordance with JIS K6253 using a durometer type A (product name: GS-709G, manufactured by TECLOCK Corporation).

[0071] Elasticity of outer resin material The elastic modulus of the outer resin member was measured under the following conditions using a dynamic microhardness tester (manufactured by Shimadzu Corporation). The elastic modulus of the outer resin member of Comparative Example 1 was set as 100%, and the elastic modulus of each outer resin member of the Examples and Comparative Examples was expressed as a relative elastic modulus to the elastic modulus of the outer resin member of Comparative Example 1. Measurement location: Outer resin parts of light-emitting device Indenter: 6 μm Test force: 3mN

[0072] Time until cracks occur in the outer resin material Each of the light emitting devices of the Examples and Comparative Examples was continuously energized at 1 A in an atmosphere of 85°C and 85% relative humidity, and the time until a crack occurred from the light extraction surface (upper surface) of the wavelength conversion member to the end of the outer resin member was measured by visual observation. The time until a crack occurred in the outer resin member of Comparative Example 1 was set as 0 hours, and the time until a crack occurred in each of the outer resin members of the Examples and Comparative Examples minus the time until a crack occurred in the outer resin member of Comparative Example 1 was expressed as the crack occurrence time.

[0073] [Table 1]

[0074] It was confirmed that the outer resin members used in the light emitting devices of Examples 1 and 2 had a relative elastic modulus of 100% or more, and had no decrease in hardness compared to the outer resin member of Comparative Example 1. In addition, it was confirmed that the outer resin members used in the light emitting devices of Examples 1 and 2 took 300 hours longer for cracks to occur than the outer resin member of Comparative Example 1, and thus the occurrence of cracks was suppressed.

[0075] The outer resin member used in the light emitting device of Comparative Example 2 had a relative modulus of elasticity of 86.8%, which was lower than that of the outer resin member of Comparative Example 1. It was presumed that the outer resin member used in the light emitting device of Comparative Example 2 had a lower relative modulus of elasticity because the added light stabilizer was basic and the curing of the composition for the outer resin member was inhibited by the light stabilizer.

[0076] The outer resin member used in the light emitting device of Comparative Example 3 had a low Shore A hardness of 28, and because a soft silicone resin was used, the time to cracking was long at 600 hours, but the relative elastic modulus was low at 55%. The outer resin member of Comparative Example 3 was presumed to be soft and sticky, making it difficult to transport and pack, and therefore poor for mass production.

[0077] The outer resin member used in the light emitting device of Comparative Example 4 contained a siloxane compound that did not have a reactive double bond group, and therefore the adhesion between the wavelength conversion member and the outer resin member was poor, and the time it took for cracks to occur was the same as that of the light emitting device of Comparative Example 1, and the occurrence of cracks could not be suppressed. [Industrial Applicability]

[0078] The embodiments of the present disclosure can be used in CSPs and surface light-emitting devices. The light-emitting devices according to the embodiments of the present disclosure can be used as light-emitting devices for general lighting, light-emitting devices for vehicles, and backlights for display devices of mobile devices and the like. [Explanation of symbols]

[0079] 10: light-emitting element, 20: substrate, 20a: aggregate substrate, 30: inner resin member, 30a: composition for inner resin member, 40: outer resin member, 40a: composition for outer resin member, 50: wavelength conversion member, 60: conductive member, 70: semiconductor element, 80: light-guiding member, 100: light-emitting device.

Claims

1. A substrate; a light emitting element disposed on the substrate, the light emitting element having an upper surface as a light extraction surface; A wavelength conversion member containing a phosphor and disposed on the upper surface of the light emitting element; an outer resin member disposed on a side of the wavelength conversion member; A light emitting device, wherein the outer resin member includes a silicone resin and a silane coupling agent containing a reactive double bond group, the reactive double bond group being formed by bonding silicon to an alkyl group having 5 to 20 carbon atoms.

2. The light emitting device according to claim 1 , further comprising an inner resin member disposed around the light emitting element.

