Holding device

Abstract

To provide a holding device which allows improvement in temperature control performance on a holding surface.SOLUTION: An electrostatic chuck comprises: a plate-like member 10 having a holding surface, a lower surface provided on the opposite side to the holding surface, and a heater electrode disposed on a plane substantially perpendicular to a Z-axis direction, between the holding surface and the lower surface, or on the lower surface; a base member 20 having an upper surface and a lower surface which is provided on the opposite side to the upper surface; and a bonding layer 40 which is disposed between the lower surface of the plate-like member 10 and the upper surface of the base member 20 so as to bond the plate-like member 10 to the base member 20. The electrostatic chuck holds an object on the holding surface of the plate-like member 10. The heater electrode is disposed in each of a plurality of zones defined as heating zones 61, 62, and 63. The bonding layer 40 includes portions divided so as to correspond to the heating zones 61, 62, and 63.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present disclosure relates to a holding device for holding an object. [Background technology]

[0002] As a conventional technique relating to a holding device, for example, Patent Document 1 discloses an electrostatic chuck (holding device) including an electrostatic puck (first member) that holds an object on a holding surface, a temperature control base (second member), and an adhesive layer (bonding layer) that bonds the electrostatic puck to the temperature control base. In this electrostatic chuck, when bonding the electrostatic puck to the temperature control base, the adhesive layer is divided so that volatile gas generated from the adhesive layer during hardening is not trapped within the adhesive layer, thereby allowing the volatile gas to escape from between the electrostatic chuck and the temperature control base. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-137480 A Summary of the Invention [Problem to be solved by the invention]

[0004] Here, in the holding device, in order to perform accurate temperature control on the holding surface of the first member, a plurality of heating resistors may be provided on the first member, and each heating resistor may be arranged for each heating zone divided into a plurality of zones. In such a case, if the bonding layer is divided as in the above-mentioned holding device, each heating zone and the divided area of ​​the bonding layer do not match, and heat transfer at the divided parts of the bonding layer may deteriorate, and the effect of temperature adjustment for each heating zone may not be fully obtained, and the temperature control on the holding surface of the first member may not be performed accurately. In addition, if the bonding layer is not divided, the temperature gradient becomes small at the boundary between each heating zone, making it difficult to generate a clear temperature difference, and therefore the temperature control in each heating zone may not be performed accurately, and the temperature control on the holding surface of the first member may not be performed accurately.

[0005] Therefore, the present disclosure has been made to solve the above-mentioned problems, and has an object to provide a holding device that can improve the temperature controllability on the holding surface. [Means for solving the problem]

[0006] In order to solve the above problems, one aspect of the present disclosure is to a first member including a first surface, a second surface provided on an opposite side of the first surface in a first direction, and a heating resistor disposed on a plane between the first surface and the second surface or on the second surface, the plane being substantially perpendicular to the first direction; a second member including a third surface and a fourth surface provided on an opposite side of the third surface in the first direction; a bonding layer disposed between the second surface of the first member and the third surface of the second member, bonding the first member and the second member; A holding device for holding an object on the first surface of the first member, The heating resistors are arranged in each of a plurality of heating zones, The bonding layer includes a portion that is divided to correspond to each of the heating zones.

[0007] In this holding device, a heating resistor provided on a first member that holds an object is arranged in each heating zone that is divided into a plurality of zones, and a bonding layer that bonds the first member and the second member includes a portion that is divided according to each heating zone. The heating resistor is controlled independently for each heating zone. As a result, the bonding layer is divided along the boundary of each heating zone, and the first member and the bonding layer do not contact each other at the divided portion of the bonding layer. Therefore, the heat transfer between the first member and the bonding layer is deteriorated at the divided portion of the bonding layer, that is, at the boundary of each heating zone. Therefore, at the boundary of each heating zone, the temperature gradient becomes large and a clear temperature difference occurs, so that the temperature control in each heating zone can be performed with high accuracy, and the temperature controllability (resolution) on the holding surface can be improved.

