SPUTTERING APPARATUS AND METHOD FOR CONTROLLING SPUTTERING APPARATUS

Abstract

To provide a sputtering device and a control method of the sputtering device that improve controllability of an incident angle of sputtering particles and improve uniformity of a film.SOLUTION: A sputtering device includes a target to which sputtering particles are discharged, a substrate supporting part for supporting the substrate, a substrate moving mechanism for moving the substrate in one direction, and a shield member arranged between the target and the substrate support part and having an opening through which the sputtering particles pass. The shield member has a first shield member and a second shield member arranged vertically.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a sputtering apparatus and a method for controlling a sputtering apparatus. [Background technology]

[0002] 2. Description of the Related Art Sputtering devices are known that deposit a film by causing sputtered particles emitted from a target to be incident on a substrate such as a wafer.

[0003] Patent Document 1 discloses a sputtering apparatus comprising: a film formation chamber that houses a substrate held so that it can be transported horizontally; a sputter particle emission section that generates sputter particles by plasma from a pair of targets consisting of an upper target and a lower target that are arranged facing each other at an angle to the substrate, and emits the sputter particles from an opening toward the substrate that is transported from the upper target side to the lower target side; and a slit member that has a slit that selectively passes the sputter particles and is arranged between the substrate and the sputter particle emission section, wherein the slit member is characterized in that the slit opening end of the slit on the upstream side in the transport direction of the substrate is located within 50 mm upstream from the upstream opening end of the opening in the sputter particle emission section. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2010-20094 A Summary of the Invention [Problem to be solved by the invention]

[0005] In a sputtering apparatus in which sputtered particles are incident on a substrate at an angle, it is required to adjust the incident angle of the sputtered particles on the substrate.

[0006] One aspect of the present disclosure provides a sputtering apparatus and a method for controlling a sputtering apparatus that improves controllability of the incident angle of sputtered particles. [Means for solving the problem]

[0007] A sputtering apparatus according to one aspect of the present disclosure includes a target that emits sputter particles, a substrate support that supports a substrate, and a substrate supporting member that supports the substrate. Horizontal Primary Direction a substrate moving mechanism for moving the substrate to the a magnet disposed on the rear side of the target and reciprocating in a second direction that is horizontal and perpendicular to the first direction; a shielding member disposed between the target and the substrate support, the shielding member having an opening through which the sputtered particles pass, the shielding member having a first shielding member and a second shielding member disposed above and below the first shielding member; a drive unit that moves at least one of the first shielding member and the second shielding member in a moving direction of the substrate relative to the other shielding member; and a control unit that controls the drive unit, wherein the first shielding member has a first opening, the second shielding member is disposed below the first shielding member, and has a second opening having a protrusion, the opening of the shielding member being formed by the first opening and the second opening, the first opening of the first shielding member is formed such that an opening width in the first direction is narrow at a center in the second direction and wide at both end sides in the second direction, the second opening of the second shielding member has the protrusion formed at a center in the second direction at an edge on one side in the first direction, and no protrusion formed at an edge on the other side in the first direction, The control unit controls the driving unit based on the progress of consumption of the target. and causing the protrusion to protrude into the opening so that an opening width of the opening of the shielding member at a central portion in the second direction becomes narrower. . Effect of the Invention

[0008] According to one aspect of the present disclosure, it is possible to provide a sputtering apparatus and a method for controlling a sputtering apparatus that improve the controllability of the incident angle of sputtered particles. [Brief description of the drawings]

[0009] [Figure 1] FIG. 2 is a schematic cross-sectional view of an example of a substrate processing apparatus. [Diagram 2] FIG. 2 is a schematic cross-sectional view taken along line AA of the substrate processing apparatus; [Diagram 3] 3A and 3B are an example of a plan view and a cross-sectional view of a slit plate of the first embodiment. [Figure 4] FIG. 11 is a plan view of a first plate and a second plate according to a second embodiment. [Diagram 5] FIG. 11 is a plan view of a slit plate according to a second embodiment. [Figure 6] 1 is an example of a graph showing control of power supplied to a target and film thickness distribution. [Figure 7] FIG. 11 is a cross-sectional view of a slit plate according to a second embodiment. [Figure 8] FIG. 11 is a plan view of a first plate and a second plate according to a third embodiment. [Figure 9] FIG. 11 is a cross-sectional view of a slit plate according to a third embodiment. [Figure 10] FIG. 11 is a plan view of a slit plate according to a third embodiment. [Figure 11] FIG. 13 is a plan view of a first plate and a second plate according to a fourth embodiment. [Figure 12] 13A and 13B are an example of a plan view and a cross-sectional view of a slit plate according to a fourth embodiment. [Figure 13] 13A and 13B are an example of a plan view and a cross-sectional view of a slit plate according to a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0011] A substrate processing apparatus (sputtering apparatus) 1 will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is an example of a schematic cross-sectional view of the substrate processing apparatus 1. Fig. 2 is an example of a schematic cross-sectional view taken along line AA of the substrate processing apparatus 1. In the following description, a horizontal direction is defined as the X direction, a horizontal direction perpendicular to the X direction is defined as the Y direction, and a vertical direction is defined as the Z direction.

