SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Abstract

To sufficiently remove objects to be removed on a substrate.SOLUTION: A substrate processing device (100) comprises: a substrate holding and rotating mechanism (110) that holds a substrate (W) horizontally and rotates the substrate (W); a processing liquid supply part (130) that supplies processing liquid having a magnetic component to the substrate (W); a peel-off liquid supply part (140) that supplies peel-off liquid to the substrate (W) formed with a processing film obtained by solidifying or hardening the processing liquid; a magnetic force application part (150) that applies a magnetic force to the substrate supplied with the peel-off liquid; and a rinse liquid supply part (172) that supplies rinse liquid to the substrate (W) to remove the processing film and the peel-off liquid from the substrate (W) after the magnetic force application part (150) applied the magnetic force to the substrate (W).SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] 2. Description of the Related Art Substrate processing apparatuses for processing substrates are known. Substrate processing apparatuses are preferably used for processing semiconductor substrates. Typically, substrate processing apparatuses process substrates using a processing liquid such as a chemical liquid.

[0003] When processing a substrate, if particles remain on the substrate, the characteristics of the substrate may be affected. For this reason, the use of a mixed fluid to remove particles on the substrate has been considered (see Patent Document 1). In the substrate processing method of Patent Document 1, a two-fluid nozzle mixes pressurized gas and a chemical liquid to form a mist, which is then ejected onto the substrate to remove particles on the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2009-59876 A Summary of the Invention [Problem to be solved by the invention]

[0005] In recent years, fine processing of substrates has progressed more and more, and the size of particles has tended to become smaller. However, the substrate processing method of Patent Document 1 may not be able to sufficiently remove the particles to be removed.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of sufficiently removing a target object on a substrate. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate holding and rotating mechanism is provided which holds a substrate in a horizontal direction and rotates the substrate, a processing liquid supply unit which supplies a processing liquid having a magnetic component to the substrate held by the substrate holding and rotating mechanism, a stripping liquid supply unit which supplies a stripping liquid to the substrate on which a processing film formed by solidifying or curing the processing liquid has been formed, a magnetic force application unit which applies a magnetic force to the substrate to which the stripping liquid has been supplied, a rinsing liquid supply unit which supplies a rinsing liquid to the substrate to remove the processing film and the stripping liquid from the substrate after the magnetic force application unit has applied the magnetic force to the substrate, and a control unit which controls the substrate holding and rotating mechanism, the processing liquid supply unit, the stripping liquid supply unit, the magnetic force application unit, and the rinsing liquid supply unit.

[0008] In one embodiment, the processing liquid supply unit supplies a mixture containing the magnetic component, a solute, and a solvent as the processing liquid to the substrate.

[0009] In one embodiment, the magnetic force application unit includes a magnetic force generator that generates a magnetic force and a moving mechanism that moves the magnetic force generator, and the control unit controls the stripping solution supply unit and the moving mechanism so that the magnetic force generator approaches the substrate while the stripping solution supply unit supplies the stripping solution to the substrate.

[0010] In one embodiment, the processing liquid supply unit includes a first processing liquid supply unit that supplies a first processing liquid to the substrate, and a second processing liquid supply unit that supplies a second processing liquid different from the first processing liquid to the substrate after the first processing liquid supply unit has supplied the first processing liquid to the substrate.

[0011] In one embodiment, the first processing liquid supply unit supplies a mixture including a first magnetic component, a first solute, and a first solvent as the first processing liquid to the substrate, and the second processing liquid supply unit supplies a mixture including a second magnetic component, a second solute, and a second solvent as the second processing liquid to the substrate, and a mass ratio of the first magnetic component to the first processing liquid is greater than a mass ratio of the second magnetic component to the second processing liquid.

[0012] According to another aspect of the present invention, a substrate processing method includes a substrate holding step of holding a substrate in a horizontal direction, a substrate rotating step of rotating the substrate, a processing liquid supplying step of supplying a processing liquid having a magnetic component to the substrate, a stripping liquid supplying step of supplying a stripping liquid to the substrate on which a processing film has been formed by solidifying or curing the processing liquid supplied in the processing liquid supplying step, a magnetic force application step of applying a magnetic force to the substrate to which the stripping liquid has been supplied in the stripping liquid supplying step, and a rinsing liquid supplying step of removing the processing film and the stripping liquid from the substrate by supplying a rinsing liquid to the substrate after the magnetic force application step.

[0013] In one embodiment, in the treatment liquid supplying step, a mixture containing the magnetic component, a solute, and a solvent is supplied to the substrate as the treatment liquid.

[0014] In one embodiment, the magnetic force applying step includes bringing a magnetic force generator close to the substrate while the stripping liquid is being supplied to the substrate in the stripping liquid supplying step.

[0015] In one embodiment, the processing liquid supply process includes a first processing liquid supply process of supplying a first processing liquid to the substrate, and a second processing liquid supply process of supplying a second processing liquid different from the first processing liquid to the substrate after the first processing liquid is supplied to the substrate in the first processing liquid supply process.

[0016] In one embodiment, in the first processing liquid supplying process, the first processing liquid includes a first magnetic component, a first solute, and a first solvent, and in the second processing liquid supplying process, the second processing liquid includes a second magnetic component, a second solute, and a second solvent, and the mass ratio of the first magnetic component to the first processing liquid is greater than the mass ratio of the second magnetic component to the second processing liquid. Effect of the Invention

[0017] According to the present invention, the object to be removed on the substrate can be sufficiently removed. [Brief description of the drawings]

[0018] [Figure 1] 1 is a schematic diagram of a substrate processing system including a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Diagram 3] 1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4] FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment. [Diagram 5] 1(a) to 1(f) are schematic views for explaining the substrate processing method of the present embodiment. [Figure 6] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 7] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 8] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 9] FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment. [Figure 10] 1(a) to 1(e) are schematic views for explaining the substrate processing method of the present embodiment. [Figure 11] 1(a) to 1(c) are schematic views for explaining the substrate processing method of the present embodiment. [Figure 12] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 13] FIG. 2 is a flow diagram of the substrate processing apparatus according to the present embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] Hereinafter, an embodiment of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference symbols and will not be described repeatedly. In this specification, to facilitate understanding of the invention, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other may be described. Typically, the X-axis and the Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0020] First, a substrate processing system 10 including a substrate processing apparatus 100 according to the present embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic plan view of the substrate processing system 10.

[0021] 1, the substrate processing system 10 includes a plurality of substrate processing apparatuses 100. The substrate processing apparatuses 100 process substrates W. The substrate processing apparatuses 100 process the substrates W by performing at least one of etching, surface processing, imparting properties, forming a processing film, removing at least a portion of a film, and cleaning.

[0022] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0023] 1, the substrate processing system 10 includes, in addition to the multiple substrate processing apparatuses 100, a fluid cabinet 10A, a fluid box 10B, multiple load ports LP, an indexer robot IR, a center robot CR, and a controller 20. The controller 20 controls the load ports LP, the indexer robot IR, the center robot CR, and the substrate processing apparatuses 100.

[0024] Each of the load ports LP accommodates a plurality of substrates W in a stacked manner. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the substrate W may be indirectly transferred between the indexer robot IR and the center robot CR via the placement stage. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing apparatus 100. Each of the substrate processing apparatuses 100 discharges liquid onto the substrate W to process the substrate W. The liquid includes a processing liquid and a rinsing liquid. Alternatively, the liquid may include other liquids. The fluid cabinet 10A accommodates a liquid. Note that the fluid cabinet 10A may accommodate a gas.

[0025] The substrate processing apparatuses 100 form a plurality of towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes a plurality of substrate processing apparatuses 100 (three substrate processing apparatuses 100 in FIG. 1) stacked vertically. Each fluid box 10B corresponds to a plurality of towers TW. The liquid in the fluid cabinet 10A is supplied to all the substrate processing apparatuses 100 included in the tower TW corresponding to the fluid box 10B via any of the fluid boxes 10B. Also, the gas in the fluid cabinet 10A is supplied to all the substrate processing apparatuses 100 included in the tower TW corresponding to the fluid box 10B via any of the fluid boxes 10B.

[0026] The control device 20 controls various operations of the substrate processing system 10. The control device 20 includes a control unit 22 and a storage unit 24. The control unit 22 has a processor. The control unit 22 has, for example, a central processing unit (CPU). Alternatively, the control unit 22 may have a general-purpose computer.

[0027] The storage unit 24 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 24 may include removable media. The control unit 22 executes a computer program stored in the storage unit 24 to perform a substrate processing operation.

[0028] The storage unit 24 also stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0029] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing apparatus 100.

[0030] The substrate processing apparatus 100 includes a chamber 110, a substrate holding and rotating mechanism 120, a processing liquid supply unit 130, a stripping liquid supply unit 140, and a magnetic force application unit 150. The chamber 110 accommodates a substrate W. The chamber 110 also accommodates the substrate holding and rotating mechanism 120, and at least a portion of the processing liquid supply unit 130, the stripping liquid supply unit 140, and the magnetic force application unit 150.

