Semiconductor wafer manufacturing method

Abstract

The present invention relates to a method for producing semiconductor wafers from single crystal silicon, the method comprising the steps of: 16 AT / cm 3 providing a substrate wafer made of single crystal silicon containing a concentration of interstitial oxygen higher than ASTM (New ASTM); and performing an RTA treatment of the substrate wafer, the RTA treatment including a first heat treatment of the substrate wafer at a first temperature in the temperature range of 1200°C to 1260°C for a period of 5 seconds to 30 seconds, during which the surface of the substrate wafer is exposed to an atmosphere containing argon; a second heat treatment of the substrate wafer at a second temperature in the temperature range of 1150°C to 1190°C for a period of 15 seconds to 20 seconds, during which the surface of the substrate wafer is exposed to an atmosphere containing argon and ammonia; and a third heat treatment of the substrate wafer at a third temperature in the temperature range of 1160°C to 1190°C for a period of 20 seconds to 30 seconds, during which the surface of the substrate wafer is exposed to an atmosphere containing argon.

Description

[Technical field]

[0001] The present invention provides a process for manufacturing semiconductor wafers of single crystal silicon that includes a high temperature step. [Background technology]

[0002] Single crystal semiconductor wafers are the basis of modern electronics, and the manufacture of components on such wafers currently involves performing thermal processes that include relatively complex coating steps.

[0003] Semiconductor wafers are generally obtained by cutting slices from a single crystal using an inner diameter saw or a multi-wire saw (MWS), followed by grinding and / or polishing steps and, optionally, an epitaxy step.

[0004] When a single crystal from which semiconductor wafers are derived is pulled by the Czochralski (CZ) method from a melt contained in a quartz crucible, the crucible material forms a source of interstitial oxygen that is incorporated into the single crystal and into the semiconductor wafers derived therefrom. The concentration of incorporated interstitial oxygen can be controlled quite precisely, for example, by controlling the pressure and the flow of argon through the pulling apparatus, or by adjusting the rotation of the crucible and seed crystal during pulling of the single crystal, or by utilizing a magnetic field applied to the melt, or by a combination of these means. Measured interstitial oxygen concentrations are typically in the range of 5 × 10 for crystals produced by the CZ method. 16 AT / cm 3 (New ASTM) or higher.

[0005] Also, when pulling single crystals of silicon by the CZ method, it is particularly important to control the ratio v / G between the pulling rate v and the axial temperature gradient G at the crystallization interface. The pulling rate v is the speed at which the growing single crystal is lifted upward from the melt, and the axial temperature gradient G is a measure of the temperature change at the crystallization interface in the crystal pulling direction. The type and concentration of point defects (vacancies and interstitial silicon atoms) that are dominant in the single crystal are essentially determined by the v / G index.

[0006] BMDs may occur in particular in regions where the number of vacancies exceeds the number of interstitial silicon atoms and thus vacancies dominate. If there is a relatively large supersaturation of vacancies during the crystallization of the single crystal, which is the case when the v / G index is relatively high, the vacancies form agglomerates, which can be verified, for example, as COPs (Crystal Originated Particles). If v / G, and therefore the supersaturation of vacancies, is a little lower than is necessary for the formation of COPs, seeds of OSF defects (oxidation induced stacking faults) are formed instead of COPs. In this case, the single crystal crystallizes in the OSF region. If the v / G index is further reduced, regions are formed during the crystallization of the single crystal where vacancies still dominate, but which are classified as defect-free since COPs and OSFs are not formed inside them. Such regions are classified as P v When the v / G index becomes smaller, it is also classified as defect-free, but the interstitial silicon atoms are predominant, which is called the P region. i In the region, a single crystal grows.

[0007] The axial temperature gradient G at the crystallization interface and its radial evolution are determined by heat transport from and to the crystallization interface, which is in turn heavily influenced by the thermal properties of the so-called "hot zone" - the environment of the growing single crystal - and by the heat supply through one or more heating devices.

[0008] Once it has been decided to pull the single crystal in a particular hot zone, the axial and radial evolution of the axial temperature gradient G at the crystallization interface can be determined by simulation calculations taking into account the thermal equilibrium. A suitable configuration of the hot zone can also ensure that the axial temperature gradient G develops as desired along the radius of the single crystal. As a result of the growth of the single crystal and the reduction in the melt volume, the thermal conditions and therefore also the axial evolution of the axial temperature gradient G at the crystallization interface change over time. Therefore, in order to maintain the v / G index also in the intended area in the axial direction, the change in the axial temperature gradient G over time needs to be compensated through a corresponding change in the pulling speed v.

