Photonic device comprising a laser source and means for managing heat dissipation - Patents.com

Abstract

The present invention relates to a photonic device, and more particularly to a photonic device comprising a heterogeneous laser source and heat dissipation means configured to dissipate the heat liable to be emitted by the laser source. More particularly, the heat dissipation means implement a heat transfer layer and a heat transfer element arranged to interact with contact pads accessible on the front face of the photonic device, with this in mind, the heat transfer layer is made of an electrically insulating material and is in contact with either or both of the contact pads, while the heat transfer element is arranged in exclusive contact with the heat transfer layer.

Description

[Technical field]

[0001] The present invention relates to the fields of microelectronics, optics, electro-optics and photonics, and in particular to a photonic device provided with at least one III-V semiconductor laser source integrated on a silicon substrate and provided with heat dissipation means, the configuration allowing a more efficient heat dissipation than configurations known to the person skilled in the art.

[0002] The invention proposes a device for supplying power to one or more lasers integrated on a support, for example made of silicon, and improving the dissipation of the laser's heat towards a heat sink. [Background technology]

[0003] Document 1 cited at the end of this specification discloses a heterogeneous laser device 1. This device 1 comprises, as shown in Figure 1, a support substrate 2, in particular made of silicon, from a rear face 1B to a front face 1A, on whose main face 3 a photonic layer 4 is placed.

[0004] In particular, the photonic layer 4 includes at least one layer of dielectric material encapsulating a waveguide 5 and a photonic stack 6 formed from multiple layers of III-V semiconductor material structured within a second waveguide 5. More specifically, the photonic stack 6 and the waveguide 5 are optically coupled to form a heterogeneous laser source.

[0005] More specifically, the photonic layer 4 includes a stack of three layers, designated a first layer 7, a second layer 8, and a third layer 9, respectively, from the major surface 3, as shown in Figure 1. In this regard, the waveguide 5 may be disposed within the first layer 7, flush with an interface formed between the first layer 7 and the second layer 8, while the photonic stack 6 may be disposed within the third layer 9, coincident with the waveguide 5, and flush with an interface formed between the second layer 8 and the third layer 9.

[0006] Furthermore, the device 1 shown in FIG. 1 also comprises interconnection means provided with contact pads 10A and 10B accessible from the front side 1A and electrically connected to the photonic stack 6 by connection vias 10A and 10B extending within the photonic layer 4, more specifically within the third layer 9.

[0007] Thus, as soon as a voltage is applied to each of the contact pads, the photonic stack can emit laser radiation, which is guided in the waveguide 5 and the photonic stack 6 and, depending on the configuration of the device 1, can be injected into an optical fiber or into another photonic device via coupling means formed in the device 1.

[0008] Also, in order to ensure optimal confinement of the laser radiation within the waveguide and thus limit optical losses, the photonic layers are generally formed from dielectric layers 7, 9 of relatively large thickness, for example of the order of 800 nm or more.

[0009] However, during operation, the photonic stack 6 undergoes heating which, if not controlled, can affect the performance of the device 1, and more particularly the performance of the laser source. In this respect, the dielectric layers forming the photonic layers constitute an obstacle to heat dissipation, thus increasing this heating.

[0010] Document 2, cited at the end of this specification, also proposes a heterogeneous laser device. In particular, this laser device comprises (according to FIG. 9 of document 2) a silicon substrate on one side of which a layer of silicon dioxide, a layer of silicon and a photonic stack are located in that order. The photonic stack as proposed in document 1 is formed of several layers of III-V semiconductor materials structured in a waveguide called a laser guide. In this respect, the laser guide is coupled to the waveguide formed in the silicon layer. This device also comprises heat dissipation means configured to dissipate heat that may be generated by the photonic stack. More specifically, said means comprise a bridge of polycrystalline silicon formed along the photonic stack and configured to dissipate the heat generated by the photonic stack towards the silicon substrate.

[0011] Reference 3 cited at the end of this specification proposes another architecture for controlling heat dissipation. More specifically, as shown in Fig. 4(j) of Reference 3, a heterogeneous laser device includes a thermal bridge made of metal that thermally connects the silicon substrate with the contact pads of the photonic stack.

[0012] Finally, document 4 cited at the end of this specification also discloses a photonic device provided with heat dissipation means arranged to dissipate heat generated by the photonic stack. In particular, the photonic stack is formed from several layers of III-V semiconductor materials structured in a waveguide called a laser guide. In this regard, the laser guide is coupled with the waveguide formed along said laser guide. In the proposed architecture, the heat dissipation means comprise a metal level encapsulated in a dielectric layer on one side of the support substrate, making it possible to dissipate the heat generated by the photonic stack towards the support substrate.

