Vacuum adsorption device and adsorption method

Abstract

The invention discloses a vacuum adsorption device and an adsorption method, the device comprises a carrying table and a driving device, vacuum holes and sealing holes which are distributed in a staggered manner are formed in the surface of the carrying table, and a plurality of independently controlled vacuum areas are formed. Each area is provided with an independent vacuum pipeline, a pressure controller and a switch, and precise negative pressure regulation and control are achieved. The lifting sealing ring is arranged in the sealing hole, the height is adjusted through the driving device, and the position of the sealing ring and the warping state of the wafer are monitored in real time through the detection device. In the adsorption process, if warping exists, the height of the sealing ring is automatically adjusted, the wafer is flattened step by step in a subsection adsorption mode of subarea control, and global adsorption is started after the heights of all the sealing rings are consistent. According to the method, the problem that a traditional adsorption mode is poor in adaptability to large-warping wafers is effectively solved through the partition control and dynamic adjustment technology, the method has the advantages of being stable in adsorption, uniform in stress, low in breakage rate and the like, and the process compatibility and the production yield are remarkably improved.

Description

Technical Field

[0001] The present invention belongs to the field of wafer processing equipment and relates to a vacuum adsorption device and an adsorption method. Background Art

[0002] Vacuum adsorption is a technology widely used in fields such as semiconductor manufacturing. It mainly creates a negative pressure environment through a vacuum pump. The vacuum pump evacuates the gas from the adsorption area, thereby reducing the pressure in this area and forming a vacuum area between the wafer and the adsorption plate. The adsorption force generated by this vacuum area can firmly fix the wafer on the adsorption plate, providing stable support for subsequent processing steps. Generally, when the warpage of the wafer is within the specification range, the vacuum adsorption system can work normally, effectively adsorbing the wafer and supporting the subsequent operation process. However, when the warpage degree of the wafer is relatively large, the situation becomes complicated. Excessive warpage will lead to a reduction in the contact area between the wafer and the adsorption plate, making it difficult to form a vacuum area, resulting in insufficient adsorption force and unable to normally adsorb the wafer. This will not only affect the fixing effect of the wafer but may also cause problems such as displacement and damage of the wafer during the processing, thus seriously affecting the quality and efficiency of the subsequent manufacturing process.

[0003] Due to the special structure of the product and the complexity of the previous process, sometimes the warpage situation of the wafer cannot be completely controlled. In some product designs, the structure of the wafer may inherently have a certain tendency to warp. In addition, some process steps in the previous process, such as thin film deposition and etching, may affect the stress distribution of the wafer, thereby leading to the generation of warpage. In this case, even if some measures are taken to control warpage, it is difficult to completely avoid the occurrence of large warpage situations.

[0004] Therefore, in order to ensure the smooth progress of the entire manufacturing process, it is particularly important to solve the problem that large warpage wafers cannot be normally adsorbed during vacuum adsorption. Currently, it is necessary to provide a vacuum adsorption device that enables large warpage wafers to be normally adsorbed during vacuum adsorption.

[0005] It should be noted that the above introduction of the technical background is only for the convenience of clearly and completely explaining the technical solutions of the present application and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well-known to those skilled in the art merely because these solutions are described in the background art part of the present application. Summary of the Invention

[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a vacuum adsorption device to solve the problem that large warpage wafers cannot be normally adsorbed during vacuum adsorption.

[0007] To achieve the above object, the present invention provides a vacuum adsorption device, which includes:

[0008] A stage, the stage includes a stage surface and a plurality of vacuum holes and at least two sealing holes located on the stage surface. The vacuum holes and the sealing holes are staggered to form at least two independent vacuum areas, jointly covering the stage surface;

[0009] At least two vacuum pipes, the vacuum pipes are connected to the corresponding vacuum holes;

[0010] A sealing ring, the sealing ring is located in the sealing hole;

[0011] A driving device, the driving device is connected to the sealing ring and is used to control the lifting of the sealing ring.

[0012] Optionally, the arrangement mode of the sealing holes is one or a combination of circular arrangement, fan-shaped arrangement, matrix arrangement, and hexagonal arrangement.

[0013] Optionally, the vacuum pipes are connected to a vacuum pressure controller and a vacuum valve, and are used to control the vacuum pressure and state of different vacuum areas.

[0014] Optionally, the driving device includes a detection device, which is used to detect the lifting height of the sealing ring, and further obtain the warping position of the wafer.

[0015] Optionally, the driving device communicates with the vacuum area through a control system.

