Electronic device

Abstract

Provided is an electronic device capable of reducing the possibility of malfunction. This electronic device comprises: a first substrate having a drive circuit; a second substrate having a light emission part driven by the drive circuit, and mounted on one surface side of the first substrate; and a light shield part provided on the first substrate and shielding at least a part of the drive circuit from light emitted by the light emission part.

Description

[Technical field]

[0001] The present disclosure relates to electronic devices. [Background technology]

[0002] Surface-emitting lasers such as VCSELs (Vertical Cavity Surface Emitting Lasers) are known as a type of semiconductor laser (see, for example, Patent Documents 1 and 2). Generally, in a light-emitting device using a surface-emitting laser, a plurality of light-emitting elements are provided in a two-dimensional array on the front or back surface of a substrate, and a lens is placed on top of the light-emitting elements. Light emitted from the plurality of light-emitting elements is irradiated to the outside of the light-emitting device through the lens. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2004-526194 [Patent Document 2] JP 2020-20680 A Summary of the Invention [Problem to be solved by the invention]

[0004] FIG. 7A of Patent Document 2 discloses a configuration in which a chip on which a circuit serving as a light-emitting unit is formed is flip-chip mounted on a chip on which a circuit serving as a driving unit is formed. In a device with this configuration, a part of the light emitted from the light-emitting unit may be reflected on the surface of the lens and enter the driving unit. The driving unit has an element (e.g., a bipolar transistor) that includes a pn junction surface. When light hits these elements, a photovoltaic effect occurs, which changes the characteristics of the element and may cause the driving unit to malfunction.

[0005] The present disclosure has been made in consideration of the above circumstances, and has an object to provide an electronic device that can reduce the possibility of malfunction. [Means for solving the problem]

[0006] An electronic device according to one embodiment of the present disclosure comprises a first substrate having a drive circuit, a second substrate having a light-emitting portion driven by the drive circuit and mounted on one side of the first substrate, and a light-shielding portion provided on the first substrate for shielding at least a portion of the drive circuit from light emitted by the light-emitting portion.

[0007] With this, even if part of the light (e.g., infrared light) emitted by the light-emitting unit is reflected by the lens surface and directed toward a part of the drive circuit (e.g., the bias circuit), this infrared light is blocked by the light-shielding unit. The light-shielding unit can suppress the photovoltaic effect from occurring at the pn junction surface of an element (e.g., a bipolar transistor) in the bias circuit, and can suppress changes in the characteristics of the element due to the photovoltaic effect. As a result, the light-shielding unit can reduce the possibility of the drive circuit malfunctioning.

[0008] An electronic device according to another aspect of the present disclosure includes a first substrate having a drive circuit, a second substrate having a light-emitting portion driven by the drive circuit and mounted on one surface of the first substrate, and a peripheral light-shielding portion having light-shielding properties against light emitted by the light-emitting portion. The first substrate has a wire-bonding pad electrode provided on one surface of the first substrate, and a protective film provided on one surface of the first substrate and having an opening formed therein to expose a surface of the wire-bonding pad electrode. The peripheral light-shielding portion is disposed around the wire-bonding pad electrode.

[0009] With this, even if a part of the light (e.g., infrared light) emitted by the light emitting section is reflected by the lens surface and directed toward the periphery of the wire bonding electrode, the infrared light is blocked by the peripheral light shielding section. As a result, the peripheral light shielding section can suppress the intrusion of light into the first substrate from the periphery of the wire bonding electrode. As a result, the peripheral light shielding section can reduce the possibility of the drive circuit malfunctioning. [Brief description of the drawings]

[0010] [Figure 1] FIG. 1 is a block diagram illustrating an example of the configuration of a distance measuring device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a cross-sectional view illustrating an example of the structure of the distance measuring device according to the first embodiment of the present disclosure. [Diagram 3] FIG. 3 is a block diagram illustrating a configuration example of a drive circuit according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a cross-sectional view illustrating a structural example of the VCSEL mounting assembly according to the first embodiment of the present disclosure. [Diagram 5] FIG. 5 is a cross-sectional view showing a configuration example of a VCSEL mounting assembly according to a first modification of the first embodiment of the present disclosure. [Figure 6] FIG. 6 is a cross-sectional view showing a configuration example of a VCSEL mounting assembly according to a second modification of the first embodiment of the present disclosure. [Figure 7] FIG. 7 is a cross-sectional view showing a configuration example of a VCSEL mounting assembly according to a third modification of the first embodiment of the present disclosure. [Figure 8A] FIG. 8A is a cross-sectional view showing a configuration example of a VCSEL mounting assembly according to Modification 4A of Embodiment 1 of the present disclosure. [Figure 8B] FIG. 8B is a cross-sectional view showing a configuration example of a VCSEL mounting assembly according to Modification 4B of Embodiment 1 of the present disclosure. [Figure 9A] FIG. 9A is a cross-sectional view showing a configuration example of a VCSEL mounting assembly according to Modification 5A of Embodiment 1 of the present disclosure. [Figure 9B] FIG. 9B is a cross-sectional view showing a configuration example of a VCSEL mounting assembly according to Modification 5B of Embodiment 1 of the present disclosure. [Figure 10] FIG. 10 is a plan view illustrating a structural example of a VCSEL mounting assembly according to the second embodiment of the present disclosure. [Figure 11] FIG. 11 is an enlarged plan view of the WB pad electrode and its surrounding area shown in FIG. [Figure 12] FIG. 12 is a cross-sectional view showing a configuration example of a VCSEL mounting assembly according to the second embodiment of the present disclosure. [Figure 13] FIG. 13 is a cross-sectional view showing a first configuration example of a VCSEL mounting body according to the third embodiment of the present disclosure. [Figure 14] FIG. 14 is a cross-sectional view showing a second configuration example of a VCSEL mounting body according to the third embodiment of the present disclosure. [Figure 15] FIG. 15 is a cross-sectional view showing a third configuration example of a VCSEL mounting body according to the third embodiment of the present disclosure. [Figure 16] FIG. 16 is a cross-sectional view showing a first configuration example of a VCSEL mounting body according to the fourth embodiment of the present disclosure. [Figure 17] FIG. 17 is an enlarged plan view of the WB pad electrode and its periphery shown in FIG. [Figure 18] FIG. 18 is a plan view showing a modified example of the arrangement of the opaque members. [Figure 19] FIG. 19 is a cross-sectional view showing a second configuration example of a VCSEL mounting body according to the fourth embodiment of the present disclosure. [Figure 20] FIG. 20 is a cross-sectional view showing a third configuration example of a VCSEL mounting body according to the fourth embodiment of the present disclosure. [Figure 21] FIG. 21 is a cross-sectional view showing a fourth configuration example of a VCSEL mounting body according to the fourth embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, the first embodiment of the present disclosure will be described with reference to the drawings. In the drawings referred to in the following description, the same or similar parts are denoted with the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between thickness and planar dimensions, the thickness ratio of each layer, etc., differ from the actual ones. Therefore, the specific thickness and dimensions should be determined with reference to the following description. In addition, it goes without saying that the drawings include parts with different dimensional relationships and ratios.

[0012] The definitions of directions such as up and down in the following description are merely for the convenience of explanation and do not limit the technical ideas of the present disclosure. For example, if an object is rotated 90 degrees and observed, up and down are converted to left and right and read, and if it is rotated 180 degrees and observed, up and down are obviously read inverted.

[0013] In the following description, directions may be described using the terms X-axis, Y-axis, and Z-axis. For example, the X-axis and Y-axis directions are parallel to the upper surface 42a of the LDD substrate 42. The X-axis and Y-axis directions are also referred to as horizontal directions. The Z-axis direction is a direction that perpendicularly intersects with the upper surface 42a. The X-axis, Y-axis, and Z-axis directions are orthogonal to each other.

[0014] <Embodiment 1> Fig. 1 is a block diagram showing a configuration example of a distance measuring device 100 according to the first embodiment of the present disclosure. As shown in Fig. 1, the distance measuring device 100 according to the first embodiment of the present disclosure (an example of an "electronic device" of the present disclosure) includes a light emitting device 1, an imaging device 2, and a control device 3. The distance measuring device 100 irradiates a subject with light emitted from the light emitting device 1, receives light reflected from the subject with the imaging device 2 to capture an image of the subject, and measures (calculates) a distance to the subject with the control device 3 using an image signal output from the imaging device 2. The light emitting device 1 functions as a light source for the imaging device 2 to capture an image of the subject.