[0008] In the above-mentioned holding device, There is a gap between the divided bonding layers, It is preferable that the gap does not overlap the heating resistor when viewed from the first direction.

[0009] In this way, by arranging the gaps between the divided bonding layers, the bonding layer can be divided to correspond precisely to the boundaries of the heating zones. This allows each heating zone to match the divided areas of the bonding layer with precision, so that a clearer temperature difference occurs at the boundaries of each heating zone, and the temperature controllability (resolution) in each heating zone can be further improved.

[0010] In the above-mentioned holding device, The second member has a through hole formed therein, the through hole penetrating the third surface and the fourth surface, a hole communicating with the through hole in the first direction is formed in the bonding layer; It is preferable that any of the gaps connected to the hole be filled with adhesive near the hole and closed.

[0011] As a result, in the first surface, around the through hole, which is prone to becoming hot, the adhesive filled in the gap between the divided bonding layers promotes heat transfer between the second component and the first component, thereby suppressing the temperature rise around the through hole. Furthermore, in cases where the through hole is a hole that is connected to the atmosphere, such as a terminal hole or a temperature sensor hole, the adhesive blocks connection to the atmosphere, so that the gaps between the divided bonding layers can be kept airtight (vacuum).

[0012] In the above-mentioned holding device, The adhesive is preferably an addition reaction type adhesive.

[0013] In this way, by using an addition reaction type adhesive rather than a condensation reaction type adhesive, gas is not generated during the curing reaction of the adhesive, which prevents shrinkage. This ensures that the gaps between the divided bonding layers are airtightly sealed, and also promotes heat transfer in the areas where the gaps are sealed with the adhesive. Effect of the Invention

[0014] According to the present disclosure, it is possible to provide a holding device capable of improving the temperature controllability on the holding surface. [Brief description of the drawings]

[0015] [Figure 1] 1 is a schematic perspective view of an electrostatic chuck according to an embodiment; [Diagram 2] 1 is a schematic configuration diagram of an electrostatic chuck of an embodiment of the present invention taken along an XZ cross section. [Diagram 3] 5 is a diagram showing the positional relationship between heating zones and heater electrodes in a plate-like member. FIG. [Figure 4] FIG. [Diagram 5] FIG. 2 is an exploded perspective view of the electrostatic chuck according to the embodiment; [Figure 6] 13 is a diagram showing a part of a heating zone in a plate-shaped member of a modified example. FIG. [Figure 7]FIG. 13 is a diagram showing a part of a bonding layer according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] A holding device according to an embodiment of the present disclosure will be described in detail with reference to the drawings. In this embodiment, an electrostatic chuck used in a semiconductor manufacturing device such as a film forming device (such as a CVD film forming device or a sputtering film forming device) or an etching device (such as a plasma etching device) will be described as an example.

[0017] An electrostatic chuck 1 of the present embodiment will be described with reference to Figs. 1 to 5. The electrostatic chuck 1 of the present embodiment is a device that attracts and holds a semiconductor wafer W (object) by electrostatic attraction, and is used, for example, to fix the semiconductor wafer W in a vacuum chamber of a semiconductor manufacturing device. As shown in Fig. 1, the electrostatic chuck 1 has a plate-shaped member 10, a base member 20, and a bonding layer 40 that bonds the plate-shaped member 10 and the base member 20. The plate-shaped member 10 is an example of a "first member" in the present disclosure, and the base member 20 is an example of a "second member" in the present disclosure.

[0018] In the following description, for convenience of explanation, the XYZ axes are defined as shown in Fig. 1. Here, the Z axis is an axis in the axial direction of the electrostatic chuck 1 (the vertical direction in Fig. 1), and the X and Y axes are axes in the radial direction of the electrostatic chuck 1. The Z axis direction is an example of a "first direction" in the present disclosure.