3. 3 . The light emitting device according to claim 1 , wherein the outer resin member contains the silane coupling agent in an amount within a range of 0.1 parts by mass to 5 parts by mass with respect to 100 parts by mass of the silicone resin.

4. The light-emitting device according to claim 1 , wherein the silane coupling agent has a vinyl group, an allyl group, or a (meth)acryloyl group.

5. The light emitting device according to claim 1 , wherein the silicone resin has a Shore A hardness in the range of 30 or more and 80 or less.

6. The light-emitting device according to any one of claims 1 to 5, wherein the silicone resin is an addition reaction type silicone resin obtained from a dimethylpolysiloxane and / or a modified dimethylpolysiloxane containing at least two alkenyl groups bonded to silicon atoms in one molecule, and an organohydrogenpolysiloxane containing at least two hydrogen atoms bonded to silicon atoms in one molecule.

7. 7. The light emitting device according to claim 1, wherein the outer resin member further comprises a filler, and the filler is at least one selected from the group consisting of titanium dioxide, silicon dioxide, zirconium dioxide, yttria-stabilized zirconia, aluminum oxide, and calcium carbonate.

8. The light emitting device according to claim 7 , wherein the content of the filler is within a range of 20 parts by mass to 80 parts by mass with respect to 100 parts by mass of the silicone resin.

9. The light emitting device according to claim 1 , further comprising a semiconductor element on the substrate, the semiconductor element being separate from the light emitting element.

10. The light emitting device according to claim 1 , wherein the wavelength conversion member includes a ceramic composite containing the phosphor and an inorganic material.

11. 11. The light emitting device of claim 10, wherein the phosphor comprises a rare earth aluminate phosphor and the inorganic material is an inorganic oxide.

12. The light emitting device according to claim 1 , wherein the outer resin member has a thickness in the range of 50 μm to 600 μm.

13. A step of arranging a plurality of light emitting elements vertically and horizontally on an aggregate substrate, with the upper surface being a light extraction surface; arranging a plurality of wavelength conversion members containing a phosphor on the upper surfaces of the plurality of light emitting elements; placing a composition for an outer resin member on each side of the plurality of wavelength conversion members; curing the composition for the outer resin member to form an outer resin member; cutting the outer resin member between adjacent light emitting elements and the assembly substrate; The method for manufacturing a light emitting device, wherein the composition for the outer resin member contains a silicone resin and a silane coupling agent containing a reactive double bond group, and the reactive double bond group is bonded to silicon and an alkyl group having 5 to 20 carbon atoms.

14. In the step of arranging the plurality of light-emitting elements vertically and horizontally, or before or after the step of arranging the plurality of light-emitting elements vertically and horizontally, a step of arranging a plurality of semiconductor elements other than the light-emitting elements between adjacent light-emitting elements in either the horizontal or vertical direction of the light-emitting elements arranged vertically and horizontally, The method for manufacturing a light emitting device according to claim 13 , wherein in the step of disposing the composition for the outer resin member, the composition for the outer resin member is disposed so as to cover a side surface of the wavelength conversion member and an upper surface of the semiconductor element.

15. The method for manufacturing a light-emitting device according to claim 13 or 14, further comprising the step of arranging a composition for an inner resin member around the light-emitting element after the step of arranging the plurality of light-emitting elements vertically and horizontally and before the step of arranging the composition for the outer resin member.

16. The method for producing a light emitting device according to claim 15, which recites claim 14, wherein in the step of placing the composition for the inner resin member, at least a part of a side surface of the semiconductor element is covered with the composition for the inner resin member.

17. The method for producing a light emitting device according to claim 15 or 16, wherein in the step of disposing the composition for the outer resin member, the composition for the outer resin member is disposed on a surface of the composition for the inner resin member.

18. The method for manufacturing a light emitting device according to claim 13 , wherein in the step of arranging the composition for the outer resin member, the composition for the outer resin member is arranged by dropping between the plurality of adjacent wavelength conversion members.

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