[0015] The light emitting device 1 includes a light emitting unit 11, a drive circuit 12, a power supply circuit 13, and a light emitting side optical system 14. The imaging device 2 includes an image sensor 21, an image processing unit 22, and an imaging side optical system 23. The control device 3 includes a distance measuring unit 31.

[0016] The light emitting unit 11 emits laser light to be irradiated onto a subject. The light emitting unit 11 has a VCSEL. For example, the light emitting unit 11 has a plurality of light emitting elements arranged in a two-dimensional array, and each light emitting element has a VCSEL structure. The light emitted from these light emitting elements is, for example, infrared light. The light emitting unit 11 is provided in a chip called an LD (Laser Diode) chip 41.

[0017] The driving circuit 12 is an electric circuit that drives the light emitting unit 11. The power supply circuit 13 is an electric circuit that generates a power supply voltage for the driving circuit 12. For example, the distance measuring device 100 generates a power supply voltage from an input voltage supplied from a battery (not shown) using the power supply circuit 13, supplies the generated power supply voltage to the driving circuit 12, and drives the light emitting unit 11 using the driving circuit 12. The battery may be provided inside the distance measuring device 100 or may be provided outside the distance measuring device 100. The driving circuit 12 is provided in a substrate called an LDD (Laser Diode Driver) substrate 42.

[0018] The light-emitting side optical system 14 includes various optical elements, and irradiates the subject with light from the light-emitting unit 11 through these optical elements. Similarly, the image-capturing side optical system 23 includes various optical elements, and receives light from the subject through these optical elements.

[0019] The image sensor 21 receives light from a subject via the imaging optical system 23 and converts the light into an electrical signal by photoelectric conversion. The image sensor 21 is, for example, a CCD (Charge Coupled Device) sensor or a CMOS (Complementary Metal Oxide Semiconductor) sensor. The image sensor 21 converts the electronic signal from an analog signal to a digital signal by A / D (Analog to Digital) conversion, and outputs an image signal as a digital signal to the image processing unit 22. The image sensor 21 also outputs a frame synchronization signal to the driving circuit 12, and the driving circuit 12 causes the light emitting unit 11 to emit light at a timing according to the frame period of the image sensor 21 based on the frame synchronization signal.

[0020] The image processing unit 22 performs various types of image processing on the image signal output from the image sensor 21. The image processing unit 22 includes an image processor such as a DSP (Digital Signal Processor).

[0021] The control device 3 controls various operations of the distance measuring device 100, such as the light emitting operation of the light emitting device 1 and the imaging operation of the imaging device 2. The control device 3 includes, for example, a central processing unit (CPU), a read only memory (ROM), and a random access memory (RAM).

[0022] The distance measuring unit 31 measures the distance to the subject based on the image signal output from the image sensor 21 and subjected to image processing by the image processing unit 22. The distance measuring unit 31 employs, for example, an STL (Structured Light) method or a ToF (Time of Flight) method as a distance measuring method. The distance measuring unit 31 may further measure the distance between the distance measuring device 100 and the subject for each part of the subject based on the image signal, and specify the three-dimensional shape of the subject.

[0023] FIG. 2 is a cross-sectional view showing a structural example of the distance measuring device 100 according to the first embodiment of the present disclosure. As shown in FIG. 2, the distance measuring device 100 includes the above-mentioned LD chip 41 (an example of the "second substrate" of the present disclosure) and the LDD substrate 42 (an example of the "first substrate" of the present disclosure), a mounting substrate 43, a heat dissipation substrate 44, a correction lens holding portion 45, one or more correction lenses 46 (an example of the "lens" of the present disclosure), and a plurality of bump electrodes 48. In FIG. 2, the X-axis direction and the Y-axis direction correspond to the lateral direction (horizontal direction), and the Z-axis direction corresponds to the longitudinal direction (vertical direction). Also, the arrow direction of the Z-axis corresponds to the upward direction, and the opposite side of the arrow direction corresponds to the downward direction.

[0024] As shown in Fig. 2, the LDD substrate 42 is disposed on a mounting substrate 43 via a heat dissipation substrate 44. Also, the LD chip 41 is disposed on the LDD substrate 42. For example, the LD chip 41 is flip-chip mounted on the LDD substrate 42. The mounting substrate 43 is, for example, a printed circuit board. The image sensor 21 and the image processing unit 22 shown in Fig. 1 are provided on the mounting substrate 43. The heat dissipation substrate 44 is, for example, a ceramic substrate such as an AlN (aluminum nitride) substrate.

[0025] The correction lens holding section 45 is disposed on the heat dissipation substrate 44 so as to surround the LD chip 41, and holds one or more correction lenses 46 above the LD chip 41. These correction lenses 46 are included in the above-mentioned light-emitting side optical system 14 (see FIG. 1). The correction lenses 46 are disposed at positions facing the LDD substrate 42 with the LD chip 41 in between. The light emitted from the light-emitting section 11 (see FIG. 1) in the LD chip 41 is incident on these correction lenses 46 and corrected, and then irradiated onto the subject (see FIG. 1). FIG. 2 shows two correction lenses 46 held by the correction lens holding section 45 as an example of the first embodiment.

[0026] The bump electrodes 48 are provided on at least one of the upper surface of the LDD substrate 42 and the lower surface of the LD chip 41, and electrically connect the LDD substrate 42 and the LD chip 41. The bump electrodes 48 are made of any metal material, such as gold (Au), nickel (Ni), or aluminum (Al).

[0027] The LDD substrate 42 is provided with a light-shielding film 50 (an example of a "light-shielding portion" in the present disclosure) that shields at least a part of the drive circuit 12 from light emitted by the light-emitting portion 11 provided in the LD chip 41. The light-shielding film 50 may be provided on the upper surface 42a of the LDD substrate 42, or may be provided inside the LDD substrate 42.

[0028] In the first embodiment of the present disclosure, a structure in which an LD chip 41 including a VCSEL is flip-chip mounted on an LDD substrate 42 is referred to as a VCSEL-mounted assembly 40.

[0029] FIG. 3 is a block diagram showing a configuration example of the drive circuit 12 according to the first embodiment of the present disclosure. As shown in FIG. 3, the drive circuit 12 includes a driver circuit 60 for driving the light emitting unit 11 (see FIG. 1), a bias circuit 61, a CLK circuit 62, and a temperature information generating unit 63. The bias circuit 61 generates a reference current from a power supply voltage supplied from the power supply circuit 13, and supplies the generated reference current to the driver circuit 60. The CLK circuit 62 generates a clock signal for controlling the light emission timing of the light emitting unit 11, and supplies the generated clock signal to the driver circuit 60. The temperature information generating unit 63 measures the temperature of the LDD substrate 42 to generate a signal including temperature information, and supplies the generated signal to the driver circuit 60. As shown in FIG. 2, since the LD chip 41 is flip-chip mounted on the LDD substrate 42, the temperature of the LDD substrate 42 is correlated with the temperature of the LD chip 41.

[0030] The driver circuit 60 controls the light emission timing of the light-emitting unit 11 based on the supplied clock signal. The driver circuit 60 also corrects the value of the current applied to the light-emitting unit 11 based on a signal supplied from the temperature information generating unit 63. This allows the driver circuit 60 to suppress temperature-related fluctuations in the intensity of the light emitted by the light-emitting unit 11.

[0031] (Specific examples) Next, the structure of the VCSEL mounted assembly 40 in which the LD chip 41 is flip-chip mounted on the LDD substrate 42 will be described in more detail.

[0032] Fig. 4 is a cross-sectional view showing an example of the structure of a VCSEL-mounted body 40 according to the first embodiment of the present disclosure. As shown in Fig. 4, the VCSEL-mounted body 40 includes an LDD substrate 42, an LD chip 41, and bump electrodes 48 that electrically connect the LDD substrate 42 and the LD chip 41. The LDD substrate 42 has an upper surface 42a (an example of "one surface" in the present disclosure) and a lower surface 42b, and the LD chip 41 is flip-chip mounted on the upper surface 42a side via the bump electrodes 48.

