Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Abstract

In the present invention, a silicon carbide epitaxial substrate has a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide epitaxial layer is on the silicon carbide substrate. The silicon carbide epitaxial layer includes a boundary surface that is in contact with the silicon carbide substrate, and a main surface on the reverse side from the boundary surface. The main surface has an outer peripheral edge, an outer peripheral region 5 mm or less from the outer peripheral edge, and a central region surrounded by the outer peripheral region. The first surface density is at least 5 times the second surface density, where the first surface density is the surface density of double Shockley stacking faults in the outer peripheral region, and the second surface density is the surface density of double Shockley stacking faults in the central region. The second surface density is 0.2 cm-2 or greater. The surface density of single Shockley stacking faults in the outer peripheral region is 0.5 cm-2 or less.

Description

[Technical field]

[0001] The present disclosure relates to a silicon carbide epitaxial substrate and a method for manufacturing a silicon carbide semiconductor device. This application claims priority to Japanese Patent Application No. 2020-012522, filed on January 29, 2020. The entire contents of the Japanese patent application are incorporated herein by reference. [Background technology]

[0002] In Japanese Patent Laid-Open No. 2018-162178 (Patent Document 1), a double Shockley type stacking fault is detected at 5 cm -2 A method for epitaxially growing silicon carbide is disclosed, which comprises the steps of: [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-162178 A Summary of the Invention

[0004] A silicon carbide epitaxial substrate according to the present disclosure includes a silicon carbide substrate and a silicon carbide epitaxial layer. The silicon carbide epitaxial layer is on the silicon carbide substrate. The silicon carbide epitaxial layer includes a boundary surface in contact with the silicon carbide substrate and a main surface opposite the boundary surface. The main surface has an outer periphery, an outer periphery region within 5 mm from the outer periphery, and a central region surrounded by the outer periphery region. When the areal density of double Shockley stacking faults in the outer periphery region is defined as a first areal density and the areal density of double Shockley stacking faults in the central region is defined as a second areal density, the first areal density is at least five times the second areal density. The second areal density is 0.2 cm -2 The surface density of single Shockley type stacking faults in the peripheral region is 0.5 cm -2 The following is the result. [Brief description of the drawings]

[0005] [Figure 1] FIG. 1 is a plan view illustrating a configuration of a silicon carbide epitaxial substrate according to this embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG. [Diagram 3] FIG. 3 is an enlarged schematic plan view showing the state in which the outer circumferential region is measured by the photoluminescence method. [Figure 4] FIG. 4 is an enlarged schematic plan view showing the state in which the central region is measured by the photoluminescence method. [Diagram 5] FIG. 5 is a schematic plan view showing the first main surface as observed. [Figure 6] FIG. 6 is a schematic diagram showing the shape of the first main surface when the bow has a negative value. [Figure 7] FIG. 7 is a schematic diagram showing the shape of the first main surface when the bow has a positive value. [Figure 8] FIG. 8 is a flowchart showing an outline of the method for manufacturing a silicon carbide epitaxial substrate in accordance with this embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view showing a first step of the method for manufacturing a silicon carbide epitaxial substrate in accordance with the present embodiment. [Figure 10] FIG. 10 is a schematic cross-sectional view showing the ion implantation step in the method for manufacturing a silicon carbide epitaxial substrate according to this embodiment. [Figure 11] FIG. 11 is a cross-sectional view illustrating the hydrogen treatment step in the method for manufacturing a silicon carbide epitaxial substrate according to the present embodiment. [Figure 12] FIG. 12 is a flowchart showing an outline of the method for manufacturing a silicon carbide semiconductor device according to this embodiment. [Figure 13] FIG. 13 is a schematic cross-sectional view showing an ion implantation step in the method for manufacturing a silicon carbide semiconductor device according to this embodiment. [Figure 14] FIG. 14 is a schematic cross-sectional view showing an oxide film forming step in the method for manufacturing a silicon carbide semiconductor device according to this embodiment. [Figure 15]FIG. 15 is a schematic cross-sectional view showing the configuration of a silicon carbide semiconductor device in accordance with this embodiment. [Figure 16] FIG. 16 is a diagram showing the change in bow before and after epitaxial growth. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0006] [Problem that this disclosure aims to solve] An object of the present disclosure is to provide a method for manufacturing a silicon carbide epitaxial substrate and a silicon carbide semiconductor device capable of improving reliability. [Effects of this disclosure] Advantageous Effects of Invention According to the present disclosure, it is possible to provide a silicon carbide epitaxial substrate and a method for manufacturing a silicon carbide semiconductor device capable of improving reliability.

[0007] [Overview of the embodiment of the present disclosure] First, an overview of the embodiments of the present disclosure will be described. In the crystallographic description in this specification, an individual orientation is represented by [], a collective orientation by <>, an individual plane by (), and a collective plane by {}. A negative index in crystallography is usually represented by placing a "-" (bar) above the number, but in this specification, a negative index in crystallography is represented by placing a negative sign before the number.

