NOVEL COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME

Abstract

The present invention provides a novel compound and an organic light-emitting device including the compound.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of priority based on Korean Patent Application No. 10-2021-0122662 dated September 14, 2021, and all contents disclosed in the documents of that Korean patent application are incorporated herein by reference.

[0002] The present invention relates to a novel compound and an organic light-emitting device containing the same. [Background technology]

[0003] In general, organic light emitting phenomenon refers to a phenomenon in which electrical energy is converted into light energy using organic materials. Organic light emitting devices utilizing the organic light emitting phenomenon have a wide viewing angle, excellent contrast, fast response time, and excellent characteristics in luminance, driving voltage, and response speed, and are the subject of much research.

[0004] An organic light-emitting device generally has a structure including an anode, a cathode, and an organic layer between the anode and the cathode. The organic layer is often a multi-layer structure composed of different materials to improve the efficiency and stability of the organic light-emitting device, for example, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, etc. When a voltage is applied between two electrodes in such an organic light-emitting device structure, holes are injected from the anode and electrons are injected from the cathode into the organic layer. When the injected holes and electrons meet, excitons are formed, and when the excitons fall back to the ground state, light is emitted.

[0005] There is a continuous demand for the development of new organic materials for use in such organic light-emitting devices.

[0006] Meanwhile, in recent years, organic light-emitting devices have been developed that use solution processes, especially inkjet processes, instead of the existing deposition processes to reduce process costs. In the early days, attempts were made to develop organic light-emitting devices by coating all the layers of the organic light-emitting device using solution processes, but current technology has limitations, so research is being conducted on a hybrid process in which only HIL, HTL, and EML are performed using solution processes, and the remaining processes utilize existing deposition processes.

[0007] Therefore, the present invention provides a novel material for organic light emitting devices that can be used in organic light emitting devices and is solution processable. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Korean Patent Publication No. 10-2000-0051826 Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention relates to a novel compound and an organic light-emitting device containing the same. [Means for solving the problem]

[0010] The present invention provides a compound represented by the following formula: [ka] In the above-mentioned Chemical Formula 1, Ar1 is a benzene or benzothiophene fused to an adjacent ring; Ar2 is a benzene ring fused to two adjacent rings, R1 and R2 are each independently hydrogen, deuterium, or substituted or unsubstituted C 1-60 Alkyl, or substituted or unsubstituted C 6-60 aryl, or adjacent two R1 or R2 are bonded to each other to form a substituted or unsubstituted C 3-10Forming a cycloalkyl, R3 is a substituted or unsubstituted C 1-60 Alkyl, substituted or unsubstituted C 3-60 Cycloalkyl, or substituted or unsubstituted C 6-60 It is an aryl or a substituent represented by any one of the following formulas 2 to 4: [ka] In the above-mentioned Chemical Formula 2, Each R4 is independently hydrogen, deuterium, or two adjacent R4 are bonded to each other to form a substituted or unsubstituted C 3-10 Alkylene, or substituted or unsubstituted C 6-60 Forms an aromatic ring, [ka] In the above formula 3, each R5 is independently hydrogen, deuterium, or a substituted or unsubstituted C 1-60 is alkyl, [ka] In the above Chemical Formula 4, R6 is hydrogen, deuterium, substituted or unsubstituted C 1-60 C containing one or more heteroatoms selected from the group consisting of alkyl, substituted or unsubstituted N, O and S 2-60 is heteroaryl, n1 is an integer from 1 to 4, n2 is an integer from 0 to 5, n3 and n4 each independently represent an integer of 3 to 8.

[0011] The present invention also provides an organic light-emitting device comprising: a first electrode; a second electrode provided opposite the first electrode; and one or more organic layers provided between the first electrode and the second electrode, wherein at least one of the organic layers contains a compound represented by Chemical Formula 1. Effect of the Invention

[0012] The compound represented by Chemical Formula 1 above can be used as a material for the organic layer of an organic light-emitting device, and can be used in solution processing, and can improve the efficiency, low driving voltage, and / or life characteristics of the organic light-emitting device. [Brief description of the drawings]

[0013] [Figure 1] FIG. 1 is a diagram showing an example of an organic light-emitting device composed of a substrate 1, an anode 2, a light-emitting layer 3, and a cathode 4. [Diagram 2] FIG. 1 shows an example of an organic light-emitting device consisting of a substrate 1, an anode 2, a hole injection layer 5, a hole transport layer 6, a light-emitting layer 7, an electron injection and transport layer 8, and a cathode 4. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] The present invention will now be described in more detail for easier understanding.

[0015] (Definition of terms) In this specification, [ka] denotes a bond that is connected to another substituent.

[0016] In the present specification, the term "substituted or unsubstituted" means that the group is substituted or unsubstituted with one or more substituents selected from the group consisting of deuterium, halogen group, nitrile group, nitro group, hydroxy group, carbonyl group, ester group, imide group, amino group, phosphine oxide group, alkoxy group, aryloxy group, alkylthiooxy group, arylthiooxy group, alkylsulfoxy group, arylsulfoxy group, silyl group, boron group, alkyl group, cycloalkyl group, alkenyl group, aryl group, aralkyl group, aralkenyl group, alkylaryl group, alkylamine group, aralkylamine group, heteroarylamine group, arylamine group, arylphosphine group, or heterocyclic group containing one or more of N, O and S atoms, or that the group is substituted or unsubstituted with two or more of the above-mentioned exemplified substituents connected to each other. For example, the "substituent having two or more substituents connected to each other" may be a biphenyl group. In other words, the biphenyl group may be an aryl group, and may be interpreted as a substituent having two phenyl groups connected to each other.