[0013] Nevertheless, the efficiency of the solutions proposed in these documents remains limited.

[0014] Accordingly, one object of the present invention is to propose a heterogeneous laser device provided with heat dissipation means having improved efficiency with respect to solutions known from the prior art.

Prior Art Documents

Patent Documents

[0015]

Patent Document 1

Non-Patent Documents

[0016]

Non-Patent Document 1

Non-Patent Document 2

Non-Patent Document 3

Summary of the Invention

[0017] The invention relates to a photonic device comprising a photonic chip and a support substrate, the photonic chip comprising a support layer and a photonic layer resting on a main surface of the support layer with its surface referred to as the lower surface, said photonic layer comprising at least one dielectric material encapsulating at least one laser source formed by a waveguide and a photonic stack optically coupled to one another, the photonic stack being made of III-V semiconductor material, the photonic chip also comprising first and second metal pads having first and second surfaces respectively, the first and second surfaces being accessible by a top surface of the photonic layer opposite the lower surface and being electrically connected to the photonic stack by a connection via extending into the photonic layer, the first and second pads being configured to allow the circulation of an electric current in the photonic stack in order to control the emission of laser radiation by the laser source, the photonic device comprising: - first heat dissipation means configured to dissipate heat that can be emitted by the laser source, the first means comprising a heat transfer layer and a heat transfer element in thermal contact with the heat transfer layer, the heat transfer layer comprising an electrically insulating material at least partially overlapping at least one of the first and second surfaces; - connecting means configured to electrically connect the first pad and the second pad with first terminals and second terminals arranged on either the support substrate or the heat transfer layer.

[0018] According to one embodiment, the heat transfer layer is in contact with the first pad and the second pad.

[0019] According to one embodiment, the heat transfer layer is made of a material, referred to as a heat transfer material, having a thermal conductivity of 20 W / m / K or more, the heat transfer layer advantageously comprising at least one of the materials chosen from a polymer material, AlN or silicon.

[0020] According to one embodiment, the waveguide is made of silicon, or silicon nitride, or a hybrid form of silicon nitride and silicon.

[0021] According to one embodiment, the photonic device also comprises a second means configured to dissipate heat capable of being emitted by the laser source to the support, the second means comprising a second via extending from the waveguide in the direction of the main surface.

[0022] According to one embodiment, the second means also comprises a substantially planar metal insert interposed between the second via and the main surface, the second means further comprising a second terminal via extending from the metal insert to the main surface, an additional insert being advantageously interposed between the main surface and the second terminal via.

[0023] According to one embodiment, the photonic device also comprises a third means configured to dissipate heat that may be emitted by the laser source, the third means comprising a third via extending from the first pad and the second pad, respectively, in the direction of the main surface.

[0024] According to one embodiment, the third means also comprises two metal inserts of generally planar shape, referred to as a first insert and a second insert, respectively, the first insert being inserted between the main surface and a third via extending from the first pad and the second insert being inserted between the main surface and a third via extending from the second pad, the third means further comprising at least a third terminal via extending from the first insert to the main surface and at least another third terminal via extending from the second insert to the main surface.

[0025] According to one embodiment, the support surface is assembled to a surface of the support layer opposite the main surface of said support layer, referred to as the minor surface.

[0026] According to one embodiment, the overlap by the heat transfer layer of one of the first and second surfaces is partial, leaving free access to a first section and a second section of the first surface and the second surface, respectively, a first wire directly connects the first terminal and the first pad, a second wire directly connects the second terminal and the second pad, and the first terminal and the second terminal are arranged on a supporting substrate.

[0027] According to one embodiment, the heat transfer layer comprises two secondary metal pads, referred to respectively as a first secondary pad and a second secondary pad, accessible by a contact surface of the heat transfer layer opposite the top surface, a first metal ball connecting the first secondary pad to the first pad and a second metal ball connecting the second secondary pad to the second pad, the first terminal and the second terminal being arranged on the contact surface, the first terminal and the first secondary pad being connected via a first rewiring and the second terminal and the second secondary pad being connected via a second rewiring.

[0028] According to one embodiment, the support surface is assembled to the photonic layer by its upper side by metal balls that also ensure an electrical connection between the first and second pads and the first and second terminals, respectively, and the support substrate comprises a through opening penetrating the support substrate of the support surface towards the face of the support substrate opposite the support surface, said through opening being configured to allow positioning of the first means.