[0009] Therefore, by controlling the pulling speed v, it becomes possible to control the v / G index.

[0010] WO 98 / 45508 A1 is one of many publications that describe how the evolution of the pulling rate v over time can be determined experimentally in order to achieve, through control of the pulling rate v, the condition that the v / G index does not change substantially during the growth of the single crystal and that the single crystal can be grown in the intended region. v Area and P i Validation methods for region characterization and differentiation are described.

[0011] Interstitial oxygen in crystals plays an important role in the formation of BMD defects (BMD, bulk microdefects). BMDs are oxygen precipitates into which BMD seeds grow during the heat treatment. BMDs are essentially advantageous since they act as internal getters, i.e. as energy sinks for impurities. One exception is the presence of BMDs in locations intended to accommodate electronic components. To avoid the formation of BMDs in such locations, for example, an epitaxial layer may be deposited on the semiconductor wafer and preparations made to accommodate electronic components within the epitaxial layer. However, the semiconductor wafer may be subjected to a heat treatment that causes the interstitial oxygen to diffuse to the surface of the semiconductor wafer and thus prevents the formation of BMDs in the area near the surface. This area is called the "denuded zone".

[0012] Thus, a denuded zone is a region of a semiconductor wafer, extending to a particular depth in a front-to-back direction, in which BMDs cannot form.

[0013] Adjacent to the denuded layer is a region that extends further into the interior (bulk) of the semiconductor wafer and contains BMD seeds.

[0014] It is known that the presence of vacancies in the single crystal is advantageous when a relatively high density of BMDs is required. US 2002 / 0170631 A1 describes a process for producing semiconductor wafers of single crystal silicon with a deep defect-free layer. The process includes a thermal treatment of the semiconductor wafer (RTA treatment, rapid thermal annealing) that includes a short period of rapid heating and cooling of the semiconductor wafer. The RTA treatment is carried out in an atmosphere containing oxygen at a concentration of 100 ppma to 10,000 ppma. The described process is further designed to form a concentration profile of vacancies in which a peak density of vacancies is achieved at or near the middle between the front and back surfaces of the semiconductor wafer. The concentration profiles of vacancies, BMD seeds and BMDs are interrelated, so that the peak density of BMDs is found at or near the middle as well.

[0015] EP 1 887 110 A1 describes a method for producing a silicon oxide semiconductor comprising the steps of: v The production of semiconductor wafers from single crystals grown in the SiO2 region is described. The presence of nitrogen, and to a lesser extent hydrogen, reduces the P v It has been reported that this allows a wider range of pulling speeds to be utilized so that single crystals can be crystallized in the region. Furthermore, it has been proposed to select a relatively high interstitial oxygen concentration in the semiconductor wafer and to subject the semiconductor wafer to a heat treatment by RTA.

[0016] Patent specification DE 10 2017 219 255 A1 describes a process for the production of semiconductor wafers, which comprises two RTA treatments. The semiconductor wafers thus produced exhibit a defect-free layer of at least 30 μm and a defect density of at least 3×10 at a distance of at least 120 μm from the surface of the semiconductor wafer. 9 cm -3 The BMD seed may grow into one or more BMDs.

[0017] A scientific publication by Muller et al. (T. Muller et al., “Near-Surface Defect Control by Vacancy Injecting / Out-Diffusing Rapid thermal Annealing”, Phys. Status Solidi A, 2019, 1900325) describes the effect of different atmospheres during the RTA step at different temperatures on crystal defects.

[0018] Patent specification DE 10 2016 225 138 A1 discloses a process comprising three RTA steps, whereby an etching step suitable for removing oxide on the surface of the semiconductor wafer is carried out between the first two RTA steps. Summary of the Invention [Problem to be solved by the invention]

[0019] The process proposed in the above patent has drawbacks: the etching step required to remove the oxide layer formed during the first RTA step is costly and poses an additional risk of contamination of the semiconductor wafer. In addition, the rods used for the semiconductor wafer are P v The proposed process places high demands on the material utilized since it must be entirely within the region. Any rod portion not meeting these requirements must be discarded.