[0031] The chamber 110 has a generally box-like shape with an internal space. The chamber 110 accommodates the substrate W. Here, the substrate processing apparatus 100 is a single-wafer type that processes the substrates W one by one, and the chamber 110 accommodates the substrates W one by one. The substrate W is accommodated in the chamber 110 and is processed in the chamber 110.

[0032] The substrate holding and rotating mechanism 120 holds the substrate W in a horizontal direction. The substrate holding and rotating mechanism 120 holds the substrate W horizontally so that the upper surface (front surface) Wa of the substrate W faces upward and the back surface (bottom surface) Wb of the substrate W faces vertically downward. The substrate holding and rotating mechanism 120 rotates the substrate W while holding it. The upper surface Wa of the substrate W may be flattened. Alternatively, the upper surface Wa of the substrate W may be provided with lines and spaces, or may have a pillar-shaped laminated structure with a recess. The substrate holding and rotating mechanism 120 rotates the substrate W while holding it.

[0033] For example, the substrate holding and rotating mechanism 120 may be a clamping type that clamps an end of the substrate W. Alternatively, the substrate holding and rotating mechanism 120 may have any mechanism that holds the substrate W from its back surface Wb. For example, the substrate holding and rotating mechanism 120 may be a vacuum type. In this case, the substrate holding and rotating mechanism 120 holds the substrate W horizontally by adsorbing the central portion of the back surface Wb of the substrate W, which is a non-device forming surface, to its upper surface. Alternatively, the substrate holding and rotating mechanism 120 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral end surface of the substrate W and a vacuum type.

[0034] For example, the substrate holding and rotating mechanism 120 includes a spin base 121, a chuck member 122, a shaft 123, an electric motor 124, and a housing 125. The chuck member 122 is provided on the spin base 121. The chuck member 122 chucks the substrate W. Typically, the spin base 121 is provided with a plurality of chuck members 122.

[0035] The shaft 123 is a hollow shaft. The shaft 123 extends vertically along the rotation axis Ax. The spin base 121 is coupled to the upper end of the shaft 123. The substrate W is placed above the spin base 121.

[0036] The spin base 121 is disk-shaped. The chuck member 122 horizontally supports the substrate W. The shaft 123 extends downward from the center of the spin base 121. The electric motor 124 applies a rotational force to the shaft 123. The electric motor 124 rotates the shaft 123 in a rotational direction, thereby rotating the substrate W and the spin base 121 around the rotation axis Ax. The housing 125 surrounds the shaft 123 and the electric motor 124.

[0037] The processing liquid supply unit 130 supplies the processing liquid to the substrate W. Typically, the processing liquid supply unit 130 supplies the processing liquid to the upper surface Wa of the substrate W held by the substrate holding and rotating mechanism 120.

[0038] The processing liquid includes a solute, a solvent, and a magnetic component. The processing liquid is a mixture including a solute, a solvent, and a magnetic component. The processing liquid solidifies or hardens as at least a portion of the solvent volatilizes (evaporates). The processing liquid solidifies or hardens on the substrate W to form a solid processing film that holds the object to be removed present on the substrate W.

[0039] Here, "solidification" refers to the solidification of a solute due to forces acting between molecules or atoms, for example, as a solvent evaporates. "Hardening" refers to the solidification of a solute due to chemical changes, such as polymerization or crosslinking. Therefore, "solidification or hardening" refers to the "solidification" of a solute due to various factors.

[0040] As the solute, a synthetic resin may be used. Examples of the synthetic resin used as the solute include acrylic resin, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamide, polyacetal, polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyether ether ketone, polyamide imide, etc.

[0041] The solvent preferably contains an organic solvent. The solvent is volatile. Volatile means that it is more volatile than water. The solvent preferably has a boiling point of 50 to 200°C at 1 atmospheric pressure. The solvent is allowed to contain a small amount of pure water. The amount of pure water contained in the solvent is preferably 30 mass% or less compared to the entire solvent. A preferred embodiment is one in which no pure water is contained (0 mass%). The pure water is preferably DIW.

[0042] Examples of organic solvents include alcohols such as isopropanol (IPA), ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether, ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate, propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether (PGEE), propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monoethyl ether acetate, lactate esters such as methyl lactate and ethyl lactate (EL), aromatic hydrocarbons such as toluene and xylene, ketones such as methyl ethyl ketone, 2-heptanone, and cyclohexanone, amides such as N,N-dimethylacetamide and N-methylpyrrolidone, and lactones such as γ-butyrolactone. These organic solvents can be used alone or in combination of two or more.

[0043] In a preferred embodiment, the organic solvent is selected from IPA, PGME, PGEE, EL, PGMEA, and any combination thereof. When two types of organic solvents are used in combination, the volume ratio is preferably 20:80 to 80:20. The solvent is present in an amount of 0.1 to 99.9% by mass relative to the total mass of the treatment liquid.

[0044] The magnetic component has magnetic properties. Typically, the magnetic component exhibits ferromagnetism. The magnetic component is a magnetic powder. Examples of the magnetic component include iron, nickel, alloys thereof, and ferrite (Fe3O4). The magnetic component does not need to be dissolved in the solvent.

[0045] The processing liquid supply unit 130 includes a pipe 132, a valve 134, a nozzle 136, and a moving mechanism 138. The processing liquid is supplied to the pipe 132 from a supply source. The valve 134 opens and closes a flow path in the pipe 132. The nozzle 136 is connected to the pipe 132. The nozzle 136 ejects the processing liquid onto an upper surface Wa of the substrate W. The nozzle 136 is preferably configured to be movable relative to the substrate W.

[0046] The movement mechanism 138 moves the nozzle 136 in the horizontal and vertical directions. Specifically, the movement mechanism 138 moves the nozzle 136 in the circumferential direction around a rotation axis that extends in the vertical direction. The movement mechanism 138 also raises and lowers the nozzle 136 in the vertical direction.

[0047] The moving mechanism 138 has an arm 138a, a shaft 138b, and a drive unit 138c. The arm 138a extends along the horizontal direction. The nozzle 136 is disposed at the tip of the arm 138a. The nozzle 136 is disposed at the tip of the arm 138a in a position that allows the nozzle 136 to supply a processing liquid toward the upper surface Wa of the substrate W held by the chuck member 122. More specifically, the nozzle 136 is coupled to the tip of the arm 138a and protrudes downward from the arm 138a. The base end of the arm 138a is coupled to the shaft 138b. The shaft 138b extends along the vertical direction.

[0048] The driving unit 138c has a rotation driving mechanism and an elevation driving mechanism. The rotation driving mechanism of the driving unit 138c rotates the shaft portion 138b about the rotation axis, and rotates the arm 138a along the horizontal plane about the shaft portion 138b. As a result, the nozzle 136 moves along the horizontal plane. More specifically, the nozzle 136 moves in the circumferential direction around the shaft portion 138b. The rotation driving mechanism of the driving unit 138c includes, for example, a motor capable of forward and reverse rotation.

[0049] The lifting drive mechanism of the drive unit 138c raises and lowers the shaft unit 138b in the vertical direction. The lifting drive mechanism of the drive unit 138c raises and lowers the shaft unit 138b, thereby raising and lowering the nozzle 136 in the vertical direction. The lifting drive mechanism of the drive unit 138c has a drive source such as a motor and a lifting mechanism, and the drive source drives the lifting mechanism to raise or lower the shaft unit 138b. The lifting mechanism includes, for example, a rack and pinion mechanism or a ball screw.

[0050] Typically, while the processing liquid supply unit 130 supplies the processing liquid to the substrate W, the substrate holding and rotating mechanism 120 holds and rotates the substrate W. Therefore, the processing liquid supplied to the substrate W from the processing liquid supply unit 130 flows radially outward on the substrate W.

[0051] The speed at which the processing liquid flows radially outward on the substrate W can be controlled by the substrate holding and rotating mechanism 120. By increasing the rotation speed of the substrate W by the substrate holding and rotating mechanism 120, the speed at which the processing liquid flows radially outward on the substrate W can be increased. Also, by decreasing the rotation speed of the substrate W by the substrate holding and rotating mechanism 120, the speed at which the processing liquid flows radially outward on the substrate W can be decreased.

[0052] Note that even after the processing liquid supply unit 130 stops supplying the processing liquid to the substrate W, the substrate holding and rotating mechanism 120 may continue to rotate while holding the substrate W. In this case, the processing liquid supplied from the processing liquid supply unit 130 to the substrate W flows radially outward on the substrate W, and the processing liquid on the substrate W gradually decreases.

[0053] The remover liquid supplying unit 140 supplies the remover liquid to the substrate W. By supplying the remover liquid to the substrate W, the treatment film formed from the treatment liquid can be removed. The treatment film is partially dissolved by the remover liquid, and cracks occur in the treatment film.