[0029] According to one embodiment, the photonic device comprises coupling means configured to inject the laser radiation emitted by a laser source into an optical fiber or network of optical fibers.

[0030] According to one embodiment, the coupling means are configured to allow coupling by an edge, referred to as the coupling edge, of the device perpendicular to the main surface, and advantageously the coupling means comprise a lens associated with the coupling edge.

[0031] According to one embodiment, the coupling means comprises a diffraction grating arranged in the photonic layer and configured to enable optical coupling between a top surface of the laser radiation emitted by the laser source and an optical fiber or a network of optical fibers. [Brief description of the drawings]

[0032] Other features and advantages of the present invention will become apparent from the following detailed description of the invention which refers to the accompanying drawings.

[0033] [Figure 1] 1 is a schematic diagram of a photonic device provided with a light source made of III-V semiconductor material as known from the prior art; [Figure 2A] 1 is a schematic diagram of a photonic device according to a first embodiment of the invention, where only a first means is shown, the photonic device being shown in particular along a cut plane perpendicular to a main surface. [Figure 2B] 1 is a schematic diagram of a photonic device according to a first embodiment of the present invention, in which a first, second and third means are represented, the photonic device being shown in particular along a cut plane perpendicular to a main surface. [Diagram 3] FIG. 3 is a schematic diagram of an example of a photonic device according to the embodiment shown in FIG. 1; FIG. 3 has been particularly simplified for clarity, and in particular in this example the photonic layer is formed by a stack of a first layer, a second layer and a third layer, and the photonic device is particularly represented along a cut plane perpendicular to the main surface. [Figure 4] FIG. 2 is a schematic diagram of a photonic stack that can be implemented in a photonic device according to the present invention; for clarity, the photonic stack is separated from the photonic device and shown along a cut plane perpendicular to its main surface. [Diagram 5] FIG. 1 is a schematic diagram of a waveguide that can be implemented in a photonic device according to the present invention; for clarity, the waveguide is separated from the photonic device and shown along a cut perpendicular to its main surface. [Figure 6] FIG. 2 is a simplified schematic diagram of the device of FIG. 1 showing in detail the arrangement of the second means; [Figure 7] FIG. 2 is a simplified schematic diagram of the device of FIG. 1 detailing the placement of the third means. [Figure 8] 1 is a simplified schematic diagram of a photonic device provided with coupling means according to a second example, the photonic device being shown in particular along a cut plane perpendicular to its main surface; [Figure 9] FIG. 1 is a simplified diagram of a photonic device provided with a coupling means according to a first example, the photonic device being shown in particular along a cut plane perpendicular to its main surface; [Figure 10] FIG. 2 shows a front view of a photonic device comprising a plurality of laser sources and a first means common to all the laser sources; [Figure 11] FIG. 2 shows a photonic device according to the invention, comprising a control chip. [Figure 12] FIG. 2 is a schematic diagram of a photonic device according to a second embodiment of the present invention, the photonic device being shown in particular along a cut plane perpendicular to a main surface. [Figure 13] FIG. 5 is a schematic diagram of a photonic device according to a third embodiment of the present invention, the photonic device being shown in particular along a cut plane perpendicular to a main surface. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] The present invention relates to a photonic device, and more particularly to a photonic device comprising a photonic chip provided with a heterogeneous laser source and heat dissipation means configured to dissipate heat likely to be emitted by the laser source.

[0035] More specifically, the present invention relates to a photonic device comprising a photonic chip and a supporting substrate, the photonic chip comprising a supporting layer and a photonic layer, in particular the photonic layer being mounted by its lower surface on a main surface of the supporting layer, the photonic layer further comprising at least one dielectric material encapsulating a laser source formed by a waveguide and a photonic stack optically coupled to each other.

[0036] The photonic chip also includes a first pad and a second pad having a first surface and a second surface, respectively, accessible by a top surface of the photonic layer opposite the underlying layer, In this regard, the first pad and the second pad are electrically connected to the photonic stack by connecting vias extending into the photonic layer.

[0037] Additionally, the heat dissipation means comprises a first means configured to dissipate heat that may be emitted by the laser source.

[0038] More specifically, the first means comprises a heat transfer layer and a heat transfer element in exclusive contact with the heat transfer layer, the heat transfer layer in particular comprising an electrically insulating material partially overlapping at least one of the first and second surfaces while leaving free access to the first and second sections of the first and second surfaces, respectively.

[0039] This particular arrangement of the heat transfer layer therefore makes it possible to electrically connect, by means of connection means, the first and second sections with metal tracks of a support substrate, on the support surface of said substrate.

