Temperature control device and substrate processing device

Abstract

To provide a temperature controller and a substrate processing apparatus capable of reducing an energy loss for maintaining the temperatures of heat media having a large temperature difference.SOLUTION: A temperature controller comprises: a first tank for reserving a first heat medium; a second tank for reserving a second heat medium having a temperature different from that of the first heat medium; and a first communication pipe that connects an upper limit level of the height of the surface of liquid in the first tank with a lower limit level of the height of the surface of liquid in the second tank.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a temperature control device and a substrate processing device.

Background Art

[0002] In a substrate processing device, a chiller may be used to control the temperature by supplying and circulating a high-temperature heat medium and a low-temperature heat medium to flow paths in a mounting table by pumps respectively. In such a type of chiller, tanks for storing the heat medium are used on the high-temperature side and the low-temperature side respectively, and it has been proposed to provide a liquid level adjustment tank that communicates between the high-temperature side tank and the low-temperature side tank for liquid level control (Patent Document 1). Further, it has been proposed to connect between the high-temperature side and low-temperature side tanks with a passive leveling pipe at the same level (Patent Document 2).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a temperature control device and a substrate processing device capable of reducing energy loss for maintaining the temperature of a heat medium with a large temperature difference.

Means for Solving the Problems

[0005] A temperature control device according to one aspect of the present disclosure includes a first tank for storing a first heat transfer medium, a second tank for storing a second heat transfer medium at a different temperature from the first heat transfer medium, and a first connecting pipe for connecting an upper limit level of the liquid level in the first tank and a lower limit level of the liquid level in the second tank. [Effects of the Invention]

[0006] According to this disclosure, it is possible to reduce energy loss required to maintain the temperature of a heat transfer medium with a large temperature difference. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus in one embodiment of the present disclosure. [Figure 2] Figure 2 shows an example of a temperature control device in this embodiment. [Figure 3] Figure 3 shows an example of the configuration of a connecting pipe that connects tanks in this embodiment. [Figure 4] Figure 4 shows an example of the change in the liquid level during heating in this embodiment. [Figure 5] Figure 5 shows an example of the change in the liquid level during cooling in this embodiment. [Figure 6] Figure 6 shows an example of the configuration of the connecting pipes between tanks in Modification Example 1. [Figure 7] Figure 7 shows an example of the change in the liquid level during heating in Modification Example 1. [Figure 8] Figure 8 shows an example of the change in the liquid level during cooling in Modification Example 1. [Figure 9] Figure 9 shows an example of the configuration of the connecting pipes between tanks in Modification Example 2. [Figure 10] Figure 10 shows an example of the change in the liquid level during cooling in Modification Example 2. [Figure 11] Figure 11 shows an example of a temperature control device in modified example 3. [Modes for carrying out the invention]

[0008] Embodiments of the temperature control device and substrate processing device disclosed below will be described in detail below with reference to the drawings. However, the disclosed technology is not limited to the embodiments described below.

[0009] When storing heat transfer fluid in separate tanks, one at a high temperature and the other at a low temperature, it is necessary to control the liquid level in each tank to prevent overflow or pump dry run due to insufficient liquid volume. Therefore, connecting the bottoms and tops of the tanks with connecting pipes allows for the exchange of heat transfer fluid and gases between them. However, when connecting tanks with large temperature differences using connecting pipes, unevenness in the return circulating fluid volume occurs, causing the heat transfer fluid to move to equalize the liquid level. This results in significant energy loss in maintaining the heat transfer fluid temperature at the set temperature. Factors contributing to uneven return circulating fluid volume include, for example, volume changes due to temperature fluctuations in the heat transfer fluid, switching of check valves and other valves, evaporation in the high-temperature tank and liquefaction in the low-temperature tank, and pulsation of the circulation pump. Therefore, it is desirable to reduce the energy loss required to maintain the temperature of heat transfer fluids with large temperature differences between tanks connected by connecting pipes.

[0010] [Configuration of substrate processing apparatus 1] Figure 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus in one embodiment of the present disclosure. The substrate processing apparatus 1 is a plasma etching apparatus equipped with, for example, parallel plate electrodes. The substrate processing apparatus 1 comprises an apparatus body 10 and a control device 11. The apparatus body 10 is made of a material such as aluminum and has a processing container 12 having, for example, a substantially cylindrical shape. The inner wall surface of the processing container 12 is subjected to anodizing treatment. The processing container 12 is also grounded for safety.

[0011] On the bottom of the processing container 12, a substantially cylindrical support portion 14 made of an insulating material such as quartz, for example, is provided. The support portion 14 extends vertically (for example, toward the upper electrode 30) from the bottom of the processing container 12 within the processing container 12.

[0012] A mounting table PD is provided within the processing container 12. The mounting table PD is supported by the support portion 14. The mounting table PD holds the wafer W on the upper surface of the mounting table PD. The wafer W is an example of an object to be temperature-controlled. The mounting table PD has an electrostatic chuck ESC and a lower electrode LE. The lower electrode LE is made of a metal material such as aluminum, for example, and has a substantially disk shape. The electrostatic chuck ESC is disposed on the lower electrode LE. The lower electrode LE is an example of a heat exchange member that performs heat exchange with the object to be temperature-controlled.

[0013] The electrostatic chuck ESC has a structure in which an electrode EL, which is a conductive film, is disposed between a pair of insulating layers or between a pair of insulating sheets. A DC power supply 17 is electrically connected to the electrode EL via a switch SW. The electrostatic chuck ESC adsorbs the wafer W onto the upper surface of the electrostatic chuck ESC by an electrostatic force such as a Coulomb force generated by the DC voltage supplied from the DC power supply 17. Thereby, the electrostatic chuck ESC can hold the wafer W.

[0014] A heat transfer gas such as He gas, for example, is supplied to the electrostatic chuck ESC via a pipe 19. The heat transfer gas supplied via the pipe 19 is supplied between the electrostatic chuck ESC and the wafer W. By adjusting the pressure of the heat transfer gas supplied between the electrostatic chuck ESC and the wafer W, the heat conductivity between the electrostatic chuck ESC and the wafer W can be adjusted.

[0015] Also, inside the electrostatic chuck ESC, a heater HT, which is a heating element, is provided. A heater power supply HP is connected to the heater HT. By supplying power from the heater power supply HP to the heater HT, the wafer W on the electrostatic chuck ESC can be heated via the electrostatic chuck ESC. The temperature of the wafer W placed on the electrostatic chuck ESC is adjusted by the lower electrode LE and the heater HT. Note that the heater HT may be disposed between the electrostatic chuck ESC and the lower electrode LE.