[0054] The stripping liquid may be an alkaline aqueous solution (alkaline liquid). In one example, the stripping liquid is ammonia water.

[0055] However, the stripping solution may be an alkaline aqueous solution (alkaline liquid) other than ammonia water. Specific examples of alkaline aqueous solutions other than ammonia water include a TMAH (tetramethylammonium hydroxide) aqueous solution, a choline aqueous solution, and any combination thereof.

[0056] The stripping solution does not have to be an alkaline aqueous solution. For example, the stripping solution may be pure water (preferably DIW) or a neutral or acidic aqueous solution (non-alkaline aqueous solution).

[0057] The stripping liquid supply unit 140 includes a pipe 142, a valve 144, a nozzle 146, and a moving mechanism 148. The pipe 142 is supplied with the stripping liquid from a supply source. The valve 144 opens and closes a flow path in the pipe 142. The nozzle 146 is connected to the pipe 142. The nozzle 146 ejects the stripping liquid onto the upper surface Wa of the substrate W. The nozzle 146 is preferably configured to be movable relative to the substrate W.

[0058] The moving mechanism 148 has an arm 148a, a shaft portion 148b, and a driving portion 148c. The arm 148a, the shaft portion 148b, and the driving portion 148c of the moving mechanism 148 have the same configuration as the arm 138a, the shaft portion 138b, and the driving portion 138c of the moving mechanism 138. Therefore, detailed description of the arm 148a, the shaft portion 148b, and the driving portion 148c will be omitted.

[0059] The magnetic force application unit 150 applies a magnetic force to the substrate W. Typically, when a processing film formed from the processing liquid supplied from the processing liquid supply unit 130 is in the stripping liquid on the substrate W, the magnetic force application unit 150 applies a magnetic force to the substrate W. Since the processing film contains a magnetic component, the magnetic force application unit 150 applies a magnetic force to the substrate W, so that the processing film holding the object to be removed on the substrate W can be suspended in the stripping liquid.

[0060] The magnetic force application unit 150 may include a permanent magnet. The permanent magnet may be a neodymium magnet.

[0061] Alternatively, the magnetic force application unit 150 may include an electromagnet. When the magnetic force application unit 150 includes an electromagnet, the electromagnet is formed by winding a coil around a core made of a ferromagnetic material. Typically, the coil is made of copper wire. The magnetic force applied from the magnetic force application unit 150 can be adjusted by adjusting the current flowing through the coil.

[0062] The magnetic force application unit 150 may be movable relative to the substrate W. For example, the magnetic force application unit 150 is preferably movable in the horizontal direction and / or the vertical direction according to a movement mechanism controlled by the control unit 22.

[0063] The substrate processing apparatus 100 further includes a shielding member 160 and an upper fluid supply unit 170. The shielding member 160 shields the upper surface Wa of the substrate W. The shielding member 160 is movable with respect to the substrate W. When the shielding member 160 shields the substrate W, the shielding member 160 moves closer to the upper surface Wa of the substrate W. When the shielding member 160 does not shield the substrate W, the shielding member 160 moves away from the upper surface Wa of the substrate W.

[0064] The upper fluid supply unit 170 supplies a fluid from the shielding member 160 to the substrate W. The upper fluid supply unit 170 supplies a liquid or a gas from the shielding member 160 to the substrate W.

[0065] The shielding member 160 is located above the substrate holding and rotating mechanism 120. The shielding member 160 includes a shielding plate 162, a support shaft 164, a nozzle 166, and a moving mechanism 168.

[0066] The shielding plate 162 is, for example, substantially circular. The diameter of the shielding plate 162 is, for example, substantially the same as the diameter of the substrate W. However, the diameter of the shielding plate 162 may be slightly smaller or larger than the diameter of the substrate W. The shielding plate 162 is disposed so that the lower surface of the shielding plate 162 is substantially horizontal. Furthermore, the shielding plate 162 is disposed so that the central axis of the shielding plate 162 is located on the rotation axis Ax of the substrate holding and rotating mechanism 120. The lower surface of the shielding plate 162 faces the upper surface Wa of the substrate W held by the chuck member 122. The shielding plate 162 is connected to the lower end of the support shaft 164 in a horizontal position. The nozzle 166 supplies a fluid to the upper surface Wa of the substrate W.

[0067] The moving mechanism 168 raises or lowers the shielding plate 162 relative to the substrate W between the approach position and the retracted position. When the shielding plate 162 is in the approach position, the shielding plate 162 lowers and approaches the upper surface of the substrate W at a predetermined distance. At the approach position, the shielding plate 162 covers the surface of the substrate W and shields the upper part of the substrate W. When the shielding plate 162 is in the retracted position, the shielding plate 162 is located higher than the approach position. When the shielding plate 162 moves from the approach position to the retracted position, the shielding plate 162 rises and moves away from the substrate W. In FIG. 2, the shielding plate 162 is located at the retracted position.

[0068] For example, the movement mechanism 168 includes a ball screw mechanism and a lift motor that provides a driving force to the ball screw mechanism. The lift motor is, for example, a servo motor.

[0069] The shielding member 160 is connected to an upper fluid supply unit 170. The upper fluid supply unit 170 supplies a fluid to the shielding member 160, and the fluid is discharged from the shielding member 160 to the substrate W.

[0070] The upper fluid supply 170 includes a rinsing liquid supply 172 and a gas supply 174. The rinsing liquid supply 172 and the gas supply 174 are connected to the nozzle 166.

[0071] The rinsing liquid supply unit 172 supplies a rinsing liquid to the substrate W. The substrate W is rinsed by supplying the rinsing liquid to the substrate W. The rinsing liquid is, for example, pure water (deionized water). Note that the rinsing liquid is not limited to pure water, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, IPA (isopropyl alcohol), and hydrochloric acid water with a diluted concentration (for example, about 10 to 100 ppm).

[0072] The rinsing liquid supply unit 172 includes a pipe 172a and a valve 172b. The rinsing liquid is supplied from a supply source to the pipe 172a. The valve 172b opens and closes a flow path in the pipe 172a. The pipe 172a is connected to a nozzle 166. The nozzle 166 ejects the rinsing liquid onto the upper surface Wa of the substrate W.

[0073] Typically, while the rinsing liquid supply unit 172 supplies the rinsing liquid to the substrate W, the substrate holding and rotating mechanism 120 rotates while holding the substrate W. Due to the rotation of the substrate W, the rinsing liquid supplied to the substrate W from the rinsing liquid supply unit 172 flows radially outward on the substrate W.

[0074] The gas supply unit 174 supplies a gas to the substrate W. For example, the gas supplied from the gas supply unit 174 is an inert gas such as nitrogen gas (N2). The inert gas is inert to the upper surface Wa of the substrate W or to a pattern formed on the upper surface Wa of the substrate W. Examples of the inert gas include nitrogen gas and rare gases such as argon. Alternatively, the gas supplied from the gas supply unit 174 may be air.

[0075] The gas supply unit 174 includes a pipe 174a and a valve 174b. Gas is supplied from a supply source to the pipe 174a. The valve 174b opens and closes a flow path in the pipe 174a. The pipe 174a is connected to a nozzle 166. The nozzle 166 ejects gas onto the upper surface Wa of the substrate W.

[0076] The substrate processing apparatus 100 further includes a lower fluid supply unit 180. The lower fluid supply unit 180 supplies a fluid to the back surface Wb of the substrate W. The lower fluid supply unit 180 supplies a liquid or a gas to the back surface Wb of the substrate W.

[0077] The lower fluid supply unit 180 has a pipe 181, a heat medium supply unit 182, a rinsing liquid supply unit 184, and a stripping liquid supply unit 186. The pipe 181 extends vertically inside the hollow axis of the shaft 123. The heat medium supplied from the heat medium supply unit 182, the rinsing liquid supplied from the rinsing liquid supply unit 184, and the stripping liquid supplied from the stripping liquid supply unit 186 flow through the pipe 181. From the upper end of the pipe 181, the heat medium supplied from the heat medium supply unit 182, the rinsing liquid supplied from the rinsing liquid supply unit 184, and the stripping liquid supplied from the stripping liquid supply unit 186 are discharged onto the back surface Wb of the substrate W.

[0078] The heat medium supplying unit 182 supplies a heat medium to the rear surface Wb of the substrate W. The heat medium is a fluid having a temperature higher than room temperature. The heat medium may be a liquid or a gas having a temperature higher than room temperature.

[0079] The heat medium supplied by the heat medium supply unit 182 is, for example, high-temperature DIW having a temperature (e.g., 60°C to 80°C) higher than room temperature and lower than the boiling point of the solvent contained in the processing liquid. The heat medium discharged from the pipe 181 is not limited to high-temperature DIW, and may be a high-temperature gas such as a high-temperature inert gas or high-temperature air having a temperature (e.g., 60°C to 80°C) higher than room temperature and lower than the boiling point of the solvent contained in the processing liquid.