[0016] The present invention also proposes an adsorption method based on the above-mentioned vacuum adsorption device, including:

[0017] Placing the wafer on the stage and adsorbing the wafer;

[0018] Detecting the adsorption state of the wafer. If the detection is normal adsorption, perform a conventional adsorption operation; if the detection is abnormal adsorption, drive the sealing ring to rise to the corresponding position based on the wafer warping data, start segmented vacuum adsorption for the vacuum area corresponding to the warping position, and synchronously adjust the height of the sealing ring until all the sealing rings are flush.

[0019] Optionally, the abnormal adsorption treatment further includes: real-time monitoring of the vacuum pressure of the segmented vacuum adsorption; if the vacuum pressure exceeds the safety threshold, stop the adsorption operation and handle the abnormality; if the vacuum pressure does not exceed the safety threshold, perform a normal segmented vacuum adsorption operation.

[0020] Optionally, when synchronously adjusting the height of the sealing rings until all the sealing rings are flush, it further includes: real-time detecting whether the current heights of all the sealing rings are the same; if they are the same, starting synchronous adsorption in all the vacuum areas; controlling the sealing rings to synchronously descend to the surface of the carrier; if they are not the same, returning to perform re-adjusting the height of the sealing rings based on the latest warpage data; performing segmented vacuum adsorption on the non-flush areas again; repeating the synchronous adjustment and height detection steps until the heights of all the sealing rings are the same.

[0021] Optionally, detecting whether the wafer is abnormally adsorbed is achieved by detecting the adsorption force or vacuum pressure between the wafer and the carrier. If the adsorption force or vacuum pressure reaches a preset value, it is considered that the wafer is normally adsorbed; otherwise, it is considered that the wafer is abnormally adsorbed.

[0022] Optionally, the step of obtaining the wafer warpage data includes measuring with a detecting device, and the detecting device includes an optical measuring device or a mechanical contact measuring tool.

[0023] The present invention provides a vacuum adsorption device and an adsorption method. The device includes a carrier and a driving device. The surface of the carrier is provided with vacuum holes and sealing holes distributed alternately, forming a plurality of independent vacuum areas. Each area is connected to a vacuum pressure controller and a switch through an independent pipeline to achieve precise pressure control. A liftable sealing ring is arranged in the sealing hole, which is controlled by the driving device, and a detecting device is equipped to detect the height of the sealing ring and the warpage position of the wafer. When adsorbing, if the wafer cannot be normally adsorbed, the height of the sealing ring is adjusted according to the warpage degree, segmented vacuum adsorption is started, and the height of each sealing ring is detected until the heights are the same and then global adsorption is started. This method effectively solves the adsorption problem of large-warpage wafers through segmented adsorption with zone control and dynamically adjusting the height of the sealing ring, improving reliability and stability. It reduces stress concentration on the wafer and the risk of breakage; at the same time, it improves process compatibility. The present invention realizes flexible adaptive adsorption of large-warpage wafers, significantly improving the yield rate while ensuring adsorption stability. Description of the Drawings

[0024] Figure 1 It shows a schematic structural diagram of the vacuum adsorption device of the present invention.

[0025] Figure 2 It shows a top view schematic diagram of the vacuum adsorption device of the present invention with the sealing holes arranged in concentric closed rings.

[0026] Figure 3 It shows a schematic cross-sectional structure diagram of the vacuum adsorption device of the present invention adsorbing a large-warpage wafer (peripherally warped).

[0027] Figure 4 It shows for the vacuum adsorption device of the present invention Figure 3Schematic cross-sectional structure diagram when the height of the sealing ring is made consistent by segmented vacuum pumping in different cases.

[0028] Figure 5 Schematic cross-sectional structure diagram showing the vacuum adsorption device of the present invention adsorbing a highly warped wafer (central warping).

[0029] Figure 6 Shown for the vacuum adsorption device of the present invention Figure 5 Schematic cross-sectional structure diagram when the height of the sealing ring is made consistent by segmented vacuum pumping in different cases

[0030] Figure 7 Schematic structure diagram showing that the sealing holes of the vacuum adsorption device of the present invention are arranged in a ring.

[0031] Figure 8 Schematic structure diagram showing that the sealing holes of the vacuum adsorption device of the present invention are evenly spaced and divided into six equal parts.

[0032] Figure 9 Schematic structure diagram showing that the sealing holes of the vacuum adsorption device of the present invention are arranged horizontally and separated.

[0033] Figure 10 Schematic structure diagram showing that the sealing holes of the vacuum adsorption device of the present invention are arranged in a fan shape.

[0034] Figure 11 Schematic structure diagram showing the distribution of two sealing holes of the vacuum adsorption device of the present invention.

[0035] Figure 12 Shown for the vacuum adsorption device of the present invention in Figure 11 Top view structure diagram on the basis of

[0036] Figure 13 Schematic flow diagram showing the adsorption method of the present invention.