[0008] (1) A silicon carbide epitaxial substrate 100 according to the present disclosure includes a silicon carbide substrate 10 and a silicon carbide epitaxial layer 20. The silicon carbide epitaxial layer 20 is on the silicon carbide substrate 10. The silicon carbide epitaxial layer 20 includes an interface 11 in contact with the silicon carbide substrate 10 and a main surface 1 opposite to the interface 11. The main surface 1 has an outer periphery 5, an outer periphery region 31 within 5 mm from the outer periphery 5, and a central region 32 surrounded by the outer periphery region 31. When the areal density of the double Shockley type stacking faults 7 in the outer periphery region 31 is defined as a first areal density and the areal density of the double Shockley type stacking faults 7 in the central region 32 is defined as a second areal density, the first areal density is 5 times or more the second areal density. The second areal density is 0.2 cm -2The surface density of the single Shockley type stacking faults 8 in the peripheral region 31 is 0.5 cm -2 The following is the result.

[0009] (2) In silicon carbide epitaxial substrate 100 according to (1) above, bow, which quantitatively defines the amount of warping of main surface 1, may be a negative value.

[0010] (3) In the silicon carbide epitaxial substrate 100 according to (1) or (2) above, the second areal density is 1.0 cm -2 It may be the following.

[0011] (4) In the silicon carbide epitaxial substrate 100 according to any one of (1) to (3) above, the first areal density is 2.0 cm -2 It may be more than that.

[0012] (5) A method for manufacturing silicon carbide semiconductor device 300 according to the present disclosure includes the following steps: Silicon carbide epitaxial substrate 100 according to any one of (1) to (4) above is prepared. Silicon carbide epitaxial substrate 100 is processed.

[0013] [Details of the embodiment of the present disclosure] Hereinafter, the details of the embodiments of the present disclosure will be described. In the following description, the same or corresponding elements are denoted by the same reference numerals, and the same description thereof will not be repeated.

[0014] (Silicon carbide epitaxial substrate) FIG. 1 is a plan view schematic diagram showing the configuration of a silicon carbide epitaxial substrate according to this embodiment. FIG. 2 is a cross-sectional view schematic diagram taken along line II-II in FIG. 1. As shown in FIG. 1 and FIG. 2, a silicon carbide epitaxial substrate 100 according to this embodiment has a silicon carbide substrate 10 and a silicon carbide epitaxial layer 20. The silicon carbide epitaxial layer 20 is on the silicon carbide substrate 10. The silicon carbide epitaxial layer 20 is in contact with the silicon carbide substrate 10. The silicon carbide epitaxial layer 20 constitutes a surface (first main surface 1) of the silicon carbide epitaxial substrate 100. The silicon carbide substrate 10 constitutes a back surface (second main surface 12) of the silicon carbide epitaxial substrate 100.

[0015] The silicon carbide epitaxial layer 20 has a main surface (first main surface 1) and an interface 11. The interface 11 is on the opposite side to the first main surface 1. The interface 11 is in contact with the silicon carbide substrate 10. The first main surface 1 includes an outer peripheral edge 5, an outer peripheral region 31, and a central region 32. The outer peripheral region 31 is a region within 5 mm from the outer peripheral edge 5. As shown in FIG. 1 , when viewed in the thickness direction of the silicon carbide epitaxial layer 20, the outer peripheral region 31 is annular. The central region 32 is surrounded by the outer peripheral region 31. The central region 32 includes the center 6 of the first main surface 1. In this specification, the thickness direction of silicon carbide epitaxial layer 20 is the direction perpendicular to the flat surface when silicon carbide epitaxial substrate 100 is placed on the flat surface so that the back surface (second main surface 12) of silicon carbide epitaxial substrate 100 is in contact with the flat surface.

[0016] The outer peripheral edge 5 has, for example, an orientation flat 3 and an arc-shaped portion 4. The orientation flat 3 extends along a first direction 101. As shown in FIG. 1 , the orientation flat 3 is linear when viewed in the thickness direction of the silicon carbide epitaxial layer 20. The arc-shaped portion 4 is continuous with the orientation flat 3. The arc-shaped portion 4 is arc-shaped when viewed in the thickness direction of the silicon carbide epitaxial layer 20. The center 6 of the first main surface 1 is located at the center of a circle including the arc-shaped portion 4 when viewed in the thickness direction of the silicon carbide epitaxial layer 20.

[0017] 1, when viewed in the thickness direction of silicon carbide epitaxial layer 20, first main surface 1 extends along each of a first direction 101 and a second direction 102. When viewed in the thickness direction of silicon carbide epitaxial layer 20, first direction 101 is a direction perpendicular to second direction 102.

[0018] The first direction 101 is, for example, the <11-20> direction. The first direction 101 may be, for example, the [11-20] direction. The first direction 101 may be a direction obtained by projecting the <11-20> direction onto the first main surface 1. From another perspective, the first direction 101 may be, for example, a direction including a <11-20> directional component.

[0019] The second direction 102 is, for example, the <1-100> direction. The second direction 102 may be, for example, the [1-100] direction. The second direction 102 may be, for example, a direction obtained by projecting the <1-100> direction onto the first principal surface 1. From another perspective, the second direction 102 may be, for example, a direction including a <1-100> directional component.

[0020] The first main surface 1 may be a surface inclined with respect to the {0001} plane. When the first main surface 1 is inclined with respect to the {0001} plane, the inclination angle (off angle) with respect to the {0001} plane is, for example, 2° or more and 6° or less. When the first main surface 1 is inclined with respect to the {0001} plane, the inclination direction (off direction) of the first main surface 1 is, for example, the <11-20> direction.

[0021] As shown in FIG. 1, the maximum diameter W of the first main surface 1 is not particularly limited, but is, for example, 4 inches. The maximum diameter W may be 4 inches or more, or 6 inches or more. There is no particular upper limit to the maximum diameter W. The maximum diameter W may be, for example, 8 inches or less.

