VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE, METHOD FOR MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE

Abstract

[Problem] To provide a vertical cavity surface emitting laser element having excellent electric responsiveness and high productivity and reliability, a method for manufacturing the vertical cavity surface emitting laser element, and a photoelectric conversion device. [Solution] A vertical cavity surface emitting laser element according to the present technology is equipped with a semiconductor laminate. The semiconductor laminate is provided with: a first mirror having a first conductivity type; a second mirror having a second conductivity type and causing optical resonance together with the first mirror; an activation layer disposed between the first mirror and the second mirror; and a constriction layer having a non-oxidized region that is disposed between the first mirror and the second mirror and that is formed from a first material, and an oxidized region that is disposed around the non-oxidized region and that is formed from a second material obtained by oxidizing the first material. The semiconductor laminate has: a mesa that has an outer peripheral surface from which the end surfaces of the constriction layer and the activation layer are exposed; and an ion injection region that has ions injected therein, is formed to reach a predetermined depth in the activation layer and the constriction layer from the outer peripheral surface, and is spaced apart from the non-oxidized region.

Description

[Technical field]

[0001] The present technology relates to a vertical-cavity surface-emitting laser element used in optical communications and the like, a manufacturing method for a vertical-cavity surface-emitting laser element, and a photoelectric conversion device. [Background technology]

[0002] A Vertical Cavity Surface Emitting Laser (VCSEL) element is a type of semiconductor laser element, and has a structure in which an active layer is sandwiched between a pair of Distributed Bragg Reflectors (DBRs). The pair of DBRs form a cavity, and reflect light generated in the active layer in a direction perpendicular to the layer plane, causing laser oscillation.

[0003] A current confinement structure is provided near the active layer to concentrate the current in a narrow region in the active layer. The current confinement structure can be formed by oxidizing the oxidized layer from the periphery of the VCSEL element formed in a mesa shape (plateau shape) and insulating the peripheral region of the oxidized layer. This makes it possible for only the central region of the oxidized layer to be conductive, concentrating the current in the active layer located near the central region.

[0004] In addition, the oxide layer that constitutes the current confinement structure is accompanied by a decrease in refractive index during the oxidation process, resulting in the formation of a region with a low refractive index around the light-emitting region. The distribution of the refractive index within the layer plane is designed to confine light from the direction along the layer plane to the part with a high refractive index at the center of the mesa, and together with the aforementioned resonator structure, this achieves high optical confinement in the active layer in three dimensions. Improving the optical confinement increases the proportion of light that receives stimulated emission gain in the active layer, making it possible to increase the effective optical gain.

[0005] On the other hand, to achieve high-speed modulation of VCSEL elements, it is necessary to improve not only the optical time response but also the electrical time response (electrical bandwidth) when injecting current into the active layer. One of the factors that determines the electrical time response is the junction capacitance at the pn junction that occurs in the mesa. In particular, because high-frequency current also passes through the oxide layer, the junction capacitance of the outer periphery of the mesa via the oxide layer becomes a problem. Moreover, this part does not contribute to the laser emission from the center of the mesa, so it is also necessary to reduce the junction capacitance of the outer periphery of the mesa in this respect.

[0006] For example, Patent Document 1 discloses a method of insulating the mesa periphery by implanting ions into the mesa periphery. In this example, the DBR on the wafer surface side is etched up to just above the active layer, and a mesa structure is formed. An implantation mask is then attached on top, and ions are then implanted, resulting in an insulated structure in which the region excluding the active layer just below the mesa-shaped DBR described above is insulated. The insulated layer acts as a current confinement layer and determines the current injection diameter of the active layer.

[0007] Also, Non-Patent Document 1 discloses a structure that uses both an oxide layer and proton injection to separate the light-emitting region from the ion-implanted region. In this structure, in order to ensure reliability, the semiconductor mesa structure is supported by multiple semiconductor supports that extend to the periphery, forming a stabilized structure that is less susceptible to external forces on the mechanically weak oxide layer. Inside this structure, protons are injected from the p-type mirror on the periphery of the mesa to the active layer range to provide insulation. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Publication No. 05-235473 [Non-Patent Document 1] "More VCSELs at Finisar" Proceeding of SPIE - The international Society for Optical Engineering, February 2009, Vol.7229 722905-1 " Summary of the Invention [Problem to be solved by the invention]

[0009] However, the structure described in Patent Document 1 does not have a mechanism for confining light in the layer plane direction, and cannot control the transverse mode of the oscillating laser light, which means that it allows oscillation of many higher-order modes, causing problems such as unstable competition between modes and the associated noise, making it unsuitable for high-speed modulation or signal transmission.In addition, the positions of the crystal defects introduced into the ion-implanted region when ions are implanted into the active layer and the laser light are close to each other, making it easy for the crystal defects to grow due to the energy supply to the defects from the high-temperature, high-light-intensity active layer, and there is a high possibility that the deterioration of the VCSEL element will be accelerated.

[0010] Furthermore, in the structure described in Non-Patent Document 1, if the outer periphery is fabricated with insufficient insulation, part of the injected current will flow to the outside of the pillar via the semiconductor pillar (becoming a leakage current), so it is necessary to insulate not only the outer periphery of the mesa but also all of the semiconductor pillars and their outer regions by injecting protons over a wide range. If all layers within the injection range in the depth direction are not insulated evenly, leakage will occur through layers with poor insulation, so in order to realize this insulating structure, it is necessary to inject protons evenly in the depth direction.

[0011] For this reason, protons must be implanted multiple times while changing the acceleration voltage (changing the implantation depth), and because the implantation is performed while scanning the position with an ion beam, it may take several hours to implant the amount of protons uniformly over the entire wafer.

[0012] Furthermore, an ion implantation mask (generally made of resist) is used on the wafer surface to selectively inject protons into the desired areas, but after implantation, the mask resist deteriorates and changes in quality due to ion beam irradiation, making it difficult to remove the mask. In the case of multi-stage implantation, more means and time are required, and depending on the method, this can easily become a cause of defects in the process.

[0013] In view of the above circumstances, an object of the present technology is to provide a vertical-cavity surface-emitting laser element having excellent electrical response and high productivity and reliability, a manufacturing method for a vertical-cavity surface-emitting laser element, and a photoelectric conversion device. [Means for solving the problem]

[0014] In order to achieve the above object, a vertical cavity surface emitting laser element according to an embodiment of the present technology includes a semiconductor laminate. The semiconductor laminate includes a first mirror having a first conductivity type, a second mirror having a second conductivity type and causing optical resonance with the first mirror, an active layer provided between the first mirror and the second mirror, and a constriction layer provided between the first mirror and the second mirror, having a non-oxidized region made of a conductive material, and an oxidized region provided around the non-oxidized region made of an insulating material obtained by oxidizing the conductive material, and the semiconductor laminate has a mesa having an outer peripheral surface where end faces of the active layer and the constriction layer are exposed, and an ion-implanted region which is a region into which ions are implanted, the mesa being formed in the active layer and the constriction layer to a predetermined depth from the outer peripheral surface and separated from the non-oxidized region.

[0015] According to this configuration, by providing an ion implantation region from the mesa outer periphery to a predetermined depth, it is possible to prevent current transmission in the outer periphery of the mesa and reduce the junction capacitance in the outer periphery of the mesa, thereby improving the electrical bandwidth of the vertical cavity surface emitting laser element.

[0016] the mesa is formed by partial removal of the semiconductor laminate; The ion implantation region may be exposed at a removal surface formed by partially removing the semiconductor laminate.

[0017] The vertical cavity surface emitting laser element may further include an insulator provided around the mesa and covering the removed surface.

[0018] The ion implantation region may have a concentration distribution of the ion species having one peak in a direction perpendicular to the layer surface direction.

[0019] The ion species is H, The implantation dose of the above ion species is 5×10 14 ions / cm 2 It may be more than that.

[0020] the ion species is C, B, O, Ar, Al, Ga or As; The implantation dose of the above ion species is 5×10 13 ions / cm 2 It may be more than that.