[0020] The substrate used in the proposed process is P v Not only the area but also P i It has been found that if regions are also included, the radial homogeneity of the properties of the semiconductor wafer does not meet requirements.

[0021] If the substrate used contains areas where small COPs are detected, the problem of radial uniformity being insufficient for the desired properties of the semiconductor wafer arises. i The same is true for the case where the area further includes both the area and the area where a small COP is detected.

[0022] The abovementioned drawbacks are a determining factor in making the single crystal pulling step necessary to obtain the substrate relatively complex and therefore relatively costly.

[0023] It is therefore an object of the present invention to provide an alternative process which does not have the disadvantages of the process described in DE 10 2016 225 138 A1 but at the same time results in at least the same properties as the described semiconductor wafers. [Means for solving the problem]

[0024] The object of the invention is achieved by the process as set forth in the claims. [Brief description of the drawings]

[0025] [Figure 1]1 shows the temperature range for each ith RTA step, with the horizontal axis showing the index i of the particular RTA step, where T shows the respective temperature of the process according to the invention and, for comparison, T:DE 10 2016 225 138 A1 shows the temperature of the prior art process. [Diagram 2] 1 shows the radial distribution of defects after thermal processing of a test wafer. Regions B1 and B2 indicate the preferred regions for the present invention where the test wafer should be placed to be suitable for thermal processing. W1 and W2 indicate the radial defect density of two different test wafers, where W1 meets the requirements and W2 does not. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS OF THE PRESENT EMBODIMENT Producing single crystal silicon semiconductor wafers according to the present invention includes growing single crystals by the CZ method, slicing the crystal pieces to size to produce at least one test wafer from each crystal piece, slicing substrate wafers from the crystal pieces, and further processing the substrate wafers to provide semiconductor wafers.

[0027] One characteristic of the resulting substrate wafer that is essential to the present invention is that it has an oxygen concentration of less than 5×10 16 At / cm 3 (New ASTM) 1999. It is not always necessary to use the CZ method.

[0028] Further processing of the substrate wafer to provide a semiconductor wafer preferably includes mechanically processing the substrate wafer cut from the single crystal by lapping and / or grinding, removing damaged crystalline regions near the surface by etching, and pre-cleaning the substrate wafer with SC1 solution, SC2 solution and ozone.

[0029] During the growth of the single crystal, the melt is preferably exposed to a magnetic field, particularly preferably a horizontal magnetic field or a CUSP magnetic field. The exponent v / G of the input velocity v and the axial temperature gradient G at the phase interface is such that the single crystal silicon semiconductor wafer obtained by further processing the single crystal is completely P i To consist of the region, or P v The area is controlled to include additional areas.

[0030] The pulling speed v during single crystal growth is preferably 0.45 mm / min or more when it is intended to produce semiconductor wafers with a diameter of 300 mm.

[0031] The optimum pulling speed during pulling can be found by varying the pulling speed of the piece as the length of the crystal increases. From the piece thus obtained, rectangular wafers (so-called slabs) can be cut by two longitudinal cuts running along the centre of the piece, the position of which on one side of the rectangular wafer corresponds to the pulling speed adopted. By analysing this wafer, it is possible to precisely map the defect characteristics to the pulling speed and thus to find the desired pulling speed.

[0032] The single crystal is preferably grown in an argon atmosphere, particularly preferably in an atmosphere containing argon and hydrogen. Particularly preferably, the partial pressure of hydrogen is less than 30 Pa. Here, the partial pressure is calculated according to Dalton's law assuming an ideal gas. The following formula applies:

[0033]

number

[0034] In the formula, n i is the amount of substance of the i-th component, and n tot is the total amount of material, and p tot is the pressure, and p i is the partial pressure of the i-th component.

[0035] The oxygen concentration of the single crystal silicon substrate wafer obtained from the single crystal is 4.5×10 17 atoms / cm 3 More than 5.2 x 10 17 atoms / cm 3 The oxygen concentration in a single crystal can be adjusted during its production, for example, by controlling the rotation speed of the crucible and / or the rotation speed of the single crystal, and / or by controlling the pressure and / or flow rate of the gas forming the atmosphere in which the single crystal is grown, and / or by controlling the magnetic field strength of the magnetic field to which the melt is exposed.