[0033] The LDD substrate 42 has a substrate body 421 made of, for example, Si. The upper surface 42a of the LDD substrate 42 is the upper surface of the substrate body 421, and the lower surface 42b of the LDD substrate 42 is the lower surface of the substrate body 421. The substrate body 421 is provided with a driver circuit 60, a bias circuit 61, a CLK circuit 62 (see FIG. 3), and a temperature information generating unit 63 (see FIG. 3). For example, the driver circuit 60 and the bias circuit 61 are provided on the lower surface 42b side of the substrate body 421. The driver circuit 60 and the bias circuit 61 are electrically connected to each other via a wiring layer (not shown) (or at least a part of wiring layers 71 to 73 described later).

[0034] The bias circuit 61 has a well layer 611 , an npn-type bipolar transistor 612 provided in the well layer 611 , and a pnp-type bipolar transistor 613 provided in the well layer 611 .

[0035] Further, the substrate body 421 is provided with a light-shielding film 50, a pad electrode 70, and a plurality of wiring layers 71 to 73. For example, the light-shielding film 50 and the pad electrode 70 are provided on the upper surface 42a of the substrate body 421. The wiring layers 71 to 73 are provided inside the substrate body 421. The pad electrode 70 is located above the driver circuit 60, and a plurality of wiring layers 71 to 73 are provided between the driver circuit 60 and the pad electrode 70. The driver circuit 60 and the pad electrode 70 are electrically connected to each other via the plurality of wiring layers 71 to 73 and a through electrode (not shown) that connects the wiring layers 71 to 73 in the up-down direction (Z-axis direction).

[0036] The light-shielding film 50 is made of a metal having a light-shielding property against infrared rays, such as aluminum (Al) or copper (Cu). The light-shielding film 50 covers the entire area of ​​the bias circuit 61 from the upper surface 42a side of the substrate body 421. The light-shielding film 50 may be provided in the same layer as the pad electrode 70 as shown in FIG. 4, or may be provided in a layer different from the pad electrode 70. When the light-shielding film 50 is provided in the same layer as the pad electrode 70, the light-shielding film 50 and the pad electrode 70 may be formed simultaneously in the same process.

[0037] A bump electrode 48 is provided on the pad electrode 70. The driver circuit 60 is electrically connected to the LD chip 41 via a plurality of wiring layers 71 to 73, the pad electrode 70, and the bump electrode 48. A correction lens 46 (see FIG. 2) is disposed above the LD chip 41.

[0038] (Effects of the First Embodiment) As described above, the distance measuring device 100 according to the first embodiment of the present disclosure includes the LDD substrate 42 having the drive circuit 12, the LD chip 41 having the light emitting unit 11 driven by the drive circuit 12, and the light shielding film 50. The LD chip 41 is flip-chip mounted on the upper surface 42a side of the LDD substrate 42. The light shielding film 50 is provided on the LDD substrate 42, and shields at least a part of the drive circuit 12 (e.g., bias circuit 61) from light (e.g., infrared light) emitted by the light emitting unit 10.

[0039] According to this, even if a part of the infrared rays emitted by the light emitting unit 10 is reflected by the surface of the correcting lens 46 and directed toward the bias circuit 61, the infrared rays are blocked by the light shielding film 50. Even if the LD chip 41 is flip-chip mounted on the upper surface 42a of the LDD substrate 42 and the upper part of the bias circuit 61 is not sealed with molding resin or the like (i.e., in a bare state), the light shielding film 50 prevents the infrared rays from entering the bias circuit 61. The light shielding film 50 can suppress the photovoltaic effect from occurring at the pn junction surface of the elements such as the bipolar transistors 612 and 613 of the bias circuit 61, and can suppress the characteristics of the elements from changing due to the photovoltaic effect. As a result, the light shielding film 50 can reduce the possibility of the drive circuit 12 malfunctioning.

[0040] Among the drive circuit 12, the bias circuit 61 in particular has high sensitivity to light and is large in area. For this reason, in the first embodiment of the present disclosure, it is preferable to shield the bias circuit 61 in particular from light. As described above, the bias circuit 61 generates a reference current, but when the bias circuit 61 is irradiated with infrared light, the photovoltaic effect changes the characteristics of elements such as the bipolar transistors 612 and 613, causing the reference current to fluctuate. If the fluctuation in the reference current is large, the drive circuit 12 is likely to malfunction. By shielding the bias circuit 61 from light, the fluctuation in the reference current can be suppressed, and the possibility of the drive circuit 12 malfunctioning can be reduced.

[0041] (Variation 1) In the above-mentioned embodiment 1, the light-shielding film 50 is arranged in the region overlapping with the bias circuit 61 in the thickness direction (for example, Z-axis direction) of the LDD substrate 42, and the bias circuit 61 is not arranged in the other region. However, the embodiment 1 of the present disclosure is not limited to this. In the embodiment 1 of the present disclosure, the light-shielding film 50 may be arranged in the region overlapping with the driver circuit 60 (see FIG. 3) in the Z-axis direction, the light-shielding film 50 may be arranged in the region overlapping with the CLK circuit 62 (see FIG. 3), or the light-shielding film 50 may be arranged in the region overlapping with the temperature information generating unit 63 (see FIG. 3). As a result, the light-shielding film 50 can prevent infrared rays from entering the driver circuit 60, the CLK circuit 62, and the temperature information generating unit 63.

[0042] The driver circuit 60, the CLK circuit 62, and the temperature information generating unit 63 all have elements including a pn junction surface, such as bipolar transistors and MOS transistors, but the light-shielding film 50 can prevent infrared rays from entering and thereby suppress the photovoltaic effect from occurring at the pn junction surface. As a result, the light-shielding film 50 can suppress changes in the characteristics of elements in the driver circuit 60, the CLK circuit 62, and the temperature information generating unit 63 due to the photovoltaic effect, and can reduce the possibility of the drive circuit 12 malfunctioning.

[0043] It is preferable that the coverage rate of the light-shielding film 50 on the upper surface 42a of the LDD substrate 42 is high. For example, the coverage rate per unit area of ​​the light-shielding film 50 on the upper surface 42a of the LDD substrate 42 is preferably 50% or more, more preferably 65% ​​or more, and even more preferably 80% or more, except for the region where the LD chip 41 is mounted. The light-shielding film 50 may be provided so as to cover the entire upper surface 42a of the LDD substrate 42 except for the region where the LD chip 41 is mounted (i.e., so that the coverage rate per unit area is 100%). An example in which the coverage rate per unit area is 100% except for the region where the LD chip 41 is mounted is shown in FIG. 5 below.

[0044] 5 is a cross-sectional view showing a configuration example of a VCSEL-mounted body 40A according to a first modification of the first embodiment of the present disclosure. As shown in FIG. 5, in the VCSEL-mounted body 40A according to the first modification, the light-shielding film 50 is provided so as to cover the entire upper surface 42a of the LDD substrate 42, except for the region where the LD chip 41 is mounted. With this configuration, the light-shielding film 50 can prevent infrared rays from entering not only the bias circuit 61, but also the driver circuit 60, the CLK circuit 62, and the temperature information generating unit 63. As a result, the light-shielding film 50 can further suppress changes in the characteristics of each element provided on the LDD substrate 42 due to the photovoltaic effect, and can further reduce the possibility of the driver circuit 12 malfunctioning.

[0045] (Variation 2) In the first embodiment of the present disclosure, a part of the wiring layers 71 to 73 may function as a light shielding portion in addition to the light shielding film 50. The wiring layer functioning as a light shielding portion is made of a metal having a light shielding property against infrared rays, such as aluminum (Al) or copper (Cu).

[0046] 6 is a cross-sectional view showing a configuration example of a VCSEL-mounted body 40B according to Modification 2 of the first embodiment of the present disclosure. As shown in FIG. 6, in the VCSEL-mounted body 40B according to Modification 2, for example, a part of the wiring layer 71 is extended to above the bias circuit 61. The bias circuit 61 has a first region R1 that overlaps with the light-shielding film 50 in the thickness direction (e.g., Z-axis direction) of the LDD substrate 42, and a second region R2 that does not overlap with the light-shielding film 50 in the Z-axis direction. The wiring layer 71 covers at least a part of the second region R2. The wiring layer 71 is made of a metal having a light-shielding property against infrared rays, such as aluminum (Al) or copper (Cu).