[0021] The mesa has a surface parallel to a layer plane direction, the vertical cavity surface emitting laser element further comprises an electrode formed on the surface; The semiconductor laminate may further include an impurity diffusion region formed between the electrode and the ion implantation region to a predetermined depth from the outer circumferential surface, in which an impurity is diffused.

[0022] The impurity diffusion region may be a region in which the impurity is thermally diffused.

[0023] The impurity diffusion region may be provided in a range overlapping with the ion implantation region when the mesa is viewed from a direction perpendicular to the layer surface direction.

[0024] The impurity diffusion region has an impurity concentration of 1×10 17 / cm 3 It may be more than that.

[0025] the impurity diffusion region is provided in the first mirror, The first conductivity type is p-type, The impurities may be C, Zn or Mg.

[0026] the impurity diffusion region is provided in the first mirror, The first conductivity type is n-type, The impurity may be Si, S or Se.

[0027] In order to achieve the above object, a manufacturing method of a vertical cavity surface emitting laser element according to one embodiment of the present technology includes forming a semiconductor laminate including a first mirror having a first conductivity type, a second mirror having a second conductivity type and causing optical resonance with the first mirror, an active layer provided between the first mirror and the second mirror, and a constriction layer provided between the first mirror and the second mirror. In the semiconductor laminate, ions are implanted from a direction perpendicular to the layer plane direction, excluding a non-implanted region, to form an ion-implanted region. The semiconductor laminate is etched to form a mesa including the non-implanted region, the mesa having an outer peripheral surface where end faces of the active layer and the constriction layer are exposed, and the ion implanted region is distributed in the active layer and the constriction layer from the outer peripheral surface to a first depth. The narrowing layer is oxidized from the outer circumferential surface to form an oxidized region in the narrowing layer from the outer circumferential surface to a second depth deeper than the first depth.

[0028] The method for manufacturing the vertical cavity surface emitting laser element includes the steps of: The method may further include a step of diffusing impurities in the semiconductor laminate to form an impurity diffusion region.

[0029] The step of forming the impurity diffusion region may be performed after the step of forming the ion implantation region and before the step of forming the mesa, so that the impurity is diffused into the region through which the ions have passed in the step of forming the ion implantation region.

[0030] The step of forming the impurity diffusion region may include diffusing the impurities by thermal diffusion.

[0031] In order to achieve the above object, a photoelectric conversion device according to an embodiment of the present technology includes a vertical cavity surface emitting laser element. The vertical cavity surface emitting laser element is a semiconductor laminate including a first mirror having a first conductivity type, a second mirror having a second conductivity type and causing optical resonance with the first mirror, an active layer provided between the first mirror and the second mirror, and a constriction layer provided between the first mirror and the second mirror and having a non-oxidized region made of a conductive material and an oxidized region made of an insulating material obtained by oxidizing the conductive material and provided around the non-oxidized region, the semiconductor laminate including a mesa having an outer peripheral surface where end faces of the active layer and the constriction layer are exposed, and an ion-implanted region which is a region into which ions are implanted, the ion-implanted region being formed in the active layer and the constriction layer to a predetermined depth from the outer peripheral surface and separated from the non-oxidized region.

[0032] The mesa may have a surface parallel to a layer plane direction, the vertical cavity surface emitting laser element may further include an electrode formed on the surface, and the semiconductor laminate may further include an impurity diffusion region formed between the electrode and the ion implantation region to a predetermined depth from the outer circumferential surface, in which an impurity is diffused. [Brief description of the drawings]

[0033] [Figure 1] 1 is a cross-sectional view of a vertical-cavity surface-emitting laser (VCSEL) element according to a first embodiment of the present technology. [Diagram 2] FIG. 2 is a plan view of the VCSEL element. [Diagram 3] FIG. 2 is a cross-sectional view of a semiconductor laminate included in the VCSEL element. [Figure 4] FIG. 2 is a plan view of a confinement layer included in the VCSEL element. [Diagram 5] FIG. 2 is a plan view of a mesa formed in a semiconductor laminate included in the VCSEL element. [Figure 6] FIG. 2 is a cross-sectional view of the VCSEL element. [Figure 7] FIG. 2 is a cross-sectional view of a semiconductor laminate included in the VCSEL element. [Figure 8] FIG. 2 is a plan view of a mesa formed in a semiconductor laminate included in the VCSEL element. [Figure 9] FIG. 2 is a plan view of a mesa formed in a semiconductor laminate included in the VCSEL element. [Figure 10] 5 is a schematic diagram showing the operation of the VCSEL element. FIG. [Figure 11] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Figure 12] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Figure 13] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Figure 14] 1 is a cross-sectional view of a vertical-cavity surface-emitting laser (VCSEL) element according to a second embodiment of the present technology. [Figure 15] FIG. 2 is a plan view of the VCSEL element. [Figure 16] FIG. 2 is a cross-sectional view of the VCSEL element. [Figure 17] FIG. 2 is a cross-sectional view of a semiconductor laminate included in the VCSEL element. [Figure 18] FIG. 2 is a plan view of a mesa formed in a semiconductor laminate included in the VCSEL element. [Figure 19] FIG. 2 is a schematic diagram showing the distribution of ion implantation regions and impurity diffusion regions in the above-mentioned VCSEL element. [Figure 20] FIG. 2 is a schematic diagram showing the distribution of ion implantation regions and impurity diffusion regions in the above-mentioned VCSEL element. [Figure 21] 5 is a schematic diagram showing the operation of the VCSEL element. FIG. [Figure 22] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Diagram 23] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Figure 24] 3A to 3C are schematic diagrams illustrating a method for manufacturing the VCSEL element. [Diagram 25] FIG. 2 is a schematic diagram showing the effect of an impurity diffusion region in the VCSEL element. [Figure 26] FIG. 2 is a schematic diagram showing the effect of an impurity diffusion region in the VCSEL element. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] (First embodiment) A vertical cavity surface emitting laser (VCSEL) element according to a first embodiment of the present technology will be described.

[0035] [VCSEL element structure] Fig. 1 is a cross-sectional view of a VCSEL device 100 according to this embodiment, and Fig. 2 is a plan view of the VCSEL device 100. Fig. 1 is a cross-sectional view taken along line AA in Fig. 2. In each drawing of this disclosure, the light emission direction of the VCSEL device 100 is designated as the Z direction, a direction perpendicular to the Z direction is designated as the X direction, and a direction perpendicular to the X and Z directions is designated as the Y direction. In the following description, the oscillation wavelength of the VCSEL device 100 is designated as λ.

[0036] As shown in FIGS. 1 and 2 , the VCSEL device 100 includes a substrate 101, an n-type mirror 102, an n-side spacer layer 103, an active layer 104, a p-side spacer layer 105, a confinement layer 106, a p-type mirror 107, an insulator 108, an n-electrode 109, a p-electrode 110, an n-electrode pad 111, and a p-electrode pad 112.

[0037] A stack of n-type mirror 102, n-side spacer layer 103, active layer 104, p-side spacer layer 105, confinement layer 106, and p-type mirror 107 is taken as semiconductor stack 121. Fig. 3 is a cross-sectional view of semiconductor stack 121. As shown in the figure, each layer of semiconductor stack 121 is stacked so that the layer surface direction is along the XY plane.

[0038] The substrate 101 supports the layers of the VCSEL device 100. The substrate 101 may be, for example, an n-GaAs substrate, but may be made of other materials.

[0039] N-type mirror 102 is made of an n-type semiconductor material, is provided on substrate 101, and reflects light of wavelength λ. N-type mirror 102 functions as a DBR (Distributed Bragg Reflector), and together with p-type mirror 107, constitutes an optical resonator for laser oscillation. N-type mirror 102 can be formed by alternately stacking multiple layers, for example, two layers of n-AlGaAs with different composition ratios.