[0022] In this specification, 2 inches refers to 50 mm or 50.8 mm (25.4 mm / inch x 2 inches). 3 inches refers to 75 mm or 76.2 mm (25.4 mm / inch x 3 inches). 4 inches refers to 100 mm or 101.6 mm (25.4 mm / inch x 4 inches). 5 inches refers to 125 mm or 127.0 mm (25.4 mm / inch x 5 inches). 6 inches refers to 150 mm or 152.4 mm (25.4 mm / inch x 6 inches). 8 inches refers to 200 mm or 203.2 mm (25.4 mm / inch x 8 inches).

[0023] As shown in FIG. 2, silicon carbide substrate 10 has second main surface 12 and third main surface 13. Third main surface 13 is on the opposite side to second main surface 12. Second main surface 12 is the back surface of silicon carbide epitaxial substrate 100. Second main surface 12 is spaced apart from silicon carbide epitaxial layer 20. Third main surface 13 is in contact with silicon carbide epitaxial layer 20. The polytype of silicon carbide constituting silicon carbide substrate 10 is, for example, 4H. Similarly, the polytype of silicon carbide constituting silicon carbide epitaxial layer 20 is, for example, 4H.

[0024] Silicon carbide substrate 10 contains an n-type impurity such as nitrogen (N). The conductivity type of silicon carbide substrate 10 is, for example, n-type. Silicon carbide substrate 10 has a thickness of, for example, 350 μm or more and 500 μm or less. Silicon carbide epitaxial layer 20 contains an n-type impurity such as nitrogen. The conductivity type of silicon carbide epitaxial layer 20 is, for example, n-type. The concentration of the n-type impurity contained in silicon carbide epitaxial layer 20 may be lower than the concentration of the n-type impurity contained in silicon carbide substrate 10.

[0025] 3 is an enlarged schematic plan view showing the state where peripheral region 31 is measured by a photoluminescence method. As shown in FIG. 3, double Shockley stacking faults 7 are present in peripheral region 31 of silicon carbide epitaxial layer 20. The areal density of double Shockley stacking faults 7 in peripheral region 31 is a first areal density. The first areal density is, for example, 2.0 cm -2 Can be more than 4.0cm -2 The first areal density is a value obtained by dividing the total number of double Shockley type stacking faults 7 present in the outer circumferential region 31 by the area of ​​the outer circumferential region 31.

[0026] 3, the silicon carbide epitaxial layer 20 may or may not have single Shockley type stacking faults 8 in the peripheral region 31. The surface density (third surface density) of the single Shockley type stacking faults 8 in the peripheral region 31 is, for example, 0.5 cm -2 The third areal density is a value obtained by dividing the total number of single Shockley type stacking faults 8 present in the peripheral region 31 by the area of ​​the peripheral region 31.

[0027] 4 is an enlarged schematic plan view showing the state of central region 32 measured by a photoluminescence method. As shown in FIG. 4, double Shockley stacking faults 7 are present in central region 32 of silicon carbide epitaxial layer 20. The areal density of double Shockley stacking faults 7 in central region 32 is a second areal density. The second areal density is 0.2 cm -2 The second surface density is 0.4 cm -2 May be more than 0.6 cm -2 The second surface density may be, for example, 1.0 cm -2 Can be less than 0.8cm -2 The second areal density is a value obtained by dividing the total number of double Shockley type stacking faults 7 present in the central region 32 by the area of ​​the central region 32.

[0028] The first areal density is 5 times or more the second areal density. The first areal density may be 7 times or more, or 10 times or more, the second areal density. The central region 32 of the silicon carbide epitaxial layer 20 may or may not have single Shockley type stacking faults 8. The areal density (fourth areal density) of the single Shockley type stacking faults 8 in the central region 32 is 0.5 cm -2 The fourth surface density is, for example, 0.3 cm -2 May be less than 0.1 cm -2 or less. It is desirable that there are no single Shockley type stacking faults 8 in the central region 32. The fourth areal density is a value obtained by dividing the total number of single Shockley type stacking faults 8 present in the central region 32 by the area of ​​the central region 32.

[0029] (Method of measuring areal density of stacking faults) Next, a method for measuring the areal density of each of the single Shockley type stacking faults 8 and the double Shockley type stacking faults 7 will be described.

[0030] For observing the single Shockley type stacking fault 8 and the double Shockley type stacking fault 7, for example, a photoluminescence imaging device (model number: PLI-200) manufactured by Photon Design Co., Ltd. is used. When the measurement area of ​​the silicon carbide epitaxial substrate 100 is irradiated with excitation light, photoluminescence light is observed from the measurement area. For example, a mercury xenon lamp is used as the excitation light source. The excitation light from the light source passes through a bandpass filter (313 nm) on the irradiating side and is then irradiated onto the measurement area. This causes photoluminescence light to be emitted from the measurement area. The photoluminescence light passes through a bandpass filter on the receiving side and then reaches a light receiving element such as a camera. As described above, a photoluminescence image of the measurement area is captured.

[0031] The emission wavelength of the single Shockley stacking fault 8 is around 420 nm. On the other hand, the emission wavelength of the double Shockley stacking fault 7 is around 510 nm. Therefore, by changing the wavelength of the bandpass filter on the light receiving side, each stacking fault can be identified. Specifically, by setting the wavelength of the bandpass filter on the light receiving side to 420 nm, the single Shockley stacking fault 8 can be observed. By setting the wavelength of the bandpass filter on the light receiving side to 510 nm, the double Shockley stacking fault 7 can be observed. In the observed photoluminescence image, each of the single Shockley stacking fault 8 and the double Shockley stacking fault 7 emits light darker than the surrounding areas.