[0037] Figure 14 Schematic conditional flow diagram showing the adsorption method in the second embodiment of the present invention.

[0038] Explanation of reference numerals

[0039] 100 Carrier

[0040] 110 Sealing hole

[0041] 120 Vacuum hole

[0042] 200 Vacuum pipeline

[0043] 201 First vacuum pipeline

[0044] 202 Second vacuum pipeline

[0045] 211 First vacuum valve

[0046] 212 Second vacuum valve

[0047] 210 Vacuum valve

[0048] 300 Sealing ring

[0049] 301 First sealing ring

[0050] 302 Second sealing ring

[0051] 310 Driving device

[0052] 400 Vacuum area

[0053] 410 First vacuum area

[0054] 420 Second vacuum area

[0055] 430 Third vacuum area

[0056] 500 Wafer Detailed implementation mode

[0057] The following uses specific specific examples to illustrate the implementation modes of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0058] When detailing the embodiments of the present invention, for the convenience of description, the cross-sectional views showing the device structure will be enlarged locally in a non-general proportion, and the schematic diagrams are only examples, and they should not limit the scope of protection of the present invention here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0059] For the convenience of description, spatial relationship terms such as "under", "below", "lower than", "beneath", "above", "on", etc. may be used herein to describe the relationship between one element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to include other directions of the device in use or operation, in addition to the directions depicted in the drawings. Embodiments may include those in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact. Additionally, when a layer is referred to as being "between" two layers, it may be the only layer between the two layers, or there may be one or more intervening layers.

[0060] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present invention. Therefore, only the components related to the present invention are shown in the drawings, rather than being drawn according to the number, shape, and size of the components in actual implementation. The types, quantities, and proportions of the components in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0061] Embodiment 1

[0062] This embodiment provides a vacuum adsorption device. Please refer to Figure 1 , which shows a cross-sectional schematic diagram of the vacuum adsorption device. The following introduces the related vacuum adsorption device in conjunction with the specification drawings. The vacuum adsorption device includes:

[0063] A stage 100, at least two vacuum pipes 200, a sealing ring 300, and a driving device 310.

[0064] The stage 100 includes a stage surface (not labeled) and a plurality of vacuum holes 120 and at least two sealing holes 110 located on the stage surface. The vacuum holes 120 and the sealing holes 110 are staggered to form at least two independent vacuum regions 400, which jointly cover the stage surface;

[0065] The vacuum pipe 200 is connected to the corresponding vacuum hole 120;

[0066] The sealing ring 300 is located in the sealing hole 110;

[0067] The driving device 310 is connected to the sealing ring 300 and is used to control the lifting of the sealing ring 300.

[0068] Specifically, refer to Figure 2 . On the stage surface, the staggered distribution of the plurality of vacuum holes 120 and at least two sealing holes 110 not only ensures the uniformity of vacuum adsorption but also provides a basis for forming a plurality of independent vacuum regions 400. This zoning design enables the adsorption force to be flexibly adjusted according to the shape and warpage degree of the wafer 500, ensuring the uniformity and stability of vacuum adsorption. At the same time, the setting of the vacuum pipe 200 provides reliable power support for the adsorption process. Refer to Figure 3 and Figure 5 , Figure 3 which shows the wafer 500 in a state of peripheral warpage, Figure 5 which shows the wafer 500 in a state of central warpage. The driving device 310 controls the sealing ring 300 to enable it to adaptively adjust according to the unevenness of the wafer 500 surface; at the same time, by independently adjusting the adsorption force in different regions, the height of the sealing ring 300 during the adsorption process is controlled to be consistent. Refer to Figure 4 andFigure 6 , while maintaining the adsorption effect of the wafer 500, it significantly improves the adsorption stability and adaptability while increasing the adsorption efficiency.

[0069] In this embodiment, referring to Figure 1 and Figure 2 , the sealing holes 110 are arranged in a concentric closed circular ring. The vacuum regions 400 are respectively the first vacuum region 410, the second vacuum region 420, and the third vacuum region 430. Figure 2 The vacuum region 400 is actually located in the region between the wafer 500 and the stage 100, and here it represents the position on the surface of the stage in the top view structure. The vacuum pipelines 200 include a first vacuum pipeline 201, a second vacuum pipeline 202, and a third vacuum pipeline 203, and respectively correspond to the first vacuum region 410, the second vacuum region 420, and the third vacuum region 430. Each vacuum pipeline 200 corresponds to a single or multiple vacuum holes 120 within the vacuum region 400.