[0019] As shown in Fig. 1, the plate-like member 10 is a disk-shaped member and is made of ceramics. Various ceramics can be used as the ceramics, but from the viewpoints of strength, wear resistance, plasma resistance, etc., it is preferable to use ceramics whose main component is, for example, aluminum oxide (alumina, Al2O3) or aluminum nitride (AlN). Note that the main component here means the component with the highest content (for example, a component with a volume content of 90 vol% or more).

[0020] The diameter of the plate-shaped member 10 is, for example, about 150 mm to 300 mm at the upper portion and about 180 mm to 350 mm at the lower portion. The thickness of the plate-shaped member 10 is, for example, about 2 mm to 6 mm. The thermal conductivity of the plate-shaped member 10 is preferably within a range of 10 W / mK to 50 W / mK (more preferably, 18 W / mK to 30 W / mK).

[0021] As shown in Figs. 1 and 2, the plate-shaped member 10 has a holding surface 11 for holding a semiconductor wafer W, and a bottom surface 12 provided on the opposite side of the holding surface 11 in the thickness direction of the plate-shaped member 10 (a direction that coincides with the Z-axis direction, a vertical direction). A cylindrical bottomed hole 15 is formed on the bottom surface 12 side. Examples of the bottomed hole 15 include a terminal hole in which a terminal pad that electrically connects to an internal electrode (such as a chuck electrode or a heater electrode) arranged in the plate-shaped member 10 is arranged, and a sensor hole in which a temperature sensor that measures the temperature of the plate-shaped member 10 is arranged. The holding surface 11 is an example of a "first surface" in the present disclosure, and the bottom surface 12 is an example of a "second surface" in the present disclosure.

[0022] 2, a chuck electrode 50 made of a conductive material (e.g., tungsten, molybdenum, platinum, etc.) is provided inside the plate-like member 10. The shape of the chuck electrode 50 as viewed in the Z-axis direction is, for example, substantially circular. When power is supplied to the chuck electrode 50 from a power source (not shown), an electrostatic attraction force (adsorption force) is generated, and the semiconductor wafer W is adsorbed and fixed to the holding surface 11 of the plate-like member 10 by this electrostatic attraction force.

[0023] Further, heater electrodes 51, 52, and 53 made of a conductive material (for example, tungsten, molybdenum, platinum, etc.) are provided inside the plate-shaped member 10. These heater electrodes 51, 52, and 53 are respectively arranged in a plurality of (three in this embodiment) heating zones 61, 62, and 63 arranged concentrically as viewed in the Z-axis direction on the same plane as shown in Fig. 3. That is, the heater electrode 51 is arranged in one circular heating zone 61 including the axial center of the plate-shaped member 10, the heater electrode 52 is arranged in an annular heating zone 62 surrounding the outer periphery of the heating zone 61 in a band shape, and the heater electrode 53 is arranged in an annular heating zone 63 surrounding the outer periphery of the heating zone 62 in a band shape.

[0024] The heater electrodes 51, 52, and 53 are formed of long heating lines with a line width of about 0.1 mm to 10 mm and a thickness (dimension in the Z-axis direction) of about 0.02 mm to 3 mm. The heater electrodes 51, 52, and 53 are formed in a pattern that matches the shapes of the heating zones 61, 62, and 63. Specifically, the heater electrode 51 is circular to match the shape of the circular heating zone 61. The heater electrodes 52 and 53 are curved to follow the curvature of the inner and outer circumferences to match the shapes of the annular heating zones 62 and 63, and are bent into a U-shape at one end in the circumferential direction. The heater electrodes 51, 52, and 53 are supplied with power separately from a power source (not shown), so that the heater electrodes 51, 52, and 53 are independently controlled, and the temperature of each of the heating zones 61, 62, and 63 is adjusted, so that the semiconductor wafer W held on the holding surface 11 is uniformly heated.

[0025] 1 and 2, the base member 20 is cylindrical, more specifically, a stepped cylindrical shape formed by stacking two cylinders of different diameters with a common central axis, with the lower surface of the cylinder with the smaller diameter placed on the upper surface of the cylinder with the larger diameter. The base member 20 is preferably made of metal (e.g., aluminum, aluminum alloy, etc.), but may be made of a material other than metal (e.g., ceramics, etc.).