[0032] While moving silicon carbide epitaxial substrate 100 in a direction parallel to first main surface 1 of silicon carbide epitaxial layer 20, a photoluminescence image of the entire first main surface 1 is taken. The area of ​​one field of view of the photoluminescence image is, for example, 2.6 mm×2.6 mm. First main surface 1 is composed of peripheral region 31 and central region 32. In the acquired photoluminescence image, the number of each of single Shockley type stacking faults 8 and double Shockley type stacking faults 7 is identified.

[0033] (Warpage) Next, a method for measuring the amount of warpage of first main surface 1 of silicon carbide epitaxial substrate 100 will be described. The amount of warpage of first main surface 1 can be measured, for example, by a Flatmaster manufactured by Tropel. First, silicon carbide epitaxial substrate 100 is placed on a flat surface. With second main surface 12 placed on the flat surface, first main surface 1 opposite second main surface 12 is observed.

[0034] 5 is a schematic plan view showing the first main surface 1 as observed. As shown in FIG. 5, a three-point reference plane 94 of the first main surface 1 is determined. The three-point reference plane 94 is a virtual plane including three points (a fifth position 95, a sixth position 96, and a seventh position 97) on the boundary line between the central region 32 and the peripheral region 31. A triangle formed by connecting the fifth position 95, the sixth position 96, and the seventh position 97 is an equilateral triangle. As shown in FIG. 5, when viewed in the thickness direction of the silicon carbide epitaxial substrate 100, the center of the first main surface 1 coincides with the center of the equilateral triangle.

[0035] Indices for quantifying the amount of warping include bow and warp. FIG. 6 is a schematic diagram showing the shape of the first main surface 1 when bow is a negative value. FIG. 7 is a schematic diagram showing the shape of the first main surface 1 when bow is a positive value. As shown in FIG. 6 and FIG. 7, in a direction perpendicular to the three-point reference plane 94, the sum of the distance (first distance 154) between the highest position 92 of the first main surface 1 seen from the three-point reference plane 94 and the three-point reference plane 94, and the distance (second distance 155) between the lowest position 93 of the first main surface 1 seen from the three-point reference plane 94 and the three-point reference plane 94 is the warp. In a direction perpendicular to the three-point reference plane 94, the distance between the position 91 of the center 6 of the first main surface 1 and the three-point reference plane 94 is the bow.

[0036] As shown in Fig. 6, when the position 91 of the center 6 of the first main surface 1 is lower than the three-point reference plane 94, the bow has a negative value. As shown in Fig. 7, when the position 91 of the center 6 of the first main surface 1 is higher than the three-point reference plane 94, the bow has a positive value. In this specification, when the bow has a negative value (see Fig. 6), the first main surface 1 is considered to be concave. Conversely, when the bow has a positive value (see Fig. 7), the first main surface 1 is considered to be convex.

[0037] In silicon carbide epitaxial substrate 100 according to this embodiment, the bow of first main surface 1 is, for example, a negative value. The bow of first main surface 1 may be, for example, −20 μm or less, or −40 μm or less. The lower limit of the bow of first main surface 1 is not particularly limited, but may be, for example, −80 μm or more.

[0038] In silicon carbide epitaxial substrate 100 according to the present embodiment, warp of first main surface 1 is, for example, 60 μm or less. Warp of first main surface 1 may be, for example, 50 μm or less, or 40 μm or less. The lower limit of warp of first main surface 1 is not particularly limited, but may be, for example, 10 μm or more.

[0039] (Method for manufacturing silicon carbide epitaxial substrate) Next, a method for manufacturing silicon carbide epitaxial substrate 100 in accordance with this embodiment will be described.

[0040] Fig. 8 is a flow chart showing an outline of the method for manufacturing a silicon carbide epitaxial substrate according to this embodiment. As shown in Fig. 8, the method for manufacturing a silicon carbide epitaxial substrate 100 according to this embodiment mainly includes a silicon carbide substrate preparation step (S1), a silicon carbide substrate polishing step (S2), an ion implantation step (S3), a hydrogen treatment step (S4), and an epitaxial growth step (S5).

[0041] A silicon carbide substrate preparation step (S1) is performed. A silicon carbide single crystal of polytype 4H is manufactured, for example, by sublimation. Next, the silicon carbide single crystal is sliced, for example, by a wire saw, to prepare a silicon carbide substrate 10. The silicon carbide substrate 10 contains an n-type impurity, for example, nitrogen. The conductivity type of the silicon carbide substrate 10 is, for example, n-type.

[0042] As shown in Fig. 9, silicon carbide substrate 10 has third main surface 13 and second main surface 12 opposite third main surface 13. Third main surface 13 is a surface inclined in the off direction by an off angle with respect to the {0001} plane, for example. The off angle is, for example, not less than 2° and not more than 6°. The off direction is, for example, the <11-20> direction. Third main surface 13 of silicon carbide substrate 10 has a maximum diameter of, for example, 150 mm.