[0016] An edge ring ER is disposed around the electrostatic chuck ESC so as to surround the edge of the wafer W and the electrostatic chuck ESC. The edge ring ER is sometimes called a focus ring. The edge ring ER can improve the in-plane uniformity of the processing on the wafer W. The edge ring ER is made of a material appropriately selected according to the material of the film to be etched, such as quartz.

[0017] Inside the lower electrode LE, a flow path 15 through which a heat medium, which is an insulating fluid such as Galden (registered trademark), flows is formed. Note that the heat medium may be referred to as brine. A temperature control device 20 is connected to the flow path 15 via pipes 16a and 16b. The temperature control device 20 controls the temperature of the heat medium flowing in the flow path 15 of the lower electrode LE. The heat medium whose temperature is controlled by the temperature control device 20 is supplied into the flow path 15 of the lower electrode LE via the pipe 16a. The heat medium that has flowed through the flow path 15 is returned to the temperature control device 20 via the pipe 16b.

[0018] The temperature control device 20 circulates the heat transfer medium flowing through the channel 15 of the lower electrode LE. The temperature control device 20 also mixes the heat transfer medium at a first temperature or a second temperature with the circulating heat transfer medium and supplies it into the channel 15 of the lower electrode LE. By mixing the heat transfer medium at the first temperature or the second temperature with the circulating heat transfer medium and supplying it into the channel 15 of the lower electrode LE, the temperature of the lower electrode LE is controlled to a set temperature. The first temperature is, for example, a temperature above room temperature, and the second temperature is, for example, a temperature below 0°C. Hereinafter, the heat transfer medium at the first temperature will be referred to as the first heat transfer medium, and the heat transfer medium at the second temperature will be referred to as the second heat transfer medium. The first heat transfer medium and the second heat transfer medium are fluids of the same material, although their temperatures differ. The temperature control device 20 and the control device 11 are examples of heat transfer medium control devices.

[0019] A power supply tube 69 for supplying high-frequency power to the lower electrode LE is electrically connected to the lower surface of the lower electrode LE. The power supply tube 69 is made of metal. Although not shown in Figure 1, lifter pins and their drive mechanisms for transferring wafers W on the electrostatic chuck ESC are arranged in the space between the lower electrode LE and the bottom of the processing container 12.

[0020] A first high-frequency power supply 64 is connected to the feed tube 69 via a matching circuit 68. The first high-frequency power supply 64 is a power supply that generates high-frequency power, i.e., high-frequency bias power, for drawing ions into the wafer W, and generates high-frequency bias power with a frequency of, for example, 400 kHz to 40.68 MHz, or in one example, 13.56 MHz. The matching circuit 68 is a circuit for matching the output impedance of the first high-frequency power supply 64 with the input impedance of the load (lower electrode LE). The high-frequency bias power generated by the first high-frequency power supply 64 is supplied to the lower electrode LE via the matching circuit 68 and the feed tube 69.

[0021] An upper electrode 30 is provided above the mounting stage PD, in a position opposite to the mounting stage PD. The lower electrode LE and the upper electrode 30 are arranged to be substantially parallel to each other. Plasma is generated in the space between the upper electrode 30 and the lower electrode LE, and plasma processing such as etching is performed on the wafer W held on the upper surface of the electrostatic chuck ESC by the generated plasma. The space between the upper electrode 30 and the lower electrode LE is the processing space PS.

[0022] The upper electrode 30 is supported on the upper part of the processing container 12 via an insulating shielding member 32 made of, for example, quartz. The upper electrode 30 has an electrode plate 34 and an electrode support 36. The lower surface of the electrode plate 34 faces the processing space PS. Multiple gas outlets 34a are formed in the electrode plate 34. The electrode plate 34 is made of, for example, a material containing silicon.

[0023] The electrode support 36 is made of a conductive material such as aluminum and detachably supports the electrode plate 34 from above. The electrode support 36 may have a water-cooling structure (not shown). A diffusion chamber 36a is formed inside the electrode support 36. Multiple gas flow ports 36b extend downward (towards the mounting stage PD) from the diffusion chamber 36a, communicating with the gas discharge port 34a of the electrode plate 34. The electrode support 36 is provided with a gas inlet 36c for guiding the processed gas into the diffusion chamber 36a, and a pipe 38 is connected to the gas inlet 36c.

[0024] A gas source group 40 is connected to the piping 38 via a valve group 42 and a flow controller group 44. The gas source group 40 has multiple gas sources. The valve group 42 includes multiple valves, and the flow controller group 44 includes multiple flow controllers such as mass flow controllers. Each of the gas source groups 40 is connected to the piping 38 via a corresponding valve in the valve group 42 and a corresponding flow controller in the flow controller group 44.

[0025] As a result, the main unit 10 can supply processing gas from one or more gas sources selected from the gas source group 40 to the diffusion chamber 36a in the electrode support 36 at individually adjusted flow rates. The processing gas supplied to the diffusion chamber 36a diffuses within the diffusion chamber 36a and is supplied in a shower-like manner into the processing space PS through the respective gas flow ports 36b and gas discharge ports 34a.

[0026] A second high-frequency power supply 62 is connected to the electrode support 36 via a matching circuit 66. The second high-frequency power supply 62 is a power supply that generates high-frequency power for plasma generation, and generates high-frequency power with a frequency of, for example, 27 to 100 MHz, and in one example, a frequency of 60 MHz. The matching circuit 66 is a circuit for matching the output impedance of the second high-frequency power supply 62 with the input impedance of the load (upper electrode 30). The high-frequency power generated by the second high-frequency power supply 62 is supplied to the upper electrode 30 via the matching circuit 66. The second high-frequency power supply 62 may also be connected to the lower electrode LE via the matching circuit 66.

[0027] Deposit shields 46, made of aluminum or the like with a surface coated with Y2O3 or quartz, are detachably provided on the inner wall surface of the processing container 12 and the outer surface of the support portion 14. The deposit shields 46 prevent etching by-products (deposits) from adhering to the processing container 12 and the support portion 14.

[0028] Between the outer wall of the support section 14 and the inner wall of the processing container 12, on the bottom side of the processing container 12 (the side where the support section 14 is installed), an exhaust plate 48 is provided, which is made of aluminum or the like with a surface coated with Y2O3 or quartz. Below the exhaust plate 48, an exhaust port 12e is provided. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52.