[0040] The heat dissipation means may also comprise second and third means configured to dissipate heat that may be emitted by the laser source.

[0041] The second and third means respectively comprise second and third vias extending from one and / or the other of the first and second pads, respectively, from the waveguide in a direction towards the major surface.

[0042] In Fig. 2A one can see a coupling device 100 according to an embodiment of the invention. The photonic device 100 comprises a photonic chip 101, which comprises, from the rear face 100B towards the front face 100A, a support layer 200 and a photonic layer 300. The photonic device 100 also comprises a support substrate 210 provided with two parallel faces, called respectively support face 210A and free face 210B. More specifically, the support substrate 210 comprises, on its support face 210A, a first terminal 211 and a second terminal 212. More specifically, the first terminal 211 and the second terminal 212 are configured to allow interfacing with the control and / or control means of the photonic device 100. In this respect, the first terminal 211 and the second terminal 212 accessible by the support faces extend according to the thickness of the support substrate 210 by means of first vias 211A and second vias 212A, respectively. The first via 211A and the second via 212B are arranged to allow an electrical connection through the free surface 210B. For example, the pad 211B and the pad 212B can be arranged on the free surface 210B in the extension of the first via 211B and the second via 212B, respectively.

[0043] The support layer 200 includes two parallel surfaces, a primary surface 200A and a secondary surface 200B, respectively, and the photonic layer 300 also includes two parallel surfaces to the primary surface 200A, the so-called lower surface 300A and upper surface 300B, respectively. In this regard, as shown in Fig. 2A, the photonic layer 300 rests by its lower surface 300A on the primary surface 200A, and the support layer rests by its secondary surface 200B on the support surface 210A.

[0044] The support layer 200 can include a semiconductor material, more specifically a monocrystalline semiconductor material. In this respect, the support layer 200 can advantageously include monocrystalline silicon. This material is known to be compatible with the manufacturing lines of microelectronic and / or photonic components and has a high heat dissipation coefficient, the advantages of which are mentioned under the disclosure of the present invention.

[0045] The photonic layer 300 includes at least one layer of a dielectric material that encapsulates the waveguide 400 and the photonic stack 500. More specifically, the photonic stack 500 includes multiple layers of semiconductor material 111-V and is optically coupled to the waveguide 400 to form therewith a heterogeneous laser source. More specifically, the photonic stack 500 can include multiple layers of III-V semiconductor material structured into a second waveguide that is optically coupled to the waveguide 400.

[0046] In other words, the laser radiation that can be emitted by the photonic stack 500 is coupled into the waveguide 400 and guided by the waveguide 400 .

[0047] Thus, as an example, as shown in FIG. 4 (FIG. 4 depicts the photonic stack separated from the remainder of the photonic device), the photonic stack 500 can include, from the front face 100A to the back face 100B, an upper layer 501, one or more quantum well layers 502, and a lower layer 503. In particular, the upper layer 501 can include a P-doped III-V semiconductor material, and the lower layer 503 can include an N-doped III-V semiconductor material. More specifically, the upper layer 501 and the lower layer 503 can include P-doped InP and N-doped InP, respectively. The quantum well layer 502 can include one or more III-V semiconductor materials, such as an InP-based material.

[0048] Moreover, the photonic stack 500 is advantageously placed in line with the waveguide 400. With regard to the waveguide 400, as shown in FIG. 5 (which represents the waveguide separated from the rest of the photonic device), it may comprise a central rib 401 and a base 402 resting on said central rib 401 so as to have a T-shaped profile along a cut perpendicular to the first face. The purpose of this latter embodiment is not to limit the scope of the invention to this geometric shape only, and a person skilled in the art will be able to design waveguides with different profiles. For example, guides with square or rectangular cross sections are also considered.

[0049] It should also be understood that the material forming the waveguide 400 has a refractive index greater than the refractive index of the dielectric material forming the photonic layer 300 .

[0050] The photonic chip 101 also comprises two contact pads, referred to as a first pad 601 and a second pad 602. More specifically, the first pad 601 and the second pad 602 have a first surface 601A and a second surface 602A, respectively, accessible by the top surface 300B of the photonic layer 300. In particular, the first pad 601 and the second pad 602 are electrically connected to the photonic stack 500 by connection vias 603, 604 extending into the photonic layer 300.

[0051] As an example, the contact pads may comprise aluminum and may have a thickness on the order of 3 μm.