[0080] The heat medium supply unit 182 includes a pipe 182a and a valve 182b. The heat medium is supplied from a supply source to the pipe 182a. The valve 182b opens and closes a flow path in the pipe 182a. The pipe 182a is connected to a pipe 181. The pipe 181 discharges the heat medium onto the back surface Wb of the substrate W.

[0081] The rinsing liquid supply unit 184 supplies a rinsing liquid to the back surface Wb of the substrate W. The rinsing liquid supply unit 184 may supply the rinsing liquid described above in the rinsing liquid supply unit 172. For example, the rinsing liquid supply unit 184 may supply the same rinsing liquid as the rinsing liquid supply unit 172.

[0082] The rinsing liquid supply unit 184 includes a pipe 184a and a valve 184b. The pipe 184a is supplied with the rinsing liquid from a supply source. The valve 184b opens and closes a flow path in the pipe 184a. The pipe 184a is connected to a pipe 181. The pipe 181 discharges the rinsing liquid onto the back surface Wb of the substrate W. The pipe 181 is preferably configured to be movable with respect to the substrate W.

[0083] The remover liquid supply unit 186 supplies the remover liquid to the back surface Wb of the substrate W. The remover liquid supply unit 186 may supply the remover liquid described above in the remover liquid supply unit 140. For example, the remover liquid supply unit 186 may supply the same remover liquid as the remover liquid supply unit 140.

[0084] The stripping liquid supply unit 186 includes a pipe 186a and a valve 186b. The pipe 186a is supplied with the stripping liquid from a supply source. The valve 186b opens and closes a flow path in the pipe 186a. The pipe 186a is connected to a pipe 181. The pipe 181 discharges the stripping liquid onto the back surface Wb of the substrate W.

[0085] The substrate processing apparatus 100 further includes a cup 190. The cup 190 collects liquid scattered from the substrate W. The cup 190 moves up and down. For example, the cup 190 moves up vertically to the side of the substrate W during the period in which the processing liquid supply unit 130 supplies liquid to the substrate W. In this case, the cup 190 collects liquid scattered from the substrate W due to the rotation of the substrate W. Furthermore, when the period in which the processing liquid supply unit 130 supplies liquid to the substrate W ends, the cup 190 moves down vertically from the side of the substrate W.

[0086] As described above, the control device 20 includes the control unit 22 and the memory unit 24. The control unit 22 controls the substrate holding and rotating mechanism 120, the processing liquid supply unit 130, the stripping liquid supply unit 140, the magnetic force application unit 150, the shielding member 160, the upper fluid supply unit 170, the lower fluid supply unit 180, and / or the cup 190. In one example, the control unit 22 controls the electric motor 124, the valves 134, 144, 172b, 174b, 182b, 184b, 186b, the moving mechanisms 138, 148, 168, the magnetic force application unit 150, and / or the cup 190.

[0087] The substrate processing apparatus 100 of this embodiment is suitable for use in the manufacture of a semiconductor device having a semiconductor. Typically, in a semiconductor device, a conductive layer and an insulating layer are laminated on a base material. The substrate processing apparatus 100 is suitable for use in cleaning and / or processing (e.g., etching, changing characteristics, etc.) the conductive layer and / or insulating layer during the manufacture of the semiconductor device.

[0088] Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to Figures 1 to 3. Figure 3 is a block diagram of the substrate processing apparatus 100.

[0089] 3, the controller 20 controls various operations of the substrate processing apparatus 100. The controller 20 controls the indexer robot IR, the center robot CR, the substrate holding and rotating mechanism 120, the processing liquid supply unit 130, the stripping liquid supply unit 140, the magnetic force application unit 150, the shielding member 160, the upper fluid supply unit 170, the lower fluid supply unit 180, and the cup 190. Specifically, the control device 20 controls the indexer robot IR, the center robot CR, the substrate holding and rotating mechanism 120, the processing liquid supply unit 130, the stripping liquid supply unit 140, the magnetic force application unit 150, the shielding member 160, the upper fluid supply unit 170, the lower fluid supply unit 180, and the cup 190 by sending control signals to the indexer robot IR, the center robot CR, the substrate holding and rotating mechanism 120, the processing liquid supply unit 130, the stripping liquid supply unit 140, the magnetic force application unit 150, the shielding member 160, the upper fluid supply unit 170, the lower fluid supply unit 180, and the cup 190.

[0090] Specifically, the control unit 22 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0091] The control unit 22 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and carries the substrate W into any one of the multiple chambers 110. The center robot CR also receives a processed substrate W from the chamber 110 and carries the substrate W out.

[0092] The control unit 22 controls the substrate holding and rotating mechanism 120 to start rotation of the substrate W, change the rotation speed, and stop the rotation of the substrate W. For example, the control unit 22 can control the substrate holding and rotating mechanism 120 to change the rotation speed of the substrate holding and rotating mechanism 120. Specifically, the control unit 22 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 124 of the substrate holding and rotating mechanism 120.

[0093] The control unit 22 can separately control the valve 134 of the processing liquid supply unit 130 and the valve 144 of the stripping liquid supply unit 140 to switch the states of the valves 134, 144 between an open state and a closed state. Specifically, the control unit 22 controls the valve 134 of the processing liquid supply unit 130 and the valve 144 of the stripping liquid supply unit 140 to open the valves 134, 144, thereby allowing the processing liquid and the stripping liquid flowing through the pipes 132, 142 toward the nozzles 136, 146 to pass through. In addition, the control unit 22 can stop the supply of the processing liquid and the stripping liquid flowing through the pipes 132, 142 toward the nozzles 136, 146 by controlling the valve 134 of the processing liquid supply unit 130 and the valve 144 of the stripping liquid supply unit 140 to close the valves 134, 144.

[0094] Similarly, the control unit 22 can separately control the valves 172b, 174b of the upper fluid supply unit 170 and the valves 182b, 184b, 186b of the lower fluid supply unit 180 to switch the valves 172b, 174b, 182b, 184b, 186b between an open state and a closed state.

[0095] The control unit 22 can control the moving mechanism 138 of the processing liquid supply unit 130 and the moving mechanism 148 of the stripping liquid supply unit 140 separately to move the nozzles 136, 146. Specifically, the control unit 22 can control the moving mechanism 138 of the processing liquid supply unit 130 and the moving mechanism 148 of the stripping liquid supply unit 140 separately to move the nozzles 136, 146 above the upper surface Wa of the substrate W. In addition, the control unit 22 can control the moving mechanism 138 of the processing liquid supply unit 130 and the moving mechanism 148 of the stripping liquid supply unit 140 separately to move the nozzles 136, 146 to retracted positions away from above the upper surface Wa of the substrate W.

[0096] Similarly, the control unit 22 can control the moving mechanism 168 of the shielding member 160 to move the shielding plate 162. The control unit 22 can control the moving mechanism 168 of the shielding member 160 to move the shielding plate 162 between a close position located above the upper surface Wa of the substrate W and a retracted position away from the close position.

[0097] The control unit 22 may control the magnetic force application unit 150 to move the magnetic force application unit 150 relative to the substrate W. In addition, when the magnetic force application unit 150 includes an electromagnet, the control unit 22 may control the magnetic force application unit 150 to cause the magnetic force application unit 150 to generate a magnetic force.

[0098] The control unit 22 may control the cup 190 to move the cup 190 relative to the substrate W. For example, the control unit 22 raises the cup 190 vertically upward to the side of the substrate W during the period during which the processing liquid supply unit 130 supplies the processing liquid to the substrate W. Furthermore, when the period during which the processing liquid supply unit 130 supplies the processing liquid to the substrate W ends, the control unit 22 lowers the cup 190 vertically downward from the side of the substrate W. Note that the control unit 22 may similarly move the cup 190 relative to the substrate W when a stripping liquid, a rinsing liquid, a heat medium, or the like other than the processing liquid is supplied.

[0099] The substrate processing apparatus 100 of this embodiment is preferably used for forming semiconductor elements. For example, the substrate processing apparatus 100 is preferably used for processing a substrate W used as a semiconductor element having a stacked structure. The semiconductor element is a so-called 3D structure memory (storage device). As an example, the substrate W is preferably used as a NAND type flash memory.

[0100] Next, a substrate processing method according to the present embodiment will be described with reference to Figures 1 to 4. Figure 4 is a flow diagram of the substrate processing method.

[0101] 4, in step S102, the substrate W is held. Specifically, the substrate holding and rotating mechanism 120 holds the substrate W. When the substrate W is carried into the chamber 110, the substrate W is held by the substrate holding and rotating mechanism 120.

[0102] In step S104, the substrate W is rotated while being held. Specifically, the substrate holding and rotating mechanism 120 rotates the substrate W while being held.