[0017] In this specification, the number of carbon atoms in the carbonyl group is not particularly limited, but it is preferable that the carbon number is 1 to 40. Specifically, the carbonyl group may have a compound having the following structure, but is not limited thereto. [ka]

[0018] In this specification, the oxygen of the ester group may be substituted with a linear, branched or cyclic alkyl group having 1 to 25 carbon atoms, or an aryl group having 6 to 25 carbon atoms. Specifically, the ester group may be a compound having the following structural formula, but is not limited thereto. [ka]

[0019] In this specification, the number of carbon atoms of the imido group is not particularly limited, but is preferably 1 to 25. Specifically, the imido group may have a compound having the following structure, but is not limited thereto. [ka]

[0020] In this specification, specific examples of the silyl group include a trimethylsilyl group, a triethylsilyl group, a t-butyldimethylsilyl group, a vinyldimethylsilyl group, a propyldimethylsilyl group, a triphenylsilyl group, a diphenylsilyl group, and a phenylsilyl group, but are not limited to these.

[0021] In this specification, specific examples of the boron group include, but are not limited to, a trimethyl boron group, a triethyl boron group, a t-butyl dimethyl boron group, a triphenyl boron group, and a phenyl boron group.

[0022] In this specification, examples of halogen groups include fluorine, chlorine, bromine or iodine.

[0023] In this specification, the alkyl group may be linear or branched, and the number of carbon atoms is not particularly limited, but is preferably 1 to 40. According to one embodiment, the number of carbon atoms of the alkyl group is 1 to 20. According to another embodiment, the number of carbon atoms of the alkyl group is 1 to 10. According to another embodiment, the number of carbon atoms of the alkyl group is 1 to 6. Exemplary alkyl groups include, but are not limited to, methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, pentyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, heptyl, n-heptyl, 1-methylhexyl, cyclopentylmethyl, cyclohexylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2,2-dimethylheptyl, 1-ethyl-propyl, 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl, and the like.

[0024] In this specification, the alkenyl group may be linear or branched, and the number of carbon atoms is not particularly limited, but is preferably 2 to 40. According to one embodiment, the number of carbon atoms of the alkenyl group is 2 to 20. According to another embodiment, the number of carbon atoms of the alkenyl group is 2 to 10. According to another embodiment, the number of carbon atoms of the alkenyl group is 2 to 6. Specific examples include, but are not limited to, vinyl, 1-propenyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 3-methyl-1-butenyl, 1,3-butadienyl, allyl, 1-phenylvinyl-1-yl, 2-phenylvinyl-1-yl, 2,2-diphenylvinyl-1-yl, 2-phenyl-2-(naphthyl-1-yl)vinyl-1-yl, 2,2-bis(diphenyl-1-yl)vinyl-1-yl, a stilbenyl group, and a styrenyl group.

[0025] In the present specification, the cycloalkyl group is not particularly limited, but preferably has 3 to 60 carbon atoms, and according to one embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another embodiment, the cycloalkyl group has 3 to 20 carbon atoms. According to another embodiment, the cycloalkyl group has 3 to 6 carbon atoms. Specific examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, 3-methylcyclopentyl, 2,3-dimethylcyclopentyl, cyclohexyl, 3-methylcyclohexyl, 4-methylcyclohexyl, 2,3-dimethylcyclohexyl, 3,4,5-trimethylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, and cyclooctyl.

[0026] In the present specification, the aryl group is not particularly limited, but preferably has 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to one embodiment, the aryl group has 6 to 30 carbon atoms. According to one embodiment, the aryl group has 6 to 20 carbon atoms. The aryl group may be a monocyclic aryl group, such as a phenyl group, a biphenyl group, or a terphenyl group, but is not limited thereto. The polycyclic aryl group may be a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, a perylenyl group, a chrysenyl group, or a fluorenyl group, but is not limited thereto.

[0027] In this specification, the fluorenyl group may be substituted, and two of the substituents may be bonded to each other to form a spiro structure. When the fluorenyl group is substituted, [ka] However, the present invention is not limited to these.

[0028] In this specification, the heterocyclic group is a heterocyclic group containing one or more of O, N, Si and S as a hetero element, and the number of carbon atoms is not particularly limited, but preferably has 2 to 60 carbon atoms. Examples of heterocyclic groups include, but are not limited to, thiophene, furan, pyrrole, imidazole, thiazole, oxazole, oxadiazole, triazole, pyridyl, bipyridyl, pyrimidyl, triazine, acridyl, pyridazine, pyrazinyl, quinolinyl, quinazoline, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, pyrazinopyrazinyl, isoquinoline, indole, carbazole, benzoxazole, benzimidazole, benzothiazole, benzocarbazole, benzothiophene, dibenzothiophene, benzofuranyl, phenanthroline, isoxazolyl, thiadiazolyl, phenothiazinyl, and dibenzofuranyl groups.

[0029] In this specification, the aryl group in the aralkyl group, the aralkenyl group, the alkylaryl group, and the arylamine group are as exemplified above for the aryl group. In this specification, the alkyl group in the aralkyl group, the alkylaryl group, and the alkylamine group are as exemplified above for the alkyl group. In this specification, the heteroaryl in the heteroarylamine can be applied to the heterocyclic group described above. In this specification, the alkenyl group in the aralkenyl group is as exemplified above for the alkenyl group. In this specification, the aryl group described above can be applied to the arylene, except that it is a divalent group. In this specification, the heterocyclic group described above can be applied to the heteroarylene, except that it is a divalent group. In this specification, the hydrocarbon ring is not a monovalent group, but is formed by bonding two substituents, but is the same as the aryl group or cycloalkyl group described above. In this specification, the heterocyclic ring is not a monovalent group, but is formed by bonding two substituents, but is the same as the heterocyclic group described above.