[0052] The term "accessible by the top surface" is understood to mean a contact pad having surfaces (first and second surfaces) that are flush or protruding relative to the top surface. It should also be understood that it is not necessary to specify that the first and second surfaces are parallel, or at least substantially parallel, to the major surface 200A. As a result, the first and second surfaces are parallel to each other.

[0053] The first pad 601 can be connected to the upper layer 501 of the photonic stack 500 by a connecting via referred to as the first via 603, and the second pad 602 can be connected to the lower layer 503 of the photonic stack 500 by another connecting via referred to as the second contact via 604.

[0054] It is understood that the contact pads 601, 602 and the connection vias 603, 604 comprise a conductive material, more specifically a metal, such as aluminum and / or copper.

[0055] The contact pads 601, 602 and connecting vias 603, 604, as described above, allow current to circulate within the photonic stack 500, thereby enabling emission of laser radiation by the photonic stack 500. The emitted laser radiation is then coupled and subsequently guided by the waveguide 400.

[0056] It is known that the laser source formed by the waveguide 400 and the photonic stack 500 has a high probability of heating up during operation, which can alter the operation of the laser source and ultimately degrade its performance.

[0057] Therefore, the present invention also implements a first heat dissipation means 700 configured to dissipate heat that may be emitted by the laser source (FIG. 2A).

[0058] Advantageously, the present invention may also implement second means 720 and third heat dissipation means 740 configured to dissipate heat that may be emitted by the laser source (FIG. 2B).

[0059] In this regard, the first means 700 comprises a heat transfer layer 701 and a heat transfer element 702 .

[0060] According to this first embodiment, the heat transfer layer 701 comprises an electrically insulating material that partially overlaps at least one of the first surface 601A and the second surface 602A, leaving free access from the first surface 601A and the second surface 602A to the first section 601B and the second section 602B, respectively.

[0061] It is therefore understood that when the heat transfer layer 701 is in contact with a contact pad, it overlaps the first and / or second surface of the pad under consideration, this covering being only partial so as to allow contact to be made in the first section 601B and the second section 602B, for example by a welding wire.

[0062] In particular, photonic device 100 also includes respective connecting wires, a first wire 605 and a second wire 606. More specifically, first wire 605 directly connects first section 601B with first terminal 211, and second wire 606 directly connects second section 602B with second terminal 212.

[0063] Advantageously, the heat transfer layer is made of a material, referred to as heat transfer material, having a thermal conductivity of more than 20 W / m / K, for example a heat transfer of a thickness of 150 μm with a thermal conductivity equal to 130 W / m / K can be considered.

[0064] In particular, the heat transfer material may include a dielectric material sold under the reference Thermal Tape by the company T-global™.

[0065] The selection of heat transfer materials is accessible to one skilled in the art.

[0066] The heat transfer material is also 12 It has an electrical resistivity greater than ohm·cm.

[0067] By way of example, the thickness of the heat transfer layer may be 0.15 μm, however, a person skilled in the art will be able to adjust the thickness of the heat transfer layer as a function of the resistivity of the material under consideration.

[0068] The heat transfer element 702 is advantageously in contact exclusively with the heat transfer layer 701. In other words, the heat transfer element 702 is electrically insulated from both the first pad 601 and the second pad 602.

[0069] The heat transfer element may comprise at least one of the elements selected from a metal plate, a thermoelectric cooling plate, an air-cooled radiator, a plate provided with cooling ducts (e.g. ducts allowing the circulation of a fluid, in particular water).

[0070] However, the invention is not limited to only these elements, and one skilled in the art may implement any other type of cooling element that may be suitable.

[0071] Advantageously, the heat transfer element 702 can be configured to be thermalizable.

[0072] The term "thermalizable" is understood to mean a heat transfer element to which a given temperature can be imposed.

[0073] 3, the photonic layer 300 includes, from the primary surface 200A, a first layer 301, a second layer 302, and a third layer 303. More specifically, according to this example, the waveguide 400 is disposed in the first layer and is flush with an interface formed between the first layer 301 and the second layer 302, referred to as a first interface 301A, and the photonic stack 500 is disposed in the third layer 303 and is flush with an interface formed between the second layer 302 and the third layer 303, referred to as a second interface 303A.

[0074] It should also be noted that the second layer 302 is optional.

[0075] Thus, as soon as the laser source is in operation, the heat it emits is dissipated through the connection vias 603, 604 and the contact pads to the first heat dissipation means 700, in particular to the heat sink 702. By considering a heat transfer layer made of an electrically insulating material, it is possible to consider the heat dissipation in cooperation with both the first pad and the second pad.