[0040] The n-side spacer layer 103 is laminated on the n-type mirror 102, and the distance between the n-type mirror 102 and the p-type mirror 107 is adjusted to be λ. The n-side spacer layer 103 is made of an n-type semiconductor material or an undoped semiconductor material, and can be made of, for example, n-AlGaAs.

[0041] The active layer 104 is provided on the n-side spacer layer 103, and emits and amplifies spontaneous emission light. The active layer 104 may be formed by alternately stacking multiple quantum well layers and barrier layers. The quantum well layers may be made of, for example, InGaAs, and the barrier layers may be made of, for example, InGaAs having a different composition ratio from that of the quantum well layers.

[0042] The p-side spacer layer 105 is laminated on the active layer 104, and the distance between the n-type mirror 102 and the p-type mirror 107 is adjusted to be λ. The p-side spacer layer 105 is made of a p-type semiconductor material or an undoped semiconductor material, and can be made of, for example, p-AlGaAs.

[0043] The constriction layer 106 is provided on the p-side spacer layer 105, and provides a confining effect to current and confines light in the XY directions. FIG. 4 is a plan view of the constriction layer 106. As shown in the figure, the constriction layer 106 includes a non-oxidized region 106a and an oxidized region 106b. The non-oxidized region 106a is provided in the center of the constriction layer 106 and has a circular shape. The oxidized region 106b is provided around the non-oxidized region 106a. As shown in FIGS. 3 and 4, the inner diameter of the oxidized region 106b is defined as an inner diameter R1.

[0044] The non-oxidized region 106a is made of a conductive material, and the oxidized region 106b is made of an insulating material obtained by oxidizing the material of the non-oxidized region 106a. For example, the non-oxidized region 106a can be made of AlAs, and the oxidized region 106b can be made of AlAs oxide. The oxidized region 106b becomes insulating due to oxidation, and its conductivity is greatly reduced compared to the non-oxidized region 106a, which causes a current confinement effect. Furthermore, the refractive index of the oxidized region 106b is reduced compared to the non-oxidized region 106a due to oxidation, which causes a light confinement effect in the XY directions.

[0045] P-type mirror 107 is made of a p-type semiconductor material, is provided on confinement layer 106, and reflects light of wavelength λ. P-type mirror 107 functions as a DBR, and together with n-type mirror 102, constitutes an optical resonator for laser oscillation. P-type mirror 107 can be, for example, a multi-layer stack of two layers of p-AlGaAs with different composition ratios stacked alternately.

[0046] The semiconductor laminate 121 has a mesa (plateau-shaped) structure. Specifically, as shown in Fig. 3, the p-type mirror 107, the narrowing layer 106, the p-side spacer layer 105, the active layer 104, the n-side spacer layer 103, and the n-type mirror 102 are partially removed to form a columnar mesa 122 made of these layers. The recess formed by this removal is called the recess 123.

[0047] Fig. 5 is a plan view showing the mesa 122. As shown in the figure, the mesa 122 is circular when viewed from the Z direction, and may have a cylindrical shape. The outer diameter of the mesa 122 is indicated as outer diameter R2. As shown in Figs. 3 and 5, the outer peripheral surface of the mesa 122 is indicated as outer peripheral surface 122a.

[0048] The outer peripheral surface 122a is a surface formed by the above-mentioned removal, and the end faces of the p-type mirror 107, the narrowing layer 106, the p-side spacer layer 105, the active layer 104, the n-side spacer layer 103, and the n-type mirror 102 are exposed on the outer peripheral surface 122a. Furthermore, a surface parallel to the layer surface direction (XY plane) is formed on the n-type mirror 102 by the above-mentioned removal, which is continuous with the outer peripheral surface 122a. Hereinafter, this surface is referred to as the non-outer peripheral surface 122b. Furthermore, the surface formed by the above-mentioned removal, which is a combination of the outer peripheral surface 122a and the non-outer peripheral surface 122b, is referred to as the removed surface 122c.

[0049] In the above-described narrowing layer 106, the oxidized region 106b is formed to a certain depth from the outer circumferential surface 122a. In Figures 3 and 4, the depth of the oxidized region 106b from the outer circumferential surface 122a is shown as depth D1.

[0050] The insulator 108 is made of an insulating material, is provided in the recess 123 (see FIG. 3), and covers the removed surface 122c. The insulator 108 protects the removed surface 122c and suppresses unnecessary junction capacitance, and also supports the n-electrode pad 111 and the p-electrode pad 112. The insulator 108 may be made of a resin such as polyimide or BCB (Benzocyclobutene), or an inorganic material such as SiO2 or SiN.

[0051] N-electrode 109 penetrates insulator 108 and is electrically connected to substrate 101, and functions as an n-side electrode of VCSEL device 100. N-electrode 109 is made of any conductive material. P-electrode 110 is formed on p-type mirror 107, is electrically connected to p-type mirror 107, and functions as a p-side electrode of VCSEL device 100. P-electrode 110 is made of any conductive material and is formed in a circular ring shape on p-type mirror 107 as shown in FIG.

[0052] The n-electrode pad 111 is provided on the insulator 108 and is electrically connected to the n-electrode 109. The n-electrode pad 111 is made of any conductive material. The p-electrode pad 112 is provided on the insulator 108 and is electrically connected to the p-electrode 110. The p-electrode pad 112 is made of any conductive material.

[0053] Here, the area of ​​the surface of the p-type mirror 107 surrounded by the p-electrode 110 is the light emission surface from which the laser light is emitted in the VCSEL device 100. The exit surface is indicated as S.

[0054] [Ion implantation area] In the VCSEL element 100, an ion implantation region in which ions are implanted is provided in the semiconductor laminate 121. Fig. 6 is a cross-sectional view of the VCSEL element 100 showing the ion implantation region 131, taken along line AA in Fig. 2. Fig. 7 is a cross-sectional view of the semiconductor laminate 121 showing the ion implantation region 131, and shows a portion of the configuration of Fig. 6. In Figs. 6 and 7, the ion implantation region 131 is a region indicated by dots. Fig. 8 is a plan view of the mesa 122 showing the ion implantation region 131.

[0055] The ion implantation region 131 is a region in which ions are implanted into the material of the semiconductor laminate 121 to make it insulated. As shown in Figures 6 to 8, the ion implantation region 131 is formed in the n-side spacer layer 103, the active layer 104, the p-side spacer layer 105, and the narrowing layer 106 to a predetermined depth from the outer circumferential surface 122a of the mesa 122, that is, is formed in a ring shape on the outer periphery of these layers. In Figures 7 and 8, the depth of the ion implantation region 131 from the outer circumferential surface 122a is shown as depth D2.

[0056] The depth D2 is shallower than the depth D1 (see FIG. 3) of the oxidized region 106b from the outer circumferential surface 122a, and does not reach the non-oxidized region 106a. Therefore, the ion implanted region 131 provided in the constriction layer 106 is separated from the non-oxidized region 106a. In FIGS. 7 and 8, the inner diameter of the ion implanted region 131 is shown as inner diameter R3.

[0057] 9 is a schematic diagram showing an inner diameter R1 of the oxidized region 106b, an outer diameter R2 of the mesa 122, and an inner diameter R3 of the ion implantation region 131. As shown in the drawing, the inner diameter R3 is larger than the inner diameter R1 and smaller than the outer diameter R2.

[0058] In addition, ion implantation region 131 is also formed in a part of n-type mirror 102 on the active layer 104 side and in a part of p-type mirror 107 on the active layer 104 side. As shown in Fig. 7, ion implantation region 131 is exposed to non-outer circumferential surface 122b and can be formed to a certain depth from non-outer circumferential surface 122b.

[0059] The ion species of the ions implanted in the ion implantation region 131 can be H, C, B, O, Ar, Al, Ga, or As. Among these, H ions (protons) are preferable because they have the smallest atomic radius and are easy to implant deeply. The implantation amount (dose amount) of ions is 5×10 for H. 14 ions / cm 2 or more is preferable, and for other ion species, 5×10 13 ions / cm 2 The above is preferable.