[0026] The base member 20 has an upper surface 21 and a lower surface 22 provided on the opposite side to the upper surface 21 in the central axis direction (i.e., the Z-axis direction) of the base member 20 (plate-shaped member 10). The upper surface 21 is an example of a "third surface" in the present disclosure, and the lower surface 22 is an example of a "fourth surface" in the present disclosure.

[0027] The diameter of the base member 20 is, for example, about 150 mm to 300 mm at the upper stage and about 180 mm to 350 mm at the lower stage. The thickness (dimension in the Z-axis direction) of the base member 20 is, for example, about 20 mm to 50 mm. The thermal conductivity of the base member 20 (assumed to be aluminum) is greater than that of the plate-like member 10, and is desirably within the range of 180 W / mK to 250 W / mK (preferably about 230 W / mK).

[0028] 2, the base member 20 is formed with a coolant flow path 23 for flowing a coolant (e.g., a fluorine-based inert liquid, water, etc.). The coolant flow path 23 is connected to a supply port and a discharge port (not shown) provided on the lower surface 22 of the base member 20, and the coolant supplied to the base member 20 from the supply port flows through the coolant flow path 23 and is discharged from the discharge port to the outside of the base member 20. In this way, the base member 20 is cooled by flowing the coolant through the coolant flow path 23 of the base member 20, and the plate-like member 10 is thereby cooled via the bonding layer 40.

[0029] A cylindrical through hole 25 is formed in the base member 20, penetrating in the thickness direction (Z-axis direction, vertical direction in FIG. 2) between the upper surface 21 and the lower surface 22. The through hole 25 is coaxial with the bottomed hole 15 and has the same inner diameter.

[0030] The bonding layer 40 is disposed between the lower surface 12 of the plate-shaped member 10 and the upper surface 21 of the base member 20, and bonds the plate-shaped member 10 and the base member 20. The lower surface 12 of the plate-shaped member 10 and the upper surface 21 of the base member 20 are thermally connected via the bonding layer 40. The bonding layer 40 is made of an adhesive material such as a silicone resin, an acrylic resin, or an epoxy resin. The thickness (dimension in the Z-axis direction) of the bonding layer 40 is, for example, about 0.1 mm to 5.0 mm. The thermal conductivity of the bonding layer 40 is, for example, 1.0 W / mK. The thermal conductivity of the bonding layer 40 (assuming a silicone resin) is preferably within a range of 0.1 W / mK to 2.0 W / mK (preferably, 0.5 W / mK to 1.5 W / mK).

[0031] As shown in FIG. 2 and FIG. 4, the bonding layer 40 has a hole 45 that communicates the bottomed hole 15 and the through hole 25. That is, a cylindrical hole 45 is formed between the bottomed hole 15 and the through hole 25. The hole 45 is coaxial with the bottomed hole 15 and the through hole 25. The diameter of the hole 45 is larger than the diameter of the bottomed hole 15 and the through hole 25. The bottomed hole 15, the hole 45, and the through hole 25 are arranged in a continuous manner in the Z-axis direction (the axial direction of the electrostatic chuck 1). As shown in FIG. 2, the bottomed hole 15, the hole 45, and the through hole 25 form a terminal hole in which a terminal pad and a power supply terminal are arranged, a temperature sensor hole in which a temperature sensor and wiring are arranged, and the like.

[0032] In this embodiment, only the holes 45 corresponding to the bottomed holes 15 such as the terminal holes and the temperature sensor holes are illustrated in the bonding layer 40, but when the electrostatic chuck 1 is provided with lift pin insertion holes, gas holes, etc., holes corresponding to the lift pin insertion holes, gas holes, etc. are formed in the bonding layer 40. When the lift pin insertion holes and gas holes are provided, the plate-like member 10 is provided with through holes instead of the bottomed holes 15.