[0103] In step S106, a processing liquid is supplied to the substrate W. Specifically, the processing liquid supply unit 130 supplies the processing liquid to the substrate W. At this time, the rotation speed of the substrate W is, for example, 10 rpm to 1500 rpm.

[0104] In step S108, the film of the processing liquid (processing liquid film) is thinned. For example, the valve 134 is closed to stop the supply of the processing liquid to the substrate W. Typically, the nozzle 136 is moved to the retracted position by the movement mechanism 138.

[0105] Thereafter, while the supply of the processing liquid to the upper surface Wa of the substrate W is stopped, a portion of the processing liquid is removed from the upper surface Wa of the substrate W by centrifugal force so that the processing liquid film on the substrate W has an appropriate thickness.

[0106] The electric motor 124 may change the rotation speed of the substrate W to a predetermined speed. In this case, the rotation speed is, for example, 300 rpm to 1500 rpm. The rotation speed of the substrate W may be kept constant within the range of 300 rpm to 1500 rpm, or may be appropriately changed within the range of 300 rpm to 1500 rpm during the thinning process. The thinning process is performed for a predetermined time, for example, 30 seconds.

[0107] In step S110, the substrate W is heated. The processing liquid film on the substrate W is heated to volatilize (evaporate) a part of the solvent of the processing liquid on the substrate W. As a result, a processing film is formed from the processing liquid film. For example, the shielding plate 162 is moved to a nearby position by the moving mechanism 168, and the gas supply unit 174 supplies gas to the upper surface Wa of the substrate W.

[0108] In step S112, a stripping liquid is supplied to the substrate W. Specifically, the stripping liquid supply unit 140 supplies the stripping liquid to the upper surface Wa of the substrate W. At this time, the stripping liquid supply unit 186 may supply the stripping liquid to the back surface Wb of the substrate W. The treatment film is partially dissolved by the stripping liquid, causing cracks in the treatment film.

[0109] In step S114, a magnetic force is applied to the substrate W. Specifically, the magnetic force application unit 150 is brought closer to the substrate W. If the magnetic force application unit 150 includes an electromagnet, a current is passed through the coil of the electromagnet to generate a magnetic force. Since the treatment film includes a magnetic component, the treatment film is attracted to the magnetic force application unit 150. By applying a magnetic force to the treatment film, the treatment film holding the object to be removed attached to the substrate W is suspended in the stripping solution. Even if the magnetic force of the magnetic force application unit 150 itself is constant, the closer the magnetic force application unit 150 is to the treatment film on the substrate W, the stronger the magnetic force with which the treatment film can be attracted.

[0110] In step S114, the substrate holding and rotating mechanism 120 preferably keeps a low rotation speed of the substrate W. For example, the rotation speed of the substrate W is 10 rpm. Alternatively, the rotation of the substrate W may be stopped.

[0111] In step S116, a rinsing liquid is supplied to the substrate W. Specifically, the rinsing liquid supply unit 172 supplies the rinsing liquid to the upper surface Wa of the substrate W. At this time, the rinsing liquid supply unit 184 may supply the rinsing liquid to the rear surface Wb of the substrate W. By supplying the rinsing liquid, the stripping liquid, the processing film, and the object to be removed can be removed from the substrate W.

[0112] Then, typically, the substrate holding and rotating mechanism 120 stops rotating the substrate W and releases the holding of the substrate W. Then, the substrate W is unloaded from the substrate processing apparatus 100.

[0113] According to this embodiment, a magnetic force is applied to the substrate W while the processing film holding the object to be removed from the substrate W is present in the stripping liquid. The application of the magnetic force causes a force to act vertically on the object to be removed held by the processing film having a magnetic component. As a result, the object to be removed leaves the upper surface Wa of the substrate W together with the processing film and floats in the stripping liquid. Therefore, according to this embodiment, the object to be removed on the substrate can be sufficiently removed.

[0114] This embodiment is preferably used for a substrate W after chemical mechanical polishing (CMP).

[0115] The object to be removed may be an abrasive used in the CMP process of the substrate W. For example, the object to be removed is CeO or SiO2.

[0116] Alternatively, the object to be removed may be particles scraped off from the surface layer of the substrate W. Typically, the surface layer of the substrate W after CMP is formed of a metal, Si, SiO2, SiC, GaN, etc. Examples of metals forming the surface layer of the substrate W after CMP include aluminum, tungsten, copper, cobalt, ruthenium, molybdenum, etc. The surface layer of the substrate W may include a native oxide film.

[0117] Next, the substrate processing method of the present embodiment will be described with reference to Figures 1 to 5. Figures 5(a) to 5(f) are schematic diagrams of the substrate processing method of the present embodiment.

[0118] 5(a), a removal target is attached to the substrate W. Here, the removal target is attached to the planarized substrate W.

[0119] 5(b), the processing liquid Lp is supplied to the substrate W. In detail, the processing liquid supply unit 130 supplies the processing liquid Lp to the substrate W. Typically, the processing liquid supply unit 130 supplies the processing liquid Lp to the substrate W while the substrate holding and rotating mechanism 120 rotates the substrate W at a relatively low rotation speed.

[0120] 5(c), a treated film Lf is formed from the treating liquid Lp. For example, a thin film of the treating liquid Lp (treated liquid film) is heated to solidify or harden the treating liquid film to form the treated film Lf.

[0121] In detail, in the thinning step, a part of the processing liquid Lp is removed from the upper surface Wa of the substrate W by centrifugal force while the supply of the processing liquid Lp to the upper surface Wa of the substrate W is stopped so that the thickness of the film of the processing liquid Lp on the substrate W becomes appropriate. Then, in order to volatilize (evaporate) a part of the solvent of the processing liquid Lp on the substrate W, the substrate W is heated to solidify or harden the processing liquid film, thereby forming a processing film Lf.

[0122] 5(d), the stripping liquid Ls is supplied to the substrate W. In detail, the stripping liquid supply unit 140 supplies the stripping liquid Ls to the substrate W. The processing film Lf is partially dissolved by the stripping liquid Ls.

[0123] 5(e), a magnetic force is applied to the processing film Lf in a state where the stripping liquid Ls is present on the upper surface Wa of the substrate W. In detail, a magnetic force application unit 150 that generates a magnetic force is brought closer to the processing film Lf on the substrate W. By bringing the magnetic force application unit 150 closer to the processing film Lf, a stronger force can be applied to the processing film that holds the object to be removed in the stripping liquid Ls. By applying the magnetic force, the object to be removed held by the processing film Lf floats in the stripping liquid Ls together with the processing film Lf.

[0124] 5(f), the stripping liquid Ls, the processing film Lf, and the objects to be removed are removed from the substrate W. In detail, the rinsing liquid supply unit 172 supplies the rinsing liquid Lr to the substrate W, whereby the stripping liquid Ls, the processing film Lf, and the objects to be removed can be removed from the upper surface Wa of the substrate W.

[0125] As described above, according to this embodiment, the removal target material adhering to the substrate W can be removed from the substrate W sufficiently.

[0126] The magnetic force applying section 150 may apply the magnetic force all at once to the entire substrate W. This can shorten the time it takes to apply the magnetic force to the treatment film.

[0127] Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to Figures 1 to 6. Figure 6 is a schematic diagram of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 in Figure 6 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 2, except that the magnetic force application unit 150 further includes a magnetic force generator 152 and a moving mechanism 158, and therefore a duplicated description will be omitted to avoid redundancy.

[0128] 6, in the substrate processing apparatus 100, the magnetic force application unit 150 has a magnetic force generator 152 and a moving mechanism 158. The magnetic force generator 152 generates a magnetic force. The magnetic force generator 152 may be a permanent magnet. Alternatively, the magnetic force generator 152 may be an electromagnet. When the magnetic force generator 152 is an electromagnet, the magnetic force generator 152 generates a magnetic force when a current is applied to the magnetic force generator 152.

[0129] The moving mechanism 158 moves the magnetic force generator 152. When the magnetic force application unit 150 applies a magnetic force to the processing film, the moving mechanism 158 moves the magnetic force generator 152 to a position facing the upper surface Wa of the substrate W. After the magnetic force application unit 150 applies a magnetic force to the processing film, the moving mechanism 158 moves the magnetic force generator 152 from the position facing the upper surface Wa of the substrate W to a retracted position.

[0130] The magnetic force generator 152 has an annular shape. For example, the magnetic force generator 152 has an annular shape. A through hole 152h is provided in the magnetic force generator 152. The through hole 152h has a circular shape.

[0131] The outer diameter of the magnetic force generator 152 is approximately equal to the diameter of the substrate W. For example, the outer diameter of the magnetic force generator 152 is 90% or more and 110% or less of the diameter of the substrate W.