[0012] The substrate processing apparatus 1 includes a processing chamber 10, a shielding member 20, a sputter particle emitting part 30, a substrate supporting part 40, a substrate moving mechanism 50, and an exhaust device 60. The substrate processing apparatus 1 is, for example, a PVD (Physical Vapor Deposition) device, and is a sputtering device that causes sputter particles (film-forming atoms) emitted from the sputter particle emitting part 30 in the processing chamber 10 to adhere to a surface of a substrate W such as a semiconductor wafer placed on the substrate supporting part 40 to form a film.

[0013] The processing chamber 10 has a chamber body 10a with an open top and a lid 10b provided to cover the top opening of the chamber body 10a. The lid 10b has an inclined side surface. The inside of the processing chamber 10 is a processing space S where a film formation process is performed.

[0014] An exhaust port 11 is formed at the bottom of the processing chamber 10. An exhaust device 60 is connected to the exhaust port 11. The exhaust device 60 includes a pressure control valve and a vacuum pump. The processing space S is evacuated to a predetermined vacuum level by the exhaust device 60.

[0015] A gas inlet port 12 for introducing gas into the processing space S is inserted into the top of the processing chamber 10. A gas supply unit (not shown) is connected to the gas inlet port 12. A sputtering gas (e.g., an inert gas) supplied from the gas supply unit to the gas inlet port 12 is introduced into the processing space S.

[0016] A load / unload port 13 for loading and unloading the substrate W is formed in a side wall of the processing chamber 10. The load / unload port 13 is opened and closed by a gate valve 14. The processing chamber 10 is provided adjacent to a transfer chamber 80, and the processing chamber 10 and the transfer chamber 80 are communicated with each other by opening the gate valve 14. The transfer chamber 80 is maintained at a predetermined vacuum level, and a transfer device (not shown) for loading and unloading the substrate W into and from the processing chamber 10 is provided therein.

[0017] The shielding member 20 is configured as a substantially plate-shaped member and is disposed horizontally at the middle position in the height direction of the processing space S. The edge of the shielding member 20 is fixed to the side wall of the chamber body 10a. The shielding member 20 divides the processing space S into a first space S1 and a second space S2. The first space S1 is the space above the shielding member 20. The second space S2 is the space below the shielding member 20.

[0018] The shielding member 20 has a first plate 21 and a second plate 22. The first plate 21 has an opening (first opening) 210 for passing sputtered particles. The opening 210 penetrates the first plate 21 in the plate thickness direction (Z direction). The second plate 22 has an opening (second opening) 220 for passing sputtered particles. The opening 220 penetrates the second plate 22 in the plate thickness direction (Z direction). The first plate 21 and the second plate 22 are arranged so as to overlap vertically (Z direction). The opening 210 of the first plate 21 and the opening 220 of the second plate 22 form a slit portion (opening) 200 of the shielding member 20. The slit portion 200 is formed elongated with the Y direction, which is a horizontal direction in the figure, as the longitudinal direction. The length of the slit portion 200 in the Y direction is formed longer than the diameter of the substrate W. The shielding member 20 and the slit portion 200 will be described later with reference to FIG.

[0019] The substrate processing apparatus 1 further includes a drive unit 23 that drives (moves and / or rotates) the first plate 21, and a drive unit 24 that drives (moves and / or rotates) the second plate 22. The drive units 23 and 24 are controlled by a control unit 70. The drive units 23 and 24 will be described later with reference to FIG. 3 and the like.

[0020] The sputter particle emission section 30 includes a target 31, a target holder 32, an insulating member 33, a power supply , a magnet 35, and a magnet scanning mechanism .

[0021] The target 31 is made of a material containing the constituent elements of the film to be formed, and may be a conductive material or a dielectric material.