[0033] As shown in FIG. 4, the bonding layer 40 is divided according to the heating zones 61, 62, and 63 formed on the plate-like member 10, and there are circumferential gaps 41 and 42 between the divided bonding layers. That is, as shown in FIG. 5, the gap 41 of the bonding layer 40 is located directly below the boundary between the heating zones 61 and 62 so as to include the boundary, and the gap 42 of the bonding layer 40 is located directly below the boundary between the heating zones 62 and 63 so as to include the boundary. These gaps 41 and 42 can be formed, for example, by cutting out the sheet-like bonding layer 40 according to the shape of the gap. As a result, the gaps 41 and 42 do not overlap the heater electrodes 51, 52, and 53 when viewed in the Z-axis direction. The width of these gaps 41 and 42 is, for example, about 1.0 mm to 5.0 mm. In this embodiment, a hole 45 is formed in a part of the gap 42.

[0034] The gaps 42 connected to the holes 45 formed in the bonding layer 40 are filled with adhesive 46 near the holes 45 and blocked. The vicinity of the holes means, for example, about 2.0 mm. The adhesive 46 is an addition reaction type adhesive, and is in a paste (granular) state before hardening. For one portion of the gaps 42, the adhesive 46 is applied along the gaps 42 for a length of about 2 mm to 5 mm (for example, 1.0 mm in terms of volume). 3 ~2.5mm 3 In this way, since an addition reaction type adhesive, not a condensation reaction type, is used as the adhesive 46, gas is not generated during the curing reaction of the adhesive 46, and the adhesive 46 does not shrink. Therefore, the gap 42 can be reliably sealed airtight, and heat transfer can be promoted in the portion where the gap 42 is sealed with the adhesive 46. The adhesive 46 may be made of the same material as the bonding layer 40, or a different material.

[0035] In the electrostatic chuck 1 having the above configuration, in order to perform accurate temperature control on the holding surface 11, a plurality of heater electrodes 51, 52, 53 are provided on the plate-shaped member 10, and the heater electrodes 51, 52, 53 are arranged in each of the heating zones 61, 62, 63 that are divided into a plurality of zones. The bonding layer 40 is divided according to each of the heating zones 61, 62, 63, and circumferential gaps 41, 42 are provided between the divided bonding layers, and the gaps 41, 42 are arranged according to the boundaries of the heating zones 61, 62, 63. Therefore, when viewed in the Z-axis direction, the gaps 41, 42 are arranged so as to include the boundaries of the heating zones 61, 62, 63, and do not overlap any of the heater electrodes 51, 52, 53.

[0036] Therefore, the bonding layer 40 is divided along the boundaries of the heating zones 61, 62, and 63, and the plate-shaped member 10 and the bonding layer 40 do not contact each other at the divided portions of the bonding layer 40, i.e., the gaps 41 and 42. This deteriorates the heat transfer between the plate-shaped member 10 and the bonding layer 40 at the gaps 41 and 42 of the bonding layer 40, i.e., at the boundaries of the heating zones 61, 62, and 63. As a result, the temperature gradient increases at the boundaries of the heating zones 61, 62, and 63, causing a clear temperature difference, so that the temperature control in the heating zones 61, 62, and 63 can be performed with high accuracy, and the temperature controllability (resolution) on the holding surface 11 can be improved.

[0037] Here, in the plate-shaped member 10, the through-hole 25 of the base member 20, i.e., the periphery of the hole 45 of the bonding layer 40, is likely to become hot due to poor heat transfer from the base member 20. Therefore, in the electrostatic chuck 1, the gap 42 connected to the hole 45 in the bonding layer 40 is filled with an adhesive 46 near the hole 45 and blocked. This promotes heat transfer between the base member 20 and the plate-shaped member 10 via the adhesive 46, making it possible to suppress a temperature rise around the hole 45 of the bonding layer 40 (the through-hole 25 of the base member 20), and to reduce the effect on the temperature gradient at the boundary between the heating zones 62, 63.