[0043] Next, a silicon carbide substrate polishing step (S2) is performed. Specifically, a mechanical polishing step is performed first. In the mechanical polishing step, mechanical polishing is performed on the third main surface 13 of the silicon carbide substrate 10. Specifically, the silicon carbide substrate 10 is held by a polishing head so that the third main surface 13 faces a surface plate. A slurry containing abrasive grains is supplied between the surface plate and the third main surface 13. The abrasive grains are, for example, diamond abrasive grains. The second main surface 12 is also mechanically polished in the same manner as the third main surface 13.

[0044] Next, a chemical mechanical polishing step is performed. In the chemical mechanical polishing step, chemical mechanical polishing is performed on the third main surface 13 of the silicon carbide substrate 10. Specifically, the silicon carbide substrate 10 is held by a polishing head so that the third main surface 13 of the silicon carbide substrate 10 faces a polishing cloth provided on a surface plate. The polishing cloth is, for example, Supreme manufactured by Nitta Haas. An abrasive is supplied between the polishing cloth and the third main surface 13. The abrasive is, for example, DSC-0902 manufactured by Fujimi Incorporated. The processing pressure (surface pressure) is, for example, 400 g / cm. 2 The rotation speed of the platen is, for example, 60 rpm. The rotation speed of the polishing head is, for example, 60 rpm. Second main surface 12 is also subjected to chemical mechanical polishing in the same manner as third main surface 13. By performing polishing on third main surface 13, basal plane dislocations (not shown) formed due to processing damage are generated in third main surface 13.

[0045] Next, an ion implantation step (S3) is performed. Specifically, two stages of ion implantation are performed on the entire surface of the third main surface 13. For the ion implantation, for example, a parallel ion implantation device (IMPHEAT) manufactured by Nissin Ion Equipment Co., Ltd. is used. The ion species is, for example, aluminum ions (Al + The temperature of the silicon carbide substrate 10 is, for example, room temperature. In the first ion implantation step, for example, the energy is 530 keV and the dose amount is 2.8×10 14 cm -2 In the second ion implantation step, for example, the energy is set to 280 keV and the dose is set to 2.0×1014 cm -2 It is said.

[0046] As shown in FIG. 10, ions are implanted into the third main surface 13 using the above conditions. The direction of the arrow shown in FIG. 10 is the ion implantation direction. As a result, the silicon carbide substrate 10 is curved in a concave shape. Specifically, when the silicon carbide substrate 10 is placed on a flat surface so that the second main surface 12 of the silicon carbide substrate 10 is in contact with the flat surface, the silicon carbide substrate 10 is curved so that the vicinity of the center of the second main surface 12 is in contact with the flat surface and the outer edge of the second main surface 12 is separated from the flat surface. The third main surface 13 is curved approximately along the shape of the second main surface 12. That is, the bow of the third main surface 13 is a negative value.

[0047] Next, a hydrogen treatment step (S4) is performed. In the hydrogen treatment step (S4), hydrogen treatment is performed on the third main surface 13 while the silicon carbide substrate 10 is heated. Specifically, the silicon carbide substrate 10 is placed in a chamber. Next, the temperature of the silicon carbide substrate 10 is increased to about 1630° C. Next, hydrogen gas is introduced into the chamber. The flow rate of the hydrogen gas is adjusted to be, for example, 100 slm. This causes the silicon carbide substrate 10 to be etched at the third main surface 13 (see FIG. 11). As a result, some of the basal plane dislocations formed at the third main surface 13 are removed. In addition, the bow of the third main surface 13 may change as the distortion of the silicon carbide substrate 10 is partially relaxed by the above etching, but in the silicon carbide substrate 10, the bow of the third main surface 13 remains negative even after the hydrogen treatment step.

[0048] Next, the epitaxial growth step (S5) is performed. In the epitaxial growth step (S5), the chamber is first heated to, for example, about 1630° C. Next, a mixed gas containing, for example, silane, propane, ammonia, and hydrogen is introduced into the chamber. Specifically, the flow rate of the silane gas is adjusted to, for example, 115 sccm. The flow rate of the propane gas is adjusted to, for example, 57.6 sccm. The flow rate of the ammonia gas is adjusted to, for example, 2.5×10 -2The flow rate of the hydrogen gas is adjusted to 100 sccm. By introducing the mixed gas into the chamber, silicon carbide epitaxial layer 20 is formed on third main surface 13 of silicon carbide substrate 10 by epitaxial growth.

[0049] In the epitaxial growth step (S5), the silicon carbide substrate 10 reaches a high temperature of about 1600°C. If the silicon carbide substrate 10 is curved in a convex shape at high temperatures, stress is concentrated from the outer periphery of the third main surface 13 toward the center. From another perspective, the stress is high near the center of the third main surface 13, and low near the outer periphery of the third main surface 13. On the other hand, as shown in FIG. 10, if the silicon carbide substrate 10 is curved in a concave shape at high temperatures, stress is released from the center of the third main surface 13 toward the outer periphery. From another perspective, the stress is low near the center of the third main surface 13, and high near the outer periphery of the third main surface 13. In the region where the stress is high, double Shockley stacking faults 7 are likely to occur in the silicon carbide epitaxial layer 20.

[0050] In the method for manufacturing the silicon carbide epitaxial substrate 100 according to this embodiment, epitaxial growth is performed in a state where the bow of the third main surface 13 of the silicon carbide substrate 10 is a negative value. Specifically, in the silicon carbide substrate 10 after the ion implantation step (S3) and before the hydrogen treatment step (S4), epitaxial growth is performed in a state where the bow of the third main surface 13 is, for example, −20 μm or less. The bow of the third main surface 13 may be, for example, −40 μm or less, or −60 μm or less. This results in a low stress near the center of the third main surface 13 and a high stress near the periphery of the third main surface 13. As a result, a large number of double Shockley type stacking faults 7 are generated near the periphery where the stress is high. In this manner, the silicon carbide epitaxial substrate 100 according to this embodiment is manufactured (see FIG. 2).