[0047] In the VCSEL mounting body 40B according to the second modification, the light-shielding film 50 and the wiring layer 71 are misaligned in the horizontal direction. The light-shielding film 50 and the wiring layer 71 in this positional relationship prevent infrared rays from being incident on the bias circuit 61. Therefore, as in the first embodiment, it is possible to suppress changes in the characteristics of the elements due to the photovoltaic effect, and to reduce the possibility of the drive circuit 12 malfunctioning.

[0048] (Variation 3) In the first embodiment of the present disclosure, the bias circuit 61 is preferably disposed at a position away from the outer peripheral side surface 42c of the LDD substrate 42. Fig. 7 is a cross-sectional view showing a configuration example of a VCSEL-mounted body 40C according to a third modification of the first embodiment of the present disclosure. As shown in Fig. 7, in the VCSEL-mounted body 40C according to the third modification, the bias circuit 61 is disposed at a position sufficiently away from the outer peripheral side surface 42c of the LDD substrate 42. For example, the distance d from the outer peripheral side surface 42c of the LDD substrate to the bias circuit 61 is 500 µm or more.

[0049] There is a possibility that a part of the light reflected by the surface of the correcting lens 46 is reflected again by the inner side surface of the correcting lens holding portion 45 (see FIG. 2) or the like, and enters the outer peripheral side surface 42c of the LDD substrate 42. However, in the VCSEL mounting body 40C, the bias circuit 61 is disposed at a position sufficiently distant from the outer peripheral side surface 42c of the LDD substrate 42, so that it is possible to reduce the possibility that the light incident from this side surface 42c will reach the bias circuit 61. This makes it possible to further suppress the characteristics of the bias circuit 61 from being changed due to the photovoltaic effect.

[0050] (Variations 4A and 4B) In the first embodiment of the present disclosure, a through layer made of a light-shielding material may be provided between the outer peripheral side surface 42c of the LDD substrate 42 and the drive circuit 12 (see FIG. 1).

[0051] 8A is a cross-sectional view showing a configuration example of a VCSEL-mounted body 40D according to Modification 4A of the first embodiment of the present disclosure. As shown in FIG. 8A, in the VCSEL-mounted body 40D according to Modification 4A, the LDD substrate 42 has a through layer 51 penetrating the LDD substrate 42 in a thickness direction (e.g., Z-axis direction) of the LDD substrate 42. The through layer 51 is made of a metal having a light blocking property against infrared rays, such as aluminum (Al) or copper (Cu). The through layer 51 is provided between the outer peripheral side surface 42c of the LDD substrate 42 and the bias circuit 61, and is provided in a ring shape along the outer peripheral side surface 42c, for example.

[0052] As described above, a portion of the light reflected on the surface of the correcting lens 46 may be re-reflected on the inner side surface of the correcting lens holding portion 45 (see FIG. 2) and may be incident on the outer peripheral side surface 42c of the LDD substrate 42. However, in the VCSEL mounting body 40D, the bias circuit 61 is shielded by the through layer 51 provided along the outer peripheral side surface 42c, so that it is possible to reduce the possibility that the light incident from the side surface 42c will reach the bias circuit 61. This makes it possible to further suppress the characteristics of the bias circuit 61 from being changed due to the photovoltaic effect.

[0053] 8B is a cross-sectional view showing a configuration example of a VCSEL mounting body 40E according to Modification 4B of Embodiment 1 of the present disclosure. As shown in FIG. 8B, a plurality of through layers 51 may be provided instead of one. For example, two or more through layers 51 may be provided along the outer peripheral side surface 42c. With such a configuration, it is possible to further reduce the possibility that light incident from the side surface 42c will reach the bias circuit 61.

[0054] (Variations 5A and 5B) In the above-described first embodiment, the light-shielding film 50 is made of a metal such as aluminum (Al) or copper (Cu). However, the first embodiment of the present disclosure is not limited to this. The light-shielding film 50 may be made of, for example, a resin.

[0055] 9A is a cross-sectional view showing a configuration example of a VCSEL-mounted body 40F according to Modification 5A of the first embodiment of the present disclosure. As shown in FIG. 9A, the VCSEL-mounted body 40F according to Modification 5A includes a light-shielding film 52 instead of the light-shielding film 50 made of metal. The light-shielding film 52 is made of a resin having a light-shielding property against infrared rays. Even with this configuration, the light-shielding film 52 can prevent infrared rays from entering the bias circuit 61, and can suppress changes in the characteristics of the element due to the photovoltaic effect. As a result, the light-shielding film 52 can reduce the possibility of the drive circuit 12 malfunctioning.

[0056] In addition, in the first embodiment of the present disclosure, as shown in FIG. 9A, the gap between the LDD substrate 42 and the LD chip 41 may be filled with an insulating resin 53. The resin 53 may be called an underfill material. The resin 53 can increase the reliability of the connection between the LDD substrate 42 and the LD chip 41. For example, an epoxy resin can be used as the resin 53.

[0057] In the VCSEL-mounted body 40F according to Modification 5A, the resin 53 and the light-shielding film 52 may have the same composition. Alternatively, the resin 53 and the light-shielding film 52 may be layers formed simultaneously in the same process. This may reduce the number of steps in manufacturing the VCSEL-mounted body 40F, and may reduce manufacturing costs.

[0058] 9B is a cross-sectional view showing a configuration example of a VCSEL mounting body 40G according to Modification 5B of the first embodiment of the present disclosure. As shown in FIG. 9B, the light-shielding film 52 may be provided on the entire upper surface 42a of the LDD substrate 42, except for the region where the LD chip 41 is mounted. With this configuration, the light-shielding film 52 can prevent infrared rays from entering not only the bias circuit 61, but also the CLK circuit 62 and the temperature information generating unit 63, thereby further reducing the possibility of the driver circuit 12 malfunctioning.

[0059] <Embodiment 2> In an embodiment of the present disclosure, the LDD substrate 42 may include a wire bonding pad electrode (hereinafter, WB pad electrode) to which a wire such as a gold wire is connected. An opening is provided on the WB pad electrode to expose the surface of the WB pad electrode, and a wire is connected to the surface of the WB pad electrode through this opening. In an embodiment of the present disclosure, the light-shielding film 50 may cover not only the upper part of the driving circuit 12 but also the periphery of the wire bonding pad electrode.

[0060] Fig. 10 is a plan view showing a structural example of a VCSEL-mounted body 140 according to the second embodiment of the present disclosure. As shown in Fig. 10, the VCSEL-mounted body 140 according to the second embodiment is a structure in which an LD chip 41 including a VCSEL is flip-chip mounted on an LDD substrate 42, similar to the VCSEL-mounted body 40 shown in Fig. 4. For example, in the distance measuring device 100 shown in Fig. 1, the VCSEL-mounted body 140 is disposed on a mounting substrate 43 with a heat dissipation substrate 44 interposed therebetween, in place of the VCSEL-mounted body 40.

[0061] 10, the LDD substrate 42 includes a plurality of WB pad electrodes 110 (one example of a "wire bonding pad electrode" in the present disclosure) provided on the upper surface 42a side of the LDD substrate 42, and a protective film 120 provided on the upper surface 42a side of the LDD substrate 42. The WB pad electrodes 110 are pad electrodes for connecting wires such as gold wires (not shown). The plurality of WB pad electrodes 110 are provided on the outer periphery of the LDD substrate 42 in a plan view from a normal direction (e.g., Z-axis direction) of the upper surface 42a of the LDD substrate 42, and are arranged at regular intervals so as to draw a rectangular frame along the outer periphery of the LDD substrate 42.

[0062] Fig. 11 is an enlarged plan view showing the WB pad electrode 110 and its surrounding area shown in Fig. 10. Fig. 12 is a cross-sectional view showing a configuration example of a VCSEL mounting assembly 40 according to embodiment 2 of the present disclosure. Fig. 12 shows a cross section taken along line AA' in the plan views shown in Figs. 10 and 11. Note that the cross section taken along line BB' in the plan view shown in Fig. 11 has a similar configuration to the cross section taken along line AA' in the plan view shown in Fig. 11.