[0038] In this embodiment, the through hole 25 of the base member 20 constitutes a part of a hole connected to the atmosphere, such as a terminal hole or a temperature sensor hole provided in the electrostatic chuck 1, but since the gap 42 connected to the hole 45 is blocked by the adhesive 46, it is possible to reliably block the connection to the atmosphere. Therefore, the gap 42 provided in the bonding layer 40 can be maintained airtight (vacuum).

[0039] In addition, because an addition reaction type adhesive is used as the adhesive 46, no gas is generated and no shrinkage occurs during the curing reaction of the adhesive 46. Therefore, the gap 42 connected to the hole 45 is reliably sealed airtight, and heat transfer can be further promoted in the portion where the gap 42 is sealed with the adhesive 46. This can further suppress the temperature rise around the hole 45 (the through hole 25 of the base member 20) of the bonding layer 40, thereby further reducing the effect on the temperature gradient at the boundary between the heating zones 62, 63.

[0040] Here, a modified example will be described with reference to Figs. 6 and 7. Fig. 6 shows a part of the plate-shaped member, and Fig. 7 shows a part of the bonding layer. In this modified example, in order to further improve the temperature controllability in the holding surface 11, the number of partitions of the heating zones is increased in the plate-shaped member 110 as shown in Fig. 6. That is, in the plate-shaped member 110, one annular heating zone is added from the above embodiment, and a circular heating zone 161 and annular heating zones 162, 163, and 164 are provided. Furthermore, the heating zone 162 is divided into a plurality of heating zones 162a, 162b, and the heating zone 163 is divided into a plurality of heating zones 163a, 163 ...b.

[0041] The bonding layer 140 is divided according to the heating zone 161, the heating zones 162a, 162b,..., the heating zones 163a, 163b,..., and the heating zone 164 in the plate-like member 110. That is, the bonding layer 140 has circumferential gaps 141, 142, 143 and linear gaps 144, 145 extending in the radial direction. The gaps 141, 142, 143, 144, 145 formed in the bonding layer 140 are arranged so as to include the boundaries of the heating zone 161, the heating zones 162a, 162b,..., the heating zones 163a, 163b,..., and the heating zone 164 when viewed in the Z-axis direction.

[0042] Specifically, when viewed in the Z-axis direction, the gap 141 is arranged so as to include the boundary between the heating zone 161 and the heating zone 162 (162a, 162b, ...). Moreover, the gap 142 is arranged so as to include the boundary between the heating zone 162 and the heating zone 163 (163a, 163b, ...). Moreover, the gap 143 is arranged so as to include the boundary between the heating zone 163 and the heating zone 164. Moreover, the gap 144 is arranged so as to include the boundary between the heating zone 162a and the heating zone 162b. Moreover, the gap 145 is arranged so as to include the boundary between the heating zone 163a and the heating zone 163b.

[0043] Gaps 142, 144, and 145 are connected to hole 45 of bonding layer 140, and these gaps 142, 144, and 145 are filled with adhesive 46 near hole 45 and closed.

[0044] In this modified example in which the heating zones are divided finely in the plate-shaped member 110, the bonding layer 140 is divided along the boundaries of the heating zones 161, 162a, 162b, . . . , 163a, 163b, . . . , 164 in the plate-shaped member 110, as in the above embodiment, and the plate-shaped member 110 and the bonding layer 140 do not contact each other in the gaps 141, 142, 143, 144, 145 which are the divided parts of the bonding layer 140. As a result, the heat transfer between the plate-shaped member 110 and the bonding layer 140 deteriorates in the gaps 141, 142, 143, 144, 145 of the bonding layer 140, that is, in the boundaries of the heating zones 161, 162a, 162b, . . . , 163a, 163b, . . . , 164. Therefore, at the boundaries between each heating zone 161, 162a, 162b, ..., 163a, 163b, ..., 164, the temperature gradient becomes larger and a clear temperature difference occurs, allowing temperature control in each heating zone 161, 162a, 162b, ..., 163a, 163b, ..., 164 to be performed with high precision, and further improving the temperature controllability (resolution) on the holding surface 11.