[0029] The exhaust system 50 has a vacuum pump such as a turbomolecular pump and can reduce the vacuum level of the space inside the processing container 12 to a desired level. An opening 12g for loading or unloading wafers W is provided in the side wall of the processing container 12, and the opening 12g can be opened and closed by a gate valve 54.

[0030] The control device 11 includes a processor, memory, and an input / output interface. The memory stores a program executed by the processor, as well as a recipe containing conditions for each process. The processor executes the program read from the memory and, based on the recipe stored in the memory, controls each part of the device body 10 via the input / output interface to perform a predetermined process such as etching on the wafer W. The control device 11 is an example of a control unit.

[0031] [Configuration of the temperature control device 20] Figure 2 shows an example of a temperature control device in this embodiment. The temperature control device 20 includes a circulation unit 200, a first temperature control unit 220, and a second temperature control unit 240. For example, the circulation unit 200 is installed on the same floor as the processing container 12, and the first temperature control unit 220 and the second temperature control unit 240 are installed on floors below the circulation unit 200.

[0032] The circulation unit 200 has a valve 201 whose outlet side is connected to piping 16a. The circulation unit 200 also has a pump 202 connected to piping 16b, which circulates the heat transfer medium flowing through the flow path 15 of the lower electrode LE. The outlet side of piping 16b of pump 202 is connected to the inlet side of valve 201 via a check valve 206 and piping 207 at connection point A. During pump 202 operation, the pressure in piping 207 is lower than the pressure in piping 16b on the outlet side of pump 202, causing the check valve 206 to open. Therefore, the heat transfer medium circulates through the path of pump 202, piping 16b, check valve 206, piping 207, valve 201, piping 16a, flow path 15, and piping 16b. Note that piping 207 is an example of a third type of piping. Furthermore, a temperature sensor 203 is provided in piping 16a within the circulation unit 200 to detect the temperature on the inlet side of the flow path 15. The temperature sensor 203 may be located outside the temperature control device 20. For example, the temperature sensor 203 may be located directly below the lower electrode LE, for example, at the connection point between the pipe 16a and the flow path 15, or it may be located midway between the lower electrode LE and the temperature control device 20.

[0033] The first temperature control unit 220 is connected to pipe 16a via pipe 229, pipe 210, and valve 201. The first temperature control unit 220 is also connected to pipe 16b via pipe 230, pipe 212, and check valve 204. The connection point B between pipe 229 and pipe 210 and the connection point C between pipe 230 and pipe 212 are connected by a bypass pipe 211. A monitoring pressure sensor 208 is provided at connection point C.

[0034] In this embodiment, the first temperature control unit 220 controls the temperature of the first heat transfer medium. The first temperature control unit 220 mixes the temperature-controlled first heat transfer medium with the heat transfer medium circulating from pipe 207 to pipe 16a via pipe 229, pipe 210, and valve 201, and supplies it into the flow path 15 of the lower electrode LE. The temperature of the first heat transfer medium is higher than the temperature of the second heat transfer medium, for example, it can be 90°C. However, the temperature of the first heat transfer medium can be any temperature higher than the temperature of the second heat transfer medium. The pressure in pipes 210-212, 229, and 230 decreases as the first heat transfer medium is supplied into the flow path 15 of the lower electrode LE. The heat transfer medium discharged from the flow path 15 is returned to the first temperature control unit 220 via pipes 212 and 230, passing through a check valve 204 that opens due to a decrease in pressure at connection point A of pipe 16b. The piping consisting of pipes 229, 210, and 16a is an example of a supply pipe or a first supply pipe. The piping consisting of pipes 16b, 212, and 230 is an example of a return pipe or a first return pipe. Furthermore, the piping consisting of pipes 210-212, 229, and 230 is an example of a first pipe.

[0035] The first temperature control unit 220 supplies the heat transfer medium from the reservoir tank 221 to the piping 229 using a pump 222. A heat exchanger 223, a flow sensor 224, a pressure sensor 225, a temperature sensor 226, and a variable valve 227 are provided on the outlet side of the pump 222. In other words, the heat exchanger 223, flow sensor 224, pressure sensor 225, temperature sensor 226, and variable valve 227 are located immediately after the pump 222. The heat exchanger 223 heats or cools the heat transfer medium supplied to the piping 229 to a set temperature. The flow sensor 224 detects the flow rate of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 229. The pressure sensor 225 detects the pressure of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 229. The temperature sensor 226 detects the temperature of the heat transfer medium supplied by the pump 222 on the outlet side of the piping 229. The variable valve 227, together with the variable valve 228 on the return pipe side of pipe 230, adjusts the pressure in pipe 229 of the heat transfer medium supplied by pump 222.

[0036] The second temperature control unit 240 is connected to pipe 16a via pipe 249, pipe 213, and valve 201. The second temperature control unit 240 is also connected to pipe 16b via pipe 250, pipe 215, and check valve 205. The connection point D between pipe 249 and pipe 213 and the connection point E between pipe 250 and pipe 215 are connected by a bypass pipe 214. A monitoring pressure sensor 209 is provided at connection point E.

[0037] In this embodiment, the second temperature control unit 240 controls the temperature of the second heat transfer medium. The second temperature control unit 240 mixes the temperature-controlled second heat transfer medium with the heat transfer medium circulating from pipe 207 to pipe 16a via pipe 249, pipe 213, and valve 201, and supplies it into the flow path 15 of the lower electrode LE. The temperature of the second heat transfer medium is lower than the temperature of the first heat transfer medium, for example, it can be -10°C. The temperature of the second heat transfer medium can be any temperature lower than the temperature of the first heat transfer medium. The pressure in pipes 213-215, 249, and 250 decreases as the second heat transfer medium is supplied into the flow path 15 of the lower electrode LE. The heat transfer medium discharged from the flow path 15 passes through a check valve 205 that opens due to a decrease in pressure at connection point A of pipe 16b, and is returned to the second temperature control unit 240 via pipes 215 and 250. The piping consisting of pipes 249, 213, and 16a is an example of a supply pipe or a second supply pipe. The piping consisting of pipes 16b, 215, and 250 is an example of a return pipe or a second return pipe. Furthermore, the piping consisting of pipes 213-215, 249, and 250 is an example of a second pipe.