[0063] 11 and 12, the protective film 120 is provided with an opening H120 that exposes the surface of the WB pad electrode 110. As shown in Fig. 11, in a plan view from the Z-axis direction, the opening H120 is located inside the WB pad electrode 110, and the bottom surface of the opening H120 is the surface of the WB pad electrode 110.

[0064] 11 and 12, a light-shielding film 50 is provided on a protective film 120. An opening H50 is also provided in the light-shielding film 50. The opening H50 provided in the light-shielding film 50 is located above the WB pad electrode 110 and communicates with an opening H120 provided in the protective film 120.

[0065] The WB pad electrode 110 is made of, for example, aluminum (Al) or an Al alloy containing Al. The protective film 120 is made of, for example, a silicon oxide film (SiO2 film) 121 and a silicon nitride film (SiN) 122 provided on the SiO2 film 121. The light-shielding film 50 is made of, for example, titanium (Ti) and gold (Au) provided on the Ti.

[0066] 12, below the WB pad electrode 110, a plurality of (e.g., seven layers) of wirings M1 to M7 are provided, stacked in the Z-axis direction via an interlayer insulating film 130. For example, the wirings M6 and M7 are power lines. The wirings M1 to M5 are signal lines. At least a portion of the wirings M1 to M7 located below the WB pad electrode 110 may be dummy wirings that are not electrically connected to elements such as transistors.

[0067] In the VCSEL mounting body 140 according to the second embodiment, not only the upper part of the drive circuit 12 but also the periphery of the WB pad electrode 110 is covered with the light-shielding film 50. Even if part of the light (e.g., infrared light) emitted by the light-emitting unit is reflected by the surface of the lens and directed toward the periphery of the WB pad electrode 110, this light (disturbance light) is blocked by the light-shielding film 50. As a result, the light-shielding film 50 can suppress the intrusion of light from the periphery of the WB pad electrode 110 into the LDD substrate 42, and the possibility of the drive circuit 12 malfunctioning can be further reduced.

[0068] In the second embodiment, the portion of the light-shielding film 50 that is disposed around the WB pad electrode 110 is an example of the "periphery light-shielding portion" of the present disclosure.

[0069] <Embodiment 3> As described in the second embodiment, an opening H120 that exposes the surface of the WB pad electrode 110 is provided on the WB pad electrode 110, and a wire is connected to the surface of the WB pad electrode 110 through this opening H120. Since the side surface of this opening H120 is exposed from the light-shielding film 50, it may become an inlet of light into the LDD substrate 42. To reduce this possibility, in the embodiment of the present disclosure, the side surface of the opening H120 may be covered with a peripheral light-shielding portion. As such an aspect, configuration examples 1 to 3 of the third embodiment will be described.

[0070] (Configuration example 1) 13 is a cross-sectional view showing a configuration example (configuration example 1) of a VCSEL-mounted body 140A according to embodiment 3 of the present disclosure. As shown in Fig. 13, in the VCSEL-mounted body 140A, a light-shielding resin 210 (an example of a "peripheral light-shielding portion" of the present disclosure) is applied to the periphery of the opening H120.

[0071] The light-shielding resin 210 is an insulating resin. The light-shielding resin 210 has a light-shielding property against the light emitted by the light-emitting section 11. For example, the light-shielding resin 210 is a dark-colored or black insulating resin, and has a light-shielding property against the infrared light emitted by the light-emitting section 11. The light-shielding resin 210 may be a resin called a black matrix.

[0072] As shown in FIG. 13, the light-shielding resin 210 continuously covers the light-shielding film 50, the side surface s2 of the opening H50 provided in the light-shielding film 50, the protective film 120 exposed from below the light-shielding film 50, the side surface s1 of the opening H120 provided in the protective film 120, and the WB pad electrode 110 located in the vicinity of the side surface s1 of the opening H120.

[0073] Examples of entrances for light (disturbance light) from the opening H120 into the LDD substrate 42 include the interface edge between the WB pad electrode 110 and the protective film 120, and the side surface s1 of the opening H120. Examples of entrances for disturbance light from the opening H50 into the LDD substrate 42 include the interface edge between the protective film 120 and the light-shielding film 50. The light-shielding resin 210 covers and blocks these entrances.

[0074] In the VCSEL mounting body 140A according to Configuration Example 1 of the third embodiment, the light-shielding resin 210 covers the side surfaces s1 and s2 of the openings H120 and H50. This allows the light-shielding resin 210 to prevent disturbance light from entering the LDD substrate 42 through the openings H120 and H50, and can shield at least a part of the drive circuit 12 (for example, the bias circuit 61) from the disturbance light. This allows the light-shielding resin 210 to further reduce the possibility of the drive circuit 12 malfunctioning.

[0075] It is preferable that the light-shielding resin 210 covers the entire side surface s1 of the opening H120, which makes it easier for the light-shielding resin 210 to block intrusions of ambient light that exist on the side surface s1 of the opening H120, etc.

[0076] Note that the configuration example 1 of the third embodiment is not limited to the above. The light-shielding resin 210 may be arranged to cover a part of the side surface s1 of the opening H120, rather than the entire side surface s1. For example, the light-shielding resin 210 may be applied to cover the side surface s1 of the opening H120 that is closer to the drive circuit 12, and not cover the side surface farther from the drive circuit 12. In this case, it is possible that the intrusion of disturbance light into the drive circuit 12 can be suppressed, compared to a case in which the side surface closer to the drive circuit 12 is not covered with the light-shielding resin 210.

[0077] (Configuration example 2) 14 is a cross-sectional view showing a configuration example (configuration example 2) of a VCSEL-mounted body 140B according to embodiment 3 of the present disclosure. In the VCSEL-mounted body 140B shown in FIG. 14, the WB pad electrode 110 has a thick film portion 111 (an example of a "peripheral light-shielding portion" in the present disclosure) with an increased thickness inside the opening H120. For example, the WB pad electrode 110 has a thick film portion 111 located inside the opening H120 and another portion 112 located outside the opening H120. The thick film portion 111 and the other portion 112 are made of the same material and are integrally formed. In the VCSEL-mounted body 140B, the thick film portion 111 of the WB pad electrode 110 covers and blocks the side surface s1 of the opening H120, which is an inlet for disturbance light, and the interface edge between the WB pad electrode 110 and the protective film 120.

[0078] As a result, the thick film portion 111 of the WB pad electrode 110 can prevent disturbance light from entering the LDD substrate 42 through the opening H120, and can shield at least a part of the drive circuit 12 (for example, the bias circuit 61) from the disturbance light. As a result, the thick film portion 111 can further reduce the possibility of the drive circuit 12 malfunctioning.

[0079] It is preferable that the thick film portion 111 covers the entire side surface s1 of the opening portion H120, which makes it easier for the thick film portion 111 to block the intrusion openings of ambient light that exist on the side surface s1 of the opening portion H120, etc.

[0080] Note that the configuration example 2 of the embodiment 3 is not limited to the above. The thick film portion 111 may be arranged to cover a part of the side surface s1 of the opening H120, rather than the entire side surface s1. For example, the thick film portion 111 may be formed to cover the side surface s1 of the opening H120 that is closer to the drive circuit 12, and not cover the side surface farther from the drive circuit 12. In this case, it is possible that the intrusion of ambient light into the drive circuit 12 can be suppressed, compared to a case in which the side surface closer to the drive circuit 12 is not covered by the thick film portion 111.

[0081] (Configuration example 3) Fig. 15 is a cross-sectional view showing a configuration example (configuration example 3) of a VCSEL-mounted body 140C according to embodiment 3 of the present disclosure. The VCSEL-mounted body 140C shown in Fig. 15 includes a sidewall 211 arranged on a side surface s1 of an opening H120 provided in the protective film 120, and a sidewall 212 arranged on a side surface s2 of an opening H50 provided in the light-shielding film 50. The sidewalls 211 and 212 are each an example of a "periphery light-shielding portion" in the present disclosure.