[0030] (compound) The present invention provides a compound represented by Chemical Formula 1 above.

[0031] Preferably, the formula 1 is represented by the following formula 1-1 or formula 1-2: [ka] In the above-mentioned Chemical Formula 1-1 and Chemical Formula 1-2, Ar2, R1, R2, R3, n1, n2, n3, and n4 are as defined in claim 1.

[0032] Preferably, the formula 1 is any one selected from the group consisting of the formula 1-3 to formula 1-5 below: [ka] [ka] In the above-mentioned chemical formulas 1-3 to 1-5, Ar1, Ar2, R1, R2, R3, n1, and n2 are as defined in claim 1.

[0033] Preferably, R1 is hydrogen, deuterium, or tert-butyl, or two adjacent R1 are bonded to each other to form a substituted or unsubstituted C 5-10 Forms a cycloalkyl.

[0034] Preferably, R1 is hydrogen, deuterium, or tert-butyl, or two adjacent R1 are bonded to each other to form a substituent represented by any one of the following: [ka]

[0035] Preferably, R2 is hydrogen, deuterium, tert-butyl, phenyl, or phenyl substituted with tert-butyl, or two adjacent R2 are bonded to each other to form a substituted or unsubstituted C 5-10Forms a cycloalkyl.

[0036] Preferably, R2 is hydrogen, deuterium, tert-butyl, phenyl, or phenyl substituted with tert-butyl, or two adjacent R2 are bonded together to form a substituent represented by any one of the following: [ka]

[0037] Preferably, R3 is methyl, isopropyl, tert-butyl, cyclohexyl, phenyl, adamantyl, or any one of the following substituents: [ka]

[0038] Representative examples of the compound represented by Chemical Formula 1 are as follows:

[0039] [ka]

[0040] [ka]

[0041] [ka]

[0042] [ka]

[0043] [ka]

[0044] [ka]

[0045] Meanwhile, the present invention provides a method for preparing the compound represented by Chemical Formula 1, as shown in the following reaction scheme 1: [ka]

[0046] In the above reaction scheme 1, the remaining definitions except for X are as defined above, and X is a halogen, preferably bromo or chloro.

[0047] The step 1 is an amine substitution reaction, which is preferably carried out in the presence of a palladium catalyst and a base catalyst, and the reactive group for the amine substitution reaction can be changed according to those known in the art. The step 2 is a reaction with BI3, which is preferably carried out in the presence of a base. The preparation method will be more specifically described in the preparation examples described below.

[0048] Meanwhile, the organic layer including the compound according to the present invention may be formed using various methods such as vacuum deposition and solution processing, and the solution processing will be described in detail below.

[0049] (Coating Composition) Meanwhile, the compound according to the present invention can form an organic layer, particularly an emitting layer, of an organic light-emitting device by solution processing. Specifically, the compound can be used as a dopant material for the emitting layer. To this end, the present invention provides a coating composition comprising the compound according to the present invention and a solvent.

[0050] The solvent is not particularly limited as long as it is a solvent capable of dissolving or dispersing the compound according to the present invention, and examples thereof include chlorine-based solvents such as chloroform, methylene chloride, 1,2-dichloroethane, 1,1,2-trichloroethane, chlorobenzene, and o-dichlorobenzene; ether-based solvents such as tetrahydrofuran and dioxane; aromatic hydrocarbon-based solvents such as toluene, xylene, trimethylbenzene, and mesitylene; aliphatic hydrocarbon-based solvents such as cyclohexane, methylcyclohexane, n-pentane, n-hexane, n-heptane, n-octane, n-nonane, and n-decane; ketone-based solvents such as acetone, methyl ethyl ketone, and cyclohexanone; ester-based solvents such as ethyl acetate, butyl acetate, and ethyl cellosolve acetate; and ethylene Examples of the solvents include polyhydric alcohols and derivatives thereof, such as glycol, ethylene glycol monobutyl ether, ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, dimethoxyethane, propylene glycol, diethoxymethane, triethylene glycol monoethyl ether, glycerin, and 1,2-hexanediol; alcohol-based solvents, such as methanol, ethanol, propanol, isopropanol, and cyclohexanol; sulfoxide-based solvents, such as dimethyl sulfoxide; and amide-based solvents, such as N-methyl-2-pyrrolidone and N,N-dimethylformamide; benzoate-based solvents, such as butyl benzoate and methyl-2-methoxybenzoate; tetralin; and 3-phenoxytoluene. The above-mentioned solvents may be used alone or in combination of two or more. Preferably, toluene may be used as the solvent.

[0051] The coating composition may further include a compound used as a host material, which will be described later. The coating composition may further include a compound used as a dopant material, which will be described later.

[0052] The viscosity of the coating composition is preferably 1 cP or more. In consideration of the ease of coating of the coating composition, the viscosity of the coating composition is preferably 10 cP or less. The concentration of the compound according to the present invention in the coating composition is preferably 0.1 wt / v% or more. In order to ensure optimal coating of the coating composition, the concentration of the compound according to the present invention in the coating composition is preferably 20 wt / v% or less.