[0022] The target holder 32 is made of a conductive material, is disposed above the shielding member 20, and is attached to the inclined surface of the lid body 10b of the processing chamber 10 via an insulating member 33. In the example shown in Fig. 1, the target holder 32 is disposed on the inclined surface of the lid body 10b between the gate valve 14 and the slit portion 200, but this is not limiting, and the target holders 32 may be disposed at positions facing each other across the slit portion 200, or may be disposed at any position. The target holder 32 holds the target 31 so that the target 31 is positioned obliquely above the slit portion 200.

[0023] The power supplies 34 are each electrically connected to the target holder 32. The power supplies 34 may be DC power supplies when the targets 31 are made of a conductive material, and may be high-frequency power supplies when the targets 31 are made of a dielectric material. When the power supplies 34 are high-frequency power supplies, they are connected to the target holder 32 via a matching box. When a voltage is applied to the target holder 32, the sputtering gas dissociates around the target 31. Then, ions in the dissociated sputtering gas collide with the target 31, and sputtering particles, which are particles of the constituent material of the target 31, are emitted from the target 31.

[0024] The magnet 35 is disposed on the rear surface side of the target holder 32, and configured to be capable of reciprocating (oscillating) in the Y direction by a magnet scanning mechanism 36. The magnet scanning mechanism 36 has, for example, a guide 37 and a driving unit 38. The magnet 35 is guided by the guide 37 so as to be capable of reciprocating in the Y direction. The driving unit 38 reciprocates the magnet 35 along the guide 37.

[0025] Ions in the dissociated sputtering gas are attracted by the magnetic field of magnet 35 and collide with target 31. A magnet scanning mechanism 36 reciprocates magnet 35 in the Y direction, thereby changing the position at which the ions collide with target 31, in other words, the position at which sputter particles are emitted.

[0026] The substrate support part 40 is provided in the chamber body 10a of the processing chamber 10, and supports the substrate W horizontally via support pins 41. The substrate support part 40 is capable of being moved linearly in the X direction, which is one horizontal direction, by the substrate moving mechanism 50. Therefore, the substrate W supported by the substrate support part 40 is moved linearly within a horizontal plane by the substrate moving mechanism 50. The substrate moving mechanism 50 has a multi-joint arm part 51 and a drive part 52, and the substrate support part 40 can be moved in the X direction by driving the multi-joint arm part 51 by the drive part 52.

[0027] That is, the moving direction (Y direction) of the magnet 35 is perpendicular to the moving direction (X direction) of the substrate W. Moreover, the sputtered particle emitting part 30 is disposed on one side as viewed in the moving direction (X direction) of the substrate W.

[0028] The control unit 70 is made up of a computer and controls each component of the substrate processing apparatus 1, such as the drive units 23 and 24, the power supply 34, the drive units 38 and 52, and the exhaust unit 60. The control unit 70 has a main control unit made up of a CPU that actually controls these components, an input device, an output device, a display device, and a storage device. The storage device stores parameters for various processes performed by the substrate processing apparatus 1, and is also configured to hold a storage medium that stores a program for controlling the processes performed by the substrate processing apparatus 1, i.e., a processing recipe. The main control unit of the control unit 70 calls up a predetermined processing recipe stored in the storage medium, and causes the substrate processing apparatus 1 to perform a predetermined process based on the processing recipe.

[0029] Next, a film forming method in the substrate processing apparatus 1 will be described.

[0030] First, the processing space S in the processing chamber 10 is evacuated, and then a sputtering gas (eg, an inert gas) is introduced into the processing space S from the gas introduction port 12 and adjusted to a predetermined pressure.

[0031] Next, the substrate support part 40 is positioned at the substrate transfer position, the gate valve 14 is opened, and the substrate W is placed on the substrate support part 40 (on the support pins 41) by a transfer device (not shown) of the transfer chamber 80. Next, the transfer device is returned to the transfer chamber 80, and the gate valve 14 is closed.

[0032] Next, the control unit 70 controls the substrate moving mechanism 50 (drive unit 52) ​​to move the substrate W on the substrate support unit 40 in the X direction, and also controls the sputter particle emission unit 30 (power supply 34, drive unit 38) to emit sputter particles obliquely from the target 31.

[0033] Here, sputtered particles are emitted by applying a voltage from a power source 34 to the target holder 32, causing ions in the sputtering gas dissociated around the target 31 to collide with the target 31. In addition, the magnet scanning mechanism 36 causes the magnet 35 to reciprocate in the Y direction, thereby changing the position at which the ions collide with the target 31, in other words, the position at which the sputtered particles are emitted.