[0070] Furthermore, the sealing ring 300 is used to enhance the adsorption effect and sealing performance. The size and shape of the sealing holes 110 are perfectly matched with the sealing ring 300 to ensure that the sealing ring 300 can be stably installed in the sealing holes 110. When the sealing ring 300 is installed in the sealing holes 110, it can closely fit the surface of the stage and the edge of the wafer 500 to form a sealed adsorption area, preventing vacuum leakage, thereby improving the adsorption efficiency and stability. At the same time, the sealing ring 300 has dynamic sealing ability and wear resistance, and can maintain the sealing performance during the lifting process to ensure efficient adsorption performance during long-term operation.

[0071] Moreover, the driving device 310 is connected to the sealing ring 300 through an electric structure or other mechanical structures, and can accurately drive the sealing ring 300 to move up and down according to signals, which not only improves the operation efficiency and accuracy, but also provides the best adsorption force and sealing effect for the wafer 500 by precisely controlling the lifting of the sealing ring 300, thereby ensuring the smooth progress of the processing process and the stability of product quality.

[0072] As an example, the arrangement of the sealing holes 110 is one or a combination of circular arrangement, fan-shaped arrangement, matrix arrangement, and hexagonal arrangement.

[0073] Specifically, the arrangement of the sealing holes 110 has a high degree of flexibility and diversity; referring to Figure 7, the sealing holes 110 can be arranged in a circular pattern, i.e., distributed in the form of one or more concentric circles on the surface of the stage to form an annular structure. The circular arrangement can ensure that the sealing ring 300 evenly contacts and seals the surface of the stage during the lifting process; refer to Figures 8 - 10 , Figure 8 shows a case where the sealing holes 110 are equally spaced in six parts, and some of the sealing holes 110 surround the vacuum hole 120; Figure 9 shows a case where the sealing holes 110 are arranged in a horizontally divided manner, Figure 10 shows a case where the sealing holes 110 are arranged in a fan shape, and the sealing holes 110 radiate outward from the center point to form one or more fan-shaped regions. These arrangement methods can make the vacuum adsorption force more evenly distributed on the surface of the wafer, reduce the deformation or displacement of the wafer caused by uneven adsorption force, thereby improving the adsorption efficiency and stability. At the same time, local adsorption can also be selectively performed to achieve the flattening of the whole surface of the wafer. In its embodiment, the arrangement of the sealing holes 110 also includes matrix arrangement and hexagonal arrangement. The matrix arrangement is distributed in the form of rows and columns on the surface of the stage to form a regular rectangular or square grid. The hexagonal arrangement is distributed in a honeycomb structure, which can achieve efficient sealing in a limited space while maintaining the structural strength and stability. The above arrangement methods are used to meet different sealing requirements to achieve complex sealing requirements, which will not be elaborated here.

[0074] Furthermore, the arrangement method of the sealing holes 110 is not limited to a single arrangement form, but can also be any combination of the above arrangement methods. This combined arrangement method can further optimize the sealing performance and meet complex sealing requirements. In other embodiments, the arrangement of the sealing holes 110 is not limited to the above arrangement methods, which will not be elaborated here.

[0075] As an example, the vacuum pipeline 200 is connected to a vacuum pressure controller (not labeled) and a vacuum valve 210, and is used to control the vacuum pressure and state of different vacuum regions 400.

[0076] Specifically, while the vacuum pipeline 200 is connected to the vacuum hole 120, it is correspondingly connected to an independent vacuum pressure controller and an independent vacuum valve 210. Through the optimized layout of the vacuum pipeline 200, it is ensured that the vacuum adsorption force can be efficiently and stably transmitted to the bottom of the wafer 500, thereby realizing the firm adsorption of the wafer 500.

[0077] The vacuum pressure controller can automatically adjust the pumping speed of the vacuum pump and the opening and closing degree of the vacuum valve 210 according to a preset vacuum degree range, so as to maintain the required vacuum pressure. In this embodiment, the first vacuum pipeline 201, the second vacuum pipeline 202, and the third vacuum pipeline 203 are respectively connected to independent vacuum pumps. This design allows independent control of each vacuum area, so as to flexibly adjust the adsorption force according to the shape and warpage degree of the wafer 500, ensuring the uniformity and stability of vacuum adsorption. In other embodiments, the vacuum pipeline 200 can be connected to the same vacuum pump, and each vacuum pipeline 200 automatically adjusts the opening and closing degree of the vacuum valve 210 according to a preset vacuum degree range through the vacuum pressure controller, so as to maintain the required vacuum pressure.

[0078] Furthermore, through the built-in sensor and control logic, the vacuum pressure controller can monitor the vacuum degree in the vacuum pipeline 200 in real time, and automatically start or stop the vacuum pump or the vacuum valve 210 when the vacuum degree is lower or higher than the set value, ensuring the stable operation of the vacuum system, improving the reliability and efficiency of the system, and facilitating the improvement of the accuracy of vacuum control.