[0053] The present invention also provides a method for forming an emitting layer using the above-mentioned coating composition, which comprises the steps of coating the above-mentioned emitting layer according to the present invention on an anode or on a hole transport layer formed on an anode by a solution process; and heat-treating the coated coating composition.

[0054] The solution process uses the coating composition according to the present invention as described above, and includes, but is not limited to, spin coating, dip coating, doctor blading, inkjet printing, screen printing, spraying, roll coating, and the like.

[0055] In the heat treatment step, the heat treatment temperature is preferably 150 to 230° C. The heat treatment time is preferably 1 minute to 3 hours, more preferably 10 minutes to 1 hour. Furthermore, the heat treatment is preferably performed in an inert gas atmosphere such as argon or nitrogen.

[0056] (Organic light-emitting device) The present invention also provides an organic light-emitting device comprising the compound represented by Chemical Formula 1. As an example, the present invention provides an organic light-emitting device comprising a first electrode, a second electrode provided opposite to the first electrode, and a light-emitting layer provided between the first electrode and the second electrode, wherein the light-emitting layer comprises the compound represented by Chemical Formula 1.

[0057] The organic layer of the organic light-emitting device of the present invention may have a single-layer structure, or may have a multi-layer structure in which two or more organic layers are laminated. For example, the organic light-emitting device of the present invention may have a structure including a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, etc. as the organic layer. However, the structure of the organic light-emitting device is not limited thereto, and may include a smaller number of organic layers.

[0058] Furthermore, the organic layer may include a light-emitting layer, and the light-emitting layer includes the compound represented by Chemical Formula 1. In particular, the compound according to the present invention may be used as a dopant in the light-emitting layer.

[0059] Furthermore, the organic light emitting device according to the present invention may be an organic light emitting device having a structure (normal type) in which an anode, one or more organic layers, and a cathode are sequentially stacked on a substrate. Also, the organic light emitting device according to the present invention may be an organic light emitting device having a structure (inverted type) in which a cathode, one or more organic layers, and an anode are sequentially stacked on a substrate. For example, the structure of an organic light emitting device according to an embodiment of the present invention is illustrated in Figures 1 and 2.

[0060] 1 is a diagram showing an example of an organic light-emitting device consisting of a substrate 1, an anode 2, a light-emitting layer 3, and a cathode 4. In this structure, the compound represented by Chemical Formula 1 is contained in the light-emitting layer.

[0061] 2 is a diagram showing an example of an organic light-emitting device consisting of a substrate 1, an anode 2, a hole injection layer 5, a hole transport layer 6, an emitting layer 7, an electron injection and transport layer 8, and a cathode 4. In this structure, the compound represented by Chemical formula 1 is contained in the emitting layer.

[0062] The organic light emitting device according to the present invention is manufactured using materials and methods known in the art, except that at least one of the organic layers contains the compound represented by Chemical Formula 1. In addition, when the organic light emitting device includes a plurality of organic layers, the organic layers may be formed of the same material or different materials.

[0063] For example, the organic light emitting device according to the present invention may be manufactured by sequentially stacking an anode, an organic layer, and a cathode on a substrate. In this case, a metal, a conductive metal oxide, or an alloy thereof may be deposited on a substrate using a physical vapor deposition (PVD) method such as sputtering or e-beam evaporation to form an anode, and organic layers including a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer may be formed thereon, and a material usable as a cathode may be deposited thereon.

[0064] In addition to the above method, an organic light emitting device can be manufactured by sequentially depositing a cathode material, an organic layer, and an anode material on a substrate (WO 2003 / 012890), but the manufacturing method is not limited thereto.

[0065] As an example, the first electrode is an anode and the second electrode is a cathode, or the first electrode is a cathode and the second electrode is an anode.

[0066] The anode material is preferably a material with a large work function so that holes can be easily injected into the organic layer.Specific examples of the anode material include, but are not limited to, metals such as vanadium, chromium, copper, zinc, and gold, or alloys thereof; metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); combinations of metals and oxides such as ZnO:Al or SnO2:Sb; and conductive compounds such as poly(3-methylthiophene), poly[3,4-(ethylene-1,2-dioxy)thiophene] (PEDOT), polypyrrole, and polyaniline.

[0067] The cathode material is preferably a material having a small work function so that electrons can be easily injected into the organic layer. Specific examples of the cathode material include, but are not limited to, metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, and lead, or alloys thereof; and materials having a multilayer structure such as LiF / Al or LiO2 / Al.

[0068] The hole injection layer is a layer that injects holes from the electrode, and the hole injection material is preferably a compound that has the ability to transport holes, has a hole injection effect from the anode, has an excellent hole injection effect on the light emitting layer or light emitting material, prevents the movement of excitons generated in the light emitting layer to the electron injection layer or electron injection material, and has excellent thin film forming ability. The HOMO (highest occupied molecular orbital) of the hole injection material is preferably between the work function of the anode material and the HOMO of the surrounding organic layer. Specific examples of the hole injection material include metal porphyrin, oligothiophene, arylamine-based organic materials, hexanitrile hexaazatriphenylene-based organic materials, quinacridone-based organic materials, perylene-based organic materials, anthraquinone, and polyaniline and polythiophene-based conductive compounds, but are not limited thereto.

[0069] The hole transport layer is a layer that receives holes from the hole injection layer and transports them to the light emitting layer, and the hole transport material is a material that can transport holes from the anode or the hole injection layer to the light emitting layer and has high mobility for holes.Specific examples include, but are not limited to, arylamine-based organic compounds, conductive compounds, and block copolymers having both conjugated and non-conjugated portions.