[0132] The inner diameter of the magnetic force generator 152 (the outer diameter of the through hole 152h) is approximately equal to the outer diameter (the length along the horizontal direction) of the nozzle 146 or slightly larger than the outer diameter of the nozzle 146. For example, the inner diameter of the magnetic force generator 152 is not less than 102% and not more than 110% of the diameter of the substrate W. In this case, the nozzle 146 ejects the stripping liquid onto the substrate W while being inserted into the through hole 152h of the magnetic force generator 152.

[0133] Alternatively, the inner diameter of the magnetic force generator 152 may be smaller than the outer diameter (length along the horizontal direction) of the nozzle 146. For example, the inner diameter of the magnetic force generator 152 may be smaller than the outer diameter (length along the horizontal direction) of the nozzle 146 and larger than the width (length along the horizontal direction) of the stripping liquid discharged from the nozzle 146. In this case, the nozzle 146 discharges the stripping liquid onto the substrate W from a position vertically above the magnetic force generator 152.

[0134] The moving mechanism 158 moves the magnetic force generator 152 to the upper surface Wa of the substrate W. Typically, when applying a magnetic force to the treatment film on the substrate W, the moving mechanism 158 moves the magnetic force generator 152 to a position facing the upper surface Wa of the substrate W.

[0135] Furthermore, the moving mechanism 158 moves the magnetic force generator 152 from the upper surface of the substrate W. Typically, the moving mechanism 158 moves the magnetic force generator 152 from the upper surface of the substrate W to a retracted position after applying a magnetic force to the treatment film on the substrate W.

[0136] The moving mechanism 158 has an arm 158a, a shaft portion 158b, and a driving portion 158c. The arm 158a, the shaft portion 158b, and the driving portion 158c of the moving mechanism 158 have the same configuration as the arm 138a, the shaft portion 138b, and the driving portion 138c of the moving mechanism 138. Therefore, detailed description of the arm 158a, the shaft portion 158b, and the driving portion 158c will be omitted.

[0137] 6, the magnetic force application unit 150 applies the magnetic force to the entire surface of the substrate W at once, but this embodiment is not limited to this. The magnetic force application unit 150 may apply the magnetic force while scanning the substrate W.

[0138] Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to Figures 1 to 7. Figure 7 is a schematic diagram of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 in Figure 7 has a similar configuration to the substrate processing apparatus 100 described above with reference to Figure 6, except that the shape of the magnetic force generator 152 is different, and therefore a redundant description will be omitted to avoid redundancy.

[0139] 7, in the substrate processing apparatus 100, the outer diameter (length along the horizontal direction) of the magnetic force generator 152 is smaller than the radius of the substrate W. For example, the outer diameter (length along the horizontal direction) of the magnetic force generator 152 is 5% or more and 30% or less of the radius of the substrate W.

[0140] When applying a magnetic force to the treatment film, the magnetic force generator 152 scans the upper surface Wa of the substrate W. For example, the magnetic force generator 152 may scan from the center of the substrate W toward the outer side in the radial direction relative to the upper surface Wa of the substrate W. In this case, the moving mechanism 158 moves the magnetic force generator 152 from the center of the substrate W toward the outer side in the radial direction while approaching the upper surface Wa of the substrate W to a predetermined distance.

[0141] Alternatively, the magnetic force generator 152 may scan the upper surface Wa of the substrate W from the radial outside toward the center of the substrate W. In this case, the moving mechanism 158 moves the magnetic force generator 152 from the radial outside toward the center of the substrate W while approaching the upper surface Wa of the substrate W to a predetermined distance. When the magnetic force generator 152 approaches the center of the substrate W, the magnetic force generator 152 stops. Thereafter, the magnetic force generator 152 rises in a direction away from the upper surface Wa of the substrate W and then returns to the retracted position.

[0142] In this embodiment, the magnetic force generator 152 scans the upper surface Wa of the substrate W, so that not only a vertical force but also a diagonally upward force acts on the object to be removed. In this way, by scanning the magnetic force generator 152, a force can be applied to the object to be removed diagonally upward, so that the object to be removed can be sufficiently removed. In particular, when the object to be removed is present in a space or recess of the substrate W, the object to be removed can be efficiently removed from the substrate W by scanning the magnetic force generator 152.

[0143] 1 to 7, the object to be removed adhering to the substrate W is peeled off from the substrate W by applying a magnetic force to one type of processing film formed on the substrate W, but the present embodiment is not limited to this. The object to be removed adhering to the substrate W may be peeled off from the substrate W by applying a magnetic force to two or more types of processing films formed on the substrate W.

[0144] Next, a substrate processing apparatus 100 according to the present embodiment will be described with reference to Fig. 1 to Fig. 8. Fig. 8 is a schematic diagram of the substrate processing apparatus 100 according to the present embodiment. The substrate processing apparatus 100 in Fig. 8 has a similar configuration to the substrate processing apparatus 100 described above with reference to Fig. 2, except that the processing liquid supply unit 130 is different from the first processing liquid supply unit 130p that supplies a first processing liquid and the second processing liquid supply unit 130q that supplies a second processing liquid, and therefore, a duplicated description will be omitted to avoid redundancy.

[0145] 8, the processing liquid supply unit 130 includes a first processing liquid supply unit 130p and a second processing liquid supply unit 130q. The first processing liquid supply unit 130p supplies a first processing liquid to the substrate W. The second processing liquid supply unit 130q supplies a second processing liquid different from the first processing liquid to the substrate W.

[0146] The first processing liquid supply unit 130p supplies the first processing liquid to the substrate W. The first processing liquid contains a solute, a solvent, and a magnetic component.

[0147] The first processing liquid supply unit 130p includes a pipe 132p, a valve 134p, a nozzle 136p, and a moving mechanism 138p. The first processing liquid is supplied from a supply source to the pipe 132p. The moving mechanism 138p includes an arm 138a, a shaft 138b, and a drive unit 138c.

[0148] The second processing liquid supply unit 130q supplies the second processing liquid to the substrate W. The second processing liquid contains a solute, a solvent, and a magnetic component.

[0149] The second processing liquid supply unit 130q includes a pipe 132q, a valve 134q, a nozzle 136q, and a moving mechanism 138q. The second processing liquid is supplied from a supply source to the pipe 132q. The moving mechanism 138q includes an arm 138a, a shaft 138b, and a drive unit 138c.

[0150] The first processing liquid supplied from the first processing liquid supply unit 130p is different from the second processing liquid supplied from the second processing liquid supply unit 130q. The first processing liquid may be different from the second processing liquid in any of the solute, the solvent, and the magnetic component. Alternatively, the first processing liquid may be different from the second processing liquid in any of the mass ratio and the temperature.

[0151] For example, the mass ratio of the magnetic component to the first processing liquid supplied from the first processing liquid supply unit 130p is preferably higher than the mass ratio of the magnetic component to the second processing liquid supplied from the second processing liquid supply unit 130q. In this case, the processing film (first processing film) formed from the first processing liquid comes into contact with the upper surface Wa of the substrate W, so that the effect of the magnetic force on the first processing film can be increased. Therefore, even if the object to be removed is strongly attached to the upper surface Wa of the substrate W, the object to be removed can be suitably removed. Note that the coercive force of the magnetic component of the first processing liquid supplied from the first processing liquid supply unit 130p is preferably higher than the coercive force of the magnetic component of the second processing liquid supplied from the second processing liquid supply unit 130q.

[0152] Next, a substrate processing method according to the present embodiment will be described with reference to Figures 1 to 9. Figure 9 is a flow diagram of the substrate processing method. The flow diagram of Figure 9 is similar to the flow diagram described above with reference to Figure 4, except that a first processing liquid and a second processing liquid are supplied, and therefore repeated explanations will be omitted to avoid redundancy.

[0153] 9, in step S102, the substrate W is held. Specifically, the substrate holding and rotating mechanism 120 holds the substrate W. When the substrate W is carried into the chamber 110, the substrate W is held by the substrate holding and rotating mechanism 120.

[0154] In step S104, the substrate W is rotated while being held. Specifically, the substrate holding and rotating mechanism 120 rotates the substrate W while being held.

[0155] In step S106a, a first processing liquid is supplied to the substrate W. Specifically, the first processing liquid supply unit 130p supplies the first processing liquid to the substrate W.

[0156] In step S108a, the film of the first processing liquid (first processing liquid film) is thinned. For example, the supply of the first processing liquid is stopped while continuing to rotate the substrate W. Furthermore, in a state where the supply of the first processing liquid to the upper surface Wa of the substrate W is stopped, a part of the first processing liquid is removed from the upper surface Wa of the substrate W by centrifugal force so that the thickness of the first processing liquid film on the substrate W becomes appropriate.

[0157] In step S110a, the substrate W is heated. For example, the heat medium supplying unit 182 supplies a heat medium to the substrate W, thereby heating the substrate W. As a result, the first processing liquid film is solidified or cured to form a first processing film.

[0158] In step S106b, the second processing liquid is supplied to the substrate W. Specifically, the second processing liquid supply unit 130q supplies the second processing liquid to the substrate W.