[0038] In the second temperature control unit 240, the pump 242 supplies the heat transfer medium from the reservoir tank 241 to the piping 249. A heat exchanger 243, a flow sensor 244, a pressure sensor 245, a temperature sensor 246, and a variable valve 247 are provided on the outlet side of the pump 242. In other words, the heat exchanger 243, flow sensor 244, pressure sensor 245, temperature sensor 246, and variable valve 247 are located immediately after the pump 242. The heat exchanger 243 heats or cools the heat transfer medium supplied to the piping 249 to a set temperature. The flow sensor 244 detects the flow rate of the heat transfer medium supplied by the pump 242 on the outlet side of the piping 249. The pressure sensor 245 detects the pressure of the heat transfer medium supplied by the pump 242 on the outlet side of the piping 249. The temperature sensor 246 detects the temperature of the heat transfer medium supplied by the pump 242 on the outlet side of the piping 249. The variable valve 247, together with the variable valve 248 on the return pipe side of pipe 250, adjusts the pressure in pipe 249 of the heat transfer medium supplied by pump 242.

[0039] The reservoir tank 221 of the first temperature control unit 220 and the reservoir tank 241 of the second temperature control unit 240 are connected by pipes 251 and 252. Pipes 251 and 252 are examples of connecting pipes and adjust the liquid level of the reservoir tank 221, which stores the first heat transfer medium, and the liquid level of the reservoir tank 241, which stores the second heat transfer medium. Pipe 251 is a pipe for the movement of gas (air, evaporated heat transfer medium, etc.) between the reservoir tanks 221 and 241. Pipe 252 is a pipe for the movement of liquid (heat transfer medium) between the reservoir tanks 221 and 241. This prevents leakage of the heat transfer medium.

[0040] The opening degrees of valves 201, 227, 228, 247, and 248, the discharge pressure of pumps 202, 222, and 242, and the temperatures in heat exchangers 223 and 243 are controlled by the control device 11, respectively. Pumps 202, 222, and 242 are pumps whose discharge pressure can be controlled according to the inverter frequency. The opening degree of valve 201 can be adjusted, for example, between +100% and -100%. When valve 201 is at 0%, the entire heat transfer medium from pipe 207 flows into pipe 16a, and the heat transfer medium from pipes 210 and 213 does not flow into pipe 16a. When valve 201 is at +100%, the entire heat transfer medium from pipe 210 flows into pipe 16a, and the heat transfer medium from pipes 207 and 213 does not flow into pipe 16a. On the other hand, when valve 201 is open to -100%, the entire heat transfer fluid from pipe 213 flows into pipe 16a, and the heat transfer fluid from pipes 207 and 210 does not flow into pipe 16a.

[0041] In other words, if you want to raise the temperature of the circulating heat transfer medium by mixing in the first heat transfer medium on the high-temperature side, you change the opening of valve 201 from the 0% position to the positive side. On the other hand, if you want to lower the temperature of the circulating heat transfer medium by mixing in the second heat transfer medium on the low-temperature side, you change the opening of valve 201 from the 0% position to the negative side. For example, when plasma processing is performed by igniting plasma in the processing space PS, heat is also supplied from the plasma to the lower electrode LE. Therefore, in order to keep the temperature of the lower electrode LE constant, for example, you can set the opening of valve 201 to -10%, set the flow rate of the heat transfer medium circulating in pipe 207 to 90%, and mix in 10% of the second heat transfer medium on the low-temperature side of pipe 213.

[0042] [Configuration of connecting pipes] Next, the configuration of the connecting pipe according to this embodiment will be described. Figure 3 is a diagram showing an example of the configuration of the connecting pipe that connects tanks in this embodiment.

[0043] As shown in Figure 3, the high-temperature reservoir tank 221 and the low-temperature reservoir tank 241 are connected by a pipe 251, which is a communication pipe for gas, and a pipe 252, which is a communication pipe for liquid (heat transfer medium). Pipe 251 connects the top surface of reservoir tank 221 to the top surface of reservoir tank 241. Note that reservoir tank 221 is an example of a first tank, and reservoir tank 241 is an example of a second tank.

[0044] The liquid level in reservoir tanks 221 and 241 is maintained approximately midway between the upper and lower limits, which represent the appropriate liquid volume control range, during the circulation of the heat transfer medium. The appropriate control range defines the amount of heat transfer medium that allows for stable temperature control of the temperature-controlled object. In the following explanation, the upper limit is represented as "High" and the lower limit as "Low" in Figures 3 to 8. The upper limit is set to the liquid level that moves the heat transfer medium to the other reservoir tank in order to prevent it from overflowing from the pressure relief valve (not shown) located on the top surface of reservoir tanks 221 and 241. The lower limit is set to the liquid level that ensures a constant liquid volume in reservoir tanks 221 and 241 in order to prevent the pumps 222 and 242 that supply the heat transfer medium from running dry.

[0045] The piping 252 connects the lower limit level of reservoir tank 221 to the upper limit level of reservoir tank 241. During circulation of the heat transfer medium, the liquid level in piping 252 is the same as the liquid level in reservoir tank 221. Furthermore, the heat transfer medium does not move between reservoir tank 221 and reservoir tank 241 via piping 252. In other words, the heat transfer medium in the high-temperature reservoir tank 221 and the heat transfer medium in the low-temperature reservoir tank 241 do not mix, thus reducing the energy loss required to maintain the respective temperatures of the heat transfer mediums with large temperature differences. Alternatively, piping 252 may be configured to connect the upper limit level of reservoir tank 221 to the lower limit level of reservoir tank 241.

[0046] Figure 4 shows an example of the change in the liquid level during heating in this embodiment. As shown in Figure 4, when the temperature of the lower electrode LE is raised, the supply of the heat transfer medium from the high-temperature side is started via the piping 229, causing the liquid level in the reservoir tank 221 to drop. On the other hand, the liquid level in the reservoir tank 241 rises because the supply of the heat transfer medium from the low-temperature side is stopped. The heat transfer medium in the reservoir tank 241 moves to the reservoir tank 221 via the piping 252 only as much as exceeds the upper limit level. Therefore, the liquid level in the reservoir tank 221 is maintained at the lower limit level, and the liquid level in the reservoir tank 241 does not significantly exceed the upper limit level. At this time, the amount of heat transfer medium moving from the low-temperature reservoir tank 241 to the high-temperature reservoir tank 221 is limited, so the temperature drop of the heat transfer medium in the high-temperature reservoir tank 221 can be reduced, and the energy loss required to maintain a constant temperature can be reduced.