[0070] The light-emitting layer may include a host material and a dopant material. The host material may be a fused aromatic ring derivative or a heterocyclic ring-containing compound. Specifically, the fused aromatic ring derivative may be an anthracene derivative, a pyrene derivative, a naphthalene derivative, a pentacene derivative, a phenanthrene compound, a fluoranthene compound, etc., and the heterocyclic ring-containing compound may be, but is not limited to, a carbazole derivative, a dibenzofuran derivative, a ladder-type furan compound, a pyrimidine derivative, etc.

[0071] The dopant materials include aromatic amine derivatives, styrylamine compounds, boron complexes, fluoranthene compounds, metal complexes, etc. Specifically, the aromatic amine derivatives are condensed aromatic ring derivatives having a substituted or unsubstituted arylamino group, such as pyrene, anthracene, chrysene, and periflanthene having an arylamino group, and the styrylamine compounds are compounds in which at least one arylvinyl group is substituted on a substituted or unsubstituted arylamine, and one or more substituents selected from the group consisting of an aryl group, a silyl group, an alkyl group, a cycloalkyl group, and an arylamino group are substituted or unsubstituted. Specifically, the dopant materials include, but are not limited to, styrylamine, styryldiamine, styryltriamine, and styryltetraamine. In addition, the metal complexes include, but are not limited to, iridium complexes and platinum complexes.

[0072] The electron injection and transport layer is a layer that simultaneously functions as an electron transport layer that injects electrons from the electrode and transports the received electrons to the light-emitting layer, and is formed on the light-emitting layer or the electron control layer. As such an electron injection and transport material, a material that can easily inject electrons from the cathode and transfer them to the light-emitting layer and has high mobility with respect to electrons is preferable. Specific examples of the electron injection and transport material include, but are not limited to, an 8-hydroxyquinoline Al complex; a complex containing Alq3; an organic radical compound; a hydroxyflavone-metal complex; and a triazine derivative. Alternatively, LiF, NaF, NaCl, CsF, Li2O, BaO, fluorenone, anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylene tetracarboxylic acid, fluorenylidene methane, anthrone, and derivatives thereof, metal complex compounds, or nitrogen-containing five-membered ring derivatives may be used, but are not limited to these.

[0073] Examples of the metal complex compound include, but are not limited to, 8-hydroxyquinolinato lithium, bis(8-hydroxyquinolinato) zinc, bis(8-hydroxyquinolinato) copper, bis(8-hydroxyquinolinato) manganese, tris(8-hydroxyquinolinato) aluminum, tris(2-methyl-8-hydroxyquinolinato) aluminum, tris(8-hydroxyquinolinato) gallium, bis(10-hydroxybenzo[h]quinolinato) beryllium, bis(10-hydroxybenzo[h]quinolinato) zinc, bis(2-methyl-8-quinolinato) chlorogallium, bis(2-methyl-8-quinolinato) (o-cresolate) gallium, bis(2-methyl-8-quinolinato) (1-naphtholato) aluminum, and bis(2-methyl-8-quinolinato) (2-naphtholato) gallium.

[0074] In addition to the above-mentioned materials, the light-emitting layer, the hole-injection layer, the hole-transport layer, the electron-transport layer, and the electron-injection layer may further include inorganic compounds such as quantum dots or polymer compounds.

[0075] The quantum dots may be, for example, colloidal quantum dots, alloy quantum dots, core-shell quantum dots, or core quantum dots. They may be quantum dots containing elements belonging to groups 2 and 16, 13 and 15, 13 and 17, 11 and 17, or 14 and 15, or quantum dots containing elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), and arsenic (As).

[0076] The organic light emitting device according to the present invention may be a bottom emission device, a top emission device, or a dual emission device, and may be a bottom emission device which requires relatively high luminous efficiency.

[0077] Further, the compound according to the present invention is included in organic solar cells or organic transistors in addition to organic light-emitting devices.

[0078] The compound represented by Chemical Formula 1 and the preparation of an organic light-emitting device containing the same will be described in detail in the following examples. However, the following examples are for illustrating the present invention, and the scope of the present invention is not limited thereto. EXAMPLES

[0079] [Example] Example 1: Preparation of Compound 1 [ka]

[0080] Compound 1-a (1.0 eq.), NaOt-Bu (4 eq.), and compound 1-b (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred for 2 h. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution was concentrated under reduced pressure and purified by column chromatography to produce compound 1-c (86% yield).

[0081] Compound 1-d (1.0 eq.), NaOt-Bu (4 eq.), and compound 1-c (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred for 4 h. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 1-e (80% yield).

[0082] Compound 1-e (1.0 eq.), NaOt-Bu (4 eq.), and compound 1-f (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred overnight. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 1-g (87% yield).

[0083] Compound 1-g (1.0 eq.) was placed in a round-bottom flask and dissolved in anhydrous PhMe (0.03 M). BI3 (2.0 eq.) was slowly added dropwise to the reaction mixture and stirred overnight at a bath temperature of 80 °C. After the reaction, the reaction mixture was cooled to room temperature and diluted with CHCl. ​​EtN(i-Pr)2 (15.0 eq.) and saturated NaSO3 aqueous solution were added dropwise to the reaction mixture, and the organic layer was separated by washing with CHCl / HO. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 1 (78% yield). m / z[M+H] + 683.5

[0084] Example 2: Preparation of Compound 2 [ka]

[0085] Compound 2-a (1.0 eq.), NaOt-Bu (4 eq.), and compound 2-b (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred for 2 h. After the reaction, the reaction mixture was cooled to room temperature, thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution was concentrated under reduced pressure and purified by column chromatography to produce compound 2-c (91% yield).