[0076] Thus, the first means considered in the present invention makes it possible to limit the heating of the laser source while it is in operation. More specifically, during the implementation of only the first means, the inventors were able to observe a temperature difference between the laser source and the heat sink of less than 10° C., whereas without the implementation of the first means, a temperature difference between the support substrate 200 and the laser source of 20° C. to 30° C. would be observed. The limitation and / or control of the heating of the laser source according to the principles of the present invention makes it possible to improve the stability of said laser source.

[0077] As shown in FIG. 2B, the photonic device 100 may also comprise a second means 720 configured to dissipate heat that may be emitted by the laser source to the support layer 200.

[0078] The second means 720 comprises a second via 721 extending from the waveguide 400 to the main surface 200A. More specifically, the second via 721 extends into the first layer 301, if considered (FIG. 6).

[0079] Complementarily, the second means 721 may also include a metal insert 722 having a generally planar shape and interposed between the second via 721 and the major surface 200A. The second means 720 may also include a second terminal via 723 extending from the metal insert 722 toward the major surface 200A.

[0080] It is understood that all of the elements forming the second heat dissipation means may comprise a conductive material, in particular a metal, for example copper. It is understood that it is not necessary to specify that the second via, the metal insert, and the second terminal via are connected to each other.

[0081] Thus, when heat is emitted by the laser source, it is dissipated by the first means 700 and the second means 720. In this respect, the second means 720 allows to dissipate the heat in the support layer 200. The implementation of the first means and the second means allows to observe a temperature difference between the laser source and the heat sink of less than 8°C. The implementation of only the second means allows to observe a temperature difference between the substrate 200 and the laser source of 13°C to 17°C.

[0082] 2B, the photonic device 100 also comprises a second means 740 configured to dissipate heat that may be emitted by the laser source to the support layer 200. The third means 740 comprises third vias 741, 742 extending from the first pad 601 and the second pad 602, respectively, towards the main surface 200A (FIG. 7).

[0083] The third means 740 also comprises two metal inserts of generally planar shape, referred to as a first insert 743 and a second insert 744. The first insert 743 is in contact with a third via 741 extending from the first pad 601 and is interposed between the main surface 200A and the third via 741. The second insert 744 is in contact with a third via 742 extending from the second pad 602 and is interposed between the main surface 200A and the third via 742.

[0084] Advantageously, the metal insert 722, the first insert 743 and the second insert 744 are formed from a single metal level, in other words the distance separating the inserts from the main surface is the same for each of the inserts.

[0085] The third means 740 may further include one or more third terminal vias 745 extending from the first insert 743 to the major surface 200A and one or more other terminal vias 746 extending from the second insert 744 toward the major surface 200A.

[0086] It will be appreciated that all of the elements forming the third means 740 may comprise an electrically conductive material, in particular a metal, such as copper.

[0087] These third means 740 in combination with the first and second means make it possible to observe a temperature difference between the laser source and the heat sink of less than 7°C.

[0088] The photonic device 100 may also comprise coupling means configured to inject the laser radiation emitted by the laser source into an optical fiber or an array of optical fibers.

[0089] According to a first example, the coupling means are configured to allow coupling by an edge, called coupling edge 200C, of ​​the device perpendicular to the main face 200A. This is illustrated in figure 8. Advantageously, the coupling means comprise a waveguide 804 and a lens 800 associated to the coupling edge face 200C. These coupling means thus allow coupling the optical radiation emitted by the laser source into an external device, for example an optical fiber array 801.

[0090] According to a second example, the coupling means comprise a diffraction grating 803 arranged in the photonic layer and configured to allow optical coupling of the front face of the laser radiation emitted by the laser source with an optical fiber or a network of optical fibers, as illustrated in FIG.

[0091] Of course, the present invention is not limited to a single laser source. In this regard, those skilled in the art can consider a photonic device 100 comprising a plurality of photonic chips 101 and a heat transfer layer in contact with the first pad 601 and the second pad 602, as shown in FIG. 10. This configuration allows the bonding wafer of each of the photonic chips 101 to be coplanar. Furthermore, the first terminal 211 and the second terminal 212 arranged on the support surface 210A are on opposite sides of the surface of the photonic chip opposite the bonding edge surface 200C.

[0092] As shown in Fig. 11, the photonic device 100 may also comprise a control chip 420 and a modulator 450 (the latter in particular comprising a waveguide encapsulated in the photonic layer). The control chip 420 is in particular mounted on two connector pads 421 and 422 accessible by the front face 100A. Metal balls 423, 424 may be interposed between the connector pads and the front face. The photonic device 100 may include an auxiliary heat dissipation layer 703 that thermally couples the driving chip and the heat sink 702. The auxiliary heat dissipation layer 703 is formed of the same material as the heat dissipation layer 701.