[0060] Here, the concentration distribution of the ion species in the ion implantation region 131 differs depending on the number of ion implantation stages described below. When the ion implantation region 131 is formed by one-stage ion implantation, the concentration distribution of the ion species in the direction perpendicular to the layer surface direction (Z direction) has only one peak. On the other hand, when the ion implantation region 131 is formed by multiple-stage ion implantation, the concentration distribution of the ion species in the direction perpendicular to the layer surface direction (Z direction) has multiple peaks.

[0061] It is not necessary that the ion implantation region 131 is provided in all of the above layers, but it is sufficient that it is provided in at least the active layer 104 and the narrowing layer 106 .

[0062] The above-described structure is of VCSEL device 100. Note that the n-type and p-type may be reversed in VCSEL device 100. Furthermore, VCSEL device 100 may include other layers in addition to the above-described layers.

[0063] [VCSEL element operation] The operation of VCSEL element 100 will now be described. Fig. 10 is a schematic diagram showing the operation of VCSEL element 100. When a voltage is applied between n-electrode 109 and p-electrode 110, a current flows between n-electrode 109 and p-electrode 110. The current is subjected to the current confinement effect of confinement layer 106, and is injected into non-oxidized region 106a as shown by arrow C in Fig. 9.

[0064] This injected current generates spontaneous emission F in a region of the active layer 104 that is close to the non-oxidized region 106a. The spontaneous emission F travels in the stacking direction of the VCSEL device 100 and is reflected by the n-type mirror 102 and the p-type mirror 107. At this time, the spontaneous emission F is subjected to an optical confinement effect in the layer surface direction (XY direction) by the oxidized region 106b, which has a small refractive index.

[0065] Since n-type mirror 102 and p-type mirror 107 are configured to reflect light having an oscillation wavelength λ, the component of the spontaneous emission light having the oscillation wavelength λ forms a standing wave between n-type mirror 102 and p-type mirror 107 and is amplified by active layer 104. When the injection current exceeds a threshold, the light forming the standing wave oscillates into a laser, and the laser light L passes through p-type mirror 107 and is emitted from light emission surface S.

[0066] Here, in the VCSEL device 100, an insulated ion-implanted region 131 is provided in the peripheral region of the active layer 104, etc. As described above, the current is subjected to the confinement action of the confinement layer 106 and is concentrated in the non-oxidized region 106a, but some of the current passes through the oxidized region 106b. In particular, as the electrical bandwidth becomes wider, when the frequency of the current increases, the current passing through the oxidized region 106b increases, and the junction capacitance in the peripheral region of the mesa 122 increases, making it difficult to widen the bandwidth.

[0067] Here, by providing ion implantation region 131 in VCSEL element 100, it is possible to prevent current transmission in the peripheral region of mesa 122 and reduce the junction capacitance in the peripheral region of mesa 122, thereby improving the electrical bandwidth of VCSEL element 100.

[0068] Furthermore, since the inner diameter R3 of the ion implantation region 131 is larger than the inner diameter R1 of the oxidized region 106b (see FIG. 9), the light emitting region can be defined by the inner diameter R1, while the insulating region (capacitance reducing region) can be defined by the inner diameter R3. In other words, since the light emitting region and the insulating region can be defined separately in the VCSEL device 100, it is easy to design the light emission mode of the laser.

[0069] [Manufacturing method of VCSEL element] The following describes a method for manufacturing the VCSEL element 100. Figures 11 to 13 are schematic diagrams showing a method for manufacturing the VCSEL element 100.

[0070] 11, an n-type mirror 102, an n-side spacer layer 103, an active layer 104, a p-side spacer layer 105, a narrowing layer 106, and a p-type mirror 107 are laminated in this order on a substrate 101. These layers can be laminated by epitaxial growth using MOCVD (metal organic chemical vapor deposition).

[0071] 12, a mask M1 using a resist or the like is formed on the p-type mirror 107. Furthermore, ions are implanted from above the mask M1 using an ion implanter to form an ion implanted region 131. A region into which ions are not implanted due to the mask M1 is defined as a non-implanted region 132. The ion implantation depth in the ion implanted region 131 is set to a range in the depth direction (Z direction) that includes at least the active layer 104 and the narrowing layer 106 in the ion implanted region 131.

[0072] The range of the ion implantation region 131 in the depth direction (Z direction) can be adjusted by the acceleration voltage during ion implantation, and the ion concentration can be adjusted by the dose during ion implantation. If the ion implantation region 131 can be implanted to the required range by a single ion implantation, the ions are implanted by a single-stage implantation with a constant acceleration voltage. If the ion implantation region 131 cannot be formed to the required range by a single ion implantation, the ions are implanted by multiple stages of ion implantation.

[0073] Thereafter, mask M1 is removed, and further, mask M2 is formed on p-type mirror 107 as shown in Fig. 13. Furthermore, p-type mirror 107, confinement layer 106, p-side spacer layer 105, active layer 104, n-side spacer layer 103, and n-type mirror 102 are removed by etching using mask M2. The etching can be, for example, dry etching.

[0074] This etching forms a columnar mesa 122 including a non-implanted region 132, and forms a removed surface 122c including the outer peripheral surface 122a and the non-outer peripheral surface 122b. End faces of each layer including the active layer 104 and the narrowing layer 106 are exposed on the outer peripheral surface 122a. At this time, the depth D2 (see FIG. 7) of the ion implanted region 131 from the outer peripheral surface 122a can be determined by the size of the mask M2. In addition, the etching depth (Z direction) is preferably within the depth range of the ion implanted region 131 in the n-type mirror 102. As a result, the ion implanted region 131 provided in the n-type mirror 102 is exposed on the non-outer peripheral surface 122b.

[0075] Furthermore, this laminate is heated in water vapor to oxidize the narrowing layer 106 from the outer periphery. As a result, an oxidized region 106b is formed on the outer periphery of the narrowing layer 106, and a non-oxidized region 106a is formed in the center of the narrowing layer 106. At this time, the oxidation conditions are adjusted so that the depth D1 of the oxidized region 106b from the outer periphery surface 122a is deeper than the depth D2 (see FIG. 9). As a result, the inner diameter R1 of the oxidized region 106b becomes smaller than the inner diameter R3 of the ion implantation region 131, and the non-oxidized region 106a is formed apart from the ion implantation region 131.

[0076] Thereafter, the recess 123 is filled with an insulator 108, and the n-electrode 109, the p-electrode 110, the n-electrode pad 111, and the p-electrode pad 112 are formed, thereby completing the manufacture of the VCSEL device 100.

[0077] In this manufacturing method, the ion implantation region 131 can be formed by adding several steps required for ion implantation (mask formation, ion implantation, mask removal), so there is almost no need to change the manufacturing process. In addition, since the number of steps for ion implantation is small, the process time can be significantly reduced.

[0078] Furthermore, since the deterioration of the mask M1 due to ion implantation can be minimized, even if a very thick (approximately 5 μm or more) and difficult-to-remove mask M1 is used, it can be easily peeled off by immersion in a stripping solution, and residual mask M1 and the associated additional stripping process can be avoided.

[0079] In addition, in the removed surface 122c generated by the etching process for forming the mesa 122, the vicinity of the active layer 104 of the outer peripheral surface 122a and the non-outer peripheral surface 122b become the ion implantation region 131. Here, it is known that the surface processed by dry etching is prone to forming a damaged layer near the surface due to the adsorption of etching gas molecules and physical damage received during processing.

[0080] In the VCSEL device 100, when the active layer 104 is also etched off by dry etching, a damaged layer may be generated by the dry etching on the end face of the active layer 104 at the outer circumferential surface 122a. This damaged layer may cause a decrease in reliability due to the influence of carriers that spread within the active layer 104 when the VCSEL device 100 is driven.

[0081] However, in the VCSEL device 100, the vicinity of the end face of the active layer 104 is insulated by the ion implantation region 131, so that the carriers are shielded from the damaged layer and this is prevented from causing a decrease in reliability. Also, although a damaged layer may be generated by dry etching on the non-peripheral surface 122b, the insulation by the ion implantation region 131 makes it possible to stabilize the etched surface.