[0079] In other embodiments, the number of the vacuum areas 400 can also be two, four, or other quantities. The number of the sealing rings 300 can also be multiple. Correspondingly, the vacuum pipelines can also be connected to the same vacuum pump as described above, or can be respectively connected to their own vacuum pumps.

[0080] As an example, the driving device 310 includes a detecting device (not labeled) for detecting the lifting height of the sealing ring 300, and further obtaining the warpage data of the wafer 500.

[0081] Specifically, the driving device 310 is not only responsible for controlling the lifting action of the sealing ring 300 but also provided with a detecting device. The detecting device accurately detects the lifting height of the sealing ring 300, and obtains the position change of the sealing ring 300 in the vertical direction in real time, ensuring that the sealing ring 300 can accurately contact the surface of the wafer 500. This height detection ability is particularly important for processing wafers 500 with complex shapes or warpage, and helps the driving device 310 adjust the position of the sealing ring 300 according to the actual warpage degree of the wafer 500.

[0082] Further, the detection device can further obtain the warpage data of the wafer 500. When the sealing ring 300 moves up and down and contacts the surface of the wafer 500, the detection device can quickly identify the warped area of the wafer 500 by monitoring the force change or position deviation of the sealing ring 300, providing important data for subsequent process adjustment. By detecting the warpage position in advance, the up and down displacement of the sealing ring 300 can be further adjusted to keep the height of the sealing ring 300 consistent. Of course, in other embodiments, the warpage data of the wafer 500 can also be directly obtained by a dedicated measuring device, and the driving device 310 controls the up and down displacement of the sealing ring 300 based on the warpage data of the wafer 500.

[0083] As an example, the driving device 310 communicates with the vacuum area 400 through a control system (not labeled).

[0084] Specifically, through the control system, the driving device 310 is communicated with the vacuum area 400, realizing the intelligent management of the vacuum adsorption process. Thus, the driving device 310 can receive feedback information from the vacuum area 400 in real time, such as vacuum degree, pressure change, etc., and adjust the lifting height and speed of the sealing ring 300 according to this information. Through this dynamic adjustment, the driving device 310 can ensure that each vacuum area 400 always maintains the best vacuum pressure during the adsorption process, thereby improving the adsorption effect and stability. In addition, this communication function also allows the driving device 310 to perform data interaction with the control system, realizing remote monitoring and automatic operation, and further enhancing the intelligent level of the system.

[0085] Further, in the vacuum adsorption system, the communication function between the driving device 310 and the vacuum area 400 enables the driving device 310 to accurately adjust the position of the sealing ring 300 according to the real-time monitored vacuum degree data to adapt to the warpage degree of the wafer 500, ensuring stable adsorption of the wafer 500 during processing and reducing displacement and deformation. In addition, this communication function can realize the collaborative work between multiple vacuum areas 400, improving the adsorption efficiency and the stability of the wafer 500 adsorption. By connecting with an external control system, the operator can remotely monitor and adjust the working state of each vacuum area 400, realizing an intelligent production process, improving the flexibility and adaptability of the system, and providing technical support for the realization of complex processes.

[0086] Embodiment 2

[0087] Refer to Figure 13 , this embodiment proposes an adsorption method, which is an adsorption method based on the vacuum adsorption device of Embodiment 1 or its similar one.Figure 14 The conditional flowchart of the adsorption method of this embodiment is shown, and how to perform segmented vacuum adsorption and abnormal handling under different circumstances is described in detail through different conditional branches. The adsorption method of the vacuum adsorption device will be introduced below with reference to the accompanying drawings of the specification.

[0088] First, refer to Figure 13 and Figure 14 , and perform step S1: Place the wafer 500 on the stage 100 to adsorb the wafer. Specifically, the wafer 500 needs to be accurately placed on the stage 100 and firmly fixed by the vacuum adsorption device to ensure the smooth progress of subsequent processes (such as lithography, etching, etc.).

[0089] Next, refer to Figure 13 and Figure 14 , and perform step S2: Detect the adsorption state of the wafer 500. If the detection is normal adsorption, perform a conventional adsorption operation. If the detection is abnormal adsorption, drive the sealing ring to rise to the corresponding position based on the wafer warpage data, start segmented vacuum adsorption for the vacuum area corresponding to the warped position, and synchronously adjust the height of the sealing ring until all the sealing rings are flush.

[0090] Specifically, due to problems such as warpage (i.e., uneven surface) of the wafer 500, abnormal situations may occur during the adsorption process. If normal adsorption can be achieved, a conventional adsorption operation is performed; if normal adsorption cannot be achieved, the driving device 310 raises the sealing ring 300 to the corresponding position according to the warpage data.