[0036] The defect density on the test wafers was determined using a Semilab IR-LST laser tomograph with a laser power of 50-80mW and a defect size resolution range of 20nm-60nm. The measured defect density across the test wafer was 5×10 4 1 / cm 3 If the COP was less than 0.01, the associated crystal piece was determined to be free of COP.

[0037] The inventors have realised that it is particularly advantageous to use a substrate wafer which contains only oxygen precipitates less than 9 nm in size, preferably less than 6 nm. Testing may be carried out on the substrate, for example by TEM (Transmission Electron Microscopy).

[0038] The area on the substrate wafer containing the oxygen precipitate seeds is called P bmd Also called an area. As a test to see if such oxygen precipitates having the characteristics described occur, the inventors carried out the following process.

[0039] The test wafers are placed in an oven (horizontal or vertical) under N2 atmosphere at 880-920 °C for 6-10 h, then heated to 1080-1120 °C and wet oxidation with O2 / H2 is performed for a holding time of 1.5-2.5 h. The test wafers are then cooled under pure O2 atmosphere. All heating and cooling rates are in the range of 5-10 K / min. The test wafers are then Secco etched to remove 5-10 μm of material and the generated defects are detected by radial scanning optical microscope and their density determined.

[0040] The measured defect density across the surface of the test wafer was 50 defects / cm 2 If the oxygen precipitate size is less than 6 nm, then any oxygen precipitates present are deemed to be less than 6 nm.

[0041] A measured defect density of 50 defects / cm within a circle on the surface of the test wafer that is co-centered with the surface of the test wafer and has a radius of 50 mm or less 2 Greater than 75 defects / cm 2 and the measured defect density on the remainder of the test wafer is less than 50 defects / cm 2 If the oxygen precipitates are smaller than 9 nm, then any oxygen precipitates present are deemed to be less than 9 nm in size.

[0042] As an example, the experimentally determined defect densities of two test wafers W1 and W2 are shown in Figure 2. Thus, test wafer W1 meets the requirements and W2 does not.

[0043] To determine the size of the oxygen precipitates, numerical simulations similar to those in the Muller et al. publication were performed and the boundary conditions were adapted accordingly.

[0044] The inventors further discovered that P i It has been recognized that it is preferable for the substrate wafer to include a region.

[0045] The LPIT measurements were performed by microscopically counting the defects found on the surface of the substrate wafer after first performing a bright etch (70 μm material removal) followed by a Secco etch for 16 min.

[0046] The substrate wafer is a P-type wafer that is dominated by silicon vacancies but does not form agglomerates larger than 10 nm. v Preferably, the region further comprises a region that is preferably less than 80% of the area of ​​the substrate wafer.

[0047] The RTA process involves first rapidly heating a substrate wafer of single crystal silicon to a temperature in the range of 1200° C. to 1260° C. and holding the substrate wafer within this temperature range for a period of 5 to 30 seconds, the first heat treatment being performed in an atmosphere that includes, and preferably consists of, argon.

[0048] A subsequent second heat treatment involves rapidly heating the single crystal silicon substrate wafer to a temperature within the temperature range of 1150°C to 1190°C and holding the substrate wafer within this temperature range for a period of 15 seconds to 20 seconds in an atmosphere including argon and ammonia, preferably consisting of argon and ammonia (NH3).

[0049] A preferred RTA process is shown generally in FIG. The volume ratio Ar:NH3 is preferably ≧10:10 and ≦10:5, particularly preferably 10:8. The flow rate of the gas mixture through the RTA oven is preferably ≧2 slm and ≦5 slm.

[0050] After the second heat treatment in the atmosphere containing argon and ammonia, the single crystal silicon substrate wafer is subjected to a third heat treatment in an inert atmosphere containing argon, preferably consisting of argon, at a temperature in the temperature range of 1160°C to 1190°C for a period of 20 seconds to 30 seconds.

[0051] During each heat treatment, the composition of the atmosphere was changed and the heat treatment of the substrate wafers continued at a constant temperature.

[0052] Alternatively, it is preferred to initially cool the substrate wafer to above 600° C. between the second and third heat treatments, purge the RTA oven with nitrogen until free of ammonia, and then bring the substrate wafer to the target temperature of the third heat treatment in an inert atmosphere.

[0053] Further processing of the substrate wafer in an inert atmosphere is particularly important because it sufficiently reduces the vacancy density in the regions of the denuded layer, thereby preventing oxygen precipitates from reforming in those regions.