[0034] Sputtered particles emitted obliquely from target 31 of sputtered particle emission section 30 pass through slit section 200 formed in shielding member 20, are incident obliquely on substrate W, and are deposited on substrate W. By passing through slit section 200, the incident angle of the sputtered particles is limited, and a film with directionality can be formed.

[0035] For example, uneven portions such as trenches are formed on the surface of the substrate W. The substrate processing apparatus 1 performs film formation by emitting sputtering particles from the target 31 while moving the substrate W in the transport direction, and selectively forms a film on the corners of the convex portions of the substrate W from one direction. This allows selective film formation on the convex portions of the substrate W.

[0036] <Shielding member 20 of the first embodiment> Next, the shielding member 20 of the substrate processing apparatus 1 according to the first embodiment will be described with reference to FIG. 3. FIG. 3 is an example of a plan view and a cross-sectional view of the shielding member 20 of the first embodiment. Note that FIGS. 3(a), (c), and (e) are plan views of the shielding member 20 seen from above, and FIGS. 3(b), (d), and (f) are cross-sectional views of the shielding member 20. Also, FIGS. 3(a) and 3(b) show a state in which the slit portion 200 is open, FIGS. 3(c) and 3(d) show a state in which the slit portion 200 is half-open, and FIGS. 3(e) and 3(f) show a state in which the slit portion 200 is closed.

[0037] The shielding member 20 according to the first embodiment has a first plate (first shielding member) 21 and a second plate (second shielding member) 22. The first plate 21 has an elongated rectangular opening 210 with the Y direction as the longitudinal direction. The second plate 22 has an elongated rectangular opening 220 with the Y direction as the longitudinal direction.

[0038] Additionally, the driving unit 23 moves the first plate 21 in the X direction. That is, the first plate 21 moves in one axial direction (X direction). Additionally, the driving unit 24 moves the second plate 22 in the X direction. That is, the second plate 22 moves in one axial direction (X direction).

[0039] With this configuration, the substrate processing apparatus 1 can adjust the opening width of the slit portion 200 in the short direction (the transport direction of the substrate W, the X direction) by relatively moving the first plate 21 and the second plate 22, as shown in Figures 3(a)(b) and 3(c)(d). Also, by closing the slit portion 200, it can function as a shutter, as shown in Figures 3(e) and 3(f).

[0040] Moreover, the substrate processing apparatus 1 can change the distance in the X direction between the target 31 and the slit section 200 by moving the first plate 21 and the second plate 22 together. This makes it possible to adjust the incidence angle of sputtered particles that pass through the slit section 200 and are obliquely incident on the substrate W.

[0041] <Shielding member 20A of second embodiment> Next, the shielding member 20A of the substrate processing apparatus 1 according to the second embodiment will be described with reference to Fig. 4 to Fig. 7. Fig. 4 is an example of a plan view of the first plate 21A and the second plate 22A according to the second embodiment. Fig. 5 is an example of a plan view of the shielding member 20A according to the second embodiment.

[0042] The shielding member 20A according to the second embodiment includes a first plate ( 1 Shielding member 21A and a second plate ( 2 and a shielding member 22A.

[0043] As shown in Fig. 4(a), the first plate 21A has an elongated rectangular opening 210A with the Y direction as the longitudinal direction. In addition, protrusions 211A are formed at the center in the Y direction on both edges of the opening 210A in the X direction. The protrusions 211A are formed to protrude toward the opening 210A, thereby adjusting the opening shape (opening area) of the opening 210A. In other words, the opening width in the X direction of the opening 210A is formed to be narrow at the center in the Y direction and wide at both ends in the Y direction.

[0044] Here, the target 31 emits sputtered particles when ions attracted by the magnetic field of the reciprocating magnet 35 collide with the sputtering surface of the target 31. For this reason, the amount of sputtered particles emitted is greater at the center in the Y direction than at both ends in the Y direction. The first plate 21A has an opening 210A that is narrow at the center in the Y direction and wide at both ends in the Y direction, thereby adjusting the sputtered particles passing through the opening 210A and adjusting the thickness distribution of the film formed on the substrate W.

[0045] 4(b), a rectangular opening 220A extending in the X and Y directions is formed in the second plate 22A. A protruding portion 221A is formed in the center in the Y direction at one edge in the X direction of the opening 220A. The protruding portion 221A is formed so as to protrude toward the opening 220A.