[0047] Figure 5 shows an example of the change in liquid level during cooling in this embodiment. As shown in Figure 5, when the temperature of the lower electrode LE is cooled, the supply of the heat transfer medium from the low-temperature side is started via the piping 249, causing the liquid level in the reservoir tank 241 to drop. On the other hand, the liquid level in the reservoir tank 221 rises because the supply of the heat transfer medium from the high-temperature side is stopped. The heat transfer medium in the reservoir tank 221 moves to the reservoir tank 241 via the piping 252 only if it exceeds the upper limit level. Therefore, the liquid level in the reservoir tank 241 is maintained at the lower limit level, and the liquid level in the reservoir tank 221 does not significantly exceed the upper limit level. At this time, the amount of heat transfer medium moving from the high-temperature reservoir tank 221 to the low-temperature reservoir tank 241 is limited, so the temperature rise of the heat transfer medium in the low-temperature reservoir tank 241 can be reduced, and the energy loss required to maintain a constant temperature can be reduced.

[0048] [Example 1] In the above embodiment, the high-temperature reservoir tank 221 and the low-temperature reservoir tank 241 were directly connected by piping 252. However, they may also be connected via a tank at room temperature (the same temperature as the surrounding atmosphere). This embodiment will be described as Modification 1. Note that some of the configurations of the substrate processing apparatus and temperature control apparatus in Modification 1 are the same as in the above embodiment, so the explanation of the overlapping configurations and operations will be omitted.

[0049] Figure 6 shows an example of the configuration of the connecting pipes between tanks in Modification 1. As shown in Figure 6, in Modification 1, a middle tank 280 is provided between reservoir tank 221 and reservoir tank 241. The high-temperature reservoir tank 221 and the middle tank 280 are connected by a pipe 251a, which is a connecting pipe for gas, and a pipe 252a, which is a connecting pipe for liquid (heat transfer medium). Pipe 251a connects the top side of reservoir tank 221 to the top side of middle tank 280. The low-temperature reservoir tank 241 and the middle tank 280 are connected by a pipe 251b, which is a connecting pipe for gas, and a pipe 252b, which is a connecting pipe for liquid (heat transfer medium). Pipe 251b connects the top side of reservoir tank 241 to the top side of middle tank 280.

[0050] The middle tank 280 is not temperature-controlled, and the heat transfer medium inside the middle tank 280 exchanges heat with the outside air through the walls of the middle tank 280, remaining at room temperature (e.g., 20°C) unless there is an inflow of heat transfer medium from the reservoir tank 221 or reservoir tank 241. In other words, the middle tank 280 stores a third heat transfer medium at room temperature. The middle tank 280 is an example of a third tank. The bottom of the middle tank 280 is higher than that of the reservoir tanks 221 and 241. This allows for liquid level control via the middle tank 280 with a minimum amount of liquid. The top of the middle tank 280 is at the same position as the reservoir tanks 221 and 241. The liquid level in the reservoir tanks 221, 241 and the middle tank 280 is maintained approximately midway between the upper and lower limits during the circulation of the heat transfer medium, similar to the embodiment described above.

[0051] The piping 252a connects the upper limit level of the reservoir tank 221 to the lower limit level of the middle tank 280. During circulation of the heat transfer medium, the liquid level in piping 252a is the same as the liquid level in the middle tank 280. Furthermore, the heat transfer medium does not move between the reservoir tank 221 and the middle tank 280 via piping 252a. In other words, the heat transfer medium in the high-temperature reservoir tank 221 and the heat transfer medium in the room-temperature middle tank 280 do not mix, thus reducing the energy loss required to maintain the temperature of the higher-temperature heat transfer medium, which has a large temperature difference. Alternatively, piping 252a may be configured to connect the lower limit level of the reservoir tank 221 to the upper limit level of the middle tank 280.

[0052] The piping 252b connects the upper limit level of the reservoir tank 241 to the lower limit level of the middle tank 280. During circulation of the heat transfer medium, the liquid level in piping 252b is the same as the liquid level in the middle tank 280. Furthermore, the heat transfer medium does not move between the reservoir tank 241 and the middle tank 280 via piping 252b. In other words, the heat transfer medium in the lower temperature reservoir tank 241 and the heat transfer medium in the room temperature middle tank 280 do not mix, thus reducing the energy loss required to maintain the temperature of the lower temperature heat transfer medium, which has a large temperature difference. Alternatively, piping 252b may be configured to connect the lower limit level of the reservoir tank 241 to the upper limit level of the middle tank 280.

[0053] In the reservoir tanks 221, 241 and the middle tank 280, there will be spaces 282 to 284 above the liquid surface when the heat transfer medium is circulating. These spaces 282 to 284 can be used, for example, as tanks for storing the heat transfer medium during maintenance of the substrate processing apparatus 1. By providing the middle tank 280, even if the capacity of the reservoir tanks 221 and 241 is reduced, the same amount of heat transfer medium as in the above embodiment can be stored in the reservoir tanks 221, 241 and the middle tank 280.

[0054] Figure 7 shows an example of the change in liquid level during heating in Modification 1. As shown in Figure 7, when the temperature of the lower electrode LE is raised, the supply of the high-temperature heat transfer medium is started via the piping 229, causing the liquid level in the reservoir tank 221 to drop. On the other hand, the liquid level in the reservoir tank 241 rises because the supply of the low-temperature heat transfer medium is stopped. The heat transfer medium in the reservoir tank 241 moves to the middle tank 280 via the piping 252b only if it exceeds the upper limit level. When the liquid level in the middle tank 280 rises, the amount exceeding the upper limit level moves to the reservoir tank 221 via the piping 252a. Therefore, the liquid level in the reservoir tank 221 is maintained at the lower limit level, and the liquid levels in the reservoir tank 241 and the middle tank 280 do not significantly exceed the upper limit level. In this case, the amount of heat transfer fluid moving from the low-temperature reservoir tank 241 to the high-temperature reservoir tank 221 is limited, and because it passes through the room-temperature middle tank 280, the temperature drop of the heat transfer fluid in the high-temperature reservoir tank 221 can be reduced, and the energy loss required to maintain a constant temperature can be reduced. In other words, since the room-temperature heat transfer fluid from the middle tank 280 flows into the high-temperature reservoir tank 221, the energy loss required to maintain a constant temperature can be reduced compared to when the low-temperature heat transfer fluid from the low-temperature reservoir tank 241 flows in.