[0093] The photonic device 100 also comprises other heat dissipation means 430 and 440 having essentially the same characteristics as the second and third dissipation means for dissipating heat that may be generated in the control chip 420 and the modulator 450.

[0094] In FIG. 12 there can be seen a photonic device 100 according to a second embodiment of the invention, essentially incorporating elements associated with the first embodiment.

[0095] According to this second embodiment, the support surface is assembled by its upper side to the photonic layer by metal balls 607, 608, which also ensure the electrical connection of the first pads 601 and the second pads 602 with the first terminals 211 and the second terminals 212. According to this second embodiment, the support substrate 210 comprises through-openings 213 passing through the support substrate from the support surface to the free surface, said through-openings being configured to allow the positioning of the first means 700.

[0096] The photonic device 100 according to this second embodiment may also comprise an additional substrate 220 on which the minor face 200B of the support layer 200 is assembled, a lens 800 and a network of optical fibres 801.

[0097] In FIG. 13 there can be seen a photonic device 100 according to a third embodiment of the invention essentially incorporating elements associated with the first embodiment.

[0098] According to this third embodiment, the heat transfer layer 701 comprises two secondary metal pads, referred to respectively as a first secondary pad 703 and a second secondary pad 704, accessible by a contact surface 701A of the heat transfer layer 701 opposite the upper surface 300B.

[0099] A first metal ball 705 , for example made of AuSn, connects the first secondary pad 703 to the first pad 601 , and a second metal ball 706 connects the second secondary pad 704 to the second pad 602 .

[0100] The first terminal 211 and the second terminal 212 (not shown in FIG. 13 for clarity) are electrically linked to the first secondary pad 703 and the second secondary pad 704, respectively, via rewiring.

[0101] According to this third embodiment, the heat transfer layer 701 advantageously comprises silicon or AlN, these two materials being particularly suitable for the formation of connection means, redistribution lines.

[0102] The invention therefore proposes an effective solution for dissipating the heat that may be emitted by the laser during operation, thus ensuring stability.In particular, the invention proposes implementing first means making it possible to dissipate the heat likely to be generated by the laser source, cooperating with the means for connecting said laser source.

[0103] Methods for fabricating photonic devices can include fabrication steps well known in the art of microelectronics.

[0104] Naturally, the invention is not limited to the described embodiments, and variants can be added thereto without departing from the scope of the invention as defined by the claims.

Claims

1. A photonic device (100) comprising a photonic chip (101) and a support substrate (210), the support substrate (210) being provided with a support surface (210A), the photonic chip (101) comprising a support layer (200) and a photonic layer (300) resting with its surface, referred to as the lower surface (300A), on the main surface (200A) of the support layer (200), the photonic layer (300) comprising at least one dielectric material encapsulating at least one laser source formed by a waveguide (400) and a photonic stack (500) optically coupled to each other, the photonic stack being made of III-V semiconductor materials, the photonic chip (101) comprising a support layer (200) and a photonic layer (300) resting with its surface, referred to as the lower surface (300A), the photonic layer (300) comprising at least one dielectric material encapsulating at least one laser source formed by a waveguide (400) and a photonic stack (500) optically coupled to each other, the photonic stack being made of III-V semiconductor materials, the photonic chip (101) comprising at least one dielectric material and a photonic layer (300) optically coupled to each other, the photonic layer (300) being formed of at least one dielectric material, the photonic layer (300) being formed of at least one dielectric material, the photonic layer (300) being optically coupled to each other ... The tonic chip also comprises a first metal pad (601) and a second metal pad (602) having a first surface (601A) and a second surface (602A), respectively, accessible by a top surface (300B) of the photonic layer (300) opposite the bottom surface (300A) and electrically connected to the photonic stack (500) by connection vias (603, 604) extending into the photonic layer (300), the first metal pad (601) and the second metal pad (602) being configured to enable the circulation of an electric current in the photonic stack (500) to control the emission of laser radiation by the laser source, the photonic device comprising: - a first heat dissipation means (700) configured to dissipate heat capable of being emitted by said laser source, said first heat dissipation means (700) comprising a heat transfer layer (701) and a heat transfer element (702) in thermal contact with said heat transfer layer (701), said heat transfer layer (701) comprising an electrically insulating material at least partially overlapping at least one of said first surface (601A) and second surface (602A); - connecting means configured to electrically connect the first metal pad (601) and the second metal pad (602) with a first terminal (211) and a second terminal (212) arranged on either the supporting substrate (210) or the heat transfer layer (701).