[0082] The sidewalls 211 and 212 are made of insulating resin. The sidewalls 211 and 212 have a light-shielding property against light emitted by the light-emitting section 11. For example, the sidewalls 211 and 212 are made of a dark-colored or black resin, and have a light-shielding property against infrared rays emitted by the light-emitting section 11. The resin constituting the sidewalls 211 and 212 may be made of a resin called a black matrix.

[0083] The side walls 211 and 212 are formed, for example, by applying an insulating dark or black resin to the upper surface 42a of the LDD substrate 42 in which the openings H120 and H50 are formed, and then etching back the applied resin.

[0084] In the VCSEL-mounted body 140C, the sidewall 211 covers and blocks the side surface s1 of the opening H120, which serves as an inlet for disturbance light, and the interface end between the WB pad electrode 110 and the protective film 120. Similarly, in the VCSEL-mounted body 140C, the sidewall 212 covers and blocks the interface end between the protective film 120 and the light-shielding film 50, which serves as an inlet for disturbance light. As a result, the sidewalls 211 and 212 can prevent disturbance light from entering the LDD substrate 42 through the openings H120 and H50, and can shield at least a part of the drive circuit 12 (for example, the bias circuit 61) from the disturbance light. As a result, the sidewalls 211 and 212 can further reduce the possibility of the drive circuit 12 malfunctioning.

[0085] The sidewall 211 preferably covers the entire side surface s1 of the opening H120. This makes it easier for the sidewall 211 to block the intrusion of disturbance light that exists on the side surface s1 of the opening H120, etc. Similarly, the sidewall 212 preferably covers the entire side surface s2 of the opening H50. This makes it easier for the sidewall 211 to block the intrusion of disturbance light that exists near the side surface s2 of the opening H50.

[0086] Note that the third configuration example of the third embodiment is not limited to the above. For example, only one of the side walls 211 and 212 may be provided.

[0087] Furthermore, the sidewall 211 may be disposed so as to cover a part of the side surface s1 of the opening H120, rather than the entirety of the side surface s1. For example, the sidewall 211 may be formed so as to cover the side surface s1 of the opening H120 that is closer to the drive circuit 12, and not cover the side surface that is farther from the drive circuit 12. In this case, it is possible that the intrusion of ambient light into the drive circuit 12 can be suppressed, compared to a case in which the side surface closer to the drive circuit 12 is not covered by the sidewall 211.

[0088] Similarly, the sidewall 212 may be disposed so as to cover not the entire side surface s2 of the opening H50 but a part of the side surface s2. In this case, the sidewall 212 may be formed so as to cover the side surface s2 of the opening H50 that is closer to the drive circuit 12 and not to cover the side surface farther from the drive circuit 12. In this case, it is possible that the intrusion of disturbance light into the drive circuit 12 can be suppressed, compared to a case in which the side surface closer to the drive circuit 12 is not covered by the sidewall 212.

[0089] <Embodiment 4> In the embodiment of the present disclosure, the peripheral light shielding portion may be disposed so as to shield the propagation path of disturbance light entering through the opening H120, etc. As such an embodiment, configuration examples 1 to 4 of the fourth embodiment are shown.

[0090] (Configuration example 1) Fig. 16 is a cross-sectional view showing a configuration example (configuration example 1) of a VCSEL mounting body 140D according to embodiment 4 of the present disclosure. Fig. 17 is an enlarged plan view showing the WB pad electrode 110 and its surrounding area shown in Fig. 16. The cross section shown in Fig. 16 is a cross section taken along line AA' in the plan view shown in Fig. 17. Note that the cross section taken along line BB' in the plan view shown in Fig. 17 has a similar configuration to the cross section taken along line AA' in the plan view shown in Fig. 17.

[0091] 16, at least a part of the disturbance light entering through the opening H120 propagates through the interface between the WB pad electrode 110 and the protective film 120 and through the SiO2 film 121 constituting the protective film 120. In the VCSEL mounting body 140D, an opaque member 221 (an example of the "periphery light shielding portion" of the present disclosure) is disposed between the WB pad electrode 110 and the protective film 120, blocking the propagation path of the disturbance light. The opaque member 221 absorbs and attenuates the disturbance light propagating through the propagation path.

[0092] The opaque member 221 is made of, for example, titanium nitride (TiN). TiN is formed by depositing a film in a semiconductor manufacturing process such as CVD (Chemical Vapor Deposition) or sputtering, and patterning the film using photolithography technology.

[0093] It is preferable that the opaque member 221 is in contact with the SiN film 122. This allows the opaque member 221 to divide the SiO2 film 121 on the WB pad electrode 110, and absorb and attenuate disturbance light propagating through the SiO2 film 121. For example, after the opaque member 221 is formed on the WB pad electrode 110, the SiO2 film 121 is formed on the LDD substrate 42, the CMP process is performed on the surface of the SiO2 film 121 to expose the surface of the opaque member 221, and then the SiN film 122 is formed, whereby the opaque member 221 can be brought into contact with the SiN film 122.

[0094] In the VCSEL mounting body 140D according to the fourth embodiment, the opaque member 221 blocks the propagation path of the disturbance light, thereby blocking at least a part of the drive circuit 12 (for example, the bias circuit 61) from the disturbance light. This allows the opaque member 221 to further reduce the possibility of the drive circuit 12 malfunctioning. 17, the opaque member 221 is preferably provided continuously so as to surround the opening H120 from the outside in a plan view in the Z-axis direction, which makes it easier for the opaque member 221 to block the propagation path of disturbance light.

[0095] Note that the configuration example 1 of the fourth embodiment is not limited to the above. The opaque member 221 may be provided intermittently so as to surround the opening H120 from the outside in a cross-sectional view from the axial direction. Also, the opaque member 221 does not necessarily have to surround the opening H120.

[0096] Fig. 18 is a plan view showing a modified example of the arrangement of the opaque members 221. As shown in Fig. 18, the opaque members 221 may be arranged on the inside and outside of a rectangular frame in which a plurality of WB pad electrodes 110 are arranged side by side, as viewed in a plan view from the Z-axis direction. Even with this configuration, the opaque members 221 can block the propagation path of disturbance light.

[0097] Note that the configuration example 1 of the fourth embodiment is not limited to the above. The opaque member 221 may be arranged only on one of the inside and outside of a rectangular frame in which a plurality of WB pad electrodes 110 are arranged side by side in a plan view from the Z-axis direction. For example, the opaque member 221 may be arranged only on the inside of the rectangular frame, which is the side closer to the drive circuit 12. In this case, it is possible that the propagation of disturbance light to the drive circuit 12 can be suppressed, compared to a case in which the opaque member 221 is arranged only on the outside of the rectangular frame.

[0098] (Configuration example 2) Fig. 19 is a cross-sectional view showing a configuration example (configuration example 2) of a VCSEL-mounted body 140E according to embodiment 4 of the present disclosure. In the VCSEL-mounted body 140E shown in Fig. 19, an anti-reflection film 222 (an example of a "peripheral light shielding portion" of the present disclosure) is provided between the WB pad electrode 110 and the protective film 120 to block the propagation path of disturbance light. The anti-reflection film 222 absorbs and attenuates the disturbance light that propagates while being reflected between the WB pad electrode 110 and the SiN film 122, thereby suppressing the propagation of the disturbance light.

[0099] The anti-reflection film 222 is made of, for example, a photoresist, and is formed by depositing the film in a semiconductor manufacturing process such as CVD or sputtering, and patterning the film using a photolithography technique.

[0100] In the VCSEL mounting body 140E according to the second configuration example of the fourth embodiment, the antireflection film 222 blocks the propagation path of the disturbance light, thereby blocking at least a part of the drive circuit 12 (for example, the bias circuit 61) from the disturbance light. This makes it possible for the antireflection film 222 to further reduce the possibility of the drive circuit 12 malfunctioning.

[0101] Moreover, it is preferable that the antireflection film 222 is provided continuously so as to surround the opening H120 from the outside in a plan view from the Z-axis direction, like the opaque member 221 shown in Fig. 17. This makes it easier for the antireflection film 222 to block the propagation path of disturbance light.

[0102] Note that the configuration example 1 of the fourth embodiment is not limited to the above. The antireflection film 222 may be intermittently provided so as to surround the opening H120 from the outside in a cross-sectional view from the axial direction. Also, the antireflection film 222 does not necessarily have to surround the opening H120.