[0045] As described above, according to the electrostatic chuck 1 of the present embodiment, the circumferential gaps 41, 42 are provided in the bonding layer 40 so that the bonding layer 40 is divided along the boundaries of the heating zones 61, 62, 63. In the gaps 41, 42, the bonding layer 40 does not contact the plate-shaped member 10, and therefore the heat transfer between the plate-shaped member 10 and the bonding layer 40 deteriorates. As a result, the temperature gradient increases at the boundaries of the heating zones 61, 62, 63, and a clear temperature difference occurs, and therefore the temperature controllability (resolution) in the heating zones 61, 62, 63 is improved.

[0046] Furthermore, in the gap 42 connected to the hole 45 communicating with the through hole 25, the adhesive 46 is filled near the hole 45 to close the gap 42. Therefore, in the vicinity of the through hole 25 in the plate-like member 10 where the temperature is likely to become high, the adhesive 46 filled in the gap 42 promotes heat transfer between the base member 20 and the plate-like member 10, and it is possible to suppress a rise in temperature around the through hole 25. This also improves the temperature controllability (resolution) in the heating zones 61, 62, 63.

[0047] In addition, the divided bonding layer 40 is not limited to a form completely divided by gaps 41 and 42, but may be a form in which the bonding layer 40 is connected on the base member 20 (second member) side and has a gap on the plate-shaped member 10 (first member) side, that is, a form in which a groove is formed on the plate-shaped member 10 (first member) side of the bonding layer 40, and gaps 41 and 42 may be groove-shaped.

[0048] Furthermore, a material having a lower thermal conductivity than the bonding layer 40 may be disposed in the gaps 41 and 42 of the bonding layer 40. It is more preferable that the gaps 41 and 42 are filled with an air layer, since this provides a superior heat insulating effect and creates a large temperature gradient at the boundaries between the heating zones 61, 62, and 63, resulting in a clear temperature difference.

[0049] It should be noted that the above embodiment is merely an example and does not limit the present disclosure in any way, and various improvements and modifications are possible without departing from the spirit and scope of the present disclosure. For example, in the above embodiment, the heater electrodes 51, 52, and 53 are disposed inside the plate-shaped member 10, but the present disclosure can also be applied to the case where the heater electrodes 51, 52, and 53 are disposed on the lower surface 12 of the plate-shaped member 10. [Explanation of symbols]

[0050] 1. Electrostatic chuck 10 Plate-shaped member 11 Holding surface 12 Bottom side 20 Base material 21 Top side 22 Bottom side 25 Through hole 40 Bonding layer 41 Gap 42 Gap 45 holes 46 Adhesive 51 Heater electrode 52 Heater electrode 53 Heater electrode 61 Heating Zone 62 Heating Zone 63 Heating Zone

Claims

1. a first member including a first surface, a second surface provided on an opposite side of the first surface in a first direction, and a heating resistor disposed on a plane substantially perpendicular to the first direction between the first surface and the second surface or on the second surface; a second member including a third surface and a fourth surface provided on an opposite side of the third surface in the first direction; a bonding layer disposed between the second surface of the first member and the third surface of the second member, bonding the first member and the second member; A holding device for holding an object on the first surface of the first member, The heating resistors are arranged in each of a plurality of heating zones, The bonding layer includes a portion divided according to each of the heating zones, There is a gap between the divided bonding layers, When viewed from the first direction, the gap does not overlap with the heating resistor, The first member is made of a single unitary member. A holding device characterized in that

2. 2. The holding device according to claim 1, The second member has a through hole formed therein, the through hole penetrating the third surface and the fourth surface, a hole communicating with the through hole in the first direction is formed in the bonding layer; The gaps connected to the holes are filled with adhesive near the holes and closed. A holding device characterized in that

3. 3. The holding device according to claim 2, The adhesive is an addition reaction type adhesive. A holding device characterized in that

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