[0046] Additionally, the driving unit 23 moves the first plate 21A in the X direction. That is, the first plate 21A moves in one axial direction (X direction). Additionally, the driving unit 24 moves the second plate 22A in the X direction. That is, the second plate 22A moves in one axial direction (X direction).

[0047] Fig. 5(a) shows a state in which the slit portion 200A of the shielding member 20A is opened, and Fig. 5(b) shows a state in which the second plate 22A has been moved.

[0048] 5(a), the protruding portion 221A is arranged so as to be hidden by the first plate 21 when viewed from the target 31. In other words, the protruding portion 221A is arranged so as not to block or to slightly block the slit portion 200A.

[0049] In FIG. 5(b), when viewed from the target 31, the protrusion 221A is disposed so as to protrude into the slit portion 200A and block a part of the slit portion 200A.

[0050] With this configuration, the substrate processing apparatus 1 can narrow the opening width from opening width L1 to opening width L2 at the center of the slit portion 200A in the Y direction, as shown in Figures 5(a) and 5(b), by moving the first plate 21A and the second plate 22A relative to each other.

[0051] Moreover, the substrate processing apparatus 1 can change the distance in the X direction between the target 31 and the slit portion 200A by moving the first plate 21A and the second plate 22A together. This makes it possible to adjust the incidence angle of sputtered particles that pass through the slit portion 200A and are obliquely incident on the substrate W.

[0052] Here, the thickness distribution of the film formed on the substrate by the sputtered particles will be described with reference to Figures 6 and 7. Figure 6 is an example of a graph showing the relationship between the power control supplied to the target 31 and the thickness distribution.

[0053] Fig. 6(a) shows a graph illustrating the control of power supplied to the target 31 and film thickness distribution in a reference example. In the reference example, the shape of the slit portion 200A is maintained in the state shown in Fig. 5(a). The dashed line indicates the power (DC power) supplied to the target 31, and the solid line indicates the film thickness distribution. The horizontal axis indicates the progress of wear (erosion) of the target 31 (hereinafter also referred to as target life).

[0054] Here, the target 31 emits sputtered particles as ions attracted by the magnetic field of the reciprocating magnet 35 collide with the sputtering surface of the target 31. For this reason, as the target life progresses (in other words, as the target 31 is consumed), the sputtering surface of the target 31 curves. This changes the emission direction of the sputtered particles, and the number of sputtered particles passing through the slit portion 200 and incident on the substrate W decreases. For this reason, the control unit 70 increases the power supplied from the power source 34 to the target 31 as the target life progresses so that the deposition rate of the sputtered particles becomes uniform (see the dashed line in FIG. 6(a)).

[0055] Furthermore, because the magnet 35 swings, the wear of the target 31 is not uniform on the sputtering surface of the target 31, and both ends of the target 31 in the Y direction (the swing direction of the magnet 35) wear away before the center. As a result, both ends become inclined surfaces, and the sputtered particles emitted from the target 31 and reaching the substrate W are lower at both ends in the Y direction than at the center in the Y direction. In other words, the thickness of the film formed on the substrate W by the sputtered particles is thicker in the center in the Y direction and thinner at both ends in the Y direction. As a result, the film thickness distribution on the substrate W increases (see the solid line in FIG. 6(a)), in other words, the uniformity of the film thickness decreases.

[0056] Fig. 6(b) is a graph showing the power control and film thickness distribution supplied to the target 31 in the second embodiment. The dashed line indicates the power (DC power), and the solid line indicates the film thickness distribution. Fig. 7 is an example of a cross-sectional view of the shielding member 20A in the second embodiment. Fig. 7(a) is an example of a cross-sectional view at a point S101 when the target life has progressed, Fig. 7(b) is an example of a cross-sectional view at a point S102 when the target life has progressed further, and Fig. 7(a) is an example of a cross-sectional view at a point S103 when the target life has progressed further.

[0057] At a point S101 when the target life has progressed, the opening shape of the shielding member 20A becomes as shown in FIG. 5(a).

[0058] At time S102 when the target life has progressed further, the opening shape of the shielding member 20A similarly becomes as shown in Fig. 5(a). Moreover, as the target life progresses, the control unit 70 increases the supplied power from the power at time S101 so that the deposition rate becomes uniform (see the dashed line in Fig. 6(b)).

[0059] At time S103 when the target life has progressed further, the opening shape of the shielding member 20A becomes as shown in Fig. 5(b). This allows the deposition rate at the center to be lowered to adjust the film thickness distribution (see the solid line in Fig. 6(b)). Furthermore, as the target life progresses, the control unit 70 further increases the supplied power from the power at time S102 so that the deposition rate becomes uniform (see the dashed line in Fig. 6(b)).