[0091] As an example, detecting whether the wafer 500 can be normally adsorbed is achieved by detecting the adsorption force or vacuum pressure between the wafer 500 and the stage 100 during conventional adsorption. If the adsorption force or vacuum pressure reaches a preset value, it is considered that the wafer 500 can be normally adsorbed; otherwise, it is considered that the wafer 500 cannot be normally adsorbed.

[0092] Specifically, when the wafer 500 is placed on the stage 100, start the vacuum pump for global adsorption, and check whether the adsorption force or vacuum pressure reaches the preset standard. If the adsorption force or vacuum pressure reaches the preset value, it is considered that normal adsorption can be achieved, and the wafer 500 performs a conventional adsorption operation. If the wafer 500 cannot be normally adsorbed, the sealing ring 300 is raised to the corresponding position according to the measured warpage data of the wafer 500. Of course, in other embodiments, the wafer adsorption judgment method is not limited to this and will not be elaborated here.

[0093] As an example, the steps for obtaining the warpage data of the wafer 500 include measuring with a detection device (not labeled), and the detection device includes an optical measurement device or a mechanical contact measurement tool.

[0094] Specifically, the detection device (such as an optical measurement device or a mechanical contact measurement tool) provided by the driving device 310 can accurately detect the lifting height of the sealing ring 300, and obtain the position change of the sealing ring 300 in the vertical direction in real time, ensuring that the sealing ring 300 can accurately contact the surface of the wafer 500. This height detection ability helps the driving device 310 adjust the position of the sealing ring 300 according to the actual warpage degree of the wafer 500.

[0095] Furthermore, the detection device can further obtain the warpage data of the wafer 500. When the sealing ring 300 lifts and contacts the surface of the wafer 500, the detection device infers the warpage degree and warpage position of the surface of the wafer 500 by monitoring the force change or position deviation of the sealing ring 300, realizing rapid identification of the warped area of the wafer 500 and providing important data for subsequent process adjustment. By detecting the warpage position in advance, the up and down displacement of the sealing ring 300 can be further adjusted to keep the height of the sealing ring 300 consistent.

[0096] Of course, in other embodiments, the warpage data of the wafer 500 can also be directly obtained by a dedicated measurement device, and the driving device 310 controls the up and down displacement of the sealing ring 300 through the warpage data of the wafer 500.

[0097] As an example, when performing segmented vacuum adsorption on the vacuum area 400 corresponding to the warped position, it also includes real-time monitoring of the vacuum pressure during segmented vacuum adsorption; if the vacuum pressure exceeds the safety threshold, stop the adsorption operation and handle the abnormality; if the vacuum pressure does not exceed the safety threshold, perform normal segmented vacuum adsorption operation.

[0098] In this embodiment, refer to Figure 11 and Figure 12, the vacuum adsorption device includes a first vacuum area 410 (corresponding to the inner vacuum area of the carrier surface) and a second vacuum area 420 (corresponding to the outer vacuum area of the carrier surface). Since the inner vacuum area 410 corresponds to the first vacuum pipe 201, and the first vacuum pipe 201 corresponds to the first vacuum valve 211, the outer vacuum area 420 corresponds to the second vacuum pipe 202, and the second vacuum pipe 202 corresponds to the second vacuum valve 212. The first vacuum pipe 201 and the second vacuum pipe are respectively connected to their respective vacuum pumps. The first sealing ring 301 and the second sealing ring 302 are located in the sealing hole 110, and the shapes of the first sealing ring 301 and the second sealing ring 302 are completely closed. In this embodiment, the wafer 500 is peripherally warped, and the vacuum adsorption device vacuumizes the outer vacuum area 420 in sections. At this time, the first vacuum valve 211 is in a closed state, and the second vacuum valve 212 is in an open state. During the vacuum adsorption process, the peripheral vacuum area 420 gradually makes the periphery of the wafer 500 flush with the inner side of the wafer 500. At the same time, the height of the second sealing ring 302 corresponding to the peripheral vacuum area 420 gradually decreases. Since the vacuum system needs to maintain a certain pressure range to ensure the safe operation of the equipment during the segmented vacuum absorption process, a safety threshold is usually set for the vacuum pressure. Therefore, it is necessary to monitor in real time whether the vacuum pressure during segmented vacuuming exceeds the safety threshold. The vacuum pressure detection is usually performed by a vacuum pressure sensor, which is connected to the vacuum pressure controller. In other embodiments, the corresponding vacuum area can be selected for segmented vacuuming operation according to the specific warping condition of the wafer 500 to ensure that the adsorption process is safe and reliable.