[0159] In step S108b, the film of the second processing liquid (second processing liquid film) is thinned. For example, the supply of the second processing liquid is stopped while continuing to rotate the substrate W. Furthermore, in a state where the supply of the second processing liquid to the upper surface Wa of the substrate W is stopped, a part of the second processing liquid is removed from the upper surface Wa of the substrate W by centrifugal force so that the thickness of the second processing liquid film on the substrate W becomes appropriate.

[0160] In step S110b, the substrate W is heated. For example, the heat medium supplying unit 182 supplies a heat medium to the substrate W, thereby heating the substrate W. As a result, the second processing liquid film is solidified or cured to form a second processing film.

[0161] In step S112, a stripping liquid is supplied to the substrate W. For example, the stripping liquid supply unit 140 supplies the stripping liquid to the upper surface Wa of the substrate W. At this time, the stripping liquid supply unit 186 may supply the stripping liquid to the rear surface Wb of the substrate W. The supply of the stripping liquid partially dissolves the first processing film and the second processing film.

[0162] In step S114, a magnetic force is applied to the substrate W. Specifically, the magnetic force application unit 150 is brought close to the processing film on the substrate W. If the magnetic force application unit 150 includes an electromagnet, a current is passed through the coil of the electromagnet to generate a magnetic force. By applying a magnetic force to the first processing film and the second processing film, the two processing films holding the objects to be removed attached to the substrate W can be suspended in the stripping solution.

[0163] In step S116, a rinsing liquid is supplied to the substrate W. Specifically, the rinsing liquid supply unit 172 supplies the rinsing liquid to the upper surface Wa of the substrate W. At this time, the rinsing liquid supply unit 184 may supply the rinsing liquid to the rear surface Wb of the substrate W. By supplying the rinsing liquid, the stripping liquid, the first processing film, the second processing film, and the object to be removed can be removed from the substrate W.

[0164] Next, the substrate processing method of the present embodiment will be described with reference to Figures 1 to 11. Figures 10(a) to 11(c) are schematic diagrams of the substrate processing method of the present embodiment.

[0165] 10(a), objects to be removed are attached to the substrate W. Here, objects to be removed having different sizes are attached to the substrate W.

[0166] 10(b), the first processing liquid L1p is supplied to the substrate W. In detail, the first processing liquid supply unit 130p supplies the first processing liquid L1p to the upper surface Wa of the substrate W.

[0167] 10(c), a first processing film L1f is formed from the first processing liquid L1p. For example, a film of the first processing liquid L1p (first processing liquid film) is thinned and heated to solidify or harden the first processing liquid film, thereby forming the first processing film L1f.

[0168] In detail, in order to make the film of the first processing liquid L1p on the substrate W have an appropriate thickness, a part of the first processing liquid L1p is removed from the upper surface Wa of the substrate W by centrifugal force while stopping the supply of the first processing liquid L1p to the upper surface Wa of the substrate W. Then, in order to volatilize (evaporate) a part of the solvent of the first processing liquid L1p on the substrate W, the substrate W is heated to solidify or harden the processing liquid film, thereby forming a first processing film L1f.

[0169] 10(d), the second processing liquid L2p is supplied to the substrate W. In detail, the second processing liquid supply unit 130q supplies the second processing liquid L2p to the upper surface Wa of the substrate W.

[0170] 10(e), a second processing film L2f is formed from the second processing liquid L2p. For example, the second processing liquid film is solidified or hardened by heating the second processing liquid L2p in a thin state, thereby forming the second processing film L2f.

[0171] In detail, while the supply of the second processing liquid L2p to the upper surface Wa of the substrate W is stopped, part of the second processing liquid L2p is removed from the upper surface Wa of the substrate W by centrifugal force so that the film of the second processing liquid L2p on the substrate W has an appropriate thickness. Then, in order to volatilize (evaporate) part of the solvent of the second processing liquid L2p on the substrate W, the substrate W is heated to solidify or harden the second processing liquid film, thereby forming a second processing film L2f.

[0172] As shown in Fig. 11(a), a stripping liquid Ls is supplied to the substrate W. In detail, the stripping liquid supply unit 140 supplies the stripping liquid Ls to the upper surface Wa of the substrate W. The first processing film L1f and the second processing film L2f are partially dissolved by the stripping liquid Ls, causing cracks to occur in the first processing film L1f and the second processing film L2f. The first processing film L1f and the second processing film L2f may float in the stripping liquid Ls due to the stripping liquid Ls.

[0173] As shown in FIG. 11(b), in a state where the stripping liquid Ls exists on the substrate W, a magnetic force is applied to the first processing film L1f and the second processing film L2f. In detail, the magnetic force application unit 150 applies a magnetic force to the first processing film L1f and the second processing film L2f on the upper surface Wa of the substrate W. For example, the magnetic force generator 152 is brought close to the first processing film L1f and the second processing film L2f on the upper surface Wa of the substrate W. Since the first processing film L1f and the second processing film L2f contain magnetic components, the first processing film L1f and the second processing film L2f are attracted to the magnetic force generator 152 by the approach of the magnetic force generator 152 and are subjected to a levitation force in the stripping liquid Ls. As a result, the first processing film L1f and the second processing film L2f holding the object to be removed float in the stripping liquid Ls.

[0174] 11(c), the stripping liquid Ls, the first processing film L1f, the second processing film L2f, and the removal target are removed from the upper surface Wa of the substrate W. In detail, the rinsing liquid supply unit 172 supplies the rinsing liquid Lr to the substrate W.

[0175] According to this embodiment, a magnetic force is applied to the first processing film L1f and the second processing film L2f in the stripping solution Ls on the substrate W. By applying a magnetic force to the first processing film L1f and the second processing film L2, relatively small objects to be removed on the substrate W can be suitably removed.

[0176] A plurality of grooves may be provided on the upper surface Wa of the substrate W. The substrate W may have a pattern shape. In this case, the substrate processing apparatus 100 preferably supplies an organic solvent after supplying a rinsing liquid in order to prevent the pattern from collapsing.

[0177] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 12. Figure 12 is a schematic diagram of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of Figure 12 has the same configuration as the substrate processing apparatus 100 described above with reference to Figure 8, except that the upper fluid supply unit 170 further includes an organic solvent supply unit 176, and therefore, to avoid redundancy, repeated description will be omitted.

[0178] As shown in FIG. 12, in the substrate processing apparatus 100, the upper fluid supply unit 170 further includes an organic solvent supply unit 176. The organic solvent supply unit 176 supplies an organic solvent to the substrate W. The organic solvent is a liquid for removing the rinsing liquid. By supplying the organic solvent to the substrate W, the rinsing liquid is replaced with the organic solvent. The organic solvent is preferably a liquid that is more volatile than the rinsing liquid. The organic solvent is preferably compatible with the rinsing liquid.

[0179] For example, the organic solvent functions as a remover for removing the rinsing liquid. Examples of the organic solvent include a liquid containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, PGEE (propylene glycol monoethyl ether), and trans-1,2-dichloroethylene.

[0180] The organic solvent supply unit 176 includes a pipe 176a and a valve 176b. The pipe 176a is supplied with an organic solvent from a supply source. The valve 176b opens and closes a flow path in the pipe 176a. The nozzle 166 is connected to the pipe 176a. The nozzle 166 ejects the organic solvent onto the upper surface Wa of the substrate W.

[0181] Typically, while the organic solvent supply unit 176 supplies the organic solvent to the substrate W, the substrate holding and rotating mechanism 120 rotates while holding the substrate W. Due to the rotation of the substrate W, the organic solvent supplied to the substrate W from the organic solvent supply unit 176 flows radially outward on the substrate W.

[0182] Next, a substrate processing method according to the present embodiment will be described with reference to Figures 1 to 13. Figure 13 is a flow diagram of the substrate processing method according to the present embodiment.

[0183] 13, in step Sa, the substrate W is loaded into the substrate processing apparatus 100. In detail, the substrate W is loaded into the chamber 110.

[0184] In step Sb, the substrate W is held in the substrate processing apparatus 100. In detail, the substrate holding and rotating mechanism 120 holds the substrate W in the chamber 110.

[0185] In step Sc, the substrate processing apparatus 100 rotates the substrate W. In detail, the substrate holding and rotating mechanism 120 in the chamber 110 starts rotating the substrate W.

[0186] In step Sda, the substrate processing apparatus 100 supplies a first processing liquid to the substrate W. More specifically, the first processing liquid supply unit 130p supplies the first processing liquid to the substrate W.

[0187] In step Sdb, the film of the first processing liquid (first processing liquid film) is thinned. In detail, the valve 134p is closed to stop the supply of the first processing liquid to the substrate W. Furthermore, in a state where the supply of the first processing liquid to the upper surface Wa of the substrate W is stopped, a part of the first processing liquid is removed from the upper surface Wa of the substrate W by centrifugal force so that the thickness of the first processing liquid film on the substrate W becomes appropriate.