[0060] With this configuration, the substrate processing apparatus 1 moves the second plate 22A in accordance with the progress of the target life. In other words, the protrusion 221A is protruded into the slit portion 200A as viewed from the target 31. This makes it possible to suppress an increase in film thickness distribution due to the progress of the target life (see the solid line in FIG. 6(b)). In other words, it is possible to improve the uniformity of the film thickness.

[0061] In the above description, the control unit 70 moves the second plate 22A in accordance with the progress of the target life, but the present invention is not limited to this. The control unit 70 may also move the second plate 22A based on at least one of the power (DC power) supplied to the target 31, the discharge voltage, the current value, and the cathode cooling water temperature. As described above, the control unit 70 increases the power, discharge voltage, and current value supplied from the power source 34 to the target 31 as the target life progresses. In addition, the increase in the power supplied to the target 31 increases the temperature of the target 31, and the temperature of the cooling water that has cooled the cathode of the sputter particle emission unit 30 also increases. In addition, the torque of the motor of the magnet scanning mechanism changes as the target life progresses. For this reason, by moving the second plate 22A based on at least one of the power supplied to the target 31, the discharge voltage, the current value, the cathode cooling water temperature, and the motor torque of the magnet scanning mechanism, control can be performed in the same manner as when the second plate 22A is moved in accordance with the progress of the target life.

[0062] In addition, although the description has been given of narrowing the opening width at the center in the Y direction by moving the second plate 22A, this is not limited thereto. The opening width at both ends in the Y direction may be expanded by moving the second plate 22A.

[0063] <Shielding member 20B according to the third embodiment> Next, the shielding member 20B of the substrate processing apparatus 1 according to the third embodiment will be described with reference to Fig. 8 to Fig. 10. Fig. 8 is an example of a plan view of the first plate 21B and the second plate 22B according to the third embodiment. Fig. 9 is an example of a cross-sectional view of the shielding member 20B according to the third embodiment. Fig. 10 is an example of a plan view of the shielding member 20B according to the third embodiment.

[0064] The shielding member 20B according to the third embodiment has a first plate (first shielding member) 21B and a second plate (second shielding member) 22B.

[0065] 8(a), an opening 210B having a long and narrow rectangular shape with the Y direction as its longitudinal direction is formed in the first plate 21B. In addition, a protrusion 211B is formed in the center in the Y direction on both edges of the opening 210B in the X direction. The protrusion 211B is formed so as to protrude toward the opening 210B.

[0066] As shown in FIG. 8(b), the second plate 22B is formed with an elongated rectangular opening 220B with its longitudinal direction aligned in the Y direction.

[0067] Additionally, the driving unit 23 moves the first plate 21B in the X direction and the Z direction (directions to move the plates closer or farther apart). That is, the first plate 21B moves in multiple axial directions (X direction and Z direction). Additionally, the driving unit 24 moves the second plate 22B in the X direction. That is, the second plate 22B moves in one axial direction (X direction).

[0068] Fig. 9(a) shows a state in which the first plate 21B is brought closer to the second plate 22B, in other words, the first plate 21B is lowered. Fig. 9(b) shows a state in which the first plate 21B is moved away from the second plate 22B, in other words, the first plate 21B is raised. Fig. 10(a) shows the shielding member 20B as seen from the target 31 in the state of Fig. 9(a). Fig. 10(b) shows the shielding member 20B as seen from the target 31 in the state of Fig. 9(b).

[0069] With this configuration, the substrate processing apparatus 1 moves the first plate 21B away from the second plate 22B, thereby expanding the protruding portion 211B as seen from the target 31. As a result, as shown in Figs. 10(a) and 10(b), the opening width can be narrowed from the opening width L1 to the opening width L2 at the center of the slit portion 200B in the Y direction. Also, the substrate processing apparatus 1 moves the first plate 21B closer to the second plate 22B, thereby reducing the protruding portion 211B as seen from the target 31. As a result, as shown in Figs. 10(a) and 10(b), the opening width can be expanded from the opening width L2 to the opening width L1 at the center of the slit portion 200B in the Y direction.

[0070] Moreover, the substrate processing apparatus 1 can change the distance in the X direction between the target 31 and the slit portion 200B by moving the first plate 21B and the second plate 22B together. This makes it possible to adjust the incidence angle of sputtered particles that pass through the slit portion 200B and are obliquely incident on the substrate W.