2. The photonic device (100) of claim 1, wherein the heat transfer layer (701) is in contact with the first metal pad (601) and the second metal pad (602).

3. The photonic device (100) of claim 1 or 2, wherein the heat transfer layer (701) is made of a material, referred to as a heat transfer material, having a thermal conductivity of 20 W / m / K or more, the heat transfer layer (701) including at least one of the materials selected from a polymer material, AlN or silicon.

4. The photonic device (100) of claim 1 or 2, wherein said waveguide (400) is made of silicon, or silicon nitride, or a hybrid form of silicon nitride and silicon.

5. The photonic device (100) of claim 1 or 2, further comprising a second means (720) configured to dissipate heat capable of being emitted by the laser source to the support layer (200), the second means (720) comprising a second via (721) extending from the waveguide (400) in the direction of the main surface (200A).

6. The photonic device (100) of claim 5, wherein the second means (720) also comprises a planar metal insert (722) interposed between the second via (721) and the main surface (200A), and the second means further comprises a second terminal via (723) extending from the metal insert (722) toward the main surface (200A).

7. The photonic device (100) of claim 1 or 2, further comprising a third means (740) configured to dissipate heat likely to be emitted by the laser source, the third means (740) comprising third vias (741, 742) extending from the first metal pad (601) and the second metal pad (602), respectively, in the direction of the main surface (200A).

8. 8. The photonic device of claim 7, wherein the third means (740) also comprises two metal inserts, a first insert (743) and a second insert (744) of planar shape, the first insert (743) being interposed between the main surface (200A) and the third via (741) extending from the first metal pad (601), and the second insert (744) being interposed between the main surface (200A) and the third via (742) extending from the second metal pad (602), the third means (740) further comprising at least a third terminal via (745) extending from the first insert (743) to the main surface (200A) and at least another third terminal via (746) extending from the second insert (744) to the main surface (200A).

9. 3. The photonic device (100) of claim 1 or 2, wherein the support surface (210A) is assembled to a surface of the support layer (200) opposite the main surface (200A) of the support layer, referred to as the secondary surface (200B).

10. 10. The photonic device (100) of claim 9, wherein the coverage of one of the first surface (601A) and the second surface (602A) by the heat transfer layer (701) is partial, leaving free access to a first section (601B) and a second section (602B) of the first surface (601A) and the second surface (602A), respectively; a first wire (605) directly connects the first terminal (211) and the first metal pad (601); a second wire (606) directly connects the second terminal (212) and the second metal pad (602); and the first terminal (211) and the second terminal (212) are disposed on the supporting substrate (210).

11. The heat transfer layer (701) comprises two secondary metal pads, designated respectively as a first secondary pad (703) and a second secondary pad (704), accessible by a contact surface (701A) of the heat transfer layer (701) opposite the top surface (300B), a first metal ball (705) connecting the first secondary pad (703) to the first metal pad (601), and a second metal ball (706) connecting the second secondary pad (704) to the second metal pad (601).

10. The photonic device of claim 9, further comprising: a first metal ball (706) connecting the first terminal (211) and the second terminal (212) to the first secondary pad (703), the first terminal (211) and the first secondary pad (703) being disposed on the contact surface (701A), the first terminal (211) and the first secondary pad (703) being connected via a first rewiring, and the second terminal (212) and the second secondary pad (704) being connected via a second rewiring.

12. 3. The photonic device (100) of claim 1 or 2, wherein the support surface is assembled to the photonic layer by its top side by metal balls (607, 608) that also ensure an electrical connection between the first and second metal pads and the first and second terminals, respectively, and the support substrate comprises a through opening (213) penetrating the support substrate of the support surface towards a side of the support substrate opposite the support surface, the through opening being configured to allow positioning of the first heat dissipation means.

13. 3. The photonic device (100) according to claim 1 or 2, comprising coupling means configured to inject the laser radiation emitted by the laser source into an optical fiber or a network of optical fibers.

14. The photonic device (100) of claim 13, wherein the coupling means is configured to allow coupling through an edge, referred to as a coupling edge (200C), of the photonic device perpendicular to the main surface (200A), the coupling means comprising a lens (800) associated with the coupling edge.

15. 14. The photonic device (100) of claim 13, wherein the coupling means comprises a diffraction grating (803) arranged in the photonic layer (300) and configured to enable optical coupling of the laser radiation emitted by the laser source with the top surface and an optical fiber or a network of optical fibers.

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