[0188] In step Sdc, the substrate W is heated to solidify or harden the first processing liquid film, thereby forming a film (first processing film) by evaporating the solvent from the first processing liquid film. For example, the heat medium supplying unit 182 supplies a heat medium to the substrate W. In detail, the heat medium supplying unit 182 supplies a heat medium to the back surface Wb of the substrate W, and the gas supplying unit 174 supplies a gas to the upper surface Wa of the substrate W.

[0189] In step Sea, the substrate processing apparatus 100 supplies the second processing liquid to the substrate W. In detail, the second processing liquid supply unit 130q supplies the second processing liquid to the substrate W.

[0190] In step Seb, the film of the second processing liquid (second processing liquid film) is thinned. In detail, the valve 134q is closed to stop the supply of the second processing liquid to the substrate W. Furthermore, in a state where the supply of the second processing liquid to the upper surface Wa of the substrate W is stopped, a part of the second processing liquid is removed from the upper surface Wa of the substrate W by centrifugal force so that the thickness of the second processing liquid film on the substrate W becomes appropriate.

[0191] In step Sdc, the substrate W is heated to solidify or harden the second processing liquid film, thereby forming a film (second processing film) by evaporating the solvent from the second processing liquid film. For example, the heat medium supplying unit 182 supplies a heat medium to the substrate W. In detail, the heat medium supplying unit 182 supplies a heat medium to the back surface Wb of the substrate W, and the gas supplying unit 174 supplies a gas to the upper surface Wa of the substrate W.

[0192] In step Sf, the substrate processing apparatus 100 supplies a stripping liquid to the substrate W. In detail, the stripping liquid supply unit 140 supplies the stripping liquid to the substrate W. The first processing film and the second processing film are partially dissolved by the stripping liquid.

[0193] In step Sg, the substrate processing apparatus 100 applies a magnetic force to the substrate W. For example, the magnetic force application unit 150 is brought closer to the substrate W. By applying the magnetic force, the first processing film and the second processing film holding the object to be removed are detached from the upper surface Wa of the substrate W and float in the stripping liquid.

[0194] In step Sh, the substrate processing apparatus 100 supplies a rinsing liquid to the substrate W. In detail, the rinsing liquid supply unit 172 supplies the rinsing liquid to the substrate W. By supplying the rinsing liquid, the stripping liquid, the processing film, and the object to be removed on the substrate W are removed.

[0195] In step Si, the substrate processing apparatus 100 supplies an organic solvent to the substrate W. In detail, the organic solvent supply unit 176 supplies the organic solvent to the substrate W. By supplying the organic solvent, the rinsing liquid on the substrate W is replaced with the organic solvent.

[0196] In step Sj, the substrate processing apparatus 100 spin-dries the substrate W. This dries the organic solvent from the substrate W. For example, the substrate holding and rotating mechanism 120 increases the rotation speed of the substrate W. In one example, the substrate holding and rotating mechanism 120 increases the rotation speed of the substrate W to 1500 rpm.

[0197] In step Sk, the substrate processing apparatus 100 unloads the substrate W. For example, the substrate holding and rotation mechanism 120 stops rotating the substrate W and releases its hold on the substrate W. Thereafter, the center robot CR takes out the substrate W from the chamber 110. Thereafter, the substrate W is unloaded to the outside of the substrate processing system 10 via the indexer robot IR.

[0198] As described above, according to this embodiment, the removal target material can be sufficiently removed from the substrate W transferred to the substrate processing apparatus 100.

[0199] In the above description, the substrate processing apparatus 100 of the present embodiment processes the substrate W after the CMP process, but the present embodiment is not limited to this. The substrate processing apparatus 100 of the present embodiment may process a substrate after a process other than the CMP process.

[0200] For example, the substrate processing apparatus 100 of the present embodiment may process a substrate W after dry etching. For example, the surface layer of the substrate W after dry etching is formed of a low-k film, TiN, SiO2, Si, SiN, SiC, or Poly-Si. In this case, too, objects to be removed from the surface layer of the substrate W may remain on the substrate W. The objects to be removed may be particles scraped off from the surface layer of the substrate W.

[0201] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments, and can be implemented in various aspects without departing from the gist of the present invention. In addition, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be deleted from all components shown in the embodiments. Furthermore, components across different embodiments may be appropriately combined. The drawings are mainly shown schematically for ease of understanding, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of drawing. In addition, the material, shape, dimensions, etc. of each component shown in the above embodiments are examples and are not particularly limited, and various changes are possible within a range that does not substantially deviate from the effects of the present invention. [Industrial Applicability]

[0202] The present invention can be suitably used in a substrate processing apparatus and a substrate processing method. [Explanation of symbols]

[0203] 100 Substrate processing apparatus 110 Chamber 120 Substrate holding and rotating mechanism 130 Processing liquid supply unit 140 Stripping solution supply unit 150 Magnetic force application unit W substrate

Claims

1. a substrate holding and rotating mechanism that holds the substrate in a horizontal direction and rotates the substrate; a processing liquid supply unit that supplies a processing liquid having a magnetic component to the substrate held by the substrate holding and rotating mechanism; a stripping liquid supplying unit that supplies a stripping liquid to the substrate on which a treatment film formed by solidifying or curing the treatment liquid has been formed; a magnetic force applying unit that applies a magnetic force to the substrate to which the stripping liquid has been supplied; a rinsing liquid supplying unit that supplies a rinsing liquid to the substrate to remove the treatment film and the stripping liquid from the substrate after the magnetic force applying unit applies the magnetic force to the substrate; a control unit that controls the substrate holding and rotating mechanism, the processing liquid supply unit, the stripping liquid supply unit, the magnetic force application unit, and the rinsing liquid supply unit; The substrate processing apparatus includes:

2. The substrate processing apparatus according to claim 1 , wherein the processing liquid supply unit supplies, as the processing liquid, a mixture containing the magnetic component, a solute, and a solvent to the substrate.

3. The magnetic force application unit includes: A magnetic force generator that generates a magnetic force; a moving mechanism for moving the magnetic force generator; Equipped with 3 . The substrate processing apparatus according to claim 1 , wherein the control unit controls the stripping solution supply unit and the moving mechanism so that the magnetic force generator approaches the substrate while the stripping solution supply unit supplies the stripping solution to the substrate.

4. The processing liquid supply unit includes: a first processing liquid supply unit that supplies a first processing liquid to the substrate; a second processing liquid supply unit that supplies a second processing liquid different from the first processing liquid to the substrate after the first processing liquid supply unit has supplied the first processing liquid to the substrate; The substrate processing apparatus according to claim 1 , further comprising:

5. the first processing liquid supply unit supplies a mixture containing a first magnetic component, a first solute, and a first solvent to the substrate as the first processing liquid; the second processing liquid supply unit supplies, as the second processing liquid, a mixture including a second magnetic component, a second solute, and a second solvent to the substrate; The substrate processing apparatus of claim 4 , wherein a mass ratio of the first magnetic component to the first processing liquid is greater than a mass ratio of the second magnetic component to the second processing liquid.

6. a substrate holding step of holding the substrate in a horizontal direction; a substrate rotating step of rotating the substrate; a processing liquid supplying step of supplying a processing liquid having a magnetic component to the substrate; a stripping liquid supplying step of supplying a stripping liquid to the substrate on which a treatment film formed by solidifying or curing the treatment liquid supplied in the treatment liquid supplying step has been formed; a magnetic force applying step of applying a magnetic force to the substrate to which the stripping solution has been supplied in the stripping solution supplying step; a rinsing liquid supplying step of removing the treatment film and the stripping liquid from the substrate by supplying a rinsing liquid to the substrate after the magnetic force applying step; The method for processing a substrate includes the steps of:

7. 7. The substrate processing method according to claim 6, wherein in the processing liquid supplying step, a mixture containing the magnetic component, a solute, and a solvent is supplied to the substrate as the processing liquid.

8. 8. The substrate processing method according to claim 6, wherein the magnetic force applying step comprises bringing a magnetic force generator close to the substrate while the stripping solution is being supplied to the substrate in the stripping solution supplying step.

9. The processing liquid supplying step includes: a first processing liquid supplying step of supplying a first processing liquid to the substrate; a second processing liquid supplying step of supplying a second processing liquid different from the first processing liquid to the substrate after the first processing liquid is supplied to the substrate in the first processing liquid supplying step; The substrate processing method according to claim 6 , further comprising:

10. In the first treatment liquid supplying step, the first treatment liquid contains a first magnetic component, a first solute, and a first solvent, In the second treatment liquid supplying step, the second treatment liquid includes a second magnetic component, a second solute, and a second solvent, The method of claim 9 , wherein a mass ratio of the first magnetic component to the first processing liquid is greater than a mass ratio of the second magnetic component to the second processing liquid.

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