[0071] Furthermore, the control unit 70 may raise the first plate 21B in accordance with the progress of the target life. This makes it possible to suppress an increase in the film thickness distribution due to the progress of the target life. In other words, it is possible to improve the uniformity of the film thickness.

[0072] <Shielding member 20C of the fourth embodiment> Next, the shielding member 20C of the substrate processing apparatus 1 according to the fourth embodiment will be described with reference to Figs. 11 to 13. Fig. 11 is an example of a plan view of the first plate 21C and the second plate 22C according to the fourth embodiment. Fig. 12 is an example of a plan view and a cross-sectional view of the shielding member 20C according to the fourth embodiment. Fig. 13 is an example of a plan view and a cross-sectional view of the shielding member 20C according to the fourth embodiment. In Figs. 11 to 13, the surface of the second plate 22C is clearly indicated by dot hatching.

[0073] A shielding member 20C according to the fourth embodiment has a first plate (first shielding member) 21C and a second plate (second shielding member) 22C.

[0074] 11(a), an opening 210C having a generally rectangular shape and elongated with the Y direction as its longitudinal direction is formed in the first plate 21C. A protrusion 211C is formed in the center of the opening 210C in the Y direction at one edge in the X direction. The protrusion 211C is formed to protrude toward the opening 210C, thereby adjusting the opening shape (opening area) of the opening 210C. In other words, the opening width in the X direction of the opening 210C is formed so that it is narrow in the center in the Y direction and wide on the outer sides in the Y direction.

[0075] 11(b), an opening 220C having an elongated elliptical shape with its longitudinal direction aligned with the Y direction is formed in the second plate 22C. The opening 220C is formed at a position shifted from the rotation center of the second plate 22B.

[0076] Additionally, the driving unit 23 moves and rotates the first plate 21C in the X direction. That is, the first plate 21C moves and rotates in one axial direction (X direction). Additionally, the driving unit 24 rotates the second plate 22C. That is, the second plate 22C rotates.

[0077] 12(a) and 12(b) show a first state of the shielding member 20C. In the first state, the second plate 22C is rotated and the opening 220C is disposed on the side farther from the target 31. This makes it possible to limit the incidence angle of the sputtered particles to a low incidence angle. Also, the first plate 21 is disposed in a position where the protrusion 211C does not block the sputtered particles passing through the opening 220C.

[0078] 12(c) and 12(d) show a second state of the shielding member 20C. In the second state, the first plate 21 is moved (see the outline arrow) and the first plate 21 is disposed at a position where the protrusion 211C blocks a part of the sputtered particles passing through the opening 220C. This allows the protrusion 211C to hide the center of the slit portion 200C in the Y direction, thereby adjusting the film thickness distribution.

[0079] 13(a) and 13(b) show a third state of the shielding member 20C. In the third state, the second plate 22C is rotated and the opening 220C is disposed on the side closer to the target 31. This makes it possible to limit the incidence angle of the sputtered particles to a high incidence angle. Also, the first plate 21 is disposed in a position where the protrusion 211C does not block the sputtered particles passing through the opening 220C.

[0080] 13(c) and 13(d) show a fourth state of the shielding member 20C. In the fourth state, the first plate 21 is moved (see the outline arrow) and the first plate 21 is disposed at a position where the protrusion 211C blocks a part of the sputtered particles passing through the opening 220C. This allows the protrusion 211C to hide the center of the slit portion 200C in the Y direction, and the film thickness distribution can be adjusted.

[0081] That is, by rotating the second plate 22C, the incident angle of the sputtered particles can be controlled to a low incident angle (see FIG. 12) or a high incident angle (see FIG. 13). By moving the first plate 21C, the protrusion 211C hides the center of the slit portion 200C in the Y direction, and the film thickness distribution can be adjusted.

[0082] The substrate processing apparatus 1 has been described above, but the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0083] 1. Substrate processing equipment (sputtering equipment) 10 Processing chamber 20 Shielding material 21 first plate (first shielding member) 22 second plate (second shielding member) 23,24 Drive unit 200 Slit section (opening) 210 Opening (First Opening) 220 Opening (Second Opening) 30 Sputter particle emission part 31 Target 32 Target Holder 33 Insulating materials 34 Power supply 35 Magnet 36 Magnet Scanning Mechanism 37 Guide 38 Drive unit 40 Substrate support 50 Substrate moving mechanism 60 Exhaust system 70 Control section 80 Transfer chamber W substrate S Processing space S1 1st space S2 2nd space

