Semiconductor laser element
JP7645653B2Active Publication Date: 2025-03-14FURUKAWA ELECTRIC CO LTD
Patent Information
- Application Number
- JP2021019681
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-02-10
- Publication Date
- 2025-03-14
- Estimated Expiration
- 2041-02-10
AI Technical Summary
Benefits of technology
【0014】 本発明によれば、出力特性が安定したDFB構造の半導体レーザ素子を実現できるという効果を奏する。
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Abstract
To provide a semiconductor laser element having a DFB structure and stable output characteristics.SOLUTION: A semiconductor laser element comprises: a first clad layer having a first conductivity type; a second clad layer having a second conductivity type; and an active layer interposed between the first clad layer and the second clad layer. The second clad layer includes: at least one electric field control layer; and a diffraction grating layer in which a low refractive index unit that is arranged between the electric field control layer and the active layer and a high refractive index unit having a higher refractive index than the low refractive index unit are periodically arranged along an extending direction of the active layer. The refractive index of the electric field control layer and that of the diffraction grating layer are higher than that of a region other than the electric field control layer and the diffraction grating layer in the second clad layer.SELECTED DRAWING: Figure 1
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Citation Information
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