[0051] (Method for manufacturing silicon carbide semiconductor device) Next, a method for manufacturing the silicon carbide semiconductor device 300 according to this embodiment will be described.

[0052] Fig. 12 is a flowchart showing an outline of the method for manufacturing a silicon carbide semiconductor device according to this embodiment. As shown in Fig. 12, the method for manufacturing a silicon carbide semiconductor device according to this embodiment mainly includes an epitaxial substrate preparation step (S10: Fig. 12) and a substrate processing step (S20: Fig. 12).

[0053] First, an epitaxial substrate preparation step (S10: FIG. 12) is performed. Specifically, silicon carbide epitaxial substrate 100 is prepared by the method for manufacturing silicon carbide epitaxial substrate 100 described above (see FIG. 2).

[0054] Next, a substrate processing step (S20: FIG. 12) is performed. Specifically, silicon carbide epitaxial substrate 100 is processed to manufacture a silicon carbide semiconductor device. "Processing" includes various types of processing, such as ion implantation, heat treatment, etching, oxide film formation, electrode formation, dicing, etc. In other words, the substrate processing step may include at least any one of ion implantation, heat treatment, etching, oxide film formation, electrode formation, and dicing.

[0055] In the following, a method for manufacturing a metal oxide semiconductor field effect transistor (MOSFET) as an example of a silicon carbide semiconductor device will be described. The substrate processing step (S20: FIG. 12) includes, for example, an ion implantation step (S21: FIG. 12), an oxide film formation step (S22: FIG. 12), an electrode formation step (S23: FIG. 12), and a dicing step (S24: FIG. 12).

[0056] First, an ion implantation step (S21: FIG. 12) is performed. A p-type impurity such as aluminum (Al) is implanted into the first main surface 1 on which a mask (not shown) having openings is formed. This forms a body region 132 having a p-type conductivity. Next, an n-type impurity such as phosphorus (P) is implanted into a predetermined position in the body region 132. This forms a source region 133 having an n-type conductivity. Next, a p-type impurity such as aluminum is implanted into a predetermined position in the source region 133. This forms a contact region 134 having a p-type conductivity (see FIG. 13).

[0057] In silicon carbide epitaxial layer 20, a portion other than body region 132, source region 133, and contact region 134 becomes drift region 131. Source region 133 is separated from drift region 131 by body region 132. Ion implantation may be performed by heating silicon carbide epitaxial substrate 100 to about 300° C. or more and 600° C. or less. After ion implantation, activation annealing is performed on silicon carbide epitaxial substrate 100. The activation annealing activates the impurities implanted in silicon carbide epitaxial layer 20, and carriers are generated in each region. The atmosphere for activation annealing is, for example, an argon (Ar) atmosphere. The temperature for activation annealing is, for example, about 1800° C. The time for activation annealing is, for example, about 30 minutes.

[0058] Next, an oxide film forming step (S22: FIG. 12) is performed. For example, silicon carbide epitaxial substrate 100 is heated in an atmosphere containing oxygen, thereby forming oxide film 136 on first main surface 1 (see FIG. 14). Oxide film 136 is made of, for example, silicon dioxide or the like. Oxide film 136 functions as a gate insulating film. The temperature of the thermal oxidation treatment is, for example, about 1300° C. The time of the thermal oxidation treatment is, for example, about 30 minutes.

[0059] After the oxide film 136 is formed, a heat treatment may be further performed in a nitrogen atmosphere. For example, the heat treatment is performed in a nitric oxide atmosphere at about 1100° C. for about one hour. After that, the heat treatment is further performed in an argon atmosphere. For example, the heat treatment is performed in an argon atmosphere at about 1100° C. or more and 1500° C. or less for about one hour.

[0060] Next, an electrode formation step (S23: FIG. 12) is performed. Specifically, the gate electrode 141 is formed on the oxide film 136. The gate electrode 141 is formed, for example, by a CVD (Chemical Vapor Deposition) method. The gate electrode 141 is made of, for example, conductive polysilicon. The gate electrode 141 is formed at a position facing the source region 133 and the body region 132.

[0061] Next, an interlayer insulating film 137 is formed to cover the gate electrode 141. The interlayer insulating film 137 is formed by, for example, a CVD method. The interlayer insulating film 137 is made of, for example, silicon dioxide or the like. The interlayer insulating film 137 is formed so as to be in contact with the gate electrode 141 and the oxide film 136. Next, a part of the oxide film 136 and the interlayer insulating film 137 are removed by etching. As a result, the source region 133 and the contact region 134 are exposed from the oxide film 136.

[0062] Next, a source electrode 142 is formed on the exposed portion by, for example, a sputtering method. The source electrode 142 is made of, for example, titanium, aluminum, silicon, or the like. After the source electrode 142 is formed, the source electrode 142 and the silicon carbide epitaxial substrate 100 are heated, for example, at a temperature of about 900° C. or more and 1100° C. or less. This allows the source electrode 142 and the silicon carbide epitaxial substrate 100 to make ohmic contact. Next, a wiring layer 138 is formed so as to contact the source electrode 142. The wiring layer 138 is made of, for example, a material containing aluminum. Next, a drain electrode 143 is formed on the second main surface 12. The drain electrode 143 is made of, for example, an alloy containing nickel and silicon (for example, NiSi, etc.).