[0103] 18 may also be applied to configuration example 2 of embodiment 4. In Fig. 18, the opaque member 221 may be replaced with an antireflection film 222. In plan view from the Z-axis direction, the antireflection film 222 may be disposed on at least one of the inside and outside of a rectangular frame formed by a plurality of WB pad electrodes 110. Even in this case, the antireflection film 222 can block the propagation path of disturbance light.

[0104] (Configuration example 3) Fig. 20 is a cross-sectional view showing a configuration example (configuration example 3) of a VCSEL mounting body 140F according to embodiment 4 of the present disclosure. The right end of the right-hand view of Fig. 20 is the outer circumferential end of the LDD substrate 42. The left-hand view of Fig. 20 is an enlarged cross-sectional view showing a dummy wiring layer DML for light shielding (an example of a "peripheral light shielding portion" of the present disclosure) provided on the LDD substrate 42.

[0105] 20, a guard ring GR is provided between the WB pad electrode 110 and the outer peripheral edge 42E of the LDD substrate 42 to prevent the intrusion of moisture and impurities. The guard ring GR is made up of a metal layer formed in the same layer as the wirings M1 to M7 and the WB pad electrode 110. The metal layer constituting the guard ring GR is a dummy wiring or dummy electrode that is not electrically connected to elements such as transistors.

[0106] When disturbance light propagates through the interface between the WB pad electrode 110 and the protective film 120 or through the SiO2 film 121 constituting the protective film 120, at least a part of the disturbance light may pass around the WB pad electrode 110 and further propagate through the LDD substrate 42. In consideration of this possibility, in the VCSEL mounting body 140F, a dummy wiring layer DML for light shielding is arranged on the periphery of the WB pad electrode 110 and the area immediately below it. For example, the dummy wiring layer DML is arranged between the WB pad electrode 110, the area immediately below it, and the guard ring GR. The dummy wiring layer DML may be arranged on the entire periphery of the WB pad electrode 110 and the area immediately below it, or may be arranged on a part of the periphery of the WB pad electrode 110.

[0107] In addition, the light-shielding dummy wiring layer DML has multiple dummy wirings arranged to overlap each other in order to block disturbance light. For example, in the left diagram of Fig. 20, the dummy wiring DM7 and the dummy wiring DM6 are metal wiring layers formed in the same layer as the power wiring M7 and M6 (see Fig. 12). The dummy wiring DM5 and DM4 are metal wiring layers formed in the same layer as the signal wiring M5 and M4 (see Fig. 12). The dummy wirings DM7, DM6, DM5, and DM4 are not electrically connected to elements such as transistors.

[0108] In the Z-axis direction, the dummy wiring DM7 and the dummy wiring DM6 overlap each other so that the dummy wiring DM6 (an example of the "n-th layer dummy wiring" in this disclosure) overlaps the inter-wiring space sp7 of the dummy wiring DM7 (an example of the "n+m-th layer dummy wiring" in this disclosure). As a result, even if ambient light passes through the inter-wiring space sp7 of the dummy wiring DM7, the light that passes through the inter-wiring space sp7 is reflected by the dummy wiring DM6 located beyond it and attenuated.

[0109] Similarly, the dummy wiring DM5 and the dummy wiring DM4 overlap each other so that the dummy wiring DM4 (an example of the "nth layer dummy wiring" in this disclosure) overlaps the inter-wiring space sp5 of the dummy wiring DM5 (an example of the "n+mth layer dummy wiring" in this disclosure). As a result, even if ambient light passes through the inter-wiring space sp5 of the dummy wiring DM5, the light that passes through the inter-wiring space sp5 is reflected by the dummy wiring DM4 located beyond it and is attenuated.

[0110] As a result, the dummy wiring layer DML can block the propagation path of the disturbance light. The dummy wiring layer DML can suppress the propagation of the disturbance light, and can block at least a part of the drive circuit 12 (for example, the bias circuit 61) from the disturbance light. As a result, the dummy wiring layer DML can further reduce the possibility that the drive circuit 12 will malfunction.

[0111] As described above, the overlapping dummy wirings are preferably adjacent to each other in the thickness direction of the LDD substrate 42, such as the dummy wirings DM7 and DM6, or the dummy wirings DM5 and DM4. That is, the m in the n+m layer is preferably 1. This makes it possible to reduce the diffraction of disturbance light transmitted through the space between the wirings, and more effectively suppress the propagation of disturbance light.

[0112] 18 may also be applied to configuration example 3 of embodiment 4. In FIG. 18, the opaque member 221 may be replaced with a dummy wiring layer DML. In plan view from the Z-axis direction, the dummy wiring layer DML may be disposed at least on either the inside or the outside of a rectangular frame formed by a plurality of WB pad electrodes 110. Even in this case, the dummy wiring layer DML can block the propagation path of disturbance light.

[0113] (Configuration Example 4) Fig. 21 is a cross-sectional view showing a configuration example (configuration example 4) of a VCSEL-mounted body 140G according to embodiment 4 of the present disclosure. As shown in Fig. 21, in the VCSEL-mounted body 140F, a light-shielding trench isolation 230 (an example of a "peripheral light-shielding portion" of the present disclosure) is arranged on the periphery of the WB pad electrode 110 and the area immediately below it.

[0114] The trench isolation 230 has a trench 231 provided in the interlayer insulating film 130 and a buried material 232 provided in the trench 231. The buried material 232 is made of a material capable of absorbing or reflecting disturbance light, such as polysilicon, a metal, or a low dielectric constant material (low-K material).

[0115] As a result, the trench isolation 230 can block the propagation path of the disturbance light and suppress the propagation of the disturbance light. The trench isolation 230 can block at least a part of the drive circuit 12 (for example, the bias circuit 61) from the disturbance light, so that it is possible to further reduce the possibility of the drive circuit 12 malfunctioning.

[0116] (Other embodiments) As described above, the present disclosure has been described by the embodiments and modified examples, but the descriptions and drawings forming a part of this disclosure should not be understood as limiting the present disclosure. From this disclosure, various alternative embodiments, examples, and operation techniques will become apparent to those skilled in the art. For example, the light emitted by the light-emitting unit 11 is not limited to infrared light. The light emitted by the light-emitting unit 11 may be visible light or ultraviolet light. In addition, the light-shielding unit of the present disclosure may have both the light-shielding film 50 and the through layer 51. In this way, it goes without saying that the present technology includes various embodiments and the like that are not described here. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the above-mentioned embodiments and modified examples. In addition, the effects described in this specification are merely examples and are not limited, and other effects may also be present.