[0099] It should be noted that if Figures 7 - 10 , the shape of each sealing ring 300 is not necessarily a completely closed ring. According to the actual situation, it can also be an alternating ring or other shape. In the subsequent vacuum adsorption process, since there is no complete separation between the different vacuum areas, the adsorption force of the area that was first vacuum adsorbed will extend to the area that was not vacuum adsorbed, but there is still a difference in adsorption force between the different vacuum areas 400. Therefore, the above design can also achieve the adsorption effect of the wafer on the surface of the carrier. Of course, in other embodiments, according to the actual situation, each vacuum area 400 is not completely isolated, but can be partially or completely connected, so as to expect that there is a difference in adsorption force between the different vacuum areas 400 to achieve the adsorption effect.

[0100] As an example, when the vacuum pressure exceeds a preset safety threshold, the vacuum adsorption device is provided with a trigger alarm mechanism to ensure the safety of the wafer and the equipment.

[0101] Specifically, during the entire adsorption process, the vacuum pressure sensor continuously monitors the vacuum pressure. Once it is found that the vacuum pressure exceeds the safety threshold, the vacuum adsorption device triggers an alarm mechanism. In some embodiments, the control system automatically adjusts the air extraction volume, suspends the adsorption operation when necessary, and simultaneously detects vacuum system leaks or adjusts the pressure of the vacuum pump to prevent irreversible damage to the wafer 500 caused by excessive vacuum pressure, such as cracking or deformation of the wafer 500, and to avoid damage to the equipment itself, such as vacuum pump overload or pipeline rupture. Of course, in other embodiments, the opening and closing of the vacuum valve 210 can also be adjusted in other ways to control the vacuum pressure. Through automated safety measures, the quality of the wafer 500 and the stable operation of the equipment can be effectively guaranteed, ensuring safety and reliability during the production process.

[0102] As an example, the warpage data obtained by the detection device is transmitted to the control system, and the control system controls the corresponding vacuum area 400 for vacuum adsorption according to the warpage data.

[0103] Specifically, the driving device 310 communicates with the vacuum area 400 through the control system. The detection device obtains the warpage degree and warpage position of the wafer 500, and transmits the real-time warpage data to the control system. The control system adjusts the vacuum pump according to the data, and first performs segmented adsorption on the vacuum area 400 corresponding to the warpage of the wafer 500. By adjusting the air pressure of different vacuum areas 400, while ensuring that the wafer 500 is subjected to an adsorption force, the driving device 310 can adjust the contact between the sealing ring 300 and the wafer 500 to avoid damaging the wafer 500.

[0104] As an example, when synchronously adjusting the height of all the sealing rings 300 to be flush, it also includes real-time monitoring whether the current heights of all the sealing rings 300 are the same; if they are the same, start synchronous adsorption of all the vacuum areas 400, and control the sealing rings 300 to synchronously descend to the surface of the stage; if they are not the same, return to execute re-adjusting the height of the sealing rings 300 based on the latest warpage data; perform segmented vacuum adsorption on the non-flush areas again, and repeat the synchronous adjustment and height detection steps until the heights of all the sealing rings 300 are the same.

[0105] Specifically, the detection device monitors the height of the sealing ring 300 in real time. When the heights of the sealing ring 300 monitored in real time are consistent, the control system controls the vacuum pump and the relevant vacuum valves 210 to simultaneously evacuate all the vacuum areas 400, causing the sealing ring 300 to synchronously descend, and the wafer 500 to descend to the surface of the stage, completing the adsorption operation. If the heights of the sealing ring 300 monitored in real time are inconsistent, it is fed back to the control system. The control system continues to perform segmented adsorption on the corresponding vacuum areas 400 according to the real-time warping condition of the wafer 500, adjusts the vacuum pump, and adjusts the air pressure in different vacuum areas 400 until the heights of the sealing ring 300 are consistent.

[0106] In this embodiment, since the wafer 500 is warped at the outer periphery, the second sealing ring 302 in the outer peripheral vacuum area 420 gradually descends under the action of segmented evacuation until its height is consistent with that of the first sealing ring 301, completing the adsorption. At this time, the surface of the wafer 500 is in the same horizontal state. Then, the first vacuum valve 211 is synchronously opened, and the inner vacuum area 410 and the outer peripheral vacuum area 420 are simultaneously evacuated and adsorbed, and the first sealing ring 301 and the second sealing ring 302 gradually descend until the wafer 500 descends to the surface of the stage.

[0107] Similarly, if the wafer 500 is warped inwardly, the first sealing ring 301 in the inner vacuum area 410 gradually descends under the action of segmented evacuation until its height is consistent with that of the second sealing ring 302, completing the adsorption. In other embodiments, if there are three or more vacuum areas 400, the adsorption operation will perform segmented evacuation in the order of decreasing warping degree until the heights between all the sealing rings 300 are consistent, and then start the global adsorption to complete the corresponding adsorption operation. Of course, in other embodiments, the synchronous adjustment of the sealing ring height by the vacuum adsorption device is not limited to this, and will not be elaborated here.