[0063] Next, a dicing step (S24: FIG. 12) is performed. For example, silicon carbide epitaxial substrate 100 is diced along dicing lines, thereby dividing silicon carbide epitaxial substrate 100 into a plurality of semiconductor chips. In this manner, silicon carbide semiconductor device 300 is manufactured (see FIG. 15).

[0064] Although the method for manufacturing a silicon carbide semiconductor device according to the present disclosure has been described above by taking a planar MOSFET as an example, the method for manufacturing the silicon carbide semiconductor device according to the present disclosure is not limited thereto. The method for manufacturing the silicon carbide semiconductor device according to the present disclosure is applicable to silicon carbide semiconductor devices such as trench MOSFETs, IGBTs (Insulated Gate Bipolar Transistors), SBDs (Schottky Barrier Diodes), thyristors, GTOs (Gate Turn Off thyristors), and PN diodes.

[0065] Next, the effects of the method for manufacturing silicon carbide epitaxial substrate 100 and silicon carbide semiconductor device 300 in accordance with this embodiment will be described.

[0066] For example, in silicon carbide of polytype 4H, a basal plane perfect dislocation is decomposed into two basal plane partial dislocations. A stacking fault that exists between two basal plane partial dislocations is called a Shockley stacking fault. Shockley stacking faults are classified into four types of stacking faults based on the difference in stacking structure. Specifically, Shockley stacking faults are classified into single Shockley stacking faults, double Shockley stacking faults, triple Shockley stacking faults, and quadruple Shockley stacking faults. Each of the four types of stacking faults has a different emission wavelength. Therefore, these stacking faults can be identified by using the photoluminescence method.

[0067] When the surface density of the single Shockley type stacking faults 8 is high, current leakage is likely to occur in the silicon carbide semiconductor device, resulting in a significant deterioration in reliability. On the other hand, it is desirable to reduce the double Shockley type stacking faults 7 in consideration of the long-term reliability of the silicon carbide semiconductor device, but the effect of the double Shockley type stacking faults 7 on reliability degradation is not as great as that of the single Shockley type stacking faults 8. Therefore, even if a certain amount of double Shockley type stacking faults 7 remain in the silicon carbide epitaxial substrate 100, the effect of the double Shockley type stacking faults 7 on reliability degradation is not so significant.

[0068] As a result of intensive research, the inventors have come up with the idea of ​​reducing the single Shockley type stacking faults 8 by actively increasing the double Shockley type stacking faults 7. When the silicon carbide substrate 10 is curved in a convex shape at high temperatures, stress is concentrated from the periphery to the center of the main surface (upper surface). From another perspective, the stress is high near the center of the main surface and low near the periphery of the main surface. On the other hand, as shown in FIG. 10, when the silicon carbide substrate 10 is curved in a concave shape at high temperatures, stress is released from the center to the periphery of the main surface. From another perspective, the stress is low near the center of the main surface and high near the periphery of the main surface. In the region where the stress is high, the double Shockley type stacking faults 7 are likely to occur in the silicon carbide epitaxial layer 20. Furthermore, if a region of normal polytype 4H is converted to the double Shockley type stacking faults 7, the region is not converted to the single Shockley type stacking faults 8.

[0069] Specifically, the silicon carbide epitaxial layer 20 is formed on the silicon carbide substrate 10 in a state where the silicon carbide substrate 10 is curved in a concave shape to some extent at high temperature, so that the stress in the peripheral region 31 of the main surface 1 of the silicon carbide epitaxial layer 20 is made higher than the stress in the central region 32 of the main surface 1. As a result, the double Shockley stacking faults 7 are actively formed in the peripheral region 31. More specifically, when the surface density of the double Shockley stacking faults 7 in the peripheral region 31 is defined as a first surface density and the surface density of the double Shockley stacking faults 7 in the central region 32 is defined as a second surface density, the first surface density is set to be 5 times or more the second surface density. As a result, the probability of the formation of single Shockley stacking faults 8 in the peripheral region 31 can be reduced. Specifically, the surface density of the single Shockley stacking faults 8 in the peripheral region 31 is set to 0.5 cm -2 The following is the result.

[0070] In addition, in the silicon carbide epitaxial substrate 100 according to this embodiment, the areal density (second areal density) of the double Shockley type stacking faults 7 in the central region 32 is 0.2 cm -2 That is all. By actively increasing the double Shockley type stacking faults 7 also in the central region 32, the probability of the single Shockley type stacking faults 8 being formed in the central region 32 can be reduced. EXAMPLES

[0071] (Sample preparation) Next, an example will be described. According to the manufacturing method of the silicon carbide epitaxial substrate 100 described above, first, two silicon carbide substrates 10 having different bow values ​​of the third main surface 13 were prepared. The bow value of the third main surface 13 of sample 1 was −63.1 μm. The bow value of the third main surface 13 of sample 2 was +15.9 μm. The bow value is a value after the ion implantation step (S3) and before the hydrogen treatment step (S4). Next, the hydrogen treatment step (S4) was performed on the third main surface 13 of the silicon carbide substrate 10. Next, a silicon carbide epitaxial layer 20 was formed on the third main surface 13 by epitaxial growth. The third main surface 13 was a Si (silicon) surface. That is, the silicon carbide epitaxial layer 20 was grown on the Si surface. In this manner, silicon carbide epitaxial substrates 100 according to Sample 1 and Sample 2 were manufactured.