[0054] The rapid heating of the monocrystalline silicon substrate wafer in the course of the first and second heat treatment is preferably carried out from a temperature of 600° C. to the target temperature with a heating rate of at least 15 K / s, particularly preferably at least 25 K / s.

[0055] Contrary to conventional teaching (Muller et al.) that a low oxygen concentration (e.g., 1% O2) is required in the atmosphere of the first heat treatment step to dissolve oxygen precipitates close to the surface (denuded zone), surprisingly no adverse effects due to the absence of oxygen during the first heat treatment were observed.

[0056] Advantageously, the time that elapses between the start of the first heat treatment and the end of the last heat treatment is less than or equal to 320 seconds. The start and end of a heat treatment shall be understood to be the time at which the substrate wafer achieves a temperature of 600° C.

[0057] After the RTA treatment, the substrate wafer of monocrystalline silicon is preferably polished by DSP (double-sided polishing), i.e. simultaneous polishing of the top and bottom sides, followed by polishing of the notch of the substrate wafer and polishing of the edge of the substrate wafer. It is usually the area of ​​the top side, which is the surface of the semiconductor wafer thus obtained, that is used to construct electronic components, and therefore a final polishing of the surface by CMP (chemical mechanical polishing) is particularly preferred. The polished semiconductor wafer is then preferably subjected to a final cleaning and drying.

[0058] Semiconductor wafers of single crystal silicon manufactured according to the above-described process are particularly suitable for manufacturing electronic components having NAND logic, including under conditions that provide a relatively small thermal budget. Requirements for this suitability include a relatively deep denuded layer, a high dielectric strength of the gate oxide formed on the semiconductor wafer, and the ability to form a high density of BMDs in the interior regions of the semiconductor wafer despite a relatively low oxygen concentration and despite a relatively low thermal budget available for manufacturing the BMDs.

Claims

1. 1. A process for manufacturing single crystal silicon semiconductor wafers, comprising: 5×10 １６ A T / cm ３ providing a substrate wafer of single crystal silicon containing a concentration of interstitial oxygen higher than (new ASTM); and subjecting the substrate wafer to an RTA treatment, the RTA treatment comprising: a first heat treatment of the substrate wafer at a first temperature in the temperature range of 1200° C. to 1260° C. for a period of 5 seconds to 30 seconds, during which a surface of the substrate wafer is exposed to an atmosphere consisting of argon; a second heat treatment of the substrate wafer at a second temperature in the temperature range of 1150° C. to 1190° C. for a period of 15 seconds to 20 seconds, during which a surface of the substrate wafer is exposed to an atmosphere comprising argon and ammonia; a third heat treatment of the substrate wafer at a third temperature in the temperature range of 1160° C. to 1190° C. for a period of 20 seconds to 30 seconds, during which a surface of the substrate wafer is exposed to an atmosphere comprising argon; The process, wherein the substrate wafer is obtained from a silicon crystal produced by the Czochralski pulling method, and during pulling, the partial pressure of H2 in the atmosphere in the pulling apparatus does not fall below 20 Pa.

2. 2. The process of claim 1, wherein the time from the start of the first heat treatment to the end of the third heat treatment is 320 seconds or less.

3. 3. The process of claim 1 or claim 2, wherein a minimum temperature of the substrate wafer between the first and second heat treatments, and between the second and third heat treatments, is 600° C. or higher.

4. The atmosphere in the second heat treatment is NH ３ The process according to any one of claims 1 to 3, comprising 40% to 60% of

5. The interstitial oxygen concentration of the substrate wafer is 4.5×10 １７ atoms / cm ３ (New ASTM) 5.2×10 or more １７ atoms / cm ３ The process of any one of claims 1 to 4, wherein the tensile strength is 100% or less than 100% (new ASTM).

6. The H ２ 2. The process of claim 1, wherein the partial pressure of is 50 Pa or less.

7. The substrate wafer is a P ｉ The process according to any one of claims 1 to 6, wherein the region

8. The substrate wafer is a P wafer having a size less than 30% of the substrate wafer, where silicon vacancies are predominant. ｖ The process of claim 7, comprising a region.

9. The P ｖ The region is a P region where the size of the oxygen precipitates present is 9 nm or less. ｂｍｄ The process of claim 8 comprising a region.

10. The process of any one of claims 1 to 9, wherein the substrate wafer has a diameter of 300 mm or more.

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