[0086] Thereafter, compound 2 was produced in the same manner as compound 1, except that compound 2-c was used instead of compound 1-f. m / z[M+H] + 791.6

[0087] Example 3: Preparation of Compound 3 [ka]

[0088] Compound 2-a (1.0 eq.), NaOt-Bu (4 eq.), and compound 3-a (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred for 2 h. After the reaction, the reaction mixture was cooled to room temperature, thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution was concentrated under reduced pressure and purified by column chromatography to produce compound 3-b (89% yield).

[0089] Thereafter, compound 3 was produced in the same manner as compound 1, except that compound 3-b was used instead of compound 1-f. m / z[M+H] + 813.6

[0090] Example 4: Preparation of Compound 4 [ka]

[0091] Compound 4-a (1.0 eq.), NaOt-Bu (4 eq.), and compound 2-b (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred for 2 h. After the reaction, the reaction mixture was cooled to room temperature, thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 4-b (92% yield).

[0092] Thereafter, compound 4 was produced in the same manner as compound 1, except that compound 4-b was used instead of compound 1-f. m / z[M+H] + 945.5

[0093] Example 5: Preparation of Compound 5 [ka]

[0094] Compound 5-a (1.0 eq.), NaOt-Bu (4 eq.), and compound 2-b (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred for 2 h. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 5-b (85% yield).

[0095] Thereafter, compound 5 was produced in the same manner as compound 1, except that compound 5-b was used instead of compound 1-f. m / z[M+H] + 793.6

[0096] Example 6: Preparation of Compound 6 [ka]

[0097] Compound 6-a (1.0 eq.), NaOt-Bu (4 eq.), and compound 1-c (2.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 110 °C and stirred for 2 h. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution was concentrated under reduced pressure and purified by column chromatography to produce compound 6-b (86% yield).

[0098] Compound 6-b (1.0 eq.) was placed in a round-bottom flask and dissolved in anhydrous PhMe (0.03 M). BI3 (2.0 eq.) was slowly added dropwise to the reaction mixture and stirred overnight at a bath temperature of 80 °C. After the reaction, the reaction mixture was cooled to room temperature and diluted with CHCl. ​​EtN(i-Pr)2 (15.0 eq.) and saturated NaSO3 (aq.) were added dropwise to the reaction mixture, and the organic layer was separated by washing with CHCl / HO. Water was removed with MgSO4 and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 6 (79% yield). m / z[M+H] + 707.6

[0099] Example 7: Preparation of Compound 7 [ka]

[0100] Compound 7-a (1.0 eq.), NaOt-Bu (4 eq.), and compound 1-c (2.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 110 °C and stirred for 2 h. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution was concentrated under reduced pressure and purified by column chromatography to produce compound 7-b (89% yield).

[0101] Compound 7-b (1.0 eq.), NaOt-Bu (4 eq.), and compound 1-c (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred overnight. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution was concentrated under reduced pressure and purified by column chromatography to produce compound 7-c (79% yield).

[0102] Compound 7-c (1.0 eq.) was placed in a round-bottom flask and dissolved in anhydrous PhMe (0.03 M). BI3 (2.0 eq.) was slowly added dropwise to the reaction mixture and stirred overnight at a bath temperature of 80 °C. After the reaction, the reaction mixture was cooled to room temperature and diluted with CHCl. ​​EtN(i-Pr)2 (15.0 eq.) and saturated NaSO3 (aq.) were added dropwise to the reaction mixture, and the organic layer was separated by washing with CHCl / HO. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 7 (72% yield). m / z[M+H] + 996.6

[0103] Example 8: Preparation of Compound 8 [ka]

[0104] Compound 8-a (1.0 eq.) and compound 8-b (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous THF (0.12 M). K2CO3 (aq.) (1.5 eq.) was added dropwise to the reaction mixture. Pd(PPh3)4 (1.5 mol%) was added dropwise at a bath temperature of 80 °C and stirred overnight. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CH2Cl2, and then washed with CH2Cl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 8-c (82% yield).

[0105] Compound 8-c (1.0 eq.), NaOt-Bu (4 eq.), and compound 2-a (1.05eq.) was placed in a round bottom flask and dissolved in anhydrous PhMe (0.1M). Pd(t-Bu3P)2 (5mol%) was added dropwise at a bath temperature of 120°C and stirred for 2 hours. After the reaction, the reaction mixture was cooled to room temperature, sufficiently diluted with CH2Cl2, and then washed with CH2Cl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution was concentrated under reduced pressure and purified by column chromatography to produce compound 8-d (86% yield).

[0106] Thereafter, compound 8 was produced in the same manner as compound 7, except that compound 8-d was used instead of compound 1-c. m / z[M+H] + 1136.4

[0107] Example 9: Preparation of Compound 9 [ka]

[0108] Compound 9 was prepared in the same manner as Compound 7, except that Compound 9-a was used instead of Compound 1-c. m / z[M+H] + 948.6

[0109] Example 10: Preparation of Compound 10 [ka]

[0110] Compound 10-a (1.0 eq.) and compound 10-b (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous THF (0.12 M). K2CO3 (aq.) (1.5 eq.) was added dropwise to the reaction mixture. Pd(PPh3)4 (1.5 mol%) was added dropwise at a bath temperature of 80 °C and stirred overnight. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CH2Cl2, and then washed with CH2Cl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound 10-c (89% yield).