[0072] (Experimental Method) Next, the areal density (first areal density) of the double Shockley type stacking faults 7 in the peripheral region 31 of the first main surface 1 of the silicon carbide epitaxial substrate 100 was measured. Similarly, the areal density (second areal density) of the double Shockley type stacking faults 7 in the central region 32 was measured. Similarly, the areal density (third areal density) of the single Shockley type stacking faults 8 in the peripheral region 31 was measured. The method for measuring the stacking faults is as described above.

[0073] (Experimental Results) [Table 1]

[0074] Table 1 shows the results of the first areal density, second areal density, first areal density / second areal density, and third areal density in the silicon carbide epitaxial substrate 100 of each of Sample 1 and Sample 2. As shown in Table 1, it was confirmed that the areal density (third areal density) of single Shockley type stacking faults can be significantly reduced in the silicon carbide epitaxial substrate 100 of Sample 1, compared with the silicon carbide epitaxial substrate 100 of Sample 2. The experimental values ​​were a first areal density of 2.2 cm -2, second surface density 0.3cm -2 , 1st surface density / 2nd surface density 7.3, 3rd surface density 0.3cm -2 However, the first surface density is 1.0 cm -2 , second surface density 0.2cm -2 , 1st surface density / 2nd surface density 5.0, 3rd surface density 0.5cm -2 The effects of the invention are achieved even with values ​​of this. EXAMPLES

[0075] Next, the change in bow before and after epitaxial growth will be described. First, a plurality of silicon carbide substrates 10 with different bow values ​​on the third main surface 13 were prepared. The bow value was a value after the ion implantation step (S3) and before the hydrogen treatment step (S4). Next, the hydrogen treatment step (S4) was performed on the third main surface 13 of the silicon carbide substrate 10. Next, a silicon carbide epitaxial layer 20 was formed by epitaxial growth on the third main surface 13 of the silicon carbide substrate 10. The thickness of the silicon carbide epitaxial layer 20 was set to 10 μm. Next, the bow of the first main surface 1 of the silicon carbide epitaxial layer 20 was measured.

[0076] FIG. 16 is a diagram showing changes in bow before and after epitaxial growth. The horizontal axis of FIG. 16 is the bow of the third main surface 13 of the silicon carbide substrate 10 before epitaxial growth (before hydrogen treatment). The vertical axis of FIG. 16 is the bow of the first main surface 1 of the silicon carbide epitaxial layer 20 after epitaxial growth. The bow of the third main surface 13 before epitaxial growth is, for example, in the range of more than −80 μm and less than 40 μm. The bow of the first main surface 1 after epitaxial growth is, for example, in the range of more than −50 μm and less than 50 μm. As shown in FIG. 16, it was confirmed that the bow of the first main surface 1 after epitaxial growth was 15.6 μm larger than the bow of the third main surface 13 before epitaxial growth.

[0077] The embodiments and examples disclosed herein are illustrative in all respects and should not be considered as limiting. The scope of the present invention is defined by the claims, not by the embodiments and examples described above, and is intended to include the meaning equivalent to the claims and all modifications within the scope. [Explanation of symbols]

[0078] 1 principal surface (first principal surface), 3 orientation flat, 4 arc-shaped portion, 5 outer periphery, 6 center, 7 double Shockley stacking fault, 8 single Shockley stacking fault, 10 silicon carbide substrate, 11 boundary surface, 12 second principal surface, 13 third principal surface, 20 silicon carbide epitaxial layer, 31 outer periphery region, 32 central region, 91 position, 92 highest position, 93 lowest position, 94 point reference plane, 95 fifth position, 96 sixth position, 97 seventh position, 100 silicon carbide epitaxial substrate, 101 first direction, 102 second direction, 131 drift region, 132 body region, 133 source region, 134 contact region, 136 oxide film, 137 interlayer insulating film, 138 wiring layer, 141 gate electrode, 142 source electrode, 143 Drain electrode, 154 first distance, 155 second distance, 300 silicon carbide semiconductor device, W maximum diameter.

Claims

1. a silicon carbide substrate; a silicon carbide epitaxial layer on the silicon carbide substrate; the silicon carbide epitaxial layer includes an interface in contact with the silicon carbide substrate and a main surface opposite to the interface; The main surface has an outer circumferential edge, an outer circumferential region within 5 mm from the outer circumferential edge, and a central region surrounded by the outer circumferential region, an areal density of double Shockley type stacking faults in the outer circumferential region is a first areal density, and an areal density of double Shockley type stacking faults in the central region is a second areal density, the first areal density is 5 times or more as large as the second areal density, The surface density of single Shockley type stacking faults in the peripheral region is 0.5 cm －２ The silicon carbide epitaxial substrate is as follows:

2. 2. The silicon carbide epitaxial substrate according to claim 1, wherein a bow that quantitatively defines an amount of warping of the main surface is a negative value.

3. The silicon carbide epitaxial substrate according to claim 1, wherein the second areal density is 0.2 particles cm −2 or more.

4. The second areal density is 1.0 cm －２ 4. The silicon carbide epitaxial substrate according to claim 1, wherein:

5. The first areal density is 2.0 cm －２ The silicon carbide epitaxial substrate according to claim 1 .

6. A step of preparing a silicon carbide epitaxial substrate according to any one of claims 1 to 5; and processing the silicon carbide epitaxial substrate.

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