[0082] [Effects of VCSEL elements] In the VCSEL device 100, as described above, a reduction in the refractive index occurs due to oxidation in the oxidized region 106b formed in the constriction layer 106, and a region with a low refractive index is formed around the light-emitting portion. This, together with the optical resonator structure formed by the n-type mirror 102 and the p-type mirror 107, achieves high optical confinement in the active layer 104 in a three-dimensional manner. When the optical confinement is improved, the proportion of light that receives stimulated emission gain in the active layer 104 increases, and the effective optical gain becomes a high value, thereby enabling the time response of light to be improved.

[0083] Furthermore, by providing ion implantation region 131 in VCSEL device 100, it is possible to prevent current transmission in the outer peripheral region of mesa 122 and reduce the junction capacitance in the outer peripheral region of mesa 122. This makes it possible to improve the electrical time response of VCSEL device 100. In this way, VCSEL device 100 can improve both the optical time response and the electrical time response, making it possible to achieve high-speed modulation.

[0084] In addition, since the capacitance reduction region can be individually defined by the distribution of the ion implantation region 131 and the light emission region can be individually defined by the distribution of the non-oxidized region 106a, the light emission mode of the laser can be easily designed, and since the light emission region can be separated from the crystal defects caused by etching, the reliability can be improved.

[0085] In terms of productivity, the ion-implanted region 131 can be formed by adding several steps required for ion implantation. Therefore, the VCSEL device 100 has high productivity with almost no need to change the manufacturing process.

[0086] Furthermore, compared to a structure in which pillars are provided around the semiconductor mesa to separate the light-emitting region and the ion-implanted region (see Non-Patent Document 1), the mesa 122 is embedded in insulator 108, which has a lower dielectric constant than the semiconductor, instead of the pillars, so there is no problem with the stray capacitance of the pillars and the effect of reducing capacitance at the outer periphery of mesa 122 by ion implantation can be maximized, making it possible to realize a higher electrical bandwidth (for example, 30 GHz or more).

[0087] In addition, since there are no supports, the injected current does not become a leakage current and is injected into the ion-implanted region 131 and the non-oxidized region 106a without any loss, which means that degradation of the transmission signal (such as noise) and reliability problems caused by leakage current are unlikely to occur.

[0088] [Photoelectric conversion device] The VCSEL element 100 can be used as a light-emitting element in a photoelectric conversion device for communication. As described above, the VCSEL element 100 is capable of high-speed modulation and has high reliability, making it suitable for use in ultra-high-speed optical communications such as communications speeds of 50 Gbps.

[0089] Second Embodiment A vertical cavity surface emitting laser (VCSEL) element according to a second embodiment of the present technology will be described. The VCSEL element according to this embodiment is different from the VCSEL element 100 according to the first embodiment in that an impurity diffusion region is provided, and otherwise has the same configuration. Hereinafter, in the configuration of the VCSEL element according to the second embodiment, the same components as those of the VCSEL element 100 according to the first embodiment are denoted by the same reference numerals as those of the VCSEL element 100, and description thereof will be omitted.

[0090] [VCSEL element structure] Fig. 14 is a cross-sectional view of a VCSEL element 200 according to this embodiment, and Fig. 15 is a plan view of the VCSEL element 100. Fig. 14 is a cross-sectional view taken along line BB in Fig. 15. In the following drawings, the light emission direction of the VCSEL element 200 is designated as the Z direction, a direction perpendicular to the Z direction is designated as the X direction, and a direction perpendicular to the X and Z directions is designated as the Y direction. In the following description, the oscillation wavelength of the VCSEL element 200 is designated as λ.

[0091] As shown in Figures 14 and 15, the VCSEL element 200 includes a substrate 101, an n-type mirror 102, an n-side spacer layer 103, an active layer 104, a p-side spacer layer 105, a confinement layer 106, a p-type mirror 107, an insulator 108, an n-electrode 109, a p-electrode 110, an n-electrode pad 111, and a p-electrode pad 112.

[0092] Each of these configurations is the same as in the first embodiment, and the narrowing layer 106 includes a non-oxidized region 106a and an oxidized region 106b. The non-oxidized region 106a has an inner diameter R1, and the depth of the oxidized region 106b from the outer circumferential surface 122a is defined as a depth D1 (see FIGS. 3 and 4).

[0093] Also in this embodiment, a stack of n-type mirror 102, n-side spacer layer 103, active layer 104, p-side spacer layer 105, constriction layer 106, and p-type mirror 107 is defined as semiconductor stack 121 (see FIG. 3). Furthermore, on the surface of p-type mirror 107, a region surrounded by p-electrode 110 is light emission surface S from which laser light is emitted in VCSEL device 200.

[0094] [Ion implantation and impurity diffusion regions] In the VCSEL element 200, an ion implantation region where ions are implanted and an impurity diffusion region where impurities are diffused are provided in the semiconductor laminate 121. Fig. 16 is a cross-sectional view of the VCSEL element 200 showing the ion implantation region 131 and the impurity diffusion region 231, taken along the line BB shown in Fig. 15. Fig. 17 is a cross-sectional view of the semiconductor laminate 121 showing the ion implantation region 131 and the impurity diffusion region 231, and shows a partial configuration of Fig. 16. Fig. 18 is a plan view of the mesa 122 showing the ion implantation region 131 and the impurity diffusion region 231.

[0095] The ion implantation region 131 is an insulated region in which ions are implanted into the material of the semiconductor laminate 121, as in the first embodiment. As shown in Figs. 16 to 18, the ion implantation region 131 is formed in the n-side spacer layer 103, the active layer 104, the p-side spacer layer 105, and the narrowing layer 106 from the outer circumferential surface 122a of the mesa 122 to a predetermined depth, that is, is formed in a ring shape on the outer periphery of these layers. In Figs. 17 and 18, the depth of the ion implantation region 131 from the outer circumferential surface 122a is shown as depth D2.

[0096] The depth D2 is shallower than the depth D1 (see FIG. 3) of the oxidized region 106b from the outer circumferential surface 122a, and does not reach the non-oxidized region 106a. Therefore, the ion implanted region 131 provided in the constriction layer 106 is separated from the non-oxidized region 106a. In FIGS. 17 and 18, the inner diameter of the ion implanted region 131 is shown as inner diameter R3.

[0097] In addition, ion implantation region 131 is also formed in a part of n-type mirror 102 on the active layer 104 side and in a part of p-type mirror 107 on the active layer 104 side. As shown in Fig. 17, ion implantation region 131 is exposed to non-outer circumferential surface 122b and can be formed to a certain depth from non-outer circumferential surface 122b.

[0098] The ion species of the ions implanted in the ion implantation region 131 can be H, C, B, O, Ar, Al, Ga, or As. Among these, H ions (protons) are preferable because they have the smallest atomic radius and are easy to implant deeply. The implantation amount (dose amount) of ions is 5×10 for H. 14 ions / cm 2 or more is preferable, and for other ion species, 5×10 13 ions / cm 2 The above is preferable.

[0099] Here, the concentration distribution of the ion species in the ion implantation region 131 differs depending on the number of ion implantation stages. When the ion implantation region 131 is formed by one-stage ion implantation, the concentration distribution of the ion species in the direction perpendicular to the layer surface direction (Z direction) has only one peak. On the other hand, when the ion implantation region 131 is formed by multiple-stage ion implantation, the concentration distribution of the ion species in the direction perpendicular to the layer surface direction (Z direction) has multiple peaks.

[0100] It is not necessary that the ion implantation region 131 is provided in all of the above layers, but it is sufficient that it is provided in at least the active layer 104 and the narrowing layer 106 .