[0111] Thereafter, compound 10 was produced in the same manner as compound 7, except that compound 10-c was used instead of compound 1-c. m / z[M+H] + 1008.4

[0112] Example 11: Preparation of Compound 11 [ka]

[0113] Compound 11 was prepared in the same manner as Compound 1, except that Compound 11-a was used instead of Compound 1-a, and Compound 11-b was used instead of Compound 1-b. m / z[M+H] + 711.6

[0114] Example 12: Preparation of Compound 12 [ka]

[0115] Compound 12 was prepared in the same manner as compound 11, except that compound 2-c was used instead of compound 1-f. m / z[M+H] + 819.5

[0116] Example 13: Preparation of Compound 13 [ka]

[0117] Compound 13 was prepared in the same manner as compound 11, except that compound 5-b was used instead of compound 1-f. m / z[M+H] + 821.5

[0118] Example 14: Preparation of Compound 14 [ka]

[0119] Compound 14 was prepared in the same manner as compound 6, except that compound 11-c was used instead of compound 1-c. m / z[M+H] + 763.6

[0120] Example 15: Preparation of Compound 15 [ka]

[0121] Compound 15 was prepared in the same manner as in the synthesis of compound 7, except that compound 11-c was used instead of compound 1-c. m / z[M+H] + 1080.4

[0122] Example 16: Preparation of Compound 16 [ka]

[0123] Compound 16 was prepared in the same manner as compound 15, except that compound 9-a was used instead of compound 11-c. m / z[M+H] + 1004.7

[0124] Example 17: Preparation of Compound 17 [ka]

[0125] Compound 17 was prepared in the same manner as Compound 1, except that Compound 17-a was used instead of Compound 1-a, and Compound 17-b was used instead of Compound 1-b. m / z[M+H] + 739.8

[0126] Example 18: Preparation of Compound 18 [ka]

[0127] Compound 18 was prepared in the same manner as compound 17, except that compound 2-c was used instead of compound 1-f. m / z[M+H] + 847.7

[0128] Example 19: Preparation of Compound 19 [ka]

[0129] Compound 19 was prepared in the same manner as compound 17, except that compound 5-b was used instead of compound 1-f. m / z[M+H] + 849.7

[0130] Example 20: Preparation of Compound 20 [ka]

[0131] Compound 20 was prepared in the same manner as compound 6, except that compound 17-c was used instead of compound 1-c. m / z[M+H] + 821.5

[0132] Example 21: Preparation of Compound 21 [ka]

[0133] Compound 21 was prepared in the same manner as compound 7, except that compound 17-c was used instead of compound 1-c. m / z[M+H] + 1164.7

[0134] Example 22: Preparation of Compound 22 [ka]

[0135] Compound 22 was prepared in the same manner as compound 21, except that compound 9-a was used instead of compound 17-c.

[0136] [Comparative Example] Comparative Example 1: Preparation of Compound F [ka]

[0137] Compound 1-d (1.0 eq.), NaOt-Bu (4.0 eq.), and compound Fa (2.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred overnight. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound Fb (75% yield).

[0138] Compound Fb (1.0 eq.) was placed in a round-bottom flask and dissolved in anhydrous PhMe (0.03 M). BI3 (2.0 eq.) was slowly added dropwise to the reaction mixture and stirred overnight at a bath temperature of 80°C. After the reaction, the reaction mixture was cooled to room temperature and diluted with CH2Cl2. EtN(i-Pr)2 (15.0 eq.) and saturated Na2S2O3 (aq.) were added dropwise to the reaction mixture, and the organic layer was separated by washing with CH2Cl2 / H2O. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound F (87% yield). m / z[M+H] + =659.6

[0139] Comparative Example 2: Preparation of Compound G [ka]

[0140] Compound G was produced in the same manner as in Comparative Example 1, except that compound Ga was used instead of compound Fa. m / z[M+H] + =659.5

[0141] Comparative Example 3: Preparation of Compound H [ka]

[0142] Compound Ha (1.0 eq.), NaOt-Bu (4.0 eq.), and compound Hb (1.05 eq.) were placed in a round-bottom flask and dissolved in anhydrous PhMe (0.1 M). Pd(t-Bu3P)2 (5 mol%) was added dropwise at a bath temperature of 120 °C and stirred overnight. After the reaction, the reaction mixture was cooled to room temperature and thoroughly diluted with CHCl2, and then washed with CHCl2 / brine to separate the organic layer. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound Hc (79% yield).

[0143] Compound Hc (1.0 eq.) was placed in a round-bottom flask and dissolved in anhydrous PhMe (0.03 M). BI3 (2.0 eq.) was slowly added dropwise to the reaction mixture and stirred overnight at a bath temperature of 80°C. After the reaction, the reaction mixture was cooled to room temperature and diluted with CH2Cl2. EtN(i-Pr)2 (15.0 eq.) and saturated Na2S2O3 (aq.) were added dropwise to the reaction mixture, and the organic layer was separated by washing with CH2Cl2 / H2O. Water was removed with MgSO4, and the mixture was passed through a Celite-Florisil-Silica pad. The solution that passed through was concentrated under reduced pressure and purified by column chromatography to produce compound H (73% yield). m / z[M+H] + =725.5

[0144] [Experimental Example] Experimental Example 1 A glass substrate coated with a 500 Å-thick thin film of ITO (indium tin oxide) was ultrasonically cleaned in distilled water with detergent dissolved in it. The detergent used was a product of Fischer Co., and the distilled water used was distilled water that had been filtered a second time with a filter made by Millipore Co. After cleaning the ITO for 30 minutes, it was ultrasonically cleaned twice with distilled water for 10 minutes. After the distilled water cleaning was completed, it was ultrasonically cleaned with a solvent of isopropyl and acetone, dried, and then the substrate was washed for 5 minutes and then transported to a glove box.