[0055] Figure 8 shows an example of the change in liquid level during cooling in Modification 1. As shown in Figure 8, when the temperature of the lower electrode LE is cooled, the supply of the low-temperature heat transfer medium is started via the pipe 249, causing the liquid level in the reservoir tank 241 to drop. On the other hand, the liquid level in the reservoir tank 221 rises because the supply of the high-temperature heat transfer medium is stopped. The heat transfer medium in the reservoir tank 221 moves to the middle tank 280 via the pipe 252a only if it exceeds the upper limit level. When the liquid level in the middle tank 280 rises, the amount exceeding the upper limit level moves to the reservoir tank 241 via the pipe 252b. Therefore, the liquid level in the reservoir tank 241 is maintained at the lower limit level, and the liquid levels in the reservoir tank 221 and the middle tank 280 do not significantly exceed the upper limit level. In this case, the amount of heat transfer fluid moving from the high-temperature reservoir tank 221 to the low-temperature reservoir tank 241 is limited, and because it first passes through the room-temperature middle tank 280, the temperature rise of the heat transfer fluid in the low-temperature reservoir tank 241 can be reduced, and the energy loss required to maintain a constant temperature can be reduced. In other words, since the room-temperature heat transfer fluid from the middle tank 280 flows into the low-temperature reservoir tank 241, the energy loss required to maintain a constant temperature can be reduced compared to when the high-temperature heat transfer fluid from the high-temperature reservoir tank 221 flows in.

[0056] [Differentiation 2] In the above embodiment, the lower limit level of reservoir tank 221 and the upper limit level of reservoir tank 241 are connected by piping 252. However, the position of the high-temperature side reservoir tank 221 may be shifted in the height direction and connected by horizontal piping. This embodiment will be described as Modification 2. Note that some of the configurations of the substrate processing apparatus and temperature control apparatus in Modification 2 are the same as in the above embodiment, so the description of the overlapping configurations and operations will be omitted.

[0057] Figure 9 shows an example of the configuration of the connecting pipes between tanks in Modification 2. As shown in Figure 9, in Modification 2, the position of reservoir tank 221 is shifted upward in the height direction to become reservoir tank 221a. That is, the top and bottom surfaces of reservoir tank 221a are higher than those of reservoir tank 241. Reservoir tank 221a and reservoir tank 241 are connected by a pipe 251, which is a connecting pipe for gas, and a pipe 252c, which is a connecting pipe for liquid (heat transfer medium). Pipe 251 connects the top side of reservoir tank 221a to the top side of reservoir tank 241.

[0058] The liquid level in reservoir tank 221a is maintained approximately in the middle of the appropriate control range when the heat transfer fluid from reservoir tank 221a is circulating to the lower electrode LE. Piping 252c is horizontally connected to reservoir tank 241 at the upper limit level of reservoir tank 221a. In the state shown in Figure 9, when the heat transfer fluid from reservoir tank 221a is circulating to the lower electrode LE, the heat transfer fluid does not move between reservoir tank 221a and reservoir tank 241 via piping 252c. That is, the heat transfer fluid in the high-temperature reservoir tank 221a and the heat transfer fluid in the low-temperature reservoir tank 241 do not mix, so the energy loss required to maintain the respective temperatures of each heat transfer fluid with a large temperature difference can be reduced.

[0059] Figure 10 shows an example of the change in liquid level during cooling in Modification 2. As shown in Figure 10, when the temperature of the lower electrode LE is cooled, the supply of the heat transfer medium from the low-temperature side is started via the piping 249, causing the liquid level in the reservoir tank 241 to drop. On the other hand, the liquid level in the reservoir tank 221a rises because the supply of the heat transfer medium from the high-temperature side is stopped. The heat transfer medium in the reservoir tank 221a moves to the reservoir tank 241 via the piping 252c only if it exceeds the upper limit level. Therefore, the liquid level in the reservoir tank 241 is maintained at the lower limit level, and the liquid level in the reservoir tank 221a does not significantly exceed the upper limit level. At this time, since the amount of heat transfer medium moving from the high-temperature side reservoir tank 221a to the low-temperature side reservoir tank 241 is limited, the temperature rise of the heat transfer medium in the low-temperature side reservoir tank 241 can be reduced, and the energy loss required to maintain a constant temperature can be reduced.

[0060] Subsequently, when the temperature of the lower electrode LE is raised, the heat transfer medium from the high-temperature side is supplied via the piping 229, causing the liquid level in reservoir tank 221a to drop. On the other hand, the liquid level in reservoir tank 241 rises because the supply of the heat transfer medium from the low-temperature side is stopped. In other words, when the heat transfer medium from reservoir tank 221a returns to circulating to the lower electrode LE, the liquid levels in both reservoir tank 221a and reservoir tank 241 will return to approximately the state shown in Figure 9.

[0061] [Difference 3] In the above embodiment, a temperature control device 20 of the type in which a heat transfer medium circulates within the circulation section 200 was described. However, a temperature control device of the type that switches between a first heat transfer medium and a second heat transfer medium in the flow path 15 within the lower electrode LE may also be used. This embodiment will be described as Modification 3. Note that some of the configurations of the substrate processing apparatus and temperature control device and the pressure control method in Modification 3 are the same as in the above embodiment, so the description of the overlapping configurations and operations will be omitted.

[0062] Figure 11 shows an example of a temperature control device in modified example 3. Compared to the temperature control device 20 in the above embodiment, the temperature control device 20a shown in Figure 11 has a switching unit 260, a first temperature control unit 220a, and a second temperature control unit 240a instead of a circulation unit 200, a first temperature control unit 220, and a second temperature control unit 240. The switching unit 260 also has valves 261 to 264, a temperature sensor 265, and piping 266 to 271.

[0063] The first temperature control unit 220a is connected to pipe 16a via pipe 272, pipe 266, and valve 261. The first temperature control unit 220a is also connected to pipe 16b via pipe 273, pipe 268, and valve 262. In modified example 3, the first temperature control unit 220a controls the temperature of the first heat transfer medium, which is on the high-temperature side. The first temperature control unit 220a supplies the temperature-controlled first heat transfer medium into the flow path 15 of the lower electrode LE via pipe 272, pipe 266, valve 261, and pipe 16a. The heat transfer medium supplied into the flow path 15 of the lower electrode LE is then returned to the first temperature control unit 220a via pipe 16b, valve 262, pipe 268, and pipe 273. The piping consisting of pipe 272, pipe 266, and pipe 16a is an example of a supply pipe or a first supply pipe. Furthermore, the piping consisting of pipe 16b, pipe 268, and pipe 273 is an example of a return pipe or a first return pipe.