[0117] The present disclosure can also be configured as follows. (1) A first substrate having a driving circuit; a second substrate having a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; a light shielding portion provided on the first substrate and configured to shield at least a portion of the drive circuit from light emitted by the light emitting portion. (2) the drive circuit has a bias circuit that applies a current to the light-emitting unit, The electronic device according to (1), wherein the light shielding portion shields the bias circuit from the light. (3) The light blocking portion is a light-shielding film formed of a material having a light-shielding property against the light and provided on one surface of the first substrate; The electronic device according to (1) or (2), wherein the light-shielding film covers at least a part of the driving circuit. (4) The electronic device according to (3), wherein the light-shielding film is provided so as to cover the entire one surface of the first substrate except for an area where the second substrate is mounted. (5) The first substrate is a wiring layer provided in a layer different from the light-shielding film in a thickness direction of the first substrate and made of a material having a light-shielding property against the light, The drive circuit includes: a first region overlapping the light-shielding film in a thickness direction of the first substrate; a second region that does not overlap with the light-shielding film in a thickness direction of the first substrate, The electronic device according to (3), wherein the wiring layer covers at least a portion of the second region. (6) The electronic device according to any one of (1) to (5), wherein the distance from the outer circumferential side surface of the first substrate to the driving circuit is 500 μm or more. (7) The light blocking portion is The electronic device described in any one of (1) to (6), further comprising a through layer made of a material having a light-blocking property against the light and penetrating the first substrate in a thickness direction of the first substrate. (8) The electronic device according to (7), wherein the through layer is provided in a ring shape along an outer periphery of the first substrate. (9) The electronic device according to any one of (1) to (8), wherein the light emitting unit has a VCSEL. (10) The electronic device according to any one of (1) to (9), wherein the light is infrared light. (11) The electronic device according to any one of (1) to (10), further comprising a lens that is disposed opposite the first substrate across the second substrate and into which the light is incident. (12) The first substrate is a wire bonding pad electrode provided on one surface of the first substrate; a protective film provided on one surface side of the first substrate, the protective film having an opening for exposing a surface of the wire bonding pad electrode; The light blocking portion is The electronic device according to any one of (1) to (11), further comprising a peripheral light shielding portion that is light-shielding to the light and is disposed around the wire bonding pad electrode. (13) The electronic device according to (12), wherein the peripheral light shielding portion covers a side surface of the opening. (14) The electronic device according to (12), wherein the peripheral light shielding portion is disposed between the wire bonding pad electrode and the protective film. (15) The electronic device according to (12), wherein the peripheral light shielding portion is disposed on an outer periphery of the wire bonding pad electrode. (16) The peripheral light shielding portion is a dummy wiring layer in which a plurality of wirings are stacked in a thickness direction of the first substrate via an insulating film; The electronic device described in (15), wherein the nth layer dummy wiring and the n+mth layer dummy wiring overlap each other so that the space between the nth layer dummy wiring (n is an integer greater than or equal to 1) included in the dummy wiring layer and the n+mth layer dummy wiring (m is an integer greater than or equal to 1) included in the dummy wiring layer overlap in the thickness direction of the first substrate. (17) The peripheral light shielding portion is A trench provided in the first substrate; A filling material is embedded in the trench. (18) A first substrate having a driving circuit; a second substrate having a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; a peripheral light-shielding portion having a light-shielding property against the light emitted by the light-emitting portion, The first substrate is a wire bonding pad electrode provided on one surface of the first substrate; a protective film provided on one surface side of the first substrate, the protective film having an opening for exposing a surface of the wire bonding pad electrode; The peripheral light shielding portion is disposed around the wire bonding pad electrode. [Explanation of symbols]

[0118] 1 Light emitting device 2. Imaging device 3. Control device 11 Light emitting part 12 Drive circuit 13 Power circuit 14 Light-emitting optical system 21 Image Sensor 22 Image processing section 23 Imaging optical system 31 Ranging section 40, 40A, 40B, 40C, 40D, 40E, 40F, 40G, 140A, 140B, 140C, 140D, 140E, 140F, 140G VCSEL mounting body (structure) 41 Laser Diode Chip 42 LDD board 42a Top side 42b Bottom side 43 Mounting Board 44 Heat dissipation board 45 Correction lens holder 46 Corrective Lenses 48 Bump Electrode 50, 52 Light-shielding film 51 Penetrating Layer 53 Resin 60 Driver circuit 61 Bias circuit 62 CLK circuit 63 Temperature information generation section 70 Pad Electrode 71, 72, 73 wiring layer 100 Rangefinder 110 WB Pad Electrode 111 Thick film section 112 Other parts 120 Protective film 121 Silicon oxide film (SiO2 film) 122 Silicon nitride film (SiN) 130 Interlayer insulating film 210 Light-shielding resin 211, 212 Sidewall 221 Opaque materials 222 Anti-reflection coating 230 Trench Isolation 231 Trench 232 Buried materials 421 Board body 611 Well Layer 612, 613 Bipolar transistors DM4, DM5, DM6, DM7 Dummy wiring DML Dummy wiring layer GR Guard Ring H50, H120 opening M1, M2, M3, M4, M5, M6, M7 wiring s1, s2 side sp5, sp7 wire spacing

Claims

1. A first substrate having a drive circuit; a second substrate having a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; a light shielding portion provided on the first substrate and configured to shield at least a portion of the drive circuit from light emitted by the light emitting portion; The light blocking portion is The electronic device further includes a through layer that is made of a material that blocks light and that passes through the first substrate in a thickness direction of the first substrate.

2. The electronic device according to claim 1 , wherein the through layer is provided in a ring shape along an outer periphery of the first substrate.

3. A first substrate having a drive circuit; a second substrate having a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; a light shielding portion provided on the first substrate and configured to shield at least a portion of the drive circuit from light emitted by the light emitting portion; The first substrate is a wire bonding pad electrode provided on one surface side of the first substrate; a protective film provided on one surface side of the first substrate, the protective film having an opening for exposing a surface of the wire bonding pad electrode; The light blocking portion is a peripheral light shielding portion that has a light shielding property against the light and is disposed around the wire bonding pad electrode; The peripheral light shielding portion covers a side surface of the opening.

4. A first substrate having a drive circuit; a second substrate having a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; a light shielding portion provided on the first substrate and configured to shield at least a portion of the drive circuit from light emitted by the light emitting portion; The first substrate is a wire bonding pad electrode provided on one surface side of the first substrate; a protective film provided on one surface side of the first substrate, the protective film having an opening for exposing a surface of the wire bonding pad electrode; The light blocking portion is a peripheral light shielding portion that has a light shielding property against the light and is disposed around the wire bonding pad electrode; The peripheral light shielding portion is a dummy wiring layer in which a plurality of wirings are stacked in a thickness direction of the first substrate via an insulating film; an nth layer dummy wiring and an n+mth layer dummy wiring overlap each other so that the space between the nth layer dummy wiring (n is an integer greater than or equal to 1) included in the dummy wiring layer and the n+mth layer dummy wiring (m is an integer greater than or equal to 1) included in the dummy wiring layer overlap in the thickness direction of the first substrate.

5. A first substrate having a drive circuit; a second substrate having a light-emitting unit driven by the drive circuit and mounted on one surface side of the first substrate; a light shielding portion provided on the first substrate and configured to shield at least a portion of the drive circuit from light emitted by the light emitting portion; The first substrate is a wire bonding pad electrode provided on one surface side of the first substrate; a protective film provided on one surface side of the first substrate, the protective film having an opening for exposing a surface of the wire bonding pad electrode; The light blocking portion is a peripheral light shielding portion that has a light shielding property against the light and is disposed around the wire bonding pad electrode; the peripheral light shielding portion is disposed on an outer periphery of the wire bonding pad electrode, The peripheral light shielding portion is A trench provided in the first substrate; and a filling material filled in the trench.

6. the drive circuit has a bias circuit that applies a current to the light-emitting unit, The electronic device according to claim 1 , wherein the light shielding portion shields the bias circuit from the light.

7. The light blocking portion is a light-shielding film formed of a material having a light-shielding property against the light and provided on one surface of the first substrate; The electronic device according to claim 1 , wherein the light-shielding film covers at least a part of the driving circuit.

8. The electronic device according to claim 7 , wherein the light-shielding film is provided so as to cover the entire one surface of the first substrate except for an area on which the second substrate is mounted.

9. The first substrate is a wiring layer provided in a layer different from the light-shielding film in a thickness direction of the first substrate and made of a material having a light-shielding property against the light, The drive circuit includes: a first region overlapping the light-shielding film in a thickness direction of the first substrate; a second region that does not overlap with the light-shielding film in a thickness direction of the first substrate, The electronic device according to claim 7 , wherein the wiring layer covers at least a portion of the second region.

10. The electronic device according to claim 1 , wherein a distance from a side surface of an outer periphery of the first substrate to the drive circuit is 500 μm or more.

11. The electronic device according to claim 1 , wherein the light emitting unit comprises a VCSEL.

12. The electronic device according to claim 1 , wherein the light is infrared light.

13. The electronic device according to claim 1 , further comprising a lens that is disposed opposite the first substrate with the second substrate therebetween and into which the light is incident.

14. The first substrate is a wire bonding pad electrode provided on one surface side of the first substrate; a protective film provided on one surface side of the first substrate, the protective film having an opening for exposing a surface of the wire bonding pad electrode; The light blocking portion is The electronic device according to claim 1 , further comprising a peripheral light shielding portion that has a light shielding property against the light and is disposed around the wire bonding pad electrode.

15. The electronic device according to claim 14 , wherein the peripheral light shielding portion is disposed between the wire bonding pad electrode and the protective film.

16. The electronic device according to claim 14 , wherein the peripheral light shielding portion is disposed on an outer periphery of the wire bonding pad electrode.

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