[0101] The impurity diffusion region 231 is a region in which impurities are diffused into the material of the semiconductor laminate 121. The impurities may be diffused by thermal diffusion. As shown in Figs. 16 to 18, the impurity diffusion region 231 is formed to a predetermined depth from the outer circumferential surface 122a of the mesa 122 of the p-type mirror 107, and is formed in an annular shape on the outer periphery of the p-type mirror 107. In Figs. 17 and 18, the depth of the impurity diffusion region 231 from the outer circumferential surface 122a is shown as depth D3.

[0102] The depth D3 is deeper than the depth D2, which is the depth of the ion implantation region 131 from the outer circumferential surface 122a. The depth D3 may be deeper or shallower than the depth D1, which is the depth of the oxidized region 106b from the outer circumferential surface 122a, but is preferably approximately the same as the depth D1. In Figures 17 and 18, the inner diameter of the impurity diffusion region 231 is shown as inner diameter R4.

[0103] 19 is a schematic diagram showing the distribution of the ion implantation region 131 and the impurity diffusion region 231 in the layer surface directions (XY directions), and is a diagram showing the mesa 122 as viewed from a direction perpendicular to the layer surface directions (Z direction). In the figure, the ion implantation region 131 is the dotted region, and the impurity diffusion region 231 is the shaded region. As shown in the figure, the impurity diffusion region 231 is provided in a range that overlaps with the ion implantation region 131 when the mesa 122 is viewed from the Z direction.

[0104] 20 is a schematic diagram showing the distribution of the impurity diffusion region 231 in the stacking direction (Z direction). As shown in the figure, if the surface of the mesa 122 parallel to the layer surface direction (XY direction) is taken as surface T1, and the interface of the ion implantation region 131 closest to surface T1 is taken as interface T2, the impurity diffusion region 231 is distributed between surface T1 and interface T2. The impurity diffusion region 231 is exposed to surface T1, and may be separated from interface T2 as shown in FIG. 20, or may be adjacent to interface T2. Note that interface T2 has an impurity concentration due to ion implantation of 1×10 +18 / cm 3 It is possible to make the surface larger.

[0105] The p-electrode 110 is formed on the surface T1, but the impurity diffusion region 231 is exposed at the surface T1, and the p-electrode 110 abuts on the impurity diffusion region 231. Therefore, the impurity diffusion region 231 is formed between the p-electrode 110 and the ion implantation region 131 to a predetermined depth from the outer circumferential surface 122a.

[0106] The impurity forming the impurity diffusion region 231 can be C, Zn or Mg, and the concentration of the impurity can be 1×10 17 / cm 3 The above is preferable. In this embodiment, impurity diffusion region 231 is provided in p-type mirror 107, but if there is a semiconductor layer other than p-type mirror 107 between p-electrode 110 and ion implantation region 131, impurity diffusion region 231 can also be provided in that semiconductor layer.

[0107] The VCSEL element 200 has the above-mentioned configuration. Note that in the VCSEL element 200, the n-type and p-type may be reversed. In this case, the impurity diffusion region 213 is provided in the n-type mirror, and the impurity forming the impurity diffusion region 231 may be Si, S or Se. In this case, the impurity concentration is also 1×10 17 / cm 3 The above is preferable

[0108] [VCSEL element operation] The operation of the VCSEL element 200 will now be described. Fig. 21 is a schematic diagram showing the operation of the VCSEL element 200. The VCSEL element 200 operates in the same manner as the VCSEL element 100 according to the first embodiment. That is, when a voltage is applied between the n-electrode 109 and the p-electrode 110, a current is injected into the non-oxidized region 106a as shown by the arrow C in Fig. 21.

[0109] This injected current generates spontaneous emission light F, which is reflected by n-type mirror 102 and p-type mirror 107. N-type mirror 102 and p-type mirror 107 are configured to reflect light having an oscillation wavelength λ, and laser light L generated by laser oscillation is emitted from light emission surface S.

[0110] Here, in the VCSEL element 200, by providing the ion implantation region 131, it is possible to prevent current transmission in the outer peripheral region of the mesa 122 as in the first embodiment, reduce the junction capacitance in the outer peripheral region of the mesa 122, and improve the electrical bandwidth of the VCSEL element 200. Furthermore, by providing the impurity diffusion region 231 in the VCSEL element 200, it is possible to reduce the electrical resistance between the p-electrode 110 and the non-oxidized region 106a, as will be described later.

[0111] [Manufacturing method of VCSEL element] The following describes a method for manufacturing the VCSEL device 100. Figures 22 to 24 are schematic diagrams showing a method for manufacturing the VCSEL device 200.

[0112] As in the first embodiment, each layer is laminated on the substrate 101 (see FIG. 11), and a mask M1 using a resist or the like is formed on the p-type mirror 107 (see FIG. 12). Ions are implanted from above this mask M1 using an ion implanter to form an ion implanted region 131. A region into which ions are not implanted due to the mask M1 is defined as a non-implanted region 132. The ion implantation depth in the ion implanted region 131 is set to a range in the depth direction (Z direction) that at least includes the active layer 104 and the narrowing layer 106 in the ion implanted region 131.

[0113] The range of the ion implantation region 131 in the depth direction (Z direction) can be adjusted by the acceleration voltage during ion implantation, and the ion concentration can be adjusted by the dose during ion implantation. If the ion implantation region 131 can be implanted to the required range by a single ion implantation, the ions are implanted by a single-stage implantation with a constant acceleration voltage. If the ion implantation region 131 cannot be formed to the required range by a single ion implantation, the ions are implanted by multiple stages of ion implantation.

[0114] Thereafter, mask M1 is removed, and mask M3 is formed on p-type mirror 107 as shown in Fig. 22. Mask M3 can be a film of a dielectric material such as SiO2. Mask M3 has openings on the surface of p-type mirror 107 so as to expose the regions through which ions have passed in the ion implantation process.

[0115] 23, the impurities are diffused using a mask M3 to form an impurity diffusion region 231. The impurities can be diffused by thermal diffusion, and thermal diffusion in a gas phase containing the impurity components or solid-phase thermal diffusion in which a solid containing the impurity components is brought into contact and heated can be used. In thermal diffusion, the depth of the impurity diffusion can be adjusted by the heating temperature and heating time, and the impurity diffusion region 231 can be set to a depth that does not exceed the interface T2 (see FIG. 20) of the ion implantation region 131.

[0116] Specifically, when the impurity to be diffused is Zn, the gas phase containing the impurity component is diethylzinc or dimethylzinc, and the solid containing the impurity component is ZnO. When the impurity to be diffused is C, the gas phase containing the impurity component is CBr4 (carbon tetrabromide), and the solid containing the impurity component is a carbon film. When the impurity to be diffused is Mg, the gas phase containing the impurity component is Cp2Mg (cyclopentadienylmagnesium), and the solid containing the impurity component is an MgO film.

[0117] It should be noted that the impurity diffusion region 231 can also be formed by diffusing the impurity by a method other than thermal diffusion. For example, the impurity diffusion region 231 can be formed by ion implantation.

[0118] Thereafter, mask M3 is removed, and further, mask M2 is formed on p-type mirror 107 as shown in Fig. 24. Furthermore, mask M2 is used to remove p-type mirror 107, narrowing layer 106, p-side spacer layer 105, active layer 104, n-side spacer layer 103, and n-type mirror 102 by etching. The etching can be, for example, dry etching.

[0119] This etching forms a columnar mesa 122 including a non-implanted region 132, and forms a removed surface 122c including the outer peripheral surface 122a and the non-outer peripheral surface 122b. End faces of each layer including the active layer 104 and the narrowing layer 106 are exposed on the outer peripheral surface 122a. At this time, the depth D2 (see FIG. 17) of the ion implanted region 131 from the outer peripheral surface 122a and the depth D3 (see FIG. 17) of the impurity diffusion region 231 can be determined depending on the size of the mask M2. In addition, the etching depth (Z direction) is preferably within the depth range of the ion implanted region 131 in the n-type mirror 102. As a result, the ion implanted region 131 provided in the n-type mirror 102 is exposed on the non-outer peripheral surface 122b.