[0064] The second temperature control unit 240a is connected to pipe 16a via pipe 274, pipe 269, and valve 261. The second temperature control unit 240a is also connected to pipe 16b via pipe 275, pipe 271, and valve 262. In modified example 3, the second temperature control unit 240a controls the temperature of the second heat transfer medium, which is on the lower temperature side. The second temperature control unit 240a supplies the temperature-controlled second heat transfer medium into the flow path 15 of the lower electrode LE via pipe 274, pipe 269, valve 261, and pipe 16a. The heat transfer medium supplied into the flow path 15 of the lower electrode LE is then returned to the second temperature control unit 240a via pipe 16b, valve 262, pipe 271, and pipe 275. The piping consisting of pipe 274, pipe 269, and pipe 16a is an example of a supply pipe or a second supply pipe. Furthermore, the piping consisting of pipe 16b, pipe 271, and pipe 275 is an example of a return pipe or a second return pipe.

[0065] Valve 261 is provided at the connection point between pipe 16a and pipes 266 and 269, and switches the heat transfer medium flowing through the flow path 15 of the lower electrode LE to either the first heat transfer medium or the second heat transfer medium. Valve 262 is provided at the connection point between pipe 16b and pipes 268 and 271, and switches the output destination of the heat transfer medium flowing out of the flow path 15 of the lower electrode LE to either the first temperature control unit 220a or the second temperature control unit 240a.

[0066] The connection point F between pipe 272 and pipe 266 and the connection point G between pipe 273 and pipe 268 are connected by a bypass pipe, pipe 267. A bypass valve 263 is provided in pipe 267.

[0067] The connection point H between pipe 274 and pipe 269 and the connection point I between pipe 275 and pipe 271 are connected by a bypass pipe, pipe 270. A bypass valve 264 is provided in pipe 270.

[0068] A temperature sensor 265 is provided in the piping 16a within the temperature control device 20a to measure the temperature at the inlet side of the flow path 15. The temperature sensor 265 may be located outside the temperature control device 20a. For example, the temperature sensor 265 may be located directly below the lower electrode LE, for example, at the connection point between the piping 16a and the flow path 15, or it may be located at an intermediate point between the lower electrode LE and the temperature control device 20a.

[0069] The opening and closing of valves 261, 262 and bypass valves 263, 264 are controlled by the control device 11, respectively. The first temperature control unit 220a and the second temperature control unit 240a are the same as the first temperature control unit 220 and the second temperature control unit 240 in the above embodiment, except that they do not have variable valves 227, 228 and variable valves 247, 248, so their description is omitted.

[0070] In the temperature control device 20a, when the first heat transfer medium on the high-temperature side is supplied into the flow path 15 of the lower electrode LE, valve 261 opens on the side of pipe 266 and closes on the side of pipe 269, and valve 262 opens on the side of pipe 268 and closes on the side of pipe 271. Also, bypass valve 263 is closed and bypass valve 264 is open. Therefore, the first heat transfer medium on the high-temperature side supplied from the first temperature control unit 220a is supplied into the flow path 15 of the lower electrode LE and returns to the first temperature control unit 220a, and the second heat transfer medium on the low-temperature side supplied from the second temperature control unit 240a returns to the second temperature control unit 240a via bypass valve 264.

[0071] On the other hand, in the temperature control device 20a, when the second heat transfer medium on the low-temperature side is supplied into the flow path 15 of the lower electrode LE, valve 261 closes on the pipe 266 side and opens on the pipe 269 side, and valve 262 closes on the pipe 268 side and opens on the pipe 271 side. Also, bypass valve 263 is open and bypass valve 264 is closed. Therefore, the second heat transfer medium on the low-temperature side supplied from the second temperature control unit 240a is supplied into the flow path 15 of the lower electrode LE and returns to the second temperature control unit 240a, and the first heat transfer medium on the high-temperature side supplied from the first temperature control unit 220a returns to the first temperature control unit 220a via bypass valve 263.

[0072] As shown in Figure 11, similar to the temperature control device 20, the high-temperature reservoir tank 221 and the low-temperature reservoir tank 241 are connected by a pipe 251, which is a communication pipe for gas, and a pipe 252, which is a communication pipe for liquid (heat transfer medium). Pipe 251 connects the top surface of reservoir tank 221 to the top surface of reservoir tank 241. Pipe 252 connects the lower limit level of reservoir tank 221 to the upper limit level of reservoir tank 241. Therefore, similar to the temperature control device 20, the temperature control device 20a prevents the heat transfer medium in the high-temperature reservoir tank 221 and the heat transfer medium in the low-temperature reservoir tank 241 from mixing, thus reducing energy loss in maintaining the respective temperatures of heat transfer mediums with large temperature differences. In the modified example 3, a middle tank 280 may also be provided, similar to the modified example 1.

[0073] As described above, according to this embodiment, the temperature control devices 20 and 20a include a first tank (reservoir tank 221) for storing a first heat transfer medium, a second tank (reservoir tank 241) for storing a second heat transfer medium at a different temperature from the first heat transfer medium, and a first connecting pipe (piping 252) that connects the upper limit of the liquid level in the first tank to the lower limit of the liquid level in the second tank. As a result, energy loss required to maintain the temperature of a heat transfer medium with a large temperature difference can be reduced.

[0074] Furthermore, according to this embodiment, the interiors of the first tank and the second tank each have a liquid portion and a gaseous portion, and a second connecting pipe (piping 251) is formed so that the gaseous portion inside the first tank and the gaseous portion inside the second tank are in communication with each other. As a result, the heat transfer medium can be moved smoothly between the tanks.

[0075] Furthermore, according to this embodiment, the second connecting pipe is installed at a position higher than the upper limit level in both the first and second tanks. As a result, gas can be moved between the tanks.

[0076] Furthermore, according to this embodiment, the second connecting pipe is provided between the top surface of the first tank and the top surface of the second tank. As a result, gas can be moved between the tanks.