[0108] In summary, the present invention provides a vacuum adsorption device and method. The device includes a stage and a driving device. The surface of the stage is provided with vacuum holes and sealing holes distributed alternately, forming multiple independent vacuum areas. Each area is connected to a vacuum pressure controller and a switch through an independent pipeline to achieve precise pressure control. A liftable sealing ring is arranged in the sealing hole, which is controlled by the driving device, and a detection device is equipped to detect the height of the sealing ring and the warping position of the wafer. During adsorption, if the wafer is abnormally adsorbed, the height of the sealing ring is adjusted according to the warping degree, the vacuum adsorption is started segmentally, and the height of each sealing ring is detected until the heights are the same and then the global adsorption is started. By means of segmented adsorption with zone control and dynamic adjustment of the height of the sealing ring, the method effectively solves the problem of adsorbing wafers with large warpage, improves reliability and stability, reduces stress concentration on the wafers, and reduces the risk of breakage. At the same time, the control of independent vacuum areas can adapt to different warping degrees and improve process compatibility. The present invention realizes flexible and adaptive adsorption of wafers with large warpage, significantly improves the yield rate while ensuring adsorption stability. The present invention effectively overcomes various disadvantages in the prior art and has high industrial utilization value.

[0109] The above embodiments are only illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A vacuum adsorption device, characterized in that, The vacuum adsorption device includes: A stage, the stage includes a stage surface and a plurality of vacuum holes and at least two sealing holes located on the stage surface. The vacuum holes and the sealing holes are staggered to form at least two independent vacuum regions, which jointly cover the stage surface; At least two vacuum pipes, the vacuum pipes are connected to the corresponding vacuum holes; Sealing rings, the sealing rings are located in the sealing holes; A driving device, the driving device is connected to the sealing ring and is used to control the lifting of the sealing ring.

2. The vacuum adsorption device according to claim 1, characterized in that, The arrangement of the sealing holes is one or a combination of circular arrangement, fan-shaped arrangement, matrix arrangement, and hexagonal arrangement.

3. The vacuum adsorption device according to claim 1, wherein The vacuum pipes are connected to a vacuum pressure controller and a vacuum valve, and are used to control the vacuum pressure and state of different vacuum regions.

4. The vacuum adsorption device according to claim 1, characterized in that, The driving device includes a detection device, which is used to detect the lifting height of the sealing ring, and thus obtain the warpage data of the wafer.

5. The vacuum adsorption device according to claim 1, characterized in that, The driving device communicates with the vacuum region through a control system.

6. The adsorption method of the vacuum adsorption device according to any one of claims 1 to 5, characterized in that, The adsorption method includes the following steps: Place the wafer on the stage and adsorb the wafer; Detect the adsorption state of the wafer. If the detection shows normal adsorption, perform a conventional adsorption operation; if the detection shows abnormal adsorption, drive the sealing ring to rise to the corresponding position based on the wafer warpage data, start segmented vacuum adsorption for the vacuum region corresponding to the warped position, and synchronously adjust the height of the sealing ring until all the sealing rings are flush.

7. The adsorption method according to claim 6, wherein The abnormal adsorption treatment further includes: Real-time monitor the vacuum pressure of the segmented vacuum adsorption; if the vacuum pressure exceeds the safety threshold, stop the adsorption operation and handle the abnormality; if the vacuum pressure does not exceed the safety threshold, perform a normal segmented vacuum adsorption operation.

8. The adsorption method according to claim 6 or 7, characterized in that, When synchronously adjusting the height of the sealing ring until all the sealing rings are flush, it further includes: Real-time detect whether the current heights of all the sealing rings are the same; if they are the same, start synchronous adsorption of all the vacuum regions; control the sealing rings to synchronously descend to the stage surface; if they are not the same, return to perform re-adjusting the height of the sealing ring based on the latest warpage data; perform segmented vacuum adsorption on the non-flush region again; repeat the synchronous adjustment and height detection steps until the heights of all the sealing rings are the same.

9. The adsorption method according to claim 6 or 7, characterized in that, Detecting whether the wafer is abnormally adsorbed is achieved by detecting the adsorption force or vacuum pressure between the wafer and the stage. If the adsorption force or vacuum pressure reaches a preset value, the wafer is considered to be normally adsorbed; otherwise, the wafer is considered to be abnormally adsorbed.

10. The adsorption method according to claim 6 or 7, characterized in that, The step of obtaining the wafer warpage data includes measuring with a detection device, and the detection device includes an optical measurement device or a mechanical contact measurement tool.

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