[0120] Furthermore, this laminate is heated in water vapor to oxidize the narrowing layer 106 from the outer periphery. As a result, an oxidized region 106b is formed on the outer periphery of the narrowing layer 106, and a non-oxidized region 106a is formed in the center of the narrowing layer 106. At this time, the oxidation conditions are adjusted so that the depth D1 of the oxidized region 106b from the outer periphery surface 122a is deeper than the depth D2 (see FIG. 9). As a result, the inner diameter R1 of the oxidized region 106b becomes smaller than the inner diameter R3 of the ion implantation region 131, and the non-oxidized region 106a is formed apart from the ion implantation region 131.

[0121] Thereafter, the recess 123 is filled with an insulator 108, and the n-electrode 109, the p-electrode 110, the n-electrode pad 111, and the p-electrode pad 112 are formed, thereby completing the manufacture of the VCSEL device 200.

[0122] In this manufacturing method, the ion implantation region 131 and the impurity diffusion region 231 can be formed by adding several steps required for ion implantation and impurity diffusion (mask formation, ion implantation, impurity diffusion, mask removal), so there is almost no need to change the manufacturing process. In addition, since the number of steps for ion implantation is small, the process time can be significantly reduced.

[0123] Furthermore, the deterioration of the mask M1 due to ion implantation can be minimized, and the mask M1 remaining and the additional peeling process associated therewith can be avoided. In addition, the ion implantation region 131 is formed near the end face of the active layer 104 and insulated, so that the carriers are shielded from the damaged layer, preventing the cause of the deterioration of reliability. The non-peripheral surface 122b is also insulated by the ion implantation region 131, so that the etched surface can be stabilized.

[0124] [Effects of VCSEL elements] In the VCSEL device 200, as in the first embodiment, a reduction in the refractive index due to oxidation occurs in the oxidized region 106b formed in the constriction layer 106, and a region with a low refractive index is formed around the light emitting portion. This, together with the optical resonator structure formed by the n-type mirror 102 and the p-type mirror 107, achieves high optical confinement in the active layer 104 in a three-dimensional manner. When the optical confinement is improved, the proportion of light that receives stimulated emission gain in the active layer 104 increases, and the effective optical gain becomes a high value, thereby enabling the time response of light to be improved.

[0125] Furthermore, by providing ion implantation region 131 in VCSEL element 200, it is possible to prevent current transmission in the outer peripheral region of mesa 122 and reduce the junction capacitance in the outer peripheral region of mesa 122. This makes it possible to improve the electrical time response of VCSEL element 200. In this way, VCSEL element 200 can improve both the optical time response and the electrical time response, making it possible to achieve high-speed modulation.

[0126] Furthermore, by providing the impurity diffusion region 231 in the VCSEL element 200, the following effects can be obtained. Figures 25 and 26 are schematic diagrams showing the effects of the impurity diffusion region 231. As shown in Figure 25, an ion passage region P is formed above the ion implantation region 131. The ion passage region P is a region through which ions have passed in the ion implantation process, and the passage of the ions has damaged the crystal structure of the p-type mirror 107.

[0127] For this reason, the electrical resistance of the ion passing region P becomes large, and the current (indicated by the arrow C in the figure) flowing from the p-electrode 110 to the p-type mirror 107 may be concentrated near the inner edge E of the p-electrode 110. In this case, the electrical resistance of the entire element becomes large.

[0128] 26, in the VCSEL element 200, an impurity diffusion region 231 is provided between the p-electrode 110 and the ion implantation region 131 so as to overlap with the ion passage region P. In the impurity diffusion region 231, damage to the crystal structure is repaired by the diffusion of impurities, and the electrical resistance is reduced. This prevents current from concentrating on the inner periphery E of the p-electrode 110, making it possible to reduce the electrical resistance of the entire element.

[0129] Therefore, in the VCSEL element 200, it is possible to improve both the optical time response and the electrical time response, and it is also possible to improve the electrical characteristics and improve the electrical band by reducing the resistance of the element.

[0130] [Photoelectric conversion device] The VCSEL element 200 can be used as a light-emitting element in a photoelectric conversion device for communication. As described above, the VCSEL element 200 is capable of high-speed modulation and has high reliability, making it suitable for use in ultra-high-speed optical communications such as communications speeds of 50 Gbps.

[0131] The present technology can also be configured as follows.

[0132] (1) a first mirror having a first conductivity type; a second mirror having a second conductivity type and causing optical resonance with the first mirror; an active layer provided between the first mirror and the second mirror; a constriction layer provided between the first mirror and the second mirror, the constriction layer having a non-oxidized region made of a conductive material and an oxidized region provided around the non-oxidized region and made of an insulating material obtained by oxidizing the conductive material; a mesa having an outer circumferential surface at which end faces of the active layer and the narrowing layer are exposed; and an ion-implanted region, which is an ion-implanted region formed in the active layer and the narrowing layer to a predetermined depth from the outer circumferential surface and is separated from the non-oxidized region. A vertical cavity surface emitting laser device comprising: (2) The vertical cavity surface emitting laser element according to (1) above, the mesa is formed by partial removal of the semiconductor laminate; The ion implantation region is exposed at a removal surface formed by partially removing the semiconductor laminate. Vertical-cavity surface-emitting laser element. (3) The vertical cavity surface emitting laser element according to (2) above, An insulator provided around the mesa and covering the removal surface. The vertical cavity surface emitting laser element further comprises: (4) The vertical cavity surface emitting laser element according to any one of (1) to (3), The ion implantation region has a concentration distribution of the ion species having one peak in a direction perpendicular to the layer surface direction. Vertical-cavity surface-emitting laser element. (5) The vertical cavity surface emitting laser element according to any one of (1) to (4), 2. The vertical cavity surface emitting laser element according to claim 1, The ion species is H, The implantation dose of the above ion species is 5×10 14 ions / cm 2 That's all. Vertical-cavity surface-emitting laser element. (6) The vertical cavity surface emitting laser element according to any one of (1) to (4), the ion species is C, B, O, Ar, Al, Ga or As; The implantation dose of the above ion species is 5×10 13 ions / cm 2 That's all. Vertical-cavity surface-emitting laser element. (7) The vertical cavity surface emitting laser element according to any one of (1) to (6), The mesa has a surface parallel to a layer plane direction, the vertical cavity surface emitting laser element further comprises an electrode formed on the surface; The semiconductor laminate further includes an impurity diffusion region formed between the electrode and the ion implantation region and extending from the outer circumferential surface to a predetermined depth, in which an impurity is diffused. Vertical-cavity surface-emitting laser element. (8) The vertical cavity surface emitting laser element according to (7) above, The impurity diffusion region is a region in which the impurities are thermally diffused. Vertical-cavity surface-emitting laser element. (9) The vertical cavity surface emitting laser element according to (7) or (8), The impurity diffusion region is provided in a range overlapping with the ion implantation region when the mesa is viewed from a direction perpendicular to the layer surface direction. Vertical-cavity surface-emitting laser element. (10) The vertical cavity surface emitting laser element according to any one of (7) to (9), The impurity diffusion region has an impurity concentration of 1×10 17 / cm 3 That's all. Vertical-cavity surface-emitting laser element. (11) The vertical cavity surface emitting laser element according to any one of (7) to (10), the impurity diffusion region is provided in the first mirror, The first conductivity type is p-type, The impurities are C, Zn or Mg. Vertical-cavity surface-emitting laser element. (12) The vertical cavity surface emitting laser element according to any one of (7) to (9), the impurity diffusion region is provided in the first mirror, The first conductivity type is n-type, The impurity is Si, S or Se. Vertical-cavity surface-emitting laser element. (13) forming a semiconductor laminate including a first mirror having a first conductivity type, a second mirror having a second conductivity type and causing optical resonance with the first mirror, an active layer provided between the first mirror and the second mirror, and a constriction layer provided between the first mirror and the second mirror; In the semiconductor laminate, ions are implanted from a direction perpendicular to the layer surface direction, excluding a non-implanted region, to form an ion-implanted region; etching the semiconductor laminate to form a mesa including the non-implanted region, the mesa having an outer circumferential surface on which end faces of the active layer and the constriction layer are exposed, and the ion implanted region is distributed in the active layer and the constriction layer from the outer circumferential surface to a first depth; The narrowing layer is oxidized from the outer circumferential surface to form an oxidized region in the narrowing layer from the outer circumferential surface to a second depth deeper than the first depth. A method for manufacturing a vertical cavity surface emitting laser device. (14) A method for manufacturing the vertical cavity surface emitting laser element according to (13) above, A step of diffusing impurities in the semiconductor laminate to form an impurity diffusion region. The method for manufacturing a vertical cavity surface emitting laser element further includes the steps of: (15) A method for manufacturing the vertical cavity surface emitting laser element according to (14) above, The step of forming the impurity diffusion region is performed after the step of forming the ion implantation region and before the step of forming the mesa, and the impurity is diffused into the region through which the ions have passed in the step of forming the ion implantation region. A method for manufacturing a vertical cavity surface emitting laser device. (16) A method for manufacturing a vertical cavity surface emitting laser element according to (14) or (15) above, The step of forming the impurity diffusion region includes diffusing the impurities by thermal diffusion. A method for manufacturing a vertical cavity surface emitting laser device. (17) a first mirror having a first conductivity type, a second mirror having a second conductivity type and causing optical resonance with the first mirror, an active layer provided between the first mirror and the second mirror, and a constriction layer provided between the first mirror and the second mirror, the constriction layer having a non-oxidized region made of a conductive material and an oxidized region made of an insulating material obtained by oxidizing the conductive material, the constriction layer being provided around the non-oxidized region, the constriction layer having a mesa having an outer circumferential surface where end faces of the active layer and the constriction layer are exposed, and an ion-implanted region which is an ion-implanted region, the ion-implanted region being formed in the active layer and the constriction layer to a predetermined depth from the outer circumferential surface and spaced apart from the non-oxidized region A photoelectric conversion device comprising: (18) The photoelectric conversion device according to (17), The mesa has a surface parallel to a layer plane direction, the vertical cavity surface emitting laser element further comprises an electrode formed on the surface; The semiconductor laminate further includes an impurity diffusion region formed between the electrode and the ion implantation region and extending from the outer circumferential surface to a predetermined depth, in which an impurity is diffused. Photoelectric conversion device. [Explanation of symbols]