[0077] Furthermore, according to Modification 1, the temperature control device 20 includes a first tank (reservoir tank 221) for storing a first heat transfer medium, a second tank (reservoir tank 241) for storing a second heat transfer medium at a different temperature from the first heat transfer medium, a third tank (middle tank 280) for storing a third heat transfer medium, a first connecting pipe (piping 252a) connecting the first tank and the third tank, and a second connecting pipe (piping 252b) connecting the second tank and the third tank. The first connecting pipe is a connecting pipe that connects the upper limit level of the liquid level in the first tank and the lower limit level of the liquid level in the third tank, or a connecting pipe that connects the lower limit level in the first tank and the upper limit level in the third tank. Furthermore, the second connecting pipe is a connecting pipe that connects the upper limit level in the second tank to the lower limit level in the third tank, or a connecting pipe that connects the lower limit level in the second tank to the upper limit level in the third tank. As a result, the energy loss required to maintain the temperature of the heat transfer medium with a large temperature difference can be reduced.

[0078] Furthermore, according to Modification 1, the bottom of the third tank is located higher than that of the first and second tanks. As a result, liquid level control via the third tank (middle tank 280) can be achieved with a minimum amount of liquid.

[0079] Furthermore, according to Modification 1, the third heat transfer medium is at room temperature. As a result, the energy loss required to maintain the temperature of a heat transfer medium with a large temperature difference can be reduced.

[0080] Furthermore, according to Modification 1, the third tank does not undergo temperature control. As a result, energy does not need to be consumed to maintain the temperature of the heat transfer medium stored in the third tank (middle tank 280).

[0081] Furthermore, according to Modification 1, the interiors of the first tank, the second tank, and the third tank each have a liquid portion and a gaseous portion, and there is a third connecting pipe (251a) formed so that the gaseous portion inside the first tank and the gaseous portion inside the third tank are in communication with each other, and a fourth connecting pipe (251b) formed so that the gaseous portion inside the second tank and the gaseous portion inside the third tank are in communication with each other. As a result, the heat transfer medium can be moved smoothly between the tanks.

[0082] Furthermore, according to Modification 1, the third connecting pipe is installed at a position higher than the upper limit level in the first and third tanks, respectively, and the fourth connecting pipe is installed at a position higher than the upper limit level in the second and third tanks, respectively. As a result, gas can be moved between the tanks.

[0083] Furthermore, according to Modification 1, the third connecting pipe is provided between the top surface of the first tank and the top surface of the third tank, and the fourth connecting pipe is provided between the top surface of the second tank and the top surface of the third tank. As a result, gas can be moved between the tanks.

[0084] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

[0085] Furthermore, although a capacitively coupled plasma (CCP) was used as an example of a plasma source in the above embodiment, the disclosed technology is not limited to this. As a plasma source, for example, inductively coupled plasma (ICP), microwave-excited surface wave plasma (SWP), electron cyclotron resonance plasma (ECP), or helicon wave-excited plasma (HWP) may be used.

[0086] Furthermore, although the above embodiment described a plasma etching apparatus as an example of the substrate processing apparatus 1, the disclosed technology is not limited to this. The disclosed technology can be applied to devices that control the temperature of a temperature-controlled object such as a wafer W using a temperature-controlled heat transfer medium, in addition to etching apparatuses, such as film deposition apparatuses, modification apparatuses, or cleaning apparatuses. [Explanation of symbols]

[0087] 1. Substrate processing apparatus 10 Main unit of the device 11 Control device 12 Processing container 15 channels 20,20a Temperature control device 200 Circulation section 220,220a First temperature control unit 221,241 Reservoir Tanks 240,240a Second temperature control unit 251,251a,251b,252,252a,252b Piping (communication pipe) 260 Switching section 280 Middle Tank ESC Electrostatic Chuck LE lower electrode PD mounting platform W wafer

Claims

1. a first tank that stores a first heat medium; a second tank for storing a second heat medium having a temperature different from that of the first heat medium; a first communication pipe connecting an upper limit level of the liquid level in the first tank and a lower limit level of the liquid level in the second tank; A temperature control device having:

2. the interiors of the first tank and the second tank each have a liquid portion and a gas portion, and a second communication pipe is formed so that the gas portion in the first tank and the gas portion in the second tank communicate with each other; The temperature control device according to claim 1 .

3. the second communicating pipe is provided at a position higher than the upper limit levels of the first tank and the second tank, The temperature control device according to claim 2 .

4. the second communicating pipe is provided between a top surface side of the first tank and a top surface side of the second tank; The temperature control device according to claim 3 .

5. a first tank that stores a first heat medium; a second tank for storing a second heat medium having a temperature different from that of the first heat medium; a third tank that stores a third heat medium; a first communication pipe connecting the first tank and the third tank; a second communication pipe connecting the second tank and the third tank, the first communicating pipe is a communicating pipe that connects an upper limit level of the liquid level in the first tank and a lower limit level of the liquid level in the third tank, or a communicating pipe that connects the lower limit level in the first tank and the upper limit level in the third tank, the second communicating pipe is a communicating pipe connecting the upper limit level in the second tank and the lower limit level in the third tank, or a communicating pipe connecting the lower limit level in the second tank and the upper limit level in the third tank. Temperature control device.

6. The third tank has a bottom surface located at a higher position than the first tank and the second tank. The temperature control device according to claim 5 .

7. The third heat medium is at room temperature. The temperature control device according to claim 5 or 6.

8. The third tank is not temperature controlled. The temperature control device according to any one of claims 5 to 7.

9. the interiors of the first tank, the second tank, and the third tank each have a liquid portion and a gas portion, and a third communicating pipe is formed so that the gas portion in the first tank and the gas portion in the third tank communicate with each other, and a fourth communicating pipe is formed so that the gas portion in the second tank and the gas portion in the third tank communicate with each other; The temperature control device according to any one of claims 5 to 8.

10. the third communicating pipe is provided at a position higher than the upper limit levels of the first tank and the third tank, and the fourth communicating pipe is provided at a position higher than the upper limit levels of the second tank and the third tank, The temperature control device according to claim 9 .

11. the third communicating pipe is provided between a top surface side of the first tank and a top surface side of the third tank, and the fourth communicating pipe is provided between a top surface side of the second tank and a top surface side of the third tank. The temperature control device according to claim 10.

12. A processing vessel; a mounting table disposed in the processing chamber and configured to mount a substrate thereon; a first temperature control unit that supplies the first heat medium from a first tank that stores the first heat medium to a flow path provided inside the mounting table via a first pipe; a second temperature control unit that supplies a second heat medium having a temperature different from that of the first heat medium from a second tank that stores the second heat medium to the flow path via a second pipe; a first communication pipe connecting an upper limit level of the liquid level in the first tank and a lower limit level of the liquid level in the second tank; A substrate processing apparatus having:

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