[0145] On the ITO transparent electrode, a coating composition in which the following compound O and compound P (weight ratio of 2:8) were dissolved in cyclohexanone at 20 wt / v% was spin-coated (4000 rpm) and heat-treated (cured) at 200°C for 30 minutes to form a hole injection layer with a thickness of 400 Å. On the hole injection layer, a coating composition in which the following compound Q (Mn: 27,900; Mw: 35,600; measured by GPC using PC standard with Agilent 1200 series) was dissolved in toluene at 6 wt / v% was spin-coated (4000 rpm) and heat-treated at 200°C for 30 minutes to form a hole transport layer with a thickness of 200 Å. On the hole transport layer, the prepared compound 1 and the following compound R (weight ratio of 2:98) were dissolved in cyclohexanone at 2 wt / v % to form a coating composition, which was spin-coated (4000 rpm) and heat-treated at 180° C. for 30 minutes to form a light emitting layer with a thickness of 400 Å. After being transferred to a vacuum deposition machine, the following compound S was vacuum-deposited on the light emitting layer with a thickness of 350 Å to form an electron injection and transport layer. On the electron injection and transport layer, LiF was sequentially deposited with a thickness of 10 Å and aluminum with a thickness of 1000 Å to form a cathode.

[0146] [ka]

[0147] In the above process, the deposition rate of the organic material was maintained at 0.4-0.7 Å / s, the deposition rate of LiF was maintained at 0.3 Å / s, and the deposition rate of aluminum was maintained at 2 Å / s. The degree of vacuum during deposition was 2×10 -7 ~5×10 -8 torr was maintained.

[0148] Experimental Example 2 to Experimental Example 22 An organic light emitting device was manufactured in the same manner as in Experimental Example 1, except that the compound shown in Table 1 below was used instead of Compound 1.

[0149] Comparative Experimental Examples 1-3 An organic light emitting device was manufactured in the same manner as in Experimental Example 1, except that the compound shown in Table 1 below was used instead of Compound 1.

[0150] When a current was applied to the organic light emitting devices manufactured in the above experimental example and comparative experimental example, the current was 10 mA / cm 2 The results of measuring the driving voltage, external quantum efficiency (EQE) and lifetime at a current density of 1000 nits are shown in Table 1 below. Here, the external quantum efficiency (EQE) is calculated by (number of emitted photons) / (number of injected charge carriers) x 100, and T90 is the time it takes for the brightness to decrease to 90% from the initial brightness (500 nits).

[0151] [Table 1]

[0152] As shown in Table 1, the organic light emitting device containing the compound of the present invention in the light emitting layer exhibited excellent properties in terms of efficiency, driving voltage and life span of the organic light emitting device. [Explanation of symbols]

[0153] 1: Substrate 2:Anode 3: Light-emitting layer 4: Cathode 5: Hole injection layer 6: Hole transport layer 7: Light-emitting layer 8: Electron injection and transport layer

Claims

1. A compound represented by any one of the following formulae 1-3 to 1-5: 【Chemistry 1】 【Chemistry 2】 In the above Chemical Formula 1-3 to Chemical Formula 1-5, Ar １ is a benzene or benzothiophene fused to an adjacent ring, Ar ２ is a benzene fused to two adjacent rings, R １ is hydrogen, deuterium, or tert-butyl, or two adjacent R 1 s are bonded to each other to form a group represented by the following formula: 【Chemistry 3】 and forming a substituent represented by R ２ is hydrogen, deuterium, tert-butyl, phenyl, or phenyl substituted with tert-butyl, or two adjacent R 2 s are bonded to each other to form the following formula: 【Chemistry 4】 and forming a substituent represented by R ３ is a substituted or unsubstituted C １－６０ Alkyl, substituted or unsubstituted C ３－６０ Cycloalkyl, or substituted or unsubstituted C ６－６０ It is an aryl or a substituent represented by any one of the following formulas 2 to 4: 【Chemistry 5】 In the above Chemical Formula 2, R ４ are each independently hydrogen, deuterium, or two adjacent R ４ are bonded to each other to form a substituted or unsubstituted C ３－１０ Alkylene, or substituted or unsubstituted C ６－６０ Forms an aromatic ring, 【Chemistry 6】 In the above formula 3, R ５ are each independently hydrogen, deuterium, substituted or unsubstituted C １－６０ is alkyl, 【Chemistry 7】 In the above formula 4, R ６ is hydrogen, deuterium, substituted or unsubstituted C １－６０ C containing one or more heteroatoms selected from the group consisting of alkyl, substituted or unsubstituted N, O and S. ２－６０ is heteroaryl, n1 is an integer from 1 to 4, n2 is an integer from 0 to 5.

2. R ３ is methyl, isopropyl, tert-butyl, cyclohexyl, phenyl, adamantyl, or any one of the following substituents: The compound of claim 1: 【Chemistry 8】

3. The compound represented by Chemical Formula 1 is any one selected from the group consisting of the following compounds: The compound of claim 1: 【Chemistry 9】 【Chemistry 10】 。

4. An organic light-emitting device comprising: a first electrode; a second electrode provided opposite to the first electrode; and one or more organic material layers provided between the first electrode and the second electrode, wherein one or more of the organic material layers comprises the compound according to any one of claims 1 to 3.

5. The organic layer is a light-emitting layer. The organic light-emitting device according to claim 4 .

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