[0133] 100, 200...VCSEL element 101...Substrate 102...n-type mirror 103...n-side spacer layer 104…Active layer 105...p-side spacer layer 106...Stenosis layer 106a...Non-oxidized area 106b…oxidation area 107...p-type mirror 108...Insulator 109...n electrode 110...p electrode 111...n electrode pad 112...p electrode pad 121...Semiconductor laminate 122…Mesa 122a...Outer surface 122b…Non-outer surface 122c…removal surface 123…Recess 131...Ion implantation region 132…Non-injection area 231...Impurity diffusion region

Claims

1. a first mirror having a first conductivity type; a second mirror having a second conductivity type and causing optical resonance with the first mirror; an active layer provided between the first mirror and the second mirror; a constriction layer provided between the first mirror and the second mirror, the constriction layer having a non-oxidized region made of a conductive material and an oxidized region provided around the non-oxidized region and made of an insulating material obtained by oxidizing the conductive material; a mesa having an outer circumferential surface where end faces of the active layer and the narrowing layer are exposed; an ion-implanted region which is a region into which ions are implanted and which is formed in the active layer and the narrowing layer from the outer circumferential surface to a predetermined depth and is separated from the non-oxidized region; and an impurity diffusion region which is formed between an electrode formed on a surface of the mesa and the ion-implanted region from the outer circumferential surface to a predetermined depth and in which impurities are diffused. A vertical cavity surface emitting laser device comprising:

2. 2. The vertical cavity surface emitting laser element according to claim 1, the mesa is formed by partial removal of the semiconductor stack; The ion implantation region is exposed at a removal surface formed by partially removing the semiconductor laminate. Vertical-cavity surface-emitting laser element.

3. 3. The vertical cavity surface emitting laser element according to claim 2, An insulator provided around the mesa and covering the removal surface. The vertical cavity surface emitting laser element further comprises:

4. 2. The vertical cavity surface emitting laser element according to claim 1, The ion implantation region has a concentration distribution of the ion species having one peak in a direction perpendicular to the layer surface direction. Vertical-cavity surface-emitting laser element.

5. 2. The vertical cavity surface emitting laser element according to claim 1, the ion species is H, The implantation dose of the ion species is 5×10 １４ ions / cm ２ That's all. Vertical-cavity surface-emitting laser element.

6. 2. The vertical cavity surface emitting laser element according to claim 1, the ion species is C, B, O, Ar, Al, Ga or As; The implantation dose of the ion species is 5×10 １３ ions / cm ２ That's all. Vertical-cavity surface-emitting laser element.

7. 2. The vertical cavity surface emitting laser element according to claim 1, The impurity diffusion region is a region in which the impurities are thermally diffused. Vertical-cavity surface-emitting laser element.

8. 2. The vertical cavity surface emitting laser element according to claim 1, The impurity diffusion region is provided in a range overlapping with the ion implantation region when the mesa is viewed from a direction perpendicular to the layer surface direction. Vertical-cavity surface-emitting laser element.

9. 2. The vertical cavity surface emitting laser element according to claim 1, The impurity diffusion region has an impurity concentration of 1×10 １７ / cm ３ That's all. Vertical-cavity surface-emitting laser element.

10. 2. The vertical cavity surface emitting laser element according to claim 1, the impurity diffusion region is provided in the first mirror, the first conductivity type is p-type; The impurity is C, Zn or Mg. Vertical-cavity surface-emitting laser element.

11. 2. The vertical cavity surface emitting laser element according to claim 1, the impurity diffusion region is provided in the first mirror, the first conductivity type is n-type; The impurity is Si, S or Se. Vertical-cavity surface-emitting laser element.

12. forming a semiconductor laminate including a first mirror having a first conductivity type, a second mirror having a second conductivity type and causing optical resonance with the first mirror, an active layer provided between the first mirror and the second mirror, and a constriction layer provided between the first mirror and the second mirror; In the semiconductor laminate, ions are implanted from a direction perpendicular to a layer surface direction, excluding a non-implanted region, to form an ion implanted region; forming an impurity diffusion region by diffusing the impurity into a region in the semiconductor laminate through which the ions have passed; etching the semiconductor laminate to form a mesa including the non-implanted region, the mesa having an outer peripheral surface at which end faces of the active layer and the constriction layer are exposed, and the ion implanted region is distributed in the active layer and the constriction layer from the outer peripheral surface to a first depth; The narrowing layer is oxidized from the outer circumferential surface to form an oxidized region in the narrowing layer from the outer circumferential surface to a second depth deeper than the first depth. A method for manufacturing a vertical cavity surface emitting laser device.

13. A method for manufacturing the vertical cavity surface emitting laser element according to claim 12, comprising the steps of: The step of forming the impurity diffusion region includes diffusing the impurities by thermal diffusion. A method for manufacturing a vertical cavity surface emitting laser device.

14. a first mirror having a first conductivity type, a second mirror having a second conductivity type and causing optical resonance with the first mirror, an active layer provided between the first mirror and the second mirror, and a constriction layer having a non-oxidized region made of a conductive material and an oxidized region made of an insulating material obtained by oxidizing the conductive material and provided around the non-oxidized region, the vertical cavity surface emitting laser element comprising a semiconductor laminate having a mesa having an outer circumferential surface at which end faces of the active layer and the constriction layer are exposed, an ion implantation region which is a region into which ions are implanted and which is formed in the active layer and the constriction layer from the outer circumferential surface to a predetermined depth and is separated from the non-oxidized region, and an impurity diffusion region which is formed between an electrode formed on a surface of the mesa and the ion implantation region to a predetermined depth from the outer circumferential surface and in which impurities are diffused A photoelectric conversion device comprising:

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