Semiconductor laser element and light-emitting device

By providing an electron barrier layer and a second cladding layer in the second semiconductor layer of the semiconductor laser element, the partitioning and downward trend of the Mg doping concentration are controlled, and the optical absorption problem caused by Mg doping diffusion is solved, and the luminescence efficiency and device reliability are improved.

CN119674710APending Publication Date: 2025-03-21QUANZHOU SANAN SEMICON TECH CO LTD
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Patent Information

Application Number
CN202411820034.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-11
Publication Date
2025-03-21

AI Technical Summary

Technical Problem

In the high temperature and high current density, the diffusion of Mg doping results in optical absorption phenomena and device performance degradation, affecting reliability.

Method used

A semiconductor laser element is designed, and the Mg doping concentration in the second semiconductor layer is arranged by an electron barrier layer and a second cladding layer to form a plurality of doping concentration partitions, controlling the diffusion depth of Mg and the downward trend of doping concentration to reduce optical absorption and improve hole injection efficiency.

Benefits of technology

By controlling the downward trend of Mg doping concentration, the hole injection efficiency in the quantum well layer is improved, the luminescence efficiency is enhanced, and the absorption of light is reduced, and the light output effect and reliability of the device are improved.

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Abstract

The invention provides a semiconductor laser element and a light-emitting device. An electron blocking layer is arranged between a second coating layer and a second waveguide layer of the semiconductor laser element; the second semiconductor layer is doped with a P-type dopant, the P-type dopant in the electron blocking layer has at least one doping concentration peak, the doping concentration of Mg at the doping concentration peak is smaller than the maximum doping concentration of the P-type dopant in the second semiconductor layer, and the P-type dopant in the electron blocking layer gradually approaches the direction of the electron blocking layer. The doping concentration of the P-type dopant in the second coating layer is provided with a plurality of subareas, and the doping concentration curve of the P-type dopant is gradually reduced along the plurality of subareas. Due to the descending trend of the Mg doping concentration in the second semiconductor layer, it can be guaranteed that the second semiconductor layer can provide enough holes, the hole injection efficiency in the quantum well layer is improved, and the light emitting efficiency is improved. Meanwhile, due to the arrangement of the second semiconductor layer, light absorption can be reduced, and the light emitting effect of the device is improved.
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