Claims

1. A target that emits sputter particles; a substrate support portion that supports a substrate; a substrate moving mechanism for moving the substrate in a horizontal first direction; a magnet disposed on the rear side of the target and reciprocating in a second direction that is horizontal and perpendicular to the first direction; a shielding member disposed between the target and the substrate support, the shielding member having an opening through which the sputtered particles pass, and including a first shielding member and a second shielding member disposed above and below the first shielding member; a drive unit that moves at least one of the first shielding member and the second shielding member in a movement direction of the substrate relative to the other shielding member; A control unit that controls the drive unit, The first shielding member has a first opening, the second shielding member is disposed below the first shielding member and has a second opening having a protrusion; the opening of the shielding member is formed by the first opening and the second opening, The first opening of the first shielding member is The opening width in the first direction is narrower at a center portion in the second direction and wider at both ends in the second direction, The second opening of the second shielding member is the protrusion is formed at a center portion in the second direction of an edge on one side in the first direction, The protrusion is not formed on the edge on the other side in the first direction, The control unit is based on a progress of consumption of the target, the driving unit is controlled to cause the protrusion to protrude into the opening of the shielding member such that an opening width at a central portion of the opening in the second direction becomes narrower; Sputtering equipment.

2. A target that emits sputter particles; a substrate support portion that supports a substrate; a substrate moving mechanism that moves the substrate support unit, on which the substrate is supported, in a horizontal first direction when the sputtered particles emitted from the target are incident on the substrate to form a film; a magnet disposed on the rear side of the target and reciprocating in a second direction that is horizontal and perpendicular to the first direction; a shielding member disposed between the target and the substrate support, the shielding member having an opening through which the sputtered particles pass, and including a first shielding member and a second shielding member disposed above and below the first shielding member; a drive unit that moves at least one of the first shielding member and the second shielding member in a movement direction of the substrate relative to the other shielding member; A control unit that controls the drive unit, The first shielding member has a first opening, the second shielding member is disposed below the first shielding member and has a second opening having a protrusion; the opening of the shielding member is formed by the first opening and the second opening, The control unit is When the consumption of the target progresses, the driving unit is controlled to make the protrusion protrude into the opening so that an opening width of the opening of the shielding member at a central portion in the second direction becomes narrower. Sputtering equipment.

3. The first opening of the first shielding member is The opening width in the first direction is narrower at a center portion in the second direction and wider at both end portions in the second direction, The second opening of the second shielding member is the protrusion is formed at a center portion in the second direction of an edge on one side in the first direction, The protrusion is not formed on the edge on the other side in the first direction. The sputtering apparatus according to claim 2 .

4. The control unit is controlling the driving unit based on at least one of the power supplied to the target, a discharge voltage, a current value, a cathode cooling water temperature, and a motor torque of a magnet scanning mechanism; The sputtering apparatus according to any one of claims 1 to 3.

5. The control unit is The drive unit is controlled to close the opening of the shielding member. The sputtering apparatus according to any one of claims 1 to 4.

6. The drive unit is moving at least one of the first shielding member and the second shielding member in a direction away from or toward the other shielding member; The sputtering apparatus according to any one of claims 1 to 5.

7. The drive unit is rotating at least one of the first shielding member and the second shielding member; The sputtering apparatus according to any one of claims 1 to 6.

8. A target that emits sputter particles; a substrate support portion that supports a substrate; a substrate moving mechanism for moving the substrate in a horizontal first direction; a magnet disposed on the rear side of the target and reciprocating in a second direction that is horizontal and perpendicular to the first direction; a shielding member disposed between the target and the substrate support, the shielding member having an opening through which the sputtered particles pass, and including a first shielding member and a second shielding member disposed above and below the first shielding member; a drive unit that moves at least one of the first shielding member and the second shielding member in a movement direction of the substrate relative to the other shielding member, The first shielding member has a first opening, the second shielding member is disposed below the first shielding member and has a second opening having a protrusion; the opening of the shielding member is formed by the first opening and the second opening, The first opening of the first shielding member is The opening width in the first direction is narrower at a center portion in the second direction and wider at both end portions in the second direction, The second opening of the second shielding member is the protrusion is formed at a center portion in the second direction of an edge on one side in the first direction, The protrusion is not formed on the edge on the other side in the first direction, based on a progress of consumption of the target, the driving unit is controlled to cause the protrusion to protrude into the opening of the shielding member such that an opening width at a central portion of the opening in the second direction becomes narrower; A method for controlling a sputtering apparatus.

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